JP4858290B2 - 負荷駆動装置 - Google Patents
負荷駆動装置 Download PDFInfo
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- JP4858290B2 JP4858290B2 JP2007116133A JP2007116133A JP4858290B2 JP 4858290 B2 JP4858290 B2 JP 4858290B2 JP 2007116133 A JP2007116133 A JP 2007116133A JP 2007116133 A JP2007116133 A JP 2007116133A JP 4858290 B2 JP4858290 B2 JP 4858290B2
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Description
駆動用ICは、接合材を介して電極基板と接合される支持層と、支持層上に層間絶縁膜を介して形成されるシリコンからなるデバイス形成領域を含むデバイス層とを備えたSOI構造をなすものであり、支持層におけるデバイス形成領域に対応する部位は、電極基板の熱膨張係数と略同等の熱膨張係数を有する材料からなることを特徴とするものである。
負荷を駆動する少なくとも一つの出力パワーデバイスと、
出力パワーデバイスと配線で接続されており、出力パワーデバイスを駆動する駆動用ICと、を備える負荷駆動装置であって、
出力パワーデバイス及び駆動用ICは、同一の電極基板に実装され、
出力パワーデバイス及び駆動用ICにおける電極基板との実装面とは反対面側に、放熱性を有する放熱板を備え、
放熱板は、駆動用ICに対応する位置に開口を備えることを特徴とするものである。
駆動用ICは、接合材を介してIC用電極基板と接合される支持層と、支持層上に層間絶縁膜を介して形成されるシリコンからなるデバイス形成領域を含むデバイス層とを備えたSOI構造をなすものであり、支持層におけるデバイス形成領域に対応する部位は、IC用電極基板の熱膨張係数と略同等の熱膨張係数を有する材料からなることを特徴とするものである。
まず、第1の実施の形態について説明する。第1の実施の形態においては、負荷駆動装置をEHV用インバータシステムに適用した場合を例として説明する。
次に、本発明の第2の実施の形態について説明する。図7は、本発明の第2の実施の形態おける半導体モジュールの概略構成を示す図面であり、(a)は透視図であり、(b)は(a)のDD断面図である。図8は、本発明の第2の実施の形態の変形例における半導体モジュールの概略構成を示す断面図である。
次に、本発明の第3の実施の形態について説明する。図9は、本発明の第3の実施の形態おける半導体モジュールの概略構成を示す図面であり、(a)は透視図であり、(b)は(a)のEE断面図である。図10は、本発明の第3の実施の形態の変形例における半導体モジュールの概略構成を示す透視図である。図11は、本発明の第3の実施の形態のその他の変形例における半導体モジュールの概略構成を示す透視図である。
次に、本発明の第4の実施の形態について説明する。図12は、本発明の第4の実施の形態おける半導体モジュールの概略構成を示す図面であり、(a)は透視図であり、(b)は(a)のFF断面図である。図13は、本発明の第4の実施の形態の変形例における半導体モジュールの概略構成を示す断面図である。
次に、本発明の第5の実施の形態について説明する。図14は、本発明の第5の実施の形態における半導体モジュールの概略構成を示す図面であり、(a)は透視図であり、(b)は(a)のGG断面図であり、(c)は(a)のHH断面図である。
次に、本発明の第6の実施の形態について説明する。図15は、本発明の第6の実施の形態における半導体モジュールの概略構成を示す断面図である。
Claims (18)
- 負荷を駆動する少なくとも一つの出力パワーデバイスと、
前記出力パワーデバイスと配線で接続されており、当該出力パワーデバイスを駆動する駆動用ICと、
を備える負荷駆動装置であって、
前記出力パワーデバイス及び前記駆動用ICは、同一の電極基板に実装され、
前記駆動用ICは、接合材を介して前記電極基板と接合される支持層と、当該支持層上に層間絶縁膜を介して形成されるシリコンからなるデバイス形成領域を含むデバイス層とを備えたSOI構造をなすものであり、前記支持層における前記デバイス形成領域に対応する部位は、前記電極基板の熱膨張係数と略同等の熱膨張係数を有する材料からなることを特徴とする負荷駆動装置。 - 前記電極基板には、前記出力パワーデバイスに接続される整流素子も実装されることを特徴とする請求項1に記載の負荷駆動装置。
