JP4177021B2 - Method for controlling vapor deposition apparatus and vapor deposition apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vapor deposition method and a vapor deposition apparatus for forming, for example, a thin film.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in the field of semiconductor manufacturing technology, active elements such as thin film transistors, insulating thin films, conductive thin films, magnetic thin films, and the like are formed by vapor deposition techniques.
[0003]
FIG. 9A is a diagram showing a configuration of a main part of a conventional vacuum evaporation system. In this vacuum deposition apparatus, a stage STG is rotatably provided in a vacuum container (not shown). The stage STG is provided with a plurality of evaporation sources SL1, SL2,... SL6 having materials to be evaporated M1, M2,... M6, and further, the preheating heater PHT and the main heating heater MHT are provided as the evaporation sources SL1, SL2,. It is provided to oppose to.
[0004]
Further, a vapor deposition substrate (not shown) on which a thin film is to be formed is disposed in the vacuum vessel, and the vaporized particles evaporated from the vaporized materials M1, M2,. Is supposed to form.
[0005]
The evaporation source SL1, SL12... SL6 is first preheated by the preheating heater PHT and then heated by the main heating heater MHT by rotating the stage STG in the direction indicated by the arrow in the drawing during the vapor deposition process. Then, during the main heating, the evaporated particles evaporating from the evaporation target materials M1, M2,... M6 are made incident on the evaporation target substrate surface to form a thin film.
[0006]
Furthermore, only the evaporation source (SL1 in the figure) which is heated by the main heating heater MHT is opened at a position between the deposition target substrate and the stage STG and close to the stage STG. The deposition preventing plates SB1 and SB2 for covering the evaporation source (SL12... SL6 in the drawing) are provided inclined.
[0007]
These anti-adhesion plates SB1 and SB2 contribute only to the evaporation source that has arrived at the position of the main heating heater MHT with the rotation of the stage STG, and eliminate the influence of the remaining evaporation sources. Is provided. The pre-heating heater PHT-side deposition preventing plate SB1 is provided mainly for trapping the vapor particles that leak from the evaporation source during the pre-heating, but preventing them from diffusing into the vacuum vessel. The other deposition preventing plate SB2 traps minutely leaked evaporation particles from the evaporation source that is on standby after being heated by the main heating heater MHT and prevents the particles from diffusing into the vacuum vessel. It is provided for.
[0008]
[Problems to be solved by the invention]
By the way, in the above conventional vapor deposition apparatus, the preheating heater PHT and the main heating heater MHT are attached in accordance with the arrangement interval of two evaporation sources that are adjacent to each other. That is, the preheating heater PHT and the main heating heater MHT are provided adjacent to each other.
[0009]
For this reason, 9 As shown in the process diagram of (b), when the evaporation source SL1 is being heated, the evaporation source SL2 located next to the evaporation source SL1 is preheated, and then the stage STG is rotated so that the evaporation source SL2 is turned on. When the main heating is performed, the adjacent evaporation source SL3 is preheated, and in the same manner, each time the stage STG is rotated, the evaporation sources provided adjacent to each other are supplied from the preheating heater PHT side. The heaters are sequentially moved toward the heating heater MHT.
[0010]
Then, in order to contribute only the evaporation source that is actually heated by the main heating heater MHT to the generation of the evaporated particles, the adhesion preventing plates SB1 and SB2 are provided.
[0011]
However, since the preheating heater PHT and the main heating heater MHT are provided adjacent to each other as described above, the distance between the evaporation source during the main heating and the evaporation source during the preheating is narrow, so that the prevention is prevented. The plate SB1 is provided in the vicinity of the evaporation source being preheated.
[0012]
That is, as can be seen from FIG. 9 (a), the deposition preventing plate SB1 covers the evaporation source SL2 being preheated and the other evaporation sources SL3 and SL4 that are on standby. Inclined at a small angle with respect to a narrow portion between the source SL1 and the source SL1.
[0013]
As described above, the deposition preventing plate SB1 is inclined at a small angle because it is necessary to cover a plurality of evaporation sources disposed at a plurality of different positions. In other words, the deposition preventing plate SB1 must be inclined at a small angle. Therefore, the deposition preventing plate SB1 is close to the evaporation source being preheated.
[0014]
For this reason, the evaporated particles leaked from the evaporation source during the preheating locally adhere to the specific portion OBJ of the deposition preventing plate SB1, and the adhering material is peeled off and arrives at the position of the preheating heater PHT. There are problems such as falling into the evaporation source and blocking the outlet of the evaporation source (the outlet for outputting the evaporated particles). And in order to form a high quality thin film etc. with good reproducibility, the necessity for improvement has increased.
[0015]
In addition, two deposition plates SB1 mainly for covering the evaporation source during preheating and deposition plates SB2 for covering the standby evaporation source must be provided with the evaporation source during the main heating as a boundary. There was a problem of not becoming.
[0016]
Further, when the deposition preventing plate SB1 is arranged mainly to cover the evaporation source being preheated, there is a problem that it is impossible to cover a part of the other evaporation sources.
[0017]
The present invention has been made in view of these conventional problems. In addition to prevention of falling due to separation of evaporated particles adhering to the adhesion-preventing plate, etc., a control method for a vapor deposition apparatus that forms a high-quality thin film with high reproducibility. And it aims at providing a vapor deposition apparatus.
