JP4513530B2 - Ceramic electronic component manufacturing method, ceramic electronic component and ceramic electronic component manufacturing apparatus - Google Patents

Description

  The present invention relates to a ceramic electronic component, a manufacturing method thereof, and a manufacturing apparatus, and more specifically, a ceramic electronic component manufactured through a step of removing a part of a conductor film formed on a surface of a dielectric ceramic by laser processing, The present invention relates to a manufacturing method and a manufacturing apparatus.

  For example, a rectangular parallelepiped dielectric block made of a dielectric ceramic having a through hole, an outer conductor formed on the outer peripheral surface of the dielectric block, and an inner conductor formed on the inner peripheral surface of the through hole of the dielectric block; In the process of forming the dielectric block filter provided with the input / output electrode and the filter waveform adjusting process, the conductor film (inner conductor or outer conductor) is trimmed to a predetermined shape, thereby obtaining a desired electric As a method for obtaining characteristics, a method using a laser is known.

  However, when trimming is performed using a laser, there is a problem in that the dielectric ceramic is deteriorated and deteriorated, for example, by being partially reduced, resulting in deterioration of the product characteristics (Q).

As a method for solving such a problem, for example, a method is proposed in which a conductor film of a dielectric resonator is laser processed and trimmed and then reoxidized to recover the characteristic (Q) (patent) Reference 1).
In this method, a conductor film formed on a ceramic block or a dielectric block (base) constituting a dielectric resonator is laser-processed and trimmed, and then heat-treated in the atmosphere to reoxidize the characteristics. It tries to recover.

However, in this method, since re-oxidation after laser trimming is performed in the atmosphere, oxidation of the conductor film is unavoidable and components of the oxidized conductor film are diffused into the dielectric ceramic. As a result, there is a problem that Q is deteriorated.
In some cases, an etching process for removing the oxide layer formed on the surface of the conductor film is required, which causes a problem that the manufacturing process is complicated.

  Also proposed is a method for forming a conductor film on the surface of a dielectric ceramic, in which a copper film is formed on the surface of the dielectric ceramic by electroless copper plating and then heat-treated in an inert atmosphere containing a small amount of oxygen. (See Patent Document 2).

However, this method is not intended to recover the deterioration of the dielectric ceramic due to laser trimming, and when the adhesion strength between the dielectric block and the conductor film is low, the conductor film may be peeled off in a later step. Therefore, it is intended to improve the adhesion strength between the dielectric ceramic and the conductor film by appropriately oxidizing the conductor film. Even in this method, the components of the conductor film are diffused into the dielectric ceramic. It is presumed that there is a problem of deteriorating the Q value.
JP-A-9-162607 JP-A-8-37410

  The invention of the present application solves the above-mentioned problems, and the characteristic that the dielectric ceramic has deteriorated and deteriorated due to laser processing for removing a part of the conductor film formed on the surface of the dielectric ceramic. Manufacture of ceramic electronic components that can be recovered without causing oxidation of the conductor film or diffusion of the conductor film material into the dielectric ceramic, and capable of efficiently manufacturing ceramic electronic components with desired characteristics It is an object of the present invention to provide a method, a ceramic electronic component manufactured by the manufacturing method, and a manufacturing apparatus thereof.

In order to solve the above-described problem, a method for manufacturing a ceramic electronic component of the present invention (Claim 1) includes:
A method of manufacturing a ceramic electronic component including a step of laser processing a conductor film formed on a surface of a dielectric ceramic to adjust a resonance frequency,
(a) a first step of forming a conductor film on the surface of the dielectric ceramic;
(b) a second step of removing a part of the conductor film by irradiating the conductor film formed in the first step with laser light;
(c) The dielectric ceramic after removing a part of the conductor film is used in the conductor film with an oxygen concentration in the range of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ² ppm and a heat treatment peak temperature. And a third step of heat-treating under a condition in the range of 0.51A (K) to 0.85A (K) when the melting point of the conductive material is A (K), and
The second step (b)
(d) a step of measuring the amount of change in the resonance frequency in the third step by a prior trial production and creating a database;
(e) predicting the amount of change in resonance frequency from the database, and estimating a correction value of the processing amount of the conductor film,
In the second step (b), a part of the conductor film is removed by irradiating a laser beam under the condition determined based on the correction value estimated in the step (e). It is said.

