JP4956899B2 - Method for manufacturing thin film piezoelectric element - Google Patents

Description

  The present invention relates to a method for manufacturing a thin film piezoelectric element and a method for transferring a thin film piezoelectric element.

  In recent years, with the reduction in size and thickness of various electronic devices, there has been an increasing demand for the reduction in size and thickness of electronic components used therein. As means for meeting this demand, proposals have been made to replace an electronic component that has been conventionally made of a ceramic sintered body with a thin-film electronic component.

  One example is a piezoelectric actuator component, and it is considered to use a thin film piezoelectric element manufactured by a thin film method instead of a piezoelectric element manufactured by a sintered body having a large volume. For example, a proposal has been made to use a thin film piezoelectric element for fine position control of a magnetic head of a hard disk (see, for example, Patent Document 1).

  Piezoelectric actuators that use thin-film piezoelectric elements reduce the volume occupied by components, resulting in the direct effect of reducing the size of the equipment. There is also an advantage that control at a higher frequency becomes possible by increasing the resonance frequency.

  In the manufacture of a thin film piezoelectric element, a step of finally removing a film formation substrate for forming a thin film constituting the element may be required. As a means for that, a method of removing the film-forming substrate by etching is common (see, for example, Patent Document 2).

  This is because by removing the film formation substrate, the area that has been removed is less likely to prevent expansion and contraction of the piezoelectric body, so that the piezoelectricity can be used more efficiently. However, if the deposition substrate is removed by etching, it is naturally impossible to reuse the substrate. In many cases, an expensive film-forming substrate must be used to obtain the film quality required for the piezoelectric thin film, and a new film-forming substrate is required for each production. For this reason, the thin film piezoelectric element to be manufactured becomes expensive as a result of including the cost of the film formation substrate.

  As a technique for separating a film formation substrate and a thin film without removing the film formation substrate by etching or the like, a method of irradiating laser light having the same cross-sectional shape as the thin film shape to be separated has been proposed (for example, And Patent Document 3).

  This method will be described with reference to FIGS. In FIG. 23, a sacrificial layer thin film 2 made of an organic material and a transfer layer 14 are formed in this order on a light-transmitting film-forming substrate 1, and a laser beam 7 is irradiated from the back surface of the film-forming substrate 1. To do. Then, the sacrificial layer thin film 2 absorbs the laser light 7 and enters a high pressure state. As a result, as shown in FIG. 24, the layer 14 to be transferred is emitted in the region irradiated with the laser beam 7 and bonded and transferred by the impact of the collision with the transfer substrate 12 arranged in the vicinity in advance. The In this way, it is possible to transfer only a necessary portion of the transferred layer 14 to the transfer substrate 12.

  Further, a laser peeling technique for a thin film piezoelectric element has been proposed (see, for example, Patent Document 4). This method will be described with reference to FIG.

  First, the sacrificial layer thin film 2, the first metal thin film 3, the piezoelectric thin film 4, and the diaphragm 16 are formed on the film-forming substrate 1 having translucency. Subsequently, the diaphragm 16 is fixed to the transfer substrate 12 with the resin 6. In this state, the surface of the sacrificial layer thin film 2 is caused to peel by irradiating the laser beam 7 from the back surface of the film-forming substrate 1 having translucency. Thereby, the film-forming substrate 1 having translucency and the first metal thin film 3, the piezoelectric thin film 4 and the diaphragm 16 formed on the sacrificial layer thin film 2 are separated.

  As an irradiation method of the laser beam 7 for peeling off such a thin film, a method of performing irradiation a plurality of times while providing an overlapping region while shifting the irradiation region is known (see, for example, Patent Document 5). ).

This method will be described with reference to FIGS. FIG. 26 is a top view showing a state in which the piezoelectric element pattern 10 is formed on the surface of the film formation substrate 1. The piezoelectric element pattern 10 is irradiated with a laser beam 7 having an area surrounded by a broken line. Then, as shown in FIG. 27, peeling occurs in a part 15 of the piezoelectric element pattern 10. Subsequently, the laser beam 7 is irradiated again with the position shifted. By repeating this irradiation a plurality of times, the entire piezoelectric element pattern 10 is peeled off upon receiving the laser beam 7.
JP 2002-279742 A JP 2002-134807 A US Pat. No. 4,987,006 JP 2003-17780 A JP-A-10-125929 (see Example 1)

  When the technique for removing a film formation substrate by etching as described in Patent Document 2 is used, there is a problem that material costs increase because the film formation substrate cannot be reused.