[0018]
[Means for Solving the Problems]
The invention according to claim 1 has a vapor deposition material. Plural n The evaporation source is provided with a rotatable rotating means, a first heating means for preheating the evaporation source, a second heating means for main heating the evaporation source, and the second heating means for main heating. A method of controlling a vapor deposition apparatus comprising an adhesion preventing member that covers the remaining vapor deposition source except for the vapor deposition source that arrives at the position of The number n of the vapor deposition sources is set to any number of 5, 7, or 8, The first heating means and the second heating means When Is arranged at a predetermined position corresponding to the movement trajectory of the vapor deposition source, the angle 360 ° at which the rotating means rotates once is divided into n equal parts, and the angle formed between the evaporation sources is α, which is an integer multiple of the angle α. The angle formed between the first heating means and the second heating means is β, and the angle β is the angle closest to 180 ° except for the angle 180 °, and the rotation means is adjusted according to the angle β. Rotate The And heating with the second heating means after the first heating means. The anti-adhesion member is a flat plate-like member provided closer to the evaporation source and closer to the second heating means side for the main heating and further away from the first heating means side for the preliminary heating. Yes, tilted toward the first heating means with a predetermined elevation angle It is characterized by this.
[0021]
Claim 2 The invention described in (1) has a vapor deposition material Plural n The evaporation source is provided with a rotatable rotating means, a first heating means for preheating the evaporation source, a second heating means for main heating the evaporation source, and the second heating means for main heating. In the vapor deposition apparatus comprising the deposition member that covers the remaining vapor deposition source, except for the vapor deposition source that arrives at the position of The number n of the vapor deposition sources is any number of 5, 7, and 8. The first heating means and the second heating means When Is arranged at a predetermined position corresponding to the movement trajectory of the vapor deposition source, and the angle 360 ° at which the rotating means makes one rotation is divided into n equal parts, and the angle formed between the evaporation sources is α, which is an integer multiple of the angle α. And the angle β formed by the first heating means and the second heating means is set to an angle closest to 180 ° except for an angle of 180 °, the rotating means is rotated according to the angle β, and the first Control means for heating with the second heating means after the heating means Shi , The adhesion preventing member is a plate-shaped member provided closer to the evaporation source and closer to the second heating means side for the main heating, and separated from the first heating means side for the preliminary heating, It is arranged to be inclined toward the first heating means with a predetermined elevation angle. It is characterized by this.
[0028]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. As a preferred embodiment, a revolving type vacuum vapor deposition apparatus that forms a thin film by revolving a plurality of evaporation sources will be described. FIG. 1 is a perspective view showing a partially broken basic configuration of the vapor deposition apparatus 1 of the present embodiment.
[0029]
In this figure, the vapor deposition apparatus 1 includes a hermetically sealed vacuum vessel (hereinafter referred to as “vacuum chamber”) 2 and a vacuum exhaust system 3 that evacuates the vacuum chamber 2.
[0030]
Further, in the vacuum chamber 2, there are a plurality of n deposition sources (hereinafter referred to as “evaporation sources”) SL1 to SLn each including a rotatable substrate holder 4 and shutter 5, and a deposition material (hereinafter referred to as “evaporation material”). A stage 6 serving as a rotatable rotating means is provided so as to face each other.
[0031]
Further, although not shown in FIG. 1, a preheating heater PHT for preheating the evaporation sources SL1 to SLn and a main heating for performing the main heating are provided in the vacuum chamber 2 on the bottom surface side of the stage 6. A heater MHT is provided, and an angle detection sensor for detecting the rotation angle of the stage 6 is provided.
[0032]
A control circuit (not shown) rotates the stage 6 in a predetermined direction by a predetermined angle θ based on the detection output of the angle detection sensor, so that the evaporation sources SL1 to SLn for the preheating heater PHT and the main heating heater MHT are controlled. The positional relationship is changed.
[0033]
That is, although details will be described later, the evaporation sources SL1 to SLn are arranged at an equal angle α (360 ° / n) along a virtual movement locus with respect to the rotation center Q of the stage 6, and the preheating heater PHT. The main heater MHT is fixed in the vacuum chamber 2 at a predetermined angle β proportional to the angle α with respect to the rotation center Q of the stage 6.
[0034]
In the vapor deposition process, the control circuit described above revolves the evaporation sources SL1 to SLn by rotating the stage 6 in a predetermined direction by a predetermined angle θ proportional to the angle α.
[0035]
Therefore, when the stage 6 rotates by a predetermined angle θ, the positions of the evaporation sources SL1 to SLn provided for each angle α with respect to the preheating heater PHT and the main heating heater MHT fixed at the angle β. Is biased, and the facing relationship between each of the evaporation sources SL1 to SLn, the preheating heater PHT, and the main heating heater MHT changes.
[0036]
As a result, the evaporation source preheated by the preheating heater PHT and the evaporation source main heated by the main heating heater MHT are sequentially replaced as the stage 6 rotates, and the main heating heater MHT performs the main heating. The evaporation material is evaporated from the heated evaporation source.
[0037]
Each time the stage 6 is rotated by a predetermined angle θ, the evaporation source is heated to a predetermined time or a predetermined rate by the main heater MHT, and when the predetermined time has elapsed, the stage 6 is rotated again by a predetermined angle θ, Similarly, heating for a predetermined time and rotation of the stage 6 are repeated.
