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JP4499577B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP4499577B2
JP4499577B2 JP2005011397A JP2005011397A JP4499577B2 JP 4499577 B2 JP4499577 B2 JP 4499577B2 JP 2005011397 A JP2005011397 A JP 2005011397A JP 2005011397 A JP2005011397 A JP 2005011397A JP 4499577 B2 JP4499577 B2 JP 4499577B2
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Japan
Prior art keywords
electrode
lead
semiconductor element
semiconductor device
wiring
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JP2005011397A
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Japanese (ja)
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JP2006202885A (en
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進吾 須藤
聡 平川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、半導体装置に関し、特に、半導体素子と外部電極とがリードで接続された電力用半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly to a power semiconductor device in which a semiconductor element and an external electrode are connected by leads.

電力用半導体装置に含まれる半導体素子から電気信号を取り出すために、半導体素子の表面電極と外部電極との間が、例えばアルミニウムワイヤ等の配線で接続される。また、最近では、配線抵抗を低減するために、ワイヤの代わりに板状のリードが配線に用いられている。更に、筐体となる封止樹脂との密着性を向上させるために、リードに粗面処理を施した構造も提案されている（例えば、特許文献１参照）。
特開２００２−１５１５５４号公報 In order to take out an electric signal from a semiconductor element included in the power semiconductor device, the surface electrode and the external electrode of the semiconductor element are connected by a wiring such as an aluminum wire. Recently, in order to reduce wiring resistance, plate-like leads are used for wiring instead of wires. Furthermore, a structure in which the lead is subjected to a rough surface treatment in order to improve the adhesion with the sealing resin as a housing has been proposed (see, for example, Patent Document 1).
JP 2002-151554 A

しかしながら、板状のリード配線を用いた場合、封止樹脂がリード配線の下方に回り込みにくく、封止樹脂の未充填領域ができるという問題があった。かかる未充填領域は、封止樹脂の剥離の起点や絶縁不良の原因となり、電力用半導体装置の信頼性を低下させていた。特に、薄型化した電力用半導体装置において、未充填領域の発生が顕著であった。
また、リード配線は、ワイヤ配線に比較して幅が広いため、半導体素子の接合状態等を目視等で検査する場合にじゃまになり、検査工程が煩雑になるという問題もあった。 However, when the plate-like lead wiring is used, there is a problem in that the sealing resin does not easily enter the lower part of the lead wiring and an unfilled region of the sealing resin is formed. Such an unfilled region causes a starting point of peeling of the sealing resin and a cause of insulation failure, and reduces the reliability of the power semiconductor device. In particular, in the thinned power semiconductor device, the occurrence of unfilled regions was significant.
In addition, since the lead wiring is wider than the wire wiring, there is a problem that the inspection process becomes complicated because it is a hindrance when visually inspecting the bonding state of the semiconductor element or the like.

そこで、本発明は、半導体素子と外部電極とがリード配線で接続された半導体装置において、封止樹脂の未充填領域の発生を防ぎ、かつ試験工程が容易な半導体装置の提供を目的とする。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device in which a semiconductor element and an external electrode are connected by a lead wiring to prevent an unfilled region of a sealing resin from occurring and an easy test process.

本発明は、表面と裏面とを備えた半導体基板と、表面に設けられた第１電極と、裏面に設けられた第２電極と、表面に設けられ、第１電極と第２電極との間の電流を制御する制御電極とを備えた半導体素子と、半導体素子の第１電極に接続された接合部と、接合部から半導体素子の表面と略平行に延びた配線部とを備えたリードと、少なくとも半導体素子とリードを埋込む絶縁樹脂からなる筐体とを含む半導体装置であって、リードが配線部に貫通孔を有し、貫通孔の内部に絶縁樹脂が充填されていることを特徴とする半導体装置である。   The present invention provides a semiconductor substrate having a front surface and a back surface, a first electrode provided on the front surface, a second electrode provided on the back surface, and a surface provided between the first electrode and the second electrode. A semiconductor element comprising a control electrode for controlling the current of the semiconductor element, a junction connected to the first electrode of the semiconductor element, and a lead comprising a wiring part extending substantially parallel to the surface of the semiconductor element from the junction A semiconductor device including at least a semiconductor element and a housing made of an insulating resin that embeds the lead, wherein the lead has a through hole in the wiring portion, and the through hole is filled with the insulating resin. This is a semiconductor device.

以上のように、本発明にかかる半導体装置では、リードに設けられた貫通孔を通って封止樹脂が充填できるため、特に薄型の半導体装置においても完全な樹脂封止が可能となる。また、貫通孔を通して目視等による検査が可能となり、検査工程が簡略化できる。   As described above, in the semiconductor device according to the present invention, since the sealing resin can be filled through the through hole provided in the lead, complete resin sealing is possible even in a particularly thin semiconductor device. Moreover, inspection by visual inspection or the like can be performed through the through hole, and the inspection process can be simplified.

以下に、図面を参照しながら、本発明の好適な実施の形態について説明する。なお、以下の説明では、「上」、「下」、「左」、「右」およびこれらの用語を含む名称を適宜使用するが、これらの方向は図面を参照した発明の理解を容易にするために用いるものであり、実施形態を上下反転、あるいは任意の方向に回転した形態も、当然に本願発明の技術的範囲に含まれる。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the following description, “top”, “bottom”, “left”, “right” and names including these terms are used as appropriate, but these directions facilitate understanding of the invention with reference to the drawings. Therefore, a mode in which the embodiment is inverted upside down or rotated in an arbitrary direction is naturally included in the technical scope of the present invention.

実施の形態１．
図１は、全体が１００で表される、本発明の実施の形態１にかかる電力用半導体装置の斜視図であり、図２は、図１をＩ−Ｉ方向に見た場合の断面図である。図１において、理解が容易となるように、樹脂筐体等を省略してある。 Embodiment 1 FIG.
FIG. 1 is a perspective view of a power semiconductor device according to a first embodiment of the present invention, represented as a whole by 100, and FIG. 2 is a cross-sectional view of FIG. 1 viewed in the II direction. is there. In FIG. 1, the resin casing and the like are omitted for easy understanding.

