[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP4851214B2 - Package substrate division method - Google Patents

Package substrate division method Download PDF

Info

Publication number
JP4851214B2
JP4851214B2 JP2006083737A JP2006083737A JP4851214B2 JP 4851214 B2 JP4851214 B2 JP 4851214B2 JP 2006083737 A JP2006083737 A JP 2006083737A JP 2006083737 A JP2006083737 A JP 2006083737A JP 4851214 B2 JP4851214 B2 JP 4851214B2
Authority
JP
Japan
Prior art keywords
cutting
cutting blade
package substrate
dividing
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006083737A
Other languages
Japanese (ja)
Other versions
JP2007258590A (en
Inventor
高志 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2006083737A priority Critical patent/JP4851214B2/en
Priority to US11/723,639 priority patent/US7344960B2/en
Publication of JP2007258590A publication Critical patent/JP2007258590A/en
Application granted granted Critical
Publication of JP4851214B2 publication Critical patent/JP4851214B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

本発明は、デバイス側に突出して電極が形成された分割予定ラインによって複数のデバイスが区画され形成されたパッケージ基板を、切削ブレードによって切削し個々のパッケージデバイスに分割するとともに電極を各パッケージデバイス毎に分極するパッケージ基板の分割方法に関するものである。   The present invention cuts a package substrate on which a plurality of devices are partitioned and formed by a dividing line in which electrodes are formed so as to protrude toward the device side by using a cutting blade to divide the package substrate into individual package devices, and to separate the electrodes for each package device. The present invention relates to a method for dividing a package substrate that is polarized.

従来から、IC,LSI等のデバイスが形成されたパッケージ基板は、ダイシング装置などの分割装置によって個々のパッケージデバイスに分割され、携帯電話、パソコン等の電子機器に利用される。   Conventionally, a package substrate on which devices such as IC and LSI are formed is divided into individual package devices by a dividing device such as a dicing device, and is used for electronic devices such as mobile phones and personal computers.

ここで、デバイスは、例えばQFN(Quad Flat Non-leaded Package)と称される技術によってパッケージングされる。QFNと称されるこの技術は、デバイスが配設される領域を区画する分割予定ラインに沿って複数の電極が形成された厚みが150μm程度の金属枠体と、分割予定ラインによって区画された領域に配設された複数のデバイスと、複数のデバイスが配設された側に樹脂が充填されて形成された厚みが500μm程度の樹脂層と、でデバイスをパッケージングするというものである。   Here, the device is packaged by a technique called QFN (Quad Flat Non-leaded Package), for example. This technique, called QFN, has a metal frame having a thickness of about 150 μm in which a plurality of electrodes are formed along a planned division line that divides a region where devices are arranged, and a region defined by the planned division line. The device is packaged with a plurality of devices disposed on the substrate and a resin layer having a thickness of about 500 μm formed by filling the resin on the side where the plurality of devices are disposed.

このようなQFNによって構成されたパッケージ基板は、パッケージの樹脂充填工程後のダイシング工程で切削ブレードによって分割予定ラインを切削することにより個々のデバイス毎に分割される(例えば、特許文献1参照)。   The package substrate constituted by such QFN is divided into individual devices by cutting a division line by a cutting blade in a dicing process after the resin filling process of the package (see, for example, Patent Document 1).

特開2003−124421号公報(図1)Japanese Patent Laying-Open No. 2003-124421 (FIG. 1) 特開2005−39088号公報JP 2005-39088 A

しかしながら、ダイシング装置の切削手段に装着された切削ブレードを分割予定ラインに位置づけて分割予定ラインを切削して個々のパッケージデバイス毎に分割すると、柔らかくて延性を有する電極の切断部にバリが発生して隣接する電極同士が短絡するという問題がある。また、電極の切削端部が盛り上がりデバイスの品質が低下するという問題がある。   However, if the cutting blade mounted on the cutting means of the dicing machine is positioned on the planned dividing line and the planned dividing line is cut and divided into individual package devices, burrs are generated in the soft and ductile electrode cutting part. There is a problem that adjacent electrodes are short-circuited. Moreover, there is a problem that the cutting edge of the electrode is raised and the quality of the device is lowered.

ここで、切削ブレードによる分割予定ラインの切削速度を低下させてゆっくり切削すれば、切断部におけるバリの発生を抑制し得るものの、バリの発生をなくすことはできない。また、切削速度を低下させる分、パッケージデバイスの生産性が低下してしまう。   Here, if the cutting speed of the line to be divided by the cutting blade is reduced and the cutting is performed slowly, the generation of burrs at the cut portion can be suppressed, but the generation of burrs cannot be eliminated. In addition, the productivity of the package device is reduced by the reduction in the cutting speed.

また、切削ブレードで切削した後に、切削ブレードよりも軟質で同等以上の幅を有するバリ除去用の切削ブレード等により切削部分をなぞることによりバリを除去するようにした対応策もある(例えば、特許文献2参照)。しかしながら、特許文献2のものは、一旦発生したバリを除去するためのバリ除去工程を備えるもので、バリ除去を完全に行うためには、バリ除去工程を極力丁寧に行う必要があり、パッケージデバイスの生産性が低下してしまう。   There is also a countermeasure that removes burrs by tracing the cutting portion with a cutting blade for removing burrs that is softer than the cutting blade and has a width equal to or greater than that after cutting with the cutting blade (for example, patents) Reference 2). However, Patent Document 2 includes a burr removal process for removing a burr once generated. In order to completely remove the burr, it is necessary to perform the burr removal process as carefully as possible. Productivity will be reduced.

本発明は、上記に鑑みてなされたものであって、分割予定ラインの切削による分割時にバリの発生を極力抑えてパッケージデバイスの生産性を向上させることができるパッケージ基板の分割方法を提供することを目的とする。   The present invention has been made in view of the above, and provides a package substrate dividing method capable of improving the productivity of a package device by suppressing the generation of burrs as much as possible at the time of division by cutting a planned division line. With the goal.

