JP3909786B2 - Electrolytic plating apparatus and contact thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
TECHNICAL FIELD The present invention relates to an electrolytic plating apparatus for plating a conductor layer on the surface of a plating object and a contact thereof, and more particularly, to an electrolytic plating apparatus that can also be used for forming a fine pattern such as a metal wiring layer of a semiconductor substrate and Regarding the contact.
[0002]
[Background technology]
In recent years, with the miniaturization of LSIs and the like (semiconductor devices), it has become difficult to withstand electromigration with aluminum pattern wiring. Therefore, when forming a conductor layer for wiring, an aluminum-based metal is used as a conductive material. The use of copper and other materials is becoming more serious. Unlike aluminum, which can be embedded in contact holes by heating and flowing after film formation by sputtering or the like, when copper that is difficult to be embedded by heating is used for pattern wiring, copper damascene wiring A technique is used. In this method, a wet plating process is also employed in order to accelerate the copper deposition growth.
[0003]
In this copper damascene wiring process, when forming a copper wiring layer on the surface of the semiconductor substrate, a groove such as wiring was formed in a pattern under the copper wiring layer, and a copper film was formed thereon. After that, the portion protruding from the groove is polished and removed, so that the metal is embedded in the groove. More specifically, referring to FIG. 5, a large number of ICs (semiconductor devices) are usually formed on the upper surface, ie, one main surface, of a thin silicon wafer 10 (plating object) having a diameter of about 300 mm and a thickness of 1 mm or less. (See FIG. 5 (a)). When a vertical cross section of a part thereof is viewed (see FIG. 5 (b)), in the state immediately before the formation of the copper layer for wiring, for example, the surface of the substrate 11 is used. In the silicon oxide film 12 formed above, the contact hole 13 to the PN junction and other active elements formed in the surface layer of the substrate 11 and the wiring pattern region connected thereto are removed by a photolithography process or the like. Yes. The contact hole 13 is removed up to the surface of the substrate 11 or other contact surface, and the wiring region around the contact hole 13 is removed so that the oxide film 12 remains at the bottom of the groove.
[0004]
When a copper layer is formed on the silicon wafer 10, a barrier metal 14 is firstly very thinly deposited on the upper surface by sputtering or the like (see FIG. 5C), and then extremely thin by CVD or sputtering. After attaching the copper seed metal 15 (see FIG. 5D), a copper film 16 is grown on the seed metal 15 by wet plating (see FIG. 5E). Further, in order to prevent the surface oxidation of the copper film 16, a passivation film 17 is also attached by sputtering or the like, if necessary (see FIG. 5 (f)).
Thus, after the copper film 16 is formed on the main surface of the silicon wafer 10, the main surface is subjected to CMP (chemical mechanical polishing) to remove the copper layer 15 other than the wiring region (FIG. 5). (See (g)).
[0005]
[Prior art]
An electrolytic plating apparatus that can be used in such a wet plating process includes a power supply that supplies current required for electrolytic plating in order to efficiently grow the copper film 16 thereon by energizing the seed metal 15 as a cathode. And a contact made of a current-carrying member, and the plating object is energized from the power supply via the contact.
[0006]
As a specific example, when a plating unit 20 is processed in a single sheet processing mode (see FIG. 6A), this apparatus stores a predetermined amount of a plating solution 23 (plating solution) such as a copper sulfate dilution solution. From a holding chamber 21 (plating liquid bath) that can be held, a plus electrode 22 that is also installed in the plating chamber 21 and also serves as a guide for circulating the plating liquid 23 toward the silicon wafer 10 to be plated, a handling robot, etc. A holder 24 that holds the received silicon wafer 10 in the plating solution 23, a movable arm 25 attached to the holder 24, and a base end portion supported by the arm 25. Contact pin 26 (contact) that is brought into contact with the edge of the main surface of wafer 10, and the negative electrode is connected to contact pin 26 and the positive electrode is positive And comprises a constant current source 27 connected to 22.
[0007]
In this case, the silicon wafer 10 is immersed in the plating solution 23 with its main surface, that is, the surface to be plated down, and is exposed to the plating solution 23 that blows up through the plus electrode 22. When a current required for electrolytic plating is supplied from the constant current source 27 and is supplied to the circuit that returns to the constant current source 27 through the positive electrode 22, the plating solution 23, the silicon wafer 10, and the contact pins 26, the silicon wafer is supplied. A copper film 16 grows on the seed metal 15 on the 10 surface.