電力用半導体装置１００は、放熱ブロック１を含む。放熱ブロック１は、電気伝導率、熱伝導率の高いものが好ましく、例えば厚さ３ｍｍの銅板からなる。放熱ブロック１の上には、ＩＧＢＴ２の第２主電極であるコレクタ電極（図示せず）およびＦＷＤｉ（フリーホイールダイオード）３の裏面電極がはんだ４によって、電気的かつ機械的に接続されている。ＩＧＢＴ２は、例えば厚さが０．２５ｍｍ、縦横の長さがそれぞれ１２ｍｍであり、ＦＷＤｉ３は、例えば厚さが０．２５ｍｍ、縦の長さが１３．５ｍｍ、横の長さが１２ｍｍである。また、はんだ４には、例えば厚さが０．１５ｍｍのＳｎ−Ａｇ−Ｃｕ系はんだが用いられる。
放熱ブロック１は、ＩＧＢＴ２およびＦＷＤｉ３の放熱手段と、両素子の裏面側の配線との双方を兼ねる。 The power semiconductor device 100 includes a heat dissipation block 1. The heat dissipating block 1 preferably has a high electric conductivity and high heat conductivity, and is made of, for example, a copper plate having a thickness of 3 mm. On the heat dissipation block 1, a collector electrode (not shown), which is a second main electrode of the IGBT 2, and a back electrode of the FWDi (free wheel diode) 3 are electrically and mechanically connected by solder 4. For example, the IGBT 2 has a thickness of 0.25 mm and a vertical and horizontal length of 12 mm, respectively. The FWDi 3 has a thickness of 0.25 mm, a vertical length of 13.5 mm, and a horizontal length of 12 mm, for example. As the solder 4, for example, Sn-Ag-Cu solder having a thickness of 0.15 mm is used.
The heat dissipating block 1 serves as both the heat dissipating means of the IGBT 2 and FWDi 3 and the wiring on the back side of both elements.

ＩＧＢＴ２の第１主電極であるエミッタ電極（図示せず）およびＦＷＤｉ３の表面電極には、例えば厚さ０．３ｍｍ、幅１０ｍｍのＣｕからなるリード５が、はんだ４を用いて接合されている。具体的には、ＩＧＢＴ２およびＦＷＤｉ３の表面には、はんだ接合性の良好な金属膜として、最表面からＡｕ／Ｎｉ／Ｍｏ／Ａｌの積層金属膜（図示せず）が蒸着により形成されており、この金属膜上にリード５が接合される。
リード５は、ＩＧＢＴ２との接合部５Ａ、ＦＷＤｉ３との接合部５Ｂ、および段差部５Ｅを介して接合部５Ａ、５Ｂに接続された配線部５Ｃ、５Ｄを有する。段差部５Ｅの高さは０．３ｍｍで、リード５を折り曲げて形成されている。接合部５Ａ、５ＢとＩＧＢＴ２およびＦＷＤｉ３の電極とは、それぞれ電気的に接続されている。はんだ４には、例えば厚さが０．１ｍｍのＳｎ−Ａｇ−Ｃｕ系はんだが用いられる。接合部５Ａ、５Ｂと配線部５Ｃ、５Ｄは、略平行となっている。 For example, a lead 5 made of Cu having a thickness of 0.3 mm and a width of 10 mm is joined to the emitter electrode (not shown) which is the first main electrode of the IGBT 2 and the surface electrode of the FWDi 3 by using the solder 4. Specifically, a multilayer metal film (not shown) of Au / Ni / Mo / Al is formed by vapor deposition from the outermost surface as a metal film having good solderability on the surfaces of IGBT2 and FWDi3, Leads 5 are bonded onto the metal film.
The lead 5 has a joint part 5A with the IGBT 2, a joint part 5B with the FWDi3, and wiring parts 5C and 5D connected to the joint parts 5A and 5B through the step part 5E. The step portion 5E has a height of 0.3 mm and is formed by bending the lead 5. Junction parts 5A and 5B and the electrodes of IGBT2 and FWDi3 are electrically connected to each other. For the solder 4, for example, Sn—Ag—Cu solder having a thickness of 0.1 mm is used. Junction part 5A, 5B and wiring part 5C, 5D are substantially parallel.

放熱ブロック１およびリード５は、それぞれリードフレームからなる電極端子６Ａ、６Ｂに電気的に接続されており、外部と電流の入出力が行われる。   The heat dissipating block 1 and the lead 5 are electrically connected to electrode terminals 6A and 6B made of a lead frame, respectively, and current is input / output from / to the outside.

リード５と電極端子６Ｂとは、放熱ブロック１の外側において、例えば超音波溶接などを用いて接続される。放熱ブロック１の近傍で接合する場合は、固定治具などを放熱ブロック１上に配置する必要が有り、治具の干渉や工具の取り合い等の干渉を避ける工夫が必要となる。このため、リード５と電極端子６Ｂとの接合工程が煩雑にならないように、放熱ブロック１の外側で接合するのが好ましい。   The lead 5 and the electrode terminal 6B are connected to the outside of the heat dissipation block 1 using, for example, ultrasonic welding. When joining in the vicinity of the heat radiating block 1, it is necessary to arrange a fixing jig or the like on the heat radiating block 1, and it is necessary to devise measures to avoid interference such as jig interference and tool holding. For this reason, it is preferable to join outside the heat dissipation block 1 so that the joining process of the lead 5 and the electrode terminal 6B does not become complicated.

ＩＧＢＴ２の第３の電極であるゲート電極（図示せず）と、電極端子６Ａ、６Ｂと共にリードフレームから形成された電極端子６Ｃとは、例えばアルミニウムのボンディングワイヤ７で接続されている。更に、放熱ブロック１、ＩＧＢＴ２、ＦＷＤｉ３、リード５等は、トランスファモールド法を用いて、エポキシ樹脂等の熱硬化性樹脂により樹脂封止され、樹脂筐体８が形成される。   A gate electrode (not shown) which is a third electrode of the IGBT 2 and an electrode terminal 6C formed from the lead frame together with the electrode terminals 6A and 6B are connected by an aluminum bonding wire 7, for example. Further, the heat dissipation block 1, IGBT2, FWDi3, leads 5 and the like are sealed with a thermosetting resin such as an epoxy resin using a transfer molding method, and the resin casing 8 is formed.

