JP4988676B2 - Semiconductor circuit device - Google Patents

Description

  The present invention relates to a semiconductor circuit device that controls an alternating current having a predetermined frequency, and more particularly, to a semiconductor circuit device having a low current resistance of a circuit through which a high-frequency current flows.

Examples of the semiconductor circuit device having a circuit through which a high-frequency current flows include a semiconductor circuit device that boosts or lowers a power supply voltage, or a semiconductor circuit device that converts direct current into alternating current or converts alternating current into direct current. . In these semiconductor circuit devices, a semiconductor switch by a switching element is provided in the circuit, and the on / off operation of the semiconductor switch is repeated. For example, a booster circuit such as a DC / DC converter uses an inverter circuit having a switching element to convert a direct current into an alternating current having a relatively high frequency, then boosts the voltage through a transformer, and further passes the direct current through a rectifier circuit using the switching element. Has been converted.
In such a semiconductor circuit device, current flows only in the vicinity of the skin of the conductor of the circuit through which the high-frequency current flows, due to the skin effect. This increases the electrical resistance of the conductor and increases the heat generation in the conductor, which increases the loss of the semiconductor circuit device and greatly impairs its efficiency.

  As a printed wiring board having a wiring conductor through which a high-frequency current flows, which solves such a problem, the surface of the wiring conductor body formed on the surface of the insulating substrate, along the direction of the high-frequency current flowing through the wiring conductor body. A printed wiring board formed by contacting an additional conductor is disclosed. In this printed wiring board, a wiring conductor is formed of a wiring conductor body and an additional conductor, thereby increasing the surface area of the wiring conductor and suppressing electrical resistance against high-frequency current (for example, see Patent Document 1). .

  Further, in the semiconductor circuit device having the above switching element, the heat generation of the wiring portion increases as the electric power increases. Therefore, it is necessary to efficiently dissipate this heat and cool the wiring portion. Therefore, on the wiring board, an insulating layer 78 made of resin or ceramic is formed on a metal base 77 having good heat conductivity such as aluminum or copper as shown in the schematic partial cross section of FIG. An insulating substrate 701 on which a wiring conductor 70 through which flows is formed is used.

JP 2000-124561 A (3rd page, FIG. 1)

  In a printed wiring board formed by bringing an additional conductor in contact with the surface of the wiring conductor body formed on the surface of the insulating substrate along the direction of the high-frequency current flowing in the wiring conductor body, the surface area of the wiring conductor increases. , The increase is only on both sides of the additional conductor, the effect of increasing the surface area of the wiring conductor is poor, energization resistance when high-frequency current is passed is still large, suppressing the heat generation of the wiring part of the printed wiring board There is a problem that the semiconductor circuit device cannot be increased in current and efficiency.

Further, in an insulating substrate 701 having a metal base 77 and excellent in cooling performance as shown in FIG. 12, the metal base 77 and the wiring conductor 70 are opposed to each other with an insulating layer 78 interposed therebetween. When a high-frequency current is passed through the wiring conductor 70, a current flows only in the vicinity of the skin of the wiring conductor 70. However, a near-skinned conduction path (referred to as a bottom-surface near-skinning conduction path) generated on the surface of the wiring conductor 70 facing the metal substrate 77. Due to the current flowing through 70n, an eddy current flows through the eddy current generating portion 78 generated in the metal base 77, and there is a problem that heat is generated by the eddy current.
In addition, the current flowing in the vicinity of the skin of the wiring conductor 70 flows biased to the bottom surface near-skinned conduction path 70n due to the proximity effect between the wiring conductor 70 and the metal base 77, so that the energization resistance is increased and the current in the wiring portion is increased. There was also a problem that heat generation increased.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor having a circuit in which a high-frequency current flows, such as a semiconductor circuit device having a circuit in which an alternating current generated by a switching element flows. It is an object of the present invention to provide a semiconductor circuit device capable of suppressing heat generation from a wiring circuit and increasing current and reliability.

