JP4998923B2 - シリコンベースの高効率太陽電池およびその製造方法 - Google Patents
シリコンベースの高効率太陽電池およびその製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 40
- 239000010703 silicon Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 229910016066 BaSi Inorganic materials 0.000 claims description 185
- 229910052751 metal Inorganic materials 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 59
- 229910021332 silicide Inorganic materials 0.000 claims description 50
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 48
- 150000001342 alkaline earth metals Chemical group 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 23
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 20
- 230000000737 periodic effect Effects 0.000 claims description 17
- 229910019001 CoSi Inorganic materials 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 description 37
- 239000013078 crystal Substances 0.000 description 31
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 14
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000700 radioactive tracer Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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Description
太陽電池材料の各層形成後の表面の結晶構造を反射高速電子線回折装置(ANELVA社製、型番:VT−580−017)により観察した。
太陽電池材料の結晶構造をX線回折((株)リガク製RINT2000シリーズ)により観察した。
伝導型およびキャリア密度をHall測定により評価した。電流源として(株)アドバンテスト製R6240Aを用い、電圧計として(株)アドバンテスト製R6441Dを用い、磁場発生源として電子磁気工業(株)製の直流電源装置を用い、室温で測定した。
得られた太陽電池のn+型BaSi2層に対してCoSi2層にカーブトレーサー装置(菊水電子社製、型番:5802)を用いて正極の電圧を−9Vから+9Vまで室温で印加し、流れた電流量を前記カーブトレーサー装置を用いて測定した。
図7に示す断面構造を有する太陽電池を作製した。結晶成長には分子線エピタキシー結晶成長装置(RIBER社製、型番:MBE−2300)を使用した。先ず、超高真空チャンバー内(0.0001mPa)でp型のSi基板11を850℃で30分間加熱して基板表面の酸化膜を除去し、Si(111)清浄表面を得た。次いで、室温でCo分子を蒸着速度2nm/分で前記Si(111)清浄表面に蒸着させ、前記Si基板11上に7nm厚のCo層を形成した。この基板を700℃で5分間アニール処理してCo原子とSi原子とを反応させ、前記Si基板11上に20nm厚のCoSi2層14を形成した。CoSi2層14形成後の太陽電池材料のRHEEDパターンを図8に示す。
Claims (13)
- 少なくとも一方の表面がSiである基板と、
前記基板のSi表面のうちの1つの表面上に配置されている、エピタキシャル成長により形成されたBa原子とSi原子とを含有するn型BaSi2層と、
前記n型BaSi2層上に配置されている周期表13〜15族に属する少なくとも1種の不純物原子とBa原子とSi原子とを含有するn+型BaSi2層と、
前記n+型BaSi2層上に配置されている上部電極と、
前記基板の一方の表面上に配置されている下部電極と、
を備えることを特徴とするシリコンベースの高効率太陽電池。 - 前記n型BaSi2層と該n型BaSi2層が配置されているSi表面との間に、周期表9〜10族に属する少なくとも1種の金属原子とSi原子とを含有する金属シリサイド層をさらに備えることを特徴とする請求項1に記載のシリコンベースの高効率太陽電池。
- 前記下部電極が前記金属シリサイド層の一方の表面上に配置されていることを特徴とする請求項2に記載のシリコンベースの高効率太陽電池。
- 前記金属シリサイド層がCo原子とSi原子とを含有するCoSi2層であることを特徴とする請求項2または3に記載のシリコンベースの高効率太陽電池。
- 前記n型BaSi2層および/または前記n+型BaSi2層がさらにSr原子、Ca原子およびMg原子からなる群から選択される少なくとも1種のアルカリ土類金属原子を含むことを特徴とする請求項1〜4のうちのいずれか一項に記載のシリコンベースの高効率太陽電池。
- 前記n型BaSi2層の厚みが0.2〜1.0μmであり、前記n+型BaSi2層の厚みが0.01〜0.1μmであることを特徴とする請求項1〜5のうちのいずれか一項に記載のシリコンベースの高効率太陽電池。
- 少なくとも一方の表面がSiである基板のSi表面のうちの1つの表面にBa原子を導入してSi原子とBa原子とを反応させてエピタキシャル成長によりn型BaSi2層を形成する工程と、
