JP4865101B2 - Semiconductor light emitting device - Google Patents

Description

  Embodiments described herein relate generally to a semiconductor light emitting device.

  Light emitting devices that emit blue light using blue or near-ultraviolet LEDs (Light Emitting Diodes) as a light source have been used for backlighting light sources for lighting devices and image display devices, and there is a demand for higher efficiency. It is getting stronger. Conventionally, surface-mounted light-emitting devices in which a light-emitting element chip is mounted on a lead frame and resin-molded have been commercialized, but the support substrate of the light-emitting layer is laser lifted off for the purpose of further improving the light extraction efficiency. The technique which peels by a method is proposed (patent document 1).

  When the substrate is peeled off by the laser lift-off method, the portion formed at the interface with the substrate in the semiconductor layer including the light emitting layer is rapidly pyrolyzed into a low melting point metal and a gas, and the shock wave generated thereby causes the semiconductor layer and the substrate to be separated. May take damage.

US Pat. No. 7,241,667

  Provided is a semiconductor light emitting device capable of preventing a large stress from acting on a semiconductor layer.

According to the embodiment, the semiconductor light emitting device includes a semiconductor layer, a p-side electrode and an n-side electrode, an insulating film, a p-side contact portion, an n-side contact portion, a p-side wiring layer, and an n-side wiring layer. And a p-side metal pillar and an n-side metal pillar. The semiconductor layer has a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface of the semiconductor layer where the light emitting layer is provided. The n-side electrode is provided on the second surface of the semiconductor layer where the light emitting layer is not provided. The insulating film is more flexible than the semiconductor layer, and is provided on the second surface and the side surface continuing from the first surface of the semiconductor layer. The insulating film has a first opening reaching the p-side electrode and a second opening reaching the n-side electrode. The insulating film is provided between the p-side metal pillar and the n-side metal pillar. The p-side contact portion is provided in the first opening and reaches the p-side electrode. The n-side contact portion is provided in the second opening and reaches the n-side electrode. The p-side wiring layer is provided in the insulating film and is connected to the p-side electrode through the p-side contact portion. The n-side wiring layer is provided in the insulating film and is connected to the n-side electrode through the n-side contact portion. The p-side metal pillar is provided on the p-side wiring layer. The n-side metal pillar is provided on the n-side wiring layer.

  A semiconductor light emitting device capable of preventing a large stress from acting on a semiconductor layer is provided.

1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a step following FIG. 1. The schematic diagram which shows the planar layout of the separation groove | channel and the irradiation range of a laser beam in the manufacturing method of the semiconductor light-emitting device concerning embodiment of this invention. FIG. 6 is a schematic cross-sectional view showing a method for manufacturing a semiconductor light emitting device according to another embodiment of the present invention. FIG. 10 is a schematic cross-sectional view showing a method for manufacturing a semiconductor light emitting device according to still another embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 2D is a schematic cross-sectional view of the semiconductor light emitting device according to the embodiment of the present invention. FIG. 2D shows, for example, two semiconductor light emitting devices separated from the wafer state.

  The semiconductor light emitting device according to this embodiment includes a light emitting element 12 and a wiring portion. The light emitting element 12 includes a semiconductor layer 12a and a semiconductor layer 12b. The semiconductor layer 12b has a structure in which a light emitting layer is sandwiched between a p-type cladding layer and an n-type cladding layer. The semiconductor layer 12a is, for example, n-type and functions as a current horizontal path. However, the conductivity type of the semiconductor layer 12a is not limited to n-type and may be p-type.

  The surface of the semiconductor layer 12 a functions as the light extraction surface 60. The semiconductor layer 12b is not provided on a part of the surface opposite to the light extraction surface 60 in the semiconductor layer 12a. An n-side electrode 13 is formed in that portion. A p-side electrode 14 is formed on the surface of the semiconductor layer 12b opposite to the surface on which the semiconductor layer 12a is provided.

  Opposite sides of the light extraction surface 60 in the semiconductor layer 12 a and the semiconductor layer 12 b are covered with the insulating film 15. The light extraction surface 60 is exposed from the insulating film 15. An n-side wiring layer 18 and a p-side wiring layer 19 are separately formed on the surface of the insulating film 15 opposite to the light extraction surface 60.

