JP4511236B2 - Semiconductor manufacturing apparatus and measurement deviation detection method - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus and a measurement deviation detection method, and more particularly to an apparatus for manufacturing a semiconductor substrate including a transfer chamber and a vacuum (or pressure increase) processing chamber partitioned by a valve, and a measurement deviation detection method for a pressure gauge in this apparatus. It is about.

  In the process of film formation (CVD (Chemical Vapor Deposition), sputtering) and dry etching of semiconductor substrates, the processing chamber pressure during and before processing greatly affects the processing characteristics. The process chamber pressure is adjusted by adjusting the pump displacement and gas introduction rate based on the measured pressure. Therefore, high accuracy is required for the pressure gauge in the processing chamber. On the other hand, pressure gauges installed in the processing chamber are exposed to reactive processing gases, etc., which may cause wear and failure of the measuring unit and cause deviations in measured values. It is necessary to do. It is difficult to predict the degree of wear and the failure frequency because the degree of wear and the failure frequency of this pressure gauge have many influencing factors such as processing conditions, operating environment, and manufacturing errors. For this reason, a technique for detecting a measurement value shift or failure due to exhaustion of the processing chamber pressure gauge is an important technique.

  An example of pressure gauge deviation detection technology is disclosed in Patent Document 1. FIG. 4 is a configuration diagram of the dry etching apparatus described in Patent Document 1. In the dry etching apparatus of FIG. 4, the pressure in the vacuum chamber 204 is measured by the pressure gauge 208, the measured signal is sent to the pressure control unit 206, the pressure control unit 206 operates the pressure regulator 205, and the vacuum chamber 204 is It is a device that controls the pressure to be set. In order to detect deviation (abnormality) of the pressure gauge 208, the pressure gauge 209 is installed in the same vacuum chamber as the pressure gauge 208, and the set pressure value and the vacuum chamber 204 measured by the pressure gauge 209 are measured by the apparatus control unit 211. Is compared with the measured pressure value. When a deviation occurs in the pressure gauge 208, a difference occurs between the pressure in the vacuum chamber 204 controlled based on the measured value and the set pressure. Therefore, the measured value of the pressure gauge 209 is compared with the set pressure. It is possible to detect the deviation of the total 208. However, since both the pressure gauge 208 and the pressure gauge 209 are installed in the vacuum chamber 204, deterioration occurs due to the influence of a reactive processing gas or the like, and the measured value of the pressure gauge 209 is also reliable as a comparison standard. Lack. Therefore, in order to improve reliability, a pressure gauge 210 having a valve 212 that is closed when a reactive processing gas is introduced is installed. Since the pressure gauge 210 is not easily affected by a reactive processing gas or the like and has little deterioration, the pressure gauge 210 has a structure for determining the deterioration state of the pressure gauge 208 and the pressure gauge 209 based on the measured value.

  Another example of pressure gauge deviation detection technology is disclosed in Patent Document 2. FIG. 5 is a configuration diagram of the vacuum processing apparatus described in Patent Document 2, and FIG. 6 is a flowchart showing the pressure control method described in Patent Document 2. In the vacuum apparatus of FIG. 5, it is assumed that the two pressures in the transfer chamber 110 and the process chamber 120 become the same when a certain amount of time has elapsed after the gate valve 131b is opened in step S124. In step S125, the measured value Pt2 of the pressure sensor 134a of the transfer chamber 110 after the elapse of time and the measured value Pp2 of the pressure sensor 134b of the process chamber 120 are measured. In step S126, the measured value difference ΔP = (Pp2-Pt2) is calculated. Calculated as the sensor deviation amount and corrects the set value.

Japanese Patent No. 2826409 (FIG. 2) JP 2000-181548 A (FIGS. 1 and 4)

  The technique disclosed in Patent Document 1 has a structure in which a valve or a pressure gauge is added to the processing chamber to detect a deviation of the pressure gauge. In this technique, it is necessary to add a pressure gauge and a valve which are not originally used in the processing, and there is a drawback that the cost of parts and modification for implementation are high. In particular, in recent production facilities having, for example, 2 to 6 processing chambers, if a plurality of pressure gauges are installed in all the processing chambers, the equipment cost and equipment installation location increase, leading to an increase in production costs. It is difficult to realize. This problem is due to the fact that the conventional technology has only a function of comparing pressure measurement values, so that a pressure gauge for comparison must be installed in a place where pressure is equal (in the same processing chamber). ing.