前記n型BaSi2層の表面に周期表13〜15族に属する少なくとも1種の不純物原子とBa原子とSi原子とを反応させてn+型BaSi2層を形成する工程と、
前記基板の一方の表面に下部電極を形成する工程と、
前記n+型BaSi2層の表面に上部電極を形成する工程と、
を含むことを特徴とするシリコンベースの高効率太陽電池の製造方法。 - 前記n型BaSi2層を形成する工程において、前記基板のSi表面のうちの1つの表面にBa原子を導入してSi原子とBa原子とを反応させてエピタキシャル成長によりn型BaSi2極薄層を形成した後、さらに前記n型BaSi2極薄層上でBa原子とSi原子とを反応させてエピタキシャル成長により前記n型BaSi2層を形成することを特徴とする請求項7に記載のシリコンベースの高効率太陽電池の製造方法。
- 少なくとも一方の表面がSiである基板のSi表面のうちの1つの表面に周期表9〜10族に属する金属原子を導入してSi原子と前記金属原子とを反応させて金属シリサイド層を形成する工程と、
前記金属シリサイド層の表面にSi極薄層を形成する工程と、
前記Si極薄層にBa原子を導入してBa原子とSi原子とを反応させてエピタキシャル成長によりn型BaSi2層を形成する工程と、
前記n型BaSi2層の表面に周期表13〜15族に属する少なくとも1種の不純物原子とBa原子とSi原子とを反応させてn+型BaSi2層を形成する工程と、
前記金属シリサイド層の一方の表面または前記基板の一方の表面に下部電極を形成する工程と、
前記n+型BaSi2層の表面に上部電極を形成する工程と、
を含むことを特徴とするシリコンベースの高効率太陽電池の製造方法。 - 前記n型BaSi2層を形成する工程において、前記Si極薄層にBa原子を導入してSi原子とBa原子とを反応させてエピタキシャル成長によりn型BaSi2極薄層を形成した後、さらに前記n型BaSi2極薄層上でBa原子とSi原子とを反応させてエピタキシャル成長により前記BaSi2層を形成することを特徴とする請求項9に記載のシリコンベースの高効率太陽電池の製造方法。
- 前記n型BaSi2層を形成する工程においてエピタキシャル成長させる際に、さらにSr原子、Ca原子およびMg原子からなる群から選択される少なくとも1種のアルカリ土類金属原子を反応させることを特徴とする請求項8または10に記載のシリコンベースの高効率太陽電池の製造方法。
- 前記n+型BaSi2層を形成する工程においてエピタキシャル成長させる際に、さらにSr原子、Ca原子およびMg原子からなる群から選択される少なくとも1種のアルカリ土類金属原子を反応させることを特徴とする請求項7〜11のうちのいずれか一項に記載のシリコンベースの高効率太陽電池の製造方法。
- 前記n型BaSi2層の厚みが0.2〜1.0μmであり、前記n+型BaSi2層の厚みが0.01〜0.1μmであることを特徴とする請求項7〜12のうちのいずれか一項に記載のシリコンベースの高効率太陽電池の製造方法。
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WO2009028560A1 (ja) * | 2007-08-30 | 2009-03-05 | Japan Science And Technology Agency | 半導体材料、それを用いた太陽電池、およびそれらの製造方法 |
JP5550025B2 (ja) * | 2009-05-12 | 2014-07-16 | 国立大学法人 筑波大学 | 半導体装置およびその製造方法並びに太陽電池 |
JP5732978B2 (ja) * | 2011-03-31 | 2015-06-10 | 東ソー株式会社 | 珪化バリウム多結晶体、その製造方法ならびに珪化バリウムスパッタリングターゲット |
EP2728624A4 (en) * | 2011-07-25 | 2015-05-27 | Hitachi Chemical Co Ltd | SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD, SOLAR CELL ELEMENT AND SOLAR CELL |
JP2016084262A (ja) * | 2014-10-28 | 2016-05-19 | 東ソー株式会社 | 珪化バリウム系多結晶体及びその用途 |
JP6478369B2 (ja) * | 2014-02-27 | 2019-03-06 | 東ソー株式会社 | 珪化バリウム膜およびその製造方法 |
JP2016000674A (ja) * | 2014-06-12 | 2016-01-07 | 東ソー株式会社 | 珪化バリウム系多結晶体及び前記珪化バリウム多結晶体からなるスパッタリングターゲット又は熱電変換素子 |
TW201536679A (zh) * | 2014-02-27 | 2015-10-01 | Tosoh Corp | 矽化鋇系塊狀體、膜及其製造方法 |
JP6428439B2 (ja) * | 2014-04-30 | 2018-11-28 | 東ソー株式会社 | 珪化バリウム系バルク体、珪化バリウム系スパッタリングターゲット及びそれを用いた珪化バリウム系結晶膜の製造方法 |
JP2016008316A (ja) * | 2014-06-23 | 2016-01-18 | 国立大学法人名古屋大学 | MSi2(MはMg、Ca、Sr、Ba、Raから選択される少なくとも1種のアルカリ土類金属)膜の製造方法 |
JP6347041B2 (ja) * | 2014-08-22 | 2018-06-27 | 東ソー株式会社 | 珪化バリウム系積層材及びその製造方法 |
JP6534088B2 (ja) * | 2014-09-04 | 2019-06-26 | 国立大学法人名古屋大学 | 太陽電池 |
JP2018018986A (ja) * | 2016-07-28 | 2018-02-01 | 株式会社 エヌティーアイ | 光電変換装置 |
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