  In addition, as described in Patent Document 3 and the like, there is a problem shown below in the case where the film formation substrate is peeled off using laser light without being etched away.

  For example, as in the method of Patent Document 3, a laser beam is selectively irradiated to the shape to which the transfer layer is to be transferred, and the transferred transfer layer is bonded to the transfer substrate by impact and transferred. Since the piezoelectric thin film is torn at the boundary between the portion irradiated with light and the portion not irradiated, a crack occurs at this time. Further, a laser beam having a strong energy density is necessary for sufficient tearing and collision, but this causes alteration of the piezoelectric thin film. In particular, in a lead-based piezoelectric thin film typified by lead zirconate titanate (PZT), the lead (Pb) component is likely to evaporate and the piezoelectric characteristics are likely to deteriorate.

  Further, in the method of transferring a thin film piezoelectric element from a film formation substrate to a transfer substrate, for example, as in the method of Patent Document 4, transfer is performed in a region sandwiched between two substrates, a film formation substrate and a transfer substrate. For this purpose, a laser beam with a high energy density is required. This is presumably because, in the region sandwiched between the two substrates, the sacrificial layer thin film portion is prevented from expanding even if it absorbs the laser beam. Therefore, it is necessary to irradiate a laser beam with a high energy density in order to peel off the whole, and this easily causes the piezoelectric thin film to be altered. Furthermore, when a region sandwiched between two substrates and a region that is not so are mixed, cracks are likely to occur at the boundary between the two regions. This is presumed that since the ease of peeling differs between the two regions, there is a difference in the peeling timing, which adds a force to tear the piezoelectric thin film.

  Further, in the method of irradiating the entire pattern by repeatedly irradiating the laser beam while providing the overlapping irradiation region in the laser beam irradiation, for example, as in the method of Patent Document 5, the piezoelectric portion of the overlapping irradiation portion Quality changes and cracks are likely to occur at the boundary of the beam shape of the incident laser beam. This is due to the accumulation of damage to the piezoelectric body due to overlapping irradiation, and because the peeled and unpeeled parts in the pattern coexist, the force concentrates on the boundary part and tearing easily occurs. It is guessed.

  An object of the present invention is to solve these conventional problems and to manufacture a thin film piezoelectric element having high piezoelectricity and high reliability at low cost.

In order to solve the above problems, a method for manufacturing a thin film piezoelectric element of the present invention includes a sacrificial layer thin film, a first metal thin film, a piezoelectric thin film, and a first thin film on one surface of a film-forming substrate having translucency. Forming a multilayer film having two metal thin films, and processing the multilayer film to form a piezoelectric element pattern comprising a first metal thin film, a piezoelectric thin film, and a second metal thin film on the sacrificial layer thin film; Irradiating the sacrificial layer thin film with laser light having an irradiation area including the piezoelectric element pattern from the other surface side of the film-forming substrate to cause a peeling reaction at the sacrificial layer thin film, thereby forming the piezoelectric element pattern possess a step of peeling from the top of the deposition substrate, the sacrificial layer is Ru method der an oxide thin film containing lead.

  By this method, immediately after laser irradiation, any part of the piezoelectric thin film can be peeled off without being restricted not only by the substrate for film formation but also by other substrates. The entire piezoelectric element pattern can be reliably and simultaneously peeled off by laser light. For this reason, it is possible to prevent the piezoelectric thin film from being deteriorated and the piezoelectricity from being deteriorated, or cracks from being generated to reduce the reliability.

  Further, in the above method, the laser beam may be irradiated only for one shot. As described above, since one piezoelectric element pattern is peeled off by irradiation with only one shot of laser light, the piezoelectric thin film is not subjected to overlapping irradiation of laser light, so that it may be altered or cracked. Can be prevented.

