JP3832914B2 - Electron beam exposure apparatus and device manufacturing method using the apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron beam exposure apparatus, and more particularly to irradiating a first object using a light source that emits an electron beam for direct wafer drawing or mask / reticle exposure, and reducing the electron beam from the first object by reducing electron optics. The present invention relates to an electron beam exposure apparatus that projects and exposes a second object through a system.
[0002]
[Prior art]
Conventional electron beam exposure apparatuses include a point beam type that uses a beam in the form of a spot, and a variable rectangular beam type that uses a variable size rectangular cross section.
[0003]
Since the point beam type electron beam exposure apparatus performs drawing using a single electron beam and has a low throughput, it is used only for research and development. The variable rectangular beam type electron beam exposure system has a throughput that is one to two orders of magnitude higher than that of the point type, but basically, a single electron beam is used for drawing, so fine patterns of about 0.1 μm are highly integrated. In the case of exposing a pattern clogged with a degree, there are still many problems in terms of throughput.
[0004]
As an apparatus for solving this problem, a substrate having a plurality of apertures is illuminated with an electron beam, a plurality of electron beams from the plurality of apertures are irradiated on the sample surface, and the plurality of electron beams are deflected so as to deflect the sample surface. There is a multi-electron beam type exposure apparatus that scans and draws a pattern by individually turning on / off a plurality of electron beams according to the pattern to be drawn. Both of them have a feature that the throughput can be further improved because the area exposed at one time, that is, the exposure area is wider than the conventional one.
[0005]
[Problems to be solved by the invention]
However, in the multi-electron beam exposure apparatus, there is a problem that a pattern to be drawn is distorted if there are variations in intensity among a plurality of electron beams.
[0006]
[Means for Solving the Problems]
The present invention has been made in view of the above-described conventional problems, and an embodiment of the electron beam exposure apparatus of the present invention illuminates a first object having a plurality of openings using a light source that emits an electron beam. In an electron beam exposure apparatus that exposes a second object with an electron beam from the first object,
An illumination electron optical system having a plurality of electron lenses and means for obtaining information on an intensity distribution of an electron beam applied to the first object, and irradiating the first object with an electron beam from the light source;
An electron optical system that forms an intermediate image of the light source from each of the electron beams that pass through each of the plurality of openings of the first object;
A reduction electron optical system that projects the plurality of intermediate images onto the second object;
The plurality of openings of the first object has an opening area of each opening set so that the currents of electron beams passing through the openings of the plurality of openings substantially match based on the information,
The illumination electron optical system is configured so that each aperture of the plurality of apertures of the first object is obtained based on information on the intensity distribution of the electron beam applied to the first object obtained after setting the aperture area of each aperture. Means for adjusting the electro-optical characteristics of at least two electron lenses of the plurality of electron lenses so that currents of electron beams passing through the plurality of electron lenses substantially coincide with each other.
[0007]
In the electron beam exposure method according to the present invention, an illumination electron optical system having a plurality of electron lenses illuminates a first object having a plurality of openings with an electron beam from a light source, and the plurality of first objects are illuminated by the electron optical system. In the electron beam exposure method, an intermediate image of the light source is formed from each of the electron beams that pass through each of the apertures of the aperture, and the plurality of intermediate images are projected onto the second object by a reduction electron optical system.
A first step of obtaining information on an intensity distribution of an electron beam applied to the first object;
A second stage in which an opening area of each opening is set so that currents of electron beams passing through the openings of the plurality of openings are substantially matched based on the information of the first stage;
After the second stage, information on the intensity distribution of the electron beam irradiating the first object is obtained, and the currents of the electron beams passing through the openings of the plurality of openings of the first object substantially match based on the information. And a third step of adjusting the electro-optical characteristics of at least two of the plurality of electron lenses.
[0010]
The adjusting means adjusts the electro-optical power of at least two electron lenses of the plurality of electron lenses.
[0011]
The adjusting means adjusts the position of at least two electron lenses of the plurality of electron lenses in the optical axis direction of the illumination electron optical system.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
[Description of components of electron beam exposure apparatus]
FIG. 1 is a schematic view of the main part of an electron beam exposure apparatus according to the present invention.
[0021]
In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 1a, a grid 1b, and an anode 1c, and electrons emitted from the cathode 1a form a crossover image between the grid 1b and the anode 1c. (Hereinafter, these crossover images are referred to as light sources.)
