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JP4410508B2 - Fluorine-containing compounds and their polymer compounds - Google Patents

Fluorine-containing compounds and their polymer compounds Download PDF

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JP4410508B2
JP4410508B2 JP2003279778A JP2003279778A JP4410508B2 JP 4410508 B2 JP4410508 B2 JP 4410508B2 JP 2003279778 A JP2003279778 A JP 2003279778A JP 2003279778 A JP2003279778 A JP 2003279778A JP 4410508 B2 JP4410508 B2 JP 4410508B2
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JP2004083900A (en
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真一 角田
治彦 小森谷
一彦 前田
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Central Glass Co Ltd
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Description

本発明は、水酸基またはそれを修飾した置換基含有の新規な含フッ素化合物と、それを用いて重合または共重合した高分子化合物、さらにその含フッ素化合物及び高分子化合物を用いたレジスト材料、または、当該高分子化合物を用いた反射防止膜材料に関する。   The present invention relates to a novel fluorine-containing compound containing a hydroxyl group or a substituent modified therewith, a polymer compound polymerized or copolymerized using the compound, and a resist material using the fluorine-containing compound and the polymer compound, or And an antireflection film material using the polymer compound.

フッ素系化合物は、フッ素原子の持つ撥水性、撥油性、低吸水性、耐熱性、耐候性、耐腐食性、透明性、感光性、低屈折率性、低誘電性などの特徴を持つことから最先端分野を中心に幅広い応用分野で利用されており、主に、各波長における透明性を生かしたコーティング分野で応用されている。可視光領域では反射防止膜として、高波長領域(光通信波長帯)では光デバイスとして、紫外線領域、特に真空紫外線領域で、レジスト材料として使用されており、現在も活発な研究開発が続けられている。しかし、ますます高度化、多様化する要求に対して既存の化合物が発揮しうる機能は必ずしも充分ではなく、透明性、基板密着性およびエッチング耐性の機能に優れ、それらすべての機能を兼ね備えた反射防止膜材料、レジスト材料、及びレジスト材料として適する溶解抑制剤の創出が望まれている。   Fluorine compounds have features such as water repellency, oil repellency, low water absorption, heat resistance, weather resistance, corrosion resistance, transparency, photosensitivity, low refractive index, and low dielectric properties of fluorine atoms. It is used in a wide range of application fields, mainly in the cutting-edge field, and is mainly applied in the coating field that takes advantage of transparency at each wavelength. It is used as an anti-reflection film in the visible light region, as an optical device in the high wavelength region (optical communication wavelength band), as a resist material in the ultraviolet region, particularly in the vacuum ultraviolet region, and is still actively researched and developed. Yes. However, the functions that existing compounds can perform in response to increasingly sophisticated and diversified demands are not always sufficient, and the functions of transparency, substrate adhesion and etching resistance are excellent, and the reflection has all these functions. Creation of a dissolution inhibitor suitable as an anti-film material, a resist material, and a resist material is desired.

従来、紫外線領域から近赤外線領域に至るまでの幅広い波長領域で、高い透明性と低屈折率性を有し、かつ基板への密着性、高い成膜性、エッチング耐性、耐久性を併せ持つ反射防止膜材料またはレジスト材料は得られていない。   Conventionally, in a wide wavelength range from the ultraviolet region to the near infrared region, it has high transparency and low refractive index, and also has anti-reflection that combines adhesion to the substrate, high film formability, etching resistance, and durability. No film material or resist material has been obtained.

本発明は、上記事情に鑑み成されたものであり、新規な含フッ素化合物とそれを用いた高分子化合物を用い、紫外線領域から近赤外線領域に至るまでの幅広い波長領域での高い透明性と低屈折率性を有し、かつ基板への密着性、高い成膜性、エッチング耐性、耐久性を併せ持つ反射防止膜材料またはレジスト材料、及びレジスト材料として適する溶解抑制剤を提供することを目的とする。   The present invention has been made in view of the above circumstances, and uses a novel fluorine-containing compound and a polymer compound using the same, and has high transparency in a wide wavelength region from the ultraviolet region to the near infrared region. An object of the present invention is to provide an antireflection film material or a resist material having a low refractive index and having adhesion to a substrate, high film-forming properties, etching resistance and durability, and a dissolution inhibitor suitable as a resist material. To do.

本発明者らは、上記目的を達成するため鋭意検討を重ねた結果、同一分子内に水酸基またはそれを修飾した官能基を有する脂環式もしくは芳香族含フッ素化合物及びそれを用いた高分子化合物を合成し、これらを用いたレジスト材料、当該高分子化合物を用いた反射防止膜材料が、紫外線領域から近赤外線領域に至るまでの幅広い波長領域での高い透明性と低屈折率性を有し、かつ基板への密着性、高い成膜性、エッチング耐性、耐久性を併せ持つことを知見し、さらに、当該含フッ素化合物及び高分子化合物が溶解抑制剤として適することを見出し、本発明を完成するに至った。   As a result of intensive studies to achieve the above object, the present inventors have found that an alicyclic or aromatic fluorine-containing compound having a hydroxyl group or a functional group modified with the same in the same molecule and a polymer compound using the same Resist materials using these, and anti-reflective coating materials using these polymer compounds have high transparency and low refractive index in a wide wavelength range from the ultraviolet region to the near infrared region. In addition, it has been found that it has both adhesion to the substrate, high film-forming properties, etching resistance, and durability, and further finds that the fluorine-containing compound and the polymer compound are suitable as a dissolution inhibitor, thereby completing the present invention. It came to.

すなはち、本発明は、下記に記載した、1〜9の含フッ素化合物、10の高分子化合物、11の反射防止膜材料、12、13のレジスト材料である。   In other words, the present invention includes the following fluorine-containing compounds 1 to 9, 10 polymer compounds, 11 antireflection film materials, and 12 and 13 resist materials described below.

1:
一般式(1)で表される含フッ素化合物(式中、R1はメチル基またはトリフルオロメチル基を表し、R、Rは水素原子、炭素数1〜25の直鎖状、分岐状もしくは環状の炭化水素基あるいは芳香族炭化水素基を含む基であって、その一部にフッ素原子、酸素原子、カルボニル結合を含んでもよい。lは0〜2の任意の整数を表し、m、nは1〜5の任意の整数を表し、m+n≦6を満たす。R〜Rが複数の場合、R〜Rはそれぞれ同一でも異なってもよい。)。
1:
Fluorine-containing compound represented by the general formula (1) (wherein R 1 represents a methyl group or a trifluoromethyl group, R 2 and R 3 represent a hydrogen atom, a linear or branched chain having 1 to 25 carbon atoms) Or it is a group containing a cyclic hydrocarbon group or an aromatic hydrocarbon group, and a part thereof may contain a fluorine atom, an oxygen atom, or a carbonyl bond, l represents any integer of 0 to 2, m, n represents an arbitrary integer of 1 to 5 and satisfies m + n ≦ 6, and when R 1 to R 3 are plural, R 1 to R 3 may be the same or different.

2:
一般式(2)で表される含フッ素化合物(式中、R1〜Rは一般式(1)と同じ。lは0〜2、m、nは1〜9、oは1〜8の任意の整数を表し、m+n≦o+2を満たす。R〜Rが複数の場合、R〜Rはそれぞれ同一でも異なってもよい。)。
2:
Fluorine-containing compound represented by the general formula (2) (wherein R 1 to R 3 are the same as those in the general formula (1). L is 0 to 2, m, n is 1 to 9, and o is 1 to 8. represents any integer, when m + n ≦ o + 2 satisfy .R 1 to R 3 are a plurality, R 1 to R 3 may be the same or different.).

3:
一般式(3)で表される含フッ素化合物(式中、R1、Rは一般式(1)と同じ。Rは水素原子、炭素数1〜25の直鎖状、分岐状もしくは環状の炭化水素基あるいは芳香族炭化水素基を含む基であって、その一部にフッ素原子、酸素原子、カルボニル結合を含んでもよい。l、m、n、oは一般式(2)と同じ。R、R、Rが複数の場合、R、R、Rはそれぞれ同一でも異なってもよい。)。
3:
Fluorine-containing compound represented by general formula (3) (wherein R 1 and R 2 are the same as in general formula (1). R 4 is a hydrogen atom, linear, branched or cyclic having 1 to 25 carbon atoms. A group containing a hydrocarbon group or an aromatic hydrocarbon group, and a part thereof may contain a fluorine atom, an oxygen atom, or a carbonyl bond, wherein l, m, n, and o are the same as those in the general formula (2). If R 1, R 2, R 4 is a plurality, R 1, R 2, R 4 may be the same or different.).

4:
一般式(4)で表される含フッ素化合物。
4:
A fluorine-containing compound represented by the general formula (4).

5:
一般式(5)で表される含フッ素化合物。
5:
A fluorine-containing compound represented by the general formula (5).

6:
2、R3のうち少なくともひとつが、ビニル基、アリル基、アクリロイル基、メタクリロイル基、またはそれら官能基に含まれる水素原子の一部もしくは全部がフッ素原子で置換された官能基またはそれらを含有する置換基である上記1または2記載の含フッ素化合物。
6:
At least one of R 2 and R 3 is a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, or a functional group in which some or all of the hydrogen atoms contained in these functional groups are substituted with fluorine atoms, or 3. The fluorine-containing compound according to 1 or 2 above, which is a substituent to be contained .

7:
、Rのうち少なくともひとつが、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、フルオロアクリロイル基、トリフルオロメチルアクリロイル基、ノニルフルオロブチルアクリロイル基から選ばれた置換基を含む上記1または2記載の含フッ素化合物。
7:
1 or 2 above, wherein at least one of R 2 and R 3 includes a substituent selected from a trifluorovinyl group, a difluorotrifluoromethylvinyl group, a fluoroacryloyl group, a trifluoromethylacryloyl group, and a nonylfluorobutylacryloyl group. The fluorine-containing compound as described.

8:
がビニル基、アリル基、エポキシ基、エチニル基、またはそれら官能基の一部もしくは全部がフッ素原子で置換されたものから選ばれた置換基を含む上記3記載の含フッ素化合物。
8:
4. The fluorine-containing compound according to 3 above, wherein R 4 contains a substituent selected from a vinyl group, an allyl group, an epoxy group, an ethynyl group, or a group in which part or all of these functional groups are substituted with a fluorine atom.

9:
、Rのうち少なくともひとつに酸不安定性基(酸不安定性基は酸脱離基であって、一部に酸素原子、カルボニル結合、フッ素原子を含んでもよい。)を含有した上記1〜3及び上記6〜8のいずれかに記載の含フッ素化合物。
9:
At least one of R 2 and R 3 contains an acid labile group (the acid labile group is an acid leaving group, and may partially contain an oxygen atom, a carbonyl bond, or a fluorine atom). ~ 3 and the fluorine-containing compound according to any one of 6 to 8 above.

10:
上記1〜3及び上記6〜9のいずれかに記載の含フッ素化合物を用いて重合または共重合された高分子化合物。
10:
The high molecular compound superposed | polymerized or copolymerized using the fluorine-containing compound in any one of said 1-3 and said 6-9.

11:
上記10記載の高分子化合物を用いた紫外光または可視光の反射防止膜材料。
11:
15. An antireflection film material for ultraviolet light or visible light using the polymer compound described in 10 above.

12:
上記9記載の含フッ素化合物または上記10記載の高分子化合物を含有したレジスト材料。
12:
A resist material containing the fluorine-containing compound according to 9 or the polymer compound according to 10 above.

13:
上記9記載の含フッ素化合物または上記10記載の高分子化合物を溶解抑制剤として用いたレジスト材料。
13:
A resist material using the fluorine-containing compound according to 9 or the polymer compound according to 10 as a dissolution inhibitor.

以下、本発明について詳しく説明する。本発明の一般式(1)〜(3)で示される化合物において、R1はメチル基あるいはトリフルオロメチル基であるが、より低屈折率や高透明性、特に紫外線波長領域の透明性が必要な応用に供される場合、トリフルオロメチル基が好ましく使用される。 The present invention will be described in detail below. In the compounds represented by the general formulas (1) to (3) of the present invention, R 1 is a methyl group or a trifluoromethyl group, but it requires lower refractive index and higher transparency, particularly transparency in the ultraviolet wavelength region. When used for various applications, a trifluoromethyl group is preferably used.

