JP4062283B2 - Manufacturing method of liquid crystal display device - Google Patents

Description

  The present invention relates to a method for manufacturing an active matrix liquid crystal display device using thin film transistors.

  Conventionally, an active matrix liquid crystal display device (liquid crystal display) having a structure in which a thin film transistor side substrate, a counter substrate, and a TN (twisted nematic) liquid crystal or a ferroelectric liquid crystal as an electro-optic modulation material are sandwiched between these substrates. Panel) is known. In this liquid crystal display device, a thin film transistor (TFT) and a pixel electrode selectively driven thereby are provided on a thin film transistor side substrate, and a counter electrode is provided on a counter substrate. In order to realize color display in such a liquid crystal display device, it is necessary to dispose transmissive color filters having red (R), green (G), and blue (B) colors for each display pixel.

  FIG. 1 shows an example of a conventional liquid crystal display device having such a color filter. (In the drawings shown below, the size of a thin film transistor is made larger than the actual size in order to clearly show the structure of the thin film transistor. Is also greatly represented.) A liquid crystal 103 is sealed between the thin film transistor side substrate 101 and the counter substrate 102 which are provided to face each other. The counter substrate 102 is formed with a black matrix 104 made of a light-shielding film such as chromium, and red, green, and blue color filter portions 105, 106, and 107 made of gelatin dyed in red, green, and blue. A counter electrode 109 made of a protective insulating film 108 and a transparent conductive film is formed thereon. On the other hand, the thin film transistor side substrate 101 is provided with a pixel electrode 111 made of a thin film transistor 110 and a transparent conductive film selectively driven thereby. On the pixel electrode 111 and the counter electrode 109, alignment films 112 and 113 are laminated and rubbed. Note that an insulating film 116 serving as a protective film is formed on the source electrode 115, and the insulating film is removed above the pixel electrode 111 to open a window. As a result, the source electrode 115 can be protected and a situation in which the voltage applied to the liquid crystal is reduced due to the presence of the insulating film can be prevented.

  However, the conventional example has the following problems.

  That is, in the above conventional example, the color filter and the black matrix are provided not on the thin film transistor side substrate but on the counter substrate. For this reason, a process of forming a color filter or the like is required for manufacturing the counter substrate, and there is a problem that the cost of the counter substrate becomes very expensive. In addition, when the thin film transistor side substrate and the counter substrate are bonded to each other, it is difficult to accurately align the pixel electrode formed on the thin film transistor side substrate with the color filter and the black matrix formed on the counter substrate. there were.

  For example, Japanese Patent Laid-Open No. 2-207222 discloses a method of forming a light shielding layer to be a black matrix on a thin film transistor side substrate. Japanese Patent Laid-Open Nos. 4-253028 and 6-242433 disclose a method of forming a color filter or the like on a thin film transistor side substrate. According to these methods, since the color filter and the black matrix can be provided on the thin film transistor side substrate, it is possible to solve the problem of increasing the cost of the counter substrate and the alignment accuracy. However, these methods require a new process of forming a color filter or the like on the thin film transistor side substrate, and there is a problem that the yield of manufacturing a liquid crystal display device is reduced by the addition of the new process.

  In addition, it is not known that a conventional reflective liquid crystal display device has a color filter built in a thin film transistor side substrate. In addition, since a reflective liquid crystal display device does not have a backlight or the like, improvement in aperture ratio is a major technical problem.

Further, as shown in FIG. 1, the conventional example has a problem that it is necessary to remove the insulating film on the pixel electrode 111 after forming the insulating film 116 as a protective film.
JP-A-2-207222 JP-A-4-253028 JP-A-6-242433

  The present invention has been made to solve the technical problems described above. The object of the present invention is to provide an active device that can reduce the number of steps and increase the production yield while forming a color filter or the like on the thin film transistor side substrate. An object of the present invention is to provide a method for manufacturing a matrix type liquid crystal display device.

In order to solve the above-described problems, the present invention provides a method of manufacturing a liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. Because
Forming an inorganic pixel electrode material as a material of a pixel electrode selectively driven by the thin film transistor on the thin film transistor side substrate;
Forming a plurality of colored layers made of a water-repellent color resist on the pixel electrode material;
Patterning the pixel electrode material using the plurality of colored layers as a mask to form a plurality of pixel electrodes;
The LPD method is used to immerse the thin film transistor side substrate in a liquid material in which a pigment as a light shielding substance is dissolved, and the pigment is added inside the plurality of pixel electrodes except on the colored layer. And selectively forming an insulating film of
The liquid material is obtained by adding the dye as the light-shielding substance to a saturated aqueous solution of hydrofluoric acid in which an inorganic compound is dissolved, and the colored layer has liquid repellency with respect to the liquid material. The present invention relates to a liquid crystal display device manufacturing method.

  In the method for manufacturing a liquid crystal display device according to the present invention, the colored layer may include a conductive material.

  In the method for manufacturing a liquid crystal display device according to the present invention, the colored layer contains a conductive substance, and the ratio of the solid component containing the pigment and the conductive substance in the colored layer in the color resist is 30% or less. It may be.

  In the method for manufacturing a liquid crystal display device according to the present invention, the colored layer may include a resist in which a pigment is dispersed.

  In the method for manufacturing a liquid crystal display device according to the present invention, the colored layer may include a dyed polymer material.

  In the method for manufacturing a liquid crystal display device according to the present invention, the colored layer may be made of ink.

In the method for manufacturing a liquid crystal display device according to the present invention, the pixel electrode may include a non-translucent material.
In the method for manufacturing a liquid crystal display device according to the present invention, the inorganic compound may contain silica.
In the method for manufacturing a liquid crystal display device according to the present invention, the step of forming the light-shielding insulating film may include a step of adding an additive to the liquid material in which the thin film transistor side is immersed.

(1) An active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
An active matrix type liquid crystal display, wherein a conductive colored layer is provided on the thin film transistor side substrate as a color filter for color display, and the conductive colored layer also serves as a pixel electrode selectively driven by the thin film transistor apparatus.

(2) In the invention of (1),
An active matrix liquid crystal display device, wherein the conductive coloring layer is formed by dyeing a dyeing medium in which a conductive substance is dispersed.

(3) In the invention of (1),
An active matrix liquid crystal display device, wherein the conductive coloring layer is a conductive color resist formed by dispersing a dye and a conductive substance in a resist.

(4) In the invention of (3),
An active matrix liquid crystal display device, wherein a ratio of a solid component containing the dye and the conductive substance in the color resist is 30% or less.

(5) In the invention of (3) or (4),
Saturation of a compound containing a black matrix formed by an insulating film formed in a region where the color resist pattern is not formed, wherein the insulating film of the black matrix includes at least one substance constituting an insulating substance An active matrix type liquid crystal display device, wherein a film is formed by including a light-shielding dye in an aqueous solution, bringing the saturated aqueous solution into a supersaturated state and precipitating the insulating material.

(6) In the invention of (5),
An active matrix liquid crystal display device, wherein the insulating film is formed of a silicon oxide film.

(7) In any one of the inventions (1) to (6),
An active matrix liquid crystal display device, wherein a conductive layer for contacting the drain region and the conductive colored layer is interposed between a drain region of the thin film transistor and the conductive colored layer.

