JP4111218B2 - Electron beam image processing method and apparatus - Google Patents

Description

  The present invention relates to a substrate manufacturing apparatus having a circuit pattern such as a semiconductor device or a liquid crystal, and more particularly to a technique for inspecting a pattern of a substrate being manufactured using an SEM.

  A conventional electron beam pattern inspection apparatus is described in, for example, Japanese Patent Application Laid-Open No. 5-258703. An example of an electron beam pattern inspection apparatus described in Japanese Patent Laid-Open No. 5-258703 is shown in FIG. The electron beam 2 from the electron beam 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the target substrate 5 is continuously moved in the Y direction. Secondary electrons 7 (hereinafter referred to as secondary electrons including secondary electrons and reflected electrons generated from the sample by irradiating the primary electron beam) are referred to as E × B deflectors (hereinafter simply referred to as E × B). It is bent at 13, detected by the detector 8, amplified by the preamplifier 14, and then A / D converted by the A / D converter 9 to be a digital image, which is essentially the same in the image processing circuit 10. Compared with a digital image of an expected place, a place having a difference is detected as a pattern defect 11 and a defect position is determined. Note that the target substrate 5 is kept at a negative potential by the retarding voltage 12, and changing the retarding voltage 12 facilitates variable acceleration voltage on the target substrate 5.

JP-A-5-258703

In the conventional apparatus as shown in FIG. 1, the secondary electrons 7 are converged on one detector 8 and detected. However, the degree of convergence of secondary electrons is limited by various conditions. Restrictions include (1) degree of freedom of the electron optical system (retarding voltage that controls the acceleration voltage of primary electrons incident on the sample, primary beam current, electric field in the vicinity of the sample, etc.), and (2) scanning the sample. The deflection of the electron beam 2 by the deflecting device 3, (3) setting margin, (4) contamination of the surface of the detector 7 caused by the secondary electrons hitting, (5) various aberrations of the electron optical system, and the like.
Depending on the specific design of the electron optical system, the electron optical system conditions, that is, the retarding voltage for controlling the acceleration voltage of the primary electrons incident on the sample, the current of the primary beam, the electric field in the vicinity of the sample, etc. However, under one fixed condition, (4) and (5) contribute to the degree of convergence of the secondary electrons, and the smallest estimate is about 1 mm. In addition, the influence on the degree of focusing of secondary electrons by scanning the electron beam 2 with the deflector 3 in (2) is about 0.5 mm, although it depends on the scanning width and the magnification with respect to the secondary electrons. Appears as a position shift. Further, the degree of freedom of the optical system (1) is, for example, when the retarding voltage 12 is changed, the degree of focusing changes by about 1 mm due to defocusing although it depends on other conditions.
Further, in reality, since the optical axis of the secondary electron optical system is displaced, it is expected that a shift of the convergence position of about 0.5 mm will occur. When all of these are added, the diameter of the effective light receiving surface of the detector for detecting secondary electrons is required to be about 3 mm. (3) Considering the setting margin, the effective light receiving surface system of the light receiver is required to be 4 mm. .

On the other hand, the frequency characteristics of the detector are inversely proportional to the area of the detector. For example, with a detector having a diameter of 4 mm, even if the design conditions and operation conditions are devised, the cut-off frequency is only about 75 MHz. On the other hand, when the diameter of the detector is 2 mm, the cutoff frequency is about 150 MHz. However, as described above, since the diameter of the detector is required in the conventional apparatus, it is possible to support only up to about 150 Msps (sps: sample per second) of the sampling frequency corresponding to the cutoff frequency of 75 MHz. Therefore, it was not possible to sufficiently cope with frequencies higher than that.
An object of the present invention is to provide an inspection apparatus using an SEM that can sufficiently detect secondary electrons even at a sampling frequency higher than 150 Msps, which is difficult to cope with with a conventional configuration.

A first means for achieving the above object is shown in FIG.
Here, in order to make it easy to understand the configuration for solving the problem, the size of the detector is the above-mentioned 4 mm square (in the above example, the case where the diameter is 4 mm has been described. In order to achieve this, a case of 4 mm square will be described.), And a case where detection is performed at a speed of 400 Msps on the assumption that the cutoff frequency is 75 MHz and that the cutoff frequency is simply inversely proportional to the area will be described. Of course, the numerical value varies depending on the internal structure and material of the sensor, but details are not described here. These discussions are indispensable requirements even when a speed of 400 Msps or more is targeted. In addition, the number of detectors is described as being limited to, for example, four, but is described as a plurality of representative numerical values, and is not limited to a numerical value of four.
An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the target substrate 5, and the one that detects the secondary electrons 7 that are bent by the E × B 13 are 2 mm square 4 400 Msps A / D conversion of the divided detector 20 and the outputs of the preamplifiers 21a to 21d having a bandwidth of 200 MHz or more connected to each detector and the preamplifiers 21a to 21d, and A / D converted into a digital image Compared with a digital image at a place where it can be expected to be the same as the digital image, the image processing circuit 10 detects a place where there is a difference as a defect 11.

In the above configuration, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time the stage 6 is continuously moved in the Y direction, The secondary electrons 7 from the object substrate 5 are bent by E × B13 and detected by the quadrant detector 20, and the signals of the respective split detectors are converted into voltages by the preamplifiers 21a to 21d, and the A / D converter A signal is added at 22 and A / D converted to obtain a digital image, which is compared with a digital image at a place where the image processing circuit 10 can be expected to be the same, and a place having a difference is detected as a defect 11. At this time, even if the change of the retarding voltage 12 and the deflection by the deflector 3 are taken into consideration, the secondary electrons 7 can spread only in a region of 4 mm square at the maximum.
Since one quadrant detector 20 is 2 mm square and four are 4 mm square, the secondary electrons 7 are incident on one of the sensors. Any detector signal is received by the preamplifiers 21 a to 21 d and added by the A / D converter 22, whereby the signals of all the secondary electrons 7 can be A / D converted. The detector is 2 mm square, the cutoff frequency is 300 MHz, the preamplifier bandwidth is 200 MHz, and the A / D converter is 400 Msps. Therefore, the detector, preamplifier, and A / D converter are compatible with 400 Msps. It is enough. Here, instead of the four-divided detector 20, if a configuration in which secondary electrons are detected by using a detector of 6 divisions, 8 divisions or even 12 divisions, the area of each detector is further reduced. Thus, it becomes possible to perform detection at a higher speed than 400 Msps described above.
Next, the second means for achieving the above object is shown in FIG. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the object substrate 5, and the secondary electron deflector 30 that deflects the secondary electrons 7 bent by the E × B 13, The quadrature detectors 31a to 31d each having 4 mm square for detecting secondary electrons deflected by the secondary electron deflector 30, and 50 MHz band preamplifiers 32a to 32d connected to each detector, and the preamplifier 32a Compared to 100 Msps A / D converters 33a to 33d for converting the output of ~ d into a digital image, and a digital image at a place where it can be expected to be essentially the same as the digital image, a place with a difference is detected as a defect 11 It comprises an image processing circuit 10 that performs this.

