JP4899801B2 - Semiconductor device, motor having the same, and motor driving device - Google Patents

Description

  The present invention relates to a semiconductor device, a motor including the semiconductor device, and a motor driving device, and more particularly, to a semiconductor device driven sine wave, a motor including the semiconductor device, and a motor driving device.

  In recent years, inverter-controlled three-phase brushless motors have been widely adopted for household electric appliances and industrial motors. In particular, price competition is intense in household electric appliances, and it is desired to provide an inexpensive inverter device. For this reason, an inexpensive 120-degree energization method that has a relatively simple circuit configuration and high motor efficiency is used as an inverter method.

  An example of a conventional 120-degree energization method will be described with reference to FIG. In FIG. 9, reference numeral 1 denotes a commercial power supply, and 2 denotes a power supply circuit, which generates VDC, Vcc, and Vm based on the AC voltage from the commercial power supply 1. The main power supply voltage for driving the inverter of the motor, Vcc is the power supply voltage for the driving circuit of the semiconductor device 10C for driving the motor at 120 degrees, and Vm is the power supply voltage for the microcomputer 3. The microcomputer 3 outputs the speed command signal Vsp to the motor 5C and inputs the rotation speed signal FG output from the motor 5C. The power supply circuit 2 and the microcomputer 3 are disposed on the first substrate 4.

  The motor 5C includes a motor-embedded substrate 6C. The 120 ° energization motor driving semiconductor device 10C, the Hall IC 9C, and the shunt resistor Rs are arranged on the motor-embedded substrate 6C. A coil 8 is connected to an output terminal of the 120 ° energization motor driving semiconductor device 10C.

FIG. 10 is a timing chart of the 120-degree energization method. 10A to 10C show magnetic pole position signals VHU ′, VHV ′, and VHW ′, and D to F in FIG. 10 denote output voltages VUM ′,
The schematic waveforms of VVM ′ and VWM ′ are shown. The 120-degree energization system motor driving semiconductor device 10C outputs an H signal and an L signal for a 120-degree period in electrical angle based on the magnetic pole position signals VHU ', VHV', and VHW '. A current of 120 degrees flows through the coil 8, and there is a non-energization period of 60 degrees between each 120 degree period. When the motor is driven by the 120-degree energization method, the torque ripple of the motor increases, so that noise is easily generated when the motor is driven.

  As a method for reducing noise, there is a method called a sine wave drive method in which the phase current of the motor is made sinusoidal. In order to perform high-efficiency operation of the motor by the sine wave drive method, it is necessary to perform phase control of the phase current of the motor. However, for this phase control, it is necessary to use an expensive current sensor or to perform an advanced arithmetic process using an expensive microcomputer, which is an expensive system as compared with the 120-degree energization method.

  Patent Document 1 describes a method of using an analog circuit to make a motor phase current a pseudo sine wave at a low cost.

JP-A-2004-120841 (Description of paragraphs (0020) to (0025) and (0046) to (0049))

When the motor is driven by the 120-degree energization method, the torque ripple of the motor increases.
Therefore, noise is easily generated when the motor is driven. In the conventional sine wave driving method, it is necessary to use an expensive current sensor or to perform advanced arithmetic processing using an expensive microcomputer in order to control the phase of the motor phase current.

  In the method of making the phase current described in Patent Document 1 a pseudo sine wave, the torque ripple of the motor cannot be sufficiently reduced, and the current phase is not controlled, so that the motor cannot be operated efficiently. .

  An object of the present invention is to solve the above-described problems, and it is an object of the present invention to simultaneously realize a reduction in torque ripple of a motor by a sine wave driving method and a high-efficiency operation of a motor by current phase control.

  The motor drive device of the present invention includes a switching element for driving the motor and a drive circuit for driving the switching element, and has a current polarity detection function for detecting the current polarity of the phase current of the motor. It is characterized by that. The motor of the present invention incorporates this motor driving device.

  The three-phase motor of the present invention includes a motor driving semiconductor device, a control semiconductor device, and at least one magnetic pole position detector, and the motor driving semiconductor device drives a three-phase motor. Six switching elements, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, a driving circuit for driving the six switching elements, and the six A one-package motor driving semiconductor device composed of one chip or a plurality of chips and having six control signal input terminals for inputting six control signals for controlling on / off of each of the switching elements. The control semiconductor device receives a magnetic pole position signal output from the magnetic pole position detector, and performs six controls for on / off control of each of the six switching elements. Outputs No., the six control signals are input to six control input terminals of the motor driving semiconductor device.

  According to the present invention, reduction of torque ripple of the motor by the sine wave drive method and high efficiency operation of the motor by current phase control can be realized at the same time.

  The details of the present invention will be described below with reference to the drawings.

  FIG. 1 is an explanatory diagram of this embodiment. In FIG. 1, reference numeral 1 denotes a commercial power source. Reference numeral 2 in FIG. 1 denotes a power supply circuit, which generates DC VDC, Vcc, and Vm based on the AC voltage from the commercial power supply 1. The VDC is a high voltage of about 141 V to about 450 V, for example, and is used as a high voltage power supply voltage for driving an inverter of the motor. Vcc is about 15 V, for example, and is a power supply voltage for a driving circuit used in the motor driving semiconductor device 10. Vm is a power supply voltage for the microcomputer 3, and is, for example, about 3V to 5.5V. The power supply circuit 2 and the microcomputer 3 are disposed on the first substrate 4.

  The microcomputer 3 outputs the speed command signal Vsp and inputs the rotation speed signal FG output from the motor 5. The microcomputer 3 adjusts the rotation speed of the motor 5 by this speed command signal Vsp. The speed command signal Vsp may be an analog signal or a pulse signal. In FIG. 1, the Vsp line and the FG line are directly connected between the microcomputer 3 and the control semiconductor device 7 by wiring, but may be connected via a photocoupler or a buffer circuit. The microcomputer 3 may output a pulse speed command signal, convert the signal into an analog signal by a CR integration circuit including a capacitor and a resistor, and input the analog speed command signal to the control semiconductor device 7.

  In FIG. 1, reference numeral 6 denotes a motor built-in substrate, which is built in the motor 5. The control semiconductor device 7, the motor drive semiconductor device 10, the Hall IC 9, the shunt resistor Rs, the high-voltage power supply voltage detection circuit 15, and the temperature detection circuit 16 are disposed on the motor-embedded substrate 6.

Although not shown, Vcc or VB is used as the power supply voltage for the Hall IC 9. In some cases, a Hall element having a lower cost may be used instead of the Hall IC 9. The Hall IC 9 and the Hall element are examples of a magnetic pole position detector, and output a magnetic pole position signal indicating the position of the permanent magnet rotor of the motor 5. In the case of a Hall element, the output voltage of each Hall element is a voltage between two terminals. Usually, the output voltage of the Hall element is a minute voltage of 1 V or less, so that it is necessary to amplify the signal using an amplifier. In FIG. 1, although two Hall ICs are used for the magnetic pole position detector, three or one magnetic pole position detector may be used.

  1 includes a power supply voltage VB, a speed command signal Vsp from the microcomputer 3, a current polarity signal VUP and a fault signal Vf from the motor driving semiconductor device 10, and a high voltage from the high voltage power supply voltage detection circuit 15. The power supply voltage signal Vh, the temperature signal Vt from the temperature detection circuit 16, and the magnetic pole position signals VHU and VHV from the Hall IC 9 are input. The control semiconductor device 7 may be a general-purpose microcomputer or a motor drive dedicated IC.

