JP4545133B2 - Semiconductor memory device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor memory device and a manufacturing method thereof.

  Conventionally, a DRAM (Dynamic Random Access Memory) capable of forming one memory cell with one transistor and one capacitor has been widely used as one of semiconductor memory devices that can be easily integrated on a large scale.

  As shown in FIG. 18A, the DRAM includes a MOS transistor (transfer transistor Tr) in which the gate G is connected to the word line WL and one source / drain S / D is connected to the bit line BL, and the other One memory cell is constituted by the capacitor C1 having one electrode connected to the source / drain S / D.

  The storage information is written in the DRAM by applying a predetermined voltage to the bit line BL while applying a predetermined voltage to the word line WL and turning on the transfer transistor Tr, thereby applying a voltage to the capacitor C1. This is done by charging a charge. When the voltage of the word line WL is lowered after the capacitor C1 is charged and the transfer transistor Tr is turned off, the charge stored in the capacitor C1 is blocked and the charge is held for a while. . Thereby, the stored information is written.

  Reading of stored information is performed by applying a voltage to the word line WL with the bit line BL in a floating state to turn on the transfer transistor Tr and reading the charge of the capacitor C1 appearing on the bit line BL with a sense amplifier. Is called. The stored information is determined according to the amount of charge that appears on the bit line BL.

  However, in the DRAM, the charge stored in the capacitor C1 is lost in an extremely short time of about 100 ms due to electric leakage. Therefore, in order to keep the stored information, the charge is once read and rewritten before the charge is lost. It is necessary to perform so-called refresh. Also, because of the characteristics of DRAM, stored information is lost when the apparatus is turned off.

  On the other hand, FRAM (Ferroelectric Random Access Memory) using a hysteresis characteristic of the remanent polarization of a ferroelectric film has attracted attention as a nonvolatile semiconductor memory device that can retain stored information even when the power of the device is turned off.

  As shown in FIG. 18B, the basic structure of the FRAM is shown in FIG. 18A except that the dielectric film of the capacitor C2 is composed of a ferroelectric film such as PZT or Y1. It has almost the same structure as DRAM.

  The storage information is written into the FRAM by applying a voltage to the word line WL to turn on the transfer transistor Tr and then applying a predetermined voltage to the bit line BL and the plate line PL. At this time, the voltage to be applied is not limited to the voltage in one direction, unlike the case of the DRAM, but has a polarity corresponding to the storage information to be written.

  The ferroelectric film has hysteresis characteristics. When a predetermined voltage is applied to the capacitor C2 having the ferroelectric film as a dielectric and then returned to zero, the polarization charge amount does not return to zero but the predetermined polarization charge amount. Maintained.

  That is, for example, as shown in FIG. 19, when the applied voltage is gradually increased to the positive side to pass the point a and then returned to zero, the polarization value becomes the remanent polarization point b. On the other hand, when the applied voltage is gradually increased to the negative side and passed through point c and then the applied voltage is returned to zero, the polarization value becomes the residual polarization point d. Therefore, a positive or negative charge can be induced on the crystal surface by applying an applied voltage equal to or higher than the voltages corresponding to the points a and c between the bit line BL and the plate line PL. This charge is held as stored information.

  Reading of stored information appeared on the bit line BL by applying a voltage to the word line WL with the bit line BL in a floating state to turn on the transfer transistor Tr and applying a voltage to the ferroelectric capacitor C2. This is done by reading the charge with a sense amplifier. Since the amount of charge appearing on the bit line BL varies depending on the sign of the charge induced on the crystal surface of the dielectric film, the stored information can be determined by measuring this potential.

  Thus, unlike the case of the DRAM, the charges held by using the polarization inversion of the ferroelectric material are not lost even if time passes, and the FRAM does not need to be refreshed.

However, if an electric field is continuously applied to the ferroelectric film alternately in positive and negative directions, the remanent polarization value decreases, and as a result, the polarization may not be reversed (polarization degradation). For this reason, the FRAM has a disadvantage that the limit of the number of writing / reading is low. This number is about 10 ⁸ times for the FRAM currently being commercialized and about 10 ¹² times for the device under development, which is 3 to 7 orders of magnitude lower than about 10 ¹⁵ times for the DRAM. . For this reason, although the FRAM can be used as a storage device for medium and long-term holding that requires less writing / reading, it cannot be used as a main memory for frequently exchanging information with a computer.

  In DRAM and FRAM, when reading stored information, the transfer transistor Tr is turned on and a slight potential change of the bit line BL due to the influence of the capacitor charge is measured. However, this potential change is very weak and accurate. It is difficult to read. Therefore, a dummy cell DC having the same structure manufactured by the same process as that of the memory cell MC is provided, and the potential change of the bit line BL when reading the memory cell MC and the potential change of the bit line BL ′ when reading the dummy cell DC are sense amplifiers. The stored information is judged by comparing with SA. (FIG. 20 (a)).

  However, the dummy cells DC are usually provided one by one for one bit line BL connected with 128 to 512 memory cells MC. However, when all the memory cells MC connected to one bit line BL are written / read, the dummy cells In the DC, writing / reading is performed each time, and the device life of the originally short FRAM is further shortened.

  On the other hand, a two-transistor / 2-capacitor (2T / 2C-type) memory cell in which a dummy cell DC is provided in each memory cell MC as shown in FIG. A structure has been proposed. By providing the dummy cell DC in this manner, the dummy cell DC receives only a stress equivalent to the number of calls of the memory cell MC, and therefore it is possible to prevent the life of the storage device from being limited by the dummy cell DC.

  However, in the 2T / 2C type memory cell, since the number of elements is almost doubled, the degree of integration is reduced to about 1/2, which is extremely disadvantageous in terms of integration.

  As described above, conventional DRAMs and FRAMs have advantages and disadvantages, and characteristics desired as an ideal semiconductor memory device, that is, non-volatility capable of retaining stored information even when the power is turned off, and retaining information It has been difficult to simultaneously satisfy such requirements as high reliability such as capability and durability, high degree of integration and low price per bit, and semiconductor memory devices that satisfy these requirements have been eagerly desired.

  In addition, in order to make up for the above-mentioned drawbacks of DRAM and FRAM, DRAM and FRAM are also used by sharing their roles. In other words, DRAM is used as the main memory of a computer with a large number of rewrites, and the stored information is saved in the FRAM during periods when the computer is not used, such as at night. A system that can be entrusted is also being constructed. However, in this case, the DRAM and the FRAM cannot be used at the same time, and it is necessary to mount each of the DRAM and the FRAM for a necessary memory capacity, resulting in a problem that the price of the system increases.

  It is also conceivable to configure an embedded LSI in which both DRAM and FRAM are mounted on one LSI. However, in this case as well, the above-described system is simply realized in one LSI, and the substantial degree of integration is reduced to half.

  An object of the present invention is to provide a semiconductor memory device that is non-volatile, highly reliable, and highly integrated, and a method for manufacturing the same.

The object is to provide a transfer transistor formed on a semiconductor substrate, a columnar storage electrode connected to one source / drain diffusion layer of the transfer transistor, a dielectric film covering a surface of the storage electrode, and the dielectric A plurality of insulating films and a plurality of plate electrodes that are alternately stacked , surrounding the side surface of the storage electrode with a body film interposed therebetween , and the dielectric film is formed on a side wall of the storage electrode. A paraelectric film formed in one region and a ferroelectric film formed in a second region on the side wall of the storage electrode, the storage electrode, the paraelectric film, and the paraelectric film A paraelectric capacitor is configured by the plate electrode covering the first region of the storage electrode via a dielectric film, and the storage electrode, the ferroelectric film, and the ferroelectric film are interposed The pre-cover covering the second region of the storage electrode; Ferroelectric capacitor by the gate electrode is achieved by a semiconductor memory device characterized by being configured. By configuring the semiconductor memory device in this manner, a plurality of capacitors can be formed using one storage electrode. As a result, the number of capacitors for storing stored information can be increased without increasing the number of transfer transistors, so that the degree of integration of the semiconductor memory device can be improved. In addition, a plurality of capacitors can be provided on the sidewall of the storage electrode without reducing the degree of integration of the semiconductor memory device. In addition, a paraelectric capacitor and a ferroelectric capacitor can be formed using the side wall of the storage electrode.