With the configuration as described above, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the stage 6 is moved in the Y direction. While continuously moving, the secondary electrons 7 from the object substrate 5 are bent by E × B13, and then the secondary electron deflector 30 is sequentially scanned for each detector 20 divided into four at 100 MHz, The signal is detected by the quadrant detector 31, the signal is converted into voltage by the preamplifiers 32a to 32d, and the signal is A / D converted by the A / D converters 33a to 33d to form a digital image. The processing circuit 10 compares it with a digital image at a place where it can be expected to be essentially the same, and detects a place where there is a difference as a defect 11. At this time, even if the change of the retarding voltage 12 and the deflection by the deflector 3 are taken into consideration, the secondary electrons 7 can spread only in a region of 4 mm square at the maximum.
Since one quadrant sensor is 4 mm square, all the secondary electrons 7 are incident on the detector selected by the secondary electron deflector 30. Signals from any detector are received by the preamplifiers 32a to 32d and A / D converted by the A / D converters 33a to 33d. The detector is 4mm square, the cutoff frequency is 75MHz, the preamplifier bandwidth is 50MHz, and the A / D converter is 100Msps, so the detector, preamplifier and A / D converter are 100Msps compatible, and 4 pixels at 100Msps. Since sampling is performed once every four pairs of detectors, preamplifiers, and A / D converters, consideration for 400 Msps is sufficient.
The operation of the secondary electron deflector 30 will be described in detail with reference to FIG. The switching period of the secondary electron deflector 30 in the order of a, b, c, d in units of 2.5 ns is 100 MHz. The A / D converter 33 samples each with a period of 10 ns and 100 Msps, and sequentially arranges the outputs of the four A / D converters to obtain 400 Msps as a whole.
The operation method of the secondary electron deflector 30 will be described with reference to FIG. By using the X / Y deflection signals as sin / cos signals, it is possible to perform a circle scan 92 in which the secondary electrons 7 are continuously moved on the detection surfaces of the quadrant detectors 31a to 31d. A switching scan 93 that discretely scans the secondary electrons 7 on the detection surfaces of the four-divided detectors 31a to 31d by making the X / Y deflection signal a square wave with a period of 10 ns, which is 90 degrees out of phase. Can be obtained. Although not shown, a similar signal can also be obtained by making the X / Y deflection signal a square wave with a period of 10 ns and 5 ns.
A third means for achieving the above object is shown in FIG. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the target substrate 5, and the preamplifier adder integrated type that detects the secondary electrons 7 bent by the E × B 13. A 4M smart detector 40 of 2mm square, a 400Msps A / D converter 41 that converts the output of the 4-smart smart detector 40 into a digital image, and a digital that can be expected to be essentially the same as the digital image The image processing circuit 10 detects a difference 11 as a defect 11 as compared with an image.
With such a configuration, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the stage 6 is continuously continued in the Y direction. The secondary electron 7 from the object substrate 5 is bent by E × B13 while being moved by the step, and then detected by the smart detector 40, and the signal is A / D converted by the A / D converter 41 to obtain a digital image. The image processing circuit 10 compares with a digital image at a place where the image processing circuit 10 can be expected to be the same, and a place having a difference is detected as a defect 11.
At this time, even if the change of the retarding voltage 12 and the deflection by the deflector 3 are taken into consideration, the secondary electrons 7 can spread only in a region of 4 mm square at the maximum. Since one quadrant sensor is 2 mm square and four are 2 mm square, it enters one of the sensors. Any detector signal is received by a preamplifier attached to each sensor built in the smart detector 40, and the signals of all the secondary electrons 7 can be output from the smart detector 40 by adding them. . If the bandwidth of the built-in preamplifier of the smart detector 40 is 200 MHz, the detector is 2 mm square, the cutoff frequency is 300 MHz, and the A / D converter is 400 Msps, so the detector, preamplifier, and A / D converter are It corresponds to 400Msps, and consideration for 400Msps is sufficient.
FIG. 5 shows a fourth means for achieving the above object. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the object substrate 5, the converging optical system 51 that converges the secondary electrons 7 bent by E × B 13, and the convergence A 2 mm square detector 8 for detecting secondary electrons 7 converged by the optical system 51, a preamplifier 52 having a bandwidth of 200 MHz or more connected to the detector, and the output of the preamplifier 52 are A / D converted to a digital image. A 400 Msps A / D converter 9 and an image processing circuit 10 that detects a place where there is a difference as a defect 11 in comparison with a digital image at a place that can be expected to be the same as the original digital image.
With the configuration as described above, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the stage 6 is continuously moved in the Y direction. Then, the secondary electrons 7 from the target substrate 5 are bent by E × B 13 whose bending angle is optimized for each retarding voltage, and then converged to a position corresponding to the retarding voltage by the converging optical system 51. The electronic 7 is detected by a 2 mm square detector 8, amplified by a preamplifier 52, A / D converted by an A / D converter 9, and converted into a digital image. Compared with a digital image of a possible place, a place having a difference is detected as a defect 11.
At this time, when the retarding voltage 12 is changed, the spread due to defocus and the movement of the convergence position are adjusted by the convergence optical system 51 and the E × B 13, respectively. However, the secondary electrons 7 can only spread in a region of a maximum of 1.5 mm square + design margin. Since one detector 8 is 2 mm square and has a little margin, it enters the detector, so that almost all the signals of the secondary electrons 7 can be used as the output of the detector 8. If the preamplifier bandwidth is 200 MHz, the detector is 2 mm square, the cut-off frequency is 300 MHz, and the A / D converter is 400 Msps. Therefore, the detector, preamplifier, and A / D converter are compatible with 400 Msps, and 400 Msps. Consideration is sufficient.
FIG. 6 shows a fifth means for achieving the above object. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. 2 mm square installed at a plurality of locations for detecting the stage 6 to which the retarding voltage 12 is applied, the E × B 13 for bending the secondary electrons 7 from the object substrate 5, and the secondary electrons 7 bent at the E × B 13. Detectors 61a to 61b, and outputs of preamplifiers 62a to 62b having a bandwidth of 200 MHz or more connected to each detector and preamplifiers 62a to 62b are added or switched by a signal synthesis circuit 63 and a signal synthesis circuit 63. Compared to the 400Msps A / D converter 9 which converts the signal into A / D converted digital image, and the digital image where it can be expected to be the same as the digital image, there is a difference Is formed as an image processing circuit 10.
In such a configuration, the receiving range Vamin to Vamax of the retarding voltage 12 of the detector 61a, the receiving range Vbmin to Vbmax of the retarding voltage 12 of the detector 61b, and the secondary electrons corresponding to the retarding voltage 12 of the receiving range. The detectors 61a and 61b are installed at a convergence distance of 7, and are set so as to cover the range of all the retarding voltages 12 when they are combined. When the retarding voltage 12 is between Vamin and Vamax, the signal synthesis circuit 63 selects the detector 61a, and E × B13 is set to enter the detector 61a.
The electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the target substrate 5 is continuously moved in the Y direction. The secondary electrons 7 are bent by E × B13 with an optimized bending angle, the secondary electrons 7 are detected by a 2 mm square detector 61a, amplified by a preamplifier 62a, and then detected by a detector 61a in a signal synthesis circuit. Is selected, the A / D converter 9 performs A / D conversion of the signal to obtain a digital image, and the image processing circuit 10 compares it with a digital image at a place where it can be expected to be essentially the same. Is detected as a defect 11.
At this time, the spread due to defocus and the movement of the convergence position when the retarding voltage 12 is changed are selected by the detectors 61a to 61b and adjusted by the E × B 13, respectively. Even if this is taken into consideration, the secondary electrons 7 spread only in a region of a maximum of 1.5 mm square + design margin. Since one detector 61a to 61b is a 2 mm square and has a little margin, it enters the detector, so that almost all the signals of the secondary electrons 7 can be output from the detectors 61a to 61b. If the preamplifier bandwidth is 200 MHz, the sensor is 2 mm square, the cutoff frequency is 300 MHz, and the A / D converter is 400 Msps. Therefore, the detector, preamplifier, and A / D converter are compatible with 400 Msps. Consideration is sufficient.
A sixth configuration for achieving the above object is shown in FIG. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the object substrate 5, and the secondary electron back deflector that deflects the secondary electrons 7 that are bent by the E × B 13. 71, a 2 mm square detector 72 for detecting the secondary electrons 7 returned by the return deflector 71, and a preamplifier 73 connected to the detector 72 and having a band of 200 MHz or more, and the output of the preamplifier 73 are A A 400Msps A / D converter 9 that converts the digital image into a digital image, and an image process that detects a difference as a defect 11 by comparing the digital image with a digital image that can be expected to be the same as the digital image. A circuit 10 is provided.

