JP4908746B2 - Multilayer structure, piezoelectric actuator, and manufacturing method thereof - Google Patents

Description

  The present invention relates to a laminated structure provided with a counter electrode used for a piezoelectric pump, a piezoelectric actuator, an ultrasonic transducer and the like, and a method for manufacturing the same.

  A laminated structure in which a dielectric material such as a piezoelectric material and an electrode are laminated is used for various applications such as a capacitor, a piezoelectric pump, a piezoelectric actuator, and an ultrasonic transducer. As such a laminated structure, not only a single layer structure in which electrodes are formed on both sides of a dielectric, but also a multilayer structure in which a plurality of dielectrics and a plurality of electrodes are alternately formed is used. It has been. By connecting a plurality of stacked layers in parallel, even if the size is small, the capacitance between the electrodes can be increased as a whole of the stacked structure, so that an increase in electrical impedance can be suppressed. In recent years, along with the development of MEMS (microelectromechanical system) related devices, the miniaturization and integration of such a laminated structure has been further advanced.

  Incidentally, in order to efficiently apply a voltage to the dielectric, it is important that the dielectric and the electrode are in close contact. In the case of producing an element using a piezoelectric material as a dielectric, platinum (Pt) having a low reactivity with the piezoelectric material is generally used as an electrode material. However, platinum has low adhesion to piezoelectric materials and substrates. Therefore, a titanium (Ti) layer is further provided in order to bring platinum and the lower layer material into close contact, and the electrode is made to have a double structure.

  However, since the piezoelectric material is generally baked during the manufacturing process of the element, the adhesion layer such as titanium is oxidized by oxygen that permeates platinum. As a result, the bond between the piezoelectric material and the adhesion layer becomes weak, and the electrode is peeled off from the piezoelectric material. In addition, the electrode may be peeled off from the piezoelectric material due to a difference in thermal expansion coefficient between the piezoelectric material and the electrode material.

  Patent Document 1 discloses an electrode film in a laminated structure electrode in which a piezoelectric film is formed by a gas deposition method on a Si substrate on which an electrode film is disposed in order to prevent peeling at the piezoelectric film / electrode interface. Is a laminated structure electrode characterized in that it is composed of one or more and the film thickness is greater than 0.15 μm. In Patent Document 1, an electrode in which three kinds of metals of platinum, iridium (Ir), and tantalum (Ta) are stacked is used as the lower electrode of the piezoelectric film. That is, by inserting an iridium layer that does not easily transmit oxygen between the platinum layer and the tantalum layer as an adhesion layer between the lower layer substrate, oxygen that has passed through the platinum layer is prevented from entering the tantalum layer. It is out.

The electrode having such a structure is effective when used as a lower electrode of a structure having a single piezoelectric material layer. However, when an electrode having such a structure is used as an internal electrode of a laminated structure in which a plurality of piezoelectric material layers are laminated, not only the piezoelectric material in the upper layer of the electrode but also the piezoelectric material in the lower layer of the electrode Since oxygen also enters from the bottom, the electrode peels off.
JP 2001-156351 A (first page, FIG. 1)

  Therefore, in view of the above points, an object of the present invention is to provide a laminated structure in which an electrode is hardly peeled off, a piezoelectric actuator including such a laminated structure, and a method for manufacturing the same.

In order to solve the above-described problem, a multilayer structure according to one aspect of the present invention includes at least one intermediate electrode and a plurality of dielectric layers stacked via at least one intermediate electrode. It said at least one intermediate electrode comprises an adhesion layer formed on the dielectric layer, a dielectric layer a conductive layer formed on the via contact layer, adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, a conductive layer, platinum, ruthenium, iridium, rhenium, osmium, and at least one material of the rhodium, or its oxide It consists of things.

The piezoelectric actuator according to the present invention includes a plurality of piezoelectric layers, a first intermediate electrode, and a second intermediate electrode, and the plurality of piezoelectric layers, the first intermediate electrode, and the second intermediate electrode. A laminated structure in which a piezoelectric layer, a first intermediate electrode, a piezoelectric layer, and a second intermediate electrode are laminated in this order, and a first side surface disposed in a first side region of the laminated structure comprising an electrode, a second side electrode disposed on a different second side regions and the first side surface area of the product layer structure, each of the first and second intermediate electrodes, the piezoelectric layer An adhesive layer formed on the conductive layer formed on the piezoelectric layer via the adhesive layer, the first intermediate electrode is connected to the first side electrode, and the second Insulated from the side electrode, the second intermediate electrode is connected to the second side electrode and insulated from the first side electrode And, the adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, a conductive layer, platinum, ruthenium, iridium, rhenium, osmium, and And at least one material of rhodium or an oxide thereof.

