JP4671665B2 - Method for manufacturing display device - Google Patents

Description

  The present invention relates to a liquid crystal display device including an active element such as a transistor formed over a large area glass substrate and a manufacturing method thereof.

  Conventionally, a so-called active matrix liquid crystal display panel composed of thin film transistors (hereinafter also referred to as “TFTs”) on a glass substrate is a light exposure process using a photomask, as in the manufacturing technology of a semiconductor integrated circuit. Thus, it has been manufactured by patterning various thin films.

  Until now, a production technique has been adopted in which a plurality of liquid crystal display panels are cut out from a single mother glass substrate and mass production is efficiently performed. The size of the mother glass substrate was increased from 300 x 400 mm of the first generation in early 1990 to the fourth generation in 2000 and increased to 680 x 880 mm or 730 x 920 mm. Production technology has progressed so that

When the size of the glass substrate or the display panel is small, the patterning process can be performed relatively easily by the exposure apparatus. However, as the substrate size increases, the entire surface of the display panel can be obtained by a single exposure process. Cannot be processed simultaneously. As a result, a method has been developed in which a region coated with a photoresist is divided into a plurality of portions, an exposure process is performed for each predetermined block region, and the entire surface of the substrate is repeatedly exposed in order (for example, patents). Reference 1).
Japanese Patent Laid-Open No. 11-326951

  However, the size of the glass substrate is further increased to 1000 × 1200 mm or 1100 × 1300 mm in the fifth generation, and the size of 1500 × 1800 mm or more is assumed in the next generation. It has become difficult to manufacture display panels at good cost. That is, the processing time increases if exposure processing is performed many times by continuous exposure, and a great investment has been required to develop an exposure apparatus corresponding to the increase in the size of the substrate.

  In addition, the method of forming various coatings on the entire surface of the substrate and removing the etching while leaving a small area has a problem in that it wastes material costs and requires processing a large amount of waste liquid. It was inherent.

  The present invention has been made in view of such a situation, and an object of the present invention is to provide a liquid crystal display device that can be manufactured by improving the material utilization efficiency and simplifying the manufacturing process, and a manufacturing technique thereof. Yes.

  In the present invention, at least one or more of patterns necessary for manufacturing a liquid crystal display device such as a conductive layer for forming a wiring layer or an electrode or a mask layer for forming a predetermined pattern is selectively used. The liquid crystal display device is manufactured by forming the pattern by a method capable of forming a pattern. In order to form a conductive layer, an insulating layer, etc., as a method that can selectively form a pattern, it is possible to selectively eject droplets of a composition formulated for a specific purpose to form a predetermined pattern In addition, a droplet discharge method (also called an ink jet method depending on the method) is used. Further, when the conductor is formed by a droplet discharge method, a conductor with good adhesion can be formed by performing a base treatment on the formation surface. Note that. The surface to be formed means a surface on which a composition discharged by the droplet discharge means is formed.

A method for manufacturing a liquid crystal display device according to the present invention is characterized in that a substrate surface is subjected to a base treatment before a conductor is formed by a droplet discharge method.

The liquid crystal display device according to the present invention is manufactured by a droplet discharge method before film formation.
A base treatment is performed on a conductive surface to be formed.

The method for manufacturing a liquid crystal display device of the present invention includes a first step of forming a first electrode on a substrate having an insulating surface,
A second step of forming a first insulating film so as to cover the first electrode;
A third step of forming a first semiconductor layer on the first insulating film;
A fourth step of forming a second insulating film on the first semiconductor layer so as to overlap the first electrode;
A fifth step of forming an n-type second semiconductor layer so as to cover the second insulating film;
A sixth step of patterning the first and second semiconductor layers into island shapes;
A seventh step of forming second and third electrodes on the second semiconductor layer;
An eighth step of etching and separating the second semiconductor layer using the second and third electrodes as a mask;
A ninth step of forming a fourth electrode in contact with the third electrode;
Have
In the step of forming any one of the electrodes, the electrode is formed by a droplet discharge method.

A method for manufacturing a liquid crystal display device includes a first step of forming a first electrode over a substrate having an insulating surface;
A second step of forming a first insulating film so as to cover the first electrode;
A third step of forming a second electrode on the first insulating film;
A fourth step of forming a first semiconductor layer on the first insulating film and the second electrode;
A fifth step of forming a second insulating film on the first semiconductor layer so as to overlap the first electrode;
A sixth step of forming an n-type second semiconductor layer so as to cover the second insulating film;
A seventh step of patterning the first and second semiconductor layers into an island shape;
An eighth step of forming third and fourth electrodes on the second semiconductor layer;
A ninth step of etching and separating the second semiconductor layer using the third and fourth electrodes as a mask;
Have
In the step of forming any one of the electrodes, the electrode is formed by a droplet discharge method.

A method for manufacturing a liquid crystal display device includes a first step of forming first and second electrodes on a substrate having an insulating surface;
A second step of forming a third electrode so as to partially overlap the second electrode;
A third step of forming an n-type first semiconductor layer on the first electrode, the second electrode, and the third electrode;
A fourth step of separating the first semiconductor layer into a semiconductor layer in contact with the first electrode and a semiconductor layer in contact with the second electrode;
A fifth step of forming a second semiconductor layer on the first semiconductor layer;
A sixth step of forming an insulating film on the second semiconductor layer;
A seventh step of forming a fourth electrode on the insulating film and on the region where the first semiconductor layer is separated;
An eighth step of patterning the second semiconductor layer and the insulating film into an island shape;
Have
In the step of forming any one of the electrodes, the electrode is formed by a droplet discharge method.

A method for manufacturing a liquid crystal display device includes a first step of forming a first electrode over a substrate having an insulating surface;
A second step of forming a second electrode and a third electrode partially overlapping the first electrode;
A third step of forming an n-type first semiconductor layer on the first electrode, the second electrode, and the third electrode;
A fourth step of separating the first semiconductor layer into a semiconductor layer in contact with the second electrode and a semiconductor layer in contact with the third electrode;
A fifth step of forming a second semiconductor layer on the first semiconductor layer;
A sixth step of forming an insulating film on the second semiconductor layer;
A seventh step of forming a fourth electrode on the insulating film and on the region where the first semiconductor layer is separated;
An eighth step of patterning the second semiconductor layer and the insulating film into an island shape;
Have
In the step of forming any one of the electrodes, the electrode is formed by a droplet discharge method.

The method for manufacturing a liquid crystal display device according to the present invention is characterized in that a substrate surface is subjected to a base treatment before an electrode is formed by a droplet discharge method.

The method for manufacturing a liquid crystal display device of the present invention is characterized in that a base treatment is performed on an electrode before a film in contact with the electrode is formed by a droplet discharge method.

A method for manufacturing a liquid crystal display device includes forming a substance having a photocatalytic function on a formation surface as a base treatment, and selectively irradiating the substance having a photocatalytic function with light to make the substance hydrophilic.

A method for manufacturing a liquid crystal display device is characterized in that the base treatment includes performing plasma treatment on the surface to be formed to make it liquid repellent.

  As described above, the present invention is characterized in that a gate electrode layer, a wiring layer, and a mask used for patterning are formed by a droplet discharge method, which is necessary for manufacturing a liquid crystal display device. The object is achieved by manufacturing a liquid crystal display device by forming at least one or more of such patterns by a method capable of selectively forming a pattern.

  According to the present invention, a wiring layer and a mask can be directly patterned by a droplet discharge method. Therefore, a thin film transistor in which a material use efficiency is improved and a manufacturing process is simplified, and a liquid crystal using the thin film transistor. A display device can be obtained.

  Embodiments of the present invention will be described in detail with reference to the drawings. In addition, in the following description, in the equivalent site | part which is common between each drawing, it shall attach and show the same code | symbol, and it abbreviate | omits about the overlapping description. Further, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. The present invention is not construed as being limited to the following embodiments.

  FIG. 1 is a top view illustrating a configuration of a liquid crystal display panel according to the present invention. A pixel portion 101 in which pixels 102 are arranged in a matrix on a substrate 100 having an insulating surface, a scanning line side input terminal 103, and a signal line side. An input terminal 104 is formed. The number of pixels may be provided in accordance with various standards. For XGA, 1024 × 768 × 3 (RGB), for UXGA, 1600 × 1200 × 3 (RGB), and for full specification high vision, 1920 × 1080. X3 (RGB) may be used.

