JP4791745B2 - 光学媒質の光入出射部処理方法 - Google Patents
光学媒質の光入出射部処理方法 Download PDFInfo
- Publication number
- JP4791745B2 JP4791745B2 JP2005093145A JP2005093145A JP4791745B2 JP 4791745 B2 JP4791745 B2 JP 4791745B2 JP 2005093145 A JP2005093145 A JP 2005093145A JP 2005093145 A JP2005093145 A JP 2005093145A JP 4791745 B2 JP4791745 B2 JP 4791745B2
- Authority
- JP
- Japan
- Prior art keywords
- optical medium
- laser
- incident
- fine structure
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laser Beam Processing (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Lasers (AREA)
Description
Pθ=P0/(1±sinθ)
となる。このとき、入射レーザの走査方向が図中のイ方向(真上から照射角度θだけ傾けた側の方向)であれば
Pθ=P0/(1+sinθ)
となり、入射レーザの走査方向が図中のロ方向(上記イ方向と逆方向)であれば
Pθ=P0/(1−sinθ)
となることが確認される。
1b 光学媒質
1c 光学媒質
P 周期間隔
n1 屈折率
n2 屈折率
n3 屈折率
θ 照射角度
Claims (7)
- 屈折率が異なる2つの光学媒質の界面に凹凸状の周期微細構造を設けるにあたり、光学媒質の表面に金属薄膜を形成しておき、この金属薄膜に対して1光束の入射レーザを照射させ、照射箇所にて金属薄膜を除去するとともに、入射レーザを照射した際の散乱波とこの入射レーザとの相互作用によって、光学媒質の表面に周期微細構造を形成することを特徴とする光学媒質の光入出射部処理方法。
- 入射レーザとして、パルス幅が1ps未満の超高強度パルスレーザを用いることを特徴とする請求項1に記載の光学媒質の光入出射部処理方法。
- 入射レーザを金属薄膜に対して斜め方向から照射することを特徴とする請求項1又は2に記載の光学媒質の光入出射部処理方法。
- 入射レーザとして、円偏光レーザを用いることを特徴とする請求項1〜3のいずれか一項に記載の光学媒質の光入出射部処理方法。
- 入射レーザ照射後に、光学媒質のレーザ加工面のエッチング処理を行うことを特徴とする請求項1〜4のいずれか一項に記載の光学媒質の光入出射部処理方法。
- 金属薄膜として銅又は鉄、或いはその合金を含む材料を用いることを特徴とする請求項1〜5のいずれか一項に記載の光学媒質の光入出射部処理方法。
- 一方の光学媒質の表面に形成した周期微細構造を、他方の光学媒質と密接させることを特徴とする請求項1〜6のいずれか一項に記載の光学媒質の光入出射部処理方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005093145A JP4791745B2 (ja) | 2005-03-28 | 2005-03-28 | 光学媒質の光入出射部処理方法 |
TW095110382A TWI289209B (en) | 2005-03-28 | 2006-03-24 | Laser surface treatment |
US11/388,973 US8026459B2 (en) | 2005-03-28 | 2006-03-27 | Laser surface treatment |
AT06006249T ATE519136T1 (de) | 2005-03-28 | 2006-03-27 | Laser-oberflächenbehandlung |
EP06006249A EP1707994B1 (en) | 2005-03-28 | 2006-03-27 | Laser surface treatment |
KR1020060028048A KR100774436B1 (ko) | 2005-03-28 | 2006-03-28 | 레이저 표면 처리 방법 |
CNB2006100714331A CN100381838C (zh) | 2005-03-28 | 2006-03-28 | 激光表面处理 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005093145A JP4791745B2 (ja) | 2005-03-28 | 2005-03-28 | 光学媒質の光入出射部処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006276282A JP2006276282A (ja) | 2006-10-12 |
JP4791745B2 true JP4791745B2 (ja) | 2011-10-12 |
Family
ID=36616874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005093145A Expired - Fee Related JP4791745B2 (ja) | 2005-03-28 | 2005-03-28 | 光学媒質の光入出射部処理方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8026459B2 (ja) |
EP (1) | EP1707994B1 (ja) |
JP (1) | JP4791745B2 (ja) |
KR (1) | KR100774436B1 (ja) |
CN (1) | CN100381838C (ja) |
AT (1) | ATE519136T1 (ja) |
TW (1) | TWI289209B (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8178028B2 (en) * | 2006-11-06 | 2012-05-15 | Samsung Electronics Co., Ltd. | Laser patterning of nanostructure-films |
EP2104875A1 (de) * | 2006-12-22 | 2009-09-30 | Schleifring und Apparatebau GmbH | Optischer drehübertrager mit hoher rückflussdämpfung |
US7893385B2 (en) * | 2007-03-01 | 2011-02-22 | James Neil Rodgers | Method for enhancing gain and range of an RFID antenna |
JP5217218B2 (ja) * | 2007-04-09 | 2013-06-19 | 住友金属鉱山株式会社 | 吸収型多層膜ndフィルターチップの製造方法と吸収型多層膜ndフィルターチップ並びに吸収型多層膜ndフィルターチップの接合方法および吸収型多層膜ndフィルター付き絞り羽根とその製造方法 |