In such a configuration, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the stage 6 is continuously moved in the Y direction. However, after the secondary electrons 7 from the object substrate 5 are bent by E × B 13 with the bending angle optimized for each retarding voltage, the secondary electrons 7 are deflected by the secondary electron back deflector 71 by the deflector 3. The amount of movement on the detector 72 is reversed, the movement of the secondary electrons 7 is eliminated, the 2 mm square detector 72 detects it, the preamplifier 73 amplifies it, and the A / D converter 9 performs A / D conversion. Then, a digital image is compared with a digital image at a place where the image processing circuit 10 can be expected to be the same, and a place having a difference is detected as a defect 11.
At this time, the movement of the convergence position when the retarding voltage 12 is changed is adjusted by E × B13. In addition, since the secondary electron back deflector 71 corresponds to the movement of the secondary electrons 7 accompanying the scanning of the deflector 3, the secondary electrons 7 spread only in a region of maximum 2 mm square + design margin. Since the detector 72 is 2 mm square and has no margin, it enters the detector, so that the secondary electron 7 signal can be used as the output of the detector 72. If the preamplifier bandwidth is 200 MHz, the detector is 2 mm square, the cut-off frequency is 300 MHz, and the A / D converter is 400 Msps. Therefore, the detector, preamplifier, and A / D converter are compatible with 400 Msps, and 400 Msps. Consideration is sufficient. Although this configuration alone cannot achieve the target, it can be used, for example, in combination with the fifth configuration to increase design margin.
FIG. 8 shows a seventh means for achieving the above object. An electron source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the target substrate 5, and the target substrate 5 are held, scanned or positioned. The stage 6 to which the retarding voltage 12 is applied, the E × B 13 that bends the secondary electrons 7 from the object substrate 5, the reflector 81 that collides the secondary electrons 7 that are bent by the E × B 13, and the reflective plate A converging optical system 83 for converging the secondary electrons 82 generated by the secondary electrons 7 colliding with 81, a 2 mm square detector 84 for detecting the secondary electrons 82 converged by the converging optical system 83, and a detector It can be expected that the preamplifier 85 having a bandwidth of 200 MHz or more connected to the H.84, the 400 Msps A / D converter 9 that converts the output of the preamplifier 85 into a digital image by A / D conversion, and the digital image are essentially the same. The image processing circuit 10 detects a place having a difference as a defect 11 as compared with a digital image of the place.
In the case of using a plurality of detectors, the detectors are arranged adjacent to each other with the ineffective area around the detectors made as small as possible. Even if the invalid area is as small as possible, 0.2 mm is necessary. If the invalid area is arranged with a space of 0, it is possible to arrange the invalid area with a 0.4 mm invalid area in between. In this method, a plurality of detectors are integrated at the same time when the detector is manufactured. Although it depends on the process, it is possible to make it 0.02 mm or less. FIG. 9 shows an example configured with five detectors 91a to 91e.