The ceramic electronic component of the present invention (Claim 2 ) is:
A ceramic electronic component used as a dielectric resonator manufactured by the method of manufacturing a ceramic electronic component according to claim 1 ,
A dielectric block made of a dielectric ceramic having a through hole;
An outer conductor which is a conductor film formed on the surface of the dielectric block;
An inner conductor that is a conductor film formed on the inner peripheral surface of the through hole of the dielectric block, and
A part of the inner conductor and / or the outer conductor is removed by laser processing.

In addition, the ceramic electronic component manufacturing apparatus of the present invention (Claim 3 )
A ceramic electronic component manufacturing apparatus manufactured through a process of adjusting a resonance frequency by laser processing a conductor film formed on a surface of a dielectric ceramic,
(a) conductor film forming means for forming a conductor film on the surface of the dielectric ceramic;
(b) laser processing means for removing a part of the conductor film by irradiating the conductor film with laser light;
(c) The dielectric ceramic after removing a part of the conductor film is used in the conductor film with an oxygen concentration in the range of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ² ppm and a heat treatment peak temperature. A heat treatment means for heat treatment under the condition of 0.51A (K) to 0.85A (K) when the melting point of the conductive material is A (K);
(d) The amount of change in the resonance frequency in the step of heat treatment by the heat treatment means is measured by a prior trial production to create a database, and calculation / storage means for storing the database information;
(e) Predicting the amount of change in the resonance frequency from the database, and comprising an arithmetic processing means for estimating a correction value of the processing amount of the conductor film,
When removing a part of the conductor film by the laser processing means of (b), the conductor film is irradiated with laser light under conditions determined based on the correction value estimated by the arithmetic processing means of (e). It is characterized in that it is configured to remove a part of.

A method for manufacturing a ceramic electronic component according to the present invention (Claim 1) is a method for manufacturing a ceramic electronic component including a step of adjusting a resonance frequency by laser processing a conductor film formed on a surface of a dielectric ceramic, (a) a first step of forming a conductor film on the surface of the dielectric ceramic; (b) a second step of removing a part of the conductor film; and (c) after removing a part of the conductor film. If the dielectric ceramic, the oxygen concentration is ^{1.0 × 10 -15 ppm~1.0 × 10 2} ppm range, the peak temperature of the heat treatment the melting point of the conductive material used for the conductor film was a (K) And a third step of heat treatment under conditions in the range of 0.51A (K) to 0.85A (K), and the second step of (b) is (d) in the third step A process of measuring the amount of change in the resonance frequency by a prior prototype and creating a database; and (e) the change in the resonance frequency. In the second step of (b), based on the correction value estimated in the step (e). Since a part of the conductor film is removed by irradiating the laser beam under the determined conditions, it becomes possible to know an appropriate processing amount prior to laser processing, efficiently and reliably. It becomes possible to manufacture a ceramic electronic component having a desired resonance frequency.

  In addition, the heat treatment after removing a part of the conductor film is performed under the above-mentioned conditions, so that the alteration or modification by laser processing is not caused by causing oxidation of the conductor film or diffusion of the conductor film material into the dielectric ceramic. The deteriorated dielectric ceramic can be re-oxidized to restore its properties. As a result, it is possible to efficiently manufacture a ceramic electronic component having desired characteristics.

Further, when alteration such as reduction occurs in the dielectric ceramic due to laser processing, for example, in the case of a dielectric block filter, there is a problem that the Q value important as filter characteristics is lowered. By performing the heat treatment under the conditions as described above, it is possible to reoxidize the dielectric ceramic and recover the Q value of the product.

  In the present invention, the case where the melting point of the conductive material is A (K) means that when the melting point of the conductive material is 1000 ° C., this is converted to an absolute temperature and expressed as 1273 (K). Show. For example, when A = 1273 (K), 0.51 A (K) is 649 A (K) (376 ° C.), and 0.85 A (K) is 1082 K (809 ° C.).