  The pixels 102 are arranged in a matrix form by intersecting a scanning line extending from the scanning line side input terminal 103 and a signal line extending from the signal line side input terminal 104. Each of the pixels 102 includes a switching element and a pixel electrode connected to the switching element. A typical example of the switching element is a TFT. By connecting the gate electrode side of the TFT to a scanning line and the source or drain side to a signal line, each pixel can be controlled independently by a signal input from the outside. Yes.

  A TFT includes a semiconductor layer, a gate insulating layer, and a gate electrode layer as main components, and a wiring layer connected to a source region and a drain region formed in the semiconductor layer is attached to the TFT. Structurally, the top gate type in which the semiconductor layer, the gate insulating layer and the gate electrode layer are arranged from the substrate side, and the bottom gate type in which the gate electrode layer, the gate insulating layer and the semiconductor layer are arranged from the substrate side are representative. In the present invention, any of those structures may be used.

  As a material for forming the semiconductor layer, an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor crystallized using energy or thermal energy, a semi-amorphous (also referred to as microcrystal or microcrystal, hereinafter, also referred to as “SAS”) semiconductor, or the like can be used.

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is the main component, the Raman spectrum shifts to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. At least 1 atomic% or more of hydrogen or halogen is contained as a neutralizing agent for dangling bonds. The SAS is formed by glow discharge decomposition (plasma CVD) of a silicide gas. As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4, and the} like can be used. Further, GeF ₄ may be mixed. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less.

  FIG. 1 shows a configuration of a liquid crystal display panel in which signals input to the scanning lines and signal lines by the liquid crystal display panel are controlled by an external drive circuit. As shown in FIG. 2, a COG (Chip on Glass) is shown. The driver ICs 105 and 106 may be mounted on the substrate 100. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate.

  In the case where a TFT provided for a pixel is formed using SAS, a scanning line side driver circuit 107 can be formed over the substrate 100 and integrated as shown in FIG. The protective diode 108 can also be integrally formed on the substrate 100.

  One mode of a droplet discharge device used for forming a pattern is shown in FIG. The individual heads 1403 of the droplet discharge means 1401 are connected to the control means 1404, which can draw a preprogrammed pattern under the control of the computer 1407. The drawing timing may be performed with reference to a marker 1408 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the image pickup means 1402 such as a CCD, and converted into a digital signal by the image processing means 1406 is recognized by the computer 1407 and a control signal is generated and sent to the control means 1404. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1405, and based on this information, a control signal is sent to the control means 1404, and each head 1403 of the droplet discharge means 1401 is sent. Can be controlled individually. Furthermore, an apparatus that can scan and draw a head that operates in any of the front, back, left, right, and diagonal directions may be used, or a droplet discharge apparatus that can discharge a large number of compositions from one head may be used. .

  Next, details of the pixel 102 will be described in accordance with a manufacturing process using a droplet discharge method.

(First embodiment)
As a first embodiment, a method for manufacturing a channel protective thin film transistor will be described.

  FIG. 4B shows a step of forming a gate electrode layer and a gate wiring layer connected to the gate electrode layer over the substrate 100 by a droplet discharge method. Note that FIG. 4B schematically shows a longitudinal cross-sectional structure, and a planar structure corresponding to AB and CD is shown in FIG.

  The substrate 100 has a heat resistance capable of withstanding the processing temperature of this manufacturing process in addition to a non-alkali glass substrate manufactured by a fusion method or a float method, such as barium borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass, or a ceramic substrate. A plastic substrate or the like can be used. Alternatively, a substrate in which an insulating layer is provided on the surface of a semiconductor substrate such as single crystal silicon or a metal substrate such as stainless steel may be used. Alternatively, a glass substrate that has been subjected to chemical mechanical polishing (CMP) may be used.

First, in order to improve adhesion when a conductor such as a gate electrode is formed on a substrate by a discharge method, a base treatment is performed.

    As a first method, a sputtering method, a vapor deposition method, or the like is used, and Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr (zirconium), It is made of a metal material of Hf (hafnium), V (vanadium), Ir (iridium), Nb (niobium), Pd (palladium), Pt (platinum), Mo (molybdenum), Co (cobalt) or Rh (rhodium). It is preferable to form a conductive layer. The conductor layer may be formed with a thickness of 0.01 to 10 nm. However, since the conductor layer may be formed extremely thin, it does not necessarily have a layer structure. This conductor layer is provided in order to form the gate electrode layer with good adhesion, and if sufficient adhesion is obtained, this is omitted and the gate electrode layer is formed directly on the substrate 100. You may do it. At this time, if the gate electrode is made of Ag, Cu, Ag / Cu, or the like, the adhesion is particularly improved.

  As a second method, a photocatalytic substance is formed on a region where a conductor is formed. The photocatalytic substance is formed by a sol-gel dip coating method, spin coating method, ink jet method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron sputtering method, plasma spray method, or anodizing method. Can do. In the case of a photocatalytic substance composed of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting the salts of constituent elements. When the photocatalytic substance is formed by a coating method such as a dip coating method or a spin coating method, it may be fired or dried when it is necessary to remove the solvent. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen. For example, when Ag is used as the conductive paste and baking is performed in an atmosphere containing oxygen and nitrogen, an organic substance such as a thermosetting resin is decomposed, so that Ag containing no organic substance can be obtained. As a result, the flatness of the Ag surface can be improved.

  By this heat treatment, the photocatalytic substance can have a predetermined crystal structure. For example, it has an anatase type and a rutile-anatase mixed type. In the low temperature phase, the anatase type is preferentially formed. Therefore, heating may be performed even when the photocatalytic substance does not have a predetermined crystal structure. Moreover, when forming by the apply | coating method, in order to obtain a predetermined film thickness, a photocatalyst substance can also be formed in multiple times.

In this embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

TiO _x formed in this way has a photocatalytic function even if it is a very thin film.

Then, in order to selectively irradiate with light and form an irradiation area | region, light is condensed using an optical system. For example, light is collected by a lens. Then, light irradiation is selectively performed by relatively moving TiO _x and light. As a result, an irradiation region and a non-irradiation region can be formed. The TiO _x in the irradiation region shows a hydrophilic property. Depending on the light irradiation time, both hydrophilicity and lipophilicity can be achieved.

As the light, a lamp (for example, an ultraviolet lamp, so-called black light) or laser light (for example, an XeCl excimer laser with an oscillation wavelength of 308 nm, an XeF excimer laser with an oscillation wavelength of 351 nm, or a KrF excimer laser with an oscillation wavelength of 248 nm) may be used. it can. It is preferable to use laser light that can oscillate a specific wavelength. The light may be light having a wavelength that activates TiO _x as a photocatalyst, and the light may be selectively irradiated using external light.

Since this step selectively irradiates light, it is performed in a dark room or at least a reaction room in which the wavelength of light having a wavelength for photocatalytic activation is removed or reduced. It is sufficient that at least the reaction chamber of the apparatus itself is a dark room, or at least the wavelength of light that activates the photocatalyst is removed or reduced.

Further, by selectively forming TiO _x in the region where the conductor is to be formed, the entire region can be irradiated with light. For example, TiO _x may be selectively formed by an ink jet method, a spin coating method in which a metal mask having a desired shape is arranged, and then light may be irradiated to the whole using a lamp, laser light, or the like. As a result, the selectively formed TiO _x becomes hydrophilic.

When TiO _x is selectively formed in this manner, light from external light or the like is irradiated after the formation of the thin film transistor or the semiconductor device, and TiO _x can be prevented from reacting unnecessarily. That is, in order to remove TiO _x formed other than under the conductive film, that is, TiO _x unnecessary for forming the wiring, there is no need to use a wet etching method or a dry etching method using the conductive film as a mask.

Alternatively, after forming TiO _x on the entire surface, a protective film is formed, the protective film is selectively removed, and light irradiation is performed to make TiO _x in a desired region for forming a conductor hydrophilic. it can. As means for selectively removing the protective film, dry etching or wet etching can be used. Alternatively, the protective film may be removed by laser ablation using a laser beam having a wavelength of light that activates photocatalytic activation of TiO _x with a certain power or more. In this case, selective removal of the protective film and photocatalytic activation of TiO _x can be performed simultaneously. Thereafter, in order to prevent the light having the wavelength for photocatalytic activation from being irradiated to the TiO _x , the protective film has a certain power or less, and a material that absorbs or reflects the light having the wavelength for photocatalytic activation is selected. . That is, the protective film is selected in consideration of irradiation with light having a wavelength for activating the photocatalyst included in external light. As a result, it is possible to prevent TiO _x from being irradiated with light having a wavelength for photocatalytic activation during movement between reaction chambers or during use as a product. In addition, the material used as the protective film can absorb or reflect the wavelength of light that activates the photocatalyst by controlling the film thickness. Further, the protective film may be formed by stacking a plurality of materials. As a result, light having a wavelength for photocatalytic activation can be absorbed or reflected over a wide range.

