JP4341380B2 - Flexible wiring board, manufacturing method of flexible wiring board, electronic device, and electronic apparatus - Google Patents

Description

  The present invention relates to a flexible wiring board, a method for manufacturing a flexible wiring board, an electronic device, and an electronic apparatus.

For example, a flexible substrate on which an IC chip is mounted, a flexible substrate for connection to an external device, or the like is connected to the liquid crystal panel (see, for example, Patent Document 1).
Connection between the liquid crystal panel and the flexible substrate is generally performed as follows.
That is, first, the terminal on the liquid crystal panel side and the terminal on the flexible substrate side to be connected to the terminal are positioned via an anisotropic conductive film (ACF) or anisotropic conductive paste (ACP). Next, in this state, the terminals to be connected are connected to each other through conductive particles by pressing (pressing) the flexible substrate toward the liquid crystal panel.

  A hard material such as glass is used for a general liquid crystal panel or a substrate of a display element. The terminals provided on the substrate are generally formed by a vacuum process and have a thickness of 1 μm or less. On the other hand, the base material of the flexible substrate is made of a resin material and has high flexibility. The terminals provided thereon are formed by bonding metal foils or plating, and generally have a thickness of 5 μm or 10 μm or more. When both are pressed and bonded through ACF or ACP containing conductive particles, the respective terminals are electrically connected by the conductive particles.

  However, when the substrate of the liquid crystal panel is made of a resin material, there is a problem that the connection as described above is difficult. When a terminal of a liquid crystal panel composed of a resin substrate and a flexible substrate are pressed and bonded via an ACF or an ACP, both are bonded, but electrical connection is often not obtained. . Inventors investigated the connection part in order to solve this problem. As a result, it was revealed that the conductive particles broke through the terminals on the liquid crystal panel and destroyed the terminals. That is, a terminal made of a thin (generally 1 μm or less) metal layer (or conductive layer) formed by a vacuum process has a low strength. In addition, when the terminal is formed on a soft resin substrate, when the terminal is pressed and bonded to the flexible substrate through the ACF or ACP containing the conductive particles, the conductive particles break through the terminals of the liquid crystal panel. , It became clear that the terminal was destroyed.

  On the other hand, although the terminal on the liquid crystal panel having a hard substrate such as a glass substrate is formed of a very thin metal layer, the conductive substrate does not break through the terminal because the base substrate is hard. Moreover, although the board | substrate of a flexible substrate is soft, since the metal layer of the terminal on it is thick, the intensity | strength of a terminal itself is high. Therefore, similarly, the conductive particles do not break through the terminals. As a result, the terminals on the liquid crystal panel and the terminals of the flexible substrate are connected with good reproducibility.

  As described above, in the conventional glass substrate, the connection with the flexible substrate or the IC chip has been realized with good reproducibility by using ACF or ACP. However, it is only necessary to change the substrate to a resin substrate. This process has become very difficult and has poor reproducibility.

Japanese Patent Laid-Open No. 2001-291737

  An object of the present invention is to provide a flexible wiring board having a terminal having excellent strength, a method for manufacturing a flexible wiring board that can easily and reliably manufacture such a flexible wiring board, and a highly reliable electronic device. To provide devices and electronic equipment.

Such an object is achieved by the present invention described below.
The flexible wiring board of the present invention includes a flexible substrate, a plurality of switching elements, a wiring at least partially connected to the switching element, and a plurality of terminals connected to the wiring. The switching element, the wiring, and the terminal are all flexible wiring boards provided on the board,
The terminal is electrically connected to a terminal included in at least one of an external device and a driving IC via conductive particles contained in an anisotropic conductive film or an anisotropic conductive paste,
Comprising said wiring integrally formed portions, and a reinforcing layer having obtained conductive provided corresponding to said integrally formed part,
The thickness of the portion formed integrally with the wiring is set to 10 to 500 nm, and the thickness of the reinforcing layer is set to 3 to 50 μm .
Thereby, it becomes a flexible wiring board provided with the terminal excellent in intensity | strength.

In the flexible wiring board of the present invention, the substrate has a first portion provided with the switching element, and a strip-shaped second portion protruding laterally from the first portion,
It is preferable that at least a part of terminals of the flexible wiring board is provided in the second portion.
In the flexible wiring board of the present invention, it is preferable that the first portion and the second portion are integrally formed.
Accordingly, for example, even when the flexible wiring board is used in a bent or curved state, the first portion and the second portion are not separated, and thus cutting of the wiring is prevented. .

The flexible wiring board of the present invention is preferably used in a bent or curved state near the boundary between the first portion and the second portion.
As a result, for example, when an electronic device is constructed using a flexible wiring board and the electronic device is incorporated into an electronic apparatus, the space for incorporating the electronic device can be reduced, and the electronic apparatus can be reduced in size. Can be achieved.

In the flexible wiring board of the present invention, the switching element is preferably a thin film transistor.
In the flexible wiring board of the present invention, the thin film transistor is preferably an organic thin film transistor having a semiconductor layer mainly composed of an organic semiconductor material.
Accordingly, it is not necessary to separately manufacture a thin film transistor, and the thin film transistor can be directly manufactured on the substrate, so that the number of manufacturing steps of the flexible wiring substrate can be reduced.

In the flexible wiring board of the present invention, it is preferable that at least the vicinity of the surface of the terminal of the flexible wiring board is made of Au.
Thereby, the oxidation of the terminal which a flexible wiring board has can be prevented. Further, it is possible to perform the bonding with the terminal of the driving IC more reliably.

In the flexible wiring board of the present invention, the terminal of the flexible wiring board has a layer made of Au on the opposite side of the substrate, and the layer is formed by a displacement plating method. It is preferable.
Thereby, it can be set as the terminal which the flexible wiring board covered with the metal suitable for terminal uses has.
A manufacturing method of a flexible wiring board of the present invention is a manufacturing method of a flexible wiring board for manufacturing the flexible wiring board of the present invention,
Forming a conductor pattern having portions corresponding to the terminals of the wiring and the flexible wiring board ;
Characterized in that the portion corresponding to the terminal to which the flexible wiring board of the conductive pattern has, to form a reinforcing layer having the conductivity, and a step of obtaining a terminal to which the flexible wiring board has And
Thereby, a flexible wiring board can be manufactured easily and reliably.

In the method for manufacturing a flexible wiring board according to the present invention, the reinforcing layer is preferably formed by a plating method.
Thereby, a reinforcing layer having a desired film thickness can be formed with high film forming accuracy without using a large-scale apparatus such as a vacuum apparatus.
In the flexible wiring board manufacturing method of the present invention, the plating method is preferably an electroless plating method.
Thereby, the reinforcing layer can be formed with higher film forming accuracy.