The manufacturing method of the laminated structure according to the first aspect of the present invention includes a step (a) of disposing a first electrode by forming a conductive layer on a support substrate via an adhesion layer, and a dielectric. (B) disposing a dielectric layer on the first electrode by depositing powder of the material on the first electrode, and forming a conductive layer on the dielectric layer via an adhesion layer A step (c) of disposing a second electrode, and a step of disposing a dielectric layer on the second electrode by spraying and depositing a powder of a dielectric material on the second electrode ( d), heat-treating these dielectric layers (e), and before or after step (e), forming a third electrode on the dielectric layer disposed in step (d) (f) ); and a, adhesion layer, aluminum, Ha Funiumu, Banaji Arm, magnesium, niobium, and an oxide of at least one material of the tantalum, a conductive layer, platinum, ruthenium, iridium, rhenium, osmium, and at least one material of the rhodium, or It consists of the oxide.

The method for manufacturing a laminated structure according to the second aspect of the present invention includes a step (a) of disposing a dielectric layer by spraying and depositing a powder of a dielectric material on a support substrate, and a step on the dielectric layer. In addition, the step (b) of disposing the first electrode by forming a conductive layer through the adhesion layer, and spraying and depositing the powder of the dielectric material on the first electrode, A step (c) of disposing a dielectric layer on the electrode; a step (d) of heat-treating these dielectric layers; and on the dielectric layer disposed in step (c) before or after step (d). in step (e) forming a second electrode, comprising a step (f) of removing the supporting substrate from the dielectric layer disposed in the step (a), the adhesion layer, aluminum, Ha Funiumu, vanadium , magnesium, niobium, 及 , An oxide of at least one material of the tantalum, a conductive layer, platinum, ruthenium, iridium, rhenium, osmium, and at least one material of the rhodium, or its oxide.

The method for manufacturing a piezoelectric actuator having a laminated structure according to the present invention includes a step (a) of disposing a piezoelectric layer by spraying a powder of a piezoelectric material onto a support substrate and depositing the piezoelectric material layer, Forming a conductive layer through the layer, placing the first intermediate electrode in step (b), and spraying and depositing a powder of piezoelectric material on the first intermediate electrode; A step (c) of disposing a piezoelectric layer thereon, a step (d) of disposing a second intermediate electrode by forming a conductive layer on the piezoelectric layer via an adhesion layer; A step (e) of disposing a piezoelectric layer on the second intermediate electrode by spraying and depositing powder onto the second intermediate electrode; a step (f) of heat-treating these piezoelectric layers; Pressure arranged in (a) And removing the supporting substrate from the body layer (g), comprising the steps (h) forming at least first and second side electrodes on the side surfaces of the product layer structure, the adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, a conductive layer, platinum, ruthenium, iridium, rhenium, osmium, and at least one material of the rhodium, or It consists of the oxide.

According to the present invention, on the dielectrics layer or the piezoelectric layer, since a conductive layer is formed via an adhesive layer made of predetermined metal oxides, in the heat treatment process of the laminated structure, a dielectric layer or a piezoelectric Even if oxygen is generated from the body layer or stress is generated due to a difference in thermal expansion coefficient, it is possible to prevent the intermediate electrode constituted by the adhesion layer and the conductive layer from being peeled off from the lower layer . What slave, by using such a laminated structure, it is possible to improve the manufacturing yield of the piezoelectric actuator.

Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. The same constituent elements are denoted by the same reference numerals, and the description thereof is omitted.
FIG. 1 is a cross-sectional view showing a laminated structure according to the first embodiment of the present invention.