  In the semiconductor memory device described above, it is preferable that a plurality of ferroelectric capacitors are constituted by the storage electrode, the dielectric film, and the plurality of plate electrodes.

Further, the object is to form a plate electrode made of a first conductive film on the base substrate and having an opening reaching the base substrate, and a paraelectric on the side wall of the plate electrode in the opening. Forming a body film ; embedding a second conductive film in the opening to form a first storage electrode made of the second conductive film; and on the first storage electrode and the plate electrode Forming a laminated film in which a plurality of insulating films and a plurality of conductive films are alternately laminated; forming a second opening in the laminated film reaching the first storage electrode; Forming a plurality of plate electrodes made of the conductive film, forming a ferroelectric film on a side wall of the stacked film in the second opening, and forming a third conductive in the second opening. A first conductive film comprising the third conductive film; Also achieved by a method of manufacturing a semiconductor memory device characterized by a step of forming a second storage electrode connected to the product electrode. By manufacturing the semiconductor memory device in this way, a paraelectric capacitor using the side wall of the first storage electrode and a plurality of ferroelectric capacitors using the side wall of the second storage electrode are formed. Can do. Compatibility to the conductive film, such as when different paraelectric film and the ferroelectric film, the manufacturing method described above is effective.

Further, the object is to form a columnar first storage electrode made of a first conductive film on a base substrate, and to form a paraelectric film on a side wall of the first storage electrode; Forming a first plate electrode covering the first storage electrode on the side wall of the first storage electrode via the paraelectric film ; and on the first storage electrode and the plate electrode, Forming a laminated film in which a plurality of insulating films and a plurality of conductive films are alternately laminated; forming a second opening reaching the first storage electrode in the laminated film; Forming a plurality of plate electrodes made of a conductive film ; forming a ferroelectric film on a sidewall of the laminated film in the second opening ; and forming a third conductive film in the second opening. A second storage made of the third conductive film and connected to the first storage electrode. Also achieved by a method of manufacturing a semiconductor memory device characterized by a step of forming an electrode. Even when the columnar first storage electrode is formed in front of the first plate electrode, the paraelectric capacitor using the side wall of the first storage electrode and the side wall of the second storage electrode are used. A plurality of ferroelectric capacitors can be formed.

As described above, according to the present invention, the transfer transistor formed on the semiconductor substrate, the columnar storage electrode connected to one source / drain diffusion layer of the transfer transistor, and the dielectric film covering the surface of the storage electrode And a laminated film that surrounds the side surface of the storage electrode via the dielectric film and is formed by alternately laminating a plurality of insulating films and a plurality of plate electrodes, and the dielectric film is formed on the side wall of the storage electrode. A paraelectric film formed in the first region and a ferroelectric film formed in the second region of the side wall of the storage electrode, the storage electrode, the paraelectric film, and the paraelectric film being And a plate electrode that covers the first region of the storage electrode through which the paraelectric capacitor is formed, and the storage electrode, the ferroelectric film, and the plate that covers the second region of the storage electrode through the ferroelectric film the semiconductor memory of the ferroelectric capacitor by the electrodes are configured By configuring the location, it is possible to form a plurality of capacitors using one of the storage electrode. As a result, the number of capacitors for storing stored information can be increased without increasing the number of transfer transistors, so that the degree of integration can be improved. In addition, a plurality of capacitors can be provided on the sidewall of the storage electrode without reducing the degree of integration of the semiconductor memory device. In addition, a paraelectric capacitor and a ferroelectric capacitor can be formed using the side wall of the storage electrode.

A step of forming on the base substrate a plate electrode made of the first conductive film and having an opening reaching the base substrate; and a step of forming a paraelectric film on the side wall of the plate electrode in the opening. A step of embedding a second conductive film in the opening to form a first storage electrode made of the second conductive film, and a plurality of insulating films and a plurality of conductive films on the first storage electrode and the plate electrode Forming a plurality of plate electrodes made of a plurality of conductive films, and forming a second opening reaching the first storage electrode in the stacked film. And forming a ferroelectric film on the side wall of the laminated film in the second opening, and embedding a third conductive film in the second opening to form the first storage electrode made of the third conductive film. Forming a second storage electrode connected to the semiconductor memory device; If concrete, it is possible to form the paraelectric capacitor utilizing the sidewalls of the first storage electrode, and a plurality of ferroelectric capacitors using the sidewalls of the second storage electrode.

Also, a step of forming a columnar first storage electrode made of a first conductive film on a base substrate, a step of forming a paraelectric film on a side wall of the first storage electrode, and a first storage electrode Forming a first plate electrode on the side wall of the first storage electrode through the paraelectric film , and a plurality of insulating films and a plurality of conductive films on the first storage electrode and the plate electrode, Forming a laminated film formed by alternately laminating layers, forming a second opening reaching the first storage electrode in the laminated film, and forming a plurality of plate electrodes made of a plurality of conductive films; , Forming a ferroelectric film on the side wall of the laminated film in the second opening, and embedding a third conductive film in the second opening and connecting the first storage electrode made of the third conductive film If the semiconductor memory device is manufactured by the step of forming the formed second storage electrode, the columnar first Even in the case of forming the product electrode before the first plate electrode, a paraelectric capacitor utilizing the sidewalls of the first storage electrode, a plurality of ferroelectric utilizing the sidewalls of the second storage electrode Capacitors can be formed.

[First Embodiment]
The semiconductor memory device and the manufacturing method thereof according to the first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a circuit diagram showing the structure of the semiconductor memory device according to the present embodiment, FIG. 2 is a circuit diagram used for transferring stored information between the capacitor C1 and the capacitor C2, and FIG. 3 is a semiconductor memory according to the present embodiment. FIG. 4 to FIG. 7 are process cross-sectional views illustrating the method for manufacturing the semiconductor memory device according to the present embodiment.

[1] Circuit Configuration of Memory Cell As shown in FIG. 1, in the semiconductor memory device according to the present embodiment, the gate G is connected to the word line WL, and one source / drain S / D is connected to the bit line BL. A MOS transistor Tr (transfer transistor Tr), a capacitor C1 having a dielectric as a paraelectric film having one electrode connected to the other source / drain S / D of the transfer transistor Tr, and the other source of the transfer transistor Tr / Capacitor C2 using a ferroelectric film having one electrode connected to drain S / D as a dielectric. The other electrode of the capacitor C1 is grounded, and the plate line PL is connected to the other electrode of the capacitor C2. Both positive and negative potentials can be applied to the plate line PL, and the plate line PL can be made floating.

  As described above, in the semiconductor memory device according to the present embodiment, one memory cell is configured by one transfer transistor Tr and two capacitors C1 and C2, and the capacitor C1 has the same structure as a capacitor in a DRAM. It is characterized in that C2 has the same structure as a capacitor in FRAM.

  By configuring the semiconductor memory device in this way, the transfer transistor Tr can be shared, so that the degree of integration can be improved compared to a conventional semiconductor memory device in which a DRAM and an FRAM are mixedly mounted. In particular, according to the structure of the semiconductor memory device described later, the FRAM capacitor C2 can be provided without sacrificing the integration degree of the conventional DRAM.

  Further, by configuring the semiconductor memory device in this way, it is possible to obtain both high reliability of DRAM and non-volatile characteristics of FRAM.

  The paraelectric material referred to in the present specification means a dielectric material having no hysteresis characteristic, and is an expression including a high dielectric constant film generally used in a DRAM. On the other hand, a ferroelectric means a dielectric having hysteresis characteristics. However, even if it is a ferroelectric, it does not have hysteresis characteristics when used at a voltage below the remanent polarization point (points a and c in FIG. 19). A ferroelectric film can also be used as the dielectric film of the capacitor C1.

[2] Operating Principle (a) Write / Read Method in DRAM Mode As shown in FIG. 1, the semiconductor memory device according to the present embodiment includes a DRAM capacitor C1 and an FRAM capacitor C2 in one transfer transistor Tr. It is connected and can be used in the same way as a DRAM using only the DRAM capacitor C1 (hereinafter, such a method of use is referred to as a DRAM mode).