  On the other hand, in the technique disclosed in Patent Document 2, the pressure measurement deviation is corrected on the assumption that both chambers have the same pressure when the gate valve is opened. However, in recent semiconductor processing apparatuses, in order to perform high-purity processing, there are many apparatuses having a preliminary vacuum chamber that suppresses the mixing of impurity gas into the transfer chamber and the processing chamber. In these apparatuses, the pressure in the transfer chamber and the processing chamber is large. Is always kept at a low pressure in the molecular flow region of 1E-2 Pa or less during processing. At the pressure of the molecular flow region of 1E-2Pa or less, since the absolute value of the pressure difference between the chambers is small, the force that balances the pressure distribution is weak, and the gate valve opens greatly due to the influence of the gate valve opening with low conductance. A pressure difference is also generated between chambers connected in a heated state. For this reason, the pressure deviation detection method of Patent Document 2 can be used in a semiconductor processing apparatus that does not have a preliminary vacuum chamber, or in a viscous flow pressure region (1E-1 Pa or higher) such as transfer on the atmospheric pressure side. It cannot be used for detection of measurement deviation in the processing chamber pressure gauge of the semiconductor processing apparatus.

  Accordingly, it is an object of the present invention to provide a semiconductor manufacturing apparatus that detects a measurement deviation amount under pressure in a molecular flow region and has a low equipment cost, and a measurement deviation detection method for a pressure gauge in this apparatus.

A semiconductor manufacturing apparatus according to one aspect of the present invention that achieves the above object includes a depressurized transfer chamber, a depressurized process chamber, a valve that blocks or opens between the transfer chamber and the process chamber, and a transfer chamber. And a processing chamber pressure gauge for measuring the pressure in the processing chamber. In addition, the first measured value by the processing chamber pressure gauge when the valve is shut off and the second measured value by the transfer chamber pressure gauge when a predetermined time has elapsed after opening the valve are input. A deviation detector for obtaining a measurement deviation amount in the processing chamber pressure gauge when time has elapsed is provided.
The deviation detector obtains an estimated value of the pressure in the processing chamber when a predetermined time elapses based on the first measurement value and the second measurement value, and the processing chamber pressure gauge when the predetermined time elapses The difference between the measured value and the predicted value is obtained as a measurement deviation amount.

  The deviation detector may output a signal indicating that the processing chamber pressure gauge is abnormal when the measurement deviation amount is larger than a predetermined value.

  Further, an expected value may be obtained from the exhaust speed of the vacuum pump provided in the processing chamber, the conductance of the valve, the first measured value, and the second measured value.

  Furthermore, when the exhaust velocity is Ss, the conductance is C, the first measurement value is Psc, and the second measurement value is Pho, the expected value Psy is Psy = (SsPsc + CPho) / (Ss + C) You may ask as.

A semiconductor manufacturing apparatus according to another aspect of the present invention includes a depressurized transfer chamber, depressurizable n (n is a natural number of 2 or more) processing chambers, a transfer chamber, and i-th (i = 1 to n). An i-th valve that shuts off or opens a (integer) processing chamber, a transfer chamber pressure gauge that measures the pressure in the transfer chamber, and an i-th processing chamber pressure gauge that measures the pressure in the i-th processing chamber . Further, the measured value by the i-th processing chamber pressure gauge when all the valves are shut off before the i-th valve is opened, and the transfer chamber pressure when a predetermined time has elapsed after the i-th valve is opened. And an i-th detector for obtaining an i-th measurement deviation amount in the i-th processing chamber pressure gauge when a predetermined time has elapsed. Further, for the i-th measurement deviation amount output from the i-th detector, an alarm device for generating an alarm when the deviation is in the same direction and the total value of deviations i = 1 to n is larger than a predetermined value. Prepare.
The i-th detector is a measured value by the i-th processing chamber pressure gauge when all valves are shut off before the i-th valve is opened, and a predetermined time has elapsed after the i-th valve is opened. The i-th predicted value of the pressure in the i-th processing chamber when a predetermined time elapses is obtained based on the measured value by the transfer chamber pressure gauge at the time, and the i-th processing chamber when the predetermined time elapses A difference between the i-th measured value by the pressure gauge and the i-th predicted value is obtained as the i-th measurement deviation amount.

