JP4768606B2 - Laminate for wiring board - Google Patents
Laminate for wiring board Download PDFInfo
- Publication number
- JP4768606B2 JP4768606B2 JP2006510413A JP2006510413A JP4768606B2 JP 4768606 B2 JP4768606 B2 JP 4768606B2 JP 2006510413 A JP2006510413 A JP 2006510413A JP 2006510413 A JP2006510413 A JP 2006510413A JP 4768606 B2 JP4768606 B2 JP 4768606B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- laminate
- resin layer
- wiring board
- dianhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920001721 polyimide Polymers 0.000 claims description 59
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 46
- 239000009719 polyimide resin Substances 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000011888 foil Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 11
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims description 6
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 claims description 4
- 238000002411 thermogravimetry Methods 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000013585 weight reducing agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 36
- 229920005575 poly(amic acid) Polymers 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000011889 copper foil Substances 0.000 description 16
- 239000004642 Polyimide Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 12
- 150000004984 aromatic diamines Chemical class 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 10
- 150000004985 diamines Chemical class 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- -1 aromatic tetracarboxylic acid Chemical class 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- JTERLNYVBOZRHI-RIIGGKATSA-N [(2r)-3-[2-aminoethoxy(hydroxy)phosphoryl]oxy-2-[(5e,8e,11e,14e)-icosa-5,8,11,14-tetraenoyl]oxypropyl] (5e,8e,11e,14e)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C\C\C=C\C\C=C\C\C=C\CCCC(=O)OC[C@H](COP(O)(=O)OCCN)OC(=O)CCC\C=C\C\C=C\C\C=C\C\C=C\CCCCC JTERLNYVBOZRHI-RIIGGKATSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- UBGIFSWRDUBQIC-UHFFFAOYSA-N perylene-2,3,8,9-tetracarboxylic acid Chemical compound C1=CC2=C(C(O)=O)C(C(=O)O)=CC(C=3C4=C5C=C(C(C(O)=O)=C4C=CC=3)C(O)=O)=C2C5=C1 UBGIFSWRDUBQIC-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- YTCGLFCOUJIOQH-UHFFFAOYSA-N 1,3,4-oxadiazole-2,5-diamine Chemical compound NC1=NN=C(N)O1 YTCGLFCOUJIOQH-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RILDMGJCBFBPGH-UHFFFAOYSA-N 1,4,5,8-tetrachloronaphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(Cl)=C2C(Cl)=C(C(O)=O)C(C(=O)O)=C(Cl)C2=C1Cl RILDMGJCBFBPGH-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical group CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- SDWGBHZZXPDKDZ-UHFFFAOYSA-N 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=C(Cl)C(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O SDWGBHZZXPDKDZ-UHFFFAOYSA-N 0.000 description 1
- JZWGLBCZWLGCDT-UHFFFAOYSA-N 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound ClC1=CC(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O JZWGLBCZWLGCDT-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- FMXFZZAJHRLHGP-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)sulfonylphthalic acid Chemical compound OC(=O)C1=CC=CC(S(=O)(=O)C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O FMXFZZAJHRLHGP-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- DCSSXQMBIGEQGN-UHFFFAOYSA-N 4,6-dimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C=C1N DCSSXQMBIGEQGN-UHFFFAOYSA-N 0.000 description 1
- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- LURZHSJDIWXJOH-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-2,3,6,7-tetracarboxylic acid Chemical compound C1C(C(O)=O)C(C(O)=O)C(C)=C2CC(C(O)=O)C(C(O)=O)C(C)=C21 LURZHSJDIWXJOH-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- JPHCYDSESBJECU-UHFFFAOYSA-N 4-(4-amino-2-ethoxyphenyl)-3-ethoxyaniline Chemical compound CCOC1=CC(N)=CC=C1C1=CC=C(N)C=C1OCC JPHCYDSESBJECU-UHFFFAOYSA-N 0.000 description 1
- QSEBBATVRPETPS-UHFFFAOYSA-N 4-(4-amino-2-phenoxyphenyl)-3-phenoxyaniline Chemical compound C=1C(N)=CC=C(C=2C(=CC(N)=CC=2)OC=2C=CC=CC=2)C=1OC1=CC=CC=C1 QSEBBATVRPETPS-UHFFFAOYSA-N 0.000 description 1
- NFQBTSSEKRSELB-UHFFFAOYSA-N 4-(4-amino-2-propoxyphenyl)-3-propoxyaniline Chemical compound CCCOC1=CC(N)=CC=C1C1=CC=C(N)C=C1OCCC NFQBTSSEKRSELB-UHFFFAOYSA-N 0.000 description 1
- QQWWWAQUMVHHQN-UHFFFAOYSA-N 4-(4-amino-4-phenylcyclohexa-1,5-dien-1-yl)aniline Chemical group C1=CC(N)=CC=C1C1=CCC(N)(C=2C=CC=CC=2)C=C1 QQWWWAQUMVHHQN-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical group CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- IJJNNSUCZDJDLP-UHFFFAOYSA-N 4-[1-(3,4-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 IJJNNSUCZDJDLP-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- LKOKYHXXOGPYKR-UHFFFAOYSA-N 5-(3-aminophenyl)-2-phenylaniline Chemical group NC1=CC=CC(C=2C=C(N)C(=CC=2)C=2C=CC=CC=2)=C1 LKOKYHXXOGPYKR-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- IIEKUGPEYLGWQQ-UHFFFAOYSA-N 5-[4-(4-amino-2-methylpentyl)phenyl]-4-methylpentan-2-amine Chemical compound CC(N)CC(C)CC1=CC=C(CC(C)CC(C)N)C=C1 IIEKUGPEYLGWQQ-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- 240000005020 Acaciella glauca Species 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 0 CC(*)(*)*([N+](*1[N+](*(c(cc2*)ccc2-c2c(*)cc(C(C)(*)*)cc2)[N+](CI)[O-])[O-])[O-])[N+]1[O-] Chemical compound CC(*)(*)*([N+](*1[N+](*(c(cc2*)ccc2-c2c(*)cc(C(C)(*)*)cc2)[N+](CI)[O-])[O-])[O-])[N+]1[O-] 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XPUDAMVETXUJNH-UHFFFAOYSA-N NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1.NC1=CC=C(OC2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 Chemical compound NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1.NC1=CC=C(OC2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 XPUDAMVETXUJNH-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- AVRVTTKGSFYCDX-UHFFFAOYSA-N perylene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C2=C(C(C(=O)O)=CC=3C2=C2C=CC=3)C(O)=O)=C3C2=C(C(O)=O)C(C(O)=O)=CC3=C1 AVRVTTKGSFYCDX-UHFFFAOYSA-N 0.000 description 1
- CYPCCLLEICQOCV-UHFFFAOYSA-N phenanthrene-1,2,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 CYPCCLLEICQOCV-UHFFFAOYSA-N 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical group 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Laminated Bodies (AREA)
Description
本発明は、フレキシブルプリント配線板やHDDサスペンション等に用いられる配線基板用積層体である。 The present invention is a laminate for a wiring board used for flexible printed wiring boards, HDD suspensions and the like.