In this way, TiO _x can be selectively made hydrophilic. The width of the hydrophilic region may be a desired wiring width, and the light irradiation region may be narrowed by the optical system.

Incidentally, preferably TiO _x as a base treatment to a formation surface was hydrophilic to form a TiO _2, Ag as a conductive material for discharging formed, Cu, improvement particularly adhesion to form a stack of Ag / Cu attained .

This treatment is not limited to the base substrate and can be performed before and after the formation of the conductive layer.

As a third method, plasma treatment is performed on a formation surface such as a gate electrode. For example, when the formation surface of the gate electrode is a base film, plasma processing is performed on the base film. The plasma treatment may be performed in a non-contact manner with respect to the formation surface of the gate electrode.

The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas under a pressure of several tens of Torr to 800 Torr (106400 Pa), preferably 700 Torr (93100 Pa) to 800 Torr (atmospheric pressure or pressure near atmospheric pressure). An RF power source or an AC power source can be used as a power source for plasma processing. For example, using an AC power source, a voltage is applied under conditions such as an AC voltage of 100 V and a frequency of 13.56 MHz, and plasma is generated by changing the power. At this time, in order to discharge stable plasma, pulses are applied at intervals of 2 to 4 μsec. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as alcohol and oil.

In this embodiment, after forming a TiO ₂ layer over the entire substrate, a protective film (not shown) is formed, the protective film is selectively removed, and light irradiation is performed to form a conductor. The desired region of the TiO ₂ layer is made hydrophilic. Regions where the TiO ₂ layer is hydrophilic are indicated by TiO ₂ layers 205, 206, and 207 (FIG. 4A).

A composition containing a conductive material is discharged over the TiO ₂ layers 205, 206, and 207 by a droplet discharge method to form the gate wiring layer 202, the gate electrode layer 203, and the capacitor wiring layer 204 (FIG. 4B )). As a conductive material for forming these layers, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper)), W (tungsten), and Al (aluminum) is used. Can be used. Alternatively, light-transmitting indium tin oxide (ITO) and indium tin oxide containing silicon oxide (ITSO) may be combined. In particular, it is not preferable to reduce the resistance of the gate wiring layer, and it is preferable to use a material in which any one of gold, silver, and copper is dissolved or dispersed in consideration of the specific resistance value. More preferably, low resistance silver or copper may be used. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. The surface tension and the viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

Thereafter, when it is necessary to remove the solvent of the ejected dots, heat treatment is performed for baking or drying. Specifically, heating may be performed at a predetermined temperature, for example, 200 ° C. to 300 ° C., and heat treatment is preferably performed in an atmosphere containing oxygen. At this time, the heating temperature is set so that the gate electrode surface is not uneven. When using a dot containing silver (Ag) as in this embodiment, if heat treatment is performed in an atmosphere containing oxygen and nitrogen, organic substances such as a thermosetting resin such as an adhesive contained in the solvent are decomposed. Therefore, silver (Ag) which does not contain organic substances can be obtained. As a result, the flatness of the gate electrode surface can be improved and the specific resistance value can be lowered.

  The diameter of the nozzle used in the droplet discharge method is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 10 pl or less). ) Is preferable. There are two types of droplet discharge methods, an on-demand type and a continuous type, and either method may be used. Furthermore, the nozzle used in the droplet discharge method includes a piezoelectric method that utilizes the property of being deformed by voltage application of a piezoelectric body, and a heating method that discharges the composition by boiling the composition with a heater provided in the nozzle. Either of these methods may be used. The distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, and is preferably set to about 0.1 to 3 mm (preferably 1 mm or less). . While maintaining the relative distance between the nozzle and the object to be processed, one of the nozzle and the object to be processed moves to draw a desired pattern. In addition, plasma treatment may be performed on the surface of the object to be processed before the composition is discharged. This is to take advantage of the fact that the surface of the workpiece becomes hydrophilic or lyophobic when the plasma treatment is performed. For example, it becomes hydrophilic with respect to pure water and becomes lyophobic with respect to a paste using an alcohol as a solvent.

  The step of discharging the composition may be performed under reduced pressure. This is because the solvent of the composition volatilizes before the composition is discharged and landed on the object to be processed, and the subsequent drying and firing steps can be omitted or shortened. After discharge of the composition, one or both of drying and baking steps are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. The drying and firing steps are both heat treatment steps. For example, the drying is performed at 100 degrees for 3 minutes, and the firing is performed at 200 to 350 degrees for 15 minutes to 120 minutes. Time is different. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is 100 to 800 degrees (preferably 200 to 350 degrees). And By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to accelerate fusion and fusion. The atmosphere is an oxygen atmosphere, a nitrogen atmosphere or air. However, it is preferable to perform in an oxygen atmosphere in which the solvent in which the metal element is decomposed or dispersed is easily removed.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG or YVO ₄ doped with Cr, Nd, or the like. Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. In addition, a so-called hybrid laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that emits ultraviolet light or infrared light in an inert gas atmosphere to rapidly increase the temperature from several microseconds to several minutes. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, there is an advantage that only the outermost thin film can be heated substantially without affecting the lower layer film.

  Next, a gate insulating layer is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method (see FIG. 4C). In a particularly preferable mode, a three-layered structure including an insulator layer 208 made of silicon nitride, an insulator layer 209 made of silicon oxide, and an insulator layer 210 made of silicon nitride corresponds to the gate insulating layer. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film. By forming the first layer in contact with the gate wiring layer 202, the gate electrode layer 203, and the capacitor wiring layer 204 using silicon nitride or silicon nitride oxide, deterioration due to oxidation can be prevented.

  Next, the semiconductor layer 211 is formed. The semiconductor layer 211 is formed by AS or SAS manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane.

When the plasma CVD method is used, AS is formed using SiH ₄ which is a semiconductor material gas or a mixed gas of SiH ₄ and H ₂ . In SAS, SiH ₄ is diluted 3 to 1000 times with H ₂ , and the gas flow ratio of Si ₂ H ₆ to GeF ₄ is changed from 20 to 40 to 0.9 by mixing gas or Si ₂ H ₆ and GeF _4. When a diluted gas mixture is used, a SAS having a Si composition ratio of 80% or more can be obtained. In particular, the latter case is preferable because the semiconductor layer 211 can have crystallinity from the interface with the base.

  An insulator layer 212 is formed over the semiconductor layer 211 by a plasma CVD method or a sputtering method. As shown in a later step, the insulator layer 212 is left on the semiconductor layer 211 to face the gate electrode layer to form a channel protective layer. It is preferable that a dense film be formed to ensure the cleanliness of the interface and prevent the semiconductor layer 211 from being contaminated with impurities such as organic substances, metal substances, and water vapor. Even in the glow discharge decomposition method, a silicon nitride film formed by diluting a silicide gas with a rare gas such as argon 100 to 500 times can form a dense film even at a film forming temperature of 100 ° C. or less. preferable. If necessary, an insulating film may be stacked.

  As described above, in the steps so far, the insulator layer 208 to the insulator layer 212 can be continuously formed without being exposed to the air. In other words, each stacked interface can be formed without being contaminated by atmospheric components or contaminating impurity elements floating in the atmosphere, so that variations in TFT characteristics can be reduced.

  Next, the composition is selectively discharged over the insulator layer 212 to a position facing the gate electrode layer 203, so that a mask 213 is formed (see FIG. 4C). For the mask 213, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. Also, using organic materials such as benzocyclobutene, parylene, flare, permeable polyimide, compound materials made by polymerization of siloxane polymers, composition materials containing water-soluble homopolymers and water-soluble copolymers, etc. And formed by a droplet discharge method. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like dispersed or dissolved in a known solvent may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  The insulator layer 212 is etched using the mask 213, so that the insulator layer 214 functioning as a channel protective layer is formed. The mask 213 is removed, and an n-type semiconductor layer is formed over the semiconductor layer 211 and the insulator layer 214 (see FIG. 5A). The n-type semiconductor layer may be formed using silane gas and phosphine gas, and may be formed using AS or SAS. After that, next, a mask 216 is formed over the semiconductor layer by a droplet discharge method. The n-type semiconductor layer and the semiconductor layer 211 are etched using this mask 216 to form the semiconductor layer 217 and the n-type semiconductor layer 218 (see FIG. 5A). Note that FIG. 5A schematically shows a longitudinal sectional structure, and a planar structure corresponding to AB and CD is shown in FIG.

