JP4987917B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP4987917B2 JP4987917B2 JP2009190309A JP2009190309A JP4987917B2 JP 4987917 B2 JP4987917 B2 JP 4987917B2 JP 2009190309 A JP2009190309 A JP 2009190309A JP 2009190309 A JP2009190309 A JP 2009190309A JP 4987917 B2 JP4987917 B2 JP 4987917B2
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- 238000003384 imaging method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 238000002955 isolation Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 96
- 238000009792 diffusion process Methods 0.000 description 17
- 230000003321 amplification Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図1乃至図7を用いて、本発明の一実施形態に係わるMOS型固体撮像装置の構成例について説明する。本実施形態では、受光面が信号走査回路部の形成される半導体基板表面と反対側の半導体基板の裏面側に設けられる、裏面照射型の固体撮像装置を一例に挙げて説明する。
次に、上記図6を用いて、本実施形態の固体撮像装置の光学的作用効果について説明する。上記において説明したように、本実施形態の固体撮像装置は、Si層13内に、隣接する単位画素130との境界部分を囲むように画素分離領域を区画する画素分離絶縁膜15が設けられている。このような構成とすることで、次のような光学的作用効果が得られる。
図8乃至図12に、図6の構造を得るための製造工程断面図を示した。この例においては、Si基板は結晶Siの上にSiO2 からなる絶縁膜とその上に設けられた所謂SOI(Silicon on Insulator)構造のSiの例について示した。
本実施形態の固体撮像装置及びその製造方法によれば、次のような効果が得られる。
なお、本発明は上述した実施形態に限定されるものではない。実施形態では、第1のSi層を形成するためにSOI基板を用いたが、必ずしもSOI基板を用いる必要はなく、Si層の下地として何らかの補助基板を用いればよい。例えば、Si基板を補助基板に接着した後に、Si基板を薄くすることにより第1のSi層を形成するようにしても良い。この場合、補助基板上に第1のSi層が形成されたものとなり、先の実施形態と同様に各種の工程を行い、最終的に補助基板を削除すればよい。
11,31…Si基板
12,32…埋め込み絶縁膜
13…第1のSi層
14…溝
15…画素分離絶縁膜
16,36,39,51,61…絶縁膜
21…ゲート電極
22,23…n型拡散層
33…第2のSi層
37,38…貫通ビア
50…配線層
52…金属配線
60…支持基板
61…Si窒化膜
62…色フィルタ
63…マイクロレンズ
100…固体撮像装置
110…撮像領域
120…駆動回路領域
121…負荷トランジスタ
122…CDS雑音除去回路
123…出力端子
124…電源端子
130…単位画素
131…フォトダイオード
132…読み出しトランジスタ
133…増幅トランジスタ
134…アドレストランジスタ
135…リセットトランジスタ
136…浮遊拡散層
140…垂直シフトレジスタ
150…AD変換回路
Claims (4)
- 第1の半導体層内に、光電変換により信号電荷を生成する光電変換部と、該光電変換部を画素単位で囲む絶縁膜からなる画素分離領域とを形成し、前記第1の半導体層の表面部に前記光電変換部で生成された信号電荷を読み出す読み出しトランジスタを形成する工程と、
前記第1の半導体層の表面上に絶縁膜を介して第2の半導体層を積層する工程と、
前記第2の半導体層の前記第1の半導体層と反対側の表面部に前記読み出しトランジスタで読み出された信号を処理する信号走査回路を形成する工程と、
前記第2の半導体層を貫通して前記読み出しトランジスタと前記信号走査回路とを接続するための貫通電極を形成する工程と、
を含むことを特徴とする固体撮像装置の製造方法。 - 補助基板上に形成された第1のシリコン層の表面上に画素分離パターンのマスクを形成する工程と、
前記マスクを用いて前記シリコン層を選択的にエッチングし、光電変換により信号電荷を生成する光電変換部を画素単位で囲む画素分離領域の溝を形成する工程と、
前記溝内にシリコンよりも屈折率の低い絶縁膜を埋め込み形成する工程と、
前記シリコン層の表面部に前記光電変換部で生成された信号電荷を読み出す読み出しトランジスタを形成する工程と、
前記光電変換部,画素分離領域,及び読み出しトランジスタが形成された前記シリコン層の表面上に絶縁膜を介して第2のシリコン層を形成する工程と、
前記第2のシリコン層の表面部に、前記読み出しトランジスタで読み出された信号を処理する信号走査回路を形成する工程と、
前記信号走査回路が形成された前記第2のシリコン層の表面上に支持基板を接着する工程と、
前記支持基板の接着後に、前記第1のシリコン層から前記補助基板を剥離する工程と、
を含むことを特徴とする固体撮像装置の製造方法。 - 前記補助基板はシリコン基板上に埋め込み絶縁層を形成したものであり、前記第1のシリコン層は、前記埋め込み絶縁層上に形成されてSOI基板を構成していることを特徴とする請求項2記載の固体撮像装置の製造方法。
- 前記第2のシリコン層を形成する工程として、シリコン基板上に埋め込み絶縁層を介して第2のシリコン層を形成したSOI基板を用意し、該SOI基板のシリコン層を前記第1のシリコン層の表面上に前記絶縁膜を介して接着した後、前記シリコン基板及び埋め込み絶縁層を前記第2のシリコン層から剥離することを特徴とする請求項2記載の固体撮像装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009190309A JP4987917B2 (ja) | 2009-08-19 | 2009-08-19 | 固体撮像装置の製造方法 |
TW099122473A TWI419315B (zh) | 2009-08-19 | 2010-07-08 | 固態攝像裝置及其製造方法 |
US12/852,782 US20110042552A1 (en) | 2009-08-19 | 2010-08-09 | Solid-state imaging device and method of manufacturing the same |
CN201010261175.XA CN101998070B (zh) | 2009-08-19 | 2010-08-19 | 固体摄像装置及其制造方法 |
Applications Claiming Priority (1)
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JP2009190309A JP4987917B2 (ja) | 2009-08-19 | 2009-08-19 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011044489A JP2011044489A (ja) | 2011-03-03 |
JP4987917B2 true JP4987917B2 (ja) | 2012-08-01 |
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JP2009190309A Expired - Fee Related JP4987917B2 (ja) | 2009-08-19 | 2009-08-19 | 固体撮像装置の製造方法 |
Country Status (4)
Country | Link |
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US (1) | US20110042552A1 (ja) |
JP (1) | JP4987917B2 (ja) |
CN (1) | CN101998070B (ja) |
TW (1) | TWI419315B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101861650B1 (ko) | 2011-10-17 | 2018-05-29 | 삼성전자주식회사 | 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법 |