本発明によるR〜Rは、水素原子、炭素数1〜25の直鎖状、分岐状もしくは環状の炭化水素基あるいは芳香族炭化水素基であって、フッ素原子、酸素原子、カルボニル結合を含んでもよい。R〜Rの構造は特に制限されないが、使用目的によりその構造を変更できる。かかる目的としては、有機溶媒やアルカリ水溶液への溶解性、高いガラス転移点、ハンダ耐熱性を目的とした架橋反応性、光酸発生剤によるポジ型感光性やエッチング耐性などの特徴を付与させることであり、本発明の応用分野ごとに使い分けることが可能である。 R 2 to R 4 according to the present invention are a hydrogen atom, a linear, branched or cyclic hydrocarbon group or an aromatic hydrocarbon group having 1 to 25 carbon atoms, and each has a fluorine atom, an oxygen atom, or a carbonyl bond. May be included. The structure of R 2 to R 4 is not particularly limited, but the structure can be changed depending on the purpose of use. The purpose is to provide such characteristics as solubility in organic solvents and aqueous alkali solutions, high glass transition point, cross-linking reactivity for solder heat resistance, positive photosensitivity by photoacid generator and etching resistance. Therefore, it can be used for each application field of the present invention.

本発明のR〜Rに使用できる炭素数1〜25の直鎖状、分岐状もしくは環状の炭化水素基あるいは芳香族炭化水素基としては、メチル基、エチル基、プロピル基、イソプロピル基、シクロプロピル基、n−プロピル基、sec−ブチル基、tert-ブチル基、n−ペンチル基、シクロペンチル基、sec−ペンチル基,ネオペンチル基、ヘキシル基、シクロへキシル基、エチルヘキシル基、ノルボルネル基、アダマンチル基、ビニル基、アリル基、ブテニル基、ペンテニル基、エチニル基、フェニル基、ベンジル基、4−メトキシベンジル基などが例示でき、上記官能基の一部または全部がフッ素原子で置換されたものでもよい。また、酸素原子を含むものとしてアルコキシカルボニル基、アセタール基、アシル基等を挙げることができ、アルコキシカルボニル基としてはtert−ブトキシカルボニル基、tert−アミルオキシカルボニル基、メトキシカルボニル基、エトキシカルボニル基、i−プロポキシカルボニル基等を例示できる。アセタール基としては、メトキシメチル基、メトキシエトキシメチル基、エトキシエチル基、ブトキシエチル基、シクロヘキシルオキシエチル基、ベンジルオキシエチル基、フェネチルオキシエチル基、エトキシプロピル基、ベンジルオキシプロピル基、フェネチルオキシプロピル基、エトキシブチル基、エトキシイソブチル基の鎖状のエーテルやテトラヒドロフラニル基、テトラヒドロピラニル基等の環状エーテルが挙げられる。アシル基としては、アセチル基、プロピオニル基、ブチリル基、ヘプタノイル基、ヘキサノイル基、バレリル基、ピバロイル基、イソバレリル基、ラウリロイル基、ミリストイル基、パルミトイル基、ステアロイル基、オキサリル基、マロニル基、スクシニル基、グルタリル基、アジポイル基、ピペロイル基、スベロイル基、アゼラオイル基、セバコイル基、アクリロイル基、プロピオロイル基、メタクリロイル基、クロトノイル基、オレオイル基、マレオイル基、フマロイル基、メサコノイル基、カンホロイル基、ベンゾイル基、フタロイル基、イソフタロイル基、テレフタロイル基、ナフトイル基、トルオイル基、ヒドロアトロポイル基、アトロポイル基、シンナモイル基、フロイル基、テノイル基、ニコチノイル基、イソニコチノイル基等を挙げることができる。更に、上記置換基の水素原子の一部または全部がフッ素原子で置換されたものを使用することもできる。 Examples of the linear, branched or cyclic hydrocarbon group or aromatic hydrocarbon group having 1 to 25 carbon atoms that can be used for R 2 to R 4 of the present invention include a methyl group, an ethyl group, a propyl group, an isopropyl group, Cyclopropyl group, n-propyl group, sec-butyl group, tert-butyl group, n-pentyl group, cyclopentyl group, sec-pentyl group, neopentyl group, hexyl group, cyclohexyl group, ethylhexyl group, norbornyl group, adamantyl group Groups, vinyl groups, allyl groups, butenyl groups, pentenyl groups, ethynyl groups, phenyl groups, benzyl groups, 4-methoxybenzyl groups, etc., even if some or all of the above functional groups are substituted with fluorine atoms Good. Examples of those containing an oxygen atom include an alkoxycarbonyl group, an acetal group, and an acyl group. Examples of the alkoxycarbonyl group include a tert-butoxycarbonyl group, a tert-amyloxycarbonyl group, a methoxycarbonyl group, an ethoxycarbonyl group, An i-propoxycarbonyl group etc. can be illustrated. As acetal group, methoxymethyl group, methoxyethoxymethyl group, ethoxyethyl group, butoxyethyl group, cyclohexyloxyethyl group, benzyloxyethyl group, phenethyloxyethyl group, ethoxypropyl group, benzyloxypropyl group, phenethyloxypropyl group And cyclic ethers such as chain ether of ethoxybutyl group and ethoxyisobutyl group, tetrahydrofuranyl group and tetrahydropyranyl group. As the acyl group, acetyl group, propionyl group, butyryl group, heptanoyl group, hexanoyl group, valeryl group, pivaloyl group, isovaleryl group, lauryl group, myristoyl group, palmitoyl group, stearoyl group, oxalyl group, malonyl group, succinyl group, Glutaryl group, adipoyl group, piperoyl group, suberoyl group, azelaoil group, sebacoyl group, acryloyl group, propioroyl group, methacryloyl group, crotonoyl group, oleoyl group, maleoyl group, fumaroyl group, mesaconoyl group, canholoyl group, benzoyl group, phthaloyl group Group, isophthaloyl group, terephthaloyl group, naphthoyl group, toluoyl group, hydroatropoyl group, atropoyl group, cinnamoyl group, furoyl group, thenoyl group, nicotinoyl group, isonicotinoyl group And the like can be given. Furthermore, what substituted a part or all of the hydrogen atom of the said substituent by the fluorine atom can also be used.

また、本発明によると、一般式(4)、(5)で表される化合物は、本発明の含フッ素化合物または単量体のベース材料として好適に採用される。本発明によれば、一般式(4)、(5)の化合物は、一般式(1)、(2)で表される様々な含フッ素単量体を誘導するための最も基本的な含フッ素化合物として有益である。   In addition, according to the present invention, the compounds represented by the general formulas (4) and (5) are suitably employed as the base material for the fluorine-containing compound or monomer of the present invention. According to the present invention, the compounds of the general formulas (4) and (5) are the most basic fluorine-containing compounds for deriving various fluorine-containing monomers represented by the general formulas (1) and (2). Useful as a compound.

次に、本発明によるR、Rについて説明する。本発明によると、R、Rには、水素原子、不飽和結合、酸不安定基のいずれかを含有することによって構成される。複数のR、Rが存在する含フッ素化合物の場合、それぞれのR、Rは同一でも異なってもよい。R、Rが水素原子の場合、様々な含フッ素化合物を誘導するための原料化合物や、そのまま他の樹脂や架橋剤とともにコーティング材料中に添加する形で使用できる。またR、Rが不飽和結合の場合、含フッ素重合体または共重合体を製造するための重合性単量体として使用でき、Diels−Alder反応を始めとした種々の原料化合物としても好適である。R、Rが酸不安定基の場合、その用途がレジストである場合は溶解抑制剤(Dissolution Inhibitor)として使用できる。さらに分子中に水素原子、不飽和結合、酸不安定基などを共存した含フッ素化合物も使用できる。R、Rのうち、まず、本発明による不飽和結合含有の上記6〜8記載の含フッ素化合物について説明する。R、Rのうちの一つが重合性不飽和結合の場合は、主として本発明による重合体、共重合体を得るための原料として使用され、R、Rのうちの複数が不飽和結合の場合は、主として架橋性材料として使用することができる。 Next, R 2 and R 3 according to the present invention will be described. According to the present invention, R 2 and R 3 are constituted by containing any of a hydrogen atom, an unsaturated bond, and an acid labile group. In the case of a fluorine-containing compound in which a plurality of R 2 and R 3 are present, each R 2 and R 3 may be the same or different. When R 2 and R 3 are hydrogen atoms, they can be used in the form of raw material compounds for inducing various fluorine-containing compounds, or as they are added to coating materials together with other resins and crosslinking agents. In addition, when R 2 and R 3 are unsaturated bonds, they can be used as polymerizable monomers for producing fluoropolymers or copolymers, and are also suitable as various raw material compounds including Diels-Alder reaction. It is. When R 2 and R 3 are acid labile groups, when the application is a resist, they can be used as a dissolution inhibitor. Furthermore, a fluorine-containing compound in which a hydrogen atom, an unsaturated bond, an acid labile group and the like coexist in the molecule can also be used. Of R 2 and R 3, the fluorine-containing compound according to the above 6 to 8 containing an unsaturated bond according to the present invention will be described first. When one of R 2 and R 3 is a polymerizable unsaturated bond, it is mainly used as a raw material for obtaining the polymer or copolymer according to the present invention, and a plurality of R 2 and R 3 are unsaturated. In the case of bonding, it can be used mainly as a crosslinkable material.

本発明のR2、R3に使用できる不飽和結合としては、重合性または反応性があればその構造には特に限定されないが、ビニル基、アリル基、アクリロイル基、メタクリロイル基か、それら官能基に含まれる水素原子の一部あるいは全部がフッ素原子で置換された置換基またはそれらを含有する置換基が好適に採用される。ここでR2、R3の一部あるいは全部がフッ素原子で置換された官能基を具体的に例示するならば、フルオロビニル基、ジフルオロビニル基、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、トリフルオロアリル基、パーフルオロアリル基、フルオロアクリロイル基、トリフルオロメチルアクリロイル基、ノニルフルオロブチルアクリロイル基等が挙げられる。前記官能基にフッ素原子を持つものは透明性や低屈折率性をさらに付与させるために適用される。 The unsaturated bond that can be used for R 2 and R 3 of the present invention is not particularly limited as long as it has polymerizability or reactivity, but may be a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, or a functional group thereof . A substituent in which part or all of the hydrogen atoms contained in the group are substituted with fluorine atoms or a substituent containing them is suitably employed. Here, specific examples of the functional group in which a part or all of R 2 and R 3 are substituted with a fluorine atom include a fluorovinyl group, a difluorovinyl group, a trifluorovinyl group, a difluorotrifluoromethylvinyl group, A trifluoroallyl group, a perfluoroallyl group, a fluoroacryloyl group, a trifluoromethylacryloyl group, a nonylfluorobutylacryloyl group, etc. are mentioned. Those having a fluorine atom in the functional group are applied to further impart transparency and low refractive index.

次に、本発明のRについて説明する。本発明に使用できるRとしては、ビニル基、アリル基、エポキシ基、エチニル基などの重合性官能基が好ましいが、特にそれらに限定されるわけではない。また、それら官能基の一部あるいは全部がフッ素原子で置換されたものも好ましく採用される。ここでRの一部あるいは全部がフッ素原子で置換された官能基を具体的に例示するならば、フルオロビニル基、ジフルオロビニル基、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、トリフルオロアリル基、パーフルオロアリル基、トリフルオロエポキ基等が挙げられる。 Next, R 4 of the present invention will be described. R 4 that can be used in the present invention is preferably a polymerizable functional group such as a vinyl group, an allyl group, an epoxy group, or an ethynyl group, but is not particularly limited thereto. Further, those in which part or all of these functional groups are substituted with fluorine atoms are also preferably employed. Here, specific examples of the functional group in which part or all of R 4 is substituted with a fluorine atom include a fluorovinyl group, a difluorovinyl group, a trifluorovinyl group, a difluorotrifluoromethylvinyl group, a trifluoroallyl group. Group, perfluoroallyl group, trifluoroepoxy group and the like.

上記官能基を使用する目的としては、含フッ素化合物の重合性を向上させるためである。その官能基にフッ素原子を持つものは透明性や低屈折率性をさらに付与させるためで、本発明の応用分野ごとに使い分けることが可能である。   The purpose of using the functional group is to improve the polymerizability of the fluorine-containing compound. Those having a fluorine atom in the functional group further impart transparency and low refractive index, and can be selectively used for each application field of the present invention.