  The n-side electrode 13 and the n-side wiring layer 18 are electrically connected via the n-side contact portion 16. The p-side electrode 14 and the p-side wiring layer 19 are electrically connected via the p-side contact portion 17.

  An n-side metal pillar 21 is provided under the n-side wiring layer 18. A p-side metal pillar 22 is provided under the p-side wiring layer 19. The periphery of the n-side metal pillar 21, the periphery of the p-side metal pillar 22, the n-side wiring layer 18 and the p-side wiring layer 19 are covered with a resin 20.

  On the lower end surface exposed from the resin 20 in the n-side metal pillar 21 and the p-side metal pillar 22, an external connection terminal 23 made of a solder ball, a metal bump or the like and connected to an external circuit is provided.

  The semiconductor layer 12 a is electrically connected to the external connection terminal 23 through the n-side electrode 13, the n-side contact portion 16, the n-side wiring layer 18, and the n-side metal pillar 21. The semiconductor layer 12 b is electrically connected to the external connection terminal 23 through the p-side electrode 14, the p-side contact portion 17, the p-side wiring layer 19, and the p-side metal pillar 22.

  Even if the semiconductor layers 12a and 12b are thin, the mechanical strength can be maintained by increasing the thickness of the n-side metal pillar 21, the p-side metal pillar 22 and the resin 20. Further, when each semiconductor light emitting device is mounted on a circuit board or the like via the external connection terminal 23, the stress applied to the light emitting element 12 via the external connection terminal 23 is caused by the n-side metal pillar 21 and the p-side metal pillar 22. It can be relaxed by absorption.

  Next, with reference to FIGS. 1-3, the manufacturing method of the semiconductor light-emitting device concerning this embodiment is demonstrated.

  First, as illustrated in FIG. 1A, a stacked body of a semiconductor layer 12 a and a semiconductor layer 12 b is formed on the main surface of the substrate 1. After the semiconductor layer 12b is formed on the entire surface of the semiconductor layer 12a, it is patterned into a plurality of parts using a resist mask (not shown). For example, when the light emitting layer is a nitride semiconductor, the semiconductor layers 12a and 12b can be crystallized on the substrate 1 such as sapphire.

  Next, a part of the semiconductor layer 12a is removed by RIE (Reactive Ion Etching), laser ablation, or the like to form the separation groove 31 as shown in FIG. The semiconductor layer 12 a and the semiconductor layer 12 b are separated into a plurality of light emitting elements 12 on the main surface of the substrate 1 by the separation groove 31. The separation grooves 31 are formed in a lattice shape as shown in FIG. The planar shape of each light emitting element 12 is formed in a substantially square shape, and a separation groove 31 surrounds the periphery thereof in a frame shape.

  A p-side electrode 14 is formed on the surface of the semiconductor layer 12b. An n-side electrode 13 is formed on a portion of the surface of the semiconductor layer 12a that is not covered with the semiconductor layer 12b.

  Next, as illustrated in FIG. 1C, an insulating film 15 that covers the semiconductor layer 12 a and the semiconductor layer 12 b is formed on the substrate 1. The insulating film 15 is made of an organic material such as photosensitive polyimide. Thereby, the isolation trench 31 is filled with the insulating film 15.

  Next, after an opening reaching the n-side electrode 13 and an opening reaching the p-side electrode 14 are formed in the insulating film 15, an n-side contact portion 16 is provided in the opening reaching the n-side electrode 13. A p-side contact portion 17 is provided in the reaching opening. Further, an n-side wiring layer 18 connected to the n-side contact portion 16 and a p-side wiring layer 19 connected to the p-side contact portion 17 are formed on the insulating film 15.

  The n-side contact portion 16, the p-side contact portion 17, the n-side wiring layer 18 and the p-side wiring layer 19 are formed by, for example, a plating method. That is, after a seed metal (not shown) is formed on the inner wall of the opening formed in the insulating film 15 and the surface of the insulating film 15, the metal is deposited.