上述した課題を解決し、目的を達成するために、本発明に係るパッケージ基板の分割方法は、デバイス側に突出して電極が形成された分割予定ラインによって複数のデバイスが区画され形成されたパッケージ基板を保持し、送り機構によって移動可能な移動基台に支持された回転可能なチャックテーブルと、前記パッケージ基板を支持するダイシングフレームと、前記ダイシングフレームを支持するフレームクランプと、前記分割予定ラインを規制する間隔で切刃が2枚配されて前記パッケージ基板に規制溝形成を行う第一の切削ブレードと、前記第一の切削ブレードの切刃の幅より大きい幅で構成された第二の切削ブレードとを有する切削装置を用い、前記パッケージ基板を前記第一の切削ブレードおよび前記第二の切削ブレードによって切削し個々のパッケージデバイスに分割するとともに前記電極を各パッケージデバイス毎に分極するパッケージ基板の分割方法であって、前記分割予定ラインを規制する第一の側部と第二の側部とに前記第一の切削ブレードを位置づけて切削し、前記分割予定ラインに2条の規制溝を形成して前記電極と前記分割予定ラインとを分断する規制溝形成工程と、前記規制溝形成工程後に前記2条の規制溝の外側より幅が狭く該2条の規制溝の内側より幅の広い前記第二の切削ブレードを該2条の規制溝の中央部に位置づけて前記分割予定ラインを切削して個々のパッケージデバイスに分割する分割工程と、を含むことを特徴とする。 In order to solve the above-described problems and achieve the object, a method for dividing a package substrate according to the present invention includes a package substrate in which a plurality of devices are partitioned and formed by a division line that protrudes toward the device and has electrodes formed thereon. A chuck table that is supported by a movable base that is movable by a feed mechanism, a dicing frame that supports the package substrate, a frame clamp that supports the dicing frame, and a line to be divided is regulated. A first cutting blade having two cutting blades arranged at intervals to form a regulation groove in the package substrate, and a second cutting blade having a width larger than the width of the cutting blade of the first cutting blade using the cutting apparatus having the door, by the package substrate said first cutting blade and the second cutting blade Cutting Shi a method of dividing the package substrate to polarize the electrodes for each package device as well as divided into individual packaged devices, the in the first side and the second side for regulating the dividing lines cutting position the first cutting blade, a regulating groove forming step of separating the said dividing line and said electrode to form a control groove of two rows on the dividing line, the after the regulating groove forming step 2 individually Article cutting blade width than the inner broader the second restriction groove width is narrow the Article 2 from outside of the restricting groove of cutting the dividing lines positioned in the central portion of the restricting groove of Article 2 the And a dividing step of dividing the package device.

本発明に係るパッケージ基板の分割方法によれば、比較的薄い第一の切削ブレードによって2条の規制溝を形成して分割予定ラインと電極とを分断した後、分断した2条の規制溝の外側より狭く内側より広い第二の切削ブレードでパッケージ基板を切削して分割するようにしたので、電極部分の切削端面は比較的薄い第一の切削ブレードによる切削端面として形成されるため切削速度を速くしてもバリが生じにくいとともに電極の盛り上がりも減少させることができ、よって、パッケージデバイスの生産性および品質を向上させることができるという効果を奏する。また、比較的薄い第一の切削ブレードによる切削は、分割予定ラインと電極との分断に留まるため、該第一の切削ブレードの消耗を抑制することができるという効果を奏する。   According to the method for dividing a package substrate according to the present invention, the two restriction grooves are formed by the relatively thin first cutting blade to divide the division-scheduled line and the electrode, and then the divided restriction grooves are separated. Since the package substrate is cut and divided by the second cutting blade that is narrower than the outside and wider than the inside, the cutting end surface of the electrode portion is formed as a cutting end surface by the relatively thin first cutting blade, so that the cutting speed is reduced. Even if the speed is increased, burrs are less likely to occur, and the rise of the electrode can be reduced. Thus, the productivity and quality of the package device can be improved. Moreover, since the cutting with the relatively thin first cutting blade remains only at the division between the division line and the electrode, there is an effect that the consumption of the first cutting blade can be suppressed.

以下、本発明を実施するための最良の形態であるパッケージ基板の分割方法について図面を参照して説明する。本実施の形態は、QFNによるパッケージ基板の分割方法への適用例を示す。   Hereinafter, a package substrate dividing method which is the best mode for carrying out the present invention will be described with reference to the drawings. The present embodiment shows an application example to a method for dividing a package substrate by QFN.

まず、QFNによるパッケージ基板の作製方法および個々のパッケージデバイスへの分割方法の概要について説明する。図1は、パッケージ基板のベースとなる金属枠体10の一部を示す平面図である。金属枠体10は、例えば3mm×5mm程度の大きさのパッケージデバイスを10×30個分程度を同時に形成し得る大きさの矩形シート状のものであり、例えば銅などの導電性が良好で厚さ150μm程度の金属板をエッチング加工またはプレス加工することにより所定形状にパターン形成されている。   First, an outline of a method for manufacturing a package substrate by QFN and a method for dividing the package substrate into individual package devices will be described. FIG. 1 is a plan view showing a part of a metal frame 10 serving as a base of a package substrate. The metal frame 10 is, for example, a rectangular sheet having a size capable of simultaneously forming about 10 × 30 package devices having a size of about 3 mm × 5 mm. A metal plate having a thickness of about 150 μm is patterned into a predetermined shape by etching or pressing.