[0022]
The electrons emitted from this light source become a substantially parallel electron beam by the condenser lens 2 (illumination electron lens optical system) whose front focal position is at the light source position. The substantially parallel electron beam illuminates the element electron optical system array 3. The condenser lens 2 includes electronic lenses 2a, 2b, and 2c. Then, the optical optical power (focal length) of at least two electron lenses of the electron lenses 2a, 2b, 2c is adjusted, or the optical axis direction of the condenser lens 2 of at least two electron lenses of the electron lenses 2a, 2b, 2c. It is possible to adjust the intensity distribution of the electron beam illuminating the element electron optical system 3 by adjusting the position of or both of them. This point will be described with reference to FIG.
[0023]
When the intensity of the electron beam emitted from the light source is uniform per unit solid angle, that is, when the light distribution of the light source is uniform, the focal length of the condenser lens 2 is f, and the angle θ from the light source to the optical axis AX. Where x is the position where the electron beam emitted in step 1 enters the element electron optical system 3 via the condenser lens 2.
x = f × θ
If the condenser lens 2 has the electron optical characteristics satisfying the above, the intensity distribution of the electron beam illuminated on the element electron optical system 3 becomes uniform (solid line in FIG. 2A). Conversely, by adjusting the electron optical characteristics of the condenser lens 2 (broken line in FIG. 2A), the intensity distribution of the electron beam illuminated on the element electron optical system can be changed.
[0024]
The position at which the electron beam emitted from the light source when satisfying Equation (1) at an angle θ with respect to the optical axis AX enters the element electron optical system 3 is an ideal position x (θ), and the electron beam is actually a condenser lens. X (θ) is the position incident on the element electron optical system 3 via 2, and the ratio of the difference to the ideal position is DIS (θ) = (x (θ) -x (θ)) / x (θ) Then, DIS (θ) is one electro-optical characteristic of the condenser lens 2 and can be displayed as shown in FIG. Then, the electron optical power of at least two electron lenses of the electron lenses 2a, 2b, and 2c is adjusted, or the positions of at least two electron lenses of the electron lenses 2a, 2b, and 2c in the optical axis direction of the illumination electron optical system are set. By adjusting or by adjusting both, DIS (θ) can be changed as shown by an arrow in the figure. Specifically, the excitation current of at least two electron lenses is adjusted, or is adjusted by a drive system that moves the electron lens shown in FIG. 2A in the optical axis direction.
[0025]
For example, if the electron optical characteristics of the condenser lens 2 are adjusted and tilted to the minus side as the output angle θ is further increased, the intensity distribution of the electron beam illuminated on the element electron optical system 3 is compared to that before the adjustment. As the distance from the AX increases, the intensity of the electron beam increases.
[0026]
Here, when the electro-optical characteristics of the condenser lens 2 are adjusted, the electro-optic power of the entire system of the condenser lens 2 is substantially constant, and the position of the front focal position of the condenser lens 2 is also substantially constant. In this way, the electro-optical characteristic (DIS (θ)) of the condenser lens 2 is adjusted.
[0027]
The element electron optical system array 3 is formed by arranging a plurality of element electron optical systems each including an aperture, a blanking electrode, and an electron optical system in a direction perpendicular to the optical axis AX. Details of the element electron optical system array 3 will be described later.
[0028]
The element electron optical system array 3 has a plurality of apertures, and forms a plurality of intermediate images of the light source by electron beams from the plurality of apertures. Each intermediate image is reduced and projected by a reduction electron optical system 4 described later, and the wafer 5 A light source image is formed on the top.
[0029]
At that time, each element of the element electron optical system array 3 is set so that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the element electron optical system array 3 varies the position of each intermediate image in the optical axis direction according to the field curvature of the reduced electron optical system 4, and each intermediate image is reduced to the wafer 5 by the reduced electron optical system 4. Aberrations that occur during projection are corrected in advance.
[0030]
The reduction electron optical system 4 is composed of a symmetric magnetic tablet including a first projection lens 41 (43) and a second projection lens 42 (44). When the focal length of the first projection lens 41 (43) is f1, and the focal length of the second projection lens 42 (44) is f2, the distance between the two lenses is f1 + f2. The object point on the optical axis AX is at the focal position of the first projection lens 41 (43), and the image point is connected to the focal point of the second projection lens 42 (44). This image is reduced to -f2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, the five aberrations of spherical aberration, isotropic astigmatism, isotropic coma aberration, field curvature aberration, and axial chromatic aberration are determined. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled out.