  Next, as shown in FIG. 1D, an n-side metal pillar 21 is provided on the n-side wiring layer 18, and a p-side metal pillar 22 is provided on the p-side wiring layer 19. A resin 20 is filled around the n-side metal pillar 21 and the p-side metal pillar 22. The resin 20 covers the periphery of the n-side wiring layer 18, the p-side wiring layer 19, the n-side metal pillar 21, and the p-side metal pillar 22. The upper surfaces of the n-side metal pillar 21 and the p-side metal pillar 22 are exposed from the resin 20. The resin 20 has a configuration in which, for example, a filler is mixed into an epoxy resin, a silicone resin, a fluororesin, or the like. The resin 20 is also provided on the insulating film 15 on the separation groove 31.

  As materials for the n-side contact portion 16, the p-side contact portion 17, the n-side wiring layer 18, the p-side wiring layer 19, the n-side metal pillar 21, and the p-side metal pillar 22, copper, gold, nickel, silver, or the like is used. be able to. Among these, copper having good thermal conductivity, high migration resistance, and excellent adhesion to the insulating film 15 is more preferable.

  After the structure of FIG. 1 (d) is obtained, the process of FIG. 2 is continued. In FIG. 2, the positional relationship between the substrate 1 and the light emitting element 12 in the vertical direction is shown in the opposite direction to FIG. 1.

  FIG. 2A shows a step of peeling the substrate 1 by a laser lift-off method. The laser beam L is irradiated toward the semiconductor layer 12a from the opposite surface (back surface) side of the main surface of the substrate 1 on which the light emitting element 12 is formed. The laser light L is transparent to the substrate 1 (has transparency) and has a wavelength that becomes an absorption region for the semiconductor layer 12a.

  When the laser beam L reaches the interface between the substrate 1 and the semiconductor layer 12a, the semiconductor layer 12a near the interface absorbs the energy of the laser beam L and is thermally decomposed. For example, when the semiconductor layer 12a is GaN, it decomposes into Ga and nitrogen gas. Ga remains on the semiconductor layer 12a side. By this thermal decomposition, a minute gap is formed between the substrate 1 and the semiconductor layer 12a, and the substrate 1 and the semiconductor layer 12a are separated.

  The laser beam L is irradiated, for example, for each light emitting element 12. At this time, the edge of the irradiation range of the laser beam L is positioned in the separation groove 31. In FIG. 2A and FIG. 3B, the edge 50 of the irradiation range of the laser light L is indicated by a broken line. A substantially square region inside the edge portion 50 is a one-shot laser beam irradiation range.

  During the irradiation with the laser beam L, vaporized gas is generated due to the rapid thermal decomposition of the semiconductor layer 12a. At this time, the semiconductor layers 12a and 12b may be impacted by a high-pressure gas, and cracks, crystal transition, crushing, and the like may occur in the semiconductor layers 12a and 12b. The gas generated by the thermal decomposition of the semiconductor layer 12a can be diffused in the surface direction through a gap generated between the substrate 1 and the semiconductor layer 12a. However, since the outside of the irradiation range of the laser beam L is in a solid state without being heated by the laser, gas diffusion is regulated by the solid phase portion, and the gas pressure tends to increase at the edge 50. Further, due to an energy difference, a temperature difference, a phase difference, and the like between the irradiated portion and the unirradiated portion of the laser light L, a large stress is likely to act on the edge portion 50 in the irradiation range of the laser light L. Therefore, the semiconductor layers 12a and 12b are likely to be damaged particularly at the edge 50 in the irradiation range of the laser beam L.

  Therefore, in the present embodiment, the edge 50 of the irradiation range of the laser beam L is positioned in the separation groove 31 and the laser beam L is irradiated. The semiconductor layer 12a, 12b does not exist in the separation groove 31, and therefore the edge 50 of the irradiation range of the laser light L is not located in the semiconductor layer 12a, 12b. This can prevent the semiconductor layers 12a and 12b from being damaged.

  In addition, the isolation groove 31 is provided with an insulating film 15 such as polyimide, which is more flexible than the semiconductor layers 12a and 12b. The deformation of the insulating film 15 relieves stress, and the semiconductor layers 12a and 12b. It is possible to prevent a large stress from acting on the surface. Further, gas can be released through a gap between the substrate 1 and the insulating film 15 in the separation groove 31 caused by the deformation of the insulating film 15.

