JP4250193B2

JP4250193B2 - Semiconductor device for DC / DC converter

Info

Publication number: JP4250193B2
Application number: JP2007318290A
Authority: JP
Inventors: 徹也川島; 彰三島
Original assignee: Renesas Technology Corp
Current assignee: Renesas Technology Corp
Priority date: 2007-12-10
Filing date: 2007-12-10
Publication date: 2009-04-08
Anticipated expiration: 2027-12-10
Also published as: JP2008091945A

Abstract

<P>PROBLEM TO BE SOLVED: To improve heat dissipation property of a semiconductor device in which a plurality of semiconductor chips are packaged. <P>SOLUTION: On a plate-like lead part 5 of an input side, a power MOSFET chip 2 for controlling is arranged. A drain terminal DT1 is formed at the back of the chip. On a main surface, a source terminal ST1 and gate terminal GT1 are formed. The source terminal ST1 and a plate-like lead part 12 for the source are connected. On a plate-like lead part 6 of an output side, a power MOSFET chip 3 for synchronization is arranged. A drain terminal DT2 is formed at the back of the chip. The plate-like lead part 6 of the output side is connected with the drain terminal DT2. On a main surface of the power MOSFET chip 3 for synchronization, a source terminal ST2 and gate terminal GT2 are formed. The source terminal ST2 and a plate-like lead part 13 for the source are connected. With plate-like lead parts 12 and 13 for the source being exposed, heat dissipation property of a MCM1 can be improved. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ＤＣ／ＤＣコンバータ用半導体装置に関し、特に、複数の半導体チップが封止体に封入されたＤＣ／ＤＣコンバータ用半導体装置に適用して有効な技術に関する。 The present invention relates to a DC / DC converter semiconductor device , and more particularly to a technique effective when applied to a DC / DC converter semiconductor device in which a plurality of semiconductor chips are sealed in a sealing body.

従来の半導体装置では、各半導体チップの表面にはヒートシンク（第１の導体部材）の裏面が半田を介して接合されており、各半導体チップの裏面には半田を介して第２の導体部材の表面が接合されている。また、ヒートシンクの表面には半田を介して第３の導体部材の裏面が接合されており、さらに、所定の半導体チップのランドと制御用端子とがボンディングワイヤを介して電気的に接続されている。各半導体チップ、ヒートシンク、第２の導体部材の表面、第３の導体部材の裏面、ボンディングワイヤおよび制御用端子の一部は樹脂により封止されている（例えば、特許文献１参照）。 In the conventional semiconductor device, the back surface of the heat sink (first conductor member) is bonded to the surface of each semiconductor chip via solder, and the second conductor member is connected to the back surface of each semiconductor chip via solder. The surfaces are joined. Further, the back surface of the third conductor member is joined to the surface of the heat sink via solder, and a land of a predetermined semiconductor chip and a control terminal are electrically connected via a bonding wire. . Each semiconductor chip, the heat sink, the surface of the second conductor member, the back surface of the third conductor member, the bonding wires, and a part of the control terminal are sealed with resin (for example, see Patent Document 1).

また、前記半導体装置では、第２の導体部材の裏面に、平板状の絶縁部材を介して、外部冷却部材を当接させて、さらに放熱を促すようにしている（例えば、特許文献２参照）。
特開２００２−１１０８９３号公報（図１）特開２００３−４６０３６号公報（図１） In the semiconductor device, an external cooling member is brought into contact with the back surface of the second conductor member via a flat insulating member to further promote heat dissipation (see, for example, Patent Document 2). .
Japanese Patent Laid-Open No. 2002-110893 (FIG. 1) Japanese Patent Laid-Open No. 2003-46036 (FIG. 1)

近年、半導体装置の高集積化や小型化が進められており、特に複数の半導体チップを絶縁材料により封止した半導体装置は、ＭＣＭ（Multi-Chip-Module)と呼ばれ、開発が行われている。 In recent years, semiconductor devices have been highly integrated and miniaturized. In particular, a semiconductor device in which a plurality of semiconductor chips are sealed with an insulating material is called an MCM (Multi-Chip-Module) and has been developed. Yes.

前記ＭＣＭの適用例の１つに、電源回路などに用いられるスイッチング回路がある。その中でも絶縁型ＤＣ／ＤＣコンバータはパーソナルコンピュータなどの情報機器に広く用いられており、これらの製品は、ＣＰＵ（Central Processing Unit)などの大電流化や高周波数化に伴い、高効率化および小型化が求められる。 One example of application of the MCM is a switching circuit used in a power supply circuit or the like. In particular, isolated DC / DC converters are widely used in information equipment such as personal computers. These products are becoming more efficient and smaller in size as the CPU (Central Processing Unit) and the like increase in current and frequency. Is required.

ＤＣ／ＤＣコンバータは、制御用と同期用のパワーＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor)と、これらのＯＮ／ＯＦＦを行うドライバＩＣ（Integrated Circuit）と、その他チョークコイルやコンデンサなどによって構成されるが、一般にＤＣ／ＤＣコンバータ用ＭＣＭでは、２つのパワーＭＯＳＦＥＴと１つのドライバＩＣが１つのパッケージに封入されている。 The DC / DC converter includes a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for control and synchronization, a driver IC (Integrated Circuit) for turning these on and off, and a choke coil and a capacitor. In general, in an MCM for a DC / DC converter, two power MOSFETs and one driver IC are enclosed in one package.

このように複数の半導体チップを１つのパッケージ（封止体）に封入する目的は、実装面積の低減に加えて、回路上の寄生インダクタンスや寄生抵抗成分を低減することにある。 Thus, the purpose of enclosing a plurality of semiconductor chips in one package (sealing body) is to reduce the parasitic inductance and parasitic resistance components on the circuit in addition to reducing the mounting area.

なお、電源回路の大電流化や高周波数化のため、これらの寄生成分が原因となる損失は大きく、それを抑えるためには、各チップ間、ドライバＩＣ−ＭＯＳＦＥＴ間、出力端子−負荷間の配線パターンを短くする必要がある。そのため、ドライバＩＣとＭＯＳＦＥＴが近い位置に封入され、電源回路を構成する半導体素子を１パッケージとすることで負荷の直近に実装できる電源用ＭＣＭは、今後の電源装置の主流になると期待されている。 The loss caused by these parasitic components is large due to the increase in current and frequency of the power supply circuit. In order to suppress the loss, it is necessary to suppress each chip, between the driver IC and MOSFET, and between the output terminal and the load. It is necessary to shorten the wiring pattern. Therefore, the MCM for power supply that can be mounted in the immediate vicinity of the load by enclosing the driver IC and the MOSFET in a close position and making the semiconductor element constituting the power supply circuit in one package is expected to become the mainstream of future power supply devices. .

つまり、ＭＣＭによる実装では、従来の個別にパッケージした各素子をプリント基板上に配置する実装に比べて配線距離が短くなり、寄生インダクタンスや寄生抵抗は大幅に減少しており、低損失な回路が実現できる。 In other words, MCM mounting reduces the wiring distance and parasitic inductance and resistance significantly compared to the conventional mounting where each individually packaged element is placed on a printed circuit board, resulting in a low-loss circuit. realizable.

しかしながら、ＭＣＭでは、複数の半導体チップが１パッケージ化されることにより、実装面積は低減されるが、それと引き換えに放熱性が減少することが問題となる。 However, in the MCM, the mounting area is reduced by packaging a plurality of semiconductor chips into one package, but there is a problem in that heat dissipation is reduced in exchange for that.

また、本発明者が検討した図１６の比較例に示すように、ＭＣＭでは、チップ−フレーム間の主要な電流経路をワイヤで電気的に接続しているため、全体の寄生成分の中でワイヤ部分は大きな割合を占めており、このワイヤ部分での抵抗やインダクタンスの寄生成分の増加が問題となる。 Further, as shown in the comparative example of FIG. 16 examined by the present inventor, in the MCM, the main current path between the chip and the frame is electrically connected by the wire, so that the wire is included in the entire parasitic component. The portion occupies a large proportion, and an increase in parasitic components of resistance and inductance in the wire portion becomes a problem.

本発明の目的は、電気的特性の向上を図るＤＣ／ＤＣコンバータ用半導体装置を提供することにある。 An object of the present invention is to provide a semiconductor device for a DC / DC converter that improves electrical characteristics.

また、本発明のその他の目的は、放熱性の向上を図るＤＣ／ＤＣコンバータ用半導体装置を提供することにある。 Another object of the present invention is to provide a DC / DC converter semiconductor device that improves heat dissipation.

本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。 The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、以下のとおりである。 Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