In the above method , the second metal thin film comprises at least one selected from the elements of platinum (Pt), palladium (Pd), gold (Au), copper (Cu), aluminum (Al), and silver (Ag). You may contain as the component. Moreover, it is desirable that the crystal of the piezoelectric thin film is preferentially oriented in the polarization axis direction. In this case, the piezoelectric thin film may have a tetragonal perovskite crystal structure mainly composed of lead zirconate titanate (PZT) and may be (001) -oriented. Further, the deposition substrate is preferably a single crystal magnesia (MgO) substrate having a crystal plane of (001).

  The first metal thin film may be platinum (Pt) crystallized at (001). Furthermore, it is desirable that the thickness of the piezoelectric thin film is greater than 1 μm and less than 10 μm, and the thickness of the first metal thin film and the second metal thin film is greater than 10 nm and less than 500 nm.

  In the above method, when the laminated film is processed to form the piezoelectric element pattern, the outer peripheral region of the piezoelectric element pattern may be in a state where the film formation substrate is exposed. Alternatively, the sacrificial layer thin film may be exposed in the outer peripheral region of the piezoelectric element pattern when the laminated film is processed to form the piezoelectric element pattern.

  Further, in the above method, the thin film piezoelectric element may be an actuator. Alternatively, the thin film piezoelectric element may be a vibration sensor.

Further, it may be a hard disk drive whose head position is controlled by an actuator manufactured by the above manufacturing method .

According to the manufacturing how the thin film piezoelectric element of the present invention has high piezoelectricity, a highly reliable thin-film piezoelectric element, inexpensively manufactured, and may be incorporated into a device that uses it.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same code | symbol is attached | subjected about the same element and description may be abbreviate | omitted. Further, in the following drawings, pattern shapes are schematically shown, and the thickness and shape of each thin film are described so as to be easily understood.

(First embodiment)
FIG. 1 is a cross-sectional view schematically showing a laser light irradiation step in the method of manufacturing a thin film piezoelectric element according to the first embodiment of the present invention. In FIG. 1, a light-transmitting film-forming substrate 1 is formed with a laminated structure comprising a sacrificial layer thin film 2, a first metal thin film 3, a piezoelectric thin film 4, a second metal thin film 5 and a resin 6. The piezoelectric element pattern 10 is formed through a photolithography process and an etching process. In the present embodiment, the piezoelectric element pattern 10 includes the first metal thin film 3, the piezoelectric thin film 4, and the second metal thin film 5, and the sacrificial layer thin film 2 and the resin 6 are processed into the same shape.

  Finally, the piezoelectric element pattern 10 is separated from the film forming substrate 1 and used as a thin film piezoelectric element. The components that actually function as a thin film piezoelectric element are the first metal thin film 3, the second metal thin film 5, and the piezoelectric thin film 4 sandwiched between them. That is, if a voltage is applied between the first metal thin film 3 and the second metal thin film 5, the piezoelectric thin film 4 can be expanded and contracted to be used as an actuator. Moreover, if a voltmeter is connected instead of applying a voltage, it can be used as a sensor for detecting a vibration state. The thin film piezoelectric element that is actually used has various pattern shapes and configurations for electrical connection with the outside. However, since these can be manufactured by conventional techniques, description thereof will be omitted.

  Laser light 7 is incident through the film-forming substrate 1 having translucency in the direction of the piezoelectric element pattern 10 described above. Then, since the laser beam 7 is absorbed by the sacrificial layer thin film 2 in the region where the piezoelectric element pattern 10 is provided, a light shielding region 8 where the laser beam 7 does not transmit is generated. In addition, a transmission region 9 through which the laser light 7 is transmitted is generated around the periphery.

  FIG. 2 is a schematic plan view of the state when the laser beam 7 is irradiated as viewed from the piezoelectric element pattern 10 side. In FIG. 2, a piezoelectric element pattern 10 is formed on the film formation substrate 1. Laser light 7 having an irradiation area larger than the piezoelectric element pattern 10 and reliably including the piezoelectric element pattern 10 is irradiated to each piezoelectric element pattern 10 by one shot. For example, FIG. 2 shows a case where there are six piezoelectric element patterns 10, but in this case, each piezoelectric element pattern 10 is irradiated with one shot. Therefore, finally, six thin film piezoelectric elements are manufactured.

