JP4691151B2 - Electron beam drawing device - Google Patents

Description

  The present invention relates to an electron beam writing method and apparatus for shaping and deflecting an electron beam emitted from an electron gun, further reducing and projecting the electron beam, and irradiating the sample on the sample.

  Pattern drawing by such an electron beam drawing apparatus can be drawn with an accuracy of resolution at the wavelength level of an electron beam (electron beam) shorter than the light wavelength, and a pattern can be formed with high resolution.

  On the other hand, unlike the mask drawing method by light exposure, this pattern drawing has a problem that it takes time to draw because the completed pattern is directly drawn by a small divided pattern beam.

  Still, because it has the feature of being able to form high-precision fine line patterns, it is promising for semiconductor manufacturing for high-mix low-volume production such as ASIC (application-specific integrated circuit), which is the next technology of photolithographic lithography technology. Has developed as a powerful tool.

  As a pattern drawing method, there is a first method in which a pattern is formed by scanning the entire surface of a sample while controlling a small round electron beam on / off, and an electron beam that has passed through a tensile aperture is formed on the sample surface. There is a second method of VSB drawing in which a pattern is drawn by irradiating the pattern.

  Among them, the VSB drawing technique has been developed, and a batch drawing type electron beam drawing technique has been developed in which a repeated pattern is prepared as a stencil as one block, and this is selectively drawn to perform high-speed drawing.

  FIG. 21 is a block diagram showing a typical example of an electron beam drawing apparatus using such a VSB drawing method.

  On the optical axis of the electron beam 2 emitted from the electron gun 1, as an electron optical system, an illumination lens 3, a first shaping aperture 4, a projection lens 5, a shaping deflector 6, a second shaping aperture 7, and a reduction A lens 8, an objective lens 9, a main deflector 10, a sub deflector 11, an electron detector 12, and the like are arranged.

  Among these, the first shaping aperture 4 is formed with a rectangular aperture 4a as shown in FIG. 22, for example, and the second shaping aperture 7 is a cell combining a rhombus and a rectangle as shown in FIG. A plurality of apertures 7b, 7c,... Of various shapes such as the aperture 7a are formed.

  With such a configuration, when drawing on the sample 13 such as a semiconductor wafer, the electron beam 2 emitted from the electron gun 1 and accelerated is adjusted to a uniform electron beam by the illumination lens 3, and the first By passing through this shaping aperture 4, it is shaped into a rectangle and projected onto the second shaping aperture 7 by the projection lens 5.

  At this time, the irradiation position of the electron beam on the second shaping aperture 7 is controlled by the shaping deflector 6 so as to have a beam pattern shape and its area according to, for example, CAD data.

  For example, as shown in FIG. 24, when a rectangular electron beam that has passed through the rectangular aperture 4a is deflected by the shaping deflector 6 and irradiated on one side of the rhomboid / rectangular cell aperture 7a, for example, a triangular electron beam 2a is obtained. Molded.

  The electron beam that has passed through the second shaping aperture 7 is reduced and projected onto the surface of the sample 13 by the reduction lens 8 and the objective lens 9, and the drawing position of the electron beam on the surface of the sample 13 at this time is the main deflector. 10 and the sub deflector 11.

  That is, the main deflector 10 controls the position of the drawing irradiation area in the drawing area with respect to the sample 13 while referring to the position of an XY stage (not shown), and the sub deflector 11 performs drawing in which the inside of the stripe is finely divided. The position is controlled for the range.

  A pattern is formed on the sample surface by continuously shooting the electron beam pattern controlled in this way. Further, alignment and adjustment of the electron beam are performed before pattern drawing.

  When the sample 13 is irradiated with an electron beam, secondary electrons and reflected electrons are generated from the sample 13.

  The electron detector 12 disposed below the objective lens 9 detects secondary electrons and reflected electrons and outputs a detection signal thereof.

Therefore, the detection signal output from the electron detector 12 is processed to detect the SEM image and control the beam adjustment.
Japanese Patent Laid-Open No. 08-298247 Japanese Patent Laid-Open No. 06-177023 Japanese Patent Laid-Open No. 05-251315 Japanese Patent Laid-Open No. 05-090144 JP 02-005353 A JP 59-083336 A Japanese Patent Laid-Open No. 04-352414 Japanese Patent Laid-Open No. 04-199613 Japanese Patent Laid-Open No. 09-162107

  The electron optical system of such an electron beam drawing apparatus comprises an illumination lens 3, a projection lens 5, a reduction lens 8, an objective lens 9, etc., which are electromagnetic lenses, and a shaping deflector 6, a main deflector 10, and a sub deflector. 11 is composed of electrostatic deflectors, and is constructed with the comprehensive optical system characteristics of these lenses and deflectors, the beam control method, and with sufficient consideration for the effects of mechanical assembly accuracy, contamination, etc. Have been forced.

  However, an electromagnetic lens is used in the electron optical system, and the deflector optically determined from the design is overlapped with or arranged in the vicinity of the electromagnetic lens. Therefore, the inner diameter of the electromagnetic lens is formed large, and the deflector is installed inside the electromagnetic lens. It has a complicated structure.

  In order to increase the beam resolution, the electron beam acceleration voltage is increased, and the electron beam accelerated to high acceleration is driven into, for example, a resist on the surface of the sample 13.

  On the other hand, since various multilayer thin films are formed on the lower surface of the resist on the sample 13, the electron beam passes through the resist, and a part of the electron beam is reflected by the multilayer thin film to become a scattered electron beam, which is again applied to the resist. The phenomenon of transmission and return occurs, and mutual interference of the beam irradiation amounts occurs due to the shot density variation state of the electron beam pattern.

  When such a phenomenon occurs, a blurred exposure by a scattered electron beam, that is, a so-called proximity effect occurs in the resist on which the pattern is drawn, so that the drawing pattern is blurred and the resolution is deteriorated.

  For this reason, in order to perform high-resolution pattern drawing, in addition to the original pattern drawing control, proximity effect correction control corresponding to the pattern shape is inevitably performed for the purpose of canceling the proximity effect correction.

  This necessitates a large-scale system in terms of electron optics and control means, which complicates the system, and this complication causes problems with the apparatus, resulting in a decrease in pattern drawing accuracy. .

  Furthermore, as functions that increase accuracy and throughput are incorporated, the system becomes increasingly larger.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam drawing method and apparatus capable of realizing downsizing and simplification of a system while keeping pattern drawing accuracy.

  In order to solve the problems and achieve the object, the electron beam writing method and apparatus of the present invention are configured as follows.