  A measurement deviation detection method according to still another aspect of the present invention is a method for detecting a measurement deviation of a pressure gauge in an apparatus for manufacturing a semiconductor substrate. The method includes a step of blocking between a depressurized transfer chamber and a depressurized processing chamber by a valve, a step of measuring a pressure in the processing chamber in a state where the valve is blocked, and obtaining a first measurement value. And including. Further, the method includes a step of opening the space between the transfer chamber and the processing chamber by a valve, a step of waiting for a predetermined time, and a step of measuring a pressure in the transfer chamber and obtaining a second measured value. Further, a step of obtaining an estimated value of the pressure in the processing chamber from the first measured value and the second measured value, and a difference between the measured value of the pressure in the processing chamber when the valve is open and the expected value are calculated. Determining as a measurement deviation amount.

  According to the present invention, since the function of detecting a pressure gauge deviation in the processing chamber is realized using an existing pressure gauge in the vacuum transfer chamber adjacent to the processing chamber, a pressure gauge and a valve are added to the processing chamber. It is unnecessary and the equipment cost can be reduced.

  In addition, pressure gauge deviation is detected taking into account the effects of valve conductance and processing chamber vacuum leakage, so even if the pressure is low (molecular flow region of 1E-2Pa or less), measurement of the processing chamber pressure gauge It is possible to detect a deviation.

  Furthermore, by managing the sign and total value of the pressure difference signals of a plurality of processing chambers, it is possible to prevent a decrease in detection accuracy of pressure gauge deviations in each processing chamber due to deterioration or failure of the transfer chamber pressure gauge.

  A semiconductor manufacturing apparatus according to an embodiment of the present invention will be described. The semiconductor manufacturing apparatus includes a transfer chamber (3 in FIG. 1) that can be depressurized by a vacuum pump (5 in FIG. 1), a processing chamber (7 in FIG. 1) that can be depressurized by a vacuum pump (8 in FIG. 1), a transfer A gate valve (6 in FIG. 1) is provided to block or open between the chamber (3 in FIG. 1) and the processing chamber (7 in FIG. 1). Further, a transfer chamber pressure gauge (23 in FIG. 1) that measures the pressure in the transfer chamber (3 in FIG. 1) and a processing chamber pressure gauge (in FIG. 1) that measures the pressure in the processing chamber (7 in FIG. 1). 24), the measured value of the processing chamber pressure gauge (24 in FIG. 1) when the gate valve (6 in FIG. 1) is shut off, and the measured value of the transfer chamber pressure gauge (23 in FIG. 1) when the gate valve is opened. Deviation detectors (22 and 26 in FIG. 1) for inputting and obtaining a measurement deviation amount in the processing chamber pressure gauge (24 in FIG. 1) when the gate valve is opened.

  The semiconductor manufacturing apparatus having such a configuration measures the pressure in the processing chamber while the gate valve is shut off, and obtains the first measurement value (Psc in FIG. 2). Further, the gate chamber opens between the transfer chamber and the processing chamber, waits for a predetermined time (Ts in FIG. 2), measures the pressure in the transfer chamber, and obtains the second measured value (Pho in FIG. 2). . Further, an expected value of the pressure in the processing chamber (Psy in FIG. 2) is obtained from the first measured value and the second measured value, and the measured value of the pressure in the processing chamber when the gate valve is open (FIG. 2). Pso) and the expected value are obtained as the measurement deviation (Pse in FIG. 2). The pressure gauge deviation in the processing chamber is determined based on whether or not the obtained measurement deviation amount is within an allowable range (Pa in FIG. 2).

  In other words, by providing a function to compare pressure values that cannot be directly compared, existing pressure gauges can be used to eliminate abnormalities in processing due to pressure gauge deterioration or failure without adding a new pressure gauge for comparison. Can be prevented.

  Next, the semiconductor manufacturing apparatus will be described in more detail in accordance with an embodiment. FIG. 1 is a block diagram showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. In FIG. 1, a semiconductor manufacturing apparatus includes a preliminary vacuum chamber 1, a vacuum transfer chamber 3, a processing chamber 7, gate valves 2 and 6, a transfer chamber vacuum pump 5, a processing chamber vacuum pump 8, a transfer controller 20, and a processing chamber controller. 21, a pressure comparison / determination unit 22, a determination standard calculation unit 26, a transfer chamber pressure gauge 23, and a processing chamber pressure gauge 24. The semiconductor manufacturing apparatus shown in FIG. 1 is an example of a basic vacuum processing apparatus composed of three chambers: a preliminary vacuum chamber 1, a vacuum transfer chamber 3, and a processing chamber 7.

