JP4578510B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP4578510B2 JP4578510B2 JP2007219077A JP2007219077A JP4578510B2 JP 4578510 B2 JP4578510 B2 JP 4578510B2 JP 2007219077 A JP2007219077 A JP 2007219077A JP 2007219077 A JP2007219077 A JP 2007219077A JP 4578510 B2 JP4578510 B2 JP 4578510B2
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- solar cell
- cell substrate
- photoelectric conversion
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- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 66
- 239000011241 protective layer Substances 0.000 claims description 47
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 29
- 229920005989 resin Polymers 0.000 claims description 29
- 239000000969 carrier Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 33
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007645 offset printing Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000007639 printing Methods 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
前記光電変換部の主面上に、前記複数本の細線電極を所定の方向に沿って延びるように形成するとともに、前記バスバー電極を前記細線電極と交差するように形成することにより前記太陽電池基板を形成する工程Aと、円柱状のブランケットの柱面に樹脂材料を貼付する工程Bと、前記樹脂材料を前記太陽電池基板の主面上に転写することにより前記表面保護層を形成する工程Cとを備え、前記工程Cでは、前記太陽電池基板の主面上において、前記ブランケットを前記所定の方向に沿って回動させることにより、前記ブランケットを前記複数本の細線電極を順次乗り越えさせることなく前記太陽電池基板の主面上に前記表面保護層を形成することを要旨とする。
太陽電池1の概略構成について、図1及び図2を参照しながら説明する。図1は、本実施形態に係る太陽電池1の斜視図である。図2は、本実施形態に係る太陽電池1の平面図である。
次に、本実施形態に係る太陽電池1の製造方法について説明する。
ブランケットを利用した印刷法を用いて表面保護層を形成すると、太陽電池基板表面のうち細線電極の周囲に表面保護層が形成されない場合があった。本発明者らは、このような問題が、太陽電池基板の表面上において細線電極が延びる方向と、ブランケットが回動する方向とが異なるために発生するという知見を得た。
以下のようにして、実施例に係る太陽電池を作製した。
以下のようにして、比較例に係る太陽電池を作製した。
上記実施例及び比較例について耐湿試験を行った。図7は、実施例及び比較例を温度85℃、湿度85%の環境に1000時間さらした場合における、太陽電池の出力値の経時変化を示す図である。なお、同図では、実施例及び比較例に係る太陽電池の出力値を、耐湿試験前におけるそれぞれの出力値を1.00として規格化して表している。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10…太陽電池基板
12…光電変換部
12…太陽電池基板
14…細線電極
15…細線電極
16…バスバー電極
20…表面保護層
30…版胴
32…ブランケット
34…樹脂槽
Claims (2)
- 光電変換部と、前記光電変換部の主面上に形成され前記光電変換部からキャリアを集電する複数本の細線電極と、前記光電変換部の主面上に形成され前記細線電極からキャリアを集電するバスバー電極とを有する太陽電池基板と、前記太陽電池基板の主面上に形成された表面保護層とを備える太陽電池の製造方法であって、
前記光電変換部の主面上に、前記複数本の細線電極を所定の方向に沿って延びるように形成するとともに、前記バスバー電極を前記細線電極と交差するように形成することにより前記太陽電池基板を形成する工程Aと、
円柱状のブランケットの柱面に樹脂材料を貼付する工程Bと、
前記樹脂材料を前記太陽電池基板の主面上に転写することにより前記表面保護層を形成する工程Cとを備え、
前記工程Cでは、
前記太陽電池基板の主面上において、前記ブランケットを前記所定の方向に沿って回動させることにより、前記ブランケットを前記複数本の細線電極を順次乗り越えさせることなく前記太陽電池基板の主面上に前記表面保護層を形成する
ことを特徴とする太陽電池の製造方法。 - 前記工程Bでは、
前記樹脂材料が前記バスバー電極から離間するように、前記樹脂材料を転写する
ことを特徴とする請求項1に記載の太陽電池の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007219077A JP4578510B2 (ja) | 2007-08-24 | 2007-08-24 | 太陽電池の製造方法 |
US12/195,682 US20090053398A1 (en) | 2007-08-24 | 2008-08-21 | Solar cell manufacturing method |
EP08252799A EP2040311A3 (en) | 2007-08-24 | 2008-08-22 | Solar cell manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007219077A JP4578510B2 (ja) | 2007-08-24 | 2007-08-24 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009054727A JP2009054727A (ja) | 2009-03-12 |
JP4578510B2 true JP4578510B2 (ja) | 2010-11-10 |
Family
ID=40342619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007219077A Expired - Fee Related JP4578510B2 (ja) | 2007-08-24 | 2007-08-24 | 太陽電池の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090053398A1 (ja) |
EP (1) | EP2040311A3 (ja) |