  In addition, as shown in FIG. 3, you may irradiate only one shot of the laser beam 7 of the irradiation area containing the plurality (two in FIG. 3) of piezoelectric element patterns 10.

  As described above, when one shot of laser light having an irradiation area including the piezoelectric element pattern 10 is irradiated, a peeling reaction occurs in the sacrificial layer thin film 2 including the lower region of the piezoelectric element pattern 10. For this reason, since the entire surface of the piezoelectric element pattern 10 is uniformly peeled, no external force that causes stress or tearing is applied to the piezoelectric thin film 4. As a result, separation can be performed without causing characteristic deterioration. The same applies to the method for manufacturing the thin film piezoelectric element and the transfer method.

  FIG. 4 is a diagram schematically showing a cross-sectional state immediately after the laser beam 7 is irradiated. As a result of the sacrificial layer thin film 2 absorbing the laser light 7, a peeling reaction occurs inside the sacrificial layer thin film 2, and the piezoelectric element pattern 10 is separated from the film-forming substrate 1 having translucency. In this case, since the resin 6 holds the piezoelectric element pattern 10 with appropriate elasticity, it is possible to prevent cracks from occurring in the piezoelectric thin film 4 and the like during peeling or subsequent work. In the state of FIG. 4, since the thin film piezoelectric element is completely separated from the film forming substrate 1, it is particularly useful to provide this resin 6 when it is desired to prevent cracks from occurring during subsequent operations. is there. The separated film formation substrate 1 can be reused by polishing or cleaning as necessary.

  Here, the desirable material of each part is demonstrated.

  As the film-forming substrate 1 having a light-transmitting property, a magnesia substrate, a sapphire substrate, a glass substrate, or the like is preferably used.

  The sacrificial layer thin film 2 is preferably an inorganic material, not an organic material. This is because, in many cases, the piezoelectric thin film 4 cannot obtain sufficient piezoelectric characteristics unless it undergoes a high temperature process, and when the sacrificial layer thin film 2 is an organic substance, it cannot withstand this high temperature process. is there. For example, in the case of lead zirconate titanate (PZT), which is a typical piezoelectric body, the crystal structure cannot be changed to a perovskite structure unless it is subjected to a process of about 500 ° C. or higher, which is necessary for a thin film piezoelectric element. A piezoelectric effect cannot be obtained. Therefore, the sacrificial layer thin film 2 is not preferably a substance that melts and evaporates at a temperature of about 500 ° C. On the other hand, when the temperature is raised to about 1000 ° C. by laser light irradiation, at least a part of the components needs to generate a reaction such as evaporation and decomposition to cause a peeling reaction. As a result of investigation by the present inventors, it has been found that an oxide thin film containing lead (Pb) is desirable. Furthermore, it has also been found that an oxide thin film having a perovskite structure is more preferable. This is because the oxide thin film containing lead (Pb) does not undergo significant alteration at a temperature necessary for forming the piezoelectric thin film 4, for example, about 500 ° C., but instantaneously receives 1000 ° C. upon receiving laser irradiation. This is because part of the lead (Pb) component evaporates and a peeling reaction occurs when the degree is reached. Further, the perovskite structure is preferable, and the lattice constant matching when forming, for example, platinum (Pt) as the first metal thin film 3 and lead zirconate titanate (PZT) as the piezoelectric thin film 4 on the upper part is preferable. This is because the piezoelectric thin film 4 having a high crystal orientation and a controlled crystal orientation can be formed.

  The first metal thin film 3 is difficult to be oxidized during the manufacturing process, and in terms of lattice constant consistency with lead zirconate titanate (PZT), which is a typical piezoelectric thin film 4, is precious metal, particularly platinum (Pt ) Is desirable.