  In order to use the semiconductor memory device according to the present embodiment in the DRAM mode, the plate line PL connected to the capacitor C2 of the FRAM may be set in a floating state. In this way, even if the transfer transistor Tr is turned on and the potential of the bit line BL is applied to the capacitor C2, the other electrode connected to the plate line PL is floating, so that the ferroelectric body No potential is applied to the membrane. As a result, in the circuit of FIG. 1, it can be seen that the capacitor C2 is not electrically connected, and can be used as a normal DRAM composed of one transistor and one capacitor. In addition, since no voltage is applied to the capacitor C2, fatigue deterioration of the ferroelectric film does not occur.

  It is also effective to short-circuit the plate line with the bit line BL or set the potential of the plate line PL so that the plate line PL and the bit line BL have the same potential instead of floating the plate line PL. It is. In this way, since both electrodes of the capacitor C2 are always at substantially the same potential, the capacitor C2 is not charged / discharged, and the influence of the capacitor C2 can be ignored.

  Hereinafter, an example of an information writing / reading method in the DRAM mode will be described.

  When writing storage information to the capacitor C1, after applying a voltage (High or Low) corresponding to information to be written to the bit line BL, a predetermined voltage is applied to the word line WL to turn on the transfer transistor Tr, The capacitor C1 is charged with electric charge. When the charge of the capacitor C1 is charged and then the voltage of the word line WL is lowered to turn off the transfer transistor Tr, the charge of the capacitor C1 is blocked by the escape path, and this charge is held for a while. As a result, the stored information is written.

  On the other hand, the storage information is read by applying a voltage to the word line WL with the bit line BL in a floating state to turn on the transfer transistor Tr and outputting the charge of the capacitor to the bit line BL. When the charge stored in the capacitor C1 is output to the bit line BL, the potential of the bit line BL slightly changes according to this charge. The potential of the bit line BL thus changed and the potential of the bit line (not shown) connected to the dummy cell (not shown) are compared by a sense amplifier and stored in the capacitor C1 due to the relationship between the potential levels. It is possible to read out whether the stored information is “1” or “0”. The sense amplifier senses and amplifies this slight potential difference and has a function of returning to a specified voltage value corresponding to High or Low.

  In the above description of the operation, the case where the potential of the plate line PL is made floating has been described. However, the potential of the plate line PL may be set to a low voltage that does not cause polarization inversion of the ferroelectric.

(B) Refresh operation in the DRAM mode In the DRAM, the charge stored in the capacitor is lost in an extremely short time of about 100 ms due to electric leakage. It is necessary to perform a so-called refresh operation that is once read and rewritten.

  In the semiconductor memory device according to the present embodiment, the plate line PL can be handled in the same manner as a normal DRAM by making the plate line PL floating, and the refresh operation can also be performed as usual.

(C) Write / Read Method in FRAM Mode As shown in FIG. 1, in the semiconductor memory device according to the present embodiment, a DRAM capacitor C1 and an FRAM capacitor C2 are connected to one transfer transistor Tr. It can be used in the same manner as the FRAM using only the capacitor C2 of the FRAM (hereinafter, such a usage method is referred to as an FRAM mode).

  In order to use the semiconductor memory device according to the present embodiment in the FRAM mode, the cell plate of the capacitor C1 of the DRAM may be fixed to a predetermined voltage (for example, grounded) or preferably floated. When the potential of the cell plate of the capacitor C1 is fixed, the operation of storing and releasing the charge in the capacitor C1 is repeated simultaneously with the writing / reading of the capacitor C2, but the number of times of writing / reading of the capacitor C1 is repeated. Can be considered virtually infinite in relation to FRAM, so fatigue degradation of capacitor C1 can be ignored. However, since the capacitance of the capacitor C1 acts as an unnecessary parasitic capacitance that is parasitic on the bit line when the capacitor C2 is operated, the sensitivity and noise resistance when reading information are reduced, and the operation speed is also reduced. There is a fear. Therefore, it is electrically desirable that the cell plate of the capacitor C1 be floating. However, this requires a further extraction electrode, which may lead to a decrease in the overall integration. Which structure is adopted is preferably selected according to the characteristics required for the device, etc., depending on the trade-off between the electrical characteristics and the degree of integration.

  Hereinafter, an example of an information writing / reading method in the FRAM mode will be described.

  When writing stored information to the capacitor C2, a voltage having a polarity corresponding to the information to be written and a potential difference sufficient for the ferroelectric film to reverse the polarization is applied between the bit line BL and the plate line PL. After the application, a predetermined voltage is applied to the word line WL to turn on the transfer transistor Tr, and the ferroelectric film is polarized in a predetermined direction to store polarization charges in the capacitor C2. Thereby, stored information is written in the capacitor C2.

  In order to store the storage information “1” in the capacitor C2, for example, a positive potential may be applied to the bit line BL and a zero or negative potential may be applied to the plate line PL. Further, when storing the storage information “0” in the capacitor C2, for example, a zero or minus potential may be applied to the bit line BL, and a plus potential may be applied to the plate line PL.

  On the other hand, the reading of the stored information is basically the same as in the DRAM mode, in which the voltage is applied to the word line WL with the bit line BL floating, the transfer transistor Tr is turned on, and the voltage applied to the capacitor C2. Is applied by reading the charge appearing on the bit line BL by a sense amplifier. When the charge stored in the capacitor C2 is output to the bit line BL, the potential of the bit line BL slightly changes according to the charge stored in the capacitor C2. The potential of the bit line BL thus changed and the potential of the bit line (not shown) connected to the dummy cell (not shown) are compared by a sense amplifier and stored in the capacitor C2 due to the relationship between the potential levels. It is possible to read out whether the stored information is “1” or “0”. The sense amplifier senses and amplifies this slight potential difference and has a function of returning to a specified voltage value corresponding to High or Low.

(D) Method of Transferring Storage Information of Capacitor C1 to Capacitor C2 In the semiconductor memory device according to the present embodiment, two capacitors C1 and C2 are connected to one transfer transistor Tr, in other words, to the same address. The capacitor C1 that holds the memory according to the principle of DRAM and the capacitor C2 that holds the memory according to the principle of FRAM are provided. Therefore, although twice the information can be held per address, there is only one transfer gate for exchanging information, and these two pieces of information cannot be handled simultaneously.

  On the other hand, the merit of configuring the semiconductor memory device as described above is that the frequently used data can be used in the same manner as a normal DRAM by storing it in the capacitor C1, and the latest information stored in the capacitor C1. Is transferred to the capacitor C2 and can be used as a nonvolatile memory.

  In order to transfer the stored information of the capacitor C1 to the capacitor C2, for example, the circuit shown in FIG. 2 can be used.

  Similarly to the semiconductor memory device shown in FIG. 1, a word line WL, a bit line BL, and a plate line PL are connected to the memory cell MC including the transfer transistor Tr and the capacitors C1 and C2. A sense amplifier SA is connected to the bit line BL. A bit line BL ′ connected to the dummy cell DC is connected to the sense amplifier SA. An inverter circuit INV for inverting the signal of the bit line BL and applying it to the plate line PL is connected between the bit line BL and the plate line PL via a transistor Tr1.

  As described above, the circuit shown in FIG. 2 is characterized in that the signal of the bit line BL can be inverted and applied to the plate line PL. By configuring the circuit in this manner, the plate line PL can be in a floating state when the transistor Tr1 is in an OFF state, and a signal opposite to the bit line BL is applied to the plate line PL when the transistor Tr1 is in an ON state. Can be applied.

  Next, a method for transferring the stored information of the capacitor C1 to the capacitor C2 using the circuit of FIG.

  First, the storage information of the capacitor C1 is read out in the same manner as the normal DRAM mode refresh operation. At this time, the potential of the bit line BL changes according to the read storage information.

  Next, the sense amplifier SA compares the potential of the bit line BL thus changed with the potential of the bit line BL ′ connected to the dummy cell DC, and whether the stored information stored in the capacitor C1 is “1”. It is determined whether it was “0”.

  Subsequently, the potential of the bit line BL is adjusted to a specified voltage based on the determined result. That is, the sense amplifier SA returns the voltage of the bit line BL to a voltage corresponding to the storage information “1” or a voltage corresponding to the storage information “0”.