[0038]
The substrate holder 4 and the shutter 5 are coupled to a two-axis rotating shaft 8 that is hermetically attached to the top plate portion 7 of the vacuum chamber 2. The above-described control circuit rotates the rotating shaft 8 to rotate the substrate holder 4 and the shutter 5 independently.
[0039]
As shown by dotted circles in the figure, the substrate holder 4 can be mounted with a plurality of, for example, insulating substrates and semiconductor substrates (hereinafter referred to as “deposition substrates”) on which thin films are to be formed. Yes. Furthermore, a heating mechanism (not shown) is provided to improve the film quality and adhesion of the thin film by maintaining the deposition substrate at an appropriate temperature.
[0040]
In the shutter 5, a hole 9 is formed according to the size of the deposition target substrate mounted on the substrate holder 4. In the present embodiment, only one hole 9 is formed.
[0041]
Then, during the vapor deposition process, the control circuit described above appropriately rotates the substrate holder 4 and the shutter 5 to shutter the evaporation particles generated from the evaporation source heated by the main heater MHT among the evaporation sources SL1 to SLn. A uniform thin film is formed on a plurality of vapor deposition substrates by sequentially entering the vapor deposition substrates through the five holes 9.
[0042]
Further, in the vacuum chamber 2, only the evaporation source that is mainly heated by the main heating heater MHT is opened between the shutter 5 and the stage 6 and close to the stage 6, and the remaining evaporation sources An adhesion preventing plate SB as an adhesion preventing member that covers the upper side is provided.
[0043]
The deposition preventing plate SB is formed of a flat plate member, and is provided on both sides of the evaporation source (indicated by SL1 in FIG. 1) that is heated by the main heater MHT and the evaporation source (SL1). It is disposed at an angle with a predetermined elevation angle with respect to the evaporation source (shown as SL2 and SL7 in FIG. 1) as a boundary. As a result, only the evaporation source that is heated by the main heating heater MHT is opened, and the upper side of the entire remaining evaporation source is covered with one deposition plate SB.
[0044]
However, since the deposition preventive plate only needs to prevent unnecessary evaporation, it is sufficient to cover at least the evaporation source at the positions of symbols SL4 and SL5. It is even better if all evaporation sources other than the main heating are covered.
[0045]
By adopting such a configuration, the deposition preventing plate SB can contribute only to the evaporation source that has arrived at the position of the main heater MHT, and can eliminate the influence of the remaining evaporation source. Yes.
[0046]
Next, in the vapor deposition apparatus 1 having such a configuration, the positional relationship between the evaporation sources SL1 to SLn provided on the stage 6, the preheating heater PHT, the main heating heater MHT, the deposition preventing plate SB, and the rotation of the stage 6 The control method will be described in detail with reference to FIG.
[0047]
First, as described above, the deposition preventing plate SB is provided so as to open only the evaporation source that arrives at the position of the main heater MHT and cover the entire upper side of the remaining evaporation source. Then, the part on the main heating heater MHT side of the deposition preventive plate SB is tilted at a predetermined elevation angle so as to be close to the stage 6 and away from the stage 6 as the remaining evaporation source side part of the deposition preventive plate SB is separated. Yes.
[0048]
Next, FIG. 1 shows a case where seven evaporation sources SL1 to SLn (SL7) are provided on a rotatable stage 6 as a typical example. At least five vapor deposition apparatuses of the present invention are provided. By providing the evaporation sources SL1 to SLn (n = 5) or more, the object of the invention can be achieved.
[0049]
Then, the evaporation sources SL1 to SLn, the preheating heater PHT, and the main heating heater MHT are arranged according to the conditions described below, and the stage 6 is further rotated in a predetermined direction to perform the vapor deposition process.
[0050]
As schematically shown in FIGS. 2A and 2B, the angle α of the evaporation sources SL1 to SLn with respect to the rotation center Q of the stage 6 described above is the angle at which the stage 6 rotates once (ie, 360 °). It is decided by dividing equally. That is, α = 360 ° / n.
[0051]
Next, an angle β formed by the preheating heater PHT and the main heating heater MHT is set with reference to the position of the main heating heater MHT, for example.
[0052]
That is, when vapor deposition is performed by rotating the stage 6 counterclockwise as shown in FIG. 2A, an angle β in the clockwise direction with respect to the position of the main heater MHT is set. When vapor deposition is performed by rotating the stage 6 in the clockwise direction as shown in FIG. 2B, the angle β in the counterclockwise direction with respect to the position of the main heater MHT is set. .
[0053]
In each case shown in FIGS. 2A and 2B, an angle β formed by the preheating heater PHT and the main heating heater MHT is an integer with respect to the angle α of the evaporation sources SL1 to SLn described above. The angle is proportional to double.
[0054]
Further, the proportional angle β is an angle at which the interval between the preheating heater PHT and the main heating heater MHT can be maximized under various conditions limited by the positional relationship of a plurality of evaporation sources. I have decided.
[0055]
By determining the angle β in this manner, when the stage 6 rotates, the evaporation sources SL1 to SLn are always preheated by the preheating heater PHT and then continuously heated by the main heating heater MHT. Yes. At this time, it is preferable to reach a predetermined rate at the preheating position.
[0056]
Of the angles β proportional to an integral multiple of the previously described angle α of the evaporation sources SL1 to SLn, it is desirable to select the largest angle of 180 ° or less as the angle β. Therefore, the separation distance between the preheating heater PHT and the main heating heater MHT can be maximized.