近年、電子機器の高性能化、高機能化及び小型化が急速に進んでおり、これに伴い電子機器に用いられる電子部品やそれらを実装する基板に対しても、より高密度で高性能なものへの要求が高まっている。フレキシブルプリント配線板(以下、FPCという)に関しては、細線加工、多層形成等が行われるようになり、FPCを構成する材料についても、薄型化及び寸法安定性が厳しく要求されるようになってきた。 In recent years, high performance, high functionality, and miniaturization of electronic devices have been rapidly progressing, and accordingly, electronic components used in electronic devices and substrates on which they are mounted have higher density and higher performance. The demand for things is increasing. With regard to flexible printed wiring boards (hereinafter referred to as FPC), fine wire processing, multilayer formation, etc. have been carried out, and thinning and dimensional stability have also been strictly demanded for the materials constituting FPC. .
一般的にFPCの絶縁フィルムには、諸特性に優れるポリイミド樹脂からなるフィルムが広く用いられており、絶縁フィルムと金属間の絶縁接着層には、低温加工性に優れるエポキシ樹脂やアクリル樹脂が用いられている。しかし、これらの接着層は耐熱性や熱的寸法安定性の低下の原因となるという問題があった。 In general, films made of polyimide resin with excellent properties are widely used for FPC insulation film, and epoxy resin and acrylic resin with excellent low-temperature workability are used for the insulating adhesive layer between the insulation film and metal. It has been. However, these adhesive layers have a problem of causing a decrease in heat resistance and thermal dimensional stability.
このような問題を解決するため、最近では、接着層を形成しないで金属上に直接ポリイミド樹脂層を塗工形成する方法が採用されてきている。特公平6-93537号公報には、ポリイミド樹脂層を熱膨張係数の異なる複数のポリイミドで多層化することにより、接着力及び熱的寸法安定性に優れたFPCを提供する方法が開示されている。しかしながら、それらのポリイミドは吸湿性が大きいため、半田浴に浸漬する際の膨れや、細線加工時の吸湿後の寸法変化による接続不良などの問題が誘起され、また一般に導体に用いられる金属は湿度膨張係数が0又は0に近いので、吸湿後の寸法変化は積層体の反り、カール、ねじれ等の不具合の原因ともなっていた。 In order to solve such problems, recently, a method in which a polyimide resin layer is directly formed on a metal without forming an adhesive layer has been adopted. Japanese Examined Patent Publication No. 6-93537 discloses a method of providing an FPC having excellent adhesion and thermal dimensional stability by multilayering a polyimide resin layer with a plurality of polyimides having different thermal expansion coefficients. . However, these polyimides have a high hygroscopic property, so problems such as swelling when immersed in a solder bath and poor connection due to dimensional changes after moisture absorption during thin wire processing are induced. Since the expansion coefficient was 0 or close to 0, the dimensional change after moisture absorption was a cause of problems such as warpage, curl, and twist of the laminate.
本発明に関連する先行文献には次の文献がある。
このような背景から近年、優れた低吸湿性・吸湿後寸法安定性を有するポリイミド樹脂からなるFPCへの要求が高まっており、それに用いるポリイミドの改良検討が種々行われている。例えば、特開平2-225522号公報及び特開2001-11177号公報では、フッ素系樹脂を導入することにより、疎水性を向上し低吸湿性を発現するポリイミドが提案されているが、製造コストがかさんだり、金属材料との接着性が悪いという欠点がある。そのほかの低吸湿化の取り組みについても、特開平5-271410号公報などに示されるように、高耐熱性・低熱膨張係数などのポリイミドの持つ良好な特性を保持したまま低吸湿性を実現するものではなかった。 Against this background, in recent years, there has been an increasing demand for FPC made of a polyimide resin having excellent low hygroscopicity and dimensional stability after moisture absorption, and various studies for improving the polyimide used therefor have been made. For example, in Japanese Patent Application Laid-Open No. 2-225522 and Japanese Patent Application Laid-Open No. 2001-11177, a polyimide that improves hydrophobicity and exhibits low hygroscopicity by introducing a fluorine-based resin is proposed. There is a disadvantage that it is covered and has poor adhesion to metal materials. As for other efforts to reduce moisture absorption, as shown in Japanese Patent Application Laid-Open No. 5-271410, etc., it achieves low moisture absorption while maintaining good characteristics such as high heat resistance and low thermal expansion coefficient. It wasn't.
なお、ポリイミドはジカルボン酸成分とジアミン成分とが交互に結合した構造を有するが、ジアミンとしてジアミノビフェニルやこれにメトキシが置換したジアミノビフェニル類を使用したポリイミドは特開2001-11177号公報や特開平5-271410号公報に例示されてはいるが、その具体例は示されておらず、これらがいかなる特性を有するか予測することはできない。 Polyimide has a structure in which dicarboxylic acid components and diamine components are alternately bonded. Polyimide using diaminobiphenyl or diaminobiphenyl substituted with methoxy as the diamine is disclosed in JP-A-2001-11177 and Although exemplified in Japanese Patent Application Laid-Open No. 5-271410, specific examples thereof are not shown, and it is impossible to predict what characteristics they have.
そこで本発明は、上記の問題点を解決し、優れた耐熱性、熱的寸法安定性を有し、かつ低吸湿性を実現したポリイミド層を有する配線基板用積層体を提供することを目的とする。 Therefore, the present invention has been made to solve the above problems, and to provide a laminate for a wiring board having a polyimide layer that has excellent heat resistance, thermal dimensional stability, and realizes low moisture absorption. To do.
本発明は、ポリイミド樹脂層の片面又は両面に金属箔を有する積層体において、前記ポリイミド樹脂層がポリイミド樹脂のみからなり、その少なくとも一層が下記一般式(1)で表される構造単位を10モル%以上含有し、前記ポリイミド樹脂層の線膨張係数が30ppm/℃以下、湿度膨張係数が10ppm/%RH以下であることを特徴とするフレキシブル配線基板用積層体である。
本発明の配線基板用積層体は、一層又は多層のポリイミド樹脂層の片面又は両面に、金属箔が積層されている構造を有する。ポリイミド樹脂層の少なくとも一層は、上記一般式(1)で表される構造単位を10モル%以上含有するものである。 The laminate for a wiring board of the present invention has a structure in which a metal foil is laminated on one side or both sides of a single-layer or multilayer polyimide resin layer. At least one of the polyimide resin layers contains 10 mol% or more of the structural unit represented by the general formula (1).