  A first semiconductor circuit device according to the present invention is formed of a metal substrate, an insulating layer provided on the surface of the metal substrate, and a wiring conductor provided on the surface of the insulating layer and mounting a switching element. A semiconductor circuit device including a circuit board, wherein the wiring conductor is a plurality of input-side wiring conductors, a plurality of output-side wiring conductors that are energized with a high-frequency current and that includes a bottom surface portion and a side wall portion, and a plurality of controls. A side wiring conductor is formed, and side walls of adjacent output side wiring conductors in a plurality of output side wiring conductors are arranged substantially in parallel with each other.

  A first semiconductor circuit device according to the present invention is formed of a metal substrate, an insulating layer provided on the surface of the metal substrate, and a wiring conductor provided on the surface of the insulating layer and mounting a switching element. A semiconductor circuit device including a circuit board, wherein the wiring conductor is a plurality of input-side wiring conductors, a plurality of output-side wiring conductors that are energized with a high-frequency current and that includes a bottom surface portion and a side wall portion, and a plurality of controls. The side wall portions of the adjacent output side wiring conductors in the plurality of output side wiring conductors are arranged in close proximity to each other, and the skin of the output side wiring conductor through which a high-frequency current flows. Since the area of the nearby energization path is large and the energization resistance is low, and the eddy current generated in the metal substrate is small, heat generation from the circuit board can be suppressed, and a large current and high reliability can be realized.

Embodiment 1 FIG.
FIG. 1 is a circuit diagram of a semiconductor circuit device according to the first embodiment of the present invention.
In FIG. 1, the circuit of the semiconductor circuit device 100 according to the present embodiment is a dotted line portion in the figure, and the DC power supplied from the power source 3 is converted into AC by driving the switching element 1 to the output terminal 1a. It is a circuit to output.
The switching element 1 is turned on when a voltage or current for driving to the gate terminal 1b is applied from a control unit (not shown) to flow current. Further, the capacitor 4 in parallel with the power source 3 has a very small inductance with the switching element 1 compared to the inductance from the power source 3, and the current when the switching element 1 is turned on is instantaneously generated. It is provided so that it can be supplied.
The semiconductor circuit device 100 and the power source 3 are connected by a harness 5. For example, the harness 5 is fixed to a terminal block 6 provided on the semiconductor circuit device 100 side. Further, between the terminal block 6 and the capacitor 4 and the switching element 1 or between the switching elements 1 are electrically connected by a bus bar provided in the semiconductor circuit device 100 or wiring on the circuit board.

FIG. 2 is a schematic perspective view showing one example of a circuit board on which a switching element is mounted in the semiconductor circuit device according to the first embodiment of the present invention.
As shown in FIG. 2, the circuit board 101 in the semiconductor circuit device 100 of the present embodiment includes a metal base 7, an insulating layer 8 made of a resin provided on the surface of the metal base 7, and the insulating layer 8. The wiring conductor 10 is provided on the surface (referred to as the surface of the insulating layer) facing the bonding surface with the metal substrate 7.
The wiring conductor 10 includes an input-side wiring conductor 12 that supplies a direct current to the switching element 1, an output-side wiring conductor 13 that outputs an alternating current from the switching element 1, and a signal from the control unit as a gate of the switching element 1. And a control-side wiring conductor 14 for energizing the terminal 1b. The output-side wiring conductor 13 has a U-shape, and the side wall portions of the adjacent output-side wiring conductors 13 are arranged close to each other in parallel.
Further, the switching element 1 is mounted at a predetermined position on the circuit board 101 by a joining method such as soldering.
The switching element 1 is packaged with a mold resin, and lead terminals 11 protruding from the side surfaces of the mold resin package are joined to corresponding wiring conductors. Although not shown, it may be a joint between an electrode provided on the back surface of the mold resin package and a corresponding wiring conductor.

FIG. 3 is a schematic cross-sectional view of a model circuit board used for explaining the effects of the semiconductor circuit device according to the first embodiment of the present invention. The cross section of the model circuit board is a cross section perpendicular to the energization direction of the wiring conductor.
As shown in FIG. 3, the model circuit board 102 includes a metal base 7, a resin insulating layer 8 provided on the surface thereof, and a width and thickness provided on the surface of the insulating layer 8 both of 10 mm. The first wiring conductor 10a, the second wiring conductor 10b, and the insulating member 15 filled in the gap between the wall surface of the first wiring conductor 10a and the wall surface of the second wiring conductor 10b are provided. In the model circuit board 102, alternating currents having different phases can be supplied to the first wiring conductor 10a and the second wiring conductor 10b in a direction perpendicular to the cross section of each wiring conductor.