[0057]
Although details will be described later, in the present embodiment, the angle β for maximizing the separation distance between the preheating heater PHT and the main heating heater MHT is used to rotate the stage 6 per step. The angle θ is set equal to the angle θ, and the angle θ for rotating the stage 6 is equal to the angle β. As a result, the separation distance between the preheating heater PHT and the main heating heater MHT is maximized. It is possible to do.
[0058]
Next, the angle θ for sequentially rotating the stage 6 in a predetermined direction is determined as follows.
[0059]
First, assuming a natural number m smaller than the number n of the evaporation sources SL1 to SLn, a value (m−1) / n having no divisor other than 1 among predetermined conditional expressions (m−1) / n is The natural number m in the case of being obtained is selected.
[0060]
Here, if the natural number m is selected based on such a condition, since there are two or more values (m−1) / n having no divisor other than 1, the value (m−1) ) Two natural numbers m when / n is the closest value to 1/2 are obtained.
[0061]
That is, when the natural number m is obtained based on such conditions, the value (m−1) / n is a value (½ + Δ) that is larger by a certain value Δ with respect to a value of ½, and a certain value −Δ. Since this is a small value (1 / 2−Δ), two natural numbers m are obtained.
[0062]
Therefore, among the two selected natural numbers m, when the deposition is performed by rotating the stage 6 counterclockwise as shown in FIG. 2A, the value (m−1) / n is a value ( When a natural number m in the case of 1 / 2−Δ) is selected and deposition is performed by rotating the stage 6 clockwise as shown in FIG. 2B, the value (m−1) / A natural number m is selected when n is a value (1/2 + Δ).
[0063]
After selecting one natural number m according to the rotation direction of the stage 6 in this way, the next natural number m, the number n of the evaporation sources SL1 to SLn, and the angle per rotation of the stage 6 (360 °) The angle θ represented by the equation (1) is determined as the angle θ to be rotated per step of the stage 6.
[0064]
θ = 360 ° × (m−1) / n (1)
When the rotation angle θ per step of the stage 6 is thus determined, when the stage 6 is rotated counterclockwise as shown in FIG. 2A, it is heated by the main heater MHT. As the evaporation source revolves counterclockwise by an angle θ, the evaporation source that has been preheated by the preheating heater PHT revolves toward the main heating heater MHT.
[0065]
For this reason, it is possible to perform the main heating after first preliminarily heating the respective evaporation sources SL1 to SLn, and the evaporation source SL1 as the stage 6 sequentially rotates counterclockwise by the angle θ. ~ SLn can be evenly moved with respect to the preheating heater PHT and the main heating heater MHT.
[0066]
2B, when the stage 6 is rotated in the clockwise direction, the evaporation source heated by the main heater MHT revolves by the angle θ in the clockwise direction. Then, the evaporation source that has been preheated by the preheating heater PHT revolves toward the main heating heater MHT.
[0067]
For this reason, in the case of FIG. 2B as well, it becomes possible to perform the main heating after preliminarily heating the respective evaporation sources SL1 to SLn, and the stage 6 is sequentially rotated clockwise by the angle θ. As a result, the evaporation sources SL1 to SLn can be evenly moved with respect to the preheating heater PHT and the main heating heater MHT.
[0068]
As described above, when the angle β formed by the preheating heater PHT and the main heating heater MHT is determined according to the above-described conditions and the angle θ to be rotated per step of the stage 6 is determined, the evaporation source SL1 Since ~ SLn can be moved uniformly with respect to the preheating heater PHT and the main heating heater MHT, the amount of evaporated particles generated from the evaporation material can be made uniform. It becomes possible to form a high-quality thin film on the substrate to be deposited with good reproducibility.
[0069]
Instead of rotating the evaporation sources SL1 to SLn with respect to the heaters PHT and MHT, the heaters PHT and MHT may be rotated with respect to the evaporation sources SL1 to SLn.
[0070]
Also, a plurality of n heating heaters corresponding to each of the evaporation sources SL1 to SLn are provided in the rotary stage 6, and the evaporation sources SL1 to SLn and the plurality of n heating heaters rotate simultaneously with the rotation of the rotary stage 6. At the time of the rotation, a plurality of n heating heaters are turned on (heated) / off (non-heated) so that the evaporation sources SL1 to SLn are in the preheating, main heating, and standby states according to the sequence described above. You may control.
[0071]
Moreover, the heater for heating may heat the bottom part of an evaporation source, may heat the whole side surface of an evaporation source, and should just be a heater which can evaporate evaporation particles from evaporation material.
[0072]
Further, the angle β formed by the main heating heater MHT and the preheating heater PHT is increased, whereby preheating is performed at a position farthest from the main heating heater MHT on the rotation trajectory of the evaporation sources SL1 to SLn. A heater PHT can be arranged. On the other hand, the deposition preventing plate SB is inclined toward the preheating heater PHT with a predetermined elevation angle.
[0073]
Therefore, as schematically shown in FIG. 8, the distance between the evaporation source preheated by the preheating heater PHT and the portion OBJ of the deposition preventing plate SB facing it increases.
[0074]
For this reason, even if the evaporation particles that are inevitably leaked from the evaporation source during the preheating are attached to the portion OBJ of the deposition preventing plate SB, there is no local attachment as in the prior art, It will diffuse and adhere to the part OBJ.
[0075]
As a result, even if the adhesion amount of the evaporated particles increases, it does not increase at the local portion but adheres widely and thinly, so that it is possible to prevent problems such as separation of the evaporation material.
