JP4944002B2 - Shielding material holding mechanism of sample preparation device - Google Patents
Shielding material holding mechanism of sample preparation device Download PDFInfo
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- JP4944002B2 JP4944002B2 JP2007321798A JP2007321798A JP4944002B2 JP 4944002 B2 JP4944002 B2 JP 4944002B2 JP 2007321798 A JP2007321798 A JP 2007321798A JP 2007321798 A JP2007321798 A JP 2007321798A JP 4944002 B2 JP4944002 B2 JP 4944002B2
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Description
本発明は試料作製装置の遮蔽材保持機構に関し、更に詳しくはイオンビームにより試料がミリングされる時に遮蔽材保持部の熱ドリフトが遮蔽材に伝わらないようにした試料作製装置の遮蔽材保持機構に関する。 The present invention relates to a shielding material holding mechanism of a sample preparation device, and more particularly to a shielding material holding mechanism of a sample preparation device that prevents thermal drift of the shielding material holding portion from being transmitted to the shielding material when a sample is milled by an ion beam. .
試料の断面図を撮影するために、試料の断面をエッチング（ミリング）により削るＣＰ装置（クロスセクション・ポリシャー：イオンによる断面作製装置）が知られている。この装置は、遮蔽材を遮蔽材保持部に保持し、エッチング時に遮蔽材保持部が試料の所定の領域を遮蔽し、試料のエッチング部以外の領域がイオンビームの照射を受けることを防いでいる。試料と遮蔽材とは試料ホルダーに設けられた永久磁石により接着精度が保持される。 In order to photograph a cross-sectional view of a sample, a CP device (cross-section polisher: cross-section preparation device using ions) that cuts a cross-section of a sample by etching (milling) is known. In this apparatus, the shielding material is held in the shielding material holding portion, the shielding material holding portion shields a predetermined region of the sample during etching, and the region other than the etching portion of the sample is prevented from being irradiated with the ion beam. . The sample and the shielding material are kept in adhesion accuracy by a permanent magnet provided on the sample holder.
例えば、イオンビームエッチング状態でない時には、試料ホルダーに設けられた永久磁石をオフにすることで、遮蔽材が試料ホルダーに固定されず位置調節可能とし、永久磁石をオンにすると、遮蔽材が試料の真上に磁力で吸着し、試料面がイオンビームにより照射されることを防ぎ、イオンビームにより試料断面のエッチングが行なわれる。 For example, when the ion beam etching is not performed, the permanent magnet provided on the sample holder is turned off, so that the shielding material is not fixed to the sample holder, and the position can be adjusted. The sample is adsorbed by a magnetic force directly above, and the sample surface is prevented from being irradiated by the ion beam, and the sample cross section is etched by the ion beam.
従来のこの種の装置としては、光学顕微鏡により遮蔽材の位置調整を行ない、この位置調整が行われた試料の所定の位置にイオンビームが正確に照射されるようにした技術が知られている（例えば特許文献１参照）。 As a conventional apparatus of this type, a technique is known in which the position of a shielding material is adjusted by an optical microscope so that an ion beam is accurately irradiated to a predetermined position of the sample subjected to this position adjustment. (For example, refer to Patent Document 1).
また、イオンビームマスク用部材が標本の表面に固定され、イオンビームにより平削り加工され、この平削り加工された標本の状態を観測するための光学顕微鏡が含まれたシステムが知られている（例えば特許文献２参照）。
前述した従来の装置の場合、遮蔽材を遮蔽材保持部で保持したままイオンを試料に照射し、断面作製を行なっていると、遮蔽材がイオンビームに照射されて温度が上昇し、この温度が遮蔽材保持部にも伝達され、遮蔽材の端縁部により決めた断面作製位置がずれてしまうという問題がある。 In the case of the above-described conventional apparatus, if the sample is irradiated with ions while the shielding material is held by the shielding material holding part and the cross-section is prepared, the shielding material is irradiated with the ion beam and the temperature rises. Is also transmitted to the shielding material holding portion, and there is a problem that the cross-section production position determined by the edge portion of the shielding material is shifted.
本発明はこのような課題に鑑みてなされたものであって、遮蔽材に遮蔽材保持部の熱ドリフトが伝達されないようにした試料作製装置の遮蔽材保持機構を提供することを目的としている。 The present invention has been made in view of such problems, and an object of the present invention is to provide a shielding material holding mechanism of a sample preparation apparatus in which the thermal drift of the shielding material holding portion is not transmitted to the shielding material.