  Thereafter, a DRAM / FRAM switching signal is applied to turn on the transistor Tr1, and an inverted signal of the signal applied to the bit line BL is applied to the plate line PL.

  At this time, it is desirable to associate the operating voltage corresponding to the information “1” and “0” in the DRAM mode with the operating voltage corresponding to the information “1” and “0” in the FRAM mode. By doing so, the capacitor C2 is in a state similar to the write state in the FRAM mode described above, and the same storage information as the storage information stored in the capacitor C1 is stored in the capacitor C2. When a potential is applied to the plate line PL, the potential of the bit line BL is lowered by charging the capacitor C2. However, a slight difference is amplified by the sense amplifier SA and returned to the specified potential. Thus, the capacitor C2 can be charged.

  Thereby, the storage information stored in the capacitor C1 can be transferred to the capacitor C2.

(E) Method of Transferring Storage Information of Capacitor C2 to Capacitor C1 According to the circuit of FIG. 2, the storage information of capacitor C2 can also be transferred to capacitor C1. If the stored information saved in the capacitor C2 is transferred to the capacitor C1, it becomes easy to quickly start up the apparatus.

  First, in the same manner as the information reading method in the normal FRAM mode, a positive potential is applied to the bit line BL, a zero potential is applied to the plate line, and then a predetermined voltage is applied to the word line WL to set the transfer transistor Tr. Turn on. As a result, charges corresponding to the stored information stored in the capacitor C2 appear on the bit line BL, and the potential of the bit line BL changes to a very small amount.

  Next, the sense amplifier SA compares the potential of the bit line BL thus changed with the potential of the bit line BL ′ connected to the dummy cell DC, and whether the stored information stored in the capacitor C1 is “1”. It is determined whether it was “0”.

  Subsequently, the potential of the bit line BL is adjusted to a specified voltage based on the determined result. That is, the sense amplifier SA returns the voltage of the bit line BL to a voltage corresponding to the storage information “1” or a voltage corresponding to the storage information “0”.

  At this time, it is desirable to associate the operating voltage corresponding to the information “1” and “0” in the DRAM mode with the operating voltage corresponding to the information “1” and “0” in the FRAM mode. By doing so, the capacitor C1 is in a state similar to the write state in the above-described DRAM mode, and the same storage information as that stored in the capacitor C2 is stored in the capacitor C1.

  When reading the information of the capacitor C2, if the plate line of the capacitor C1 is grounded, the potential appearing on the bit line BL may be influenced by the charge stored in the capacitor C1. In such a case, it is desirable to leave the plate line of the capacitor C1 floating. In this case, the capacitor C1 can be charged with a predetermined voltage by reading the information of the capacitor C2 and grounding the plate line of the capacitor C1 after the potential of the bit line BL is changed. If the transfer transistor Tr is turned off in this state, the charge of the capacitor C1 is held for a while.

  Thereby, the storage information stored in the capacitor C2 can be transferred to the capacitor C1.

  Thereafter, if the plate line of the capacitor C2 is floated by turning off the transistor Tr1, the normal DRAM mode can be entered.

  Note that the information stored in the capacitor C2 is destroyed because the FRAM is destructively read, but the stored information is retained by performing refresh in the DRAM mode.

[3] Specific Structure of Semiconductor Memory Device A specific structure of the semiconductor memory device for realizing the circuit shown in FIG. 1 will be described with reference to FIG.

  An element isolation film 12 for defining an element region is formed on the silicon substrate 10. A transfer transistor having a gate electrode 14 and a source / drain diffusion layer 16 is formed on the silicon substrate on which the element isolation film 12 is formed. The gate electrode 14 also functions as a word line that doubles as the gate electrodes of a plurality of transfer transistors extending in the direction perpendicular to the paper surface. On the silicon substrate 10 on which the transfer transistor is formed, an interlayer insulating film 18 in which an electrode plug 20 connected to the source / drain diffusion layer 16 is embedded is formed. A conductive film 24 that functions as a plate electrode of the capacitor C1 and an interlayer insulating film 26 are formed on the interlayer insulating film 18 with a silicon nitride film 22 interposed therebetween. An opening 28 reaching the electrode plug 20 is formed in the silicon nitride film 22, the conductive film 24, and the interlayer insulating film 26. A paraelectric film (not shown) that functions as a dielectric film of the capacitor C1 is formed on the sidewall of the opening 28. A storage electrode 30 connected to the electrode plug 20 is embedded in the opening 28, and thus a capacitor C 1 including the conductive film 24, the paraelectric film, and the storage electrode 30 is configured. On the storage electrode 30, a conductive film 32 having a good compatibility with the ferroelectric film is formed. On the interlayer insulating film 26 and the conductive film 32, a ferroelectric film 34 serving as a dielectric film of the capacitor C2 is formed. On the ferroelectric film 34, a plate electrode 38 of the capacitor C2 is formed. Thus, the capacitor C2 including the storage electrode 30 (conductive film 32), the ferroelectric film 34, and the plate electrode 38 is configured. Although not shown in FIG. 3, the bit line is connected to the source / drain diffusion layer 16 on the side to which the electrode plug 20 is not connected, and intersects with the word line formed by the gate electrode 14. It is formed to extend. For example, the bit line can be formed in a lower layer portion of the interlayer insulating film 18 or on an insulating film (not shown) covering the plate electrode 38. In the following embodiments, description of the bit lines is omitted, but they can be formed in the same manner.

  As described above, the semiconductor memory device according to the present embodiment is characterized in that the capacitor C1 is configured using the side wall portion of the columnar storage electrode 30, and the capacitor C2 is configured using the upper surface portion of the storage electrode. There is. By configuring the semiconductor memory device in this manner, the DRAM capacitor C1 and the FRAM capacitor C2 can be formed without reducing the integration density of the DRAM.

[4] Manufacturing Method of Semiconductor Memory Device First, the element isolation film 12 is formed on the silicon substrate 10 by, for example, a normal LOCOS method.

  Next, a MOS transistor having a gate electrode 14 and a source / drain diffusion layer 16 is formed in the element region defined by the element isolation film 12 in the same manner as a normal MOS transistor forming method. This MOS transistor is used as the transfer transistor Tr.

  Subsequently, a silicon oxide film is deposited on the entire surface by, eg, CVD, and the surface thereof is flattened to form an interlayer insulating film 18 made of a silicon oxide film.

  Thereafter, a contact hole reaching the source / drain diffusion layer 16 to which the capacitors C1 and C2 are connected is formed in the interlayer insulating film 18 by a normal lithography technique and etching technique.

  Next, a doped polysilicon film is deposited by, eg, CVD method and etched back to form the electrode plug 20 embedded in the contact hole (FIG. 4A).

  Subsequently, a silicon nitride film 22 used as an etching stopper film in a later process is formed on the interlayer insulating film 18 in which the electrode plug 20 is embedded.

  Thereafter, a conductive film 24 is deposited on the silicon nitride film 22 as an electrode material for the capacitor C1. As the conductive film 24, for example, a doped polysilicon film can be applied. As the electrode material, it is desirable to select a conductive material having good compatibility with a capacitor dielectric film to be formed later. Depending on the compatibility with the dielectric film, in addition to the doped polysilicon film, a tungsten film, a tungsten oxide film, a tungsten nitride film, a ruthenium film, a ruthenium oxide film, a platinum film, a titanium nitride film, an iridium film, an iridium oxide film, or the like is used. You can also Further, a stacked film of these films may be used.

  Next, an interlayer insulating film 26 made of an insulating material such as a silicon nitride film, a silicon oxide film, or an alumina film is formed on the conductive film 24 by, eg, CVD or sputtering (FIG. 4B).

  Subsequently, the interlayer insulating film 26 and the conductive film 24 are etched using a normal lithography technique and an etching technique to form an opening 28 that exposes the electrode plug 20 (FIG. 5A). At this time, if the interlayer insulating film 26 and the conductive film 24 are etched under conditions that allow etching selectivity with respect to the silicon nitride film 22, and then the silicon nitride film 22 is removed, the underlying structure of the electrode plug 20 and the like. The opening 28 can be formed without damaging the substrate. If the etching of the interlayer insulating film 26 and the conductive film 24 can be stopped with good controllability, the silicon nitride film 22 is not necessarily provided.