  The preliminary vacuum chamber 1 and the vacuum transfer chamber 3 are partitioned by a gate valve 2 that opens only when the semiconductor substrate is transferred. Similarly, the vacuum transfer chamber 3 and the processing chamber 7 are partitioned by the gate valve 6, and the gate valve 2 and the gate valve 6 are controlled by the transfer controller 20 so as not to be opened simultaneously. The vacuum transfer chamber 3 is provided with a transfer arm 4 and a transfer chamber pressure gauge 23, and the vacuum transfer chamber 3 is maintained in a vacuum by a transfer chamber vacuum pump 5. A processing chamber pressure gauge 24 is installed in the processing chamber 7, and the processing chamber 7 is maintained in a vacuum by the processing chamber vacuum pump 8. A pressure signal 41 output from the transfer chamber pressure gauge 23 is input to the transfer controller 20, and a pressure signal 46 output from the process chamber pressure gauge 24 is input to the process chamber controller 21. The pressure signal 41 and the pressure signal 46 are input to the pressure comparison / determination unit 22 and the determination standard calculation unit 26.

  In the configuration shown in FIG. 1, there are only two devices newly added to the conventional standard semiconductor manufacturing apparatus (vacuum production apparatus), that is, the pressure comparison determination unit 22 and the determination standard calculation unit 26. The equipment is pre-installed in standard vacuum production equipment.

  Next, the operation of the semiconductor manufacturing apparatus according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a diagram illustrating a change between the transfer chamber pressure measurement value Ph (t) and the processing chamber pressure measurement value Ps (t) when the gate valve is opened and closed. The transfer chamber pressure measurement value Ph (t) is the value of the pressure signal 41 output from the transfer chamber pressure gauge 23, and the process chamber pressure measurement value Ps (t) is output from the process chamber pressure gauge 24. This is the value of the pressure signal 46.

  First, the semiconductor substrate is carried into the preliminary vacuum chamber 1 from the outside and the preliminary vacuum chamber 1 is depressurized, and then passes through the gate valve 2 opened by the preliminary chamber gate valve opening / closing signal 40 output from the transfer controller 20. The semiconductor substrate is transferred to the vacuum transfer chamber 3 by the transfer arm 4.

Thereafter, the gate valve 2 is closed again by the auxiliary chamber gate valve opening / closing signal 40. At this time, the state of the “gate valve closed A” section shown in FIG. In this state, the value of the pressure signal 41 is the measured pressure value Phc before the valve is opened, and the value of the pressure signal 46 is the measured value Psc of the processing chamber before the valve is opened. The determination standard calculator 26 calculates the processing chamber from three parameters, that is, the measured pressure value Psc of the processing chamber before opening the valve, the ultimate pressure value Pus of the processing chamber vacuum pump 8 set in advance, and the exhaust speed Ss of the processing chamber vacuum pump 8. The vacuum leak amount Qs of 7 is calculated and recorded. The amount of vacuum leak Qs is
Qs = Ss (Psc-Pus) ---- (1)
It is expressed.

Thereafter, the gate valve 6 is opened by the gate valve opening / closing signal 43 output from the transfer controller 20, and the substrate transfer operation is started by the transfer arm 4. When the gate valve 6 is opened, the state of the “gate valve open” section shown in FIG. In this state, a gas can normally flow from the vacuum transfer chamber 3 having a high pressure to the process chamber 7 so that the pressure difference between the vacuum transfer chamber 3 and the process chamber 7 is reduced through the opening of the valve. The flow rate Qy of this flow is determined from the conductance C of the gate valve 6, the valve opening vacuum transfer chamber pressure measurement value Pho after the preset stabilization waiting time Ts, and the expected processing chamber pressure value Psy,
Qy = C (Pho-Psy) ---- (2)
It becomes.

