JP4474892B2 - Flip chip type LED - Google Patents

Description

  The present invention relates to flip-chip type optical semiconductor elements that can be used as various light emitting elements such as various indicators and printer heads of optical printers, and light receiving elements such as solar cells. The present invention relates to a high-brightness flip-chip type optical semiconductor device that has very few short circuits.

  There is a flip chip type optical semiconductor element in which an LED chip electrode is directly conductively fixed on an electrode of a driving substrate by Ag paste or solder. Such an LED chip does not require the use of a wire for electrical conduction, and a relatively small LED chip can be mounted by a relatively simple process.

  A schematic cross-sectional view of such a flip-chip type optical semiconductor element is shown in FIG. FIG. 4 shows an LED chip in which an n-type nitride semiconductor and a p-type nitride semiconductor are formed on a sapphire substrate 404 via a buffer layer 405. In order to conduct from the semiconductor surface side, a part of the semiconductor is removed to expose the surfaces of the p-type and n-type nitride semiconductors. A p-type electrode 411 and an n-type electrode 412 are formed on the surfaces of the p-type and n-type nitride semiconductors, respectively. Therefore, the p-type electrode 411 and the n-type electrode 412 are formed on the same plane side.

The LED chip is preliminarily coated with an Ag paste or the like on the electrode pattern of the driving substrate, and then the LED chip is arranged with the electrode surface facing down. By curing the Ag paste, it is possible to fix the LED chip and to establish conduction between the electrode of the driving substrate and each electrode of the LED chip.
JP-A-9-199787

  One LED chip may be as small as 350 μm or less, and an electrode on the LED chip may be as small as about 100 μm on one side. In this case, it is difficult to accurately arrange the LED chip using a die-bonding device. Further, in the above-described flip chip type optical semiconductor element, semiconductor junctions having different polarities may be exposed on the same surface side. For this reason, when the electrode of the LED chip and the electrode pattern of the driving substrate are connected via Ag paste or the like, the Ag paste may short-circuit between the semiconductor junctions due to the displacement of the LED chip. In addition, the Ag paste crawls up to the semiconductor junction due to the viscosity of the Ag paste and the surface tension with the LED chip surface, and the semiconductor junction may be short-circuited in the same manner. A short circuit causes not only a decrease in light emission luminance but also destruction of the light emitting element. Such a short circuit can be controlled to some extent by forming a protective film 401 such as silicon oxide except for the electrode surface.

  However, it is not sufficient at the present time when an optical semiconductor device with a smaller size and a higher yield is required, and further improvement is required. In particular, when an insulating film is formed, the number of short-circuits is reduced, but a flip-chip type optical semiconductor element having a sufficient yield cannot be obtained. Accordingly, an object of the present invention is to provide a flip-chip type optical semiconductor device capable of emitting light with high brightness with fewer short circuits.

The present invention has a protective film in which positive and negative electrodes are provided on the same plane side of a nitride semiconductor formed on a translucent insulating substrate, and the nitride semiconductor layer surface is covered except for an exposed portion of the electrode surface. It is a flip chip type LED . In particular, the protective film has at least a three-layer structure of a first layer made of an insulating film, a metal layer on the first layer, and a second layer made of an insulating film on the metal layer, and further nitrided on the substrate. The protective film is formed on the substrate surface exposed from the physical semiconductor.

  As a result, an insulating coating can be formed at a semiconductor junction or the like with good controllability, and there can be very little short circuit even when the flip chip type optical semiconductor element is electrically connected. That is, by forming a metal layer (including an alloy), it is possible to prevent the conductive member constituting the conductive paste from entering through the insulating coating and to prevent a short circuit. In addition, a light receiving element that can efficiently emit the emission wavelength emitted from the light emitting element to the outside, or can efficiently absorb light from the outside into the semiconductor can be provided.

  According to a second aspect of the present invention, the first layer and / or the second layer is at least one selected from silicon oxide, titanium oxide, niobium oxide, hafnium oxide, aluminum oxide, zirconium oxide, silicon nitride, and polyimide. It is. Thereby, a more reliable flip-chip type optical semiconductor element can be obtained.

