JP4700340B2 - 失透の制御された溶融石英物品 - Google Patents
失透の制御された溶融石英物品 Download PDFInfo
- Publication number
- JP4700340B2 JP4700340B2 JP2004503409A JP2004503409A JP4700340B2 JP 4700340 B2 JP4700340 B2 JP 4700340B2 JP 2004503409 A JP2004503409 A JP 2004503409A JP 2004503409 A JP2004503409 A JP 2004503409A JP 4700340 B2 JP4700340 B2 JP 4700340B2
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- fused silica
- exposed surface
- fused
- silica
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- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 157
- 239000005350 fused silica glass Substances 0.000 title claims description 92
- 150000001768 cations Chemical class 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 40
- 229910052906 cristobalite Inorganic materials 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 11
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 150000002910 rare earth metals Chemical class 0.000 claims description 11
- 238000007524 flame polishing Methods 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910001422 barium ion Inorganic materials 0.000 claims 1
- 229910001424 calcium ion Inorganic materials 0.000 claims 1
- 229910001427 strontium ion Inorganic materials 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 20
- 239000002019 doping agent Substances 0.000 description 13
- 229910052788 barium Inorganic materials 0.000 description 9
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 9
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 8
- 238000004031 devitrification Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001553 barium compounds Chemical class 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
- C03B32/02—Thermal crystallisation, e.g. for crystallising glass bodies into glass-ceramic articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0009—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing silica as main constituent
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
- Surface Treatment Of Glass (AREA)
Description
実施例1
外径32mm、内径24mmの溶融石英管をバリウムドープしたシリカ皮膜で被覆した。バリウムドーパントを溶融石英の表面に融着するために、まず硝酸バリウムを水に溶解し、コロイドシリカと混合して懸濁液を形成した。懸濁液中の硝酸バリウムの量は、火炎研磨後の皮膜内でケイ素位置上のバリウム置換が約4.5原子%となるのに十分であった。シリカを添加して、表面での最終バリウム濃度を制御するとともに、後続の火炎研磨によるドーパントの該表面への結合を容易にした。コロイドシリカを脱イオン化水に混合し、溶液に硝酸を添加することによりpH1.0に調節した。得られた懸濁液は2.0体積%のコロイドシリカを含有した。空気圧スプレーガンを用いて皮膜を管の外面に塗工した。スプレーした皮膜厚さは、火炎研磨前に約10μmであった。ガラス加工旋盤に取り付けた水素バーナーを用いて、バリウムドープしたコロイドシリカ皮膜を表面に融着した。チューブの回転速度は約5rpmで、バーナーの管に対する移動速度は約12インチ/分であった。合計で3層の皮膜を管に適用した。最終皮膜厚さは約5μm〜約10μmの範囲であった。被覆後、管を1100℃で30分間アニールした。
102 溶融石英本体
104 皮膜
Claims (3)
- 溶融石英物品の耐クリープ性を改良する方法であって、
上記溶融石英物品が溶融石英を含む本体と本体の露出面に設けられた皮膜とを備え、上記皮膜が、各々原子価4未満の複数の金属陽イオンを含んでおり、複数の金属陽イオンがアルカリ金属、アルカリ土類金属、希土類金属及びこれらの組合せの少なくとも1種の陽イオンを含み、少なくとも1種の複数の金属陽イオンが皮膜中に0.1原子%以上の濃度で存在し、本体内のバルクが1000℃〜1600℃の範囲内の温度でクリストバライト結晶構造への転移を起こし、当該方法が、
a)アルカリ金属、アルカリ土類金属、希土類金属及びこれらの組合せの少なくとも1種の陽イオンを含む複数の金属陽イオンをドープしたシリカスラリーを溶融石英物品の露出面に塗工する工程、
b)露出面上のシリカスラリーを乾燥する工程、
c)露出面を火炎研磨する工程であって、乾燥後のシリカスラリーが露出面にドープされた皮膜を形成する工程、及び