次に、本発明のR、Rに使用できる酸不安定性基について説明する。本発明による酸不安定性基は、R、Rのうちの一部または全部に適用され、さらに前述の不飽和結合基と併用して使用することもできる。R、Rの酸不安定基とは、いわゆる酸脱離基であって、その一部に酸素原子、カルボニル結合、フッ素原子を含んでもよい。 Next, the acid labile group that can be used for R 2 and R 3 of the present invention will be described. The acid labile group according to the present invention is applied to a part or all of R 2 and R 3 , and can also be used in combination with the aforementioned unsaturated bond group. The acid labile groups of R 2 and R 3 are so-called acid leaving groups, and some of them may contain an oxygen atom, a carbonyl bond, or a fluorine atom.

本発明に使用できる酸不安定性基としては、光酸発生剤や加水分解などの効果で脱離が起きる基であれば特に制限なく使用できるが、具体的な例示を挙げるとするならば、アルキコキシカルボニル基、アセタール基、シリル基、アシル基等を挙げることができる。アルコキシカルボニル基としてはtert−ブトキシカルボニル基、tert−アミルオキシカルボニル基、メトキシカルボニル基、エトキシカルボニル基、i−プロポキシカルボニル基等を例示できる。アセタール基としては、メトキシメチル基、エトキシエチル基、ブトキシエチル基、シクロヘキシルオキシエチル基、ベンジルオキシエチル基、フェネチルオキシエチル基、エトキシプロピル基、ベンジルオキシプロピル基、フェネチルオキシプロピル基、エトキシブチル基、エトキシイソブチル基などが挙げられる。またR、R
が水素原子である場合、その水酸基に対してビニルエーテルを付加させたアセタール基を使用することもできる。シリル基としては、例えば、トリメチルシリル基、エチルジメチルシリル基、メチルジエチルシリル基、トリエチルシリル基、i−プロピルジメチルシリル基、メチルジ−i−プロピルシリル基、トリ−i−プロピルシリル基、t−ブチルジメチルシリル基、メチルジ−t−ブチルシリル基、トリ−t−ブチルシリル基、フェニルジメチルシリル基、メチルジフェニルシリル基、トリフェニルシリル基等を挙げることができる。アシル基としては、アセチル基、プロピオニル基、ブチリル基、ヘプタノイル基、ヘキサノイル基、バレリル基、ピバロイル基、イソバレリル基、ラウリロイル基、ミリストイル基、パルミトイル基、ステアロイル基、オキサリル基、マロニル基、スクシニル基、グルタリル基、アジポイル基、ピペロイル基、スベロイル基、アゼラオイル基、セバコイル基、アクリロイル基、プロピオロイル基、メタクリロイル基、クロトノイル基、オレオイル基、マレオイル基、フマロイル基、メサコノイル基、カンホロイル基、ベンゾイル基、フタロイル基、イソフタロイル基、テレフタロイル基、ナフトイル基、トルオイル基、ヒドロアトロポイル基、アトロポイル基、シンナモイル基、フロイル基、テノイル基、ニコチノイル基、イソニコチノイル基等を挙げることができる。更に、これらの酸不安定基の水素原子の一部または全部がフッ素原子で置換されたものを使用することもできる。
The acid labile group that can be used in the present invention can be used without particular limitation as long as it is a group that undergoes elimination due to effects such as a photoacid generator or hydrolysis. Examples thereof include a alkoxycarbonyl group, an acetal group, a silyl group, and an acyl group. Examples of the alkoxycarbonyl group include a tert-butoxycarbonyl group, a tert-amyloxycarbonyl group, a methoxycarbonyl group, an ethoxycarbonyl group, and an i-propoxycarbonyl group. As an acetal group, methoxymethyl group, ethoxyethyl group, butoxyethyl group, cyclohexyloxyethyl group, benzyloxyethyl group, phenethyloxyethyl group, ethoxypropyl group, benzyloxypropyl group, phenethyloxypropyl group, ethoxybutyl group, An ethoxyisobutyl group etc. are mentioned. R 2 and R
When 3 is a hydrogen atom, an acetal group obtained by adding vinyl ether to the hydroxyl group can also be used. Examples of the silyl group include trimethylsilyl group, ethyldimethylsilyl group, methyldiethylsilyl group, triethylsilyl group, i-propyldimethylsilyl group, methyldi-i-propylsilyl group, tri-i-propylsilyl group, and t-butyl. Examples thereof include a dimethylsilyl group, a methyldi-t-butylsilyl group, a tri-t-butylsilyl group, a phenyldimethylsilyl group, a methyldiphenylsilyl group, and a triphenylsilyl group. As the acyl group, acetyl group, propionyl group, butyryl group, heptanoyl group, hexanoyl group, valeryl group, pivaloyl group, isovaleryl group, lauryl group, myristoyl group, palmitoyl group, stearoyl group, oxalyl group, malonyl group, succinyl group, Glutaryl group, adipoyl group, piperoyl group, suberoyl group, azelaoil group, sebacoyl group, acryloyl group, propioroyl group, methacryloyl group, crotonoyl group, oleoyl group, maleoyl group, fumaroyl group, mesaconoyl group, canholoyl group, benzoyl group, phthaloyl group Group, isophthaloyl group, terephthaloyl group, naphthoyl group, toluoyl group, hydroatropoyl group, atropoyl group, cinnamoyl group, furoyl group, thenoyl group, nicotinoyl group, isonicotinoyl group And the like can be given. Furthermore, those in which some or all of the hydrogen atoms of these acid labile groups are substituted with fluorine atoms can also be used.

酸不安定性基を使用する目的としては、その酸不安性基によるポジ型感光性および波長300nm以下の遠紫外線、エキシマレーザー、X線等の高エネルギー線もしくは電子線の露光後のアルカリ水溶液への溶解性を発現させることであり、その官能基にフッ素原子を持つものは透明性を、環状構造を含むものはエッチング耐性や高ガラス転移点などの特徴をさらに付与させるためで、本発明の応用分野ごとに使い分けることが可能である。   The purpose of using the acid labile group is that the positive photosensitivity due to the acid-anxiety group and the exposure to an alkaline aqueous solution after exposure to high-energy rays such as far ultraviolet rays, excimer lasers, X-rays, or electron beams with a wavelength of 300 nm or less. It is to develop solubility, and those having a fluorine atom in the functional group are transparent, and those containing a cyclic structure are to further impart characteristics such as etching resistance and high glass transition point. It is possible to use properly for each field.

次に、本発明による高分子化合物について説明する。本発明の高分子化合物とは一般式(1)〜(3)のうち分子内に重合性不飽和結合を含有した含フッ素化合物を単独重合体または共重合せしめた高分子材料のことである。   Next, the polymer compound according to the present invention will be described. The polymer compound of the present invention is a polymer material obtained by homopolymerizing or copolymerizing a fluorine-containing compound having a polymerizable unsaturated bond in the molecule among the general formulas (1) to (3).

本発明の重合性含フッ素化合物と共重合可能な単量体を具体的に例示するならば、少なくとも、アクリル酸エステル、メタクリル酸エステル、含フッ素アクリル酸エステル、含フッ素メタクリル酸エステル、スチレン系化合物、含フッ素スチレン系化合物、ビニルエーテル、含フッ素ビニルエーテル、アリルエーテル、含フッ素アリルエーテル、オレフィン、含フッ素オレフィン、ノルボルネン化合物、含フッ素ノルボルネン化合物から選ばれた一種類以上の単量体との共重合が好適である。   If the monomer copolymerizable with the polymerizable fluorine-containing compound of the present invention is specifically exemplified, at least acrylic ester, methacrylic ester, fluorine-containing acrylic ester, fluorine-containing methacrylate, styrene compound Copolymerization with one or more monomers selected from fluorine-containing styrene compounds, vinyl ethers, fluorine-containing vinyl ethers, allyl ethers, fluorine-containing allyl ethers, olefins, fluorine-containing olefins, norbornene compounds, and fluorine-containing norbornene compounds. Is preferred.

本発明で使用できるアクリル酸エステルまたはメタクリル酸エステルとしてはエステル側鎖について特に制限なく使用できるが、公知の化合物を例示するならば、メチルアクリレート又はメタクリレート、エチルアクリレート又はメタクリレート、n−プロピルアクリレート又はメタクリレート、イソプロピルアクリレート又はメタクリレート、n−ブチルアクリレート又はメタクリレート、イソブチルアクリレート又はメタクリレート、n−ヘキシルアクリレート又はメタクリレート、n−オクチルアクリレート又はメタクリレート、2−エチルヘキシルアクリレート又はメタクリレート、ラウリルアクリレート又はメタクリレート、2−ヒドロキシエチルアクリレート又はメタクリレート、2−ヒドロキシプロピルアクリレート又はメタクリレートなどのアクリル酸又はメタクリル酸のアルキル
エステル、エチレングリコール、プロピレングリコール、テトラメチレングリコール基を含有したアクリレート又はメタクリレート、さらにアクリルアミド、メタクリルアミド、N−メチロールアクリルアミド、N−メチロールメタクリルアミド、ジアセトンアクリルアミドなどの不飽和アミド、アクリロニトリル、メタクリロニトリル、アルコキシシラン含有のビニルシランやアクリル酸またはメタクリル酸エステル、tert−ブチルアクリレート又はメタクリレート、3−オキソシクロヘキシルアクリレート又はメタクリレート、アダマンチルアクリレート又はメタクリレート、アルキルアダマンチルアクリレート又はメタクリレート、シクロヘキシルアクリレート又はメタクリレート、トリシクロデカニルアクリレート又はメタクリレート、ラクトン環やノルボルネン環などの環構造を有したアクリレートまたはメタクリレート、アクリル酸、メタクリル酸などが使用できる。さらにα位にシアノ基を含有した上記アクリレート類化合物や、類似化合物としてマレイン酸、フマル酸、無水マレイン酸などを共重合することも可能である。
The acrylic ester or methacrylic ester that can be used in the present invention can be used without particular limitation on the ester side chain, but examples of known compounds include methyl acrylate or methacrylate, ethyl acrylate or methacrylate, n-propyl acrylate or methacrylate. , Isopropyl acrylate or methacrylate, n-butyl acrylate or methacrylate, isobutyl acrylate or methacrylate, n-hexyl acrylate or methacrylate, n-octyl acrylate or methacrylate, 2-ethylhexyl acrylate or methacrylate, lauryl acrylate or methacrylate, 2-hydroxyethyl acrylate or Methacrylate, 2-hydroxypropyl acrylate or meta Acrylic acid or methacrylic acid alkyl ester such as relate, ethylene glycol, propylene glycol, acrylate or methacrylate containing tetramethylene glycol group, acrylamide, methacrylamide, N-methylol acrylamide, N-methylol methacrylamide, diacetone acrylamide, etc. Unsaturated amides, acrylonitrile, methacrylonitrile, alkoxysilane-containing vinyl silanes or acrylic acid or methacrylic acid esters, tert-butyl acrylate or methacrylate, 3-oxocyclohexyl acrylate or methacrylate, adamantyl acrylate or methacrylate, alkyladamantyl acrylate or methacrylate, Cyclohexyl acrylate or methacrylate Rate, tricyclodecanyl acrylate or methacrylate, acrylate or methacrylate having a ring structure such as lactone ring or norbornene ring, acrylic acid, methacrylic acid, and the like. Furthermore, it is also possible to copolymerize the above acrylate compounds containing a cyano group at the α-position, and maleic acid, fumaric acid, maleic anhydride and the like as similar compounds.

また、本発明で使用できる含フッ素アクリル酸エステル、含フッ素メタクリル酸エステルとしては、フッ素原子またはフッ素原子を有する基がアクリルのα位に含有した単量体、またはエステル部位にフッ素原子を含有した置換基からなるアクリル酸エステルまたはメタクリル酸エステルであって、α位とエステル部ともにフッ素を含有した含フッ素化合物も好適である。さらにα位にシアノ基が導入されていてもよい。例えば、α位に含フッ素アルキル基が導入された単量体としては、上述した非フッ素系のアクリル酸エステルまたはメタクリル酸エステルのα位にトリフルオロメチル基、トリフルオロエチル基、ノナフルオロ−n−ブチル基などが付与された単量体が好適に採用され、その場合のエステル部位には必ずしもフッ素を含有する必要はない。α−トリフルオロメチルアクリル酸アルキルエステルを共重合成分として使用した場合には、重合体の収率が比較的高く、また得られるポリマーの有機溶媒に対する溶解性が良好で好ましく採用される。   In addition, as the fluorine-containing acrylic ester and fluorine-containing methacrylate used in the present invention, a fluorine atom or a monomer having a fluorine atom contained in the α-position of the acrylic, or a fluorine atom contained in the ester site A fluorine-containing compound which is an acrylic ester or methacrylic ester composed of a substituent and contains fluorine at both the α-position and the ester portion is also suitable. Furthermore, a cyano group may be introduced at the α-position. For example, as a monomer having a fluorine-containing alkyl group introduced at the α-position, a trifluoromethyl group, trifluoroethyl group, nonafluoro-n- A monomer having a butyl group or the like is preferably employed, and the ester moiety in that case does not necessarily contain fluorine. When α-trifluoromethylacrylic acid alkyl ester is used as a copolymerization component, the yield of the polymer is relatively high, and the solubility of the resulting polymer in an organic solvent is good, which is preferably employed.