すなわち、本発明は、一つのパッケージに形成されるＤＣ／ＤＣコンバータ用半導体装置であって、入力側板状導体部材、接地側板状導体部材および出力側板状導体部材と、前記入力側板状導体部材の上部に形成される第１の半導体チップと、前記接地側板状導体部材の上部に形成される第２の半導体チップとを有し、前記第１の半導体チップの主面にソース端子およびゲート端子が形成され、前記第１の半導体チップの裏面にドレイン端子が形成され、前記第２の半導体チップは、前記第１の半導体チップに対して表裏面反対の向きで配置され、前記第２の半導体チップの主面にドレイン端子が形成され、前記第２の半導体チップの裏面にソース端子が形成され、前記第１の半導体チップのソース端子、前記第２の半導体チップのドレイン端子および前記出力側板状導体部材の上部に一つの導体部材が形成され、前記導体部材は、前記第１の半導体チップのソース端子、前記第２の半導体チップのドレイン端子および前記出力側板状導体部材に電気的に接続され、前記第１の半導体チップのソース端子にワイヤが接続され、前記入力側板状導体部材、接地側板状導体部材および出力側板状導体部材は、前記パッケージの裏面に形成され、前記入力側板状導体部材は、前記第１の半導体チップのドレイン端子に電気的に接続され、前記接地側板状導体部材は、前記第２の半導体チップのソース端子に電気的に接続されるものである。
また、本発明は、一つのパッケージに形成されるＤＣ／ＤＣコンバータ用半導体装置であって、入力側板状導体部材、接地側板状導体部材および出力側板状導体部材と、前記入力側板状導体部材の上部に形成される第１の半導体チップと、前記接地側板状導体部材の上部に形成される第２の半導体チップとを有し、前記第１の半導体チップの主面にソース端子およびゲート端子が形成され、前記第１の半導体チップの裏面にドレイン端子が形成され、前記第２の半導体チップは、前記第１の半導体チップに対して表裏面反対の向きで配置され、前記第２の半導体チップの主面にドレイン端子が形成され、前記第２の半導体チップの裏面にソース端子が形成され、前記第１の半導体チップのソース端子、前記第２の半導体チップのドレイン端子および前記出力側板状導体部材の上部に一つの導体部材が形成され、前記導体部材は、前記第１の半導体チップのソース端子、前記第２の半導体チップのドレイン端子および前記出力側板状導体部材に電気的に接続され、前記第１の半導体チップのゲート端子にワイヤが接続され、前記入力側板状導体部材、接地側板状導体部材および出力側板状導体部材は、前記パッケージの裏面に形成され、前記入力側板状導体部材は、前記第１の半導体チップのドレイン端子に電気的に接続され、前記接地側板状導体部材は、前記第２の半導体チップのソース端子に電気的に接続されるものである。 That is, the present invention is a DC / DC converter semiconductor device formed in one package, and includes an input-side plate-like conductor member, a ground-side plate-like conductor member, an output-side plate-like conductor member, and the input-side plate-like conductor member. A first semiconductor chip formed on an upper portion; and a second semiconductor chip formed on an upper portion of the ground-side plate-like conductor member. A source terminal and a gate terminal are provided on a main surface of the first semiconductor chip. The drain terminal is formed on the back surface of the first semiconductor chip, and the second semiconductor chip is disposed in a direction opposite to the front and back surfaces with respect to the first semiconductor chip. A drain terminal is formed on the main surface of the first semiconductor chip, a source terminal is formed on the rear surface of the second semiconductor chip, a source terminal of the first semiconductor chip, and a drain of the second semiconductor chip. One conductor member is formed in an upper portion of the child and the output side plate-shaped conductor member, the conductive member is connected between the source terminal of the first semiconductor chip, the second semiconductor chip and a drain terminal of the output side plate-shaped conductor member Electrically connected to a source terminal of the first semiconductor chip, the input side plate-like conductor member, the ground side plate-like conductor member and the output side plate-like conductor member are formed on the back surface of the package, The input side plate-like conductor member is electrically connected to the drain terminal of the first semiconductor chip, and the ground side plate-like conductor member is electrically connected to the source terminal of the second semiconductor chip. is there.
The present invention is also a DC / DC converter semiconductor device formed in a single package, comprising an input side plate-like conductor member, a ground side plate-like conductor member, an output side plate-like conductor member, and the input side plate-like conductor member. A first semiconductor chip formed on an upper portion; and a second semiconductor chip formed on an upper portion of the ground-side plate-like conductor member. A source terminal and a gate terminal are provided on a main surface of the first semiconductor chip. The drain terminal is formed on the back surface of the first semiconductor chip, and the second semiconductor chip is disposed in a direction opposite to the front and back surfaces with respect to the first semiconductor chip. A drain terminal is formed on the main surface of the first semiconductor chip, a source terminal is formed on the rear surface of the second semiconductor chip, a source terminal of the first semiconductor chip, and a drain terminal of the second semiconductor chip. One conductor member is formed in an upper portion of the spare the output side plate-shaped conductor member, the conductive member, the source terminal of the first semiconductor chip, the drain terminal and the output side plate-shaped conductor member of said second semiconductor chip Electrically connected, a wire is connected to the gate terminal of the first semiconductor chip, the input side plate-like conductor member, the ground side plate-like conductor member and the output side plate-like conductor member are formed on the back surface of the package, The input side plate-like conductor member is electrically connected to the drain terminal of the first semiconductor chip, and the ground side plate-like conductor member is electrically connected to the source terminal of the second semiconductor chip. .

また、本発明は、一つのパッケージに形成されるＤＣ／ＤＣコンバータ用半導体装置であって、入力側の板状の導体部材に電気的に接続される第１の半導体チップと、接地側の板状の導体部材に電気的に接続される第２の半導体チップとを有し、前記第１の半導体チップの主面にソース端子およびゲート端子が形成され、前記第１の半導体チップの裏面にドレイン端子が形成され、前記第２の半導体チップの主面にドレイン端子が形成され、前記第２の半導体チップの裏面にソース端子が形成され、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子の上部に一つの導体部材が形成され、前記導体部材は、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子に電気的に接続され、前記第１の半導体チップのソース端子及びゲート端子にワイヤが接続されるものである。
また、本発明は、一つのパッケージに形成されるＤＣ／ＤＣコンバータ用半導体装置であって、入力側の板状の導体部材に電気的に接続される第１の半導体チップと、接地側の板状の導体部材に電気的に接続される第２の半導体チップと、前記第１および第２の半導体チップを制御するドライバＩＣチップとを有し、前記第１の半導体チップの主面にソース端子が形成され、前記第１の半導体チップの裏面にドレイン端子が形成され、前記第２の半導体チップの主面にドレイン端子が形成され、前記第２の半導体チップの裏面にソース端子が形成され、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子の上部に一つの導体部材が形成され、前記導体部材は、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子に電気的に接続され、前記第１の半導体チップのソース端子に前記ドライバＩＣチップと電気的に接続するためのワイヤが接続されるものである。
また、本発明は、一つのパッケージに形成されるＤＣ／ＤＣコンバータ用半導体装置であって、入力側の板状の導体部材に電気的に接続される第１の半導体チップと、接地側の板状の導体部材に電気的に接続される第２の半導体チップと、前記第１および第２の半導体チップを制御するドライバＩＣチップとを有し、前記第１の半導体チップの主面にソース端子が形成され、前記第１の半導体チップの裏面にドレイン端子が形成され、前記第２の半導体チップは、前記第１の半導体チップに対して表裏面反対の向きで配置され、前記第２の半導体チップの主面にドレイン端子が形成され、前記第２の半導体チップの裏面にソース端子が形成され、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子の上部に一つの導体部材が形成され、前記導体部材は、前記第１の半導体チップのソース端子および前記第２の半導体チップのドレイン端子に電気的に接続され、前記ドライバＩＣチップは前記第１の半導体チップのソース端子と電気的に接続するための端子を備えるものである。 The present invention is also a DC / DC converter semiconductor device formed in one package, the first semiconductor chip being electrically connected to the input side plate-like conductor member, and the ground side plate And a second semiconductor chip electrically connected to the conductor member, a source terminal and a gate terminal are formed on the main surface of the first semiconductor chip, and a drain is formed on the back surface of the first semiconductor chip. A terminal is formed, a drain terminal is formed on a main surface of the second semiconductor chip, a source terminal is formed on a back surface of the second semiconductor chip, and the source terminal of the first semiconductor chip and the second terminal one conductor member is formed in an upper portion of the drain terminals of the semiconductor chip, the conductor member is electrically connected is the drain terminal of the first semiconductor chip source terminal and the second semiconductor chip , Wire to the source terminal and gate terminal of the first semiconductor chip is to be connected.
The present invention is also a DC / DC converter semiconductor device formed in one package, the first semiconductor chip being electrically connected to the input side plate-like conductor member, and the ground side plate A second semiconductor chip electrically connected to the conductor member, and a driver IC chip for controlling the first and second semiconductor chips, and a source terminal on the main surface of the first semiconductor chip A drain terminal is formed on the back surface of the first semiconductor chip, a drain terminal is formed on the main surface of the second semiconductor chip, and a source terminal is formed on the back surface of the second semiconductor chip, one conductor member is formed in an upper portion of the drain terminal of the first semiconductor chip source terminal and the second semiconductor chip, said conductive member, a source terminal and said first semiconductor chip It is electrically connected to the drain terminal of the second semiconductor chip, the first of the source terminals of the semiconductor chip driver IC chip and electrically wire for connection is intended to be connected.
The present invention is also a DC / DC converter semiconductor device formed in one package, the first semiconductor chip being electrically connected to the input side plate-like conductor member, and the ground side plate A second semiconductor chip electrically connected to the conductor member, and a driver IC chip for controlling the first and second semiconductor chips, and a source terminal on the main surface of the first semiconductor chip And a drain terminal is formed on the back surface of the first semiconductor chip, and the second semiconductor chip is disposed opposite to the front and back surfaces with respect to the first semiconductor chip. a drain terminal formed on the main surface of the chip, the source terminal on the back surface of the second semiconductor chip are formed, one on top of the drain terminal of the first semiconductor chip source terminal and the second semiconductor chip The conductor member is formed, the conductor member, the electrically connected to the drain terminal of the first semiconductor chip source terminal and the second semiconductor chip, said driver IC chip of the first semiconductor chip A terminal for electrically connecting to the source terminal is provided.

一例として、ＤＣ／ＤＣコンバータ用ＭＣＭをあげると、制御用パワーＭＯＳＦＥＴのドレイン端子は板状の導体を介して外部接続端子である入力端子と電気的に接続されているか、あるいは、入力端子の一部である板状の導体に直接接続されており、同期用パワーＭＯＳＦＥＴのソース部も同様に、板状の導体を介して外部接続端子である接地端子と電気的に接続されているか、あるいは、接地端子の一部である板状の導体に直接接続されている。 As an example, for the MCM for DC / DC converter, the drain terminal of the control power MOSFET is electrically connected to the input terminal which is the external connection terminal through the plate-like conductor, or one of the input terminals. Is directly connected to the plate-like conductor that is the part, and the source part of the synchronization power MOSFET is also electrically connected to the ground terminal that is the external connection terminal via the plate-like conductor, or It is directly connected to a plate-like conductor that is part of the ground terminal.