d)溶融石英物品及びドープされた皮膜を1000℃〜1600℃の範囲内の温度に加熱し、もって溶融石英物品内にクリストバライト結晶の核を形成し、クリストバライト結晶によって溶融石英物品の耐クリープ性を高める工程を含む方法。 - 前記シリカスラリーを複数の金属陽イオンでドープするに当たり、金属陽イオンがバリウムイオン、カルシウムイオン及びストロンチウムイオンからなる群から選択される、請求項1記載の方法。
- 前記シリカスラリーを溶融石英物品の露出面に塗工する工程が、
a)シリカスラリーを溶融石英物品の露出面にスプレーする工程、
b)シリカスラリーを溶融石英物品の露出面に塗布する工程又は
c)融石英物品をシリカスラリー含有浴に浸漬する工程のいずれかを含む、請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/063,754 US6875515B2 (en) | 2002-05-10 | 2002-05-10 | Fused quartz article having controlled devitrification |
US10/063,754 | 2002-05-10 | ||
PCT/US2003/012599 WO2003095384A1 (en) | 2002-05-10 | 2003-04-24 | Fused quartz article having controlled devitrification |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005525284A JP2005525284A (ja) | 2005-08-25 |
JP2005525284A5 JP2005525284A5 (ja) | 2006-06-15 |
JP4700340B2 true JP4700340B2 (ja) | 2011-06-15 |
Family
ID=29399072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004503409A Expired - Lifetime JP4700340B2 (ja) | 2002-05-10 | 2003-04-24 | 失透の制御された溶融石英物品 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6875515B2 (ja) |
EP (1) | EP1506142B1 (ja) |
JP (1) | JP4700340B2 (ja) |
KR (1) | KR100967034B1 (ja) |
CN (1) | CN1313407C (ja) |
AU (1) | AU2003231062A1 (ja) |
TW (1) | TW200400924A (ja) |
WO (1) | WO2003095384A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6641663B2 (en) * | 2001-12-12 | 2003-11-04 | Heracus Shin-Estu America | Silica crucible with inner layer crystallizer and method |
US7118789B2 (en) * | 2001-07-16 | 2006-10-10 | Heraeus Shin-Etsu America | Silica glass crucible |
JP3970692B2 (ja) * | 2002-05-31 | 2007-09-05 | 信越化学工業株式会社 | プリフォーム製造方法 |
JP5050363B2 (ja) * | 2005-08-12 | 2012-10-17 | 株式会社Sumco | 半導体シリコン基板用熱処理治具およびその製作方法 |
US20070151504A1 (en) * | 2005-10-19 | 2007-07-05 | General Electric Company | Quartz glass crucible and method for treating surface of quartz glass crucible |
US9139932B2 (en) | 2006-10-18 | 2015-09-22 | Richard Lee Hansen | Quartz glass crucible and method for treating surface of quartz glass crucible |
DE102007036407B4 (de) | 2007-02-28 | 2010-01-28 | Schott Ag | Verfahren zur Herstellung einer beschichteten dreidimensional verformten Scheibe aus Glaskeramik |
JP5146402B2 (ja) * | 2009-05-19 | 2013-02-20 | トヨタ自動車株式会社 | 炭素粒子含有被膜の成膜方法、伝熱部材、パワーモジュール、及び車両用インバータ |
US20110129784A1 (en) * | 2009-11-30 | 2011-06-02 | James Crawford Bange | Low thermal expansion doped fused silica crucibles |
JP5610570B2 (ja) * | 2010-07-20 | 2014-10-22 | 株式会社Sumco | シリカガラスルツボ、シリコンインゴットの製造方法 |
CN102453956B (zh) * | 2010-10-27 | 2016-03-23 | 杭州先进石英材料有限公司 | 一种石英玻璃坩埚及其制备方法 |
EP2864529A1 (en) * | 2012-06-25 | 2015-04-29 | Silicor Materials Inc. | Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification |
CN105382673B (zh) * | 2015-11-09 | 2018-01-09 | 盐城工学院 | 利用复合粉末介质火抛水钻珠坯的方法 |
EP3428132B1 (de) * | 2017-07-10 | 2023-08-30 | Heraeus Quarzglas GmbH & Co. KG | Quarzglasbauteil mit hoher thermischer stabilität, halbzeug dafür und verfahren zur herstellung desselben |
CN107793021B (zh) * | 2017-10-31 | 2021-07-30 | 江苏亨通光导新材料有限公司 | 适于光纤预制棒烧结炉的微晶化炉芯管及快速微晶化方法 |