放熱ブロック１の裏面には、例えば、厚さが０．２ｍｍで、樹脂筐体８よりも熱伝導性に優れた、エポキシ系材料を主とする絶縁層９が固着されており、電力用半導体装置１００と、裏面に取り付けられる放熱フィン（図示せず）などとの絶縁を保つ構造となっている。
なお、樹脂封止後にリードフレームが切断され、それぞれの電極端子６Ａ、６Ｂ、６Ｃの樹脂筐体８から露出した部分が、外部端子となる。 On the back surface of the heat dissipation block 1, for example, an insulating layer 9 mainly made of an epoxy material having a thickness of 0.2 mm and superior in thermal conductivity to the resin casing 8 is fixed. The structure is such that insulation is maintained between the device 100 and a radiating fin (not shown) attached to the back surface.
Note that the lead frame is cut after resin sealing, and the portions of the electrode terminals 6A, 6B, 6C exposed from the resin casing 8 serve as external terminals.

リード５の接合部５Ａ、５Ｂの間の配線部５Ｃ、および接合部５Ｂと電極端子６Ｂとの接続部の間には直径が略２ｍｍの円形の貫通孔１０が設けられている。
このように、本実施の形態１にかかる電力用半導体装置１００では、放熱ブロック１と対向する位置にあるリード５に、貫通孔１０が設けられている。 A circular through hole 10 having a diameter of approximately 2 mm is provided between the wiring portion 5C between the joint portions 5A and 5B of the lead 5 and between the joint portion between the joint portion 5B and the electrode terminal 6B.
As described above, in the power semiconductor device 100 according to the first exemplary embodiment, the through hole 10 is provided in the lead 5 at a position facing the heat dissipation block 1.

貫通孔を有しないリードを用いた場合、放熱ブロック１とリード５の間には略０．８ｍｍの間隙が設けられ、ＩＧＢＴ２およびＦＷＤｉ３の表面とリード５（折り曲げ部）の間には略０．４ｍｍの間隙が設けられる。放熱ブロック１とリード５は互いに電気的に絶縁されている必要がある。この場合、空気のみでは空間絶縁距離が不足するため、この空間に絶縁樹脂を充填することが必要となる。また、ＩＧＢＴ２、ＦＷＤｉ３の外周部もおいて、それぞれの素子の表裏の沿面絶縁距離を確保するために、絶縁樹脂が充填されることが必要である。   When a lead having no through hole is used, a gap of approximately 0.8 mm is provided between the heat dissipation block 1 and the lead 5, and approximately 0. 0 is provided between the surface of the IGBT 2 and FWDi 3 and the lead 5 (bending portion). A 4 mm gap is provided. The heat dissipation block 1 and the lead 5 must be electrically insulated from each other. In this case, since the space insulating distance is insufficient with only air, it is necessary to fill this space with an insulating resin. Moreover, in order to ensure the creeping insulation distance between the front and back surfaces of the respective elements in the outer peripheral portions of the IGBT2 and FWDi3, it is necessary to be filled with an insulating resin.

しかしながら、リード５の幅が例えば１０ｍｍの場合には、リード５の横側から中央部までの距離は５ｍｍと長くなる。また、樹脂が充填される領域の、放熱ブロック１とリード５との間隔は、上述のように０．８ｍｍや、０．４ｍｍである。このため、特に、高さが０．４ｍｍの領域には樹脂が充填されにくく、およそ１０％の確率で未充填領域が残るという問題があった。   However, when the width of the lead 5 is, for example, 10 mm, the distance from the side of the lead 5 to the center is as long as 5 mm. Moreover, the space | interval of the thermal radiation block 1 and the lead | read | reed 5 of the area | region with which resin is filled is 0.8 mm and 0.4 mm as mentioned above. For this reason, in particular, there is a problem that an area having a height of 0.4 mm is hardly filled with resin, and an unfilled area remains with a probability of approximately 10%.

これに対して、樹脂の流入距離を短くしたり高さを大きくすることが、未充填領域をなくすためには効果的であるため、リード５の幅を小さくすることや接合部５Ａ、５Ｂの曲げ高さを大きくすることによって樹脂の流入を容易にすることも可能である。しかしながら、かかる手段では、リード５に通電可能な電流の容量が小さくなるという問題が発生し、また、高さを大きくすると、電力用半導体装置の薄型化が困難になるという問題もあった。   On the other hand, shortening the resin inflow distance or increasing the height is effective for eliminating the unfilled region. Therefore, it is possible to reduce the width of the lead 5 and the bonding portions 5A and 5B. It is also possible to facilitate the inflow of the resin by increasing the bending height. However, this means has a problem that the capacity of the current that can be passed through the lead 5 is reduced, and if the height is increased, it is difficult to reduce the thickness of the power semiconductor device.

そこで、電力用半導体装置１００では、リード５に貫通孔１０を設けることにより、貫通孔１０を通って樹脂を充填できるようにした。この結果、ＩＧＢＴ２、ＦＷＤｉ３の外周部への樹脂の流入距離が従来の半分以下となり、特に、外周部の中央近傍では貫通孔１０からの距離を２ｍｍまで短縮することが可能となり、未充填領域の発生を著しく軽減できた。   Therefore, in the power semiconductor device 100, the lead 5 is provided with the through hole 10 so that the resin can be filled through the through hole 10. As a result, the inflow distance of the resin to the outer peripheral portion of the IGBT 2 and FWDi 3 is less than half of the conventional one, and in particular, the distance from the through hole 10 can be shortened to 2 mm near the center of the outer peripheral portion. The occurrence was significantly reduced.