Further, in the present invention, as the heat treatment atmosphere, the oxygen concentration was in the range of ^{1.0 × 10 -15 ppm~1.0 × 10 2} ppm , when the oxygen concentration is less than 1.0 × 10 ^-15 ppm This is because if the effect of reoxidizing the dielectric ceramic becomes insufficient and the oxygen concentration exceeds 1.0 × 10 ² ppm, the conductor film may be oxidized to adversely affect the characteristics of the product.

  In addition, when the heat treatment temperature is 0.51 A (K) to 0.85 A (K) when the melting point of the conductive material is A (K), the heat treatment temperature is 0. When the temperature is less than 51 A (K), the effect of reoxidizing the dielectric ceramic becomes insufficient, and it takes time for the heat treatment, and when the heat treatment temperature exceeds 0.85 A (K), the conductor film This is because the amount of diffusion of the material (conductor component) that constitutes the dielectric ceramic into the dielectric ceramic increases, leading to a decrease in product characteristics (for example, Q in the case of a dielectric block filter).

A ceramic electronic component according to the present invention (Claim 2 ) is a ceramic electronic component used as a dielectric resonator manufactured by the method for manufacturing a ceramic electronic component according to Claim 1 , and is a dielectric having a through hole. A dielectric block made of a body ceramic, an outer conductor that is a conductor film formed on the surface of the dielectric block, and an inner conductor that is a conductor film formed on the inner peripheral surface of the through hole of the dielectric block, In addition, since the inner conductor and / or the outer conductor are partially removed by laser processing, it is possible to provide a highly reliable ceramic electronic component having desired characteristics as a dielectric resonator. become.

The ceramic electronic component manufacturing apparatus of the present invention (Claim 3 ) manufactures a ceramic electronic component manufactured through a process of adjusting a resonance frequency by laser processing a conductor film formed on the surface of a dielectric ceramic. (A) conductor film forming means for forming a conductor film on the surface of the dielectric ceramic; (b) laser processing means for removing a part of the conductor film; and (c) a part of the conductor film. The dielectric ceramic after removal has an oxygen concentration in the range of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ² ppm, and the peak temperature of the heat treatment is the melting point of the conductive material used for the conductor film, A (K ), The amount of change in the resonance frequency in the process of heat treatment under the condition of 0.51A (K) to 0.85A (K) and (d) the heat treatment by the heat treatment means is measured by a preliminary trial production. To create a database and Computation / storage means for storing base information, and (e) computation processing means for predicting a change amount of the resonance frequency from the database and estimating a correction value of the processing amount of the conductor film, In removing a part of the conductor film by the laser processing means in b), a part of the conductor film is irradiated by irradiating laser light under the condition determined based on the correction value estimated by the arithmetic processing means in (e). Therefore, it is possible to efficiently and reliably manufacture a ceramic electronic component having a desired resonance frequency.

  The features of the present invention will be described in more detail below with reference to examples of the present invention.

Example 1 is an example of the invention to which the present invention relates. In the first embodiment, a case where a dielectric block filter is manufactured as a ceramic electronic component will be described as an example.

FIG. 1 is a diagram showing a state before laser processing of a dielectric block filter that is a ceramic electronic component according to the first embodiment , and FIG. 2 is a diagram showing a dielectric block filter after laser processing. is there.

[Configuration of dielectric block filter]
As shown in FIG. 2, the dielectric block filter includes a rectangular parallelepiped dielectric block 1 having a plurality of through holes 2, an outer conductor 3 formed on the outer peripheral surface of the dielectric block 1, and a dielectric block 1. The inner conductor 4 is formed on the inner peripheral surface of the through hole 2, and the input / output electrodes 5 are formed on the left and right end surfaces 9 and 10 and the front end surface 6. The end face (rear end face) 7 facing the front end face 6 has a structure in which the outer conductor is not formed in the main part and the dielectric ceramic is partially exposed.

