JP4553781B2 - Substrate processing method, substrate processing apparatus, and substrate processing system - Google Patents

Description

  The present invention provides a rinsing process by supplying a rinsing liquid to various substrates (hereinafter simply referred to as “substrates”) such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, and substrates for optical disks. The present invention relates to a substrate processing method, a substrate processing apparatus, and a substrate processing system.

  The manufacturing process of an electronic component such as a semiconductor device or a liquid crystal display device includes a step of repeatedly forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of the substrate. Here, in order to perform fine processing satisfactorily, it is necessary to keep the substrate surface clean, and the substrate is subjected to a cleaning process as necessary (see Patent Document 1). In the invention described in Patent Document 1, after cleaning the substrate surface with a processing liquid suitable for cleaning processing, that is, the cleaning liquid, the processing liquid remaining on the substrate surface is rinsed and removed using pure water as a rinsing liquid. Yes. Further, after the rinsing process is completed, the rinsing liquid remaining on the substrate surface is shaken off and dried by rotating the substrate at a high speed.

Japanese Patent Laid-Open No. 5-29292 (paragraphs [0013] to [0015])

  However, when pure water is used as the rinsing liquid, the dissolved oxygen contained in the pure water oxidizes all or part of the substrate surface cleaned with the cleaning liquid, and an oxide film is formed on the substrate surface. There was a problem. Therefore, in order to solve this problem, a measure has been taken to lower the dissolved oxygen concentration of the rinse liquid used as the rinse liquid.

  However, in the actual rinsing process, since the rinsing liquid is discharged from the rinsing nozzle toward the substrate surface, the rinsing liquid is exposed to the air as soon as it is discharged from the nozzle. For this reason, even if the dissolved oxygen concentration in the rinse liquid is lowered in advance, oxygen in the air dissolves in the rinse liquid immediately after discharge from the nozzle, and the dissolved oxygen concentration in the rinse liquid rapidly increases. Further, the penetration of oxygen present in the air into the rinsing liquid in this way continues not only immediately after discharge from the nozzle, but also continues at a predetermined rising speed thereafter. Therefore, it is important to reduce the amount of oxygen dissolved in the rinse liquid after being discharged from the nozzle. That is, reducing the dissolved oxygen concentration in the rinsing liquid during the period from the start of the rinsing process to the end of the drying process (for example, about 30 seconds) is accompanied with the rinsing process while the substrate surface is wet with the rinsing liquid. This is very important in preventing oxidation of the substrate surface. However, no effective countermeasures have been conventionally taken in this regard, leaving much room for improvement.

  In particular, when a substrate treatment is performed to remove the Si oxide film on the Si substrate or the poly-Si substrate with an HF-based chemical solution, a kind of defect called a watermark, that is, a substrate surface that has undergone a drying process is formed. Spots seen can be a problem. That is, as with the oxidation of the substrate surface, when a watermark is generated on the substrate surface, various troubles such as an increase in contact resistance and pattern defects are caused. This watermark is said to be caused by elution of Si from the substrate surface, and in order to prevent the occurrence of the watermark, it is possible to suppress how the elution of Si from the substrate surface accompanying the rinsing process can be suppressed. Is important. Therefore, it is necessary to take preventive measures by sufficiently considering not only the oxidation of the substrate surface but also the generation of watermarks.

  The present invention has been made in view of the above problems, and provides a substrate processing method, a substrate processing apparatus, and a substrate processing system capable of preventing the generation of an oxide film and a watermark on a substrate accompanying a rinsing process with a rinsing liquid. For the purpose.

The substrate processing method and the substrate processing apparatus according to the present invention are configured as follows in order to achieve the above-described object. One aspect of a substrate processing method according to the present invention includes a wet processing step of supplying a processing liquid to a substrate and performing a predetermined wet processing, a rinsing liquid generating step of generating a rinsing liquid, and one end of the wet processing step after the wet processing step. A rinsing step of supplying a rinsing liquid to the nozzle along the supply path connected to the nozzle, supplying the rinsing liquid from the nozzle to the substrate, and rinsing the substrate with the rinsing liquid. Pure water fed from the other end side of the supply path is degassed at a predetermined degassing position on the supply path, and nitrogen is dissolved on one end side of the degassing position on the supply path with respect to the degassed pure water . Nitrogen is dissolved at the position to generate a nitrogen-rich fluid, and a low-pH substance whose pH is lower than that of pure water is mixed with the nitrogen-rich fluid at the mixing position on one end side of the nitrogen dissolving position on the supply path. It was there in the step of generating a rinse solution It is characterized by a door. Also, one aspect of the substrate processing apparatus according to the present invention is a degassing method for degassing pure water supplied from a pure water supply source along a supply path having one end connected to the nozzle and flowing toward the nozzle. A nitrogen dissolving means that is disposed on one end side of the degassing means on the supply path and that dissolves nitrogen in the pure water degassed by the degassing means to generate a nitrogen-rich fluid; and PH which is arranged on one end side of the nitrogen dissolving means on the path and adjusts the pH of the fluid flowing through the supply path by mixing a low pH substance whose pH is lower than that of pure water with the fluid generated by the nitrogen dissolving means Adjusting means, and a fluid whose pH is adjusted by the pH adjusting means is sent as a rinsing liquid to the nozzle along the supply path and supplied from the nozzle to the substrate, and the substrate is rinsed with the rinsing liquid.

According to such a configuration, the rinsing liquid is mixed with a low pH substance having a pH lower than that of pure water and nitrogen is dissolved. That is, degassed pure water, a mixture of low pH material to the nitrogen-rich pure water deionized water that has been deaerated after dissolving the nitrogen, pH adjusted flow body is produced as a rinse . The substrate is rinsed by supplying the rinse liquid from the nozzle to the substrate. In this way, by adjusting the pH of the rinsing solution and dissolving nitrogen, it is possible to effectively reduce the elution of oxidizable substances from the substrate and reduce dissolved oxygen, preventing the generation of oxide films and watermarks on the substrate during the rinsing process. Is done. The operational effects will be described in detail later with reference to specific experiments and verification results.

Moreover, it is preferable to set it as 2-6 from various verification as pH of the liquid mixture as a rinse liquid .

Moreover , the pure water which flows through a supply path is deaerated in the other end side of a supply path | route with respect to the nitrogen dissolution position and nitrogen melt | dissolution means in which a nitrogen dissolution process is performed among supply paths. Ie, against the pure water supplied to the mixing position subjected to degassing treatment is effective in achieving the prevention of the occurrence of the oxide film and the watermark. Thus, the dissolved oxygen is reduced in advance before the nitrogen dissolution treatment. In addition, it is desirable that the position for performing the degassing process and the degassing means be close to the mixing position and the nitrogen dissolving position. The reason is as follows. Conventionally, deaeration treatment of pure water to reduce the dissolved oxygen concentration has been frequently used. However, little consideration is given to the fact that oxygen is dissolved in the degassed fluid as time elapses from the degassing process, and as a result, the dissolved oxygen concentration increases. Therefore, by placing the degassing position close to the mixing position and the nitrogen dissolving position, the time elapsed from the degassing process of the fluid (pure water or liquid mixture) flowing through the supply path can be shortened. The dissolved oxygen concentration of the rinse solution thus obtained can be further reduced.