  In FIG. 5A, the conductive film 24 seems to be divided by the opening 28, but in a planar layout, they are connected to each other in a mesh shape and used as a single electrode (plate electrode). be able to.

  Thereafter, a silicon nitride film having a thickness of about 5 nm is deposited by, eg, CVD, and an oxidation process necessary to form a silicon oxide film of, eg, 20 nm is performed in a wet atmosphere, and silicon nitride to be a dielectric film of the capacitor C1 An oxide film (not shown) is formed.

  Next, the silicon oxynitride film thus formed is etched back, and the silicon oxynitride film is left only on the side wall of the opening 28. As a result, the electrode plug 20 is exposed again in the opening 28.

  Subsequently, a conductive film is deposited by, for example, a CVD method, and thereafter, the conductive film is removed by an etch back or CMP method until the interlayer insulating film 26 is exposed, so that the conductive film remains only in the opening 28. Thus, the columnar storage electrode 30 embedded in the opening 28 is formed (FIG. 5B). The storage electrode 30 functions as a storage electrode of both the capacitors C1 and C2, and is connected to the source / drain diffusion layer 16 of the transfer transistor via the electrode plug 20.

  As the conductive film for forming the storage electrode 30, it is desirable to use a conductive material that is compatible with the material of the dielectric film constituting the capacitor C 1, as in the conductive film 24.

  By forming the storage electrode 30 in this way, the storage electrode 30 is surrounded by the conductive film 24 formed through the silicon oxynitride film formed on the inner wall of the opening 28. That is, the capacitor C1 is constituted by the plate electrode made of the conductive film 24, the dielectric film made of the silicon oxynitride film, and the storage electrode 30. A semiconductor memory device having a columnar storage electrode is described in detail, for example, in Japanese Patent Application No. 9-185263 by the same applicant.

  Thereafter, the storage electrode 30 is etched back, and the surface of the storage electrode 30 is slightly retreated from the surface of the interlayer insulating film 26 (FIG. 6A). Note that the amount by which the storage electrode 30 is retracted is preferably smaller than the thickness of the interlayer insulating film 26. If the storage electrode 30 is retracted to a lower layer than the interlayer insulating film 26, the dielectric film between the storage electrode 30 and the conductive film 24 may be damaged during this etching process, and the characteristics of the capacitor may be impaired. Because there is.

  Next, a conductive film compatible with the dielectric film for forming the capacitor C2 is deposited by CVD, for example, and then the conductive film is removed by etch back or CMP until the interlayer insulating film 26 is exposed. The conductive film is left only in the portion 28. Thus, the conductive film 32 formed on the storage electrode 30 is formed (FIG. 6B). As the conductive film 32, for example, a ruthenium film, a ruthenium oxide film, a platinum film, an iridium film, an iridium oxide film, a titanium nitride film, a tungsten nitride film, or the like that is compatible with a ferroelectric film such as PZT or Y1 is used. it can.

  Note that the conductive film having compatibility with the dielectric film referred to in this specification is a conductive film that does not deteriorate the characteristics in the stage of forming the dielectric film and does not adversely affect the characteristics of the dielectric film. Means. For example, it is desirable to apply a conductive film having excellent oxidation resistance to a dielectric film that is formed in an oxidizing atmosphere. Also, many of the high dielectric constant films and ferroelectric films are oxides, but oxygen in these films is generally very easy to escape, so the conductive film in contact with these dielectric films has oxygen in the dielectric film. It is desirable to apply a conductive film that does not easily desorb.

  The steps shown in FIGS. 6A to 6B are methods for alleviating the case where the compatibility between the material forming the storage electrode 30 and the dielectric film forming the capacitor C2 is poor. This is not always necessary when the material constituting the electrode 30 and the dielectric film constituting the capacitor C2 are compatible. Further, the conductive film 32 is not necessarily formed by being embedded in the opening 28, and the conductive film 32 may be formed by using a normal lithography technique and an etching technique.

  Subsequently, a ferroelectric film 34 serving as a dielectric film of the capacitor C2 is formed on the interlayer insulating film 26 and the conductive film 32. For example, a CVD method, a sputtering method, a laser ablation method, a sol-gel method, or the like can be used for film formation. For example, PZT, Y1 or the like can be applied as the ferroelectric film.

  Note that after the ferroelectric film 34 is formed, annealing or oxidation for improving crystallinity such as PZT or Y1 or adding sufficient oxygen may be performed.

  Thereafter, the ferroelectric film 34 and the interlayer insulating film 26 are etched by using a normal lithography technique and an etching technique, and a contact hole for connecting a plate line connected to the plate electrode of the capacitor C1 made of the conductive film 24. 36 is formed (FIG. 7A).

  Next, a capacitor formed on the conductive film 32 via the ferroelectric film 34 is deposited by depositing a conductive film compatible with the ferroelectric film 34 by, for example, the CVD method, and patterning by a normal lithography technique and an etching technique. A plate electrode 38 of C2 and a plate line 40 connected to the conductive film 24 which is a plate electrode of the capacitor C1 through the contact hole 36 are formed (FIG. 7B). As the plate electrode 38 and the plate line 40, for example, a ruthenium film, a ruthenium oxide film, a platinum film, an iridium film, an iridium oxide film, a titanium nitride film, a tungsten nitride film, or the like can be applied.

  By manufacturing the semiconductor memory device in this manner, the DRAM capacitor C1 including the storage electrode 30, the dielectric film, and the conductive film 24 (plate electrode), the storage electrode 30, the ferroelectric film 34, and the plate electrode 38 are used. The FRAM capacitor C2 can be formed, and the semiconductor memory device shown in FIG. 1 can be realized.

  As described above, according to the structure and the manufacturing method of the semiconductor memory device according to the present embodiment, since the FRAM capacitor C2 is formed on the DRAM capacitor C1, the circuit shown in FIG. Can be realized.

  In the above embodiment, the capacitor C1 is formed on the side wall of the storage electrode 30 and the capacitor C2 is formed on the upper surface of the storage electrode 30 based on the following reasons.

  The paraelectric film generally used as the dielectric film of the DRAM capacitor C1 has a lower dielectric constant than the ferroelectric film generally used as the dielectric film of the FRAM capacitor C2 (for example, PZT 1000, Y1). 4 of nitrided oxide film, 40 of tantalum oxide film, and 300 of BST).

  In addition, the technology for thin film formation is not well established for ferroelectric films, and thin film formation makes it difficult to use a large amount of leakage current. It is well established, and even a film thickness of about 4 nm can be used sufficiently. On the other hand, in the 1G and 4G class devices, since the interval between the storage electrodes 30 is expected to be narrowed to about 0.2 to 0.1 μm, a plate electrode made of the conductive film 24 is formed between the storage electrodes 30. In consideration of this, it is necessary to form a ferroelectric film having a thickness of about 30 nm or less, but it is assumed that such a thinning becomes difficult.

  In addition, since a sol-gel method generally used for forming a ferroelectric film uses a spin coater, it is difficult to form a thin film on the side wall because the film forming material tends to accumulate on the convex portions.

  Therefore, a paraelectric film that has a low dielectric constant and can be easily formed into a thin film and can be easily formed on the side wall portion is formed on the side wall of the storage electrode 30 that can secure a large area, thereby forming the dielectric film of the capacitor C1. A ferroelectric film constituting the capacitor C2 is formed on the upper surface of the storage electrode 30 that can be easily formed by coating.

  Therefore, if the above problem can be solved, it is not always necessary to form the capacitor C1 on the side wall portion of the storage electrode 30 and the capacitor C2 on the upper surface portion, and the capacitor may be configured to be reversed. Good.

[Second Embodiment]
A semiconductor memory device and a manufacturing method thereof according to the second embodiment of the present invention will be described with reference to FIGS. The same components as those of the semiconductor memory device and the manufacturing method thereof according to the first embodiment shown in FIGS. 1 to 7 are denoted by the same reference numerals, and description thereof is omitted or simplified.