  Further, when the separation groove 31 is hollow, the difference in refractive index from the semiconductor layer 12a is large, so that the wavefront of the laser light L near the separation groove 31 is large and refracts toward the semiconductor layer 12a, resulting in a large electric field strength. Disturbed. Therefore, the intensity of the laser beam L is disturbed near the end of the semiconductor layer 12a, and the problem that the peeling condition of the substrate 1 by the laser lift-off method tends to become unstable may occur.

On the other hand, when the insulating film 15 is filled in the separation groove 31 as in the present embodiment, the refractive index difference is small, the wavefront bending of the laser light L is small, and the intensity distribution of the laser light L is reduced. Can be further stabilized, and the peeling condition can be prevented from becoming unstable.
The isolation trench 31 is preferably filled with the insulating film 15, but if the insulating film 15 is provided in the vicinity of the periphery of the semiconductor layer 12 a on the main surface of the substrate 1 even if it is not filled, the above described. The wavefront bending of the laser beam L due to the difference in refractive index is suppressed, and the effect that the intensity distribution is stabilized and the peeling condition is easily stabilized can be obtained.

  As described above, in the present embodiment, damage to the semiconductor layers 12a and 12b at the time of irradiation with the laser light L can be prevented. As a result, it is possible to prevent a decrease in light emission efficiency and light extraction efficiency and current leakage.

  Similarly, the other light emitting elements 12 are irradiated with the laser beam L so that the edge 50 in the irradiation range of the laser beam L is positioned in the separation groove 31 as shown in FIG. Thereby, also about the light emitting element 12, the board | substrate 1 and the semiconductor layer 12a can be isolate | separated, without the semiconductor layers 12a and 12b receiving damage.

  The irradiation of the laser beam L as described above is performed on all the light emitting elements 12 of the wafer, and the substrate 1 and the semiconductor layers 12a and 12b are separated over the entire wafer. Further, the laser beam L is also applied to the separation groove 31, whereby the adhesion between the insulating film 15 provided in the separation groove 31 and the substrate 1 is reduced. As a result, the substrate 1 can be peeled from the light emitting element 12. The area where the insulating film 15 and the substrate 1 are in contact with each other in the separation groove 31 is very small compared to the area of the entire wafer. Therefore, even if the insulating film 15 and the substrate 1 in the separation groove 31 are not completely separated, the substrate 1 can be peeled only by reducing the adhesion.

Further, the irradiation range of the laser beam L shown in FIG. 2A where the laser beam L has been irradiated first and the irradiation range of the laser beam L after that shown in FIG. 2B. The irradiation range of the laser beam L is slightly overlapped with the separation groove 31. As a result, an unirradiated portion of the laser light L is not generated in the insulating film 15 provided in the separation groove 31, the adhesion force between the insulating film 15 and the substrate 1 is reliably reduced, and the substrate 1 can be easily peeled off. To.
At this time, since the insulating film 15 is provided in the overlapped portion of the laser light L, the wavefront bending of the laser light L due to the difference in refractive index can be suppressed as compared with the case where the separation groove 31 is hollow. The effect is that the strength distribution is stabilized and the peeling conditions are easily stabilized.

  Alternatively, the adjacent irradiation ranges may not overlap with the separation groove 31. In this case, an unirradiated portion of the laser light L is generated in the insulating film 15 provided in the separation groove 31. Some unirradiated portions may be generated in the insulating film 15 to such an extent that the peeling of the substrate 1 is not affected.

  Further, by performing laser beam irradiation first from the light emitting element 12 on the outer peripheral side of the wafer, the insulating film 15 in the gap between the outer peripheral semiconductor layer 12a and the substrate 1 or in the separation groove 31 around the semiconductor layer 12a. Through the gap between the substrate 1 and the substrate 1, the gas generated when the light emitting element 12 on the inner peripheral side of the wafer is irradiated with laser light can be released to the space outside the wafer. That is, laser light irradiation is performed first from the outer peripheral side of the wafer, and gas escape paths leading to the outside of the wafer are sequentially connected to the inner peripheral side. Thereby, damage of each light emitting element 12 can be prevented over the whole wafer.

