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JP4563557B2 - Illumination optical system of exposure equipment - Google Patents

Illumination optical system of exposure equipment Download PDF

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Publication number
JP4563557B2
JP4563557B2 JP2000217770A JP2000217770A JP4563557B2 JP 4563557 B2 JP4563557 B2 JP 4563557B2 JP 2000217770 A JP2000217770 A JP 2000217770A JP 2000217770 A JP2000217770 A JP 2000217770A JP 4563557 B2 JP4563557 B2 JP 4563557B2
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Japan
Prior art keywords
optical system
exposure apparatus
illumination
illumination optical
light source
Prior art date
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JP2000217770A
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Japanese (ja)
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JP2002031894A (en
Inventor
直樹 内田
芳幸 榎本
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Topcon Corp
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Topcon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Description

【０００１】
【発明の属する技術分野】
この発明は、照明光源から発光され楕円鏡等の非球面鏡で反射された露光光によってマスクのパターンを被転写物体に転写する露光装置の照明光学系に関する。
【０００２】
【従来の技術】
従来の露光装置の照明光学系において、図４に示すように、陰極１３、陽極１４を備え陰極１３の先端（照明光源の中心、アークスポット）で発光する超高圧水銀ランプ１１や、図５に示すように、水銀ランプ１１とは上下が反転した陽極１４´、陰極１３´を備え、陰極１３´の先端（照明光源の中心、アークスポット）で発光するキセノンランプ１１´などが照明光源として用いられている。これらの照明光源は、配光特性が陰極側に偏っているため、水銀ランプ１１の場合は照明光源の中心を通る水平面から上側斜め方向に配光され、キセノンランプ１１´の場合は照明光源の中心を通る水平面から下側斜め方向に配光され、それらに応じて図４、５に示すように、楕円鏡の配光利用角度が照明光源の中心を通る水平面の下側斜め２０度程度あるいは照明光源の中心を通る水平面の上側斜め２０度程度までの水銀ランプあるいはキセノンランプの配光を利用していた（矢印は発光された露光光の放出方向を示し、点線で示す領域は露光光の配光分布を示す）。
【０００３】
【発明が解決しようとする課題】
しかしながら、楕円鏡１２、１２´の配光利用角度が水銀ランプ１１の中心を通る水平面Ｈあるいはキセノンランプ１１´の中心を通る水平面Ｈ´から小さな傾斜角度の配光を用いた場合、水銀ランプ１１あるいはキセノンランプ１１´から発光された露光光の損失が大きく、譬え水銀ランプ１１あるいはキセノンランプ１１´の光量をあげたとしても、より超高出力の水銀ランプ、キセノンランプを必要としなければならない欠点があった。
【０００４】
そこで、本発明は、水銀ランプ１１、キセノンランプ１１´等の照明光源から放射状に発光される露光光のうち、その光源の中心を通る水平面から斜め３０度より大きい角度までの配光を非球面鏡により反射されるように構成したことによって、水銀ランプ、キセノンランプ等の照明光源から発光された露光光の損失を軽減し、露光面の照度を向上させる露光装置の照明光学系を提供することを目的とする。
【０００５】
【課題を解決するための手段】
上記目的を達成するため、発明は以下のとおりである。
【０００６】
本願の請求項１に記載の発明は、照明光源から発光され非球面鏡で反射された露光光によってマスクのパターンを被転写物体に転写する露光装置の照明光学系において、
照明光源の中心を通る水平面から上側或いは下側のいずれか一方での配光を非球面鏡により反射させるように構成し、配光特性の異なる、陽極ＵＰ方式のキセノンランプと、陽極ＤＯＷＮ方式の超高圧水銀ランプの両方の方式に対応可能であり、かつ
照明光源から放射状に発光される露光光のうち、その光源の中心を通る水平面から斜め３０度より大きい角度までの配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系である。
【０００７】
本願の請求項２に記載の発明は、請求項１に記載の露光装置の照明光学系において、
照明光源の中心を通る水平面から斜め上側４０度の角度の配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系である。
【０００８】
本願の請求項３に記載の発明は、請求項１に記載の露光装置の照明光学系において、
照明光源の中心を通る水平面から下側斜め４５度乃至６０度の角度までの配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系である。
