JP4496736B2 - Display device - Google Patents

Description

  The present invention relates to a display device, such as an organic EL (Electroluminescence) display, which performs a predetermined process on an input image and displays it on a display unit.

In an image display device, such as a liquid crystal display, an image is displayed by arranging a large number of pixels in a matrix and controlling the light intensity for each pixel in accordance with image information to be displayed.
This is the same for an organic EL display or the like, but the organic EL display is a so-called self-luminous display having a light emitting element in each pixel circuit, and has a higher image visibility than a liquid crystal display. There are advantages such as unnecessary and high response speed.
Further, the brightness of each light emitting element is controlled by the value of the current flowing therethrough, that is, it is greatly different from a liquid crystal display or the like in that the light emitting element is a current control type.

  In the organic EL display, as with the liquid crystal display, a simple matrix method and an active matrix method can be used. However, although the former has a simple structure, it is difficult to realize a large and high-definition display. There's a problem. For this reason, active matrix systems have been actively developed in which the current flowing through the light emitting elements inside each pixel is controlled by active elements (typically TFTs: thin film transistors) provided inside the pixels.

  FIG. 10 is a circuit diagram showing a first configuration example of a pixel circuit in an active matrix organic EL display (see, for example, Patent Documents 1 and 2).

The pixel circuit 10 in FIG. 10 includes a p-channel thin film field effect transistor (hereinafter referred to as TFT) 11, an n-channel TFT 12, a capacitor C 11, and an organic EL element (OLED) 13 that is a light emitting element. In FIG. 10, DTL indicates a data line, and WSL indicates a scanning line.
Since organic EL elements often have rectifying properties, they are sometimes referred to as OLEDs (Organic Light Emitting Diodes). In FIG. 10 and others, the symbol of a diode is used as a light-emitting element. It does not require rectification.
In FIG. 10, the source of the TFT 11 is connected to the power supply potential VCC, and the cathode (cathode) of the light emitting element 13 is connected to the ground potential GND. The operation of the pixel circuit 10 in FIG. 10 is as follows.

  When the scanning line WSL is in a selected state (here, at a high level) and the write potential Vdata is applied to the data line DTL, the TFT 12 becomes conductive and the capacitor C11 is charged or discharged, and the gate potential of the TFT 11 becomes VDATA.

  When the scanning line is in a non-selected state (here, low level), the data line DTL and the TFT 11 are electrically disconnected, but the gate potential of the TFT 11 is stably held by the capacitor C11.

The current flowing through the TFT 11 and the light emitting element 13 has a value corresponding to the gate-source voltage Vgs of the TFT 11, and the light emitting element 13 continues to emit light with a luminance corresponding to the current value.
The operation of selecting the scanning line WSL and transmitting the luminance information given to the data line to the inside of the pixel as described above is hereinafter referred to as “writing”.
As described above, in the pixel circuit 10 of FIG. 4, once VDATA is written, the light emitting element 13 continues to emit light with a constant luminance until it is rewritten next time.

  FIG. 11 is a circuit diagram showing a second configuration example of the pixel circuit in the active matrix organic EL display.

A pixel circuit 20 in FIG. 11 includes p-channel TFTs 21 and 22, n-channel TFTs 23 and 24, a capacitor C21, and an organic EL element OLED 25 that is a light emitting element. In FIG. 11, DTL indicates a data line, WSL indicates a scanning line, and ESL indicates an erase line.
The operation of the pixel circuit 20 will be described below with reference to the timing chart shown in FIG.

  First, in the state (period) <1>, as shown in FIGS. 12C and 12D, the scanning signal WS applied to the scanning line WSL and the erase signal ES applied to the erase line ESL are set to the high level. The As a result, the TFTs 24 and 23 are turned on and the TFT 22 is turned off, and the electric charge corresponding to the amount of data VDATA is charged to the capacitor C21 from the data line DTL.

  In state (period) <2>, as shown in FIGS. 12C and 12D, the scanning signal WS to the scanning line WSL and the erasing signal ES to the erasing line ESL are set to a low level. As a result, the TFTs 24 and 23 are turned off and the TFT 22 is turned off, and a current corresponding to the electric charge charged in the capacitor C21 flows to the EL light emitting element 25 through the TFT 21. This current is maintained until the signal ES applied to the erase line ESL becomes high level.