- 前記駆動用ICは、前記出力パワーデバイスの異常を検出する検出手段と、当該検出手段による検出結果に基づいて当該出力パワーデバイスを保護する保護手段とを備えることを特徴とする請求項1又は請求項2に記載の負荷駆動装置。
- 前記電極基板は、放熱性を有することを特徴とする請求項1乃至請求項3のいずれかに記載の負荷駆動装置。
- 前記出力パワーデバイス及び前記駆動用ICにおける前記電極基板との実装面とは反対面側に、放熱性を有する放熱板を備えることを特徴とする請求項1乃至請求項4のいずれかに記載の負荷駆動装置。
- 前記駆動用ICは、前記放熱板と対向する側に当該放熱板の熱膨張係数と略同等の熱膨張係数を有する材料からなる配線を備えることを特徴とする請求項5に記載の負荷駆動装置。
- 前記駆動用ICは、前記出力パワーデバイスを介して前記電極基板に実装されることを特徴とする請求項1乃至請求項6のいずれかに記載の負荷駆動装置。
- 前記放熱板は、前記駆動用ICに対応する位置に開口を備えることを特徴とする請求項5乃至請求項7のいずれかに記載の負荷駆動装置。
- 負荷を駆動する少なくとも一つの出力パワーデバイスと、
前記出力パワーデバイスと配線で接続されており、当該出力パワーデバイスを駆動する駆動用ICと、
を備える負荷駆動装置であって、
前記出力パワーデバイス及び前記駆動用ICは、同一の電極基板に実装され、
前記出力パワーデバイス及び前記駆動用ICにおける前記電極基板との実装面とは反対面側に、放熱性を有する放熱板を備え、
前記放熱板は、前記駆動用ICに対応する位置に開口を備えることを特徴とする負荷駆動装置。 - 前記放熱板は、少なくとも前記パワーデバイスと電気的に接続され、前記パワーデバイスの第2の電極基板を兼ねることを特徴とする請求項5乃至請求項9のいずれかに記載の負荷駆動装置。
- 負荷を駆動する少なくとも一つの出力パワーデバイスと、
前記出力パワーデバイスと配線で接続されており、当該出力パワーデバイスを駆動する駆動用ICと、
を備える負荷駆動装置であって、
前記出力パワーデバイスはパワーデバイス用電極基板に実装され、前記駆動用ICは前記パワーデバイス用電極基板とは別体のIC用電極基板に実装され、前記出力パワーデバイス及び前記駆動用ICは、それぞれ前記パワーデバイス用電極基板及び前記IC用電極基板に実装された状態で樹脂にて一体的に封止されてパッケージ化され、
前記駆動用ICは、接合材を介して前記IC用電極基板と接合される支持層と、当該支持層上に層間絶縁膜を介して形成されるシリコンからなるデバイス形成領域を含むデバイス層とを備えたSOI構造をなすものであり、前記支持層における前記デバイス形成領域に対応する部位は、前記IC用電極基板の熱膨張係数と略同等の熱膨張係数を有する材料からなることを特徴とする負荷駆動装置。 - 前記出力パワーデバイスに接続される整流素子も前記出力パワーデバイス及び前記駆動用ICと共に一つにパッケージ化されることを特徴とする請求項11に記載の負荷駆動装置。
- 前記整流素子は、前記駆動用IC上に搭載されることを特徴とする請求項12に記載の負荷駆動装置。
- 前記駆動用ICは、前記出力パワーデバイスの異常を検出する検出手段と、当該検出手段による検出結果に基づいて当該出力パワーデバイスを保護する保護手段とを備えることを特徴とする請求項11乃至請求項13のいずれかに記載の負荷駆動装置。
- 前記パワーデバイス用電極基板及び前記IC用電極基板は、放熱性を有することを特徴とする請求項11乃至請求項14のいずれかに記載の負荷駆動装置。
- 前記出力パワーデバイスにおける前記パワーデバイス用電極基板との実装面とは反対面側に、放熱性を有する放熱板を備えることを特徴とする請求項11乃至請求項15のいずれかに記載の負荷駆動装置。
- 前記放熱板は、前記パワーデバイスと電気的に接続され、前記パワーデバイスの第2の電極を兼ねることを特徴とする請求項16に記載の負荷駆動装置。
- 前記パワーデバイス用電極基板は少なくとも一部が前記樹脂から外部に露出するように配置し、前記IC用電極基板は前記樹脂の内部に配置し、前記パワーデバイス用電極基板における前記樹脂から外部に露出した部分に接触するように導電性の放熱部材を設けることを特徴とする請求項11乃至請求項17のいずれかに記載の負荷駆動装置。
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