以上のように、本実施の形態１にかかる電力用半導体装置１００では、トランスファモールドにおける樹脂の注入工程において、放熱ブロック１とリード５の狭隘な間隙、ＩＧＢＴ２とＦＷＤｉ３との間の更に狭隘な間隙に樹脂の未充填領域を残すことなく注入することが可能となり、絶縁特性などに悪影響を及ぼすことなく薄型パッケージを製造することが可能となる。   As described above, in the power semiconductor device 100 according to the first embodiment, in the resin injection process in the transfer mold, a narrow gap between the heat dissipation block 1 and the lead 5 and a narrower gap between the IGBT 2 and the FWDi 3. It is possible to inject without leaving an unfilled region of resin, and a thin package can be manufactured without adversely affecting the insulation characteristics.

なお、電力用半導体装置１００では、ＩＧＢＴを用いる場合について説明したが、ＩＧＢＴと同じくゲート配線を有する電力用半導体素子であるＭＯＳＦＥＴ等でも同様の効果を得ることができる。また、電力用の半導体素子のみならず、他の小電流制御用の半導体素子にも、かかる構造を適用しても構わない。   In the power semiconductor device 100, the case where the IGBT is used has been described. However, the same effect can be obtained with a MOSFET or the like which is a power semiconductor element having a gate wiring like the IGBT. Further, such a structure may be applied not only to a power semiconductor element but also to other small current control semiconductor elements.

また、本実施の形態では、はんだ４の材料としてＳｎ−Ａｇ−Ｃｕ系はんだを示したが、Ｓｎ−Ｐｂ系はんだやＡｕ−Ｓｎ系、Ａｕ−Ｓｉ系はんだ等の、半導体素子の接合に適用可能な他のはんだ材料を用いてもかまわない。また、Ａｇペーストなどの比較的熱伝導率の高い導電性接着剤を用いても良い。   In this embodiment, Sn—Ag—Cu based solder is shown as the material of the solder 4. However, it is applied to joining of semiconductor elements such as Sn—Pb based solder, Au—Sn based, Au—Si based solder. Other possible solder materials may be used. Alternatively, a conductive adhesive having a relatively high thermal conductivity such as an Ag paste may be used.

リード５の材質としてＣｕを用いたが、半導体素子の主材料であるＳｉとの熱膨張率の差を小さくするために、ＣｕとＭｏとのクラッド材料やＣｕとインバーとのクラッド材料、４２Ａｌｌｏｙやインバーなどの鉄系材料にＮｉやＳｎ等のメッキを施した材料をリード５として使用しても良い。   Although Cu was used as the material of the lead 5, in order to reduce the difference in thermal expansion coefficient from Si which is the main material of the semiconductor element, a cladding material of Cu and Mo, a cladding material of Cu and Invar, 42 Alloy, A material obtained by plating an iron-based material such as Invar with Ni or Sn may be used as the lead 5.

ＩＧＢＴ２のエミッタ電極（図示せず）上に形成する金属膜としてＡｕ／Ｎｉ／Ｍｏ／Ａｌの積層構造を用いたが、かかる積層構造の作成には、金属製のマスクパターンを用いた真空蒸着やスパッタリング、ウェハ上に有機系材料からなるレジストパターンを形成して行うＡｕ／Ｎｉ／Ａｌの無電解メッキなどを用いることができる。金属膜としては、Ｎｉ、Ａｇ、Ａｕ、Ｐｄ、Ｃｕ、はんだなどの、はんだの濡れ性の良い金属層を最表面に形成していれば良い。
なお、導電性接着剤を用いる場合には、はんだの濡れ性の良い金属膜を必ずしも最表面に形成する必要はないが、金属層の酸化によって電気抵抗が増加するため、Ａｕなどの酸化防止層を最表面に形成することが好ましい。 A Au / Ni / Mo / Al laminated structure was used as the metal film formed on the emitter electrode (not shown) of the IGBT 2. For the production of such a laminated structure, vacuum deposition using a metal mask pattern or Sputtering, Au / Ni / Al electroless plating performed by forming a resist pattern made of an organic material on the wafer, and the like can be used. As the metal film, a metal layer having good solder wettability such as Ni, Ag, Au, Pd, Cu, or solder may be formed on the outermost surface.
When a conductive adhesive is used, it is not always necessary to form a metal film with good solder wettability on the outermost surface. However, since the electrical resistance increases due to oxidation of the metal layer, an anti-oxidation layer such as Au is used. Is preferably formed on the outermost surface.

本実施の形態１では、熱封止樹脂および筐体の樹脂材料に関しては、本実施の形態１においては、熱硬化性樹脂を用いたトランスファモールド法により樹脂筐体８が形成しているが、代わりに、ＰＰＳ（ポリフェニルサルファイド）などの熱可塑性樹脂を用いたインジェクションモールド法によって形成しても構わない。   In the first embodiment, regarding the heat sealing resin and the resin material of the casing, in the first embodiment, the resin casing 8 is formed by a transfer molding method using a thermosetting resin. Instead, it may be formed by an injection molding method using a thermoplastic resin such as PPS (polyphenyl sulfide).

本実施の形態１では、放熱ブロック１の裏面にはエポキシ系の絶縁層９が固着され、リード５および引き出し電極部５Ａは樹脂筐体８によって封止された形状となっている。このように、放熱ブロック１やリード５、引き出し電極５Ａを外部表面に対して絶縁構造とすることで、例えば、数百ボルトから数キロボルトの絶縁耐圧が求められる、複数の電力用半導体装置１００を近接配置したシステムにおいても、絶縁を必要とする部分の沿面距離を小さくすることができる。これにより、例えば、冷却フィンの小型化が可能となり、システム全体の小型化、軽量化、低コスト化が可能となる。   In the first embodiment, an epoxy insulating layer 9 is fixed to the back surface of the heat dissipation block 1, and the lead 5 and the extraction electrode portion 5 </ b> A are sealed by the resin casing 8. As described above, by providing the heat dissipation block 1, the lead 5, and the extraction electrode 5 </ b> A with an insulating structure with respect to the external surface, for example, a plurality of power semiconductor devices 100 that are required to have a withstand voltage of several hundred volts to several kilovolts are provided. Even in a system arranged close to each other, it is possible to reduce the creepage distance of a portion requiring insulation. As a result, for example, the cooling fins can be reduced in size, and the entire system can be reduced in size, weight, and cost.