一方、そのエステル部位にフッ素を含有する単量体としては、エステル部位としてパーフルオロアルキル基、フルオロアルキル基であるフッ素アルキル基や、またエステル部位に環状構造とフッ素原子を共存する単位であって、その環状構造が例えばフッ素原子、トリフルオロメチル基、ヘキサフルオロカルビノール基などで置換された含フッ素ベンゼン環、含フッ素シクロペンタン環、含フッ素シクロヘキサン環、含フッ素シクロヘプタン環等を有する単位などを有するアクリル酸エステルまたはメタクリル酸エステルである。またエステル部位が含フッ素のt−ブチルエステル基であるアクリル酸またはメタクリル酸のエステルなども使用可能である。これらの含フッ素の官能基は、α位の含フッ素アルキル基と併用した単量体を用いることも可能である。そのような単位のうち特に代表的なも
のを単量体の形で例示するならば、2,2,2−トリフルオロエチルアクリレート、2,2,3,3−テトラフルオロプロピルアクリレート、1,1,1,3,3,3−ヘキサフルオロイソプロピルアクリレート、ヘプタフルオロイソプロピルアクリレート、1,1−ジヒドロヘプタフルオロ−n−ブチルアクリレート、1,1,5−トリヒドロオクタフルオロ−n−ペンチルアクリレート、1,1,2,2−テトラヒドロトリデカフルオロ−n−オクチルアクリレート、1,1,2,2−テトラヒドロヘプタデカフルオロ−n−デシルアクリレート、2,2,2−トリフルオロエチルメタクリレート、2,2,3,3−テトラフルオロプロピルメタクリレート、1,1,1,3,3,3−ヘキサフルオロイソプロピルメタクリレート、ヘプタフルオロイソプロピルメタクリレート、1,1−ジヒドロ
ヘプタフルオロ−n−ブチルメタクリレート、1,1,5−トリヒドロオクタフルオロ−n−ペンチルメタクリレート、1,1,2,2−テトラヒドロトリデカフルオロ−n−オクチルメタクリレート、1,1,2,2−テトラヒドロヘプタデカフルオロ−n−デシルメタクリレート、パーフルオロシクロヘキシルメチルアクリレート、パーフルオロシクロヘキシルメチルメタクリレート、6−[3、3、3−トリフルオロ−2−ヒドロキシ−2−(トリフルオロメチル)プロピル]ビシクロ[2.2.1]ヘプチル−2−イルアクリレート、6−[3、3、3−トリフルオロ−2−ヒドロキシ−2−(トリフルオロメチル)プロピル]ビシクロ[2.2.1]ヘプチル−2−イル 2−(トリフルオロメチル)アクリレート、6−[3、3、3−トリフルオロ−2−ヒドロキシ−2−(トリフルオロメチル)プロピル]ビシクロ[2.2.1]ヘプチル−2−イルメタクリレート、1、4−ビス(1、1、1、3、3、3−ヘキサフルオロ−2−ヒドロキシイソプロピル)シクロヘキシルアクリレート、1、4−ビス(1、1、1、3、3、3−ヘキサフルオロ−2−ヒドロキシイソプロピル)シクロヘキシルメタクリレート、1、4−ビス(1、1、1、3、3、3−ヘキサフルオロ−2−ヒドロキシイソプロピル)シクロヘキシル 2−トリフルオロメチルアクリレート、などが挙げられる。
On the other hand, the monomer containing fluorine at the ester site includes a perfluoroalkyl group as the ester site, a fluoroalkyl group as a fluoroalkyl group, and a unit having a cyclic structure and a fluorine atom at the ester site. , Units having a fluorinated benzene ring, a fluorinated cyclopentane ring, a fluorinated cyclohexane ring, a fluorinated cycloheptane ring, etc., whose cyclic structure is substituted with, for example, a fluorine atom, a trifluoromethyl group, a hexafluorocarbinol group, etc. Acrylic acid ester or methacrylic acid ester having An ester of acrylic acid or methacrylic acid in which the ester moiety is a fluorine-containing t-butyl ester group can also be used. As these fluorine-containing functional groups, a monomer used in combination with the α-position fluorine-containing alkyl group can be used. Among such units, particularly representative ones are exemplified in the form of monomers, 2,2,2-trifluoroethyl acrylate, 2,2,3,3-tetrafluoropropyl acrylate, 1,1 , 1,3,3,3-hexafluoroisopropyl acrylate, heptafluoroisopropyl acrylate, 1,1-dihydroheptafluoro-n-butyl acrylate, 1,1,5-trihydrooctafluoro-n-pentyl acrylate, 1, 1,2,2-tetrahydrotridecafluoro-n-octyl acrylate, 1,1,2,2-tetrahydroheptadecafluoro-n-decyl acrylate, 2,2,2-trifluoroethyl methacrylate, 2,2,3 , 3-Tetrafluoropropyl methacrylate, 1,1,1,3,3,3-hexafluo Isopropyl methacrylate, heptafluoroisopropyl methacrylate, 1,1-dihydroheptafluoro-n-butyl methacrylate, 1,1,5-trihydrooctafluoro-n-pentyl methacrylate, 1,1,2,2-tetrahydrotridecafluoro- n-octyl methacrylate, 1,1,2,2-tetrahydroheptadecafluoro-n-decyl methacrylate, perfluorocyclohexylmethyl acrylate, perfluorocyclohexylmethyl methacrylate, 6- [3,3,3-trifluoro-2-hydroxy -2- (trifluoromethyl) propyl] bicyclo [2.2.1] heptyl-2-yl acrylate, 6- [3,3,3-trifluoro-2-hydroxy-2- (trifluoromethyl) propyl] Bisik [2.2.1] Heptyl-2-yl 2- (trifluoromethyl) acrylate, 6- [3,3,3-trifluoro-2-hydroxy-2- (trifluoromethyl) propyl] bicyclo [2. 2.1] Heptyl-2-yl methacrylate, 1,4-bis (1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl) cyclohexyl acrylate, 1,4-bis (1,1,1, 1,3,3,3-hexafluoro-2-hydroxyisopropyl) cyclohexyl methacrylate, 1,4-bis (1,1,1,3,3,3-hexafluoro-2-hydroxyisopropyl) cyclohexyl 2-trifluoro And methyl acrylate.

さらに、本発明に使用できるスチレン系化合物、含フッ素スチレン系化合物としてはスチレン、フッ素化スチレン、ヒドロキシスチレンなどの他、ヘキサフルオロカルビノール基やその水酸基を修飾した官能基が一つ又は複数個結合した化合物が使用できる。すなわち、フッ素原子またはトリフルオロメチル基で水素を置換したスチレンまたはヒドロキシスチレン、α位にハロゲン、アルキル基、含フッ素アルキル基が結合した上記スチレン、パーフルオロビニル基含有のスチレンなどが好ましく使用可能である。   Furthermore, styrene compounds and fluorine-containing styrene compounds that can be used in the present invention include styrene, fluorinated styrene, hydroxystyrene, etc., and one or more functional groups modified with a hexafluorocarbinol group or its hydroxyl group. Can be used. That is, styrene or hydroxystyrene substituted with hydrogen by a fluorine atom or a trifluoromethyl group, the above styrene having a halogen, an alkyl group or a fluorine-containing alkyl group bonded to the α-position, or a styrene containing a perfluorovinyl group can be preferably used. is there.

また、ビニルエーテル、含フッ素ビニルエーテル、アリルエーテル、含フッ素アリルエーテルとしては、メチル基、エチル基、プロピル基、ブチル基、ヒドロキシエチル基、ヒドロキシブチル基などのヒドロキシ基を含有してもよいアルキルビニルエーテルあるいはアルキルアリルエーテル、シクロヘキシル基やその環状構造内に水素やカルボニル結合を有した環状型ビニル、アリルエーテルや、上記官能基の水素の一部または全部がフッ素原子で置換された含フッ素ビニルエーテル、含フッ素アリルエーテルも使用できる。なお、ビニルエステル、ビニルシラン、オレフィン、含フッ素オレフィン、ノルボルネン化合物、含フッ素ノルボルネン化合物やその他の重合性不飽和結合を含有した化合物であれば特に制限なく使用することが可能である。   Further, as vinyl ether, fluorine-containing vinyl ether, allyl ether, fluorine-containing allyl ether, alkyl vinyl ether which may contain hydroxy group such as methyl group, ethyl group, propyl group, butyl group, hydroxyethyl group, hydroxybutyl group or the like Alkyl allyl ether, cyclohexyl group, cyclic vinyl having hydrogen or carbonyl bond in its cyclic structure, allyl ether, fluorine-containing vinyl ether in which part or all of hydrogen of the above functional group is substituted with fluorine atom, fluorine-containing Allyl ether can also be used. In addition, if it is a compound containing vinyl ester, vinyl silane, an olefin, a fluorine-containing olefin, a norbornene compound, a fluorine-containing norbornene compound, and another polymerizable unsaturated bond, it can be used without a restriction | limiting in particular.

オレフィンとしてはエチレン、プロピレン、イソブテン、シクロペンテン、シクロヘキセンなどを、含フッ素オレフィンとしてはフッ化ビニル、フッ化ビニリデン、トリフルオロエチレン、クロロトリフルオロエチレン、テトラフルオロエチレン、ヘキサフルオロプロピレン、ヘキサフルオロイソブテンなどが例示できる。   Examples of olefins include ethylene, propylene, isobutene, cyclopentene, and cyclohexene. Examples of fluorine-containing olefins include vinyl fluoride, vinylidene fluoride, trifluoroethylene, chlorotrifluoroethylene, tetrafluoroethylene, hexafluoropropylene, and hexafluoroisobutene. It can be illustrated.

ノルボルネン化合物、含フッ素ノルボルネン化合物は一核または複数の核構造を有するノルボルネン単量体である。この際、含フッ素オレフィン、アリルアルコール、含フッ素アリルアルコール、ホモアリルアルコール、含フッ素ホモアリルアルコールがアクリル酸、α−フルオロアクリル酸、α−トリフルオロメチルアクリル酸、メタクリル酸、本明細書で記載したすべてのアクリル酸エステル、メタクリル酸エステル、含フッ素アクリル酸エステルまたは含フッ素メタクリル酸エステル、2−(ベンゾイルオキシ)ペンタフルオロプロパン、2−(メトキシエトキシメチルオキシ)ペンタフルオロプロペン、2−(テトラヒドロキシピラニルオキシ)ペンタフルオロプロペン、2−(ベンゾイルオキシ)トリフルオロエチレン、2−(メトキメチルオキシ)トリフルオロエチレンなどの不飽和化合物と、シクロペンタジエン、シクロヘキサジエンとのDiels−Alder付加反応で生成するノルボルネン化合物で、3−(5−ビシクロ[2.2.1]ヘプテン−2−イル)−1,1,1−トリフルオロ−2−(トリフルオロメチル)−2−プロパノール等が例示できる。なお、以上の共重合性化合物は単独使用でも2種以上の併用でもよい。   The norbornene compound and the fluorine-containing norbornene compound are norbornene monomers having a single nucleus or a plurality of nucleus structures. In this case, fluorine-containing olefin, allyl alcohol, fluorine-containing allyl alcohol, homoallyl alcohol, and fluorine-containing homoallyl alcohol are acrylic acid, α-fluoroacrylic acid, α-trifluoromethylacrylic acid, methacrylic acid, described in the present specification. All acrylates, methacrylates, fluorine-containing acrylic esters or fluorine-containing methacrylates, 2- (benzoyloxy) pentafluoropropane, 2- (methoxyethoxymethyloxy) pentafluoropropene, 2- (tetrahydroxy Di of unsaturated compounds such as pyranyloxy) pentafluoropropene, 2- (benzoyloxy) trifluoroethylene, 2- (methoxymethyloxy) trifluoroethylene with cyclopentadiene and cyclohexadiene A norbornene compound produced by the els-Alder addition reaction, which is 3- (5-bicyclo [2.2.1] hepten-2-yl) -1,1,1-trifluoro-2- (trifluoromethyl) -2 -Propanol and the like can be exemplified. The above copolymerizable compounds may be used alone or in combination of two or more.