  In this dielectric block filter, the inner conductor 4 formed on the inner peripheral surface of the through hole 2 is laser processed (partial region 4a of the inner conductor 4 is removed) to adjust the characteristics (this In the first embodiment, the filter waveform is adjusted), and desired characteristics are imparted. However, depending on the case, characteristic adjustment can also be performed by removing a part of the outer conductor 3 (for example, a part of the outer conductor 3 on the rear end face 7) by laser processing (in this embodiment 1, adjustment of the filter waveform). It can be performed. Furthermore, it is also possible to remove both the inner conductor 4 and the outer conductor 3 by laser processing.

[Manufacture of dielectric block filters]
Hereinafter, a method for manufacturing the dielectric block filter will be described.
(1) First, as shown in FIG. 1, a conductor film (electroless copper plating film) to be an outer conductor 3 on the outer peripheral surface of a rectangular parallelepiped dielectric block (dielectric ceramic molded body) 1 having a plurality of through holes 2 Or a baked silver electrode), and a conductor film (electroless copper plating film or baked silver electrode) to be the inner conductor 4 was formed on the inner peripheral surface of the through-hole 2.

As shown in Table 1, the dielectric block 1 is composed of dielectric 1 (BaTi-BaReTi (Re is a rare earth element) dielectric ceramic), dielectric 2 (BaTi-MgTi dielectric ceramic). Dielectric 3 (Ba—BaReTi (Re is a rare earth element) dielectric ceramic) and dielectric 4 (ZrTiSn dielectric ceramic) were used.
The conductor film is formed by an electroless plating method or a method of baking a silver paste. However, the method for forming the conductor film is not particularly limited, and a method such as electrolytic plating or vapor deposition can also be used.

(2) Then, the conductor film on the rear end face 7 of the dielectric block 1 was removed to form an open end.
(3) Next, laser processing is performed on the front side of the dielectric block 1 (region that wraps around the front end surface 6 from the front side of the upper surface 8) and both ends (regions that wrap around the left and right end surfaces 9 and 10 from both ends of the top surface 8). As shown in FIG. 2, the input / output electrode 5 was formed by removing a part of the conductor film.

[Laser processing of inner conductor]
Then, the inner conductor 4 formed on the inner peripheral surface of the predetermined through hole of each through hole 2 is laser processed under the following conditions to remove a part of the inner conductor 4, thereby adjusting the resonance frequency. (Filter waveform adjustment) was performed.
(conditions)
Laser type: SHG-YAG laser (wavelength: 532 mm)
Processing site: Laser processing of part of inner conductor

[Heat treatment]
Then, the dielectric block 1 after laser processing under the above-described conditions was heat-treated under the following heat treatment conditions to obtain a dielectric block filter as shown in FIG.
(conditions)
Atmosphere: oxygen concentration 47ppm, the rest is nitrogen Temperature (peak temperature): 873K (600 ° C)

Then, the dielectric block filter after heat treatment (dielectric block filters of test numbers 1 to 4 in Table 2) was examined for characteristics (Q) before laser processing (initial (reference)), after laser processing, and after heat treatment. .
The results are shown in Table 2.

In addition, the change rate of Q in Table 2 is a value obtained by the following formula (1), and is an average value of values obtained for 10 samples (n = 10).
Q change rate = (Q after heat treatment × 100) / Before laser processing (initial) Q (1)

  As shown in Table 2, when heat treatment was performed under conditions of an oxygen concentration of 47 ppm and a peak temperature of 873 K (600 ° C.), the Q value decreased by laser processing in any of test numbers 1 to 4 It was confirmed that the value recovered to almost the same value as before laser processing (initial value).

Since the melting point A of copper, which is a conductive material, is 1356 K (1083 ° C.), the heat treatment temperature 873 K (600 ° C.) of test numbers 1 to 3 is 0.643 A.
Further, since the melting point A of the conductive material silver is 1234 K (961 ° C.), the heat treatment temperature 873 K (600 ° C.) of Test No. 4 is 0.707 A.

  The firing peak temperature when sintering the dielectric ceramic materials of Test Nos. 1 and 2 is 1573 K (1300 ° C.), and the heat treatment temperature 873 K (600 ° C.) after the laser processing described above is the firing temperature (peak temperature). ) 55% ((873/1573) × 100).