本発明は、イオンビームにより試料をエッチングして試料観察面を作製するようにした試料作製装置に用いられる遮蔽材保持機構であって、試料表面にイオンビームが照射されることを遮蔽する遮蔽材を用いる遮蔽材保持機構において、遮蔽材を保持する遮蔽材保持部と、該遮蔽材保持部の先端部に設けられた第１の永久磁石と、該遮蔽材保持部の下方に配置された遮蔽材と、該遮蔽材の下方に設けられたその内部に試料を保持する試料ホルダーと、該試料ホルダーに取り付けられた、その磁力をレバーによりオン／オフできる第２の永久磁石と、を有し、前記第２の永久磁石をオフにすると、前記遮蔽材は前記第１の永久磁石により遮蔽材保持部に吸着され、該第２の永久磁石をオンにすると、前記遮蔽材は前記試料ホルダーに吸着されるように構成されたことを特徴とする。 The present invention relates to a shielding material holding mechanism used in a sample preparation apparatus in which a sample observation surface is prepared by etching a sample with an ion beam, and shields the sample surface from being irradiated with an ion beam. In the shielding material holding mechanism using the shielding material, the shielding material holding portion for holding the shielding material, the first permanent magnet provided at the tip of the shielding material holding portion, and the shielding disposed below the shielding material holding portion. A sample holder that holds the sample inside the material provided below the shielding material, and a second permanent magnet that is attached to the sample holder and whose magnetic force can be turned on / off by a lever. When the second permanent magnet is turned off, the shielding material is attracted to the shielding material holding portion by the first permanent magnet, and when the second permanent magnet is turned on, the shielding material is attached to the sample holder. Adsorbed Characterized in that it is configured urchin.
本発明によれば、イオンビーム照射時に遮蔽材が遮蔽材保持部から離れ、試料ホルダーに吸着されるので、遮蔽材が遮蔽材保持部の温度変化によるドリフトの影響を受けることがなくなり、正確な試料端面のエッチングを実現することができる。 According to the present invention, since the shielding material is separated from the shielding material holding portion and is adsorbed to the sample holder at the time of ion beam irradiation, the shielding material is not affected by the drift due to the temperature change of the shielding material holding portion, and accurate. Etching of the sample end face can be realized.
以下、図面を参照して本発明の実施の形態を詳細に説明する。図１は本発明の一実施の形態を示す構成図である。図において、１はエッチング（ミリング）の対象となる試料、２は該試料１を保持する試料ホルダーである。３は磁石レバーである。試料ホルダー２には、永久磁石１２が取り付けられている。磁石レバー３をＦ（Ｆｒｅｅ）側にセットすると永久磁石としての機能がオフになり、磁石レバー３をＬ（Ｌｏｃｋ）側にセットすると、永久磁石としての機能がオンになる。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1 is a sample to be etched (milling), and 2 is a sample holder for holding the sample 1. 3 is a magnet lever. A permanent magnet 12 is attached to the sample holder 2. When the magnet lever 3 is set to the F (Free) side, the function as a permanent magnet is turned off, and when the magnet lever 3 is set to the L (Lock) side, the function as a permanent magnet is turned on.
図２は永久磁石の動作を示す図である。１０，１１は磁性体としての鉄心であり、この鉄心１０，１１で形成される空間領域に永久磁石１２が配置されている。磁石レバー３がＦの位置にセットされると、永久磁石１２は図の実線の位置にきて、鉄心１０，１１に磁路は形成されず、永久磁石１２は磁石として機能しない。一方、磁石レバー３がＬの位置にセットされると、永久磁極１２は図の破線で示す位置にきて、鉄心１０，１１との間に磁路を形成し、永久磁石としての機能を発揮する。 FIG. 2 is a diagram showing the operation of the permanent magnet. Reference numerals 10 and 11 denote iron cores as magnetic bodies, and permanent magnets 12 are arranged in a space region formed by the iron cores 10 and 11. When the magnet lever 3 is set at the position F, the permanent magnet 12 comes to the position of the solid line in the figure, no magnetic path is formed in the iron cores 10 and 11, and the permanent magnet 12 does not function as a magnet. On the other hand, when the magnet lever 3 is set at the position L, the permanent magnetic pole 12 comes to the position indicated by the broken line in the figure, forms a magnetic path between the iron cores 10 and 11, and functions as a permanent magnet. To do.