In the model circuit board 102 shown in FIG. 3, the distance D between the wall surface of the first wiring conductor 10a and the wall surface of the second wiring conductor 10b that are in contact with each other via the insulating member 15 (referred to as a distance between wiring conductors) D is changed. The energization resistance of the wiring conductor when alternating currents having a phase of 60 kHz are passed through the wiring conductor is shown in FIG. In the graph of FIG. 4, the horizontal axis is the distance D between the wiring conductors, and the vertical axis is the energization resistance. As shown in FIG. 4, it has been found that when the wiring conductor distance D becomes smaller than a specific value X, the energization resistance decreases as the wiring conductor distance D decreases.
This is because, when alternating currents having different phases are passed through the opposing wiring conductors, the area of the near-skinded conduction path 10m generated on the surface where the wiring conductors face each other increases, and a large amount of current can flow due to the proximity effect. .
In the model circuit board 102 shown in FIG. 3, the insulating member 15 is filled in the gap between the wall surface of the first wiring conductor 10a and the wall surface of the second wiring conductor 10b. Although not shown, if the necessary creepage distance and insulation distance based on a predetermined operating voltage can be secured, the energization resistance can be lowered by bringing the wiring members close to each other without providing the insulation member 15.

FIG. 5 is a schematic cross-sectional view of the output-side wiring conductor portion in the circuit board of the semiconductor circuit device according to Embodiment 1 of the present invention. The cross section of the circuit board shown here is a cross section perpendicular to the energization direction in the output side wiring conductor portion.
As shown in FIG. 5, in the circuit board 101 of the present embodiment, the first output having a U-shaped cross section perpendicular to the energizing direction on the surface of the insulating layer 8 provided on the metal base 7. The side wiring conductor 13a, the second output side wiring conductor 13b, and the third output side wiring conductor 13c are provided in parallel.
And one side wall part (referred to as first one side wall part) 13ab of the first output side wiring conductor 13a and one side wall part (second side wall) of the second output side wiring conductor 13b adjacent thereto. 13ba (referred to as one side wall portion of 2) and 13ba close to a substantially parallel side wall portion (referred to as third one side wall portion) 13cb on one side of the third output side wiring conductor 13c, The second output side wiring conductor 13b adjacent to the other side wall portion 13b (referred to as the second other side wall portion) 13bc is close to each other in parallel.

In the semiconductor circuit device 100 of the present embodiment, since the circuit board 101 has such a structure, the first output side wiring conductor 13a, the second output side wiring conductor 13b, and the third output side wiring conductor 13c. In addition, when high-frequency currents having different phases flow, the first one-side sidewall portion 13ab, the second one-side sidewall portion 13ba, the second other-side sidewall portion 13bc, and the third one-side sidewall In the portion 13cb, due to the proximity effect between the wiring conductors, the area of the near skin energization path (referred to as the side skin near energization path) 13m generated on the surface facing the other output side wiring conductor is increased, and the energization resistance is decreased. To do.
Further, the circuit board 101 of the semiconductor circuit device 100 of the present embodiment includes a bottom portion (referred to as a first bottom portion) 13ad of the first output side wiring conductor 13a and a bottom portion (second portion) of the second output side wiring conductor 13b. 13bd and the bottom portion (denoted as the third bottom portion) 13cd of the third output side wiring conductor 13c are opposed to each other through the metal base 7 and the insulating layer 8, so that the proximity effect causes the metal A skin vicinity energization path (referred to as a bottom surface skin vicinity energization path) 13n is generated on the surface facing the substrate 7. However, since the area of the side skin vicinity energization path 13m in the side wall portions 13ab, 13ba, 13bc, 13cb of each output side wiring conductor increases and a large amount of current flows in this portion, the current flowing in the bottom skin vicinity energization path 13n is reduced. As a result, the eddy current generated in the eddy current generating portion 13f of the metal substrate 7 by this current can be reduced.