  Further, the rinsing process may be performed in an inert gas atmosphere. By adopting such a configuration, the oxygen concentration of the rinse liquid and the ambient atmosphere of the substrate is lowered. Therefore, the oxygen itself that can be dissolved in the rinsing liquid is reduced, and the dissolved oxygen concentration of the rinsing liquid in the period from when the rinsing liquid is discharged from the nozzle toward the substrate until it is removed from the substrate (for example, about 30 seconds). Can be further suppressed. Such an inert gas atmosphere is, for example, an atmosphere blocking unit that is spaced from the substrate while facing the substrate to which the rinse liquid is supplied, and an inert gas in a space formed between the atmosphere blocking unit and the substrate. This is realized by providing an inert gas supply means for supplying.

In addition, a substrate processing system according to the present invention includes a pure water supply unit that supplies pure water, and a substrate processing unit that includes a substrate processing unit that performs a rinsing process on the substrate using pure water supplied from the pure water supply unit. In order to achieve the above-described object, the substrate processing unit includes a nozzle and pure water that is supplied from the pure water supply unit and flows toward the nozzle along a supply path having one end connected to the nozzle. Nitrogen is disposed on one end side of the deaeration means on the supply path and the deaeration means on the supply path, and nitrogen is dissolved in the pure water degassed by the deaeration means to generate a nitrogen-rich fluid Dissolving means and a fluid flowing through the supply path by mixing a low pH substance having a pH lower than that of pure water into the fluid generated by the nitrogen dissolving means and disposed at one end of the nitrogen dissolving means on the supply path. pH And a pH adjusting means for adjusting the unit body, and supplied from the nozzle to the substrate by feeding to the nozzle along the feed path the pH adjusting fluid by pH adjustment means as a rinse, rinsing the substrate by the rinse liquid Has been given.

In the substrate processing system configured as described above, pure water is supplied from the pure water supply unit to the substrate processing unit, the pure water is degassed in the substrate processing unit, and the deionized pure water is purified with respect to the pure water. A rinse solution in which nitrogen is dissolved while a low pH substance having a lower pH is mixed is produced. That is, in the substrate processing unit, pure water is degassed , nitrogen is dissolved in the degassed pure water, a low pH substance is mixed in the nitrogen-rich pure water, and the pH-adjusted nitrogen-rich A fluid is generated as a rinse liquid. The substrate is rinsed by supplying the rinse liquid from the nozzle to the substrate. In this way, by adjusting the pH of the rinsing solution and dissolving nitrogen, it is possible to effectively reduce the elution of oxidizable substances from the substrate and reduce dissolved oxygen, thereby preventing the generation of oxide films and watermarks on the substrate during the rinsing process. can do.

  According to the present invention, the rinsing liquid used for the rinsing process is mixed with a low pH substance having a pH lower than that of pure water, and nitrogen is dissolved or a deaeration process is performed. For this reason, it is possible to prevent the substrate from being oxidized by the action of lowering the dissolved oxygen concentration of the rinse liquid and the action of reducing the elution of the substance to be oxidized, and to prevent the generation of the watermark.

<Si elution amount with respect to pH of the rinsing solution and dissolved oxygen concentration>
The inventor of the present application conducted various experiments and verifications in order to ascertain the generation mechanism of the oxide film and the watermark on the substrate accompanying the rinse treatment with the rinse solution. As one of them, the influence of the pH of the rinse solution and the dissolved oxygen concentration on the generation of oxide films and watermarks was investigated. More specifically, a silicon substrate was selected as a representative example of the substrate, and two types of rinse solutions having different dissolved oxygen concentrations were prepared, and the elution amount of Si was evaluated while changing the pH for each.

  FIG. 1 is a graph showing the relationship between the pH of the rinse solution and the amount of dissolved oxygen with respect to the amount of dissolved oxygen. Specifically, pure water dissolved in nitrogen (hereinafter referred to as “nitrogen-dissolved water”) and pure water not dissolved in nitrogen (purified water supplied from the utility of the factory, hereinafter referred to as “equipment supply water”) For the types, rinse solutions having different pH values are prepared, the amount of Si eluted in each rinse solution is determined, and the results are shown. The experimental results in the figure can be obtained by the following procedure. First, a HF-treated Si substrate (200 mm diameter poly-Si substrate) set in a container is prepared for each rinse solution. Next, three rinse solutions (100 cc) having different pHs respectively prepared for two types of nitrogen-dissolved water (nitrogen-dissolved amount: 20 ppb) and equipment supply water are paddled on the Si substrate set in each container. Then, after the elution time of 5 minutes has elapsed, the rinse liquid is recovered from the Si substrate for each container. The elution amount of Si in each rinse solution thus collected is measured using a Varian flameless atomic absorption spectrometer (FL-AAS Varian Spectra AA880Z), thereby obtaining the elution amount of Si in each rinse solution. .

  As is clear from FIG. 1, the nitrogen-dissolved rinse solution (the rinse solution prepared based on the nitrogen-dissolved water) is changed into the rinse solution not dissolved in nitrogen (the rinse solution prepared based on the equipment supply water). Compared with the pH, the amount of Si eluted from the substrate surface is small. That is, it is understood that elution of Si is suppressed by dissolving nitrogen in the rinse liquid to reduce the dissolved oxygen concentration of the rinse liquid. It can also be seen that the higher the pH of the rinsing solution (the alkaline region), the higher the etching rate for the Si substrate, and the greater the elution of Si from the substrate surface. For this reason, the elution of Si can be suppressed by using a rinse liquid having a lowered pH. Therefore, the elution of Si can be effectively suppressed by using a rinse solution in which the nitrogen is dissolved and the pH is lowered.

  Furthermore, the following advantages can be obtained by combining the lowering of the pH of the rinsing solution and the nitrogen dissolution. That is, although the elution of Si from the substrate surface can be further suppressed by lowering the pH of the rinse solution, the substrate is corroded if the pH is lowered too much. In other words, there is a limit to the pH reduction of the rinsing liquid, but by dissolving nitrogen in the rinsing liquid and reducing the dissolved oxygen concentration in the rinsing liquid, the elution of Si to the extent that can not be realized due to the problem of corrosion only by pH reduction. Can be suppressed. Therefore, by using such a rinsing liquid, it is possible to prevent generation of an oxide film on the substrate, and effectively suppress elution of Si from the surface of the substrate and prevent generation of a watermark.

  In addition, as a method of reducing the dissolved oxygen concentration of the rinsing liquid, it is possible to reduce dissolved oxygen in the rinsing liquid by dissolving nitrogen in the rinsing liquid and degassing the rinsing liquid. For this reason, it is possible to prevent the generation of an oxide film on the substrate and to effectively suppress the elution of Si from the substrate surface by reducing the pH of the rinse solution and using the degassed rinse solution. .

  In view of the above knowledge, the combination of pH adjustment of the rinse liquid and reduction of dissolved oxygen prevents the generation of an oxide film or a watermark on the substrate. Hereinafter, specific embodiments will be described in detail with reference to the drawings.

<First Embodiment>
FIG. 2 is a cross-sectional view showing the overall configuration of the substrate processing system according to the first embodiment of the present invention. FIG. 3 is a block diagram showing a control configuration of the substrate processing system of FIG. The substrate processing system includes a substrate processing apparatus (substrate processing unit) 100 and a pure water supply unit 200 (pure water supply unit) that is provided separately from the substrate processing apparatus 100 and supplies pure water to the apparatus 100. I have. As shown in FIG. 2, the substrate processing apparatus 100 performs film removal processing, rinsing processing, and drying processing on the substrate W in the same processing unit main body 101 while the substrate W is held by the spin chuck 1. Execute. Pure water used in the substrate processing apparatus 100 is supplied from the pure water supply unit 200 to the substrate processing apparatus 100 via the pipe 201.

