JP4454773B2 - Alignment method and alignment apparatus - Google Patents

Description

【００３８】
表中、左側は工程毎に指定するモード、右側は各モードにおける判断方法を示す。該モードは工程毎に選択できるようになっており、工程に応じて使い分けるようにしておく。以下各モードのプリアライメント計測判断方法について説明する。
【００３９】
モードの設定に「１．指定モード」が選択されている時にはプリアライメントを行うウエハを予め指定する方法をとる。前工程を処理した装置が替わるウエハでプリアライメント工程を行うように設定しておくことによりロット途中でウエハずれ量が変わった時に効果的にプリアライメント計測を行うことができる。
【００４０】
モードの設定に「２．オートモード」が設定されている時にはウエハずれ量ｗ（ｘ，ｙ，θ）の変動量でプリアライメント計測を行うかどうかの判定を行う方法をとる。この場合、例えば最近処理した２枚分のウエハずれ量を記憶しておき差分を算出する。該差分が精密アライメント計測時の検出範囲内に入っている場合にはプリアライメント計測を行わない、該差分が精密アライメント計測時の検出範囲を超える場合にはプリアライメント計測を行う、という判定を行う。この方法によればロット内のウエハずれ量の安定性が懸念される場合にも、ずれ量のばらつきが大きい場合には的確にプリアライメントを行い、またウエハずれ量のばらつきが少ない場合には効果的にプリアライメント計測を省略することができる。
【００４１】
【デバイス生産方法の実施例】
次に上記説明した位置合わせ装置または位置合わせ方法による露光装置または露光方法を利用したデバイスの生産方法の実施例を説明する。
図６は微小デバイス（ＩＣやＬＳＩ等の半導体チップ、液晶パネル、ＣＣＤ、薄膜磁気ヘッド、マイクロマシン等）の製造のフローを示す。ステップ１（回路設計）ではデバイスのパターン設計を行う。ステップ２（マスク製作）では設計したパターンを形成したマスクを製作する。一方、ステップ３（ウエハ製造）ではシリコンやガラス等の材料を用いてウエハを製造する。ステップ４（ウエハプロセス）は前工程と呼ばれ、上記用意したマスクとウエハを用いて、リソグラフィ技術によりウエハ上に実際の回路を形成する。次のステップ５（組み立て）は後工程と呼ばれ、ステップ４により作製されたウエハを用いて半導体チップ化する工程であり、アッセンブリ工程（ダイシング、ボンディング）、パッケージング工程（チップ封入）等の工程を含む。ステップ６（検査）ではステップ５で作製された半導体デバイスの動作確認テスト、耐久性テスト等の検査を行う。こうした工程を経て半導体デバイスが完成し、これが出荷（ステップ７）される。
【００４２】
図７は上記ウエハプロセスの詳細なフローを示す。ステップ１１（酸化）ではウエハの表面を酸化させる。ステップ１２（ＣＶＤ）ではウエハ表面に絶縁膜を形成する。ステップ１３（電極形成）ではウエハ上に電極を蒸着によって形成する。ステップ１４（イオン打込み）ではウエハにイオンを打ち込む。ステップ１５（レジスト処理）ではウエハに感光剤を塗布する。ステップ１６（露光）では上記説明した位置合わせ方法または位置合わせ装置を有する露光装置によって、マスクの回路パターンをウエハに焼付露光する。ステップ１７（現像）では露光したウエハを現像する。ステップ１８（エッチング）では現像したレジスト像以外の部分を削り取る。ステップ１９（レジスト剥離）ではエッチングが済んで不要となったレジストを取り除く。これらのステップを繰り返し行うことによって、ウエハ上に多重に回路パターンが形成される。
【００４３】
本実施例ではこの繰り返しの各プロセスにおいて、上記述べたように位置合わせ方法または位置合わせ装置を適用することで、プロセスに影響を受けず正確な位置合わせを可能としている。
本実施例の生産方法を用いれば、従来は製造が難しかった高集積度のデバイスを低コストに製造することができる。
【００４４】
【発明の効果】
本発明によれば、プリアライメントを省略してスループットに優れた位置合わせが実現できる。
【図面の簡単な説明】
【図１】 半導体露光装置の要部を示す概略図である。
【図２】 従来の位置合わせ方法によるウエハ処理工程を示すフローチャートである。
【図３】 ウエハとアライメントマークを示す図である。
【図４】 本発明の第１の実施例に係るウエハ処理工程を示すフローチャートである。
【図５】 本発明の第２の実施例に係るウエハ処理工程を示すフローチャートである。
【図６】 微小デバイスの製造の流れを示す図である。
【図７】 図６におけるウエハプロセスの詳細な流れを示す図である。
【符号の説明】
１：操作端末、２：制御演算装置、３：搬送ハンド、４：ウエハキャリア、５：メカプリアライメントステージ、６：ＸＹステージ、７：光学顕微鏡、８：位置検出装置、９：縮小投影レンズ、１０：レチクル、Ｗ：ウエハ。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an alignment method and an alignment apparatus for aligning a substrate such as a wafer with respect to an electronic circuit pattern such as a mask or a reticle in an exposure apparatus for manufacturing a semiconductor element.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an exposure apparatus such as a stepper for manufacturing a semiconductor element is configured to expose and print, that is, transfer, an electronic circuit pattern of a mask or a reticle onto a wafer which is a substrate for a silicon integrated circuit. In order to manufacture a semiconductor device having a highly integrated circuit from a wafer, it is an important factor to align the wafer with an electronic circuit pattern of a mask or a reticle with high accuracy and high efficiency.