また、制御用パワーＭＯＳＦＥＴのソース端子と同期用パワーＭＯＳＦＥＴのドレイン端子は、それぞれ板状の導体に接続され、それらが何らかの導体で接続されているか、あるいは、制御用パワーＭＯＳＦＥＴのソース端子と同期用パワーＭＯＳＦＥＴチップのドレイン端子は、共通の導体の一部にそれぞれ接続されているものである。 Further, the source terminal of the control power MOSFET and the drain terminal of the synchronization power MOSFET are each connected to a plate-like conductor, and they are connected by any conductor, or the source terminal of the control power MOSFET is synchronized with the source terminal. The drain terminal of the power MOSFET chip is connected to a part of the common conductor.

また、その導体は外部接続端子である出力端子と電気的に接続されているか、あるいは、出力端子の一部である。 The conductor is electrically connected to an output terminal which is an external connection terminal, or is a part of the output terminal.

さらに、入力端子、接地端子、出力端子とそれぞれ接続されている、あるいはその一部である板状の導体は、半導体装置を封入している絶縁材料の外部にその一部、あるいは全体が露出しているものである。 Furthermore, the plate-like conductors that are connected to or are part of the input terminal, ground terminal, and output terminal are partly or entirely exposed outside the insulating material enclosing the semiconductor device. It is what.

また、制御用パワーＭＯＳＦＥＴのソース端子と同期用パワーＭＯＳＦＥＴチップのドレイン端子の接続に、共通の板状の導体を用いており、同期用パワーＭＯＳＦＥＴの天地を逆転させて導体の共通の面に接続するものである。 In addition, a common plate-like conductor is used to connect the source terminal of the control power MOSFET and the drain terminal of the synchronization power MOSFET chip, and the top and bottom of the synchronization power MOSFET are reversed and connected to the common surface of the conductor. To do.

本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。 Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

２つの半導体チップの端子を接続する板状導体部材を有することにより、ワイヤ接続に比べて寄生抵抗および寄生インダクタンスの低減化を図ることができ、半導体装置における電気的特性の向上を図ることができる。さらに、前記板状導体部材が封止体から露出していることにより、半導体装置における放熱性の向上を図ることができる。 By having a plate-like conductor member that connects the terminals of two semiconductor chips, it is possible to reduce parasitic resistance and parasitic inductance compared to wire connection, and to improve electrical characteristics in the semiconductor device. . Furthermore, since the plate-like conductor member is exposed from the sealing body, it is possible to improve heat dissipation in the semiconductor device.

以下の実施の形態では特に必要なとき以外は同一または同様な部分の説明を原則として繰り返さない。 In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

さらに、以下の実施の形態では便宜上その必要があるときは、複数のセクションまたは実施の形態に分割して説明するが、特に明示した場合を除き、それらはお互いに無関係なものではなく、一方は他方の一部または全部の変形例、詳細、補足説明などの関係にある。 Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

また、以下の実施の形態において、要素の数など（個数、数値、量、範囲などを含む）に言及する場合、特に明示した場合および原理的に明らかに特定の数に限定される場合などを除き、その特定の数に限定されるものではなく、特定の数以上でも以下でも良いものとする。 Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の機能を有する部材には同一の符号を付し、その繰り返しの説明は省略する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

（実施の形態１）
図１は本発明の実施の形態１の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図、図１７は図１に示す半導体装置の内部を透過して示す斜視図、図２は図１に示すＡ−Ａ線に沿って切断した断面の構造を示す断面図、図３は図１に示す半導体装置の構造を示す裏面図、図４は図１に示す半導体装置の構造を示す外観斜視図、図５〜図７はそれぞれ本発明の実施の形態１の変形例の半導体装置の構造を示す断面図、図８は図１に示す半導体装置（非絶縁型ＤＣ／ＤＣコンバータ）における実装時の等価回路の一例を示す回路図、図１６は比較例の電源用マルチチップモジュールの構造を封止体を透過して示す平面図である。 (Embodiment 1)
FIG. 1 is a plan view showing an example of the structure of a semiconductor device (multi-chip module for non-insulated DC / DC converter) according to Embodiment 1 of the present invention through a sealing body, and FIG. 17 is a semiconductor shown in FIG. FIG. 2 is a cross-sectional view showing the structure of a cross section cut along the line AA shown in FIG. 1, and FIG. 3 is a back view showing the structure of the semiconductor device shown in FIG. 4 is an external perspective view showing the structure of the semiconductor device shown in FIG. 1, FIGS. 5 to 7 are cross-sectional views showing the structure of a semiconductor device according to a modification of the first embodiment of the present invention, and FIG. The circuit diagram which shows an example of the equivalent circuit at the time of mounting in the semiconductor device (non-insulation type DC / DC converter) shown in FIG. 16, FIG. 16 is a top view which shows the structure of the multichip module for power supplies of a comparative example through a sealing body It is.

図１〜図４、図１７に示す本実施の形態１の半導体装置は、複数の半導体チップが１つの封止体（封入用絶縁樹脂）１７に封入されたものであり、本実施の形態１では、前記半導体装置の一例として、非絶縁型ＤＣ／ＤＣコンバータ用のＭＣＭ（マルチチップモジュール）１を取り上げて説明する。 The semiconductor device of the first embodiment shown in FIG. 1 to FIG. 4 and FIG. 17 is a semiconductor device in which a plurality of semiconductor chips are enclosed in one sealing body (encapsulating insulating resin) 17. Then, as an example of the semiconductor device, an MCM (multichip module) 1 for a non-insulated DC / DC converter will be described.

なお、ＭＣＭ１は、図３に示すように、封止体１７の裏面１７ｂの周縁部に複数の外部接続端子１１が配置されたノンリード型のＱＦＮ（Quad Flat Non-leaded Package) 構造のものである。 As shown in FIG. 3, the MCM 1 has a non-lead QFN (Quad Flat Non-leaded Package) structure in which a plurality of external connection terminals 11 are arranged on the peripheral edge of the back surface 17 b of the sealing body 17. .

本実施の形態１のＭＣＭ１の基本構造は、複数の半導体チップと、この複数の半導体チップのうちの少なくとも２つの半導体チップの端子部と電気的に接続する板状導体部材と、前記複数の半導体チップを封止する封止体１７と、封止体１７の裏面１７ｂの周縁部に配置された複数の外部接続端子１１とからなり、前記板状導体部材によって接続された少なくとも２つの半導体チップがそれぞれトランジスタ回路を有しているとともに、前記板状導体部材が封止体１７から露出している。 The basic structure of the MCM 1 according to the first embodiment includes a plurality of semiconductor chips, a plate-like conductor member that is electrically connected to terminal portions of at least two of the plurality of semiconductor chips, and the plurality of semiconductors. The sealing body 17 for sealing the chip and a plurality of external connection terminals 11 arranged on the peripheral edge portion of the back surface 17b of the sealing body 17 include at least two semiconductor chips connected by the plate-like conductor member. Each has a transistor circuit, and the plate-like conductor member is exposed from the sealing body 17.

なお、ＭＣＭ１は、第１の半導体チップである制御用パワーＭＯＳＦＥＴチップ２と、この制御用パワーＭＯＳＦＥＴチップ２と板状導体部材によって電気的に直列に接続された第２の半導体チップである同期用パワーＭＯＳＦＥＴチップ３と、これらのチップの動作をＯＮ／ＯＦＦする第３の半導体チップであるドライバＩＣチップ４とを有しており、これら３つの半導体チップが封止体１７に封止（封入）されている。 Note that the MCM 1 is a control power MOSFET chip 2 that is a first semiconductor chip, and a second semiconductor chip that is electrically connected in series by the control power MOSFET chip 2 and a plate-like conductor member. It has a power MOSFET chip 3 and a driver IC chip 4 which is a third semiconductor chip for turning on / off the operation of these chips, and these three semiconductor chips are sealed (encapsulated) in a sealing body 17. Has been.

つまり、ＭＣＭ１には、それぞれに電源用のトランジスタ回路を有した２つの半導体チップ（第１および第２の半導体チップ）と、これらの２つの半導体チップを制御するドライバ回路を有した１つの半導体チップ（第３の半導体チップ）が搭載されている。 In other words, the MCM 1 includes two semiconductor chips (first and second semiconductor chips) each having a power supply transistor circuit, and one semiconductor chip having a driver circuit that controls these two semiconductor chips. (Third semiconductor chip) is mounted.

本実施の形態１のＭＣＭ１の詳細の構造について説明すると、図１、図２に示すように、入力側板状リード部（第１の板状導体部材）５上に制御用パワーＭＯＳＦＥＴチップ（第１のトランジスタ）２が配置されている。すなわち、制御用パワーＭＯＳＦＥＴチップ２の裏面２ｂには、制御用パワーＭＯＳＦＥＴのドレイン端子ＤＴ１（第１の出力電極）となる端子部が形成されており、このドレイン端子ＤＴ１に第１の板状導体部材である入力側板状リード部５が接続されている。 The detailed structure of the MCM 1 according to the first embodiment will be described. As shown in FIGS. 1 and 2, a control power MOSFET chip (first plate) is formed on the input side plate-like lead portion (first plate-like conductor member) 5. Transistor) 2 is disposed. That is, the back surface 2b of the control power MOSFET chip 2 is formed with a terminal portion that becomes the drain terminal DT1 (first output electrode) of the control power MOSFET, and the drain terminal DT1 has a first plate-like conductor. The input side plate-like lead part 5 which is a member is connected.

一方、制御用パワーＭＯＳＦＥＴチップ２の主面２ａには、制御用パワーＭＯＳＦＥＴのソース端子（第２の出力電極）ＳＴ１、およびゲート端子（入力電極）ＧＴ１となる端子部が形成されており、制御用パワーＭＯＳＦＥＴチップ２の主面２ａのソース端子ＳＴ１と、第２の板状導体部材であるソース用板状リード部１２とが接続されている。 On the other hand, the main surface 2a of the control power MOSFET chip 2 is formed with terminal portions that serve as the source terminal (second output electrode) ST1 and the gate terminal (input electrode) GT1 of the control power MOSFET. The source terminal ST1 on the main surface 2a of the power MOSFET chip 2 for use and the source plate-like lead portion 12 which is the second plate-like conductor member are connected.