[0008]
This example is a face-down type, but there is also a face-up type that holds the silicon wafer 10 upward (see FIG. 6B). Further, as a power supply, there is a type that uses a constant voltage source 28 in place of or in combination with the constant current source 27 (see FIG. 6B).
[0009]
In addition, the automated plate-type plating apparatus 30 includes a loader 31 for carrying a large number of silicon wafers 10 in a cassette in order to continuously perform the above-described electrolytic plating process in accordance with appropriate computer control or the like, A chamber 32 including the above-described plating unit 20, a chamber 33 for cleaning, a drying chamber 34, an unloader 35 that holds a cassette for storing the processed silicon wafer 10, and the units 31 to 35. And a robot 36 for moving the silicon wafer 10 between them. The silicon wafers 10 are taken out one by one from the cassette on the loader 31 and plated in the chamber 32 to form the copper film 16, and in the chamber 33 and the chamber 34. Cleaning and drying are also performed, and the sheets are sequentially stored in a cassette on the unloader 35.
[0010]
In the electrolytic plating process, the tip surface (contact point) of the contact pin 26 is brought into contact with the main surface of the silicon wafer 10 (see FIG. 7A), and the main surface of the silicon wafer 10 is energized through the contact pin 26. However, since the contact pin 26 is made of a good conductor such as titanium platinum that can be energized and has acid resistance, when the copper film 16 is formed on the main surface of the silicon wafer 10, The copper film 26a also adheres to the side peripheral surface of the contact pin 26 and the like. The copper film 26a and the copper film 16 are initially connected, but when the contact pin 26 is detached from the silicon wafer 10, the copper film 26a and the copper film 16 are cut off in the vicinity of the contact (see FIG. 7D).
[0011]
[Problems to be solved by the invention]
In such a conventional electrolytic plating apparatus and its contact, when the plating object is plated, the contact is also plated, and tearing occurs as the contact is detached. When a piece is broken, burrs remain (see 16a and 26b in FIG. 7 (d)) and flakes scatter and become a contamination source. Further, the copper film attached to the periphery of the contact becomes thicker every time energization is performed, and eventually peels off and becomes a contamination source, or the elastic deformability of the contact is impaired. However, even if plating on a semiconductor substrate is used, if a bump having a width of several tens of μm is formed, passive measures such as filtering to remove unwanted particles in the plating solution can be used.
[0012]
However, the plating layer finally finished to a submicron fine pattern is not in time, and it is required to actively cut the plating adhesion to the contacts that cause the plating layer to be broken or peeled off.
For this purpose, by enclosing at least the plating solution infiltrating portion of the exposed surface of the contact made of the energizing member with an insulating member or the like, the direct energization between the contact and the plating solution is cut off, and the plating on the contact itself is performed. It is also possible to prevent this.
[0013]
However, the contactor is responsible for energizing the plating object, and therefore the contact part of the contactor must be exposed, so it is not possible to simply cover all the energizing members with insulating members. . In addition, it is inevitable that the contact portion is immersed in the plating solution together with the plating object. For this reason, further ingenuity is required to cut off the adhesion of the plating to the contacts including the contacts.
Therefore, it is a technology to insulate the contacts and to devise contacts that have a structure that is compatible with the insulating structure as much as possible. It becomes a general problem.
The present invention has been made to solve such a problem, and an object thereof is to realize an electrolytic plating apparatus in which no plating is applied to the contact and the contact.
[0014]
[Means for Solving the Problems]
About the 1st thru | or 4th solution means invented in order to solve such a subject, the structure and effect are demonstrated below.
[0015]
[First Solution]
The electrolytic plating apparatus of the first solution means (as described in claim 1 at the time of filing) supplies a current required for electrolytic plating (and a plating liquid holding means such as a plating liquid tank capable of holding a plating liquid). And supplying one or more contacts to the plating object from the power supply via the contact (when plating the plating object attached to the plating solution). In the electrolytic plating apparatus, a means that is installed or added to the contact and insulates the surroundings of the current-carrying member (the current-carrying member in a state where the contact part is exposed) and a contact part of the contactor. Means for supplying an active fluid.