なお、電力用半導体装置１００で選択される材料や半導体素子は、以下で述べる他の実施の形態２〜５にも適用することができる。ここで、半導体素子は、表面と裏面とを備えた半導体基板と、表面に設けられた第１電極と、裏面に設けられた第２電極と、表面に設けられ、第１電極と第２電極との間の電流を制御する制御電極とを備えた素子をいうものとする。   The materials and semiconductor elements selected in power semiconductor device 100 can also be applied to other second to fifth embodiments described below. Here, the semiconductor element includes a semiconductor substrate having a front surface and a back surface, a first electrode provided on the front surface, a second electrode provided on the back surface, and a first electrode and a second electrode provided on the surface. And a control electrode for controlling the current between the two.

実施の形態２．
図３は、全体を２００で表される、本発明の実施の形態２にかかる電力用半導体装置の断面図である。図３中、図１と同一符合は、同一又は相当箇所を示す。
電力用半導体装置２００では、ＩＧＢＴ２およびＦＷＤｉ３が、はんだ４を用いて絶縁基板１１に電気的、機械的に接続されている。絶縁基板１１は、ＡｌＮ（窒化アルミ）板と、その両面に固着された、厚さが０．２５ｍｍのＣｕの配線パターン１１Ｂからなる。ＩＧＢＴ２およびＦＷＤｉ３は、配線パターンに１１Ｂに電気的に接続されている。 Embodiment 2. FIG.
FIG. 3 is a cross-sectional view of the power semiconductor device according to the second embodiment of the present invention, indicated as a whole by 200. 3, the same reference numerals as those in FIG. 1 denote the same or corresponding parts.
In the power semiconductor device 200, the IGBT 2 and FWDi 3 are electrically and mechanically connected to the insulating substrate 11 using the solder 4. The insulating substrate 11 is composed of an AlN (aluminum nitride) plate and a Cu wiring pattern 11B having a thickness of 0.25 mm fixed to both sides thereof. IGBT2 and FWDi3 are electrically connected to the wiring pattern 11B.

絶縁基板１１の裏面には、厚さ０．２５ｍｍのはんだ４によって、厚さ３ｍｍのＣｕからなるベース板１２が接合されている。
更に、ベース板１２の外周には、接着剤（図示せず）を用いて、ＰＰＳ（ポリフェニルサルファイド）樹脂を用いたケース１３が接着され、筐体の一部を形成している A base plate 12 made of Cu having a thickness of 3 mm is joined to the back surface of the insulating substrate 11 by a solder 4 having a thickness of 0.25 mm.
Further, a case 13 using PPS (polyphenyl sulfide) resin is bonded to the outer periphery of the base plate 12 using an adhesive (not shown) to form a part of the housing.

ＩＧＢＴ２およびＦＷＤｉ３の表面にはリード５の接合部５Ａ、５Ｂがはんだ４により接合されている。   Joined portions 5A and 5B of leads 5 are joined to the surfaces of IGBT2 and FWDi3 by solder 4.

ケース１３には、外部電極６Ａ、６Ｂ、６Ｃがインサート成型により取り付けられており、リード５や絶縁基板１１の配線パターン１１Ｂとは、例えば超音波溶接により接合される。また、ＩＧＢＴ２のゲート電極とは、アルミニウムワイヤ７により電気的に接続される。   External electrodes 6A, 6B, 6C are attached to the case 13 by insert molding, and are joined to the leads 5 and the wiring pattern 11B of the insulating substrate 11 by, for example, ultrasonic welding. The gate electrode of the IGBT 2 is electrically connected by an aluminum wire 7.

また、接合部５Ａと接合部５Ｂの間の配線部５Ｃと、および接合部５Ｂと外部電極６Ｂとの間の部分に、貫通孔１０が設けられている。   Moreover, the through-hole 10 is provided in the wiring part 5C between the joining part 5A and the joining part 5B, and the part between the joining part 5B and the external electrode 6B.

ケース１３内には、内部の絶縁を確保するためにシリコーンゲル１４が充填され、約１２５℃でキュアされる。更に、シリコーンゲル１４を覆うように蓋部１５が設けられる。   The case 13 is filled with silicone gel 14 to ensure internal insulation and cured at about 125 ° C. Furthermore, a lid 15 is provided so as to cover the silicone gel 14.

シリコーンゲル１４がケース１３内に充填される際に、リード５の下方には、リード５に設けられた貫通孔１０からもシリコーンゲル１４が注入される。この結果、リード５の下方において、シリコーンゲル１４の未充填領域の発生が防止でき、絶縁信頼性の高い電力用半導体装置２００を得ることができる。   When the silicone gel 14 is filled in the case 13, the silicone gel 14 is also injected below the lead 5 from the through hole 10 provided in the lead 5. As a result, the generation of an unfilled region of the silicone gel 14 under the lead 5 can be prevented, and the power semiconductor device 200 with high insulation reliability can be obtained.

また、シリコーンゲル１４を、真空注入、真空脱泡する場合にも、貫通孔１０からの注入、脱泡が可能となり、シリコーンゲル１４の未充填領域の発生を防止できる。   Further, even when the silicone gel 14 is vacuum-injected or vacuum-degassed, the injection and degassing from the through hole 10 can be performed, and the generation of an unfilled region of the silicone gel 14 can be prevented.

このため、リード５の曲げ高さ（段差部の高さ）を小さくすることができ、薄型の電力用半導体装置２００を提供することが可能となる。   For this reason, the bending height (height of the stepped portion) of the lead 5 can be reduced, and a thin power semiconductor device 200 can be provided.

実施の形態３．
図４は、全体が３００で表される、本発明の実施の形態３にかかる電力用半導体装置の斜視図である。図４中、図１と同一符号は同一または相当箇所を示す。また、図４において、理解が容易となるように、樹脂筐体等を省略してある。 Embodiment 3 FIG.
FIG. 4 is a perspective view of the power semiconductor device according to the third embodiment of the present invention, indicated as a whole by 300. 4, the same reference numerals as those in FIG. 1 denote the same or corresponding parts. Further, in FIG. 4, the resin casing and the like are omitted for easy understanding.