In the semiconductor circuit device 100 of the present embodiment, the area near the skin of the output side wiring conductor 13 through which high-frequency current flows is large, the conduction resistance is low, and the eddy current generated in the metal substrate 7 is small. Therefore, the current capacity can be increased and the reliability is excellent.
In the semiconductor circuit device 100 of the present embodiment, there is a gap between adjacent output side wiring conductors, but an insulating member 16 is provided between adjacent output side wiring conductors as in the circuit board 101a shown in FIG. May be. In FIG. 6, the top of the side wall of the output side wiring conductor also covers the insulating member 16, and a sufficient creeping insulation distance can be maintained even if the distance between adjacent output side wiring conductors is short. However, if the voltage of the semiconductor circuit device 100 is not particularly high, the insulating member 16 may not cover the top of the side wall of the output side wiring conductor.
Further, when an insulating member is filled between adjacent output side wiring conductors, foreign matter can be prevented from entering between adjacent output side wiring conductors, and insulation reliability when the output side wiring conductors are brought close to each other is improved.
Further, even if the output side wiring conductor has a rectangular cross-sectional shape, the same effect can be obtained if the side walls are arranged close to each other. However, in the semiconductor circuit device 100 of the present embodiment, the output side wiring Since the cross-sectional shape of the conductor 13 is a U-shape, the vicinity of the center where substantially no current flows is eliminated due to the skin effect, and the weight of the circuit board can be reduced.
In the present embodiment, resin is used for the insulating layer 8, but the present invention is not limited to this, and ceramic may be used.

In the semiconductor circuit device of the present embodiment, the effect is remarkable when a MOSFET is used as the switching element. A MOSFET is an element capable of high-frequency operation. However, when operated at a high frequency, eddy current loss increases, and the original function cannot be exhibited. However, as described in this embodiment, a structure that can reduce eddy current can realize a highly efficient semiconductor circuit device that sufficiently draws out the high-frequency and low-loss function of the MOSFET.
In addition, since the semiconductor circuit device according to the present embodiment is highly effective for high-frequency currents in a frequency region in which the frequency exceeds several tens of kHz, the switching element is a SiC element that can operate at a higher frequency than a conventional Si element. In particular, it has an excellent effect. That is, in the semiconductor circuit device of high frequency operation using SiC, the eddy current loss increases in the circuit portion provided with the wiring conductor, but in the semiconductor circuit device of the present embodiment, this eddy current loss can be reduced. A highly efficient semiconductor circuit device can be realized in which the high frequency and low loss function of the SiC element is sufficiently extracted.
Further, the effects of the semiconductor circuit device of the present embodiment are not limited to those of the circuit shown in FIG. 1, but include a circuit that handles an alternating current having a high frequency by a switching element such as a DC / DC converter. Anything is fine.
In the semiconductor circuit device of another embodiment, the same effect can be obtained even when a MOSFET or SiC element is used as the switching element.

Embodiment 2. FIG.
FIG. 7 is a schematic cross-sectional view of the output-side wiring conductor portion in the circuit board of the semiconductor circuit device according to the second embodiment of the present invention.
As shown in FIG. 7, the circuit board 201 used in the semiconductor circuit device of the present embodiment has the output wiring conductors 13 and the insulating members 16 of the first embodiment on the surfaces of the metal base 7 and the metal base 7. The semiconductor circuit device is the same as that of the first embodiment except that it is provided on the wiring substrate 20 including the provided insulating layer 8 and the metal patterns 20a, 20b, and 20c provided on the surface of the insulating layer 8. Each output wiring conductor 13 is joined to the corresponding metal pattern 20a, 20b, 20c by a method such as soldering or bonding.
Also in the present embodiment, a gap may be present between adjacent output side wiring conductors.
The semiconductor circuit device according to the present embodiment has the same effect as the semiconductor circuit device according to the first embodiment, and the manufacturing cost of the circuit board is reduced. In the present embodiment, examples of the member used for the insulating layer 8 include resins and ceramics.