As shown in FIG. 1, the laminated structure 1 is a minute columnar structure having, for example, a side of the bottom surface of about 0.2 mm to 1.0 mm and a height of about 1.0 mm. The laminated structure 1 includes a substrate 10, a lower electrode including the adhesion layer 11 and the conductive layer 12, a dielectric layer 13, and an upper electrode including the adhesion layer 14 and the conductive layer 15.
In the laminated structure according to this embodiment, PZT (Pb (lead) zirconate titanate), which is a piezoelectric material, is used as the dielectric layer 13. When a voltage is applied to the PZT layer via an electrode, the PZT layer expands and contracts due to the piezoelectric effect. Such a laminated structure is used for a piezoelectric pump, a piezoelectric actuator, an ultrasonic transducer that transmits and receives ultrasonic waves in an ultrasonic probe, and the like.

The substrate 10 is for supporting a structure layered on top. The substrate 10 is formed of, for example, silicon (Si), and an insulating film (SiO ₂ ) is formed on the upper surface of the substrate 10 in order to electrically insulate a layer formed on the upper portion.

  In the lower electrode, the conductive layer 12 is used to apply a voltage to the dielectric layer 13. The conductive layer 12 may be a metal material such as platinum (Pt), ruthenium (Ru), iridium (Ir), rhenium (Re), osmium (Os), rhodium (Rh), or at least one of these metals. A metal oxide containing can be used. In this embodiment, platinum is used.

  The conductive layer 12 has a thickness of about 300 nm. The reason is as follows. In the present embodiment, the dielectric layer 13 is formed on the conductive layer 12 using a spray deposition method in which a film is formed by spraying and depositing material powder on the lower layer at a high speed. The jet deposition method is also called an aerosol deposition method or a gas deposition method, and is hereinafter referred to as an “AD (aerosol deposition) method”. In this AD method, a phenomenon (called “anchoring”) occurs in which the powder of the material to be deposited bites into the lower electrode layer. The thickness of the anchor layer (powder layer) generated by this anchoring varies depending on the material of the lower layer (electrode layer), the speed of the powder, etc., but is usually about 10 nm to 300 nm. Therefore, it is desirable that the thickness of the conductive layer is 300 nm or more in order to cause sufficient anchoring to bring the conductive layer and the dielectric layer into close contact with each other and to function well as the conductive layer. The AD method will be described in detail later.

  The adhesion layer 11 is an intermediate layer disposed between the two in order to bring the conductive layer 12 into close contact with the substrate 10. Here, since the conductive layer 12 is formed using sputtering, vacuum deposition, or the like, the adhesiveness with the lower layer is relatively low. Therefore, in the present embodiment, in order to bring the conductive layer 12 and the substrate 10 into close contact with each other, the close contact layer 11 having a thickness of about 20 nm to 100 nm, more preferably 20 nm to 50 nm is provided therebetween.

In general, as the adhesion layer, a material having high adhesion between the conductive layer and the substrate, such as titanium (Ti), is used. However, since the dielectric layer (PZT layer) is heat-treated in the manufacturing process of the laminated structure, oxygen passes through the conductive layer and enters the adhesion layer. As a result, the adhesion layer is oxidized, the bonding state between the adhesion layer and the conductive layer, or the adhesion layer and the substrate is denatured, and the adhesion is deteriorated. Therefore, in this embodiment, titanium oxide (TiO ₂ ) is used as the adhesion layer 11. Such a pre-oxidized substance is generated during the heat treatment of PZT, and is not denatured even when oxygen that has permeated through the conductive layer 12 enters, so that adhesion can be maintained. In addition to this, the adhesion layer 11 includes titanium oxide (Ti _X O _Y , where (X, Y) = (1, 1), (2, 3), (3, 5)), tantalum oxide, and the like. (Ta ₂ O ₅ ), chromium oxide (Cr _X O _Y , where (X, Y) = (1,1), (1,3), (2,3)), zirconium (Zr), Metal oxidation including oxide of at least one material of aluminum (Al), nickel (Ni), hafnium (Hf), vanadium (V), magnesium (Mg), niobium (Nb), or tungsten (W) Can be used.

The dielectric layer 13 is a PZT layer having a thickness of about 100 μm, for example.
In the upper electrode, the conductive layer 15 is, for example, a platinum layer, and is used to apply a voltage to the dielectric layer 13. The adhesion layer 14 is, for example, a titanium oxide layer, and is disposed in order to adhere the conductive layer 15 to the dielectric layer 13. When the upper electrode is formed after the heat treatment of the dielectric layer 13, titanium (Ti) having high adhesion between platinum and PZT may be used as the adhesion layer 14.