JP2008289818A (ja) * | 2007-05-28 | 2008-12-04 | Panasonic Electric Works Co Ltd | 光脱毛機器 |
US8279579B1 (en) * | 2007-12-10 | 2012-10-02 | Victor Rivas Alvarez | Energy transforming, storing and shielding devices |
US20100078418A1 (en) * | 2008-09-26 | 2010-04-01 | Electro Scientific Industries, Inc. | Method of laser micro-machining stainless steel with high cosmetic quality |
EP2532469A1 (en) * | 2010-02-05 | 2012-12-12 | Fujikura Ltd. | Substrate having surface microstructure |
JP5513227B2 (ja) * | 2010-04-08 | 2014-06-04 | 株式会社フジクラ | 微細構造の形成方法、レーザー照射装置、及び基板 |
CN102416527B (zh) * | 2011-07-29 | 2014-12-03 | 武汉理工大学 | 纳秒激光刻蚀亚波长周期性条纹的方法 |
CN102700281A (zh) * | 2012-04-26 | 2012-10-03 | 湖北联合天诚防伪技术股份有限公司 | 一种环保型激光精细脱铝的方法 |
US9925621B2 (en) | 2012-11-14 | 2018-03-27 | Perfect Ip, Llp | Intraocular lens (IOL) fabrication system and method |
US9023257B2 (en) | 2012-11-14 | 2015-05-05 | Perfect Ip, Llc | Hydrophilicity alteration system and method |
CN104942443B (zh) * | 2014-03-28 | 2017-01-25 | 汉达精密电子(昆山)有限公司 | 表面处理方法及其产品 |
WO2016164759A1 (en) * | 2015-04-08 | 2016-10-13 | The Trustees Of Columbia University In The City Of New York | Laser irradiation induced surface planarization of polycrystalline silicon films |
US10569365B2 (en) * | 2015-11-23 | 2020-02-25 | The Boeing Company | Method for preparing a fluid flow surface |
EP3429524B1 (en) | 2016-03-15 | 2019-11-20 | The Procter and Gamble Company | Methods and apparatuses for separating and positioning discrete articles |
JP6887210B2 (ja) * | 2016-07-27 | 2021-06-16 | 古河電気工業株式会社 | レーザ処理方法、接合方法、銅部材、多層プリント配線基板の製造方法、及び多層プリント配線基板 |
WO2018090010A1 (en) * | 2016-11-14 | 2018-05-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Antirefctive surface structures on optical elements |
WO2019082314A1 (ja) * | 2017-10-25 | 2019-05-02 | 株式会社ニコン | 加工装置、加工システム、及び、移動体の製造方法 |
CN108680976B (zh) * | 2018-07-25 | 2021-11-09 | 浙江夜光明光电科技股份有限公司 | 一种双色反光热贴膜的制作方法 |
DE102018221189A1 (de) | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Verfahren zum Bilden von Nanostrukturen an einer Oberfläche und optisches Element |
EP3956258A1 (en) * | 2019-04-15 | 2022-02-23 | Facebook Technologies, LLC. | Substrate modification by femto-second laser to achieve variable etch depth in dry etching |
US20220369455A1 (en) * | 2019-07-22 | 2022-11-17 | Technische Hochschule Aschaffenburg | Electrical connection pad with enhanced solderability and corresponding method for laser treating an electrical connection pad |
JP6822699B1 (ja) * | 2019-09-24 | 2021-01-27 | フェニックス電機株式会社 | レーザー照射装置、およびそれを用いた表面荒らし処理方法 |
CN111185678B (zh) * | 2020-02-07 | 2021-07-27 | 吉林大学 | 一种在透明材料表面和内部制备镂空结构的方法 |
CN112091418A (zh) * | 2020-09-10 | 2020-12-18 | 南开大学 | 一种宽禁带半导体表面深亚波长周期性条纹结构的制备方法 |
CN112799161A (zh) * | 2021-02-02 | 2021-05-14 | 廊坊市莱格光电仪器有限公司 | 一种金属柱面光栅及其制造工艺 |
WO2023113955A1 (en) * | 2021-12-16 | 2023-06-22 | Applied Materials, Inc. | Vacuum chamber, vacuum system and method for vacuum processing |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5072091A (en) * | 1989-04-03 | 1991-12-10 | The Local Government Of Osaka Prefecture | Method and apparatus for metal surface process by laser beam |