また、出力側板状リード部６上には同期用パワーＭＯＳＦＥＴチップ（第２のトランジスタ）３が配置されている。すなわち、同期用パワーＭＯＳＦＥＴチップ３の裏面３ｂには、同期用パワーＭＯＳＦＥＴのドレイン端子（第１の出力端子）ＤＴ２となる端子部が形成されており、このドレイン端子ＤＴ２に第３の板状導体部材である出力側板状リード部６が接続されている。一方、同期用パワーＭＯＳＦＥＴチップ３の主面３ａには、同期用パワーＭＯＳＦＥＴのソース端子ＳＴ２、およびゲート端子（入力電極）ＧＴ２となる端子部が形成されており、同期用パワーＭＯＳＦＥＴチップ３の主面３ａのソース端子ＳＴ２と、第４の板状導体部材であるソース用板状リード部１３とが接続されている。 A synchronization power MOSFET chip (second transistor) 3 is disposed on the output-side plate-like lead portion 6. That is, a terminal portion that becomes the drain terminal (first output terminal) DT2 of the synchronization power MOSFET is formed on the back surface 3b of the synchronization power MOSFET chip 3, and the third plate conductor is formed on the drain terminal DT2. The output side plate-like lead part 6 which is a member is connected. On the other hand, the main surface 3a of the synchronization power MOSFET chip 3 is formed with terminal portions serving as a source terminal ST2 and a gate terminal (input electrode) GT2 of the synchronization power MOSFET. The source terminal ST2 on the surface 3a is connected to the source plate-like lead portion 13 which is a fourth plate-like conductor member.

また、ＭＣＭ１は、接地側板状リード部７とドライバ側板状リード部８を有しており、ドライバ側板状リード部８上には、ドライバＩＣチップ４が配置されている。すなわち、ドライバＩＣチップ４とドライバ側板状リード部８とが接続されている。ドライバＩＣチップ４では、その主面４ａの複数の端子９のうちの一部の端子９と、パワーＭＯＳＦＥＴチップのゲート端子ＧＴ１、ソース端子ＳＴ１、ゲート端子ＧＴ２およびソース端子ＳＴ２とが、それぞれ金線などの金属細線であるワイヤ１０によって電気的に接続されており、各パワーＭＯＳＦＥＴのＯＮ／ＯＦＦの制御に用いられる。 The MCM 1 includes a ground side plate-like lead portion 7 and a driver side plate-like lead portion 8, and the driver IC chip 4 is disposed on the driver side plate-like lead portion 8. That is, the driver IC chip 4 and the driver side plate-like lead portion 8 are connected. In the driver IC chip 4, some of the terminals 9 on the main surface 4a and the gate terminal GT1, the source terminal ST1, the gate terminal GT2, and the source terminal ST2 of the power MOSFET chip are each a gold wire. These are electrically connected by a wire 10 that is a thin metal wire such as, and used for ON / OFF control of each power MOSFET.

ドライバＩＣチップ４の主面４ａのその他の端子９は、それぞれ電源電圧端子、ブート端子、電圧確認用端子および制御信号入力端子などであり、これらに対応する外部接続端子１１とワイヤ１０によって接続されている。 The other terminals 9 on the main surface 4a of the driver IC chip 4 are a power supply voltage terminal, a boot terminal, a voltage confirmation terminal, a control signal input terminal, and the like, and are connected to the corresponding external connection terminals 11 by wires 10. ing.

図３に示すように、各半導体チップが搭載された入力側板状リード部５、出力側板状リード部６およびドライバ側板状リード部８は、ＭＣＭ１の封止体１７の裏面１７ｂにおいて、それぞれ一部あるいは全部が露出しており、プリント実装基板と電気的に接続するための外部接続用端子としてだけでなく、前記プリント実装基板に熱を放出する放熱部品としての役割も果たしている。 As shown in FIG. 3, the input-side plate-like lead portion 5, the output-side plate-like lead portion 6, and the driver-side plate-like lead portion 8 on which each semiconductor chip is mounted are partially on the back surface 17 b of the sealing body 17 of the MCM 1. Alternatively, all of them are exposed, and not only serve as external connection terminals for electrical connection with the printed mounting board, but also serve as heat dissipation components that release heat to the printed mounting board.

また、図１、図２に示すように、ソース用板状リード部１２は、制御用パワーＭＯＳＦＥＴチップ２のソース端子ＳＴ１と、出力側板状リード部６とを電気的に接続しており、同様にソース用板状リード部１３は、同期用パワーＭＯＳＦＥＴチップ３のソース端子ＳＴ２と、接地側板状リード部７とを電気的に接続している。 As shown in FIGS. 1 and 2, the source plate-like lead portion 12 electrically connects the source terminal ST1 of the control power MOSFET chip 2 and the output-side plate-like lead portion 6. The source plate-like lead portion 13 electrically connects the source terminal ST2 of the synchronization power MOSFET chip 3 and the ground side plate-like lead portion 7.

なお、図４に示すように、ソース用板状リード部１２およびソース用板状リード部１３は、それぞれその一部をＭＣＭ１の封止体１７の表面１７ａに露出している。 As shown in FIG. 4, a part of the source plate-like lead portion 12 and the source plate-like lead portion 13 are exposed on the surface 17 a of the sealing body 17 of the MCM 1.

また、図２に示すように、制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３におけるそれぞれ裏面２ｂ，３ｂのドレイン端子ＤＴ１，ＤＴ２は、例えば、銀ペースト１４などのダイボンディング材を介してそれぞれ入力側板状リード部５、出力側板状リード部６に接合されている。 Further, as shown in FIG. 2, the drain terminals DT1 and DT2 of the back surfaces 2b and 3b of the control power MOSFET chip 2 and the synchronization power MOSFET chip 3 are respectively connected via a die bonding material such as silver paste 14, respectively. The input side plate-like lead portion 5 and the output side plate-like lead portion 6 are joined.

一方、制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３におけるそれぞれ主面２ａ，３ａのソース端子ＳＴ１，ＳＴ２は、例えば、金バンプ１５などの複数の導電性の突起電極を介してソース用板状リード部１２，１３にそれぞれ接合されている。 On the other hand, the source terminals ST1 and ST2 of the main surfaces 2a and 3a in the control power MOSFET chip 2 and the synchronization power MOSFET chip 3 are, for example, source plates via a plurality of conductive protrusion electrodes such as gold bumps 15. To the respective lead portions 12 and 13.

ただし、制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３における主面２ａ，３ａのソース端子ＳＴ１，ＳＴ２それぞれとソース用板状リード部１２，１３との接合は、半田からなる突起電極や、あるいはペースト状の導電性の接着剤などを用いて行ってもよい。 However, the junction between the source terminals ST1 and ST2 of the main surfaces 2a and 3a and the source plate-like lead portions 12 and 13 in the control power MOSFET chip 2 and the synchronization power MOSFET chip 3 is a protruding electrode made of solder, Alternatively, a paste-like conductive adhesive or the like may be used.

ここで、図２、図５、図６および図７は、第２の板状導体部材と第３の板状導体部材、および第４の板状導体部材と接地側板状リード部７における種々の接続状態を示すものである。 Here, FIG. 2, FIG. 5, FIG. 6 and FIG. 7 show various examples of the second plate-like conductor member and the third plate-like conductor member, and the fourth plate-like conductor member and the ground-side plate-like lead portion 7. It shows the connection status.

図２に示すように、ソース用板状リード部１２と出力側板状リード部６、およびソース用板状リード部１３と接地側板状リード部７は、それぞれ導体１６を介して電気的に接続されている。また、図５の変形例に示すように、ソース用板状リード部１２ａ，１３ａをそれぞれ出力側板状リード部６、接地側板状リード部７と接続する部分まで同一の導体部材となるように加工して、はんだ１８などを用いて接続しても良い。ソース用板状リード部１２、導体１６、出力側板状リード部６から構成される導体部材（第２導体部材または第３導体部材）は２箇所の屈折部を有し、略Ｓ字形状となっている。 As shown in FIG. 2, the source plate-like lead portion 12 and the output-side plate-like lead portion 6, and the source plate-like lead portion 13 and the ground-side plate-like lead portion 7 are electrically connected via conductors 16, respectively. ing. Further, as shown in the modification of FIG. 5, the source plate-like lead portions 12a and 13a are processed so as to be the same conductor member up to the portion connecting the output-side plate-like lead portion 6 and the ground-side plate-like lead portion 7 respectively. Then, the solder 18 or the like may be used for connection. A conductor member (second conductor member or third conductor member) composed of the source plate-like lead portion 12, the conductor 16, and the output-side plate-like lead portion 6 has two refracting portions and is substantially S-shaped. ing.

また、図６や図７の変形例に示すように、ソース用板状リード部（第２の板状導体部材）１２と出力側板状リード部（第３の板状導体部材）６とが、さらに、ソース用板状リード部１３と接地側板状リード部７とが一体に形成されていてもよい。図６に示す変形例は、プレス加工によって一体に形成されている場合であり、また、図７に示す変形例は、曲げ加工によって一体に形成されている場合である。 Moreover, as shown in the modified examples of FIGS. 6 and 7, the source plate-like lead portion (second plate-like conductor member) 12 and the output-side plate-like lead portion (third plate-like conductor member) 6 are: Further, the source plate-like lead portion 13 and the ground side plate-like lead portion 7 may be integrally formed. The modification shown in FIG. 6 is a case where it is integrally formed by pressing, and the modification shown in FIG. 7 is a case where it is integrally formed by bending.

このように本実施の形態１のＭＣＭ１では、封止体１７の表面１７ａ側に配置されたソース用板状リード部１２と、封止体１７の裏面１７ｂ側に配置された出力側板状リード部６とが、封止体１７の内部における制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３それぞれの外側で連結して電気的に接続されている。 As described above, in the MCM 1 according to the first embodiment, the source plate-like lead portion 12 arranged on the front surface 17a side of the sealing body 17 and the output-side plate-like lead portion arranged on the back surface 17b side of the sealing body 17. 6 are electrically connected to each other outside the control power MOSFET chip 2 and the synchronization power MOSFET chip 3 inside the sealing body 17.