  The spin chuck 1 includes a disk-shaped base member 2 that also functions as a blocking member on the back side of the substrate, and three or more holding members 3 provided on the upper surface thereof. Each of these holding members 3 includes a support portion 3a for placing and supporting the outer peripheral end portion of the substrate W from below, and a regulating portion 3b for regulating the position of the outer peripheral edge of the substrate W. These holding members 3 are provided in the vicinity of the outer peripheral end of the base member 2. In addition, each regulating portion 3b can take an operation state in which the substrate W is held in contact with the outer peripheral edge of the substrate W and a non-operation state in which the holding of the substrate W is released away from the outer peripheral edge of the substrate W. After the substrate W is loaded / unloaded to / from the support portion 3a by a transfer robot (not shown) in a non-acting state, the substrate W is placed on the support portion 3a with the surface facing up. The substrate W is held by the spin chuck 1 by switching each restricting portion 3b to the operating state. The operation of the holding member 3 (the restricting portion 3b) can be realized by, for example, a link mechanism disclosed in Japanese Patent Laid-Open No. 63-1553839.

  An upper end portion of the rotating shaft 4 is attached to the lower surface of the base member 2. A pulley 5a is fixed to the lower end portion of the rotating shaft 4, and a rotational driving force of the motor 5 is interposed between the pulley 5a and a pulley 5b fixed to the rotating shaft of the motor 5 via a belt 5c. It is configured to be transmitted to the rotating shaft 4. Therefore, the substrate W held on the spin chuck 1 is rotated around the center of the substrate W by driving the motor 5.

  A nozzle 6 is provided at the center of the base member 2. The nozzle 6 is connected to a liquid supply section 50 for supplying a processing liquid and a rinsing liquid to the back surface of the substrate via a pipe 7 inscribed along the central axis of the hollow rotating shaft 4 and the pipe 8. The configuration and operation of the liquid supply unit 50 will be described later.

  In addition, an opening 16 is provided in the center of the base member 2 coaxially with the nozzle 6. The opening 16 is connected to a gas supply unit 20 through a hollow part 17 provided in the rotary shaft 4 coaxially with the pipe 7 and a pipe 19 having an opening / closing valve 18 interposed therebetween. Therefore, by opening the on-off valve 18, an inert gas (for example, nitrogen gas) is supplied between the base member 2 that functions as the “atmosphere blocking means” of the present invention and the back surface of the substrate W. The space can be purged with an inert gas atmosphere.

  Above the spin chuck 1, a blocking member 21 that functions as the “atmosphere blocking means” of the present invention is provided. The blocking member 21 is attached to the lower end portion of the suspension arm 22 disposed in the vertical direction. In addition, a motor 23 is provided at the upper end of the suspension arm 22, and by driving the motor 23, the blocking member 21 is rotated about the suspension arm 22. The rotation axis 4 of the rotation axis 4 of the spin chuck 1 and the rotation axis of the suspension arm 22 coincide with each other and are held by the base member 2 and the blocking member 21 as the atmosphere blocking means and the spin chuck 1. The substrate W is rotated about the same axis. The motor 23 is configured to rotate the blocking member 21 in the same direction as the spin chuck 1 (the substrate W held by the spin chuck 1) and at substantially the same rotational speed.

  A nozzle 25 is provided at the center of the blocking member 21. The nozzle 25 is connected to a liquid supply unit 70 for supplying a processing liquid and a rinsing liquid to the substrate surface via a pipe 26 provided along the central axis of the hollow suspension arm 22 and a pipe 27. The configuration and operation of the liquid supply unit 70 will be described in detail later.

  In addition, an opening 35 is provided at the center of the blocking member 21 coaxially with the nozzle 25. The opening 35 is connected to a gas supply unit 39 through a hollow portion 36 provided in the suspension arm 22 coaxially with the tube 26 and a tube 38 having an opening / closing valve 37 interposed therebetween. Then, in the state where the blocking member 21 is disposed close to the surface of the substrate W held by the spin chuck 1, the on-off valve 37 is opened, so that an inert gas is interposed between the blocking member 21 and the surface of the substrate W. (For example, nitrogen gas) is supplied, and the space can be purged with an inert gas atmosphere. Thus, in this embodiment, the “inert gas supply means” is configured by the hollow portions 17 and 36, the on-off valves 18 and 37, the pipes 19 and 38, and the gas supply portions 20 and 39.

  A cup 40 is disposed around the spin chuck 1 to prevent the processing liquid from scattering around the spin chuck 1. The processing liquid collected in the cup 40 is drained out of the apparatus and is not shown in the figure, but is stored in a tank provided below the cup 40.

  Next, the configuration of the liquid supply units 50 and 70 will be described. Since the liquid supply units 50 and 70 have the same configuration, the configuration of one liquid supply unit 50 will be described here, and the configuration of the other liquid supply unit 70 will be denoted by a corresponding reference numeral. Description is omitted. The liquid supply unit 50 is disposed in the processing unit main body 101, and includes a hydrofluoric acid supply source 51 that supplies hydrofluoric acid and a hydrochloric acid supply source 52a that supplies hydrochloric acid (corresponding to the “low pH substance” of the present invention). And a nitrogen dissolving unit 58. As the nitrogen dissolving unit 58, for example, a bubbling device using a tank or an existing device using a hollow fiber is used. The hydrofluoric acid supply source 51 is connected to the mixing unit 55 via a pipe 54 having an on-off valve 53 interposed therebetween, while a pure water supply unit 200 provided separately from the processing unit main body 101 is connected via the pipe 201. And connected to the inlet of the nitrogen dissolving unit 58. Further, the nitrogen dissolving unit 58 is provided with another inlet, and is connected to a nitrogen gas supply source (not shown). And the nitrogen gas from a nitrogen gas supply source is dissolved with respect to the pure water from the pure water supply part 200, and nitrogen-rich pure water is produced | generated. Further, the outlet of the nitrogen dissolving unit 58 is connected to the mixing unit 55 via a pipe 57 having an opening / closing valve 56 and a mixing unit 52b. The mixing unit 52b is connected to a hydrochloric acid supply source 52a via a pipe 52d provided with an on-off valve 52c, and can mix hydrochloric acid with pure water dissolved in nitrogen supplied from the nitrogen dissolving unit 58. It has become. The pH of the mixed solution (pure water + hydrochloric acid) dissolved in nitrogen is adjusted by controlling the flow rate of hydrochloric acid to be mixed. Further, the mixing unit 55 is connected to the nozzle 6 via the pipes 7 and 8, and the mixed liquid which is dissolved in nitrogen and adjusted in pH from the nozzle 6 can be discharged toward the substrate W as a rinse liquid. . Thus, in this embodiment, the hydrochloric acid supply source 52a, the mixing unit 52b, the on-off valve 52c, and the pipe 52d constitute the pH adjustment unit 52.