  Even if the separation groove 31 is filled with the insulating film 15, it becomes possible to release the gas pressure through a gap generated by the resin being deformed or being peeled off from the substrate 1 when the gas pressure is increased. It is possible to obtain an effect that damage to the layers 12a and 12b can be reduced.

  The irradiation with the laser light L is not limited to being performed for each light emitting element 12 separated by the separation groove 31, and may be performed for each of the plurality of light emitting elements 12. FIG. 3C shows an example in which one shot of laser light irradiation is performed on, for example, four light emitting elements 12. Also when irradiating each of the plurality of light emitting elements 12, the edge 50 of the irradiation range of the laser light L is positioned in the separation groove 31.

  After the substrate 1 is peeled off, as shown in FIG. 2C, solder balls, metal bumps, and the like that function as the external connection terminals 23 are formed at the lower ends of the n-side metal pillar 21 and the p-side metal pillar 22. Thereafter, the wafer is diced along the separation groove 31 and separated into pieces as shown in FIG. The unit to be singulated may be one for each light emitting element 12, or a plurality of light emitting elements 12 may be singulated as one block.

  Each process described above until dicing is performed in a lump in a wafer state, so that production at a low cost is possible. In addition, since a package structure including protective resin, wiring, electrodes, and the like is formed at the wafer level, it is easy to reduce the size of the semiconductor light emitting device so that the planar size of the semiconductor light emitting device is close to the planar size of the bare chip (light emitting element 12).

  Next, FIG. 4A shows that the edge 50 of the irradiation range of the laser light L is slightly closer to the inside of the semiconductor layer 12a side than the edge 12e of the semiconductor layer 12a adjacent to the separation groove 31 or its edge 12e. The positioned form is shown.

  When the laser beam L is irradiated, the semiconductor layers 12a and 12b are likely to be damaged at boundaries where energy, temperature, phase, and the like change greatly. Depending on the laser irradiation conditions and the irradiation object, the boundary where the energy, temperature, phase, etc. change greatly does not necessarily become the edge 50 of the irradiation range. The energy and heat of the laser beam L may be slightly applied to a portion outside the edge 50. In that case, the boundary where the energy, temperature, phase and the like greatly change is outside the edge 50 of the irradiation range.

  Therefore, in the embodiment shown in FIG. 4A, the edge portion 50 in the irradiation range of the laser light L is positioned slightly inside the semiconductor layer 12a side of the edge portion 12e of the semiconductor layer 12a or the edge portion 12e. The boundary where the energy, temperature, phase, etc. change greatly is positioned in the separation groove 31. Further, since the semiconductor layers 12a and 12b do not exist in the separation groove 31 where the boundary where energy, temperature, phase and the like change greatly is located, damage to the semiconductor layers 12a and 12b can be prevented.

  Further, since the insulating film 15 in the separation groove 31 does not reach the irradiation range of the laser light L, it is possible to suppress excessive energy and heat from acting on the insulating film 15 in the separation groove 31. As a result, it is possible to prevent a decrease in reliability due to the occurrence of cracks in the insulating film 15 and a situation in which the insulating film 15 is greatly deformed and stress is applied to the semiconductor layers 12a and 12b.

  Next, FIG. 4B shows a form in which the groove 32 is formed in the substrate 1. The groove 32 is formed in a portion of the substrate 1 that faces the separation groove 31. The grooves 32 are formed in a lattice shape over the entire wafer, for example, like the separation grooves 31 shown in FIG. The width of the groove 32 is smaller than the width of the separation groove 31, and the edge of the semiconductor layer 12 a does not cover the groove 32.

  During irradiation with the laser beam L, the gas generated at the interface between the substrate 1 and the semiconductor layer 12a can be released out of the wafer through the groove 32. At the time of irradiation with the laser beam L, the insulating film 15 in the separation groove 31 has a reduced adhesion or deformation with the substrate 1. As a result, the gas generated at the interface between the substrate 1 and the semiconductor layer 12 a can easily pass between the insulating film 15 and the substrate 1 and reach the groove 32.