一般式(1)で表される構造単位において、式中、Ar1は芳香環を1個以上有する4価の有機基であり、芳香族テトラカルボン酸又はその酸二無水物等から生じる芳香族テトラカルボン酸残基ということができる。したがって、使用する芳香族テトラカルボン酸を説明することによりAr1が理解される。通常、上記構造単位を有するポリイミドを合成する場合、芳香族テトラカルボン酸二無水物が使用されることが多いので、好ましいAr1を、芳香族テトラカルボン酸二無水物を用いて以下に説明する。In the structural unit represented by the general formula (1), Ar 1 is a tetravalent organic group having one or more aromatic rings, and is an aromatic produced from an aromatic tetracarboxylic acid or an acid dianhydride thereof. It can be called a tetracarboxylic acid residue. Therefore, Ar 1 is understood by describing the aromatic tetracarboxylic acid used. Usually, when synthesizing a polyimide having the above structural unit, an aromatic tetracarboxylic dianhydride is often used, so preferable Ar 1 is described below using an aromatic tetracarboxylic dianhydride. .
上記芳香族テトラカルボン酸二無水物としては、特に限定されるものではなく公知のものを使用することができる。具体例を挙げると、ピロメリット酸二無水物、3,3',4,4'-ベンゾフェノンテトラカルボン酸二無水物、2,2',3,3'-ベンゾフェノンテトラカルボン酸二無水物、2,3,3',4'-ベンゾフェノンテトラカルボン酸二無水物、ナフタレン-2,3,6,7-テトラカルボン酸二無水物、ナフタレン-1 ,2,5,6-テトラカルボン酸二無水物、ナフタレン-1,2,4,5-テトラカルボン酸二無水物、ナフタレン-1,4,5,8-テトラカルボン酸二無水物、ナフタレン-1,2,6,7-テトラカルボン酸二無水物、4,8-ジメチル-1,2,3,5,6,7-ヘキサヒドロナフタレン-1,2,5,6-テトラカルボン酸二無水物、4,8-ジメチル-1,2,3,5,6,7-ヘキサヒドロナフタレン-2,3,6,7-テトラカルボン酸二無水物、2,6-ジクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、2,7-ジクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、2,3,6,7-テトラクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、1,4,5,8-テトラクロロナフタレン-2,3,6,7-テトラカルボン酸二無水物、3,3',4,4'-ビフェニルテトラカルボン酸二無水物、2,2',3,3'-ビフェニルテトラカルボン酸二無水物、2,3,3',4'-ビフェニルテトラカルボン酸二無水物、3,3'',4,4''-p-テルフェニルテトラカルボン酸二無水物、2,2'',3,3''-p-テルフェニルテトラカルボン酸二無水物、2,3,3'',4''-p-テルフェニルテトラカルボン酸二無水物、2,2-ビス(2,3-ジカルボキシフェニル)-プロパン二無水物、2,2-ビス(3,4-ジカルボキシフェニル)-プロパン二無水物、ビス(2,3-ジカルボキシフェニル)エーテル二無水物、ビス(2,3-ジカルボキシフェニル)メタン二無水物、ビス(3.4-ジカルボキシフェニル)メタン二無水物、ビス(2,3-ジカルボキシフェニル)スルホン二無水物、ビス(3,4-ジカルボキシフェニル)スルホン二無水物、1,1-ビス(2,3-ジカルボキシフェニル)エタン二無水物、1,1-ビス(3,4-ジカルボキシフェニル)エタン二無水物、ペリレン-2,3,8,9-テトラカルボン酸二無水物、ペリレン-3,4,9,10-テトラカルボン酸二無水物、ペリレン-4,5,10,11-テトラカルボン酸二無水物、ペリレン-5,6,11,12-テトラカルボン酸二無水物、フェナンスレン-1,2,7,8-テトラカルボン酸二無水物、フェナンスレン-1,2,6,7-テトラカルボン酸二無水物、フェナンスレン-1,2,9,10-テトラカルボン酸二無水物、シクロペンタン-1,2,3,4-テトラカルボン酸二無水物、ピラジン-2,3,5,6-テトラカルボン酸二無水物、ピロリジン-2,3,4,5-テトラカルボン酸二無水物、チオフェン-2,3,4,5-テトラカルボン酸二無水物、4,4'-オキシジフタル酸二無水物などが挙げられる。また、これらは単独で又は2種以上混合して用いることができる。 It does not specifically limit as said aromatic tetracarboxylic dianhydride, A well-known thing can be used. Specific examples include pyromellitic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 2 , 3,3 ', 4'-benzophenonetetracarboxylic dianhydride, naphthalene-2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,2,5,6-tetracarboxylic dianhydride , Naphthalene-1,2,4,5-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, naphthalene-1,2,6,7-tetracarboxylic dianhydride 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3 , 5,6,7-hexahydronaphthalene-2,3,6,7-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2, 7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphth Len-1,4,5,8-tetracarboxylic dianhydride, 1,4,5,8-tetrachloronaphthalene-2,3,6,7-tetracarboxylic dianhydride, 3,3 ', 4 , 4'-biphenyltetracarboxylic dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,3,3', 4'-biphenyltetracarboxylic dianhydride, 3, 3 '', 4,4 ''-p-terphenyltetracarboxylic dianhydride, 2,2``, 3,3 ''-p-terphenyltetracarboxylic dianhydride, 2,3,3 ' ', 4' '-p-terphenyltetracarboxylic dianhydride, 2,2-bis (2,3-dicarboxyphenyl) -propane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) ) -Propane dianhydride, bis (2,3-dicarboxyphenyl) ether dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3.4-dicarboxyphenyl) methane dianhydride, Bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) Enyl) sulfone dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, perylene-2,3 , 8,9-tetracarboxylic dianhydride, perylene-3,4,9,10-tetracarboxylic dianhydride, perylene-4,5,10,11-tetracarboxylic dianhydride, perylene-5, 6,11,12-tetracarboxylic dianhydride, phenanthrene-1,2,7,8-tetracarboxylic dianhydride, phenanthrene-1,2,6,7-tetracarboxylic dianhydride, phenanthrene-1 , 2,9,10-Tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, pyrrolidine -2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, and the like. Moreover, these can be used individually or in mixture of 2 or more types.