Generally, if the pressure in the vacuum chamber is P, the gas flow rate to the vacuum chamber is Q, the exhaust speed of the vacuum pump provided in the vacuum chamber is S, and the ultimate pressure of the vacuum pump is Pu,
P = Q / S + Pu ---- (3)
There is a relationship represented by Therefore, since the total amount of gas flow to the processing chamber 7 is Qy + Qs, the predicted processing chamber pressure value Psy is
Psy = (Qy + Qs) / Ss + Pus −−− (4)
It is expressed. Substituting equations (1) and (2) into equation (4),
Psy = (C (Pho-Psy) + Ss (Psc-Pus)) / Ss + Pus −−− (5)
And Psy is obtained from equation (5).
Psy = (SsPsc + CPho) / (Ss + C) −−− (6)
Is obtained.

  The predicted processing chamber pressure value Psy represented by the equation (6) is calculated by the determination standard calculator 26. Further, the determination standard calculator 26 calculates the processing chamber pressure allowable range Pa from a value set in advance with the predicted processing chamber pressure value Psy as a center, and sends it to the pressure comparison determination device 22.

  After the gate valve 6 is opened, the pressure comparison / determination unit 22 compares whether or not the valve-opening processing chamber pressure measurement value Pso is within the processing chamber pressure allowable range Pa after the preset stabilization waiting time Ts. judge. When the valve-opening processing chamber pressure measurement value Pso is outside the processing chamber pressure allowable range Pa, a processing chamber pressure gauge abnormality signal 44 is sent to the processing chamber controller 21 to stop the processing and prevent the occurrence of abnormal products. . If the measured value Pso of the processing chamber pressure when the valve is open is inside the processing chamber pressure allowable range Pa, the processing chamber pressure gauge abnormality signal 44 is not transmitted, and the gate valve 6 is closed after the substrate transfer is completed (see FIG. 2). In the “gate valve closed B” section), the processing chamber controller 21 starts processing in the processing chamber 7 by the transfer completion signal 42 transmitted from the transfer controller 20 to the processing chamber controller 21.

  After the processing in the processing chamber 7 is completed, the state transition of FIG. 2 (when the gate valve is closed) is also performed when the substrate is transferred from the processing chamber 7 to the vacuum transfer chamber 3 as in the transfer from the vacuum transfer chamber 3 to the processing chamber 7 described above. Since A ⇒ gate valve open ⇒ gate valve closed B), it is possible to determine whether the processing chamber pressure gauge 24 is abnormal (deviation).

  The semiconductor manufacturing apparatus according to the first embodiment is configured as described above, and uses the pressure signal 41, the pressure signal 46, and the known characteristic constants of the pump and valve according to the equation (6) to perform the prediction process. The chamber pressure value Psy is calculated. The deviation of the processing chamber pressure gauge 24 can be determined based on the pressure value Psy. Therefore, since it is not necessary to add a new pressure gauge or valve, the equipment cost of the semiconductor manufacturing apparatus can be reduced.

  Further, since the pressure gauge deviation is detected in consideration of the conductance of the gate valve 6 and the amount of vacuum leak in the processing chamber, the measurement deviation detection accuracy at a low pressure is high, and the pressure in the processing chamber 7 and the vacuum transfer chamber 3 is high. Even when the flow rate is low (molecular flow region of 1E-2 Pa or less), the measurement deviation of the processing chamber pressure gauge 24 can be detected with high accuracy.

  FIG. 3 is a block diagram showing a configuration of a semiconductor manufacturing apparatus according to the second embodiment of the present invention. In FIG. 3, the semiconductor manufacturing apparatus includes a preliminary vacuum chamber 1, a vacuum transfer chamber 3 a, processing chambers 7, 10, 12, gate valves 2, 6, 9, 11, a transfer chamber vacuum pump 5, and processing chamber vacuum pumps 8, 13. , 14, transfer controller 20a, pressure comparison / determination units 22, 27, 30, determination standard calculators 26, 28, 31, transfer chamber pressure gauge 23, processing chamber pressure gauges 24, 29, 32, transfer chamber pressure gauge deviation alarm A device 33 is provided. 3, the same reference numerals as those in FIG. 1 represent the same or equivalent components, and the description thereof is omitted. Further, the processing chamber controller is not shown.

  In the second embodiment, three processing chambers 7, 10, and 12 are provided for the vacuum transfer chamber 3a. The processing chamber 10 is provided with a gate valve 9 to the vacuum transfer chamber 3 a, a processing chamber vacuum pump 13, and a processing chamber pressure gauge 29, and the processing chamber 10 is maintained in vacuum by the processing chamber vacuum pump 13. ing. The pressure signal 48 output from the processing chamber pressure gauge 29 is input to the pressure comparison / determination unit 27 and the determination standard calculator 28.