  Subsequently, after the mask 216 is removed, a composition containing a conductive material is selectively discharged, so that source and drain wiring layers 219 and 220 are formed by a droplet discharge method (see FIG. 5B). FIG. 5B schematically shows a longitudinal sectional structure, and FIG. 15 shows a planar structure corresponding to AB and CD. As shown in FIG. 15, a signal wiring 221 extending from one end of the substrate 100 is also formed. This is disposed so as to be electrically connected to the source and drain wiring layers 219. As a conductive material for forming the wiring layer, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper)), W (tungsten), and Al (aluminum) is used. Can be used. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

  Next, using the source and drain wiring layers 219 and 220 as a mask, the n-type semiconductor layer 218 over the insulator layer 214 is etched to form n-type semiconductor layers 222 and 223 that form source and drain regions. (See FIG. 5C.)

Subsequently, a composition containing a conductive material is selectively discharged so as to be electrically connected to the source / drain wiring layer 220, so that a pixel electrode layer 224 corresponding to the pixel electrode is formed. In the case of manufacturing a transmissive liquid crystal display panel, the pixel electrode layer 224 includes indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), and tin oxide (SnO ₂ ). The pixel electrode may be formed by baking a predetermined pattern with a composition including Further, when a reflective liquid crystal display panel is manufactured, metal particles such as Ag (silver), Au (gold), Cu (copper)), W (tungsten), and Al (aluminum) are mainly used. Compositions can be used. As another method, a transparent conductive film or a light reflective conductive film may be formed by a sputtering method, a mask pattern may be formed by a droplet discharge method, and a pixel electrode layer may be formed by combining etching processes ( (See FIG. 6A.) Note that FIG. 6A schematically shows a longitudinal cross-sectional structure, and a planar structure corresponding to AB and CD is shown in FIG.

  Through the above steps, a TFT substrate 100 for a liquid crystal display panel in which a bottom gate type (also referred to as an inverted stagger type) TFT and a pixel electrode are connected to the substrate 100 is completed.

  Next, an insulator layer 225 called an alignment film is formed by a printing method or a spin coating method so as to cover the pixel electrode layer 224. Note that the insulator layer 225 can be selectively formed as illustrated by using a screen printing method or an offset printing method. Then, rubbing is performed. Subsequently, a sealant 226 is formed in a peripheral region where pixels are formed by a droplet discharge method (see FIG. 6B).

  After that, the counter substrate 229 provided with the insulator layer 227 functioning as an alignment film and the conductor layer 228 functioning as a counter electrode and the TFT substrate 100 are bonded to each other through a spacer, and the liquid crystal layer 230 is provided in the gap. Thus, a liquid crystal display panel can be manufactured (see FIG. 6C). A filler may be mixed in the sealant 226, and a color filter, a shielding film (black matrix), or the like may be formed on the counter substrate 229. Note that as a method for forming the liquid crystal layer, a dispenser type (dropping type) or a dip type (pumping type) in which liquid crystal is injected using a capillary phenomenon after the counter substrate 229 is attached can be used.

  In the liquid crystal dropping injection method adopting the dispenser method, a closed loop is formed with the sealing material 226, and the liquid crystal is dropped once or plural times therein. Subsequently, the substrates are bonded together in a vacuum, and thereafter UV curing is performed to fill the liquid crystal.

Next, the insulator layers 208 to 210 in the region 231 illustrated in FIG. 7 are removed by an ashing process using oxygen gas under atmospheric pressure or in the vicinity of atmospheric pressure (see FIG. 7). This treatment is performed using oxygen gas and one or more selected from hydrogen, CF ₄ , NF ₃ , H ₂ O, and CHF ₃ . In this step, in order to prevent damage and destruction due to static electricity, ashing is performed after sealing using the counter substrate. .

  Subsequently, a wiring substrate 232 for connection is provided so that the gate wiring layer 202 is electrically connected through the anisotropic conductor layer. The wiring board 232 plays a role of transmitting signals and potentials from the outside. Through the above steps, a liquid crystal display panel including a channel protection type switching TFT 233 and a capacitor 234 is completed. The capacitor 234 is formed by the capacitor wiring layer 204, the gate insulating layer, and the pixel electrode layer 224.

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using the droplet discharge method, a liquid crystal display panel can be easily manufactured even if a glass substrate of the fifth generation or more with one side exceeding 1000 mm is used. be able to.

(Second Embodiment)
In the first embodiment, the structure in which the pixel electrode layer 224 and the source / drain wiring layer 220 directly form a contact is shown. However, as another embodiment, an insulating layer may be interposed between the two. .

  In this case, after the steps up to FIG. 5C are completed, the insulator layer 240 functioning as a protective film is formed (see FIG. 8A). As this protective film, a silicon nitride or silicon oxide film formed by sputtering or plasma CVD may be used. An opening 241 needs to be formed in the insulator layer 240, and the source / drain wiring layer 220 and the pixel electrode layer 224 are electrically connected through the opening 241 (see FIG. 8B). Note that when the opening 241 is formed, an opening 242 necessary for attaching the connection terminal later is preferably formed at the same time. After that, an insulating layer 244 is formed.

  A method for forming the openings 241 and 242 is not particularly limited. For example, the openings can be selectively opened by plasma etching at atmospheric pressure, or a wet etching process is performed after forming a mask by a droplet discharge method. You can go. Further, if an insulating siloxane film is formed by forming an inorganic siloxane or organic siloxane film by a droplet discharge method, the step of forming an opening can be omitted. Note that the insulating layer 244 is used as an alignment film.

  As described above, the liquid crystal display panel shown in FIG. 9 is completed.

(Third embodiment)
As a third embodiment, a method for manufacturing a channel-etched thin film transistor will be described.

A composition containing a conductive material is discharged over the substrate 100 by a droplet discharge method, so that the gate wiring layer 202, the gate electrode layer 203, and the capacitor wiring layer 204 are formed. Next, a gate insulating layer is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method. In a particularly preferable mode, a three-layered structure including an insulator layer 208 made of silicon nitride, an insulator layer 209 made of silicon oxide, and an insulator layer 210 made of silicon nitride corresponds to the gate insulating film. Further, a semiconductor layer 211 functioning as an active layer is formed. The above steps are the same as those in the first embodiment.

  An n-type semiconductor layer 301 is formed over the semiconductor layer 211 (see FIG. 10A). Next, a mask 302 is formed by selectively discharging a composition over the n-type semiconductor layer 301. Subsequently, the semiconductor layer 211 and the n-type semiconductor layer 301 are simultaneously etched using the mask 302 to form the semiconductor layer 303 and the n-type semiconductor layer 304. After that, a composition containing a conductive material is discharged over the n-type semiconductor layer 304 to form source and drain wiring layers 305 and 306 (see FIG. 10B).

  Next, using the source and drain wiring layers 305 and 306 as a mask, the n-type semiconductor layer 304 is etched to form n-type semiconductor layers 307 and 308. At this time, the semiconductor layer 303 is also slightly etched to form the semiconductor layer 309. Subsequently, the pixel electrode layer 310 is formed by discharging a composition containing a conductive material so as to be electrically connected to the source and drain wiring layers 306 (see FIG. 10C).

  Next, an insulator layer 311 that functions as an alignment film is formed. Subsequently, a sealing material 312 is formed, and the substrate 100 and the substrate 315 on which the counter electrode 314 and the alignment film 313 are formed are attached using the sealing material 312. After that, a liquid crystal layer 316 is formed between the substrate 100 and the substrate 315. Next, when the region to which the connection terminal 317 is attached is exposed by etching at or near atmospheric pressure, and the connection terminal 317 is attached, a liquid crystal display panel having a display function can be manufactured (FIG. 11). reference.).

(Fourth embodiment)
In the fourth embodiment, a method for manufacturing a liquid crystal display device having a channel protective thin film transistor in which a drain wiring overlaps with a pixel electrode, unlike in the first and second embodiments, will be described with reference to FIGS. .

As described in the first embodiment, a composition containing a conductive material is discharged by a droplet discharge method over the substrate 100 subjected to the base treatment, so that the gate electrode layer 203 and the capacitor wiring layer 204 are formed. As the base treatment of the substrate 100 here, first, a Ti film 1100 formed on the substrate 100 by sputtering or CVD is baked in an oven to form TiO ₂ . After that, an activation region 1101 is formed by selectively irradiating a region where the conductor is discharged and formed by a droplet discharge method.