  Then, in accordance with a control command from the control unit 80 that controls the entire apparatus, the substrate is selectively made of pure water in which an aqueous hydrofluoric acid solution or nitrogen is dissolved from the mixing unit 55 to the pipe 8 by switching the opening and closing valves 53 and 56. It can be supplied toward the surface of W. That is, when all the on-off valves 53 and 56 are opened, hydrofluoric acid and pure water are supplied to the mixing unit 55 to prepare a hydrofluoric acid aqueous solution having a predetermined concentration. Then, this hydrofluoric acid aqueous solution is discharged from the nozzle 6 toward the back surface of the substrate W through the tubes 7 and 8, and the film adhering to the back surface of the substrate is removed by etching. Further, the on-off valve 53 is closed and the on-off valve 56 is opened. When the on-off valve 52c is opened, the nitrogen-dissolved and pH-adjusted rinsing liquid is transferred from the nozzle 6 to the substrate W through the pipes 7 and 8. It is supplied to the back surface and can be rinsed. Here, the pH of the rinsing liquid is adjusted by controlling the flow rate of hydrochloric acid according to the object to be treated. However, when the object to be treated is a Si substrate, the pH of the rinsing liquid suppresses the amount of Si eluted. Moreover, it adjusts so that it may become the range of 2-6 from the problem of corrosion. Thus, in this embodiment, on the back side of the substrate W, the nitrogen dissolving unit 58 corresponds to the “nitrogen dissolving means” of the present invention, and the pH adjusting unit 52 corresponds to the “pH adjusting means” of the present invention. . On the surface side of the substrate W, the nitrogen dissolving unit 78 is added to the “nitrogen dissolving means” of the present invention, and the pH adjusting unit 72 including the hydrochloric acid supply source 72a, the mixing unit 72b, the on-off valve 72c, and the pipe 72d. This corresponds to the “pH adjusting means” of the invention.

  Thus, with respect to the back surface side of the substrate W, the nozzle 6 from the pure water supply unit 200 outside the processing unit main body 101 along the supply path (201-57-8-7) whose one end is connected to the nozzle 6. The pure water flowing toward the surface is dissolved in nitrogen by the nitrogen dissolving unit 58 and hydrochloric acid is mixed by the pH adjusting unit 52 to adjust the pH of the mixed solution. Then, the mixed solution which is dissolved in nitrogen and adjusted in pH is supplied as a rinse liquid from the nozzle 6 to the back surface of the substrate W to be rinsed. Similarly, with respect to the surface side of the substrate W, the nozzle 25 is supplied from the pure water supply unit 200 outside the processing unit main body 101 along a supply path (201-77-27-26) whose one end is connected to the nozzle 25. The pure water flowing toward the surface is dissolved in nitrogen by the nitrogen dissolving unit 78 and hydrochloric acid is mixed by the pH adjusting unit 72 to adjust the pH of the mixed solution. Then, the mixed solution dissolved in nitrogen and adjusted in pH is supplied as a rinsing liquid from the nozzle 25 to the surface of the substrate W to be rinsed.

  Next, the operation of the substrate processing system configured as described above will be described with reference to FIG. FIG. 4 is a flowchart showing the operation of the substrate processing system of FIG. In the substrate processing apparatus 100, after the unprocessed substrate W is transferred to the spin chuck 1 by the transfer robot and held by the holding member 3 (step S <b> 1), each part of the apparatus is as follows in the control unit 80 that controls the entire apparatus. The film removal process, the rinse process, and the drying process are performed in this order under control.

  In step S2, after the blocking member 21 is disposed close to the surface of the substrate W held by the spin chuck 1, the driving of the motor 5 is started with the substrate W sandwiched between the base member 2 and the blocking member 21. Then, the substrate W is rotated together with the spin chuck 1. In addition, all the on-off valves 53, 73, 56, and 76 are opened to supply hydrofluoric acid and pure water to the mixing units 55 and 75 to prepare a hydrofluoric acid aqueous solution having a predetermined concentration. To pump. Thereby, supply of the hydrofluoric acid aqueous solution from the nozzles 6 and 25 to both surfaces of the substrate W is started (step S3). Thereby, the etching removal of the film adhering to both surfaces of the substrate W is started. Thus, in this embodiment, the film removal step corresponds to the “wet treatment step” of the present invention.

  When it is confirmed in step S4 that the film removal process is completed, all the on-off valves 53, 73, 56, and 76 are closed, and the supply of the hydrofluoric acid aqueous solution from the nozzles 6 and 25 to the substrate W is stopped. Is rotated at a high speed, and the hydrofluoric acid aqueous solution is shaken off to drain out of the apparatus.

  When the draining of the hydrofluoric acid aqueous solution is thus completed (step S5), the on-off valves 18 and 37 are opened, and an inert gas is supplied to the space between the substrate W and the base member 2 and the blocking member 21. After the atmosphere around the substrate W is changed to an inert gas atmosphere, when the on-off valves 56 and 76 are opened and the on-off valves 52c and 72c are opened, a rinse solution that is dissolved in nitrogen and adjusted in pH is generated (“rinse” of the present invention The rinsing liquid is supplied to both main surfaces of the substrate W, and the rinsing process (corresponding to the “rinsing process” of the present invention) is performed on the substrate W (step S6). . Then, after closing the on-off valves 56, 76, 52c, 72c and rinsing processing, the substrate W is continuously rotated until the substrate W is dried. After the drying of the substrate W is finished, the rotation of the substrate is stopped and the on-off valves 18, 37 is closed and the supply of the inert gas is stopped (step S7).

  Thus, when a series of substrate processing (film removal processing, rinsing processing and drying processing) is completed, the blocking member 21 is separated from the surface of the substrate W held by the spin chuck 1 and the substrate holding by the holding member 3 is released. Thereafter, the transfer robot carries the processed substrate W to the next substrate processing apparatus (step S8).

  As described above, according to this embodiment, since the substrate W is rinsed using the rinse solution that is dissolved in nitrogen and adjusted in pH, the following operation is obtained. First, elution of Si from the substrate surface can be suppressed by lowering the pH of the rinsing liquid as compared with pure water. Further, since nitrogen is dissolved in the rinsing liquid, the dissolved oxygen concentration in the rinsing liquid can be reduced, and the drying process is completed after the rinsing liquid is discharged from the nozzles 6 and 25 toward the substrate W (that is, In the period until the rinsing liquid is removed from the substrate W) (for example, about 30 seconds), it is possible to effectively prevent the dissolved oxygen concentration of the rinsing liquid from rapidly increasing. In addition, the elution of Si from the substrate surface can be further suppressed by reducing the dissolved oxygen concentration of the rinsing liquid.

  Thus, in this embodiment, since the elution of Si is suppressed by lowering the pH of the rinse solution and the dissolved oxygen concentration, the following advantages are obtained. In other words, there is a limit to the pH reduction of the rinsing liquid due to the problem of corroding the substrate W, but by reducing the dissolved oxygen concentration in the rinsing liquid, Si can be eluted to the extent that it cannot be realized due to the corrosion problem. Can be suppressed. As a result, generation of an oxide film on the substrate W can be prevented, and elution of Si from the substrate surface can be effectively suppressed to prevent generation of a watermark.

  In addition, since the atmosphere around the substrate W is an inert gas atmosphere during the rinsing process and the drying process, the amount of oxygen around the substrate W that can be dissolved in the rinsing liquid can be reduced. Therefore, it is possible to further suppress an increase in the dissolved oxygen concentration of the rinse liquid during a period (for example, about 30 seconds) from when the rinse liquid is discharged from the nozzle toward the substrate W until the rinse liquid is removed from the substrate W. As a result, generation of an oxide film and a watermark on the substrate W can be more effectively suppressed.