  Further, the processing chamber 12 is provided with a gate valve 11 to the vacuum transfer chamber 3 a, a processing chamber vacuum pump 14, and a processing chamber pressure gauge 32, and the processing chamber 12 is evacuated by the processing chamber vacuum pump 14. Maintained. The pressure signal 49 output from the processing chamber pressure gauge 32 is input to the pressure comparison / determination unit 30 and the determination standard calculation unit 31.

  Further, the pressure signal 41 output from the transfer chamber pressure gauge 23 is input to the transfer controller 20a, and is also input to the pressure comparison / determination units 22, 27, and 30 and the determination standard calculators 26, 28, and 31. The gate valve opening / closing signal 43 output from the transport controller 20 a is input to the gate valve 6, the pressure comparison / determination unit 22, and the determination standard calculation unit 26. The gate valve opening / closing signal 54 output from the transport controller 20 a is input to the gate valve 9, the pressure comparison / determination unit 27, and the determination standard calculator 28. The gate valve opening / closing signal 55 output from the transport controller 20 a is input to the gate valve 11, the pressure comparison / determination unit 30, and the determination standard calculation unit 31.

  The semiconductor manufacturing apparatus configured as described above performs processing while transporting a plurality of processing chambers when processing a semiconductor substrate, but two or more gate valves do not open at the same time. Accordingly, when the semiconductor substrate is carried into or out of the respective processing chambers 7, 10, and 12, the pressure gauges (processing chamber pressure gauges 24, processing chamber pressure gauges) of the respective processing chambers are used in the same manner as in the first embodiment. 29, the process chamber pressure gauge 32) is individually determined to be abnormal (deviation), and if there is an abnormality, the process is stopped.

  Further, in the second embodiment, the processing chamber pressure deviation amounts (corresponding to Pse in FIG. 2) from the pressure comparison / determination units 22, 27, and 30 of the processing chambers are used as pressure deviation signals 50, 51, and 52, respectively. Collected in the pressure gauge deviation alarm 33.

  The transfer chamber pressure gauge deviation alarm device 33 calculates the total value including the sign of the value of the pressure deviation signals 50, 51, and 52 from each processing chamber, and exceeds a preset value (for all pressure gauges). When the deviation is in the same direction and the total value is larger than the set value), an abnormal measurement deviation of the transfer chamber pressure gauge 23 is a concern, so an alarm is generated to stop the processing of the apparatus.

  The transfer chamber pressure gauge 23 is not exposed to a reactive gas or the like and has a low frequency of deterioration and failure, but the possibility of deterioration and failure is not zero. By managing, it is possible to prevent a decrease in detection accuracy of pressure gauge deviation in each processing chamber due to deterioration or failure of the transfer chamber pressure gauge 23.

1 is a block diagram showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. It is a figure showing change of conveyance chamber pressure measurement value Ph (t) and processing chamber pressure measurement value Ps (t) accompanying gate valve opening and closing. It is a block diagram which shows the structure of the semiconductor manufacturing apparatus which concerns on the 2nd Example of this invention. It is a block diagram of the conventional dry etching apparatus. It is a block diagram of the conventional vacuum processing apparatus. It is a flowchart figure which shows the conventional pressure control method.

Explanation of symbols

1 Preliminary vacuum chamber 2, 6, 9, 11 Gate valve 3, 3a Vacuum transfer chamber 4 Transfer arm 5 Transfer chamber vacuum pump 7, 10, 12 Processing chamber 8, 13, 14 Processing chamber vacuum pump 20, 20a Transfer controller 21 Processing chamber controllers 22, 27, 30 Pressure comparison / determination unit 23 Transfer chamber pressure gauges 24, 29, 32 Processing chamber pressure gauges 26, 28, 31 Judgment standard calculator 33 Transfer chamber pressure gauge deviation alarm device 40 Preliminary chamber gate valve opening / closing Signal 41 Pressure signal 42 Transfer completion signal 43 Gate valve opening / closing signal 44 Processing chamber pressure gauge abnormality signal 45 Processing completion signal 46, 48, 49 Pressure signal 50, 51, 52 Deviation signal 54, 55 Gate valve opening / closing signal

Claims (9)