[0031]
A deflector 6 deflects a plurality of electron beams from the element electron optical system array 3 and displaces a plurality of light source images on the wafer 5 by substantially the same amount of displacement in the X and Y directions. Although not shown, the deflector 6 is composed of a main deflector used when the deflection width is wide and a sub-deflector used when the deflection width is narrow. The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector.
[0032]
7 is a dynamic focus coil that corrects the deviation of the focus position of the light source image due to the deflection aberration that occurs when the deflector 6 is operated, and 8 is the same as the dynamic focus coil 7, and the deflection aberration that occurs due to the deflection. This is a dynamic stig coil for correcting astigmatism.
[0033]
A reflected electron detector 9 detects reflected electrons or secondary electrons generated when the electron beam from the element electron optical system array 3 irradiates the alignment mark formed on the wafer 5.
[0034]
10 detects the charge amount of the light source image formed by the electron beam from the element electron optical system in a Faraday cup having two single knife edges extending in the X and Y directions.
[0035]
Reference numeral 11 denotes a θ-Z stage on which a wafer is placed and which can move in the optical axis AX (Z-axis) direction and the rotational direction around the Z-axis, and the Faraday cup 10 described above is fixed thereto.
[0036]
Reference numeral 12 denotes an XY stage on which a θ-Z stage is mounted and which can move in the XY directions orthogonal to the optical axis AX (Z axis).
[0037]
Next, the element electron optical system array 3 will be described with reference to FIG.
[0038]
In the element electron optical system array 3, a plurality of element electron optical systems are grouped (subarrays), and a plurality of subarrays are formed. In this embodiment, seven subarrays A to G are formed. In each subarray, a plurality of element electron optical systems are two-dimensionally arranged. In each subarray of this embodiment, 25 element electron optical systems are formed as D (1,1) to D (5,5), and each element electron optical system includes a reduction electron optical system 4. Thus, a light source image is formed on the wafer so as to be arranged at intervals of the pitch Pb (μm) in both the X direction and the Y direction.
[0039]
A sectional view of each element electron optical system is shown in FIG.
[0040]
In FIG. 4, AP-P is a substrate having an aperture (AP1) that defines the shape of an electron beam that is illuminated and transmitted by a condenser lens 2 in parallel, and is common to other element electron optical systems. is there. In each aperture (AP1) of each element electron optical system, the aperture area of each aperture is set so that the currents of the electron beams passing through the apertures substantially coincide. That is, the opening area of each opening is set so as to have a relationship inversely proportional to the current density per unit area for illuminating each opening. Thereby, even if each aperture (AP1) of each element electron optical system varies in intensity of the electron beam to illuminate, the current of the electron beam passing through each aperture substantially matches. Moreover, since each aperture (AP1) only defines the divergence angle of the electron beam forming the intermediate image, the sizes of the intermediate images substantially coincide with each other, and naturally each of the openings formed on the wafer. The sizes of the light source images also substantially coincide with each other.
[0041]
A blanking electrode 301 includes a pair of electrodes and has a deflection function, and 302 is a substrate having an opening (AP2) that is larger than the opening AP1, and is common to other element electron optical systems. On top of that, a blanking electrode 301 and a wiring (W) for electrode on / of are formed. 303 is composed of three aperture electrodes, and uses two unipotential lenses 303a and 303b having a convergence function in which the upper and lower electrodes are the same as the acceleration potential V0 and the intermediate electrode is maintained at another potential V1 or V2. It was an electron optical system. An aperture AP1 is disposed at the focal position on the front side (light source side) of the electron optical system 303.
[0042]
The shapes of the upper, middle and lower electrodes of the unipotential lens 303a and the upper and lower electrodes of the unipotential lens 303b are as shown in FIG. 5A. The upper and lower electrodes of the unipotential lenses 303a and 303b are A common potential is set in all element electron optical systems by a focus / astigmatism control circuit 1 described later.
[0043]
Since the potential of the intermediate electrode of the unipotential lens 303a can be set for each element electron optical system by the focus / astigmatism control circuit 1, the focal length of the unipotential lens 303a can be set for each element electron optical system.
[0044]
Further, the intermediate electrode of the unipotential lens 303b is composed of four electrodes as shown in FIG. 5B, and the potential of each electrode can be set individually by the focus / astigmatism control circuit, for each element electron optical system. Since the unipotential lens 303b can have different focal lengths in the orthogonal cross section, it can be set individually for each element electron optical system.