[0076]
Furthermore, since only the single deposition preventive plate SB can be used to cover all the remaining evaporation sources except the evaporation source to be heated, the number of parts can be reduced.
[0077]
Furthermore, when the evaporation source that has been heated is rotated to the standby position after completing the vapor deposition process, the interval between the evaporation source that has moved to the standby position and the deposition preventing plate SB also increases. For this reason, even if the evaporated particles inevitably leaking from the evaporation source having the residual heat due to the main heating adhere to the deposition preventing plate SB, it adheres widely and thinly as in the case of the partial OBJ described above. Therefore, the problem that the evaporation material is peeled off can be prevented in advance.
[0078]
That is, with reference to FIG. 2 (a), when the evaporation source SL1 that has been heated and contributes to the evaporation completes the evaporation process, the stage 6 rotates at an angle θ, whereby the position where the evaporation source SL5 is located. Move to.
[0079]
This moving position is not immediately to the right of the main heating heater MHT, but is a far position. For this reason, the distance between the part of the deposition preventing plate SB facing the evaporation source SL1 after the movement and the evaporation source SL1 becomes large, and even if the evaporated particles leaked adhere to the part, it diffuses and adheres. The problem that the evaporation material is peeled off can be prevented in advance.
[0080]
More specifically, as will become clearer in the description of the next embodiment, the evaporation source that has been heated and contributed to the vapor deposition moves to the above-mentioned retracted position, and then returns to the position of the preheating heater PHT. By the time it comes, it reaches the position of the preheating heater PHT via a plurality of retreat positions. Since the plurality of retracted positions are located as far as possible with respect to the rotation center Q of the stage 6, the evaporation source after contributing to the vapor deposition moves in a distributed manner with respect to the deposition preventing plate SB. That is, the evaporation source that has contributed to the vapor deposition moves in such a manner as to “go there or come over” with respect to the deposition preventing plate SB. For this reason, even if vapor deposition particles are inevitably generated from the evaporation source and adhere to the deposition preventive plate SB, they are dispersed and adhered to almost the entire range of the deposition preventive plate SB, so that the evaporation material peels off. It can be prevented in advance.
[0081]
In other words, even if vapor deposition particles are inevitably generated from the standby evaporation source, the vapor deposition particles can be reliably trapped by the deposition preventive plate SB. In addition, it is possible to enhance the effect of the trap by cooling the adhesion preventing plate SB.
[0082]
Furthermore, since the distance between the main heating heater MHT and the preheating heater PHT is increased, the boundary between the position of the evaporation source that should not be covered (the position of the main heating heater MHT) and the position of the remaining evaporation source that should be covered. Since the portion becomes wide, the deposition preventing plate SB can be easily positioned and provided.
[0083]
Next, a more specific embodiment will be described with reference to FIGS.
FIG. 3 shows an embodiment in which the vapor deposition process is performed by providing five (n = 5) evaporation sources SL1 to SL5 on the stage 6 and further rotating the stage 6 counterclockwise.
[0084]
In such a case, the aforementioned angle α is set to 72 ° (= 360 ° / 5), and the angle β formed by the main heating heater MHT and the preheating heater PHT is proportional to the angle α and The largest angle of 180 ° or less, that is, 144 ° is set.
[0085]
Further, among the conditional expressions (m−1) / n described above, the value (m−1) / n having no divisor other than 1 and the value closest to ½ is The natural number m is “3” and “4”.
[0086]
Of these, when the natural number m is “4”, it is not selected because it corresponds to the condition for rotating the stage 6 in the clockwise direction. In this embodiment, the natural number m is set to “3”. From the relationship of equation (1), the angle θ to be rotated per step of the stage 6 is 144 °.
[0087]
When the vapor deposition process is performed based on the above conditions, as shown in FIG. 3A, when the evaporation source SL1 is heated by the main heating heater MHT, the evaporation source SL3 is preheated by the preheating heater PHT. Next, when the stage 6 rotates counterclockwise at an angle θ, the preheated evaporation source SL3 moves to the position of the main heating heater MHT and is heated, and the evaporation source SL5 is used for preheating. It moves to the position of the heater PHT and is preheated. Similarly, each time the stage 6 rotates by an angle θ, the corresponding positions of the evaporation sources SL1 to SL5 with respect to the main heating heater MHT and the preheating heater PHT change.
[0088]
A plurality of arrows shown between the evaporation sources SL1 to SL5 shown in FIG. 3A are preheated with the evaporation source to be heated as the stage 6 rotates by an angle θ. The evaporation source located at the tip of the arrow is preheated, and the evaporation source located at the base of the arrow is fully heated.
[0089]
That is, when the stage 6 rotates by an angle θ (144 °) in the state of FIG. 3A, the state shifts to a state indicated by an arrow between the evaporation source SL3 and the evaporation source SL5. That is, as shown in FIG. 3B, the evaporation source SL3 moves to the position of the main heating heater MHT, and the evaporation source SL5 moves to the position of the preheating heater PHT.
[0090]
When the stage 6 further rotates by the angle θ, the state shifts to a state indicated by an arrow between the evaporation source SL5 and the evaporation source SL2 in FIG. That is, as shown in FIG. 3C, the evaporation source SL5 moves to the position of the main heating heater MHT, and the evaporation source SL2 moves to the position of the preheating heater PHT.
