JP3958695B2 - Method for manufacturing cold cathode display device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a method for manufacturing a cold cathode display device.To the lawIt is such an invention.
[0002]
[Prior art]
Conventionally, the following is disclosed as a manufacturing method of a cold cathode display device (for example, refer to Patent Document 1).
[0003]
In the conventional technique, a cathode electrode having a predetermined shape is disposed on a substrate, and an insulating layer, a lead electrode, and a sacrificial layer are laminated in that order so as to cover the substrate and the cathode electrode. Here, alumina or the like is employed as the sacrificial layer.
[0004]
Next, an opening is formed at a predetermined position of the insulating layer, the extraction electrode, and the sacrificial layer, and the cathode electrode is exposed from the opening.
[0005]
Next, a diamond film is formed on the cathode electrode and the sacrificial layer under a predetermined formation condition using a hot filament CVD (Chemical Vapor Deposition) method.
[0006]
Finally, by removing the sacrificial layer by etching, the diamond film formed on the sacrificial layer is lifted off and removed.
[0007]
In the above steps, the growth start speed of the diamond film on the sacrificial layer is slowed down, so that a discontinuous diamond film is formed on the sacrificial layer (note that the diamond film on the cathode electrode has a continuous shape). It is formed.). Therefore, since the solution for etching the sacrificial layer is likely to enter between the discontinuous diamond films, the discontinuous diamond film can be lifted off easily and reliably. Can be formed on the cathode electrode.
[0008]
[Patent Document 1]
JP 2000-353467 A (FIG. 1)
[0009]
[Problems to be solved by the invention]
However, the conventional technique has a problem that a diamond film is formed on the side surface of the opening, and the cathode electrode and the extraction electrode are short-circuited in the finished product.
[0010]
Accordingly, an object of the present invention is to provide a method for manufacturing a cold cathode display device, which can prevent a short circuit occurring between the cathode electrode and the extraction electrode.
[0011]
[Means for Solving the Problems]
  In order to achieve the above object, a method of manufacturing a cold cathode display device according to claim 1 according to the present invention includes (a) a step of preparing a substrate having a cathode electrode, and (b) reaching the cathode electrode. A step of forming an insulating layer and an extraction electrode laminated on the substrate having a first hole; and (c) a step of forming a sacrificial layer so as to fill the first hole and cover the extraction electrode. (D) The sacrificial layer filled in the first hole has a diameter larger than that of the first hole.The cathode electrode is exposed from the bottomForming a second hole; and (e) the second hole.On the bottom surface and on the sacrificial layerAgainst,Forming an electron emitting material; and (f) removing the sacrificial layer after the step (e),Together with the sacrificial layerRemoving the electron-emitting material formed on the sacrificial layer.The step (a) includes a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a position corresponding to the first hole on the transparent substrate. A step of forming a laminated structure, wherein the step (b) uses a first lithography technique in which light is irradiated from the lower surface side of the substrate using the opaque insulating material layer or the opaque conductive material layer as a mask, The step of forming the first hole, and the step (b) is a step of forming the first hole by using the first lithography technique by exposure with diffused light..
  5. A method of manufacturing a cold cathode display device according to claim 4, wherein (a) a step of preparing a substrate having a cathode electrode, (b) a first hole reaching the cathode electrode is laminated on the substrate. Forming a dielectric layer and an extraction electrode; (c) filling the first hole and forming a sacrificial layer so as to cover the extraction electrode; and (d) filling the first hole. Forming a second hole in the sacrificial layer having a diameter smaller than that of the first hole and exposing the cathode electrode from the bottom surface; and (e) on the bottom surface of the second hole. And (f) forming the electron-emitting material on the sacrificial layer, and (f) removing the sacrificial layer after the step (e) to form the sacrificial layer together with the sacrificial layer. Removing the electron emission material, and comprising the step (a Forming a laminated structure including a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a location corresponding to the first hole on the transparent substrate. In the step (b), the first hole is formed using a first lithography technique in which light is irradiated from the lower surface side of the substrate using the opaque insulating material layer or the opaque conductive material layer as a mask. In the step (b), after forming the third hole using the first lithography technique by exposure with parallel light, isotropic etching is performed on the third hole. Forming the first hole by applying the step (b), wherein the step (b) includes (b-A) the insulating layer having photosensitivity so as to cover the substrate on which the cathode electrode is formed; The extraction electrode layer and the order And (b-B) removing the exposed portion of the insulating layer and the extracted electrode formed on the exposed insulating layer by the first lithography step, And (b-C) the step of forming the first hole by performing the isotropic etching using the extraction electrode as a mask after the step (b-B). Have.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.
[0016]
<Embodiment 1>
FIG. 1 is a plan view showing a structure of a cathode substrate 100 of a display device (hereinafter referred to as a cold cathode display device) using a cold cathode electron source produced by the manufacturing method of the present invention.
[0017]
In the cathode substrate 100 shown in FIG. 1, a cathode electrode 2 having a laminated structure composed of a transparent conductive material layer and an opaque conductive material layer is disposed in a stripe pattern on a transparent substrate (for example, a glass substrate) 1. Has been. A transparent insulating layer 3 having transparency is formed on the cathode electrode 2 so as to expose the end of the cathode electrode 2. In addition, on the transparent insulating layer 3, the extraction electrodes 4 are arranged in stripes in a direction orthogonal to the arrangement direction of the cathode electrode 2.
[0018]
Here, the overlapping part of the cathode electrode 2 and the extraction electrode 4 corresponds to one pixel, and the overlapping part has a plurality of holes so that the cathode electrode 2 (specifically, the electron emission part) is exposed from the bottom. The part 5 is perforated through the extraction electrode 4 and the transparent insulating layer 3.
[0019]
FIG. 2 is an enlarged cross-sectional view of the cathode substrate 100 corresponding to one pixel of FIG. 1 (that is, the overlapping portion of the cathode electrode 2 and the extraction electrode 4). Here, FIG. 2 is a cross-sectional view of the cathode substrate 100 shown in FIG.
[0020]
In FIG. 2, a cathode substrate 100 is configured by laminating a transparent conductive material layer 2a, an opaque conductive material layer 2b, a transparent insulating layer 3 and an extraction electrode 4 on the substrate 1 in this order. A plurality of holes 5 extending from the surface of the extraction electrode 4 to the cathode electrode 2 are formed. Here, on the cathode electrode 2 exposed from the hole portion 5, an electron emission portion 6 such as a CNT (Cabon Nano Tube) is formed.
