JP4842227B2 - 半導体製造装置における地震被害拡散低減システム - Google Patents
半導体製造装置における地震被害拡散低減システム Download PDFInfo
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- JP4842227B2 JP4842227B2 JP2007208863A JP2007208863A JP4842227B2 JP 4842227 B2 JP4842227 B2 JP 4842227B2 JP 2007208863 A JP2007208863 A JP 2007208863A JP 2007208863 A JP2007208863 A JP 2007208863A JP 4842227 B2 JP4842227 B2 JP 4842227B2
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- Prior art keywords
- boat
- heat treatment
- semiconductor manufacturing
- manufacturing apparatus
- lid
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000009792 diffusion process Methods 0.000 title claims description 17
- 230000007246 mechanism Effects 0.000 claims description 93
- 238000012546 transfer Methods 0.000 claims description 48
- 238000010438 heat treatment Methods 0.000 claims description 43
- 206010044565 Tremor Diseases 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 230000009191 jumping Effects 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 47
- 230000002265 prevention Effects 0.000 description 18
- 238000003860 storage Methods 0.000 description 11
- 230000007723 transport mechanism Effects 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangement of monitoring devices; Arrangement of safety devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
w 半導体ウエハ(被処理体)
4 ボート
5 熱処理炉
Sb ローディングエリア(移載領域)
14 空気清浄機
18 昇降機構
20 回転機構
21 シャッター
22 ボート載置台
23 ボート搬送機構
24 移載機構
26 通信回線
27 地震被害拡散低減システム
28 受信部
29 制御部
32 ボート転倒防止機構
33 軸受部
34 アーム
35 ロック機構
36 ガイド溝部
41 シャワーヘッド
42 ボートシャワー機構
47 載置部
48 係止機構
49 バネ(付勢手段)
60 地震計(初期微動検知部)
Claims (4)
- 通信回線を介して配信される初期微動に基く緊急地震情報を受信する受信部又は初期微動を直接検知する初期微動検知部と、受信した緊急地震情報又は検知した初期微動に基いて半導体製造装置の運転を停止する第1工程、及び、被処理体を多段に搭載するボートの倒壊を防止すべく、ボートを保持する第2工程を実行する制御部と、を備え、前記半導体製造装置は、下部に炉口を有する熱処理炉の下方の移載領域側から炉口を開閉する昇降可能な蓋体と、該蓋体上のボートを回転する回転機構と、移載領域内において前記熱処理炉から搬出されたボートに不活性ガスを吹付けて冷却するボートに対して進退移動可能な縦長のシャワーヘッドを有するボートシャワー機構とを有し、前記制御部からの制御により蓋体上のボートを回転させてシャワーヘッド側に向けると共に、該ボートに対してシャワーヘッドを接近移動させ、ボートからの被処理体の飛び出しを規制するように構成されていることを特徴とする半導体製造装置における地震被害拡散低減システム。
- 前記制御部が、前記第2工程の後に又は第2工程の後であって主要動の終了後に、上記ボートを昇降機構による熱処理炉からの搬出位置であるホームポジションに復帰させる第3工程を実行することを特徴とする請求項1記載の半導体製造装置における地震被害拡散低減システム。
- 通信回線を介して配信される初期微動に基く緊急地震情報を受信する受信部又は初期微動を直接検知する初期微動検知部と、受信した緊急地震情報又は検知した初期微動に基いて半導体製造装置の運転を停止する第1工程、及び、被処理体を多段に搭載するボートの倒壊を防止すべく、ボートを保持する第2工程を実行する制御部と、を備え、前記半導体製造装置は、下部に炉口を有する熱処理炉の下方の移載領域側から炉口を開閉する昇降可能な蓋体と、前記移載領域内に蓋体上のボートと交互に使用されるもう一つのボートを載置する回転可能な載置部を有するボート載置台と、該ボート載置台上のボートに対して側方から清浄空気を噴出す空気清浄機と、前記ボートが空気清浄機とは反対側に向くように前記載置部を係止する係止機構と、該係止機構による係止状態を解除した時にボートが空気清浄機側に向くように載置部を回転付勢する付勢手段とを有し、前記制御部からの制御により前記係止機構を解除して、前記載置部の回転によりボートを空気清浄機側に対向させ、ボートからの被処理体の飛び出しを規制するように構成されていることを特徴とする半導体製造装置における地震被害拡散低減システム。
- 前記制御部が、前記第2工程の後に又は第2工程の後であって主要動の終了後に、上記ボートを昇降機構による熱処理炉からの搬出位置であるホームポジションに復帰させる第3工程を実行することを特徴とする請求項3記載の半導体製造装置における地震被害拡散低減システム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208863A JP4842227B2 (ja) | 2006-09-13 | 2007-08-10 | 半導体製造装置における地震被害拡散低減システム |
TW096133905A TWI442449B (zh) | 2006-09-13 | 2007-09-11 | Reduction method of earthquake damage diffusion of semiconductor manufacturing device and system for earthquake damage diffusion reduction |
KR1020070092447A KR101321149B1 (ko) | 2006-09-13 | 2007-09-12 | 반도체 제조 장치에 있어서의 지진 피해 확산 저감 방법 및지진 피해 확산 저감 시스템 |
US11/898,490 US8452540B2 (en) | 2006-09-13 | 2007-09-12 | Earthquake damage spread reducing method and earthquake damage spread reducing system for use in semiconductor manufacturing apparatus |