Next, a gate insulating layer is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method. Here, a two-layered structure of the insulator layer 208 made of silicon nitride and the insulator layer 209 made of silicon oxide corresponds to the gate insulating layer. Needless to say, as in Embodiment Mode 1, a three-layer stack may be used in combination of silicon nitride and silicon oxide. After that, a pixel electrode 9001 is formed by discharging a composition containing a conductive material (FIG. 29A). The pixel electrode 9001 is a composition containing indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like by a droplet discharge method. A predetermined pattern may be formed by the above, and the pixel electrode may be formed by baking.

  Preferably, the pixel electrode is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), or the like by a sputtering method. More preferably, indium tin oxide containing silicon oxide may be used by a sputtering method using a target containing 2 to 10% by weight of silicon oxide in ITO.

Subsequently, a semiconductor layer 9002 functioning as an active layer is formed (FIG. 29B). As the semiconductor layer, a polycrystalline semiconductor obtained by crystallizing an amorphous semiconductor, SAS, or the like can be used. After that, an insulator layer 214 to be a channel protective layer is formed over the semiconductor layer 9002 by using the method described in Embodiment 1 so as to substantially overlap with the gate electrode layer 203. (FIG. 29 (C)). Thereafter, an n-type semiconductor layer 9003 is formed by a CVD method using silane and phosphine gas (FIG. 29D), and a mask 216 for patterning the semiconductor layer is formed by a droplet discharge method (FIG. 30D A)).

Subsequently, the n-type semiconductor layer 9003 and the semiconductor layer 9002 are etched and patterned using the mask 216. Thus, the pixel electrode 9001 is separated (FIG. 30B). After that, a composition containing a conductive material is selectively discharged by a droplet discharge method, source and drain wiring layers 9004 and 9005 are formed, and the n-type semiconductor layer 9003 and the pixel electrode 9001 are electrically connected (FIG. 30C). ). At this time, in order to improve the adhesion between the source and drain wirings, a liquid containing a conductive material is discharged after a base treatment is performed on the n-type semiconductor layer 9003 as used for the base treatment of the substrate. Adhesive source and drain wirings can be formed. As the composition containing a conductive material, a composition containing Ag and Cu can be used, and a wiring having a single layer or a laminated structure of Ag / Cu may be formed.

Subsequently, the n-type semiconductor layer 9003 is etched using the source and drain wiring layers 9004 and 9005 as a mask (FIG. 30D). Through the above steps, a TFT substrate for a liquid crystal panel can be formed. A top view of the TFT substrate for the liquid crystal panel is shown in FIG. A TFT substrate for a liquid crystal panel shown in FIG. 30D shows a cross-sectional view between dotted lines CD.

Note that the n-type semiconductor layer 9003 is etched using the source and drain wiring layers 9004 and 9005 as a mask without providing the insulator layer 214 to be a channel protective layer described with reference to FIG. A liquid crystal panel TFT substrate as shown in FIG. 31 can be formed by separating and etching to the middle of the semiconductor layer as it is.

Subsequently, as in the first embodiment, a substrate provided with an insulator layer functioning as an alignment film and a conductor layer functioning as a counter electrode and the TFT substrate manufactured in this embodiment are interposed with a spacer. A liquid crystal panel can be formed by pasting together and enclosing a liquid crystal material in the space.

In this embodiment mode, in the manufacture of a liquid crystal display device, the adhesion as shown in the first embodiment is applied to a formation surface in any one step before and after forming a conductor by using a droplet discharge method. It is characterized by performing pretreatment to improve it.

(Fifth embodiment)
In the fifth embodiment, a method for manufacturing a liquid crystal display device including a thin film transistor in which an n-type semiconductor layer is electrically connected to a pixel electrode directly and through a drain wiring will be described.

As described in the first embodiment, after the gate electrode layer 203, the capacitor wiring layer 204, the insulator layer 208, and the insulator layer 209 are formed, the semiconductor layer 9101 and the insulator layer 214 are formed (FIG. 32). (A)). Needless to say, these may be formed by the droplet discharge method after the base pretreatment as shown in Embodiment Mode 1 is performed. After that, a mask 216 for patterning the semiconductor layer 9101 is formed by discharging by a droplet discharge method (FIG. 32B), and the semiconductor layer 9101 is patterned using the mask 216 (FIG. 32B). . Subsequently, the mask is removed, and an N-type semiconductor layer 9102 is formed (FIG. 32C). After that, a composition containing a conductive material is discharged by a droplet discharge method to form source and drain wirings 9103 and 9104 (FIG. 32D). Subsequently, the n-type semiconductor layer 9102 is separated and patterned using the source and drain wirings 9103 and 9104 (FIG. 33A). Subsequently, a pixel electrode 9105 is formed by discharging a composition containing a conductive material by a droplet discharge method so as to be in contact with the drain wiring layer 9104 (FIG. 33B). The pixel electrode 9105 is a composition including indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like by a droplet discharge method. A predetermined pattern may be formed by the above, and the pixel electrode may be formed by baking.

Subsequently, the substrate provided with the insulator layer functioning as an alignment film and the conductor layer functioning as a counter electrode and the TFT substrate manufactured in this embodiment are bonded to each other with a spacer in the same manner as in the first embodiment, A liquid crystal material can be sealed in the space to form a liquid crystal panel.

In this embodiment mode, in the manufacture of a liquid crystal display device, the adhesion as shown in the first embodiment is applied to a formation surface in any one step before and after forming a conductor by using a droplet discharge method. It is characterized by performing pretreatment to improve it.

(Sixth embodiment)
As a sixth embodiment, a method for manufacturing a liquid crystal display device having a forward staggered thin film transistor will be described.

As described in the first embodiment, a composition containing a conductive material is discharged onto a substrate that has undergone a base treatment by a droplet discharge method, so that source and drain wiring layers 9201 and 9202 are formed (FIG. 34). (A)). After that, a pixel electrode 9203 is formed by discharging a composition containing a conductive material (FIG. 34B). When a pixel electrode is formed, a method similar to that of the base treatment of the substrate described in the first embodiment can be performed on the drain wiring layer 9202 or the substrate 100 to form the pixel electrode with good adhesion. After that, an n-type semiconductor layer 9204 is formed (FIG. 34C), and then a mask 9205 for patterning the n-type semiconductor layer 9204 is discharged by a droplet discharge method (FIG. 34D). Using this mask, the n-type semiconductor layer 9204 is separated and patterned (FIG. 34E). Two layers of a semiconductor film 9206 and gate insulating films 9207 and 9208 are formed (FIGS. 34F and 34G). Of course, the gate insulating film may have a three-layer structure as in the first embodiment. After that, a pixel electrode 9209 is formed by discharging a composition containing a conductive material over the gate insulating film 9208 located above the n-type semiconductor layer (FIG. 34H). Subsequently, a mask 9210 for patterning the semiconductor layer 9206 is formed by a droplet discharge method (FIG. 34I), and the gate insulating films 9208 and 9207 and the semiconductor layer 9206 are etched and patterned.

Through the above steps, a TFT substrate for a liquid crystal panel can be formed. A top view of the TFT substrate for the liquid crystal panel is shown in FIG. The TFT substrate for a liquid crystal panel shown in FIG. 34J represents a cross-sectional view between dotted lines CD.

Subsequently, the substrate provided with the insulator layer functioning as an alignment film and the conductor layer functioning as a counter electrode and the TFT substrate manufactured in this embodiment are bonded to each other with a spacer in the same manner as in the first embodiment, A liquid crystal material can be sealed in the space to form a liquid crystal panel.

In this embodiment, in manufacturing a liquid crystal display device, adhesion as shown in the first embodiment is improved at a discharge destination in any one process before and after forming a conductor using a droplet discharge method. It is characterized by performing preprocessing.

(Seventh embodiment)
As a seventh embodiment, a manufacturing method of a liquid crystal display device having a forward staggered thin film transistor having a structure in which a drain wiring covers a pixel electrode will be described as a sixth embodiment.