In the flexible wiring board manufacturing method of the present invention, the conductor pattern may be formed using a catalytic metal having a catalytic function as a main material at least at a portion corresponding to a terminal of the flexible wiring board. preferable.
Thereby, for example, when the reinforcing layer is formed by electroless plating, the step of attaching the catalyst to the surface of the conductor pattern can be omitted.

In the method for producing a flexible wiring board of the present invention, it is preferable that the catalytic metal is mainly composed of at least one of Ni, Cu, Co, Pd, Au, and Pt.
These are all preferable because they have high catalytic action.
In the method for manufacturing a flexible wiring board according to the present invention, a conductor pattern and a reinforcing layer are sequentially formed on a sheet-shaped or roll-shaped base plate before being divided into the substrates, and then the base plate is formed with a plurality of base plates. It is preferable to divide the substrate.
Thereby, productivity is remarkably improved and the flexible wiring board of the present invention can be provided at low cost. Furthermore, since a manufacturing facility that does not depend on the shape of the flexible wiring board can be prepared, it is possible to quickly cope with various shapes.
The electronic device of the present invention has the flexible wiring board of the present invention.
Thereby, an electronic device with high reliability can be obtained.
An electronic apparatus according to the present invention includes the electronic device according to the present invention.
As a result, a highly reliable electronic device can be obtained.

Hereinafter, a flexible wiring board and a method of manufacturing the flexible wiring board of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<Flexible wiring board>
First, the configuration of the flexible wiring board of the present invention will be described.
FIG. 1 is a perspective view showing an embodiment of a flexible wiring board according to the present invention, and FIG. 2 is a longitudinal sectional view taken along line AA in FIG. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

A flexible wiring substrate 1 shown in FIG. 1 includes a flexible substrate 2, a pixel electrode 3, a thin film transistor (switching element) 4, a wiring 5, and a terminal 6. Is provided on the substrate 2.
The board | substrate 2 is a support body for supporting each part 3-6 provided on this.
As shown in FIG. 1, the substrate 2 includes a first portion 21 and a band-shaped second portion 22 formed integrally with the first portion 21.

The first portion 21 is provided with a pixel electrode 3 and a thin film transistor (hereinafter abbreviated as “TFT”) 4.
The second portion 22 is provided so as to protrude laterally from the first portion 21. A terminal 6 is provided in the second portion 22.
In the present embodiment, all of the terminals 6 are provided in the second portion 22, but some of the terminals 6 may be provided in the first portion 21.

A wiring 5 is provided (routed) from the second part and the second part to the first part.
The constituent material of the substrate 2 is not particularly limited as long as it is flexible. For example, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), aromatic polyester (Liquid crystal polymer), aromatic polyamide and the like can be mentioned, and one or more of these can be used in combination.

  The average thickness of the substrate 2 is slightly different depending on the constituent material and the like, and is not particularly limited, but is preferably about 10 to 2000 μm, and more preferably about 30 to 300 μm. If the thickness of the substrate 2 is too thin, the strength of the substrate 2 may be reduced and the function as a support may be impaired. On the other hand, if the thickness of the substrate 2 is too thick, the flexibility of the substrate 2 is reduced. There is a risk.

The pixel electrode 3 constitutes one electrode for applying a voltage for driving each pixel when an electrophoretic display device 20 to be described later is constructed using the flexible wiring substrate 1.
Examples of the constituent material of the pixel electrode 3 include Ni, Pd, Pt, Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Co, Al, Cs, and Rb. Metals such as these, alloys such as MgAg, AlLi, CuLi, etc., ITO (Indium Tin Oxide), SnO ₂ , Sb-containing SnO ₂ , oxides such as Al-containing ZnO, etc. Two or more kinds can be used in combination.

A drain electrode provided in the TFT 4 is connected to the pixel electrode 3. By controlling the operation of the TFT 4, driving of each pixel is controlled in the electrophoretic display device 20 described later.
The TFT 4 is preferably an organic thin film transistor having a semiconductor layer mainly composed of an organic semiconductor material. As a result, the TFT 4 can be directly manufactured on the substrate 2, and the number of manufacturing steps of the flexible wiring substrate 1 can be reduced.

  Examples of the constituent material of the organic semiconductor layer include naphthalene, anthracene, tetracene, pentacene, hexacene, phthalocyanine, perylene, hydrazone, triphenylmethane, diphenylmethane, stilbene, arylvinyl, pyrazoline, triphenylamine, triarylamine, oligo Low molecular organic semiconductor materials such as thiophene, phthalocyanine or derivatives thereof, poly-N-vinylcarbazole, polyvinylpyrene, polyvinylanthracene, polythiophene, polyhexylthiophene, poly (p-phenylenevinylene), polytinylenevinylene, Polytolylamine, pyrene formaldehyde resin, ethylcarbazole formaldehyde resin, fluorene-bithiophene copolymer, fluorene-allylamine copolymer Alternatively, a high molecular organic semiconductor material such as a derivative thereof can be used, and one or more of these can be used in combination, but it is particularly preferable to use a high molecular organic semiconductor material. .

A polymer organic semiconductor material can be formed by a simple method and can be oriented relatively easily. Of these, it is particularly preferable to use a fluorene-bithiophene copolymer or a polyarylamine derivative because it is difficult to oxidize in air and is stable.
In addition, an organic semiconductor layer composed mainly of a polymer organic semiconductor material can be reduced in thickness and weight, and is excellent in flexibility. Therefore, the organic semiconductor layer can be applied to a thin film transistor used as a switching element of a flexible display. Suitable for application.

The terminal 6 includes a first terminal 61, a second terminal 62, a third terminal 63, and a fourth terminal 64.
Among these, the first terminal 61, the second terminal 62, and the third terminal 63 each constitute a terminal for connecting (mounting) the driving IC. The fourth terminal 64 constitutes a terminal for connecting to an external device.

The wiring 5 includes a first wiring 51, a second wiring 52, and a third wiring 53.
Among these, the first wiring 51 connects the first terminal 61 and the gate electrode of the TFT 4, respectively, and the second wiring 52 connects the second terminal 61 and the source electrode of the TFT 4, respectively. To do. Further, the third wiring 53 connects the third terminal 63 and the fourth terminal 64, respectively.