In such a configuration, the electron beam 2 from the electron source 1 is deflected in the X direction by the deflector 3 and irradiated onto the target substrate 5 through the objective lens 4, and at the same time, the stage 6 is continuously moved in the Y direction. However, after the secondary electrons 7 from the target substrate 5 are bent by E × B 13 whose bending angle is optimized for each retarding voltage, the secondary electrons 7 are struck against the reflective plate 81, and the secondary electrons 7 generated by the reflective plate 81. The secondary electrons 82 are detected by a 2 mm square detector 84 via a converging optical system 83, amplified by a preamplifier 85, A / D converted by an A / D converter 9, and converted into a digital image. In comparison with a digital image of a place where it can be expected to be the same, a place having a difference is detected as a defect 11.
At this time, since it is once collided with the reflecting plate 81, the secondary electron 82 having almost no energy is generated without depending on the retarding voltage 12 and scanning by the deflector 3, and this is detected by the convergence optical system 83. In order to make it enter into 84, the secondary electron 82 spreads only to the area | region of 2 mm square at maximum. Since the detector 84 is a 2 mm square, all secondary electron 7 signals can be used as the output of the detector 84. If the preamplifier bandwidth is 200 MHz, the detector is 2 mm square, the cut-off frequency is 300 MHz, and the A / D converter is 400 Msps. Therefore, the detector, preamplifier, and A / D converter are compatible with 400 Msps, and 400 Msps. Consideration is sufficient.

  In the means and action for solving the problem described above, the convergence position to the detector is adjusted by E × B, but not passing both the electron beam and the secondary electron other than ExB, A function of adjusting the position of the secondary electrons or the like to the detector by inserting a secondary electron deflector in the optical path of only the secondary electrons or the like may be used. Further, since a large aberration is caused when a large angle is deflected by E × B, it is conceivable to add a dummy E × B that operates in the reverse direction to cancel the aberration.

According to the present invention, it is possible to detect an image at a sampling frequency of 200 Msps or higher and process an SEM image at high speed.
In addition, for example, when a wafer having a diameter of 200 mm is inspected over the entire surface at a speed of 100 Msps with a pixel unit of 0.1 μm using a conventional technique, it takes about 15 hours. If the same wafer is detected at a speed of 400 Msps by the method shown in the invention, the inspection can be performed in about 1/3 of the time, including the stage movement time j and the electron beam scanning time. . Further, when the same wafer is detected at a speed of 200 Msps by the method shown in the present invention, the inspection can be performed in about 8 hours.
As a result, the inspection result can be reflected in the manufacturing process more quickly.
Further, when the apparatus according to the present invention is used, it is possible to inspect three times as many wafers in the same time as the conventional apparatus.