According to a third aspect of the present invention, in the flip-chip LED according to the first or second aspect, the first layer is an inorganic insulating film, and the second layer is an organic insulating film.
According to a fourth aspect of the present invention, there is provided the flip-chip type LED according to any one of the first to third aspects, wherein the metal layer is divided into a plurality of shapes.
According to a fifth aspect of the present invention, there is provided the flip chip type LED according to any one of the first to fourth aspects, wherein the metal layer is formed as a positive electrode.
According to a sixth aspect of the present invention, the LED is a flip-chip type LED according to any one of the first to fifth aspects, in which an electrode is connected to a drive substrate.

  The present invention relates to a flip chip type optical semiconductor device using a nitride semiconductor on a sapphire substrate, and in particular, improves the light emission luminance by covering a semiconductor junction provided in the optical semiconductor device with a protective film having at least three layers. At the same time, a flip-chip type optical semiconductor element with few short circuits can be obtained.

  As a result of various experiments, the present inventor has found that a highly reliable flip-chip type optical semiconductor element can be obtained by making the coating film covering the nitride semiconductor element into a specific structure, thereby achieving the present invention.

  That is, it is considered that the inorganic insulating film is difficult to form a dense and defect-free thin film, and short-circuited by a conductive adhesive used for electrical connection of the flip chip type optical semiconductor element. More specifically, a conductive member such as Ag constituting the conductive adhesive is ionized by moisture in the surrounding environment. The ionized metal may migrate in the inorganic insulating film and cause a short circuit when energized with the nitride semiconductor. In addition to the deterioration of the function of the semiconductor due to the short circuit, the semiconductor element may be destroyed. In particular, a short circuit at the semiconductor junction is considered to have a particularly large effect on the nitride semiconductor element. The present invention can prevent a short circuit formed in a semiconductor junction or the like through an insulating member by adopting a protective film structure in which a metal film is sandwiched between insulating films. Such a problem is not only a light emitting element but also a light receiving element.

  Hereinafter, a specific embodiment example of the present invention will be described with reference to FIG. In FIG. 1, after an n-type nitride semiconductor and a p-type nitride semiconductor are formed on a sapphire substrate 104, the p-type nitride semiconductor is partially etched and exposed to the surface of the n-type nitride semiconductor layer. Let After electrodes 110, 111, and 112 are formed on the p-type and n-type nitride semiconductors, silicon oxide is formed on the entire surface by plasma CVD. A part of the electrode surface was exposed by etching using silicon oxide as a mask to form an insulating film as the first layer 101. Next, platinum is deposited by a sputtering method, and the metal layer 102 is formed on the first layer. Further, in the same manner as the first layer 101, silicon oxide was formed as an insulating second layer 103 by plasma CVD to form a protective film having a three-layer structure. The electrode of the formed flip-chip type optical semiconductor element and the electrode pattern of the drive circuit board were electrically connected using a Cu-containing epoxy resin. When a current is supplied from the drive circuit, the LED chip emits light. In addition to the light from the LED chip that is directly transmitted through the sapphire and extracted to the outside, there is the light that is reflected by the metal layer forming the protective film and extracted from the sapphire. Therefore, the emission wavelength from the LED chip can be emitted with high efficiency. Hereafter, each structure of this invention is explained in full detail.

(Protective film)
The protective film of the present invention includes at least a first layer 101 made of an insulating film, a metal layer 102, and a second layer made of an insulating film 103. In particular, the protective film prevents at least the semiconductor junction of the optical semiconductor element from being contacted with a conductive paste or solder used when the flip chip type optical semiconductor element is conducted. Accordingly, each layer preferably has the following characteristics.

(First layer 101, 201, 301)
Since the first layer can be formed in contact with the nitride semiconductor, a layer having good adhesion to the nitride semiconductor is preferable. In addition, an insulating film with high insulating properties is preferable in order to form the metal layer 102 over the first layer 101. The first layer 101 can efficiently reflect the wavelength emitted by the light emitting element, or can efficiently reflect the wavelength received by the light receiving element, thereby increasing the light utilization efficiency. Specifically, the reflectance can be improved by setting the thickness of the first layer 101 to ¼ times the light emission wavelength of the light emitting element and the light receiving wavelength of the light receiving element. In addition, when the emission wavelength emitted from the light emitting element is reflected by the metal layer 102, the first layer 101 is transparent to at least the emission wavelength emitted from the light emitting element and the light receiving wavelength received by the light receiving element. A high layer is preferable.