A depressurized transfer chamber;
A depressurized processing chamber;
A valve for blocking or opening between the transfer chamber and the processing chamber;
A transfer chamber pressure gauge for measuring the pressure in the transfer chamber;
A processing chamber pressure gauge for measuring the pressure in the processing chamber;
The first measured value by the processing chamber pressure gauge when the valve is shut off and the second measured value by the transfer chamber pressure gauge when a predetermined time has elapsed after opening the valve are input, and after the valve is opened A deviation detector for obtaining a measurement deviation amount in the processing chamber pressure gauge when the predetermined time has elapsed,
Equipped with a,
The deviation detector obtains an expected value of the pressure in the processing chamber when the predetermined time has elapsed based on the first measurement value and the second measurement value, and the predetermined time has elapsed. the semiconductor manufacturing apparatus according to claim Rukoto configured to determine a difference between the predicted value and the measured value by the processing chamber pressure gauge when as the measurement displacement amount. The deviation detector, the measurement deviation amount is a semiconductor manufacturing apparatus according to claim 1, wherein the outputting the signal indicating the processing chamber pressure gauge is abnormal if greater than a predetermined value. And pumping speed of the vacuum pump provided in the processing chamber, and the conductance of said valve, said a first measurement value, and a second measurement value, according to claim 1, wherein the determining the predicted value Semiconductor manufacturing equipment. When the exhaust velocity is Ss, the conductance is C, the first measured value is Psc, and the second measured value is Pho, the predicted value Psy is Psy = (SsPsc + CPho) / (Ss + 4. The semiconductor manufacturing apparatus according to claim 3 , wherein the semiconductor manufacturing apparatus is obtained as C). A depressurized transfer chamber;
N processing chambers (n is a natural number of 2 or more) that can be decompressed;
An i-th valve that shuts off or opens between the transfer chamber and the i-th (i = 1 to n) processing chamber;
A transfer chamber pressure gauge for measuring the pressure in the transfer chamber;
An i-th process chamber pressure gauge for measuring the pressure in the i-th process chamber;
The measured value by the i-th processing chamber pressure gauge when all the valves are shut off before the i-th valve is opened, and the conveyance when a predetermined time has elapsed after the i-th valve is opened. An i-th detector that inputs a measured value by a chamber pressure gauge and obtains an i-th measurement deviation amount in the i-th processing chamber pressure gauge when the predetermined time has elapsed;
An alarm device for generating an alarm when the total deviation of i = 1 to n is greater than a predetermined value in the same direction with respect to the i-th measurement deviation amount output from the i-th detector; ,
Equipped with a,
The i th detector is measured by the i th processing chamber pressure gauge when all the valves are shut off before the i th valve is opened, and after the i th valve is opened, Based on a measured value by the transfer chamber pressure gauge when the predetermined time has elapsed, an i-th predicted value of the pressure in the i-th processing chamber when the predetermined time has elapsed is obtained, and the predetermined time semiconductor production, wherein Rukoto configured to determine as a measurement displacement amount of said i-the difference between the measured value of the i by the processing chamber pressure gauge of the i and the predicted value of the i-th when elapsed apparatus. A measurement deviation detection method of a pressure gauge in an apparatus for manufacturing a semiconductor substrate,
A step of blocking between the transfer chamber capable of depressurization and the processing chamber depressurized by a valve;
Measuring a pressure in the processing chamber in a state where the valve is shut off, and obtaining a first measurement value;
Opening the space between the transfer chamber and the processing chamber by the valve;
Waiting for a predetermined time;
Measuring the pressure in the transfer chamber to obtain a second measured value;
Obtaining an expected value of the pressure in the processing chamber from the first measurement value and the second measurement value;
Obtaining a difference between the measured value of the processing chamber pressure when the valve is open and the expected value as a measurement deviation amount; and
A measurement deviation detection method comprising: 7. The measurement deviation detection method according to claim 6 , further comprising a step of determining that the pressure gauge in the processing chamber is abnormal when the measurement deviation amount is larger than a predetermined value. And pumping speed of the vacuum pump provided in the processing chamber, and the conductance of said valve, said a first measurement value, and a second measurement value, according to claim 6, wherein the determining the predicted value Measurement deviation detection method. When the exhaust velocity is Ss, the conductance is C, the first measured value is Psc, and the second measured value is Pho, the predicted value Psy is Psy = (SsPsc + CPho) / (Ss + 9. The measurement deviation detection method according to claim 8 , wherein the measurement deviation detection method is obtained as C).

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