電力用半導体装置３００では、リード５の配線部５Ｃが、ＩＧＢＴ２等の半導体素子の表面（または放熱ブロック１の表面）に対して略平行に配置された板状体となっている。配線部５Ｃの両側から接合部５Ａ、５Ｂが延び、その一部が段差部を兼ねるとともに、先端においてＩＧＢＴ２等と接合されている。段差の高さは１ｍｍであり、接合部５Ａ、５Ｂは、配線部５Ｃから両側に延びて、Ｕ字形に折り返されて段差部を形成し、その先がＩＧＢＴ２等と接合されている。配線部５Ｃの両側から延びた接合部５Ａは、互いにその先端がＩＧＢＴ２の上で向き合うようになっている。   In the power semiconductor device 300, the wiring portion 5 </ b> C of the lead 5 is a plate-like body that is disposed substantially parallel to the surface of the semiconductor element such as the IGBT 2 (or the surface of the heat dissipation block 1). The joint portions 5A and 5B extend from both sides of the wiring portion 5C. A part of the joint portions 5A and 5B also serves as a step portion, and is joined to the IGBT 2 and the like at the tip. The height of the step is 1 mm, and the joint portions 5A and 5B extend from the wiring portion 5C to both sides, are folded back in a U shape to form a step portion, and the tip is joined to the IGBT 2 or the like. The joint portions 5A extending from both sides of the wiring portion 5C have their tips facing each other on the IGBT 2.

ＩＧＢＴ２およびＦＷＤｉ３との接合部５Ａ、５Ｂの上方の配線部５Ｃには、それぞれリード５の配線方向の長さが５ｍｍで、最大幅が２ｍｍの楕円形の貫通孔１０Ａが設けられている。
また、ＩＧＢＴ２とＦＷＤｉ３とに挟まれた冷却ブロック１上の配線部５Ｃ、およびＦＷＤｉ３より外方の配線部５Ｃには、直径が略２ｍｍの略円形の貫通孔１０が設けられている。 In the wiring portion 5C above the joint portions 5A and 5B to the IGBT 2 and FWDi3, an elliptical through hole 10A having a length in the wiring direction of the lead 5 of 5 mm and a maximum width of 2 mm is provided.
Further, a substantially circular through hole 10 having a diameter of approximately 2 mm is provided in the wiring portion 5C on the cooling block 1 sandwiched between the IGBT 2 and the FWDi3 and the wiring portion 5C outside the FWDi3.

図５には示していないが、冷却ブロック１やＩＧＢＴ２等は、図２に示したように、トランスファモールド法を用いて、絶縁樹脂からなる樹脂状態で封止される。   Although not shown in FIG. 5, the cooling block 1, the IGBT 2, and the like are sealed in a resin state made of an insulating resin by using a transfer mold method as shown in FIG. 2.

本実施の形態にかかる電力用半導体装置３００では、リード５に貫通孔１０Ａを設けることにより、リード５の下方において封止樹脂の未充填領域の発生を防止できるとともに、ＩＧＢＴ２等の半導体素子の周辺部でリード５と封止樹脂との密着性を向上させることができる。   In the power semiconductor device 300 according to the present embodiment, by providing the lead 5 with the through hole 10A, generation of an unfilled region of the sealing resin under the lead 5 can be prevented, and the periphery of the semiconductor element such as the IGBT 2 can be prevented. This can improve the adhesion between the lead 5 and the sealing resin.

また、ＩＧＢＴ２とＦＷＤｉ３の間や、ＦＷＤｉ３とリードフレームにて形成される外部電極５Ｃとの間にも貫通孔１０を設けることにより、更に、放熱ブロック１とリード５との間隙への樹脂の充填が容易となる。   Further, by providing a through hole 10 between the IGBT 2 and the FWDi 3 or between the FWDi 3 and the external electrode 5C formed by the lead frame, the resin is filled in the gap between the heat dissipation block 1 and the lead 5. Becomes easy.

加えて、ＩＧＢＴ２やＦＷＤｉ３との接合部５Ａ、５Ｂが、両側から互いに向き合うように形成され、その上方のリード５に貫通孔１０Ａを設けることにより、接合部５Ａ、５Ｂのはんだフィレットの状態などを目視等で検査することが容易となり、リード５の接合状態の検査工程を短時間で、簡単に行うことができる。   In addition, the joints 5A and 5B to the IGBT 2 and FWDi 3 are formed so as to face each other from both sides, and by providing a through hole 10A in the lead 5 thereabove, the state of the solder fillet of the joints 5A and 5B, etc. Inspection by visual inspection or the like becomes easy, and the inspection process of the bonding state of the lead 5 can be easily performed in a short time.

更に、電力用半導体装置の熱特性を評価する場合においても、貫通孔の無い構造では、ＩＧＢＴ２表面、ＦＷＤｉ３表面の温度実測は、予め熱電対を取り付けた熱特性を測定するためのサンプルを別途作成する必要があったが、貫通孔１０、１０Ａを設けることによってサーモグラフィを用いた測定が可能となり、別途測定用サンプルを作製する必要がなくなった。また、測定誤差の少ない正確な温度測定が可能となった。   Furthermore, even when evaluating the thermal characteristics of power semiconductor devices, in the case of a structure without through-holes, the temperature measurement of the IGBT2 surface and FWDi3 surface is separately prepared for measuring the thermal characteristics with a thermocouple attached in advance. However, by providing the through holes 10 and 10A, the measurement using the thermography becomes possible, and it is not necessary to separately prepare a measurement sample. In addition, accurate temperature measurement with little measurement error is possible.

実施の形態４．
図５は、全体が４００で表される、本発明の実施の形態４にかかる電力用半導体装置の斜視図である。図５中、図１と同一符号は同一または相当箇所を示す。また、図５において、理解が容易となるように、樹脂筐体等を省略してある。 Embodiment 4 FIG.
FIG. 5 is a perspective view of the power semiconductor device according to the fourth embodiment of the present invention, indicated as a whole by 400. In FIG. 5, the same reference numerals as those in FIG. 1 denote the same or corresponding parts. Further, in FIG. 5, a resin casing or the like is omitted for easy understanding.