Next, a laminated structure according to the second embodiment of the present invention will be described with reference to FIG.
2 includes a lower electrode 21, a plurality of dielectric layers 22, a plurality of internal electrodes (also referred to as intermediate electrodes) including an adhesion layer 23 and a conductive layer 24, an adhesion layer 25, and a conductive layer. 26 and an upper electrode including 26. As described above, a structure in which a plurality of dielectric layers and internal electrodes are alternately stacked can increase the area of the opposing electrodes as a whole structure as compared with a single-layer structure. As a result, the electrical impedance can be lowered. Therefore, it operates efficiently with respect to the applied voltage as compared with a single-layer structure.

The lower electrode 21 is, for example, a platinum layer, and has a thickness of about 300 nm in consideration of the thickness of the anchor layer generated when the dielectric layer 22 is formed on the upper layer.
The dielectric layer 22 is a PZT layer having a thickness of about 100 μm, for example. The upper surface (the adhesion layer 23 side) of the dielectric layer 22 has a roughness (surface roughness) of at least 0.3 μm. In the present embodiment, the dielectric layer 22 is coupled to the conductive layer 24 through the adhesion layer 23. However, when a heat treatment of the dielectric layer (PZT layer) is performed in the manufacturing process of the laminated structure, a stress is generated due to a difference in thermal expansion coefficient between the dielectric layer and the adhesion layer, and both are easily peeled off. Therefore, by roughening the upper surface of the dielectric layer 22, the contact area between the dielectric layer and the adhesion layer is increased, and the stress generated by the difference in thermal expansion coefficient is absorbed. With regard to the roughness value, it was confirmed by observation with an AFM (atomic force microscope) that peeling was not caused between the dielectric layer and the adhesion layer when the thickness was 0.3 μm or more.

In the internal electrode, the conductive layer 24 is used to apply a voltage to the dielectric layer 22 disposed on both sides thereof. The material and thickness of the conductive layer 24 are the same as those of the conductive layer 12 shown in FIG. Further, the adhesion layer 23 is an intermediate layer disposed between the two in order to bring the conductive layer 24 into close contact with the dielectric layer 22. The function, material, and thickness of the adhesion layer are the same as those of the adhesion layer 11 shown in FIG.
The configuration of the upper electrode including the adhesion layer 25 and the conductive layer 26 is the same as that of the adhesion layer 14 and the conductive layer 15 shown in FIG.

  Here, in the present embodiment, no adhesion layer is provided between the dielectric layer 22 and the underlying conductive layer 24. This is because when the dielectric layer is formed by the AD method, high adhesion is maintained between these layers by anchoring in which the powder of the material bites into the lower electrode layer.

Next, a laminated structure according to the third embodiment of the present invention will be described with reference to FIG.
A laminated structure 3 shown in FIG. 3 is obtained by forming a laminated structure having a structure similar to that of the laminated structure 2 shown in FIG. The laminated structure 3 includes a substrate 30, a lower electrode including the adhesion layer 31 and the conductive layer 32, a plurality of dielectric layers 33, a plurality of internal electrodes including the adhesion layer 34 and the conductive layer 35, an adhesion layer 36, and And an upper electrode including the conductive layer 37.

The board | substrate 30 is for supporting the structure laminated | stacked on the upper part. The substrate 30 is made of, for example, silicon (Si), and an insulating film (SiO ₂ ) is formed on the upper surface of the substrate 30 in order to electrically insulate a layer formed on the upper portion.
In the lower electrode, the adhesion layer 31 is an intermediate layer disposed between the two in order to adhere the conductive layer 32 to the substrate 30. The function and material of the adhesion layer 31 are the same as those of the adhesion layer 11 shown in FIG.
About the structure of each layer 32-37 laminated | stacked on the upper part of the board | substrate 30, it is the same as that of each layer 21-26 in the laminated structure 2 shown in FIG.

Next, the manufacturing method of the laminated structure which concerns on one Embodiment of this invention is demonstrated, referring FIGS. FIG. 4 is a flowchart showing the manufacturing method of the laminated structure according to this embodiment.
In step S1 of FIG. 4, a substrate 30 for supporting the laminated structure is prepared. That is, a silicon substrate having a predetermined size is prepared, and an insulating film (SiO ₂ ) is formed on at least one surface of the silicon substrate by performing a thermal oxidation process.