Embodiment 3 FIG.
FIG. 8 is a schematic cross-sectional view of a wiring conductor portion in a circuit board of a semiconductor circuit device according to Embodiment 3 of the present invention. The cross section of the wiring conductor portion shown here is a cross section perpendicular to the energization direction.
As shown in FIG. 8, the circuit board 301 of the semiconductor circuit device of the present embodiment is supplied with a metal base 7, an insulating layer 8 provided on the surface thereof, and a high-frequency current provided on the surface of the insulating layer 8. The first L-shaped wiring conductor 30a and the second L-shaped wiring conductor 30b whose cross section perpendicular to the energizing direction is L-shaped, and the side wall portions of the first L-shaped wiring conductor 30a 30b and the insulating member 36 filled in the gap between the side wall portion 30ba of the second L-shaped wiring conductor 30b. Then, high-frequency currents having different phases can be passed through the first L-shaped wiring conductor 30a and the second L-shaped wiring conductor 30b.

In the present embodiment, the side wall portion 30ab of the first L-shaped wiring conductor 30a and the side wall portion 30ba of the second L-shaped wiring conductor 30b are provided in contact with each other via the insulating member 36. Due to the proximity effect, the area of the side skin vicinity conducting path 30m generated on each side of the side wall portion 30ab and the side wall portion 30ba facing the other L-shaped wiring conductor increases, and the conduction resistance of the wiring conductor decreases.
Further, since the current flowing through the side skin vicinity energization path 30m increases, the bottom 30ad of the first L-shaped wiring conductor 30a and the bottom 30bd of the second L-shaped wiring conductor 30b face the metal substrate 7. The area of the bottom surface near-surface energization path 30n generated on each surface is reduced, and the current flowing through the bottom portions 30ad and 30bd of each L-shaped wiring conductor is reduced. As a result, the eddy current generated in the eddy current generating portion 30f of the metal substrate 7 is also reduced.

The semiconductor circuit device of the present embodiment has a large area near the skin of the wiring conductor through which high-frequency current flows, a low energization resistance, a small eddy current generated in the metal substrate, and heat generation from the circuit board is suppressed. Therefore, the current capacity can be increased and the reliability is excellent.
In the present embodiment, since the wiring conductor has a shape in which the vicinity of the central portion where current does not substantially flow due to the skin effect is deleted, the circuit board can be reduced in weight.
In this embodiment, the cross section of the wiring conductor is L-shaped, but has a side wall portion that can be adjacent to other wiring conductors, and the vicinity of the central portion where no current substantially flows due to the skin effect has been deleted. The cross-sectional shape is not limited to the wiring conductor having an L-shaped cross section. For example, a wiring conductor having a hollow cross section may be used.

In the circuit board 301 in the present embodiment, the insulating member 36 is filled in the gap between the side wall 30ab of the first L-shaped wiring conductor 30a and the side wall 30ba of the second L-shaped wiring conductor 30b. However, a gap may be provided between the side wall portion 30ab of the first L-shaped wiring conductor 30a and the side wall portion 30ba of the second L-shaped wiring conductor 30b without using the insulating member 36.
Further, the second L-shaped wiring conductor may be a conductive member that does not flow a high-frequency current, independent of the wiring circuit.
In the present embodiment, the wiring conductor is provided on the surface of the insulating layer. However, the wiring substrate includes a metal base, an insulating layer provided on the surface of the metal base, and a metal pattern provided on the surface of the insulating layer. It may be joined on the metal pattern by a method such as soldering. In this case, examples of the material for the insulating layer include resin and ceramics, and the manufacturing cost of the circuit board is reduced. Such a configuration can be applied to the semiconductor circuit devices of Embodiments 4 to 6 described later, and similar effects can be obtained.