  An electron beam drawing apparatus according to an aspect of the present invention is an electron beam drawing apparatus including an electron optical system that is at least shaped or deflected with respect to an electron beam and then performs projection on a specimen in a reduced size. A plurality of apertures arranged at predetermined positions in order to adjust the electron beam to an arbitrary shape, an electrostatic illumination lens for adjusting the electron beam to an electron beam of an illumination beam, and a plurality of apertures A pattern image obtained by deflecting the electron beam adjusted by the electrostatic illumination lens in order to obtain an aperture image composed of a combination of patterns, controlling an irradiation position on the aperture, and passing through the aperture And at least two electrostatic shaping deflectors for returning the electron beam to the original optical axis, and the electrons that have passed through these electrostatic shaping deflectors An electrostatic reduction lens for reducing the image, an electrostatic objective lens for reducing and projecting the electron beam that has passed through the electrostatic reduction lens on the sample, and reduction projection on the sample by the objective lens A main deflection objective lens composed of an electrostatic main deflector for deflecting and drawing the electron beam on the sample, and an electrostatic system for deflecting the electron beam within a scanning region of the electrostatic main deflector A sub-deflector and an electron detector for detecting secondary electrons or reflected electrons generated when the electron beam is irradiated on the sample, and the main deflection objective lenses are arranged on the same circumference. A plurality of electrodes, and shield electrodes arranged opposite to each other with these electrodes interposed therebetween,
  Voltage control means for applying the same voltage to the plurality of electrodes to converge the electron beam and applying a voltage to the plurality of electrodes to deflect the electron beam to an arbitrary position on the sample; Aberration correction means for applying the same voltage to the plurality of electrodes of the main deflection objective lens, and adding or subtracting a correction amount corresponding to the aberration generated in the electron optical system to the plurality of electrodes, the plurality of apertures The aperture for cutting an unnecessary beam and the electrostatic reduction lens are arranged close to each other, and the thickness of the shield electrode having a larger inner diameter in the electrostatic reduction lens is set to be equal to that of the shield electrode having a smaller inner diameter. It is characterized by being formed at least twice the thickness.
  An electron beam lithography apparatus according to another aspect of the present invention is an electron beam lithography apparatus including an electron optical system that at least shapes and deflects an electron beam and then projects the reduced projection onto a sample. Each system is placed in place to adjust the electron beam to an arbitrary shape.
A plurality of apertures arranged, an electrostatic illumination lens that adjusts the electron beam to an electron beam of an illumination beam, and the electrostatic illumination to obtain an aperture image comprising a combination of patterns of the plurality of apertures The electron beam adjusted by the lens is deflected to control the irradiation position with respect to the aperture, and the electron beam of the pattern image obtained through the aperture is returned to the original optical axis. A shaping deflector, an electrostatic reduction lens that reduces the electron beam that has passed through these electrostatic shaping deflectors, and an electrostatic that reduces and projects the electron beam that has passed through the electrostatic reduction lens onto the sample Objective lens and an electrostatic main deflector that deflects and draws the electron beam projected onto the sample by the objective lens. A main deflection objective lens, an electrostatic sub-deflector that deflects the electron beam within a scanning region of the electrostatic main deflector, and secondary electrons generated when the sample is irradiated with the electron beam, or An electron detector for detecting reflected electrons, and the main deflection objective lens is composed of a plurality of electrodes arranged on the same circumference and shield electrodes arranged to face each other with these electrodes interposed therebetween.
  Voltage control means for applying the same voltage to the plurality of electrodes to converge the electron beam and applying a voltage to the plurality of electrodes to deflect the electron beam to an arbitrary position on the sample; Aberration correction means for applying the same voltage to the plurality of electrodes of the main deflection objective lens and applying a correction amount corresponding to the aberration generated in the electron optical system to the plurality of electrodes is provided. The shield electrode having a small inner diameter in the lens is disposed adjacent to or shared with the shield electrode of the electron detector, and the thickness of the shield electrode having the small inner diameter is at least twice the thickness of the shield electrode having the large inner diameter. It is characterized by that.

  As described above in detail, according to the present invention, it is possible to provide an electron beam drawing method and apparatus capable of realizing a reduction in size and simplification of the system while maintaining pattern drawing accuracy.

(1) A first embodiment of the present invention will be described below with reference to the drawings. In addition, the same code | symbol is attached | subjected to the same part as FIG.

  FIG. 1 is a configuration diagram of an electron beam drawing apparatus, and FIG. 2 is a diagram showing a cross-sectional structure of the apparatus.

  First, the overall arrangement will be described. On the optical axis of the electron beam 2 emitted from the electron gun 1, the first shaping aperture 4, the electrostatic illumination lens 20, 1 electrostatic shaping deflector 21, second shaping aperture 7, second electrostatic shaping deflector 22, third aperture 23, electrostatic reduction lens 24, electrostatic main deflection objective lens 25, and An electron detector 12 is arranged.

  Among these, the electrostatic main deflection objective lens 25 includes an electrostatic objective lens 26 and an electrostatic main deflector 27.

  Further, on the optical axis of the electron beam 2, an electrostatic sub-deflector 28, an electrostatic pre-main deflector 29, and an electrostatic pre-sub-deflector 30 are upstream of the electrostatic main deflection objective lens 25. Is arranged.

  Next, each component of the electron optical system will be described.

  Similarly to the above, for example, a rectangular or circular cell aperture 4a is formed in the first shaping aperture 4 as shown in FIG. 22, and a rhombus and a rectangle are given in the second shaping aperture 7 as shown in FIG. A plurality of cell apertures 7b, 7c,... Of various shapes, such as a cell aperture 7a in which are combined, are formed.

  The electrostatic illumination lens 20 adjusts the electron beam 2 emitted from the electron gun 1 into a uniform electron beam (illumination beam). The first illumination lens 20a and the second illumination lens 20b are placed on the optical axis. It has become arranged.

  Each of the first and second illumination lenses 20a and 20b is composed of an electrostatic lens. As shown in FIG. 3, each electrode is provided on both sides of an electrode (electrode) 20-1 to which a negative voltage is applied. 20-2 and 20-3 are arranged, and the electrodes 20-2 and 20-3 are both composed of an Einzel-type lens dropped to the ground (G).

  Among these, the crossover of the second illumination lens 20b is configured to form an image at the position of the third aperture 23, and the applied voltage to the first and second illumination lenses 20a and 20b is variably controlled. The magnification of the illumination beam can be arbitrarily selected, and the current density on the sample surface of the illumination beam is controlled.

  The first electrostatic shaping deflector 21 includes deflectors 21a and 21b, and deflects the electron beam formed by the electrostatic illumination lens 20 in order to obtain a desired aperture image on the surface of the sample 13. It has a function of controlling the irradiation position with respect to the second shaping aperture 7.

  The second electrostatic shaping deflector 22 includes deflectors 22a and 22b, and has a function of returning the electron beam of the aperture image obtained by passing through the second aperture shaping 7 to the original optical axis. is doing.

  As shown in FIG. 4, the first and second electrostatic shaping deflectors 21 and 22 are arranged with electrodes 32 and 33 on both sides of an octupole electrode 31, and both the electrodes 32 and 33 are grounded ( G), the voltages V1 to V8 are independently applied to each of the eight electrode electrodes 31 to control the deflection of the electron beam.

  In addition, when the first and second electrostatic shaping deflectors 21 and 22 are designed to have the same configuration and shape of the deflectors 21a, 21b, 22a, and 22b, for example, these four voltage interlocking ratios can be set, for example, , + Vi: -Vi: -Vi: + Vi or -Vi: + Vi: + Vi: -Vi can be controlled with a voltage having a linkage ratio, and can be controlled with different common control voltage polarities. Can be simplified.

  Further, as shown in FIG. 2, the first and second electrostatic shaping deflectors 21 and 22 are provided with shield electrodes 34, 35 and 36, and 37, 38 and 39, respectively. When these first and second electrostatic shaping deflectors 21 and 22 are arranged continuously and adjacent to each other, they are shielded by a shield so that the mutual electric field does not affect the deflection control. It has a structure.

  In particular, in the case of an electron optical system to which the low acceleration electron gun 1 is applied, the electron Coulomb repulsion phenomenon becomes remarkable at the crossover point of the electron beam 2, so that the length of the electron optical system can be designed as short as possible. Therefore, in the device of the present invention, as a countermeasure, as shown in FIG. 2, the shield electrodes 35 and 38 adjacent to each other are shared to prevent interference between adjacent deflectors, and the optical path length is shortened. I have to.

  The electrostatic reduction lens 24 reduces the electron beam that has passed through the first and second electrostatic shaping deflectors 21 and 22.

  A third aperture 23 is installed above the electrostatic reduction lens 24. The third aperture 23 is provided for cutting unnecessary beams scattered by the first and second shaping apertures 4, 7 and the like.

  Since the third aperture 23 is provided at a position close to the electrostatic reduction lens 24, the third aperture 23 has a structure joined to the electrostatic reduction lens 24 as shown in FIG.