本発明の含フッ素化合物の共重合組成比としては特に制限はなく採用されるが、10〜100%の間で選択することが好ましい。さらに好ましくは30〜100%であり、30%未満では応用分野の波長域によっては十分な透明性や成膜性が発現しない。   The copolymer composition ratio of the fluorine-containing compound of the present invention is not particularly limited, and is preferably selected between 10 and 100%. More preferably, it is 30 to 100%. If it is less than 30%, sufficient transparency and film formability are not exhibited depending on the wavelength range of the application field.

本発明にかかる高分子化合物の重合方法としては、一般的に使用される方法であれば特に制限されないが、ラジカル重合、イオン重合などが好ましく、場合により、配位アニオン重合やリビングアニオン重合などを使用することも可能である。ここではより一般的なラジカル重合法を説明する。すなわち、ラジカル重合開始剤あるいはラジカル開始源の存在下で、塊状重合、溶液重合、懸濁重合または乳化重合などの公知の重合方法により、回分式、半連続式または連続式のいずれかの操作で行えばよい。   The polymerization method of the polymer compound according to the present invention is not particularly limited as long as it is a generally used method, but radical polymerization, ionic polymerization and the like are preferable, and in some cases, coordination anion polymerization, living anion polymerization and the like are performed. It is also possible to use it. Here, a more general radical polymerization method will be described. That is, in the presence of a radical polymerization initiator or a radical initiator, it can be carried out by a known polymerization method such as bulk polymerization, solution polymerization, suspension polymerization, or emulsion polymerization in either batch, semi-continuous or continuous operation. Just do it.

ラジカル重合開始剤としては特に限定されるものではないが、例としてアゾ系化合物、過酸化物系化合物、レドックス系化合物が挙げられ、とくにアゾビスイソブチロニトリル、t−ブチルパーオキシピバレート、ジ−t−ブチルパーオキシド、i−ブチリルパーオキシド、ラウロイルパーオキサイド、スクシン酸パーオキシド、ジシンナミルパーオキシド、ジ−n−プロピルパーオキシジカーボネート、t−ブチルパーオキシアリルモノカーボネート、過酸化ベンゾイル、過酸化水素、過硫酸アンモニウム等が好ましい。   The radical polymerization initiator is not particularly limited, and examples thereof include azo compounds, peroxide compounds, and redox compounds. Particularly, azobisisobutyronitrile, t-butylperoxypivalate, Di-t-butyl peroxide, i-butyryl peroxide, lauroyl peroxide, succinic acid peroxide, dicinnamyl peroxide, di-n-propyl peroxydicarbonate, t-butyl peroxyallyl monocarbonate, benzoyl peroxide, Hydrogen peroxide, ammonium persulfate and the like are preferable.

重合反応に用いる反応容器は特に限定されない。また、重合反応においては、重合溶媒を用いてもよい。重合溶媒としては、ラジカル重合を阻害しないものが好ましく、代表的なものとしては、酢酸エチル、酢酸n−ブチルなどのエステル系、アセトン、メチルイソブチルケトンなどのケトン系、トルエン、シクロヘキサンなどの炭化水素系、メタノール、イソプロピルアルコール、エチレングリコールモノメチルエーテルなどのアルコール系溶剤などがある。また水、エーテル系、環状エーテル系、フロン系、芳香族系、などの種々の溶媒を使用することも可能である。これらの溶剤は単独でもあるいは2種類以上を混合しても使用できる。また、メルカプタンのような分子量調整剤を併用してもよい。共重反応の反応温度はラジカル重合開始剤あるいはラジカル重合開始源により適宜変更され、通常は20〜200度が好ましく、特に30〜140度が好ましい。   The reaction vessel used for the polymerization reaction is not particularly limited. In the polymerization reaction, a polymerization solvent may be used. As the polymerization solvent, those which do not inhibit radical polymerization are preferable, and typical ones are ester-based solvents such as ethyl acetate and n-butyl acetate, ketone-based solvents such as acetone and methyl isobutyl ketone, and hydrocarbons such as toluene and cyclohexane. And alcohol solvents such as methanol, isopropyl alcohol, and ethylene glycol monomethyl ether. It is also possible to use various solvents such as water, ethers, cyclic ethers, chlorofluorocarbons, and aromatics. These solvents can be used alone or in admixture of two or more. Moreover, you may use together molecular weight regulators, such as a mercaptan. The reaction temperature of the copolymerization reaction is appropriately changed depending on the radical polymerization initiator or the radical polymerization initiation source, and is usually preferably 20 to 200 degrees, particularly preferably 30 to 140 degrees.

このようにして得られる本発明にかかる高分子化合物の溶液または分散液から、媒質である有機溶媒または水を除去する方法としては、公知の方法のいずれも利用できるが、例を挙げれば再沈殿ろ過または減圧下での加熱留出等の方法がある。得られた本発明の高分子化合物の数平均分子量としては、通常、1,000〜100,000、好ましくは3,000〜50,000の範囲が適切である。   As a method for removing the organic solvent or water as a medium from the solution or dispersion of the polymer compound according to the present invention thus obtained, any of the known methods can be used. There are methods such as filtration or heating distillation under reduced pressure. The number average molecular weight of the obtained polymer compound of the present invention is usually in the range of 1,000 to 100,000, preferably 3,000 to 50,000.

次に本発明による応用分野について記述する。本発明はコーティング用途を基本としており、通常は本発明の高分子化合物を有機溶媒に溶解させて成膜させることで応用に供する。したがって、使用する有機溶媒としては高分子化合物が可溶であれば特に制限されないが、アセトン、メチルエチルケトン、シクロヘキサノン、メチルイソアミルケトン、2‐ヘプタノンなどのケトン類やエチレングリコール、エチレングリコールモノアセテート、ジエチレングリコール、ジエチレングリコールモノアセテート、プロピレングリコール、プロピレングリコールモノアセテート、ジプロピレングリコール、又はジプロピレングリコールモノアセテートのモノメチルエーテル、モノエチルエーテル、モノプロピルエーテル、モノブチルエーテル又はモノフェニルエーテルなどの多価アルコール類及びその誘導体や、ジオキサンのような環式エーテル類や、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸ブチル、ピルビン酸メチル、ピルビン酸エチル、メトキシプロピオン酸メチル、エトキシプロピオン酸エチルなどのエステル類、キシレン、トルエンなどの芳香族系溶媒、フロン、代替フロン、パーフルオロ化合物、ヘキサフルオロイソプロピルアルコールなどのフッ素系溶剤、塗布性を高める目的で高沸点弱溶剤であるターペン系の石油ナフサ溶媒やパラフィン系溶媒などが使用可能である。これらは単独で用いてもよいし、2種以上混合して用いてもよい。   Next, application fields according to the present invention will be described. The present invention is based on coating applications, and is usually used for application by dissolving the polymer compound of the present invention in an organic solvent to form a film. Accordingly, the organic solvent to be used is not particularly limited as long as the polymer compound is soluble, but ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2-heptanone, ethylene glycol, ethylene glycol monoacetate, diethylene glycol, Polyhydric alcohols such as diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol, or dipropylene glycol monoacetate monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and derivatives thereof; , Cyclic ethers such as dioxane, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, pyrubi Esters such as methyl acid, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, aromatic solvents such as xylene and toluene, fluorinated solvents such as chlorofluorocarbons, alternative chlorofluorocarbons, perfluoro compounds, hexafluoroisopropyl alcohol, For the purpose of improving the coating property, a terpene-based petroleum naphtha solvent or a paraffinic solvent, which is a high-boiling weak solvent, can be used. These may be used alone or in combination of two or more.

本発明による反射防止膜としては、本発明による高分子化合物をガラス、プラスチック、液晶パネル、プラズマディスプレーパネル、エレクトロルミネッセンスパネルなどの表面に極薄膜でコーティングしたものであり、単層または他の屈折率を有する薄膜と組み合わせて使用することもできる。反射防止性能を高めるためには高分子化合物の紫外光または可視光線における屈折率を1.42以下にする必要があり、好ましくは1.4以下である。通常、フッ素含量が高いほど屈折率が低下するが、一方でフッ素含量が高まった場合、基材との密着性が低下する欠点がある。その場合、R、Rの一部を水素やラクトン環などの密着性基にした含フッ素化合物を重合することで基材への密着性を高めることが可能である。本発明による反射防止膜の膜厚としては被コート物の屈折率によって異なるが、一般的に500から2000オングストロームの範囲である。 The antireflection film according to the present invention is obtained by coating the polymer compound according to the present invention on the surface of glass, plastic, liquid crystal panel, plasma display panel, electroluminescence panel, etc. with a very thin film, and having a single layer or other refractive index. It can also be used in combination with a thin film having In order to improve the antireflection performance, the refractive index of the polymer compound in ultraviolet light or visible light needs to be 1.42 or less, preferably 1.4 or less. Usually, the higher the fluorine content, the lower the refractive index. On the other hand, when the fluorine content is increased, there is a drawback that the adhesion to the substrate is lowered. In that case, it is possible to improve the adhesiveness to the substrate by polymerizing a fluorine-containing compound in which a part of R 2 and R 3 is an adhesive group such as hydrogen or a lactone ring. The thickness of the antireflection film according to the present invention varies depending on the refractive index of the object to be coated, but is generally in the range of 500 to 2000 angstroms.

本発明によるレジスト材料としては、酸の作用によりアルカリ水溶液に対する溶解性が変化する溶解抑制剤と高分子化合物の双方を含有するもの、または、高分子化合物に溶解抑制剤が組み込まれたものであり、これらは、特に、ポジ型レジスト材料として好適となり、最近の半導体の微細化に対応した248nmKrFまたは193nmArFエキシマレーザーまたは157nmに代表される真空紫外領域のF2レーザー用ポジ型レジスト、電子ビームレジスト、X線用のレジストとしても好適である。すなわち、酸の作用によりアルカリ性水溶液に対する溶解性が変化する溶解抑制剤は、R、Rの少なくともひとつが酸不安定基になるようにしたものであるが、その構造は特に制限なく使用可能である。一般的な酸不安定基としては前述した酸不安定基であり、酸によって切断される官能基である。このような溶解抑制剤を用いた高分子化合物は活性エネルギー線が照射される前にはアルカリ性水溶液に不溶もしくは難溶であって、活性エネルギー線を照射したことにより酸発生剤から発生した酸により加水分解されアルカリ性水溶液に対して溶解性を示すようになる。 The resist material according to the present invention contains both a dissolution inhibitor whose solubility in an alkaline aqueous solution is changed by the action of an acid and a polymer compound, or a dissolution inhibitor incorporated into a polymer compound. These are particularly suitable as positive resist materials, and are 248 nm KrF or 193 nm ArF excimer lasers corresponding to the recent miniaturization of semiconductors, F 2 laser positive resists in the vacuum ultraviolet region typified by 157 nm, electron beam resists, It is also suitable as an X-ray resist. That is, the dissolution inhibitor whose solubility in an alkaline aqueous solution is changed by the action of an acid is such that at least one of R 2 and R 3 becomes an acid labile group, but its structure can be used without any particular limitation. It is. A general acid labile group is the acid labile group described above, which is a functional group that is cleaved by an acid. A polymer compound using such a dissolution inhibitor is insoluble or hardly soluble in an alkaline aqueous solution before being irradiated with active energy rays, and is generated by the acid generated from the acid generator by irradiation with active energy rays. It is hydrolyzed and becomes soluble in alkaline aqueous solution.

本発明組成物に用いられる光酸発生剤については特に制限はなく、化学増幅型レジストの酸発生剤として用いられるものの中から、任意のものを選択して使用することができる。このような酸発生剤の例としては、ビススルホニルジアゾメタン類、ニトロベンジル誘導体類、オニウム塩類、ハロゲン含有トリアジン化合物類、シアノ基含有オキシムスルホネート化合物類、その他のオキシムスルホネート化合物などが挙げられる。これらの酸発生剤は単独で用いてもよいし、2種以上を組み合わせて用いてもよく、また、その含有量は、高分子化合物100重量部に対して、通常0.5〜20重量部の範囲で選ばれる。この量が0.5重量部未満では像形成性が不十分であるし、20重量部を超えると均一な溶液が形成されにくく、保存安定性が低下する傾向がみられる。   There is no restriction | limiting in particular about the photo-acid generator used for this invention composition, Arbitrary things can be selected and used from what is used as an acid generator of a chemically amplified resist. Examples of such acid generators include bissulfonyldiazomethanes, nitrobenzyl derivatives, onium salts, halogen-containing triazine compounds, cyano group-containing oxime sulfonate compounds, and other oxime sulfonate compounds. These acid generators may be used alone or in combination of two or more, and the content thereof is usually 0.5 to 20 parts by weight with respect to 100 parts by weight of the polymer compound. Is selected within the range. If this amount is less than 0.5 parts by weight, the image forming property is insufficient, and if it exceeds 20 parts by weight, a uniform solution is hardly formed, and the storage stability tends to be lowered.