金属枠体10は、個々のデバイスが配設される領域を区画するよう升目状に形成されたストリート11部分によるフレーム構造を有している。また、金属枠体10は、各ストリート11部分によって区画される開口部の中央部に、半導体チップ等のデバイスを搭載するための矩形状のダイパッド12と、対応するストリート11部分の四隅から対角線上に延在してダイパッド12を支持する4本のサポートバー13とを有する。また、金属枠体10は、各ストリート11部分からダイパッド12側に向けて櫛歯状に突出させた複数本ずつの電極14を有する。ここで、隣り合う2つのダイパッド12に対応する各電極14はストリート11部分を介して電気的に接続された状態で一体に形成されている。また、ストリート11部分は、パッケージデバイスの製造工程において最終的にパッケージ基板をパッケージデバイス毎に分割するための分割予定ラインCLとして設定されている。すなわち、ストリート11の全幅が分割予定ラインCLとなるものであり、分割予定ラインCLは、ストリート11の第一の側部E1と第二の側部E2とによりライン幅が規制される。なお、サポートバー13部分は、最終的にパッケージデバイスの外面に露出しないように金属枠体10において他の部分よりも薄くなるようにエッチングされて形成されている。   The metal frame 10 has a frame structure with streets 11 formed in a grid shape so as to partition areas where individual devices are arranged. In addition, the metal frame 10 has a rectangular die pad 12 for mounting a device such as a semiconductor chip at the center of the opening defined by each street 11 portion, and diagonally from the four corners of the corresponding street 11 portion. And four support bars 13 that support the die pad 12. In addition, the metal frame 10 has a plurality of electrodes 14 each protruding in a comb shape from each street 11 portion toward the die pad 12 side. Here, each electrode 14 corresponding to two adjacent die pads 12 is integrally formed in a state of being electrically connected via the street 11 portion. Further, the street 11 portion is set as a planned division line CL for finally dividing the package substrate into package devices in the manufacturing process of the package device. In other words, the entire width of the street 11 is the division line CL, and the line width of the division line CL is regulated by the first side E1 and the second side E2 of the street 11. Note that the support bar 13 portion is formed by etching so as to be thinner than other portions in the metal frame 10 so as not to be exposed to the outer surface of the package device.

図2は、図1中のA−A線断面部分で示すQFNによるパッケージ基板の作製方法および個々のデバイスへの分割方法の工程図である。まず、図2(a)に示すように、図1に示したような金属枠体10の裏面には樹脂充填のためのQFN用アセンブリテープ21を接着しておく。次いで、図2(b)に示すように、金属枠体10の各ダイパッド12上にエポキシ系樹脂等の接着剤を塗布し、半導体チップ等の個々のデバイス22の裏面側をダイパッド12上に接着する。さらに、各デバイス22の各電極と金属枠体10における対応する各電極14の内部電極部とをボンディングワイヤ23によって電気的に接続する。   FIG. 2 is a process diagram of a method for manufacturing a package substrate by QFN and a method for dividing the device into individual devices, which is indicated by a cross-sectional portion taken along line AA in FIG. First, as shown in FIG. 2A, an assembly tape 21 for QFN for resin filling is bonded to the back surface of the metal frame 10 as shown in FIG. Next, as shown in FIG. 2B, an adhesive such as an epoxy resin is applied to each die pad 12 of the metal frame 10, and the back side of each device 22 such as a semiconductor chip is adhered to the die pad 12. To do. Furthermore, each electrode of each device 22 and the internal electrode portion of each corresponding electrode 14 in the metal frame 10 are electrically connected by a bonding wire 23.

次に、図2(c)に示すように、一括モールディング方式により、金属枠体10のデバイス22が配設されている側の全面を充填樹脂24で厚さ500μm程度に被覆する。そして、QFN用アセンブリテープ21を金属枠体10から剥離して除去することにより、各デバイス22が金属枠体10による金属層と充填樹脂24による樹脂層25とによりパッケージングされたパッケージ基板26が完成する。さらに、充填樹脂24の表面側に支持テープ27を接着した後、図2(d)に示すように、パッケージ基板26を裏返して分割予定ラインCL部分で切断することにより、デバイス22毎のパッケージデバイス30が完成するように分割する。この切断工程において、ストリート11部分が第一の側部E1〜第二の側部E2の全幅に渡って除去されることで、電極14が各パッケージデバイス30毎に分極され、電気的に独立した状態となる。この後、支持テープ27上から個々のパッケージデバイス30を取り出す。   Next, as shown in FIG. 2C, the entire surface of the metal frame 10 on which the device 22 is disposed is covered with a filling resin 24 to a thickness of about 500 μm by a batch molding method. Then, by removing the QFN assembly tape 21 from the metal frame 10 and removing it, the package substrate 26 in which each device 22 is packaged by the metal layer formed by the metal frame 10 and the resin layer 25 formed by the filling resin 24 is formed. Complete. Further, after bonding the support tape 27 to the surface side of the filling resin 24, as shown in FIG. 2 (d), the package substrate 26 is turned over and cut at the portion to be divided CL, whereby a package device for each device 22 is obtained. Split so that 30 is completed. In this cutting step, the street 11 portion is removed over the entire width of the first side portion E1 to the second side portion E2, so that the electrode 14 is polarized for each package device 30 and electrically independent. It becomes a state. Thereafter, the individual package devices 30 are taken out from the support tape 27.

図3は、分割された一つのパッケージデバイス30の外観構造を示す斜視図である。パッケージデバイス30は、例えば3mm×5mm程度の大きさである。図3に示すように、外部接続端子となる各電極14の外部電極部分が充填樹脂24と同一面上に露出する。また、サポートバー13部分の表面は充填樹脂24により被覆されており、外部に露出しない。   FIG. 3 is a perspective view showing an external structure of one divided package device 30. The package device 30 has a size of about 3 mm × 5 mm, for example. As shown in FIG. 3, the external electrode portion of each electrode 14 serving as an external connection terminal is exposed on the same surface as the filling resin 24. The surface of the support bar 13 is covered with the filling resin 24 and is not exposed to the outside.

ここで、本実施の形態は、図2(d)に示したようなパッケージ基板26をパッケージデバイス30に分割する分割方法に特徴を有する。図4は、本実施の形態の分割方法を示す説明図である。まず、図4(a)に示すように、分割予定ラインCLのライン幅Wを規制する第一の側部(エッジ)E1と第二の側部(エッジ)E2とのそれぞれの内側位置に切削幅t1が比較的薄い第一の切削ブレード40を位置づけて充填樹脂24に達する程の深さにストリート11を切削し、分割予定ラインCLの両側に溝幅W1=t1の細い2条の規制溝41a,41bを形成して電極14と分割予定ラインCLとを分断する(規制溝形成工程)。ここで、切削ブレード40は、例えばダイアモンド砥粒をNiメッキした電鋳ブレードである。   Here, the present embodiment is characterized by a dividing method for dividing the package substrate 26 into the package devices 30 as shown in FIG. FIG. 4 is an explanatory diagram showing the dividing method according to the present embodiment. First, as shown in FIG. 4A, cutting is performed at respective inner positions of the first side portion (edge) E1 and the second side portion (edge) E2 that regulate the line width W of the planned division line CL. The first cutting blade 40 having a relatively small width t1 is positioned, the street 11 is cut to a depth that reaches the filling resin 24, and two narrow regulation grooves having a groove width W1 = t1 on both sides of the division line CL. 41a and 41b are formed and the electrode 14 and the division | segmentation scheduled line CL are parted (regulation groove | channel formation process). Here, the cutting blade 40 is an electroformed blade in which diamond abrasive grains are plated with Ni, for example.