[0016]
In the present specification, the “inert fluid” means a gas such as nitrogen gas or a fluid liquid, which is difficult to be electrolyzed and has a practical composition as long as it is slight even when mixed in the plating solution. It means something that has no effect.
[0017]
In the electrolytic plating apparatus of the first solution, the plating object is put on the plating solution, the contact of the contact is brought into contact with the plating solution, and the plating object is energized from the power supply via the contact. Thus, the plating is performed on the plating object. At that time, the portion of the contact member surrounded by the insulating member among the energizing members is insulated from the plating solution, so that no direct energization with the plating solution is made there and no plating adheres. Further, the contact portion of the energizing member in the contact is not surrounded by the fixed insulating member, but at least at the time of energization, the inert fluid is supplied to the contact portion. Since the presence of the plating solution is prevented by the presence, the plating does not adhere there.
[0018]
Note that, under the combined use of the insulating member and the inert fluid, most of the contacts are protected by the insulating member, and the inert fluid only needs to fill a small gap near the contact and need to continue to flow. Since there is no, it does not flow into the plating solution. For example, it is only a trace amount.
As a result, the plating solution does not come to the contact that cannot be insulated, so that the current-carrying member of the contactor is completely isolated from the plating solution, and the plating does not adhere to the contactor including the contact point.
Therefore, according to the present invention, it is possible to realize an electrolytic plating apparatus in which the contact is not plated.
[0019]
[Second Solution]
The contact of the electrolytic plating apparatus of the second solution means (as described in claim 2 at the beginning of the application) is a contact of the electrolytic plating apparatus provided with a current-carrying member with the contact portion of the current-carrying member exposed. An insulating member surrounding the energizing member is provided, and a communication path reaching the contact portion is formed.
[0020]
The contact of the electrolytic plating apparatus of the second solving means is used by being attached to an electrolytic plating apparatus provided with an inert fluid supply source. And an inert fluid supply source are connected to the communication path.
Thereby, an inert fluid will be supplied to the contact part exposed without being enclosed with an insulating member among the electricity supply members of a contactor.
Therefore, according to this invention, the contact of the electrolytic plating apparatus which does not attach a plating is realizable.
[0021]
[Third Solution]
The electrolytic plating apparatus of the third solution means (as described in claim 3 at the beginning of the application) supplies a current required for electrolytic plating (and a plating liquid holding means such as a plating liquid tank capable of holding the plating liquid). And supplying one or more contacts to the plating object from the power supply via the contact (when plating the plating object attached to the plating solution). In the electrolytic plating apparatus, means for insulating the surroundings of the current-carrying member (in the state where the contact part is exposed) provided in the contactor, or added thereto, and the contact part of the contactor or its And a means for applying a bias voltage around.
[0022]
In the electrolytic plating apparatus of the third solving means, the plating object is put on the plating solution, the contact of the contact is brought into contact with the plating solution, and the plating object is energized from the power supply via the contact. Thus, the plating is performed on the plating object. At that time, the portion of the contact member surrounded by the insulating member among the energizing members is insulated from the plating solution, so that no direct energization with the plating solution is made there and no plating adheres. In addition, the contact portion of the current-carrying member in the contact is not surrounded by a fixed insulating member, but a bias voltage is applied around it, so that it repels the electrostatic field and generates ions. Intrusion is prevented. In particular, by biasing to the same polarity as the anode, metal ions repel strongly, so that a plating solution having an active ingredient cannot enter. Therefore, the plating does not adhere to the contact portion.
[0023]
Under the combined use of the insulating member and bias voltage application, most of the contacts are protected by the insulating member, so that the reverse bias near the plating object that becomes the cathode is applied to a small local space near the contact. And it is sufficient that it does not interfere with the plating adhesion to the plating object.
As a result, the plating solution does not come to the contact that cannot be insulated, so that the current-carrying member of the contactor is completely isolated from the plating solution, and the plating does not adhere to the contactor including the contact point.
Therefore, according to the present invention, it is possible to realize an electrolytic plating apparatus in which the contact is not plated.