[0021]
Although not shown in FIG. 2, the anode substrate is provided to face the cathode substrate 100, and an outer frame for keeping the distance between the substrates constant is attached to the outer peripheral portion. Furthermore, the space existing between the cathode substrate 100 and the anode substrate is kept in a vacuum, and in order to keep the distance between the two substrates constant, pillars are also provided at predetermined locations other than the outer frame.
[0022]
In the cold cathode display device shown in FIGS. 1 and 2, by applying a positive voltage to the extraction electrode 4 with respect to the cathode electrode 2, an electric field is applied to the electron emission portion 6, and electrons are emitted from the electron emission portion 6. The The emitted electrons collide with the phosphor screen on the anode electrode set at a higher positive voltage, thereby enabling light emission display of the cold cathode display device.
[0023]
As described above, since the opaque conductive material layer 2b is provided between the substrate 1 and the transparent insulating layer 3, the following manufacturing method can be carried out (that is, used as an exposure mask), In the cold cathode display device completed by the manufacturing method, a short circuit between the cathode electrode 2 and the extraction electrode 4 can be prevented.
[0024]
Next, the manufacturing method according to the present embodiment will be described more specifically below based on enlarged sectional views showing the order of the steps.
[0025]
First, a cathode electrode 2 having a laminated structure composed of a transparent conductive material layer 2a such as ITO (indium tin oxide) and an opaque conductive material layer 2b such as metal is formed on a substrate 1 such as a glass substrate. (FIG. 3). Here, the opaque conductive material layer 2b is laminated on the transparent conductive material layer 2a.
[0026]
Specifically, a transparent conductive material layer 2a such as ITO is formed on the substrate 1 with a thickness of, for example, 200 nm by a method such as CVD or sputtering. Thereafter, an opaque conductive material layer 2b such as Al (aluminum), Cr (chromium), W (tungsten) or the like is formed to a thickness of, for example, 200 nm by the same CVD method, sputtering method, vapor deposition method, or the like.
[0027]
That is, the stacked cathode electrode 2 having a thickness of about 400 nm is formed on the substrate 1.
[0028]
Here, a glass substrate is exemplified as the substrate 1 and ITO is exemplified as the transparent conductive material layer 2a. However, the substrate 1 and the transparent conductive material layer 2a have transparency in the wavelength region of light for back exposure used in a subsequent process. Any other material can be employed (for example, a transparent plastic substrate or the like can be employed as the substrate 1).
[0029]
Further, the cathode electrode 2 is processed using a normal lithography process, so that a plurality of cathode electrodes 2 having a line width of, for example, about 100 μm are arranged in a stripe shape as shown in FIG. Here, the interval between the cathode electrodes 2 is about 100 μm (FIG. 4).
[0030]
Next, a positive photosensitive material film (hereinafter referred to as a positive resist) 10 is formed on the cathode electrode 2 by spin coating (FIG. 5).
[0031]
Next, by applying a normal lithography process, the positive resist 10 is patterned into a predetermined shape by exposure, and then wet etching is performed, whereby a diameter of about 10 μm is formed at a predetermined position of the opaque conductive material layer 2b. The opening 11 is formed. Then, after completion of the process, the positive resist 10 is peeled off (FIG. 6).
[0032]
Here, in the wet etching, only the opaque conductive material layer 2b is selectively etched.
[0033]
Next, after forming a silicon crosslinked polymer having a thickness of about 6 μm so as to cover the cathode electrode 2 (specifically, the patterned opaque conductive material layer 2b and the transparent conductive material layer 2a) by spin coating, The transparent insulating layer 3 is formed by thermosetting (FIG. 7).
[0034]
The transparent insulating layer 3 need not be limited to the above, and may be an organic material such as polyimide, and an inorganic material such as SiO2 (silicon dioxide), SiN (silicon nitride), or SOG (spin on glass). It may be adopted.
[0035]
In addition to the spin coating method, a CVD method, a PVD (Physical Vapor Deposition) method, a printing method, or the like may be adopted as the forming method, and the film thickness may be 1 μm or more.
[0036]
Next, a negative photosensitive material film (hereinafter referred to as a negative resist) 12 is formed on the transparent insulating layer 3 by spin coating (FIG. 8). Here, the film thickness of the negative resist 12 is preferably 1 μm or more in consideration of the subsequent lift-off process, and is set to about 2 μm in the present embodiment.
[0037]
Next, by exposing the negative resist 12 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b) from the back side of the substrate 1 by using a normal lithography technique, The negative resist 12 is photocured (FIG. 9).
[0038]
As the exposure light 13 at this time, light having a non-uniform directionality (hereinafter referred to as diffused light) 13 is used as shown in FIG.
[0039]
The exposure with the diffused light 13 is performed, for example, by setting the vertical line of the substrate 1 to have an angle of about 10 to 20 degrees with respect to the parallel light and rotating the substrate 1. Alternatively, as another method, there is a method of performing exposure by installing a diffusion plate between the substrate 1 and the light source. As another method, there is a method using light emitted from a flat light source.
[0040]
Returning to the manufacturing method of the cold cathode display device, the negative resist 12 in the non-photosensitive portion is removed through a developing procedure such as reversal baking and development after the exposure step (FIG. 10). Here, in the above process, the opaque electrode material layer 2 b is used as an exposure mask, and the exposure process is performed using the diffused light 13. Therefore, the width of the remaining negative resist 12 is larger than the width of the opening 11. Become.
[0041]
Next, an extraction electrode 4 such as W is deposited by sputtering so as to cover the transparent insulating layer 3 and the remaining negative resist 12 so that the thickness from the negative resist 12 is about 200 nm. (FIG. 11).
[0042]
Here, although W was adopted as the material of the extraction electrode layer 4, for example, even when using a conductive material such as Ni (nickel), Pt (platinum), Cr, Ag (silver), Al, conductive silicon, Similar effects can be obtained. Further, as a forming method, an evaporation method, a CVD method, a printing method, or the like may be used.
[0043]
Thereafter, the extraction electrode 4 is patterned into the stripe shape shown in FIG. 1 using a normal lithography technique.