[0045]
As a result, the electron optical characteristics (intermediate image forming position, astigmatism) of the element electron optical system can be controlled by controlling the potential of the intermediate electrode of the element electron optical system.
[0046]
The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source by the electron optical system 303 through the aperture (AP1) and the blanking electrode 301. At this time, unless an electric field is applied between the blanking electrodes 301, the electron beam bundle 305 is not deflected. On the other hand, when an electric field is applied between the electrodes of the blanking electrode 301, it is deflected like an electron beam bundle 306. Then, since the electron beam 305 and the electron beam bundle 306 have different angular distributions on the object plane of the reduction electron optical system 4, the electron beam bundle 305 is at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system 4. And the electron beam bundle 306 are incident on different regions. Therefore, a blanking aperture BA for transmitting only the electron beam bundle 305 is provided at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system.
[0047]
In addition, each element electron optical system is arranged to correct the field curvature and astigmatism generated when the intermediate image formed by each element is reduced and projected onto the exposure surface by the reduction electron optical system 4. The electric potentials of the two intermediate electrodes of the optical system are individually set to make the electron optical characteristics (intermediate image forming position, astigmatism) of each element electron optical system different. However, in this embodiment, in order to reduce the wiring between the intermediate electrode and the focus / astigmatism control circuit 1, the element electron optical systems in the same sub-array have the same electron optical characteristics, and the electron optical characteristics of the element electron optical system. (Intermediate image forming position, astigmatism) is controlled for each sub-array.
[0048]
Furthermore, in order to correct distortion aberration that occurs when a plurality of intermediate images are reduced and projected on the exposure surface by the reduced electron optical system 4, in advance know the distortion characteristics of the reduced electron optical system 4, based on it, The position of each element electron optical system in the direction orthogonal to the optical axis of the reduced electron optical system 4 is set.
[0049]
Next, a system configuration diagram of this embodiment is shown in FIG.
[0050]
The intensity distribution control system 13 adjusts the electro-optical power (focal length) by changing the excitation current of at least two of the electron lenses 2a, 2b, 2c constituting the condenser lens 2, or the electron lens 2a, It is a control circuit for adjusting the position of the illumination electron optical system of the at least two electron lenses 2b and 2c in the optical axis direction by the drive system or both.
[0051]
The blanking control circuit 14 is a control circuit that individually controls on / off of the blanking electrode of each element electron optical system of the element electron optical array 3, and the focus / astigmatism control circuit 1 (15) is the element electron optical array. 3 is a control circuit that individually controls the electro-optical characteristics (intermediate image forming position, astigmatism) of each element electron optical system 3;
[0052]
The focus / astigmatism control circuit 2 (16) is a control circuit for controlling the focus position and astigmatism of the reduction electron optical system 4 by controlling the dynamic stig coil 8 and the dynamic focus coil 7, and the deflection control circuit 17 is for deflecting. The control circuit for controlling the device 6, the magnification adjustment circuit 18 is a control circuit for adjusting the magnification of the reduction electron optical system 4, and the optical characteristic circuit 19 is rotated by changing the excitation current of the electromagnetic lens constituting the reduction electron optical system 4 This is a control circuit for adjusting aberration and optical axis.
[0053]
The stage drive control circuit 20 is a control circuit that drives and controls the XY stage 12 in cooperation with a laser interferometer 21 that drives and controls the θ-Z stage and detects the position of the XY stage 12.
[0054]
The control system 22 controls the plurality of control circuits, the backscattered electron detector 9 and the Faraday cup 10 in synchronization for exposure and alignment based on data from the memory 23 in which information related to the drawing pattern is stored. The control system 22 is controlled by a CPU 25 that controls the entire electron beam exposure apparatus via an interface 24.
[0055]
[Description of operation]
The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG.
[0056]
Prior to wafer exposure by the exposure apparatus, when the CPU 25 instructs the control system 22 to “calibrate” via the interface 24, the control system 22 executes the following steps.
[0057]
(Step 1)
The control system 22 sets the position in the optical axis direction of the intermediate image formed by each element electron optical system of the element electron optical system array 3 to a predetermined position via the focus / astigmatism control circuit 1 (15). Thus, the potential of the intermediate electrode of each element electron optical system is set.