[0024]
[Fourth Solution]
The contact of the electroplating apparatus of the fourth solution means (as described in claim 4 at the beginning of the application) is provided with the energizing member and the contact portion of the energizing member exposed so as to surround the energizing member. An insulating member and a conductive member that is inserted into the insulating member and reaches the vicinity of the contact portion are provided.
[0025]
The contact of the electrolytic plating apparatus of the fourth solving means is used by being attached to an electrolytic plating apparatus provided with a reverse bias voltage generation source. In addition, the reverse bias voltage source is connected to the conductive member.
Thereby, a reverse bias voltage is applied to the contact portion exposed around the energizing member of the contactor without being surrounded by the insulating member or around the contact portion.
Therefore, according to this invention, the contact of the electrolytic plating apparatus which does not attach a plating is realizable.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
About the electrolytic plating apparatus of this invention achieved by such a solution means and its contactor, the form for implementing this is demonstrated by the following 1st-4th Example. The first embodiment shown in FIG. 1 embodies the first and second solving means described above, and the second embodiment of FIG. 2 also uses the first and second solving means. The third embodiment shown in FIG. 3 embodies the above-described third solving means and the fourth solving means, and the fourth embodiment of FIG. 4 is also the third solution. Means and fourth solving means are embodied.
In these drawings and the like, the same constituent elements as those in the conventional art are denoted by the same reference numerals, and therefore, repeated description thereof will be omitted. Hereinafter, differences from the conventional art will be mainly described.
[0027]
[First embodiment]
The specific configuration of the electrolytic plating apparatus and the contact thereof according to the first embodiment of the present invention will be described with reference to the drawings. 1A is an enlarged view of a contact portion of a contact pin main body, FIG. 1B is an enlarged longitudinal sectional view of a tip portion of a contact, and FIG. 1C is a simplified view showing a main part of the apparatus. FIG.
[0028]
This contactor 40 includes any needle-shaped contact pin 41 (current-carrying member) having a diameter of 1 mm and made of the same good conductor as that of the conventional contact pin 26 that has a current-carrying function (see FIG. 1A). ), A lumen 42 penetrating the shaft core portion is formed in the same manner as the injection needle, and radial slits 43 are also formed on the distal end surface serving as a contact point. Thereby, as for the contact 40, the communicating path which extends to a contact part is formed in the electricity supply member.
[0029]
The contact pin 41 (see FIG. 1B) is inserted into an outer cylinder 44 whose outer diameter and inner diameter substantially coincide. The outer cylinder 44 (insulating member) is made of an engineering plastic that is excellent in insulation and acid resistance, such as polyphenylene sulfide, and covers the side peripheral surface of the contact pin 41 with a little remaining at the tip. Further, a seal 45 that is slightly protruded from the tip of the contact pin 41 is attached to the side peripheral surface of the tip of the contact pin 41 protruding from the outer cylinder 44. The seal 45 is made of an elastomer that easily elastically deforms in addition to insulation and acid resistance, such as fluorine rubber or polyethylene. The seal 45 is fixed to the contact pin 41 with an adhesive or the like so as not to drop off. As a result, the contact 40 is configured such that the contact portion of the energizing member is exposed and the periphery of the energizing member is surrounded by the insulating member, and a means for sealing the periphery of the distal end portion is added.
[0030]
Such contacts 40 are mounted on the electrolytic plating apparatus, but in most cases, several contacts 40 are provided along the edge of the silicon wafer 10 (see FIG. 1C). In either case, the constant current source 27 is connected to the contact pin 41 so as to be energized, and the gas unit 46 is connected to the lumen 42 of the contact pin 41 so as to be able to communicate therewith. As the gas unit 46 (see FIG. 1C), a unit capable of supplying nitrogen gas (inert fluid) having a pressure slightly higher than the atmospheric pressure only when necessary according to remote switching of a valve or the like is used. . Thus, the electrolytic plating apparatus equipped with the contact 40 and the gas unit 46 includes means for insulating the current-carrying member of the contact and means for supplying an inert fluid to the contact portion of the contact. It has become.
[0031]
About the electrolytic plating apparatus of this 1st Example and its contactor, the use aspect and operation | movement are demonstrated. FIGS. 1C and 1D are diagrams showing the operation status.