次に、図８は、ＭＣＭ１の実装時の等価回路の一例を示すものである。ＭＣＭ１がコイル２０、コンデンサ２２，２３、さらに負荷２４、入力電源２１などと配線で接続されている。非絶縁型ＤＣ／ＤＣコンバータ回路１９において、生じる発熱のうち大部分は制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３で発生する。 Next, FIG. 8 shows an example of an equivalent circuit when the MCM 1 is mounted. The MCM 1 is connected to the coil 20, the capacitors 22 and 23, the load 24, the input power source 21, and the like by wiring. In the non-insulated DC / DC converter circuit 19, most of the generated heat is generated in the control power MOSFET chip 2 and the synchronization power MOSFET chip 3.

本実施の形態１のＭＣＭ１によれば、電流経路である板状導体部材が、その一方の面で半導体チップに接続されており、かつ他方の面が封止体１７の外部に露出していることから、放熱性を高めることができる。封止体１７の裏面１７ｂに露出した板状導体部材は、外部接続用の端子部として用いられるのと同時に、ＭＣＭ１を実装するプリント配線基板に熱を逃がすことができる。さらに、封止体１７の表面１７ａに露出した板状導体部材は、直接外気への熱の排出、あるいはＭＣＭ１に取り付ける放熱フィン２７（図１３、図１４参照）やヒートシンクなどの放熱部材への伝熱効果を高める役割を有している。 According to the MCM 1 of the first embodiment, the plate-like conductor member that is a current path is connected to the semiconductor chip on one side, and the other side is exposed to the outside of the sealing body 17. Therefore, heat dissipation can be improved. The plate-like conductor member exposed on the back surface 17b of the sealing body 17 can be used as a terminal portion for external connection, and at the same time, can release heat to the printed wiring board on which the MCM 1 is mounted. Furthermore, the plate-like conductor member exposed on the surface 17a of the sealing body 17 is used to directly discharge heat to the outside air or to transfer to a heat radiating member such as a heat radiating fin 27 (see FIGS. 13 and 14) attached to the MCM 1 or a heat sink. It has a role to enhance the thermal effect.

すなわち、制御用パワーＭＯＳＦＥＴチップ２および同期用パワーＭＯＳＦＥＴチップ３で発生した熱を、封止体１７の裏面１７ｂに露出した入力側板状リード部５および出力側板状リード部６からプリント実装基板に伝えて放熱することができ、さらに、封止体１７の表面１７ａに露出したソース用板状リード部１２およびソース用板状リード部１３から外部に放出することができるため、より高い放熱効果を得ることができる。 That is, the heat generated in the control power MOSFET chip 2 and the synchronization power MOSFET chip 3 is transmitted from the input side plate-like lead portion 5 and the output side plate-like lead portion 6 exposed to the back surface 17b of the sealing body 17 to the printed circuit board. Furthermore, since the source plate-like lead portion 12 and the source plate-like lead portion 13 exposed on the surface 17a of the sealing body 17 can be discharged to the outside, a higher heat dissipation effect is obtained. be able to.

したがって、ＭＣＭ１における放熱性の向上を図ることができる。さらに、ＭＣＭ１の電圧変換効率を向上させることができる。 Therefore, the heat dissipation in the MCM 1 can be improved. Furthermore, the voltage conversion efficiency of MCM1 can be improved.

また、制御用パワーＭＯＳＦＥＴチップ２のソース端子ＳＴ１と出力側板状リード部６とを、さらに、同期用パワーＭＯＳＦＥＴチップ３のソース端子ＳＴ２と接地側板状リード部７とをソース用板状リード部１２，１３によってそれぞれ接続することにより、図１６に示す比較例のマルチチップモジュールのような一般的に用いられる金線などのワイヤ２５を用いたワイヤ接続に比べて、本実施の形態１のＭＣＭ１は電流が流れる経路の断面積を大きくすることができるため、抵抗やインダクタンスの寄生成分が小さくなり、変換効率の向上に寄与することが可能になる。 Further, the source terminal ST1 and the output side plate-like lead portion 6 of the control power MOSFET chip 2 are connected, and further, the source terminal ST2 and the ground side plate-like lead portion 7 of the synchronization power MOSFET chip 3 are connected to the plate-like lead portion 12 for source. , 13, the MCM 1 of the first embodiment is compared with the wire connection using the wire 25 such as a gold wire generally used like the multi-chip module of the comparative example shown in FIG. Since the cross-sectional area of the path through which the current flows can be increased, parasitic components of resistance and inductance are reduced, which can contribute to improvement of conversion efficiency.

すなわち、ワイヤ接続に比べて寄生抵抗および寄生インダクタンスの低減化を図ることができ、ＭＣＭ１における電気的特性の向上を図ることができる。 That is, the parasitic resistance and the parasitic inductance can be reduced as compared with the wire connection, and the electrical characteristics of the MCM 1 can be improved.

また、第１のトランジスタの第１の出力電極と第２の出力電極との電流経路と第２のトランジスタの第１の出力電極と前記第２の出力電極との電流経路とを直列接続し、第１導体部材、第２導体部材、第３導体部材、第１のトランジスタ、第２のトランジスタを機械的に一体化して構成することにより、信頼性が高い半導体装置を容易に製造することが可能となる。 A current path between the first output electrode and the second output electrode of the first transistor and a current path between the first output electrode of the second transistor and the second output electrode; A highly reliable semiconductor device can be easily manufactured by mechanically integrating the first conductor member, the second conductor member, the third conductor member, the first transistor, and the second transistor. It becomes.

（実施の形態２）
図９は本発明の実施の形態２の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図、図１０は図９に示すＢ−Ｂ線に沿って切断した断面の構造を示す断面図、図１１は図９に示す半導体装置の構造を示す裏面図、図１２は図９に示す半導体装置の構造を示す外観斜視図である。 (Embodiment 2)
FIG. 9 is a plan view showing an example of the structure of the semiconductor device (non-insulated DC / DC converter multi-chip module) according to the second embodiment of the present invention through a sealing body, and FIG. 10 shows B shown in FIG. FIG. 11 is a cross-sectional view showing the structure of a cross section cut along line -B, FIG. 11 is a back view showing the structure of the semiconductor device shown in FIG. 9, and FIG. 12 is an external perspective view showing the structure of the semiconductor device shown in FIG. .

本実施の形態２の半導体装置は、実施の形態１と同様に、非絶縁型ＤＣ／ＤＣコンバータ用のＭＣＭ（マルチチップモジュール）１であり、制御用パワーＭＯＳＦＥＴチップ２と、同期用パワーＭＯＳＦＥＴチップ３と、これらをＯＮ／ＯＦＦさせるドライバＩＣチップ４とが封入された半導体パッケージである。 As in the first embodiment, the semiconductor device of the second embodiment is an MCM (multi-chip module) 1 for a non-insulated DC / DC converter, and includes a control power MOSFET chip 2 and a synchronization power MOSFET chip. 3 and a driver IC chip 4 for turning these on and off.

本実施の形態２のＭＣＭ１の構造について説明すると、図９，１０に示すように、入力側板状リード部５上に制御用パワーＭＯＳＦＥＴチップ２が配置されている。さらに、制御用パワーＭＯＳＦＥＴチップ２の主面２ａには、制御用パワーＭＯＳＦＥＴのソース端子ＳＴ１、およびゲート端子ＧＴ１となる端子部が形成されており、また、制御用パワーＭＯＳＦＥＴチップ２の裏面２ｂには、制御用パワーＭＯＳＦＥＴのドレイン端子ＤＴ１となる端子部が形成されている。 The structure of the MCM 1 according to the second embodiment will be described. As shown in FIGS. 9 and 10, the control power MOSFET chip 2 is arranged on the input side plate-like lead portion 5. Further, the main surface 2a of the control power MOSFET chip 2 is formed with terminal portions serving as the source terminal ST1 and gate terminal GT1 of the control power MOSFET, and on the back surface 2b of the control power MOSFET chip 2. Is formed with a terminal portion to be the drain terminal DT1 of the control power MOSFET.

一方、実施の形態１とは異なり、接地側板状リード部７上に同期用パワーＭＯＳＦＥＴチップ３が配置されている。すなわち、図１０に示すように、第２の半導体チップである同期用パワーＭＯＳＦＥＴチップ３が、第１の半導体チップである制御用パワーＭＯＳＦＥＴチップ２と表裏面反対の向きで（天地を逆にして）配置されている。なお、同期用パワーＭＯＳＦＥＴチップ３の主面３ａには、同期用パワーＭＯＳＦＥＴのドレイン端子ＤＴ２となる端子部が形成されており、また、同期用パワーＭＯＳＦＥＴチップ３の裏面３ｂには、同期用パワーＭＯＳＦＥＴのソース端子ＳＴ２、およびゲート端子ＧＴ２となる端子部が形成されている。 On the other hand, unlike the first embodiment, the synchronization power MOSFET chip 3 is disposed on the ground side plate-like lead portion 7. That is, as shown in FIG. 10, the synchronization power MOSFET chip 3 as the second semiconductor chip is opposite to the front and back surfaces of the control power MOSFET chip 2 as the first semiconductor chip (with the top and bottom reversed). ) Is arranged. The main surface 3a of the synchronization power MOSFET chip 3 is formed with a terminal portion that becomes the drain terminal DT2 of the synchronization power MOSFET, and the synchronization power MOSFET chip 3 has a synchronization power on the back surface 3b. Terminal portions to be the source terminal ST2 and the gate terminal GT2 of the MOSFET are formed.

さらに、このＤＣ／ＤＣコンバータ用ＭＣＭ１は図９に示すように、出力側板状リード部６を有している。 Further, the DC / DC converter MCM 1 includes an output side plate-like lead portion 6 as shown in FIG.