  Further, the firing peak temperature when sintering the dielectric ceramic material of test number 3 is 1473 K (1200 ° C.), and the peak temperature 873 K (600 ° C.) of the heat treatment after the laser processing described above is the firing temperature (peak temperature). ) Equivalent to 59%.

  Further, the firing peak temperature when sintering the dielectric ceramic material of test number 4 is 1273 K (1000 ° C.), and the peak temperature 873 K (600 ° C.) of the heat treatment after the laser processing described above is the firing temperature (peak temperature). ) Of 69%.

[Relationship between heat treatment temperature and Q after heat treatment]
Further, for the same sample as in the case of test number 3 in Table 2, heat treatment after laser processing is performed under the same conditions as described above except that the heat treatment temperature is changed in the range of 1173K to 673K. The relationship of Q after heat treatment was examined. The results are shown in Table 3.

  When the peak temperature of the heat treatment exceeds 0.85 A (K) as in test number 11 of Table 3, and when the peak temperature of the heat treatment is lower than 0.51 A (K) as in test number 15, The Q decreased by laser processing did not recover to a value equivalent to that before laser processing (initial value) even after heat treatment.

  On the other hand, as in the case of test numbers 12, 13, and 14, when the heat treatment is performed under the conditions of the peak temperature of the heat treatment: 0.828 A (K), 0.644 A (K), and 0.533 A (K) It was confirmed that the Q value lowered by the laser processing recovered to a value almost equal to that before the laser processing (initial value) after the heat treatment.

  Further, as described above, the firing peak temperature when the dielectric ceramic material of test number 3 in Table 2 is sintered is 1473 K (1200 ° C.) as described above, and test numbers 12, 13, and 14 in Table 3 are used. In this case, the firing temperature is 1123 K (850 ° C.) to 723 K (450 ° C.), which corresponds to 76 to 49% of the firing temperature (peak temperature) of Test No. 3.

[Relationship between oxygen concentration in heat treatment process and Q after heat treatment]
Further, for the same sample as test number 3 in Table 2, the oxygen concentration in the atmosphere was varied (oxygen concentration: 1.0 × 10 ⁻²⁰ ppm, 1.0 × 10 ⁻¹⁵ ppm, 1.0 × 10 ^{− 10} ppm, 1.0 × 10 ⁻⁵ ppm, 1.0 ppm, 1.5 ppm), and heat treatment after laser processing under the same conditions as above except that the heat treatment temperature was 1123 K, and oxygen concentration in the atmosphere And the relationship between Q after heat treatment. The results are shown in Table 4.

As shown in Table 4, as in Test No. 21 and 22, (when that is, the oxygen concentration is less than 1.0 × 10- ¹⁵ ppm) the oxygen concentration in the atmosphere 1.0 × 10 ^-20 ppm, laser The Q that was lowered by processing further decreased after the heat treatment.
On the other hand, the oxygen concentration in the atmosphere is 1.0 × 10 ⁻¹⁵ ppm, 1.0 × 10 ⁻¹⁰ ppm, 1.0 × 10 ⁻⁵ as in test numbers 22, 23, 24, 25, and ^26. When ppm, 1.0 ppm, and 1.5 ppm (that is, when the oxygen concentration is 1.0 × 10 ⁻¹⁵ ppm or more), the Q value decreased by laser processing is the value before laser processing (initial value) after heat treatment. ) Was confirmed to recover to almost the same value.

[Oxygen concentration in heat treatment and solderability of input / output electrodes]
For the same sample as the above test number 3, except for the oxygen concentration, the oxygen concentration in the atmosphere was changed in the range of 90 ppm, 97 ppm, 100 ppm, 103 ppm, and 110 ppm, except for the oxygen concentration. Heat treatment was performed, and the solderability of the outer conductor (input / output electrode) was examined. The results are shown in Table 5.

As shown in Table 5, when the oxygen concentration in the atmosphere exceeds 1.0 × 10 ² ppm as shown in Test Nos. 34 and 35, the solderability of the input / output electrodes deteriorates. As shown in FIG. 33, it was confirmed that good solderability was ensured when the oxygen concentration was 1.0 × 10 ² ppm or less.