[0044]
Next, the extraction electrode 4 formed on the negative resist 12 is removed by lift-off treatment of the remaining negative resist 12 (FIG. 12).
[0045]
In this embodiment, ethanol is used to remove the negative resist 12. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is taken into consideration. If there is no influence on the other, an amine-based liquid which is a general removal liquid is used. A removal solution can be used. Further, means such as bubbling is effective in order to prevent reattachment of the extraction electrode 4 removed by the lift-off process.
[0046]
Next, anisotropic etching (for example, reactive ion etching or the like) is performed by using the extraction electrode 4 having a predetermined shape as a hard mask up to the above-described steps to reach the cathode electrode 2 (specifically, the opening 11). The transparent conductive material layer 2a is exposed) to form a hole 5 (FIG. 13).
[0047]
That is, by the anisotropic etching process, as shown in FIGS. 1 and 2, a hole portion 5 that penetrates the extraction electrode 4 and the transparent insulating layer 3 is formed in an overlapping region between the cathode electrode 2 and the extraction electrode 4. Established.
[0048]
Here, the anisotropic etching process is performed, for example, by introducing CF 4 (carbon tetrafluoride) and O 2 (oxygen) as an etching gas at a split flow ratio of 4: 1, under a pressure of 100 mTorr and a high-frequency power of 200 W. .
[0049]
In addition, since the polymer deposit may adhere to the side wall of the hole 5 after the anisotropic etching, the polymer deposit may be peeled off with an amine-based stripping solution. The stripping condition is desirably weaker than that of the normal stripping process in order to prevent damage to the polymer insulating layer due to the stripping process. For example, the cathode substrate 100 being manufactured for about 40 minutes at a liquid temperature of about 40 ° C. Soak.
[0050]
Next, a positive type is formed by spin coating so that the film thickness from the upper surface of the extraction electrode 4 is 1 μm or more so as to fill the hole 5 formed in the step and cover the extraction electrode 4. A resist (hereinafter referred to as a sacrificial layer) 14 is formed (FIG. 14). Here, the sacrificial layer 14 is not particularly limited as long as it is an organic insulating material having photosensitivity. The sacrificial layer 14 has a thickness of 1 μm or more from the upper surface of the extraction electrode 4 in consideration of the subsequent lift-off process.
[0051]
Next, the sacrificial layer 14 is exposed from the back surface of the substrate 1 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material 2b) using a lithography technique (FIG. 15). The exposure light 15 at this time is light with uniform directionality as shown in FIG. 15 (that is, light substantially parallel to the normal direction of the main surface of the substrate 1, hereinafter referred to as parallel light). ) Use 15.
[0052]
Next, development is performed after the above process, and the sacrificial layer 14 in the exposed portion is removed (FIG. 16). As a result, fine holes 16 having a predetermined shape are formed in the sacrificial layer 14. That is, in the sacrificial layer 14 filled in the hole 5, a micro hole 16 having a diameter smaller than that of the hole 5 is formed. Therefore, as can be seen from FIG. 16, the sacrificial layer 14 remains on the side surface of the hole 5 and on the extraction electrode 4. Further, the cathode electrode 2 (specifically, the transparent conductive material layer 2 a) is exposed from the bottom surface of the fine hole 16.
[0053]
Next, the electron emission part 6 is formed with respect to the fine hole 16 formed in the said process. At this time, the electron emission material 17 is formed on the cathode electrode 2 (specifically, the transparent conductive material layer 2a), and the electron emission material 17 is also formed on the sacrificial layer 14 (FIG. 17).
[0054]
As a method for forming the electron emission material 17, for example, a paste in which CNTs are sufficiently dispersed is applied by spin coating to the upper surface of the cathode substrate 100 that is being manufactured up to the above step, and then 120 ° C. By performing a drying process for 10 minutes, an electron emission material 17 made of CNT or the like is formed on the cathode electrode 2 and the sacrificial layer 14.
[0055]
Here, since the solid content of the paste is low, the film of the electron emission material 17 formed in the micropores 16 after drying has a shape that is thinly attached to the side surfaces and bottom of the micropores 16 as shown in FIG. Become.
[0056]
In the present embodiment, the electron emission material 17 is applied using a spin coating method, but a method such as a printing method or a spray coating method may be employed. Furthermore, when applying a paste containing CNT, ultrasonic paste, vacuum defoaming, or the like can be applied to the fine holes 16 more efficiently.
[0057]
After the above steps, finally, the sacrificial layer 14 is removed by performing a lift-off process, and the electron emitting material 17 adhering to the sacrificial layer 14 is also removed at the same time. Thereby, the electron emission part 6 can be formed on a cathode electrode (transparent conductive material layer 2a) (FIG. 2).
[0058]
Here, for example, ethanol can be used to remove the sacrificial layer 14. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is taken into consideration. If there is no influence on others, an amine-based removal liquid which is a general removal liquid can be used. Further, by performing bubbling or the like when performing the removal process, it is possible to prevent reattachment of the lifted-off electron emission portion material 17.
[0059]
By adopting the above manufacturing method, as can be seen from FIG. 16, the sacrificial layer 14 is formed on the side surface of the hole 5, so that even if the electron emitting material 17 is formed in the microhole 16, The electron-emitting material 17 adhering to the sacrificial layer 14 can be removed together with the sacrificial layer 14 by the lift-off process, and the electron-emitting material 17 can be prevented from adhering to the side surface of the hole 5. .
[0060]
Therefore, a short circuit between the cathode electrode 2 and the extraction electrode 4 in the finished product can be prevented.
[0061]
Further, by forming the transparent conductive material layer 2a and the opaque conductive material layer 2b having the opening portion 11 at a predetermined location on the substrate 1 having transparency, when creating the hole 5 and the fine hole 16, A lithography process in which exposure is performed from below the substrate 1 can be performed.
[0062]
Moreover, by using the diffused light 13 for the exposure processing of the negative resist 12, the hole 5 having a diameter larger than that of the opening 11 can be easily formed by performing a simple lithography process.
[0063]
Further, by using the parallel light 15 for the exposure processing of the sacrificial layer 14, the sacrificial layer 14 that is easily filled in the hole 5 can be easily filled with the sacrificial layer 14 by performing a simple lithography process. Micropores 16 having a small diameter (the same size as the opening 11) can be formed.
[0064]
Moreover, since the organic insulating material is used as the sacrificial layer 14, the following effects are obtained.