[Example 1]
A first embodiment of the present invention will be described. FIG. 12 shows the configuration of the first embodiment.
The electron source 1 for generating the electron beam 2 and the condenser lens 103 for converging the electron beam 2 from the electron source 1 to a certain place and the position where the condenser lens 103 converges are installed to control ON / OFF of the electron beam 2 A blanking plate 104, a deflector 105 that deflects the electron beam 2 in the X and Y directions, an electron optical system 106 that includes the objective lens 4 that converges the electron beam 2 on the target substrate 5, and a wafer 100 that is the target substrate. The sample chamber 107 that holds the vacuum and the wafer 100 mounted thereon, the stage 6 to which the retarding voltage 108 that enables image detection at an arbitrary position is applied, and the secondary electrons 7 from the target substrate 5 are detected by the detector 20. E × B13 which deflects in the direction of, and a 4-split detector 20 using four 2 mm square detection elements having a 200 MHz band for detecting the deflected secondary electrons 7, and A / D converter 22 having a bandwidth of 200 MHz and 200 MHz and adding outputs of preamplifiers 21a to 21d and preamplifiers 21a to 21d arranged in a sample chamber held in a vacuum, and A / D converting at 400 Msps to obtain a digital image, And a memory 109 for storing a digital image, an image processing circuit 10 for comparing a stored image stored in the memory 109 with a digital image obtained by A / D conversion, and detecting a place where there is a difference as a pattern defect 11, and the whole The control unit 110 (the control line from the overall control unit 110 is omitted in the figure), and the height of the wafer 100 is measured, and the current value of the objective lens 4 is controlled by adding the offset 112 to the target substrate 5. A Z sensor 113 that maintains the focal position of a digital image detected by adjusting the focal position of the electron beam 2 to be focused, and a wafer in the cassette 114 A loader 116 (not shown) for taking 100 into and out of the sample chamber 107, an orientation flat detector 117 (not shown) for positioning the wafer 100 based on the outer shape of the wafer 100, and an optical for observing a pattern on the wafer 100 It comprises an expression microscope 118 and a standard sample piece 119 provided on the stage 6.
The detector 20 described in the present embodiment has the same configuration as that described in FIG.
The operation of the first embodiment will be described. The overall control unit 110 instructs each unit to operate according to the following procedure. An instruction is given to a loader 116 (not shown), the loader 116 takes out the wafer 100 from the cassette 114, positions the wafer with the orientation flat detector 117 (not shown) as a reference, and mounts the wafer 100 on the stage 6. The sample chamber 107 is evacuated. Along with the mounting, conditions for the electron optical system 106 and the retarding voltage 108 are set, and a voltage is applied to the blanking plate 104 to turn off the electron beam 2.
Next, the stage is moved to the standard sample piece 119, the Z sensor 113 is enabled, the focus is kept constant at the detected value of the Z sensor 113 + the offset 112, the deflector 105 is raster scanned, and blanking is synchronized with the scan. The voltage of the plate 104 is turned off, and the electron beam 2 is irradiated onto the wafer 100 only when necessary. At that time, the secondary electrons 7 generated from the wafer 100 are detected by the quadrant detector 20, amplified by the preamplifiers 21a to 21d, and added. The A / D converter 22 performs A / D conversion to obtain a digital image. A plurality of digital images are detected by changing the offset 112, and for each detection, an optimum offset 111 that maximizes the sum of the differential values of the images in the image is set as the current offset value.
Next, the stage 6 is moved and moved to the scanning start position of the region to be inspected on the mounted wafer 100. The offset inherent in the wafer measured in advance is added to the offset 112 and set, the Z sensor 113 is enabled, the stage 6 is scanned in the Y direction along the scanning line 153 shown in FIG. 13, and is synchronized with the stage scanning. Then, the deflector 105 is scanned in the X direction, the voltage of the blanking plate 104 is turned off during the effective scanning, and the electron beam 2 is irradiated onto the wafer 100 and scanned.
The dies 152 on the wafer 100 have the same wiring pattern in units that are finally separated to become products. Secondary electrons 7 generated from the wafer 100 are detected by the quadrant detector 20, amplified by the preamplifiers 21a to 21d, added by the A / D converter 22, and A / D converted to obtain a digital image of the stripe region 154. And stored in the memory 109. After the scanning of the stage 6 is completed, the Z sensor 113 is invalidated. By repeating the stage scanning, the entire necessary area is inspected. When the entire surface of the wafer 100 is inspected, the inspection is performed in the order shown in FIG.
Here, the quadrant detector 20 has the same configuration and operation as those shown in FIG.
When the detection position A 155 is detected by the image processing circuit 10, a place having a difference is extracted as a pattern defect 11 by comparison with the image of the detection position B 156 stored in the memory 109, and a list of the pattern defects 11 is created. And transmitted to the overall control unit 110.
According to the present embodiment, the entire surface of the wafer is inspected using the SEM image to detect only the pattern defect 11 and present them to the user.
According to the present embodiment, since the quadrant detector 20 of the 200 MHz band is used, it has a sufficient area and high speed as a whole, and the preamplifiers 21a to 21d amplify while maintaining the respective bands, so that there is high speed. In addition, by adding them and performing A / D conversion, it is possible to obtain twice the S / N as compared with one detector.
Next, a first modification of the present embodiment will be described. In the first modification, a smart detector in which a quadrant sensor 20 as shown in FIG. 4, preamplifiers 21a to 21d, and a circuit that adds the outputs of the preamplifiers are integrated is used. According to the present modification, when the speed is increased to 400 Msps or more, the sensor and the preamplifier are integrated, and the output is one, so that the number of divisions can be easily increased. .
Next, a second modification of the present embodiment will be described. In this modification, a smart detector in which the quadrant sensor 20 and the preamplifiers 21a to 21d are integrated is used (not shown). That is, in this modified example, the addition circuit is separated from the smart detector of the first modified example as shown in FIG. 4, and the 4-division detection is performed in the configurations shown in FIGS. The unit 20 and the preamplifiers 21a to 21b are integrated. According to this modification, since the sensor and the preamplifier are integrated when the speed is increased to 400 Msps or more, the number of divisions can be easily increased. In addition, since the output of the preamplifier is output individually, there is a feature that it is easy to provide an arithmetic function in addition to addition.
Next, a third modification of the present embodiment will be described. In the present modification, in the configuration shown in FIG. 12, the quadrant sensor 20, preamplifiers 21a to 21d, an arithmetic circuit having one or a plurality of outputs, and outputs of one or a plurality of arithmetic circuits are respectively A / D. A smart detector in which an A / D converter to be converted is integrated is used. According to this modification, since the sensor and the preamplifier are integrated when the speed is increased to 400 Msps or more, the number of divisions can be easily increased.
Next, a fourth modification of the present embodiment will be described. In this modification, the order of addition and A / D conversion is changed with respect to that described in the first embodiment, and the outputs of the preamplifiers 21a to 21d are once A / D converted and A / D converted. Addition or operation is performed later. According to this modification, the characteristics of the quadrant detector 20 and the preamplifiers 21a to 21d can be corrected by calculation.
The first embodiment and its modification have been described above. In this embodiment and its modification, not only the outputs of the quadrant detector 20 are simply added, but also the outputs of the respective detection elements. Alternatively, linear or non-linear arithmetic processing may be performed.
In addition, by using the quadrant detector 20 as described in the present embodiment and its modifications, the light receiving surfaces of the elements have different angles to look at the object, so that their outputs are processed. Thus, it is possible to obtain information on the shape including the unevenness information of the object at high speed.
Furthermore, in the present embodiment and its modification, an example of the quadrant detector 20 is shown. However, the structure of the detector is as shown in FIG. May be.
According to the present embodiment described above and its modification, the structure of the optical system is relatively simple and does not require significant modification compared to the conventional apparatus, and the sampling frequency is more than double that of the conventional apparatus. It becomes possible to detect an SEM image.
In addition, according to the present embodiment and its modification, it is possible to detect the beam diameter of the secondary electrons with the same diameter as that of the conventional apparatus, so the degree of contamination of the detector surface is the same as in the conventional case. In particular, there is no problem that the life of the detector is shortened by high-speed detection.
Furthermore, according to the present embodiment and its modification, the configuration is such that the signals from the divided detectors are received at the same time and the signal is processed, so that the sensitivity of the divided detectors varies. However, since an output corresponding to the variation can be stably obtained, the output signal can be processed relatively easily.
[Example 2]
A second embodiment of the present invention will be described. FIG. 15 shows the configuration of the second embodiment.
The electron source 1 that generates the electron beam 2 and the condenser lens 103 that converges the electron beam 2 from the electron source 1 and a position near the converged position by the condenser lens 103 are installed to control ON / OFF of the electron beam 2. A blanking plate 104, a deflector 105 that deflects the electron beam 2 in the X and Y directions, an electron optical system 106 that includes the objective lens 4 that converges the electron beam 2 on the target substrate 5, and a wafer 100 that is the target substrate. A sample chamber 107 held in vacuum, a stage 6 on which a wafer 100 is mounted and a retarding voltage 108 that enables image detection at an arbitrary position is applied, and secondary electrons 7 that deflect secondary electrons 7 from the target substrate 5 are deflected. Four 4-mm square detection elements having a 50 MHz band for detecting secondary electrons 7 deflected by the electron deflector 30 and the secondary electron deflector 30 from the object substrate 5 A / D converters 33a to 33d for obtaining a digital image by A / D converting the outputs of the quadrant detectors 31a to 31d, the preamplifiers 32a to 32d having a bandwidth of 50 MHz, and the outputs of the preamplifiers 32a to 32d at 100 Msps, and A bit correction table 130 for correcting the characteristics of detectors and preamplifiers provided for each of the A / D converters 33a to 33d, a memory 109 for storing the corrected digital image, and a stored image stored in the memory 109 and A An image processing circuit 10 for comparing a digital image obtained by / D conversion and detecting a place where there is a difference as a pattern defect 11, an overall control unit 110 (control lines from the overall control unit 110 are omitted in the figure), and a wafer The focus of the digital image detected by measuring the height of 100 and controlling the current value of the objective lens 4 by adding the offset 112. A Z sensor 113 that keeps the point position constant, a loader 116 (not shown) that takes the wafer 100 in and out of the cassette 114 into and out of the sample chamber 107, and an orientation flat detector 117 that positions the wafer 100 based on the outer shape of the wafer 100 ( (Not shown), an optical microscope 118 for observing a pattern on the wafer 100, and a standard sample piece 119 provided on the stage 6.