  In this case, the thickness of the upper shield electrode 24a of the electrostatic reduction lens 24 is formed to be at least twice as thick as the thickness of the lower shield electrode 24b, whereby the shield electrodes having different inner diameters are made continuous. Thus, a stable optical system in which discontinuous beam trajectories are not generated is generated.

  As in the electrostatic shaping deflector shown in FIG. 4, the main deflection objective lens 25 is opposed to a plurality of quadruple multipolar electrodes arranged on the same circumference with these electrodes sandwiched therebetween. Each of the shield electrodes is dropped to the ground.

  The main deflection objective lens 25 operates with the functions of both the electrostatic objective lens 26 and the electrostatic main deflector 27 with one structure as described above. A voltage control unit 40 is connected to the electrostatic objective lens 26 and the electrostatic main deflector 27. The voltage control unit 40 performs voltage control on the electrostatic objective lens 26 and the electrostatic main deflector 27, so that the electrostatic objective lens 26 and the electrostatic main deflector 27 have the following functions. Have

  The electrostatic objective lens 26 projects the electron beam that has passed through the electrostatic reduction lens 24 on the sample 13 in a reduced scale, and converges the electron beam 2 when the same voltage is applied to the electrodes.

  The electrostatic main deflector 27 draws an electron beam, which is reduced and projected onto the sample 13 by the electrostatic objective lens 26, and draws it on the sample 13. The electrostatic main deflector 27 controls the electrode independently of the lens convergence voltage. The voltage is applied after being adjusted, and the electron beam is moved to an arbitrary position on the surface of the sample 13.

  A first aberration correction unit 41 is connected to the electrostatic objective lens 26 and the electrostatic main deflector 27.

  The aberration correction unit 41 is a control function that minimizes the aberration generated in the main deflection system by applying a correction amount corresponding to the aberration generated in the electron optical system to the main deflection objective lens 25 to the plurality of electrodes. have.

  The electrostatic sub deflector 28 has a function of minutely deflecting the electron beam within the scanning region of the electrostatic main deflector 27.

  The electrostatic pre-main deflector 29 is arranged on the upstream side of the electron beam with respect to the electrostatic main deflector 27, deflects the electron beam 2, and generates various lenses according to the beam polarization control on the surface of the sample 13. It has a function of controlling aberration and deflection aberration to a minimum.

  The electrostatic main deflector 27 and the electrostatic pre-main deflector 29 control the conditions for minimizing various lens aberrations and deflection aberrations generated in response to beam deflection on the surface of the sample 13 with a control interlock ratio of 1: 1. The axial length or inner diameter of the pre-main deflection center electrode is adjusted so as to satisfy the voltage condition.

  Further, shield electrodes 27a are provided at both ends of the electrostatic main deflector 27 and the electrostatic pre-main deflector 29 in order to eliminate the influence of adjacent deflectors.

  Thus, by providing the axial length or inner diameter of the pre-main deflection center electrode, and disposing shield electrodes on both ends of the electrostatic pre-main deflector 29 and the electrostatic pre-sub-deflector 30, The electrostatic pre-main deflector 29 and the electrostatic main deflector 27 can be controlled under the condition of the same voltage value.

  The electrostatic pre-sub-deflector 30 has a function of deflecting the electron beam 2 and minimizing various lens aberrations and sub-deflection aberrations generated according to the beam sub-deflection of the sample 13 surface.

  The electrostatic sub-deflector 28 and the electrostatic pre-sub-deflector 30 have the axial length or inner diameter of the pre-sub-deflector center electrode so that the control voltage condition with a control interlock ratio of 1: 1 is established. It has been adjusted.

  Further, shield electrodes 28a, 28b, 30a, and 30b are provided at both ends of the electrostatic sub-deflector 28 and the electrostatic pre-sub-deflector 30 in order to eliminate the influence of adjacent deflectors.

  By providing the axial length or inner diameter of the pre-sub-deflection center electrode in this way and arranging the shield electrodes on both ends of the electrostatic pre-sub-deflector 30 and the electrostatic pre-sub-deflector 30, The electrostatic pre-sub-deflector 30 and the electrostatic sub-deflector 28 can be controlled under the condition of the same voltage value.

  A second aberration correction unit 42 is connected to the electrostatic pre-main deflector 29 and the electrostatic pre-sub deflector 30.

  The second aberration correction unit 42 controls the control voltage of the electrostatic pre-main deflector 29 with respect to the electrostatic main deflector 27 in the addition direction as shown in FIG. 5, and the static aberration as shown in FIG. The control voltage of the electrostatic pre-sub-deflector 30 with respect to the electric sub-deflector 28 is controlled in the subtracting direction to minimize the total aberration.

  By the way, the electrostatic pre-sub-deflector 30, the electrostatic pre-main deflector 29, the electrostatic sub-deflector 28, and the electrostatic main deflector 27 are arranged along the traveling direction of the electron beam 2. Between the adjacent electrostatic pre-sub-deflector 30, electrostatic pre-main deflector 29, electrostatic sub-deflector 28 and electrostatic main deflector 27, the shield electrodes 30b ( 29a), 28a (29b), and 28b (27a) are arranged so as to be shared.

  By using each such shield electrode, mutual interference can be prevented, thereby shortening the entire length of the electron optical system and reducing lens aberration and deflection aberration.

  The electron detector 12 is disposed below the main deflection objective lens 25. The lower shield electrode 43 in the main deflection objective lens 25 has a structure shared as a shield electrode of the electron detector 12 as shown in FIG. In this case, the thickness of the lower shield electrode 43 is at least twice the thickness of the upper shield electrode 28b (27a).

  Next, the operation of the apparatus configured as described above will be described.

  The sample 13 is placed on the XY table 44.

  The electron beam 2 emitted from the electron gun 1 is applied to a first shaping aperture 4 having a rectangular or circular cell aperture, and passes through the first shaping aperture 4.

  The electronic illumination lens 20 is sufficiently larger than the target cell aperture in the second shaping aperture 7 with respect to the electron beam 2 that has passed through the first shaping aperture 4 and does not interfere with an adjacent cell aperture. Expand to a large beam diameter.

  At this time, the second illumination lens 20 b forms an image of the electron beam 2 at the position of the third shaping aperture 23. Further, the applied voltage of the first and second illumination lenses 20a and 20b is variably controlled, so that the magnification of the electron beam (in this case, the illumination beam) 2 is arbitrarily selected, and the current on the sample surface of the electron beam 2 The density is controlled.

  The first electrostatic shaping deflector 21 combines the cell apertures of the first shaping aperture 4 and the second shaping aperture 7 to obtain a desired aperture image from the electrostatic illumination lens 20. The electron beam 2 is deflected, and the irradiation position is controlled so as to select a target cell aperture among the cell apertures formed in the second shaping aperture 7.

  The second electrostatic shaping deflector 22 swings back the electron beam 2 of the aperture image obtained by passing through the second aperture shaping 7 onto the original optical axis.

  The electrostatic reduction lens 24 reduces the electron beam 2 that has passed through the first and second electrostatic shaping deflectors 21 and 22. That is, the electron beam 2 that has passed through the first electrostatic shaping deflector 21, the second shaping aperture 7, and the second electrostatic shaping deflector 22 has a cell pattern starting from the second shaping aperture 7. It starts as a beam and passes through the electronic reduction lens 24 in a state of being turned back on the optical axis of the electron optical system.

  The electrostatic objective lens 26 of the main deflection objective lens 25 reduces and projects the electron beam that has passed through the electrostatic reduction lens 24 onto the sample 13, and the electrostatic main deflector 27 together with the electrostatic deflection lens 24 is an electrostatic type. The electron beam 2 reduced and projected onto the sample 13 by the objective lens 26 is deflected on the sample 13 and drawn.