【０００９】
また、本願の請求項４に記載の発明は、非球面鏡は楕円鏡であることを特徴とする。
【００１０】
【発明の実施の形態】
この発明は、照明光源から発光された非球面鏡で反射された露光光によってマスクのパターンを被転写物体に転写する露光装置の照明光学系において、照明光源に工夫を凝らし、露光面の照度を向上させるものである。
【００１１】
この発明の露光装置の照明光学系においては、配光特性の異なる、陽極ＵＰ方式のキセノンランプと、陽極ＤＯＷＮ方式の超高圧水銀ランプの両方の方式に対応可能であり、かつ照明光源の中心を通る水平面から斜め３０度より大きい角度（好ましくは斜め４０度あるいは４５度ないし６０度の大きい角度）までの、照明光源からの配光を非球面鏡により反射させるように構成する。
【００１２】
非球面鏡は楕円鏡であることが好ましい。
【００１３】
【実施例】
第１実施例
以下、図面を参照して、本発明の第１実施例を説明する。
【００１４】
図１は、本発明の照明光学系を備えた露光装置を概念的に示す。図２は、図１に示されている超高圧水銀ランプ１１０と、非球面鏡の例示である楕円鏡１２０を拡大して示す。
【００１５】
図１において、プロキシミティ及びコンタクト方式の露光装置１０は、超高圧水銀ランプ１１０、楕円鏡１２０、コールドミラー１３、フライアイレンズ１４、コリメートミラー３０からなる照明光学系を備えている。
【００１６】
超高圧水銀ランプ１１０は、陰極１３０、陽極１４０を備えており、陰極１３０の先端（照明光源の中心、アークスポット）で発光する。
【００１７】
超高圧水銀ランプ１１０から照射された光は、２枚のコールドミラー１３によって方向変換され、フライアイレンズ１４を通って、コリメートミラー３０で反射されて平行光束となる。
【００１８】
平行光束の進行方向には、光軸と垂直になるように露光用パターン１６を備えたマスク（ガラス）１５が支持されており、その先には、基板（レジスト塗布）１８を載せた基板１７が配置されている。
【００１９】
このような露光装置において、図２に示すように、楕円鏡１２０が超高圧水銀ランプ１１０を覆う部分を大きくとる。たとえば、照明光源である超高圧水銀ランプ１１０から発光された露光光が、楕円鏡１２０を覆う部分により、超高圧水銀ランプ１１０の陰極１３０の先端（照明光源の中心）Ｏを通る水平面Ｈの下側４０度まで取り込まれるように構成する。
【００２０】
第２実施例
第２実施例は、図３に示すようなキセノンランプ１１０´を照明光源として用いた露光装置である。
【００２１】
露光装置のその他の構成は、第１実施例と同様であるので、説明を省略する。
【００２２】
キセノンランプ１１０´は、超高圧水銀ランプ１１０の陰極・陽極の位置が上下入れ替わった陰極１３０´、陽極１４０´を備えており、陰極１３０´の先端（照明光源の中心、アークスポット）で発光する。
【００２３】
このような露光装置において、図３に示すように、楕円鏡１２０´がキセノンランプ１１０´を覆う部分を大きくとる。たとえば、照明光源であるキセノンランプ１１０´から発光された露光光が、楕円鏡１２０´を覆う部分により、キセノンランプ１１０´の陰極１３０´の先端（照明光源の中心）Ｏを通る水平面Ｈ´の上側４０度まで取り込まれるように構成する。
【００２４】
なお、本発明は、前述の実施例に限定されず、超高圧水銀ランプの陰極を通る水平面から下側斜め４５度乃至６０度の大きな角度までの配光を楕円鏡により反射させるように構成することができ、同様にキセノンランプの陰極を通る水平面から上側斜め４５度乃至６０度の大きな角度までの配光を楕円鏡により反射させるように構成することができる。
【００２５】
【発明の効果】
本発明は、照明光源から発光され非球面鏡で反射された露光光によってマスクのパターンを被転写物体に転写する露光装置の照明光学系において、照明光源から放射状に発光される露光光のうち、その光源の中心を通る水平面から斜め３０度より大きい角度までの配光を非球面鏡により反射させるように構成したことを特徴としているので、例えば超高圧水銀ランプやキセノンランプ等の照明光源から発光された露光光の損失を軽減し、露光面の照度を向上させることができる。たとえば、露光面の照度を従来のものに比べて、少なくとも１０％露光面の照度を向上させることができる。
【００２６】
また本発明は、陽極ＵＰ方式のキセノンランプ、陽極ＤＯＷＮ方式の超高圧水銀ランプ両方式の配光特性にも対応可能であり、これらの方式に対応させて光学系を変更する必要がないので、製造コストを軽減することができる効果を奏する。
【図面の簡単な説明】
【図１】 本発明の第１実施例を示しており、照明光学系に水銀ランプを備えた露光装置を概念的に示す概略図。
【図２】 図１に示されている超高圧水銀ランプと楕円鏡を拡大して示す説明図。
【図３】 本発明の第２実施例を示しており、キセノンランプを照明光源として用いた露光装置を示す。
【図４】 従来の露光装置の一例を示す。
【図５】 従来の露光装置の他の例を示す。
【符号の説明】
１０ 露光装置
１３ コールドミラー
１４ フライアイレンズ
１５ マスク（ガラス）
１６ パターン
１７ 基板
１８ 基板（レジスト塗布）
３０ コリメートミラー
１１０ 超高圧水銀ランプ
１２０ 楕円鏡
Ｈ 超高圧水銀ランプの中心を通る水平線
Ｏ 超高圧水銀ランプの中心[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an illumination optical system of an exposure apparatus that transfers a mask pattern onto an object to be transferred by exposure light emitted from an illumination light source and reflected by an aspherical mirror such as an elliptical mirror.
[0002]
[Prior art]