また、ドライバ側板状リード部８上には、ドライバＩＣチップ４が配置されており、このドライバＩＣチップ４の主面４ａの複数の端子９の一部と、制御用パワーＭＯＳＦＥＴチップ２のゲート端子ＧＴ１、ソース端子ＳＴ１、同期用パワーＭＯＳＦＥＴチップ３のソース端子ＳＴ２、ゲート端子ＧＴ２とが、それぞれ電気的に接続されており、各パワーＭＯＳＦＥＴのＯＮ／ＯＦＦの制御に用いられる。なお、ゲート端子ＧＴ２が下方を向いた主面３ａに形成されているため、図９に示すように、ドライバＩＣチップ４の複数の端子９の一部と、同期用パワーＭＯＳＦＥＴチップ３のゲート端子ＧＴ２とが金属板２６を介してワイヤ１０によって接続されている。ゲート端子ＧＴ２と金属板２６とは、例えば、バンプ電極などを介して電気的に接続されている。その他の端子は、それぞれ電源電圧端子、ブート端子、電圧確認用端子、および制御信号入力端子などであり、対応する外部接続端子１１とワイヤ１０を介して接続されている。 A driver IC chip 4 is disposed on the driver side plate-like lead portion 8, and a part of the plurality of terminals 9 on the main surface 4 a of the driver IC chip 4 and the gate terminal of the control power MOSFET chip 2. GT1, the source terminal ST1, the source terminal ST2 of the synchronization power MOSFET chip 3, and the gate terminal GT2 are electrically connected to each other, and are used for ON / OFF control of each power MOSFET. Since the gate terminal GT2 is formed on the main surface 3a facing downward, as shown in FIG. 9, a part of the plurality of terminals 9 of the driver IC chip 4 and the gate terminal of the synchronization power MOSFET chip 3 are used. GT2 is connected to the wire 10 via the metal plate 26. The gate terminal GT2 and the metal plate 26 are electrically connected through, for example, a bump electrode. The other terminals are a power supply voltage terminal, a boot terminal, a voltage confirmation terminal, a control signal input terminal, and the like, and are connected to the corresponding external connection terminal 11 via the wire 10.

また、入力側板状リード部５、出力側板状リード部６、接地側板状リード部７およびドライバ側板状リード部８それぞれは、図１１に示すように、封止体１７の裏面１７ｂにそれぞれの一部もしくは全部を露出しており、プリント実装基板と電気的に接続するための外部接続用の端子部としてだけでなく、プリント実装基板に熱を排出する放熱部品としての役割も果たしている。 Further, each of the input side plate-like lead portion 5, the output side plate-like lead portion 6, the ground side plate-like lead portion 7 and the driver-side plate-like lead portion 8 is provided on the back surface 17b of the sealing body 17, as shown in FIG. The part or the whole is exposed and serves not only as a terminal part for external connection for electrical connection with the printed mounting board, but also as a heat radiating component for discharging heat to the printed mounting board.

ただし、必ずしも全ての板状リード部を露出させる必要は無く、例えば、出力側板状リード部６のみが露出していない構造などであっても良い。 However, it is not always necessary to expose all the plate-like lead portions. For example, a structure in which only the output-side plate-like lead portion 6 is not exposed may be used.

また、ソース用板状リード部１２は、制御用パワーＭＯＳＦＥＴチップ２のソース端子ＳＴ１と、同期用パワーＭＯＳＦＥＴチップ３のドレイン端子ＤＴ２を電気的に接続している。さらに、図１２に示すようにこのソース用板状リード部１２は、その一部が封止体１７の表面１７ａに露出している。 Further, the source plate-like lead portion 12 electrically connects the source terminal ST1 of the control power MOSFET chip 2 and the drain terminal DT2 of the synchronization power MOSFET chip 3. Further, as shown in FIG. 12, a part of the source plate-like lead portion 12 is exposed on the surface 17 a of the sealing body 17.

したがって、本実施の形態２のＭＣＭ１では、図９に示すように、第２の板状導体部材であるソース用板状リード部１２における制御用パワーＭＯＳＦＥＴチップ２（一方の半導体チップ）との接続箇所と、同期用パワーＭＯＳＦＥＴチップ３（他方の半導体チップ）との接続箇所とが、封止体１７の表面１７ａで連結している。 Therefore, in the MCM 1 of the second embodiment, as shown in FIG. 9, the connection to the control power MOSFET chip 2 (one semiconductor chip) in the source plate-like lead portion 12 which is the second plate-like conductor member. The location and the connection location of the synchronization power MOSFET chip 3 (the other semiconductor chip) are connected by the surface 17 a of the sealing body 17.

なお、制御用パワーＭＯＳＦＥＴチップ２では、そのドレイン端子ＤＴ１が形成された面は、例えば、銀ペースト１４などのダイボンディング材を介して入力側板状リード部５に圧着されており、その反対側の面のソース端子ＳＴ１は、例えば、金バンプ１５などの導電性材料を介してソース用板状リード部１２に接続されている。 In the control power MOSFET chip 2, the surface on which the drain terminal DT1 is formed is pressure-bonded to the input-side plate-like lead portion 5 via a die bonding material such as silver paste 14, for example. The source terminal ST1 on the surface is connected to the source plate-like lead portion 12 via a conductive material such as a gold bump 15, for example.

一方、同期用パワーＭＯＳＦＥＴチップ３では、そのドレイン端子ＤＴ２が形成された面は、例えば、銀ペースト１４などのダイボンディング材を介してソース用板状リード部１２に圧着され、その反対側の面のソース端子ＳＴ２は、例えば、金バンプ１５などの導電性材料を介して接地側板状リード部７に接続されている。 On the other hand, in the power MOSFET chip 3 for synchronization, the surface on which the drain terminal DT2 is formed is pressure-bonded to the plate lead portion 12 for source via a die bonding material such as silver paste 14, and the surface on the opposite side. The source terminal ST2 is connected to the ground-side plate-like lead portion 7 via a conductive material such as a gold bump 15, for example.

本実施の形態２のＭＣＭ１では、少なくとも１つの半導体チップを表裏反対の向きで搭載することにより、実施の形態１のＭＣＭ１に比較してソース用板状リード部１２の加工を容易にすることができる。すなわち、図１０に示すように、平板状の１枚のソース用板状リード部１２のみを用いて制御用パワーＭＯＳＦＥＴチップ２のソース端子ＳＴ１と、同期用パワーＭＯＳＦＥＴチップ３のドレイン端子ＤＴ２とをソース用板状リード部１２の同一面に接続することができるため、ソース用板状リード部１２の異なった面に複数の半導体チップが接続されることによる加工の煩雑さを避けることができ、したがって、リード部間の接続や加工に要する手間を低減することができる。 In the MCM 1 of the second embodiment, by mounting at least one semiconductor chip in the opposite direction, the processing of the source plate-like lead portion 12 can be facilitated as compared with the MCM 1 of the first embodiment. it can. That is, as shown in FIG. 10, the source terminal ST1 of the control power MOSFET chip 2 and the drain terminal DT2 of the synchronization power MOSFET chip 3 are formed by using only one flat plate lead portion 12 for source. Since it can be connected to the same surface of the source plate-like lead portion 12, it is possible to avoid the complexity of processing due to a plurality of semiconductor chips connected to different surfaces of the source plate-like lead portion 12; Accordingly, it is possible to reduce the labor required for connection and processing between the lead portions.

これにより、ＭＣＭ１の構造を単純化することができる。 Thereby, the structure of MCM1 can be simplified.

また、実施の形態のＭＣＭ１に比較して、ソース用板状リード部１２を１枚の平板状で形成することが可能なため、ソース用板状リード部１２の面積をさらに大きくすることができ、放熱効果をさらに向上させることができるとともに、電圧変換効率をさらに向上させることができる。 In addition, since the source plate-like lead portion 12 can be formed as a single flat plate as compared with the MCM 1 of the embodiment, the area of the source plate-like lead portion 12 can be further increased. The heat dissipation effect can be further improved, and the voltage conversion efficiency can be further improved.

（実施の形態３）
図１３は本発明の実施の形態３の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を示す断面図、図１４は本発明の実施の形態３の変形例の半導体装置の構造を示す断面図である。 (Embodiment 3)
FIG. 13 is a cross-sectional view showing an example of the structure of the semiconductor device (non-insulated DC / DC converter multichip module) according to the third embodiment of the present invention, and FIG. 14 shows a semiconductor according to a modification of the third embodiment of the present invention. It is sectional drawing which shows the structure of an apparatus.

本実施の形態３の半導体装置は、実施の形態１，２と同様に、非絶縁型ＤＣ／ＤＣコンバータ用のＭＣＭ（マルチチップモジュール）１であり、さらに放熱性を向上させる構造について説明するものである。 The semiconductor device of the third embodiment is a non-insulated DC / DC converter MCM (multi-chip module) 1 as in the first and second embodiments, and further describes the structure for improving heat dissipation. It is.

図１３に示すＭＣＭ１は、実施の形態１で説明したＭＣＭ１に放熱部材である放熱フィン２７を取り付けたものである。すなわち、実施の形態１のＭＣＭ１は、封止体１７の表面１７ａに露出する２つの板状リード部（ソース用板状リード部１２，１３）が異なる電位を有しているため、放熱フィン２７などの放熱部材が、絶縁シート２８を介して取り付けられている。 The MCM 1 shown in FIG. 13 is obtained by attaching the heat radiating fins 27 as heat radiating members to the MCM 1 described in the first embodiment. That is, in the MCM 1 according to the first embodiment, the two plate-like lead portions (source plate-like lead portions 12 and 13) exposed on the surface 17 a of the sealing body 17 have different potentials. A heat radiating member such as is attached via an insulating sheet 28.

このように、ＭＣＭ１の表面１７ａにおいて、これに露出した板状リード部に放熱フィン２７を取り付けることにより、ＭＣＭ１の放熱性をさらに高めることができる。 Thus, by attaching the radiation fins 27 to the plate-like lead portions exposed on the surface 17a of the MCM 1, the heat dissipation of the MCM 1 can be further enhanced.