CN2007101494846A CN101150045B (zh) | 2006-09-13 | 2007-09-13 | 半导体制造装置中的地震损害扩散降低方法及系统 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006248204 | 2006-09-13 | ||
JP2006248204 | 2006-09-13 | ||
JP2007208863A JP4842227B2 (ja) | 2006-09-13 | 2007-08-10 | 半導体製造装置における地震被害拡散低減システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098610A JP2008098610A (ja) | 2008-04-24 |
JP4842227B2 true JP4842227B2 (ja) | 2011-12-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007208863A Active JP4842227B2 (ja) | 2006-09-13 | 2007-08-10 | 半導体製造装置における地震被害拡散低減システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US8452540B2 (ja) |
JP (1) | JP4842227B2 (ja) |
KR (1) | KR101321149B1 (ja) |
CN (1) | CN101150045B (ja) |
TW (1) | TWI442449B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012212503B4 (de) * | 2012-07-17 | 2014-11-20 | Carl Zeiss Smt Gmbh | Lithographieanlage und verfahren |
JP6747511B2 (ja) | 2016-10-07 | 2020-08-26 | 村田機械株式会社 | 搬送装置、及び搬送方法 |
WO2018072030A1 (en) | 2016-10-19 | 2018-04-26 | Weir-Jones Engineering Consultants Ltd. | Systems and methods for early warning of seismic events |
JP6871384B2 (ja) * | 2017-07-28 | 2021-05-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及びプログラム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2639435B2 (ja) * | 1989-03-20 | 1997-08-13 | 東京エレクトロン株式会社 | 熱処理装置 |
US5110248A (en) * | 1989-07-17 | 1992-05-05 | Tokyo Electron Sagami Limited | Vertical heat-treatment apparatus having a wafer transfer mechanism |
JP3193502B2 (ja) * | 1993-01-04 | 2001-07-30 | キヤノン株式会社 | 半導体露光装置 |
JPH09260364A (ja) * | 1996-03-26 | 1997-10-03 | Tokyo Electron Ltd | 熱処理方法および熱処理装置 |
JPH11159571A (ja) * | 1997-11-28 | 1999-06-15 | Nikon Corp | 機械装置、露光装置及び露光装置の運転方法 |
JP3664897B2 (ja) | 1998-11-18 | 2005-06-29 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP2000286326A (ja) * | 1999-03-30 | 2000-10-13 | Kokusai Electric Co Ltd | 基板処理装置 |
KR20020019414A (ko) * | 2000-09-05 | 2002-03-12 | 엔도 마코토 | 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법 |
JP2002093892A (ja) * | 2000-09-18 | 2002-03-29 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2002100664A (ja) * | 2000-09-25 | 2002-04-05 | Hitachi Kokusai Electric Inc | 基板処理方法および装置 |
US6573198B2 (en) * | 2001-10-10 | 2003-06-03 | Asm International N.V. | Earthquake protection for semiconductor processing equipment |
JP2003243319A (ja) * | 2002-02-19 | 2003-08-29 | Tokyo Electron Ltd | 熱処理用ボート及び縦型熱処理装置 |
JP3912208B2 (ja) * | 2002-02-28 | 2007-05-09 | 東京エレクトロン株式会社 | 熱処理装置 |
US6792720B2 (en) * | 2002-09-05 | 2004-09-21 | Geosierra Llc | Seismic base isolation by electro-osmosis during an earthquake event |
US8190277B2 (en) * | 2007-11-30 | 2012-05-29 | Tokyo Electron Limited | Method for limiting expansion of earthquake damage and system for limiting expansion of earthquake damage for use in semiconductor manufacturing apparatus |
-
2007
- 2007-08-10 JP JP2007208863A patent/JP4842227B2/ja active Active
- 2007-09-11 TW TW096133905A patent/TWI442449B/zh active
- 2007-09-12 US US11/898,490 patent/US8452540B2/en not_active Expired - Fee Related
- 2007-09-12 KR KR1020070092447A patent/KR101321149B1/ko active IP Right Grant
- 2007-09-13 CN CN2007101494846A patent/CN101150045B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101321149B1 (ko) | 2013-10-22 |
CN101150045B (zh) | 2010-07-07 |
US20080063994A1 (en) | 2008-03-13 |
US8452540B2 (en) | 2013-05-28 |
CN101150045A (zh) | 2008-03-26 |
KR20080024989A (ko) | 2008-03-19 |
TWI442449B (zh) | 2014-06-21 |
TW200834652A (en) | 2008-08-16 |
JP2008098610A (ja) | 2008-04-24 |
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