[0032]
When the silicon wafer 10 on which the seed metal 15 is formed is loaded and chucked, the tip of the contact 40 is pressed against the main surface, and the gas unit 46 starts a feeding operation. If it does so, the front end surface of the contact pin 41 will contact | abut to the main surface of the silicon wafer 10, and the seal | sticker 45 compressed vertically at that time will seal a contact periphery, expanding horizontally. Then, nitrogen gas is fed through the lumen 42 and the slit 43 of the contact pin 41 to fill it. Since the pressure difference between the inside and outside of the seal 45 is not large, the filled gas does not leak.
[0033]
Then, the silicon wafer 10 is immersed in the plating solution 23 together with the contact 40, and further energization is performed by the constant current source 27 (see FIG. 1C). When energized, copper deposits where the current flows as the cathode, so the copper film 16 is plated on the main surface of the silicon wafer 10 exposed to the plating solution 23. Since the plating solution 23 does not come to the portion of the main surface surrounded by the seal 45, copper does not adhere to that portion of the silicon wafer 10 and the contact pins 41 facing each other. Of course, there is no adhesion of copper to the seal 45 or the outer cylinder 44.
[0034]
Then, after a predetermined time has elapsed (see FIG. 1D), when a sufficient copper film 16 has grown on the seed metal 15, the energization is stopped and the silicon wafer 10 and the like are taken out of the plating solution 23. Further, the gas supply is stopped and the contact 40 is detached from the silicon wafer 10. Then, the contact 40 to which copper is not attached is separated from the silicon wafer 10 without tearing the copper film 16 at all.
Thus, the burrs (16a) of the copper film 16 are not generated, and the burrs (26b) and flakes of the copper film (26a) adhering to the contact 40 are not generated. A plating process can be performed.
[0035]
[Second embodiment]
A specific configuration of the electrolytic plating apparatus and the contact thereof according to the second embodiment of the present invention will be described with reference to the drawings. 2A to 2C are detailed views of the contactor, and FIG. 2D is a simplified diagram showing the main part of the apparatus.
This contactor 50 is different from the above-described contactor 40 in that the communication path is secured by a dedicated member other than the energizing member for easy processing of the energizing member and for easy handling and the like. A plurality of energizing members and the like are integrated together.
[0036]
The contact pin 51 as a current-carrying member (see FIG. 2A) is not a complicated shape like the contact pin 41 described above, but rather a simple shape like the conventional contact pin 26. On the other hand, the thin tube 52 is made of a material that can be easily processed because it does not need electrical conductivity, and has a lumen 53 and a slit 54 formed in the same shape as the contact pin 41.
[0037]
In addition, the outer sleeve 55 in which the 51 and 52 are alternately arranged in a line in a predetermined mold, and poured into a molten state and solidified therein holds the contact pin 51 and the like while maintaining a certain degree of elasticity. . In addition, a recess 56 is formed at the tip thereof, and the tips of the contact pin 51 and the thin tube 52 protrude slightly from the bottom of the recess 56 (see FIGS. 2B and 2C).
[0038]
Then, such a contact 50 is attached to the electrolytic plating apparatus (see FIG. 2D), and the constant current source 27 is connected to each contact pin 51 so as to be energized, and to the lumen 53 of the narrow tube 52. Thus, the gas unit 46 is connected to be communicable.
[0039]
Even in the case of such an electrolytic plating apparatus and its contact, even if the function sharing and the mechanism are integrated, they are used in substantially the same manner as in the first embodiment described above, and the edge on the front end surface of the outer sleeve 55 is used. The same sealing as the seal 45 is performed by the portion, and the contact portion of the contact pin 51 is also filled with nitrogen through the thin tube 52.
Thus, also in this case, the silicon wafer 10 can be plated without being plated by the contact 50.
[0040]
[Third embodiment]
A specific configuration of the electrolytic plating apparatus and the contact thereof according to the third embodiment of the present invention will be described with reference to the drawings. 3A is an enlarged cross-sectional view of the tip of the contact, FIG. 3B is an enlarged vertical cross-sectional view, and FIG. 3C is a simplified view showing the main part of the apparatus.