[0003]
FIG. 1 is a schematic view of the main part of an exposure apparatus for manufacturing semiconductor elements, FIG. 2 is a flowchart showing a conventional wafer exposure process, and FIG. 3 is a schematic diagram of a wafer and alignment marks. FIG. 3A is a schematic diagram showing the arrangement of chips baked on the wafer, and FIG. 3B is an enlarged view of the chips. A conventional alignment process will be described below with reference to the flowchart of FIG. 2 with reference to FIG.
[0004]
First, in step S21, the wafer W is transferred from the carrier 4 onto the pre-alignment stage 5 by the transfer hand 3, and a mechanical pre-alignment process is performed. In the mechanical pre-alignment step, a notch portion such as an orientation flat in which a part provided in advance in a part of the wafer W is cut out linearly, a notch in which a part is cut out, and the outer periphery of the wafer W are detected. To align the wafer W.
[0005]
Next, in step S22, a pre-alignment process using the pre-alignment mark PM shown in FIG. 3 is performed. In the pre-alignment process, for a plurality of sample shots selected in advance from a plurality of shots baked on the wafer W, the pre-alignment marks PM provided and baked in the circuit pattern are positioned in the detection region of the microscope 7. As described above, the XYθ stage 6 is driven, and the shift amount of the pre-alignment mark PM is measured by the detection device 8. The microscope 7 has a configuration that can be switched in two stages of high magnification / low magnification. In the pre-alignment process, it is necessary to take a detection range large in consideration of variations in the mechanical pre-alignment. The pre-alignment mark PM is measured. The deviation amount of the wafer W is calculated from the obtained deviation amounts of the plurality of sample shots, and correction is performed.
[0006]
Next, in step S23, a precision alignment process using the precision alignment marks MX and MY shown in FIG. 3 is performed. In the precision alignment process, as in the pre-alignment process, with respect to a plurality of preselected sample shots, XYθ so that the precision alignment marks MX and MY provided and baked in the circuit pattern are located in the detection region of the microscope 7. The stage 6 is driven, and the shift amount of the precision alignment marks MX and MY is measured by the detection device 8. In this precision alignment process, in order to obtain accuracy, a method of increasing the magnification of the microscope 7 and increasing the number of sample shots is employed. When the measurement of all sample shots is completed, the deviation amount of the wafer W is calculated and corrected, and the precision alignment process is completed.
[0007]
When the alignment process from step S21 to step S23 described above is completed, the exposure process is performed in step S24, and then the process proceeds to step S25 to determine whether or not the processing of all the wafers is completed. The processes from S21 to S24 are repeated, and when the processing of all the wafers is completed, the exposure process is completed.
[0008]
[Problems to be solved by the invention]
In recent years, the mechanical pre-alignment technology has progressed, the positioning accuracy of mechanical pre-alignment has improved, the reproducibility of feeding to the pre-alignment has improved, and the pre-alignment process is not necessary.
[0009]
However, if all wafer processing steps are performed with the same equipment, the pre-alignment step can be eliminated and only the mechanical pre-alignment step and the precision alignment step can be used for alignment. In many cases, wafers that have been exposed to the machine are processed, and mechanical pre-alignment varies between machines, and mechanical pre-alignment varies between processes due to deformation of the wafer that has undergone heat treatment due to the progress of the process. In the configuration with only the process and the precision alignment process, the mark will be out of the detection range of the microscope at the time of the precision alignment and measurement errors will occur frequently. It is a factor that hinders improvement.