  In state (period) <3>, as shown in FIG. 12D, the erase signal ES to the erase line ESL is set to a high level. As a result, the TFT 23 and TFT 22 are turned on, so that the charge charged in the capacitor C21 is discharged through the TFT 23 and TFT 22, and the light emission of the EL light emitting element 25 is turned off there.

  Thus, in the circuit of FIG. 11, each pixel uses one erase line ESL to uniquely control the light emission period (DUTY) of the light emitting element 25.

By the way, it is generally known that a light emitting element in an organic EL display has a characteristic of deteriorating in proportion to the amount of light emission and time, and improvement of the characteristic of the light emitting element is expected.
On the other hand, since the display screen of the display is not always uniform, the deterioration of the light emitting elements in the screen is not uniform, which causes the light emitting elements to partially deteriorate.
In particular, in the display of a watch or the like, since only that portion is extremely deteriorated and a decrease in luminance is seen, it is generally called “burn-in”. (Hereafter, partial pixel deterioration is expressed as “burn-in”)
In addition, when a plurality of types of light-emitting elements are used or when a single light-emitting element has a plurality of emission wavelength components, there are many cases where the respective deterioration characteristics do not match.
In this case, in the deteriorated pixel portion, the white balance is shifted and it appears to be colored.
An increase in temperature can also be cited as a factor that accelerates deterioration.
Although self-heating has been reduced from the past due to an increase in the luminous efficiency of materials, in principle, the loss of heat energy does not become zero, so countermeasures against heat generation are also required.

It has been considered that the image burn-in caused by the deterioration of the display element with respect to the light emission time is most preferably suppressed by improving the light emission lifetime of the display element material.
Other than improving the material, conventionally, in order to prevent burn-in, a circuit that actively discharges the storage capacitor of the pixel (for example, see Patent Document 3) is used. Reduces unnecessary light emission time and prevents burn-in.
In addition, a device for reducing the burn-in by devising how to use a screen saver or the like has been proposed (for example, see Patent Document 4).
USP 5,684,365 JP-A-8-234683 JP 2002-169509 A JP 2002-207475 A

However, by improving the light emission lifetime of the display element material, in principle, it is impossible to eliminate burn-in completely in the self-luminous display, no matter how much the light emission lifetime of the display element material is extended. In some cases, only a video signal that is likely to be burned in is input as a video signal displayed on the display device. In other words, burn-in cannot be prevented simply by improving the life of conventional materials.
Also, unless the life of the material is extended, the screen burn-in is not improved, and it can only depend on the development of the field such as the speed and cost of material development.

  The circuit that positively discharges the storage capacitor of the pixel described in Patent Document 3 and the circuit described in Patent Document 4 compensate for the burn-in, that is, the deterioration of the light emission luminance due to the deterioration of the pixel to the extent that it can be practically used. And cannot be mitigated.

  This invention is made | formed in view of this situation, The objective is to provide the display apparatus which can suppress the partial deterioration of the light emitting element of a pixel.

In order to achieve the above object, a first aspect of the present invention is two-dimensionally arranged with an image processing unit that executes a gamma conversion process for converting a gradation of an input image signal into an output gradation, each of which is arranged a plurality of pixel circuits including a self-luminous type light emitting element which generates heat when emitting light according to a drive signal, based on the driving signal corresponding to the output tone value of the image signal after the gamma conversion process acquiring a display panel unit corresponding to the plurality of the light emitting device is driven, the temperature information for the plurality of divided portions obtained by dividing a two-dimensional shape of the arrangement region of the plurality of light emitting elements in the display panel unit into a plurality of regions a temperature information acquisition means for, possess the temperature information, and a high-temperature generator specifying unit for specifying a divide position in which a temperature rises due to heat generation of the plurality of divided portions obtained by the temperature information acquisition unit ,Up The image processing unit changes the gamma conversion processing and outputs the image signal to be output to the display panel unit when the high temperature generating unit specifying unit specifies a divided portion where the temperature is increased due to heat generation. Decrease the gradation value.