また、図１４に示すＭＣＭ１は、実施の形態２のＭＣＭ１に放熱部材である放熱フィン２７を取り付けたものである。このＭＣＭ１では、封止体１７の表面１７ａに露出する板状リード部は、ソース用板状リード部１２の１つだけである。したがって、ソース用板状リード部１２と放熱フィン２７とを絶縁シート２８などを介在させることなく直接接続することができ、図１３に示すＭＣＭ１に比較してさらに放熱性を高めることができる。 Further, the MCM 1 shown in FIG. 14 is obtained by attaching the heat radiating fins 27 as heat radiating members to the MCM 1 of the second embodiment. In the MCM 1, the plate-like lead portion exposed on the surface 17 a of the sealing body 17 is only one of the source plate-like lead portions 12. Therefore, the plate lead portion 12 for source and the radiating fin 27 can be directly connected without interposing the insulating sheet 28 or the like, and the heat dissipation can be further enhanced as compared with the MCM 1 shown in FIG.

また、ソース用板状リード部１２と放熱フィン２７とを一体化させることも可能となり、その場合、より高い放熱効果を得ることができる。 Moreover, it becomes possible to integrate the plate lead part 12 for sources and the radiation fin 27, and in that case, a higher heat radiation effect can be obtained.

（実施の形態４）
図１５は本発明の実施の形態４の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図である。 (Embodiment 4)
FIG. 15 is a plan view showing an example of the structure of the semiconductor device (non-insulated DC / DC converter multichip module) according to the fourth embodiment of the present invention through a sealing body.

本実施の形態４の半導体装置は、実施の形態１，２と同様に非絶縁型ＤＣ／ＤＣコンバータ用のＭＣＭ（マルチチップモジュール）１であるが、実施の形態１および実施の形態２のＭＣＭ１が、制御用パワーＭＯＳＦＥＴチップ２のソース端子ＳＴ１、ゲート端子ＧＴ１とドライバＩＣチップ４の端子９との接続において、あるいは同期用パワーＭＯＳＦＥＴチップ３のソース端子ＳＴ２、ゲート端子ＧＴ２とドライバＩＣチップ４の端子９との接続において、それぞれワイヤ１０を用いているのに対して、本実施の形態４のＭＣＭ１は、これらのゲートドライブ回路、またはその他の接続において金属板（他の板状導体部材）２９を用いていることである。 The semiconductor device of the fourth embodiment is a non-insulated DC / DC converter MCM (multi-chip module) 1 as in the first and second embodiments, but the MCM 1 of the first and second embodiments. However, in connection between the source terminal ST1 and gate terminal GT1 of the control power MOSFET chip 2 and the terminal 9 of the driver IC chip 4, or between the source terminal ST2 of the power MOSFET chip 3 for synchronization and the gate terminal GT2 and the driver IC chip 4 Whereas the wires 10 are used for the connection with the terminals 9, the MCM 1 of the fourth embodiment has a metal plate (other plate-like conductor member) 29 in these gate drive circuits or other connections. It is using.

すなわち、図１５に示す一例では、制御用パワーＭＯＳＦＥＴチップ２の端子部とこれに対応するドライバＩＣチップ４の端子９とが、かつ同期用パワーＭＯＳＦＥＴチップ３の端子部とこれに対応するドライバＩＣチップ４の端子９とがそれぞれ金属板２９によって電気的に接続されている。さらに、各端子と金属板２９との電気的な接続は、例えば、金バンプ１５などを用いて行う。 That is, in the example shown in FIG. 15, the terminal portion of the control power MOSFET chip 2 and the terminal 9 of the driver IC chip 4 corresponding thereto, and the terminal portion of the synchronization power MOSFET chip 3 and the driver IC corresponding thereto. The terminals 9 of the chip 4 are electrically connected by metal plates 29, respectively. Furthermore, the electrical connection between each terminal and the metal plate 29 is performed using, for example, the gold bump 15 or the like.

ＭＣＭ１では、高速スイッチング時には、ゲートドライブ回路など主電流経路以外の寄生抵抗、寄生インダクタンスが効率低下の原因となることがあるため、このようにドライバＩＣチップ４と、制御用パワーＭＯＳＦＥＴチップ２や同期用パワーＭＯＳＦＥＴチップ３の電極間を金属板２９で接続することにより、ワイヤ接続に比較して寄生抵抗、寄生インダクタンスを低減することができる。 In MCM1, at high speed switching, parasitic resistance and parasitic inductance other than the main current path such as a gate drive circuit may cause a decrease in efficiency. Thus, the driver IC chip 4 and the control power MOSFET chip 2 are synchronized with each other. By connecting the electrodes of the power MOSFET chip 3 with the metal plate 29, parasitic resistance and parasitic inductance can be reduced as compared with wire connection.

なお、同様に、図１５に示すその他のワイヤ１０についても金属板２９に置き換えが可能である。 Similarly, the other wires 10 shown in FIG. 15 can be replaced with the metal plate 29.

以上、本発明者によってなされた発明を発明の実施の形態に基づき具体的に説明したが、本発明は前記発明の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることは言うまでもない。 As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

例えば、前記実施の形態１〜４では、ＭＣＭ１の構造として、ＱＦＮ型の半導体装置の場合を取り上げて説明したが、ＭＣＭ１は、ＱＦＮ型に限ることなく、複数の半導体チップが封止体に封入された構造であれば、ＱＦＰ（Quad Flat Package)型などの他の構造の半導体装置であってもよい。さらに、封入される半導体チップの数も３つに限定されるものではなく、４つ以上であってもよい。 For example, in the first to fourth embodiments, the case of a QFN type semiconductor device has been described as the structure of the MCM 1. However, the MCM 1 is not limited to the QFN type, and a plurality of semiconductor chips are enclosed in a sealing body. As long as the structure is the same, a semiconductor device having another structure such as a QFP (Quad Flat Package) type may be used. Furthermore, the number of semiconductor chips to be encapsulated is not limited to three, and may be four or more.

本発明は、半導体装置および電子装置に好適である。 The present invention is suitable for semiconductor devices and electronic devices.

本発明の実施の形態１の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図である。It is a top view which permeate | transmits a sealing body and shows an example of the structure of the semiconductor device (non-insulation type DC / DC converter multichip module) of Embodiment 1 of this invention. 図１に示すＡ−Ａ線に沿って切断した断面の構造を示す断面図である。It is sectional drawing which shows the structure of the cross section cut | disconnected along the AA line shown in FIG. 図１に示す半導体装置の構造を示す裏面図である。FIG. 2 is a back view showing the structure of the semiconductor device shown in FIG. 1. 図１に示す半導体装置の構造を示す外観斜視図である。FIG. 2 is an external perspective view showing a structure of the semiconductor device shown in FIG. 1. 本発明の実施の形態１の変形例の半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device of the modification of Embodiment 1 of this invention. 本発明の実施の形態１の変形例の半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device of the modification of Embodiment 1 of this invention. 本発明の実施の形態１の変形例の半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device of the modification of Embodiment 1 of this invention. 図１に示す半導体装置（非絶縁型ＤＣ／ＤＣコンバータ）における実装時の等価回路の一例を示す回路図である。FIG. 2 is a circuit diagram showing an example of an equivalent circuit when mounted in the semiconductor device (non-insulated DC / DC converter) shown in FIG. 1. 本発明の実施の形態２の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図である。It is a top view which permeate | transmits and shows an example of the structure of the semiconductor device (non-insulation type DC / DC converter multichip module) of Embodiment 2 of this invention. 図９に示すＢ−Ｂ線に沿って切断した断面の構造を示す断面図である。It is sectional drawing which shows the structure of the cross section cut | disconnected along the BB line shown in FIG. 図９に示す半導体装置の構造を示す裏面図である。FIG. 10 is a back view showing the structure of the semiconductor device shown in FIG. 9. 図９に示す半導体装置の構造を示す外観斜視図である。FIG. 10 is an external perspective view showing a structure of the semiconductor device shown in FIG. 9. 本発明の実施の形態３の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the semiconductor device (non-insulation type DC / DC converter multichip module) of Embodiment 3 of this invention. 本発明の実施の形態３の変形例の半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device of the modification of Embodiment 3 of this invention. 本発明の実施の形態４の半導体装置（非絶縁型ＤＣ／ＤＣコンバータ用マルチチップモジュール）の構造の一例を封止体を透過して示す平面図である。It is a top view which permeate | transmits and shows an example of the structure of the semiconductor device (non-insulation type DC / DC converter multichip module) of Embodiment 4 of this invention. 比較例の電源用マルチチップモジュールの構造を封止体を透過して示す平面図である。It is a top view which permeate | transmits the sealing body and shows the structure of the multichip module for power supplies of a comparative example. 図１に示す半導体装置の内部を透過して示す斜視図である。FIG. 2 is a perspective view showing the inside of the semiconductor device shown in FIG.