  8 is a circuit diagram showing the structure of the semiconductor memory device according to the present embodiment, FIG. 9 is a schematic cross-sectional view showing the structure of the semiconductor memory device according to the present embodiment, and FIGS. 10 to 12 show the manufacture of the semiconductor memory device according to the present embodiment. It is process sectional drawing which shows a method.

[1] Circuit Configuration of Memory Cell The semiconductor memory device according to the present embodiment is characterized in that a plurality of FRAM capacitors C2 are provided in the semiconductor memory device according to the first embodiment shown in FIG. That is, a paraelectric film is formed on the other source / drain S / D of the transfer transistor Tr in which the gate G is connected to the word line WL and one source / drain S / D is connected to the bit line BL. Are connected to one electrode of capacitors C2 ₁ , C2 ₂ ,... C2 _n each having a ferroelectric film as a dielectric film. The other electrode of the capacitor C1 is grounded, the capacitor C2 _1, C2 ₂ ... C2 _n each of the other electrode plate line PL ₁ of, PL _2, ... PL _n are connected. Both positive and negative potentials can be applied to the plate line PL, and the plate line PL can also be floated (FIG. 8A).

[2] Operating Principle The operating principle of the semiconductor memory device according to the present embodiment is basically the same as that of the semiconductor memory device according to the first embodiment. The difference is that the FRAM capacitors C2 ₁ , C2 ₂ ,... C2 _n can be read and written independently. Hereinafter, the merit of providing a plurality of capacitors C2 will be described.

  The capacitor C1 of the DRAM does not have a function of holding memory in a no-voltage state, and is always charged by applying a voltage to both ends of the capacitor, or in order to block the escape path of the charged charge. The electrode needs to be in a floating state. Therefore, when the DRAM capacitor C1 and the FRAM capacitor C2 are connected to one transfer transistor Tr as in the first embodiment, the stored information in the capacitor C1 is destroyed when the capacitor C2 is read and written. It becomes.

  On the other hand, since the capacitor C2 of the FRAM stores information by the polarization charge of the ferroelectric substance, the stored information can be held even when the apparatus is turned off. That is, even if information is written to or read from the capacitor C1, the information stored in the capacitor C2 is not falsified.

  Even when a plurality of capacitors of FRAM are provided, when the voltage is not applied to the plate line of another capacitor when reading / writing one capacitor C2, the stored information of the other capacitor is used without being falsified. can do.

Therefore, when the semiconductor memory device shown in FIG. 8 is configured, for example, the plate line PL of the target capacitor C2 is sequentially selected one by one, voltage is sequentially applied thereto, and information is written to and read from the capacitor C2. , The information of all capacitors C2 ₁ , C2 ₂ ,... C2 _n can be taken in and out.

  Thus, according to the semiconductor memory device according to the present embodiment, the storage capacity can be greatly increased. Note that by configuring the semiconductor memory device as will be described later, the number of capacitors C2 connected to one transfer transistor can be increased without expanding the planar layout, so that the degree of integration of the memory device is not impaired.

As described previously, when reading the information in the capacitor C2, when the plate line PL ₀ of the capacitor C1 is grounded, if the potential appearing on the bit line BL is influenced by charge stored in the capacitor C1 There is. In such a case, a plate line PL ₀ connected to the plate electrode of the capacitor C1 is provided as shown in FIG. 8B, and the plate line PL ₀ is brought into a floating state when reading information from the capacitor C2. It is desirable to do. Further, the potential of the plate line PL ₀ may be set to substantially the same potential as the potential of the bit line BL.

[3] Specific Structure of Semiconductor Memory Device A specific structure of the semiconductor memory device for realizing the circuit shown in FIG. 8 will be described with reference to FIG.

  An element isolation film 12 for defining an element region is formed on the silicon substrate 10. A transfer transistor having a gate electrode 14 and a source / drain diffusion layer 16 is formed on the silicon substrate on which the element isolation film 12 is formed. The gate electrode 14 also functions as a word line that doubles as the gate electrodes of a plurality of transfer transistors extending in the direction perpendicular to the paper surface. On the silicon substrate 10 on which the transfer transistor is formed, an interlayer insulating film 18 in which an electrode plug 20 connected to the source / drain diffusion layer 16 is embedded is formed. A conductive film 24 that functions as a plate electrode of the capacitor C1 and an interlayer insulating film 26 are formed on the interlayer insulating film 18 with a silicon nitride film 22 interposed therebetween. An opening 28 reaching the electrode plug 20 is formed in the conductive film 24 and the interlayer insulating film 26. A paraelectric film functioning as a dielectric film of the capacitor C <b> 1 is formed on the side wall of the opening 28. A storage electrode 30 connected to the electrode plug 20 is embedded in the opening 28, and thus a capacitor C 1 including the conductive film 24, the paraelectric film, and the storage electrode 30 is configured. On the interlayer insulating film 26, interlayer insulating films 42a, 42b, 42c and conductive films 44a, 44b are alternately stacked. An opening 46 reaching the storage electrode 30 is formed in the laminated film composed of the interlayer insulating film 42 and the conductive film 44. A ferroelectric film functioning as a dielectric film of the capacitor C2 is formed on the side wall of the opening 46. A storage electrode 48 connected to the storage electrode 30 is embedded in the opening 46, and thus a plurality of capacitors C 2 including the conductive film 44, the ferroelectric film, and the storage electrode 48 are formed. An interlayer insulating film 50 is formed on the interlayer insulating film 42c. On the interlayer insulating film 50, a plate line 54 connected to the conductive film 24 via the interlayer insulating films 42, 50 and a plate line 56 connected to the conductive film 44 via the interlayer insulating films 26, 42, 50 are provided. And are formed.

  As described above, in the semiconductor memory device according to the present embodiment, the capacitor C1 is configured using the side wall portion of the columnar storage electrode 30, and the plurality of capacitors C2 is configured using the side wall portion of the columnar storage electrode 48. There is a feature. By configuring the semiconductor memory device in this manner, the DRAM capacitor C1 and the plurality of FRAM capacitors C2 can be formed without reducing the integration density of the DRAM.

[4] Manufacturing Method of Semiconductor Memory Device First, in the same way as in the manufacturing method of the semiconductor memory device according to the first embodiment shown in FIGS. 4A to 5B, for example, the conductive film 24, the interlayer insulating film 26, and the like. The storage electrode 30 embedded in the opening 28 formed in the laminated film is formed.

  Next, the interlayer insulating film 42 and the conductive film 44 are alternately deposited on the interlayer insulating film 26 and the storage electrode 30 by, eg, CVD (FIG. 10A).

  In the semiconductor memory device shown in FIG. 10A, an interlayer insulating film 42a, a conductive film 44a, an interlayer insulating film 42b, a conductive film 44b, and an interlayer insulating film 42c are sequentially deposited. The conductive film 44 is a film that becomes a plate electrode of the capacitor C2 of the FRAM, and the capacitors C2 corresponding to the number of the conductive films 44 can be formed on the same storage electrode.

  Further, in the semiconductor memory device shown in FIG. 10A, the conductive film 44 is formed into a predetermined shape after the conductive film 44 is deposited because the electrodes drawn from the plate electrodes (conductive films 24 and 44) are formed in a later process. Patterned.

  Subsequently, an opening 46 reaching the storage electrode 30 is formed in the laminated film composed of the insulating film 42 and the conductive film 44 thus formed.

  Thereafter, a ferroelectric film (not shown) constituting the dielectric film of the capacitor C2 of the FRAM is formed by, for example, a solution vaporization type CVD method.

  Next, the ferroelectric film thus formed is etched back, and the ferroelectric film is left only on the side wall of the opening 46. As a result, the storage electrode 30 is exposed again in the opening 46.

  Subsequently, a conductive film is deposited by, for example, a CVD method, and thereafter, the conductive film is removed by an etch back or CMP method until the interlayer insulating film 42 c is exposed, so that the conductive film remains only in the opening 46. Thus, the columnar storage electrode 48 embedded in the opening 46 is formed (11 (a)). The storage electrode 48 functions as a storage electrode of the capacitor C2, and is connected to the source / drain diffusion layer 16 of the transfer transistor via the storage electrode 30 and the electrode plug 20. Accordingly, it is desirable that the conductive film to be the storage electrode 48 be a film compatible with the ferroelectric film, for example, a ruthenium film, a ruthenium oxide film, a platinum film, an iridium film, an iridium oxide film, a titanium nitride film, or a tungsten nitride film. Etc. can be applied.