[0065]
When removing the sacrificial layer 14, it is necessary to form the sacrificial layer 14 having a thickness of 1 μm or more in order to reliably remove the sacrificial layer 14 and the electron emission material formed on the sacrificial layer 14 by lift-off. (If the sacrificial layer 14 is too thin, only the sacrificial layer 14 is removed, and the electron emission material remains fixed on the extraction electrode layer 4 and the like).
[0066]
However, as in the prior art, when an inorganic insulating material such as alumina or silicon oxide is used as the sacrificial layer 14 and a film thickness of 1 μm or more is formed, stress is generated in the sacrificial layer 14 and the substrate 1 or the like. In other words, the sacrificial layer 14 or the transparent insulating layer 3 may be peeled off.
[0067]
Therefore, it is difficult to make the sacrificial layer made of an inorganic insulating material thicker than 1 μm, and it has been impossible to reliably perform the lift-off of an electron emission material such as CNT.
[0068]
However, when an organic insulating material is used, even if it is formed with a film thickness of 1 μm or more, the stress as described above does not occur. 14 or the transparent insulating layer 3 does not peel off.
[0069]
Therefore, an organic insulating material is used, and the sacrificial layer 14 can be formed with a thickness of 1 μm or more. Therefore, when the electron emitting material is formed, an excess electron emitting material attached on the sacrificial layer 14 is removed. Therefore, the lift-off process to be performed can be easily performed.
[0070]
Further, a material having photosensitivity such as a resist is adopted as the sacrificial layer 14, and a photoresist process for exposing the sacrificial layer 14 from the opening 11 is performed, so that the hole 5 can be finely formed without causing a positional shift. Holes 16 can be formed.
[0071]
That is, when the photoresist process for exposing the resist from above the substrate 1 is performed as in the prior art, two masks are required to form the hole 5 and the fine hole 16. Since the sizes of the hole 5 and the fine hole 16 are too small, the mutual margin of the mask position becomes considerably severe, and it is difficult to normally form the fine hole 16 in the hole 5.
[0072]
However, in the present embodiment, since the fixed cathode electrode 2 (specifically, the opaque conductive material layer 2b) is used as a common mask, the above-described positional deviation does not occur. The micropores 16 can be formed in the hole 5 simply and accurately.
[0073]
<Embodiment 2>
In the first embodiment, when the hole 5 and the fine hole 16 are formed, the exposure / development / removal process using the diffused light 13 and the exposure / development / removal process using the parallel light 15 are performed.
[0074]
However, in the present embodiment, the hole 5 is formed by performing the exposure / development / removal process using the parallel light 15 and the isotropic etching process of the sacrificial layer 14, and then the exposure using the parallel light 15. A feature is that the fine holes 16 are formed by performing development / removal processing.
[0075]
Hereinafter, the manufacturing method according to the present embodiment will be specifically described based on cross-sectional views showing the order of steps.
[0076]
First, since the steps up to FIGS. 3 to 8 are the same as those in the first embodiment, the description thereof is omitted here.
[0077]
In the manufacturing method according to the present embodiment, next, the negative resist 12 is exposed using the parallel light 15 (FIG. 18).
[0078]
Specifically, the negative resist 12 is exposed by the parallel light 15 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b) from the back side of the substrate 1, and the negative type is exposed. The resist 12 is photocured.
[0079]
Next, development is performed after the above process, and the negative resist 12 is removed from the unexposed portion (FIG. 19). Here, in the exposure step, the opaque conductive material layer 2b having the opening 11 is used as a mask and the exposure process is performed using the parallel light 15. Therefore, the width of the remaining negative resist 12 is the width of the opening 11. Is almost the same size.
[0080]
Next, as in the first embodiment, the extraction electrode 4 is deposited so as to cover the transparent insulating layer 3 and the remaining negative resist 12 (FIG. 20).
[0081]
Next, as in the first embodiment, the negative resist 12 is removed by the lift-off process of the remaining negative resist 12, and the extraction electrode 4 formed on the negative resist 12 is removed. (FIG. 21).
[0082]
Next, in the present embodiment, the cathode electrode 2 is formed by performing isotropic etching such as wet etching on the transparent insulating layer 3 using the extraction electrode 4 having a predetermined shape in the above steps as a hard mask. The hole 5 is formed (FIG. 22) that leads to (the transparent conductive material layer 2a is exposed from the opening 11).
[0083]
Here, as the etching solution, for example, a mixed solution of anisole and xylene can be used. Further, in this embodiment, wet etching is performed as isotropic etching, but reactive ion etching may be used if there is a condition for undercut.
[0084]
Next, as in the first embodiment, a sacrificial layer 14 is formed so as to fill the hole 5 (FIG. 23), and the sacrificial layer 14 is exposed using parallel light 15 (FIG. 24). Then, the sacrificial layer 14 in the exposed portion is removed. Thereby, the fine hole 16 can be formed (FIG. 25).
[0085]
Up to this step, the sacrificial layer 14 remains on the side surface of the hole 5 and on the extraction electrode 4. Further, the cathode electrode 2 (transparent conductive material layer 2 a) is exposed from the bottom surface of the fine hole 16.
[0086]
Next, the electron emission part 6 is formed with respect to the cathode electrode 2 of the bottom part of the micropore 16 formed in the said process. At this time, the electron emission portion 6 may be formed by the method described in the first embodiment, but the electron emission portion 6 can also be formed by the following method.
[0087]
In the present embodiment, as a method for forming the electron emission portion 6, for example, iron, nickel, cobalt, or the like is vapor-deposited on the upper surface of the cathode substrate 100 that is being manufactured up to the above-described process using a sputtering method. As a result, the catalyst layer 20 is formed on the cathode electrode 2 and the sacrificial layer 11 (FIG. 26).
[0088]
In the sputtering method, it is considered that the catalyst layer 20 does not adhere to the side wall of the fine hole 16 because the straightness of the scattered particles from the target is good. However, actually, the scattered particles reach the micropores 16 at an angle, and the catalyst layer 20 is also attached to the wall surfaces of the micropores 16.
[0089]
Next, the sacrificial layer 14 is removed by a lift-off process, and the catalyst layer 20 adhering to the sacrificial layer 14 is simultaneously removed (FIG. 27). Thereby, the catalyst layer 20 remains only on the upper surface of the cathode electrode 2 (specifically, the transparent conductive material layer 2a).