Embodiment 4 FIG.
FIG. 9 is a schematic cross-sectional view of a wiring conductor portion in a circuit board of a semiconductor circuit device according to Embodiment 4 of the present invention. The cross section of the wiring conductor portion shown here is a cross section perpendicular to the energization direction.
As shown in FIG. 9, the circuit board 401 of the semiconductor circuit device of the present embodiment has a metal base 7, an insulating layer 8 provided on the surface thereof, and a high-frequency current provided on the surface of the insulating layer 8. In addition, a wiring conductor 40 having a rectangular cross section perpendicular to the energizing direction and a surface (referred to as the upper surface of the wiring conductor) facing the surface joined to the insulating layer 8 of the wiring conductor 40 are interposed via an insulating member 46. The conductive member 47 provided is provided. The conductive member 47 is used as a wiring circuit, and can pass a high-frequency current having a phase different from that of the wiring conductor 40.
The wiring conductor portion is formed by bonding and mounting the wiring conductor 40 to the insulating layer 8 and then bonding the conductive member 47 to the wiring conductor 40 via the insulating member 46. Alternatively, the wiring conductor 40 in which the conductive member 47 is provided in advance via the insulating member 46 is joined to the insulating layer 8 and mounted.
In the present embodiment, since the upper surface of the wiring conductor 40 is close to the conductive member 47, the area of the upper surface skin vicinity energization path 40k generated on the upper surface of the wiring conductor 40 increases, and the energization resistance decreases.
Further, the area of the bottom surface near-surface energization path 47n generated on the bottom surface of the conductive member 47 increases, and the energization resistance of the conductive member 47 also decreases.

Further, since the joint surface of the wiring conductor 40 with the insulating layer 8 (referred to as the bottom surface of the wiring conductor) is close to the metal substrate 7, a bottom skin vicinity conducting path 40n is generated in this portion. However, due to the proximity effect, since the current flowing through the top surface vicinity conducting path 40k is large, the current flowing through the bottom surface vicinity conducting path 40n is small, and the eddy current generated in the eddy current generating portion 40f of the metal base 7 is also small.
The semiconductor circuit device of the present embodiment has a large area near the skin of the wiring conductor through which high-frequency current flows, a low energization resistance, a small eddy current generated in the metal substrate, and heat generation from the circuit board is suppressed. Therefore, the current capacity can be increased and the reliability is excellent.
In the present embodiment, the conductive member 47 is configured to allow a high-frequency current having a phase different from that of the wiring conductor 40 to flow, and the conductive member 47 is a wiring conductor, but the conductive member 47 is independent of the wiring circuit. Also good. Although the effect is smaller than when the conductive member 47 is a wiring circuit, even in this case, the proximity effect increases the area of the upper surface skin vicinity energization path 40k and decreases the energization resistance.

Embodiment 5 FIG.
FIG. 10 is a schematic cross-sectional view of a wiring conductor portion in a circuit board of a semiconductor circuit device according to Embodiment 5 of the present invention. The cross section of the wiring conductor portion shown here is a cross section perpendicular to the energization direction.
As shown in FIG. 10, the circuit board 501 of the semiconductor circuit device of the present embodiment is supplied with a metal base 7, an insulating layer 8 provided on the surface thereof, and a high-frequency current provided on the surface of the insulating layer 8. In addition, the wiring conductor 50 having a rectangular cross section perpendicular to the energization direction, the insulating member 56 provided to cover the side surface and the upper surface of the wiring conductor 50, and the conductive member 57 provided on the surface of the insulating member 56 And. The conductive member 57 is used as a wiring circuit, and can pass a high-frequency current having a phase different from that of the wiring conductor 50.
In the present embodiment, since the upper surface and both side surfaces of the wiring conductor 50 are close to the conductive member 57, the area of the upper surface skin vicinity energization path 50k generated on the upper surface of the wiring conductor 50 and the side surface surface vicinity generated on both side surfaces. The area of the current path 50m increases, and the current resistance of the wiring conductor 50 decreases.
In addition, the area of the inner skin near-surface conduction path 50 i generated on the inner surface of the conductive member 57 is increased, and the conduction resistance of the conductive member 57 is also decreased.