  At this time, the electrostatic main deflector 27 and the electrostatic sub deflector 28 control the beam position with respect to the drawing pattern position. That is, the electrostatic main deflector 27 refers to the sample 13 mounted on the XY table 44 within the scanning area of the electrostatic main deflector 27 while referring to the position of the XY table 44 for the position of the drawing area. The electron beam is deflected minutely, and the electrostatic sub deflector 28 performs position control on the finely divided drawing range.

  Further, the electrostatic pre-main deflector 29 deflects the electron beam, controls various lens aberrations and deflection aberrations generated on the surface of the sample 13 according to the beam polarization control, and minimizes the electrostatic pre-sub deflector 30. Deflects the electron beam 2 and controls various lens aberrations and sub-deflection aberrations generated according to the beam sub-deflection of the surface of the sample 13 to the minimum.

  The first aberration correction unit 41 applies the same voltage to the plurality of electrodes of the main deflection objective lens 25 to converge the electron beam 2, whereas the aberration generated in the electron optical system depends on the main deflection amount. A correction amount obtained in advance is applied to a plurality of electrodes, and the control voltage of the electrostatic pre-main deflector 29 with respect to the electrostatic main deflector 27 is controlled in the addition direction as shown in FIG. Minimize aberrations that occur.

  As shown in FIG. 6, the second aberration correction unit 42 controls the control voltage of the electrostatic pre-sub-deflector 30 with respect to the electrostatic sub-deflector 28 in the subtraction direction, thereby minimizing the total aberration.

  In this way, the electron beam 2 formed in a desired aperture image irradiates the sample 13 to form a pattern.

  Note that the drawing job and the adjustment job are performed separately.

  The electron detector 12 detects secondary electrons and reflected electrons generated from the sample 13 and outputs a detection signal thereof.

  Therefore, the detection signal output from the electron detector 12 is processed to detect the SEM image and control the beam adjustment.

  Here, a relatively high control voltage is applied to the electron detector 12, and the electron detector 12 is disposed close to the main deflection objective lens 25 in order to reduce spherical aberration. Thus, as described above, the lower shield electrode 43 in the main deflection objective lens 25 is shared as the shield electrode of the electron detector 12 as shown in FIG. 7, and the thickness of the lower shield electrode 43 is set to the upper shield electrode 28b. It is formed at least twice the thickness of (27a).

  This is because, when a shield electrode having a small inner diameter is arranged without considering the thickness in the Z direction, which is the optical axis direction of the electron optical system, an electric field offset field Δf is generated as shown in FIG. It prevents it from occurring.

  As described above, in the first embodiment, each component in the electron optical system is configured by the electrostatic lens or the electrostatic deflector. Therefore, the shield used for the electrostatic lens or the electrostatic deflector. Since the electrode can be shared between adjacent electrostatic lenses and electrostatic deflectors, the entire length of the electron optical system can be reduced, and a very small electron beam drawing apparatus can be realized.

  Moreover, by comprising an electrostatic lens or an electrostatic deflector, it becomes most suitable for an electron beam drawing apparatus for the low acceleration electron beam 2 and there is no influence of the proximity effect on the surface of the sample 13, Correction control for complicated proximity effects is not necessary.

  Furthermore, the system can be greatly simplified with respect to the electron optical system and the control surface, so that troubles in the drawing apparatus are reduced and the production site can be sufficiently handled.

  As a result, even for high-throughput processing, which is the greatest weakness of electron beam lithography equipment, it is possible to achieve compactness and simplification of the system while maintaining drawing accuracy, and to build a parallel control system with several electron optical systems. Therefore, a high-throughput electron beam drawing apparatus can be constructed.

(2) Next, a second embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 9 is a block diagram of the electron beam drawing apparatus.

  An electromagnetic objective lens 50 is provided on the optical axis of the electron optical system. The electromagnetic objective lens 50 has a columnar shape, and includes a pole piece 51 having an opening (gap) formed inside thereof, and a coil 52 wound around the pole piece 51.

  An electrostatic main deflector 53 is built in the gap of the pole piece 51 of the electromagnetic objective lens 50. That is, the electrostatic main deflector 53 is disposed in the magnetic field of the electromagnetic objective lens 50.

  Since the electrostatic main deflector 53 is built in the gap of the pole piece 51 of the electromagnetic objective lens 50 in this way, the lens function by the electromagnetic objective lens 50 and the electron beam 2 by the electrostatic main deflector 53 are reduced. The deflection function is controlled independently of each other.

  Further, a non-magnetic shield 54 is attached to the tip of the pole piece 51 so that the leakage electric field generated by the electrostatic main deflector 53 does not affect others.

  The control wiring to the electrostatic main deflector 53 is performed by providing a through hole 55 in the pole piece 51 and pulling out the wiring from the through hole 55 as shown in FIG.

  The pole piece 51 may be provided with an auxiliary coil 56 to adjust the magnetic field generated by the electromagnetic objective lens 50.

  The electrostatic main deflector 53 deflects the electron beam 2 projected onto the sample 13 by the electromagnetic objective lens 50 and draws it on the sample 13, and independently controls the electrode separately from the lens convergence voltage. The voltage is applied after being adjusted, and the electron beam is moved to an arbitrary position on the surface of the sample 13.

  Here, the electrostatic pre-sub-deflector 30, the electrostatic pre-main deflector 29, the electrostatic sub-deflector 28, and the electrostatic main deflector 53 are arranged along the traveling direction of the electron beam 2. Between the adjacent electrostatic pre-main deflector 29, electrostatic sub-deflector 28 and electrostatic main deflector 53, the shield electrodes 30b (29a), 28a (29b), 54 are arranged so as to be shared.

  With such a structure sharing each shield electrode, the entire length of the electron optical system is shortened, and lens aberration and deflection aberration are reduced.

  Next, the operation of the apparatus configured as described above will be described.

  The electron beam 2 emitted from the electron gun 1 is applied to a first shaping aperture 4 having a rectangular or circular cell aperture.

  The electrostatic illumination lens 20 is sufficiently larger than the target cell aperture in the second shaping aperture 7 with respect to the electron beam 2 that has passed through the first shaping aperture 4 and interferes with an adjacent cell aperture. Enlarge to a beam diameter that does not.

  At this time, the second illumination lens 20 b forms an image of the electron beam 2 at the position of the third aperture 23. Further, the applied voltage of the first and second illumination lenses 20a and 20b is variably controlled, so that the magnification of the electron beam 2 is arbitrarily selected and the current density on the sample surface is controlled.

  The first electrostatic shaping deflector 21 combines the cell apertures of the first shaping aperture 4 and the second shaping aperture 7 to obtain a desired aperture image from the electrostatic illumination lens 20. The electron beam 2 is deflected, and the irradiation position is controlled so as to select a target cell aperture among the cell apertures formed in the second shaping aperture 7.

  The second electrostatic shaping deflector 22 swings back the electron beam 2 of the aperture image obtained by passing through the second aperture shaping 7 onto the original optical axis.

  The electron beam 2 that has passed from the first electrostatic shaping deflector 21 through the second shaping aperture 7 and the second electrostatic shaping deflector 22 is used as a cell pattern beam starting from the second shaping aperture 7. It starts and passes through the electrostatic reduction lens 24 while being turned back on the optical axis of the electron optical system. The electron beam 2 that has passed through the electrostatic reduction lens 24 is reduced.

  The electromagnetic objective lens 50 reduces and projects the electron beam that has passed through the electrostatic reduction lens 24 onto the sample 13, and the electrostatic main deflector 53 is reduced onto the sample 13 by the electromagnetic objective lens 50. The projected electron beam 2 is deflected and drawn on the sample 13.

  At this time, the electrostatic main deflector 53 is within the scanning area of the electrostatic main deflector 53 while referring to the position of the drawing area with respect to the sample 13 mounted on the XY table 44 while referring to the position of the XY table 44. Micro-deflects the electron beam.