Preferably, the temperature information acquisition means includes an in-panel temperature detection unit that detects a temperature in the display panel unit, and each of the temperature information of the plurality of divided portions and a temperature detected by the in-panel temperature detection unit, The temperature rise data for each of the divided portions obtained from the above is output to the high temperature generating portion specifying portion, and the high temperature generating portion specifying portion indicates the temperature increase indicating the temperature difference between the temperature of each of the divided portions and the temperature in the panel. Based on the data, the division location where the temperature has risen due to the heat generation may be specified.

Preferably, the temperature information acquisition means has a plurality of film type resistance thermometers arranged in a matrix on the back surface of the display device, and based on detection values of the plurality of film type resistance thermometers. The temperature information for the plurality of division points may be acquired.

Preferably, the temperature information acquisition means includes a plurality of temperature detection transistors provided in part or all of the plurality of pixel circuits, and the plurality of temperature detection transistors are based on detection values of the plurality of temperature detection transistors. You may acquire the temperature information about a division location.

According to the present invention, the temperature information acquisition unit detects the heat generation point information and the temperature information of the display panel unit in which the light emitting element is arranged.
Then, for example, temperature rise data is obtained by comparison with room temperature information. This temperature rise data is output to the high temperature generating part specifying part.
Based on the temperature rise data obtained by the temperature information acquisition means in the high temperature generation unit specifying unit, for example, by linking with the horizontal and vertical timings of the input signal, which part of the input signal in one screen (one field) It is specified whether a temperature rise has occurred.
In the image processing unit, the level of an image signal (video signal) to be input to the display panel unit is adjusted (lowered) based on information from the high temperature generating unit specifying unit, and is input to the display panel unit.

  According to the present invention, there is an advantage that the temperature rise of the panel portion can be suppressed and the partial deterioration of the light emitting element of the pixel can be suppressed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a block configuration diagram showing an embodiment of a display device according to the present invention.

(First embodiment)
The display device 30 is, for example, an active matrix organic EL display. As shown in FIG. 1, the display device 30 includes a display panel unit 31, a panel internal temperature distribution information detection unit 32, an input signal high temperature generation unit specifying unit 33, and an image. A processing unit 34 is included.

As shown in FIG. 2, the display panel unit 31 includes pixel circuits 300 including organic EL light-emitting elements that are self-luminous light-emitting elements that generate heat according to the image signal level, arranged in an m × n matrix. ing. Then, image data (video signal) whose level is adjusted by the image processing unit 34 is written from the data lines DTL1 to DRTLn while sequentially selecting the scanning lines SCNL1 to SCNLm.
In FIG. 2, the data lines DTL1 to DTLn are driven by a data line driving circuit (DTLDRV) 301, and the scanning lines SCNL1 to SCNLm are driven by a scanning line driving circuit (SCNDRV).
Further, the pixel circuit 300 is configured by the circuit of FIG. 10, FIG. 11, another circuit, or the like.

The panel internal temperature distribution information detection unit 32 includes a plurality of temperature detection units that detect a temperature rise inside the display panel 31, detects the temperature distribution inside the display panel unit 31 regardless of the display image, and displays the detection result. It outputs to the high temperature generation | occurrence | production part specific | specification part 33.
As shown in FIG. 3, the panel internal temperature distribution information detection unit 32 is a plurality of film-type resistance thermometers that detect the temperature of the heat generation point information and its temperature information by pasting it in a matrix on the back of the display panel unit 31. Body 321H, 321V, horizontal direction temperature information detection unit terminal 322, vertical direction temperature information detection terminal 323, panel internal temperature distribution information collection unit 324, and room temperature information detection unit 325 are provided.

That is, in the first embodiment, n film-type platinum resistance thermometers 321 are arranged in a matrix on the back surface of the display panel unit 31 both horizontally and vertically.
At this time, the temperature sensing element for detecting the temperature does not have to be platinum as long as it has general thermistor characteristics, but the film type platinum resistance thermometer is also used in view of its shape and electrical characteristics. The body is desirable.
The resistors 321V and 321H are connected to the power supply Vcc and the detection terminals 322 and 323, respectively, and the connection on the detection terminal side is connected to the panel internal temperature distribution information detection unit 32.

The panel internal temperature distribution information collecting unit 324 converts current data from the resistance temperature detector into voltage data, and further converts the voltage data into digital data.
Digital data can be controlled simply with a 1-bit ON / OFF signal, but in order to realize control without a sense of incongruity, it is desirable to use multi-bit data.
Further, in order to obtain room temperature information, a room temperature information detection unit 325 made of a resistance thermometer is disposed inside the display panel unit 31 and at a place other than the pixel portion.