In addition, when the oxygen concentration in the atmosphere in the heat treatment step is set to 1.0 × 10 ² ppm or less, the oxidation of the outer conductor and the inner conductor hardly occurs as in the case of the heat treatment in the air. It was confirmed that the etching process of the electrode portion oxide layer which is necessary in the case of the heat treatment method in the atmosphere is unnecessary, and it is possible to simplify the process and reduce the cost.

Example 2 is an example of the present invention. In Example 2, a dielectric block filter was manufactured according to the procedure shown in the flowchart of FIG.

Hereinafter, a method for manufacturing the dielectric block filter of the second embodiment will be described with reference to the flowchart of FIG.
In the second embodiment as well, in the case of manufacturing a dielectric block filter having the structure shown in FIG. 2 as in the first embodiment, the inner conductor 4 formed on the inner peripheral surface of the through hole 2 is formed. An example will be described in which a part is removed by laser processing and the resonance frequency is adjusted (filter waveform adjustment). In addition, about the process and structure similar to Example 1, description is abbreviate | omitted here in order to avoid duplication.

(1) First, as shown in FIGS. 1 and 2, an outer conductor 3 is formed on the outer peripheral surface of a rectangular parallelepiped dielectric block (dielectric ceramic molded body) 1, and the inner peripheral surfaces of a plurality of through holes 2 are formed. A dielectric block filter having a structure in which an inner conductor 4 is formed and an input / output electrode 5 is disposed at a predetermined position and includes a plurality of resonators (before part of the inner conductor is removed by laser processing) A predetermined number (for example, one lot) of dielectric block filters) is produced (step 1 in FIG. 3).
(2) Then, a dielectric block filter randomly sampled from the same lot (corresponding to the first prototype dielectric ceramic of claim 1 ) is sampled, and a part of the inner conductor 4 is removed by laser processing (step) 2).
(3) Then, for the dielectric block filter subjected to laser processing, the resonance frequency f ₀ and the coupling coefficient k (initial value) of a plurality of resonators included in the dielectric block filter are measured and stored (step 3).
(4) Then, heat treatment is performed under predetermined conditions (step 4).
(5) Next, with respect to the dielectric block filter subjected to the heat treatment, the resonance frequency f ₀ and the coupling coefficient k are measured, and the relationship between the resonance frequency f ₀ and the coupling coefficient k which are the initial values measured in Step 3 ( The characteristic change amount = recovery rate is grasped (step 5).
(6) From the relationship between the amount of processing of the inner conductor 4 (the amount of removal of the inner conductor 4) including the amount of change in the heat treatment step, the resonance frequency f ₀ and the coupling coefficient k, the amount of processing (of the inner conductor 4) The relational expression of the removal amount), the resonance frequency f ₀ and the change amount of the coupling coefficient k (change amount of characteristic = recovery rate) is obtained (step 6).
Steps 2 to 6 above create a database of the amount of processing of the inner conductor 4 (the amount of removal of the inner conductor 4), the amount of change in the resonance frequency f ₀ and the coupling coefficient k (the amount of change in characteristics = the recovery rate). It becomes.

FIG. 4 is a diagram showing an example of the relationship (database) between the inner conductor processing amount (processing width) and the resonance frequency f ₀ before and after the heat treatment, obtained as described above. As shown in FIG. 4, the amount of change in the resonance frequency before and after the heat treatment is obtained from the amount of processing of the inner conductor, the resonance frequency after laser processing (before heat treatment), and the resonance frequency after heat treatment. It becomes possible to determine the amount of processing when processing.

Next, the manufacturing process (laser processing process and heat treatment process) of the dielectric block filter using the database will be described.
(1 ′) First, the resonance frequency f ₀ and the coupling coefficient k of the dielectric block filter before laser processing produced in Step 1 are measured (initial measurement) (Step 7 in FIG. 3).
(2 ′) Then, the relational expression between the amount of processing of the inner conductor 4 (the amount of removal of the inner conductor 4), the amount of change of the resonance frequency f ₀ and the coupling coefficient k (the amount of change in characteristics = the recovery rate) obtained in step 6 The processing amount of the inner conductor 4 is determined from (database) (step 8).
(3 ′) Next, laser processing is performed so that the processing amount determined in step 8 is obtained, and a part of the inner conductor 4 is removed (step 9).
(4 ′) Then, heat treatment is performed under predetermined conditions (step 10), and a dielectric block filter having desired characteristics is obtained by recovering the resonance frequency f ₀ and the coupling coefficient k (step 11).