これらの中でも、ピロメリット酸二無水物(PMDA)、ナフタレン-2,3,6,7-テトラカルボン酸二無水物(NTCDA)及び3,3',4,4'-ビフェニルテトラカルボン酸二無水物(BPDA)から選ばれるものが好ましい。特に、低熱膨張係数を実現するためには、PMDA又はNTCDAを用いることが好ましい。これに適当な量のBPDAを混合して用いることにより、金属箔と同程度の熱膨張係数に調整することができ、実用的に要求される20ppm/℃以下の値に調整することが可能である。それにより積層体の反り、カールなどの発生を抑制することが可能である。これらの、芳香族テトラカルボン酸二無水物は、他の芳香族テトラカルボン酸二無水物と併用することも可能であるが、全体の50モル%以上、好ましくは70モル%以上使用することが良い。すなわち、テトラカルボン酸二無水物の選定にあたっては、具体的には重合加熱して得られるポリイミドの熱膨張係数と熱分解温度、ガラス転移温度など使用目的で必要とされる特性を発現するに適するものを選択することが好ましい。 Among these, pyromellitic dianhydride (PMDA), naphthalene-2,3,6,7-tetracarboxylic dianhydride (NTCDA) and 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride Preferred is one selected from products (BPDA). In particular, in order to realize a low thermal expansion coefficient, it is preferable to use PMDA or NTCDA. By mixing and using an appropriate amount of BPDA, the coefficient of thermal expansion can be adjusted to the same level as metal foil, and it can be adjusted to a practically required value of 20 ppm / ° C or less. is there. Thereby, it is possible to suppress the occurrence of warping, curling, and the like of the laminated body. These aromatic tetracarboxylic dianhydrides can be used in combination with other aromatic tetracarboxylic dianhydrides, but may be used in an amount of 50 mol% or more, preferably 70 mol% or more. good. That is, in selecting tetracarboxylic dianhydride, specifically, it is suitable for expressing the properties required for the purpose of use, such as the thermal expansion coefficient, thermal decomposition temperature, and glass transition temperature of polyimide obtained by polymerization and heating. It is preferable to select one.
本発明で用いられるポリイミド樹脂の合成で必須の成分として使用されるジアミンは、下記一般式(2)で表される芳香族ジアミンである。
ここで、Rは一般式(1)のRと同様な意味を有し、炭素数1〜6の炭化水素基であるが、好ましくは1〜4のアルキル基又は6のアリール基である。より好ましくはエチル基及びn‐プロピル基又はフェニル基である。 Here, R has the same meaning as R in the general formula (1) and is a hydrocarbon group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 4 or an aryl group having 6 carbon atoms. More preferred are an ethyl group, an n-propyl group, and a phenyl group.
本発明で使用されるポリイミド樹脂は、有利には芳香族テトラカルボン酸二無水物と上記一般式(2)で表される芳香族ジアミンを10モル%以上含むジアミンとを反応させて得ることができる。 The polyimide resin used in the present invention is preferably obtained by reacting an aromatic tetracarboxylic dianhydride with a diamine containing 10 mol% or more of the aromatic diamine represented by the general formula (2). it can.
本発明においては、上記一般式(2)で表される芳香族ジアミンと共に、それ以外の他のジアミンを90モル%以下の割合で使用することができ、そのことによって、共重合型のポリイミドとすることができる。 In the present invention, in addition to the aromatic diamine represented by the general formula (2), other diamines other than the aromatic diamine can be used in a proportion of 90 mol% or less. can do.
一般式(1)で表される構造単位は、ポリイミド樹脂層の少なくとも一層に10〜100モル%、好ましくは50〜100モル%、より好ましくは70〜100モル%、更に好ましくは90〜100モル%含むことがよい。 The structural unit represented by the general formula (1) is 10 to 100 mol%, preferably 50 to 100 mol%, more preferably 70 to 100 mol%, still more preferably 90 to 100 mol% in at least one layer of the polyimide resin layer. % Should be included.
一般式(2)で表される芳香族ジアミン以外の他のジアミンとしては、特に限定されるものではないが、例を挙げると、4,6-ジメチル-m-フェニレンジアミン、2,5-ジメチル-p-フェニレンジアミン、2,4-ジアミノメシチレン、4,4'-メチレンジ-o-トルイジン、4,4'-メチレンジ-2,6-キシリジン、4,4'-メチレン-2,6-ジエチルアニリン、2,4-トルエンジアミン、m-フェニレンジアミン、p-フェニレンジアミン、4,4'-ジアミノジフェニルプロパン、3,3'-ジアミノジフェニルプロパン、4,4'-ジアミノジフェニルエタン、3,3'-ジアミノジフェニルエタン、4,4'-ジアミノジフェニルメタン、3,3'-ジアミノジフェニルメタン、2,2-ビス[4-(4-アミノフェノキシ)フェニル]プロパン4,4'-ジアミノジフェニルスルフィド、3,3'-ジアミノジフェニルスルフィド、4,4'-ジアミノジフェニルスルホン、3,3'-ジアミノジフェニルスルホン、4,4'-ジアミノジフェニルエーテル、3,3-ジアミノジフェニルエーテル、1,3-ビス(3-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、1,4-ビス(4-アミノフェノキシ)ベンゼン、ベンジジン、3,3'-ジアミノビフェニル、3,3'-ジメチル-4,4'-ジアミノビフェニル、3,3'-ジメトキシベンジジン、4,4'-ジアミノ-p-テルフェニル、3,3'-ジアミノ-p-テルフェニル、ビス(p-アミノシクロヘキシル)メタン、ビス(p-β-アミノ-t-ブチルフェニル)エーテル、ビス(p-β-メチル-δ-アミノペンチル)ベンゼン、p-ビス(2-メチル-4-アミノペンチル)ベンゼン、p-ビス(1,1-ジメチル-5-アミノペンチル)ベンゼン、1,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,4-ビス(β-アミノ-t-ブチル)トルエン、2,4-ジアミノトルエン、m-キシレン-2,5-ジアミン、p-キシレン-2,5-ジアミン、m-キシリレンジアミン、p-キシリレンジアミン、2,6-ジアミノピリジン、2,5-ジアミノピリジン、2,5-ジアミノ-1,3,4-オキサジアゾール、ピペラジン、3,4,4’-トリアミノフェニルエーテル、2,2’-ジメチル-4,4’-ジアミノビフェニル、4,4’-ビス(4-アミノフェノキシ)ビフェニルなどが挙げられる。 The diamine other than the aromatic diamine represented by the general formula (2) is not particularly limited, but examples include 4,6-dimethyl-m-phenylenediamine and 2,5-dimethyl. -p-phenylenediamine, 2,4-diaminomesitylene, 4,4'-methylenedi-o-toluidine, 4,4'-methylenedi-2,6-xylidine, 4,4'-methylene-2,6-diethylaniline 2,4-toluenediamine, m-phenylenediamine, p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane, 3,3'- Diaminodiphenylethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane 4,4'-diaminodiphenyl sulfide, 3,3 ' -Diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfo 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene 1,4-bis (4-aminophenoxy) benzene, benzidine, 3,3'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 4,4 '-Diamino-p-terphenyl, 3,3'-diamino-p-terphenyl, bis (p-aminocyclohexyl) methane, bis (p-β-amino-t-butylphenyl) ether, bis (p-β -Methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-aminopentyl) benzene, p-bis (1,1-dimethyl-5-aminopentyl) benzene, 1,5-diaminonaphthalene, 2 , 6-Diaminonaphthalene, 2,4-bis (β-amino-t-butyl) toluene, 2,4-diaminotoluene, m-xy Len-2,5-diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino- 1,3,4-oxadiazole, piperazine, 3,4,4'-triaminophenyl ether, 2,2'-dimethyl-4,4'-diaminobiphenyl, 4,4'-bis (4-aminophenoxy ) Biphenyl and the like.