(8) In the invention of (7),
The active matrix liquid crystal display device, wherein the conductive layer is formed of the same material as a source line connected to a source region of the thin film transistor.

(9) In the invention of (7) or (8),
An active matrix liquid crystal display device, wherein the conductive layer is formed in a peripheral portion of the pixel electrode.

(10) In any of the inventions of (7) to (9),
An active matrix type liquid crystal display device, wherein the conductive layer is a part of a black matrix serving as a light shielding layer.

(11) A reflective active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
A conductive colored layer is provided on the thin film transistor side substrate as a color filter for color display, a pixel electrode selectively driven by the thin film transistor is provided below the colored layer, and the pixel electrode is non-translucent A reflective active matrix liquid crystal display device comprising the following materials.

(12) In the invention of (11),
A reflective active matrix liquid crystal display device, wherein the pixel electrode is formed of the same material as a source line connected to a source region of the thin film transistor.

(13) In the invention of (11) or (12),
A reflective active matrix liquid crystal display device, wherein the liquid crystal element is a polymer dispersed liquid crystal element.

(14) In any of the inventions of (11) to (13),
A reflective active matrix liquid crystal display device, wherein the conductive colored layer is formed by dyeing a dyeing medium in which a conductive substance is dispersed.

(15) In any of the inventions of (11) to (13),
A reflective active matrix liquid crystal display device, wherein the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in a resist.

(16) In the invention of (15),
A reflective active matrix liquid crystal display device, wherein a ratio of a solid component containing the dye and the conductive material in the color resist is 30% or less.

(17) An active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
A color resist is provided on the thin film transistor side substrate as a color filter for color display, a pixel electrode selectively driven by the thin film transistor is provided below the color resist, and the pixel electrode is used as a mask. An active matrix liquid crystal display device characterized by being patterned.

(18) In the invention of (17),
Saturation of a compound containing a black matrix formed by an insulating film formed in a region where the color resist pattern is not formed, wherein the insulating film of the black matrix includes at least one substance constituting an insulating substance An active matrix type liquid crystal display device, wherein a film is formed by including a light-shielding dye in an aqueous solution, bringing the saturated aqueous solution into a supersaturated state and precipitating the insulating material.

(19) In the invention of (18),
An active matrix liquid crystal display device, wherein the insulating film is formed of a silicon oxide film.

(20) In any of the inventions of (17) to (19),
An active matrix liquid crystal display device, wherein the color resist is a conductive colored layer formed by dispersing a dye and a conductive substance in the resist.

(21) In the invention of (20),
An active matrix liquid crystal display device, wherein a ratio of a solid component containing the dye and the conductive substance in the color resist is 30% or less.

(22) In any of the inventions of (1) to (16) and (20) and (21),
An active matrix liquid crystal display device, wherein the conductive colored layer has a specific resistance of 1 × 10 7 Ω · cm or less.

(23) In any of the inventions of (1) to (16) and (20) and (21),
An active matrix liquid crystal display device, wherein the conductive colored layer has a specific resistance of 1 × 10 6 Ω · cm or less.

(24) In any of the inventions of (1) to (16) and (20) and (21),
An active matrix liquid crystal display device, wherein the conductive colored layer is formed by dispersing conductive fine particles having a dish-like shape in the colored layer.

(25) In any of the inventions of (1) to (16) and (20) and (21),
An active matrix liquid crystal display device, wherein the conductive colored layer is formed by dispersing conductive fine particles having a rod-like shape in the colored layer.

(26) In any of the inventions of (1) to (16) and (20) to (25),
An active matrix liquid crystal display device, wherein the conductive colored layer is formed by dispersing conductive fine particles hydrophobically treated with a coupling agent in the colored layer.

(27) An active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
A pixel electrode selectively driven by the thin film transistor, a resist provided on the pixel electrode and used for patterning the pixel electrode, and an insulating film formed in a region where the resist pattern is not formed, An active matrix liquid crystal display device, wherein the insulating film is formed by bringing a saturated aqueous solution of a compound containing at least one substance constituting the insulating substance into a supersaturated state and precipitating the insulating substance.

(28) A method of manufacturing an active matrix liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
Forming a contact hole for making contact with the drain region of the thin film transistor;
An active matrix type liquid crystal display comprising: a color filter for color display, and forming a conductive colored layer connected to the drain region through the contact hole on the thin film transistor side substrate Device manufacturing method.

(29) In the invention of (28),
The conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in a resist,
In a region where the pattern of the color resist is not formed, a light-shielding dye is contained in a saturated aqueous solution of a compound containing at least one material constituting the insulating material, and the saturated aqueous solution is made supersaturated to deposit the insulating material. A method of manufacturing an active matrix type liquid crystal display device comprising a step of forming an insulating film to be a black matrix by a film forming method.

(30) In the invention of (28) or (29),
Including a step of forming a conductive layer for contacting the drain region of the thin film transistor and the conductive colored layer between the step of forming the contact hole and the step of forming the conductive colored layer. A method for manufacturing an active matrix liquid crystal display device.

(31) A method for manufacturing a reflective active matrix liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. There,
Forming a pixel electrode made of a non-translucent material that is selectively driven by the thin film transistor;
Forming a conductive colored layer serving as a color filter for color display on the pixel electrode. A method for manufacturing a reflective active matrix liquid crystal display device.

(32) A method of manufacturing an active matrix liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
Forming a pixel electrode material to be a material of a pixel electrode selectively driven by the thin film transistor;
Forming a color resist to be a color filter for color display on the pixel electrode material;
And a step of patterning the pixel electrode material using the color resist as a mask.

(33) In the invention of (32),
In a region where the pattern of the color resist is not formed, a light-shielding dye is contained in a saturated aqueous solution of a compound containing at least one material constituting the insulating material, and the saturated aqueous solution is made supersaturated to deposit the insulating material. A method of manufacturing an active matrix type liquid crystal display device comprising a step of forming an insulating film to be a black matrix by a film forming method.

(34) A method of manufacturing an active matrix liquid crystal display device comprising a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
Forming a pixel electrode material to be a material of a pixel electrode selectively driven by the thin film transistor;
Forming a resist for pixel electrode patterning on top of the pixel electrode material;
Patterning the pixel electrode material using the color resist as a mask;
An insulating film serving as a protective film by a film forming method in which a saturated aqueous solution of a compound containing at least one substance constituting an insulating substance is supersaturated in a region where the resist pattern is not formed, and the insulating substance is deposited. The manufacturing method of the active-matrix type liquid crystal display device characterized by including the process of forming.

  According to the invention of (1) or (28), the conductive colored layer to be a color filter is provided on the thin film transistor side substrate. Thereby, it is not necessary to form a color filter on the counter substrate, and it is not necessary to match the counter substrate and the thin film transistor side substrate. Further, according to the present invention, this conductive colored layer also serves as the pixel electrode. Accordingly, the step of forming a pixel electrode material such as ITO and the step of patterning the pixel electrode material can be omitted. Further, in the configuration in which the color filter is formed on the pixel electrode material, there arises a problem that the effective voltage applied to the liquid crystal is reduced and a problem that an alignment margin between the pixel electrode and the color filter is required. Then, this problem can be effectively prevented.