When the resonance frequency f ₀ and the coupling coefficient k are measured after the heat treatment and there is a difference from the target characteristics, the process returns to step 8 and the processing amount is determined from the relational expression (database) obtained in step 6 ( Step 8), laser processing (Step 9), further heat treatment (Step 10), and repeating this process can be configured to obtain a dielectric block filter having desired characteristics. is there.

FIG. 5 is a diagram showing the relationship between the resonance frequency adjustment amount and the adjustment accuracy (deviation from the target value) when the resonance frequency is adjusted using the database by the method of the second embodiment.
As shown in FIG. 5, according to the method of the second embodiment, it was confirmed that adjustment close to the target can be performed regardless of the magnitude of the resonance frequency adjustment amount.

FIG. 6 is a diagram schematically showing a configuration of a manufacturing apparatus used for carrying out the method for manufacturing the ceramic electronic component (dielectric block filter) of the second embodiment.
As shown in FIG. 6, this apparatus has a conductor film forming means 21 for forming a conductor film on the surface of a dielectric ceramic (dielectric block) 1 and a conductor film by irradiating the conductor film with laser light. The laser processing means 22 for removing a part and the dielectric ceramic (dielectric block) 1 after removing a part of the conductor film have an oxygen concentration of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ^2. Heat treatment for heat treatment under the conditions of 0.51A (K) to 0.85A (K) when the melting point of the conductive material used for the conductor film is A (K) in the ppm range and the peak temperature of the heat treatment Means 23, and a calculation / storage means 24 for measuring the amount of change in the resonance frequency f ₀ and the coupling coefficient k in the step of heat treatment by the heat treatment means 23 by making a preliminary trial and creating a database, and storing the database information, Resonance frequency the variation of f ₀ and the coupling coefficient k is predicted from the database, and includes an arithmetic processing unit 25 for estimating a correction value of the processing amount of the conductive film, a portion of the conductive film by laser processing means 22 In removing, a part of the conductor film can be removed by irradiating the laser beam under the condition determined based on the correction value estimated by the arithmetic processing means 25.
Using the apparatus configured as described above, the dielectric block filter having the desired characteristics (resonance frequency f ₀ and coupling coefficient k) efficiently and reliably by carrying out the manufacturing method of the second embodiment. Can be manufactured.

In the above embodiment, the case where the dielectric block filter is manufactured has been described as an example. However, the present invention is not limited to the dielectric block filter, and is formed on the surface of the dielectric ceramic such as a printed circuit board, a ceramic multilayer board, and a capacitor. The present invention can be widely applied to the production of ceramic electronic parts including a step of removing a part of the conductor film formed by laser processing.
The conductor film in the present invention includes a resistor film. Then, the present invention can be effectively applied to a process of adjusting characteristics by removing a part of the resistor film on the surface when manufacturing a multilayer part or a CR composite part.

In the first and second embodiments, the SHG-YAG laser is used as the laser. However, the type of laser is not limited to this, and a fundamental wave-YAG laser, a THG-YAG laser, a CO ₂ laser, an excimer is used. The present invention can be widely applied when various lasers such as a laser are used.

The invention of the present application is not limited to the above embodiment in other points, and various applications and modifications can be made within the scope of the invention.

As described above, according to the present invention, the dielectric ceramic deteriorated by laser processing is reoxidized without causing the oxidation of the conductor film or the diffusion of the conductor film material into the dielectric ceramic, thereby recovering the characteristics. Therefore, it is possible to efficiently manufacture a ceramic electronic component having desired characteristics.
Accordingly, the present invention provides a case where a ceramic electronic component including a step of removing a part of a conductor film formed on the surface of a dielectric ceramic, such as a dielectric block filter, a printed circuit board, or a ceramic multilayer board, by laser processing is manufactured. It can be widely applied to the manufacturing apparatus.