  Examples of the material used for the first layer 101 include metal oxides and metal nitrides such as silicon oxide, titanium oxide, niobium oxide, hafnium oxide, aluminum oxide, zirconium oxide, and silicon nitride, and resins such as polyimide. Are preferable. When the first layer 101 is an inorganic insulating film, it can be formed with good controllability even in a small optical semiconductor element by utilizing a sputtering method or various CVD methods. In particular, in order to form a dense inorganic insulating film, it is preferable to use a plasma CVD method.

(Metal layer 102, 202, 302)
The metal layer 102 functions to substantially prevent metal ions from the outside entering through the second layer 103 constituting the protective film during conduction. The metal layer 102 can be formed as a thin film with good controllability by a sputtering method, a vacuum evaporation method, or the like, and is easily formed as a film with few defects. Further, by selecting a metal (including an alloy or a laminate) that efficiently reflects the wavelength transmitted through the first layer 101, it is possible to improve light collecting efficiency and increase light extraction efficiency.

  Such a metal layer 102 stops the entry of ions from the outside. Alternatively, various metals can be selected as long as the conductive paste, the filler constituting the conductive paste, and the solder can be prevented from entering. Specific examples of the material for the metal layer include nickel, platinum, gold, aluminum, tungsten, molybdenum, alloys and laminates thereof.

  Since the metal layer can suitably prevent ion migration, it is preferable that the metal layer itself is not easily ionized. In particular, silver is highly conductive and has good reflectivity with respect to light corresponding to the band gap of a nitride semiconductor. However, it is preferable to use a metal element excluding silver that easily causes ion migration. The thickness of the metal layer 102 is preferably about 100 to several microns in consideration of reflection and miniaturization of the light emission wavelength from the light emitting element. As long as the metal layer 102 is not short-circuited, the metal layer 102 may be formed so as to cover the entire circumference of the nitride semiconductor, or may be formed in a plurality of divided shapes.

  When divided into a plurality of parts, a part of the p-type or n-type electrode may be formed. Thereby, the metal layer 302 can be formed simultaneously with the electrode formation. Therefore, a plurality of masks and etching processes can be simplified, and the number of processes can be reduced. When the metal layer 302 specifically functions as an electrode of a p-type nitride semiconductor, the metal layer 302 is made of a metal element such as nickel, cobalt, gold, or platinum in consideration of ohmic contact or the like. preferable. Similarly, in the case of functioning also as an electrode of an n-type nitride semiconductor, it is preferably composed of a metal element such as tungsten, aluminum or titanium. Further, when a nitride semiconductor is used for an LED having a double hetero structure through an active layer, the active layer is covered with a metal layer through an insulating layer because particularly a large amount of light is emitted from the end face of the active layer. As a result, the luminous efficiency can be further improved.

(Second layer 103)
The second layer 103 is an insulating film that covers the metal layer 102 and is provided to electrically insulate the outside from the nitride semiconductor. Therefore, when it is directly formed on the metal layer 102, it is required to have good adhesion to the metal layer 102 and high insulation. As the material used for the second layer 103, various organic resins can be selected in addition to various inorganic substances such as metal oxides and metal nitrides as in the first layer 101. More specifically, silicon oxide, titanium oxide, niobium oxide, hafnium oxide, aluminum oxide, zirconium oxide, silicon nitride, polyimide resin, and the like can be preferably exemplified. In the case where the second layer 103 is an inorganic insulating film, the tendency to short circuit decreases as it is formed more densely, but in order to form it more densely, it tends to take a longer film formation time.

  On the other hand, the second layer 103 may be disposed on the outermost periphery of the flip chip type optical semiconductor element. In the case of the second layer 103, an insulating organic material such as polyimide can be used to prevent damage to the protective film during mounting. Thereby, the reliability can be further improved. Specifically, after a nitride semiconductor is formed on a sapphire substrate or the like, it is divided into individual nitride semiconductor elements by scribing or the like on an adhesive sheet. The pressure-sensitive adhesive sheet is extended so that the divided nitride semiconductor elements can be picked up, and the individual semiconductor elements are pushed up from the lower part of the pressure-sensitive adhesive sheet by push-up pins and adsorbed to the collet. On the other hand, a conductive paste such as an Ag paste is applied to the electrode on the drive substrate to be mounted. The nitride semiconductor element adsorbed by the collet is placed on the conductive paste, and the conductive adhesive is cured. Thereby, the nitride semiconductor element can be arranged and fixed on a desired drive substrate or the like.