このような2条の規制溝41a,41bの形成に際しては、切刃が1枚の第一の切削ブレードによって規制溝41a,41bを順次形成するようにしてもよいが、例えば、図4(a)中に示すように、スペーサ42により分割予定ラインCLのライン幅Wを規制する間隔Wiを持って切刃40a,40bが2枚配設された第一の切削ブレード40を用いることにより、2条の規制溝41a,41bを同時に形成するようにしてもよい。   When forming the two restriction grooves 41a and 41b, the cutting blade may form the restriction grooves 41a and 41b sequentially with one first cutting blade. For example, FIG. As shown in the figure, by using the first cutting blade 40 in which two cutting blades 40a, 40b are arranged with a spacing Wi that regulates the line width W of the division line CL by the spacer 42, 2 The regulation grooves 41a and 41b may be formed at the same time.

2条の規制溝41a,41bを形成した後、図4(b)に示すように、2条の規制溝41a,41bの外側間の幅Wo(=W)より幅が狭く2条の規制溝41a,41bの内側間の幅Wi(=W−2W1)より幅の広い比較的厚い幅t2を有する第二の切削ブレード43を2条の規制溝41a,41bの中央部に位置づけて分割予定ラインCL(ストリート11)を充填樹脂24とともに支持テープ27に達するまで切断することにより、パッケージ基板26を個々のデバイス22毎に分割し、パッケージデバイス30を完成する(分割工程)。ここで、切削ブレード43は、例えばダイアモンド砥粒をNiメッキした電鋳ブレードである。   After forming the two restriction grooves 41a and 41b, as shown in FIG. 4B, the width is narrower than the width Wo (= W) between the outer sides of the two restriction grooves 41a and 41b. The second cutting blade 43 having a relatively thick width t2 wider than the width Wi (= W−2W1) between the inner sides of 41a and 41b is positioned at the center of the two restriction grooves 41a and 41b, and is scheduled to be divided. By cutting CL (street 11) together with the filling resin 24 until it reaches the support tape 27, the package substrate 26 is divided into individual devices 22 to complete the package device 30 (division step). Here, the cutting blade 43 is an electroformed blade in which diamond abrasive grains are plated with Ni, for example.

ここで、寸法関係の一例について説明する。標準的な例として、例えば分割予定ラインCL(ストリート11)のライン幅Wが300μmの場合、第一の切削ブレード40の幅t1は30μm、第二の切削ブレード43の幅t2は270μm〜280μmとされる。ライン幅Wは、仕様により、100μm〜500μm程度の広がり、すなわちW=300μm±200μmであるので、第一の切削ブレード40の幅t1もその仕様に対応してt1=30μm±10μm程度、第二の切削ブレード43の幅t2もその仕様に対応してt2=270〜280μm±200μm程度のものを用いるようにすればよい。或いは、第一の切削ブレード40の幅t1は固定とし、第二の切削ブレード43の幅t2のみを変更するようにしてもよい。要は、Wo>t2>Wiを満たす範囲内で、第一の切削ブレード40の幅t1が、第二の切削ブレード43の幅t2より細ければよい。   Here, an example of a dimensional relationship will be described. As a standard example, for example, when the line width W of the planned division line CL (street 11) is 300 μm, the width t1 of the first cutting blade 40 is 30 μm, and the width t2 of the second cutting blade 43 is 270 μm to 280 μm. Is done. The line width W is about 100 μm to 500 μm depending on the specification, that is, W = 300 μm ± 200 μm. Therefore, the width t1 of the first cutting blade 40 corresponds to the specification, t1 = about 30 μm ± 10 μm, The width t2 of the cutting blade 43 may be about t2 = 270 to 280 μm ± 200 μm corresponding to the specification. Alternatively, the width t1 of the first cutting blade 40 may be fixed, and only the width t2 of the second cutting blade 43 may be changed. In short, the width t1 of the first cutting blade 40 should be narrower than the width t2 of the second cutting blade 43 within a range satisfying Wo> t2> Wi.

上述したように本実施の形態によれば、比較的薄い切削ブレードによって銅などの金属を切削した場合にはバリが発生しにくいという実験結果に基づき、比較的薄い第一の切削ブレード40によって2条の細い規制溝41a,41bを形成して分割予定ラインCLと電極14とを分断した後、分断した2条の規制溝41a,41bの外側より狭く内側より広い第二の切削ブレード43でパッケージ基板26を切削して分割するようにしたので、電極14部分の切削端面は、比較的厚い第二の切削ブレード43による切削端面としては形成されず、比較的薄い第一の切削ブレード40による切削端面として形成されるため、切削速度を速くしてもバリが生じにくいとともに電極14の盛り上がりも減少し、よって、パッケージデバイス30の生産性および品質が向上する。   As described above, according to the present embodiment, when the metal such as copper is cut with a relatively thin cutting blade, burrs are hardly generated. After forming the narrow regulation grooves 41a and 41b to divide the dividing line CL and the electrode 14, the second cutting blade 43 is narrower than the outside of the two separated regulation grooves 41a and 41b and packaged by the second cutting blade 43. Since the substrate 26 is cut and divided, the cutting end surface of the electrode 14 portion is not formed as a cutting end surface by the relatively thick second cutting blade 43, but is cut by the relatively thin first cutting blade 40. Since it is formed as an end surface, even if the cutting speed is increased, burrs are hardly generated and the rise of the electrode 14 is reduced. Sex and quality is improved.