DE4225554A1 (de) * | 1992-08-03 | 1994-02-10 | Basf Magnetics Gmbh | Flächige Polyethylenterephthalat-Materialien mit geringer Oberflächenrauhigkeit sowie ein Verfahren zu ihrer Herstellung und ihre Verwendung |
JPH0811309B2 (ja) * | 1993-01-11 | 1996-02-07 | 大阪府 | 虹色発色加工方法 |
JPH06212451A (ja) * | 1993-01-11 | 1994-08-02 | Osaka Prefecture | 金属表面の加飾加工方法 |
US5558789A (en) * | 1994-03-02 | 1996-09-24 | University Of Florida | Method of applying a laser beam creating micro-scale surface structures prior to deposition of film for increased adhesion |
US6291797B1 (en) * | 1996-08-13 | 2001-09-18 | Nippon Sheet Glass Co., Ltd. | Laser machining method for glass substrate, diffraction type optical device fabricated by the machining method, and method of manufacturing optical device |
JP3270814B2 (ja) * | 1996-08-27 | 2002-04-02 | 日本板硝子株式会社 | 回折型光学素子の製造方法 |
US6785447B2 (en) * | 1998-10-09 | 2004-08-31 | Fujitsu Limited | Single and multilayer waveguides and fabrication process |
DE19853023A1 (de) * | 1998-11-18 | 2000-05-31 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung von Nanostrukturen in dünnen Filmen |
US6555781B2 (en) * | 1999-05-10 | 2003-04-29 | Nanyang Technological University | Ultrashort pulsed laser micromachining/submicromachining using an acoustooptic scanning device with dispersion compensation |
US6682688B1 (en) | 2000-06-16 | 2004-01-27 | Matsushita Electric Works, Ltd. | Method of manufacturing a three-dimensional object |
JP2002059700A (ja) * | 2000-08-22 | 2002-02-26 | Osaka Prefecture | 虹色発色加工法 |
TW506868B (en) | 2000-10-05 | 2002-10-21 | Matsushita Electric Works Ltd | Method of and apparatus for making a three-dimensional object |
JP2002372641A (ja) * | 2001-06-13 | 2002-12-26 | Ngk Insulators Ltd | 光導波路の製造方法、光導波路および波長変換デバイス |
JP4132750B2 (ja) * | 2001-08-17 | 2008-08-13 | 独立行政法人科学技術振興機構 | フェムト秒レーザー照射による量子ドット素子の作成方法 |
JP4035981B2 (ja) * | 2001-10-26 | 2008-01-23 | 松下電工株式会社 | 超短パルスレーザを用いた回路形成方法 |
JP4006994B2 (ja) * | 2001-12-18 | 2007-11-14 | 株式会社リコー | 立体構造体の加工方法、立体形状品の製造方法及び立体構造体 |
DE60237139D1 (de) | 2002-03-26 | 2010-09-09 | Panasonic Elec Works Co Ltd | Verfahren zur Herstellung eines gesinterten Formkörpers durch selektives Laser-Sintern |
WO2004035255A1 (ja) * | 2002-09-27 | 2004-04-29 | Nec Machinery Corporation | 周期構造作成方法および表面処理方法 |
DE10344901B4 (de) | 2002-09-30 | 2006-09-07 | Matsushita Electric Works, Ltd., Kadoma | Verfahren zum Herstellen eines dreidimensionalen gesinterten Produkts |
DE10344902B4 (de) | 2002-09-30 | 2009-02-26 | Matsushita Electric Works, Ltd., Kadoma | Verfahren zum Herstellen eines dreidimensionalen Objekts |
US7258720B2 (en) | 2003-02-25 | 2007-08-21 | Matsushita Electric Works, Ltd. | Metal powder composition for use in selective laser sintering |
JP4322045B2 (ja) * | 2003-05-13 | 2009-08-26 | 独立行政法人科学技術振興機構 | 微小バンプ作製方法 |
JP4542317B2 (ja) * | 2003-05-27 | 2010-09-15 | パナソニック電工株式会社 | 光学媒質の光入出射部処理方法 |
JP4092256B2 (ja) * | 2003-06-04 | 2008-05-28 | 財団法人レーザー技術総合研究所 | 金属密着面表面処理方法 |
-
2005
- 2005-03-28 JP JP2005093145A patent/JP4791745B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-24 TW TW095110382A patent/TWI289209B/zh not_active IP Right Cessation
- 2006-03-27 US US11/388,973 patent/US8026459B2/en active Active
- 2006-03-27 AT AT06006249T patent/ATE519136T1/de not_active IP Right Cessation