In an illumination optical system of a conventional exposure apparatus, as shown in FIG. 4, an ultrahigh pressure mercury lamp 11 having a cathode 13 and an anode 14 and emitting light at the tip of the cathode 13 (center of illumination light source, arc spot), and FIG. As shown, the mercury lamp 11 includes an anode 14 'and a cathode 13' that are turned upside down, and a xenon lamp 11 'that emits light at the tip of the cathode 13' (center of illumination light source, arc spot) is used as an illumination light source. It has been. Since these illumination light sources have a light distribution characteristic biased toward the cathode side, in the case of the mercury lamp 11, the light is distributed obliquely upward from the horizontal plane passing through the center of the illumination light source, and in the case of the xenon lamp 11 ′, the illumination light source As shown in FIGS. 4 and 5, the light distribution use angle of the elliptical mirror is about 20 degrees below the horizontal plane below the horizontal plane passing through the center of the illumination light source. The light distribution of the mercury lamp or xenon lamp up to about 20 degrees diagonally above the horizontal plane passing through the center of the illumination light source was used (the arrow indicates the emission direction of the emitted exposure light, and the dotted line indicates the exposure light Shows light distribution).
[0003]
[Problems to be solved by the invention]
However, when the light distribution use angle of the elliptical mirrors 12 and 12 'is a light distribution with a small inclination angle from the horizontal plane H passing through the center of the mercury lamp 11 or the horizontal plane H' passing through the center of the xenon lamp 11 ', the mercury lamp 11 Alternatively, the loss of exposure light emitted from the xenon lamp 11 ′ is large, and even if the light quantity of the mercury lamp 11 or the xenon lamp 11 ′ is increased, a mercury lamp or xenon lamp with a higher output must be required. was there.
[0004]
In view of this, the present invention provides an aspherical mirror that distributes light from an illumination light source such as a mercury lamp 11 or a xenon lamp 11 'radially emitted from a horizontal plane passing through the center of the light source to an angle greater than 30 degrees obliquely. By providing an illumination optical system for an exposure apparatus that reduces the loss of exposure light emitted from an illumination light source such as a mercury lamp or a xenon lamp and improves the illuminance of the exposure surface. Objective.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the invention is as follows .