As described in the first embodiment, a composition containing a conductive material is discharged by a droplet discharge method over a substrate that has undergone base treatment, so that a pixel electrode 9301 is formed (FIG. 35A). Similarly, source and drain wiring layers 9302 and 9303 are formed (FIG. 35B). The drain wiring layer is selectively formed so as to partially overlap the pixel electrode. After that, an n-type semiconductor layer 9304 is formed, and a mask 9305 for separating and patterning the n-type semiconductor layer is formed by a droplet discharge method. (FIG. 35D). The n-type semiconductor layer 9304 is separated and patterned using this mask (FIG. 35D). After that, two layers of a semiconductor layer 9306 and gate insulating films 9307 and 9308 are formed (FIGS. 35F and 35G). Of course, the gate insulating film may have a three-layer structure as in the first embodiment. After that, a composition containing a conductive material is discharged over the gate insulating film 9308 located above the n-type semiconductor layer, so that a gate electrode 9309 is formed (FIG. 35H). Subsequently, a mask 9310 for patterning the semiconductor layer 9306 is formed by a droplet discharge method (FIG. 35I), and the gate insulating films 9307 and 9308 and the semiconductor layer 9306 are etched and patterned to form a TFT substrate for a liquid crystal panel. (FIG. 35 (J)).

Through the above steps, a TFT substrate for a liquid crystal panel can be formed. A top view of this TFT substrate for a liquid crystal panel is shown in FIG. A TFT substrate for a liquid crystal panel shown in FIG. 35J represents a cross-sectional view taken along a dotted line CD in FIG.

Subsequently, the substrate provided with the insulator layer functioning as an alignment film and the conductor layer functioning as a counter electrode and the TFT substrate manufactured in this embodiment are bonded to each other with a spacer in the same manner as in the first embodiment, A liquid crystal material can be sealed in the space to form a liquid crystal panel.

In this embodiment, in manufacturing a liquid crystal display device, adhesion as shown in the first embodiment is improved at a discharge destination in any one process before and after forming a conductor using a droplet discharge method. It is characterized by performing preprocessing.

(Eighth embodiment)
36A and 36B are cross-sectional views of a TFT substrate for a liquid crystal display device manufactured without providing an n-type semiconductor in the manufacturing method described in the sixth embodiment and the seventh embodiment. .

In order to manufacture the TFT substrate for liquid crystal display shown in FIG. 36A, the steps described with reference to FIGS. 34C, 34D, and E can be omitted, and the manufacturing process of the liquid crystal display device can be simplified. I can plan.

The process described with reference to FIGS. 35C, 35D, and 35E can be omitted for manufacturing the liquid crystal display TFT substrate shown in FIG. 36B, and the manufacturing process of the liquid crystal display device can be simplified. I can plan.

  1st Embodiment, 2nd Embodiment, 3rd Embodiment, 4th Embodiment, 5th Embodiment, 6th Embodiment, 7th Embodiment, and 1st Embodiment In the liquid crystal display panel manufactured according to the eighth embodiment, the driving circuit on the scanning line side can be formed on the substrate 100 as described in FIG.

FIG. 20 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS that can obtain a field effect mobility of 1 to 15 cm ² / V · sec.

  In FIG. 20, a block denoted by 500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. Reference numeral 501 denotes a buffer circuit to which a pixel 502 (corresponding to the pixel 102 in FIG. 3) is connected.

  FIG. 21 shows a specific configuration of the pulse output circuit 500, and the circuit is composed of n-channel TFTs 601 to 613. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

  Further, a specific configuration of the buffer circuit 501 is shown in FIG. Similarly, the buffer circuit is composed of n-channel TFTs 620 to 635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm.

  In order to realize such a circuit, the TFTs need to be connected to each other by wiring, and a configuration example of the wiring in that case is shown in FIG. In FIG. 12, as in the first embodiment, the gate electrode layer 203, the gate insulating layer (the insulator layer 208 made of silicon nitride, the insulator layer 209 made of silicon oxide, and the insulator layer 210 made of silicon nitride are shown. 3 layer stack), semiconductor layer 217 formed of SAS, insulator layer 214 forming channel protection layer, n-type semiconductor layers 222 and 223 forming source and drain, source and drain wiring layers 219 and 220 The state where is formed is shown. In this case, connection wiring layers 1201, 1202, and 1203 are formed on the substrate 100 in the same process as the gate electrode layer 203. Then, a part of the gate insulating layer is etched so that the connection wiring layers 1201, 1202, and 1203 are exposed. Various circuits can be realized by appropriately connecting TFTs with the source and drain wiring layers 219 and 220 and the connection wiring layer 235 formed in the same process.

  FIG. 26 illustrates one mode in which protective diodes are provided in the scanning line side input terminal portion and the signal line side input terminal portion with reference to FIG. In FIG. 26, the pixel 102 is provided with a TFT 260. This TFT has the same configuration as that of the first embodiment.

  Protection diodes 261 and 262 are provided at the signal line side input terminal portion. This protection diode is manufactured in the same process as the TFT 260, and is operated as a diode by connecting the gate and one of the drain and the source. An equivalent circuit diagram of the top view shown in FIG. 26 is shown in FIG.

  The protection diode 261 includes a gate electrode layer 250, a semiconductor layer 251, a channel protection insulating layer 252, and a wiring layer 253. The protective diode 262 has a similar structure. Common potential lines 254 and 255 connected to the protection diode are formed in the same layer as the gate electrode layer. Therefore, in order to be electrically connected to the wiring layer 253, it is necessary to form a contact hole in the gate insulating layer. A signal is input from the signal wiring layer 256 to the source of the TFT 260.

  The contact hole for the gate insulating layer may be etched by forming a mask layer by a droplet discharge method. In this case, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  In addition, protective diodes 263, 264, and a capacitor element 265 are formed in the input terminal portion on the scanning line side. Note that the position where the protective diode is inserted is not limited to this embodiment mode, and can be provided between the driver circuit and the pixel as described with reference to FIG.

    Next, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, the sixth embodiment, and the seventh embodiment. A mode in which the driver circuit is mounted on the liquid crystal display panel manufactured according to the mode and the eighth embodiment will be described with reference to FIGS.

  First, a display device employing a COG method is described with reference to FIG. Over a substrate 1001, a pixel portion 1002 for displaying information such as characters and images, and driving circuits 1003 and 1004 on the scanning side are provided. Substrates 1005 and 1008 provided with a plurality of drive circuits are divided into rectangular shapes, and the divided drive circuits (hereinafter referred to as IC chips) are mounted on the substrate 1001. FIG. 17A shows a form in which a plurality of IC chips 1007 and a tape 1006 are mounted on the tips of the IC chips 1007. FIG. 17B shows a form in which the tape 1009 is mounted on the tip of the IC chip 1010 and the IC chip 1010.

  Next, a display device employing a TAB method is described with reference to FIG. Over the substrate 1001, a pixel portion 1002 and driving circuits 1003 and 1004 on the scanning side are provided. FIG. 18A illustrates a mode in which a plurality of tapes 1006 are attached to a substrate 1001 and an IC chip 1007 is mounted on the tapes 1006. FIG. 18B shows a mode in which a tape 1009 is attached to a substrate 1001 and an IC chip 1010 is mounted on the tape 1009. When the latter is adopted, a metal piece or the like for fixing the IC chip 1010 may be attached together because of strength problems.

  A plurality of IC chips mounted on these liquid crystal display panels are preferably formed on rectangular substrates 1005 and 1008 each having a side of 300 mm to 1000 mm or more from the viewpoint of improving productivity.

  That is, a plurality of circuit patterns having a drive circuit portion and an input / output terminal as one unit are formed on the substrates 1005 and 1008, and finally divided and taken out. In consideration of the length of one side of the pixel portion and the pixel pitch, the long side of the IC chip has a long side of 15 to 80 mm and a short side of 15 to 80 mm as shown in FIGS. It may be formed in a rectangular shape of 1 to 6 mm, or as shown in FIGS. 17B and 18B, a length obtained by adding one side of the pixel portion 1002 and one side of each of the drive circuits 1003 and 1004 You may form in.

  The advantage of the external dimensions of the driver IC over the IC chip is in the length of the long side. When an IC chip formed with a long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion 1002 Therefore, the manufacturing yield can be improved. Further, when a driver IC is formed over a glass substrate, the shape of the substrate used as a base is not limited, and thus productivity is not impaired. This is a great advantage compared with the case where the IC chip is taken out from the circular silicon wafer.

  17A and 17B, and FIGS. 18A and 18B, an IC chip 1007 or 1010 on which a driver circuit is formed is mounted in a region outside the pixel portion 1002. These IC chips 1007 or 1010 are drive circuits on the signal line side. In order to form a pixel portion corresponding to RGB full color, 3072 signal lines are required in the XGA class, and 4800 lines are required in the UXGA class. The signal lines formed in this number are divided into several blocks at the end of the pixel portion 1002 to form lead lines, and the signal lines are collected according to the pitch of the output terminals of the IC chip 1007 or 1010. .