  Further, according to this embodiment, since the nitrogen dissolving units 58 and 78 are provided in the processing unit main body 101, the flow path from the generation of the rinse liquid to the discharge from the nozzles 6 and 25 is shortened. Can do. For this reason, the generated rinsing liquid is quickly supplied to the substrate W, and the rinsing process can be performed by supplying the rinsing liquid to the substrate W within a time period in which the effect of dissolving nitrogen is maintained. As a result, the increase in the dissolved oxygen concentration of the rinse liquid can be more effectively suppressed.

<Second Embodiment>
FIG. 5 is a diagram showing a configuration of a substrate processing system according to the second embodiment of the present invention. The second embodiment differs greatly from the first embodiment in that, in the first embodiment, pure water supplied from the utility of the factory where the substrate processing apparatus 100 is installed is directly supplied to the nitrogen melting units 58 and 78. In contrast to this, in the second embodiment, pure water is supplied to the nitrogen dissolution units 58 and 78 immediately after the deaeration process in the deaeration units 59 and 79 to supply the rinse liquid. This is the point that generates Thus, in this embodiment, the deaeration units 59 and 79 corresponding to the “deaeration means” of the present invention are additionally provided in the processing unit main body 101. That is, on the back side of the substrate W, a deaeration unit 59 is added to the other end side of the supply path (201-57-8-7) whose one end is connected to the nozzle 6 with respect to the nitrogen dissolving unit 58. As for the surface side of the substrate W, the one end of the substrate W is removed from the other end of the supply path (201-77-27-26) connected to the nozzle 25. An air unit 79 is additionally provided. Therefore, the following effects can be further obtained.

  Conventionally, in a factory where the substrate processing apparatus 100 is installed, deaeration treatment is performed on pure water by a deaeration treatment facility adjacent to the factory to reduce the dissolved oxygen concentration in the pure water. The deaerated pure water is supplied to a utility line (pipe 201) of the factory. However, in this pure water, oxygen is dissolved in a period until it reaches the substrate processing apparatus 100 from the degassing treatment facility via the utility line, and the dissolved oxygen concentration of the pure water increases from immediately after the degassing treatment. It has been. On the other hand, in this embodiment, deaeration units 59 and 79 are provided adjacent to the nitrogen dissolution units 58 and 78. For this reason, pure water having a low dissolved oxygen concentration due to the deaeration process (corresponding to the “deaeration step” of the present invention) by the deaeration units 59 and 79 is immediately supplied to the nitrogen dissolution units 58 and 78. Therefore, it is possible to generate a rinse liquid having a lower dissolved oxygen concentration than in the first embodiment.

  In the substrate processing system configured as described above, a series of substrate processing (film removal processing, rinsing processing, and drying processing) is performed in the operation procedure shown in FIG. Is obtained. That is, the elution of Si from the substrate surface can be suppressed by lowering the pH of the rinsing liquid as compared with pure water and lowering the dissolved oxygen concentration of the rinsing liquid. Further, the rinse liquid is discharged during a period (for example, about 30 seconds) from when the rinse liquid is discharged from the nozzles 6 and 25 toward the substrate W until the drying process is completed (that is, the rinse liquid is removed from the substrate W). An increase in the dissolved oxygen concentration can be suppressed. Furthermore, in this embodiment, since the nitrogen is dissolved in the pure water immediately after deaeration, it is possible to generate a rinse liquid having a dissolved oxygen concentration reduced as compared with the previous embodiment. As a result, generation of an oxide film and a watermark on the substrate W can be further effectively suppressed.

  In the second embodiment, since the degassing units 59 and 79 are provided in the processing unit main body 101 together with the nitrogen dissolving units 58 and 78, the pure water is degassed and dissolved in nitrogen, and the pH is adjusted. The flow path until the rinse liquid is generated and the rinse liquid is discharged from the nozzles 6 and 25 can be shortened. Therefore, the generated rinse liquid is quickly supplied to the substrate W, and an increase in the dissolved oxygen concentration of the rinse liquid can be further effectively suppressed.

<Third Embodiment>
FIG. 6 is a diagram showing a third embodiment of the substrate processing system according to the present invention. The third embodiment is greatly different from the first embodiment in that the first embodiment generates a rinse liquid by mixing hydrochloric acid with pure water in which nitrogen is dissolved by the nitrogen dissolving units 58 and (78). On the other hand, in the third embodiment, nitrogen is dissolved by a nitrogen dissolving unit 68 in a mixed solution obtained by mixing hydrochloric acid with pure water. With this configuration, the following advantages can be obtained. That is, in the first embodiment, since hydrochloric acid is mixed in-line with pure water dissolved in nitrogen, it is difficult to control the flow rate of hydrochloric acid, and it is difficult to finely adjust the pH of the rinse liquid. This is because it is necessary to control a small amount of hydrochloric acid in order to adjust the pH of the rinse liquid to a desired value. On the other hand, in this embodiment, after adjusting the pH of the mixed solution by mixing hydrochloric acid with pure water, a part (or all) of the adjusted solution is taken out and dissolved in nitrogen. It is easy to fine tune the pH.

  As shown in FIG. 6, pure water from the pure water supply unit 200 provided outside the processing unit main body 101 is supplied to the cabinet unit 400. The cabinet unit 400 is frequently used to generate a treatment liquid by combining a plurality of types of chemicals and pure water. In this embodiment, the cabinet part 400 generates a rinse liquid obtained by mixing pure water and hydrochloric acid. It is used for. The cabinet unit 400 includes a storage tank 41 that stores a mixed solution of pure water and hydrochloric acid, and one end of a pipe 201 for supplying pure water into the storage tank 41 is taken into the storage tank 41. The other end is connected to a pure water supply unit 200 provided separately from the processing unit main body 101 via the on-off valve 202. In addition, one end of a pipe 62a for supplying hydrochloric acid into the storage tank 41 is taken into the storage tank 41, and the other end is connected to a hydrochloric acid supply source 62 through an on-off valve 62b.

  Further, the other end of the supply pipe 42 whose one end is connected to the inlet of the nitrogen dissolving unit 68 is inserted into the storage tank 41, and the mixed solution stored in the storage tank 41 is dissolved into the nitrogen via the on-off valve 43. The unit 68 can be supplied. The supply pipe 42 includes a metering pump 44 that sends the mixed liquid stored in the storage tank 41 to the supply pipe 42, a temperature controller 45 that adjusts the temperature of the liquid mixture sent to the supply pipe 42 by the metering pump 44, A filter 46 that removes impurities and the like in the mixed solution is provided.

  A circulation pipe 47 branched from the supply pipe 42 is provided between the on-off valve 43 of the supply pipe 42 and the filter 46. For this reason, the mixed liquid sent out by the metering pump 44 through the circulation pipe 47 is passed through the temperature controller 45 and the filter 46 and returned to the storage tank 41, so that the mixed liquid can be circulated. Yes. An open / close valve 48 is interposed in the circulation pipe 47, and the mixed liquid can be circulated by opening the open / close valve 48 and closing the open / close valve 43. On the other hand, the mixed solution can be supplied to the nitrogen dissolving unit 68 by opening the on-off valve 43 and closing the on-off valve 48. The outlet of the nitrogen dissolving unit 68 is connected to a pipe 67, and the pipe 67 is further connected to nozzles 6 and 25 via branch pipes 57 and 77 having on-off valves 56 and 76, respectively.