本発明のレジストの使用方法としては、従来のフォトレジスト技術のレジストパターン形成方法が用いられるが、好適に行うには、まずシリコンウエーハのような支持体上に、レジスト組成物の溶液をスピンナーなどで塗布し、乾燥して感光層を形成させ、これに露光装置などにより、エキシマレーザー光を所望のマスクパターンを介して照射し、加熱する。次いでこれを現像液、例えば0.1〜10重量%テトラメチルアンモニウムヒドロキシド水溶液のようなアルカリ性水溶液などを用いて現像処理する。この形成方法でマスクパターンに忠実なパターンを得ることができる。   As a method of using the resist of the present invention, a resist pattern forming method of a conventional photoresist technique is used, but in order to suitably perform it, first, a resist composition solution is spinner or the like on a support such as a silicon wafer. And drying to form a photosensitive layer, which is irradiated with an excimer laser beam through a desired mask pattern by an exposure apparatus or the like and heated. Next, this is developed using a developer, for example, an alkaline aqueous solution such as a 0.1 to 10% by weight tetramethylammonium hydroxide aqueous solution. With this forming method, a pattern faithful to the mask pattern can be obtained.

本発明の応用分野は、さらに所望により混和性のある添加物、例えば付加的樹脂、クエンチャー、可塑剤、安定剤、着色剤、界面活性剤、増粘剤、レベリング剤、消泡剤、相溶化剤、密着剤、酸化防止剤などの種々添加剤を含有させることができる。   The fields of application of the present invention further include optionally miscible additives, such as additional resins, quenchers, plasticizers, stabilizers, colorants, surfactants, thickeners, leveling agents, antifoaming agents, phases. Various additives such as a solubilizer, an adhesion agent, and an antioxidant can be contained.

次に本発明を実施例によりさらに詳細に説明するが、本発明はこれらの例によってなんら限定されるものではない。   EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited at all by these examples.

一般式(4)に示す化合物は次の方法で合成した。   The compound represented by the general formula (4) was synthesized by the following method.

ニトロ化
メカニカルスターラー、温度計を備えた3口フラスコに濃硫酸(1.83L)と一般式(6)に示す化合物(1kg)を入れた。氷冷下、濃硝酸(0.74L)を滴下し、室温で18時間攪拌した。反応液を氷に投入し二層に分け、水層を塩化メチレンで二回抽出し、あわせた有機層を水、飽和食塩水で洗浄した後、無水硫酸マグネシウムで乾燥、濾過し、濾液をエパポレーターで濃縮した。得られた残査を減圧下で蒸留して一般式(7)に示す化合物(1.05kg、95%)を得た。
1H−NMR(TMS、CDCl3):4.13(2H、br)、8.45(1H
、s)、8.78(2H、s)
アミノ化
一般式(7)に示す化合物(340g)、パラジウム−炭素(3.4g)、メタノール(1.36L)をSUS製耐圧容器に入れた。内温を65℃にして、水素圧を5kgf/cm2で保ちながら水素を導入し、3時間攪拌した。反応終了後、減圧濾過し、濾液をエパポレーターで濃縮した。得られた固体を塩化メチレンで洗浄、濾過、真空乾燥して一般式(8)に示す化合物(281g、88%)を得た。
1H−NMR(TMS、CDCl3):4.57(2H、br)、5.91(2H、s)、7.12(1H、s)、7.29(2H、s)
フェノール化
滴下ロート、メカニカルスターラー、温度計を備えた3口フラスコに、一般式(8)に示す化合物(20g)と20%硫酸水(300mL)を入れ、0℃に冷やした。亜硫酸ナトリウム(3.6g)の水溶液(19mL)を滴下し、0℃で1時間攪拌した。その反応溶液を110℃の20%硫酸水(90mL)に滴下した。下層に沈殿した黒色油状物質を取り出して水で洗浄し、これを減圧下で蒸留して一般式(4)に示す化合物(8.5g、42%)を得た。
1H−NMR(TMS、CDCl3):3.73(3H、br)、7.34(2H、s)、7.66(1H、s)
GC−MS(EI法):m/e 426(M)。
Nitration Concentrated sulfuric acid (1.83 L) and a compound represented by the general formula (6) (1 kg) were placed in a three-necked flask equipped with a mechanical stirrer and a thermometer. Concentrated nitric acid (0.74 L) was added dropwise under ice cooling, and the mixture was stirred at room temperature for 18 hours. The reaction solution is poured into ice, divided into two layers, the aqueous layer is extracted twice with methylene chloride, the combined organic layer is washed with water and saturated brine, dried over anhydrous magnesium sulfate, filtered, and the filtrate is evaporated. Concentrated with. The obtained residue was distilled under reduced pressure to obtain a compound represented by the general formula (7) (1.05 kg, 95%).
1 H-NMR (TMS, CDCl 3 ): 4.13 (2H, br), 8.45 (1H
, S), 8.78 (2H, s)
Amination A compound (340 g) represented by the general formula (7), palladium-carbon (3.4 g), and methanol (1.36 L) were placed in a pressure vessel made of SUS. Hydrogen was introduced while maintaining the internal temperature at 65 ° C. and the hydrogen pressure at 5 kgf / cm 2, and the mixture was stirred for 3 hours. After completion of the reaction, the reaction mixture was filtered under reduced pressure, and the filtrate was concentrated with an evaporator. The obtained solid was washed with methylene chloride, filtered, and dried under vacuum to obtain a compound represented by the general formula (8) (281 g, 88%).
1 H-NMR (TMS, CDCl 3 ): 4.57 (2H, br), 5.91 (2H, s), 7.12 (1H, s), 7.29 (2H, s)
Phenolization A compound (20 g) represented by the general formula (8) and 20% aqueous sulfuric acid (300 mL) were placed in a three-necked flask equipped with a dropping funnel, a mechanical stirrer, and a thermometer, and cooled to 0 ° C. An aqueous solution (19 mL) of sodium sulfite (3.6 g) was added dropwise, and the mixture was stirred at 0 ° C. for 1 hour. The reaction solution was added dropwise to 20% sulfuric acid water (90 mL) at 110 ° C. The black oily substance precipitated in the lower layer was taken out, washed with water, and distilled under reduced pressure to obtain the compound represented by the general formula (4) (8.5 g, 42%).
1 H-NMR (TMS, CDCl 3 ): 3.73 (3H, br), 7.34 (2H, s), 7.66 (1H, s)
GC-MS (EI method): m / e 426 (M <+> ).

一般式(5)に示す化合物の合成。   Synthesis of a compound represented by the general formula (5).

一般式(4)で示される化合物(50g)とロジウム−炭素触媒(0.5g)のTHF(200mL)懸濁液をSUS製耐圧容器に入れ130℃に加熱した。水素圧を80kgf/cm2に保ちながら水素を導入し、4時間攪拌した。反応後、濾過により触媒を除去し、濾液をエバポレーターで濃縮し、残査を減圧下で蒸留して一般式(5)で示される化合物(41g、85%)が得られ、IRスペクトルでベンゼン環の消失を確認した。   A suspension of the compound represented by the general formula (4) (50 g) and the rhodium-carbon catalyst (0.5 g) in THF (200 mL) was placed in a SUS pressure vessel and heated to 130 ° C. Hydrogen was introduced while maintaining the hydrogen pressure at 80 kgf / cm 2 and stirred for 4 hours. After the reaction, the catalyst was removed by filtration, the filtrate was concentrated with an evaporator, and the residue was distilled under reduced pressure to obtain the compound represented by the general formula (5) (41 g, 85%). Disappearance was confirmed.

一般式(9)に示す化合物の合成。   Synthesis of a compound represented by the general formula (9).

攪拌子、温度計、Dean−Stark水分離器、還流冷却管を備えた3口フラスコに、一般式(4)に示す化合物(15g)とアクリル酸(3.8g)のトルエン(50mL)溶液と濃硫酸(0.05mL)を加え、5時間還流した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(9)に示す化合物(8.8g、52%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。   In a three-necked flask equipped with a stirrer, thermometer, Dean-Stark water separator, and reflux condenser, a toluene (50 mL) solution of the compound (15 g) represented by the general formula (4) and acrylic acid (3.8 g) Concentrated sulfuric acid (0.05 mL) was added and refluxed for 5 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain the compound represented by the general formula (9) (8.8 g, 52%), and the absorption of ester carbonyl was confirmed by IR spectrum.

一般式(10)に示す化合物の合成   Synthesis of compound represented by general formula (10)

滴下ロート、攪拌子、温度計を備えた3口フラスコに、一般式(4)に示す化合物(15g)、トリエチルアミン(8.9g)と塩化メチレン(50mL)溶液を入れる。氷冷下、アクリル酸クロライド(8.0g)を滴下し、室温で3時間攪拌した。終了後、反応液を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(10)に示す化合物(12.0g、64%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。   A compound (15 g) represented by the general formula (4), triethylamine (8.9 g) and a solution of methylene chloride (50 mL) are placed in a three-necked flask equipped with a dropping funnel, a stirrer, and a thermometer. Acrylic acid chloride (8.0 g) was added dropwise under ice cooling, and the mixture was stirred at room temperature for 3 hours. After completion, the reaction solution was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain the compound represented by the general formula (10) (12.0 g, 64%), and the absorption of ester carbonyl was confirmed by IR spectrum.

一般式(11)に示す化合物の合成   Synthesis of compound represented by general formula (11)

攪拌子、温度計、Dean−Stark水分離器、還流冷却管を備えた3口フラスコに、一般式(4)に示す化合物(15g)とトリフルオロメチルアクリル酸(7.4g)のトルエン(50mL)溶液と濃硫酸(0.05mL)を加え、9時間還流した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(11)に示す化合物(11g、58%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。   In a three-necked flask equipped with a stirrer, thermometer, Dean-Stark water separator and reflux condenser, toluene (50 mL) of the compound represented by the general formula (4) (15 g) and trifluoromethylacrylic acid (7.4 g) ) Solution and concentrated sulfuric acid (0.05 mL) were added and refluxed for 9 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain a compound represented by the general formula (11) (11 g, 58%), and the absorption of ester carbonyl was confirmed by IR spectrum.

一般式(12)に示す化合物の合成   Synthesis of compound represented by general formula (12)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(4)に示す化合物(20g)のジメチルホルムアミド(80mL)溶液を加え、氷冷した。次に、水素化ナトリウム(3.4g)を加え、水素が発生しなくなるまで攪拌した後、臭化アリル(8.5g)のジメチルホルムアミド(20mL)を滴下し、室温で攪拌した。反応終了後、水を加え、ジエチルエーテルで抽出した。有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(12)に示す化合物(15.6g、72%)が得られ、IRスペクトルで二重結合の吸収を確認した。   A dimethylformamide (80 mL) solution of the compound (20 g) represented by the general formula (4) was added to a three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel, and cooled with ice. Next, sodium hydride (3.4 g) was added, and the mixture was stirred until hydrogen was no longer generated. Allyl bromide (8.5 g) in dimethylformamide (20 mL) was added dropwise, and the mixture was stirred at room temperature. After completion of the reaction, water was added and extracted with diethyl ether. The organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound represented by the general formula (12) (15.6 g, 72%), and absorption of double bonds was confirmed by IR spectrum. did.

一般式(13)に示す化合物の合成   Synthesis of compound represented by general formula (13)

攪拌子、温度計、還流冷却管を備えた3口フラスコに、一般式(4)に示す化合物(10g)、エチルビニルエーテル(2.5g)、パラトルエンスルホン酸一水和物(0.4g)とトルエン(60mL)を加え、室温で7時間攪拌した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(13)に示す化合物(5.6g、48%)が得られ、IRスペクトルで水酸基の吸収の消失を確認した。   In a three-necked flask equipped with a stirrer, a thermometer, and a reflux condenser, the compound represented by the general formula (4) (10 g), ethyl vinyl ether (2.5 g), paratoluenesulfonic acid monohydrate (0.4 g) And toluene (60 mL) were added, and the mixture was stirred at room temperature for 7 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain the compound represented by the general formula (13) (5.6 g, 48%), and the disappearance of hydroxyl absorption was confirmed by IR spectrum.