  Next, in steps S2 and S3, a lower electrode is formed. That is, in step S2, a titanium oxide layer to be the adhesion layer 31 is formed on the substrate 30 by sputtering or the like, and in step S3, a platinum layer to be the conductive layer 32 is formed thereon by sputtering or the like.

Next, in step S <b> 4, the dielectric layer 33 is formed on the conductive layer 32. In the present embodiment, the PZT layer that is a dielectric layer is formed using the AD method.
FIG. 5 is a schematic diagram showing a film forming apparatus using the AD method. This film forming apparatus has an aerosol generation container 52 in which raw material powder 51 is arranged. Here, the aerosol refers to solid or liquid fine particles suspended in a gas. The aerosol generation container 52 is provided with a carrier gas introduction part 53, an aerosol lead-out part 54, and a vibration part 55. By introducing a gas such as nitrogen gas (N ₂ ) from the carrier gas introduction part 53, the raw material powder disposed in the aerosol generation container 52 is blown up to generate an aerosol. At that time, vibration is applied to the aerosol generation container 52 by the vibration unit 55, whereby the raw material powder is stirred and the aerosol is efficiently generated. The generated aerosol is guided to the deposition chamber 56 through the aerosol deriving unit 54.

  The film forming chamber 56 is provided with an exhaust pipe 57, a nozzle 58, and a movable stage 59. The exhaust pipe 57 is connected to a vacuum pump and exhausts the film forming chamber 56. The aerosol generated in the aerosol generation container 52 and guided to the film forming chamber 56 through the aerosol deriving unit 54 is ejected from the nozzle 58 toward the substrate 50. Thereby, the raw material powder collides and accumulates on the substrate 50. The substrate 50 is placed on a movable stage 59 that can move in three dimensions, and the relative position between the substrate 50 and the nozzle 58 is adjusted by controlling the movable stage 59.

  As a raw material, for example, a PZT single crystal powder having an average particle size of 0.3 μm is used, and the film forming apparatus shown in FIG. 5 is driven, whereby the PZT layer (dielectric layer 33) as shown in FIG. 32 is formed. Here, when the roughness is smaller than 0.3 μm on the upper surface of the formed PZT layer, the surface is roughened by using a surface processing technique such as sand blasting.

  Next, internal electrodes are formed in steps S5 and S6. That is, in step S5, a titanium oxide layer to be the adhesion layer 34 is formed on the dielectric layer 33 by sputtering or the like, and in step S6, a platinum layer to be the conductive layer 35 is formed thereon by sputtering or the like.

In step S7, the dielectric layer 33 is formed as in step S4. By repeating these steps S5 to S7, the necessary number of internal electrodes and dielectric layers are alternately stacked.
In step S8, the laminated body in which a plurality of internal electrodes and a plurality of dielectric layers are alternately laminated is heat-treated in an oxygen atmosphere or air of about 500 ° C. to 1000 ° C. This increases the grain size of the PZT crystal contained in the dielectric layer 33.

  In steps S9 and S10, an upper electrode is formed. That is, in step S9, a titanium oxide layer or a titanium layer that becomes the adhesion layer 36 is formed by sputtering or the like, and in step S10, a platinum layer that becomes the conductive layer 37 is formed thereon by sputtering or the like. Here, in step S9, it is not necessary to consider the roughness on the upper surface of the uppermost dielectric layer 33. This is because the heat treatment has already been completed in step S8, and there is no possibility that the adhesion layer 36 is peeled off due to thermal stress. Thereby, the laminated structure 3 shown in FIG. 3 is manufactured.

  Alternatively, the upper electrode may be formed before the heat treatment in step S8. In this case, the roughness on the upper surface of the uppermost dielectric layer 33 needs to be 0.3 μm or more, like the other dielectric layers 33. In this case, it is desirable to use a metal oxide such as titanium oxide as the material of the adhesion layer 36. This is because if non-oxidized titanium or the like is used, the adhesion layer may be oxidized by oxygen during the heat treatment.

In order to manufacture the single-layer laminated structure 1 shown in FIG. 1, steps S5 to S7 may be omitted in the manufacturing method shown in FIG.
Further, in order to manufacture the laminated structure 2 shown in FIG. 2, in the manufacturing method shown in FIG. 4, steps S2 and S3 are omitted, and after step S10, the substrate is peeled off from the dielectric layer 22, and the substrate is The lower electrode 21 may be disposed on the removed surface.