４はカセットステージであり、部材Ａ１とＡ２から構成されており、後述する遮蔽材保持部５と一体となっている。該カセットステージ４は、図の矢印Ｙ方向に移動可能に構成されている。該カセットステージ４は、図示しない緩和プランジャーから図に示す方向の力を受け、支持されている。Ａ３はカセットステージ４が取り付けられる部材である。５はカセットステージ４の一端に設けられた遮蔽材保持部である。６は該遮蔽材保持部５に埋め込まれた永久磁石である。７は試料１をイオンビームＩＢの照射から遮蔽するための遮蔽材である。該遮蔽材７としては、磁性材料の表面に非晶質金属が固着されたものが使用されている。例えば、ニッケル−リン（リン１０％以上）無電界メッキ等によって非晶質金属が磁性材料表面に固着されている。該遮蔽材７は該遮蔽材保持部５の一端に取り付けられた図示しないストッパによって位置決めされる。１０は部材Ａ３が取り付けられるベース（土台）である。該ベース１０は、カセットステージ４と共にＺ軸方向に上下動させることができるようになっている。ＩＢは試料１の一端をエッチングするイオンビームである。図に示す機構は全て真空内である。このように構成された装置の動作を説明すると、以下の通りである。 Reference numeral 4 denotes a cassette stage, which is composed of members A1 and A2, and is integrated with a shielding material holding portion 5 described later. The cassette stage 4 is configured to be movable in the direction of arrow Y in the figure. The cassette stage 4 is supported by receiving a force in the direction shown in the figure from a relaxation plunger (not shown). A3 is a member to which the cassette stage 4 is attached. Reference numeral 5 denotes a shielding material holder provided at one end of the cassette stage 4. Reference numeral 6 denotes a permanent magnet embedded in the shielding material holding portion 5. 7 is a shielding material for shielding the sample 1 from the irradiation of the ion beam IB. As the shielding material 7, a material in which an amorphous metal is fixed to the surface of a magnetic material is used. For example, an amorphous metal is fixed to the surface of the magnetic material by nickel-phosphorus (phosphorus 10% or more) electroless plating or the like. The shielding material 7 is positioned by a stopper (not shown) attached to one end of the shielding material holding portion 5. Reference numeral 10 denotes a base (base) to which the member A3 is attached. The base 10 can be moved up and down in the Z-axis direction together with the cassette stage 4. IB is an ion beam for etching one end of the sample 1. All mechanisms shown in the figure are in a vacuum. The operation of the apparatus configured as described above will be described as follows.
１）磁石レバーＦの時
この時には、試料ホルダー２側に設けられた永久磁石１２は磁石として機能しない。この結果、遮蔽材７は遮蔽材保持部５に埋め込まれた永久磁石６により遮蔽材保持部５に吸着されている。この時、ストッパ８により遮蔽材７の位置決めがなされる。この状態においては、位置合わせ中、即ちカセットステージ４のＺ移動、Ｙ移動中は試料１を移動させても遮蔽材７は遮蔽材保持部５に吸着されているので、動くことはない。また、この時、試料ホルダー２へのカセットステージ４の重みを抑えるため、カセットステージＺ移動つまみ（図示せず）とは別にカセットステージ４より若干弱い力のプランジャーを使用する。これにより、マニュアルつまみでの微調整は不要になる。
1) At the time of the magnet lever F At this time, the permanent magnet 12 provided on the sample holder 2 side does not function as a magnet. As a result, the shielding material 7 is attracted to the shielding material holding portion 5 by the permanent magnet 6 embedded in the shielding material holding portion 5. At this time, the shielding material 7 is positioned by the stopper 8. In this state, even when the sample 1 is moved during the alignment, that is, during the Z movement and Y movement of the cassette stage 4, the shielding material 7 is adsorbed by the shielding material holding portion 5, and therefore does not move. At this time, in order to suppress the weight of the cassette stage 4 to the sample holder 2, a plunger having a slightly weaker force than that of the cassette stage 4 is used in addition to the cassette stage Z moving knob (not shown). This eliminates the need for fine adjustment with a manual knob.