[0090]
Here, ethanol is used to remove the sacrificial layer 14. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is taken into consideration. Liquid can be used. For removal, it is effective to use a means such as bubbling in order to prevent the lifted off catalyst layer 20 from reattaching to the transparent insulating layer 3.
[0091]
Finally, the catalyst layer 20 is grown by the CVD method performed in an organic gas atmosphere such as methane gas, thereby forming the electron emission portion 6 made of CNT (FIG. 28).
[0092]
As described above, by performing a combination of the exposure / development / removal process using the parallel light 15 and the isotropic etching process of the sacrificial layer 14, as in the first embodiment, the deviation margin for forming both holes is as follows. Therefore, it is possible to easily create the hole 5 and the fine hole 16 in the sacrificial layer 14 filled in the hole 5.
[0093]
Therefore, even if the electron-emitting material 17 is formed in the microhole 16, the electron-emitting material 17 adhering to the sacrificial layer 14 together with the sacrificial layer 14 can be removed by a later lift-off process. It is possible to prevent the electron emission material 17 from adhering to the side surface.
[0094]
Therefore, a short circuit between the cathode electrode 2 and the extraction electrode 4 in the finished product can be prevented.
[0095]
<Embodiment 3>
In the present embodiment, the transparent insulating layer 3 formed on the cathode electrode 2 in the first and second embodiments is a photosensitive material.
[0096]
Hereinafter, the manufacturing method according to the present embodiment will be specifically described based on cross-sectional views showing the order of steps.
[0097]
First, since the processes up to FIGS. 3 to 6 are the same as those in the first embodiment, description thereof is omitted here.
[0098]
Next, a transparent insulating layer 30 having a transparency of about 6 μm so as to cover the cathode electrode 2 (specifically, the patterned opaque conductive material layer 2b and the transparent conductive material layer 2a) by CVD or the like. (FIG. 29).
[0099]
Here, in the present embodiment, the transparent insulating layer 30 has a positive photosensitive property. Specifically, a glass paste having photosensitivity obtained by containing an additive, polyimide having photosensitivity, or the like can be employed as the transparent insulating layer 30. Further, a positive photosensitive silicon crosslinked polymer may be formed by spin coating.
[0100]
Next, an extraction electrode 4 such as W is deposited to a thickness of about 200 nm so as to cover the transparent insulating layer 30 by sputtering (FIG. 30). Thereafter, the extraction electrode 4 is patterned into a stripe shape using a normal lithography technique as shown in FIG.
[0101]
Next, a predetermined portion of the positive type transparent insulating layer 30 is exposed from the back side of the substrate 1 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b) (FIG. 31). ). Here, the parallel light 15 is employed as the exposure light.
[0102]
Next, after the transparent insulating layer 30 is developed, the exposed portion of the transparent insulating layer 30 is lifted off. By the lift-off process, the extraction electrode 4 formed on the exposed transparent insulating layer 30 is removed (FIG. 32).
[0103]
Here, a mixed solution of anisole and xylene is used as the developer. For development, means such as bubbling is effective in order to prevent reattachment of the lifted-off extraction electrode 4.
[0104]
Next, the wall surface of the transparent insulating layer 30 is etched away by performing isotropic etching using the extraction electrode 4 having a predetermined shape as a hard mask by the processing up to the above-described steps. Thereby, the hole 5 is formed in the transparent insulating layer 30 and the extraction electrode 4 (FIG. 33).
[0105]
Here, the same solution as the developer can be used as the solution used in the isotropic etching. However, since the etching rate is slower than that of the photosensitive region, care must be taken in the etching process.
[0106]
Next, sacrifice is performed by spin coating or the like so that the hole 5 formed in the above process is filled and the film thickness from the upper surface of the extraction electrode 4 is 1 μm or more so as to cover the extraction electrode 4. Layer 31 is formed (FIG. 34).
[0107]
Here, the sacrificial layer 31 has an etching selectivity with respect to the transparent insulating layer 30. For example, when a positive photosensitive silicon cross-linked polymer is used as the transparent insulating layer 30, a normal positive resist can be used as the sacrificial layer 31. The reason why the film thickness is set to 1 μm or more from the upper surface of the extraction electrode 4 is to ensure successful lift-off.
[0108]
The process up to the step of forming the micro holes 16 by the lithography process using the parallel light 15 and forming the electron method emitting portion 6 in the micro holes 16 is the same as in the other embodiments described above. Omitted.
[0109]
As described above, the manufacturing method of the cold cathode display device according to the present embodiment has the following effects.
[0110]
In other words, since a material having photosensitivity is employed as the transparent insulating layer 30, the steps of applying a negative resist on the transparent insulating layer 30 and patterning can be omitted as in the first and second embodiments. The manufacturing process can be simplified.
[0111]
In the second embodiment, isotropic etching such as wet etching is used as an etching method for the transparent insulating layer 3 in forming the hole 5. However, in this method, the amount of undercut may become too large, and it becomes impossible to form the holes 5 with a narrow pitch, and it may not be possible to increase the density of the holes 5.
[0112]
Therefore, in the present embodiment, as described with reference to FIGS. 32 and 33, isotropic etching is performed after anisotropic etching is performed in advance, so that lateral etching is performed when the hole 5 is formed. Therefore, the etching control of the transparent insulating layer 30 can be easily performed. Accordingly, the side surfaces of the transparent insulating layer 30 are not etched too much, and the pitch of the hole portions 5 can be reduced, so that the hole portions 5 can be densified.
[0113]
Needless to say, the sacrificial layer 31 has an etching selectivity with respect to the transparent insulating layer 30, and it goes without saying that the higher the etching selectivity, the better.
[0114]
In the present embodiment, as described in the second embodiment, the combination of the exposure / development / removal process using the parallel light 15 and the isotropic etching process of the sacrificial layer 31 is performed, so that the hole portion is formed. 5 and the fine hole 16 are formed, but as described in the first embodiment, by performing the exposure / development / removal process using the diffused light 13 and the exposure / development / removal process using the parallel light 15, 5 and fine holes 16 may be formed.
[0115]
<Embodiment 4>
In the first embodiment, since the cathode electrode 2 is formed in a stripe shape, the following problems may actually occur.