これらの中でも、4,4'-ジアミノジフェニルエーテル(DAPE)、1,3-ビス(4-アミノフェノキシ)ベンゼン(TPE-R)、p-フェニルジアミン(p-PDA)、2,2’-ジメチル-4,4’-ジアミノビフェニル(m-TB)などが好ましく用いられる。また、これらのジアミンを用いる場合、その好ましい使用割合は、全ジアミンの0〜50モル%、より好ましくは0〜30モル%の範囲である。 Among these, 4,4'-diaminodiphenyl ether (DAPE), 1,3-bis (4-aminophenoxy) benzene (TPE-R), p-phenyldiamine (p-PDA), 2,2'-dimethyl- 4,4′-diaminobiphenyl (m-TB) and the like are preferably used. Moreover, when using these diamines, the preferable usage rate is the range of 0-50 mol% of all the diamine, More preferably, it is the range of 0-30 mol%.
ポリイミド樹脂の前駆体となるポリアミド酸は、上記に示した芳香族ジアミン成分と芳香族テトラカルボン酸二無水物成分とを0.9〜1.1のモル比で使用し、有機極性溶媒中で重合する公知の方法によって製造することができる。すなわち、窒素気流下N,N-ジメチルアセトアミド、N-メチル-2-ピロリドンなどの有機溶媒に芳香族ジアミンを溶解させた後、芳香族テトラカルボン酸二無水物を加えて、室温で3〜4時間程度反応させることにより得られる。この際、分子末端は芳香族モノアミン又はジカルボン酸無水物で封止しても良い。 The polyamic acid used as the precursor of the polyimide resin is a known polymerized polymer in an organic polar solvent using the aromatic diamine component and the aromatic tetracarboxylic dianhydride component shown above in a molar ratio of 0.9 to 1.1. It can be manufactured by a method. That is, after dissolving an aromatic diamine in an organic solvent such as N, N-dimethylacetamide and N-methyl-2-pyrrolidone under a nitrogen stream, an aromatic tetracarboxylic dianhydride is added, and the mixture is added at room temperature for 3-4. It is obtained by reacting for about an hour. At this time, the molecular terminal may be sealed with an aromatic monoamine or dicarboxylic anhydride.
ナフタレン骨格を含有する芳香族テトラカルボン酸二無水物成分を用いる場合は、例えば、窒素気流下m-クレゾールに芳香族ジアミン成分を溶解させた後、触媒と芳香族テトラカルボン酸二無水物成分を加えて、190℃程度で10時間程度加熱し、その後、室温に戻してから更に8時間程度反応させることにより得られる。 When using an aromatic tetracarboxylic dianhydride component containing a naphthalene skeleton, for example, after dissolving the aromatic diamine component in m-cresol under a nitrogen stream, the catalyst and the aromatic tetracarboxylic dianhydride component are added. In addition, it can be obtained by heating at about 190 ° C. for about 10 hours and then reacting for about 8 hours after returning to room temperature.
上記反応により得られたポリアミド酸溶液を、支持体となる金属箔上あるいは金属箔上に形成された接着層上に、アプリケータを用いて塗布し、熱イミド化法又は化学イミド化法によりイミド化を行い、本発明の配線基板用積層体が得られる。熱イミド化は、150℃以下の温度で2〜60分予備乾燥した後、通常130〜360℃程度の温度で2〜30分程度熱処理することにより行われる。化学イミド化は、ポリアミド酸に脱水剤と触媒を加えることにより行われる。用いられる金属箔としては銅箔又はSUS箔が好ましく、その好ましい厚み範囲も50μm以下、有利には5〜40μmである。銅箔厚みは、薄い方がファインパターンの形成に適し、そのような観点からは8〜15μmの範囲が好ましい。 The polyamic acid solution obtained by the above reaction is applied onto a metal foil serving as a support or an adhesive layer formed on the metal foil using an applicator, and imide is obtained by a thermal imidization method or a chemical imidization method. The laminated body for a wiring board of the present invention is obtained. Thermal imidization is performed by pre-drying at a temperature of 150 ° C. or lower for 2 to 60 minutes and then heat-treating at a temperature of about 130 to 360 ° C. for about 2 to 30 minutes. Chemical imidization is performed by adding a dehydrating agent and a catalyst to polyamic acid. The metal foil used is preferably a copper foil or a SUS foil, and its preferred thickness range is also 50 μm or less, advantageously 5 to 40 μm. A thinner copper foil is suitable for forming a fine pattern. From such a viewpoint, a range of 8 to 15 μm is preferable.
ポリイミド樹脂層は単層であっても多層であってもよい。多層のポリイミド樹脂層の場合は、ポリアミド酸溶液を塗布して乾燥する操作を繰り返した後、熱処理して溶剤除去し、これを更に高温で熱処理してイミド化することにより、多層構造のポリイミド系樹脂層を形成できる。この時、形成されるポリイミド樹脂層の総厚みは、3〜75μmの範囲が好ましい。多層である場合は、その少なくとも1層が一般式(1)で表される構造単位を10モル%以上含有するポリイミド樹脂層(以下、本ポリイミド樹脂層ともいう)である必要があり、その厚みはポリイミド樹脂層全体の30%以上、好ましくは50%以上とすることがよい。 The polyimide resin layer may be a single layer or a multilayer. In the case of a multilayer polyimide resin layer, after repeating the operation of applying and drying a polyamic acid solution, the solvent is removed by heat treatment, and this is further heat treated at a high temperature to imidize to obtain a polyimide structure having a multilayer structure. A resin layer can be formed. At this time, the total thickness of the formed polyimide resin layer is preferably in the range of 3 to 75 μm. In the case of a multilayer, at least one of the layers must be a polyimide resin layer (hereinafter also referred to as the present polyimide resin layer) containing 10 mol% or more of the structural unit represented by the general formula (1), and its thickness Is 30% or more of the entire polyimide resin layer, preferably 50% or more.
また、両面に金属箔を有する配線基板用積層体を製造する場合は、上記方法により得られた片面配線基板用積層体のポリイミド樹脂層上に、直接あるいは接着層を形成した後、金属箔を加熱圧着することにより得られる。この加熱圧着時の熱プレス温度については、特に限定されるものではないが、使用されるポリイミド樹脂のガラス転移温度以上であることが望ましい。また、熱プレス圧力については、使用するプレス機器の種類にもよるが、1〜500kg/cm2の範囲であることが望ましい。更に、このとき用いられる好ましい金属箔は、上記した金属箔と同様のものを用いることができ、その好ましい厚みも50μm以下、より好ましくは5〜40μmの範囲である。Moreover, when manufacturing the laminated body for wiring boards which has metal foil on both surfaces, after forming a metal foil directly or after forming an adhesive layer on the polyimide resin layer of the laminated body for single-sided wiring boards obtained by the said method, It is obtained by thermocompression bonding. The hot pressing temperature at the time of the thermocompression bonding is not particularly limited, but it is desirable to be not lower than the glass transition temperature of the polyimide resin used. The hot press pressure is preferably in the range of 1 to 500 kg / cm 2 , although it depends on the type of press equipment used. Furthermore, the preferable metal foil used at this time can use the thing similar to the above-mentioned metal foil, The preferable thickness is also 50 micrometers or less, More preferably, it is the range of 5-40 micrometers.