  The driver IC is preferably formed of a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiating continuous-emitting laser light. Therefore, a continuous light emitting solid state laser or gas laser is used as an oscillator for generating the laser light. When a continuous light emission laser is used, a transistor can be formed using a polycrystalline semiconductor layer having a large grain size with few crystal defects. In addition, since the mobility and response speed are good, high-speed driving is possible, the operating frequency of the element can be improved as compared with the prior art, and there is less variation in characteristics, so that high reliability can be obtained. Note that for the purpose of further improving the operating frequency, the channel length direction of the transistor and the scanning direction of the laser light are preferably matched. This is because, in the laser crystallization process using a continuous emission laser, the highest mobility is obtained when the channel length direction of the transistor and the scanning direction of the laser beam with respect to the substrate are substantially parallel (preferably −30 ° to 30 °). It is because it is obtained. Note that the channel length direction corresponds to the direction in which current flows in the channel formation region, in other words, the direction in which charges move. The transistor thus fabricated has an active layer composed of a polycrystalline semiconductor layer in which crystal grains extend in the channel direction, which means that the crystal grain boundaries are formed substantially along the channel direction. means.

  In order to perform laser crystallization, it is preferable to significantly narrow the laser beam, and the width of the beam spot is preferably about 1 to 3 mm, which is the same width of the short side of the driver IC. In order to ensure a sufficient and efficient energy density for the irradiated object, the laser light irradiation region is preferably linear. However, the line shape here does not mean a line in a strict sense, but means a rectangle or an ellipse having a large aspect ratio. For example, the term “on a line” means that the aspect ratio is 2 or more (preferably 10 to 10,000). In this manner, a method for manufacturing a display device with improved productivity can be provided by setting the width of the laser beam spot equal to the length of the short side of the driver IC.

  17 and 18, the scanning line driving circuit is formed integrally with the pixel portion, and a driver IC is mounted as a signal line driving circuit. However, the present invention is not limited to this mode, and a driver IC may be mounted as both the scanning line driving circuit and the signal line driving circuit. In that case, the specifications of the driver ICs used on the scanning line side and the signal line side may be different.

In the pixel portion 1002, a signal line and a scanning line intersect to form a matrix, and a transistor is disposed corresponding to each intersection. The present invention is characterized in that a TFT using an amorphous semiconductor or a semi-amorphous semiconductor as a channel portion is used as a transistor arranged in the pixel region 1002. The amorphous semiconductor is formed by a method such as a plasma CVD method or a sputtering method. A semi-amorphous semiconductor can be formed by a plasma CVD method at a temperature of 300 ° C. or lower. For example, even a non-alkali glass substrate having an outer dimension of 550 × 650 mm has a film thickness necessary for forming a transistor. Is formed in a short time. Such a feature of the manufacturing technique is effective in manufacturing a large-screen display device. In addition, a semi-amorphous TFT can obtain a field effect mobility of ² to 10 cm ² / V · sec by forming a channel formation region with SAS. Therefore, this TFT can be used as a switching element for a pixel or an element constituting a driving circuit on the scanning line side. Therefore, a liquid crystal display panel that realizes system-on-panel can be manufactured.

  Note that FIGS. 17 and 18 are shown on the premise that the scanning line side driving circuit is integrally formed on the substrate by using the TFT in which the semiconductor layer is formed of SAS according to the third embodiment. In the case of using a TFT in which the semiconductor layer is formed of AS, an IC chip may be mounted as both the scanning line side driving circuit and the signal line side driving circuit.

  In that case, it is preferable to make the specifications of the IC chips used on the scanning line side and the signal line side different. For example, although a transistor constituting the scanning line side driving circuit is required to have a withstand voltage of about 30 V, the driving frequency is 100 kHz or less, and a relatively high speed operation is not required. Accordingly, it is preferable to set the channel length (L) of the transistors included in the driver circuit on the scan line side to be sufficiently large. On the other hand, it is sufficient for the transistor of the driving circuit on the signal line side to have a withstand voltage of about 12 V, but the driving frequency is about 65 MHz at 3 V, and high speed operation is required. Therefore, it is preferable to set the channel length and the like of the transistors constituting the driver circuit on the micron rule.

  FIG. 19 shows a configuration in which an IC chip is mounted by COG, and shows a case corresponding to the case of the liquid crystal display panel shown in FIG. FIG. 19A shows a structure in which an IC chip 106 is mounted on the TFT substrate 100 using an anisotropic conductive material. A pixel portion 101 and a signal line side input terminal 104 (the same applies to the scanning line input terminal 103) are provided on the TFT substrate 100. The counter substrate 229 is bonded to the TFT substrate 100 with a sealing material 226, and a liquid crystal layer 230 is formed therebetween.

  An FPC 812 is bonded to the signal line side input terminal 104 with an anisotropic conductive material. The anisotropic conductive material is composed of resin 815 and conductive particles 814 having a diameter of several tens to several hundreds μm with Au or the like plated on the surface, and is formed on the signal line side input terminal 104 and the FPC 812 by the conductive particles 814. The wiring 813 is electrically connected. The IC chip 106 is also bonded to the TFT substrate 100 with an anisotropic conductive material, and the input / output terminals 809 and the signal line side input terminals 104 provided on the IC chip 106 are formed by conductive particles 810 mixed in the resin 811. Electrically connected.

  Further, as shown in FIG. 19B, the IC chip 106 is fixed to the TFT substrate 100 with an adhesive 816, and the input / output terminal of the IC chip and the lead wire or connection wiring are connected by the Au wire 817. good. Then, sealing is performed with a sealing resin 818. Note that the IC chip mounting method is not particularly limited, and a known COG method, wire bonding method, or TAB method can be used.

  By making the thickness of the IC chip the same as that of the counter substrate, the height between the two becomes substantially the same, which contributes to the reduction in thickness of the entire display device. In addition, since each substrate is made of the same material, thermal stress is not generated even when a temperature change occurs in the display device, and the characteristics of a circuit made of TFTs are not impaired. In addition, by mounting the driving circuit with a long IC chip as shown in this embodiment, the number of IC chips mounted on one pixel portion can be reduced.

  As described above, a driving circuit can be incorporated in the liquid crystal display panel.

  A liquid crystal television receiver can be completed by the liquid crystal display panel manufactured according to Embodiment 3. FIG. 23 is a block diagram showing a main configuration of the liquid crystal television receiver. In the liquid crystal display panel, only the pixel portion 401 is formed as shown in FIG. 1, and the scanning line side driver circuit 403 and the signal line side driver circuit 402 are mounted by the TAB method, and as shown in FIG. In the case where the pixel portion 401 and the periphery thereof are mounted with the scanning line side driver circuit 403 and the signal line side driver circuit 402 by the COG method, a TFT is formed by SAS as shown in FIG. 401 and the scanning line side driving circuit 403 are integrally formed on the substrate and the signal line side driving circuit 402 is separately mounted as a driver IC. However, any form may be employed.

  As other external circuit configurations, on the video signal input side, among the signals received by the tuner 404, the video signal amplification circuit 405 that amplifies the video signal, and the signal output therefrom is each of red, green, and blue colors. And a control circuit 407 for converting the video signal into an input specification of the driver IC. The control circuit 407 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 408 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 404, the audio signal is sent to the audio signal amplification circuit 409, and the output is supplied to the speaker 413 through the audio signal processing circuit 410. The control circuit 411 receives control information on the receiving station (reception frequency) and volume from the input unit 412, and sends a signal to the tuner 404 and the audio signal processing circuit 410.

  FIG. 24 shows an example of a liquid crystal display module. A TFT substrate 100 and a counter substrate 229 are fixed by a sealant 226, and a pixel portion 101 and a liquid crystal layer 230 are provided therebetween to form a display region. The colored layer 270 is necessary for color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. Polarizing plates 271 and 272 are disposed outside the TFT substrate 100 and the counter substrate 229. The light source is composed of a cold cathode tube 275 and a light guide plate 259. The circuit board 274 is connected to the TFT substrate 100 by a flexible wiring board 273, and an external circuit such as a control circuit or a power supply circuit is incorporated.

