JP4666473B2 - 基板熱処理装置 - Google Patents
基板熱処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 252
- 238000010438 heat treatment Methods 0.000 title claims description 82
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 238000012545 processing Methods 0.000 claims description 32
- 230000005856 abnormality Effects 0.000 claims description 13
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000012546 transfer Methods 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/0084—Charging; Manipulation of SC or SC wafers
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description
すなわち、請求項1に記載の発明は、ベークプレートの上面に凸部を備え、ベークプレートに基板を載置して、基板の下面とベークプレートの上面との間に微小空間を形成した状態で基板に対する熱処理を行う基板熱処理装置において、前記ベークプレートの上面周縁部に備えられ、前記微小空間の側方を閉塞するとともに、基板の側方への移動を規制する規制部と、基板の下面に当接し、基板の外径より小径であって、前記規制部との間に空間をおいて配設された当接部とを備えたシール部と、前記微小空間の気体を排出するための排出孔とを備え、前記排出孔を介して前記微小空間の気体を排出した状態で、前記ベークプレートに載置された基板に熱処理を行うことを特徴とするものである。
図1は、実施例1に係る基板熱処理装置の概略構成を示す縦断面図であり、図2は、図1の平面図であり、図3は、ベークプレートを拡大した縦断面図である。
すなわち、ベークプレート1Aの上面、詳細には伝熱部5Aの上面のうちシール部25より内側が、中心部に向かって凹んだ凹部形状あるいは浅いすり鉢状を呈するように構成されている。基板Wの中央部が周辺部よりも下方に突出した反り(谷型反り)を有する場合には、中央部が先に吸引されて周辺部の吸引が不足する場合があるが、ベークプレート1Aの上面を凹部形状することにより、基板Wの周辺部を十分に吸引することができる。したがって、基板Wの反りにかかわらず基板Wの面内において均一な熱処理を行うことができる。なお、このようなベークプレート1Aを採用しても、中心部が上方へ突出した反り(山型反り)を有する基板Wであっても処理することができる。
すなわち、シール部25Aは、支持部21Aと規制部23とを備え、支持部21Aが当接部43と溝部45で構成されている。当接部43は、基板Wの外径よりやや小径の内径を有し、その上面が基板Wのうち外周よりやや内側の下面に当接する。溝部45は、当接部43より外側で基板Wの下面に非接触である。
基板Wを搬入する。エアシリンダ15を作動させて支持ピン7を上昇させ、基板Wを受け取る。
エアシリンダ15を非作動とし、作動軸を収縮させて支持ピン7を下降させる。これにより基板Wがベークプレート1Cに載置される。このとき図示しないセンサなどで支持ピン7が正常に降下したか否かをCPU39が判断し(ステップS3)、正常に降下するまで監視する(ステップS4)。
基板Wが載置されたのを確認した後、開閉弁63(第1バルブ)を開放し、CPU39は圧力計65の圧力が設定圧に到達したか否かを一定時間にわたり監視して処理を分岐する。つまり、基板Wが破損したり、シール部25が破損したりする等の障害が生じたことにより、微小空間msを設定圧にまで減圧できなかった場合と、障害が発生せずに設定圧にまで減圧できた場合とで処理を分岐する。
所定圧にまで減圧できた場合には、レシピに基づいて処理時間だけ待機して、基板Wに熱処理を施す。