[0058]
Then, the control system 22 selects one of the element electron optical systems and controls the blanking control circuit 14 so that only the electron beam from the element electron optical system irradiates the wafer side. A blanking electrode other than the electron optical system is operated (blanking on). At the same time, the XY stage 12 is driven by the stage drive control circuit 20, the Faraday cup 10 is moved in the vicinity of the light source image formed by the electron beam from the selected element electron optical system, and the electrons from the selected element electron optical system are moved. The light source image formed by the beam is detected by the Faraday cup 10, and the irradiated current is detected.
[0059]
(Step 2)
The control system 22 sequentially measures the current irradiated from the other element electron optical systems of the element electron optical system array 3 in the same manner as in Step 1, and stores the irradiation current for each element electron optical system. (However, at this time, the aperture area of each aperture of each element electron optical system is the same or known in advance.)
[0060]
(Step 3)
The control system 22 determines the aperture area of each aperture so that the current of the electron beam passing through the aperture of each element electron optical system substantially matches based on the detection result of the current irradiated from each element electron optical system stored. Information on the substrate AP-P having an aperture area of each aperture such that the currents of the electron beams passing through the apertures of each element electron optical system substantially coincide with each other, or such a substrate AP- By informing the operator of P, the operator exchanges the corresponding substrate AP-P.
[0061]
(Step 4)
Next, the control system 22 repeats the above steps 1 and 2 again. Newly, the intensity distribution of the electron beam actually illuminated on the element electron optical system array 3 is obtained based on the detection result of the current irradiated from all the stored element electron optical systems. Then, based on the obtained intensity distribution, the intensity distribution control system 13 is commanded so that the irradiation current of each element electron optical system becomes uniform, and at least two of the electron lenses 2a, 2b, 2c constituting the condenser lens 2 are ordered. The optical power of one electron lens is adjusted, or the positions of at least two of the electron lenses 2a, 2b, and 2c in the optical axis direction of the illumination electron optical system are adjusted, or both are adjusted.
[0062]
In this embodiment, the irradiation currents from all the element electron optical systems were measured, but in order to shorten the measurement time, the illumination area on the element electron optical array 3 was divided into a plurality of small areas, for example, representative of the small areas. As shown in FIG. 3, the element electron optical systems B (3,3), C (3,3), E (3,3), F (3,3), G (3,3) of the element electron optical system array 3 shown in FIG. ) May be detected to obtain the intensity distribution of the electron beam illuminated on the element electron optical system array 3.
[0063]
Next, when the CPU 25 instructs the control system 22 to “execute exposure” via the interface 24, the control system 22 executes the following steps.
[0064]
(Step 11)
The control system 22 instructs the deflection control circuit 17 to deflect a plurality of electron beams from the element electron optical system array by the sub deflector of the deflector 6, and also commands the blanking control circuit 14 to block each element electron optical system. The ranking electrode is turned on / off according to the pattern to be exposed on the wafer 5. At this time, the XY stage 12 continuously moves in the X direction, and the deflection control circuit 17 controls the deflection position of the electron beam including the amount of movement of the XY stage 12.
[0065]
As a result, the electron beam from one element electron optical system scans and exposes the exposure field (EF) on the wafer 5 starting from the black square as shown in FIG. As shown in FIG. 8, the exposure fields (EF) of the plurality of element electron optical systems in the subarray are set so as to be adjacent to each other. As a result, a plurality of exposure areas (EF) are formed on the wafer 5. A sub-array exposure field (SEF) comprising: At the same time, a subfield composed of subarray exposure fields (SEF) formed by each of the subarrays A to G as shown in FIG. 9 is exposed on the wafer 5.
[0066]
(Step 12)
The control system 22 instructs the deflection control circuit 17 to expose the subfield (2) after the exposure of the subfield (1) shown in FIG. Multiple electron beams from the deflected. Then, the operation of Step 1 is performed to expose the subfield (2).
[0067]
The above steps 11 and 12 are repeated to expose the entire surface of the wafer by sequentially exposing the subfields as shown in FIG. 10 as subfields (3) and (4).
[0068]
Next, an embodiment of a device production method using the electron beam exposure apparatus described above will be described.
[0069]
FIG. 11 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 101 (circuit design), a semiconductor device circuit is designed. In step 102 (exposure control data creation), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 103 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 104 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 105 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including. In step 106 (inspection), the semiconductor device manufactured in step 105 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 107).