[0006]
The invention according to claim 1 of the present application relates to an illumination optical system of an exposure apparatus that transfers a mask pattern onto an object to be transferred by exposure light emitted from an illumination light source and reflected by an aspheric mirror.
The light distribution on either the upper side or the lower side from the horizontal plane passing through the center of the illumination light source is reflected by the aspherical mirror, and the anode UP type xenon lamp and the anode DOWN type super Compatible with both high-pressure mercury lamp systems, and
Illumination of an exposure apparatus characterized in that, of exposure light emitted radially from an illumination light source, light distribution from a horizontal plane passing through the center of the light source to an angle greater than 30 degrees obliquely is reflected by an aspherical mirror. an optical system.
[0007]
Invention of Claim 2 of this application WHEREIN: In the illumination optical system of the exposure apparatus of Claim 1,
An illumination optical system of an exposure apparatus, wherein a light distribution at an angle of 40 degrees obliquely above a horizontal plane passing through the center of the illumination light source is reflected by an aspherical mirror .
[0008]
Invention of Claim 3 of this application WHEREIN: In the illumination optical system of the exposure apparatus of Claim 1,
An illumination optical system of an exposure apparatus, wherein a light distribution from a horizontal plane passing through the center of the illumination light source to a lower oblique angle of 45 to 60 degrees is reflected by an aspherical mirror .
[0009]
The invention of claim 4 of the present application is a non-spherical mirror is characterized by an elliptical mirror.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
In the illumination optical system of an exposure apparatus that transfers a mask pattern onto an object to be transferred by exposure light reflected by an aspherical mirror emitted from the illumination light source, the illumination light source is devised to improve the illuminance of the exposure surface. It is something to be made.
[0011]
The illumination optical system of the exposure apparatus of the present invention is compatible with both anode UP type xenon lamps and anode DOWN type ultra-high pressure mercury lamps having different light distribution characteristics, and the center of the illumination light source. an angle greater than the diagonal 30 degrees from the horizontal plane passing through the up (preferably greater oblique angle 40 degrees or 4 5 degrees to 60 degrees), and configured to reflect light distribution from the illumination light source by the non-spherical mirror.
[0012]
The aspherical mirror is preferably an elliptical mirror.
[0013]
【Example】
First Embodiment Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
[0014]
FIG. 1 conceptually shows an exposure apparatus provided with the illumination optical system of the present invention. FIG. 2 is an enlarged view of the ultrahigh pressure mercury lamp 110 shown in FIG. 1 and an elliptical mirror 120 which is an example of an aspherical mirror.
[0015]
In FIG. 1, the proximity and contact type exposure apparatus 10 includes an illumination optical system including an ultrahigh pressure mercury lamp 110, an elliptical mirror 120, a cold mirror 13, a fly-eye lens 14, and a collimating mirror 30.
[0016]
The ultra-high pressure mercury lamp 110 includes a cathode 130 and an anode 140, and emits light at the tip of the cathode 130 (center of illumination light source, arc spot).
[0017]
The light emitted from the ultra high pressure mercury lamp 110 is redirected by the two cold mirrors 13, passes through the fly-eye lens 14, is reflected by the collimator mirror 30, and becomes a parallel light beam.
[0018]
A mask (glass) 15 having an exposure pattern 16 is supported in the traveling direction of the parallel light flux so as to be perpendicular to the optical axis, and a substrate 17 on which a substrate (resist coating) 18 is placed is placed on the mask 15. Is arranged.
[0019]
In such an exposure apparatus, as shown in FIG. 2, a portion where the elliptical mirror 120 covers the ultrahigh pressure mercury lamp 110 is made large. For example, the exposure light emitted from the ultra-high pressure mercury lamp 110 that is an illumination light source is below the horizontal plane H passing through the tip (the center of the illumination light source) O of the cathode 130 of the ultra-high pressure mercury lamp 110 by a portion covering the elliptical mirror 120. The side is configured to be taken up to 40 degrees.