[0091]
Similarly, the stage 6 changes to the state shown in FIGS. 3D and 3E as the stage 6 rotates by the angle θ, and further changes from the state shown in FIG. 3E to FIG. 3A. Returning to the state of FIG. 3, the states of FIGS. 3A to 3E described above are sequentially repeated.
[0092]
Thus, as the positional relationship between the evaporation sources SL1 to SL5, the main heating heater MHT, and the preheating heater PHT changes in accordance with the rotation of the stage 6 by the angle θ, each evaporation source is preheated. After that, the main heating is continued, and further, the preheating and the main heating are equally performed in all the evaporation sources, and an appropriate amount of evaporation particles is always obtained from the evaporation material provided in each evaporation source. It will evaporate. For this reason, a high-quality thin film can be formed with good reproducibility on the deposition substrate.
[0093]
Further, since the main heating heater MHT and the preheating heater PHT are provided at positions separated from each other, unnecessary evaporation particles are appropriately trapped by the deposition preventing plate SB as described above with reference to FIG. In addition, it is possible to prevent problems such as separation of the attached evaporated particles.
[0094]
Next, FIG. 4 shows an embodiment in which the stage 6 is provided with seven (n = 7) evaporation sources SL1 to SL7, and the stage 6 is further rotated counterclockwise to perform the evaporation process. .
[0095]
In such a case, the aforementioned angle α is set to about 51.43 ° (= 360 ° / 7), and the angle β formed by the main heating heater MHT and the preheating heater PHT is set to the angle α. It is proportional and is set to the largest angle of 180 ° or less, that is, about 154.29 °.
[0096]
Further, among the conditional expressions (m−1) / n described above, the value (m−1) / n having no divisor other than 1 and the value closest to ½ is The natural number m is “4” and “5”.
[0097]
Of these, when the natural number m is “5”, it is not selected because it corresponds to the condition for rotating the stage 6 in the clockwise direction. In this embodiment, the natural number m is set to “4”. From the relationship of the expression (1), the angle θ to be rotated per step of the stage 6 is set to about 154.29 °.
[0098]
When the vapor deposition process is performed based on the above conditions, the stage 6 rotates by an angle θ (about 154.29 °) as shown in FIG. 4A expressed by the same method as in FIG. Each time the evaporation source moves to the position of the main heating heater MHT and the preheating heater PHT according to the relationship represented by the arrow in FIG.
[0099]
That is, as shown in the process chart of FIG. 4B, as the stage 6 rotates by an angle θ, the preheating and main heating processes for the evaporation sources SL1 to SL7 are sequentially replaced. .
[0100]
Also in this embodiment, as the positional relationship between the evaporation sources SL1 to SL7, the main heating heater MHT, and the preheating heater PHT changes as the stage 6 rotates by an angle θ, each evaporation The source is preheated and then continuously heated. Further, the preheating and the main heating are performed equally in all the evaporation sources, and the appropriate evaporation material is provided from each evaporation source. An amount of evaporated particles will evaporate. For this reason, a high-quality thin film can be formed with good reproducibility on the deposition substrate.
[0101]
Further, in this embodiment, since the main heating heater MHT and the preheating heater PHT are provided at positions apart from each other, unnecessary evaporation particles are removed from the deposition plate as described above with reference to FIG. It is possible to trap properly by SB, and to prevent the attached evaporated particles from peeling off.
[0102]
Next, FIG. 5 shows an embodiment in which the evaporation process is performed by providing eight (n = 8) evaporation sources SL1 to SL8 on the stage 6 and further rotating the stage 6 counterclockwise. .
[0103]
In such a case, the aforementioned angle α is set to 45 ° (= 360 ° / 8), and the angle β formed by the main heating heater MHT and the preheating heater PHT is proportional to the angle α and The largest angle of 180 ° or less, that is, 135 ° is set.
[0104]
Further, among the conditional expressions (m−1) / n described above, the value (m−1) / n having no divisor other than 1 and the value closest to ½ is When the natural number m is “4” and “6”, and the natural number m is “6”, it is not selected because it corresponds to the condition for rotating the stage 6 in the clockwise direction. In this embodiment, by setting the natural number m to “4”, the angle θ to be rotated per step of the stage 6 is set to 135 ° from the relationship of the above formula (1).
[0105]
Note that FIG. 5A shows the correspondence between the evaporation sources SL1 to SL8 with respect to the main heating heater MHT and the preheating heater PHT by the same method as the above-described FIG. 3A and FIG. 4A. Further, FIG. 5B shows the state change of FIG. 5A as a process chart.
[0106]
As is apparent from FIGS. 5A and 5B, in this embodiment as well, as the stage 6 rotates by an angle θ, each evaporation source is preheated and then continuously heated. In addition, preheating and main heating are equally performed in all the evaporation sources, and an appropriate amount of evaporation particles are always evaporated from the evaporation material provided in each evaporation source. A high-quality thin film can be formed with good reproducibility on a vapor deposition substrate.
[0107]
Further, since the main heating heater MHT and the preheating heater PHT are provided at positions separated from each other, unnecessary evaporation particles are appropriately trapped by the deposition preventing plate SB as described above with reference to FIG. It is possible to prevent the attached evaporated particles from being peeled off.
[0108]
Incidentally, when eight evaporation sources SL1 to SL8 are provided for vapor deposition, the conditional expression (m−1) / n is a value having a divisor (m−1) / n. If the natural number m is selected, the effects as shown in FIGS. 5A and 5B cannot be obtained.