By constructing an electronic device (electrophoretic display device 20 to be described later) using such a flexible wiring substrate 1, when incorporating the electronic device into an electronic device, for example, the first portion 21 and The flexible wiring board 1 can be incorporated in a bent or curved state in the vicinity of the boundary with the second portion 22. Thereby, it is possible to reduce the space where the electronic device is incorporated, and to reduce the size of the electronic device.
In particular, since the first portion 21 and the second portion 22 are integrally formed, even if the flexible wiring substrate 1 is used in a bent or curved state, the first portion Since the 21 and the second portion 22 are not separated, the wiring 5 is prevented from being cut, and a highly reliable electronic device (electronic apparatus) can be obtained.

Now, the present invention is characterized in that the terminal 6 described above includes a reinforcing layer having conductivity.
Specifically, as shown in FIG. 2, the terminal 6 is configured by forming a reinforcing layer 8 at the end of the conductor pattern 7.
Here, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) is generally used for connection between the terminal 6 and the terminal of the driving IC (IC side terminal).

  A terminal without a reinforcing layer (substrate-side terminal) can be manufactured at the same time as the wiring on the substrate is formed, and thus has been conventionally used as the simplest configuration. When the substrate is made of a hard material such as glass, even in this simple structure, the ACF and ACP containing conductive particles are inserted between the terminals of the driving IC terminal (IC side terminal). When pressed, the terminals are connected with good reproducibility. However, when the base material of the substrate is a resin material, it has been found that even if the same method is applied, it is difficult to connect the terminals or the reproducibility is poor. When the inventors investigated the cause, it was found that the conductive particles broke through the terminals (not provided with the reinforcing layer) on the substrate and destroyed the terminals.

On the other hand, in this invention, sufficient intensity | strength is provided to the terminal 6 because the terminal 6 has a reinforcement layer. As a result, the connection between the terminal 6 (first to third terminals 61 to 63) and the terminal of the driving IC can be performed even when ACF or ACP containing conductive particles having high hardness such as Ni particles is used. It can be done reliably.
The constituent material of the conductor pattern 7 may be any material as long as it has conductivity. For example, the same materials as those described as the constituent material of the pixel electrode 3 can be used. .

As will be described later, when the reinforcing layer 8 is formed using an electroless plating method, it is preferable that at least a portion corresponding to the terminal of the conductor pattern 7 is made of a catalytic metal having a catalytic function. . Thereby, although mentioned in full detail later, the process of attaching a catalyst to the surface of the conductor pattern 7 performed as pretreatment at the time of forming the reinforcing layer 8 by electroless plating can be omitted. As a result, the number of manufacturing processes can be reduced.
As such a catalyst metal, one or more of Ni, Cu, Co, Pd, Au, and Pt can be used in combination. All of these have high catalytic action.

  The thickness (average) of the conductor pattern 7 is slightly different depending on the constituent material of the conductor pattern 7 and is not limited, but is preferably about 10 to 500 nm, and more preferably about 50 to 200 nm. If the conductor pattern 7 is too thin, the bent portion of the wiring 5 may be broken when the flexible wiring board 1 is bent and used. Further, even if the conductor pattern 7 is made thicker than the upper limit, not only an effect can be expected, but cracks and wrinkles are likely to occur in the conductor pattern 7. A part of the conductor pattern 7 can also serve as the source / drain or gate electrode of the organic thin film transistor, but the film thickness of the conductor pattern 7 is optimized so that the transistor exhibits the required performance. The film thickness necessary for this is in the above-described range. It has been found that a film thickness exceeding this deteriorates the performance of the organic thin film transistor.

The constituent material of the reinforcing layer 8 may be any material as long as it has conductivity. For example, the same materials as those described as the constituent material of the pixel electrode 3 can be used.
As will be described later, when the reinforcing layer 8 is formed by the electroless plating method, a material that can be formed by the electroless plating method is selected.

Examples of such a material include Ni, Pd, Pt, Cu, Co, Au, and the like, and one or more of these can be used in combination. Any of these materials can be easily formed by an electroless plating method, and the resulting reinforcing layer 8 has high strength.
The thickness (average) of the reinforcing layer 8 is preferably about 3 to 50 μm, and more preferably about 5 to 20 μm. Thereby, sufficient strength can be imparted to the terminal 6 while preventing the terminal 6 from becoming unnecessarily thick.
Furthermore, at least the vicinity of the surface of the terminal 6 is preferably made of Au. Thereby, the oxidation of the terminal 6 can be prevented. Further, it is possible to perform the bonding with the terminal of the driving IC more reliably.
Such a flexible wiring board 1 can be manufactured as follows, for example.

<Method for manufacturing flexible wiring board>
FIG. 3 and FIG. 4 are views (longitudinal sectional views) for explaining a method of forming terminals and wiring portions, respectively. In the following description, the upper side in FIGS. 3 and 4 is referred to as “upper” and the lower side is referred to as “lower”.
The manufacturing method of the flexible wiring board 1 includes [1] a conductor pattern forming step, [2] a reinforcing layer forming step, and [3] a thin film transistor manufacturing step.
Hereinafter, these steps will be sequentially described.

[1] Conductor Pattern Formation Step First, the conductor pattern 7 is formed on the substrate 2. As shown in FIG. 1, the substrate 2 can be previously processed into a shape with protruding bands, and the formation process of the conductor pattern 7 can be performed. More preferably, the substrate 2 is a long sheet or roll. It is desirable to use a plastic sheet (an original plate before being divided into the substrates 2). Then, after the conductor pattern forming step, the reinforcing layer forming step, and the thin film transistor manufacturing step described below are completed, punching (dividing) into a target shape shown in FIG. 1 is performed. In addition, after the thin film transistor manufacturing process is completed, a later-described electrophoretic display portion is attached, and then punching can be performed.

Further, by treating the long plastic sheet as a sheet or roll, the productivity is remarkably improved, and the flexible wiring board of the present invention can be provided at a low cost. Furthermore, since a manufacturing facility that does not depend on the shape of the flexible wiring board can be prepared, it is possible to quickly cope with various shapes.
The conductor pattern 7 is formed in a shape corresponding to the wiring 5, the terminal 6, the source and drain electrodes provided in the TFT 4, and the pixel electrode 3.

The conductor pattern 7 can be obtained, for example, by forming a metal film 9 on the substrate 2 and then etching the metal layer 9 using a resist layer formed by a photolithography method or the like as a mask. .
First, the metal film 9 is formed on the substrate 2 (see FIG. 3A).

The metal film 9 is formed by, for example, chemical vapor deposition (CVD) such as plasma CVD, thermal CVD, laser CVD, dry plating such as vacuum deposition, sputtering, ion plating, electrolytic plating, immersion plating, electroless plating, or the like. It can be formed using a wet plating method, a thermal spraying method, a sol-gel method, a MOD method, a metal foil bonding, or the like.
Of these, the metal film 9 is particularly preferably formed using an electroless plating method. Thereby, the metal film 9 can be formed at low cost by a simple manufacturing apparatus and process without using a large-scale apparatus such as a vacuum apparatus.