  Alternatively, in the manufacturing method shown in FIG. 4, steps S2 and S3 may be omitted, and the substrate may be peeled off after step S7, and then heat treatment may be performed. Furthermore, a resist may be formed on the heat treated laminate as necessary, and the upper electrode, the lower electrode, and the side electrode may be formed by plating. In this case, the number of steps can be reduced by forming these electrodes together.

  FIG. 6A is a cross-sectional view showing the structure of a piezoelectric actuator according to an embodiment of the present invention. This piezoelectric actuator includes a piezoelectric layer 61 that expands and contracts when a voltage is applied thereto, two types of internal electrodes 62 including an adhesion layer 62a and a conductive layer 62b, a lower electrode 63 and an upper electrode 64, and two side electrodes. A stacked actuator including 65 and 66.

  As shown in FIG. 6A, the internal electrode 62 and the lower electrode 63 of the first group are connected to the side electrode 65, and the side electrode 66 is formed by the insulating portion 67 formed on the end face of each electrode. Insulated from. On the other hand, the internal electrode 62 and the upper electrode 64 of the second group are connected to the side electrode 66 and insulated from the side electrode 65 by an insulating portion 67 formed on the end face of each electrode. By forming the electrodes 62 to 66 in this way, the actuator structure including the piezoelectric layer and the electrodes sandwiching the piezoelectric layer is connected in parallel. In such a laminated structure, it is possible to increase the output by reducing the impedance of the piezoelectric actuator while miniaturizing the element.

  FIG. 6B is a modification of the piezoelectric actuator shown in FIG. The piezoelectric actuator includes a piezoelectric layer 71, two types of internal electrodes 72 including an adhesion layer 72a and a conductive layer 72b, a lower electrode 73, an upper electrode 74, and side electrodes 75 and 76. In this piezoelectric actuator, the first group of internal electrodes 72 is connected to the side electrode 75 and is insulated from the side electrode 76 by covering the end surface 77 with the upper piezoelectric layer 71. On the contrary, the second group of internal electrodes 72 are connected to the side electrode 76 and insulated from the side electrode 75 by covering the end surface 77 with the upper piezoelectric layer 71. The lower electrode 73 is connected to the side electrode 75 and insulated from the side electrode 76 by the insulating region 78, and the upper electrode 74 is connected to the side electrode 76 and is insulated from the side surface by the insulating region 78. It is insulated from the electrode 75.

Next, a method for manufacturing a piezoelectric actuator according to an embodiment of the present invention will be described with reference to FIGS. 4 and 6A.
First, a piezoelectric material such as PZT is used as the material for the dielectric layer, and in steps S1 and S4 to S7 in FIG. 4, the internal electrodes 62 including the adhesion layer 62a and the conductive layer 62b and the piezoelectric layers 61 are alternately formed. A laminated body is formed. And after removing a board | substrate from a laminated body, heat processing of a laminated structure is performed in step S8. Furthermore, dicing may be performed thereafter to shape the stacked body, and the end face of the internal electrode may be accurately exposed on the side surface of the stacked body.

Next, the lower electrode 63 and the upper electrode 64 are formed on the lower surface and the upper surface of the laminate by sputtering or the like, respectively. Note that these electrodes 63 and 64 may be formed before dicing.
Next, an insulating portion 67 is formed by disposing an insulating material such as glass on the end surfaces of the internal electrode 62, the lower electrode 63, and the upper electrode 64 exposed on the side surface of the laminated body using electrophoresis or the like. To do. Furthermore, the piezoelectric electrodes shown in FIG. 6A are completed by arranging the side electrodes 65 and 66 by sputtering or the like.

  As another manufacturing method of the piezoelectric actuator according to the present embodiment, as shown in FIG. 6B, the internal electrode 72 is formed so that only one end surface of the internal electrode 72 reaches the side surface of the multilayer body. You may do it. In this case, by subsequently forming the piezoelectric layer 71 on the internal electrode 72, the end face on the opposite side of the internal electrode 72 is covered with the piezoelectric material.