The operation of the second embodiment will be described. First, a bit correction table is set by a method described later. The overall control unit 110 instructs each unit to operate according to the following procedure. An instruction is given to a loader 116 (not shown), the loader 116 takes out the wafer 100 from the cassette 114, positions the wafer 100 with the orientation flat detector 117 (not shown) as a reference, and mounts the wafer 100 on the stage 6. The inside of the sample chamber 107 is evacuated. Along with the mounting, conditions for the electron optical system 106 and the retarding voltage 108 are set, and a voltage is applied to the blanking plate 104 to turn off the electron beam 2.
Next, the stage is moved to the standard sample piece 119, the Z sensor 113 is enabled, the focus is kept constant at the detected value of the Z sensor 113 + the offset 112, the deflector 105 is raster scanned, and blanking is performed in synchronization with the scan. The voltage of the plate 104 is turned off, the wafer 100 is irradiated only when necessary with the electron beam 2, and the secondary electrons 7 generated from the wafer 100 by the secondary electron deflector 30 are ring-shaped with respect to the quadrant detectors 31a to 31d. Are switched one after another and made incident. The detection signals are converted into digital images by the respective preamplifiers 32a to 32d and A / D converters 33a to 33d. A plurality of digital images are detected by changing the offset 112, and for each detection, an optimum offset 111 that maximizes the sum of the differential values of the images in the image is set as the current offset value.
Next, the stage 6 is moved and moved to the scanning start position of the region to be inspected on the mounted wafer 100. The offset inherent in the wafer measured in advance is added to the offset 112 and set, the Z sensor 113 is enabled, the stage 6 is scanned in the Y direction along the scanning line 153 shown in FIG. 13, and is synchronized with the stage scanning. Then, the deflector 105 is scanned in the X direction, the voltage of the blanking plate 104 is turned off during the effective scanning, and the electron beam 2 is irradiated onto the wafer 100 and scanned. The secondary electrons 7 generated from the wafer 100 are switched one after another by the circle scan 92 shown in FIG. 11 for the reflected electrons or secondary electrons generated from the wafer 100 by the secondary electron deflector 30 with respect to the quadrant detectors 31a to 31d. To enter.
The detection signal is converted into a digital image of the stripe region 154 by each of the preamplifiers 32 a to 32 d and the A / D converters 33 a to 33 d and stored in the memory 109. After the scanning of the stage 6 is completed, the Z sensor 113 is invalidated. By repeating the stage scanning, the entire necessary area is inspected. When the entire surface of the wafer 100 is inspected, the inspection is performed in the order shown in FIG. When the detection position A 155 is detected by the image processing circuit 10, a place having a difference is extracted as a pattern defect 11 by comparison with the image of the detection position B 156 stored in the memory 109, and a list of the pattern defects 11 is created. And transmitted to the overall control unit 110.
The operations of the secondary electron deflector 30, quadrant detectors 31a to 31d, preamplifiers 32a to 32d, and A / D converters 33a to 33d will be described in detail. FIG. 10 shows a timing chart. The secondary electron deflector deflects the secondary electrons 7 to the quadrant detectors 31a to 31d at 400 MHz, and the quadrant detectors 31a to 31d, the preamplifiers 32a to 32d, and the A / D converters 33a to 33d sample at 100Msps. And a digital image. These are sequentially arranged to form digital image data equivalent to 400 Msps.
The quadrant detectors 31a to 31d described here have the same configuration as that described in FIG.
The bit correction table 130 outputs corrected values fa (x) to fd (x) for the output value x of A / D conversion for each of the A / D converters 33a to 33d. The reference A / D converter is 33a, and fa (x) = x. Next, the function shape of fb (x) to fd (x) is adjusted so that the signal of the blank wafer made of various materials is detected and the corrected value becomes the same.
According to the present embodiment, the entire surface of the wafer is inspected using the SEM image to detect only the pattern defect 11 and present them to the user.
A modification of this embodiment will be described.
In the first modification, the scanning method of the secondary electron deflector 30 uses a switching scan 93 or the like instead of the circle scan 92 in the scanning method shown in FIG. According to this modification, since the secondary electron scanning on the quadrant detectors 31a to 31d is not an analog scan, the fluctuation of the secondary electrons 7 such as the position drift on the quadrant detectors 31a to 31d. It is characterized by being strong against the factors.
In the second modification, a circuit for performing a linear operation is provided instead of the bit correction table 130 to correct the characteristics of the detector and the preamplifier. According to this modification, there is a feature that high-speed processing can be realized with a simpler circuit.
According to the second embodiment and the modification thereof described above, it is possible to obtain a detection speed N times the operation speed of each detector, and thus it is possible to perform a higher speed detection. .
[Example 3]
A third embodiment of the present invention will be described. FIG. 16 shows the configuration of the third embodiment. The electron source 1 for generating the electron beam 2 and the condenser lens 103 for converging the electron beam 2 from the electron source 1 to a certain place and the position where the condenser lens 103 converges are installed to control ON / OFF of the electron beam 2 A blanking plate 104, a deflector 105 that deflects the electron beam 2 in the X and Y directions, an electron optical system 106 that includes the objective lens 4 that converges the electron beam 2 on the target substrate 5, and a wafer 100 that is the target substrate. Of the secondary electron 7 detector 8 from the target substrate 5 and the stage 6 to which the sample chamber 107 that holds the vacuum 100, the wafer 100 and the retarding voltage 108 that enables image detection at an arbitrary position are applied. ExB13 deflected in the direction, converging optical system 51 for converging the deflected secondary electrons 7, and 200 MHz for detecting the secondary electrons 7 converged by the converging optical system A detector 8 having a band, a preamplifier 52 having a band of 200 MHz, arranged in a sample chamber held in a vacuum, and an A / D converter for obtaining a digital image by A / D converting the output of the preamplifier 52 at 400 Msps. 22 and a memory 109 for storing a digital image, and an image processing circuit 10 for comparing a stored image stored in the memory 109 with a digital image subjected to A / D conversion and detecting a place where there is a difference as a pattern defect 11, And the overall control unit 110 (control lines from the overall control unit 110 are not shown in the figure), and the height of the wafer 100 is measured and the current value of the objective lens 4 is detected by adding the offset 112 to be detected. A Z sensor 113 that keeps the focal position of the digital image constant, and a loader 116 (not shown) that takes the wafer 100 in the cassette 114 into and out of the sample chamber 107. ), An orientation flat detector 117 (not shown) for positioning the wafer 100 based on the outer shape of the wafer 100, an optical microscope 118 for observing a pattern on the wafer 100, and a standard sample provided on the stage 6 It consists of a piece 119.
Here, the detector 8 has the same configuration as that shown in FIG.
The operation of the third embodiment will be described. The overall control unit 110 instructs each unit to operate according to the following procedure. An instruction is given to a loader 116 (not shown), the loader 116 takes out the wafer 100 from the cassette 114, positions the wafer with the orientation flat detector 117 (not shown) as a reference, and mounts the wafer 100 on the stage 6. The sample chamber 107 is evacuated. Along with the mounting, the electron optical system 106, the retarding voltage 108, and the conditions corresponding to the retarding voltage 108 are set in the converging optical system 51, the voltage is applied to the blanking plate 104, and the electron beam 2 is turned off.
Next, the stage is moved to the standard sample piece 119, the Z sensor 113 is enabled, the focus is kept constant at the detected value of the Z sensor 113 + the offset 112, the deflector 105 is raster scanned, and blanking is synchronized with the scan. The voltage of the plate 104 is turned off, and the electron beam 2 is irradiated onto the wafer 100 only when necessary. At that time, the secondary electron 7 convergence optical system 51 generated from the wafer 100 is detected by the detector 8, and the A / D converter 22 The digital image. A plurality of digital images are detected by changing the offset 112, and for each detection, an optimum offset 111 that maximizes the sum of the differential values of the images in the image is set as the current offset value.
Next, the stage 6 is moved and moved to the scanning start position of the region to be inspected on the mounted wafer 100. The offset inherent in the wafer measured in advance is added to the offset 112 and set, the Z sensor 113 is enabled, the stage 6 is scanned in the Y direction along the scanning line 153 shown in FIG. 13, and is synchronized with the stage scanning. Then, the deflector 105 is scanned in the X direction, the voltage of the blanking plate 104 is turned off during the effective scanning, and the electron beam 2 is irradiated onto the wafer 100 and scanned. The dies 152 on the wafer 100 have the same wiring pattern in units that are finally separated to become products. Secondary electrons 7 generated from the wafer 100 are detected by the detector 8, amplified by the preamplifier 52, and then a digital image of the stripe region 154 is obtained by the A / D converter 22 and stored in the memory 109. After the scanning of the stage 6 is completed, the Z sensor 113 is invalidated. By repeating the stage scanning, the entire necessary area is inspected. When the entire surface of the wafer 100 is inspected, the inspection is performed in the order shown in FIG.
When the detection position A 155 is detected by the image processing circuit 10, a place having a difference is extracted as a pattern defect 11 by comparison with the image of the detection position B 156 stored in the memory 109, and a list of the pattern defects 11 is created. And transmitted to the overall control unit 110.
According to this embodiment, it is possible to inspect the entire wafer surface using the SEM image to detect only the pattern defect 11 and present them to the user.
Further, according to the present embodiment, the convergence position of the secondary electrons 7 is adjusted by the convergence optical system 51 according to the retarding voltage 108, and the detector 8 in the 200 Msps band is used. Secondary electrons and the like can be converged on the detector 8.
Furthermore, according to the present embodiment, since detection is performed by one detector, there is little variation in detection signals, and stable detection can be performed. Accordingly, the signal processing circuit can be assembled with a relatively simple configuration.
Next, a modification of the present embodiment will be described.
In the first modification, instead of adjusting the change of the convergence position of the secondary electrons 7 according to the retarding voltage 108 using the convergence optical system 51 of FIG. 5 or FIG. As shown in FIG. 6, in this example, a plurality of detectors 61a and 61b are arranged at positions corresponding to the retarding voltage 108, and they are switched and used. According to the present modification, even when the detectors 61a and 61b have to be arranged at positions away from each other due to spatial restrictions, there is a feature that it is possible to cope with them.
Next, in the second modification, the focusing optical system 51 of FIG. 5 or FIG. 16 is replaced with a swing back deflector 71 as shown in FIG. According to this modification, since the displacement of the secondary electrons 7 due to the influence of the deflector 105 can be corrected, the secondary electrons 7 can be converged on the detector 8 more stably.
Next, as shown in FIG. 8, in the third modification, a reflecting plate 81 is added, and the secondary electrons 7 collide with the reflecting plate 81, and the secondary electrons 82 generated at that time are converged optically. The system 51 is made to converge on the detector 8. According to this modification, the secondary electrons 7 can be more stably converged on the detector 8 and can be detected efficiently.