Next, a resist material 11 ′ is applied (supplied) onto the metal film 9 (see FIG. 3B).
As a method of applying the resist material 11 ′ (resist material 13 ′ described later), for example, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, A dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an ink jet method, a microcontact printing method, and the like can be used, and one or more of these can be used in combination.

Two or more kinds of metal materials can be laminated (that is, the metal film 9 can have a multilayer laminated structure of two or more layers). For example, the adhesion of the metal film 9 can be improved by using a two-layer structure in which Au or Pt, Pd, and Ni are formed on a Cr or Ti underlayer.
Subsequently, after exposing through the photomask corresponding to the shape of the conductor pattern 7, it develops with a developing solution. As a result, a resist layer 11 patterned into a shape corresponding to the conductor pattern 7 is obtained (see FIG. 3C).

Note that the resist material used in the photolithography method may be either a negative resist material or a positive resist material.
Next, unnecessary portions of the metal film 9 are removed by etching using the resist layer 11 as a mask (see FIG. 3D).
Next, the conductor pattern 7 is obtained by removing the resist layer 11 (see FIG. 3E).

  This etching can be performed by combining one or more of physical etching methods such as plasma etching, reactive etching, beam etching, and light assisted etching, and chemical etching methods such as wet etching. Among these, it is preferable to use wet etching. Thus, etching can be performed with a simple apparatus and process without using a large-scale apparatus such as a vacuum apparatus.

Etching solutions used for wet etching include, for example, a solution containing ferric chloride (Ni or Cu etching), sulfuric acid, nitric acid, hydrochloric acid, aqua regia, potassium iodide / iodine mixed aqueous solution (gold etching), nitric acid Examples include dicerium ammon water solution (Cr etching).
As described above, by using a combination of photolithography and etching, the conductor pattern 7 with high dimensional accuracy can be easily and reliably formed.

[2] Step of forming reinforcing layer Next, the reinforcing layer 8 is formed at the end of the conductor pattern 7, that is, at the portion corresponding to the terminal 6 of the conductor pattern 7.
The reinforcing layer 8 can also be formed by the same method as the metal film 9 described above, but the reinforcing layer 8 is preferably formed using a plating method. Thereby, a reinforcing layer having a desired film thickness can be formed with high film forming accuracy without using a large-scale apparatus such as a vacuum apparatus.
Of the plating methods, it is more preferable to use an electroless plating method. Thereby, the reinforcing layer 8 can be formed with higher film forming accuracy.
In the following, a case where an electroless plating method is used as a method of forming the reinforcing layer 8 will be described as a representative.

[2-I] For example, a resist layer is formed by photolithography so as to cover a portion other than the portion corresponding to the terminal 6 of the conductor pattern 7.
First, as shown in FIG. 4 (f), a resist material 13 ′ is applied (supplied) on the substrate 2 so as to cover the conductor pattern 7, that is, on almost the entire surface of the substrate 2.
Subsequently, after exposing through the photomask corresponding to the shape of the terminal 6, it develops with a developing solution. As a result, as shown in FIG. 4G, a resist layer 13 patterned into a shape having a recess 131 in a portion corresponding to the terminal 6 is obtained.

In the recess 131, the conductor pattern 7 is exposed from the resist layer 13.
As this resist material, it is preferable to use a positively charged material containing a charge control agent. Thereby, the cationic surfactant used in the next step is not adsorbed on the resist layer 13 but is selectively adsorbed on the portion corresponding to the terminal 6 of the conductor pattern 7.
As such a resist material, for example, a commercial product such as “PMER series” manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used.

[2-II] Next, pretreatment for forming the plating film 12 is performed on the conductor pattern 7 exposed from the resist layer 13 in the recess 131.
This pretreatment is performed, for example, by bringing a solution containing a cationic surfactant (surfactant solution) into contact with the conductor pattern 7. Thereby, a cationic surfactant is adhered to the surface of the conductor pattern 7.

The surface of the conductor pattern 7 is positively charged by adhering the cationic surfactant, and the catalyst used in the electroless plating is easily adsorbed. As a result, the plated film 12 (reinforcing layer 8) to be formed is formed. ) And the conductor pattern 7 are improved.
Examples of the method of bringing the surfactant solution into contact with the conductor pattern 7 include a method of immersing the conductor pattern 7 in the surfactant solution (immersion method), and showering (spraying) the surfactant solution on the conductor pattern 7. In particular, it is preferable to use the dipping method. According to the dipping method, a large amount of the substrate 2 can be easily processed.

As described above, there are various methods for bringing the liquid into contact with the substrate 2. In the following steps, the case where the immersion method is used as a method for bringing the liquid into contact will be described as a representative.
Examples of the cationic surfactant include alkyl ammonium chloride, benzalkonium chloride, benzethonium chloride, stearic acid, and the like, and one or more of these can be used in combination.

The temperature of the surfactant solution during the treatment is preferably about 0 to 70 ° C, more preferably about 10 to 40 ° C.
Further, the treatment time of the conductor pattern 7 in the surfactant solution is preferably about 10 to 90 seconds, and more preferably about 30 to 60 seconds.
Here, for example, when the conductor pattern 7 is made of an oxide such as ITO, the surface of the conductor pattern 7 tends to be negatively charged. The catalyst is difficult to adhere. For this reason, it is particularly effective to perform the pretreatment as described above on the conductor pattern 7 made of oxide.
In this way, the pre-treated conductor pattern 7 is washed using, for example, pure water (ultra pure water), ion exchange water, distilled water, RO water, or the like.

[2-III] Next, the catalyst is adsorbed on the surface of the conductor pattern 7.
As the catalyst, one or more of Ni, Cu, Co, Pd, and Pt can be used in combination.
Of these, when Pd is used as the catalyst, the substrate 2 is immersed in a colloidal solution of a Pd alloy such as Sn—Pd or an ionic Pd catalyst such as palladium chloride, so that the Pd alloy or ions The system Pd catalyst is adsorbed on the surface of the conductor pattern 7. Then, Pd is exposed on the surface of the conductor pattern 7 by removing elements not involved in the catalyst.

For example, when using a Sn—Pd colloidal solution, the conductor pattern 7 is immersed in the colloidal solution and then immersed in the acid solution. As a result, Sn coordinated to Pd is dissolved and removed, and Pd is exposed on the surface of the conductor pattern 7.
As the acid solution, for example, a solution containing an acid such as HBF ₄ and a reducing agent such as glucose, or a solution obtained by further adding sulfuric acid to the solution can be used.