Next, in the lower electrode 73 and the upper electrode 74, a resist is formed in a region to be insulated from the side electrodes 75 and 76 (insulating region 78), and then the periphery of the multilayer body is plated. Further, after removing the resist, the plating is removed by dicing the surface where the electrode is not required (the front surface and the surface facing it in FIG. 6B). Thereby, the piezoelectric actuator shown in FIG. 6B is completed.
Note that such an electrode forming method by plating can also be used when manufacturing the piezoelectric actuator shown in FIG.

  As described above, manufacturing yield can be improved by manufacturing a piezoelectric actuator using a laminated structure including an adhesion layer. Moreover, since the dense and strong piezoelectric layer can be formed by using the aerosol deposition method, the withstand voltage of the piezoelectric layer can be increased, and the piezoelectric actuator can be driven at a high voltage.

It is sectional drawing which shows the laminated structure which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the laminated structure which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the laminated structure which concerns on the 3rd Embodiment of this invention. It is a flowchart which shows the manufacturing method of the laminated structure which concerns on one Embodiment of this invention. It is a schematic diagram which shows the structure of the film-forming apparatus using the aerosol deposition method. It is sectional drawing which shows the structure of the piezoelectric actuator which concerns on one Embodiment of this invention.

Explanation of symbols

1, 2, 3 Laminated structure 10, 30, 50 Substrate 11, 14, 23, 25, 31, 34, 36, 62a, 72a Adhesion layer 12, 15, 21, 24, 26, 32, 35, 37, 62b , 72b Conductive layers 13, 22, 33 Dielectric layer 51 Raw material powder 52 Aerosol generation container 53 Carrier gas introduction part 54 Aerosol derivation part 55 Vibration part 56 Deposition chamber 57 Exhaust pipe 58 Nozzle 59 Movable stages 61, 71 Piezoelectric body Layers 62 and 72 Internal electrodes 63 and 73 Lower electrodes 64 and 74 Upper electrodes 65, 66, 75, and 76 Side electrodes 67 Insulating portions 77 End surfaces 78 Insulating regions

Claims (17)