  According to the invention of (2), the conductive colored layer is formed by dyeing a dyeing medium such as gelatin in which a conductive substance is dispersed with a predetermined dyeing solution. According to the present invention, since a colored layer is formed by a dyeing method, color purity (color characteristics) can be improved as compared with a method of dispersing a pigment or the like.

  According to the invention of (3), the color filter is formed by the conductive color resist. As a result, it is possible to adopt a technique such as selectively forming an insulating film by the LPD method using the conductive color resist as a mask.

  According to the invention of (4), secondary agglomeration of solid components contained in the conductive color resist is prevented, and the pot life can be improved.

  According to the invention of (5) or (29), the black matrix can be formed by a technique using the LPD method. Therefore, it is possible to form an insulating film serving as a black matrix at a low temperature of about room temperature, an insulating film to which a dye is added can be easily formed, and an inorganic insulating film having higher heat resistance and chemical resistance than gelatin or the like. Can be obtained. In addition, since the LPD method is used in the present invention, an insulating film serving as a black matrix can be selectively formed with respect to the conductive color resist pattern. Thereby, the etching process of the insulating film can be omitted, and the black matrix can be accurately formed in self-alignment with the color resist. Further, according to the present invention, since the black matrix is formed of an insulating film to which a pigment is added, problems such as glare and cracks can be solved. In addition, according to the present invention, the problem of the conventional example in which the wiring layer or the like is a black matrix, that is, the problem caused by the parasitic capacitance between the pixel electrode and the gate line can be prevented.

  According to the invention of (6), the insulating film serving as the black matrix can be formed of the silicon oxide film having good compatibility with the thin film transistor manufacturing process. This facilitates selection of chemicals used in the manufacturing process. In addition, even when the insulating film and the black matrix in the thin film transistor have a multi-layer structure, since these are formed of the same material, adverse effects of distortion caused by stress or the like can be reduced.

  According to the invention of (7) or (30), good contact can be made between the conductive colored layer to be the pixel electrode and the drain region of the thin film transistor, and contact resistance can be reduced. Thereby, the effective voltage applied to the liquid crystal element can be increased.

  According to the invention of (8), since the conductive layer is formed of the same material as the source line, it is not necessary to add a new photo and etching process to form the conductive layer.

  According to the invention of (9), the parasitic resistance between the drain region of the thin film transistor and each part of the pixel electrode can be reduced.

  According to the invention of (10), the conductive layer provided in the peripheral portion can be effectively used as a black matrix.

  According to the invention of (11) or (31), a reflective type active is formed by forming a color filter comprising a conductive colored layer on a pixel electrode formed of a non-translucent (light reflective) material. A matrix liquid crystal display device can be realized. According to the present invention, since the color filter is formed on the thin film transistor side substrate, the aperture ratio can be improved. Further, since the color filter has conductivity, it is possible to prevent a voltage division problem caused by the color filter interposed between the pixel electrode and the liquid crystal element.

  According to the invention of (12), since the pixel electrode and the source line can be formed in the same process, the process can be simplified and the cost can be reduced.

  According to the invention of (13), the use of the polymer dispersion type liquid crystal element makes it possible to eliminate the need for a polarizing plate and to provide a good reflection type liquid crystal display device and the like.

  According to the invention of (17) or (32), the pixel electrode made of ITO or the like is arranged below the color resist. Therefore, even if the color resist has a high resistance, it is possible to effectively prevent a reduction in the effective voltage applied to the liquid crystal due to the high resistance. Further, according to the present invention, since the patterning of the pixel electrode material is performed using the color resist as a mask, the step of forming a resist for patterning the pixel electrode can be omitted.

  According to the invention of (18) or (33), the black matrix is formed by a technique using the LPD method. Therefore, it is possible to form an insulating film serving as a black matrix at a low temperature and to selectively form an insulating film with respect to a color resist.

  According to the invention of (22), it is possible to perform a good liquid crystal driving operation for a liquid crystal panel having a relatively small scale and loose specifications.

  According to the invention of (23), a good liquid crystal driving operation is possible even for a large-scale liquid crystal panel with strict specifications.

  According to the invention of (24) or (25), the overlap area between the conductive fine particles in the colored layer can be increased, and the specific resistance of the conductive colored layer can be lowered.

  According to the invention of (26), it is possible to prevent the secondary aggregation or the like of the hydrophilic conductive fine particles from occurring and to obtain a uniform dispersed state.

  According to the invention of (27) or (34), an insulating film serving as a protective film can be formed using the resist for patterning the pixel electrode material using the LPD method. As a result, the step of removing the insulating film above the pixel electrode, which was necessary in the conventional example, can be omitted. In addition, since the present invention uses the LPD method, it is possible to form an insulating film serving as a protective film at a low temperature and to selectively form an insulating film with respect to a resist.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1. First Example The first example is an example in which a conductive colored layer is provided on a thin film transistor side substrate as a color filter, and this conductive colored layer is also used as a pixel electrode. 2A to 2C show an example of a process cross-sectional view of the first embodiment. A thin film transistor 202 is formed inside the thin film transistor side substrate 201. The thin film transistor 202 includes a gate line 203, a source line 204, an insulating film 205, and the like (FIG. 2A).

  Next, a contact hole is opened, and then a pattern of a red color resist 206, a green color resist 207, and a blue color resist 208 is sequentially formed (FIG. 2B). As such a color resist, for example, a pigment dispersion type resist formed by dispersing a pigment in the resist can be used.

In this embodiment, the color resists 206 to 208 serving as color filters have a conductive property. The conductive color resist can be formed, for example, by mixing fine particles such as ITO (indium oxide) and SnO ₂ (tin oxide), which are materials for the transparent conductive film, with the color resist. In addition, by providing conductivity to the color resists 206 to 208 as described above, these color resists are used as a color filter provided on the thin film transistor side substrate and also used as a pixel electrode for driving a liquid crystal element. It becomes possible. For this reason, the conductive color resists 206 to 208 and the drain region 209 of the thin film transistor 202 are connected via a contact hole.

  After forming conductive color resists 206 to 208 that also serve as color filters and pixel electrodes in this way, an insulating film 220 serving as a protective film for the source line 204 is formed as necessary. Next, desirably, the insulating film formed on the color resist is removed. This is because if an insulating film is present on the color resist, the effective voltage applied to the liquid crystal decreases and the image quality deteriorates. Thereafter, an alignment film 222 is laminated and subjected to a rubbing process. On the other hand, the counter substrate 217 has a structure in which a counter electrode 218 made of a transparent conductive film and an alignment film 221 are provided on the inner side. Liquid crystal 219 is sealed between the thin film transistor side substrate 201 and the counter substrate 217 (FIG. 2C).

  Note that a black matrix serving as a light shielding layer may be formed on the counter substrate 217, or part or all of the gate line 203, the source line 204, and the like may be used as the black matrix. Further, the black matrix may be formed on the thin film transistor side substrate by using any method.

  According to this embodiment, a color filter made of a conductive color resist is provided on the thin film transistor side substrate. Thereby, it is not necessary to form a color filter on the counter substrate, and the manufacturing cost of the counter substrate can be reduced. In addition, the problem of margin of accuracy of bonding between the thin film transistor side substrate and the counter substrate can be solved.