FIG. 1 is a front view showing a schematic configuration of a conventional electron beam pattern inspection apparatus. FIG. 2 is a front view showing a schematic configuration of the first means of the present invention. FIG. 3 is a front view showing a schematic configuration of the second means of the present invention. FIG. 4 is a front view showing a schematic configuration of the third means of the present invention. FIG. 5 is a front view showing a schematic configuration of the fourth means of the present invention. FIG. 6 is a front view showing a schematic configuration of the fifth means of the present invention. FIG. 7 is a front view showing a schematic configuration of the sixth means of the present invention. FIG. 8 is a front view showing a schematic configuration of the seventh means of the present invention. FIG. 9 is a diagram showing a configuration example of a detector according to the present invention. FIG. 10 is a diagram showing an operation method of the second solving means of the present invention. FIG. 11 is a plan view of a detector showing the operation of the secondary electrons on the detector by the secondary electron deflector. FIG. 12 is a front view showing a schematic configuration of the apparatus according to the first embodiment. FIG. 13 is a plan view of a wafer for explaining the order of inspection. FIG. 14 is a plan view of a wafer for explaining a scanning method on the wafer. FIG. 15: is a front view which shows schematic structure of the apparatus based on the 2nd Example of this invention. FIG. 16: is a front view which shows schematic structure of the apparatus based on the 3rd Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Electron source 2 ... Electron beam 3 ... Deflector 4 ... Objective lens 5 ... Object substrate 6 ... Stage 7 ... Secondary electron 8 ... Detector 9 ... A / D converter 10 ... Image processing circuit 11 ... Pattern defect 12 ... Retarding voltage 13 ... ExB 20 ... 4-divided detector 30 ... Secondary electron deflector 31 ... 4 split detector 33 ... A / D converter 40 ... Smart detector 51 ... Converging optical system 61 ... Detector 62 ... Preamplifier 63 ... Signal synthesis circuit, DESCRIPTION OF SYMBOLS 71 ... Deflector 72 ... Detector 81 ... Reflector plate 82 ... Secondary electron 283 ... Convergent optical system 104 ... Blanking plate 106 ... Electron optical system 107 ... Sample chamber 108 ... retarding voltage 113 ... Z sensor 118 · Optical microscope