  In FIG. 1, VB is a power supply voltage of the control semiconductor device 7, and is, for example, about 3V to 5.5V. In FIG. 1, it is generated inside the motor driving semiconductor device 10, but it may be generated from Vcc by an external regulator, a Zener diode or the like. Alternatively, the power supply voltage for the control semiconductor device 7 may not be generated inside the motor 5, and Vm on the first substrate 4 may be input to the control semiconductor device 7 instead.

The control semiconductor device 7 sends the control signals VUT, VVT,
VWT, VUB, VVB, VWB are output. The control signals VUT, VVT, VWT, VUB, VVB, and VWB are signals for controlling on / off of switching elements in the motor driving semiconductor device 10. Control performed by the control semiconductor device 7 will be described later.

The motor driving semiconductor device 10 includes an internal power supply circuit 11, a current polarity detection circuit 13, and a protection circuit 14. Although not shown in FIG. 1, six switching elements and a drive circuit for driving the switching elements are also provided. The motor driving semiconductor device 10 outputs output voltages VUM, VVM, and VWM from output terminals. Details of the motor drive semiconductor device 10 will be described later.

  The coil 8 of the motor 5 is connected to the output terminal of the motor driving semiconductor device 10. The shunt resistor Rs is disposed between the lower arm switching element in the motor driving semiconductor device 10 and the ground potential GND. The shunt resistor Rs is used, for example, to monitor the current value of the current flowing through the switching element.

  The high voltage power supply voltage detection circuit 15 is connected to the high voltage power supply voltage VDC and outputs information on the high voltage power supply voltage VDC as a high voltage power supply voltage signal Vh. In the example of FIG. 1, the high voltage power supply voltage VDC is converted into a low voltage and output using two resistors connected in series.

  The temperature detection circuit 16 outputs a temperature signal Vt including temperature information to the control semiconductor. In FIG. 1, the temperature detection circuit 16 includes a resistor and a thermistor that is a temperature detection element. Based on the temperature signal Vt, the control semiconductor device 7 performs overheat protection, for example, by reducing the current flowing through the motor coil or stopping the motor when the temperature becomes abnormally high. With this overheat protection function, for example, malfunction or destruction of the motor driving semiconductor device 10 or the control semiconductor device 7 at an abnormally high temperature can be prevented.

  When overheating protection of the control semiconductor device 7 is performed using the temperature detection circuit 16, the thermistor is preferably arranged near the control semiconductor device 7. Some thermistors have a resistance value having a positive temperature dependence, a resistance value has a negative temperature dependence, and a resistance value changes abruptly at a certain temperature. Any thermistor may be used. Not only the thermistor but also a diode or a Si semiconductor temperature sensor can be used as the temperature detection element.

In FIG. 1, the control semiconductor device 7, the motor drive semiconductor device 10, the high-voltage power supply voltage detection circuit 15, the temperature detection circuit 16, and the shunt resistor Rs are arranged on the motor-embedded substrate 6.
However, these may be arranged on the first substrate 4.

  When the embodiment of FIG. 1 is applied to a fan motor that blows air to a heat exchanger of an outdoor unit of an air conditioner, for example, the first substrate 4 is a main substrate of the outdoor unit, and the motor 5 is a fan motor of the outdoor unit. It is.

  Next, details of the motor drive semiconductor device 10 will be described. An example of a detailed view of the motor driving semiconductor device 10 is shown in FIG. In FIG. 2, T1 to T6 are six switching elements for driving a three-phase motor. In this embodiment, IGBTs which are power semiconductor switching elements are used, but power MOSFETs or bipolar transistors may be used. In FIG. 2, D1 to D6 are freewheeling diodes connected in antiparallel to the respective IGBTs.

  In FIG. 2, P9 is a U-phase output terminal, P10 is a V-phase output terminal, and P11 is a W-phase output terminal. These output terminals are connected to the coil 8 of the motor.

  In FIG. 2, VUT is a U-phase upper arm control signal, which is input from the U-phase upper arm control signal input terminal P1, and is transmitted from the logic circuit LG1 → filter circuit FL1 → upper arm drive circuit KT → U-phase upper arm IGBT T1. Is done. In FIG. 2, VVT is a V-phase upper arm control signal, which is input from the V-phase upper arm control signal input terminal P2, and is transmitted as logic circuit LG1 → filter circuit FL1 → upper arm drive circuit KT → V phase upper arm IGBT T2. The In FIG. 2, VWT is a W-phase upper arm control signal, which is input from the W-phase upper arm control signal input terminal P3, and is transmitted as logic circuit LG1 → filter circuit FL1 → upper arm drive circuit KT → W phase upper arm IGBT T3. The In FIG. 2, VUB is a U-phase lower arm control signal, which is input from the U-phase lower arm control signal input terminal P4, and is transmitted as logic circuit LG1 → filter circuit FL1 → lower arm drive circuit KB → U-phase lower arm IGBT T4. The In FIG. 2, VVB is a V-phase lower arm control signal, which is input from the V-phase lower arm control signal input terminal P5, and is transmitted as logic circuit LG1 → filter circuit FL1 → lower arm drive circuit KB → V-phase lower arm IGBT T5. The In FIG. 2, VWB is a W-phase lower arm control signal, which is input from the W-phase lower arm control signal input terminal P6, and is transmitted as logic circuit LG1 → filter circuit FL1 → lower arm drive circuit KB → W-phase lower arm IGBT T6. The

  In FIG. 2, the charge pump circuit CH is a circuit that generates the power supply voltage VCP for driving the upper arm IGBT. Diodes D7 and D8 and capacitors C3 and C4 are external components for the charge pump circuit. The diodes D7 and D8 may be built in the motor driving semiconductor device 10. A clock signal VCL for operating the charge pump circuit CH is input from the clock signal input terminal P12 to the charge pump circuit CH. Although not shown in FIG. 1, for example, the control semiconductor device 7 outputs the clock signal VCL.

The internal power supply circuit 11 generates the power supply voltage VB of the control semiconductor device 7 based on the drive circuit power supply voltage Vcc. The power supply voltage VB of the control semiconductor device 7 is lower than the drive circuit power supply voltage Vcc. VB is used as a power supply voltage for the control semiconductor device 7 and also used as a power supply voltage in some circuits in the motor drive semiconductor device 10. The current polarity detection circuit 13 detects the U-phase current polarity, for example, and outputs the U-phase current polarity signal VUP from the current polarity signal output terminal P7. The current polarity signal may not be a U-phase current polarity signal, but may be a V-phase or W-phase current polarity signal.

The Vcc undervoltage detection circuit 14A monitors the drive circuit power supply voltage Vcc and outputs a low voltage detection signal to the fault circuit 14C when the drive circuit power supply voltage Vcc falls below a certain threshold voltage. The overcurrent detection circuit 14B issues an overcurrent detection signal to the fault circuit 14C when the voltage of the shunt resistor Rs exceeds a certain level. When the fault circuit 14C receives the Vcc low voltage detection signal from the Vcc undervoltage detection circuit 14A or the overcurrent detection signal from the overcurrent detection circuit 14B, the fault circuit 14C outputs an off signal to the logic circuit LG1 and also outputs a fault signal output terminal P8. Outputs a Fault signal Vf. When receiving the Vcc low voltage signal or the overcurrent detection signal, the fault circuit 14C outputs an off command signal to the logic circuit LG1. When an off command signal is input from the fault circuit 14C, the logic circuit LG1 outputs a signal for turning off all IGBTs regardless of H / L of the control signals VUT, VVT, VWT, VUB, VVB, and VWB.