  By forming the storage electrode 48 in this way, a plurality of capacitors C2 including the storage electrode 48, the ferroelectric film, and the conductive film 44 are formed on the inner wall portion of the opening 46.

  Thereafter, an interlayer insulating film 50 is formed on the interlayer insulating film 42c and the storage electrode 48 by, for example, a CVD method.

  Next, contact holes 52 reaching the conductive films 44 and 24 functioning as plate electrodes are formed in the interlayer insulating films 50 and 42 (FIG. 11B).

  Subsequently, a conductive film is deposited by, for example, a CVD method, patterned by a normal lithography technique and an etching technique, and contacted with a plate line 54 connected to the conductive film 24 which is a plate electrode of the capacitor C1 through a contact hole 52, and a contact A plate line 56 connected to the conductive film 44, which is the plate electrode of the capacitor C2, through the hole 52 is formed (FIG. 12).

  By manufacturing the semiconductor memory device in this manner, the DRAM capacitor C1 including the storage electrode 30, the dielectric film, and the conductive film 24 (plate electrode), the storage electrode 48, the ferroelectric film, and the conductive film 44 (plate) A plurality of FRAM capacitors C2 made of electrodes) can be formed, and the semiconductor memory device shown in FIG. 8 can be realized.

  As described above, according to the structure and the manufacturing method of the semiconductor memory device according to the present embodiment, the plurality of FRAM capacitors C2 are formed on the DRAM capacitor C1, so that the degree of integration of the DRAM is not sacrificed. A circuit can be realized.

[Third Embodiment]
A semiconductor memory device and a manufacturing method thereof according to the third embodiment of the present invention will be described with reference to FIGS. The same components as those of the semiconductor memory device and the manufacturing method thereof according to the first and second embodiments shown in FIGS. 1 to 12 are denoted by the same reference numerals, and description thereof is omitted or simplified.

  FIG. 13 is a circuit diagram showing the structure of the semiconductor memory device according to the present embodiment, FIG. 14 is a schematic sectional view showing the structure of the semiconductor memory device according to the present embodiment, and FIG. 15 shows the method for manufacturing the semiconductor memory device according to the present embodiment. It is process sectional drawing.

[1] Circuit Configuration of Memory Cell The semiconductor memory device according to the present embodiment is characterized in that the DRAM capacitor C1 is not provided in the semiconductor memory device according to the second embodiment shown in FIG. That is, a ferroelectric film is applied to the other source / drain S / D of the transfer transistor Tr in which the gate G is connected to the word line WL and one source / drain S / D is connected to the bit line BL. Capacitors C2 ₁ , C2 ₂ ,... C2 _n are connected. Capacitor C2 _1, C2 ₂ ... C2 _n each of the other electrode plate line PL ₁ of, PL _2, ... PL _n are connected. Both positive and negative potentials can be applied to the plate line PL, and the plate line PL can be floated (FIG. 13).

  By configuring the FRAM in this way and configuring the apparatus with the structure described later, it is possible to configure an extremely large capacity FRAM without expanding the planar layout.

[2] Specific Structure of Semiconductor Memory Device A specific structure of the semiconductor memory device for realizing the circuit shown in FIG. 13 will be described with reference to FIG.

  An element isolation film 12 for defining an element region is formed on the silicon substrate 10. A transfer transistor having a gate electrode 14 and a source / drain diffusion layer 16 is formed on the silicon substrate on which the element isolation film 12 is formed. The gate electrode 14 also functions as a word line that doubles as the gate electrodes of a plurality of transfer transistors extending in the direction perpendicular to the paper surface. On the silicon substrate 10 on which the transfer transistor is formed, an interlayer insulating film 18 and a silicon nitride film 22 in which an electrode plug 20 connected to the source / drain diffusion layer 16 is embedded are formed. On the silicon nitride film 22, interlayer insulating films 42a, 42b, 42c and conductive films 44a, 44b are alternately stacked. An opening 46 reaching the electrode plug 20 is formed in the laminated film formed of the interlayer insulating film 42 and the conductive film 44 and the silicon nitride film 22. A ferroelectric film functioning as a dielectric film of the capacitor C2 is formed on the side wall of the opening 46. A storage electrode 48 connected to the electrode plug 20 is embedded in the opening 46, and thus a plurality of capacitors C 2 including the conductive film 44, the ferroelectric film, and the storage electrode 48 are formed. An interlayer insulating film 50 is formed on the interlayer insulating film 42c. A plate line 56 connected to the conductive film 44 through the interlayer insulating films 42 and 50 is formed on the interlayer insulating film 50.

  As described above, the semiconductor memory device according to the present embodiment is characterized in that the plurality of capacitors C <b> 2 are configured using the side wall portion of the columnar storage electrode 48. By configuring the semiconductor memory device in this way, a large-capacity FRAM can be formed without expanding the planar layout.

[3] Manufacturing Method of Semiconductor Memory Device First, for example, in the same manner as the manufacturing method of the semiconductor memory device according to the first embodiment shown in FIG. 4A, the electrode plug 20 drawn from the source / drain diffusion layer 16 of the transfer transistor. Form.

  Next, in the same manner as in the method of manufacturing the semiconductor memory device according to the second embodiment, the silicon nitride film 22, the interlayer insulating film 42a, the conductive film 44a, the interlayer insulating film 42b, the conductive film 44b, and the interlayer insulating film are formed on the interlayer insulating film 18. A film 42c is sequentially deposited (FIG. 15A). As the number of repetitions of depositing the interlayer insulating film 42 and the conductive film 44 is increased, the number of capacitors C2 connected to one transfer transistor Tr can be increased.

  Subsequently, an opening 46 reaching the electrode plug 20 is formed in the laminated film formed of the insulating film 42 and the conductive film 44 thus formed.

  Thereafter, a ferroelectric film (not shown) constituting the dielectric film of the capacitor C2 of the FRAM is formed by, for example, a solution vaporization type CVD method.

  Next, the ferroelectric film thus formed is etched back, and the ferroelectric film is left only on the side wall of the opening 46. As a result, the electrode plug 20 is exposed again in the opening 46.

  Subsequently, a conductive film is deposited by, for example, a CVD method, and thereafter, the conductive film is removed by an etch back or CMP method until the interlayer insulating film 42 c is exposed, so that the conductive film remains only in the opening 46. Thus, the columnar storage electrode 48 embedded in the opening 46 is formed (15 (b)).

  By forming the storage electrode 48 in this way, a plurality of capacitors C2 including the storage electrode 48, the ferroelectric film, and the conductive film 44 are formed on the inner wall portion of the opening 46.

  Thereafter, an interlayer insulating film 50 is formed on the interlayer insulating film 42c and the storage electrode 48 by, for example, a CVD method.

  Next, a contact hole 52 reaching the conductive film 44 functioning as a plate electrode is formed in the interlayer insulating films 50 and 42.

  Subsequently, a conductive film is deposited by, for example, a CVD method, and patterned by a normal lithography technique and an etching technique to form a plate line 56 connected to the conductive film 44 that is the plate electrode of the capacitor C2 through the contact hole 52. (FIG. 15C).

  By manufacturing the semiconductor memory device in this way, a plurality of capacitors C2 made up of the storage electrode 48, the ferroelectric film, and the conductive film 44 (plate electrode) can be formed. The semiconductor memory device shown in FIG. Can be realized.

  As described above, according to the structure and the manufacturing method of the semiconductor memory device according to the present embodiment, a plurality of capacitors C2 formed by being accumulated in the vertical direction can be formed, so that a large-capacity FRAM can be configured. it can.

[Fourth Embodiment]
A semiconductor memory device and a manufacturing method thereof according to the fourth embodiment of the present invention will be described with reference to FIGS. The same components as those of the semiconductor memory device and the manufacturing method thereof according to the first to third embodiments shown in FIGS. 1 to 15 are denoted by the same reference numerals, and description thereof will be omitted or simplified.