一般式(14)に示す化合物の合成   Synthesis of compound represented by general formula (14)

攪拌子、温度計、還流冷却管を備えた3口フラスコに、一般式(4)に示す化合物(10g)、ノナフルオロブチルビニルエーテル(9.2g)、パラトルエンスルホン酸
一水和物(0.4g)とトルエン(60mL)を加え、室温で19時間攪拌した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(14)に示す化合物(5.7g、35%)が得られ、IRスペクトルで水酸基の吸収の消失を確認した。
In a three-necked flask equipped with a stirrer, a thermometer, and a reflux condenser, a compound (10 g) represented by the general formula (4), nonafluorobutyl vinyl ether (9.2 g), paratoluenesulfonic acid monohydrate (0. 4 g) and toluene (60 mL) were added, and the mixture was stirred at room temperature for 19 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain the compound (5.7 g, 35%) represented by the general formula (14), and the disappearance of hydroxyl absorption was confirmed by IR spectrum.

一般式(15)に示す化合物の合成   Synthesis of compound represented by general formula (15)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(13)に示す化合物(18g)、トリエチルアミン(12.8g)と塩化メチレン(45mL)を加え、氷冷する。トリフルオロメチルアクリル酸クロライド(8.6g)の塩化メチレン(20mL)溶液を滴下した後、室温で7時間攪拌する。終了後、反応溶液を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(15)に示す化合物(9.6g、43%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。   A compound (18 g) represented by the general formula (13), triethylamine (12.8 g) and methylene chloride (45 mL) are added to a three-necked flask equipped with a stirrer, a thermometer and a dropping funnel, and the mixture is cooled with ice. A solution of trifluoromethylacrylic acid chloride (8.6 g) in methylene chloride (20 mL) is added dropwise, and the mixture is stirred at room temperature for 7 hours. After completion of the reaction, the reaction solution was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound (9.6 g, 43%) represented by the general formula (15). Absorption was confirmed.

一般式(16)に示す化合物の合成   Synthesis of compound represented by general formula (16)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(13)に示す化合物(17g)のジメチルホルムアミド(50mL)溶液を加え、氷冷した。次に、水素化ナトリウム(2.0g)を加え、水素が発生しなくなるまで攪拌した後、臭化アリル(6.2g)のジメチルホルムアミド(20mL)を滴下し、室温で攪拌した。反応終了後、水を加え、ジエチルエーテルで抽出した。有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(16)に示す化合物(12.3g、67%)が得られ、IRスペクトルで二重結合の吸収を確認した。
参考例11]
A dimethylformamide (50 mL) solution of the compound (17 g) represented by the general formula (13) was added to a three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel, and cooled with ice. Next, sodium hydride (2.0 g) was added, and the mixture was stirred until hydrogen was not generated. Then, dimethylformamide (20 mL) of allyl bromide (6.2 g) was added dropwise, and the mixture was stirred at room temperature. After completion of the reaction, water was added and extracted with diethyl ether. The organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound represented by the general formula (16) (12.3 g, 67%), and absorption of double bonds was confirmed by IR spectrum. did.
[ Reference Example 11]

一般式(17)に示す化合物の合成   Synthesis of compound represented by general formula (17)

攪拌子、温度計、Dean−Stark水分離器、還流冷却管を備えた3口フラスコに、一般式(5)に示す化合物(30g)とトリフルオロメチルアクリル酸(15.9g)のトルエン(100mL)溶液と濃硫酸(0.1mL)を加え、9時間還流した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(17)に示す化合物(27.6g、73%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。
参考例12]
In a three-necked flask equipped with a stirrer, thermometer, Dean-Stark water separator, and reflux condenser, toluene (100 mL) of the compound represented by the general formula (5) (30 g) and trifluoromethylacrylic acid (15.9 g) ) Solution and concentrated sulfuric acid (0.1 mL) were added and refluxed for 9 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain the compound represented by the general formula (17) (27.6 g, 73%), and the absorption of ester carbonyl was confirmed by IR spectrum.
[ Reference Example 12]

一般式(18)に示す化合物の合成   Synthesis of compound represented by general formula (18)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(5)に示す化合物(10g)のジメチルホルムアミド(50mL)溶液を加え、氷冷した。次に、水素化ナトリウム(1.8g)を加え、水素が発生しなくなるまで攪拌した後、臭化アリル(4.3g)のジメチルホルムアミド(10mL)を滴下し、室温で攪拌した。反応終了後、水を加え、ジエチルエーテルで抽出した。有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(18)に示す化合物(6.4g、63%)が得られ、IRスペクトルで二重結合の吸収を確認した。
参考例13]
A dimethylformamide (50 mL) solution of the compound (10 g) represented by the general formula (5) was added to a three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel, and cooled with ice. Next, sodium hydride (1.8 g) was added, and the mixture was stirred until hydrogen was not generated. Then, dimethylformamide (10 mL) of allyl bromide (4.3 g) was added dropwise, and the mixture was stirred at room temperature. After completion of the reaction, water was added and extracted with diethyl ether. The organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound (6.4 g, 63%) represented by the general formula (18), and the absorption of double bonds was confirmed by IR spectrum. did.
[ Reference Example 13]

一般式(19)に示す化合物の合成   Synthesis of compound represented by general formula (19)

攪拌子、温度計、還流冷却管を備えた3口フラスコに、一般式(5)に示す化合物(13g)、エチルビニルエーテル(3.3g)、パラトルエンスルホン酸一水和物(0.5g)とトルエン(70mL)を加え、室温で4時間攪拌した。反応終了後、飽和炭酸水素ナトリウム水溶液で中和し、有機層を水、飽和食塩水で洗浄し、エバポレーターで濃縮した。残査を減圧下で蒸留して一般式(19)に示す化合物(8.3g、55%)が得られ、IRスペクトルで水酸基の吸収の消失を確認した。
参考例14]
In a three-necked flask equipped with a stirrer, a thermometer, and a reflux condenser, the compound represented by the general formula (5) (13 g), ethyl vinyl ether (3.3 g), p-toluenesulfonic acid monohydrate (0.5 g) And toluene (70 mL) were added, and the mixture was stirred at room temperature for 4 hours. After completion of the reaction, the mixture was neutralized with a saturated aqueous sodium hydrogen carbonate solution, and the organic layer was washed with water and saturated brine, and concentrated with an evaporator. The residue was distilled under reduced pressure to obtain a compound (8.3 g, 55%) represented by the general formula (19), and the disappearance of hydroxyl absorption was confirmed by IR spectrum.
[ Reference Example 14]

一般式(20)に示す化合物の合成   Synthesis of compound represented by general formula (20)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(19)に示す化合物(9g)、トリエチルアミン(6.5g)と塩化メチレン(20mL)を加え、氷冷する。
トリフルオロメチルアクリル酸クロライド(4.4g)の塩化メチレン(20mL)溶液を滴下した後、室温で19時間攪拌する。終了後、反応溶液を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(20)に示す化合物(7.6g、68%)が得られ、IRスペクトルでエステルのカルボニルの吸収を確認した。
参考例15]
A compound (9 g) represented by the general formula (19), triethylamine (6.5 g) and methylene chloride (20 mL) are added to a three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel, and cooled with ice.
A solution of trifluoromethylacrylic acid chloride (4.4 g) in methylene chloride (20 mL) is added dropwise, followed by stirring at room temperature for 19 hours. After completion, the reaction solution was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound represented by the general formula (20) (7.6 g, 68%). Absorption was confirmed.
[ Reference Example 15]

一般式(21)に示す化合物の合成   Synthesis of compound represented by general formula (21)

攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(17)に示す化合物(15g)、炭酸カリウム(13.1g)とアセトン(100mL)を加えた。次に、クロロメチルメチルエーテル(5.4g)を加え、還流した。反応終了後、水を加え、ジエチルエーテルで抽出した。有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(21)に示す化合物(7.5g、43%)が得られ、IRスペクトルで水酸基の吸収の消失を確認した。MOMは、CH3OCH2−を示す。
参考例16]
A compound (15 g) represented by the general formula (17), potassium carbonate (13.1 g), and acetone (100 mL) were added to a three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel. Next, chloromethyl methyl ether (5.4 g) was added and refluxed. After completion of the reaction, water was added and extracted with diethyl ether. The organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound (7.5 g, 43%) represented by the general formula (21), and the disappearance of hydroxyl group absorption was confirmed by IR spectrum. did. MOM represents CH 3 OCH 2 —.
[ Reference Example 16]

一般式(23)に示す化合物の合成   Synthesis of the compound represented by the general formula (23)

トリフラート化
攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(5)に示す化合物(20g)、トリエチルアミン(16.4g)と塩化メチレン(85mL)を入れ、−30℃に冷やした。次に、トリフルオロメタンスルホン酸無水物(19.6g)を滴下し、5時間攪拌した。反応終了後、有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(22)に示す化合物(14.9g、57%)が得られ、IRスペクトルでスルホニル基の吸収を確認した。
A compound (20 g) represented by the general formula (5), triethylamine (16.4 g) and methylene chloride (85 mL) are placed in a three-necked flask equipped with a triflating stirrer, a thermometer, and a dropping funnel, and cooled to -30 ° C. It was. Next, trifluoromethanesulfonic anhydride (19.6 g) was added dropwise and stirred for 5 hours. After completion of the reaction, the organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound (14.9 g, 57%) represented by the general formula (22). Absorption was confirmed.

ビニル化
攪拌子、温度計、滴下ロートを備えた3口フラスコに、一般式(22)に示す化合物(10g)、ヨウ化銅(0.3g)とTHF(30mL)を入れ、−30℃に冷やした。次に、ビニルマグネシウムブロマイド(5.4g)のTHF(30mL)溶液を滴下し、18時間攪拌した。反応終了後、有機層を水、飽和食塩水で洗浄し、これを減圧下で蒸留して一般式(23)に示す化合物(5.7g、70%)が得られ、IRスペクトルでビニル基の吸収を確認した。
Vinylation A three-necked flask equipped with a stirrer, a thermometer and a dropping funnel was charged with the compound represented by the general formula (22) (10 g), copper iodide (0.3 g) and THF (30 mL), and the temperature was kept at -30 ° C. Chilled. Next, a THF (30 mL) solution of vinylmagnesium bromide (5.4 g) was added dropwise and stirred for 18 hours. After completion of the reaction, the organic layer was washed with water and saturated brine, and distilled under reduced pressure to obtain the compound (5.7 g, 70%) represented by the general formula (23). Absorption was confirmed.

一般式(11)に示す化合物の重合   Polymerization of the compound represented by the general formula (11)

還流冷却管、攪拌子を備えた三口フラスコに、一般式(11)であらわされる化合物(10g)を入れ、重合開始剤としてAIBN(0.2g)を入れ、重合溶媒として酢酸n−ブチル(40g)を入れた。このフラスコを60℃のオイルバスで加熱して20時間反応させた。反応後、反応溶液をn−ヘキサン(1L)に投入して攪拌した。生成した沈殿を濾過してとり、50℃で18時間真空乾燥した。得られたポリマーの組成は1H−NMRおよび19F−NMRから、分子量に関して(Mw、Mn、Mw/Mn)はGPC分析(標準ポリスチレン)から求めた。結果を表1に示した。 Into a three-necked flask equipped with a reflux condenser and a stirrer, the compound represented by the general formula (11) (10 g) was added, AIBN (0.2 g) was added as a polymerization initiator, and n-butyl acetate (40 g) was used as a polymerization solvent. ) The flask was heated in an oil bath at 60 ° C. and reacted for 20 hours. After the reaction, the reaction solution was added to n-hexane (1 L) and stirred. The resulting precipitate was filtered off and dried in vacuo at 50 ° C. for 18 hours. The composition of the obtained polymer was determined from 1 H-NMR and 19 F-NMR, and the molecular weight (Mw, Mn, Mw / Mn) was determined from GPC analysis (standard polystyrene). The results are shown in Table 1.

一般式(11)に示す化合物と一般式(24)に示す化合物の共重合   Copolymerization of compound represented by general formula (11) and compound represented by general formula (24)

一般式(11)で示される化合物(10g)と一般式(24)で示される化合物(8.0g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。tBOCは、t-ブチルオキシカルボニルを示す。   Polymerization was carried out in the same manner as in Example 17, using the compound (10 g) represented by the general formula (11) and the compound (8.0 g) represented by the general formula (24). The results are shown in Table 1. tBOC represents t-butyloxycarbonyl.