  As described above, in the case of the present embodiment, the motor driving semiconductor device 10 turns off the switching element when detecting an abnormality such as an overcurrent or a Vcc low voltage. However, even when an abnormality is detected, the switching element is not turned off, the fact that the abnormality has occurred is output as a fault signal Vf to the control semiconductor device 7, and the control semiconductor device 7 outputs a control signal for turning off the switching element. May be.

  C1, C2, and C5 in FIG. 2 are power supply stabilizing capacitors. When the motor driving semiconductor device 10 is constituted by one semiconductor chip, a high voltage element and a low voltage element are mixed in the one semiconductor chip. Dielectric separation (DI separation), SOI, PN junction separation, or the like is used as a means for separating each element in the semiconductor chip.

  Next, details of the current polarity detection circuit 13 will be described. FIG. 3 is a first example of the current polarity detection circuit 13. FIG. 3 shows an example in which the current polarity detection circuit 13 detects the U-phase current polarity.

  As shown in FIG. 3, the inverter device includes a U-phase upper arm switching element T1, a U-phase lower arm switching element T4, a U-phase upper arm driving circuit K1, and a U-phase lower arm driving circuit K4. A coil 8 is connected to the midpoint between the U-phase upper arm switching element T1 and the U-phase lower arm switching element T4. A U-phase upper arm reflux diode D1 is connected in reverse parallel to the U-phase upper arm switching element T1, and a U-phase lower arm reflux diode D4 is connected in reverse parallel to the U-phase lower arm switching element T4. Yes.

The current polarity detection circuit 13 of this embodiment includes a level shift circuit L1 and a latch circuit F1. Level shift circuit L1 converts U-phase output voltage VUM to a lower voltage and outputs it. Specifically, when the U-phase output voltage VUM is substantially equal to the high-voltage power supply voltage VDC, a signal having a certain voltage level is output. Hereinafter, this is referred to as an “H” signal. When the U-phase output voltage VUM is substantially zero, a zero level voltage signal is output. Hereinafter, this is referred to as an “L” signal. The voltage level of the “H” signal may be a level at which the latch circuit F1 can detect the “H” signal.
For example, when the high voltage power supply voltage VDC changes, the voltage level of the “H” signal may change depending on the high voltage power supply voltage VDC as long as it is within a voltage range in which the latch circuit F1 can detect the “H” signal.

  In this embodiment, when both the U-phase upper arm switching element T1 and the U-phase lower arm switching element T4 are off, the output voltage VUL of the level shift circuit L1 is set at the rising timing of the U-phase lower arm control signal VUB ′. The U-phase current polarity is detected by monitoring.

  The latch circuit F1 inverts the output voltage VUL of the level shift circuit L1 at the rising timing of the U-phase lower arm control signal VUB ′ and outputs it as the U-phase current polarity signal VUP. The latch circuit F1 holds the previous signal until the next rise of the U-phase lower arm control signal VUB ′.

  FIG. 4 is an example of a timing chart of the current polarity detection circuit 13 shown in FIG. The operation of the current polarity detection circuit 13 of FIG. 3 will be described with reference to FIG. 4A shows the U-phase upper arm control signal VUT ′, and FIG. 4B shows the U-phase lower arm control signal VUB ′. 4C shows the operation of the U-phase upper arm switching element T1, and FIG. 4D shows the operation of the U-phase lower arm switching element T4. H is on and L is off. E of FIG. 4 shows IUM. The U-phase phase current IUM is a current that flows into the coil 8 from the U-phase output terminal. The polarity is positive when the current flows toward the coil 8, and the polarity is negative when the current flows from the coil 8. 4 indicates the U-phase output voltage VUM, G in FIG. 4 indicates the output voltage VUL of the level shift circuit L1, and H in FIG. 4 indicates the output voltage of the latch circuit F1. I in FIG. 4 indicates the timing of monitoring the current, that is, the timing at which the latch circuit F1 latches the output voltage VUL of the level shift circuit L1.

Comparing A and B in FIG. 4, it can be seen that there is a section (dead time) in which the U-phase upper arm control signal VUT ′ and the U-phase lower arm control signal VUB ′ are simultaneously turned off. This is provided to prevent the upper and lower arm switching elements from being turned on simultaneously.

As shown in I of FIG. 4, the timing of monitoring the current is the time t1, t2, t3, t4 when the U-phase lower arm control signal VUB ′ of B of FIG. 4 rises from “L” to “H”. As can be seen by comparing B and D in FIG. 4, the operation of the U-phase lower arm switching element T4 is slightly delayed with respect to the U-phase lower arm control signal VUB ′. Therefore, at the timing t1 when the U-phase lower arm control signal VUB ′ rises from “L” to “H”, the U-phase upper arm switching element T1 is off as shown in FIG. Thus, the U-phase lower arm switching element T4 is still off.

  When the U-phase current IUM in E of FIG. 4 is negative, that is, at time points t1 and t2, the current flows from the coil 8 to the motor drive power source through the U-phase upper arm return diode D1. Therefore, as shown in F of FIG. 4, the U-phase output voltage VUM is substantially equal to the high-voltage power supply voltage VDC.

  When the U-phase current IUM in E of FIG. 4 is positive, that is, at time points t3 and t4, the current flows from the ground potential GND to the coil 8 through the U-phase lower arm return diode D4. Therefore, as shown in FIG. 4F, the U-phase output voltage VUM is almost zero.

  The output voltage VUL of the level shift circuit L1 of G in FIG. 4 is obtained by reducing the U-phase output voltage VUM of F of FIG. Therefore, the amplitude of the output voltage VUL is smaller than the amplitude of the U-phase output voltage VUM, but the waveform is the same.

  The U-phase current polarity signal VUP of H of FIG. 4 is obtained by inverting the output voltage VUL of the level shift circuit L1 at the rising timing of the U-phase lower arm control signal VUB ′ of B of FIG.

Comparing E and I in FIG. 4, it can be seen that when the U-phase current IUM changes from negative to positive, the U-phase current polarity signal VUP changes from “L” to “H”. The timing when the U-phase current polarity signal VUP changes from “L” to “H” is the time point t3 when the U-phase lower arm control signal VUB ′ first rises when the U-phase current IUM changes to positive.

  In FIG. 3, the output voltage VUL of the level shift circuit L1 is directly input to the latch circuit F1. However, even if one or more stages of MOS inverters are added in between, a circuit having the same function can be obtained.

  In FIG. 3, the lower arm control signal VUB 'is directly input to the latch circuit F1. However, even if one or more stages of MOS inverters are added in between, a circuit having the same function can be obtained.

  3 and 4 show an example of detecting the current polarity of the U phase, but the same applies to the case of detecting the current of the other phase.

  FIG. 5 is a second example of the current polarity detection circuit 13. FIG. 5 shows an example in which the current polarity detection circuit 13 detects the U-phase current polarity. As shown in FIG. 5, the inverter device includes a U-phase upper arm switching element T1, a U-phase lower arm switching element T4, a U-phase upper arm driving circuit K1, and a U-phase lower arm driving circuit K4. A coil 8 is connected to the midpoint between the U-phase upper arm switching element T1 and the U-phase lower arm switching element T4. A U-phase upper arm reflux diode D1 is connected in reverse parallel to the U-phase upper arm switching element T1, and a U-phase lower arm reflux diode D4 is connected in reverse parallel to the U-phase lower arm switching element T4. Yes. A shunt resistor Rs is connected between the U-phase lower arm switching element T4 and the ground potential GND.

  The current polarity detection circuit 13 illustrated in FIG. 5 includes a comparator CM1 and a latch circuit F2. The comparator CM1 determines whether the voltage VUR of the shunt resistor Rs is positive or negative. The latch circuit F2 inverts the comparator output voltage VUC at the falling timing of the U-phase lower arm control signal VUB ′ and outputs it as the U-phase current polarity signal VUP. The latch circuit F2 holds the previous signal until the next timing when the U-phase lower arm control signal VUB ′ falls.