  In addition, according to this embodiment, the conductive color resist serving as the color filter also serves as the pixel electrode, so that the process of forming ITO serving as the pixel electrode and the process of patterning ITO can be omitted. Thereby, cost reduction and yield improvement can be achieved. For example, this embodiment has the following advantages as compared with a configuration in which a color filter made of a color resist or the like is formed on a pixel electrode made of ITO. In other words, when the color filter is formed above the pixel electrode, the voltage at the time of driving the liquid crystal is applied to the color filter, and the voltage (effective voltage) applied to the liquid crystal element is reduced by voltage division. Cause. On the other hand, in this embodiment, since the conductive color resists 206 to 208 serve as the pixel electrode and the color filter, it is possible to effectively prevent such a problem of image quality deterioration. Furthermore, according to the present embodiment, the aperture ratio can be increased as compared with the configuration in which the color filter is formed above the pixel electrode. That is, according to the configuration in which the color filter is formed on the upper part of the pixel electrode, an alignment margin between the pixel electrode and the color filter is required, but according to the present embodiment, the aperture ratio is increased by an amount that does not require such an alignment margin. be able to.

(1) Conductive colored layer The conductive colored layer may be formed by dispersing a pigment such as a pigment and a conductive material such as ITO in the resist as in the above embodiment. For example, it can be formed by dyeing a staining medium such as gelatin (polymer material) in which a conductive substance is dispersed, or by mixing a conductive substance into printing ink or the like.

  In the case of dispersing a dye and a conductive substance in the resist, it is necessary to suppress the ratio of solid components such as the dye and the conductive substance to a certain value or less. This is because when the ratio of the solid component in the resist solution is high, the pot life (the time during which a usable liquid state is maintained) is shortened. That is, solid components such as dyes and conductive substances are aggregated, making it impossible to use the resist solution, which hinders production in factories and the like. FIG. 13 shows an example of the relationship between the solid component ratio and the pot life. For example, in order to make the pot life 3 months or more, the solid component ratio needs to be about 30% or less, and in order to make it 6 months or more, it is necessary to make it about 25% or less. Therefore, in order to make the pot life more reasonable, the solid component ratio is preferably about 30% or less, and more preferably about 25% or less. In order to reduce the solid component ratio, the conductive material contained in the resist may be reduced. However, if the amount is too small, the specific resistance of the conductive colored layer increases. Therefore, in consideration of the relationship between pot life and specific resistance, the solid component ratio needs to be the most balanced.

  In the case of dispersing a pigment or the like in the resist, although not particularly limited, examples of red pigments include perylene, anthraquinone, dianthraquinone, azo, diazo, quinacridone, and anthracene pigments. Examples of green pigments include halogenated phthalocyanine pigments. Examples of blue pigments include metal phthalocyanine, indanthrone, and indophenol pigments. In addition, purple, yellow, cyanine and magenta pigments can be used in combination. The color resist of this embodiment may be not only negative type but also positive type. Examples of the negative type resist include solvents (ethyl-3-ethoxypropionate, methoxypropyl acetate, cyclohexane, 3-methoxybutyl acetate, etc.). And a resin (methacrylic resin etc.) and a monomer (multi-sensitive acrylic monomer etc.) are considered.

  The method of forming a conductive colored layer by dyeing a dyeing medium in which a conductive substance is dispersed has an advantage that the color purity of the conductive colored layer can be increased as compared with a method of dispersing a pigment or the like in a resist. That is, when a pigment or the like is used, the more the pigment or the like is dispersed, the lower the transmittance. In order to compensate for this decrease in transmittance, it is necessary to widen the wavelength range of transmitted light. For example, when a green color is to be expressed, a yellow pigment or the like is mixed. For this reason, color purity (color characteristics) deteriorates. On the other hand, the above-described problem does not occur when a colored layer is formed by dyeing gelatin or the like, and as a result, the color purity can be further increased.

  As a staining medium (chromosome), in addition to gelatin, casein, fish mulled, polyvinyl alcohol, polyvinyl pyrovidone, polyvinyl alcohol, polyimide, polyamide, polyurea, polyurethane, polycinnamic acid, acrylic resin, and derivatives thereof are used. it can. Acid dyes, reactive dyes, etc. can be used as the dyeing liquid, kayanol milling red RS (manufactured by Nippon Kayaku) + acetic acid + water as the red dyeing liquid, and brilliant Indian blue (as the green dyeing liquid). Hoechst) + Suminor Yellow MR (Sumitomo Chemical Co.) + Acetic acid + water, and Kayanol Sayanin 6B (Nippon Kayaku) + acetic acid + water can be used as the blue dye solution. However, the dye solution is not limited to these. There are various methods for forming a colored layer (color filter) by a dyeing method. In general, for example, a dyeing medium is patterned by exposure and development, and then immersed in a red dyeing solution to form a red colored layer. The same applies to the blue and green colored layers.

(2) Conductivity The conductive colored layer in the present embodiment also has predetermined impedance components (specific resistance and capacitance component). Therefore, the conductive colored layer is interposed between the drain region and the liquid crystal, so that there is a considerable problem that the effective voltage applied to the liquid crystal is lowered. Therefore, the specific resistance of the conductive colored layer is desirably as small as possible. For example, FIGS. 14A to 14C show liquid crystal panels considered to have the strictest specifications, that is, a diagonal length of 30 cm (about 12 inches) and an XGA (for example, 1024 × RGB × 768 pixels and a dot clock of 65 MHz. The relationship (simulation result) between the specific resistance and effective value in the liquid crystal panel is shown. FIGS. 14A, 14B, and 14C show the specific resistance and effective for the pixel closest to the driver circuit that drives the panel, the pixel in the middle, and the pixel farthest, respectively. It is the relationship with the value difference. Here, the “difference in effective value” means an effective voltage value applied to the liquid crystal element when the conductive colored layer is not present, and an effective voltage value applied to the liquid crystal element when the conductive colored layer is present. Is the difference. As shown in FIGS. 14A to 14C, when the specific resistance is about 1 × 10 ⁶ Ω · cm or less, the difference between the effective values increases, and the display characteristics deteriorate. As is clear from the figure, the degree of deterioration in display characteristics is larger in the case of black display than in the case of gray display / white display. As described above, it is desirable that the specific resistance is about 1 × 10 ⁶ Ω · cm or less in order to perform the liquid crystal driving operation normally in the liquid crystal panel considered to have the strictest specifications.

However, depending on the panel, normal operation may be possible even if the specific resistance is greater than 1 × 10 ⁶ Ω · cm. For example, in FIGS. 15A and 15B, a liquid crystal panel whose specifications are considered relatively loose That is, the relationship between the specific resistance and the difference in effective value in a liquid crystal panel of a VGA (for example, 640 × RGB × 480 pixels and a dot clock of about 25.2 MHz) with a diagonal length of 15 cm (about 6 inches) is shown. FIGS. 15A and 15B show the relationship between the specific resistance and the difference between the effective values of the pixel at the center position and the farthest position from the driver circuit that drives the panel. As is clear from this figure, in order to perform the liquid crystal driving operation normally in this liquid crystal panel, the specific resistance should be about 1 × 10 ⁷ Ω · cm or less.