[0116]
As described with reference to FIG. 9, when the negative resist 12 is exposed to the diffused light 13 by using the cathode electrode 2 (specifically, the opaque conductive material layer 2b) as a mask, it is shown in FIG. As described above, since the cathode electrode 2 is formed in a stripe shape, the negative resist 12 existing above the region where the cathode electrode 2 is not formed is also exposed.
[0117]
Accordingly, the negative resist 12 remains even above the region between the cathode electrodes 2 by performing the development process. This is shown in FIG. Here, FIG. 35 is a cross-sectional view of the cathode substrate 100 in the middle of manufacture when viewed from the direction of arrangement of the cathode electrode 2 (that is, a cross-sectional view of the cathode substrate 100 in the middle of manufacture of the AA cross section in FIG. 1). is there.
[0118]
After that, when the extraction electrode 4 is formed and lift-off processing is performed, the extraction electrode 4 formed on the negative resist 12 together with the remaining negative resist 12 is also removed, as shown in FIG. Also, the extraction electrode 4 is not present above the region between the cathode electrodes 2.
[0119]
Therefore, when the etching process is performed using the extraction electrode 4 of the shape as a mask, the transparent insulating layer 3 on the region between the cathode electrodes 2 is also removed (FIG. 37). Thereafter, even if the sacrificial layer 14 is formed, the sacrificial layer 14 in the region between the cathode electrodes 2 is removed by the exposure process using the parallel light 15 (FIG. 15).
[0120]
If the electron emission portion 6 is formed in this state, the electron emission portion 6 is also formed between the cathode electrodes 2 (FIG. 38), and as a result, a short circuit occurs between the adjacent cathode electrodes 2. Sometimes.
[0121]
In order to solve such a problem, in the present embodiment, as shown in FIG. 39, in order to prevent exposure of the negative resist 12 existing above the region between the cathode electrodes 2, A light shielding plate 40 is provided between the substrate 1 and the substrate 1.
[0122]
Thereby, the negative resist 12 above the region between the cathode electrodes 2 can also be removed (FIG. 40). After that, the extraction electrode 4 is formed and lift-off treatment is performed. The extraction electrode 4 can remain (FIG. 41).
[0123]
As described above, the transparent insulating layer 3 can remain in the region between the cathode electrodes 2 even when etching is performed using the extraction electrode 4 having the shape shown in FIG. 41 as a mask (FIG. 42). Even if the electron emission portion 6 is formed after that, it is possible to completely prevent the above-described problem of short between the cathodes.
[0124]
<Embodiment 5>
In the fourth embodiment, the problem that occurs because the cathode electrode 2 is arranged in a stripe shape is pointed out. However, the following problem occurs because the extraction electrode 4 is formed in a stripe shape. There is a fear.
[0125]
That is, since the extraction electrode 4 is arranged in a stripe shape, as shown in FIG. 43, in addition to the hole 5, the transparent insulating layer 3 has a groove 50 where the cathode electrode 2 is exposed from the bottom. End up. This is because the etching process was performed using the extraction electrodes 4 arranged in stripes as a hard mask. Here, FIG. 43 is a view showing a BB cross section of the cathode substrate 100 shown in FIG.
[0126]
As can be seen from FIG. 43, when the cathode electrode 2 is exposed in the region between the extraction electrodes 4, the cathode electrode 2 is provided facing the cathode substrate 100 when the cold cathode display device is operated. Abnormal discharge may occur between the anode electrode (not shown).
[0127]
In order to solve the problem, the following manufacturing method is adopted in the present embodiment.
[0128]
In the first embodiment, as described with reference to FIGS. 11 and 12, the negative resist 12 is lifted off, whereby a cathode substrate 100 in the middle of manufacture as shown in FIG. 44 is formed. Here, FIG. 44 is a view observed from the same cross-sectional direction as FIG.
[0129]
Next, a resist 51 is formed on the cathode substrate 100 shown in FIG. 44 (FIG. 45).
[0130]
Specifically, for example, a resist 51 is applied to the entire surface of the cathode substrate 100 shown in FIG. 44 using a spin coating method or the like, and the extraction electrodes 4 arranged in a stripe shape using a general lithography technique. The resist 51 is patterned so as to completely cover the region therebetween.
[0131]
Next, as shown in FIG. 45, after applying the resist 51, as in the first embodiment, an etching process is performed using the extraction electrode 4 as a hard mask, and then the resist 51 is removed. (FIG. 46).
[0132]
Since the subsequent steps are the same as those of the first embodiment, detailed description thereof is omitted here.
[0133]
As described above, in this embodiment, in order to avoid the removal of the transparent insulating layer 3 existing under the region between the extraction electrodes 4 by etching, a resist 51 is formed in the gap between the extraction electrodes 4 before the etching process. Therefore, exposure of the cathode electrode 2 located below the region between the extraction electrodes 4 can be prevented by the etching process for forming the hole 5. Therefore, it is possible to prevent abnormal discharge between the anode electrode and the cathode electrode 2 from occurring due to the operation of the cold cathode display device as a completed product.
[0134]
By the way, in each of the above embodiments, when the exposure process using the diffused light 13 and the parallel light 15 is performed, the laminated structure composed of the transparent conductive material layer 2a and the opaque conductive material layer 2b is formed on the transparent substrate 1. Although the case where the cathode electrode 2 (FIG. 47 (a diagram corresponding to the AA cross section in FIG. 1)) is used as a mask has been mentioned, the same effect can be obtained even if the laminated structure shown below is used as a mask. be able to.
[0135]
First, as shown in FIG. 48 (which corresponds to the AA cross section of FIG. 1), the order of lamination of the transparent conductive material layer 2a and the opaque conductive material layer 2b is reversed, and the transparent conductive material layer 2b is Alternatively, the cathode electrode 2 having a structure in which the transparent conductive material layer 2a is laminated may be employed.
[0136]
However, when the laminated structure shown in FIG. 48 is adopted, the transparent electrode material layer 2a cannot be normally covered at the edge of the opening 11 formed in the opaque conductive material layer 2b, and a step may be generated. Therefore, it is necessary to pay attention to the formation method (when the stacked structure of FIG. 47 is adopted, this need not be considered).
[0137]
47 and 48, the opaque conductive material layer 2b is made of a conductive material such as a metal. However, the present invention is not limited to this, and an insulating material such as polyimide colored with a pigment or the like (hereinafter referred to as an opaque insulating material layer). It may be adopted. In this case, the transparent conductive material layer 2a alone constitutes the cathode electrode 2.