  In FIG. 5, when the U-phase upper arm switching element T1 is off and the U-phase lower arm switching element T4 is on, the direction of the current flowing through the shunt resistor Rs is monitored at the falling timing of the U-phase lower arm control signal VUB ′. By doing so, the U-phase current polarity is detected.

FIG. 6 is an example of a timing chart of the current polarity detection circuit 13 shown in FIG. The operation of the current polarity detection circuit 13 of FIG. 5 will be described with reference to FIG. 6A shows the upper arm control signal VUT ′, and FIG. 6B shows the lower arm control signal VUB ′. 6C shows the operation of the U-phase upper arm switching element T1, and FIG. 6D shows the operation of the U-phase lower arm switching element T4. H is on and L is off. E of FIG. 6 shows the U-phase phase current IUM. The U-phase phase current IUM is a current that flows into the coil 8 from the U-phase output terminal. The polarity is positive when the current flows toward the coil 8, and the polarity is negative when the current flows out from the coil 8. F in FIG. 6 indicates the voltage VUR of the shunt resistor Rs, G in FIG. 6 indicates the output voltage VUC of the comparator CM1, and H in FIG. 6 indicates the output voltage of the latch circuit F2. I in FIG. 6 indicates the timing of monitoring the current, that is, the timing at which the latch circuit F2 latches the output voltage VUC of the comparator CM1.

  As indicated by I in FIG. 6, the timing for monitoring the current is the time point t1, t2, t3, t4 when the U-phase lower arm control signal VUB ′ falls from “H” to “L”. As can be seen by comparing B and D in FIG. 6, the operation of the U-phase lower arm switching element T4 is slightly delayed with respect to the U-phase lower arm control signal VUB ′. Therefore, at the timing t1 when the U-phase lower arm control signal VUB ′ falls from “H” to “L”, the U-phase upper arm switching element T1 is off as shown in FIG. 6C. As shown, the U-phase lower arm switching element T4 is still on.

  When the U-phase current IUM of E in FIG. 6 is negative, that is, at time points t1 and t2, the U-phase lower arm switching element T4 is on as shown in D of FIG. The current flows to the ground potential GND through the lower arm switching element T4 and the shunt resistor Rs. Therefore, as shown in FIG. 6F, the voltage VUR of the shunt resistor Rs becomes positive.

  When the U-phase current IUM in E of FIG. 6 is positive, that is, at time points t3 and t4, the U-phase upper arm switching element T1 is off as shown in C of FIG. The current flows to the coil 8 through the shunt resistor Rs and the U-phase lower arm return diode D4. Therefore, as shown in F of FIG. 6, the voltage VUR of the shunt resistor Rs becomes negative.

  The comparator output voltage VUC of G in FIG. 6 shows the positive / negative determination result of the voltage VUR of the shunt resistor Rs. When the voltage VUR of the shunt resistor Rs is positive, the comparator output voltage VUC is “H”, and when the voltage VUR of the shunt resistor Rs is negative, the comparator output voltage VUC is “L”.

  The U-phase current polarity signal VUP of H in FIG. 6 is obtained by inverting the comparator output voltage VUC at the falling timing of the U-phase lower arm control signal VUB ′.

  Comparing E and H in FIG. 6, it can be seen that when the U-phase current IUM changes from negative to positive, the U-phase current polarity signal VUP changes from “L” to “H”. The timing when the U-phase current polarity signal VUP changes from “L” to “H” is the time point t3 when the U-phase lower arm control signal VUB ′ first falls after the U-phase current IUM changes to positive.

  In FIG. 5, the output voltage VUC of the comparator CM1 is directly input to the latch circuit F2. However, even if one or more stages of MOS inverters are added in between, a circuit having the same function can be obtained. In FIG. 5, the lower arm control signal VUB ′ is directly input to the latch circuit F2. However, even if one or more stages of MOS inverters are added in between, a circuit having the same function can be obtained. 5 and 6 show an example in which the current polarity of the U phase is detected, but the same applies to the case of detecting the current of the other phase.

  Next, control performed by the control semiconductor device 7 will be described. FIG. 7 is a timing chart showing an example of a control method according to the present invention. 7A shows a carrier signal (triangular wave) Vca, a U-phase modulation signal Vu, a V-phase modulation signal Vv, and a W-phase modulation signal Vw. 7B shows a U-phase upper arm control signal VUT, FIG. 7C shows a U-phase lower arm control signal VUB, FIG. 7D shows a V-phase upper arm control signal VVT, and FIG. 7E shows a V-phase lower arm control signal. VVB, F in FIG. 7 indicates a W-phase upper arm control signal VWT, and G in FIG. 7 indicates a W-phase lower arm control signal VWB. H in FIG. 7 indicates a U-phase phase current IUM, a V-phase phase current IVM, and a W-phase phase current IWM. 7 is U-phase current polarity signal VUP, J in FIG. 7 is U-phase induced voltage Vi, K in FIG. 7 is U-phase magnetic pole position signal VHU, L in FIG. 7 is V-phase magnetic pole position signal VHV, M represents the rotation speed signal FG.

In order to drive the motor with a sine wave, first, sinusoidal modulation signals Vu, Vv, Vw are generated. Control signals VUT, VUB, VVT, VVB, VWT, and VWB are generated by comparing the sinusoidal modulation signals Vu, Vv, and Vw with the carrier signal (triangular wave) Vca. By driving the switching element based on these control signals and applying a phase voltage to the coil 8, sinusoidal phase currents IUM, IVM, and IWM flow through the coil 8. In order to cause the sinusoidal phase currents IUM, IVM, and IWM to flow through the coil 8, the modulation signals Vu, Vv, and Vw do not have to be sinusoidal, and voltages Vu−Vv, Vv−Vw, and Vw− between the modulation signals are not necessary. Vu may be a sine wave. As an example of a sine wave driving method in which the modulation signals Vu, Vv, and Vw are not sinusoidal,
There are a so-called HIP modulation method and a so-called two-phase modulation method. Since these methods have the merit that the modulation rate can be made larger than 1, they are generally used well. The sine wave driving method performed by the control semiconductor device 7 may be a method in which the modulation signals Vu, Vv, Vw such as the HIP modulation method and the two-phase modulation method are not sine waves.

  Next, the phase control method of the motor phase current will be described. The current polarity detection circuit 13 generates a certain one-phase current polarity signal. In the example of FIG. 7, a U-phase current polarity signal VUP is generated. In order to maximize the efficiency of the motor, it is necessary to control the phase difference between the phase current and the induced voltage.

  The phase of the phase current that maximizes the efficiency is a phase that matches or substantially matches the phase of the induced voltage. The phase difference between the induced voltage and the magnetic pole position signal is a certain value determined by the mounting position of the Hall IC. In FIG. 7, the phase difference between the U-phase induced voltage Vi and the U-phase magnetic pole position signal VHU is represented by Δθa.

  The motor efficiency can be maximized by controlling the phase difference between the current polarity signal VUP and the magnetic pole position signal VHU. In FIG. 7, the phase difference between the U-phase current polarity signal VUP and the U-phase magnetic pole position signal is denoted by Δθb. The control semiconductor device 7 calculates Δθb from the current polarity signal VUP and the magnetic pole position signal VHU, and advances the phase of the modulation signals Vu, Vv, and Vw when Δθb deviates from a predetermined value that maximizes the motor efficiency. By delaying or delaying, the phase of the phase voltage applied to the coil 8 is controlled, and Δθb is brought closer to the optimum value. At this time, the relative positions of the modulation signals Vu, Vv, Vw of each phase are of course maintained at an electrical angle of 120 degrees. By such control, based on the current polarity signal for one phase, the phase currents of all three phases can be brought into an optimum phase. However, for reasons such as increasing the accuracy of current phase control, the same control may be performed using a two-phase or three-phase current polarity signal.