From the above, the specific resistance of the conductive colored layers, the size of the liquid crystal panel, although depends on the display characteristics such aims, it is desirable that not more than about ^{1 × 10 7 Ω · cm,} 1 × 10 6 Ω · cm More preferably, it is less than about.

(3) Shape of conductive fine particles, etc. The conductive material contained in the colored layer is preferably in the form of fine particles. This is to minimize the decrease in the transmittance of the color resist due to the inclusion of the conductive material. For the same reason, it is desirable that the conductive material to be dispersed has transparency. For this reason, ITO (indium oxide), SnO ₂ (tin oxide) or the like is optimal as the conductive substance. Or the mixed material of these, carbon, gold | metal | money, and silver can also be used.

  Further, when the conductive material is in the form of fine particles, the shape of the fine particles is preferably a dish shape or a rod shape rather than a spherical shape. This is because if the plate shape or the rod shape is used, the overlap area between adjacent fine particles can be increased, and as a result, the current can be more easily flowed and the specific resistance can be lowered. That is, in order to reduce the specific resistance, the ratio of the conductive fine particles to be dispersed may be increased. However, if the ratio is increased too much, for example, the transmittance decreases, the color characteristics decrease, and the above-mentioned problems such as pot life occur. If the shape is such that the overlap area between adjacent fine particles such as a plate shape or a rod shape can be increased, the specific resistance can be lowered without increasing the proportion of the conductive fine particles.

  Further, in order to realize a uniform dispersion state of the conductive substance, it is desirable that the conductive fine particles are subjected to a hydrophobic treatment to make the surface hydrophobic. That is, when the conductive fine particles have a hydrophilic surface, since many of the pigments such as pigments have a hydrophobic surface, secondary aggregation of the hydrophilic conductive fine particles occurs and a uniform dispersion state is obtained. Because there is no possibility. The hydrophobic treatment can be realized by using, for example, a coupling agent, and various coupling agents such as silane, titanate, and chromium can be used.

2. Second Embodiment The second embodiment shows an example of a technique in the case where the black matrix is built in the thin film transistor side substrate in the first embodiment. The difference from the first embodiment is that the black matrix 310 is formed using the LPD method in FIG. The LPD method is characterized in that no silicon oxide film is deposited on the resist pattern. By using this property, a silicon oxide film can be selectively formed with respect to the conductive color resist pattern. Therefore, after forming conductive color resists 306 to 308 in FIG. 3B, an LPD method is used in FIG. 3C to selectively select the patterns of these conductive color resists 306 to 308. Then, a silicon oxide film to which a pigment such as black is added is formed, and this silicon oxide film is used as a black matrix 310. As a result, the black matrix 310 can be incorporated in the thin film transistor side substrate by a simple method.

Next, details of the LPD method will be described by taking a case of forming a silicon oxide film as an example. In the LPD method, silica is dissolved in hydrofluoric acid (H ₂ SiF ₆ ) to form a saturated aqueous solution, and the substrate is immersed in this. Thereafter, aluminum, aluminum chloride, boron, boric acid or the like is added to create a supersaturated state, and a silicon oxide film is deposited and grown on the substrate surface.

For example, in the above chemical formulas (1) and (2), by adding boric acid (H ₃ BO ₃ ) as an additive, the chemical reaction of chemical formula (2) proceeds to the right, and hydrofluoric acid (HF) Is consumed. Thereby, the chemical reaction of the chemical formula (1) proceeds in the right direction, and a silicon oxide film (SiO ₂ ) is deposited. As described above, in the LPD method, a saturated aqueous solution of a compound containing at least one substance constituting an insulating substance, for example, silicon (Si) is prepared. Then, the saturated aqueous solution is brought into a supersaturated state by adding an additive, for example, and an insulating material is deposited to form an insulating film. At this time, in this embodiment, the saturated aqueous solution contains a pigment such as black, whereby an insulating film having a pigment such as black added therein, that is, a black matrix can be obtained.

  The chemical formula in the case of using aluminum as an additive is shown below.

In the above equation, by adding aluminum (Al) as an additive, the chemical reaction of the chemical formula (4) proceeds in the right direction, and hydrofluoric acid (HF) is consumed. As a result, the chemical reaction of the chemical formula (3) proceeds in the right direction, and a silicon oxide film (SiO ₂ ) is deposited.

  As described above, in this embodiment, since the insulating film serving as the black matrix is formed by the technique using the LPD method, the insulating film can be formed at a low temperature of about room temperature. If the insulating film can be formed at a low temperature, damage to the glass substrate during the formation of the insulating film can be reduced, so that an inexpensive glass substrate can be employed and the product cost can be kept low. In addition, it is possible to prevent a situation in which the device characteristics of the thin film transistor are deteriorated due to the heating temperature when forming the black matrix.

  In this embodiment, since the LPD method is used, it is possible to easily form an insulating film to which a dye is added. For example, when an insulating film is formed, a chemical vapor deposition method (CVD method) is generally used. However, the pigment such as a pigment is usually a solid, and it is not easy to add the solid pigment to the insulating film by the CVD method. On the other hand, if the LPD method is used, an insulating film having a dye added therein can be easily obtained simply by dissolving the solid dye in a saturated aqueous solution. A major feature of this example is that the black matrix that needs to be colored is formed using the LPD method in which a dye can be easily added.

  Further, since the insulating film of this embodiment formed using the LPD method is an inorganic insulating film, an insulating film having higher heat resistance and chemical resistance than gelatin and resist can be obtained.

  Further, in this embodiment, since the LPD method is used, an insulating film can be selectively formed on the conductive color resist pattern. That is, the LPD method has a feature that the insulating material is not deposited on the resist. This is because the surface of the resist has water repellency. If this feature is used, an etching process at the time of pattern formation becomes unnecessary, and the cost of the product can be reduced. Further, since the black matrix can be formed in a self-aligned manner with respect to the color resist, the black matrix can be formed with high accuracy, and the aperture ratio can be improved.

  The black matrix in the present embodiment is arranged between color filters arranged in a stripe type, mosaic type, triangle type, four pixel arrangement type, or the like, and serves as a light shielding layer. Conventionally, this black matrix is formed by a light shielding film made of chromium or the like. For this reason, there are problems such as cracks due to stress and glare due to reflection of chromium or the like. On the other hand, in this embodiment, since the black matrix is formed of an insulating film to which a pigment is added, problems such as such cracks and glare can be solved.

  Further, according to this embodiment, the problem that occurs in the conventional example in which the wiring layer or the like is a black matrix, that is, the problem of the parasitic capacitance between the pixel electrode and the gate line does not occur, so that the image quality can be prevented from being degraded.