[0020]
Second Embodiment The second embodiment is an exposure apparatus using a xenon lamp 110 'as shown in FIG. 3 as an illumination light source.
[0021]
Since the other configuration of the exposure apparatus is the same as that of the first embodiment, description thereof is omitted.
[0022]
The xenon lamp 110 ′ includes a cathode 130 ′ and an anode 140 ′ in which the positions of the cathode and anode of the ultrahigh pressure mercury lamp 110 are switched up and down, and emits light at the tip of the cathode 130 ′ (center of illumination light source, arc spot). .
[0023]
In such an exposure apparatus, as shown in FIG. 3, a portion where the elliptical mirror 120 ′ covers the xenon lamp 110 ′ is made large. For example, the exposure light emitted from the xenon lamp 110 ′, which is an illumination light source, passes through the tip (the center of the illumination light source) O of the cathode 130 ′ of the xenon lamp 110 ′ by a portion covering the elliptical mirror 120 ′. It is configured to be taken in up to 40 degrees on the upper side.
[0024]
The present invention is not limited to the above-described embodiment, and is configured so that the light distribution from the horizontal plane passing through the cathode of the ultra-high pressure mercury lamp to a large angle of 45 degrees to 60 degrees on the lower side is reflected by the elliptical mirror. Similarly, the light distribution from the horizontal plane passing through the cathode of the xenon lamp to a large angle of 45 to 60 degrees on the upper side can be reflected by the elliptical mirror.
[0025]
【The invention's effect】
The present invention provides an illumination optical system of an exposure apparatus that transfers a mask pattern onto an object to be transferred by exposure light emitted from an illumination light source and reflected by an aspherical mirror. Of the exposure light emitted radially from the illumination light source, Since the light distribution from the horizontal plane passing through the center of the light source to an angle larger than 30 degrees obliquely is reflected by the aspherical mirror, it is emitted from an illumination light source such as an ultra-high pressure mercury lamp or a xenon lamp. The loss of exposure light can be reduced and the illuminance on the exposure surface can be improved. For example, the illuminance on the exposed surface can be improved by at least 10% compared to the conventional illuminance on the exposed surface.
[0026]
In addition, the present invention can correspond to the light distribution characteristics of both the anode UP type xenon lamp and the anode DOWN type ultra-high pressure mercury lamp type, and it is not necessary to change the optical system corresponding to these methods. There exists an effect which can reduce manufacturing cost.
[Brief description of the drawings]
FIG. 1 is a schematic view conceptually showing an exposure apparatus having a mercury lamp in an illumination optical system, showing a first embodiment of the present invention.
FIG. 2 is an explanatory view showing, on an enlarged scale, an ultrahigh pressure mercury lamp and an elliptical mirror shown in FIG.
FIG. 3 shows a second embodiment of the present invention, and shows an exposure apparatus using a xenon lamp as an illumination light source.
FIG. 4 shows an example of a conventional exposure apparatus.