  If the phase control of the motor phase current is performed by controlling the phase of the motor phase voltage by the method described above based on the current polarity signal, it is not necessary to use an expensive current sensor, and an advanced microcomputer is used. Thus, it is not necessary to perform a complicated calculation process, and the motor torque ripple can be reduced by the sine wave drive method and the motor can be operated efficiently by current phase control at a relatively low cost. The current polarity signal has a signal rise timing from “L” to “H” and a signal fall timing from “H” to “L”. The control semiconductor device 7 may perform control using only the rising edge or the falling edge of the current polarity signal. Therefore, the current polarity signal may include a large error as long as one of the rising edge and the falling edge has accuracy of accuracy required for control.

  FIG. 11 is a simplified representation of FIG. 1 showing the present embodiment. In FIG. 11, components other than the control semiconductor device 7, the coil 8, the Hall IC 9, the motor drive semiconductor device 10, the current polarity detection circuit 13 and the wiring are omitted and not shown. As shown in FIG. 11, the present embodiment shows a case where the motor driving semiconductor device 10 includes a current polarity detection circuit 13.

  In this embodiment, the motor driving semiconductor device 10 may include a part of the current polarity detection circuit 13 and the other part may be disposed outside the motor driving semiconductor device 10. As an example of this, the circuit of FIG. 5 is used for the current polarity detection circuit 13, the motor driving semiconductor device 10 includes the comparator CM1 and the latch circuit F2, and a discrete resistor is used as the shunt resistor Rs. is there.

  For example, when the circuit system of FIG. 3 is used for the current polarity detection circuit 13, the current polarity detection circuit 13 includes a level shift circuit L1. Since a voltage as high as the high-voltage power supply voltage VDC is applied to the level shift circuit L1, the level shift circuit L1 needs to be a high breakdown voltage circuit. Therefore, in such a case, when the current polarity detection circuit 13 is provided in the motor driving semiconductor device 10, the cost can be reduced to the lowest cost.

  This embodiment is shown in FIG. FIG. 12 is a simplified representation corresponding to FIG. 11 of the first embodiment. In the present embodiment, the current polarity detection circuit 13 shown in the first embodiment has a small number of circuit components as shown in FIGS. 3 and 5, and therefore the current polarity detection circuit 13 is controlled by the motor drive semiconductor device 10 and the control. The semiconductor device 7 is disposed outside. The rest is the same as in the first embodiment.

  This embodiment is shown in FIG. FIG. 13 is a simplified representation corresponding to FIG. 11 of the first embodiment. VUPA in FIG. 13 is a voltage including current polarity information. In the present embodiment, when the current polarity is detected using the operation principle of the circuit of FIG. 3, for example, the output voltage VUL of the level shift circuit L1 is input to the control semiconductor device 7 as the voltage VUPA including the current polarity information. The function of the latch circuit F1 is performed in the control semiconductor device 7. In the present embodiment, when the current polarity is detected using the operation principle of the circuit of FIG. 5, for example, the voltage VUR of the shunt resistor Rs is input to the control semiconductor device 7 as the voltage VUPA including the current polarity information, and the comparator The functions of CM1 and latch circuit F2 are performed in the control semiconductor device 7. The processing in the control semiconductor 7 is performed by a circuit in the control semiconductor device 7, software, or both the circuit and software. Others are the same as in the first embodiment.

FIG. 14 shows this embodiment. FIG. 14 is a simplified representation corresponding to FIG. 11 of the first embodiment.
In this embodiment, the motor drive semiconductor device 10 is divided into a predrive semiconductor device 10A having a current polarity detection circuit 13 and a motor drive switching element 10B. In the configuration of the present embodiment, a motor with a larger capacity can be driven by using the motor driving switching element 10B as a large current switching element.

  FIG. 15 is a diagram showing details of the pre-drive semiconductor device 10A and the motor driving switching element 10B. The switching elements T1 ′ to T6 ′ use NMOSFETs in this embodiment, but may be IGBTs or bipolar transistors. In the case where a power MOSFET is used, a PMOSFET may be used for the upper arm switching elements T1 ′ to T3 ′. When a power MOSFET is used for the switching elements T1 ′ to T6 ′, a parasitic diode inside the MOSFET may be used as the freewheeling diodes D1 ′ to D6 ′.

  FIG. 15 shows the motor drive semiconductor device 10 of FIG. 2 divided into a pre-drive semiconductor device 10A and a motor drive switching element 10B, and the others are the same as those in FIG.

  In FIG. 15, the predrive unit is configured by one predrive semiconductor device 10 </ b> A sealed in one package with a resin, for example, an epoxy-based resin compounded with a filler such as silica. May be configured. As such an example, there is one constituted by three pre-drive semiconductor devices for one phase. In addition, when a PMOSFET or PNP transistor is used as the upper arm switching element, the predrive unit can be realized with a very simple circuit configuration. Therefore, a bipolar transistor, a resistor, or the like is used without using an IC for the predrive unit. It is also possible to configure with a discrete circuit.

  In the example of FIG. 15, the motor driving switching element 10 </ b> B is sealed with resin in one package, but may be configured with a plurality of packages. For example, when the upper arm switching element and the lower arm switching element are sealed in separate packages with resin and configured with two packages, or when all the six switching elements are separate packages, In some cases, the upper arm switching element and the lower arm switching element are accommodated in a single package and configured by a total of three packages.

FIG. 16 shows this embodiment. FIG. 16 is a simplified representation corresponding to FIG. 11 of the first embodiment. In this embodiment, the control semiconductor chip 7 'and the motor driving semiconductor chip 10' are arranged in one package. Reference numeral 17 in FIG. 16 denotes a one-package motor driving semiconductor device incorporating a control semiconductor chip. The wiring between the control semiconductor chip 7 'and the motor driving semiconductor chip 10' is connected by, for example, wire bonding inside the package.
The function of the control semiconductor chip 7 ′ is the same as that of the control semiconductor device 7 of the first embodiment, and the function of the motor drive semiconductor chip 10 ′ is the same as that of the motor drive semiconductor device 10 of the first embodiment.

The motor driving semiconductor chip 10 'generates heat and increases in temperature when the motor is driven. In order to suppress the temperature rise of the control semiconductor chip 7 ', the control semiconductor chip 7' and the motor driving semiconductor chip 10 'are arranged on separate stages. In FIG. 16, the current polarity detection circuit 13 is included in the motor driving semiconductor chip 10 ′, but the current polarity may be detected in the control semiconductor chip 7 ′. In FIG. 16, the motor driving unit has a one-chip configuration of the motor driving semiconductor chip 10 ′, but the motor driving unit may be configured by a plurality of chips. In either case, since the motor drive unit and the microcomputer are configured in one package, the size can be reduced as compared with the case of two or more packages. The control semiconductor chip 7 'may be a general-purpose microcomputer chip or a motor drive IC chip.