電力用半導体装置４００では、ＩＧＢＴ２およびＦＷＤｉ３との接合部５Ａ、５Ｂの上方のリード５（配線部５Ｃ）には、それぞれ直径が２ｍｍの円形の貫通孔１０が、配線方向に２つずつ形成されている。他の構造は、上述の電力用半導体装置３００と同様である。   In the power semiconductor device 400, two circular through holes 10 each having a diameter of 2 mm are formed in the wiring direction in the leads 5 (wiring portions 5C) above the joint portions 5A and 5B with the IGBT 2 and the FWDi 3, respectively. ing. Other structures are the same as those of the power semiconductor device 300 described above.

かかる電力用半導体装置４００では、リード５の機械的剛性、電気伝導面積を著しく減少させることなく、リード５および接合部５Ａ、５Ｂとの狭隘な間隙への封止樹脂の充填が容易となる。また、ＩＧＢＴ２やＦＷＤｉ３表面のはんだ４の外観検査や、電力用半導体装置の熱特性評価を容易に行うことができる。   In such a power semiconductor device 400, the sealing resin can be easily filled into a narrow gap between the lead 5 and the joints 5A and 5B without significantly reducing the mechanical rigidity and the electric conduction area of the lead 5. Further, the appearance inspection of the solder 4 on the surface of the IGBT 2 or the FWDi 3 and the thermal characteristic evaluation of the power semiconductor device can be easily performed.

なお、図６は、電力用半導体装置４００に用いることができる、他のリード５の斜視図である。図６では、リード５の接合部５Ａ、５Ｂが、配線部５Ｃとは別部材から形成されている。リード５の配線部５Ｃと接合部５Ａ、５Ｂとは、例えば、ろう付けや溶接などにより接続される。   FIG. 6 is a perspective view of another lead 5 that can be used in the power semiconductor device 400. In FIG. 6, the joint portions 5A and 5B of the lead 5 are formed from members different from the wiring portion 5C. The wiring portion 5C of the lead 5 and the joint portions 5A and 5B are connected by, for example, brazing or welding.

図６に示すようなリード５では、リード５の厚さを１．０ｍｍ、接合部５Ａ、５Ｂの厚さを０．３ｍｍとし、両者の厚さに差異を設けたり、接合部５Ａ、５Ｂを、リード５の材料と比べて熱膨張率の小さい材料から形成したりすることができる。これにより、接合部５Ａ、５ＢとＩＧＢＴ２、ＦＷＤｉ３とを接続する例えばはんだ４の熱応力による破壊を抑制することが可能となり、より信頼性の高く、環境変化の影響を受けにくい電力用半導体装置を得ることが可能となる。   In the lead 5 as shown in FIG. 6, the thickness of the lead 5 is 1.0 mm and the thickness of the joint portions 5A and 5B is 0.3 mm. The lead 5 can be made of a material having a smaller coefficient of thermal expansion than the material of the lead 5. As a result, it is possible to suppress breakage due to thermal stress of, for example, the solder 4 that connects the joints 5A and 5B and the IGBTs 2 and FWDi3. Can be obtained.

実施の形態５．
図７は、本発明の実施の形態５にかかる電力用半導体装置に用いるリードの展開図であり、図８は、図７のリードを用いた、全体が５００で表される電力用半導体装置の斜視図である。図７、８中、図１と同一符号は同一または相当箇所を示す。また、図８において、理解が容易となるように、樹脂筐体等を省略してある。 Embodiment 5 FIG.
FIG. 7 is a developed view of leads used in the power semiconductor device according to the fifth embodiment of the present invention. FIG. 8 is a diagram of a power semiconductor device represented by 500 as a whole using the leads in FIG. It is a perspective view. 7 and 8, the same reference numerals as those in FIG. 1 denote the same or corresponding parts. Further, in FIG. 8, a resin casing or the like is omitted for easy understanding.

電力用半導体装置５００では、リード５のＩＧＢＴ２およびＦＷＤｉ３との接合部５Ａ、５Ｂがそれぞれ櫛歯状になっており、それぞれＵ字形に折り曲げられてＩＧＢＴ２等に接合されている。
ＩＧＢＴ２、ＦＷＤｉ３と接合された接合部５Ａ、５Ｂの上方に位置するリード５（配線部５Ｃ）には貫通孔１０Ａが設けられている。また、ＩＧＢＴ２とＦＷＤｉ３との間の、冷却ブロック１の上方に位置するリード５（配線部５Ｃ）には、貫通孔１０Ａより開口面積の小さい貫通孔１０が設けられている。 In the power semiconductor device 500, the joint portions 5A and 5B of the lead 5 with the IGBT 2 and FWDi 3 are comb-shaped, respectively, bent into a U shape, and joined to the IGBT 2 or the like.
A through hole 10A is provided in the lead 5 (wiring part 5C) located above the joints 5A and 5B joined to the IGBT2 and FWDi3. Further, the lead 5 (wiring part 5C) located above the cooling block 1 between the IGBT 2 and the FWDi 3 is provided with a through hole 10 having an opening area smaller than the through hole 10A.

かかる電力用半導体装置５００では、半導体素子であるＩＧＢＴ２やＦＷＤｉ３とリード５の接合部５Ａ、５Ｂとの接合面積が小さくなる。この結果、電力用半導体装置全体に温度サイクルが付加された場合に、はんだ４にかかる熱応力が小さくなり、破損等が防止できる。   In such a power semiconductor device 500, the junction area between the semiconductor element IGBT2 or FWDi3 and the joints 5A and 5B of the lead 5 is reduced. As a result, when a temperature cycle is applied to the entire power semiconductor device, the thermal stress applied to the solder 4 is reduced, and damage or the like can be prevented.