ここで、比較的薄い第一の切削ブレード40の切削によればバリが発生しにくいことから、第二の切削ブレード43を用いずに第一の切削ブレード40によってパッケージ基板26をフルカットすることも考えられる。しかしながら、第一の切削ブレード40は薄い分、切削動作に伴う消耗が激しいことから、本実施の形態のように、第一の切削ブレード40による切削を、分割予定ラインCLと電極14との分断に留め、最終的な分割用の切削は比較的厚くて消耗の少ない第二の切削ブレード43で行わせることにより、第一の切削ブレード40の消耗を抑制することができる。   Here, since the burr is not easily generated by cutting the relatively thin first cutting blade 40, the package substrate 26 is fully cut by the first cutting blade 40 without using the second cutting blade 43. Is also possible. However, since the first cutting blade 40 is thin and wear due to the cutting operation is severe, the cutting by the first cutting blade 40 is divided between the division line CL and the electrode 14 as in the present embodiment. The final cutting for division is performed by the second cutting blade 43 which is relatively thick and consumes little, so that the consumption of the first cutting blade 40 can be suppressed.

また、分割予定ラインCL(ストリート11)のライン幅Wをt1程度に細くすれば、比較的薄くてバリの発生しにくい第一のブレード40を用いて1本の溝を切削するだけでパッケージ基板26をフルカットすることも可能となる。しかしながら、上述の第一のブレード40の消耗の問題に加えて、元々パッケージ基板26の分割予定ラインCL(ストリート11)等の既存のパターン仕様は、比較的厚めの切削ブレード幅等に対応させて設計されているため、分割予定ラインCL(ストリート11)のライン幅Wをt1程度に細くすることは大幅な仕様変更を要することとなる。この点、本実施の形態によれば、パッケージ基板26の既存のパターン仕様に対応可能な分割方法となる。   Further, if the line width W of the planned dividing line CL (street 11) is reduced to about t1, the package substrate can be obtained by cutting only one groove using the first blade 40 which is relatively thin and hardly generates burrs. 26 can be fully cut. However, in addition to the problem of wear of the first blade 40 described above, the existing pattern specifications such as the division line CL (street 11) of the package substrate 26 originally correspond to a relatively thick cutting blade width or the like. Since it is designed, reducing the line width W of the division planned line CL (street 11) to about t1 requires a significant specification change. In this regard, according to the present embodiment, the dividing method is applicable to the existing pattern specifications of the package substrate 26.

ところで、図4(a)(b)に示したような規制溝形成工程と分割工程とは、それぞれ別個の装置を用いて別個に行うようにしてもよいが、図5に示すような切削装置を用いて一括して行うようにしてもよい。図5は、分割処理用の切削装置の構成例を示す概略斜視図である。切削装置50は、パッケージ基板26を保持するチャックテーブル51と、パッケージ基板26を支持したダイシングフレームFを支持するフレームクランプ51aと、チャックテーブル51に保持されたパッケージ基板26に作用して規制溝形成を行う第一の切削手段60と、切削を行う第二の切削手段70とを有する。チャックテーブル51は、図示しない駆動源に連結されて回転可能である。また、チャックテーブル51を支持する移動基台52は、ボールネジ、ナット、パルスモータ等による送り機構によってX軸方向に移動可能に設けられている。   Incidentally, the regulation groove forming step and the dividing step as shown in FIGS. 4A and 4B may be performed separately using separate devices, but the cutting device as shown in FIG. You may make it carry out collectively using. FIG. 5 is a schematic perspective view showing a configuration example of a cutting apparatus for division processing. The cutting device 50 acts on the chuck table 51 that holds the package substrate 26, the frame clamp 51 a that supports the dicing frame F that supports the package substrate 26, and the package substrate 26 that is held on the chuck table 51 to form a regulation groove. A first cutting means 60 for performing cutting, and a second cutting means 70 for performing cutting. The chuck table 51 is connected to a drive source (not shown) and is rotatable. The moving base 52 that supports the chuck table 51 is provided so as to be movable in the X-axis direction by a feed mechanism such as a ball screw, a nut, or a pulse motor.

図6は、第一の切削手段60の構成例を示す分解斜視図であり、図7は、第二の切削手段70の構成例を示す分解斜視図である。第一の切削手段60は、図6に示すように、スペーサ42(図4参照)で所定間隔隔てた2枚の切刃40a,40bを有する第一の切削ブレード40と、第一の切削ブレード40を支持するマウント61と、マウント61に連結されるスピンドル62と、スピンドル62を回転可能に支持するハウジング63と、第一の切削ブレード40をマウント61に固定する挟持フランジ64とを備える。第二の切削手段70は、図7に示すように、第二の切削ブレード43と、第二の切削ブレード43を支持するマウント71と、マウント71に連結されるスピンドル72と、スピンドル72を回転可能に支持するハウジング73と、第二の切削ブレード43をマウント71に固定する挟持フランジ74とを備える。   FIG. 6 is an exploded perspective view showing a configuration example of the first cutting means 60, and FIG. 7 is an exploded perspective view showing a configuration example of the second cutting means 70. As shown in FIG. 6, the first cutting means 60 includes a first cutting blade 40 having two cutting blades 40a and 40b separated by a spacer 42 (see FIG. 4), and a first cutting blade. 40, a mount 62 that supports the mount 61, a housing 63 that rotatably supports the spindle 62, and a clamping flange 64 that fixes the first cutting blade 40 to the mount 61. As shown in FIG. 7, the second cutting means 70 rotates the second cutting blade 43, a mount 71 that supports the second cutting blade 43, a spindle 72 coupled to the mount 71, and the spindle 72. A housing 73 that can be supported and a clamping flange 74 that fixes the second cutting blade 43 to the mount 71 are provided.