JP (1) | JP4578510B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5072759B2 (ja) * | 2008-07-25 | 2012-11-14 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池モジュールの製造方法 |
US8742531B2 (en) * | 2008-12-08 | 2014-06-03 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Electrical devices including dendritic metal electrodes |
JP6037176B2 (ja) * | 2011-08-31 | 2016-11-30 | パナソニックIpマネジメント株式会社 | 太陽電池モジュールの製造方法 |
WO2020205917A1 (en) * | 2019-04-01 | 2020-10-08 | First Solar, Inc. | Photovoltaic devices with encapsulation layers and systems and methods for forming the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07244298A (ja) * | 1994-03-07 | 1995-09-19 | G T C:Kk | アクティブマトリクス液晶表示装置 |
JP2007044974A (ja) * | 2005-08-09 | 2007-02-22 | Sumitomo Rubber Ind Ltd | 電極線の形成方法および該電極線を備えた電極板 |
JP2007095663A (ja) * | 2005-08-31 | 2007-04-12 | Sanyo Electric Co Ltd | 導電性ペースト、光起電力装置および光起電力装置の製造方法 |
JP2007123240A (ja) * | 2005-09-28 | 2007-05-17 | Sony Corp | 表示装置の製造方法および表示装置 |
JP2007141967A (ja) * | 2005-11-15 | 2007-06-07 | Sanyo Electric Co Ltd | 光起電力素子、光起電力モジュールおよび光起電力素子の製造方法 |
JP2008159794A (ja) * | 2006-12-22 | 2008-07-10 | Sanyo Electric Co Ltd | 太陽電池集電極の形成装置及び太陽電池集電極の形成方法 |
JP2009054722A (ja) * | 2007-08-24 | 2009-03-12 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587376A (en) * | 1983-09-13 | 1986-05-06 | Sanyo Electric Co., Ltd. | Sunlight-into-energy conversion apparatus |
AU2002363298A1 (en) * | 2001-07-20 | 2003-05-12 | Itn Energy Systems, Inc. | Apparatus and method of production of thin film photovoltaic modules |
US7253020B2 (en) * | 2005-01-04 | 2007-08-07 | Omnivision Technologies, Inc | Deuterium alloy process for image sensors |
DE102006041169A1 (de) * | 2005-09-12 | 2007-03-22 | Bernhard Longerich | Beschichtungsverfahren, photovoltaisches Element mit Beschichtungsschicht hergestellt nach diesem Verfahren sowie Vorrichtung zur Durchführung des Verfahrens |
JP2007219077A (ja) | 2006-02-15 | 2007-08-30 | Fuji Xerox Co Ltd | 画像形成装置 |
US20070283996A1 (en) * | 2006-06-13 | 2007-12-13 | Miasole | Photovoltaic module with insulating interconnect carrier |
-
2007
- 2007-08-24 JP JP2007219077A patent/JP4578510B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-21 US US12/195,682 patent/US20090053398A1/en not_active Abandoned
- 2008-08-22 EP EP08252799A patent/EP2040311A3/en not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07244298A (ja) * | 1994-03-07 | 1995-09-19 | G T C:Kk | アクティブマトリクス液晶表示装置 |
JP2007044974A (ja) * | 2005-08-09 | 2007-02-22 | Sumitomo Rubber Ind Ltd | 電極線の形成方法および該電極線を備えた電極板 |
JP2007095663A (ja) * | 2005-08-31 | 2007-04-12 | Sanyo Electric Co Ltd | 導電性ペースト、光起電力装置および光起電力装置の製造方法 |
JP2007123240A (ja) * | 2005-09-28 | 2007-05-17 | Sony Corp | 表示装置の製造方法および表示装置 |
JP2007141967A (ja) * | 2005-11-15 | 2007-06-07 | Sanyo Electric Co Ltd | 光起電力素子、光起電力モジュールおよび光起電力素子の製造方法 |
JP2008159794A (ja) * | 2006-12-22 | 2008-07-10 | Sanyo Electric Co Ltd | 太陽電池集電極の形成装置及び太陽電池集電極の形成方法 |
JP2009054722A (ja) * | 2007-08-24 | 2009-03-12 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2040311A3 (en) | 2011-05-11 |
US20090053398A1 (en) | 2009-02-26 |
JP2009054727A (ja) | 2009-03-12 |
EP2040311A2 (en) | 2009-03-25 |
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