The temperature of the solution containing the catalyst in the treatment is preferably about 0 to 70 ° C, and more preferably about 10 to 40 ° C.
The treatment time of the conductor pattern 7 in the solution containing the catalyst is preferably about 10 seconds to 5 minutes, and more preferably about 20 seconds to 3 minutes.
On the other hand, the temperature of the acid solution during the treatment is preferably about 0 to 70 ° C, and more preferably about 10 to 40 ° C.

The treatment time of the substrate 2 in the acid solution is preferably about 10 seconds to 5 minutes, and more preferably about 30 seconds to 3 minutes.
Thus, the conductor pattern 7 to which the catalyst is adhered (adsorbed) is washed using, for example, pure water (ultra pure water), ion exchange water, distilled water, RO water, or the like.
In the case where at least the end portion of the conductor pattern 7, that is, the portion corresponding to the terminal 6 is composed of a metal material having catalytic properties as a main component, the conductor pattern 7 itself acts as a catalyst. [2-III] and the step [2-II] may be omitted.

[2-IV] Next, the substrate 2 is immersed in a plating solution, and as shown in FIG. 4 (i), a metal element is deposited in the recess 131 of the resist layer 13, and the terminal 6 of the conductor pattern 7 is thus deposited. The reinforcing layer 8 is formed in the corresponding part.
As the metal salt, for example, sulfate, nitrate and the like are preferably used.
Examples of the reducing agent include hydrazine, ammonium hypophosphite, sodium hypophosphite, and the like. Among these, those containing at least one of hydrazine and ammonium hypophosphite as a main component are preferable. By using these as reducing agents, the deposition rate of the plating film 12 becomes appropriate, and the film thickness can be easily controlled within the optimum film thickness range required for the reinforcing layer 8. The formed plating film 12 also has a uniform film thickness and good surface properties (high film surface morphology).

The content of the metal salt in the plating solution 10 (addition amount of the metal salt to the solvent) is preferably about 1 to 50 g / L, and more preferably about 5 to 25 g / L. If the content of the metal salt is too small, it may take a long time to form the plating film 12. On the other hand, even if the content of the metal salt is increased beyond the upper limit, no further increase in effect can be expected.
The content of the reducing agent in the plating solution 10 (the amount of the reducing agent added to the solvent) is preferably about 10 to 200 g / L, and preferably about 50 to 150 g / L. When there is too little content of a reducing agent, there exists a possibility that efficient reduction | restoration of a metal ion may become difficult depending on the kind etc. of reducing agent. On the other hand, even if the content of the reducing agent is increased beyond the upper limit, no further increase in effect can be expected.

It is preferable to mix (add) a pH adjusting agent (pH buffering agent) to the plating solution 10. As a result, it is possible to prevent or suppress the pH of the plating solution 10 from being lowered as the electroless plating progresses. As a result, the film formation rate is lowered and the composition and properties of the plating film 12 are changed. It can be effectively prevented.
Examples of the pH adjuster include various agents, and those having at least one of ammonia water, trimethylammonium hydride, sodium hydroxide, sodium carbonate and ammonium sulfide as a main component are preferable. Since these things are excellent in a buffering effect, the said effect is exhibited more notably by using these things as a pH adjuster.

As shown in FIG. 4I, when the substrate 2 on which the resist layer 13 is formed is immersed in the plating solution 10 as described above, the plating film 12 is formed in a portion corresponding to the terminal 6 on the conductor pattern 7. Is done.
The pH of the plating solution 10 during the treatment is preferably about 5 to 12, and preferably about 6 to 10.
The temperature of the plating solution 10 during the treatment is preferably about 30 to 90 ° C, and more preferably about 40 to 80 ° C.

The processing time of the substrate 2 in the plating solution 10 is preferably about 10 seconds to 5 minutes, and more preferably about 20 seconds to 3 minutes.
By setting the pH and temperature of the plating solution 10 and the processing time with the plating solution 10 within the above ranges, the film formation speed becomes particularly appropriate, and the plating film 12 having a uniform film thickness can be formed with high accuracy. it can.

The plating film 12 is formed by setting the plating conditions such as the working temperature (plating solution temperature), the working time (plating time), the amount of the plating solution, the pH of the plating solution, the number of times of plating (the number of turns). The thickness can be adjusted.
Further, for example, additives such as a complexing agent and a stabilizing agent may be appropriately added to the plating solution 10.

Examples of complexing agents include carboxylic acids such as ethylenediaminetetraacetic acid and acetic acid, oxycarboxylic acids such as tartaric acid and citric acid, aminocarboxylic acids such as glycine, amines such as triethanolamine, glycerin and sorbitol. And polyhydric alcohols.
Examples of the stabilizer include 2,2′-bipyridyl, cyanide, ferrocyan compound, phenanthroline, thiourea, mercaptobenzothiazole, thioglycolic acid, and the like.
In this way, the substrate 2 on which the plating film 12 is formed on the portion corresponding to the terminal 6 of the conductor pattern 7 is made of, for example, pure water (ultra pure water), ion exchange water, distilled water, RO water or the like. Use to wash.

[2-V] Next, the resist layer 13 is removed.
The removal of the resist layer 13 can be preferably performed by using a resist stripping solution, but may be performed by other physical etching methods such as plasma etching, reactive etching, beam etching, and light-assisted etching. It may be.
Thereby, as shown in FIG. 4J, the terminal 6 in which the reinforcing layer 8 is formed on the portion corresponding to the terminal 6 of the conductor pattern 7 can be obtained.

By using the electroless plating method as described above, it is possible to easily and reliably form the reinforcing layer 8 with high dimensional accuracy.
As a result, the terminal 6 can be made strong enough to be connected to the driving IC by ACF or ACP.
In the present embodiment, the reinforcing layer 8 is formed by the method using the electroless plating method, but the reinforcing layer 8 may be formed by using the electrolytic plating method.

When the electroless plating method is used, a short-circuit wire is provided in the vicinity of the portion corresponding to the terminal 6 of the conductor pattern 7 and placed in the electrolytic bath to form the reinforcing layer 8. You can remove the short-circuit wire later. According to the electrolytic plating method, the plating film can be electrically attached to the surface of the conductor pattern 7, so that there is an advantage that the reinforcing layer 8 can be formed in a shorter time.
Further, in the above [2-I] to [2-V], the method for applying the catalyst necessary for electroless plating onto the metal layer 9 (conductor pattern 7) has been described. However, the metal layer 9 (conductor) By using the pattern 7) itself as a catalyst, the reinforcing layer 8 can be formed more easily. This process will be described next.