FIG. 5 shows another example of a conventional exposure apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Exposure apparatus 13 Cold mirror 14 Fly eye lens 15 Mask (glass)
16 pattern 17 substrate 18 substrate (resist coating)
30 Collimating mirror 110 Super high pressure mercury lamp 120 Elliptical mirror H Horizontal line passing through the center of super high pressure mercury lamp O Center of super high pressure mercury lamp

Claims (4)

照明光源から発光され非球面鏡で反射された露光光によってマスクのパターンを被転写物体に転写する露光装置の照明光学系において、
照明光源の中心を通る水平面から上側或いは下側のいずれか一方での配光を非球面鏡により反射させるように構成し、配光特性の異なる、陽極ＵＰ方式のキセノンランプと、陽極ＤＯＷＮ方式の超高圧水銀ランプの両方の方式に対応可能であり、かつ
照明光源から放射状に発光される露光光のうち、その光源の中心を通る水平面から斜め３０度より大きい角度までの配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系。In the illumination optical system of the exposure apparatus that transfers the mask pattern to the transfer target object by the exposure light emitted from the illumination light source and reflected by the aspherical mirror,
The light distribution on either the upper side or the lower side from the horizontal plane passing through the center of the illumination light source is reflected by the aspherical mirror , and the anode UP type xenon lamp and the anode DOWN type super Applicable to both types of high-pressure mercury lamps, and of the exposure light emitted radially from the illumination light source, the light distribution from the horizontal plane passing through the center of the light source to an angle greater than 30 degrees obliquely is reflected by the aspherical mirror An illumination optical system of an exposure apparatus, characterized in that it is configured to be 請求項１に記載の露光装置の照明光学系において、
照明光源の中心を通る水平面から斜め上側４０度の角度の配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系。The illumination optical system of the exposure apparatus according to claim 1,
An illumination optical system of the exposure apparatus characterized by being configured so as to reflect the non-spherical mirror the light distribution angle of the oblique upper 40 degrees from the horizontal plane passing through the center of the illumination source. 請求項１に記載の露光装置の照明光学系において、
照明光源の中心を通る水平面から下側斜め４５度乃至６０度の角度までの配光を非球面鏡により反射させるように構成したことを特徴とする露光装置の照明光学系。The illumination optical system of the exposure apparatus according to claim 1,
An illumination optical system of the exposure apparatus characterized by being configured so as to reflect the non-spherical mirror the light distribution to the angle of the lower diagonal 4 5 degrees to 60 degrees from the horizontal plane passing through the center of the illumination source. 請求項１乃至３のいずれか１項に記載の露光装置の照明光学系において、
非球面鏡は楕円鏡であることを特徴とする露光装置の照明光学系。In the illumination optical system of the exposure apparatus according to any one of claims 1 to 3 ,
Aspheric mirror illumination optical system of the exposure apparatus, characterized in that an elliptical mirror.
JP2000217770A 2000-07-18 2000-07-18 Illumination optical system of exposure equipment Expired - Fee Related JP4563557B2 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376429A (en) * 1986-09-19 1988-04-06 Nikon Corp Optical equipment for illumination
JPH0545586A (en) * 1991-08-09 1993-02-23 Sony Corp Light emission device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS422233Y1 (en) * 1964-10-02 1967-02-09
GB2079435B (en) * 1980-07-03 1984-05-23 Gen Electric Reflector lamp
JPS58160914A (en) * 1982-03-18 1983-09-24 Nippon Kogaku Kk <Nikon> Mirror converging type optical illumination system
US4498742A (en) * 1981-09-10 1985-02-12 Nippon Kogaku K.K. Illumination optical arrangement
JPS63162320U (en) * 1987-04-10 1988-10-24
NL8901077A (en) * 1989-04-28 1990-11-16 Koninkl Philips Electronics Nv OPTICAL EXPOSURE SYSTEM AND PROJECTION DEVICE EQUIPPED WITH SUCH A SYSTEM.
EP0519112B1 (en) * 1991-06-21 1996-03-13 Tetsuhiro Kano Reflector and method of generating a reflector shape
JP3188764B2 (en) * 1992-08-21 2001-07-16 株式会社トプコン Illumination optical system
US5636003A (en) * 1992-11-05 1997-06-03 Nikon Corporation Illumination optical apparatus and scanning exposure apparatus
JPH10288757A (en) * 1997-02-13 1998-10-27 Canon Inc Illuminator and projecting device
JPH10241437A (en) * 1997-02-27 1998-09-11 Canon Inc Light source device, illumination system, and image projection device
JPH1112579A (en) * 1997-06-26 1999-01-19 Motoda Electron Co Ltd Pyrolysis for preventing adhesion and solidification of polymeric substance or the like in thermal decomposition treatment
JP2001154270A (en) * 1999-11-30 2001-06-08 Ushio Inc Light source device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376429A (en) * 1986-09-19 1988-04-06 Nikon Corp Optical equipment for illumination
JPH0545586A (en) * 1991-08-09 1993-02-23 Sony Corp Light emission device

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