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JP4663593B2 - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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JP4663593B2
JP4663593B2 JP2006176754A JP2006176754A JP4663593B2 JP 4663593 B2 JP4663593 B2 JP 4663593B2 JP 2006176754 A JP2006176754 A JP 2006176754A JP 2006176754 A JP2006176754 A JP 2006176754A JP 4663593 B2 JP4663593 B2 JP 4663593B2
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liquid crystal
crystal display
display device
signal line
floating metal
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JP2008008965A (en
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和由 永山
伸一 木村
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エルジー ディスプレイ カンパニー リミテッド
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)

Description

本発明は、Ｓ−ＩＰＳ方式の液晶表示装置に関するもので、特に、開口率の向上を図るものである。   The present invention relates to an S-IPS liquid crystal display device, and in particular, to improve the aperture ratio.

従来、映像信号線上にシールド電極を設け、一対の基板の基板面に略平行な電解を発生さえる一対の電極の一方と走査信号線の少なくとも１つ以上とシールド電極がオーバラップする領域を設けることで、基板上に形成した映像信号線からのノイズ電界によるクロストークを防止するものがある（例えば、特許文献１参照）。   Conventionally, a shield electrode is provided on a video signal line, and a region where the shield electrode overlaps with one of the pair of electrodes capable of generating electrolysis substantially parallel to the substrate surface of the pair of substrates and at least one of the scanning signal lines is provided. There is one that prevents crosstalk due to a noise electric field from a video signal line formed on a substrate (see, for example, Patent Document 1).

また、従来、クロストーク対策のため、カラーフィルタのブラックマトリクスの幅を広く取るようにしたものがある。すなわち、例えば、コモン線と信号線との間を抜けてくる光がクロストークとなるので、このクロストークが見えなくなる範囲までブラックマトリクスの幅を大きくする。   Conventionally, as a countermeasure against crosstalk, there is one in which the width of the black matrix of the color filter is widened. That is, for example, light that passes through between the common line and the signal line becomes crosstalk. Therefore, the width of the black matrix is increased to a range where the crosstalk becomes invisible.

特開平１１−２４１０４号公報Japanese Patent Laid-Open No. 11-24104

しかしながら、クロストーク対策のためブラックマトリクスの幅を大きくする場合、Ｓ−ＩＰＳの開口率は小さくなるという問題があった。   However, when the width of the black matrix is increased to prevent crosstalk, there is a problem that the aperture ratio of S-IPS is reduced.

そこで、本発明は上述した点に鑑みてなされたもので、クロストークを防止でき、かつＳ−ＩＰＳの開口率を向上させることができる液晶表示装置を提供することを目的とする。   Therefore, the present invention has been made in view of the above points, and an object of the present invention is to provide a liquid crystal display device that can prevent crosstalk and improve the aperture ratio of S-IPS.

上記目的を達成するために、本発明に係る液晶表示装置は、電極がく字状に形成され電場により回転される液晶分子の配向分布が対称である２つの領域を有するＳ−ＩＰＳ方式の液晶表示装置において、ＴＦＴが設けられるＴＦＴ側基板上に、隣接する画素コモン電極間に設けられた信号線と画素コモン電極との間を抜けてクロストークの元となる光を遮光する遮光層としてのフローティングメタルを設け、前記信号線と交差する部分の前記フローティングメタルに切り込み形のくびれが設けられて、前記信号線が前記フローティングメタルを乗り越えるときの交差部分の長さを長くして前記信号線の断線を軽減することを特徴とするものである。

In order to achieve the above object, the liquid crystal display device according to the present invention is an S-IPS liquid crystal display having two regions in which the orientation distribution of liquid crystal molecules rotated in an electric field is symmetrical. In the device, a floating layer serving as a light shielding layer that shields light that causes crosstalk by passing between a signal line provided between adjacent pixel common electrodes and the pixel common electrode on a TFT side substrate on which a TFT is provided. A metal is provided , and a cut-out constriction is provided in the floating metal at a portion intersecting with the signal line, and the length of the intersecting portion when the signal line gets over the floating metal is increased to break the signal line. It is characterized by reducing .