処理時間に達すると、開閉弁57(第2バルブ)を開放する。これにより、微小空間ms及びこれに連通している排出配管29に窒素ガスが供給される。CPU39は、圧力計65の圧力を一定時間にわたって監視し、設定圧に達したか否かを判断して処理を分岐する。つまり、窒素ガスの供給系統などに不具合が生じて窒素ガスを十分に供給することができずに負圧を解消できなかった場合と、障害が発生せずに負圧を解消できた場合とで処理を分岐する。
設定圧に達して負圧が解消された場合には、開閉弁63(第1バルブ)を閉止して、排気動作を停止する。そして、CPU39は、圧力計65の圧力を一定時間にわたって監視し、設定圧に達したか否かを判断して処理を分岐する。つまり、排気系統の開閉弁63を閉じたので、窒素ガスの供給により微小空間ms及びこれに連通している部分において圧力が高まったか否かを一定時間にわたって監視し、その結果に応じて処理を分岐する。このように負圧を解消するために窒素ガスを供給するので、例えば、基板Wの下面周縁部が支持部21に張り付いてしまった場合であっても、基板Wを支持ピン7で容易に上昇させることができる。
設定圧に達した後、CPU39は、開閉弁57を閉止して窒素ガスの供給を停止するとともに、エアシリンダ15を作動させて支持ピン7を上昇させる。CPU39は、図示しないセンサなどにより支持ピン9が正常に上昇したか否かを一定時間にわたって監視し、その結果に応じて処理を分岐する。
すなわち、排出配管29のうち、圧力計65と開閉弁63との間で排出配管67が分岐して設けられている。この排出配管67には、開閉弁69と、流量調整弁71と、圧力計73とが配設されている。流量調整弁71は、流量調整弁35よりも大流量(排気圧力が高い)となるように予め設定されている。開閉弁63,69をCPU39が時間をおいて切り替えることにより、以下に説明するように排出圧を二段階に切り替えることができるようになっている。
開閉弁69(第0バルブ)を開放し、比較的高い圧力で微小空間ms内の気体を排出する。そして、圧力計65の圧力が設定圧に達したか否かを判断し、達した場合にはステップS53へ移行し、達しない場合にはステップS7以降に分岐する。
開閉弁69(第0バルブ)を閉止するとともに、開閉弁63(第1バルブ)を開放する。これにより、開閉弁69を開放したときよりも低い排気圧力で排気を開始する。これ以降の処理は、上述した実施例6における動作説明と同じである。
すなわち、排出圧が大きいほど基板Wに作用する吸引力が大きくなるが、大流量の気体の流れによりベークプレート1の熱分布を不均一にする恐れがある。一方、基板Wの周辺部が中央部よりも上方に反っている場合には、シール部25と基板Wの周辺部との隙間が大きいので、排出圧を大きくしないと周辺部を十分に吸引できない恐れがある。そこで、排出初期の排出圧を、その後の定常時の排出圧より大きくすることにより、基板Wの中央部が下方に突出するような反りがある基板Wも確実に吸引することができつつも、ベークプレート1の熱分布に悪影響を与えないようにできる。
1 … ベークプレート
3 … 発熱体
5 … 伝熱部
7 … 貫通孔
9 … 支持ピン
19 … 球体
ms … 微小空間
21 … 支持部
23 … 規制部
25 … シール部
27 … 排出孔
29 … 排出配管
31 … 真空吸引源
33 … 開閉弁
Claims (14)
- ベークプレートの上面に凸部を備え、ベークプレートに基板を載置して、基板の下面とベークプレートの上面との間に微小空間を形成した状態で基板に対する熱処理を行う基板熱処理装置において、
前記ベークプレートの上面周縁部に備えられ、前記微小空間の側方を閉塞するとともに、基板の側方への移動を規制する規制部と、基板の下面に当接し、基板の外径より小径であって、前記規制部との間に空間をおいて配設された当接部とを備えたシール部と、
前記微小空間の気体を排出するための排出孔とを備え、
前記排出孔を介して前記微小空間の気体を排出した状態で、前記ベークプレートに載置された基板に熱処理を行うことを特徴とする基板熱処理装置。 - 請求項1に記載の基板熱処理装置において、
前記排出孔は、前記ベークプレートの上面に開口していることを特徴とする基板熱処理装置。 - 請求項2に記載の基板熱処理装置において、
前記排出孔は、前記ベークプレートの中心部よりも前記シール部側に形成されていることを特徴とする基板熱処理装置。 - 請求項1から3のいずれかに記載の基板熱処理装置において、