[0109]
For example, there is “3” as the natural number m when the divisor is equal to or greater than 1, but if the rotation angle θ of the stage 6 is determined based on this value “3”, the angle θ is 90 °. become.
[0110]
Then, if the stage 6 is rotated by an angle θ of 90 °, as shown in FIG. 6A, only four evaporation sources, which are half of the eight evaporation sources SL1 to SL8, are used for the main heating. It becomes impossible to move to the position of the heater MHT, and the remaining four evaporation sources cannot be heated.
[0111]
Furthermore, if each evaporation source is first preheated and then continuously heated, the position of the preheating heater PHT is determined to be 90 ° with respect to the position of the main heating heater MHT. The number of evaporation sources that can be heated is limited to only four out of eight.
[0112]
Therefore, as shown in the process chart of FIG. 6B, the number of evaporation sources that can be subjected to the preheating and the main heating is only four, and there are only four combinations thereof. Therefore, problems such as the inability to effectively use the evaporation source are caused.
[0113]
However, in this case, it is possible to continuously use the remaining evaporation source by moving any of the remaining evaporation sources to the preheating position.
[0114]
As described above, according to the vapor deposition apparatus 1 of the present embodiment including the above-described examples, five or more evaporation sources are arranged on the stage 6 at a predetermined angle α according to the predetermined conditions described above, and for preheating. The heater PHT and the main heating heater MHT are fixed at a predetermined angle β, and deposition is performed while rotating the stage 6 in a predetermined direction at every angle θ, so that a high-quality thin film is reproduced on the substrate to be deposited. It can be formed with good properties.
[0115]
In addition, although the example in the case of having six evaporation sources and the case of having nine or more evaporation sources is not described, if the vapor deposition process is performed while satisfying the above-described conditions, the above-described evaporation is performed. The same effects as in the embodiment when the number of sources is 5, 7, or 8 can be universally obtained.
[0116]
Further, the embodiment described above is based on so-called angle control in which the rotation angle θ of the stage 6 is detected by the angle detection sensor and the rotation of the stage 6 is controlled to obtain an appropriate deposition state. However, the present invention is not limited to the angle control in a narrow sense, and a control method corresponding to the angle control is included in the present invention.
[0117]
That is, in the embodiment described above, as shown in the flowchart of FIG. 7, when the vapor deposition process is started, in step S <b> 100, the stage 6 is rotated at an angle θ satisfying the predetermined condition described above, thereby performing the main heating. Then, in step S102, the position of the hole 9 of the shutter 5 is adjusted and the evaporated particles from the heated source are incident on the deposition target substrate to form a thin film. Further, the processes in steps S100 to S104 are repeated until the completion of the vapor deposition process is confirmed in step S104.
[0118]
However, the present invention is not limited to such angle control. For example, the rotation of the stage 6 is performed by so-called order control for controlling the order of movement of a plurality of evaporation sources with respect to the preheating heater PHT and the main heating heater MHT. May be controlled.
[0119]
When this order control is performed, the angle α of each of the plurality of n evaporation sources SL1 to SLn is set according to the above-described conditions, and the angle β formed by the preheating heater PHT and the main heating heater MHT is also set. A predetermined angle proportional to the angle α is set. Further, the order in which the respective evaporation sources SL1 to SLn are moved to the positions of the main heating heater MHT and the preheating heater PHT is registered in advance in the control circuit, and moved to the positions of the main heating heater MHT and the preheating heater PHT. A position detection sensor for detecting the evaporated source is provided in the vacuum chamber 2.
[0120]
That is, for example, the data on the opposing relationship between the evaporation source to be preheated and the evaporation source to be heated as shown in the process charts of FIGS. Register in the control circuit.
[0121]
Then, instead of performing the angle control in step S100 shown in FIG. 7, the positions of the main heating heater MHT and the preheating heater PHT according to the order registered in advance by the control circuit based on the detection output of the position detection sensor. The stage 6 is rotated while confirming that each of the evaporation sources SL1 to SLn has moved.
[0122]
Thus, even if each evaporation source SL1 to SLn is revolved to move to the main heating heater MHT and the preheating heater PH side according to the order registered in advance, it is equivalent to performing the angle control described above. Function can be demonstrated.
[0123]
In addition, according to the embodiment including the example described above, the same type of evaporation material is provided in each evaporation source, so that a thin film having the same property can be formed on a plurality of deposition substrates with high reproducibility. be able to. In addition, by providing different evaporation materials for each evaporation source, it is possible to form a so-called multilayer film in which thin films having different properties are stacked on a plurality of deposition target substrates.
[0124]
In the description of the present embodiment, the case where a flat deposition preventing plate SB is used as the deposition preventing member has been described. However, it is possible to appropriately apply processing such as deformation.
[0125]
Moreover, although the case where the adhesion prevention board SB was provided incline was described, it is not limited to such a case. For example, one side of a flat plate is bent into an L-shaped cross section, one side of the bent side is a wall, the other side is a ceiling, and the position of the heating heater MHT ( The entire position above the stage 6 may be covered with a ceiling so that the position where the evaporation source arrives is outside the wall. For example, the ceiling described above may be arranged and covered so as to be substantially parallel to all the evaporation sources except for the position of the main heater MHT.