本発明によれば、ＴＦＴ側基板の信号線とコモン線との間に、遮光層としてのフローティングメタルを設けることで、クロストークを防止でき、かつＳ−ＩＰＳの開口率を向上させることができる。   According to the present invention, by providing a floating metal as a light shielding layer between the signal line and the common line of the TFT side substrate, crosstalk can be prevented and the aperture ratio of S-IPS can be improved. .

実施の形態１．
図１は、本発明の実施の形態１に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、同図（ａ）は画素の平面図、図（ｂ）は（ａ）のＢ−Ｂ’線断面図である。なお、同図（ａ）に示す平面構造の１層目から４層目までの平面構造については図４乃至図７を参照して後述する。 Embodiment 1 FIG.
FIG. 1 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to Embodiment 1 of the present invention. FIG. 1 (a) is a plan view of a pixel, and FIG. It is BB 'sectional view taken on the line of (a). The planar structure from the first layer to the fourth layer of the planar structure shown in FIG. 4A will be described later with reference to FIGS.

図１に示すように、カラーフィルタ側基板１０上には、カラーフィルタのＲ着色層１１Ｒ及びＧ着色層１１Ｇと、ブラックマトリクス１２が設けられている。また、このカラーフィルタ側基板１０と対向配置されるＴＦＴ側基板２０上には、フローティングメタルでなるゲート線２１’、絶縁膜２２、信号線２３、絶縁膜２４、画素コモンＩＴＯ電極３１が設けられている。   As shown in FIG. 1, an R colored layer 11R and a G colored layer 11G of a color filter, and a black matrix 12 are provided on the color filter side substrate 10. Further, a gate line 21 ′ made of a floating metal, an insulating film 22, a signal line 23, an insulating film 24, and a pixel common ITO electrode 31 are provided on the TFT side substrate 20 disposed to face the color filter side substrate 10. ing.

ここで、ゲート線２１’としてのフローティングメタルは、信号線２３と画素コモンＩＴＯ電極３１との間に設けられて、クロストークの元となる光を遮光する遮光層を形成する。このゲート線２１’は、フローティングなので、信号線２３と重なっていても負荷容量は増えない。また、フローティングなので、図１（ａ）に図示する間隔のように、遮光することのできない場所が存在する。この部分は、画素コモンＩＴＯ電極３１でシールドすることによりクロストーク対策をする。   Here, the floating metal as the gate line 21 ′ is provided between the signal line 23 and the pixel common ITO electrode 31, and forms a light shielding layer that shields light that causes crosstalk. Since the gate line 21 ′ is floating, the load capacity does not increase even if it overlaps with the signal line 23. In addition, since it is floating, there is a place where light cannot be shielded, such as the interval shown in FIG. This portion is shielded by the pixel common ITO electrode 31 to take measures against crosstalk.

従って、実施の形態１によれば、ＴＦＴが設けられる基板２０側の信号線２３と画素コモンＩＴＯ電極３１との間に、フローティングメタルの遮光層を設けたので、クロストークを防止でき、ブラックマトリクス１２の幅を狭めることができることになるので、Ｓ−ＩＰＳの開口率を向上させることができる。   Therefore, according to the first embodiment, since the floating metal light-shielding layer is provided between the signal line 23 on the substrate 20 side on which the TFT is provided and the pixel common ITO electrode 31, crosstalk can be prevented, and the black matrix can be prevented. Since the width of 12 can be narrowed, the aperture ratio of S-IPS can be improved.

また、フローティングメタルの遮光層としてのゲート線２１’で遮光されてない部分は、画素コモンＩＴＯ電極３１でシールドし覆うようにして遮光することにより、ゲート線２１’で遮光することのできない部分をも遮光することができ、クロストーク対策を高めることができる。   Further, the portion that is not shielded by the gate line 21 ′ as the light shielding layer of the floating metal is shielded by the pixel common ITO electrode 31 so as to be shielded, and thus the portion that cannot be shielded by the gate line 21 ′. Can also be shielded from light, and measures against crosstalk can be enhanced.