  In the present embodiment, the insulating film constituting the black matrix is preferably a silicon oxide film. This is because the silicon oxide film is generally used as an insulating film in the manufacturing process of thin film transistors, LSIs, etc., and is excellent in heat resistance and chemical resistance. That is, the compatibility with the manufacturing process of thin film transistors and the like is better than the material used for the conventional black matrix. This compatibility becomes a problem particularly when the black matrix is formed on the thin film transistor side substrate. In this case, the black matrix is also formed by the same manufacturing process as the thin film transistor. Therefore, if a silicon oxide film or the like generally used in the manufacture of thin film transistors is used as the material of the black matrix, for example, it is not necessary to consider so much the etching solution, temperature, etc. used after the black matrix formation step. This facilitates selection of chemicals used in the manufacturing process. In addition, even when the insulating film and the black matrix in the thin film transistor have a multi-layer structure, since these are formed of the same material, adverse effects of distortion caused by stress or the like can be reduced. Further, the silicon oxide film constituting the black matrix can also be used as an insulating film (source line protective film) of the thin film transistor.

  In this embodiment, not only a silicon oxide film, but also a film made of a material equivalent to this silicon oxide film, a titanium oxide film, etc. can be adopted. You can adopt things.

  When the insulating film is a silicon oxide film, the silicon oxide film can be formed by adding an additive made of aluminum or an aluminum compound, or an additive made of boron or a boron compound to hydrofluoric acid. desirable. Elements constituting the additive used by the LPD method remain in the insulating film as impurities. Therefore, it is desirable that the remaining element does not adversely affect the thin film transistor, for example. Aluminum or the like is normally used in processes such as thin film transistors. An insulating film containing boron or the like is used as an insulating film called BPSG in the LSI process. Therefore, even if these elements remain in the insulating film, it is considered that there is little adverse effect on the thin film transistor and the like.

  In this embodiment, a pigment is desirable as a coloring matter to be included in the insulating film. This is because the pigment has a relatively high heat resistance, and accordingly, when the heat resistance of a color filter or the like is increased, it is desirable to increase the heat resistance of the dye accordingly. However, the pigment contained in the insulating film is not limited to this, and for example, a dye or the like may be used. As the black pigment to be included in the insulating film in this embodiment, carbon-based pigments can be considered. In addition, a water-soluble pigment is preferable as the pigment used in the LPD method.

3. Third Embodiment The third embodiment is an embodiment in which a conductive layer such as a metal is interposed between the conductive colored layer (color resist) and the drain region of the thin film transistor. 4A to 4D show an example of a process cross-sectional view of the third embodiment. A difference from the first embodiment is that, in FIG. 4B, after a contact hole is opened, a conductive layer 411 for making contact between the drain region 409 and the pixel electrode is formed. The conductive layer 411 is made of metal or the like. After the conductive layer 411 is formed, conductive color resists 406 to 408 that also serve as color filters and pixel electrodes are formed as shown in FIG.

  According to this embodiment, good contact can be made between the conductive color resists 406 to 408 to be the pixel electrodes and the drain region 409, and the contact resistance can be reduced. Thereby, the effective voltage applied to the liquid crystal element can be increased, and the display characteristics can be improved. In this case, the material of the conductive layer 411 is preferably one that can sufficiently reduce the contact resistance with the drain region and the contact resistance with the conductive color resist.

  For example, FIGS. 5A to 5C show an example in which the conductive layer is formed of the same material as the source line. That is, in FIG. 5A, when the source line 504 is formed by patterning, a conductive layer 512 made of the same material as the source line 504 is also formed by patterning. Thereafter, conductive color resists 506 to 508 are formed as shown in FIG. Thus, according to the method of forming the conductive layer 512 with the same material as the source line 504, it is not necessary to add a new photo and etching process to form the conductive layer, and the number of processes is reduced and the yield is improved. Can be achieved.

  FIG. 6 is a plan view showing the structure of this embodiment. As shown in FIG. 6, in this embodiment, the conductive layer 512 made of metal or the like is drawn out from the contact hole 513, and between the conductive color resist 506 so that the contact resistance with the conductive color resist becomes sufficiently low. The size of the contact area is determined. However, in the case where the conductive layer 512 is made of a non-translucent material, if the contact area is excessively increased, the aperture ratio is reduced. Therefore, the size of the contact area depends on the required contact resistance and aperture ratio. Need to be determined.

  FIG. 7 shows an example in which the conductive layer 512 is formed in the periphery of the conductive color resist 506 to be a pixel electrode. That is, in the structure of FIG. 6 in which the conductive layer 512 is formed only in the periphery of the contact hole 513, for example, the parasitic resistance between the portion of the point K in FIG. 7 and the drain region 509 of the thin film transistor increases. When this parasitic resistance is increased, for example, the effective voltage applied to the liquid crystal at the position of the K point is lowered, causing a problem of image quality deterioration. In contrast, when the conductive layer 512 is formed around the conductive color resist 506 as shown in FIG. 7, the parasitic resistance between the drain region 509 and the point K can be reduced, and the image quality as described above can be obtained. The problem of degradation can be prevented.

  Further, when the structure as shown in FIG. 7 is adopted, the conductive layer 512 provided in the peripheral portion can also be used as a part of the black matrix. This is because the conductive color resist 506 serves as a color filter, and the black matrix is formed around the color filter. In this case, the gate line 503, the source line 504, the black matrix provided on the thin film transistor side substrate, or the black matrix provided on the counter electrode is another part of the black matrix. Further, according to the structure in which the peripheral conductive layer 512 is part of the black matrix as shown in FIG. 7, the conductive layer 512 and the conductive color resist 506 are accurately aligned by an optical device or the like. It is possible to dispose the black matrix with high accuracy with respect to the resist 506.

4). Fourth Embodiment The fourth embodiment shows an example in which a black matrix is built in the thin film transistor side substrate in the third embodiment, and the steps are shown in FIGS. A cross-sectional view is shown. Unlike the third embodiment, in the fourth embodiment, in FIG. 8C, the black matrix 810 is selectively formed with respect to the color resists 806 to 808 using the LPD method. Since the method of forming the black matrix 810 by the LPD method and the effect of using this method are as described in the second embodiment, the description thereof is omitted. 8A to 8D illustrate an example in which the conductive layer 812 is formed using the same material as the source line; however, the conductive layer may be formed using a material different from the source line.

5. Fifth Embodiment The fifth embodiment is an embodiment relating to a reflective active matrix liquid crystal display device in which a conductive colored layer is formed on a non-translucent (light reflective) pixel electrode. A process sectional view is shown in A) to (C). First, after a thin film transistor 902 and an insulating film 905 are formed in FIG. 9A, a source line 904 and a pixel electrode 912 are formed by patterning a light-transmitting conductive layer such as a metal. The pixel electrode 912 is in contact with the drain region 909. In addition, the material of the conductive layer is preferably as high as possible in reflectivity. Next, as shown in FIG. 9B, red, green, and blue color filters 906, 907, and 908, which are conductive colored layers, are formed on the pixel electrode by patterning using a light exposure technique or the like. The subsequent steps are the same as in the first embodiment.

  In the conventional reflection type liquid crystal display device, the color filter is formed on the counter substrate side. However, in the reflection type liquid crystal display device, since only the reflected light becomes a light source, it is desired to further increase the aperture ratio. In this embodiment, the aperture ratio can be improved by incorporating the color filter in the thin film transistor side substrate 901. Further, by making the color filter conductive, it is possible to prevent a voltage division problem caused by the color filter being interposed between the pixel electrode and the liquid crystal element.