[0010]
The present invention is intended to omit the flop realignment to provide a positioning method and positioning device superior alignment can be achieved in the throughput.
[0011]
[Means for Solving the Problems]
The alignment method of the present invention for solving the above-described problems includes a mechanical pre-alignment step for aligning the substrate by detecting the outer periphery of the substrate, and a position detection on the substrate in the alignment method for aligning the substrate. A determination step for determining whether or not to perform a pre-alignment step of aligning the substrate by detecting the target for detection using a low-magnification optical system; A precision alignment step of aligning the substrate by detecting using a system, and in the determination step, the pre-alignment step when the substrate is designated in advance to perform pre-alignment , Sequentially performing the precision alignment process, and if the substrate is not designated to pre-align in advance, If the amount of deviation of the substrate after the capri-alignment step is within a predetermined range, the pre-alignment step is omitted and the precision alignment step is performed. If the amount of deviation of the substrate exceeds a predetermined range, the pre-alignment is performed. It is determined that the process and the precision alignment process are sequentially performed .
[0012]
The alignment apparatus of the present invention is a positioning apparatus for aligning a substrate, wherein mechanical pre-alignment means for aligning the substrate by detecting the outer periphery of the substrate and a position detection target on the substrate are reduced. A pre-alignment means for aligning the substrate by detection using a double optical system, a determination means for determining whether or not to align the substrate by the pre-alignment means, and a position on the substrate And a precision alignment means for aligning the substrate by detecting a detection target using a high-magnification optical system, and the determination means is designated so that the substrate is pre-aligned in advance. The alignment of the substrate by the pre-alignment means and the alignment of the substrate by the precision alignment means. Were sequentially performed, the case where the substrate is not specified to advance perform pre-alignment, the pre-alignment displacement amount of the substrate after the positioning of the substrate by the mechanical prealignment means is within a predetermined range by omitting the alignment of the substrate by means have line alignment of the substrate by the precision alignment means aligning of the substrate displacement amount of the substrate by the pre-alignment unit as long as more than a predetermined range, It is determined that the alignment of the substrate by the precision alignment means is sequentially performed .
[0013]
DETAILED DESCRIPTION OF THE INVENTION
As an embodiment of the present invention, (1) a positioning method for sequentially performing the mechanical pre-alignment step, the pre-alignment step, and the precision alignment step; and (2) not performing the pre-alignment step after the mechanical pre-alignment step. In addition, there is an alignment method characterized in that there are two alignment methods: an alignment method in which the fine alignment step is performed after correction with the substrate displacement amount calculated by the method (1).
[0014]
In the alignment step when processing a plurality of substrates, the first substrate is aligned by the alignment method (1), and the second and subsequent substrates are the alignment method (2). In the alignment process when processing a plurality of substrates, it is possible to select the alignment method (1) or (2) for each substrate. In the alignment method having means for performing the alignment, or in the alignment step when processing a plurality of substrates, means for storing the substrate displacement amount measured by the alignment method of (1), and the stored substrate displacement amount In the case of being stable, an alignment method having means for switching to the alignment method of (2) is desirable. Further, it is preferable to have a means for selecting any one of these alignment methods. When the position detection target cannot be detected by the precise alignment by the alignment method of (2), the alignment method of (1) is used. It is preferable to align.
[0015]
【Example】
(First embodiment)
FIG. 4 is a flowchart in which the alignment method according to the present invention is applied to the semiconductor exposure apparatus shown in FIG. Hereinafter, an alignment apparatus and alignment method according to a first embodiment of the present invention will be described with reference to FIGS.
[0016]
A semiconductor exposure apparatus according to an embodiment of the present invention includes an operation terminal 1, a control arithmetic device 2, a transfer hand 3, a wafer carrier 4, a mechanical pre-alignment stage 5, an XY stage 6, an optical microscope 7, a position detection device 8, and a reduction device. An exposure process is performed for transferring a circuit pattern formed on the reticle 10 to the wafer W as a substrate having a position detection target.