  In the case of a nitride semiconductor element, a nitride semiconductor is formed on a relatively hard sapphire substrate or the like. For this reason, although the strength is relatively high on the substrate side, the push-up pin pushes up the electrode surface side on which the insulating film is formed when it is attracted by the collet. Then, the semiconductor surface (the nitride semiconductor side with respect to the sapphire substrate) is flip-chip bonded to the conductive portion of the wiring substrate via a conductive adhesive.

  In this case, the occurrence rate of short-circuit failure tends to be considerably high despite the formation of an insulating film on the nitride semiconductor surface, the nitride semiconductor end surface, and the exposed substrate surface in order to prevent short-circuit failure. There is. As a cause of this, when the light emitting surface is the substrate surface, since the substrate is hard, scratches and cracks are hardly generated by the push-up pins. In particular, when the nitride semiconductor surface side is pushed up by a push-up pin, scratches and cracks are likely to occur in the protective film, so it is considered that the occurrence rate of a short circuit is high.

  Therefore, when an insulating film made of an organic resin is formed as the second layer 103 in particular, in a nitride semiconductor element of a flip chip bonding type, scratches on the nitride semiconductor surface due to push pins and cracking of the insulating film are prevented, and short circuit failure Therefore, a highly reliable nitride semiconductor device can be obtained.

  That is, the second layer 103 is made of an organic insulating film, so that the physical impact of the push-up pin from the lower part of the adhesive sheet during mounting on the wiring board is alleviated, and the cracking of the insulating film causing a short circuit is effective. Can be prevented. When a polyimide thin film is used for the second layer 103 as described above, the specific film thickness is 1 to 10 μm in terms of relaxation of the physical force received when pushed up by the push-up pin and the breakdown voltage of the insulating film. It is preferable. In addition, when the transmittance of the polyimide thin film at the emission main wavelength is 60% or less, light leakage from the end face of the nitride semiconductor element is suppressed, and variations in optical characteristics are reduced. Therefore, it is more preferable because the stability of the light distribution characteristic is obtained.

(Optical semiconductor device)
The optical semiconductor element of the present invention is a light receiving element or a light emitting element made of a nitride semiconductor. A nitride semiconductor formed on a light-transmitting insulating substrate and having at least a semiconductor junction can be used. Specifically, a nitride semiconductor can be formed on a light-transmitting insulating substrate using MOCVD or HVPE. Examples of such a light-transmitting insulating substrate include gallium nitride, sapphire (Al ₂ O ₃ ), spinel (MgAl ₂ O ₄ ), and the like. Examples of the semiconductor junction include a pn junction in addition to a MIS junction and a PIN junction. Further, depending on the characteristics of the optical semiconductor element, a homo or double hetero structure can be formed. Furthermore, a single quantum well structure or a multiple quantum well structure can be used.

  When the pin junction or the pn junction is short-circuited, the semiconductor characteristics are greatly damaged. Therefore, the present invention works effectively. The light emission wavelength and light reception wavelength of the optical semiconductor element can be variously selected from the ultraviolet light to the red region depending on the semiconductor material and the crystallinity thereof.

  In order to form a nitride semiconductor with good crystallinity, a sapphire substrate is preferably used. A light-emitting element and a light-receiving element having excellent semiconductor characteristics are formed by forming a buffer layer of GaN, AlN or the like on this sapphire substrate and forming a nitride semiconductor having a pn junction or the like on the buffer layer. Can be made. Forming the substrate with sapphire is particularly preferable because it has high hardness, the substrate itself has translucency, and can prevent entry of moisture and the like from the outside.

  The nitride semiconductor exhibits n-type conductivity without being doped with impurities, but it is preferable to appropriately introduce Si, Ge, Se, Te, Sn or the like as an n-type dopant. Moreover, double doping which doped the n-type dopant and the trace amount p-type dopant can also be performed. By changing the kind and amount of these dopants, the carrier density can be controlled and the electrical resistance can be lowered. On the other hand, when forming a p-type nitride semiconductor, the p-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. A gallium nitride semiconductor cannot be reduced in resistance simply by doping with a p-type dopant, and thus can be subjected to low-resistance treatment by low-energy electron beam irradiation, plasma irradiation, heat treatment, or the like after introduction of the p-type dopant.