  The panel internal temperature distribution information collection unit 324 compares the converted digital data with the normal temperature information by the normal temperature information detection unit 325 converted in the same manner, obtains temperature rise data, and outputs it to the high temperature generation unit identification unit 33.

The high temperature generating unit specifying unit 33 links the input signal within one screen (one field) by linking with the horizontal and vertical timing of the input signal based on the temperature rise data obtained by the panel internal temperature distribution information collecting unit 324. It is specified which part causes the temperature rise, and the specified information is output to the image processing unit 34.
As shown in FIGS. 8A and 8B, the high-temperature generating unit specifying unit 33 outputs information for changing the gamma characteristic and lowering the input level to the image processing unit 34 and inputting the information to the display panel unit 31. An instruction is given to lower the level of the signal (video signal) to suppress the emission luminance of the EL light emitting element.
In this case, the gamma characteristic can be varied by selecting a gamma table according to the temperature data level. However, an IC for varying gamma by dividing one screen into areas based on temperature information in the panel surface. It is possible to control more finely by using.

  Next, the operation according to the above configuration will be described.

  In the panel internal temperature distribution information detection unit 32, the heat generation point information and its temperature information are detected by a plurality of film type resistance thermometers 321H and 321V attached to the back surface of the display panel unit 31 in a matrix. Then, the detection data of all the resistance temperature detectors 321H and 321V are supplied to the panel internal temperature distribution information collection unit 324 via the horizontal direction temperature information detection unit terminal 322 and the vertical direction temperature information detection terminal 323.

In panel internal temperature distribution information collection unit 324, current data from the resistance temperature detector is converted into voltage data, and the voltage data is converted into digital data.
In the panel internal temperature distribution information collection unit 324, the converted digital data is compared with the normal temperature information from the converted normal temperature information detection unit 325, and temperature rise data is obtained. This temperature rise data is output to the high temperature generation part specifying part 33.

In the high temperature generation unit specifying unit 33, the input signal in one screen (one field) is linked with the horizontal and vertical timings of the input signal based on the temperature rise data obtained by the panel internal temperature distribution information collecting unit 324. It is specified which part causes the temperature rise. Information for changing the gamma characteristic and lowering the input level is supplied from the high temperature generating unit specifying unit 33 to the image processing unit 34.
In the image processing unit 34, the level of an image signal (video signal) to be input to the display panel unit 31 is adjusted (lowered) based on information from the high temperature generation unit specifying unit 33 and input to the display panel unit 31. Is done.
In the display panel unit 31, the pixel circuits 300 arranged in an m × n matrix have their levels adjusted by the image processing unit 34 from the data lines DTL 1 to DRTLn while sequentially selecting the scanning lines SCNL 1 to SCNLm. Image data (video signal) is written.

  As described above, according to the first embodiment, the plurality of film-type resistance thermometers 321H and 321V attached to the back surface of the display panel 31 in a matrix form generate heat generation point information and its temperature information. The panel internal temperature distribution information detection 32 that obtains temperature rise data by comparing the detected temperature with the room temperature information, and the horizontal of the input signal based on the temperature rise data obtained by the panel internal temperature distribution information detection unit 32 By linking with the vertical timing, it is possible to identify which part of the input signal in one screen (one field) is causing the temperature rise, change the gamma characteristic, and output information that lowers the input level. The level of the image signal (video signal) input to the display panel unit 31 is adjusted based on information from the part specifying part 33 and the high temperature generating part specifying part 33 (lower) Te), since it has an image processing unit 34 to be inputted to the display panel unit 31, it is possible to obtain the following effects.

That is, as shown in FIGS. 4A and 4B, the temperature increase can be suppressed and the partial deterioration of the pixel can be suppressed by changing the gamma characteristic by the image processing of the high temperature generator 33.
Partial pixel deterioration due to fixed display such as a clock displayed on a screen such as a television (TV) can be suppressed.
In addition, by detecting the panel temperature, it is recognized that the fixed display pattern on the high gradation side is included in the input signal, and the case where γ correction is performed for each frame and γ conversion is performed is limited. Thus, there is an advantage that burn-in prevention can be realized while suppressing the uncomfortable feeling of image quality as much as possible.
In addition, it is possible to suppress partial pixel deterioration when there are many fixed images such as a personal computer (PC) or a television (TV).
Further, when a pixel power supply and a ground potential are short-circuited for some reason, it can function as a protection circuit that prevents a human body from being burned or fired due to a local high temperature.