Claims (8)

An electron beam focused on a target substrate is irradiated, secondary electrons generated from the target substrate by the irradiation are detected by a sensor, and a signal obtained by the detection is A / D converted to obtain a digital image. A method of processing the digital image, in the step of detecting by the sensor, detecting the secondary electrons using a detection element having a plurality of detection surfaces formed by dividing a detection region as the sensor, in the step of the plurality of the signal obtained by detecting the secondary electrons by the detection surface and amplified respectively by preamplifiers with bandwidth of more than 200MHz, obtain a digital image by converting the a / D of the detecting element, amplified by the preamplifier and wherein the plurality of adding the signals from the detection surface to synthesize a, to obtain a digital image by converting the combined signal at 400Msps more a / D converter, in the step of processing said digital image Electron image processing method characterized by processing the digital image formed by A / D conversion in the serial 400Msps above. 2. The electron beam image processing method according to claim 1, wherein in the step of detecting by the sensor, secondary electrons generated from the target substrate are detected by being converged on the sensor via a converging optical system. In the step of detecting by the sensor, the secondary electrons generated from the object substrate collide with the reflecting plate, and the secondary electrons generated from the reflecting plate due to the collision are converged on the sensor via a converging optical system. 2. The electron beam image processing method according to claim 1, wherein the detection is performed.   2. The electron beam image processing method according to claim 1, wherein a defect on the object substrate is detected by processing the digital image. An electron beam irradiating means for irradiating an electron beam converged on the object substrate; a sensor and a preamplifier for detecting secondary electrons generated from the object substrate irradiated with the electron beam converged by the electron beam irradiating means; A digital image from a signal obtained by A / D conversion by the A / D conversion means, A / D conversion means for A / D converting the signal detected by the detection means, An electron beam image processing apparatus comprising: a digital image acquisition means for obtaining a digital image; and an image processing means for processing a digital image acquired by the digital image acquisition means, wherein the sensor of the detection means detects the secondary electrons. a plurality of detection surfaces formed by dividing the detection region, wherein the preamplifier signal over 200MHz respectively obtained by detecting the secondary electrons by the plurality of detection surfaces of the sensors have a bandwidth of more than 200MHz Bandwidth Amplified, the A / D converting means, wherein by adding the signals from said plurality of detection surfaces which are amplified in a band above 200MHz preamp detection means synthesizes, or 400Msps a signal synthesized by the addition An electron beam image processing apparatus, wherein the digital image obtained by the digital image acquisition means is processed from the signal A / D converted by the image processing means and A / D converted at the image processing means at 400 Msps or higher. Said detecting means further comprises a converging optical system converges the secondary electrons generated from the illuminated said inspection object with an electron beam which is converged by the electron beam irradiation means on the sensor through the converging optical system 6. The electron beam image processing apparatus according to claim 5, wherein the electron beam image processing apparatus is detected. The detection means further includes a reflecting plate and a converging optical system, and causes the secondary electrons generated from the object substrate irradiated with the electron beam converged by the electron beam irradiating means to collide with the reflecting plate, and by the collision 6. The electron beam image processing apparatus according to claim 5, wherein secondary electrons generated from the reflecting plate are converged and detected on the sensor via the converging optical system.   6. The electron beam image processing apparatus according to claim 5, wherein the image processing means detects the defect on the object substrate by processing the digital image.

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