It is a figure which shows the ceramic electronic component (dielectric block filter) before carrying out laser processing of the inner conductor. It is a figure which shows the ceramic electronic component (dielectric block filter) manufactured by the method concerning one Example of this invention. It is a figure which shows the flowchart of the manufacturing method of the ceramic electronic component (dielectric block filter) of Example 2 of this invention. A processing amount of the inner conductor (processing width) is a diagram showing an example of the relationship between the resonance frequency f ₀ before and after the heat treatment (database). It is a figure which shows the relationship between the resonance frequency adjustment amount and adjustment accuracy (deviation from a target value) at the time of adjusting a resonance frequency using a database by the method of Example 2 of this invention. It is a figure which shows typically the structure of the manufacturing apparatus used in order to implement the manufacturing method of the ceramic electronic component (dielectric block filter) of Example 2 of this invention.

DESCRIPTION OF SYMBOLS 1 Dielectric block 2 Through-hole 3 Outer conductor 4 Inner conductor 4a Partial area | region of an inner conductor 5 Input / output electrode 6 Front side end surface 7 End surface (rear side end surface) facing a front side end surface
8 Upper surface 9, 10 Left and right end surfaces 21 Conductor film forming means 22 Laser processing means 23 Heat treatment means 24 Arithmetic / storage means 25 Arithmetic processing means

Claims (3)

A method of manufacturing a ceramic electronic component including a step of laser processing a conductor film formed on a surface of a dielectric ceramic to adjust a resonance frequency,
(a) a first step of forming a conductor film on the surface of the dielectric ceramic;
(b) a second step of removing a part of the conductor film by irradiating the conductor film formed in the first step with laser light;
(c) The dielectric ceramic after removing a part of the conductor film is used in the conductor film with an oxygen concentration in the range of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ² ppm and a heat treatment peak temperature. A third step of heat-treating under a condition in the range of 0.51 A (K) to 0.85 A (K) when the melting point of the conductive material is A (K), and
The second step (b)
(d) a step of measuring the amount of change in the resonance frequency in the third step by a prior trial production and creating a database;
(e) predicting the amount of change in resonance frequency from the database, and estimating a correction value of the processing amount of the conductor film,
In the second step (b), a part of the conductor film is removed by irradiating a laser beam under the condition determined based on the correction value estimated in the step (e). A method for manufacturing a ceramic electronic component. A ceramic electronic component used as a dielectric resonator manufactured by the method of manufacturing a ceramic electronic component according to claim 1,
A dielectric block made of a dielectric ceramic having a through hole;
An outer conductor which is a conductor film formed on the surface of the dielectric block;
An inner conductor that is a conductor film formed on the inner peripheral surface of the through hole of the dielectric block, and
A part of the inner conductor and / or the outer conductor is removed by laser processing. A ceramic electronic component manufacturing apparatus manufactured through a process of adjusting a resonance frequency by laser processing a conductor film formed on a surface of a dielectric ceramic,
(a) conductor film forming means for forming a conductor film on the surface of the dielectric ceramic;
(b) laser processing means for removing a part of the conductor film by irradiating the conductor film with laser light;
(c) The dielectric ceramic after removing a part of the conductor film is used in the conductor film with an oxygen concentration in the range of 1.0 × 10 ⁻¹⁵ ppm to 1.0 × 10 ² ppm and a heat treatment peak temperature. A heat treatment means for heat treatment under the condition of 0.51A (K) to 0.85A (K) when the melting point of the conductive material is A (K);
(d) The amount of change in the resonance frequency in the step of heat treatment by the heat treatment means is measured by a prior trial production to create a database, and calculation / storage means for storing the database information;
(e) Predicting the amount of change in the resonance frequency from the database, and comprising an arithmetic processing means for estimating a correction value of the processing amount of the conductor film,
When removing a part of the conductor film by the laser processing means of (b), the conductor film is irradiated with laser light under conditions determined based on the correction value estimated by the arithmetic processing means of (e). An apparatus for producing a ceramic electronic component, characterized in that a part of the ceramic electronic component is removed.

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