  16 and 17 are process cross-sectional views illustrating the method for manufacturing the semiconductor memory device according to the present embodiment.

  In the method of manufacturing the semiconductor memory device according to the first embodiment, as shown in FIGS. 4A to 5B, when forming the storage electrode 30 and the plate electrode made of the conductive film 24, first, the conductive film is formed. 24 was formed, and then the storage electrode 30 was formed so as to be embedded in the opening 28 formed in the conductive film 24. However, the semiconductor memory device as shown in FIG. 3 can also be manufactured by forming the storage electrode 30 first.

  First, in the same manner as in the method of manufacturing the semiconductor memory device according to the first embodiment shown in FIG. 4A, the electrode plug 20 drawn from the source / drain diffusion layer 16 of the transfer transistor is formed (FIG. 16A). .

  Next, a conductive film that becomes the storage electrode 30 of the capacitor C1 and a conductive film 32 that is compatible with the ferroelectric film of the capacitor C2 are sequentially deposited and patterned using ordinary lithography and etching techniques, and the upper surface is conductive. A storage electrode 30 covered with the film 32 is formed (FIG. 16B).

  Subsequently, a conductive film 24 having a film thickness sufficient to cover the steps of the storage electrode 30 is deposited.

  Thereafter, the surface of the conductive film 24 is polished by CMP, for example, until the surface of the conductive film 32 is exposed. Thereby, the surface of the electrically conductive film 24 and the electrically conductive film 32 becomes substantially equal height, and a surface is planarized (FIG.16 (c)).

  Next, the surface of the conductive film 24 is etched back, and the surface of the conductive film 24 is slightly retracted (FIG. 17A).

  Subsequently, an insulating film is deposited by, for example, a CVD method, and this insulating film is polished by, for example, a CMP method until the surface of the conductive film 32 is exposed, thereby forming an interlayer insulating film 26 (FIG. 17B).

  Thereafter, the semiconductor memory device shown in FIG. 3 is manufactured in the same manner as the method for manufacturing the semiconductor memory device shown in FIGS.

  As described above, according to the present embodiment, the semiconductor memory device can also be manufactured by forming the conductive film 24 to be the plate electrode after forming the storage electrode 30.

  In the present embodiment, a modification of the method of manufacturing the semiconductor memory device according to the first embodiment shown in FIG. 3 has been described, but the same applies to the semiconductor memory device according to the second embodiment shown in FIG. Can do.

  A semiconductor memory device having a storage electrode having a columnar structure is described in detail, for example, in Japanese Patent Application No. 9-185263 by the same applicant. Various structures and manufacturing methods described in the specification can also be applied to the semiconductor memory device of the present invention.

1 is a circuit diagram showing a structure of a semiconductor memory device according to a first embodiment of the present invention. It is a circuit diagram used when transferring stored information between the capacitor C1 and the capacitor C2. 1 is a schematic cross-sectional view showing a structure of a semiconductor memory device according to a first embodiment of the present invention. FIG. 6 is a process cross-sectional view (part 1) illustrating the method for manufacturing the semiconductor memory device according to the first embodiment of the invention; FIG. 6 is a process cross-sectional view (part 2) illustrating the method for manufacturing the semiconductor memory device according to the first embodiment of the present invention; FIG. 9 is a process cross-sectional view (part 3) illustrating the method for manufacturing the semiconductor memory device according to the first embodiment of the present invention; FIG. 9 is a process cross-sectional view (part 4) illustrating the method for manufacturing the semiconductor memory device according to the first embodiment of the present invention; FIG. 6 is a circuit diagram showing a structure of a semiconductor memory device according to a second embodiment of the present invention. It is a schematic sectional drawing which shows the structure of the semiconductor memory device by 2nd Embodiment of this invention. It is process sectional drawing (the 1) which shows the manufacturing method of the semiconductor memory device by 2nd Embodiment of this invention. It is process sectional drawing (the 2) which shows the manufacturing method of the semiconductor memory device by 2nd Embodiment of this invention. It is process sectional drawing (the 3) which shows the manufacturing method of the semiconductor memory device by 2nd Embodiment of this invention. It is a circuit diagram which shows the structure of the semiconductor memory device by 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the structure of the semiconductor memory device by 3rd Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the semiconductor memory device by 3rd Embodiment of this invention. It is process sectional drawing (the 1) which shows the manufacturing method of the semiconductor memory device by 4th Embodiment of this invention. It is process sectional drawing (the 2) which shows the manufacturing method of the semiconductor memory device by 4th Embodiment of this invention. It is a circuit diagram which shows the structure of the conventional semiconductor memory device. It is a graph which shows the hysteresis characteristic of a ferroelectric film. It is a circuit diagram which shows the structure of the conventional semiconductor memory device which provided the dummy cell.

Explanation of symbols

BL, BL '... bit lines C1, C2 ... capacitor DC ... dummy cell G ... gate INV ... inverter MC ... memory cell PL ... plate line SA ... sense amplifier S / D ... source / drain Tr ... transfer transistors WL, WL' ... word Line 10 ... Silicon substrate 12 ... Element isolation film 14 ... Gate electrode 16 ... Source / drain diffusion layer 18 ... Interlayer insulating film 20 ... Electrode plug 22 ... Silicon nitride film 24 ... Conductive film 26 ... Interlayer insulating film 28 ... Opening 30 ... Storage electrode 32 ... conductive film 34 ... ferroelectric film 36 ... contact hole 38 ... plate electrode 40 ... plate line 42 ... interlayer insulating film 44 ... conductive film 46 ... opening 48 ... storage electrode 50 ... interlayer insulating film 52 ... contact hole 54 ... Plate wire 56 ... Plate wire

Claims (4)

A transfer transistor formed on a semiconductor substrate;
A columnar storage electrode connected to one source / drain diffusion layer of the transfer transistor;
A dielectric film covering the surface of the storage electrode;
Surrounding the side surface of the storage electrode through the dielectric film, and having a laminated film in which a plurality of insulating films and a plurality of plate electrodes are alternately laminated,
The dielectric film has a paraelectric film formed in a first region on the side wall of the storage electrode and a ferroelectric film formed in a second region on the side wall of the storage electrode;
A paraelectric capacitor is constituted by the storage electrode, the paraelectric film, and the plate electrode covering the first region of the storage electrode via the paraelectric film,
A ferroelectric capacitor is configured by the storage electrode, the ferroelectric film, and the plate electrode that covers the second region of the storage electrode via the ferroelectric film. Semiconductor memory device. The semiconductor memory device according to claim 1 Symbol placement,
A plurality of ferroelectric capacitors are constituted by the storage electrode, the dielectric film, and the plurality of plate electrodes. A semiconductor memory device, wherein: Forming a plate electrode formed of a first conductive film on the base substrate and having an opening reaching the base substrate;
Forming a paraelectric film on a side wall of the plate electrode in the opening;
Burying a second conductive film in the opening to form a first storage electrode made of the second conductive film;
Forming a laminated film in which a plurality of insulating films and a plurality of conductive films are alternately laminated on the first storage electrode and the plate electrode;
Forming a second opening reaching the first storage electrode in the laminated film and forming a plurality of plate electrodes made of the plurality of conductive films;
Forming a ferroelectric film on a sidewall of the laminated film in the second opening;
Filling a second conductive film in the second opening, and forming a second storage electrode made of the third conductive film and connected to the first storage electrode. Manufacturing method of semiconductor memory device. Forming a columnar first storage electrode made of a first conductive film on a base substrate;
Forming a paraelectric film on a sidewall of the first storage electrode;
Forming a first plate electrode on the side wall of the first storage electrode, covering the first storage electrode via the paraelectric film ;
Forming a laminated film in which a plurality of insulating films and a plurality of conductive films are alternately laminated on the first storage electrode and the plate electrode;
Forming a second opening reaching the first storage electrode in the laminated film and forming a plurality of plate electrodes made of the plurality of conductive films;
Forming a ferroelectric film on a sidewall of the laminated film in the second opening;
Filling a second conductive film in the second opening, and forming a second storage electrode made of the third conductive film and connected to the first storage electrode. Manufacturing method of semiconductor memory device.

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