[1 ′] Conductor pattern forming step Similar to the above step [1] using at least one of catalytic metal materials (catalytic metals), that is, Ni, Pt, Pd, Co, Cu, and Au. Thus, the conductor pattern 7 containing the catalyst metal as a main component is formed on the substrate 2.
[2 ′] Reinforcing Layer Formation Step [2′-I] In the same manner as in the step [2-I], a resist layer is formed so as to cover a portion other than the portion corresponding to the terminal 6 of the conductor pattern 7. .

[2′-IV] Next, in the same manner as in the above step [2-IV], as shown in FIG. 4 (i), a metal element is deposited in the recess 131 of the resist layer 13, thereby conducting the conductor pattern 7. A reinforcing layer 8 is formed in a portion corresponding to the terminal 6.
[2′-V] Next, the resist layer 13 is removed in the same manner as in the step [2′-V].
As described above, by forming the conductor pattern 7 with a catalytic metal material as a main component, the reinforcing layer 8 with high dimensional accuracy can be easily and reliably formed.

Next, when at least the vicinity of the surface of the reinforcing layer 8 is made of Au, the portion made of Au (Au layer) can be formed by, for example, a displacement plating method.
This displacement plating method is a method in which a metal component in a plating solution is replaced with or brought into contact with a base metal to be reduced and deposited on the surface.

In the following, a case where the reinforcing layer 8 having the Au layer is formed on the Ni layer will be described as a representative.
In this case, first, the substrate 2 is immersed in a Ni plating solution to grow a Ni film (Ni layer), then the substrate 2 is pulled up from the Ni plating solution, and then immersed in an Au plating solution. As a result, Au ions in the Au plating solution are replaced with Ni eluting on the surface of the Ni film, and an Au thin film (Au layer) is deposited on the surface of the Ni film.

The temperature of the Au plating solution during the treatment is preferably about 30 to 90 ° C. By setting such a temperature range, when the entire surface of the Ni film is covered with Au, the Au deposition (substitution plating) automatically stops (substantially simultaneously), and an Au thin film having a thickness of about 30 to 70 nm is usually formed. Obtainable.
Thereby, it can be set as the terminal 6 covered with the metal suitable for terminals.

[3] Thin Film Transistor Manufacturing Process Next, the organic semiconductor layer, the gate insulating layer, and the gate electrode are sequentially formed on the source electrode and the drain electrode formed in the conductor pattern forming process to complete the TFT 4.
The structure of the thin film transistor and the method for manufacturing the thin film transistor may be any method as long as they are manufactured using a known method, but an example will be described below.

First, an organic semiconductor layer is formed on the substrate 2 on which the source electrode and the drain electrode are formed so as to cover the source electrode and the drain electrode.
At this time, a channel region is formed between the source electrode and the drain electrode (region corresponding to the gate electrode).
For the organic semiconductor layer, a solution containing an organic polymer material or a precursor thereof is applied (supplied) on the substrate 2 so as to cover the source electrode and the drain electrode using, for example, a coating method, and then as necessary. The coating film can be formed by subjecting it to a post-treatment (for example, heating, infrared irradiation, application of ultrasonic waves, etc.).

Here, for example, the same method as mentioned in the application method of the resist material 11 ′ can be used for the application of the solution.
Note that the organic semiconductor layer may be formed at least in a region (channel region) between the source electrode and the drain electrode so as to be in contact therewith. By selectively forming an organic semiconductor layer in the channel region, when a plurality of TFTs 4 are arranged in parallel on the same substrate, generation of leakage current, generation of crosstalk between elements, and the like can be suppressed. . Moreover, the usage-amount of organic-semiconductor material can be reduced and manufacturing cost can also be reduced.
In addition, when using a low molecular thing as an organic-semiconductor material, an organic-semiconductor layer can also be formed using a vacuum evaporation method etc., for example.

Next, a gate insulating layer is formed on the organic semiconductor layer.
For example, when an organic polymer material (resin material) is used as a constituent material (insulating material) of the gate insulating layer, the gate insulating layer can be formed in the same manner as the organic semiconductor layer.
Next, a gate electrode is formed over the gate insulating layer.
For example, when an organic polymer material (resin material) is used as a constituent material (conductive material) of the gate electrode, the gate electrode can be formed in the same manner as the organic semiconductor layer.

Moreover, when using various metal materials as an electrode material, a gate electrode can be formed as follows, for example.
First, a metal film (metal layer) is formed over the gate insulating layer. This includes, for example, chemical vapor deposition (CVD) such as plasma CVD, thermal CVD, and laser CVD, vacuum deposition, sputtering (low temperature sputtering), dry plating methods such as ion plating, electrolytic plating, immersion plating, and electroless plating. It can be formed by a wet plating method such as a thermal spraying method, a sol-gel method, a MOD method, or a metal foil bonding.

A resist material is applied (supplied) onto the metal film. Subsequently, after exposing through the photomask corresponding to the shape of a gate electrode, it develops with a developing solution. Thereby, a resist layer patterned into a shape corresponding to the gate electrode is obtained.
Using this resist layer as a mask, unnecessary portions of the metal film are removed by etching. For this etching, the same method as mentioned for the conductor pattern 7 can be used.

Thereafter, the gate electrode is obtained by removing the resist layer using, for example, a resist stripping solution.
Through the steps as described above, a top gate TFT 4 in which the source electrode and the drain electrode are provided closer to the substrate 2 than the gate electrode through the gate insulating layer is obtained.
Next, a connection line connecting the gate electrode and the wiring 51 is formed.

This connection line can be formed, for example, by performing a heat treatment after patterning the metal colloid liquid by an ink jet method.
The above description of the manufacturing process shows a method for manufacturing a flexible wiring board including a thin film transistor based on a top gate structure. Similarly, a flexible wiring substrate having a bottom-gate thin film transistor can be manufactured.
In this case, for example, it can be produced by the following methods [A] and [B].

[A] First, the conductor pattern 7 is formed on the substrate 2.
The conductor pattern 7 is formed in a shape corresponding to the wiring 5, the terminal 6, and the gate electrode provided in the TFT 4.
Next, the reinforcing layer 8 is formed on the end portion of the conductor pattern 7, that is, the portion corresponding to the terminal 6 of the conductor pattern 7.
Next, a gate insulating layer, a source electrode and a drain electrode, and an organic semiconductor layer are sequentially formed on the gate electrode formed in the conductor pattern forming step to complete the TFT 4.

[B] First, the conductor pattern 7 is formed on the substrate 2.
The conductor pattern 7 is formed in a shape corresponding to the wiring 5, the terminal 6, and the gate electrode provided in the TFT 4.
Next, a gate insulating layer, a source electrode, and a drain electrode are sequentially formed on the gate electrode formed in the conductor pattern forming step.