また、第一の切削手段60の−X軸方向隣りには、パッケージ基板26のストリート11(分割予定ラインCL)を検出するための図示しないアライメント部を備えている。アライメント部は、パッケージ基板26の表面を撮像する可視光線用や赤外線用のカメラ53を有し、このカメラ53によって取得した画像を基に、あらかじめ記憶されているキーパターンとのパターンマッチングなどの処理を行うことで、規制溝形成や切断を行うべきストリート11部分を検出し、分割予定ラインCLの第一の側部E1、第二の側部E2の内側位置への第一のブレード40の位置づけや、規制溝41a,41b間の中央部への第二の切削ブレード43の位置づけに供する。   Further, an alignment unit (not shown) for detecting the street 11 (division line CL) of the package substrate 26 is provided adjacent to the first cutting means 60 in the −X-axis direction. The alignment unit includes a visible light or infrared camera 53 that images the surface of the package substrate 26, and processing such as pattern matching with a key pattern stored in advance based on an image acquired by the camera 53. To detect the portion of the street 11 where the restriction groove should be formed or cut, and the first blade 40 is positioned at the inner side of the first side E1 and the second side E2 of the division line CL. Or it serves for positioning of the 2nd cutting blade 43 to the center part between regulation grooves 41a and 41b.

第一の切削手段60および第二の切削手段70は、ボールネジ、ナット、パルスモータ等による図示しない切り込み送り機構によってZ軸方向に昇降移動可能に設けられ、また、ボールネジ、ナット、パルスモータ等による図示しない割り出し送り機構によってY軸方向に移動可能に設けられている。   The first cutting means 60 and the second cutting means 70 are provided so as to be movable up and down in the Z-axis direction by a not-shown cutting feed mechanism such as a ball screw, nut, pulse motor or the like, and also by a ball screw, nut, pulse motor or the like. It is provided so as to be movable in the Y-axis direction by an index feed mechanism (not shown).

また、切削装置50は、カセット部54、搬出入手段55、搬送手段56、洗浄手段57および搬送手段58を備える。カセット部54は、パッケージ基板26が貼付けられたダイシングフレームFを複数枚収納するものである。搬出入手段55は、カセット部54に収納されたダイシングフレームFを搬送手段56が搬送可能な載置領域に搬出するとともに、パッケージ基板26が処理済みのダイシングフレームFをカセット部54に搬入するものである。搬送手段56は、搬出入手段55によって載置領域に搬出されたダイシングフレームFをチャックテーブル51上に搬送するものである。また、洗浄手段57は、パッケージ基板26が第一の切削手段60および第二の切削手段70による処理済みのダイシングフレームFを洗浄するものである。搬送手段58は、パッケージ基板26が第一の切削手段60および第二の切削手段70による処理済みのダイシングフレームFをチャックテーブル51上から洗浄手段57へ搬送するものである。   Further, the cutting device 50 includes a cassette unit 54, a carry-in / out means 55, a transport unit 56, a cleaning unit 57, and a transport unit 58. The cassette unit 54 stores a plurality of dicing frames F to which the package substrate 26 is attached. The unloading / unloading means 55 unloads the dicing frame F stored in the cassette section 54 to a placement area that can be conveyed by the conveying means 56 and also loads the processed dicing frame F into the cassette section 54. It is. The conveying means 56 conveys the dicing frame F carried out to the placement area by the carrying-in / out means 55 onto the chuck table 51. The cleaning means 57 is for the package substrate 26 to clean the dicing frame F that has been processed by the first cutting means 60 and the second cutting means 70. The conveying means 58 is for the package substrate 26 to convey the dicing frame F processed by the first cutting means 60 and the second cutting means 70 from the chuck table 51 to the cleaning means 57.

パッケージ基板26は、金属枠体10側を上にしてチャックテーブル51上に載置されて保持される。そして、チャックテーブル51が+X軸方向に移動することで、パッケージ基板26がカメラ53の直下に位置づけられ、カメラ53によって撮像される。その撮像画像を基にアライメント部によってストリート11の第一の側部E1、第二の側部E2が検出され、第一の側部E1、第二の側部E2の内側位置と第一の切削ブレード40の切刃40a,40bとのY軸方向の位置合わせが行われる。さらに、チャックテーブル51を+X軸方向に移動させるとともに、切り込み送り部によって第一の切削ブレード40を所定位置まで下降させ、検出されたストリート11の第一の側部E1、第二の側部E2の内側位置に対して切刃40a,40bを切り込ませることにより、分割予定ラインCLの両側に沿ってストリート11部分を切削し、2条の規制溝41a,41bを同時に形成する。   The package substrate 26 is placed and held on the chuck table 51 with the metal frame 10 side up. Then, as the chuck table 51 moves in the + X-axis direction, the package substrate 26 is positioned immediately below the camera 53 and is imaged by the camera 53. Based on the captured image, the first side E1 and the second side E2 of the street 11 are detected by the alignment unit, and the inner positions of the first side E1 and the second side E2 and the first cutting are detected. Positioning in the Y-axis direction with the cutting edges 40a, 40b of the blade 40 is performed. Further, the chuck table 51 is moved in the + X-axis direction, and the first cutting blade 40 is lowered to a predetermined position by the cutting feed unit, and the detected first side E1 and second side E2 of the street 11 are detected. By cutting the cutting blades 40a and 40b into the inner position, the street 11 portion is cut along both sides of the planned dividing line CL, and two restriction grooves 41a and 41b are formed simultaneously.

そして、割り出し送り部によって第一の切削ブレード40をストリート11の間隔ずつ割り出し送りさせながら順次同様の規制溝形成を行う。同一方向のストリート11の両側に全て2条の規制溝41a,41bを形成した後は、チャックテーブル51を90度回転させて縦横を入れ替えて同様の規制溝形成を行うことによって、パッケージ基板26の表面上の全てのストリート11の両側に2条の規制溝41a,41bが形成される。   And the same regulation groove | channel formation is sequentially performed, indexing and feeding the 1st cutting blade 40 by the space | interval of the street 11 by the index feeding part. After all the two restriction grooves 41a and 41b are formed on both sides of the street 11 in the same direction, the package table 26 is formed by rotating the chuck table 51 by 90 degrees and changing the vertical and horizontal directions to form the same restriction grooves. Two regulation grooves 41a and 41b are formed on both sides of all the streets 11 on the surface.