  At the same time, the electrostatic sub deflector 28 performs position control on the finely divided drawing range.

  Further, the electrostatic pre-main deflector 29 deflects the electron beam, controls various lens aberrations and deflection aberrations generated on the surface of the sample 13 according to the beam polarization control, and minimizes the electrostatic pre-sub deflector 30. Deflects the electron beam 2 and controls various lens aberrations and sub-deflection aberrations generated according to the beam sub-deflection of the surface of the sample 13 to the minimum.

  The pattern is formed by irradiating the sample 13 with the electron beam 2 formed in the desired aperture image in this way.

  The electron detector 12 detects secondary electrons and reflected electrons generated from the sample 13 and outputs a detection signal thereof. By processing the detection signal output from the electron detector 12, detection of an SEM image and control of beam adjustment are performed.

  As described above, in the second embodiment, each component in the electron optical system is configured by the electrostatic lens, the electrostatic deflector, and the electromagnetic objective lens. Therefore, the same as in the first embodiment. In addition, the overall length of the electron optical system can be shortened by sharing the shield electrode used for these electrostatic lenses and electrostatic deflectors with adjacent electrostatic lenses and electrostatic deflectors. A very small electron beam writing apparatus can be realized.

  Further, since the electrostatic main deflector 53 is built in the gap of the pole piece 51 of the electromagnetic objective lens 50, the lens function by the electromagnetic objective lens 50 and the deflection of the electron beam 2 by the electrostatic main deflector 53 are provided. Functions can be controlled independently.

  Further, since the nonmagnetic shield 54 is attached to the tip of the pole piece 51, the leakage electric field generated from the electrostatic main deflector 53 can be absorbed, and the leakage electric field affects the adjacent deflector. There is no.

  Further, since the wiring to the electrostatic main deflector 53 is drawn out by providing the pole piece 51 with the through hole 55, complicated wiring can be simplified.

  Moreover, by comprising an electrostatic lens or an electrostatic deflector, it becomes most suitable for an electron beam drawing apparatus for the low acceleration electron beam 2 and there is no influence of the proximity effect on the surface of the sample 13, Correction control for complicated proximity effects is not necessary.

  Furthermore, the system can be greatly simplified with respect to the electron optical system and the control surface, so that troubles in the drawing apparatus are reduced and the production site can be sufficiently handled.

  As a result, even for high-throughput processing, which is the greatest weakness of electron beam lithography equipment, it is possible to achieve compactness and simplification of the system while maintaining drawing accuracy, and to build a parallel control system with several electron optical systems. Therefore, a high-throughput electron beam drawing apparatus can be constructed.

  FIG. 11 is a block diagram showing a third embodiment of the electron beam drawing apparatus according to the present invention. In FIG. 11, the same functional parts as those in FIG. 2 described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the electron beam drawing apparatus, four sets of alignment mechanisms 60 to 90 for aligning the optical axis of the electron beam at the center position of the lens and the aperture are provided. Note that an example of optical axis alignment is shown on the left side of FIG. 11, and the alternate long and short dash line C indicates the center position. On the other hand, a second shaping aperture 100 is arranged instead of the second shaping aperture 7, and a third shaping aperture 101 is arranged instead of the third shaping aperture 23.

  The alignment mechanism 60 is provided between the first illumination lens 20a and the second illumination lens 20b. The alignment mechanism 70 is provided on the outer peripheral side of the first electrostatic shaping deflector 21. The alignment mechanism 80 is provided on the outer peripheral side of the second electrostatic shaping deflector 22. The alignment mechanism 90 is provided on the outer peripheral side of the electrostatic sub-deflector 28, the electrostatic pre-main deflector 29, and the electrostatic pre-sub-deflector 30.

  The alignment mechanism 60 includes an alignment unit 61 that performs shift control, an alignment unit 62 that performs tilt control, and a shield member 63 made of a magnetic material that is disposed between the alignment units 61 and 62. Yes. The alignment units 61 and 62 are constituted by saddle type alignment coils 61a and 62a, respectively.

  The alignment mechanism 70 includes an alignment unit 71 that performs shift control and an alignment unit 72 that performs tilt control. The shield electrodes 34 to 36 also serve as a shield member between the alignment portions 71 and 72. The alignment units 71 and 72 are constituted by saddle type alignment coils 71a and 72a, respectively.

  The alignment mechanism 80 includes an alignment unit 81 that performs shift control and an alignment unit 82 that performs tilt control. The shield electrodes 37 to 39 also serve as a shield member between the alignment portions 81 and 82. The alignment units 81 and 82 are constituted by saddle type alignment coils 81a and 82a, respectively.

  The alignment mechanism 90 includes an alignment unit 91 that performs shift control and an alignment unit 92 that performs tilt control. The shield electrodes 27a, 28a, 28b, 29a, 29b, 30a, and 30b have a configuration that also serves as a shield member between the alignment portions 91 and 92. The alignment units 91 and 92 are configured by saddle type alignment coils 91a and 92a, respectively.

  The 2nd shaping | molding aperture 100 and the 3rd shaping | molding aperture 101 are electrically insulated and arrange | positioned from other members. These second and third shaping apertures 100 and 101 have a current detection function for detecting a current generated by irradiation with an electron beam, and are connected to a monitor or the like (not shown) to display an image of the aperture hole as a monitor image. Is displayed, and the alignment coil is adjusted.

  In the electron beam drawing apparatus configured as described above, drawing with an electron beam is performed in the same manner as the electron beam drawing apparatus in the first embodiment described above. Before drawing, the alignment mechanisms 60 to 90 perform shift control and tilt control to align the optical axes at the center positions of the lenses 24 and 26 and the shaping apertures 100 and 101.

  12A and 12B are diagrams for explaining the alignment mechanism 70 among the alignment mechanisms 60 to 90. FIG. That is, as shown in FIG. 12A, the electron beam 2 is shift-controlled by the alignment unit 71 and then tilt-controlled by the alignment unit 72. Then, the light enters the electrostatic reduction lens 24. The magnetic flux density curve acting on the electron beam 2 at this time is as shown in FIG. That is, since the magnetic field becomes zero magnetic field at the positions of the shield electrodes (shield members) 35 to 37, interference between the alignment units 71 and 72 is eliminated, and independent control is possible.

  On the other hand, (a) and (b) of FIG. 13 are diagrams for comparison. That is, as shown in FIG. 13A, when there is no shield member, the alignment unit 71 and the alignment unit 72 interfere with each other as shown in FIG. May occur. For this reason, if the shift amount control by the alignment unit 71 and the tilt amount control by the alignment unit 72 are performed, the mutual control is affected, and it becomes difficult to make the light accurately enter the center of the lens 24.

  FIGS. 14 to 17 are diagrams showing a comparison of cases where saddle type coils and toroidal type coils are used as alignment coils in the alignment units of the alignment mechanisms 60 to 90, respectively. 14 and 16 show a saddle type coil, and FIGS. 15 and 17 show a toroidal type coil.

  In the saddle type coil, as shown in FIG. 14A, the coil is wound around the core 110 in the direction shown in the winding 111. Therefore, the equipotential magnetic field lines are as indicated by M in FIG. 14B and FIG. 16A, and the electromagnetic force is generated as indicated by L in FIG. 14B.

  At this time, when the shield member 112 is arranged as shown in FIG. 16B, the equipotential magnetic field lines M are blocked by the shield member 112, and the magnetic field strength becomes zero.

  On the other hand, in the toroidal type coil, as shown in FIG. 15A, the winding 114 is wound around the core 113 in the direction shown in the drawing. Therefore, the electromagnetic force is generated as indicated by Q in FIG. 15B, and the equipotential magnetic field lines are as indicated by R in FIG. 15B and FIG. 17A.