前記ベークプレートは、その上面が下方に凹んだ凹部形状を呈することを特徴とする基板熱処理装置。 - 請求項1から4のいずれかに記載の基板熱処理装置において、
前記シール部は、前記規制部と前記当接部との間に、前記当接部より外側で基板の下面に非接触である溝部を備えていることを特徴とする基板熱処理装置。 - 請求項1から5のいずれかに記載の基板熱処理装置において、
前記微小空間に気体を供給するための供給孔を備え、
基板に対する熱処理を終えた後、前記供給孔から気体を供給するとともに前記排出孔からの排出を停止することを特徴とする基板熱処理装置。 - 請求項1から6のいずれかに記載の基板熱処理装置において、
前記排出孔の排出圧を検出する排出圧検出手段と、
前記排出圧検出手段から得られた排出圧に基づき、排出系に異常があるか否かを判断する判断手段と、
前記判断手段が異常ありと判断した場合には、異常を報知する報知手段と、
をさらに備えていることを特徴とする基板熱処理装置。 - 請求項1から7のいずれかに記載の基板熱処理装置において、
前記排出孔からの排出圧を切り替え可能に構成され、前記微小空間内の排出初期の排出圧を、その後の定常時の排出圧よりも大きく切り替える切替手段と、
をさらに備えていることを特徴とする基板熱処理装置。 - ベークプレートの上面に凸部を備え、ベークプレートに基板を載置して、基板の下面に微小空間を形成した状態で基板に対する熱処理を行う基板処理装置において、
前記ベークプレートの上面外周部に備えられ、前記微小空間の側方を閉塞するとともに、基板の側方への移動を規制する規制部と、基板の下面に当接し、基板の外径より小径であって、前記規制部との間に空間をおいて配設された当接部とを備えたシール部と、
前記ベークプレートの上面のうち前記シール部材より中心側に配設された多孔質部材と、
前記微小空間の気体を排出するため、前記多孔質部材に連通接続された排出孔とを備え、
前記排出孔を介して前記微小空間の気体を排出した状態で、前記ベークプレートに載置された基板に熱処理を行うことを特徴とする基板熱処理装置。 - 請求項9に記載の基板熱処理装置において、
前記ベークプレートは、その上面が下方に凹んだ凹部形状を呈することを特徴とする基板熱処理装置。 - 請求項9または10に記載の基板熱処理装置において、
前記シール部は、前記規制部と前記当接部との間に、前記当接部より外側で基板の下面に非接触である溝部を備えていることを特徴とする基板熱処理装置。 - 請求項9から11のいずれかに記載の基板熱処理装置において、
前記微小空間に気体を供給するための供給孔を備え、
基板に対する熱処理を終えた後、前記供給孔から気体を供給するとともに前記排出孔からの排出を停止することを特徴とする基板熱処理装置。 - 請求項9から12のいずれかに記載の基板熱処理装置において、
前記排出孔の排出圧を検出する排出圧検出手段と、
前記排出圧検出手段から得られた排出圧に基づき、排出系に異常があるか否かを判断する判断手段と、
前記判断手段が異常ありと判断した場合には、異常を報知する報知手段と、
をさらに備えていることを特徴とする基板熱処理装置。 - 請求項9から13のいずれかに記載の基板熱処理装置において、
前記排出孔からの排出圧を切り替え可能に構成され、前記微小空間内の排出初期の排出圧を、その後の定常時の排出圧よりも大きく切り替える切替手段と、
をさらに備えていることを特徴とする基板熱処理装置。
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TW200735219A (en) | 2007-09-16 |
KR20060117249A (ko) | 2006-11-16 |
KR100750630B1 (ko) | 2007-08-20 |
CN100536074C (zh) | 2009-09-02 |
JP2006319093A (ja) | 2006-11-24 |
CN1862204A (zh) | 2006-11-15 |
US20060289432A1 (en) | 2006-12-28 |
TWI307926B (en) | 2009-03-21 |
US7432476B2 (en) | 2008-10-07 |
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