Explanation of symbols

１ＭＣＭ（半導体装置）
２制御用パワーＭＯＳＦＥＴチップ（第１の半導体チップ）
２ａ主面
２ｂ裏面
３同期用パワーＭＯＳＦＥＴチップ（第２の半導体チップ）
３ａ主面
３ｂ裏面
４ドライバＩＣチップ（第３の半導体チップ）
４ａ主面
５入力側板状リード部（第１の板状導体部材）
６出力側板状リード部（第３の板状導体部材）
７接地側板状リード部
８ドライバ側板状リード部
９端子
１０ワイヤ
１１外部接続端子
１２，１２ａソース用板状リード部（第２の板状導体部材）
１３，１３ａソース用板状リード部（第４の板状導体部材）
１４銀ペースト
１５金バンプ
１６導体
１７封止体（封止用絶縁樹脂）
１７ａ表面
１７ｂ裏面
１８はんだ
１９非絶縁型ＤＣ／ＤＣコンバータ回路
２０コイル
２１入力電源
２２，２３コンデンサ
２４負荷
２５ワイヤ
２６金属板
２７放熱フィン（放熱部材）
２８絶縁シート
２９金属板（他の板状導体部材）
ＳＴ１制御用パワーＭＯＳＦＥＴのソース端子
ＤＴ１制御用パワーＭＯＳＦＥＴのドレイン端子
ＧＴ１制御用パワーＭＯＳＦＥＴのゲート端子
ＳＴ２同期用パワーＭＯＳＦＥＴのソース端子
ＤＴ２同期用パワーＭＯＳＦＥＴのドレイン端子
ＧＴ２同期用パワーＭＯＳＦＥＴのゲート端子 1 MCM (semiconductor device)
2 Control power MOSFET chip (first semiconductor chip)
2a Main surface 2b Back surface 3 Power MOSFET chip for synchronization (second semiconductor chip)
3a main surface 3b back surface 4 driver IC chip (third semiconductor chip)
4a Main surface 5 Input-side plate-like lead portion (first plate-like conductor member)
6 Output side plate-like lead part (third plate-like conductor member)
7 Ground-side plate-like lead portion 8 Driver-side plate-like lead portion 9 Terminal 10 Wire 11 External connection terminal 12, 12a Plate-like lead portion for source (second plate-like conductor member)
13, 13a Plate-shaped lead portion for source (fourth plate-shaped conductor member)
14 Silver paste 15 Gold bump 16 Conductor 17 Sealing body (insulating resin for sealing)
17a Front surface 17b Back surface 18 Solder 19 Non-insulated DC / DC converter circuit 20 Coil 21 Input power source 22, 23 Capacitor 24 Load 25 Wire 26 Metal plate 27 Heat radiation fin (heat radiation member)
28 Insulating sheet 29 Metal plate (other plate-like conductor members)
ST1 Source terminal DT1 of control power MOSFET Drain terminal GT1 of control power MOSFET Gate terminal of control power MOSFET ST2 Source terminal of synchronization power MOSFET DT2 Drain terminal GT2 of synchronization power MOSFET Gate terminal of synchronization power MOSFET

Claims

A DC / DC converter semiconductor device formed in one package,
An input-side plate-like conductor member, a ground-side plate-like conductor member, and an output-side plate-like conductor member;
A first semiconductor chip formed on the input side plate-like conductor member;
A second semiconductor chip formed on top of the ground side plate-like conductor member;
A source terminal and a gate terminal are formed on the main surface of the first semiconductor chip,
A drain terminal is formed on the back surface of the first semiconductor chip,
The second semiconductor chip is arranged in a direction opposite to the front and back surfaces with respect to the first semiconductor chip,
A drain terminal is formed on a main surface of the second semiconductor chip;
A source terminal is formed on the back surface of the second semiconductor chip,
One conductor member is formed on the source terminal of the first semiconductor chip, the drain terminal of the second semiconductor chip, and the output side plate-like conductor member,
The conductor member is electrically connected to a source terminal of the first semiconductor chip, a drain terminal of the second semiconductor chip, and the output side plate-like conductor member;
A wire is connected to a source terminal of the first semiconductor chip;
The input side plate-like conductor member, the ground side plate-like conductor member and the output side plate-like conductor member are formed on the back surface of the package,
The input side plate-like conductor member is electrically connected to a drain terminal of the first semiconductor chip,
The semiconductor device for a DC / DC converter, wherein the ground-side plate-like conductor member is electrically connected to a source terminal of the second semiconductor chip.

The semiconductor device for a DC / DC converter according to claim 1,
The semiconductor device for a DC / DC converter, wherein a cross-sectional area of the plate-like member of the conductor member is larger than a cross-sectional area of the wire.

The semiconductor device for a DC / DC converter according to claim 1,
A driver IC chip for controlling the first and second semiconductor chips;
A source device of the first semiconductor chip is electrically connected to the driver IC chip. A semiconductor device for a DC / DC converter, wherein

The semiconductor device for a DC / DC converter according to claim 1,
The source terminal of the first semiconductor chip is configured in a region not connected to the conductor member,
The semiconductor device for a DC / DC converter, wherein the wire is connected to a region not connected to the conductor member.

A DC / DC converter semiconductor device formed in one package,
An input-side plate-like conductor member, a ground-side plate-like conductor member, and an output-side plate-like conductor member;
A first semiconductor chip formed on the input side plate-like conductor member;
A second semiconductor chip formed on top of the ground side plate-like conductor member;
A source terminal and a gate terminal are formed on the main surface of the first semiconductor chip,
A drain terminal is formed on the back surface of the first semiconductor chip,
The second semiconductor chip is arranged in a direction opposite to the front and back surfaces with respect to the first semiconductor chip,
A drain terminal is formed on a main surface of the second semiconductor chip;
A source terminal is formed on the back surface of the second semiconductor chip,
One conductor member is formed on the source terminal of the first semiconductor chip, the drain terminal of the second semiconductor chip, and the output side plate-like conductor member,
The conductor member is electrically connected to a source terminal of the first semiconductor chip, a drain terminal of the second semiconductor chip, and the output side plate-like conductor member;
A wire is connected to the gate terminal of the first semiconductor chip;
The input side plate-like conductor member, the ground side plate-like conductor member and the output side plate-like conductor member are formed on the back surface of the package,
The input side plate-like conductor member is electrically connected to a drain terminal of the first semiconductor chip,
The semiconductor device for a DC / DC converter, wherein the ground-side plate-like conductor member is electrically connected to a source terminal of the second semiconductor chip.

The semiconductor device for a DC / DC converter according to claim 1,
A driver IC chip for controlling the first and second semiconductor chips;
A gate terminal of the first semiconductor chip is electrically connected to the driver IC chip;
The other wire is electrically connected to the driver IC chip. A semiconductor device for a DC / DC converter, wherein

The semiconductor device for a DC / DC converter according to claim 1,
A driver IC chip for controlling the first and second semiconductor chips;
A gate terminal is formed on the back surface of the second semiconductor chip;
A semiconductor device for a DC / DC converter, wherein a gate terminal of the second semiconductor chip is electrically connected to the driver IC chip.

The semiconductor device for a DC / DC converter according to claim 1,
A driver IC chip for controlling the first and second semiconductor chips;
A semiconductor device for a DC / DC converter, wherein a gate terminal of the first semiconductor chip is electrically connected to the driver IC chip.

The semiconductor device for a DC / DC converter according to claim 1,
The semiconductor device for a DC / DC converter, wherein the first and second semiconductor chips are power transistor chips.

A DC / DC converter semiconductor device formed in one package,
A first semiconductor chip electrically connected to the input side plate-like conductor member ;
A second semiconductor chip electrically connected to the ground-side plate-like conductor member ,
A source terminal and a gate terminal are formed on the main surface of the first semiconductor chip,
A drain terminal is formed on the back surface of the first semiconductor chip,
A drain terminal is formed on a main surface of the second semiconductor chip;
A source terminal is formed on the back surface of the second semiconductor chip,
A conductor member is formed on top of the source terminal of the first semiconductor chip and the drain terminal of the second semiconductor chip;
The conductor member is electrically connected to a source terminal of the first semiconductor chip and a drain terminal of the second semiconductor chip;
A DC / DC converter semiconductor device, wherein a wire is connected to a source terminal and a gate terminal of the first semiconductor chip.

A DC / DC converter semiconductor device formed in one package,
A first semiconductor chip electrically connected to the input side plate-like conductor member ;
A second semiconductor chip electrically connected to the grounded plate-like conductor member ;
A driver IC chip for controlling the first and second semiconductor chips,
A source terminal is formed on a main surface of the first semiconductor chip;
A drain terminal is formed on the back surface of the first semiconductor chip,
A drain terminal is formed on a main surface of the second semiconductor chip;
A source terminal is formed on the back surface of the second semiconductor chip,
A conductor member is formed on top of the source terminal of the first semiconductor chip and the drain terminal of the second semiconductor chip;
The conductor member is electrically connected to a source terminal of the first semiconductor chip and a drain terminal of the second semiconductor chip;
A DC / DC converter semiconductor device, wherein a wire for electrically connecting to the driver IC chip is connected to a source terminal of the first semiconductor chip.

The semiconductor device for a DC / DC converter according to claim 11,
The semiconductor device for a DC / DC converter, wherein the wire is connected to a region of a source terminal not connected to the conductor member of the first semiconductor chip.

A DC / DC converter semiconductor device formed in one package,
A first semiconductor chip electrically connected to the input side plate-like conductor member ;
A second semiconductor chip electrically connected to the grounded plate-like conductor member ;
A driver IC chip for controlling the first and second semiconductor chips,
A source terminal is formed on a main surface of the first semiconductor chip;
A drain terminal is formed on the back surface of the first semiconductor chip,
The second semiconductor chip is arranged in a direction opposite to the front and back surfaces with respect to the first semiconductor chip,
A drain terminal is formed on a main surface of the second semiconductor chip;
A source terminal is formed on the back surface of the second semiconductor chip,
A conductor member is formed on top of the source terminal of the first semiconductor chip and the drain terminal of the second semiconductor chip;
The conductor member is electrically connected to a source terminal of the first semiconductor chip and a drain terminal of the second semiconductor chip;
The semiconductor device for a DC / DC converter, wherein the driver IC chip includes a terminal for electrically connecting to a source terminal of the first semiconductor chip.

The semiconductor device for a DC / DC converter according to claim 13,
A wire for electrically connecting to a terminal of the driver IC chip is connected to a region of a source terminal not connected to the conductor member of the first semiconductor chip. Semiconductor device.

The semiconductor device for DC / DC converter according to claim 11 or 13,
A gate terminal is formed on a main surface of the first semiconductor chip;
A semiconductor device for a DC / DC converter, wherein a wire for electrically connecting to the driver IC chip is connected to the gate terminal.

The semiconductor device for DC / DC converter according to claim 11 or 13,
A gate terminal is formed on the back surface of the second semiconductor chip;
A semiconductor device for a DC / DC converter, wherein a gate terminal of the second semiconductor chip is electrically connected to a terminal of the driver IC chip.

In the DC / DC converter semiconductor device according to any one of claims 5, 11, and 13,
The semiconductor device for a DC / DC converter, wherein a cross-sectional area of the plate-like member of the conductor member is larger than a cross-sectional area of the wire.