  FIG. 25 shows a state in which the liquid crystal display module is incorporated in a housing 2301 to complete a television receiver. A display screen 2303 is formed using a liquid crystal display module, and speakers 2302 and 2304, operation switches 2305, and the like are provided as additional equipment. As described above, a television receiver can be completed according to the present invention.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

It is a top view explaining the structure of the liquid crystal display panel of this invention. It is a top view explaining the structure of the liquid crystal display panel of this invention. It is a top view explaining the structure of the liquid crystal display panel of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. It is sectional drawing explaining the manufacturing method of the liquid layer display apparatus of this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. It is a figure explaining the mounting method (COG system) of the drive circuit of the liquid crystal display device of this invention. It is a figure explaining the mounting method (TAB system) of the drive circuit of the liquid crystal display device of this invention. It is a figure explaining the mounting method (COG system) of the drive circuit of the liquid crystal display device of this invention. It is a figure explaining the circuit structure in the case of forming a scanning line side drive circuit by TFT in the liquid crystal display device of this invention. It is a figure explaining the circuit structure in the case of forming the scanning line side drive circuit by TFT in the liquid crystal display device of this invention (shift register circuit). FIG. 5 is a diagram illustrating a circuit configuration when a scanning line side driving circuit is formed of TFTs in the liquid crystal display device of the present invention (buffer circuit). It is a block diagram which shows the main structures of the liquid crystal television receiver of this invention. It is a figure explaining the structure of the liquid crystal display module of this invention. It is a figure explaining the structure of the television receiver completed by this invention. It is a top view illustrating a liquid crystal display device of the present invention. FIG. 27 is an equivalent circuit diagram of the liquid crystal display device described in FIG. 26. It is a figure explaining the structure of the droplet discharge apparatus which can be applied to this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a liquid crystal display device of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Substrate 101 Pixel part 102 Pixel 103 Scan line side input terminal 104 Signal line input side input terminal 107 Scan line side drive circuit 201 Signal line 202 Gate line layer 203 Gate electrode layer 204 Capacitor line layer 205 TiO ₂ layer 206 TiO ₂ layer 207 TiO ₂ layer 208 Insulator layer 209 Insulator layer 210 Insulator layer 211 Semiconductor layer 212 Insulator layer 213 Mask 214 Insulator layer 216 Mask 217 Semiconductor layer 218 Semiconductor layer 219 Source and drain wiring layer 220 Source and drain wiring layer 221 Signal Wiring 222 Semiconductor layer 223 Semiconductor layer 224 Pixel electrode layer 225 Insulator layer 226 Sealing material 227 Insulator layer 228 Conductor layer 229 Counter substrate 230 Liquid crystal layer 231 Region 232 Wiring substrate 233 Switching TFT
234 Capacitance element 235 Connection wiring layer 240 Insulator layer 241 Opening 242 Opening 250 Gate electrode layer 251 Semiconductor layer 252 Insulating layer 253 Wiring layer 254 Common potential line 255 Common potential line 256 Flexible wiring board 257 Circuit board 258 Cold cathode tube 259 Light guide plate 260 TFT
261 Protection diode 262 Protection diode 270 Colored layer 271 Polarizing plate 272 Polarizing plate 273 Flexible wiring board 274 Circuit board 275 Cold cathode tube 301 Semiconductor layer 302 Mask 303 Semiconductor layer 304 Semiconductor layer 305 Source and drain wiring layer 306 Source and drain wiring layer 307 Semiconductor layer 308 Semiconductor layer 309 Semiconductor layer 310 Pixel electrode layer 311 Insulator layer 312 Sealing material 313 Alignment film 314 Counter electrode 315 Substrate 316 Liquid crystal layer 317 Connection terminal 401 Pixel portion 402 Signal line side drive circuit 403 Scan line side drive circuit 404 Tuner 405 Video signal amplification circuit 406 Video signal processing circuit 407 Control circuit 408 Signal division circuit 409 Audio signal amplification circuit 410 Audio signal processing circuit 411 Control circuit 412 Input unit 413 Speaker 500 Pal Output circuit 501 the buffer circuit 502 pixels 601 TFT
602 TFT
603 TFT
604 TFT
605 TFT
606 TFT
607 TFT
608 TFT
609 TFT
610 TFT
611 TFT
612 TFT
613 TFT
620 TFT
621 TFT
622 TFT
623 TFT
624 TFT
625 TFT
626 TFT
627 TFT
628 TFT
629 TFT
630 TFT
631 TFT
632 TFT
633 TFT
634 TFT
635 TFT
811 Resin 812 FPC
813 Wiring 814 Conductive particle 815 Resin 816 Adhesive 817 Wire 818 Sealing resin 1001 Substrate 1002 Pixel portion 1003 Drive circuit 1004 Drive circuit 1005 Substrate 1006 Tape 1007 Driver IC
1008 Substrate 1009 Tape 1010 Driver IC
1100 Ti film 1101 Activation region 1201 Connection wiring layer 1202 Connection wiring layer 1203 Connection wiring layer 1400 Substrate 1401 Droplet ejection means 1402 Imaging means 1403 Head 1404 Control means 1405 Storage medium 1406 Image processing means 1407 Computer 1408 Marker 2301 Module housing 2302 Speaker 2303 Display screen 2304 Speaker 2305 Operation switch 9001 Pixel electrode 9002 Semiconductor layer 9003 Semiconductor layer 9004 Source and drain wiring layer 9005 Source and drain wiring layer 9101 Semiconductor layer 9102 Semiconductor layer 9103 Source and drain wiring 9104 Source and drain wiring 9201 Source and drain Wiring layer 9202 Source and drain wiring layer 9203 Pixel electrode 9204 Semiconductor layer 9205 Mask 92 6 semiconductor layer 9207 a gate insulating film 9208 a gate insulating film 9209 pixel electrode 9210 mask 9301 pixel electrode 9302 source and drain wiring layer 9303 source and drain wiring layer 9304 semiconductor layer 9305 mask 9306 semiconductor layer 9307 a gate insulating film 9308 a gate insulating film

Claims (8)

Forming a first electrode on a substrate;
Forming a first insulating film so as to cover the first electrode;
Forming a second electrode on the first insulating film;
Forming a first semiconductor layer on the first insulating film and the second electrode;
Forming a second insulating film on the first semiconductor layer so as to overlap the first electrode;
Forming an n-type second semiconductor layer so as to cover the second insulating film;
Etching the first and second semiconductor layers;
On the second semiconductor layer, forming a third electrode, and a fourth electrode in contact with said second electrode,
Etching and separating the second semiconductor layer using the third and fourth electrodes as a mask,
At least one of the first to fourth electrodes is formed by a droplet discharge method. Forming first and second electrodes on a substrate;
Forming a third electrode so as to partially overlap the second electrode;
Forming an n-type first semiconductor layer on the first electrode, the second electrode, and the third electrode;
Separating the first semiconductor layer into a semiconductor layer in contact with the first electrode and a semiconductor layer in contact with the second electrode;
Forming a second semiconductor layer on the first semiconductor layer;
Forming an insulating film on the second semiconductor layer;
Forming a fourth electrode on the insulating film and on a region where the first semiconductor layer is separated;
Etching the second semiconductor layer and the insulating film;
At least one of the first to fourth electrodes is formed by a droplet discharge method. Forming a first electrode on a substrate;
Forming a second electrode and a third electrode partially overlapping the first electrode;
Forming an n-type first semiconductor layer on the first electrode, the second electrode, and the third electrode;
Separating the first semiconductor layer into a semiconductor layer in contact with the second electrode and a semiconductor layer in contact with the third electrode;
Forming a second semiconductor layer on the first semiconductor layer;
Forming an insulating film on the second semiconductor layer;
Forming a fourth electrode on the insulating film and on a region where the first semiconductor layer is separated;
Etching the second semiconductor layer and the insulating film;
At least one of the first to fourth electrodes is formed by a droplet discharge method. In any one of Claims 1 thru | or 3 ,
A method for manufacturing a display device, wherein a surface to be formed is pretreated before forming at least one of the first to fourth electrodes by a droplet discharge method. In claim 4 ,
The display is characterized in that as the pretreatment, a substance having a photocatalytic function is formed on the surface to be formed, and the substance having the photocatalytic function is selectively irradiated with light to make the surface to be formed hydrophilic. Device fabrication method. In claim 4 ,
As the pretreatment, a plasma treatment is performed on the surface to be formed to make the surface to be formed liquid-repellent. In any one of Claims 1 thru | or 6 ,
A method for manufacturing a display device, wherein the substrate is a substrate having an insulating surface. The method for manufacturing a display device, characterized in that the display device according to any one of claims 1 to 7 is a liquid crystal display device.

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