[0017]
The mechanical pre-alignment stage 5 constitutes mechanical pre-alignment means for performing alignment by detecting the outer periphery of the wafer W in the alignment apparatus provided in the semiconductor exposure apparatus according to the present embodiment. The XY stage 6 includes a pre-alignment unit that performs position alignment by detecting the position detection target PM on the wafer W using a low-magnification optical system of the optical microscope 7, and a position detection target MX on the wafer W. , MY are detected using a high-magnification optical system of the optical microscope 7 to constitute a precision alignment means for performing final alignment. The control arithmetic device 2 includes a determination unit that determines whether or not to perform alignment by the pre-alignment unit.
[0018]
An alignment method for sequentially positioning the wafers W in a specific range is performed as follows.
First, in step S41, the shift amount w (x, y, θ) of the wafer W is cleared. Here, the shift amount w (x, y, θ) is the shift amount between the shift components x, y and the rotation component θ of the wafer W, which is finally calculated after completing the alignment process.
[0019]
Next, in step S42, the wafer W is transferred from the carrier 4 onto the mechanical pre-alignment stage 5 by the transfer hand 3, and a mechanical pre-alignment process is performed. In the mechanical pre-alignment step, as shown in FIG. 3, a notch portion such as an orientation flat in which a portion provided in advance in a portion of the wafer W is cut out linearly, a notch in which a portion is cut out, and the wafer The wafer W is aligned by detecting the outer periphery of W.
[0020]
Next, in step S43, it is determined whether or not there is a shift amount w (x, y, θ). In step S43, when there is no deviation amount w (x, y, θ), the process proceeds to step S46 to perform a pre-alignment process. In step S43, if there is a deviation amount w (x, y, θ), the process proceeds to step S44, correction is performed using the deviation amount w (x, y, θ), and the process proceeds to step S45.
[0021]
In step S45, the microscope 7 is used to observe one location in the sample shot for precision alignment, and it is determined whether or not the precision alignment marks MX and MY are present in the field of view of the microscope 7. If the precision alignment marks MX and MY are not present, the process proceeds to a pre-alignment process in step S46. If the precision alignment marks MX and MY are present, the precision alignment in step S47 is not performed without performing the pre-alignment process in step S46. Proceed to the process.
[0022]
The pre-alignment process in step S46 is the same as the conventional method, and a plurality of sample shots selected in advance from a plurality of shots baked on the wafer W are provided and baked in the circuit pattern. The XYθ stage 6 is driven so that the pre-alignment mark PM is positioned in the detection region of the microscope 7, and the shift amount of the pre-alignment mark PM is measured by the detection device 8. At this time, the microscope 7 performs measurement at a low magnification. The deviation amount of the wafer W is calculated from the obtained deviation amounts of the plurality of sample shots and corrected.
[0023]
The precision alignment process in step S47 is also the same as the conventional method, and the precision alignment marks MX and MY provided in the circuit pattern and baked for a plurality of pre-selected sample shots as in the pre-alignment process. XYθ stage 6 is driven so as to be positioned in the detection region of microscope 7, and the displacement amount of precision alignment marks MX and MY is measured by detection device 8. In this precision alignment process, in order to obtain accuracy, a method of increasing the magnification of the microscope 7 and increasing the number of sample shots is adopted. When the measurement of all sample shots is completed, the amount of deviation of the wafer W is calculated and corrected.
[0024]
When the precision alignment process in step S47 is completed, the process proceeds to step S48. In step S48, the final correction amount of the wafer W calculated in the precision alignment process in step S47 is stored as a shift component w and a shift component shift amount w (x, y, θ) of the wafer W.
[0025]
When the alignment process from step S42 to step S48 described above is completed, the exposure process is performed in step S49, and then the process proceeds to step S4A to determine whether the process for all the wafers is completed. Steps S49 to S49 are repeated, and when the processing of all the wafers is completed, the exposure processing step is completed.
[0026]
(Second embodiment)
The method described in the first embodiment is effective when the shift amount of the wafer W is stable in the lot. However, when a wafer is processed by configuring a production line with a plurality of exposure apparatuses, the exposure apparatus used for each process may differ, and the amount of wafer W shift in the lot varies or is in the middle of the lot. The amount of deviation of the wafer W may change. In such a case, even if the method described in the first embodiment is applied, pre-alignment measurement is often required, and the processing efficiency cannot be increased effectively.
[0027]
In the following, a second embodiment according to the present invention in view of the above problems will be described.
FIG. 5 is a flowchart in which the alignment method according to the second embodiment of the present invention is applied to the semiconductor exposure apparatus shown in FIG. A second embodiment of the alignment method according to the present invention will be described below with reference to FIG.
