JP4815344B2 - Mramデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 - Google Patents
Mramデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 Download PDFInfo
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- JP4815344B2 JP4815344B2 JP2006513086A JP2006513086A JP4815344B2 JP 4815344 B2 JP4815344 B2 JP 4815344B2 JP 2006513086 A JP2006513086 A JP 2006513086A JP 2006513086 A JP2006513086 A JP 2006513086A JP 4815344 B2 JP4815344 B2 JP 4815344B2
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- 238000000059 patterning Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
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- 239000004020 conductor Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
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- 238000001312 dry etching Methods 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- -1 PEN Chemical compound 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
下記の本発明の詳細な説明は、事実上単に典型的なものであり、本発明、又は本発明の用途および使用を限定することを目的としていない。更に、前記本発明の背景技術、又は下記の本発明の詳細な説明において示される任意の理論に束縛されない。
第2磁気層24の成長後、第2導電層36が第2磁気層24を覆うように成長する。第2導電層26は、任意の適切な導電材料によって形成される。好ましくは、第2導電層26は、タンタル(Ta)、タングステン(W)、チタン(Ti)、アルミニウム(Al)、窒化タンタル(TaN)、又はそれらの組み合わせ若しくは合金によって形成される。より好ましくは、第2導電層26はタンタルによって形成される。
Claims (3)
- 磁気エレクトロニクス素子の配列において磁気エレクトロニクス素子を覆う導電層を接続するための方法であって、
誘電領域を覆うように記憶素子層を形成する工程と、
前記記憶素子層を覆うように第1導電層を成長させる工程と、
前記第1導電層を覆うように第1誘電層を成長させる工程と、
第1マスキング層を形成するために、前記第1誘電層をパターン化およびエッチング処理する工程と、
前記第1マスキング層を用いて前記第1導電層をエッチング処理することにより、前記記憶素子層の露出部を得る工程と、
前記記憶素子層の露出部及び前記第1マスキング層を覆うように第2誘電層を成長させる工程と、
前記第2誘電層をパターン化及びエッチング処理することにより第2マスキング層を形成する工程と、
前記第2マスキング層を用いて前記記憶素子層の露出部をエッチング処理する工程と、
前記第2マスキング層および前記誘電領域を覆うように第3誘電層を成長させる工程であって、前記第3誘電層が前記第1マスキング層と異なる材料である工程と、
前記第1マスキング層を露出させるために前記第3誘電層の一部を除去する工程と、
前記第1マスキング層が前記第2マスキング層に比べて早い速度でエッチング処理されて前記第1導電層が露出するように、前記第3誘電層および前記第1マスキング層を化学エッチング処理する工程と、
前記記憶素子層への電気的接続を形成するため、前記第2マスキング層及び露出した前記第1導電層を覆うように金属層を成長させる工程とを含み、
前記記憶素子層を形成する工程は、前記誘電領域を覆うように第1磁気層を形成する工程と、前記第1磁気層を覆うように分離層を形成する工程と、前記分離層を覆うように第2磁気層を形成する工程と
を含む方法。 - 前記分離層がトンネル障壁層である請求項1に記載の方法。
- 磁気エレクトロニクス素子の配列において磁気エレクトロニクス素子を覆う導電層を接続するための方法であって、
誘電領域を覆うように第1磁気層を形成する工程と、
前記第1磁気層を覆うようにトンネル障壁層を形成する工程と、
前記トンネル障壁層を覆うように第2磁気層を形成する工程と、
前記第2磁気層を覆うように第1導電層を成長させる工程と、
前記第1導電層を覆うように第1誘電層を成長させる工程と、
第1マスキング層を形成するために前記第1誘電層をパターン化およびエッチング処理する工程と、
前記第1マスキング層を用いて前記第1導電層をエッチング処理する工程であって、前記第1マスキング層のエッチング処理によって前記第2磁気層の一部が露出される工程と、
前記第2磁気層の絶縁不活性部および活性部を形成するために前記第2磁気層の露出部を変質させる工程であって、前記活性部が磁気トンネル接合素子の一部を含み、かつ前記絶縁不活性部が絶縁体を含む工程と、
前記第1マスキング層及び前記第2磁気層の絶縁不活性部を覆うように第2誘電層を成長させる工程と、
前記第2誘電層をパターン化及びエッチング処理することにより第2マスキング層を形成する工程と、
前記第2マスキング層を用いて、前記第2誘電層の絶縁不活性部、前記トンネル障壁層及び前記第1磁気層をエッチング処理する工程と、
前記第2マスキング層および前記誘電領域を覆うように第3誘電層を成長させる工程であって、前記第3誘電層が前記第1マスキング層と異なる材料である工程と、
前記第1マスキング層を露出するために前記第3誘電層の一部を除去する工程と、
前記第1マスキング層が前記第2マスキング層に比べて早い速度でエッチング処理されて前記第1導電層が露出するように、前記第3誘電層および前記第1マスキング層を化学エッチング処理する工程と、
記憶素子層への電気的接続を形成するため、前記第2マスキング層及び露出した前記第1導電層を覆うように金属層を成長させる工程と
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/421,096 US6881351B2 (en) | 2003-04-22 | 2003-04-22 | Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices |
US10/421,096 | 2003-04-22 | ||
PCT/US2004/011872 WO2004095515A2 (en) | 2003-04-22 | 2004-04-16 | Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices |
Publications (3)
Publication Number | Publication Date |
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JP2006524436A JP2006524436A (ja) | 2006-10-26 |
JP2006524436A5 JP2006524436A5 (ja) | 2007-06-07 |
JP4815344B2 true JP4815344B2 (ja) | 2011-11-16 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2006513086A Expired - Lifetime JP4815344B2 (ja) | 2003-04-22 | 2004-04-16 | Mramデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6881351B2 (ja) |
JP (1) | JP4815344B2 (ja) |
KR (1) | KR101036703B1 (ja) |
CN (1) | CN1777955B (ja) |
TW (1) | TWI340771B (ja) |
WO (1) | WO2004095515A2 (ja) |
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US10720487B2 (en) * | 2018-06-28 | 2020-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with magnetic element |
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JP2000353791A (ja) * | 1999-05-17 | 2000-12-19 | Motorola Inc | 磁気ランダム・アクセス・メモリおよびその製作方法 |
JP2003069112A (ja) * | 2001-08-28 | 2003-03-07 | Nec Corp | 強磁性トンネル接合素子の製造方法 |
JP2003258129A (ja) * | 2002-03-01 | 2003-09-12 | Seiko Epson Corp | 不揮発性記憶装置の製造方法 |
WO2003094182A1 (en) * | 2002-04-30 | 2003-11-13 | Micron Technology, Inc. | Method of forming mram devices |
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JP2006524436A (ja) | 2006-10-26 |
KR20060009862A (ko) | 2006-02-01 |
WO2004095515B1 (en) | 2005-03-17 |
WO2004095515A3 (en) | 2005-01-27 |
US6881351B2 (en) | 2005-04-19 |
TWI340771B (en) | 2011-04-21 |
WO2004095515A8 (en) | 2005-11-17 |
CN1777955A (zh) | 2006-05-24 |
KR101036703B1 (ko) | 2011-05-24 |
WO2004095515A2 (en) | 2004-11-04 |
CN1777955B (zh) | 2011-06-29 |
US7476329B2 (en) | 2009-01-13 |
US20040211749A1 (en) | 2004-10-28 |
US20050130374A1 (en) | 2005-06-16 |
TW200508417A (en) | 2005-03-01 |
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