  At this time, even if the shield member 112 is disposed as shown in FIG. 17B, a phenomenon occurs in which the equipotential lines of magnetic force are swept over the shield member 112 due to the flow of the equipotential lines of magnetic force. . Therefore, as an alignment part provided with a shield member, a saddle type coil can prevent mutual interference more effectively than a toroidal type coil.

  FIG. 18A is a diagram illustrating an alignment coil adjustment method by the second aperture 100. That is, the second aperture 100 replaces the electron beam 2 irradiated on its surface with a current signal and displays it on the monitor. Then, a predetermined aperture area on the second aperture 100 is scanned with the electron beam 2 by the alignment mechanisms 60 and 70 using an electric processing system. At this time, when the aperture hole 100a is scanned, a monitor image of the aperture hole 100a is obtained. When the scan area is changed, the position of the aperture hole 100a moves, so that the aperture image is moved to the center on the monitor. An electron beam with respect to the aperture center is adjusted by adjusting the alignment coil so that the center position of the monitor image does not change even when a voltage is applied to the lens 20 by adjusting the aperture hole 100a at an appropriate position. The two optical axes can be aligned.

  FIG. 18B is a diagram showing a method for adjusting the alignment coil by the third aperture 101. That is, the third aperture 101 replaces the electron beam 2 irradiated on the surface with a current signal and displays it on the monitor. Then, the alignment mechanism 80 is scanned with the electron beam 2 in a state where a predetermined aperture area on the third aperture 101 is narrowed by an electric processing system. At this time, when the aperture hole 101a is scanned, a monitor image of the aperture hole 101a is obtained. When the scan area is changed, the position of the aperture hole 101a moves, so that the aperture image is moved to the center on the monitor. By adjusting the alignment coil so that the image of the aperture hole 101a is positioned at an appropriate position, the optical axis of the electron beam 2 with respect to the aperture center can be adjusted.

  As described above, according to the electron beam lithography apparatus according to the third embodiment, the same effect as that of the electron beam lithography apparatus according to the first embodiment can be obtained, and mutual interference between adjacent alignment units can be reduced. By preventing this, the optical axis alignment of the electron beam by the alignment mechanisms 60 to 90 can be performed easily and with high accuracy.

  Further, by using the second and third forming apertures 100 and 101, the alignment mechanisms 60 to 80 can be easily adjusted.

  Furthermore, since the shield member in the alignment mechanisms 70 to 90 is not provided independently of the optical system but also serves as a shield pole of the optical system, it is not necessary to newly provide a component as a shield member. The parts can be omitted and the whole can be miniaturized.

  FIG. 19 is a block diagram showing a fourth embodiment of the electron beam drawing apparatus according to the present invention. In FIG. 19, the same functional parts as those in FIG. 11 are denoted by the same reference numerals, and detailed description thereof is omitted. The electron beam drawing apparatus is different from the electron beam drawing apparatus according to the third embodiment described above in that alignment mechanisms 110 to 130 are used instead of the alignment mechanisms 60 to 80. In these alignment mechanisms 110 to 130, one alignment unit 111, 121, 131 is provided. In this case, if the lens is disposed away from the target lens or the target aperture, a large alignment power can be obtained with a small alignment coil current, which is advantageous in terms of space efficiency.

  FIG. 20 is a block diagram showing a fifth embodiment of an electron beam drawing apparatus according to the present invention. In FIG. 20, the same functional parts as those in FIG. 11 are denoted by the same reference numerals, and detailed description thereof is omitted. The electron beam drawing apparatus is different from the electron beam drawing apparatus according to the third embodiment described above in the case where the electromagnetic lens 50 is used instead of the objective lens 26.

  According to the present embodiment, it is possible to obtain the same effects as those of the electron beam drawing apparatuses according to the second and third embodiments.

FIG. 21 is a block diagram showing a sixth embodiment of the electron beam drawing apparatus according to the present invention. In FIG. 21, the same functional parts as those in FIG. 2 described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  The difference between the electron beam drawing apparatus according to the sixth embodiment and the electron beam drawing apparatus according to the first embodiment described above is that the electrostatic reduction lens 140 is used instead of the electrostatic reduction lens 24. And an electrostatic objective lens 141 is provided in place of the electrostatic objective lens 26.

  The electrostatic reduction lens 140 includes a negative electrode (first electrode) 140a to which a negative voltage is applied, an upper shield electrode 140b provided on the upstream side of the negative electrode 140a, and a downstream side of the negative electrode 140a. A provided lower shield electrode 140c and a space charge effect reducing electrode (second electrode) 140d provided between the lower shield electrode 140c and the negative electrode 140a are provided. A predetermined positive voltage is applied to the space charge effect reducing electrode 140d.

  The electrostatic objective lens 141 includes a negative electrode (first electrode) 141a to which a negative voltage is applied, an upper shield electrode 141b provided on the upstream side of the negative electrode 141a, and a downstream side of the negative electrode 141a. A provided lower shield electrode 141c and a space charge effect reducing electrode (second electrode) 141d provided between the lower shield electrode 141c and the negative electrode 140a are provided. A predetermined positive voltage is applied to the space charge effect reducing electrode 141d.

  Next, the operation of the space charge effect reducing electrodes 140d and 141d will be described. In an optical system using an electrostatic lens, unlike an electromagnetic lens using a magnetic field, an electron beam fulfills a lens function through deceleration and acceleration operations in the electrostatic lens. In an optical system using an electron beam, the space charge effect increases as the acceleration voltage decreases, the optical aberration increases, and the beam blur increases.

  FIGS. 22A and 22B and FIGS. 23A to 23C schematically show the principle of beam blur that occurs from the second shaping aperture 7 until it is projected onto the surface of the sample 13. FIG. That is, α in (b) in FIG. 22 indicates a beam. This beam α includes a beam β (optical aberration) generated by an opening angle beam from the second shaping aperture 7. The difference between the beam α and the beam β indicates beam blur caused by the space charge effect in the electrostatic lens.

  Therefore, in order to reduce the beam blur amount on the surface of the sample 13, it is necessary to reduce the beam blur β and the beam blur due to the space charge effect as much as possible. That is, the space charge effect can be reduced by applying a voltage opposite to that of the negative electrodes 140a and 141a to the space charge effect reducing electrodes 140d and 141d.

  FIG. 24 shows the lens effect of the objective lens 141 as a lens potential Ve. In FIG. 24, a solid line γ1 indicates a case where no voltage is applied to the space charge effect electrode 141d, a broken line γ2 indicates a positive voltage with respect to the voltage applied to the negative electrode 141a, and an absolute value thereof is 0.7 times, Shows a case where the voltage applied to the negative electrode 141a is a positive voltage and its absolute value is 1.2 times.

  In the case of γ2 and γ3 described above, as indicated by a broken line δ in FIG. 22B, the space charge effect can be reduced. Note that when the voltage applied to the negative electrode 141a is a positive voltage and its absolute value is 0.5 to 1 times, the lens potential Ve does not become positive, which is the optimum range. Moreover, if it is the range of 0.2 to 1.2 times, the reduction effect with respect to the space charge effect can fully be confirmed.

  As described above, in the electron beam drawing apparatus using the electrostatic lens, by providing the space charge effect reducing electrodes 140d and 141d, the space charge effect generated by the deceleration operation in the electrostatic lens is suppressed to be small, and the blur is small. An electron beam with excellent resolution can be obtained.

  The space charge effect reducing electrode may be provided on either the upstream side or the downstream side of the electron beam 2 with respect to the negative electrode, but the downstream side is more effective. Further, only the electrostatic objective lens 141 side may be provided.

  FIG. 25 is a block diagram showing a seventh embodiment of the electron beam drawing apparatus according to the present invention. In FIG. 25, the same functional parts as those in FIG.