  As the piezoelectric thin film 4, a material having high piezoelectricity is desirable. As the crystal structure, the piezoelectric performance can be enhanced by crystal orientation so that the polarization direction coincides with the film thickness direction. For example, in the case of using lead zirconate titanate (PZT), when the crystal structure is a tetragonal system, the polarization axis is in the (001) direction, so it is desirable to have (001) orientation. On the other hand, in the rhombohedral system, since the polarization axis is in the (111) direction, (111) orientation is desirable.

  In order to obtain a tetragonal system, a (001) -oriented magnesium oxide (MgO) single crystal substrate is used as the film-forming substrate 1, and the lead (Pb) -based perovskite oxide is used as the sacrificial layer thin film 2. The first metal thin film 3 can be obtained by using platinum (Pt) oriented in the (100) direction.

  In order to obtain rhombohedral lead zirconate titanate (PZT), a (111) -oriented magnesium oxide (MgO) single crystal substrate is used as the film-forming substrate 1, and the aforementioned lead is used as the sacrificial layer thin film 2. A (Pb) -based perovskite oxide can be obtained by using platinum (Pt) oriented in the (111) direction as the first metal thin film 3.

  The material of the second metal thin film 5 is not particularly limited, and may be selected from general electrode thin film materials such as platinum (Pt) and gold (Au).

  The material of the resin 6 is preferably polyimide or the like having high heat resistance because it is necessary to withstand a high temperature state at the time of laser light irradiation.

  The wavelength of the laser light is selected according to the material. The wavelength is effectively selected for the film formation substrate 1 and the sacrificial layer thin film 2 is effectively absorbed. For example, when the film-forming substrate 1 having translucency is magnesium oxide (MgO), the wavelength of a KrF laser or a XeCl laser can be used.

The energy density of the laser beam requires a sufficiently high energy for peeling, but if it is too high, the piezoelectric thin film 4 is damaged. As a result of examination by the present inventors, peeling was often insufficient at a strength of 0.4 J / cm ² or less, and damage to the piezoelectric thin film 4 was often found at 0.9 J / cm ² or more. . Therefore, a strength of 0.4 to 0.9 J / cm ² is desirable.

  In this embodiment mode, the laser beam irradiation is performed only for one shot. However, the irradiation may be performed a plurality of times as long as the irradiation area includes the piezoelectric element. The same applies to the method for manufacturing the thin film piezoelectric element and the transfer method.

(Second Embodiment)
FIG. 5 is a cross-sectional view schematically showing a laser light irradiation step in the method of manufacturing a thin film piezoelectric element according to the second embodiment of the present invention. The configuration different from the first embodiment is only that the sacrificial layer thin film 2 is not patterned. In this embodiment, no resin is provided.

  FIG. 6 is a cross-sectional view immediately after the irradiation of the laser beam 7. The difference from the first embodiment is that dust 11 of the sacrificial layer thin film 2 is generated around the separated thin film piezoelectric element. is there. Although the sacrificial layer thin film 2 in the region where the piezoelectric element pattern does not exist in FIG. 5 is not held by the piezoelectric element pattern, which is a cause of dusting, the integrity is maintained when subjected to an impact when peeling occurs. It is presumed that this is not possible. In the present embodiment, the piezoelectric element pattern is a laminated film composed of the first metal thin film 3, the piezoelectric thin film 4, and the second metal thin film 5.

  The generation of dust is not desirable when manufacturing a thin film piezoelectric element that extremely dislikes dust 11, and in that case, it is desirable to use the manufacturing method of the first embodiment. On the other hand, in the present embodiment, when the piezoelectric element pattern is formed by etching, the etching is stopped with the sacrificial layer thin film 2 exposed, so that the deposition substrate 1 is etched by overetching. There is nothing. Therefore, when the film-forming substrate 1 is reused, there is an advantage that the re-polishing process can be omitted or minimized.

(The first reference example)
FIG. 7 is a cross-sectional view schematically showing a laser light irradiation step in the thin film piezoelectric element transfer method according to the first reference example . The difference from FIG. 1 for explaining the manufacturing method of the first embodiment is that the resin 6 is not provided and that the surface of the second metal thin film 5 is opposed to the transfer substrate 12 in the vicinity thereof. It is to irradiate a laser beam after arranging.