  By forming the groove 32, the gas generated when the laser beam L is irradiated can be effectively released, and the gas pressure can be prevented from increasing in the vicinity of the light emitting element 12. In this case, the groove 32 for degassing has already been formed over the entire wafer without irradiating the laser beam from the outer peripheral side of the wafer. In addition, the generated gas can escape to the outside of the wafer through the groove 32.

  After the separation groove 31 is formed in the process shown in FIG. 1B described above, the groove 32 is formed in a portion facing the separation groove 31. Thereafter, an insulating film 15 is formed on the main surface of the substrate 1. The insulating film 15 is supplied to the main surface of the substrate 1 in a liquid or viscous state and then cured. Therefore, by making the width of the groove 32 as fine as 1 μm or less and using, for example, polyimide having a relatively high viscosity as the insulating film 15, the groove 32 can be prevented from being filled with the insulating film 15.

  Further, as shown in FIG. 4C, a groove 33 may be formed on the insulating film 15 side. The groove 33 is formed as a void in the insulating film 15 provided in the separation groove 31. The grooves 33 are also formed in a lattice shape over the entire wafer, like the separation grooves 31 shown in FIG. The width of the groove 33 is smaller than the width of the separation groove 31, and the edge of the semiconductor layer 12 a does not cover the groove 33.

  Also in this case, it is possible to release the gas generated at the interface between the substrate 1 and the semiconductor layer 12a to the outside of the wafer through the groove 33 when the laser beam L is irradiated. Further, even if the laser beam irradiation is not performed from the outer peripheral side of the wafer, since the groove 33 for degassing has already been formed over the entire wafer, even if the laser beam irradiation is first performed on the inner peripheral side of the wafer. The generated gas can be released out of the wafer through the groove 33.

  After the step of FIG. 1D, a void is formed in the insulating film 15 by performing laser ablation in which the insulating film 15 provided in the separation groove 31 is locally irradiated with laser light from the back side of the substrate 1. can do. The laser beam at this time has a narrower irradiation range than the laser beam L when the substrate 1 is peeled off, and is narrowed down in a spot shape. By this laser ablation, the groove 33 can be formed by vaporizing a part of the insulating film 15 provided in the separation groove 31. Therefore, it is desirable that at least a portion where the groove 33 is formed is made of a resin such as polyester, polycarbonate, or polyurethane that is vaporized by laser ablation. Since the groove 33 is formed over the entire wafer, the vaporized resin escapes out of the wafer through the groove 33.

  FIG. 5 shows another method of forming the separation groove for separating the semiconductor layer 12a.

  In this method, the process of forming the separation groove 31 is not performed at the stage shown in FIG. 1B, and the process proceeds to the process of FIG. Therefore, as shown in FIG. 5A, the semiconductor layer 12a remains connected without being separated.

  Then, as shown in FIG. 5B, laser ablation is performed in which the laser beam L ′ is irradiated locally from the back side of the substrate 1 only to the portion where the separation groove is formed. This laser beam L 'has a narrower irradiation range than the laser beam L when the substrate is peeled off, and is narrowed down in a spot shape. By this laser ablation, the semiconductor layer 12a is vaporized and removed. Thereby, a separation groove 34 for separating the semiconductor layer 12a is formed. Since the insulating film 15 is not provided in the separation groove 34, it also functions as an escape path for the gas generated by the irradiation of the laser light L when the substrate is peeled off. The separation groove 34 is also formed, for example, in a lattice shape over the entire wafer.

  Further, in order to surely completely separate the semiconductor layer 12a, it is desirable to remove a part of the insulating film 15 in contact with the semiconductor layer 12a in a portion where the separation groove 34 is formed by laser ablation. Therefore, it is desirable that the portion is made of a material that can be vaporized by laser ablation, such as the polyester, polycarbonate, and polyurethane described above. Further, by removing a part of the insulating film 15, the cross-sectional area of the path for allowing the gas to escape can be increased, and the gas can be efficiently released.