本発明の配線基板用積層体を構成するポリイミド樹脂層は、一般式(2)で表される芳香族ジアミンと、これと併せて使用される他の芳香族ジアミンと芳香族テトラカルボン酸又はその酸二無水物との種々の組み合わせにより特性を制御することができる。好ましいポリイミド樹脂層は、線膨張係数が30ppm/℃以下、23℃における貯蔵弾性率が6GPa以下、かつ吸湿率が0.8wt%以下のものであるが、耐熱性の観点からは、ガラス転移温度は350℃以上、また、熱重量分析における5%重量減少温度(Td5%)は500〜600℃の範囲にあるものがよく、更には、湿度膨張係数がTD、MD方向でいずれも10ppm/%RH以下であるものがよい。なお、5%重量減少温度を、熱分解温度ともいう。 The polyimide resin layer constituting the laminate for a wiring board of the present invention comprises an aromatic diamine represented by the general formula (2) and other aromatic diamines and aromatic tetracarboxylic acids used in combination with the aromatic diamines. Properties can be controlled by various combinations with acid dianhydrides. A preferred polyimide resin layer has a linear expansion coefficient of 30 ppm / ° C. or less, a storage elastic modulus at 23 ° C. of 6 GPa or less, and a moisture absorption rate of 0.8 wt% or less. From the viewpoint of heat resistance, the glass transition temperature is 350 ° C or higher, and 5% weight loss temperature (Td5%) in thermogravimetric analysis should be in the range of 500-600 ° C. Furthermore, humidity expansion coefficient is 10ppm /% RH in both TD and MD directions. The following are good. The 5% weight loss temperature is also referred to as the thermal decomposition temperature.
以下、実施例に基づいて本発明の内容を具体的に説明するが、本発明はこれらの実施例の範囲に限定されるものではない。 EXAMPLES Hereinafter, although the content of this invention is demonstrated concretely based on an Example, this invention is not limited to the range of these Examples.
実施例等に用いた略号を下記に示す。
・PMDA:ピロメリット酸二無水物
・BPDA:3,3',4,4'-ビフェニルテトラカルボン酸二無水物
・m-MOB:2,2'-ジメトキシベンジジン
・m-EOB:2,2'-ジエトキシベンジジン
・m-POB:2,2'-ジ-n-プロピルオキシベンジジン
・m-PHOB:2,2’-ジフェニルオキシベンジジン
・DAPE:4,4'-ジアミノジフェニルエーテル
・m-TB:2,2’-ジメチルベンジジン
・TPE-R:1,3-ビス(4-アミノフェノキシ)ベンゼン
・BAPP:2,2-ビス(4-アミノフェノキシフェニル)プロパン
・DMAc:N,N-ジメチルアセトアミドAbbreviations used in Examples and the like are shown below.
-PMDA: pyromellitic dianhydride-BPDA: 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride-m-MOB: 2,2'-dimethoxybenzidine-m-EOB: 2,2' -Diethoxybenzidine, m-POB: 2,2'-di-n-propyloxybenzidine, m-PHOB: 2,2'-diphenyloxybenzidine, DAPE: 4,4'-diaminodiphenyl ether, m-TB: 2 , 2'-dimethylbenzidine, TPE-R: 1,3-bis (4-aminophenoxy) benzene, BAPP: 2,2-bis (4-aminophenoxyphenyl) propane, DMAc: N, N-dimethylacetamide
また、実施例中の各種物性の測定方法と条件を以下に示す。
[ガラス転移温度(Tg)、貯蔵弾性率(E')]
各実施例で得たポリイミドフィルム(10mm×22.6mm)を動的熱機械分析(DMA)装置にて20℃から500℃まで5℃/分で昇温させたときの動的粘弾性を測定し、ガラス転移温度(tanδ極大値)及び23℃、100℃の貯蔵弾性率(E'23及びE'100)を求めた。In addition, measurement methods and conditions for various physical properties in the examples are shown below.
[Glass transition temperature (Tg), storage elastic modulus (E ')]
The dynamic viscoelasticity was measured when the polyimide film (10mm × 22.6mm) obtained in each example was heated from 20 ° C to 500 ° C at 5 ° C / min with a dynamic thermomechanical analysis (DMA) device. The glass transition temperature (tan δ maximum value) and the storage elastic modulus (E ′ 23 and E ′ 100 ) at 23 ° C. and 100 ° C. were determined.
[線膨張係数(CTE)の測定]
3mm ×15mmのサイズのポリイミドフィルムを、熱機械分析(TMA)装置にて5.0gの荷重を加えながら一定の昇温速度で30℃から260℃の温度範囲で引張り試験を行った。温度に対するポリイミドフィルムの伸び量から線膨張係数を求めた。[Measurement of linear expansion coefficient (CTE)]
A tensile test was performed on a polyimide film having a size of 3 mm × 15 mm in a temperature range from 30 ° C. to 260 ° C. at a constant temperature increase rate while applying a 5.0 g load with a thermomechanical analysis (TMA) apparatus. The linear expansion coefficient was determined from the amount of elongation of the polyimide film with respect to temperature.
[熱分解温度(Td5%)の測定]
10〜20mgのポリイミドフィルムを、熱重量分析(TG)装置にて一定の速度で30℃から550℃まで昇温させたときの重量変化を測定し、5%重量減少温度(Td5%)を求めた。[Measurement of thermal decomposition temperature (Td5%)]
Measure the change in weight of a 10-20 mg polyimide film when heated from 30 ° C to 550 ° C at a constant rate using a thermogravimetric analysis (TG) device to obtain a 5% weight loss temperature (Td5%). It was.
[吸湿率(RMA)の測定]
4cm×20cmのポリイミドフィルム(各3枚)を、120℃で2時間乾燥した後、23℃/50%RHの恒温恒湿室で24時間以上静置し、その前後の重量変化から次式により求めた。
RMA(%)=[(吸湿後重量-乾燥後重量)/乾燥後重量]×100[Measurement of moisture absorption rate (RMA)]
4cm x 20cm polyimide films (3 sheets each) are dried at 120 ° C for 2 hours, then left in a constant temperature and humidity chamber at 23 ° C / 50% RH for 24 hours or more. Asked.