実施の形態２．
図２は、本発明の実施の形態２に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、同図（ａ）は画素の平面図、図（ｂ）は平面構造のカラーフィルタのブラックマトリクスパターンを示す図である。 Embodiment 2. FIG.
FIG. 2 is a structural diagram for explaining a dual-domain S-IPS liquid crystal display device according to Embodiment 2 of the present invention. FIG. 2 (a) is a plan view of a pixel, and FIG. It is a figure which shows the black matrix pattern of the color filter of a planar structure.

図２（ａ）は、図１（ａ）に対し、ゲート線２１’としてのフローティングメタルで遮光していない部分を画素コモンＩＴＯ電極３１で遮光していない平面構造を示し、このような構造に対し、実施の形態２では、図２（ｂ）に示すように、フローティングメタルの遮光層で遮光されてない部分（図示点線部分）は、カラーフィルタ側基板２０に設けられるブラックマトリクス１２を大きくして隠すことで遮光するようにしている。   FIG. 2A shows a planar structure in which a portion not shielded by the floating metal as the gate line 21 ′ is not shielded by the pixel common ITO electrode 31 as compared with FIG. On the other hand, in the second embodiment, as shown in FIG. 2B, the black matrix 12 provided on the color filter side substrate 20 is enlarged in the portion not shaded by the floating metal shading layer (dotted line portion in the figure). The light is shielded by hiding.

従って、実施の形態２によれば、フローティングメタルの遮光層としてのゲート線２１’で遮光されてない部分は、カラーフィルタ側基板２０に設けられるブラックマトリクス１２を大きくして隠すことで遮光することにより、クロストーク対策を高めることができる。   Therefore, according to the second embodiment, the portion that is not shielded by the gate line 21 ′ as the light shielding layer of the floating metal is shielded by enlarging the black matrix 12 provided on the color filter side substrate 20 and hiding it. Therefore, it is possible to improve the crosstalk countermeasure.

実施の形態３．
図３は、本発明の実施の形態３に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、同図（ａ）は画素の平面図、図（ｂ）は（ａ）のＣ−Ｃ’線断面図である。 Embodiment 3 FIG.
3A and 3B are structural diagrams for explaining a dual domain S-IPS liquid crystal display device according to Embodiment 3 of the present invention, in which FIG. 3A is a plan view of a pixel, and FIG. It is CC 'sectional view taken on the line of (a).

図３に示す実施の形態３では、図１に示す実施の形態１の信号線２３と画素コモンＩＴＯ電極３１との間に設けられた２つのフローティングメタルでなるゲート線２１’による遮光層を１つにして、隣接する画素コモンＩＴＯ電極３１の周辺を覆い、かつ信号線２３下に敷き詰めるようにして、フローティングメタルでなるゲート線２１’による遮光層を形成している。   In the third embodiment shown in FIG. 3, a light shielding layer is formed by a gate line 21 ′ made of two floating metals provided between the signal line 23 and the pixel common ITO electrode 31 in the first embodiment shown in FIG. In addition, a light shielding layer is formed by a gate line 21 ′ made of a floating metal so as to cover the periphery of the adjacent pixel common ITO electrode 31 and to spread under the signal line 23.

すなわち、図１に示す実施の形態１では、信号線２３の両側に２つフローティングメタルでなるゲート線２１’による遮光層で遮光するようにしたが、これは、信号線２３の断線対策になるためのものである。信号線２３の断線がプロセスの最適化により問題とならない場合は、図３に示すように、信号線２３下に敷き詰めることができる。   That is, in the first embodiment shown in FIG. 1, light is shielded by the light shielding layer by the two gate lines 21 ′ made of floating metal on both sides of the signal line 23, but this is a measure against disconnection of the signal line 23. Is for. When the disconnection of the signal line 23 does not cause a problem due to the optimization of the process, it can be spread under the signal line 23 as shown in FIG.

従って、実施の形態３によれば、隣接する画素コモンＩＴＯ電極３１の周辺を覆い、かつ信号線２３下に敷き詰めるようにして、フローティングメタルでなるゲート線２１’による遮光層を形成することで、実施の形態１に比してさらに開口率を高めることができる。   Therefore, according to the third embodiment, by forming the light shielding layer by the gate line 21 ′ made of a floating metal so as to cover the periphery of the adjacent pixel common ITO electrode 31 and lay down under the signal line 23, The aperture ratio can be further increased as compared with the first embodiment.

なお、上述した実施の形態１乃至３における各層（１層から４層）毎の平面構造を図４乃至図７を参照して説明する。
図４は、１層目の平面構造の説明図である。太線部分はゲートレイヤであり、ゲート線２１とコモン線２５とフローティングメタルでなるゲート線２１’が形成される。 The planar structure of each layer (1 to 4 layers) in the above-described first to third embodiments will be described with reference to FIGS.
FIG. 4 is an explanatory diagram of the planar structure of the first layer. A thick line portion is a gate layer, and a gate line 21, a common line 25, and a gate line 21 ′ made of a floating metal are formed.

図５は、２層目の平面構造の説明図である。太線部分は信号線とチャネルのレイヤであり、信号線２３、ＴＦＴのチャネル部分２7、コモン線２５と重なる部分に負荷容量２６が形成される。   FIG. 5 is an explanatory diagram of the planar structure of the second layer. A thick line portion is a layer of a signal line and a channel, and a load capacitor 26 is formed in a portion overlapping the signal line 23, the channel portion 2 7 of the TFT, and the common line 25.

図６は、３層目の平面構造の説明図である。太線部分はコンタクトホールのレイヤであり、画素ＩＴＯ電極を画素電極と繋げるためのコンタクトホール２８、コモン線と画素コモンＩＴＯを繋げるためのコンタクトホール２９が形成される。   FIG. 6 is an explanatory diagram of the planar structure of the third layer. The thick line portion is a contact hole layer, and a contact hole 28 for connecting the pixel ITO electrode to the pixel electrode and a contact hole 29 for connecting the common line and the pixel common ITO are formed.

図７は、４層目の平面構造の説明図である。画素ＩＴＯ電極３０、画素コモンＩＴＯ電極３１が形成される。画素ＩＴＯ電極３０とコモン線２５の重なる部分も負荷容量となる。   FIG. 7 is an explanatory diagram of the planar structure of the fourth layer. A pixel ITO electrode 30 and a pixel common ITO electrode 31 are formed. The overlapping portion of the pixel ITO electrode 30 and the common line 25 also becomes a load capacity.

実施の形態４．
図８は、本発明の実施の形態４に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、画素の平面図を示している。 Embodiment 4 FIG.
FIG. 8 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to the fourth embodiment of the present invention, and shows a plan view of a pixel.

上述した実施の形態では、信号線とコモン線との間に、フローティングメタルの遮光層を設けたものであるが、遮光のための金属をフローティングにしていても、フローティングが同時にゲート線とコモン線でショートしてしまうと、ゲートとコモン線でショートしてしまう。図８に示す実施の形態４では、これを防止するために、丸枠部分のように、フローティングにスリット３２を入れている。このスリット３２の部分にもＩＴＯで被覆することによりクロストーク対策できる。   In the above-described embodiment, a floating metal light-shielding layer is provided between the signal line and the common line. However, even if the light-shielding metal is floating, the floating is simultaneously performed by the gate line and the common line. If it is short-circuited, it will be short-circuited by the gate and common line. In the fourth embodiment shown in FIG. 8, in order to prevent this, a slit 32 is put in a floating state like a round frame portion. A crosstalk countermeasure can be taken by covering the slit 32 with ITO.

従って、実施の形態４によれば、フローティングメタルの遮光層に、スリット３２を設けることで、ゲート線とコモン線でショートすることを防止でき、クロストーク対策できる。   Therefore, according to the fourth embodiment, by providing the slit 32 in the light shielding layer of the floating metal, it is possible to prevent a short circuit between the gate line and the common line, and to take measures against crosstalk.

実施の形態５．
図９は、本発明の実施の形態５に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、画素の平面図を示している。 Embodiment 5. FIG.
FIG. 9 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to the fifth embodiment of the present invention, and shows a plan view of a pixel.

図３に示す実施の形態３のように、信号線２３の下にベタでフローティングメタルを敷く場合は、信号線２３の断線のリスクが生じる。これは、信号線２３がフローティングメタルを乗り越えるときの交差部分の長さを長くしてやるとそのリスクは減る。図９に示す実施の形態５では、断線のリスクを軽減するために、丸枠部分のように、フローティングメタルにくびれ３３を入れることで、交差部分の長さを長くでき、信号線２３の断線のリスク対策とすることができる。   As in the third embodiment shown in FIG. 3, when a solid floating metal is laid under the signal line 23, there is a risk of disconnection of the signal line 23. The risk is reduced if the length of the intersection when the signal line 23 gets over the floating metal is increased. In the fifth embodiment shown in FIG. 9, in order to reduce the risk of disconnection, the length of the intersection can be increased by inserting the constriction 33 in the floating metal like a round frame portion, and the signal line 23 is disconnected. Risk countermeasures.

従って、実施の形態５によれば、フローティングメタルに、くびれ３３を設けることで、交差する信号線２３の断線のリスクを軽減でき、断線のリスク対策とすることができる。   Therefore, according to the fifth embodiment, by providing the constriction 33 in the floating metal, it is possible to reduce the risk of disconnection of the intersecting signal lines 23 and to take measures against the risk of disconnection.

本発明の実施の形態１に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、（ａ）は画素の平面図、図（ｂ）は（ａ）のＢ−Ｂ’線断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural diagram for explaining a dual-domain S-IPS liquid crystal display device according to a first embodiment of the present invention, where (a) is a plan view of a pixel and FIG. It is B 'sectional view. 本発明の実施の形態２に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、（ａ）は画素の平面図、（ｂ）は平面構造のカラーフィルタのブラックマトリクスパターンを示す図である。FIG. 4 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to a second embodiment of the present invention, where (a) is a plan view of a pixel and (b) is a black color filter having a planar structure. It is a figure which shows a matrix pattern. 本発明の実施の形態３に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、（ａ）は画素の平面図、（ｂ）は（ａ）のＣ−Ｃ’線断面図である。It is a structural diagram for demonstrating the dual domain S-IPS liquid crystal display device which concerns on Embodiment 3 of this invention, (a) is a top view of a pixel, (b) is CC of (a). FIG. 本発明の実施の形態１乃至３に係るＳ−ＩＰＳ方式の液晶表示装置の各層毎の平面構造を示すもので、１層目の平面構造の説明図である。FIG. 5 is a diagram illustrating a planar structure of each layer of the S-IPS liquid crystal display device according to the first to third embodiments of the present invention, and is an explanatory diagram of the planar structure of the first layer. 本発明の実施の形態１乃至３に係るＳ−ＩＰＳ方式の液晶表示装置の各層毎の平面構造を示すもので、２層目の平面構造の説明図である。FIG. 5 is a diagram illustrating a planar structure of each layer of the S-IPS liquid crystal display device according to the first to third embodiments of the present invention, and is an explanatory diagram of the planar structure of the second layer. 本発明の実施の形態１乃至３に係るＳ−ＩＰＳ方式の液晶表示装置の各層毎の平面構造を示すもので、３層目の平面構造の説明図である。FIG. 5 is a diagram illustrating a planar structure of each layer of the S-IPS liquid crystal display device according to the first to third embodiments of the present invention, and is an explanatory diagram of the planar structure of the third layer. 本発明の実施の形態１乃至３に係るＳ−ＩＰＳ方式の液晶表示装置の各層毎の平面構造を示すもので、４層目の平面構造の説明図である。FIG. 5 is a diagram illustrating a planar structure of each layer of the S-IPS liquid crystal display device according to the first to third embodiments of the present invention, and is an explanatory diagram of the planar structure of the fourth layer. 本発明の実施の形態４に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、画素の平面図を示している。FIG. 9 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to a fourth embodiment of the present invention, and shows a plan view of a pixel; 本発明の実施の形態５に係るデュアルドメインのＳ−ＩＰＳ方式の液晶表示装置を説明するための構造図であり、画素の平面図を示している。FIG. 10 is a structural diagram for explaining a dual domain S-IPS liquid crystal display device according to a fifth embodiment of the present invention, and is a plan view of a pixel;

符号の説明Explanation of symbols

１０ カラーフィルタ側基板、１１Ｒ及び１１Ｇ カラーフィルタのＲ着色層及びＧ着色層、１２ ブラックマトリクス、２０ ＴＦＴ側基板、２１ ゲート線，２１’ フローティングメタルでなるゲート線、２２ 絶縁膜、２３ 信号線、２４ 絶縁膜、２５ コモン線、２６ ＴＦＴのチャネル部分、２７ コモン線２５上の負荷容量、２８，２９ コンタクトホール、３０ 画素ＩＴＯ電極、３１ 画素コモンＩＴＯ電極、３２ スリット、３３ くびれ。
10 color filter side substrate, 11R and 11G color filter R colored layer and G colored layer, 12 black matrix, 20 TFT side substrate, 21 gate line, 21 ′ gate line made of floating metal, 22 insulating film, 23 signal line, 24 insulating film, 25 common line, 26 TFT channel part, 27 load capacity on common line 25, 28, 29 contact hole, 30 pixel ITO electrode, 31 pixel common ITO electrode, 32 slit, 33 constriction.

Claims (3)

電極がく字状に形成され電場により回転される液晶分子の配向分布が対称である２つの領域を有するＳ−ＩＰＳ方式の液晶表示装置において、
ＴＦＴが設けられるＴＦＴ側基板上に、隣接する画素コモン電極間に設けられた信号線と画素コモン電極との間を抜けてクロストークの元となる光を遮光する遮光層としてのフローティングメタルを設け、
前記信号線と交差する部分の前記フローティングメタルに切り込み形のくびれが設けられて、前記信号線が前記フローティングメタルを乗り越えるときの交差部分の長さを長くして前記信号線の断線を軽減する
ことを特徴とする液晶表示装置。 In an S-IPS type liquid crystal display device having two regions in which the electrodes are formed in a square shape and the orientation distribution of liquid crystal molecules rotated by an electric field is symmetric ,
On the TFT side substrate where the TFT is provided, a floating metal is provided as a light shielding layer that shields light that causes crosstalk through the signal line between the pixel common electrode and the pixel common electrode. ,
A cut-out constriction is provided in the floating metal at a portion intersecting with the signal line, and the length of the intersecting portion when the signal line gets over the floating metal is lengthened to reduce disconnection of the signal line. A liquid crystal display device. 請求項１に記載の液晶表示装置において、
前記フローティングメタルで遮光されてない部分は、前記ＴＦＴ側基板と対向するカラーフィルタ側基板に設けられるブラックマトリクスの幅を大きくして隠すことで遮光する
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
The liquid crystal display device, wherein the portion not shielded from light by the floating metal is shielded by enlarging the width of a black matrix provided on the color filter side substrate facing the TFT side substrate. 請求項１に記載の液晶表示装置において、
前記フローティングメタルは、隣接する画素コモン電極間を覆う幅を有し、かつ信号線下に形成された
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
The liquid crystal display device, wherein the floating metal has a width that covers between adjacent pixel common electrodes and is formed under a signal line.
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