(Second Embodiment)
The second embodiment is different from the first embodiment described above in that the temperature detection unit of the panel internal temperature distribution report detection unit 32A is for acquiring temperature information similar to a TFT (thin film transistor) used in the pixel circuit 300. The TFT is arranged for each pixel circuit 300A, and the temperature information acquisition TFT is led out of the panel by, for example, a temperature detection line TDTL wired for each column of the matrix.

As in the first embodiment, when the temperature measuring elements are pasted on the back surface of the display panel in a matrix, the number is naturally limited, and it is difficult to obtain detailed location information.
On the other hand, by using TFTs (thin film transistors), it is possible to detect the same number of pixels as the maximum.
Further, finer detection is possible by detecting the temperature at the part closest to the light emitting element that generates heat.

5 to 8 show specific circuit examples of the temperature detection unit of the panel internal temperature distribution information detection unit 32A according to the second embodiment.
FIGS. 5 to 8 show examples in which the connection methods of the temperature detection transistors are different, and the basic operation principle is the same as the case shown below.

The pixel circuits 300 </ b> A to 300 </ b> D in FIGS. 5 to 8 include a TFT 311 as a driving transistor, a TFT 312 as a switch, a pixel capacitor 313, and an EL light emitting element 314.
A TFT 311 and a light emitting element 314 are connected in series between the supply line of the power supply voltage V _CC and the ground GND.
The source and drain of the TFT 312 are connected to the gate of the TFT 311 and the data line DTL, and the gate of the TFT 312 is connected to the scanning line SCNL. A capacitor 313 is connected between the gate of the TFT 311 and the ground GND.
In the pixel circuit 300A of FIG. 5, a TFT 315 as a temperature detection transistor is connected between a connection point of the supply line of the power supply voltage V _CC , the TFT 311 and the detection line TDTL, and the gate of the TFT 315 is connected to the ground GND. ing.
In the pixel circuit 300B of FIG. 6, the gate of the TFT 315 as the temperature detection transistor is connected to the detection line TDTL instead of the ground GND.
In the pixel circuit 300C of FIG. 7, the TFT 315 is connected between the ground and the connection point of the capacitor 313 and the detection line TFTL, and the gate of the TFT 315 is connected to the supply line of the power supply voltage V _CC and the connection point of the TFT 311. Yes.
In the pixel circuit 300C of FIG. 8, the gate of the TFT 315 as a temperature detection transistor is connected not to the connection point between the supply line of the power supply voltage V _CC and the TFT 311 but to the connection point between the ground and the capacitor 313. ing.

The operation of the pixel circuit 300A in FIG. 5 will be described below.
In a normal pixel driving state, the TFT 312 is turned on by the input image data and the scanning line selection data, and the EL element 314 emits light by the TFT 311 which is a pixel driving transistor.
Here, the power source of the TFT 311 as a driving transistor is connected to the TFT 315 which is a temperature detection transistor having a temperature characteristic at the GND potential.
The TFT 315 that is a temperature detection transistor is in an OFF state at room temperature, but the leakage current IL increases when the temperature rises.
By taking scan line selection data as a trigger for this leakage current IL, it becomes possible to detect partial temperature information in the screen and to specify the detailed location of the input signal that causes a temperature rise. .
Subsequent processing is performed in the same manner as in the first embodiment.

FIG. 9 shows the flow of the temperature distribution detection processing system in the case of the circuit of FIG.
Since this process is performed in the same manner as in the first embodiment except that the temperature detection is performed by the TFT, a detailed description thereof is omitted here.