RMA (%) = [(weight after moisture absorption-weight after drying) / weight after drying] × 100
[湿度膨張係数(CHE)の測定]
35cm×35cmのポリイミド/銅箔積層体の銅箔上にエッチングレジスト層を設け、これを一辺が30cmの正方形の四辺に10cm間隔で直径1mmの点が12箇所配置するパターンに形成した。エッチングレジスト開孔部の銅箔露出部分をエッチングし、12箇所の銅箔残存点を有するCHE測定用ポリイミドフィルムを得た。このフィルムを120℃で2時間乾燥した後、23℃/50%RHの恒温恒湿機で24時間以上静置し、二次元測長機により銅箔点間の寸法変化(0〜50%RH)を測定して、湿度膨張係数を求めた。
[Measurement of humidity expansion coefficient (CHE)]
An etching resist layer was provided on a copper foil of a polyimide / copper foil laminate of 35 cm × 35 cm, and this was formed into a pattern in which 12 points with a diameter of 1 mm were arranged at 10 cm intervals on four sides of a 30 cm square. The exposed portion of the copper foil in the opening portion of the etching resist was etched to obtain a polyimide film for CHE measurement having 12 copper foil remaining points. After drying this film at 120 ° C for 2 hours, leave it at 23 ° C / 50% RH constant temperature and humidity chamber for more than 24 hours, and measure the dimensional change (0-50% RH) between the copper foil points with a two-dimensional measuring machine. ) Was measured to determine the humidity expansion coefficient.
合成例1〜18
実施例及び比較例で使用するポリアミド酸を合成した。
窒素気流下で、表1に示したジアミンを100mlのセパラブルフラスコの中で攪拌しながら溶剤DMAc43gに溶解させた。次いで、表1に示したテトラカルボン酸二無水物を加えた。その後、溶液を室温で3〜4時間攪拌を続けて重合反応を行い、ポリイミド前駆体となる18種類のポリアミド酸(PA)A〜Rの黄〜茶褐色の粘稠な溶液を得た。それぞれのポリアミド酸溶液の還元粘度(ηsp/C)は3〜6の範囲内であった。また、重量平均分子量Mwを表1に示した。Synthesis Examples 1-18
Polyamic acid used in Examples and Comparative Examples was synthesized.
Under a nitrogen stream, the diamine shown in Table 1 was dissolved in 43 g of solvent DMAc with stirring in a 100 ml separable flask. Subsequently, the tetracarboxylic dianhydride shown in Table 1 was added. Thereafter, the solution was stirred at room temperature for 3 to 4 hours to carry out a polymerization reaction to obtain a yellow-brown viscous solution of 18 kinds of polyamic acids (PA) A to R to be polyimide precursors. The reduced viscosity (η sp / C) of each polyamic acid solution was in the range of 3-6. The weight average molecular weight Mw is shown in Table 1.
実施例1
合成例1〜18で得たポリアミド酸(PA)A〜Rの溶液を、塗工する前に、DMAcを加えて粘度を約250poisに調整した。それから、それぞれ35μmの厚さの銅箔上にアプリケータを用いて乾燥後の膜厚が約15μmとなるように塗布し、50〜130℃で2〜60分間乾燥した後、更に130℃、160℃、200℃、230℃、280℃、320℃、360℃で各2〜30分段階的な熱処理を行い、銅箔上にポリイミド層を形成して、18種の積層体を得た。合成例1で得たポリアミド酸Aの溶液から得た積層体を積層体Aとし、以下同様とする。なお、合成例10で得たポリアミド酸Jの溶液を使用して得た積層体Jは比較例となる。また、合成例18で得たポリアミド酸Rの溶液を使用して得た積層体Rは、後記実施例の積層体M1〜M3のポリイミド層の1層の特性を評価するためのものである。Example 1
Before applying the solutions of polyamic acids (PA) A to R obtained in Synthesis Examples 1 to 18, DMAc was added to adjust the viscosity to about 250 pois. Then, using an applicator on each 35 μm thick copper foil, the film thickness after drying is about 15 μm, dried at 50 to 130 ° C. for 2 to 60 minutes, then further 130 ° C., 160 Stepwise heat treatment was performed at 2 ° C. for 2 to 30 minutes at 200 ° C., 200 ° C., 230 ° C., 280 ° C., 320 ° C. and 360 ° C., and a polyimide layer was formed on the copper foil to obtain 18 kinds of laminates. The laminate obtained from the polyamic acid A solution obtained in Synthesis Example 1 is designated as laminate A, and so on. The laminate J obtained using the polyamic acid J solution obtained in Synthesis Example 10 is a comparative example. Further, the laminate R obtained by using the solution of the polyamic acid R obtained in Synthesis Example 18 is for evaluating the characteristics of one polyimide layer of the laminates M1 to M3 in Examples described later.
実施例1の積層体A〜Rについて、塩化第二鉄水溶液を用いて銅箔をエッチング除去して18種類のポリイミドフィルムを作成し、ガラス転移温度(Tg)、貯蔵弾性率(E')、熱膨張係数(CTE)、5%重量減少温度(Td5%)、吸湿率(RMA)及び湿度膨張係数(CHE)を測定した。
各測定結果を、表2に示す。For the laminates A to R of Example 1, the copper foil was etched away using an aqueous ferric chloride solution to create 18 types of polyimide films, glass transition temperature (Tg), storage elastic modulus (E ′), The coefficient of thermal expansion (CTE), 5% weight loss temperature (Td5%), moisture absorption rate (RMA), and humidity expansion coefficient (CHE) were measured.
Table 2 shows the measurement results.
実施例2
18μmの厚さの銅箔上に合成例18で調製したポリアミド酸Rの溶液を25μmの厚みで均一に塗布したのち、130℃で加熱乾燥し溶剤を除去した。次に、その上に積層するように合成例5で調製したポリアミド酸Eの溶液を195μmの厚みで均一に塗布し、70℃〜130℃で加熱乾燥し溶剤を除去した。更に、ポリアミド酸E層上に合成例18で調製したポリアミド酸Rの溶液を37μmの厚みで均一に塗布し、135℃で加熱乾燥し溶剤を除去した。この後、室温から360℃まで約5hrかけて熱処理しイミド化させ、3層のポリイミド系樹脂層からなる合計厚み約25μmの絶縁樹脂層が銅箔上に形成された積層体M1を得た。銅箔上に塗布したポリアミド酸樹脂層の乾燥後の厚みは、R/E/Rの順に、約2.5μm/約19μm/約3.5μmである。Example 2
The solution of polyamic acid R prepared in Synthesis Example 18 was uniformly applied to a thickness of 25 μm on a copper foil having a thickness of 18 μm, and then dried by heating at 130 ° C. to remove the solvent. Next, the polyamic acid E solution prepared in Synthesis Example 5 was uniformly applied to a thickness of 195 μm so as to be laminated thereon, and dried by heating at 70 ° C. to 130 ° C. to remove the solvent. Further, the polyamic acid R solution prepared in Synthesis Example 18 was uniformly applied on the polyamic acid E layer in a thickness of 37 μm, and dried by heating at 135 ° C. to remove the solvent. Thereafter, heat treatment was performed from room temperature to 360 ° C. for about 5 hours to imidize, and thus a laminate M1 in which an insulating resin layer composed of three polyimide resin layers and having a total thickness of about 25 μm was formed on a copper foil was obtained. The thickness of the polyamic acid resin layer applied on the copper foil after drying is about 2.5 μm / about 19 μm / about 3.5 μm in the order of R / E / R.