- 2006-03-27 EP EP06006249A patent/EP1707994B1/en active Active
- 2006-03-28 KR KR1020060028048A patent/KR100774436B1/ko not_active IP Right Cessation
- 2006-03-28 CN CNB2006100714331A patent/CN100381838C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR100774436B1 (ko) | 2007-11-08 |
TWI289209B (en) | 2007-11-01 |
KR20060104938A (ko) | 2006-10-09 |
JP2006276282A (ja) | 2006-10-12 |
EP1707994B1 (en) | 2011-08-03 |
US8026459B2 (en) | 2011-09-27 |
ATE519136T1 (de) | 2011-08-15 |
CN1841097A (zh) | 2006-10-04 |
US20060213880A1 (en) | 2006-09-28 |
CN100381838C (zh) | 2008-04-16 |
EP1707994A1 (en) | 2006-10-04 |
TW200634329A (en) | 2006-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4791745B2 (ja) | 光学媒質の光入出射部処理方法 | |
Liu et al. | High-aspect-ratio crack-free microstructures fabrication on sapphire by femtosecond laser ablation | |
Huang et al. | Micro-hole drilling and cutting using femtosecond fiber laser | |
Neuenschwander et al. | Processing of metals and dielectric materials with ps-laserpulses: results, strategies, limitations and needs | |
TWI661889B (zh) | 雷射處理方法與玻璃製品 | |
EP1990125B1 (en) | Glass processing method using laser | |
Dudutis et al. | Glass dicing with elliptical Bessel beam | |
JP2019532004A (ja) | 非軸対称ビームスポットを用いて透明被加工物をレーザ加工するための装置及び方法 | |
Karimelahi et al. | Rapid micromachining of high aspect ratio holes in fused silica glass by high repetition rate picosecond laser | |
JP5967405B2 (ja) | レーザによる割断方法、及びレーザ割断装置 | |
Momma et al. | Beam delivery of femtosecond laser radiation by diffractive optical elements. | |
JP5312761B2 (ja) | 切断用加工方法 | |
JP2006290630A (ja) | レーザを用いたガラスの加工方法 | |
CN113614045B (zh) | 采用脉冲激光束聚焦线和气相蚀刻对透明工件进行激光加工的方法 | |
TW201936309A (zh) | 複合材之斷開方法 | |
US20210114925A1 (en) | Crack-free glass substrate cutting and thinning method | |
JP2015533654A (ja) | ワークピースを加工するための方法及び装置 | |
Takayama et al. | Mechanisms of micro-groove formation on single-crystal diamond by a nanosecond pulsed laser | |
JP2008006652A (ja) | 硬脆材料板体の分割加工方法 | |
JP2008100284A (ja) | レーザ加工方法及びレーザ加工装置 | |
Wang et al. | Investigation on material removal efficiency in debris-free laser ablation of brittle substrates | |
Wang et al. | Improving the quality of femtosecond laser processing micro-hole array by coated with aluminum film on fused silica sheet | |
JP2013073894A (ja) | 膜加工方法 | |
JP4542317B2 (ja) | 光学媒質の光入出射部処理方法 | |
Liang et al. | Reutilization of workpiece-reflected energy assisted laser machining of metallic materials with high laser reflectivity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071217 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100708 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100715 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100727 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100927 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110628 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110722 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140729 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4791745 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140729 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140729 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |