JP4645233B2 - 弾性表面波装置 - Google Patents
弾性表面波装置 Download PDFInfo
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- JP4645233B2 JP4645233B2 JP2005058549A JP2005058549A JP4645233B2 JP 4645233 B2 JP4645233 B2 JP 4645233B2 JP 2005058549 A JP2005058549 A JP 2005058549A JP 2005058549 A JP2005058549 A JP 2005058549A JP 4645233 B2 JP4645233 B2 JP 4645233B2
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- acoustic wave
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- mounting substrate
- wave element
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- 238000010897 surface acoustic wave method Methods 0.000 title claims description 87
- 229920005989 resin Polymers 0.000 claims description 103
- 239000011347 resin Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 19
- 239000000945 filler Substances 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05573—Single external layer
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
以下、実施の形態1を用いて、本発明における弾性表面波装置について、図面を参照しながら説明する。
以下、実施の形態2を用いて、本発明について説明する。実施の形態1にかかる発明では弾性表面波素子と実装基板にはさまれた空間には封止樹脂が入っていないのに対して、本実施の形態2にかかる発明では、弾性表面波素子と実装基板にはさまれた空間の一部に第1の樹脂および第2の樹脂が入り込んでいる点で実施の形態1と相違する。
12b PAD電極
13 実装基板
14a、14b PAD電極
17 バンプ
20 振動空間
21 封止樹脂
21a 第1の樹脂
21b 第2の樹脂
21c 第3の樹脂
Claims (6)
- 弾性表面波素子と実装基板とが、前記弾性表面波素子の励振部の面と前記実装基板の上面とが対面するように配置され、両者のパッド電極が電気的に接続されるようにバンプで固定され、前記弾性表面波素子の励振部と前記実装基板との間に振動空間が確保された形で前記弾性表面波素子を覆うように前記実装基板の上面が封止樹脂で封止された構成を有する弾性表面波装置であって、前記封止樹脂は、前記弾性表面波素子の裏面および側面および前記実装基板の上面の少なくとも一部を覆う第1の樹脂と、少なくとも第1の樹脂を覆う第2の樹脂と、少なくとも第2の樹脂を覆う第3の樹脂との少なくとも3層構造からなり、第2の樹脂は第3の樹脂よりも弾性率が大きく、かつ第1の樹脂は第3の樹脂よりも弾性率が小さい弾性表面波装置。
- 弾性表面波素子側面に接する第1の樹脂の厚さは、前記弾性表面波素子と実装基板との間の空間の高さの1/10〜1/2である請求項1記載の弾性表面波装置。
- 弾性表面波素子と実装基板にはさまれた空間の一部に少なくとも第2の樹脂が存在する請求項1記載の弾性表面波装置。
- 第2の樹脂の中にフィラーが含まれている請求項3記載の弾性表面波装置。
- フィラーには、弾性表面波素子と実装基板との間の空間の高さの40%以上の直径を持つフィラーが含まれている請求項4記載の弾性表面波装置。
- 第2の樹脂および第3の樹脂は、実装基板に接していない請求項1記載の弾性表面波装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005058549A JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
US10/594,333 US7474175B2 (en) | 2005-03-03 | 2006-02-27 | Surface acoustic wave device |
PCT/JP2006/303570 WO2006093078A1 (ja) | 2005-03-03 | 2006-02-27 | 弾性表面波装置 |
EP06714707A EP1744453B1 (en) | 2005-03-03 | 2006-02-27 | Surface acoustic wave device |
DE602006002442T DE602006002442D1 (de) | 2005-03-03 | 2006-02-27 | Akustische oberflächenwellenvorrichtung |
CN2006800001807A CN1943111B (zh) | 2005-03-03 | 2006-02-27 | 弹性表面波装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005058549A JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006245989A JP2006245989A (ja) | 2006-09-14 |
JP4645233B2 true JP4645233B2 (ja) | 2011-03-09 |
Family
ID=36941107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005058549A Active JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7474175B2 (ja) |
EP (1) | EP1744453B1 (ja) |
JP (1) | JP4645233B2 (ja) |
CN (1) | CN1943111B (ja) |
DE (1) | DE602006002442D1 (ja) |
WO (1) | WO2006093078A1 (ja) |
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JP5117083B2 (ja) * | 2007-03-09 | 2013-01-09 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法 |
JP5143451B2 (ja) * | 2007-03-15 | 2013-02-13 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP5543086B2 (ja) * | 2008-06-25 | 2014-07-09 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
JP5686943B2 (ja) * | 2008-09-17 | 2015-03-18 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
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JP4947156B2 (ja) * | 2010-01-20 | 2012-06-06 | 株式会社村田製作所 | 弾性波デュプレクサ |
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JP6743830B2 (ja) * | 2015-12-11 | 2020-08-19 | 株式会社村田製作所 | 弾性波装置 |
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WO2018235876A1 (ja) * | 2017-06-23 | 2018-12-27 | 株式会社村田製作所 | 弾性波装置、フロントエンド回路及び通信装置 |
US12113029B2 (en) * | 2019-04-05 | 2024-10-08 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
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WO2021100506A1 (ja) * | 2019-11-21 | 2021-05-27 | 株式会社村田製作所 | 電子部品 |
US11605571B2 (en) * | 2020-05-29 | 2023-03-14 | Qualcomm Incorporated | Package comprising a substrate, an integrated device, and an encapsulation layer with undercut |
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JP2000100997A (ja) * | 1998-09-17 | 2000-04-07 | Mitsubishi Electric Corp | 樹脂封止型半導体装置およびその樹脂封止方法 |
JP2001237351A (ja) * | 2000-02-22 | 2001-08-31 | Hitachi Maxell Ltd | 半導体装置 |
JP2004327623A (ja) * | 2003-04-23 | 2004-11-18 | Three M Innovative Properties Co | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
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JPH0468002A (ja) * | 1990-07-09 | 1992-03-03 | Asahi Chem Ind Co Ltd | ジアセチレン含有ポリマーとその架橋体 |
JP3369016B2 (ja) * | 1993-12-27 | 2003-01-20 | 三井化学株式会社 | 放熱板付リードフレーム及びそれを用いた半導体装置 |
JPH08204497A (ja) | 1995-01-26 | 1996-08-09 | Murata Mfg Co Ltd | 弾性表面波装置 |
US6262513B1 (en) * | 1995-06-30 | 2001-07-17 | Kabushiki Kaisha Toshiba | Electronic component and method of production thereof |
JPH10163605A (ja) * | 1996-11-27 | 1998-06-19 | Sony Corp | 電子回路装置 |
JP3514361B2 (ja) * | 1998-02-27 | 2004-03-31 | Tdk株式会社 | チップ素子及びチップ素子の製造方法 |
JP4666703B2 (ja) * | 1999-10-12 | 2011-04-06 | 旭化成イーマテリアルズ株式会社 | 半導体装置及びその材料 |
JP3376994B2 (ja) * | 2000-06-27 | 2003-02-17 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
US6914367B2 (en) * | 2000-07-06 | 2005-07-05 | Kabushiki Kaisha Toshiba | Surface acoustic wave device and method of manufacturing the device |
JP2002299523A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体パッケージ |
KR100431180B1 (ko) * | 2001-12-07 | 2004-05-12 | 삼성전기주식회사 | 표면 탄성파 필터 패키지 제조방법 |
KR100431181B1 (ko) * | 2001-12-07 | 2004-05-12 | 삼성전기주식회사 | 표면 탄성파 필터 패키지 제조방법 |
JP4166997B2 (ja) | 2002-03-29 | 2008-10-15 | 富士通メディアデバイス株式会社 | 弾性表面波素子の実装方法及び樹脂封止された弾性表面波素子を有する弾性表面波装置 |
US7154206B2 (en) * | 2002-07-31 | 2006-12-26 | Kyocera Corporation | Surface acoustic wave device and method for manufacturing same |
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JPH0258357A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Ltd | ピングリッドアレイ型半導体装置 |
JPH0927573A (ja) * | 1995-07-13 | 1997-01-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2000100997A (ja) * | 1998-09-17 | 2000-04-07 | Mitsubishi Electric Corp | 樹脂封止型半導体装置およびその樹脂封止方法 |
JP2001237351A (ja) * | 2000-02-22 | 2001-08-31 | Hitachi Maxell Ltd | 半導体装置 |
JP2004327623A (ja) * | 2003-04-23 | 2004-11-18 | Three M Innovative Properties Co | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
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US20080272858A1 (en) | 2008-11-06 |
EP1744453B1 (en) | 2008-08-27 |
WO2006093078A1 (ja) | 2006-09-08 |
EP1744453A4 (en) | 2007-12-05 |
JP2006245989A (ja) | 2006-09-14 |
CN1943111A (zh) | 2007-04-04 |
DE602006002442D1 (de) | 2008-10-09 |
EP1744453A1 (en) | 2007-01-17 |
US7474175B2 (en) | 2009-01-06 |
CN1943111B (zh) | 2010-08-18 |
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