FIG. 17 shows this embodiment. FIG. 17 is a simplified representation corresponding to FIG. 11 of the first embodiment. In this embodiment, the control semiconductor chip 7 'and the predrive semiconductor chip 10A' are arranged in one package. Reference numeral 18 in FIG. 17 denotes a one package pre-drive semiconductor device with a built-in control semiconductor chip. The wiring between the control semiconductor chip 7 'and the pre-drive semiconductor chip 10A' is connected, for example, by wire bonding inside the package. In this embodiment, the motor driving switching element 10B is a large current switching element, so that a large capacity motor can be driven. The function of the control semiconductor chip 7 'is the same as that of the control semiconductor device 7 of the first embodiment, and the function of the predrive semiconductor chip 10A' is the same as that of the predrive semiconductor device 10A of the fourth embodiment. In FIG. 17, the current polarity detection circuit 13 is included in the pre-drive semiconductor chip 10A ′, but the current polarity may be detected in the control semiconductor chip 7 ′. Since the predrive semiconductor chip 10A ′ does not include a switching element, the temperature rise of the predrive semiconductor chip 10A ′ is smaller than that of the motor drive semiconductor chip 10 ′ of FIG. Therefore, the control semiconductor chip 7 'and the predrive semiconductor chip 10A' may be arranged on the same stage.

In FIG. 8, the example of the structure of the motor 5 of a present Example is shown. The motor shown in FIG. 8 is a three-phase motor, and the control semiconductor device 7, the motor driving semiconductor device 10, the high-voltage power supply voltage detection circuit 15, the temperature detection circuit 16, and the shunt resistor shown in FIG. Rs and Hall IC 9 are arranged on the motor-embedded substrate 6. In the motor 5 of the present embodiment, the coil 8 is fitted in the lower housing casing 5B. The permanent magnet rotor 22 is installed inside the coil with an appropriate gap so as not to touch the coil 8. The motor built-in substrate 6 is installed on the upper part of the permanent magnet rotor 22. The Hall IC 9 disposed on the motor-embedded substrate 6 is disposed on the surface of the permanent magnet rotor 22 (the lower surface in FIG. 8) so that the magnetic pole position of the permanent magnet rotor 22 can be easily detected. For example, the control semiconductor device 7, the high-voltage power supply voltage detection circuit 15, the temperature detection circuit 16, and the shunt resistor Rs are arranged on the surface of the permanent magnet rotor 22 (the lower surface in FIG. 8). 10 is arranged on the surface opposite to the permanent magnet rotor 22 (upper surface in FIG. 8).

When the temperature detection circuit 16 is used for temperature detection of the control semiconductor device 7, the thermistor in the temperature detection circuit 16 is disposed near the control semiconductor device 7. A coil connection terminal 21 is disposed on the motor-embedded substrate 6 and the coil 8 is connected by soldering. The wiring 20 is connected to the motor built-in substrate 6 by soldering. The lead-out wiring 20 includes a VDC wiring, a Vcc wiring,
It consists of five lines: Vsp wiring, FG wiring, and GND wiring. The motor housing upper part 5A is installed on the motor-embedded substrate 6 like a lid. Therefore, in a state where the motor is assembled, the motor-embedded substrate 6 is disposed inside the motor casing composed of the motor casing upper part 5A and the motor casing lower part 5B.

  The motor 5 may have a structure in which the coil 8 is molded instead of the motor housing lower part 5B. The figure at this time is shown in FIG. 18C in FIG. 18 is a molded coil. Others are the same as FIG.

  The motor 5 may have a structure in which the coil 8 and the motor built-in substrate 6 are molded instead of using the motor housing upper part 5A and the motor housing lower part 5B. The figure at this time is shown in FIG. FIG. 19 shows the completed state of the motor, unlike FIG. 8 and FIG. A coil 8 and a motor built-in substrate 6 are molded in the mold part 5D. The motor built-in substrate 6 has a control semiconductor device 7, a motor drive semiconductor device 10, and a high-voltage power supply voltage detection circuit, as in FIG. 15, a temperature detection circuit 16, a shunt resistor Rs, and a Hall IC 9 are arranged.

  In this example, the motor described in Example 7 was applied to an air conditioner. The air conditioner of the present embodiment includes a compressor that compresses the refrigerant and an outdoor heat exchanger, a compressor drive motor that drives the compressor, and an outdoor unit fan motor that blows air to the outdoor heat exchanger. The indoor unit includes an indoor heat exchanger and an indoor unit fan motor that blows air to the indoor heat exchanger, and performs cooling or heating by switching the flow direction of the refrigerant with a valve.

  When a conventional 120-degree energization motor is used as an outdoor unit fan motor of an air conditioner, noise due to motor vibration is generated. In order to reduce this noise, vibration-proof rubber is used in the 120-degree conduction motor. Anti-vibration rubber is used, for example, between a fixed portion for fixing a fan motor to an outdoor unit body, and between a permanent magnet and a shaft of a permanent magnet rotor or between a shaft and a fan. In this embodiment, since the torque ripple of the motor is reduced and the vibration of the motor is reduced by the sine wave driving method, the noise can be reduced without using a vibration isolating rubber. In order to further reduce the noise, it is of course possible to use a vibration-proof rubber in the motor according to the present invention.

  Further, the motor described in the seventh embodiment may be used as the indoor unit fan motor of the air conditioner. In this case, since the motor vibration is small, an operation with less noise can be realized as in the case of the outdoor unit.