Next, the reinforcing layer 8 is formed on the end portion of the conductor pattern 7, that is, the portion corresponding to the terminal 6 of the conductor pattern 7.
Next, an organic semiconductor layer is formed so as to cover the source electrode and the drain electrode, and the TFT 4 is completed.
The flexible wiring board 1 is manufactured through the steps as described above.

Here, FIG. 5 shows another configuration example of the flexible wiring board 1.
The flexible wiring board 1 shown in FIG. 5 is different from the flexible wiring board 1 shown in FIG.
That is, the flexible wiring board 1 of FIG. 1 has a shape in which one band-like second portion 22 protrudes from the first portion 21 to the side.
On the other hand, the flexible wiring board 1 of FIG. 5 has a shape in which a plurality of rectangular second portions 22 protrude laterally from the first portion at substantially equal intervals. Thereby, the flexible wiring board 1 on which a plurality of driving ICs, RAMs, ROMs, FRAMs and the like can be mounted can be obtained.

<Electronic device>
Next, an electrophoretic apparatus will be described as an example of an electronic device in which the flexible wiring board 1 as described above is incorporated.
FIG. 6 is a longitudinal sectional view showing an embodiment when the electronic device of the present invention is applied to an electrophoretic display device.
The electrophoretic display device 20 shown in FIG. 6 includes a flexible wiring board 1 and an electrophoretic display unit 25 provided on the flexible wiring board 1.

As shown in FIG. 6, the electrophoretic display unit 25 includes a transparent substrate 251, a transparent electrode (common electrode) 252, a microcapsule 40, and a binder material 45.
A transparent electrode 252 is laminated on the transparent substrate 251, and the microcapsule 40 is fixed on the transparent electrode 252 with a binder material 45.
Further, the electrophoretic display unit 25 and the flexible wiring substrate 1 are bonded via a binder material 45.

The pixel electrodes 3 are divided so as to be regularly arranged in a matrix, that is, vertically and horizontally.
In each capsule 40, an electrophoretic dispersion liquid 400 includes a plurality of types of electrophoretic particles having different characteristics, and in this embodiment, two types of electrophoretic particles 401 and 402 having different charges and colors (hues). Is enclosed.

Further, the terminals of the driving IC are connected to the terminals 6 (terminals 61 to 63) of the flexible wiring board 1, whereby the driving IC is mounted on the flexible wiring board 1.
In such an electrophoretic display device 20, when a selection signal (selection voltage) is supplied to one or a plurality of wirings 51, the TFT 4 connected to the wiring 51 to which the selection signal (selection voltage) is supplied is turned on. It becomes.

Thereby, the wiring 52 connected to the TFT 4 and the pixel electrode 3 are substantially conducted. At this time, if desired data (voltage) is supplied to the wiring 52, this data (voltage) is supplied to the pixel electrode 3.
At this time, an electric field is generated between the pixel electrode 3 and the transparent electrode 252, and the electrophoretic particles 401, 402 have either one of the electrophoretic particles 401, 402 depending on the direction and strength of the electric field, the characteristics of the electrophoretic particles 401, 402, etc. Electrophoresis in the direction of the electrode.

On the other hand, when the supply of the selection signal (selection voltage) to the wiring 51 is stopped from this state, the TFT 4 is turned off, and the wiring 52 connected to the TFT 4 and the pixel electrode 3 are in a non-conductive state.
Therefore, the display surface side (transparent substrate) of the electrophoretic display device 20 is provided with a desired signal by appropriately combining the supply and stop of the selection signal to the wire 51 or the supply and stop of data to the wire 52. An image (information) can be displayed.

In particular, in the electrophoretic display device 20 of the present embodiment, it is possible to display a multi-tone image by making the colors of the electrophoretic particles 401 and 402 different.
In addition, since the electrophoretic display device 20 of the present embodiment has the flexible wiring substrate 1 of the present invention, the TFT 4 connected to the specific wiring 51 can be selectively turned on / off. Since the problem of talk hardly occurs and the speed of circuit operation can be increased, a high-quality image (information) can be obtained.

In addition, since the electrophoretic display device 20 of the present embodiment operates with a low driving voltage, power saving can be achieved.
In the electrophoretic display device 20, the flexible wiring substrate 1 and the electrophoretic display unit 25 are prepared in advance, and the pixel electrode 3 of the flexible wiring substrate 1 and the microcapsules of the electrophoretic display unit 25 are formed. For example, the flexible wiring board 1 and the electrophoretic display unit 25 can be manufactured by being heated while being pressed while being in contact with each other.
Note that the electronic device of the present invention is not limited to the application to the electrophoretic display device 20, and can be applied to a liquid crystal display device, an organic or inorganic EL display device, and the like.

<Electronic equipment>
Such an electrophoretic display device 20 can be incorporated into various electronic devices. Hereinafter, the electronic apparatus of the present invention including the electrophoretic display device 20 will be described.
<< Electronic Paper >>
First, an embodiment when the electronic apparatus of the present invention is applied to electronic paper will be described.

FIG. 7 is a perspective view showing an embodiment when the electronic apparatus of the present invention is applied to electronic paper.
An electronic paper 600 shown in this figure includes a main body 601 composed of a rewritable sheet having the same texture and flexibility as paper, and a display unit 602.
In such an electronic paper 600, the display unit 602 includes the electrophoretic display device 20 as described above.

<< Display >>
Next, an embodiment when the electronic apparatus of the present invention is applied to a display will be described.
8A and 8B are diagrams showing an embodiment in which the electronic apparatus of the present invention is applied to a display. FIG. 8A is a cross-sectional view and FIG. 8B is a plan view.
A display 800 shown in this figure includes a main body 801 and an electronic paper 600 that is detachably attached to the main body 801. The electronic paper 600 has the same configuration as described above, that is, the configuration shown in FIG.

  The main body 801 has an insertion port 805 into which the electronic paper 600 can be inserted on the side (right side in the drawing), and two pairs of conveying rollers 802a and 802b are provided inside. When the electronic paper 600 is inserted into the main body 801 through the insertion port 805, the electronic paper 600 is installed in the main body 801 in a state of being sandwiched between the pair of conveyance rollers 802a and 802b.

  Further, a rectangular hole 803 is formed on the display surface side of the main body 801 (the front side in the drawing (b) below), and a transparent glass plate 804 is fitted into the hole 803. Thereby, the electronic paper 600 installed in the main body 801 can be viewed from the outside of the main body 801. That is, in the display 800, the display surface is configured by visually recognizing the electronic paper 600 installed in the main body 801 on the transparent glass plate 804.