  In the substrate processing system configured as described above, the mixed liquid adjusted to a predetermined pH is obtained by mixing pure water from the pure water supply unit 200 and hydrochloric acid from the hydrochloric acid supply unit 62 in the storage tank 41. Is generated. Then, by opening the on-off valve 48 with the on-off valve 43 closed, the pH of the mixed solution can be adjusted and circulated while removing impurities and the like in the mixed solution. Here, by opening the on-off valve 43 and closing the on-off valve 48, the liquid mixture adjusted in pH is fed into the nitrogen dissolving unit 68, and nitrogen is added to the pH adjusted mixed liquid by the nitrogen dissolving unit 68. Dissolved. Further, by opening the on-off valves 56 and 76, the pH is adjusted from the nozzles 6 and 25 and the mixed solution dissolved in nitrogen is supplied as a rinsing liquid to both main surfaces of the substrate W, and the substrate W is rinsed. Is done.

  Thus, in this embodiment, about the back surface side of the board | substrate W, it processes along the supply path | route (201-storage tank 41-42-67-57-8-7) where the one end was connected to the nozzle 6. The pH of the mixed solution (pure water + hydrochloric acid) is adjusted by mixing hydrochloric acid in the storage tank 41 with pure water flowing from the pure water supply unit 200 outside the unit main body 101 toward the nozzle 6, and the mixing Nitrogen is dissolved in the liquid by a nitrogen dissolving unit 68. Then, the mixed liquid that is adjusted in pH and dissolved in nitrogen is supplied as a rinsing liquid from the nozzle 6 to the back surface of the substrate W to be rinsed. Similarly, with respect to the surface side of the substrate W, the pH in the storage tank 41 is along the supply path (201-storage tank 41-42-67-77-27-26) whose one end is connected to the nozzle 25. Is dissolved in the mixed liquid by the nitrogen dissolving unit 68. Then, the mixed liquid which is adjusted in pH and dissolved in nitrogen is supplied as a rinsing liquid from the nozzle 25 to the surface of the substrate W to be rinsed.

  As described above, also in this embodiment, since the rinse liquid is adjusted in pH and dissolved in nitrogen, the same effect as that of the first embodiment can be obtained. That is, the dissolved oxygen lowering action of the rinsing liquid and the elution reducing action of Si from the substrate surface can prevent the oxidation of the substrate W and the generation of watermarks. Furthermore, in this embodiment, since the liquid mixture is once stored in the storage tank 41 and the pH of the rinse liquid is adjusted, the pH of the rinse liquid can be easily finely adjusted.

  The storage tank 41 is a closed tank. For this reason, when nitrogen is supplied into the storage tank 41 and the space in which the liquid mixture in the storage tank 41 is not stored is purged with nitrogen, the nitrogen is dissolved in the liquid mixture in the storage tank 41. be able to. As a result, it is possible to obtain the same effect as when the nitrogen dissolving unit 68 dissolves nitrogen in the pH-adjusted liquid mixture.

  In this embodiment, a degassing unit may be provided on the upstream side of the nitrogen dissolving unit 68 as in the second embodiment. For example, a deaeration unit may be provided between the nitrogen dissolving unit 68 and the on-off valve 43 or between the storage tank 41 and the on-off valve 202 when the storage tank 41 is replaced with nitrogen. With this configuration, the dissolved oxygen concentration of the rinse liquid can be further reduced, and the oxidation of the substrate W and the generation of watermarks can be effectively prevented.

<Fourth embodiment>
FIG. 7 is a diagram showing a fourth embodiment of the substrate processing system according to the present invention. The fourth embodiment differs greatly from the first embodiment in that the first embodiment is a so-called single-wafer type that processes the substrates W one by one, whereas the fourth embodiment has a plurality of This is a so-called batch type in which the substrates W are collectively processed. In this batch-type substrate processing system, for example, an etching solution (hydrofluoric acid aqueous solution or the like) is used to perform a series of various processing (film removal processing, rinsing processing, drying processing using a processing solution) on a plurality of substrates W. The film removal processing tank for storing the processing liquid, etc., the film removal processing tank for performing the film removal processing on the substrate W, the rinsing processing tank for storing the pure water as the rinsing liquid, and rinsing the substrate W, and the substrate W by spin drying or the like A drying treatment tank for drying is provided. FIG. 7 shows a substrate processing system related to the rinsing process.

  The rinsing treatment tank 91 shown in FIG. 7 performs a rinsing process for washing away the treatment liquid adhering to the surface of the substrate W and the particles generated thereby after the film removal process is performed in the film removal treatment tank. Specifically, the plurality of substrates W processed in the film removal processing tank are transferred to the lifter device 92 that can be held by the three arms 92a, and the lifter device 92 is lowered in the rinsing processing tank 91. Is immersed in a rinse solution. Pure water, which is a rinsing liquid, is disposed in the rinsing tank 91 in a parallel manner at the bottom of the tank through the pipe 93 for supplying the rinsing liquid and the branch pipes 93a and 93b before being supplied from the bottom of the tank. The two rinse liquid supply parts 94a and 94b are respectively injected toward the center side. Each of the pair of rinse liquid supply units 94a and 94b has a plurality of nozzles (not shown) for discharging the rinse liquid between the substrates W from the lower left and right sides of the plurality of substrates W immersed in the processing liquid. The rinsing liquid discharged from each nozzle between the nozzles rises while the rinsing liquid spouted from both the left and right sides forms an upward flow at the center of the tank, and the opening at the top of the tank It overflows from the part. Contaminants such as particles generated by the processing liquid due to the overflow are received in the overflow tanks 95a and 95b together with the processing liquid and pure water, and discharged out of the tank.

  Next, the configuration of the liquid supply unit 50 will be described. The configuration of the liquid supply unit 50 is basically the same as that of the first embodiment except that there is no hydrofluoric acid supply system that supplies hydrofluoric acid as a processing liquid (these are provided in the film removal processing tank). is there. That is, the pure water supply unit 200 provided separately from the substrate processing apparatus 100 is connected to the inlet of the nitrogen dissolving unit 58 via the pipe 201, and the outlet of the nitrogen dissolving unit 58 is connected to the on-off valve 56 and the mixing unit 52b. It is connected to the rinsing liquid supply parts 94a and 94b via the pipe 93 and the branch pipes 93a and 93b. The mixing unit 52b is connected to a hydrochloric acid supply source 52a via a pipe 52d provided with an on-off valve 52c, and can mix hydrochloric acid with pure water dissolved in nitrogen supplied from the nitrogen dissolving unit 58. It has become. Therefore, by adjusting the on-off valve 52c, it is possible to adjust the pH of the mixed liquid by mixing hydrochloric acid with pure water dissolved in nitrogen. Then, by opening the on-off valve 52c and opening the on-off valve 56, the nitrogen-dissolved and pH-adjusted mixed solution is supplied to each substrate W immersed in the rinsing treatment tank 91 as a rinsing solution.

  Thus, in this embodiment, the processing unit is disposed along the supply path (201-93-93a or 201-93-93b) whose one end is connected to the nozzles disposed in the rinsing liquid supply units 94a and 94b. The pure water flowing from the pure water supply unit 200 outside the main body 101 toward the nozzle is dissolved in nitrogen by the nitrogen dissolving unit 58 and mixed with hydrochloric acid by the pH adjusting unit 52 to adjust the pH of the mixed solution. Then, the mixed solution dissolved in nitrogen and adjusted in pH is supplied as a rinsing liquid from the nozzles to each substrate W to be rinsed.