一般式(15)に示す化合物と一般式(25)に示す化合物の共重合   Copolymerization of compound represented by general formula (15) and compound represented by general formula (25)

一般式(15)で示される化合物(10g)と一般式(25)で示される化合物(7.5g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。   Polymerization was carried out in the same manner as in Example 17, using the compound represented by the general formula (15) (10 g) and the compound represented by the general formula (25) (7.5 g). The results are shown in Table 1.

一般式(12)に示す化合物と一般式(26)に示す化合物の共重合   Copolymerization of compound represented by general formula (12) and compound represented by general formula (26)

一般式(12)で示される化合物(10g)と一般式(26)で示される化合物(10g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。   Polymerization was carried out in the same manner as in Example 17, using the compound (10 g) represented by the general formula (12) and the compound (10 g) represented by the general formula (26). The results are shown in Table 1.

一般式(17)に示す化合物と一般式(27)に示す化合物の共重合   Copolymerization of compound represented by general formula (17) and compound represented by general formula (27)

一般式(17)で示される化合物(8.2g)と一般式(27)で示される化合物(10g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。   Polymerization was carried out in the same manner as in Example 17, using the compound (8.2 g) represented by the general formula (17) and the compound (10 g) represented by the general formula (27). The results are shown in Table 1.

一般式(20)に示す化合物と一般式(25)に示す化合物の共重合   Copolymerization of compound represented by general formula (20) and compound represented by general formula (25)

一般式(20)で示される化合物(9.3g)と一般式(25)で示される化合物(10g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。
参考例23]
Polymerization was carried out in the same manner as in Example 17, using the compound represented by the general formula (20) (9.3 g) and the compound represented by the general formula (25) (10 g). The results are shown in Table 1.
[ Reference Example 23]

一般式(18)に示す化合物と一般式(28)に示す化合物の共重合   Copolymerization of compound represented by general formula (18) and compound represented by general formula (28)

一般式(18)で示される化合物(10g)、一般式(28)で示される化合物(12g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。
参考例24]
Polymerization was carried out in the same manner as in Example 17, using the compound represented by the general formula (18) (10 g) and the compound represented by the general formula (28) (12 g). The results are shown in Table 1.
[ Reference Example 24]

一般式(21)に示す化合物と一般式(29)に示す化合物の共重合   Copolymerization of compound represented by general formula (21) and compound represented by general formula (29)

一般式(21)で示される化合物(15g)、一般式(29)で示される化合物(7.7g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。
参考例25]
Polymerization was carried out in the same manner as in Example 17, using the compound represented by the general formula (21) (15 g) and the compound represented by the general formula (29) (7.7 g). The results are shown in Table 1.
[ Reference Example 25]

一般式(20)に示す化合物、一般式(30)に示す化合物、一般式(31)に示す化合物の共重合   Copolymerization of compound represented by general formula (20), compound represented by general formula (30), compound represented by general formula (31)

一般式(20)で示される化合物(10g)、一般式(30)で示される化合物(5.4g)、一般式(31)で示される化合物(6.8g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。
参考例26]
The same as Example 17 using the compound (10 g) represented by the general formula (20), the compound (5.4 g) represented by the general formula (30), and the compound (6.8 g) represented by the general formula (31) Polymerization was carried out by the method. The results are shown in Table 1.
[ Reference Example 26]

一般式(23)に示す化合物と一般式(28)に示す化合物の共重合   Copolymerization of compound represented by general formula (23) and compound represented by general formula (28)

一般式(23)で示される化合物(10g)と一般式(28)で示される化合物(10g)を用い、実施例17と同様の方法で重合を行った。結果を表1に示した。   Polymerization was carried out in the same manner as in Example 17, using the compound (10 g) represented by the general formula (23) and the compound (10 g) represented by the general formula (28). The results are shown in Table 1.

実施例17で得られた高分子化合物100重量部(以下、部という)をメチルイソブチルケトンに溶解させ約30%の固形分濃度になるように調整した。これらをガラス板上に展開させ、50ミクロンのフィルムを作製した。自然乾燥1時間後、100℃の熱風乾燥機で30分、強制乾燥し、架橋反応を促進させた。これらの屈折率をアッベ屈折計で測定したところ、1.376であった。次いで、上記の約30%の溶液に対し、さらに希釈を行いし約2%の濃度になるようにしてからスピンコート法にてガラス基板上に薄膜を形成し、100℃で3分間乾燥したところ膜厚が1030オングストロームであった。得られたガラス板の反射率を測定したところ、650nmの波長域に対し0.9%と高レベルな反射防止性能が見られた。   100 parts by weight (hereinafter referred to as “parts”) of the polymer compound obtained in Example 17 was dissolved in methyl isobutyl ketone and adjusted to a solid content concentration of about 30%. These were spread on a glass plate to produce a 50 micron film. After 1 hour of natural drying, forced drying was performed for 30 minutes with a hot air dryer at 100 ° C. to promote the crosslinking reaction. When these refractive indexes were measured with the Abbe refractometer, it was 1.376. Next, the above 30% solution was further diluted to a concentration of about 2%, and then a thin film was formed on a glass substrate by spin coating and dried at 100 ° C. for 3 minutes. The film thickness was 1030 angstroms. When the reflectance of the obtained glass plate was measured, antireflection performance at a high level of 0.9% with respect to the wavelength range of 650 nm was observed.

実施例または参考例17〜26の高分子化合物をプロピレングリコールメチルアセテートに溶解させ、固形分14%になるように調整した。さらに高分子化合物100重量部に対して、酸発生剤としてみどり化学製トリフェニルスルフォニウムトリフレート(TPS105)を2重量部になるように溶解し、2種類のレジスト溶液を調整した。これらをスピンコートし、膜厚100ナノメータの光透過率を波長157nmにて測定したところ、実施例または参考例17〜26に対しそれぞれ71%、69%、68%、61%、72%、65%、68%、74%、63%、71%であり、真空紫外域の波長で高い透明性を発現した。 The polymer compounds of Examples or Reference Examples 17 to 26 were dissolved in propylene glycol methyl acetate and adjusted to a solid content of 14%. Furthermore, Midori Chemical's triphenylsulfonium triflate (TPS105) was dissolved in 2 parts by weight as an acid generator with respect to 100 parts by weight of the polymer compound to prepare two types of resist solutions. When these were spin-coated and the light transmittance of a film thickness of 100 nanometers was measured at a wavelength of 157 nm, they were 71%, 69%, 68%, 61%, 72%, 65, respectively, with respect to Examples or Reference Examples 17 to 26. %, 68%, 74%, 63%, 71%, and high transparency was exhibited at wavelengths in the vacuum ultraviolet region.

次いで、実施例18、21、参考例23、24、26のレジスト溶液を孔径0.2μmのメンブランフィルターでろ過した後、各組成物溶液をシリコンウェハー上にスピンコートし膜厚250ナノメータのレジスト膜を得た。110℃でプリベークを行った後、フォトマスクを介して248nm紫外線での露光を行ったのち、120℃でポストエクスポーザーベークを行った。その後、2.38重量%テトラメチルアンモニウムヒドロキシド水溶液を用い、23℃で1分間現像したところ、現像欠陥のないパターン形状が得られた。
Next, the resist solutions of Examples 18 and 21, and Reference Examples 23, 24, and 26 were filtered through a membrane filter having a pore size of 0.2 μm, and then each composition solution was spin-coated on a silicon wafer to form a resist film having a thickness of 250 nanometers. Got. After pre-baking at 110 ° C., exposure with 248 nm ultraviolet light was performed through a photomask, and then post-exposure baking was performed at 120 ° C. Thereafter, development was performed at 23 ° C. for 1 minute using a 2.38 wt% tetramethylammonium hydroxide aqueous solution, and a pattern shape free from development defects was obtained.

Claims (12)

一般式(1)で表される含フッ素化合物(式中、置換基は1位、3位または5位に配位し、R1はメチル基またはトリフルオロメチル基を表し、R2、R3は水素原子、炭素数1〜25の直鎖状、分岐状もしくは環状の炭化水素基または芳香族炭化水素基を含む基であって、その一部にフッ素原子、酸素原子、カルボニル結合を含んでもよい。lはを表し、mは1、nは2を表す。R1〜R3が複数の場合、R1〜R3はそれぞれ同一でも異なってもよい。)。
Fluorine-containing compound represented by general formula (1) (wherein the substituent is coordinated at the 1-position, 3-position or 5-position, R 1 represents a methyl group or a trifluoromethyl group, R 2 , R 3 Is a group containing a hydrogen atom, a linear, branched or cyclic hydrocarbon group having 1 to 25 carbon atoms or an aromatic hydrocarbon group, and a part thereof may contain a fluorine atom, an oxygen atom or a carbonyl bond. L represents 0 , m represents 1 and n represents 2. When R 1 to R 3 are plural, R 1 to R 3 may be the same or different.
1がトリフルオロメチル基である請求項1に記載の含フッ素化合物。 The fluorine-containing compound according to claim 1, wherein R 1 is a trifluoromethyl group. 2、R3のうち少なくともひとつが、ビニル基、アリル基、アクリロイル基、メタクリロイル基、またはそれらの官能基に含まれる水素原子の一部もしくは全部がフッ素原子で置換された官能基またはそれらを含有する置換基である請求項1または2に記載の含フッ素化合物。 At least one of R 2 and R 3 is a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, or a functional group in which some or all of the hydrogen atoms contained in these functional groups are substituted with fluorine atoms, or The fluorine-containing compound according to claim 1, which is a substituent to be contained. 2、R3のうち少なくともひとつが、トリフルオロビニル基、ジフルオロトリフルオロメチルビニル基、フルオロアクリロイル基、トリフルオロメチルアクリロイル基、ノニルフルオロブチルアクリロイル基から選ばれた置換基を含む請求項1または2に記載の含フッ素化合物。 2. At least one of R 2 and R 3 includes a substituent selected from a trifluorovinyl group, a difluorotrifluoromethylvinyl group, a fluoroacryloyl group, a trifluoromethylacryloyl group, and a nonylfluorobutylacryloyl group. 2. The fluorine-containing compound according to 2. 2、R3のうち少なくともひとつに酸不安定性基(酸不安定性基は酸脱離基であって、一部に酸素原子、カルボニル結合、フッ素原子を含んでもよい。)を含有した請求項1または2に記載の含フッ素化合物。 At least one of R 2 and R 3 contains an acid labile group (the acid labile group is an acid leaving group, and may partially contain an oxygen atom, a carbonyl bond, or a fluorine atom). The fluorine-containing compound according to 1 or 2. 2、R3のうち少なくともひとつに酸不安定性基(酸不安定性基は酸脱離基であって、一部に酸素原子、カルボニル結合、フッ素原子を含んでもよい。)を含有した請求項3または4に記載の含フッ素化合物。 At least one of R 2 and R 3 contains an acid labile group (the acid labile group is an acid leaving group, and may partially contain an oxygen atom, a carbonyl bond, or a fluorine atom). 5. The fluorine-containing compound according to 3 or 4. 請求項3または4に記載の含フッ素化合物をラジカル重合またはイオン重合により重合または共重合して得られた高分子化合物。 5. A polymer compound obtained by polymerizing or copolymerizing the fluorine-containing compound according to claim 3 or 4 by radical polymerization or ionic polymerization. 請求項6に記載の含フッ素化合物をラジカル重合またはイオン重合により重合または共重合して得られた高分子化合物。 A polymer compound obtained by polymerizing or copolymerizing the fluorine-containing compound according to claim 6 by radical polymerization or ionic polymerization. 請求項7または8に記載の高分子化合物を用いた紫外光または可視光の反射防止膜材料。 An antireflection film material for ultraviolet light or visible light using the polymer compound according to claim 7 or 8. 請求項5に記載の含フッ素化合物または請求項8に記載の高分子化合物を含有したレジスト材料。 A resist material containing the fluorine-containing compound according to claim 5 or the polymer compound according to claim 8. 請求項5に記載の含フッ素化合物または請求項8に記載の高分子化合物を溶解抑制剤として用いたレジスト材料。 A resist material using the fluorine-containing compound according to claim 5 or the polymer compound according to claim 8 as a dissolution inhibitor. 一般式(4)で表される含フッ素化合物。
A fluorine-containing compound represented by the general formula (4).
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