[0028]
First, in step S51, the shift amount w (x, y, θ) of the wafer W is cleared. Here, the shift amount w (x, y, θ) is the shift amount between the shift components x, y and the rotation component θ of the wafer W, which is finally calculated after completing the alignment process.
[0029]
Next, in step S52, the wafer W is transferred from the carrier 4 onto the pre-alignment stage 5 by the transfer hand 3, and a mechanical pre-alignment process is performed. In the mechanical pre-alignment step, a notch portion such as an orientation flat in which a part provided in advance in a part of the wafer W is cut out linearly, a notch in which a part is cut out, and the outer periphery of the wafer W are detected. To align the wafer W.
[0030]
Next, in step S53, it is determined whether or not pre-alignment measurement is necessary for the wafer W. In step S53, if pre-alignment is necessary, the process proceeds to step S56 to perform a pre-alignment process. If it is determined in step S53 that pre-alignment is not necessary, the process proceeds to step S54 where correction is performed using the shift amount w (x, y, θ), and the process proceeds to step S55.
[0031]
In step S55, the microscope 7 is used to observe one location in the sample shot for precision alignment, and it is determined whether or not the precision alignment marks MX and MY are present in the field of view of the microscope 7. If the precision alignment marks MX and MY are not present, the process proceeds to the pre-alignment process in step S56. If the precision alignment marks MX and MY are present, the precision alignment in step S57 is not performed without performing the pre-alignment process in step S56. Proceed to the process.
[0032]
The pre-alignment process in step S56 is the same as the conventional method, and a plurality of sample shots selected in advance from a plurality of shots baked on the wafer W are provided and baked in the circuit pattern. The XYθ stage 6 is driven so that the pre-alignment mark PM is positioned in the detection region of the microscope 7, and the shift amount of the pre-alignment mark PM is measured by the detection device 8. At this time, the microscope 7 performs measurement at a low magnification. The deviation amount of the wafer W is calculated from the obtained deviation amounts of the plurality of sample shots and corrected.
[0033]
The precision alignment process of step S57 is also the same as the conventional method. Like the pre-alignment process, a plurality of sample shots selected in advance are provided in the circuit pattern and baked into the precision alignment marks MX and MY. XYθ stage 6 is driven so as to be positioned in the detection region of microscope 7, and the displacement amount of precision alignment marks MX and MY is measured by detection device 8. In this precision alignment process, in order to obtain accuracy, a method of increasing the magnification of the microscope 7 and increasing the number of sample shots is adopted. When measurement of all sample shots is completed, the amount of deviation of the wafer W is calculated and corrected.
[0034]
When the precision alignment process in step S57 is completed, the process proceeds to step S58. In step S58, the final wafer correction amount calculated in the precision alignment process in step S57 is stored in the shift component w and the shift component displacement amount w (x, y, θ) of the wafer W.
[0035]
When the alignment process from step S52 to step S58 described above is completed, the exposure process is performed in step S59, and then the process proceeds to step S5A to determine whether or not the processing of all the wafers is completed. The processes from S52 to S59 are repeated, and when the processing of all the wafers is completed, the exposure process is completed.
[0036]
Next, details of a method for determining whether or not the pre-alignment measurement performed in step S53 is necessary will be described with reference to Table 1. Table 1 shows a method for determining whether or not pre-alignment measurement is necessary.
[0037]
[Table 1]

[0038]
In the table, the left side shows the mode designated for each process, and the right side shows the judgment method in each mode. The mode can be selected for each process, and is selected according to the process. The pre-alignment measurement judgment method in each mode will be described below.
[0039]
When “1. designation mode” is selected as the mode setting, a method of pre-designating a wafer to be pre-aligned is employed. By setting so that the pre-alignment process is performed on a wafer in which the apparatus that has processed the previous process is changed, pre-alignment measurement can be effectively performed when the wafer shift amount changes during the lot.
[0040]
When “2. Auto mode” is set in the mode setting, a method of determining whether or not to perform pre-alignment measurement with a variation amount of the wafer shift amount w (x, y, θ) is used. In this case, for example, the recently processed two wafer misalignments are stored and the difference is calculated. When the difference is within the detection range at the time of precision alignment measurement, pre-alignment measurement is not performed, and when the difference exceeds the detection range at the time of precision alignment measurement, pre-alignment measurement is performed. . According to this method, even if there is a concern about the stability of the amount of wafer misalignment within a lot, if the variation in the amount of misalignment is large, the pre-alignment is performed accurately, and if the variation in the amount of wafer misalignment is small, the effect is effective. Thus, pre-alignment measurement can be omitted.