At least one intermediate electrode;
A plurality of dielectric layers stacked via the at least one intermediate electrode;
Comprising
The at least one intermediate electrode includes an adhesion layer formed on the dielectric layer and a conductive layer formed on the dielectric layer via the adhesion layer, and the adhesion layer is made of aluminum , Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, wherein the conductive layer of platinum, ruthenium, iridium, rhenium, osmium, and at least one material of rhodium Or a laminated structure made of the oxide thereof. Wherein the at least one intermediate electrode and said plurality of dielectric layers further comprises a stacked support substrate thereon claim 1 laminated structure according. A support substrate;
An electrode formed on a main surface of the support substrate, wherein the at least one intermediate electrode and the plurality of dielectric layers are stacked thereon;
Further comprising, claim 1 laminated structure according. It said electrodes, and said support contact layer formed on the substrate, the adhesion layer through only contains the said support is formed on a substrate conductive layer, the adhesion layer, aluminum, hafnium, vanadium, magnesium, The conductive layer is made of an oxide of at least one of niobium and tantalum, and the conductive layer is made of at least one of platinum, ruthenium, iridium, rhenium, osmium, and rhodium, or an oxide thereof. becomes, claim 3 multilayer structure according. The laminated structure according to any one of claims 1 to 4 , wherein the dielectric layer is formed by spraying and depositing a powder of a material on a lower layer. Wherein the dielectric layer, the surface of the adhesive layer is placed has a higher roughness 0.3 [mu] m, the laminated structure of any one of claims 1-5. A plurality of piezoelectric layers, a first intermediate electrode, and a second intermediate electrode, wherein the plurality of piezoelectric layers, the first intermediate electrode, and the second intermediate electrode are piezoelectric layers, A laminated structure in which a first intermediate electrode, a piezoelectric layer, and a second intermediate electrode are laminated in this order;
A first side electrode disposed in a first side region of the laminated structure;
A second side electrode disposed in a second side region different from the first side region of the stacked structure;
Each of the first and second intermediate electrodes includes an adhesion layer formed on the piezoelectric layer, and a conductive layer formed on the piezoelectric layer via the adhesion layer. The first intermediate electrode is connected to the first side electrode and insulated from the second side electrode, and the second intermediate electrode is connected to the second side electrode. together are the are insulated from the first side electrode, wherein the adhesion layer is made of aluminum, c Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, The piezoelectric actuator, wherein the conductive layer is made of at least one material selected from platinum, ruthenium, iridium, rhenium, osmium, and rhodium, or an oxide thereof. A method of manufacturing a laminated structure,
(A) disposing the first electrode by forming a conductive layer on the support substrate via the adhesion layer;
Disposing a dielectric layer on the first electrode by spraying and depositing a powder of dielectric material on the first electrode; and (b),
(C) disposing a second electrode by forming a conductive layer on the dielectric layer via an adhesion layer;
Placing a dielectric layer on the second electrode by spraying and depositing a powder of dielectric material on the second electrode; (d);
Heat treating these dielectric layers (e);
Before or after step (e), forming a third electrode on the dielectric layer disposed in step (d); and (f)
Comprising a, the adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, wherein the conductive layer of platinum, ruthenium, iridium, rhenium, A production method comprising at least one material of osmium and rhodium or an oxide thereof. The manufacturing method according to claim 8 , further comprising a step of repeating steps (c) to (d) a predetermined number of times. A method of manufacturing a laminated structure,
Placing a dielectric layer by spraying and depositing a powder of dielectric material on a support substrate; and
(B) disposing a first electrode by forming a conductive layer on the dielectric layer via an adhesion layer;
Disposing a dielectric layer on the first electrode by spraying and depositing a powder of dielectric material on the first electrode;
Heat treating these dielectric layers (d);
Forming a second electrode on the dielectric layer disposed in step (c) before or after step (d); and
Removing the support substrate from the dielectric layer disposed in step (a) (f);
Comprising a, the adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, wherein the conductive layer of platinum, ruthenium, iridium, rhenium, A production method comprising at least one material of osmium and rhodium or an oxide thereof. The manufacturing method according to claim 10 , further comprising the step of repeating steps (b) to (c) a predetermined number of times. A method of manufacturing a piezoelectric actuator having a laminated structure,
(A) disposing a piezoelectric layer by spraying and depositing a powder of piezoelectric material on a support substrate;
(B) disposing a first intermediate electrode by forming a conductive layer on the piezoelectric layer via an adhesion layer;
Disposing a piezoelectric layer on the first intermediate electrode by spraying and depositing a powder of piezoelectric material on the first intermediate electrode;
A step (d) of disposing a second intermediate electrode by forming a conductive layer on the piezoelectric layer via an adhesion layer;
Disposing a piezoelectric layer on the second intermediate electrode by spraying and depositing a powder of piezoelectric material on the second intermediate electrode (e);
Heat-treating these piezoelectric layers (f);
Removing the support substrate from the piezoelectric layer disposed in step (a) (g);
Forming a side electrode on at least the first and second side surfaces of the laminated structure (h);
Comprising a, the adhesion layer, aluminum, Ha Funiumu, vanadium, magnesium, niobium, and an oxide of at least one material of the tantalum, wherein the conductive layer of platinum, ruthenium, iridium, rhenium, A production method comprising at least one material of osmium and rhodium or an oxide thereof. The manufacturing method according to claim 12 , further comprising the step of repeating steps (b) to (e) a predetermined number of times. Forming an insulating portion on an end surface of the first intermediate electrode exposed at the first side surface of the multilayer structure formed in steps (a) to (g);
Forming an insulating portion on an end surface of the second intermediate electrode exposed on a second side surface different from the first side surface of the multilayer structure formed in steps (a) to (g);
The manufacturing method according to claim 12 or 13 , further comprising: Step (c) includes disposing the piezoelectric layer so as to cover an end face of the first intermediate electrode on the first side of the multilayer structure,
Step (e) includes disposing the piezoelectric layer so as to cover an end surface of the second intermediate electrode on a second side different from the first side of the multilayer structure.
The manufacturing method of Claim 12 or 13 . Before or after step (f), forming a first electrode on the principal surface of the piezoelectric layer disposed in step (e);
Forming a second electrode on the surface from which the support substrate has been removed in step (g);
Further comprising The method of any one of claims 12-15. Step (h) includes first and second side surfaces of the laminated structure, a main surface of the piezoelectric layer disposed in Step (e), and a surface from which the support substrate is removed in Step (g). to and forming an electrode, a manufacturing method according to any one of claims 12-15.

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