Further, since the bottom surface of the wiring conductor 50 is close to the metal substrate 7, a bottom skin vicinity conducting path 50n is generated in this portion. However, due to the proximity effect, since the current flowing through the upper surface and the side skin vicinity conducting paths 50k, 50m is large, the current flowing through the bottom skin vicinity conducting path 50n is reduced, and the eddy current generated in the eddy current generating portion 50f of the metal substrate 7 is reduced. Becomes smaller.
The semiconductor circuit device of the present embodiment has a large area near the skin of the wiring conductor through which high-frequency current flows, a low energization resistance, a small eddy current generated in the metal substrate, and heat generation from the circuit board is suppressed. Therefore, the current capacity can be increased and the reliability is excellent.
In the present embodiment, the conductive member 57 has a structure in which a high-frequency current having a phase different from that of the wiring conductor 50 can flow. The conductive member 57 is a wiring conductor, but the conductive member 57 is independent of the wiring circuit. Also good. Although the effect is smaller than when the conductive member 57 is a wiring circuit, even in this case, due to the proximity effect, the areas of the upper and side skin vicinity energization paths 50k and 50m increase, and the energization resistance decreases.

Embodiment 6 FIG.
FIG. 11 is a schematic cross-sectional view of a wiring conductor portion in a circuit board of a semiconductor circuit device according to Embodiment 6 of the present invention. The cross section of the wiring conductor portion shown here is a cross section perpendicular to the energization direction.
As shown in FIG. 11, the circuit board 601 of the semiconductor circuit device of the present embodiment includes a metal base 7, an insulating layer 8 provided on the surface thereof, and a plurality of thin plate shapes provided on the surface of the insulating layer 8. Wiring conductor 60 and an insulating member 66 provided between the thin wiring conductors 60.
In the present embodiment, between the flat portion of the first thin plate-like wiring conductor 60a and the flat portion of the second thin plate-like wiring conductor 60b, and the flat portion of the second thin plate-like wiring conductor 60b, An insulating member 66 is provided between the flat portion of the third thin plate-like wiring conductor 60c. High-frequency currents having different phases can be passed through the thin wiring conductors 60a, 60b, and 60c.
In the present embodiment, the height of the thin plate-like wiring conductors 60a, 60b, 60c is higher than the width W of the portion (referred to as the bottom portion of the wiring conductor) facing the metal substrate 7 through the insulating layer 8. Since H is sufficiently large, due to the proximity effect, the area of the near-skinned energization path generated on the surface facing each adjacent thin plate-like wiring conductor in the plane portion of each thin-plate-like wiring conductor becomes particularly large, and the conduction resistance is reduced. The effect of reducing is high.
Further, since the width W of the bottom surface portion of each thin wiring conductor 60a, 60b, 60c is small, the eddy current generated in the metal substrate 7 is also small.

In this embodiment, the first to third three wiring conductors and the two insulating members 66 are provided, but the first thin plate-like wiring conductor 60a and the second thin plate-like wiring conductor 60b are provided. Alternatively, a configuration with an insulating member 66 provided between the thin wiring conductors may be used.
In the present embodiment, the first to third wiring conductors that flow high-frequency currents having different phases are provided. Any one of them is independent from the wiring circuit, and the high-frequency current does not flow. It is good also as a member.
A sandwich structure of a thin plate-like wiring conductor 60 and an insulating member 66 is manufactured by laminating a plate-like or foil-like wiring conductor and an insulating member and integrating them with a pressure press, or bonding each layer. To do. Further, a plate-shaped or foil-shaped wiring conductor formed in advance on the insulating member surface may be manufactured by laminating and bonding. Alternatively, the insulating member surface may be manufactured by laminating and bonding a film-shaped wiring conductor formed by a film forming process such as plating.
The semiconductor circuit device of the present embodiment has a particularly large area near the skin of the wiring conductor through which a high-frequency current flows, a low current resistance, a small eddy current generated in the metal substrate, and heat generation from the circuit board is suppressed. Therefore, the current capacity can be increased and the reliability is excellent.

  Since the semiconductor circuit device according to the present invention can suppress heat generation from a circuit through which a high-frequency current flows, it can be effectively used for electrical equipment that requires high current and high reliability.