実施例3〜4
実施例2と同様にして、3層のポリイミド系樹脂層からなる層合計厚み約25μmの絶縁樹脂層が銅箔上に形成された積層体M2及びM3を得た。銅箔上に塗布したポリアミド酸溶液の種類と乾燥後厚みは、順に、M2はR約2.5μm/O約19μm/R約3.5μmであり、M3はR約2.5μm/Q約19μm/R約3.5μmである。Examples 3-4
In the same manner as in Example 2, laminates M2 and M3 in which an insulating resin layer having a total thickness of about 25 μm composed of three polyimide resin layers was formed on a copper foil were obtained. The type of polyamic acid solution applied on the copper foil and the thickness after drying are, in order, M2 about R 2.5μm / O about 19μm / R about 3.5μm, M3 about R about 2.5μm / Q about 19μm / R about 3.5 μm.
実施例2〜4で得た積層体M1〜M3について、接着性強度を測定した。また、塩化第二鉄水溶液を用いて銅箔をエッチング除去してポリイミドフィルムを作成し、3層のポリイミド層での熱膨張係数(CTE)を測定した。
各測定結果を、表3に示す。The adhesive strength of the laminates M1 to M3 obtained in Examples 2 to 4 was measured. Moreover, the copper foil was etched away using a ferric chloride aqueous solution to prepare a polyimide film, and the thermal expansion coefficient (CTE) of the three polyimide layers was measured.
Table 3 shows the measurement results.
本発明の配線基板用積層体は、絶縁層となるポリイミド樹脂層が耐熱性に優れ、低吸湿、かつ寸法安定性にも優れており、接着層由来の諸問題を伴わずに湿度による反りを抑制する効果をも有する。また、絶縁層のポリイミド樹脂層が、TD方向とMD方向での湿度膨張係数の差が小さいことから、面内に異方性がないという特徴を有し、電子材料分野の部品に広く適用することができる。特に、FPCやHDDサスペンション用基板等の用途に有用である。 In the laminate for a wiring board of the present invention, the polyimide resin layer serving as an insulating layer has excellent heat resistance, low moisture absorption, and excellent dimensional stability, and is free from warping due to humidity without causing problems due to the adhesive layer. It also has an inhibitory effect. In addition, the polyimide resin layer of the insulating layer has a feature that there is no in-plane anisotropy because the difference in humidity expansion coefficient between the TD direction and the MD direction is small, and it is widely applied to parts in the electronic material field be able to. It is particularly useful for applications such as FPC and HDD suspension substrates.
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JP4962056B2 (en) * | 2007-03-09 | 2012-06-27 | 東洋紡績株式会社 | Copper-clad laminated film and method for producing the same |
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JP6839594B2 (en) * | 2016-04-27 | 2021-03-10 | 日鉄ケミカル&マテリアル株式会社 | Polyimide film and copper-clad laminate |
JP7248394B2 (en) * | 2017-09-29 | 2023-03-29 | 日鉄ケミカル&マテリアル株式会社 | Polyimide film and metal-clad laminate |
CN110241389A (en) * | 2018-03-08 | 2019-09-17 | 日铁化学材料株式会社 | Deposition mask, deposition mask form the manufacturing method formed with polyamic acid, deposition mask with laminated body and deposition mask |
CN109575831A (en) * | 2018-11-20 | 2019-04-05 | 深圳市弘海电子材料技术有限公司 | Low bounce-back power cover film and preparation method thereof |
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JPS60250031A (en) * | 1984-05-28 | 1985-12-10 | Hitachi Ltd | Low-thermal expansion resin material |
JPH06234916A (en) * | 1993-02-09 | 1994-08-23 | Central Glass Co Ltd | Low-stress polyimide composition and precursor composition solution |
WO1998008216A1 (en) * | 1996-08-19 | 1998-02-26 | Nippon Steel Chemical Co., Ltd. | Laminate for hdd suspension and its manufacture |
JPH1154862A (en) * | 1997-08-05 | 1999-02-26 | Kanegafuchi Chem Ind Co Ltd | Polyimide film for hard disk suspension wiring base material |
JPH11154314A (en) * | 1997-11-21 | 1999-06-08 | Ube Ind Ltd | Magnetic head suspension and its production |
JP2000198842A (en) * | 1998-12-28 | 2000-07-18 | Nippon Telegr & Teleph Corp <Ntt> | Polyimide for optical substrate and polyimide substrate for optical use |
JP2002338710A (en) * | 2001-03-16 | 2002-11-27 | Sumitomo Bakelite Co Ltd | Plastic base plate for indication element |
-
2005
- 2005-02-21 KR KR1020067017525A patent/KR101077405B1/en active IP Right Grant
- 2005-02-21 WO PCT/JP2005/002729 patent/WO2005084088A1/en active Application Filing
- 2005-02-21 CN CNB200580005515XA patent/CN100566503C/en not_active Expired - Fee Related
- 2005-02-21 JP JP2006510413A patent/JP4768606B2/en not_active Expired - Fee Related
- 2005-02-24 TW TW094105641A patent/TW200528490A/en not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60250031A (en) * | 1984-05-28 | 1985-12-10 | Hitachi Ltd | Low-thermal expansion resin material |
JPH06234916A (en) * | 1993-02-09 | 1994-08-23 | Central Glass Co Ltd | Low-stress polyimide composition and precursor composition solution |
WO1998008216A1 (en) * | 1996-08-19 | 1998-02-26 | Nippon Steel Chemical Co., Ltd. | Laminate for hdd suspension and its manufacture |
JPH1154862A (en) * | 1997-08-05 | 1999-02-26 | Kanegafuchi Chem Ind Co Ltd | Polyimide film for hard disk suspension wiring base material |
JPH11154314A (en) * | 1997-11-21 | 1999-06-08 | Ube Ind Ltd | Magnetic head suspension and its production |
JP2000198842A (en) * | 1998-12-28 | 2000-07-18 | Nippon Telegr & Teleph Corp <Ntt> | Polyimide for optical substrate and polyimide substrate for optical use |
JP2002338710A (en) * | 2001-03-16 | 2002-11-27 | Sumitomo Bakelite Co Ltd | Plastic base plate for indication element |
Also Published As
Publication number | Publication date |
---|---|
TW200528490A (en) | 2005-09-01 |
KR20070007296A (en) | 2007-01-15 |
KR101077405B1 (en) | 2011-10-26 |
TWI372156B (en) | 2012-09-11 |
WO2005084088A1 (en) | 2005-09-09 |
CN100566503C (en) | 2009-12-02 |
CN1943285A (en) | 2007-04-04 |
JPWO2005084088A1 (en) | 2008-01-17 |
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