[0041]
[Example of device production method]
Next, an embodiment of a device production method using the exposure apparatus or exposure method according to the above-described alignment apparatus or alignment method will be described.
FIG. 6 shows a manufacturing flow of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a device pattern is designed. In step 2 (mask production), a mask on which the designed pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).
[0042]
FIG. 7 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed onto the wafer by exposure using the exposure apparatus having the alignment method or alignment apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
[0043]
In the present embodiment, in each of the repeated processes, the alignment method or alignment apparatus is applied as described above, thereby enabling accurate alignment without being affected by the process.
By using the production method of this embodiment, a highly integrated device that has been difficult to manufacture can be manufactured at low cost.
[0044]
【The invention's effect】
According to the present invention, alignment with excellent throughput omitted Prin alignment can be realized.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a main part of a semiconductor exposure apparatus.
FIG. 2 is a flowchart showing a wafer processing process according to a conventional alignment method.
FIG. 3 is a view showing a wafer and alignment marks.
FIG. 4 is a flowchart showing a wafer processing process according to the first embodiment of the present invention.
FIG. 5 is a flowchart showing a wafer processing process according to a second embodiment of the present invention.
FIG. 6 is a diagram showing a flow of manufacturing a microdevice.
7 is a diagram showing a detailed flow of the wafer process in FIG. 6. FIG.
[Explanation of symbols]
1: operation terminal, 2: control operation device, 3: transfer hand, 4: wafer carrier, 5: mechanical pre-alignment stage, 6: XY stage, 7: optical microscope, 8: position detection device, 9: reduction projection lens, 10: Reticle, W: Wafer.

Claims (7)

In an alignment method for aligning substrates,
A mechanical pre-alignment step of aligning the substrate by detecting the outer periphery of the substrate;
A determination step of determining whether to perform a pre-alignment step of aligning the substrate by detecting the position detection target on the substrate using a low-magnification optical system;
A precision alignment step of aligning the substrate by detecting the position detection target on the substrate using a high-magnification optical system;
In the determination step, when the substrate is designated in advance to perform pre-alignment, the pre-alignment step and the precision alignment step are sequentially performed, and the substrate is not designated in advance to perform pre-alignment. If the deviation amount of the substrate after the mechanical pre-alignment step is within a predetermined range, the pre-alignment step is omitted and the precision alignment step is performed, and if the deviation amount of the substrate exceeds a predetermined range. It is judged that the said pre-alignment process and the said fine alignment process are performed sequentially, The alignment method characterized by the above-mentioned . The alignment method according to claim 1, wherein the substrate designated to perform pre-alignment in advance is the first substrate after the apparatus that has processed the previous process is changed.   The alignment method according to claim 1, wherein the displacement amount of the substrate is a correction amount calculated in the precision alignment step when the substrate is positioned before the substrate is positioned. . Wherein when omitting the pre-alignment process, when the position detection target in the precise alignment can not be detected, the alignment method according to any one of claims 1 to 3, characterized in that return to the pre-alignment step. In an alignment device for aligning substrates,
Mechanical pre-alignment means for aligning the substrate by detecting the outer periphery of the substrate;
Pre-alignment means for aligning the substrate by detecting the position detection target on the substrate using a low-magnification optical system;
Determining means for determining whether or not to perform alignment of the substrate by the pre-alignment means;
A precision alignment means for aligning the substrate by detecting the position detection target on the substrate using a high-magnification optical system;
The determination unit sequentially performs alignment of the substrate by the pre-alignment unit and alignment of the substrate by the precision alignment unit when the substrate is designated in advance to perform pre-alignment. If it is not designated to perform pre-alignment, the alignment of the substrate by the pre-alignment means is omitted if the displacement amount of the substrate after the alignment of the substrate by the mechanical pre-alignment means is within a predetermined range. to have line alignment of the substrate by the precision alignment means, if the deviation amount of the substrate than exceeds a predetermined range aligning of the substrate by the pre-alignment unit, a position of the substrate by the precision alignment means position match characterized by determining combined to sequentially perform Apparatus. An exposure apparatus comprising the alignment apparatus according to claim 5 . A device manufacturing method, comprising: exposing a substrate using the exposure apparatus according to claim 6 ; and developing the exposed substrate.

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