２）磁石レバーＬの時
この時には、試料ホルダー２側に設けられた永久磁石１２は磁石として機能し、しかも遮蔽材保持部５に設けられた永久磁石６よりも磁力が強い。この結果、遮蔽材７は試料ホルダー２側に吸着される。この状態で、イオンビームＩＢが試料１の端部に照射され、エッチングがなされる。しかも、この時遮蔽材７は遮蔽材保持部５とは離れているので、イオンビーム照射により、遮蔽材７が温度上昇しても遮蔽材保持部５には伝わらない。従って、遮蔽材７の位置が狂って試料端面のミリング位置が不正確になることはない。本発明によれば、遮蔽材７の脱着が容易で、機能かつ操作性も落とすことはない。また、本発明によれば、イオンビーム照射時に遮蔽材７が遮蔽材保持部５から離れ、試料ホルダー２に吸着されるので、遮蔽材７が遮蔽材保持部５の温度変化によるドリフトの影響を受けることがなくなり、正確な試料端面のエッチングを実現することができる。
2) At the time of the magnet lever L At this time, the permanent magnet 12 provided on the sample holder 2 side functions as a magnet and has a stronger magnetic force than the permanent magnet 6 provided on the shielding material holding portion 5. As a result, the shielding material 7 is adsorbed on the sample holder 2 side. In this state, the end of the sample 1 is irradiated with the ion beam IB and etching is performed. In addition, since the shielding material 7 is separated from the shielding material holding portion 5 at this time, even if the temperature of the shielding material 7 rises due to ion beam irradiation, it is not transmitted to the shielding material holding portion 5. Therefore, the position of the shielding material 7 does not go out of order and the milling position of the sample end face does not become inaccurate. According to the present invention, the shielding material 7 can be easily detached and the function and operability are not deteriorated. Further, according to the present invention, the shielding material 7 is separated from the shielding material holding portion 5 and is adsorbed to the sample holder 2 at the time of ion beam irradiation, so that the shielding material 7 is affected by the drift due to the temperature change of the shielding material holding portion 5. Therefore, the etching of the sample end face can be realized accurately.
１ 試料
２ 試料ホルダー
３ 磁石レバー
４ カセットステージ
５ 遮蔽材保持部
６ 永久磁石
７ 遮蔽材
ＩＢ イオンビーム
DESCRIPTION OF SYMBOLS 1 Sample 2 Sample holder 3 Magnet lever 4 Cassette stage 5 Shielding material holding part 6 Permanent magnet 7 Shielding material IB Ion beam
Claims (1)
遮蔽材を保持する遮蔽材保持部と、
該遮蔽材保持部の先端部に設けられた第１の永久磁石と、
該遮蔽材保持部の下方に配置された遮蔽材と、
該遮蔽材の下方に設けられたその内部に試料を保持する試料ホルダーと、
該試料ホルダーに取り付けられた、その磁力をレバーによりオン／オフできる第２の永久磁石と、
を有し、
前記第２の永久磁石をオフにすると、前記遮蔽材は前記第１の永久磁石により遮蔽材保持部に吸着され、該第２の永久磁石をオンにすると、前記遮蔽材は前記試料ホルダーに吸着されるように構成されたことを特徴とする試料作製装置の遮蔽材保持機構。 A shielding material holding mechanism used in a sample preparation apparatus in which a sample observation surface is prepared by etching a sample with an ion beam, the shielding material using a shielding material that shields the sample surface from being irradiated with an ion beam In the holding mechanism,
A shielding material holding part for holding the shielding material;
A first permanent magnet provided at the tip of the shielding material holding part;
A shielding material disposed below the shielding material holding portion;
A sample holder for holding a sample in the inside of the shielding material provided below,
A second permanent magnet attached to the sample holder, the magnetic force of which can be turned on / off by a lever;
Have
When the second permanent magnet is turned off, the shielding material is attracted to the shielding material holding portion by the first permanent magnet, and when the second permanent magnet is turned on, the shielding material is attracted to the sample holder. A shielding material holding mechanism of a sample preparation device, which is configured as described above.
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| JP2007321798A JP4944002B2 (en) | 2007-12-13 | 2007-12-13 | Shielding material holding mechanism of sample preparation device |
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| JP2007321798A JP4944002B2 (en) | 2007-12-13 | 2007-12-13 | Shielding material holding mechanism of sample preparation device |
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| JP3942800B2 (en) * | 2000-04-28 | 2007-07-11 | 独立行政法人科学技術振興機構 | Sample holder |
| JP4208658B2 (en) * | 2003-07-16 | 2009-01-14 | 日本電子株式会社 | Sample preparation equipment |
| JP4557130B2 (en) * | 2003-09-16 | 2010-10-06 | 日本電子株式会社 | Sample preparation equipment |
| DE102004015873B4 (en) * | 2004-03-31 | 2007-03-22 | Joachim Fiedler | Detachable magnetic holder |
| JP2007025118A (en) * | 2005-07-14 | 2007-02-01 | Seiko Epson Corp | Manufacturing device of alignment layer, liquid crystal device, and electronic appliance |
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