その後、第二の切削ブレード43による切断を行うために、チャックテーブル51を+X軸方向に移動させるとともに、切削ブレード43を高速回転させながら切り込み送り部によって所定位置まで下降させ、位置づけられた2条の規制溝41a,41bの中央部に向けて切削ブレード43を切り込ませることにより、分割予定ラインCLに沿って2条の規制溝41a,41b間を切断する。   Thereafter, in order to perform the cutting by the second cutting blade 43, the chuck table 51 is moved in the + X-axis direction, and the cutting blade 43 is moved down to a predetermined position by the cutting feed portion while rotating at high speed. By cutting the cutting blade 43 toward the center of the restriction grooves 41a and 41b, the two restriction grooves 41a and 41b are cut along the planned dividing line CL.

そして、割り出し送り部によって切削ブレード43をストリート11の間隔ずつ割り出し送りさせながら順次同様の切断を行う。同一方向のストリート11を全て切断した後は、チャックテーブル51を90度回転させて縦横を入れ替えて同様の切断を行うことによって、パッケージ基板26の全てのストリート11が切断により除去され、デバイス22毎にパッケージデバイス30が分割形成される。パッケージデバイス30に分割された後のパッケージ基板26は、チャックテーブル51から搬送手段58によって洗浄手段57に搬送され、洗浄手段57による洗浄を受けた後、搬送手段56によってカセット部54に搬入される。   Then, the same cutting is sequentially performed while the cutting blade 43 is indexed and fed at intervals of the street 11 by the indexing and feeding unit. After all the streets 11 in the same direction are cut, the streets 11 of the package substrate 26 are removed by cutting by rotating the chuck table 51 by 90 degrees and exchanging the vertical and horizontal directions. The package device 30 is divided and formed. After being divided into package devices 30, the package substrate 26 is transferred from the chuck table 51 to the cleaning unit 57 by the transfer unit 58, and after being cleaned by the cleaning unit 57, is transferred to the cassette unit 54 by the transfer unit 56. .

なお、本実施の形態では、第一の切削ブレード40による2条の規制溝41a,41bの形成が全て終了してから切削ブレード43による切断を行うようにしたが、1本のストリート11に対して2条の規制溝41a,41bが形成される毎に、切削ブレード43による切断を続けて行うように、規制溝形成と切断とをストリート11単位で交互に行うようにしてもよい。   In the present embodiment, the cutting with the cutting blade 43 is performed after the formation of the two restriction grooves 41a and 41b by the first cutting blade 40 is completed. Thus, each time the two regulation grooves 41a and 41b are formed, the regulation groove formation and the cutting may be alternately performed in units of streets 11 so that the cutting with the cutting blade 43 is continuously performed.

なお、本実施の形態では、QFNによるパッケージ基板26の分割方法への適用例を示したが、このような適用例に限らず、例えばチップLEDのパッケージ基板等のその他のパッケージ基板の分割方法にも適用可能である。   In the present embodiment, the application example to the method of dividing the package substrate 26 by QFN has been shown. However, the present invention is not limited to such an application example, and the present invention is not limited to such an application method. Is also applicable.

パッケージ基板のベースとなる金属枠体の一部を示す平面図である。It is a top view which shows a part of metal frame used as the base of a package board | substrate. 図1中のA−A線断面部分で示すQFNによるパッケージ基板の作製方法および個々のデバイスへの分割方法の工程図である。It is process drawing of the manufacturing method of the package board | substrate by QFN shown in the AA line cross-section part in FIG. 1, and the division | segmentation method to each device. 分割された一つのパッケージデバイスの外観構造を示す斜視図である。It is a perspective view showing the appearance structure of one divided package device. 本実施の形態の分割方法を工程順に示す説明図である。It is explanatory drawing which shows the division | segmentation method of this Embodiment in process order. 切削装置の構成例を示す概略斜視図である。It is a schematic perspective view which shows the structural example of a cutting device. 第一の切削手段の構成例を示す分解斜視図である。It is a disassembled perspective view which shows the structural example of a 1st cutting means. 第二の切削手段の構成例を示す分解斜視図である。It is a disassembled perspective view which shows the structural example of a 2nd cutting means.

符号の説明Explanation of symbols

14 電極
22 デバイス
26 パッケージ基板
30 パッケージデバイス
40 第一の切削ブレード
40a,40b 切刃
41a,41b 規制溝
43 第二の切削ブレード
CL 分割予定ライン
E1 第一の側部
E2 第二の側部
14 Electrode 22 Device 26 Package substrate 30 Package device 40 First cutting blades 40a, 40b Cutting blades 41a, 41b Restriction groove 43 Second cutting blade CL Scheduled division line E1 First side E2 Second side

Claims (1)