FIG. 3 is an explanatory diagram of the first embodiment. FIG. 3 is a detailed explanatory diagram of the motor drive semiconductor device according to the first embodiment. FIG. 3 is an explanatory diagram of a current polarity detection circuit according to the first embodiment. 4 is a timing chart of the current polarity detection circuit shown in FIG. FIG. 3 is an explanatory diagram of another current polarity detection circuit according to the first embodiment. 6 is a timing chart of another current polarity detection circuit shown in FIG. 5. 3 is a timing chart illustrating an example of a control method according to the first embodiment. Explanatory drawing of the 1st structural example of the motor of Example 7. FIG. Explanatory drawing of a prior art. The timing chart of a prior art. Explanatory drawing which expressed FIG. 1 simply. Explanatory drawing of Example 2. FIG. Explanatory drawing of Example 3. FIG. Explanatory drawing of Example 4. FIG. FIG. 6 is a detailed explanatory diagram of a pre-drive semiconductor device and a motor driving switching element according to Embodiment 4; Explanatory drawing of Example 5. FIG. Explanatory drawing of Example 6. FIG. Explanatory drawing of the 2nd structural example of the motor of Example 7. FIG. Explanatory drawing of the 3rd structural example of the motor of Example 7. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Commercial power supply 2 Power supply circuit 3 Microcomputer 4 1st board | substrate 5,5C Motor 5A Motor housing | casing upper part 5B Motor housing | casing lower part 5C Molded coil 5D Mold part 6, 6C Motor built-in board 7 Control semiconductor device 7 ' Control semiconductor chip 8 Coil 9, 9C Hall IC
DESCRIPTION OF SYMBOLS 10 Motor drive semiconductor device 10 'Motor drive semiconductor chip 10A Pre-drive semiconductor device 10B Motor drive switching element 10C 120 degree conduction type motor drive semiconductor device 11 Internal power supply circuit 13 Current polarity detection circuit 13A Current polarity detection function 14 Protection Circuit 14A Vcc undervoltage detection circuit 14B Overcurrent detection circuit 14C Fault circuit 15 High voltage power supply voltage detection circuit 16 Temperature detection circuit 17 One-package motor drive semiconductor device with built-in control semiconductor chip 18 One-package predrive semiconductor device with built-in control semiconductor chip 20 Lead-out wiring 21 Coil connection terminal 22 Permanent magnet rotor T1, T1 'U-phase upper arm switching element T2, T2' V-phase upper arm switching element T3, T3 'W-phase upper arm switching element T4, T4' U Lower arm switching elements T5, T5 'V-phase lower arm switching elements T6, T6' W-phase lower arm switching elements D1, D1 'U-phase upper arm return diode D2, D2' V-phase upper arm return diode D3, D3 'W-phase Upper arm return diode D4, D4 'U phase lower arm return diode D5, D5' V phase lower arm return diode D6, D6 'W phase lower arm return diode KT Upper arm drive circuit KB Lower arm drive circuit FL1 Filter circuit K1 U phase Upper arm drive circuit K4 U phase lower arm drive circuit LG1 Logic circuit CH Charge pump circuit Rs Shunt resistors C1, C2, C5 Power stabilization capacitors C3, C4 Charge pump circuit capacitors D7, D8 Charge pump circuit diode P1 U phase Upper arm control signal input terminal P2 Control signal input terminal P3 W-phase upper arm control signal input terminal P4 U-phase lower arm control signal input terminal P5 V-phase lower arm control signal input terminal P6 W-phase lower arm control signal input terminal P7 Current polarity signal output terminal P8 Signal output terminal P9 U phase output terminal P10 V phase output terminal P11 W phase output terminal P12 Clock signal input terminal L1 Level shift circuit F1, F2 Latch circuit CM1 Comparator VDC High voltage power supply voltage Vcc Drive circuit power supply voltage Vsp Speed command signal FG Rotation Number signal GND Ground potential VHU, VHU 'U-phase magnetic pole position signal VHV, VHV' V-phase magnetic pole position signal VHW 'W-phase magnetic pole position signal Vm Microcomputer power supply voltage VB Control semiconductor power supply voltage VUM, VUM' U-phase output voltage VVM, VVM ′ V phase output voltage VWM, VWM ′ W phase output voltage V T, VUT 'U-phase upper arm control signal VVT V-phase upper arm control signal VWT W-phase upper arm control signal VUB, VUB' U-phase lower arm control signal VVB V-phase lower arm control signal VWB W-phase lower arm control signal VUP U Phase current polarity signal VUPA Voltage Vf including current polarity information Fault signal Vh High voltage power supply voltage signal Vt Temperature signal VCL Clock signal VCP Upper arm IGBT drive power supply voltage VUL Level shift circuit output voltage IUM U phase current IVM V phase Current IWM W-phase current VUR Shunt resistor voltage VUC Comparator output voltage t1, t2, t3, t4 Current monitoring timing Vca Carrier signal Vu U-phase modulation signal Vv V-phase modulation signal Vw W-phase modulation signal Vi U-phase induced voltage

Claims (15)