  In order to form a pair of electrodes on the semiconductor exposed surface side, each semiconductor is preferably etched into a desired shape. Etching includes dry etching and wet etching. Examples of dry etching include reactive ion etching, ion milling, focused beam etching, and ECR etching. As wet etching, a mixed acid of nitric acid and phosphoric acid can be used. However, it goes without saying that a mask is formed in a desired shape using a material such as silicon nitride or silicon oxide before etching. Hereinafter, although the Example of this invention is described in full detail, it cannot be overemphasized that it is not limited only to this.

Example 1
A nitride semiconductor was formed by MOCVD using the cleaned C-plane of sapphire as the film-forming surface. The sapphire substrate 104 was placed in the film forming apparatus and heated to 650 ° C., and a buffer layer 105 was formed by flowing TMG (trimethylgallium) gas and nitrogen gas as source gases and hydrogen gas as a carrier gas. Once the introduction of the source gas is stopped, the film formation temperature is raised to 1150 ° C., and silane is added as an n-type dopant gas to TMG gas, nitrogen gas, and hydrogen gas to form an n-type gallium nitride layer 106 having a thickness of 5 μm. did. Next, after the supply of TMG gas is stopped and the film formation temperature is lowered to 800 ° C., TMG gas, TMA (trimethylaluminum) gas, nitrogen gas and hydrogen gas are supplied to form indium gallium nitride having a thickness of 3 nm. A light emitting layer 107 was formed.

  Next, after the supply of the source gas is stopped and the film formation temperature is raised to 1050 ° C., TMG gas, TMA gas, nitrogen gas, hydrogen gas as the carrier gas, and cyclopentadiethyl magnesium as the impurity gas are added again. A p-type cladding layer 108 having a thickness of 300 mm is formed.

  A p-type contact layer 109 having a thickness of 1500 mm is formed on the p-type cladding layer 108 in the same manner as the formation of the p-type cladding layer except that the supply of TMA gas is stopped. (The semiconductor layer to be a p-type nitride semiconductor was heat-treated at 400 ° C. or higher after the film formation.) Thus, a nitride semiconductor having a double heterostructure was formed through the active layer. In order to form electrodes on the same side of the semiconductor wafer, a mask is used to partially etch the n-type contact layer while leaving a part of the active layer, p-type cladding layer, and p-type contact layer. Similarly, the sapphire substrate is etched to a size that can be separated as each LED chip. After the etching, an island-shaped nitride semiconductor layer is formed on the sapphire substrate.

  As an electrode 110 that is in contact with the p-type contact layer 109 and covers the entire surface, a platinum film was formed at a thickness of 500 mm using a sputtering method. On this electrode 110, a platinum film having a thickness of 0.7 μm was formed as a 100 μm square p-type electrode 111. On the n-type contact layer 106, a tungsten / aluminum film having a thickness of 200 μm / 0.7 μm was formed as an n-type electrode 112 having a diameter of 100 μm. Thus, a pair of positive and negative electrodes 111 and 112 are formed on the same plane side on the island-shaped nitride semiconductor.

  In order to form the first layer 101 on each of the p-type and n-type electrodes on which each nitride semiconductor was formed, the semiconductor wafer was placed in a plasma CVD apparatus. A silicon oxide film was formed on the entire surface of the semiconductor wafer using silane gas and nitrogen oxide gas as source gases. After forming the silicon oxide film, the silicon oxide film was taken out from the plasma CVD apparatus and subjected to dry etching using a resist mask to expose the surfaces of the p-type electrode 111 and the n-type electrode 112. The resist mask was removed, and a silicon oxide film to be the first layer 101 was formed on the semiconductor wafer.

  Subsequently, the semiconductor wafer was placed in a sputtering apparatus, and sputtering was performed using platinum as a target, thereby forming a platinum layer having a thickness of 500 mm to be the metal layer 102. The surfaces of the p-type electrode 111 and the n-type electrode 112 were exposed by lift-off. Further, silicon oxide for the second layer 102 is formed again under the same conditions as those for the first layer 101. Thereafter, the mask formed on the p-type electrode 111 and the n-type electrode 112 is removed. Thus, a protective film having a three-layer structure of silicon oxide 101, platinum 102, and silicon oxide 103 is formed on the surface of the nitride semiconductor except the surface of each p-type electrode 111 and n-type electrode 112 and the sapphire substrate 104. The By separating the semiconductor wafer, each flip-chip type LED can be obtained.