[0070]
FIG. 12 shows a detailed flow of the wafer process. In step 111 (oxidation), the wafer surface is oxidized. In step 112 (CVD), an insulating film is formed on the wafer surface. In step 113 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 114 (ion implantation), ions are implanted into the wafer. In step 115 (resist process), a photosensitive agent is applied to the wafer. In step 116 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 117 (development), the exposed wafer is developed. In step 118 (etching), portions other than the developed resist image are removed. In step 119 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0071]
By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device that has been difficult to manufacture at low cost.
[0072]
【The invention's effect】
As described above, according to the present invention, in a multi-electron beam exposure apparatus that illuminates a substrate having a plurality of openings with an electron beam and exposes a sample surface with a plurality of electron beams from the plurality of openings, It is possible to provide a multi-electron beam type exposure apparatus that can perform exposure with a plurality of electron beams that are substantially the same in size.
[Brief description of the drawings]
FIG. 1 is a schematic view showing the main part of an electron beam exposure apparatus according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating an intensity distribution adjustment function of a condenser lens.
FIG. 3 is a diagram for explaining an element electron optical system array 3;
FIG. 4 is a diagram illustrating an element electron optical system.
FIG. 5 is a diagram illustrating an electrode of an element electron optical system.
FIG. 6 is a diagram illustrating a system configuration according to the present invention.
FIG. 7 is a view for explaining an exposure field (EF).
FIG. 8 is a view for explaining a subarray exposure field (SEF).
FIG. 9 is a diagram for explaining a subfield.
FIG. 10 is a view for explaining wafer scanning exposure.
FIG. 11 illustrates a manufacturing flow of a microdevice.
FIG. 12 is a diagram illustrating a wafer process.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Electron gun 2 Condenser lens 3 Element electron optical system array 4 Reduction electron optical system 5 Wafer 6 Deflector 7 Dynamic focus coil 8 Dynamic stig coil 9 Reflected electron detector 10 Faraday cup 11 θ-Z stage 12 XY stage 13 Intensity distribution control System 14 Blanking control circuit 15 Focus / astigmatism control circuit 1
16 Focus / astigmatism control circuit 2
17 Deflection control circuit 18 Magnification adjustment circuit 19 Optical characteristic circuit 20 Stage drive control circuit 21 Laser interferometer 22 Control system 23 Memory 24 Interface 25 CPU
AP-P substrate with opening

Claims (3)

In an electron beam exposure apparatus that illuminates a first object having a plurality of openings using a light source that emits an electron beam, and exposes the second object with an electron beam from the first object,
An illumination electron optical system having a plurality of electron lenses and means for obtaining information on an intensity distribution of an electron beam applied to the first object, and irradiating the first object with an electron beam from the light source;
An electron optical system that forms an intermediate image of the light source from each of the electron beams that pass through each of the plurality of openings of the first object;
A reduction electron optical system that projects the plurality of intermediate images onto the second object;
The plurality of openings of the first object has an opening area of each opening set so that the currents of electron beams passing through the openings of the plurality of openings substantially match based on the information,
The illumination electron optical system is configured so that each aperture of the plurality of apertures of the first object is obtained based on information on the intensity distribution of the electron beam applied to the first object obtained after setting the aperture area of each aperture. An electron beam exposure apparatus comprising: means for adjusting electron optical characteristics of at least two electron lenses of the plurality of electron lenses so that currents of electron beams passing through the plurality of electron lenses substantially coincide with each other. An illumination electron optical system having a plurality of electron lenses illuminates a first object having a plurality of apertures with an electron beam from a light source, and the electron optical system transmits an electron beam passing through each of the plurality of apertures of the first object. In each of the electron beam exposure methods, an intermediate image of the light source is formed from each, and the plurality of intermediate images are projected onto a second object by a reduction electron optical system.
A first step of obtaining information on an intensity distribution of an electron beam applied to the first object;
A second stage in which an opening area of each opening is set so that currents of electron beams passing through the openings of the plurality of openings are substantially matched based on the information of the first stage;
After the second stage, information on the intensity distribution of the electron beam irradiating the first object is obtained, and the currents of the electron beams passing through the openings of the plurality of openings of the first object substantially match based on the information. And a third step of adjusting electro-optical characteristics of at least two electron lenses of the plurality of electron lenses.   A device manufacturing method, wherein a device is manufactured using the electron beam exposure method according to claim 2.

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