  The electron beam drawing apparatus according to the seventh embodiment has a control unit 150 in addition to the electron beam drawing apparatus according to the first embodiment. The control unit 150 includes a drawing control unit 151 that determines a drawing pattern, a CP selection control unit 152 that selects an appropriate cell on the second shaping aperture 7 based on a signal from the drawing control unit 151, and the CP control. A shaping deflection AMP 153 for controlling the first electrostatic shaping deflector 21 and the second electrostatic shaping deflector 22 based on a signal from the unit 152, and each cell based on a signal from the shaping deflection AMP 153 An illumination lens excitation table 154 that stores the illumination magnification corresponding to the position, an excitation control unit 155 that controls the electrostatic illumination lens 20 based on the magnification determined by the illumination lens excitation table 154, and this excitation control unit 155 The lens AMP 156 for amplifying the signal from the lens and driving the electrostatic illumination lens 20 is provided.

  FIG. 26 and FIG. 27 are explanatory views showing the principle that the difference in the electron optical path length generated in the electron beam drawing apparatus is generated depending on the position of the cell on the second shaping aperture 7, thereby causing the difference in the reduction ratio. .

  As shown in FIG. 26, when a cell on the second shaping aperture 7 is selected according to the pattern to be drawn, a cell 160 located on the center position C of the electron gun 1 and τ1 from the center position C The separated cell 161 has a different electron optical path length until it returns to the center position C. That is, K1 for the cell 160 and K2 for the cell 161. Therefore, the illumination optical path κ2 of the cell 161 that illuminates the second shaping aperture 7 has a crossover χ upward in FIG. 27 by τ2 compared to the crossover χ formed by the illumination optical path κ1 when the cell 160 is illuminated. ′ Is formed. The reduction rate of the cell pattern image in which the pattern image is formed on the sample 13 by the electrostatic reduction lens 24 is slightly larger than that when the cell 160 is selected.

  Due to this variation, the pattern line width in the fine wiring exposure formed on the sample 13 becomes a non-negligible size, and there is a possibility that the connecting accuracy between patterns is lowered and the yield is lowered.

  In the electron beam drawing apparatus shown in FIG. 25, in addition to the operation of the electron beam drawing apparatus according to the first embodiment described above, the illumination optical path generated by the distance τ1 from the center position C of the cell 161 is optically generated by τ2. In order to cancel the difference and make the reduction ratio the same, the following control is performed. That is, a drawing command for drawing a target pattern is sent from the drawing control unit 151 to the CP selection control unit 152. As the excitation condition of the illumination lens 20, the illumination magnification is changed to an appropriate value based on the illumination lens excitation table 154. As a result, the electron beam 2 reaches the second shaping aperture 7 through the corrected optical path κ3 corrected as shown in FIG. The electron beam 2 shaped by the cell 161 passes through the same optical path as that of the cell 160 and forms a pattern image on the sample 13.

  As described above, in the electron beam drawing apparatus according to the seventh embodiment, the same effect as that of the electron beam drawing apparatus according to the first embodiment described above can be obtained, and the position of the cell is the center position C. Even if it is away from the cell pattern image of the cell on the surface of the sample 13 with the same reduction ratio without changing the operating conditions of the projection lens (electrostatic reduction lens 24 and electrostatic objective lens 25). Can be imaged. Moreover, since the illumination magnification of the illumination lens 20 can be changed at high speed following the optional selection of the cell, drawing can be performed at high speed.

  FIG. 29 is a block diagram showing an electron beam drawing apparatus according to the eighth embodiment of the present invention. 29, the same functional parts as those in FIG. 25 described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  The electron beam drawing apparatus according to the eighth embodiment includes a control unit 170 in addition to the electron beam drawing apparatus according to the first embodiment. The control unit 170 includes a drawing control unit 171 that determines a drawing pattern, a CP selection control unit 172 that selects an appropriate cell on the shaping aperture 7 based on a signal from the drawing control unit 171, and a CP control unit 172. And the electrostatic deflection lens 24 based on the signal from the CP 172, and the shaping deflection AMP 173 for controlling the first electrostatic shaping deflector 21 and the second electrostatic shaping deflector 22. RL lens excitation table 174 for controlling the reduction magnification of the RL, excitation controller 175 for controlling the electrostatic reduction lens 24 based on the magnification determined by the RL lens excitation table 174, and a signal from the excitation controller 175 And an RL lens AMP 176 for driving the electrostatic reduction lens 24.

  In the electron beam drawing apparatus shown in FIG. 29, the following control is performed in order to cancel the difference in τ2 optically generated by the illumination optical path caused by the distance τ1 from the center position C of the cell 161 and to make the reduction ratio the same. I do. That is, the drawing control unit 171 sends a drawing command for a target pattern to the CP selection control unit 172 to select a cell. The CP selection control unit 172 controls the electrostatic shaping deflectors 21 and 22 via the shaping deflection AMP 173 so that the desired cell is irradiated with the electron beam 2. Note that the cells are formed in advance by adjusting the size according to the reduction ratio.

  On the other hand, in the RL lens excitation table 174, the reduction ratio of the electrostatic reduction lens 24 corresponding to the selected cell is set. The electrostatic reduction lens 24 is controlled by the excitation controller 175 in accordance with the reduction ratio, and the electrostatic reduction lens 24 is driven via the RL lens AMP 176.

  As a result, the electron beam 2 forms a pattern image on the sample 13 through the corrected illumination optical path κ4.

  Thus, in the electron beam drawing apparatus according to the eighth embodiment, the same effects as those of the electron beam drawing apparatus according to the first embodiment described above can be obtained, and the position of the cell is the center position C. Even if it is away from, the cell pattern image can be formed on the surface of the sample 13 with an appropriate size without changing the operating condition of the electrostatic illumination lens 20. Further, the reduction of the reduction ratio by the electrostatic reduction lens 24 can be performed at high speed following the optional selection of cells, so that drawing can be performed at high speed.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The block diagram which shows 1st Embodiment of the electron beam drawing apparatus concerning this invention. The figure which shows the external appearance structure of the apparatus. The block diagram of the electrostatic lens in the apparatus. The block diagram of the electrostatic shaping | molding deflector in the apparatus. The figure which shows the addition direction of the control voltage of an electrostatic pre main deflector with respect to an electrostatic main deflector. The figure which shows the subtraction direction of the control voltage of an electrostatic pre sub deflector with respect to an electrostatic sub deflector. The figure which shows the shared structure of the lower shield electrode of the main deflection objective lens, and the shield electrode of an electron detector. The figure for demonstrating an effect | action when the lower shield electrode of a main deflection objective lens is shared as a shield electrode of an electron detector. The block diagram which shows 2nd Embodiment of the electron beam drawing apparatus concerning this invention. The figure which shows the control wiring to the electrostatic main deflector incorporated in an electromagnetic objective lens. The block diagram which shows 3rd Embodiment of the electron beam drawing apparatus concerning this invention. Explanatory drawing which shows the function of the shield member in the apparatus. Explanatory drawing which shows the alignment part without a shield member. Explanatory drawing which shows the saddle type coil integrated in the apparatus. Explanatory drawing which shows a toroidal type coil. Explanatory drawing which shows the function of the shield in a saddle type alignment coil. Explanatory drawing which shows the function of the shield in a toroidal type alignment coil. Explanatory drawing which shows the optical axis alignment function in the apparatus. The block diagram which shows 4th Embodiment of the electron beam drawing apparatus concerning this invention. The block diagram which shows 5th Embodiment of the electron beam drawing apparatus concerning this invention. The block diagram which shows 6th Embodiment of the electron beam drawing apparatus concerning this invention. Explanatory drawing which shows the effect | action of the blur of an electron beam. Explanatory drawing which shows the function of the space charge effect reduction electrode integrated in the electron beam drawing apparatus. Explanatory drawing which shows the effect of correction by the same space charge effect reduction electrode. The block diagram which shows 7th Embodiment of the electron beam drawing apparatus concerning this invention. Explanatory drawing which shows the difference in the optical path based on the difference in the position of the cell of the shaping aperture incorporated in the electron beam drawing apparatus. Explanatory drawing which shows the fluctuation | variation of the drawing based on the difference of the same optical path. Explanatory drawing which shows the principle which corrects the fluctuation | variation of the drawing based on the difference of the same optical path. The block diagram which shows 8th Embodiment of the electron beam drawing apparatus concerning this invention. Explanatory drawing which shows the principle which corrects the fluctuation | variation of drawing of the electron beam drawing apparatus. The block diagram of the conventional electron beam drawing apparatus. The block diagram of the 1st shaping | molding aperture formed in the rectangle. The block diagram of the 2nd shaping | molding aperture formed in the rhombus and the rectangle. The schematic diagram which shows the shaping | molding effect | action of the electron beam by the 1st and 2nd shaping | molding aperture.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Electron gun, 4 ... 1st shaping | molding aperture, 7 ... 2nd shaping | molding aperture, 12 ... Electron detector, 20 ... Electrostatic illumination lens, 21 ... 1st electrostatic shaping deflector, 22 ... 1st 2 electrostatic shaping deflectors, 23 ... third shaping aperture, 24 ... electrostatic reduction lens, 25 ... electrostatic main deflection objective lens, 27 ... electrostatic objective lens, 27 ... electrostatic main deflection 28 ... electrostatic sub-deflector 29 ... electrostatic pre-main deflector 30 ... electrostatic pre-sub-deflector 40 ... voltage control unit 41 ... first aberration correction unit 42 ... second 50 ... electromagnetic objective lens, 51 ... pole piece, 52 ... coil, 53 ... electrostatic main deflector, 54 ... non-magnetic shield, 60, 70, 80, 90, 120, 130 ... alignment mechanism .