In addition, a terminal portion 806 is provided at the leading end portion (left side in the drawing) of the electronic paper 600, and the terminal portion with the electronic paper 600 installed on the main body portion 801 is provided inside the main body portion 801. A socket 807 to which 806 is connected is provided. A controller 808 and an operation unit 809 are electrically connected to the socket 807.
In such a display 800, the electronic paper 600 is detachably installed on the main body 801, and can be carried and used while being detached from the main body 801.

In such a display 800, the electronic paper 600 is configured by the electrophoretic display device 20 as described above.
Note that the electronic apparatus of the present invention is not limited to the application to the above, and for example, a television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, an electronic Examples include newspapers, word processors, personal computers, workstations, videophones, POS terminals, and devices equipped with touch panels. The electrophoretic display device 20 can be applied to the display units of these various electronic devices. is there.

As described above, the flexible wiring board, the manufacturing method of the flexible wiring board, the electronic device, and the electronic apparatus of the present invention have been described, but the present invention is not limited to these.
Moreover, this invention can also add the process of 1 or 2 or more arbitrary objectives to the process as mentioned above as needed.
In addition, the configuration of each part of the flexible wiring board, the manufacturing method of the flexible wiring board, the electronic device, and the electronic apparatus of the present invention can be replaced with any one that can exhibit the same function, or Arbitrary configurations can also be added.
Moreover, in the said embodiment, although the thin film transistor was typically demonstrated as a switching element, a switching element is not limited to this, For example, a thin film diode (TFD) etc. may be sufficient.

It is a perspective view which shows embodiment of the flexible wiring board of this invention. It is a longitudinal cross-sectional view in the AA line in FIG. It is a figure (longitudinal sectional view) for demonstrating the method of forming the part of a terminal and wiring. It is a figure (longitudinal sectional view) for demonstrating the method of forming the part of a terminal and wiring. It is a top view which shows the other structural example of a flexible wiring board. It is a longitudinal cross-sectional view which shows embodiment at the time of applying the flexible wiring board of this invention to an electrophoretic display apparatus. It is a perspective view which shows embodiment at the time of applying the electronic device of this invention to electronic paper. It is a figure which shows embodiment at the time of applying the electronic device of this invention to a display, (a) is sectional drawing, (b) is a top view.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Flexible wiring board 2 ... Substrate 21 ... 1st part 22 ... 2nd part 3 ... Pixel electrode 4 ... Thin-film transistor (switching element) 5 ... Wiring 51 ... 1st wiring 52 ... 2nd wiring 53 ... 3rd wiring 6 ... Terminal 61 ... 1st terminal 62 ... 2nd terminal 63 ... 3rd terminal 64 ... 4th terminal 7 ... Conductivity Body pattern 8 ... Reinforcement layer 9 ... Metal film 10 ... Plating solution 11, 13 ... Resist layer 11 ', 13' ... Resist material 12 ... Plating film 20 ... Electrophoretic display device 25 ... Electrophoresis Display unit 251 ... Transparent substrate 252 ... Transparent electrode (common substrate) 40 ... Microcapsule 400 ... Electrophoretic dispersion liquid 401, 402 ... Electrophoretic particles 45 ... Binder material 600 ... Electronic paper 601 ... Body602 ... Display unit 800 ... Display 801 ... Main body 802a, 802b ... Conveying roller pair 803 ... Hole 804 ... Transparent glass plate 805 ... Insertion slot 806 ... Terminal part 807 ... Socket 808 ... Controller 809 Operation unit

Claims (16)

A flexible substrate; a plurality of switching elements; a wiring at least partially connected to the switching element; and a plurality of terminals connected to the wiring; the switching element, the wiring, and the wiring Any of the terminals is a flexible wiring board provided on the board,
The terminal is electrically connected to a terminal included in at least one of an external device and a driving IC via conductive particles contained in an anisotropic conductive film or an anisotropic conductive paste,
Comprising said wiring integrally formed portions, and a reinforcing layer having obtained conductive provided corresponding to said integrally formed part,
A flexible wiring board , wherein a thickness of a portion integrally formed with the wiring is 10 to 500 nm, and a thickness of the reinforcing layer is set to 3 to 50 μm . The substrate has a first portion provided with the switching element, and a strip-shaped second portion protruding laterally from the first portion,
The flexible wiring board according to claim 1, wherein at least a part of terminals of the flexible wiring board is provided in the second portion.   The flexible wiring board according to claim 2, wherein the first portion and the second portion are integrally formed.   The flexible wiring board according to claim 2, wherein the flexible wiring board is used in a bent or curved state near a boundary portion between the first portion and the second portion.   The flexible wiring board according to claim 1, wherein the switching element is a thin film transistor.   6. The flexible wiring substrate according to claim 1, wherein the thin film transistor is an organic thin film transistor having a semiconductor layer mainly composed of an organic semiconductor material. Flexible wiring board according to the terminal that flexible wiring board having the any one of the near at least the surface of claims 1 is composed of Au 6. The flexible wiring board according to claim 7 , wherein the terminal of the flexible wiring board has a layer made of Au on the opposite side of the board, and the layer is formed by a displacement plating method. substrate. A method of manufacturing a flexible wiring board for producing a flexible wiring board according to any one of claims 1 to 8,
Forming a conductor pattern having portions corresponding to the terminals of the wiring and the flexible wiring board ;
Characterized in that the portion corresponding to the terminal to which the flexible wiring board of the conductive pattern has, to form a reinforcing layer having the conductivity, and a step of obtaining a terminal to which the flexible wiring board has A method for manufacturing a flexible wiring board. The method for manufacturing a flexible wiring board according to claim 9 , wherein the reinforcing layer is formed by a plating method. The method for manufacturing a flexible wiring board according to claim 10 , wherein the plating method is an electroless plating method. The conductor pattern is flexible wire according to any one of at least the flexible wiring to substrate portions corresponding to the terminals of the claims 9 to form a catalytic metal as a main material having a catalytic function 11 A method for manufacturing a substrate. The method for manufacturing a flexible wiring board according to claim 12 , wherein the catalytic metal is mainly composed of at least one of Ni, Cu, Co, Pd, Au, and Pt. On the sheet-like or roll-like original plate before dividing the substrate, after sequentially forming a conductive pattern and the reinforcing layer, the original plate, any one of claims 9 to 13 into a plurality of said substrates The manufacturing method of the flexible wiring board as described in any one of. An electronic device characterized by having a flexible wiring board according to any one of claims 1 to 8. An electronic apparatus comprising the electronic device according to claim 15 .

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