  8 is a cross-sectional view of a state immediately after the laser beam shown in FIG. 7 is irradiated. Immediately before being transferred to the transfer substrate 12, as shown in FIG. 8, the thin film piezoelectric element exists between the two substrates without being constrained by either substrate. Thus, since the thin film piezoelectric element is not constrained by either substrate, the stress received by the thin film piezoelectric element from the light-transmitting film-forming substrate 1 is released at a high temperature at this moment. Is done. Immediately after receiving the laser beam irradiation, the first metal thin film 3 side is at a high temperature, so that the stress can be released more effectively.

  This stress releasing step is effective when the piezoelectric thin film 4 is formed at a high temperature and its thermal expansion coefficient is different from that of the film-forming substrate 1. This is because stress is generated by the difference in thermal expansion when cooled to room temperature. When the film formation substrate 1 is magnesium oxide (MgO) and the piezoelectric thin film 4 is high-temperature formed lead zirconate titanate (PZT), the piezoelectric thin film 4 is subjected to compressive stress from the film formation substrate 1. It becomes the state. Then, simultaneously with the decrease in dielectric constant, the piezoelectric constant also decreases, and as a result, the piezoelectric effect decreases. The stress relief process described above can remove at least a portion of this undesirable stress.

  In FIG. 8, the thin film piezoelectric element is in a state of moving toward the transfer substrate 12 by the kinetic energy generated at the time of peeling. Soon, it collides with the transfer substrate 12 and, as shown in FIG. 9, the second metal thin film 5 and the transfer substrate 12 are bonded and firmly fixed by the impact at that time. In order to increase the bonding strength, it is preferable to use a soft metal such as gold (Au) or platinum (Pt) as the second metal thin film 5. With the above configuration, the thin film piezoelectric element is transferred to the transfer substrate 12. If a voltage is applied between the first metal thin film 3 and the second metal thin film 5, the transfer substrate 12 can be distorted by the piezoelectric action, and if a voltmeter is connected instead of voltage application, It can be used as a sensor for detecting the vibration state of the transfer substrate 12.

( Second reference example )
FIG. 10 is a schematic cross-sectional view for explaining an irradiation step of the laser beam 7 in the thin film piezoelectric element transfer method according to the second reference example . The difference from FIG. 7 for explaining the transfer method of the first reference example is only that the adhesive 13 is applied to the surface of the second metal thin film 5.

  FIG. 11 is a cross-sectional view immediately after the thin film piezoelectric element is peeled from the film forming substrate 1 as a result of the peeling reaction occurring in the sacrificial layer thin film 2 by the irradiation of the laser beam 7. From this state, it collides with the transfer substrate 12 and is finally transferred to the transfer substrate 12 as shown in FIG. By adopting such a transfer method, the thin film piezoelectric element can be reliably fixed to the transfer substrate 12 even if the impact force is weak. Therefore, transfer is possible even with a laser beam 7 having a weak energy density. As a result, it is possible to reduce the damage that the thin film piezoelectric element receives when the laser beam 7 is irradiated.

  Further, when the adhesive 13 is a conductive adhesive and at least a part of the surface of the transfer substrate 12 is conductive, when the thin film piezoelectric element is used, the second metal thin film 5 is electrically connected. This eliminates the need for wiring the second metal thin film 5 directly. The adhesive may be applied to the transfer substrate 12 side.

( Third reference example )
FIG. 13: is typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning the 3rd reference example of this invention. The difference from FIG. 10 for explaining the transfer method of the second reference example is only that the adhesive 13 is applied to the entire surface. The transfer method of this reference example can be used when it is difficult to selectively apply the adhesive 13 only on the piezoelectric element pattern as in the second reference example .

  When irradiated with the laser beam 7, peeling occurs as shown in FIG. Finally, the thin film piezoelectric element is transferred to the surface of the transfer substrate 12 as shown in FIG. The adhesive may be applied to the transfer substrate 12 side.