Claims (7)

In an electron beam drawing apparatus equipped with an electron optical system that at least shapes and deflects an electron beam and then projects it on a specimen in a reduced size,
The electron optical system includes a plurality of apertures arranged at predetermined positions in order to adjust the electron beam into an arbitrary shape,
An electrostatic illumination lens for adjusting the electron beam to an electron beam of an illumination beam;
The electron beam adjusted by the electrostatic illumination lens is deflected in order to obtain an aperture image composed of a combination of patterns of the plurality of apertures to control an irradiation position on the aperture, and the aperture passes through the aperture. At least two electrostatic shaping deflectors for returning the electron beam of the obtained pattern image to the original optical axis;
An electrostatic reduction lens that reduces the electron beam that has passed through these electrostatic shaping deflectors;
Electrostatic objective lens which reduces and projects the electron beam having passed through the electrostatic reduction lens onto the sample, and the electron beam that is reduction projected onto the specimen deflected onto the sample by the objective lens A main deflection objective lens composed of an electrostatic main deflector for drawing
An electrostatic sub-deflector that deflects the electron beam within a scanning region of the electrostatic main deflector;
An electron detector for detecting secondary electrons or reflected electrons generated when the sample is irradiated with the electron beam;
Bei to give a,
The main deflection objective lens is composed of a plurality of electrodes arranged on the same circumference, and shield electrodes arranged to face each other with these electrodes interposed therebetween.
Voltage control means for applying the same voltage to the plurality of electrodes to converge the electron beam, and applying a voltage to the plurality of electrodes to deflect the electron beam to an arbitrary position on the sample;
With
Aberration correction means for applying the same voltage to the plurality of electrodes of the main deflection objective lens and adjusting the amount of correction corresponding to the aberration generated in the electron optical system to the plurality of electrodes,
The aperture for cutting an unnecessary beam among the plurality of apertures and the electrostatic reduction lens are arranged close to each other, and the thickness of the shield electrode having the larger inner diameter in the electrostatic reduction lens is set to the inner diameter. An electron beam lithography apparatus characterized in that it is formed at least twice the thickness of a small shield electrode. In an electron beam drawing apparatus equipped with an electron optical system that at least shapes and deflects an electron beam and then projects it on a specimen in a reduced size,
The electron optical system includes a plurality of apertures arranged at predetermined positions in order to adjust the electron beam into an arbitrary shape,
An electrostatic illumination lens for adjusting the electron beam to an electron beam of an illumination beam;
The electron beam adjusted by the electrostatic illumination lens is deflected in order to obtain an aperture image composed of a combination of patterns of the plurality of apertures to control an irradiation position on the aperture, and the aperture passes through the aperture. At least two electrostatic shaping deflectors for returning the electron beam of the obtained pattern image to the original optical axis;
An electrostatic reduction lens that reduces the electron beam that has passed through these electrostatic shaping deflectors;
Electrostatic objective lens which reduces and projects the electron beam having passed through the electrostatic reduction lens onto the sample, and the electron beam that is reduction projected onto the specimen deflected onto the sample by the objective lens A main deflection objective lens composed of an electrostatic main deflector for drawing
An electrostatic sub-deflector that deflects the electron beam within a scanning region of the electrostatic main deflector;
An electron detector for detecting secondary electrons or reflected electrons generated when the sample is irradiated with the electron beam;
Bei to give a,
The main deflection objective lens is composed of a plurality of electrodes arranged on the same circumference, and shield electrodes arranged to face each other with these electrodes interposed therebetween.
Voltage control means for applying the same voltage to the plurality of electrodes to converge the electron beam, and applying a voltage to the plurality of electrodes to deflect the electron beam to an arbitrary position on the sample;
With
Aberration correction means for applying the same voltage to the plurality of electrodes of the main deflection objective lens and adjusting the amount of correction corresponding to the aberration generated in the electron optical system to the plurality of electrodes,
The shield electrode having a small inner diameter in the main deflection objective lens is disposed adjacent to or shared with the shield electrode of the electron detector, and the thickness of the shield electrode having a small inner diameter is at least twice the thickness of the shield electrode having a large inner diameter. An electron beam drawing apparatus formed as described above. An electrostatic pre-main deflector disposed upstream of the electron beam from the electrostatic main deflector and deflecting the electron beam to control aberration to a minimum with respect to the electrostatic main deflector;
An electrostatic pre-sub-deflector disposed upstream of the electron beam of the electrostatic sub-deflector and deflecting the electron beam to control aberration to the electrostatic sub-deflector to a minimum;
The electron beam drawing apparatus according to claim 1 or 2, further comprising:   The electrostatic pre-sub-deflector, the electrostatic pre-main deflector, the electrostatic sub-deflector, and the electrostatic main deflector are disposed along and adjacent to the traveling direction of the electron beam. The electrostatic pre-sub-deflector, the electrostatic pre-main deflector, the electrostatic sub-deflector, and the electrostatic main deflector each have a common shield electrode structure. The electron beam drawing apparatus according to claim 3. The electrostatic main deflector and the electrostatic pre main deflector have a pre main deflection center elect in order to establish an interlocking ratio of control voltages of 1: 1 in order to control the aberration to a minimum. 4. The electron beam drawing apparatus according to claim 3, wherein an axial length or inner diameter of the load is adjusted. The electrostatic sub-deflector and the electrostatic pre-sub-deflector have a pre-sub deflection center elect in order to establish an interlocking ratio of the control voltages of 1: 1 in order to control the aberration to a minimum. 4. The electron beam drawing apparatus according to claim 3, wherein an axial length or inner diameter of the load is adjusted. The control voltage of the electrostatic pre-main deflector with respect to the electrostatic main deflector is controlled in the adding direction, and the control voltage of the electrostatic pre-sub deflector with respect to the electrostatic sub-deflector is controlled in the subtracting direction. 4. The electron beam drawing apparatus according to claim 3, further comprising an aberration correction unit for controlling.

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