  Of the obtained LED chips, 1400 were die-bonded using Ag paste on a drive circuit on which a pair of electrodes having an electrode interval of about 100 μm was formed. When an electric current was passed through each LED, light was emitted through the sapphire substrate 104 and all light was emitted.

(Comparative Example 1)
Instead of providing the metal layer and the second layer, a flip-chip type LED as shown in FIG. 4 was formed in the same manner except that the thickness of the first layer was the same as the thickness of the protective film of Example 1. As in Example 1, 1400 LEDs were die-bonded on the drive circuit using Ag paste. There were five lamps that were unlit when a current was passed through each LED. In addition, there were 8 light emitting luminances that were extremely dark. When the non-lighted thing was investigated using the focused ion beam processing apparatus, it was leaking because Ag penetrated through the protective film. In addition, when the average brightness excluding that in which the light emission brightness was extremely dark was 100, the average brightness in Example 1 was 121.

(Example 2)
In Example 2, a polyimide film was used instead of forming the second layer 203 with silicon oxide as in the LED shown in FIG. A flip chip type LED was constructed in the same manner as in Example 1 except that the polyimide layer was applied and cured to form the second layer 203. When the obtained LED was measured in the same manner as in Example 1 and Comparative Example 1, almost the same result as in Example 1 was obtained. In addition, Example 2 tends to be less deteriorated with time than Example 1.

(Example 3)
A flip chip type LED was formed in the same manner as in Example 1 except that the thickness of the metal layer 302 was 0.7 μm and was integrally formed as a p-type electrode as shown in FIG. Although the obtained LED simplified the process, it was possible to obtain almost the same reliability as in Example 1.

The typical sectional view of the flip chip type optical semiconductor device of the present invention is shown. FIG. 3 is a schematic cross-sectional view in which another flip-chip type optical semiconductor element of the present invention is disposed on a drive substrate. The typical sectional view of other flip chip type optical semiconductor elements of the present invention is shown. The typical sectional view of the flip chip type optical semiconductor element shown for comparison with the present invention is shown.

Explanation of symbols

100, 200, 300 ... optical semiconductor elements 101, 201, 301 ... first layer 102 made of an inorganic insulating film, 202 ... metal layer 103, 303 ... second layer 104 made of an inorganic insulating film. , 204, 304... Translucent insulating substrates 105, 205, 305... Buffer layers 106, 206, 306... N-type contact layers 107, 207, 307. .. p-type cladding layers 109, 209, 309... P-type contact layers 110, 210, 310... Electrodes 111, 211... P-type electrodes 112, 212, 312 formed on the p-type semiconductor .... n-type electrode 203 ... second layer 214 made of organic insulating film ... electrode pattern 215 formed on drive substrate ... drive substrate 302 ... metal layer 4 constituting p-type electrode 0: optical semiconductor element 401: first layer 404 made of inorganic insulating film ... translucent insulating substrate 405 ... buffer layer 406 ... n-type contact layer 407 ... active layer 408 ..P-type cladding layer 409... P-type contact layer 410... Electrode 411 formed on p-type semiconductor... P-type electrode 412.

Claims (6)

A flip chip type having a protective film in which positive and negative electrodes are provided on the same plane side of a nitride semiconductor formed on a light-transmitting insulating substrate, and the nitride semiconductor layer surface is covered except for an exposed portion of the electrode surface LED ,
The protective film has at least a three-layer structure of a first layer made of an insulating film, a metal layer on the first layer, and a second layer made of an insulating film on the metal layer,
Flip chip type LED further the substrate surface that is exposed from the nitride semiconductor of the substrate, wherein the protective film is formed. 2. The flip chip type according to claim 1, wherein the first layer and / or the second layer is at least one selected from silicon oxide, titanium oxide, niobium oxide, hafnium oxide, aluminum oxide, zirconium oxide, silicon nitride, and polyimide. LED . The flip chip type LED according to claim 1 or 2, wherein the first layer is an inorganic insulating film, and the second layer is an organic insulating film. The flip chip type LED according to any one of claims 1 to 3, wherein the metal layer has a shape divided into a plurality of parts. The flip chip type LED according to any one of claims 1 to 4, wherein the metal layer is formed as a positive electrode. The flip chip type LED according to any one of claims 1 to 5, wherein the LED is disposed with an electrode connected to a drive substrate.

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