[0138]
By replacing the opaque conductive material layer 2 b with the opaque insulating material layer 60, the function of the light shielding plate 40 described in the fourth embodiment can be imposed on the opaque insulating material layer 60.
[0139]
That is, by forming a laminated structure as shown in FIGS. 49 and 50 (corresponding to the AA cross section in FIG. 1) on the substrate 1, light shielding is performed at a precise position by a simple formation method. A light-shielding layer (the opaque insulating material layer 60 existing between the cathode electrodes 2) having a function of the plate 40 and formed as a part of the opaque insulating material layer 60 can be formed.
[0140]
Note that the opaque conductive material layer 2b can also be provided with the function of the light shielding plate 40. In this case, a laminated structure as shown in FIG. 51 (corresponding to the section AA in FIG. 1) is formed on the substrate 1. Need to create.
[0141]
That is, in FIG. 51, the opaque conductive material layer 2 b that also functions as a light shielding plate and has the opening 11 is formed on the substrate 1. Next, a transparent insulating layer 61 having transparency is formed so as to cover the upper surface of the substrate 1 and the opaque conductive material layer 2b. Then, a stripe-shaped transparent conductive material layer 2 a (in this case, the transparent conductive material layer 2 a alone constitutes the cathode electrode 2) is formed on the upper surface of the transparent insulating layer 61.
[0142]
Here, as the transparent insulating layer 61, for example, a vitrified material formed by printing a glass paste by screen printing and baking at 550 ° C. may be adopted, and SiO 2, SiN, SOG (spin-on-glass) ) Etc. can also be adopted.
[0143]
As shown in the stacked structure (transparent conductive material layer 2a / transparent insulating film 61 / opaque conductive material layer 2b) shown in FIG. 51, the transparent insulating layer 61 is formed between the opaque conductive material layer 2b and the transparent conductive material layer 2a. The reason for this is to insulate the electrical connection between the two conductive material layers 2a and 2b and to prevent the adjacent cathode electrodes 2 from being electrically connected to each other in the cathode electrode 2 formed in a stripe shape. is there.
[0144]
In addition, since the laminated structure shown in FIG. 51 uses, for example, a metal such as Cr, Al, and W as the opaque conductive material layer that functions as the light shielding plate 40, it can be made thinner than when an insulator is used. Thus, there is an advantage that the influence on the upper layer due to the coverage can be suppressed and the patterning is easy.
[0145]
In addition to these laminated structures, the following laminated structures can also be employed.
[0146]
That is, as shown in FIG. 52 (corresponding to the AA cross section in FIG. 1), the opaque cathode electrode 2 having the opening 11 is arranged on the substrate 1 in a stripe shape. A laminated structure formed by filling the transparent resistance layer 62 with transparency in the same stripe shape so as to cover the cathode electrode 2 may be adopted. Here, as the transparent resistance layer 62, ITO or the like having a glass paste can be employed.
[0147]
By adopting the laminated structure (cathode electrode 2 / transparent resistance layer 62) shown in FIG. 52, since the electron emission portion 6 is formed on the transparent resistance layer 62, the emission current value from the electron emission portion 6 is stabilized. Can be made. Therefore, in the cold cathode display device adopting the laminated structure, the variation in luminance of the display screen can be reduced.
[0148]
As shown in FIG. 53 (corresponding to the AA cross section of FIG. 1), the same effect can be obtained even if the order of stacking the cathode electrode 2 and the transparent resistance layer 62 is reversed. . That is, the opaque cathode electrode 2 having the opening 11 is formed on the transparent resistance layer 62 having transparency.
[0149]
Further, in the case of adopting the laminated structure having the transparent resistance layer 62, if the light shielding plate 40 described in the fourth embodiment is provided, for example, FIGS. 54 and 55 (corresponding to the AA cross section in FIG. 1). It may be provided in such a manner as shown in FIG. 2, that is, in a manner provided in the transparent insulating layer 63 having transparency between the laminated structure composed of the cathode electrode and the transparent resistance layer and the substrate.
[0150]
【The invention's effect】
  Claim 1 of the present invention4The manufacturing method of the cold cathode display device according to 1) includes (a) a step of preparing a substrate having a cathode electrode, and (b) an insulating layer having a first hole reaching the cathode electrode and stacked on the substrate. And forming a lead electrode, (c) filling the first hole and forming a sacrificial layer so as to cover the lead electrode, and (d) filling the first hole. The sacrificial layer has a diameter larger than that of the first hole.The cathode electrode is exposed from the bottomForming a second hole; and (e) the second hole.On the bottom surface and on the sacrificial layerAgainst,Forming an electron emitting material; and (f) removing the sacrificial layer after the step (e),Together with the sacrificial layerA step of removing the electron emission material formed on the sacrificial layer,In step (e),A sacrificial layer will be formed on the side surface of the first hole. Therefore, even if the electron-emitting material is formed in the second hole, the electron-emitting material attached on the sacrificial layer can be removed together with the sacrificial layer in the subsequent step (f). Therefore, it is possible to prevent the electron emission material from adhering to the side surface of the first hole, and it is possible to solve the problem that the cathode electrode and the extraction electrode are short-circuited in the finished product.
[Brief description of the drawings]
FIG. 1 is a plan view showing a state of a cathode substrate produced by a manufacturing method according to Embodiment 1. FIG.
FIG. 2 is an enlarged cross-sectional view showing a configuration of a cathode substrate corresponding to one pixel.
FIG. 3 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
4 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to Embodiment 1. FIG.
FIG. 5 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
6 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to Embodiment 1. FIG.
7 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to Embodiment 1. FIG.
FIG. 8 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
FIG. 9 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
FIG. 10 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
FIG. 11 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
12 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to Embodiment 1. FIG.
FIG. 13 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
FIG. 14 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the first embodiment.
FIG. 15 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the first embodiment.
FIG. 16 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the first embodiment.
FIG. 17 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the first embodiment.
FIG. 18 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 19 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 20 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 21 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 22 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 23 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the second embodiment.
FIG. 24 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the second embodiment.
FIG. 25 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the second embodiment.
FIG. 26 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 27 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 28 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the second embodiment.
FIG. 29 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the third embodiment.
30 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to Embodiment 3. FIG.