デバイス側に突出して電極が形成された分割予定ラインによって複数のデバイスが区画され形成されたパッケージ基板を保持し、送り機構によって移動可能な移動基台に支持された回転可能なチャックテーブルと、前記パッケージ基板を支持するダイシングフレームと、前記ダイシングフレームを支持するフレームクランプと、前記分割予定ラインを規制する間隔で切刃が2枚配されて前記パッケージ基板に規制溝形成を行う第一の切削ブレードと、前記第一の切削ブレードの切刃の幅より大きい幅で構成された第二の切削ブレードとを有する切削装置を用い、前記パッケージ基板を前記第一の切削ブレードおよび前記第二の切削ブレードによって切削し個々のパッケージデバイスに分割するとともに前記電極を各パッケージデバイス毎に分極するパッケージ基板の分割方法であって、
前記分割予定ラインを規制する第一の側部と第二の側部とに前記第一の切削ブレードを位置づけて切削し、前記分割予定ラインに2条の規制溝を形成して前記電極と前記分割予定ラインとを分断する規制溝形成工程と、
前記規制溝形成工程後に、前記2条の規制溝の外側より幅が狭く該2条の規制溝の内側より幅の広い前記第二の切削ブレードを該2条の規制溝の中央部に位置づけて前記分割予定ラインを切削して個々のパッケージデバイスに分割する分割工程と、を含む
ことを特徴とするパッケージ基板の分割方法。
A rotatable chuck table supported on a movable base that holds a package substrate in which a plurality of devices are partitioned and formed by a dividing line in which electrodes are formed protruding to the device side, and supported by a movable base that is movable by a feed mechanism; A dicing frame for supporting the package substrate, a frame clamp for supporting the dicing frame, and a first cutting blade for forming a regulation groove on the package substrate by arranging two cutting blades at an interval for regulating the division line And a second cutting blade having a width larger than the width of the cutting edge of the first cutting blade, and the package substrate is used as the first cutting blade and the second cutting blade. To separate individual package devices and separate the electrodes for each package device. A method of dividing the package substrate,
The dividing lines and cutting position the said first cutting blade and the first side and the second side for regulating the said and the electrode to form a control groove of two rows on the dividing lines A regulation groove forming step for dividing the division planned line;
After the regulating groove forming step, the two rows wide the second cutting blade than the inner width of regulating groove width than the outer narrow the Article 2 of regulating groove of positioning the central portion of the restricting groove of Article 2 the A dividing step of cutting the dividing line into individual package devices, and dividing the package substrate.
JP2006083737A 2006-03-24 2006-03-24 Package substrate division method Active JP4851214B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006083737A JP4851214B2 (en) 2006-03-24 2006-03-24 Package substrate division method
US11/723,639 US7344960B2 (en) 2006-03-24 2007-03-21 Separation method for cutting semiconductor package assemblage for separation into semiconductor packages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006083737A JP4851214B2 (en) 2006-03-24 2006-03-24 Package substrate division method

Publications (2)

Publication Number Publication Date
JP2007258590A JP2007258590A (en) 2007-10-04
JP4851214B2 true JP4851214B2 (en) 2012-01-11

Family

ID=38534021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006083737A Active JP4851214B2 (en) 2006-03-24 2006-03-24 Package substrate division method

Country Status (2)

Country Link
US (1) US7344960B2 (en)
JP (1) JP4851214B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008258383A (en) * 2007-04-04 2008-10-23 Spansion Llc Semiconductor device and its manufacturing method
JP5610673B2 (en) * 2008-04-15 2014-10-22 新日本無線株式会社 Lead frame design method
JP2012109327A (en) * 2010-11-16 2012-06-07 Disco Abrasive Syst Ltd Division method
JP2013069814A (en) * 2011-09-21 2013-04-18 Renesas Electronics Corp Method for manufacturing semiconductor device
JP5960532B2 (en) * 2012-07-25 2016-08-02 株式会社ディスコ Processing method of package substrate
CN109152214B (en) 2017-06-19 2023-02-24 松下知识产权经营株式会社 Wiring board and method for manufacturing the same
JP6999450B2 (en) 2018-03-02 2022-01-18 株式会社ディスコ Blade cover
JP7391465B2 (en) * 2019-03-26 2023-12-05 株式会社ディスコ Manufacturing method of packaged chips
JP2020194894A (en) * 2019-05-28 2020-12-03 株式会社ディスコ Manufacturing method of device chip

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296254A (en) * 1990-02-06 1991-12-26 Dainippon Printing Co Ltd Lead frame
US6413150B1 (en) * 1999-05-27 2002-07-02 Texas Instruments Incorporated Dual dicing saw blade assembly and process for separating devices arrayed a substrate
JP2002118080A (en) * 2000-10-06 2002-04-19 Disco Abrasive Syst Ltd Method of dividing semiconductor plate and cutting blade
JP2002261193A (en) * 2001-03-06 2002-09-13 Hitachi Ltd Method for manufacturing semiconductor device
TW498443B (en) * 2001-06-21 2002-08-11 Advanced Semiconductor Eng Singulation method for manufacturing multiple lead-free semiconductor packages
US6841414B1 (en) * 2002-06-19 2005-01-11 Amkor Technology, Inc. Saw and etch singulation method for a chip package
JP2004023007A (en) * 2002-06-20 2004-01-22 Sony Corp Semiconductor package, lead frame of semiconductor package, manufacturing method of semiconductor package
JP2004228166A (en) * 2003-01-20 2004-08-12 Sanyo Electric Co Ltd Semiconductor device and its producing process
GB0303285D0 (en) * 2003-02-13 2003-03-19 Atlantic Technology Uk Ltd Electronic component packaging
JP2005039088A (en) 2003-07-16 2005-02-10 Sanyo Electric Co Ltd Cutting method, cutter and process for manufacturing semiconductor device
JP2007165789A (en) * 2005-12-16 2007-06-28 Olympus Corp Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2007258590A (en) 2007-10-04
US20070224781A1 (en) 2007-09-27
US7344960B2 (en) 2008-03-18

Similar Documents

Publication Publication Date Title
JP4851214B2 (en) Package substrate division method
JP4879012B2 (en) Cutting blade tip shape inspection method
JP2006286968A (en) Manufacturing method of semiconductor device
US20160086853A1 (en) Wafer processing method
US6609965B2 (en) Cutting blade
JP6576135B2 (en) Cutting blade tip shape forming method
JP2011060985A (en) Method of manufacturing electronic component
JP2018118358A (en) Method for use of laminated dressing board
JP5709593B2 (en) Processing equipment
US11587831B2 (en) Method for machining workpiece
JP6525643B2 (en) Manufacturing apparatus and manufacturing method
JP2018060912A (en) Processing method
JP4643464B2 (en) Package substrate dividing method and dividing apparatus
JP6448302B2 (en) Package substrate grinding method
JP5005605B2 (en) Package substrate cutting method
JP2012227485A (en) Processing method of package substrate
JP2017168763A (en) Dicing device and dicing method
JP2018060882A (en) Processing method of package substrate
JP2020194894A (en) Manufacturing method of device chip
JP2007227726A (en) Aggregate substrate processing method
JP2016082192A (en) Division method for package substrate
JP2019021703A (en) Cutting method of tabular workpiece
JP2013222835A (en) Method for dividing package substrate and dividing device
JP2018152453A (en) Processing method of workpiece
JP2009071083A (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110816

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111004

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111020

R150 Certificate of patent or registration of utility model

Ref document number: 4851214

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141028

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141028

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250