[0126]
【The invention's effect】
As described above, according to the present invention, in order to preheat the plurality of vapor deposition sources with the first heating unit and then perform the main heating with the second heating unit, the plurality of vapor deposition sources are rotated with the rotating unit, At that time, since the rotation means is rotated at a special angle based on the relationship between the positions of the plurality of vapor deposition sources and the positions of the first and second heating means, preheating and main heating for each vapor deposition source are performed. Can be made uniform, and a high-quality thin film or the like can be formed with good reproducibility.
[0127]
Furthermore, unnecessary vapor deposition particles leaking from the vapor deposition source can be trapped by adhering to the adhesion-preventing member, and at that time, the rotating means is rotated at the above-mentioned special angle. Can be dispersed or diffused. For this reason, the problem that unnecessary vapor deposition particles adhere locally to a deposition preventing member and peeling or the like can be prevented.
[0128]
Furthermore, even when the deposition preventing member is formed of a flat plate-shaped member and is inclined with respect to a plurality of vapor deposition sources, it is close to the second heating means side for performing the main heating and performs the preliminary heating. By tilting the deposition preventive member away from the first heating means, unnecessary deposition particles that leak from the deposition source during preheating are dispersed or diffused in the deposition member. Therefore, it is possible to prevent the problem that unnecessary vapor deposition particles adhere locally and cause peeling or the like.
[0129]
Further, the present invention makes it possible to increase the separation distance between the first heating means and the second heating means, and to make the preheating and the main heating applied to the respective vapor deposition sources uniform. It has excellent characteristics. Therefore, it is unnecessary to partition the vapor deposition source that will arrive at the position of the first heating means and the vapor deposition source that will arrive at the position of the second heating means, and to leak from the vapor deposition source during the preheating. When the vapor deposition particles are removed by adhering to the deposition preventing member, the deposition preventing member can be easily positioned and provided.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a basic configuration of a vapor deposition apparatus of the present embodiment.
FIG. 2 is a diagram illustrating a positional relationship between a main heating heater, a preheating heater, and an evaporation source provided on the stage, and a relationship between a rotation angle of the stage.
FIG. 3 is a view showing an embodiment of a vapor deposition apparatus having five evaporation sources.
FIG. 4 is a view showing an embodiment of a vapor deposition apparatus having seven evaporation sources.
FIG. 5 is a view showing an embodiment of a vapor deposition apparatus having eight evaporation sources.
FIG. 6 is a diagram for explaining a problem that occurs when an evaporation process is performed with eight evaporation sources without satisfying a predetermined condition.
FIG. 7 is a flowchart showing a vapor deposition process performed in the vapor deposition apparatus of the present embodiment.
FIG. 8 is a schematic view for explaining the effect of the vapor deposition apparatus of the present embodiment.
FIG. 9 is a diagram for explaining problems in a conventional vapor deposition apparatus.
[Explanation of symbols]
1 ... Vapor deposition equipment
2 ... Vacuum chamber
3 ... Vacuum exhaust system
4 ... Board holder
5 ... Shutter
6 ... stage
9 ... hole
SB ... Protection plate
SL1 to SLn ... evaporation source
PHT ... Preheating heater
MHT ... Heater for main heating
α: Angle of each evaporation source
β: Angle between the preheating heater and the main heating heater
θ ... An angle to rotate the stage per step

Claims (2)

A rotating means that is provided with a plurality of n deposition sources having a deposition material and is rotatable;
First heating means for preheating the vapor deposition source;
A second heating means for main heating the vapor deposition source;
A method of controlling a vapor deposition apparatus comprising an adhesion preventing member that covers the remaining vapor deposition source, excluding the vapor deposition source that arrives at the position of the second heating means that performs the main heating,
5, the number n of the deposition source, seven, while eight of any number, predetermined position corresponding with said first heating means and second heating means on a moving path of the deposition source Placed in
An angle formed by dividing the angle 360 ° at which the rotating means makes one rotation into n equal parts and α is an angle between α and an integer multiple of the angle α, and the first heating means and the second heating means Let β be the angle formed by
The angle beta is the closest angle 180 °, except the angle 180 °, the rotating means is rotated and heated with continued the second heating means after the first heating means in accordance with said angle beta,
The adhesion preventing member is a plate-shaped member provided closer to the evaporation source and closer to the second heating means side for the main heating, and separated from the first heating means side for the preliminary heating, Tilting toward the first heating means with a predetermined elevation angle ,
A method for controlling a vapor deposition apparatus. A rotating means that is provided with a plurality of n deposition sources having a deposition material and is rotatable;
First heating means for preheating the vapor deposition source;
A second heating means for main heating the vapor deposition source;
In the vapor deposition apparatus comprising: a deposition member that covers the remaining vapor deposition source except for the vapor deposition source that arrives at the position of the second heating means that performs the main heating,
The number n is five of the deposition source, seven, and eight any number of a predetermined position where said first heating means and second heating means corresponding to the moving locus of the deposition source Arranged,
An angle formed by dividing the angle 360 ° at which the rotating means makes one rotation into n equal parts and α is an angle between α and an integer multiple of the angle α, and the first heating means and the second heating means And a control means for rotating the rotation means according to the angle β and subsequently heating the second heating means after the first heating means. provided,
The adhesion preventing member is a plate-shaped member provided closer to the evaporation source and closer to the second heating means side for the main heating, and separated from the first heating means side for the preliminary heating, Being arranged to be inclined toward the first heating means with a predetermined elevation angle ,
The vapor deposition apparatus characterized by this.

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