  The rinse treatment tank 91 is accommodated in a sealed structure 96, and a gas supply unit 20 is connected to the sealed structure 96 through a pipe 19 having an on-off valve 18 interposed therebetween. For this reason, by opening the on-off valve 18, an inert gas (such as nitrogen) is supplied into the sealed structure 96 to fill the vicinity of the rinsing treatment tank 91 with the inert gas, and from an exhaust port (not shown). It is configured to be purged.

  As described above, in this embodiment, since a rinse liquid obtained by mixing hydrochloric acid with pure water dissolved in nitrogen is supplied to the plurality of substrates W immersed in the rinse treatment tank 91, the same as in the first embodiment. The following effects can be obtained. That is, since the substrate W is rinsed using a rinse solution that is dissolved in nitrogen and adjusted in pH, the following effects are obtained. First, elution of Si from the substrate surface can be suppressed by adjusting the pH of the rinse liquid. In addition, the dissolved oxygen concentration of the rinse liquid can be lowered by the nitrogen dissolving effect in the rinse liquid, and the elution of Si can be further suppressed. For this reason, the oxidation of the substrate W can be prevented, and the generation of the watermark can be prevented.

  In this embodiment, a degassing unit may be provided on the upstream side of the nitrogen dissolving unit 58 as in the second embodiment. With this configuration, the dissolved oxygen concentration of the rinse liquid can be further reduced, and the oxidation of the substrate W and the generation of watermarks can be effectively prevented.

  Further, since the vicinity of the periphery of the rinsing treatment tank 91 is an inert gas atmosphere, the amount of oxygen dissolved in the rinsing liquid is reduced to further suppress an increase in the dissolved oxygen concentration of the rinsing liquid, and the rinsing treatment tank for the substrate W Oxidation of the substrate W accompanying loading / unloading to / from 91 can be prevented. Therefore, the oxidation of the substrate W and the generation of watermarks can be more effectively prevented.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, a series of processing is performed on both surfaces of the substrate W, but the present invention can be applied to a substrate processing apparatus and a substrate processing system that perform substrate processing only on one surface. For example, in the case where only one surface of the substrate W has a problem with generation of an oxide film or a watermark, it is advantageous in terms of cost if the substrate processing is performed only on the one surface.

  In the above embodiment, the pH of the rinse liquid is adjusted by adding hydrochloric acid as a “low pH substance”, but the present invention is not limited to this. For example, the same effect can be obtained by mixing hydrofluoric acid or carbonated water. When the pH of the rinsing liquid is adjusted by mixing hydrofluoric acid with pure water, for example, in the first and second embodiments, the hydrofluoric acid supply source used as the processing liquid as it is without providing the pH adjusting units 52 and 72. Hydrofluoric acid from 51 and 71 may be used. In this case, a predetermined amount of hydrofluoric acid is added to the rinse liquid by opening the on-off valves 56 and 76 and adjusting the on-off valves 53 and 73 during the rinsing process. Thereby, the rinse liquid can be adjusted to a desired pH. In addition, it is not limited to adjusting pH by dissolving hydrofluoric acid after dissolving nitrogen in pure water, but adjusting pH by mixing hydrofluoric acid in advance before dissolving nitrogen in pure water. Good.

  Moreover, in the said embodiment, nitrogen was melt | dissolved in the pure water and the nitrogen-rich rinse liquid was produced | generated, However, It is more preferable if the rinse liquid is produced | generated using an ultrapure water instead of a pure water.

  In the first, third, and fourth embodiments, the dissolved oxygen concentration of the rinsing liquid is reduced by dissolving nitrogen. However, in order to reduce the dissolved oxygen concentration of the rinsing liquid, pure water or a pH adjusted mixed liquid is used. You may make it deaerate by deaeration means. For example, in the first embodiment, as shown in FIG. 8, deaeration units (deaeration means) 59 and 79 may be provided in place of the nitrogen dissolution units 58 and 78. According to this configuration, pure water from the pure water supply unit (pure water supply unit) 200 is supplied to the substrate processing apparatus (substrate processing unit) 100, and the deionized water is degassed in the processing unit main body 101. A low pH substance is mixed with degassed pure water. In addition, as shown in FIG. 9, deaeration units 59 and 79 may be arranged on one end side (nozzles 6 and 25 side) of the supply path with respect to the pH adjustment units 52 and 72. According to this configuration, pure water from the pure water supply unit 200 is supplied to the substrate processing apparatus 100, and after the low pH substance such as hydrochloric acid is mixed with pure water in the processing unit main body 101, the mixed fluid is Degassed. Then, the pH adjusted and degassed fluid is supplied as a rinse liquid from the nozzles 6 and 25 to the substrate W to rinse the substrate W. In this way, by adjusting the pH of the rinsing liquid and the deaeration process, the elution reduction of the Si (oxidized substance) from the substrate W and the dissolved oxygen reduction are effectively performed, and the oxide film on the substrate W accompanying the rinsing process Generation of watermarks is prevented.

  In particular, when the mixed solution is degassed with respect to the mixing position and the pH adjustment units 52 and 72 on one end side (nozzles 6 and 25 side) of the supply path (FIG. 9), the pure water and the low pH substance are mixed. By performing the deaeration process on the mixed solution, oxygen dissolved in the pure water and the low pH substance before mixing can be reduced, and the above-described effects can be exhibited more suitably.

  Furthermore, by providing a nitrogen dissolution unit downstream of the deaeration means (nozzle side), degassed pure water or a deaerated and pH adjusted mixed liquid (hereinafter referred to as “degassed fluid”) Nitrogen may be dissolved (corresponding to the “nitrogen dissolving step” of the present invention). Thereby, it is possible to prevent the oxygen from being dissolved in the degassed fluid with the passage of time from the degassing process, and to further reduce the dissolved oxygen concentration of the degassed fluid.

  In the first, second, and fourth embodiments, the nitrogen-dissolved pure water (or degassed pure water) is mixed with a low-pH substance such as hydrochloric acid after the nitrogen-rich pure water is mixed with the rinse solution. A low-pH substance is mixed in pure water and then nitrogen is dissolved in the mixed solution, or a low-pH substance and nitrogen are dissolved in pure water at the same time to adjust a pH-rich nitrogen-rich fluid. You may produce | generate as a rinse liquid.

  Further, in the above embodiment, the nitrogen dissolving units 58 and (78) are provided in the processing unit main body 101. However, as shown in FIG. 10, the nitrogen dissolving units 58 and (78) are provided outside the processing unit main body 101. May be. Specifically, the nitrogen dissolving units 58 and (78) may be inserted in a utility line (tube 201) in a factory that connects the pure water supply unit (pure water supply unit) 200 and the processing unit main body 101. Good. By providing the nitrogen dissolving units 58 and (78) outside the processing unit main body 101 as described above, there is an advantage that the processing unit main body 101 can be configured compactly.