US11398515B2 (en) | 2016-04-25 | 2022-07-26 | Sony Corporation | Solid-state imaging element, method for manufacturing the same, and electronic apparatus |
Families Citing this family (22)
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JP2009206356A (ja) | 2008-02-28 | 2009-09-10 | Toshiba Corp | 固体撮像装置およびその製造方法 |
US8742309B2 (en) | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
US10015471B2 (en) * | 2011-08-12 | 2018-07-03 | Semiconductor Components Industries, Llc | Asymmetric angular response pixels for single sensor stereo |
JP2013157422A (ja) * | 2012-01-30 | 2013-08-15 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
US9554115B2 (en) * | 2012-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Imaging pixels with depth sensing capabilities |
US8933527B2 (en) * | 2012-07-31 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Elevated photodiodes with crosstalk isolation |
US8773562B1 (en) * | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
JP2015032687A (ja) * | 2013-08-02 | 2015-02-16 | ソニー株式会社 | 撮像素子、電子機器、および撮像素子の製造方法 |
JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
WO2016035184A1 (ja) * | 2014-09-04 | 2016-03-10 | オリンパス株式会社 | 固体撮像装置 |
US9942492B2 (en) * | 2016-06-16 | 2018-04-10 | Semiconductor Components Industries, Llc | Image sensors having high dynamic range functionalities |
DE102018106270A1 (de) | 2017-09-28 | 2019-03-28 | Taiwan Semiconductor Manufacturing Co. Ltd. | Bildsensor mit einer oberflächenstruktur mit verbesserter quantenausbeute |
US10644060B2 (en) * | 2017-09-28 | 2020-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with high quantum efficiency surface structure |
WO2019130702A1 (ja) | 2017-12-27 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP2019134074A (ja) * | 2018-01-31 | 2019-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び半導体装置の製造方法 |
JP7277106B2 (ja) * | 2018-10-25 | 2023-05-18 | ソニーグループ株式会社 | 固体撮像装置及び撮像装置 |
KR102716764B1 (ko) * | 2018-11-06 | 2024-10-15 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자 및 전자 기기 |
US12119359B2 (en) | 2018-12-20 | 2024-10-15 | Sony Semiconductor Solutions Corporation | Imaging device |
US20220077215A1 (en) * | 2018-12-26 | 2022-03-10 | Sony Semiconductor Solutions Corporation | Photoelectric conversion element, solid-state imaging apparatus, and electronic device |
US11240449B2 (en) * | 2019-09-18 | 2022-02-01 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions |
JP2021114593A (ja) * | 2020-01-21 | 2021-08-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
JP2020102656A (ja) * | 2020-04-06 | 2020-07-02 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
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KR100782463B1 (ko) * | 2005-04-13 | 2007-12-05 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
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2009
- 2009-08-19 JP JP2009190309A patent/JP4987917B2/ja not_active Expired - Fee Related
-
2010
- 2010-07-08 TW TW099122473A patent/TWI419315B/zh not_active IP Right Cessation
- 2010-08-09 US US12/852,782 patent/US20110042552A1/en not_active Abandoned
- 2010-08-19 CN CN201010261175.XA patent/CN101998070B/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101861650B1 (ko) | 2011-10-17 | 2018-05-29 | 삼성전자주식회사 | 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법 |
US11398515B2 (en) | 2016-04-25 | 2022-07-26 | Sony Corporation | Solid-state imaging element, method for manufacturing the same, and electronic apparatus |
US11948958B2 (en) | 2016-04-25 | 2024-04-02 | Sony Group Corporation | Solid-state imaging element, method for manufacturing the same, and electronic apparatus |
Also Published As
Publication number | Publication date |
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US20110042552A1 (en) | 2011-02-24 |
TWI419315B (zh) | 2013-12-11 |
CN101998070B (zh) | 2014-04-23 |
JP2011044489A (ja) | 2011-03-03 |
CN101998070A (zh) | 2011-03-30 |
TW201133807A (en) | 2011-10-01 |
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