( Fourth reference example )
FIG. 16: is typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning the 4th reference example . The difference from FIG. 13 for explaining the transfer method of the third reference example is that the sacrificial layer thin film 2 is not formed with a pattern similar to the piezoelectric element pattern.

FIG. 17 is a cross-sectional view immediately after the laser beam 7 is irradiated. The generation of dust 11 in the sacrificial layer thin film shown in FIG. 6 for explaining the manufacturing method of the second embodiment is suppressed by the adhesive in this reference example . For this reason, it is useful in the case of the process which dislikes dust. Finally, as shown in FIG. 18, the thin film piezoelectric element is transferred to the transfer substrate 12.

( Fifth reference example )
FIG. 19 is a schematic cross-sectional view for explaining a laser beam irradiation step in the thin film piezoelectric element transfer method according to the fifth reference example . The difference from FIG. 7 for explaining the transfer method of the first reference example is that the transfer substrate 12 is placed in contact with the second metal thin film 5 before the laser light irradiation. When the laser beam 7 is radiated in such a manner, the thin film piezoelectric element does not fly after the laser beam irradiation, so that it can be transferred to an accurate position. After the transfer, if the two substrates are separated, the thin film piezoelectric element can be transferred and fixed on the surface of the transfer substrate 12 as shown in FIG.

( Sixth reference example )
FIG. 21 is a schematic cross-sectional view for explaining a laser beam irradiation step in the thin film piezoelectric element transfer method according to the sixth reference example . The difference from FIG. 19 for explaining the transfer method of the fifth reference example is that an adhesive 13 is formed.

The effect of providing the adhesive 13 has been described in the second reference example , and is therefore omitted. If the two substrates are separated after the laser light irradiation, a state in which the thin film piezoelectric element is transferred to the transfer substrate 12 as shown in FIG. 22 can be obtained.

Producing how the thin film piezoelectric element according to the present invention, piezoelectric, reliability is excellent in terms of low cost and is useful in the field using a variety of piezoelectric actuators. In particular, this piezoelectric actuator is useful in the field of head fine position control such as a hard disk drive.

Sectional drawing which shows typically the irradiation process of the laser beam in the manufacturing method of the thin film piezoelectric element concerning the 1st Embodiment of this invention In the same embodiment, a schematic plan view of the state when the laser beam is irradiated as viewed from the piezoelectric element pattern side The top view for demonstrating the method to irradiate only one shot of the laser beam of the irradiation area containing a some piezoelectric element pattern in the embodiment The figure which shows typically the mode of the cross section of the state immediately after irradiating a laser beam with respect to the structure shown in FIG. 3 in the embodiment. Sectional drawing which shows typically the irradiation process of the laser beam in the manufacturing method of the thin film piezoelectric element concerning the 2nd Embodiment of this invention In the same embodiment, a sectional view immediately after laser light irradiation Sectional drawing which shows typically the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning a 1st reference example In the same reference example , a sectional view of the state immediately after irradiating the laser beam shown in FIG. Sectional drawing which shows the state which the 2nd metal thin film and the transfer substrate were joined and firmly fixed by the impact at that time in the same reference example in the impact Typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning a 2nd reference example In the same reference example , a cross-sectional view immediately after the thin film piezoelectric element is peeled off from the film formation substrate as a result of the peeling reaction occurring in the sacrificial layer thin film by laser light irradiation Sectional drawing which shows the state which collided with the transfer substrate and finally transferred to the transfer substrate in the reference example Typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning a 3rd reference example Sectional view showing the state where peeling occurred due to laser light irradiation in the reference example Sectional drawing which shows the state by which the thin film piezoelectric element was transcribe | transferred on the surface of the board | substrate for transfer in the reference example Typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning the 4th reference example In the reference example , a cross-sectional view immediately after the laser beam is irradiated Sectional drawing which shows the state by which the thin film piezoelectric element was transcribe | transferred to the transfer substrate in the reference example Typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning the 5th reference example In the same reference example , a cross-sectional view showing a state in which two substrates are separated and a thin film piezoelectric element is transferred and fixed to the surface of the transfer substrate after transfer in the reference example . Typical sectional drawing for demonstrating the irradiation process of the laser beam in the transfer method of the thin film piezoelectric element concerning the 6th reference example Sectional drawing which shows the state which separated the two board | substrates after the laser beam irradiation in the same reference example , and the thin film piezoelectric element was transcribe | transferred to the transfer board Sectional view at the time of laser irradiation for transfer of the transfer layer in the prior art Sectional view of the transfer of the transfer layer in the prior art completed Cross-sectional view during laser irradiation for transfer of thin film piezoelectric element in the prior art Top view of the first irradiation in the laser irradiation method in the prior art Top view of the second irradiation in the laser irradiation method in the prior art