Six switching elements for driving a three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, a drive circuit for driving the six switching elements, A motor driving semiconductor device comprising one or a plurality of semiconductor chips resin-sealed in one package, including six control signal input terminals for inputting control signals for controlling on / off of each of the six switching elements. In
A part or all of a current polarity detection circuit for detecting a current polarity of a phase current of the three-phase motor and outputting a current polarity signal;
A current polarity signal output terminal for outputting the current polarity signal from the motor driving semiconductor device to the outside;
A level shift circuit for converting the voltage of the output terminal connected to the terminal of the coil of the motor to a voltage lower than this and outputting the voltage, the current polarity detection circuit;
A motor drive semiconductor device comprising: a latch circuit that holds information on a voltage output from the level shift circuit at a timing when both the upper arm switching element and the lower arm switching element are off. A driving circuit for driving six switching elements for driving a three-phase motor, six output terminals for outputting six signals for driving each of the six switching elements from the driving circuit, and the six In a pre-drive semiconductor device in which one or a plurality of semiconductor chips are resin-sealed in one package, including six control signal input terminals for inputting six control signals for controlling on / off of the switching elements of
The pre-drive semiconductor device is
A part or all of the current polarity detection circuit that detects the current polarity of the motor phase current and outputs a current polarity signal;
A current polarity signal output terminal for outputting the current polarity signal from the motor driving semiconductor device to the outside;
The current polarity detection circuit is
A level shift circuit that converts the voltage of the terminal connected to the terminal of the motor coil into a voltage lower than this, and outputs it;
A pre-drive semiconductor device comprising: a latch circuit that holds information on a voltage output from the level shift circuit at a timing when both the upper arm switching element and the lower arm switching element are off . Six switching elements for driving a three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, a drive circuit for driving the six switching elements, In a one-package motor driving semiconductor device comprising at least one input terminal for inputting a magnetic pole position signal of a rotor of a three-phase motor,
The one-package motor driving semiconductor device is
A part or all of a current polarity detection circuit for detecting a current polarity of a phase current of the three-phase motor and outputting a current polarity signal;
The magnetic pole position signal and the current polarity signal are inputted, and the phase current phase of the motor is controlled by controlling the phase voltage phase of the motor based on the phase difference between the magnetic pole position signal and the current polarity signal. A control semiconductor chip that outputs six control signals for on / off control of the switching elements,
The current polarity detection circuit is
A level shift circuit that converts the voltage of the output terminal connected to the terminal of the motor coil to a voltage lower than this, and outputs it,
A semiconductor device for driving a one-package motor, comprising: a latch circuit that holds information on a voltage output from the level shift circuit at a timing when both the upper arm switching element and the lower arm switching element are off. The one-package motor driving semiconductor device according to claim 3,
The one-package motor driving semiconductor device is
A motor driving semiconductor chip in which the six switching elements, the driving circuit, and part or all of the current polarity detection circuit are integrated in one semiconductor chip;
It has two chips, a control semiconductor chip,
6. A one-package motor driving semiconductor device, wherein six control signals output from the control semiconductor chip are input to the motor driving semiconductor chip. A driving circuit for driving six switching elements for driving a three-phase motor, six output terminals for outputting signals for driving the six switching elements from the driving circuit, and a magnetic pole position of a rotor of the motor In a pre-drive semiconductor device having at least one input terminal for inputting a signal,
The pre-drive semiconductor device is
A part or all of a current polarity detection circuit for detecting a current polarity of a phase current of the three-phase motor and outputting a current polarity signal;
The magnetic pole position signal and the current polarity signal are inputted, and the phase current phase of the motor is controlled by controlling the phase voltage phase of the motor based on the phase difference between the magnetic pole position signal and the current polarity signal. A control semiconductor chip that outputs six control signals for on / off control of the switching elements,
The current polarity detection circuit is
A level shift circuit that converts the voltage of the terminal connected to the terminal of the motor coil into a voltage lower than this, and outputs it;
A pre-drive semiconductor device comprising: a latch circuit that holds information on a voltage output from the level shift circuit at a timing when both the upper arm switching element and the lower arm switching element are off. In a motor drive device that drives a three-phase motor,
The motor drive device includes a motor drive semiconductor device, a control semiconductor device, and at least one magnetic pole position detector,
The motor driving semiconductor device is
Six switching elements for driving the three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, and a drive circuit for driving the six switching elements; One or a plurality of semiconductor chips each having six control signal input terminals for inputting control signals for controlling on / off of each of the six switching elements are sealed in one package with resin;
A part or all of a current polarity detection circuit that detects a current polarity of a phase current of the three-phase motor and outputs a current polarity signal, and a current polarity signal for outputting the current polarity signal from the motor driving semiconductor device to the outside Output terminal,
The current polarity detection circuit converts a voltage of an output terminal connected to a terminal of a motor coil to a voltage lower than this, and outputs a timing when both the upper arm switching element and the lower arm switching element are off. And a latch circuit for holding information on the voltage output from the level shift circuit,
The control semiconductor device includes:
The magnetic pole position signal output from the magnetic pole position detector and the current polarity signal output from the motor driving semiconductor device are input, and the phase voltage phase of the motor is determined based on the phase difference between the magnetic pole position signal and the current polarity signal. By controlling, the phase current phase of the motor is controlled, and six control signals for on / off control of each of the six switching elements are output,
6. A motor drive device, wherein six control signals output from the control semiconductor device are inputted to six control input terminals of the motor drive semiconductor device. In a three-phase motor including a motor drive device including a motor drive semiconductor device, a control semiconductor device, and at least one magnetic pole position detector,
The motor driving semiconductor device is
Six switching elements for driving the three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, and a drive circuit for driving the six switching elements; One or a plurality of semiconductor chips each having six control signal input terminals for inputting control signals for controlling on / off of each of the six switching elements are sealed in one package with resin;
A part or all of a current polarity detection circuit that detects a current polarity of a phase current of the three-phase motor and outputs a current polarity signal, and a current polarity signal for outputting the current polarity signal from the motor driving semiconductor device to the outside Output terminal,
The current polarity detection circuit converts a voltage of an output terminal connected to a terminal of a motor coil to a voltage lower than this, and outputs a timing when both the upper arm switching element and the lower arm switching element are off. And a latch circuit for holding information on the voltage output from the level shift circuit,
The control semiconductor device comprises:
The magnetic pole position signal output from the magnetic pole position detector and the current polarity signal output from the motor driving semiconductor device are input, and the phase voltage phase of the motor is determined based on the phase difference between the magnetic pole position signal and the current polarity signal. By controlling, the phase current phase of the motor is controlled, and six control signals for on / off control of each of the six switching elements are output,
A three-phase motor, wherein six control signals output from the control semiconductor device are input to six control input terminals of the motor drive semiconductor device. Built-in motor driving device comprising six switching elements for driving a three-phase motor, a driving circuit for driving the six switching elements, a control semiconductor device, and at least one magnetic pole position detector In a three-phase motor,
The motor driving device is
The voltage of the output terminal connected to the terminal of the motor coil is converted to a voltage lower than this, and the information on the voltage converted to the low voltage is converted at a timing when both the upper arm switching element and the lower arm switching element are off. It has a current polarity detection function that detects the current polarity of the phase current of the three-phase motor by holding it,
The control semiconductor device receives the magnetic pole position signal output from the magnetic pole position detector, and based on the phase difference between the magnetic pole position signal and the current polarity signal detected by the current polarity detection function, A three-phase motor characterized by controlling a phase current phase of a motor by controlling a phase voltage phase and outputting six control signals for controlling on / off of each of the six switching elements. In a three-phase motor incorporating a motor driving semiconductor device and at least one magnetic pole position detector,
The motor driving semiconductor device is a one package motor driving semiconductor device,
Six switching elements for driving the three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, and a drive circuit for driving the six switching elements; And at least one input terminal for inputting a magnetic pole position signal of the rotor of the three-phase motor,
A current polarity detection circuit that detects a current polarity of a phase current of the three-phase motor and outputs a current polarity signal, and converts a voltage of an output terminal connected to a terminal of a motor coil to a lower voltage and outputs the voltage. A part or all of a current polarity detection circuit comprising: a level shift circuit; and a latch circuit that holds information on the voltage output from the level shift circuit at a timing when both the upper arm switching element and the lower arm switching element are off. ,
The magnetic pole position signal and the current polarity signal are inputted, and the phase current phase of the motor is controlled by controlling the phase voltage phase of the motor based on the phase difference between the magnetic pole position signal and the current polarity signal. A three-phase motor comprising: a control semiconductor chip that outputs six control signals for on / off control of each switching element. In a motor drive device that drives a three-phase motor,
The motor driving device includes a pre-drive semiconductor device, six switching elements that drive the three-phase motor, a control semiconductor device, and at least one magnetic pole position detector.
The pre-drive driving device is
A driving circuit for driving six switching elements for driving a three-phase motor, six output terminals for outputting six signals for driving each of the six switching elements from the driving circuit, and the six One or a plurality of semiconductor chips each having six control signal input terminals for inputting six control signals for on / off control of the switching elements are resin-sealed in one package. A current polarity detection circuit that detects the current polarity of the current and outputs a current polarity signal, the level shift circuit that converts the voltage of the terminal connected to the motor coil terminal to a lower voltage and outputs the voltage, and the upper arm A latch circuit for holding information on the voltage output from the level shift circuit at a timing when both the switching element and the lower arm switching element are off. Comprising a part or the whole of the flow polarity detection circuit, and a current polarity signal output terminal for outputting the current polarity signal to the outside from the motor driving semiconductor device,
The control semiconductor device comprises:
The magnetic pole position signal output from the magnetic pole position detector and the current polarity signal output from the pre-drive semiconductor device are input, and the phase voltage phase of the motor is controlled based on the phase difference between the magnetic pole position signal and the current polarity signal. To control the phase current phase of the motor, and output six control signals for on / off control of each of the six switching elements,
6. The motor drive device according to claim 6, wherein the six control signals output from the control semiconductor device are input to six control input terminals of the pre-drive semiconductor device. Air is sent to an outdoor heat exchanger or an indoor heat exchanger of an air conditioner including a compressor that compresses the refrigerant, an outdoor heat exchanger that performs heat exchange of the refrigerant, and an indoor heat exchanger that performs heat exchange of the refrigerant. In the fan motor,
The fan motor is the three-phase motor according to claim 7. Air is sent to an outdoor heat exchanger or an indoor heat exchanger of an air conditioner including a compressor that compresses the refrigerant, an outdoor heat exchanger that performs heat exchange of the refrigerant, and an indoor heat exchanger that performs heat exchange of the refrigerant. In the fan motor,
The fan motor is the three-phase motor according to claim 8. Air is sent to an outdoor heat exchanger or an indoor heat exchanger of an air conditioner including a compressor that compresses the refrigerant, an outdoor heat exchanger that performs heat exchange of the refrigerant, and an indoor heat exchanger that performs heat exchange of the refrigerant. In the fan motor,
The fan motor is the three-phase motor according to claim 9. In a current polarity detection circuit for detecting the polarity of the phase current of one phase of a three-phase motor driven by six switching elements,
A level shift circuit for reducing the voltage of the output terminal connected to the terminal of the coil of the motor, and a latch circuit for inputting the output signal of the level shift circuit,
The latch circuit has a timing at which either the control signal of the upper arm switching element of the corresponding phase or the control signal of the lower arm switching element of the corresponding phase changes from the off signal to the on signal.
A current polarity detection circuit which holds an output signal of the level shift circuit. Six switching elements for driving a three-phase motor, three output terminals for applying an output voltage to each of three terminals of the coil of the three-phase motor, a drive circuit for driving the six switching elements, A motor driving semiconductor device comprising one or a plurality of semiconductor chips resin-sealed in one package, including six control signal input terminals for inputting control signals for controlling on / off of each of the six switching elements. In
A part or all of a current polarity detection circuit for detecting a current polarity of a phase current of the three-phase motor and outputting a current polarity signal;
A current polarity signal output terminal for outputting the current polarity signal from the motor driving semiconductor device to the outside;
The current polarity detection circuit is
A level shift circuit that converts the voltage of the output terminal connected to the terminal of the motor coil to a voltage lower than this, and outputs it,
A latch circuit for inputting information on the voltage output by the level shift circuit,
The latch circuit outputs the output of the level shift circuit at a timing at which either the control signal of the upper arm switching element of the corresponding phase or the control signal of the lower arm switching element of the corresponding phase changes from the off signal to the on signal. A semiconductor device for driving a motor, which holds a signal.

Images