[0041]
This contactor 60 (see FIGS. 3A and 3B) is a simple needle-shaped / bar-shaped contact pin 61 (electrically conductive member) that is used as an outer cylinder 62 (insulating member) made of the same material as the outer cylinder 44. It is inserted and the tip is protruded very slightly. However, a metal foil 63 (conductive member) is embedded in the outer cylinder 62. The metal foil 63 makes a round at least at the tip of the outer cylinder 62. As a result, the contact 60 is provided with an insulating member surrounding the energizing member provided to expose the contact portion of the energizing member, and a conductive member reaching the vicinity of the contact portion inserted into the insulating member. It has become.
[0042]
The electrolytic plating apparatus to which this contactor 60 is attached (see FIG. 3C) is one to which a voltage source 64 is added. The voltage source 64 may be the same as the constant voltage source 28 described above, but is provided separately from the constant voltage source 28 and the constant current source 27 and operates independently. A voltage source 64 is connected to the metal foil 63 of the contactor 60 so that a voltage can be applied. As a result, the electrolytic plating apparatus equipped with the contact 60 and the voltage source 64 includes means for insulating the current-carrying member of the contact and means for applying a bias voltage to or around the contact portion of the contact. It has become.
[0043]
Such an electrolytic plating apparatus and its contact are used in substantially the same manner as in the first embodiment described above except that they are operated at the same timing as the voltage source 64 instead of the gas unit 46. A bias voltage is applied to the metal foil 63 while the silicon wafer 10 and the contact 60 in contact therewith are immersed in the plating solution 23, and a very close proximity of the contact 60 is opposite to the silicon wafer 10. Therefore, copper ions are kept away from the periphery of the contactor 60, particularly from the contact point.
Thus, also in this case, the silicon wafer 10 can be plated without being plated by the contactor 60.
[0044]
[Fourth embodiment]
A specific configuration of the electrolytic plating apparatus and the contact thereof according to the fourth embodiment of the present invention will be described with reference to the drawings. 4A is a plan view of the tip of the contact, FIG. 4B is a longitudinal sectional view, FIG. 4C is a bottom view, and FIG. 4D is a simplified diagram showing the main part of the apparatus.
This contactor 70 is different from the contactor 60 described above in that the conductive member 73 is linear for easy embedding, and a plurality of energizing members 71 and the like are provided for ease of handling. It is a point that is integrated together.
[0045]
A plurality of contact pins 71 (electric conducting members) (five in FIG. 4A to FIG. 4C) are arranged side by side and embedded in the outer jacket 72 (insulating member). A copper wire 73 (conductive member) is also embedded in the outer jacket 72 through the vicinity of the tip of the contact pin 71 but not in contact therewith. The contact pin 71 is bent substantially at a right angle in consideration of the case where it is desired to mount the contact 70 sideways due to the mounting space or the like, so that only the tip portion is vertical and most of the other are horizontal. The tip of the contact pin 71 protrudes only slightly from the outer sleeve 72 at the tip of the step 72a and is exposed to function as a contact. Note that the outer jacket 72 is backed by a back plate 75 with an elastic sheet 74 interposed in order to ensure a contact pressure with the silicon wafer 10 even in the horizontal position.
[0046]
Even in the case of such an electrolytic plating apparatus and its contact, even if the mechanism is integrated, it is used in substantially the same manner as in the above-described third embodiment, and is in contact with the silicon wafer 10 and this. While the contact 70 is immersed in the plating solution 23, a bias voltage is applied to the copper wire 73 from the voltage source 64 and the tip of the contact 70 is reverse-biased with respect to the silicon wafer 10. Copper ions are kept away from the surroundings, especially around the contact points.
Thus, also in this case, the silicon wafer 10 can be plated without being plated by the contact 70.
[0047]
[Modification]
In the above description, the case of plating copper has been described. However, the plating material is not limited to this, and the present invention can be applied as long as it is a material capable of electrolytic plating such as other metals.
Further, the plating object is not limited to a semiconductor on which copper damascene wiring is made, and the present invention can be applied to any object that can be subjected to electrolytic plating if the cost permits.
Furthermore, the energizing member is not limited to a needle shape, and may be a wire shape, a prismatic shape, a plate shape, or a tapered shape.
Further, the communication path can be formed other than in the energizing member or the dedicated member. If the member extends to the tip of the contactor, etc., it can be formed in the insulating member or between the energizing member and the insulating member. It may be formed.