1 is a circuit diagram of a semiconductor circuit device according to a first embodiment of the present invention. It is a perspective schematic diagram which shows one Example of the circuit board carrying the switching element in the semiconductor circuit device based on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the model circuit board used for explaining the effect of the semiconductor circuit device according to the first embodiment of the present invention. It is a figure which shows the relationship between the distance between wiring conductors in the model circuit board used in order to demonstrate the effect of the semiconductor circuit device which concerns on Embodiment 1 of this invention, and energization resistance. It is a cross-sectional schematic diagram of the output side wiring conductor part in the circuit board of the semiconductor circuit device which concerns on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the output side wiring conductor part in which the insulating member in the circuit board of the semiconductor circuit device concerning Embodiment 1 of this invention was provided. It is a cross-sectional schematic diagram of the output side wiring conductor part in the circuit board of the semiconductor circuit device which concerns on Embodiment 2 of this invention. It is a cross-sectional schematic diagram of the wiring conductor part in the circuit board of the semiconductor circuit device which concerns on Embodiment 3 of this invention. It is a cross-sectional schematic diagram of the wiring conductor part in the circuit board of the semiconductor circuit device concerning Embodiment 4 of this invention. It is a cross-sectional schematic diagram of the wiring conductor part in the circuit board of the semiconductor circuit device which concerns on Embodiment 5 of this invention. It is a cross-sectional schematic diagram of the wiring conductor part in the circuit board of the semiconductor circuit device concerning Embodiment 6 of this invention. It is a cross-sectional schematic diagram of the wiring conductor part in the circuit board of the conventional semiconductor circuit device.

1 switching element, 1a output terminal, 1b gate terminal, 3 power supply,
4 capacitor, 5 harness, 6 terminal block, 7,77 metal base, 8,78 insulating layer,
10, 40, 50, 60, 70 wiring conductor, 10a first wiring conductor,
10b Second wiring conductor, 10m near-surface energization path, 11 lead terminal,
12 input side wiring conductor, 13 output side wiring conductor, 14 control side wiring conductor,
13a 1st output side wiring conductor, 13b 2nd output side wiring conductor,
13c 3rd output side wiring conductor, 13ab 1st one side wall part,
13ba second side wall portion, 13bc second side wall portion,
13cb third one side wall, 13ad first bottom, 13bd second bottom,
13cd 3rd bottom part, 13f, 30f, 40f, 50f, 70f Eddy current generation part,
13n, 30n, 40n, 47n, 50n, 70n Bottom surface skin vicinity energization path,
13m, 30m, 50m side surface near the current path,
15, 16, 36, 46, 56, 66 insulating member, 20 wiring board,
20a, 20b, 20c metal pattern, 30a first L-shaped wiring conductor,
30b Second L-shaped wiring conductor, 30ab Side wall portion of the first L-shaped wiring conductor,
30ba Side wall portion of the second L-shaped wiring conductor, 30ad Bottom portion of the first L-shaped wiring conductor,
30bd bottom of second L-shaped wiring conductor, 40k, 50k upper surface near-surface energization path,
47,57 conductive member, 50i inner surface near-surface conduction path,
60a first thin plate-like wiring conductor, 60b second thin plate-like wiring conductor,
60c Third thin plate-like wiring conductor,
101, 101a, 201, 301, 401, 501, 601 circuit board,
100 Semiconductor circuit device, 102 Model circuit board, 701 Insulating board.

Claims (4)

  A semiconductor circuit device comprising a circuit board formed of a metal substrate, an insulating layer provided on the surface of the metal substrate, and a wiring conductor provided on the surface of the insulating layer and mounting a switching element. The wiring conductor is formed of a plurality of input-side wiring conductors, a plurality of output-side wiring conductors that are supplied with a high-frequency current and have a bottom surface portion and a side wall portion, and a plurality of control-side wiring conductors, A semiconductor circuit device in which side walls of adjacent output-side wiring conductors in a plurality of output-side wiring conductors are arranged close to each other in parallel.   2. The semiconductor circuit device according to claim 1, wherein side wall portions of adjacent output side wiring conductors are in contact with each other through an insulating member.   3. The semiconductor circuit device according to claim 1, wherein a cross section of the output side wiring conductor is U-shaped.   The wiring conductor is bonded to the metal pattern of the wiring board comprising a metal substrate, an insulating layer provided on the surface of the metal substrate, and a metal pattern provided on the surface of the insulating layer. The semiconductor circuit device according to any one of claims 1 to 3.

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