  The conductive colored layer of the present embodiment may be formed by dispersing a pigment such as a pigment and a conductive material such as ITO in a resist. For example, gelatin in which a conductive material is dispersed is also used. It can also be formed by dyeing a dyeing medium such as, or by mixing a conductive substance into printing ink or the like.

  In FIGS. 9A to 9C, the source line 904 and the pixel electrode 912 are formed of the same material, which simplifies the process and reduces costs. However, it is naturally possible to form the source line and the pixel electrode from different materials.

  In addition, it is desirable that the liquid crystal element 919 enclosed in this embodiment is a polymer dispersed liquid crystal (PDLC). Unlike the TN liquid crystal, the PDLC has an advantage that the transmission of light can be controlled by the scattering intensity and a polarizing plate is unnecessary. By eliminating the need for a polarizing plate, the aperture ratio can be improved and the manufacturing cost of the apparatus can be reduced. PDLC can be realized by dispersing liquid crystal molecules on the order of μm in a polymer or including liquid crystal in a network polymer.

When the conductive colored layer is a color resist, the ratio of solid components such as a dye and a conductive material to be included in the color resist is preferably 30% or less as in the first embodiment. The specific resistance of the conductive colored layer is preferably 1 × 10 ⁷ Ω · cm or less, and more preferably 1 × 10 ⁶ Ω · cm or less. Further, when the conductive fine particles are dispersed, the shape is preferably a dish shape, a rod shape, or the like, and the surface of the conductive fine particles is preferably subjected to a hydrophobic treatment with a coupling agent or the like.

6). Sixth Example The sixth example is an example in which a color resist is formed on a pixel electrode, and patterning of the pixel electrode is performed using this color resist as a mask. FIGS. A sectional view of the process is shown. First, after forming the thin film transistor 1002 and the insulating film 1005 in FIG. 10A, as shown in FIG. 10B, a contact hole is opened, and an ITO 1014 serving as a pixel electrode material is formed over the entire surface. At this time, a protective film for the source line 1004 may be formed if necessary. Next, as shown in FIG. 10C, patterns of a red color resist 1006, a green color resist 1007, and a blue color resist 1008 are sequentially formed. As such a color resist, for example, a pigment dispersion type resist formed by dispersing a pigment in the resist can be used. Thereafter, as shown in FIG. 10D, the ITO 1014 is etched using the formed color resists 1006 to 1008 as a mask to form pixel electrodes 1012. The subsequent steps are the same as in the first embodiment. Thereby, the pixel electrode and the color filter can be formed on the thin film transistor side substrate.

  According to the present embodiment, the pixel electrodes made of ITO are arranged below the color resists 1006 to 1008. For example, even if the color resists 1006 to 1008 have high resistance, the thickness in the color resist is small, so that the resistance in the vertical direction is small. For this reason, the reduction of the effective voltage applied to the liquid crystal due to the high resistance is effectively prevented. In this embodiment, the etching of the pixel electrode is performed using the color resists 1006 to 1008 as a mask, so that the step of forming a resist for patterning the pixel electrode can be omitted. As a result, the number of steps can be reduced and the yield can be improved.

  In this case, it is desirable that the color resists 1006 to 1008 to be color filters have conductivity. If the color resist to be a color filter is made conductive, the problem of voltage division caused by the color resist being interposed between the pixel electrode and the liquid crystal element is prevented, and electrons are trapped in the color resist and an afterimage, etc. It is because the situation where this occurs is also prevented.

As in the first embodiment, the ratio of the solid components such as the pigment and the conductive material to be included in the color resist is desirably 30% or less, and the specific resistance of the conductive color resist is 1 × 10 ⁷ Ω. It is preferably cm or less and more preferably 1 × 10 ⁶ Ω · cm or less. Further, when the conductive fine particles are dispersed, the shape is preferably a dish shape, a rod shape, or the like, and the surface of the conductive fine particles is preferably subjected to a hydrophobic treatment with a coupling agent or the like.

  Further, if the pixel electrode 1012 is formed of a non-light-transmitting conductive layer such as metal, a reflective active matrix liquid crystal display device can be configured as in the fifth embodiment.

7). Seventh Example The seventh example shows an example in which a black matrix is incorporated in the thin film transistor side substrate in the sixth example, and FIGS. 11A to 11E show the steps. A cross-sectional view is shown. Unlike the sixth embodiment, the seventh embodiment selectively forms a black matrix 1110 with respect to the color resists 1106 to 1108 using the LPD method in FIG. 11D. Since the method of forming the black matrix 1110 by the LPD method and the effect of using this method are as already described in the second embodiment, the description thereof is omitted.

8). Eighth Example The eighth example is an example in which an insulating film serving as a protective film is formed by using the LPD method using a resist for patterning a pixel electrode, and FIGS. E) shows a sectional view of the process. First, after forming the thin film transistor 1202 and the insulating film 1205 in FIG. 12A, as shown in FIG. 12B, a contact hole is opened, and an ITO 1214 serving as a material for the pixel electrode is formed over the entire surface. At this time, a protective film for the source line 1204 may be formed if necessary. Next, as shown in FIG. 12C, a resist pattern 1206 for pixel electrode patterning is formed. Thereafter, as shown in FIG. 12D, the ITO 1214 is etched using the formed color resist 1206 as a mask to form a pixel electrode 1212. Next, an insulating film 1220 is selectively formed by the LPD method using the resist pattern 1206 over the pixel electrode 1212 as a mask. This insulating film 1220 serves as a protective film for the source line 1204. The method of forming the insulating film 1220 by the LPD method and the effect of using this method are almost the same as those described in the second embodiment, except that the insulating film 1220 does not need to contain a dye.

  In the conventional example, when an insulating film serving as a protective film for the source line is formed, a step of removing the insulating film on the pixel electrode is necessary in order to prevent a decrease in effective voltage applied to the liquid crystal. On the other hand, the LPD method has a feature that the insulating film 1220 can be selectively formed in a region without the resist pattern 1206. In this embodiment, the insulating film 1220 is formed using the feature of the LPD method. Accordingly, a process of removing the insulating film above the pixel electrode is not necessary, and thus the number of processes can be reduced and the yield can be improved. In addition, since the insulating film can be formed at a low temperature of about room temperature by using the LPD method, an inexpensive glass substrate can be employed as the substrate. Further, by using the LPD method, an insulating film can be formed using a silicon oxide film generally used in the manufacture of thin film transistors. Therefore, there are advantages such as easy selection of chemicals used in the manufacturing process. In addition, even when the insulating film 1220 and another insulating film constituting the thin film transistor have a multilayer structure, since these are formed of the same material, there is an advantage that an adverse effect of distortion caused by stress or the like can be reduced. Further, in this embodiment, by using the LPD method, the insulating film 1220 is formed in a self-aligned manner with respect to the resist pattern 1206, so that the aperture ratio can be improved.

  In addition, this invention is not limited to the said Example, A various deformation | transformation implementation is possible within the range of the summary of this invention.

  For example, the conductive colored layer only needs to have at least a conductive function and a colored layer function, and is not limited to those described in the first embodiment.

  Further, for example, the LPD method used in the present invention is not limited to the one described in the above embodiment, and at least a saturated aqueous solution of a compound containing at least one substance constituting the insulating substance is brought into a supersaturated state to precipitate the insulating substance. Any film forming method may be used.