  Here, the pure water supply unit 200 will be described in detail with reference to FIG. 10. The pure water supply unit 200 purifies pure water from a pure water supply source 200a that supplies pure water and pure water from the pure water supply source 200a. The pure water circulating through the circulation path 200b is degassed by a degassing treatment facility (not shown) and dissolved in the pure water. Oxygen concentration is reduced. However, even if the dissolved oxygen concentration is reduced in advance by deaeration in this way, the pure water is removed from the treatment unit main body via a utility line (pipe 201) that branches from the circulation path 200b and communicates with the treatment unit main body 101. Oxygen is dissolved in a period until reaching 101, and the dissolved oxygen concentration of pure water increases from immediately after the deaeration treatment.

  On the other hand, if the nitrogen dissolving unit 58, (78) is provided outside the processing unit main body 101 and nitrogen is dissolved in the pure water by the nitrogen dissolving unit 58, (78), the pure water that reaches the processing unit main body 101 is obtained. The increase in dissolved oxygen concentration can be suppressed. From this point of view, it is desirable to provide the nitrogen dissolving unit 58, (78) immediately after branching from the circulation path 200b where there is a concern about the dissolution of oxygen in pure water. In consideration, the nitrogen dissolving units 58 and (78) are arranged within a capacity of 200 L in the flow path of the rinsing liquid from the nitrogen dissolving units 58 and (78) to the discharge ports of the nozzles 6 and (25), respectively. It is desirable to install.

  Further, in the second embodiment, when the nitrogen dissolving units 58 and (78) are provided outside the processing unit main body 101, the degassing units 59 and (79) are also outside the processing unit main body 101 and are nitrogen dissolving unit 58. , (78) is preferably provided on the upstream side. This is because the dissolved oxygen concentration of the rinse liquid can be effectively reduced by shortening the time elapsed from the deaeration process to the nitrogen dissolution process.

  Further, the pH adjusting units 52 and 72 or the cabinet unit 400 may also be provided outside the processing unit main body 101. By disposing in this way, the processing unit main body 101 can be made compact.

  In the above embodiment, a hydrofluoric acid aqueous solution is supplied as a processing liquid to the substrate W to perform wet processing on the substrate. However, other processing liquids (for example, a cleaning liquid and a developer) are supplied to the substrate to obtain a predetermined process. The present invention can be applied to a substrate processing apparatus and a substrate processing system that perform wet processing (for example, cleaning processing and development processing). In short, the present invention can be applied to all substrate processing apparatuses and substrate processing systems that perform a rinsing process by supplying a rinsing liquid to a substrate.

  The present invention is applied to a substrate processing apparatus and a substrate processing system in which a processing liquid is supplied to a substrate and subjected to a predetermined wet process, and then a pure water is used as a rinsing liquid to perform a rinsing process on the substrate.

It is a graph which shows the relationship of the elution amount of Si with respect to pH of a rinse liquid, and the amount of dissolved oxygen. It is sectional drawing which shows the structure of the whole substrate processing system concerning 1st Embodiment of this invention. It is a block diagram which shows the control structure of the substrate processing system of FIG. It is a flowchart which shows operation | movement of the substrate processing system of FIG. It is a figure which shows the structure of the substrate processing system concerning 2nd Embodiment of this invention. It is a figure which shows the structure of the substrate processing system concerning 3rd Embodiment of this invention. It is a figure which shows the structure of the substrate processing system concerning 4th Embodiment of this invention. It is a figure which shows the structure of the substrate processing system concerning other embodiment of this invention. It is a figure which shows the structure of the substrate processing system concerning other embodiment of this invention. It is a figure which shows the structure of the substrate processing system concerning further another embodiment of this invention.

Explanation of symbols

2. Base member (atmosphere blocking means)
6, 25 ... Nozzle 20, 39 ... Gas supply section (inert gas supply means)
21. Blocking member (atmosphere blocking means)
52, 72 ... pH adjustment unit (pH adjustment means)
58, 68, 78 ... Nitrogen dissolving unit (nitrogen dissolving means)
59, 79 ... Deaeration unit (deaeration means)
100: Substrate processing apparatus (substrate processing unit)
101 ... Processing unit body (unit body)
200 ... pure water supply unit (pure water supply unit)
400 ... Cabinet (pH adjusting means)
W ... Board

Claims (6)

A wet processing step of supplying a processing liquid to the substrate and applying a predetermined wet processing;
A rinsing liquid generating step for generating a rinsing liquid;
After the wet processing step, the rinsing liquid is fed into the nozzle along a supply path connected at one end to the nozzle, and the rinsing liquid is supplied from the nozzle to the substrate. A rinsing process for rinsing,
In the rinsing liquid generating step, pure water fed from the other end side of the supply path is degassed at a predetermined degassing position on the supply path, and the degassed pure water is on the supply path. Nitrogen is dissolved at a nitrogen dissolving position on the one end side of the deaeration position to generate a nitrogen-rich fluid, and the nitrogen-rich fluid is located on the one end side of the nitrogen dissolving position on the supply path with respect to the nitrogen-rich fluid. the substrate processing method, wherein the at mixing position the pH by mixing low low pH material than pure water is a step of generating the rinsing liquid. The rinsing liquid generating step generates a liquid mixture having a pH of 2 to 6 as the rinsing liquid by mixing a low pH substance having a pH lower than that of the pure water at the mixing position with the nitrogen-rich fluid . that請 Motomeko first substrate processing method according. The rinsing step the substrate processing method according to claim 1 or 2 carried out in an inert gas atmosphere. A nozzle,
Deaeration means for degassing pure water supplied from a pure water supply source along the supply path connected to the nozzle at one end thereof, and flowing toward the nozzle ;
A nitrogen dissolving means that is disposed on the one end side of the degassing means on the supply path and that dissolves nitrogen in the pure water degassed by the degassing means to generate a nitrogen-rich fluid;
It is arranged on the one end side of the nitrogen dissolving means on the supply path, and a low pH substance having a pH lower than that of the pure water is mixed with the fluid generated by the nitrogen dissolving means and flows through the supply path. and a pH adjusting means for adjusting the pH of the fluid,
A substrate having a pH adjusted by the pH adjusting means is supplied as a rinse liquid to the nozzle along the supply path and supplied from the nozzle to the substrate, and the substrate is rinsed with the rinse liquid. Processing equipment. An atmosphere blocking means spaced from the substrate while facing the substrate to which the rinsing liquid is supplied;
The substrate processing apparatus according to claim 4 , further comprising an inert gas supply unit that supplies an inert gas to a space formed between the atmosphere blocking unit and the substrate. A pure water supply unit for supplying pure water;
In a substrate processing system comprising a substrate processing unit that performs a rinsing process on a substrate using pure water supplied from the pure water supply unit,
The substrate processing unit includes:
A nozzle,
A deaeration means for degassing pure water supplied from the pure water supply unit along one of the supply paths connected to the nozzle and flowing toward the nozzle ;
A nitrogen dissolving means that is disposed on the one end side of the degassing means on the supply path and that dissolves nitrogen in the pure water degassed by the degassing means to generate a nitrogen-rich fluid;
It is arranged on the one end side of the nitrogen dissolving means on the supply path, and a low pH substance having a pH lower than that of the pure water is mixed with the fluid generated by the nitrogen dissolving means and flows through the supply path. PH adjusting means for adjusting the pH of the fluid ;
In the unit body,
A substrate having a pH adjusted by the pH adjusting means is supplied as a rinse liquid to the nozzle along the supply path and supplied from the nozzle to the substrate, and the substrate is rinsed with the rinse liquid. Processing system.

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