また、接合部５Ａ、５Ｂでは、はんだ量のばらつきにより一部が未接合となる可能性が有り、何らかの形での検査が必要となる。リード５に貫通孔１０Ａを形成することにより、ＩＧＢＴ２およびＦＷＤｉ３との接合部がそれぞれの半導体素子の直上から目視等で確認でき、検査工程の簡略化が可能となる。   In addition, the joint portions 5A and 5B may be partially unjoined due to variations in the amount of solder, and some form of inspection is required. By forming the through hole 10A in the lead 5, the joint between the IGBT 2 and the FWDi 3 can be visually confirmed from directly above the respective semiconductor elements, and the inspection process can be simplified.

特に、図７の展開図を示したように、それぞれ櫛歯状に分割された接合部を折り曲げた場合に、その直上に貫通孔１０Ａが位置するような構成とすることが好ましい。   In particular, as shown in the development view of FIG. 7, it is preferable that the through-hole 10 </ b> A is positioned immediately above the joint portions that are divided into comb teeth.

なお、冷却ブロック１の上方に位置するリード５（配線部５Ｃ）設けられた貫通孔１０は、樹脂を充填する際に未充填領域を残さないために形成されたものであり、貫通穴１０Ａに比べて面積が小さくても構わない。   The through hole 10 provided in the lead 5 (wiring part 5C) located above the cooling block 1 is formed so as not to leave an unfilled region when filling with resin, and is formed in the through hole 10A. The area may be smaller than that.

本発明の実施の形態１にかかる電力用半導体装置の斜視図である。1 is a perspective view of a power semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態１にかかる電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power concerning Embodiment 1 of this invention. 本発明の実施の形態２にかかる電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power concerning Embodiment 2 of this invention. 本発明の実施の形態３にかかる電力用半導体装置の斜視図である。It is a perspective view of the semiconductor device for electric power concerning Embodiment 3 of this invention. 本発明の実施の形態４にかかる電力用半導体装置の斜視図である。It is a perspective view of the semiconductor device for electric power concerning Embodiment 4 of this invention. 本発明の実施の形態４にかかる電力用半導体装置に用いられるリードの概略図である。It is the schematic of the lead | read | reed used for the power semiconductor device concerning Embodiment 4 of this invention. 本発明の実施の形態５にかかる電力用半導体装置に用いられるリードの展開図である。It is an expanded view of the lead | read | reed used for the power semiconductor device concerning Embodiment 5 of this invention. 本発明の実施の形態５にかかる電力用半導体装置の斜視図である。It is a perspective view of the semiconductor device for electric power concerning Embodiment 5 of this invention.

符号の説明Explanation of symbols

１ 放熱ブロック、２ ＩＧＢＴ、３ ＦＷＤｉ、４ はんだ、５ リード、６Ａ、６Ｂ、６Ｃ 外部端子、７ アルミニウムワイヤ、８ 樹脂筐体、９ 絶縁層、１０、１０Ａ 貫通孔、１００ 電力用半導体装置。

DESCRIPTION OF SYMBOLS 1 Heat radiation block, 2 IGBT, 3 FWDi, 4 Solder, 5 Lead, 6A, 6B, 6C External terminal, 7 Aluminum wire, 8 Resin housing | casing, 9 Insulating layer 10, 10A Through-hole, 100 Semiconductor device for electric power.

Claims (4)

表面と裏面とを備えた半導体基板と、該表面に設けられた第１電極と、該裏面に設けられた第２電極と、該表面に設けられ、該第１電極と該第２電極との間の電流を制御する制御電極とを備えた第１の半導体素子と、
少なくとも表面電極と裏面電極とを備えた第２の半導体素子と、
該第１の半導体素子の該第１電極に接続された接合部と、該第２の半導体素子の該表面電極に接続された接合部と、該接合部から半導体素子の表面と略平行に延びた配線部とを備えたリードと、
該第１の半導体素子の該第２電極と、該第２の半導体素子の該裏面電極とが固着された主表面を有する配線パターンと、
少なくとも該第１の半導体素子と、該第２の半導体素子と、該リードとを埋込む絶縁樹脂を有する筐体とを備えた半導体装置であって、
該リードは、該配線パターンの主表面と対向する領域内に貫通孔を有し、該貫通孔の内部に該絶縁樹脂が充填されていることを特徴とする半導体装置。 A semiconductor substrate having a front surface and a back surface, a first electrode provided on the front surface, a second electrode provided on the back surface, a first electrode provided on the front surface, and the first electrode and the second electrode A first semiconductor element comprising a control electrode for controlling the current between;
A second semiconductor element comprising at least a front electrode and a back electrode;
A junction connected to the first electrode of the first semiconductor element; a junction connected to the surface electrode of the second semiconductor element; and extending substantially parallel to the surface of the semiconductor element from the junction. A lead having a wiring portion,
A wiring pattern having a main surface to which the second electrode of the first semiconductor element and the back electrode of the second semiconductor element are fixed;
A semiconductor device comprising at least the first semiconductor element, the second semiconductor element, and a housing having an insulating resin that embeds the lead,
The lead has a through hole in a region facing the main surface of the wiring pattern, and the insulating resin is filled in the through hole. 上記配線部が、上記半導体素子の表面に対して略平行でありかつ該表面を覆うように、段差部を介して上記接合部に接続されていることを特徴とする請求項１に記載の半導体装置。   2. The semiconductor according to claim 1, wherein the wiring part is connected to the junction part through a step part so as to be substantially parallel to and cover the surface of the semiconductor element. apparatus. 上記配線部の該配線部を挟んで対向する位置に、上記接合部が接続され、該配線部と該接合部とが対向する部分には上記絶縁樹脂が充填されていることを特徴とする請求項２に記載の半導体装置。   The bonding portion is connected to a position of the wiring portion facing each other with the wiring portion interposed therebetween, and a portion where the wiring portion and the bonding portion face each other is filled with the insulating resin. Item 3. The semiconductor device according to Item 2. 上記配線部の貫通孔が、更に、上記半導体素子の表面を覆っている部分にも形成され、接合部もしくは接合する接合材の一部を覆うように設けられていることを特徴とする請求項２または３に記載の半導体装置。 Claims through-hole of the wiring portion, further, also in the portion that covers the surface of the upper Symbol semiconductor element is formed, characterized in that is provided so as to cover a part of the joint or the joining material for joining Item 4. The semiconductor device according to Item 2 or 3.
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