  The manufacturing method of the active matrix type liquid crystal display device and the like of the present invention is not limited to the manufacturing method described in the above embodiments.

  In addition, the structure of the thin film transistor is not limited to that described in the above embodiment, and an inverted stagnation type and a normal stagnation type structure in an amorphous (amorphous) silicon thin film transistor, and a planar type and a positive stagnation type in a poly (polycrystalline) silicon thin film transistor. Various structures such as the above can be adopted.

  According to the present invention, since it is not necessary to form a color filter on the counter substrate, the manufacturing cost of the counter substrate can be reduced and the margin of accuracy of bonding between the thin film transistor side substrate and the counter substrate can be greatly eased. In addition, since the pixel electrode material forming step and the patterning step thereof can be omitted, the cost can be reduced and the yield can be improved. In addition, it is possible to prevent a problem of image quality deterioration due to a decrease in effective voltage applied to the liquid crystal and to increase an aperture ratio.

  In addition, according to the present invention, an insulating film serving as a black matrix can be formed at a low temperature, so that an inexpensive glass substrate can be used, and the product cost can be reduced, and the device characteristics of the thin film transistor can be prevented from being deteriorated by the heating temperature. it can. Moreover, the etching process of the insulating film can be omitted, and the cost of the product can be reduced. In addition, the black matrix can be formed with high accuracy and the aperture ratio can be improved. Further, since problems such as glare and cracks can be solved, display characteristics and reliability can be improved.

  In addition, according to the present invention, it is possible to realize a reflective liquid crystal display device that is simple in process and low in cost and excellent in display characteristics such as an aperture ratio.

  In addition, according to the present invention, it is possible to effectively prevent the reduction of the effective voltage applied to the liquid crystal, so that the display characteristics can be improved. Further, since the patterning of the pixel electrode is performed using a color resist as a mask, the number of steps can be reduced, the yield can be improved, and the manufacturing cost can be reduced.

  According to the present invention, the step of removing the insulating film above the pixel electrode can be omitted, and the yield can be improved. In addition, it is possible to use an inexpensive glass substrate and prevent deterioration of device characteristics of the thin film transistor.

It is a figure which shows an example of the structure of the conventional active matrix type liquid crystal display device. 2A to 2C are process cross-sectional views of the first embodiment in which a conductive colored layer is also used as a pixel electrode. 3A to 3D are process sectional views of the second embodiment in which the black matrix is built in the thin film transistor side substrate in the first embodiment. 4A to 4D are process sectional views of a third embodiment in which a conductive layer is interposed between the conductive colored layer and the drain region. 5A to 5C are process cross-sectional views in the case where the conductive layer is formed of the same material as the source line in the third embodiment. It is a top view which shows the structure of a 3rd Example. It is a top view which shows the structure of the 3rd Example at the time of forming a conductive layer in the peripheral part of a conductive colored layer. 8A to 8D are process cross-sectional views of the fourth embodiment in which the black matrix is built in the thin film transistor side substrate in the third embodiment. FIGS. 9A to 9C are process cross-sectional views of a fifth embodiment in which a conductive colored layer is formed on a non-transparent pixel electrode to constitute a reflective liquid crystal display device. 10A to 10E are process sectional views of a sixth embodiment in which a color resist is formed on a pixel electrode and patterning of the pixel electrode is performed using this color resist. 11A to 11E are process sectional views of a seventh embodiment in which a black matrix is built in a thin film transistor side substrate in the sixth embodiment. 12A to 12E are process sectional views of an eighth embodiment in which an insulating film is formed by the LPD method using a pixel electrode patterning resist. It is a figure which shows the relationship between solid component ratio and a pot life. 14A to 14C are diagrams showing the relationship between the specific resistance and the difference between the effective values. FIGS. 15A and 15B are diagrams showing the relationship between the specific resistance and the difference between the effective values.

Explanation of symbols

201, 301, 401, 501, 801, 901, 1001, 1101, 1201 ... Thin film transistor side substrate 202, 302, 402, 502, 802, 902, 1002, 1102, 1202 ... Thin film transistors 206-208, 306-308, 406 ... 408, 506 to 508, 806 to 808, 1006 to 1008, 1106 to 1108 ... Color resist 906 to 908 ... Conductive colored layer 1206 ... Resist pattern 209, 309, 409, 509, 809, 909, 1009, 1109, 1209 ... Drain regions 310, 810, 1110 ... black matrix 411, 512, 812 ... conductive layers 1014, 1114, 1214 ... ITO
912, 1012, 1112, 1212 ... Pixel electrodes 217, 317, 417, 517, 817, 917, 1017, 1117 ... Counter substrate 218, 318, 418, 518, 818, 918, 1018, 1118 ... Counter electrodes 219, 319, 419, 519, 819, 919, 1019, 1119 ... Liquid crystal 220, 420, 520, 920, 1020, 1120, 1220 ... Insulating films 221, 321, 421, 521, 821, 921, 1021, 1121 ... Alignment films 222, 322 422, 522, 822, 922, 1022, 1122,... Orientation film

Claims (9)

A method for manufacturing a liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate,
Forming an inorganic pixel electrode material as a material of a pixel electrode selectively driven by the thin film transistor on the thin film transistor side substrate;
Forming a plurality of colored layers made of a water-repellent color resist on the pixel electrode material;
Patterning the pixel electrode material using the plurality of colored layers as a mask to form a plurality of pixel electrodes;
The LPD method is used to immerse the thin film transistor side substrate in a liquid material in which a pigment that is a light shielding material is dissolved, and the light shielding property in which the pigment is added between the plurality of pixel electrodes except on the colored layer And selectively forming an insulating film of
The liquid material is obtained by adding the dye as the light-shielding substance to a saturated aqueous solution of hydrofluoric acid in which an inorganic compound is dissolved, and the colored layer has liquid repellency with respect to the liquid material. A method for manufacturing a liquid crystal display device. In claim 1,
The method for manufacturing a liquid crystal display device, wherein the colored layer contains a conductive substance. In claim 2,
The colored layer includes a conductive material,
A method for manufacturing a liquid crystal display device, wherein a ratio of a solid component containing the coloring matter and the conductive substance in the colored layer in the color resist is 30% or less. In any one of Claims 1 thru | or 3,
The method for manufacturing a liquid crystal display device, wherein the colored layer includes a resist in which a pigment is dispersed. In any one of Claims 1 thru | or 3,
The method for manufacturing a liquid crystal display device, wherein the colored layer includes a dyed polymer material. In any one of Claims 1 thru | or 3,
The method for manufacturing a liquid crystal display device, wherein the colored layer is made of ink. In any one of Claims 1 thru | or 6.
The method of manufacturing a liquid crystal display device, wherein the pixel electrode includes a non-translucent material. In any one of Claims 1 thru | or 7,
The manufacturing method of the liquid crystal display device characterized by the said inorganic compound containing a silica. In any one of Claims 1 thru | or 8.
The method of manufacturing a liquid crystal display device, wherein the step of forming the light-shielding insulating film includes a step of adding an additive to the liquid material in which the substrate is immersed.

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