According to the second embodiment, the same effects as those of the first embodiment described above can be obtained.
That is, partial pixel deterioration due to fixed display of a clock or the like displayed on a screen of a television (TV) or the like can be suppressed.
In addition, by limiting the cases where γ conversion is performed, there is an advantage that it is possible to realize image sticking prevention that suppresses a sense of discomfort in image quality as much as possible.
In addition, it is possible to suppress partial pixel deterioration when there are many fixed images such as a personal computer (PC) or a television (TV).
Further, when a pixel power supply and a ground potential are short-circuited for some reason, the pixel can function as a protection circuit that prevents a burn or fire to a human body due to a local high temperature.
According to the second embodiment, it is possible to detect the same number of pixels as the maximum by configuring the temperature detection unit with TFTs (thin film transistors).
In addition, there is an advantage that finer detection is possible by detecting the temperature at the portion closest to the light emitting element that generates heat.

  Since partial pixel deterioration due to fixed display of a clock or the like displayed on a television screen or the like can be suppressed, it can be applied to a flat panel display such as an organic EL display.

1 is a block configuration diagram showing an embodiment of an image processing apparatus according to the present invention. It is a figure which shows the structural example of the display panel part which concerns on this embodiment. It is a figure which shows the structural example of the panel internal temperature distribution information detection part which concerns on the 1st embodiment. It is explanatory drawing about the gamma conversion process which concerns on this embodiment. It is a figure which shows the 1st example of the pixel circuit containing the temperature detection transistor which concerns on 2nd Embodiment. It is a figure which shows the 2nd example of the pixel circuit containing the temperature detection transistor which concerns on 2nd Embodiment. It is a figure which shows the 3rd example of the pixel circuit containing the temperature detection transistor which concerns on 2nd Embodiment. It is a figure which shows the 4th example of the pixel circuit containing the temperature detection transistor which concerns on 2nd Embodiment. It is a figure which shows the flow of the processing system of temperature distribution detection in the case of the circuit of FIG. It is a circuit diagram which shows the 1st structural example of the pixel circuit in an active matrix type organic EL display. It is a circuit diagram which shows the 2nd structural example of the pixel circuit in an active matrix type organic electroluminescent display. 12 is a timing chart for explaining the operation of the circuit of FIG. 11.

Explanation of symbols

DESCRIPTION OF SYMBOLS 30 ... Display apparatus, 31 ... Display panel part, 32 ... Panel internal temperature distribution information detection part, 33 ... High temperature generation part specific | specification part of an input signal, 34 ... Image processing part, 300,300A-300D ... Pixel circuit, 311 ... Drive Transistor TFT, 312... Switch TFT, 313. Pixel capacitance, 314. EL light emitting element, 315.

Claims (4)

An image processing unit for executing a gamma conversion process for converting the gradation of the input image signal into an output gradation;
Disposed two-dimensionally, each of which is arranged a plurality of pixel circuits including a self-luminous type light emitting element which generates heat when emitting in response to the driving signal, the output tone value of the image signal after the gamma conversion process A display panel unit on which a plurality of corresponding light emitting elements are driven based on a drive signal according to
Temperature information acquisition means for acquiring temperature information about a plurality of divided portions obtained by dividing the two-dimensional arrangement region of the plurality of light emitting elements in the display panel unit into a plurality of regions ;
From the temperature information of the plurality of divided portions obtained by the temperature information acquisition means, have a high temperature generator specifying unit for specifying a divide position in which a temperature rises due to heat generation,
The image processing unit
When the high temperature generating unit specifying unit specifies a divided portion where the temperature is increased due to heat generation, the gamma conversion process is changed to lower the output tone value of the image signal output to the display panel unit Display device. The temperature information acquisition means is
A panel temperature detector for detecting the temperature in the display panel,
Output temperature rise data for each of the divided points obtained from each of the temperature information of the plurality of divided points and the temperature detected by the in-panel temperature detection unit to the high temperature generation unit specifying unit,
The high temperature generating part specifying part is
The display device according to claim 1 , wherein the divided portion in which the temperature is increased by the heat generation is specified based on the temperature increase data indicating a temperature difference between the temperature of each of the divided portions and the temperature in the panel . The temperature information acquisition means is
A plurality of film-type resistance thermometers arranged in a matrix on the back of the display device,
It said plurality of based on the detection value of the film-type resistance thermometer, the display device according to claim 1, wherein acquiring the temperature information about the plurality of divided portions. The temperature information acquisition means is
A plurality of temperature detection transistors provided in part or all of the plurality of pixel circuits;
Based on the detected value of the plurality of temperature-sensing transistor, a display device according to claim 1, wherein acquiring the temperature information about the plurality of divided portions.

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