[0048]
【The invention's effect】
As is clear from the above description, in the electrolytic plating apparatus of the present invention and its contacts, the plating solution is not attached to the contacts because the plating solution does not come to the contact points that cannot be insulated. There is an advantageous effect of disappearing.
[Brief description of the drawings]
FIGS. 1A and 1B are detailed views of a contactor according to a first embodiment of the electrolytic plating apparatus and contactor of the present invention, and FIGS. FIG.
FIGS. 2A to 2C are detailed views of the contact, and FIG. 2D is a simplified diagram showing the operation status of the apparatus, etc., for the second embodiment of the electrolytic plating apparatus and the contact of the present invention. It is.
FIGS. 3A and 3B are detailed views of a contactor according to a third embodiment of the electrolytic plating apparatus and contactor of the present invention, and FIG. It is.
FIGS. 4A to 4C are detailed views of a contact, and FIG. 4D is a simplified diagram showing the operation status of the apparatus, for a fourth embodiment of the electrolytic plating apparatus of the present invention and its contact. It is.
FIG. 5 is an example of a semiconductor manufacturing process for forming copper damascene wiring.
FIG. 6 is a conventional electrolytic plating apparatus.
FIG. 7 shows a contact of a conventional electrolytic plating apparatus and its usage.
[Explanation of symbols]
10 Silicon wafer (semiconductor device, semiconductor substrate, plating object)
11 Substrate (foundation)
12 Oxide film (insulating layer)
13 Contact hole (Etch mark, buried part)
14 Barrier metal (blocking layer)
15 Seed metal (seed layer)
16 Copper film (Plating layer)
16a Bali
17 Passivation film (antioxidation layer)
20 Plating unit (electrolytic plating equipment)
21 Plating chamber (plating solution holding means, plating solution holding means)
22 Positive electrode (anode)
23 Plating solution (Plating solution)
24 Holder (Chuck, plating object holder)
25 Arm (Contact support member)
26 Contact pin (energization member, contact)
26a Copper film (contamination source)
26b Bali (contamination source)
27 Constant current source (power supply)
28 Constant voltage source (power supply)
30 Plating equipment (applied equipment)
31 Loader (input unit)
32 chamber (plating unit, electrolytic plating equipment)
33, 34 chambers (other units for cleaning and drying)
35 Unloader (collection unit)
36 Robot (conveyance unit)
40 Contact (Contact for electrolytic plating equipment)
41 Contact pin (energizing member)
42 Lumen (Communication passage)
43 Slot (communication end)
44 Outer cylinder (insulating member)
45 Seal (Contact sealing member)
46 Gas unit (inert fluid source)
50 Contact (Contact for electrolytic plating equipment)
51 Contact pin (energizing member)
52 tubules (tubular bodies, communication path forming members)
53 Lumen (Communication passage)
54 Slot (communication end)
55 Jacket (Insulating material)
56 Recess (Contact sealing part)
60 Contact (Contact for electrolytic plating equipment)
61 Contact pin (energizing member)
62 Outer cylinder (insulating member)
63 Metal foil (conductive member for applying reverse bias voltage)
64 Voltage source (reverse bias voltage source)
70 Contact (Contact for electrolytic plating equipment)
71 Contact pin (energizing member)
72 Jacket (insulating member)
72a step
73 Copper wire (conductive member for applying bias voltage)
74 Elastic sheet (elastic layer, elastic deformation part)
75 Back plate (non-deformed part, support member)

Claims (3)

In an electrolytic plating apparatus comprising a power supply for supplying a current required for electrolytic plating and one or more contacts, and energizing the plating object from the power supply via the contacts,
The contact is an energization member having a contact portion at the tip;
An insulating member that insulates the periphery of the energizing member, excluding the contact portion;
A conductive member embedded without being exposed inside the insulating member in the vicinity of the contact portion ,
The electroplating apparatus further comprises a voltage source that applies a bias voltage opposite to the power supply to the conductive member.   2. The electrolytic plating apparatus according to claim 1, wherein the conductive member is a metal foil embedded in the insulating member so as to go around the current-carrying member.   The electrolytic plating apparatus according to claim 1, wherein the conductive member is a copper wire embedded in the insulating member.

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