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film-forming board | substrate 2 Sacrificial layer thin film 3 1st metal thin film 4 Piezoelectric thin film 5 2nd metal thin film 6 Resin 7 Laser beam 8 Light-shielding area 9 Transmission area 10 Piezoelectric element pattern 11 Dust 12 Transfer board 13 Adhesive 14 Covered Transfer layer 15 Part 16 Vibration plate

Claims (13)

Forming a laminated film having a sacrificial layer thin film, a first metal thin film, a piezoelectric thin film and a second metal thin film on one surface of a film-forming substrate having translucency;
Processing the laminated film to form a piezoelectric element pattern comprising the first metal thin film, the piezoelectric thin film, and the second metal thin film on the sacrificial layer thin film;
A laser beam having an irradiation area including the piezoelectric element pattern is irradiated to the sacrificial layer thin film from the other surface side of the film formation substrate, and a peeling reaction is generated at the sacrificial layer thin film portion to generate the piezoelectric the body element pattern possess a step of peeling from the top of the substrate for the deposition,
The sacrificial layer is an oxide thin film containing lead,
A method for manufacturing a thin film piezoelectric element. The oxide thin film has a perovskite structure,
The method for manufacturing a thin film piezoelectric element according to claim 1 . 3. The method of manufacturing a thin film piezoelectric element according to claim 1, wherein the laser beam irradiation is performed only for one shot. The second metal thin film is composed of at least one selected from platinum (Pt), palladium (Pd), gold (Au), copper (Cu), aluminum (Al) and silver (Ag) as its component. The method for producing a thin film piezoelectric element according to any one of claims 1 to 3, wherein the thin film piezoelectric element is contained. The crystals of the piezoelectric thin film, method of manufacturing the thin film piezoelectric device according to any one of claims 1 to 4, characterized in that preferentially oriented in the polarization axis direction. 6. The thin film according to claim 5 , wherein the piezoelectric thin film has a tetragonal perovskite crystal structure mainly composed of lead zirconate titanate (PZT) and has a (001) orientation. A method for manufacturing a piezoelectric element. Substrate membrane-forming method for manufacturing a thin film piezoelectric element according to any one of claims 1 to 6, wherein the crystal surface is a monocrystalline magnesia (MgO) substrate is (001) . The method of manufacturing a thin film piezoelectric element according to any one of claims 1 to 7, wherein the first metal thin film is platinum (Pt) crystallized in (001). The thickness of the piezoelectric thin film is less than greater than 1 [mu] m 10 [mu] m, from claim 1, wherein the first metal thin film and the second metal thin film thickness and less than greater than 10 nm 500 nm to claim 8 The manufacturing method of the thin film piezoelectric element in any one. When forming the piezoelectric element pattern by processing the laminated film, the piezoelectric element according to claim claim 1 outer peripheral region, characterized in that the state of the deposition substrate is exposed pattern 9 The manufacturing method of the thin film piezoelectric element in any one of the above. When by processing the laminated film forming the piezoelectric element patterns, claims 1 to 9 the outer peripheral region of the piezoelectric element pattern, characterized in that a state in which the sacrificial layer film is exposed A method for producing a thin film piezoelectric element according to any one of the above. The method of manufacturing a thin film piezoelectric element according to any one of claims 1 to 11, wherein the thin film piezoelectric element is an actuator. The method for manufacturing a thin film piezoelectric element according to any one of claims 1 to 11, wherein the thin film piezoelectric element is a vibration sensor.

Images