  When the substrate is peeled off, as shown in FIG. 5C, the laser beam L is irradiated so that the edge 50 in the irradiation range of the laser beam L is located in the separation groove 34 where the light emitting element 12 does not exist. Thereby, damage to the light emitting element 12 can be prevented. Furthermore, since the gas can escape through the separation groove 34 that is a void, an increase in gas pressure near the light emitting element 12 can be more effectively avoided.

  FIG. 6A shows a structure in which the side surfaces of the semiconductor layers 12a and 12b are covered with a passivation film 70 made of a dielectric material such as silicon oxide or silicon nitride. Thereby, it is possible to suppress the leakage current and to prevent a decrease in reliability due to oxidation of the side surfaces of the semiconductor layers 12a and 12b. By dividing the passivation film 70 in the separation groove 31, it is possible to prevent the impact when the substrate 1 is peeled off by the laser lift-off method from being propagated to the adjacent elements via the passivation film 70.

  Further, as shown in FIG. 6B, by forming the cavity 71 under the passivation film 70 at the position of the separation groove 31, it is possible to positively secure the escape path of the gas generated at the time of laser lift-off, due to the impact. Damage to the semiconductor layers 12a and 12b can be suppressed. The cavity 71 can be formed by forming a sacrificial layer in the separation groove 31 on the substrate 1 and removing the sacrificial layer by etching or the like.

  The embodiment of the present invention has been described above with reference to the drawings. However, the present invention is not limited to these. Even if those skilled in the art make various design changes with respect to the substrate, light emitting element, electrode, wiring layer, metal pillar, insulating film, resin material, size, shape, layout, etc., as long as they do not depart from the gist of the present invention. It is included in the scope of the present invention.

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 12 ... Light emitting element, 12a, 12b ... Semiconductor layer, 13 ... N side electrode, 14 ... P side electrode, 15 ... Insulating film, 18 ... N side wiring layer, 19 ... P side wiring layer, 20 ... Resin 21 ... n-side metal pillars, 22 ... p-side metal pillars, 31, 34 ... separation grooves, 50 ... edges of laser light irradiation range

Claims (8)

A semiconductor layer having a first surface, a second surface opposite to the first surface, and a light emitting layer;
A p-side electrode provided on the second surface of the portion of the semiconductor layer where the light emitting layer is provided;
An n-side electrode provided on the second surface of the semiconductor layer where the light emitting layer is not provided;
More flexible than the semiconductor layer, provided on the second surface and the side surface continuing from the first surface of the semiconductor layer, and reaching the first opening and the n-side electrode reaching the p-side electrode. An insulating film having a second opening ;
A p-side contact portion provided in the first opening and reaching the p-side electrode;
An n-side contact portion provided in the second opening and reaching the n-side electrode;
A p-side wiring layer provided in the insulating film and connected to the p-side electrode through the p-side contact portion;
An n-side wiring layer provided in the insulating film and connected to the n-side electrode through the n-side contact portion;
A p-side metal pillar provided on the p-side wiring layer;
An n-side metal pillar provided on the n-side wiring layer;
With
The semiconductor light emitting device, wherein the insulating film is provided between the p-side metal pillar and the n-side metal pillar. The insulating film is
A first insulating film provided between the second surface and the p-side wiring layer and between the second surface and the n-side wiring layer;
A resin covering the periphery of the p-side metal pillar and the periphery of the n-side metal pillar;
The semiconductor light emitting device according to claim 1, comprising:   The semiconductor light emitting device according to claim 2, wherein the first insulating film is a resin.   The semiconductor light emitting device according to claim 2, wherein the resin is one of an epoxy resin, a silicone resin, and a fluororesin.   The semiconductor light emitting device according to claim 1, wherein the insulating film is filled between the p-side metal pillar and the n-side metal pillar.   The semiconductor light-emitting device according to claim 1, wherein the semiconductor layer is a nitride-based semiconductor.   The end surface of the semiconductor layer on the first surface side of the insulating film provided on the side surface of the semiconductor layer is on the same plane as the first surface of the semiconductor layer. The semiconductor light emitting device according to any one of 1 to 6.   The planar shape of the semiconductor layer is a quadrangle, and the insulating film covering the side surface of the semiconductor layer surrounds the semiconductor layer in a frame shape. The semiconductor light-emitting device as described.

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