JP4484035B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4484035B2 JP4484035B2 JP2004112045A JP2004112045A JP4484035B2 JP 4484035 B2 JP4484035 B2 JP 4484035B2 JP 2004112045 A JP2004112045 A JP 2004112045A JP 2004112045 A JP2004112045 A JP 2004112045A JP 4484035 B2 JP4484035 B2 JP 4484035B2
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Description
前記半導体モジュールに、複数の電気的接続部を有する第2の配線パターンを、前記絶縁部上を通るように形成すること、及び、その後、
複数の第2のパッドを有する第2の半導体チップを、それぞれの前記第2のパッドがいずれかの前記電気的接続部と対向するように配置して、前記第2のパッドと前記第2の配線パターンとを電気的に接続することを含む。本発明によると、インターポーザ等の積層用基板を利用することなく半導体チップを積層することができる。そのため、半導体装置を効率よく製造することができる。
(2)この半導体装置の製造方法において、
前記第1の半導体チップは、前記第1のパッドが形成された面とは反対側の面が前記ベース基板と対向するように搭載されていてもよい。
(3)この半導体装置の製造方法において、
前記第1の半導体チップは、前記第1のパッドが形成された面が前記ベース基板に対向するように搭載されていてもよい。
(4)この半導体装置の製造方法において、
前記第2の配線パターンを、前記第1の配線パターンと電気的に接続するように形成してもよい。
(5)この半導体装置の製造方法において、
前記第2の配線パターンを、前記第1の配線パターンと電気的に接続しないように形成してもよい。
(6)本発明に係る半導体装置の製造方法は、(a)ベース基板と、複数の第1のパッドを有し前記ベース基板に搭載された第1の半導体チップと、前記第1のパッドと電気的に接続された第1の配線パターンと、を有する半導体モジュールを用意すること、
(b)前記半導体モジュールに、複数の第2のパッドを有する第2の半導体チップを搭載すること、
(c)前記第1及び第2の半導体チップの少なくとも一方の側方に絶縁部を形成すること、
(d)第2の配線パターンを、前記絶縁部上を通るように形成すること、及び、
(e)前記第2のパッドと前記第2の配線パターンとを電気的に接続すること、
を含み、
前記(b)及び(d)工程を別々に行う。本発明によると、インターポーザ等の積層用基板を利用することなく半導体チップを積層することができる。そのため、半導体装置を効率よく製造することができる。
(7)この半導体装置の製造方法において、
前記第2の配線パターンを、導電性微粒子を含有する溶剤を利用して形成してもよい。
(8)本発明に係る半導体装置は、ベース基板と、複数の第1のパッドを有し前記ベース基板に搭載された第1の半導体チップと、前記第1のパッドと電気的に接続された第1の配線パターンと、前記第1の半導体チップの側方に形成された絶縁部とを有する半導体モジュールと、
複数の電気的接続部を有し、前記絶縁部上を通るように形成された第2の配線パターンと、
複数の第2のパッドを有し、それぞれの前記第2のパッドがいずれかの前記電気的接続部と対向して電気的に接続されてなる第2の半導体チップと、
を含む。本発明によると、半導体チップは、インターポーザ等の積層用基板を利用することなく積層されている。そのため、厚みが薄く、実装性に優れた半導体装置を提供することができる。
(9)本発明に係る電子機器は、上記半導体装置を有する。
図1〜図3は、本発明を適用した第1の実施の形態に係る半導体装置の製造方法を説明するための図である。本実施の形態に係る半導体装置の製造方法は、図1に示す、半導体モジュール100を用意することを含む。半導体モジュール100は、ベース基板10を有する。ベース基板10の材料や構造は特に限定されず、既に公知となっているいずれかの基板を利用してもよい。ベース基板10は、フレキシブル基板であってもよく、リジッド基板であってもよい。ベース基板10は、積層型の基板であってもよく、あるいは、単層の基板であってもよい。ベース基板10は、内部に、図示しない配線パターンを有していてもよい。また、ベース基板10の外形も特に限定されるものではない。
以下、本発明を適用した第2の実施の形態に係る半導体装置の製造方法を説明する。なお、本実施の形態でも、既に説明した内容を可能な限り適用するものとする。図6〜図8は、本発明を適用した第2の実施の形態に係る半導体装置の製造方法を説明するための図である。
図9〜図11は、本発明を適用した第2の実施の形態の変形例に係る半導体装置の製造方法を説明するための図である。本変形例に係る半導体装置の製造方法は、半導体モジュール300を用意することを含む。半導体モジュール300は、絶縁部85を有する。絶縁部85は、第1の半導体チップ30の側方に形成されてなる。絶縁部85は、第1の絶縁部82と第2の絶縁部86とを含んでいてもよい。図9に示すように、第2の絶縁部86は、第1の配線パターン90の一部を露出させるように形成されていてもよい。
以下、本発明を適用した第3の実施の形態に係る半導体装置の製造方法を説明する。なお、本実施の形態でも、既に説明した内容を可能な限り適用するものとする。図12〜図15は、本発明を適用した第3の実施の形態に係る半導体装置の製造方法を説明するための図である。
Claims (3)
- ベース基板と、前記ベース基板と反対側の面に第1のパッドが配置されるように前記ベース基板に搭載された第1の半導体チップと、を有する半導体モジュールを用意すること、
前記第1の半導体チップの側方に第1の絶縁部を形成すること、
前記第1のパッドと電気的に接続する第1の配線パターンを、前記第1の絶縁部上に、導電性微粒子を含有する溶剤を利用して形成すること、
前記第1の配線パターンを覆うように第2の絶縁部を形成すること、
電気的接続部を有する第2の配線パターンを、前記第2の絶縁部上に、導電性微粒子を含有する溶剤を利用して形成すること、
第2のパッドを有する第2の半導体チップを、前記第2のパッドが前記電気的接続部と対向するように搭載すること、
を含み、
前記第1の絶縁部、第2の絶縁部、前記第1の配線パターン、及び前記第2の配線パターンを形成することは、別々に行われる、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第2の配線パターンを、前記第1の配線パターンと電気的に接続するように形成する半導体装置の製造方法。 - 請求項1または請求項2に記載の半導体装置の製造方法において、
前記第2の配線パターンを、前記第1の配線パターンと電気的に接続しないように形成する半導体装置の製造方法。
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