CN113430479B (zh) * | 2021-06-25 | 2022-05-20 | 常州大学 | 钛及钛合金表面碳纳米材料改性的Ti-Al-Si-C镀层及其制备方法 |
Citations (7)
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JPS63236722A (ja) * | 1987-03-26 | 1988-10-03 | Shinetsu Sekiei Kk | 石英ガラス製品及びその製造方法 |
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JPH09110590A (ja) * | 1995-06-14 | 1997-04-28 | Memc Electron Materials Inc | 向上した無転位性能のための表面処理ルツボ |
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JP2003192391A (ja) * | 2001-10-16 | 2003-07-09 | Japan Siper Quarts Corp | 石英ガラスルツボの表面改質方法と表面改質ルツボ |
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EP0911429A1 (en) * | 1997-09-30 | 1999-04-28 | Heraeus Quarzglas GmbH | Quartz glass crucible for producing silicon single crystal and method for producing the crucible |
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US6734328B1 (en) * | 2002-11-08 | 2004-05-11 | Catalytic Distillation Technologies | Process for the selective hydrogenation of alkynes |
-
2002
- 2002-05-10 US US10/063,754 patent/US6875515B2/en not_active Expired - Lifetime
-
2003
- 2003-04-24 AU AU2003231062A patent/AU2003231062A1/en not_active Abandoned
- 2003-04-24 KR KR1020047018171A patent/KR100967034B1/ko active IP Right Grant
- 2003-04-24 CN CNB03816275XA patent/CN1313407C/zh not_active Expired - Lifetime
- 2003-04-24 JP JP2004503409A patent/JP4700340B2/ja not_active Expired - Lifetime
- 2003-04-24 EP EP03724186.6A patent/EP1506142B1/en not_active Expired - Lifetime
- 2003-04-24 WO PCT/US2003/012599 patent/WO2003095384A1/en active Application Filing
- 2003-05-09 TW TW092112720A patent/TW200400924A/zh unknown
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2004
- 2004-12-08 US US11/007,765 patent/US20050081564A1/en not_active Abandoned
Patent Citations (7)
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JPS63236722A (ja) * | 1987-03-26 | 1988-10-03 | Shinetsu Sekiei Kk | 石英ガラス製品及びその製造方法 |
JPH01126238A (ja) * | 1987-11-09 | 1989-05-18 | Shinetsu Sekiei Kk | 石英ガラス炉芯管 |
JPH0664938A (ja) * | 1991-12-06 | 1994-03-08 | Ppg Ind Inc | セリア含有高温uv吸収性被覆を有するガラス又は石英物品 |
JPH09110590A (ja) * | 1995-06-14 | 1997-04-28 | Memc Electron Materials Inc | 向上した無転位性能のための表面処理ルツボ |
JPH11199370A (ja) * | 1998-01-12 | 1999-07-27 | Toshiba Ceramics Co Ltd | 石英ガラスルツボとその製造方法 |
JP2002029890A (ja) * | 2000-07-19 | 2002-01-29 | Wacker Nsce Corp | シリコン単結晶引き上げ用石英ガラスルツボ |
JP2003192391A (ja) * | 2001-10-16 | 2003-07-09 | Japan Siper Quarts Corp | 石英ガラスルツボの表面改質方法と表面改質ルツボ |
Also Published As
Publication number | Publication date |
---|---|
US20030211335A1 (en) | 2003-11-13 |
KR100967034B1 (ko) | 2010-06-30 |
US6875515B2 (en) | 2005-04-05 |
WO2003095384A1 (en) | 2003-11-20 |
CN1665751A (zh) | 2005-09-07 |
EP1506142B1 (en) | 2019-12-11 |
TW200400924A (en) | 2004-01-16 |
US20050081564A1 (en) | 2005-04-21 |
JP2005525284A (ja) | 2005-08-25 |
CN1313407C (zh) | 2007-05-02 |
EP1506142A1 (en) | 2005-02-16 |
KR20050004851A (ko) | 2005-01-12 |
AU2003231062A1 (en) | 2003-11-11 |
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