FIG. 31 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the third embodiment.
32 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to Embodiment 3. FIG.
FIG. 33 is an enlarged cross-sectional view of the cathode substrate for illustrating the steps of the manufacturing method according to the third embodiment.
FIG. 34 is an enlarged cross-sectional view of the cathode substrate for explaining the steps of the manufacturing method according to the third embodiment.
FIG. 35 is a cross-sectional view for explaining a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 36 is a cross-sectional view for explaining a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 37 is a cross-sectional view for explaining a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 38 is a cross-sectional view for explaining a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 39 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fourth embodiment.
FIG. 40 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fourth embodiment.
FIG. 41 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fourth embodiment.
FIG. 42 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fourth embodiment.
FIG. 43 is a cross-sectional view for explaining problems that occur because the extraction electrode is formed in a stripe shape.
44 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fifth embodiment. FIG.
FIG. 45 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fifth embodiment.
FIG. 46 is a cross-sectional view of the cathode substrate for illustrating a process of the manufacturing method according to the fifth embodiment.
FIG. 47 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 48 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 49 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 50 is a cross-sectional view showing an aspect of a stacked structure having a function as a mask during exposure processing.
FIG. 51 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 52 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 53 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 54 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
FIG. 55 is a cross-sectional view showing an aspect of a laminated structure having a function as a mask during exposure processing.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate, 2 Cathode electrode, 2a Transparent conductive material layer, 2b Opaque conductive material layer, 3, 30, 61, 63 Transparent insulating layer, 4 Extraction electrode, 5 Hole, 6 Electron emission part, 10 Positive type photosensitive material Film (positive resist), 11 opening, 12 negative photosensitive material film (negative resist), 13 diffused light, 14, 31 sacrificial layer, 15 parallel light, 16, fine hole, 17 electron emitting material, 20 Catalyst layer, 40 light shielding plate, 50 groove portion, 51 resist, 60 opaque insulating material layer, 62 transparent resistance layer, 100 cathode substrate.

Claims (7)

(A) preparing a substrate having a cathode electrode;
(B) forming an insulating layer and a lead electrode stacked on the substrate, each having a first hole reaching the cathode electrode;
(C) filling the first hole and forming a sacrificial layer so as to cover the extraction electrode;
(D) forming a second hole having a diameter smaller than that of the first hole and exposing the cathode electrode from the bottom surface with respect to the sacrificial layer filled in the first hole;
(E) with respect to said second of said sacrificial layer above and on the bottom surface of the hole, and forming an electron emitting material,
(F) after the step (e), removing the sacrificial layer to remove the electron-emitting material formed on the sacrificial layer together with the sacrificial layer ,
The step (a)
Forming a laminated structure including a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a position corresponding to the first hole on the transparent substrate. ,
The step (b)
Using the opaque insulating material layer or the opaque conductive material layer as a mask to form the first hole by using a first lithography technique that irradiates light from the lower surface side of the substrate;
The step (b)
Using the first lithography technique by exposure with diffused light, forming the first hole,
A method for manufacturing a cold cathode display device. The step (b)
(B-1) a step of laminating the transparent insulating layer and a photosensitive resist in this order so as to cover the substrate on which the cathode electrode is formed;
(B-2) leaving the portion of the resist exposed in the first lithography step on the insulating layer;
(B-3) forming the extraction electrode so as to cover the remaining resist and the insulating layer;
(B-4) removing the extraction electrode on the remaining resist by a lift-off process;
(B-5) After the step (b-4), by etching using the extraction electrode layer as a mask, the step of removing the insulating layer and forming the first hole is provided. ,
The method for manufacturing a cold cathode display device according to claim 1. The step (b)
(B-a) laminating the insulating layer having photosensitivity and the extraction electrode layer in that order so as to cover the substrate on which the cathode electrode is formed;
(Bb) The first hole is formed by removing the exposed portion of the insulating layer and the extraction electrode formed on the exposed insulating layer by the first lithography step. A process,
The method for manufacturing a cold cathode display device according to claim 1. (A) preparing a substrate having a cathode electrode;
  (B) forming an insulating layer and a lead electrode stacked on the substrate, each having a first hole reaching the cathode electrode;
  (C) filling the first hole and forming a sacrificial layer so as to cover the extraction electrode;
  (D) forming a second hole having a diameter smaller than that of the first hole and exposing the cathode electrode from the bottom surface with respect to the sacrificial layer filled in the first hole;
  (E) forming an electron emission material on the bottom surface and the sacrificial layer of the second hole;
  (F) after the step (e), removing the sacrificial layer to remove the electron-emitting material formed on the sacrificial layer together with the sacrificial layer,
  The step (a)
  Forming a laminated structure including a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a position corresponding to the first hole on the transparent substrate. ,
  The step (b)
  Using the opaque insulating material layer or the opaque conductive material layer as a mask to form the first hole by using a first lithography technique that irradiates light from the lower surface side of the substrate;
  The step (b)
  The step of forming the first hole by performing isotropic etching on the third hole after the third hole is formed by using the first lithography technique by exposure with parallel light And
  The step (b)
  (B-A) laminating the insulating layer having photosensitivity and the extraction electrode layer in this order so as to cover the substrate on which the cathode electrode is formed;
  (B-B) The third hole is formed by removing the exposed portion of the insulating layer and the extraction electrode formed on the exposed insulating layer by the first lithography step. Process,
  (BC) After the step (bB), the step of forming the first hole by performing the isotropic etching using the extraction electrode as a mask,
A method for manufacturing a cold cathode display device. The step (a)
  A step of preparing the substrate having a plurality of the cathode electrodes;
  The step (b)
  In the region between the cathode electrodes, the step of performing the first lithography step while shielding the light,
The method for manufacturing a cold cathode display device according to claim 1, wherein: The extraction electrode is plural,
  The step (b)
  In a state where the region between the extraction electrodes is masked, the etching process is performed using the extraction electrodes as a mask.
6. The method of manufacturing a cold cathode display device according to claim 2, 4 or 5. The step (c)
  Forming the sacrificial layer having photosensitivity,
  The step (d)
  Using the opaque conductive material layer or the opaque insulating material layer as a mask, the second hole is formed using a second lithography technique in which light is irradiated from the lower surface side of the substrate.
The method for manufacturing a cold cathode display device according to any one of claims 1 to 6.

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