JP3845647B2 - Heat treatment equipment - Google Patents

Description

  The present invention relates to a heat treatment apparatus for heat-treating a substrate.

  In the photoresist processing process in the manufacture of semiconductor devices, heat treatment (pre-baking) after applying a resist solution to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), or heat treatment after pattern exposure ( Various heat treatments such as post-exposure baking are performed.

  These heat treatments are usually performed by a heat treatment apparatus. This heat treatment apparatus has a thick disc-shaped hot plate made of aluminum in a processing vessel, and a wafer to be processed is placed on the hot plate and is incorporated in the hot plate. The wafer was heated by heating the hot plate to a predetermined temperature with a heating element.

  By the way, since the heating temperature differs depending on the type of semiconductor device to be formed, the type of resist solution, the type of process, etc., it is necessary to change the hot plate temperature. At this time, it is preferable to raise and lower the temperature of the hot plate at a high speed in order to improve the wafer manufacturing throughput.

  However, when the temperature of the hot plate is raised, heat escapes from the outer edge of the hot plate or below the hot plate, and when the temperature of the hot plate is lowered, the heat is stored in the heat treatment apparatus, Since the replacement was not performed smoothly, it took a long time to raise and lower the heating plate.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a heat treatment apparatus capable of raising and lowering the hot plate temperature at a higher speed than conventional heat treatment apparatuses, and to solve the above problems. It is said.

  According to the present invention, there is provided a hot plate that heats the substrate, and a space portion that is formed below the hot plate and that is openable and closable at a part of the position facing the lower surface of the hot plate. During the heat treatment, the space is closed, and when the hot plate is cooled, the space is opened. In this heat treatment apparatus, for example, when the hot plate is heated, the space portion is closed and kept warm, and when the hot plate is cooled, the space portion can be opened to release the heat. Compared to this, the hot plate can be raised and lowered at a higher speed.

  The heat treatment apparatus further includes a support member that supports at least a peripheral portion of the hot plate, a material of the support member is a heat insulating material, the support member is in close contact with the hot plate, You may have a structure which supports the perimeter. In this way, by using a heat insulating material as the material of the support member, it is possible to suppress the heat stored in the hot plate from radiating from the outer edge of the hot plate, so that the hot plate can be heated at high speed and heated. During processing, the temperature inside the hot plate is kept uniform. In addition, since the support member is brought into close contact with the hot plate and the entire periphery of the hot plate is supported, radiation of the hot plate is further suppressed, so that the hot plate can be heated at high speed and the hot plate surface can be heated. The uniformity of the temperature inside is improved.

  The heat treatment apparatus may include an exhaust pipe that exhausts the atmosphere of the space portion. In such a case, when heating, the space is closed and kept warm, and when cooling the hot plate, the atmosphere in the space is positively exhausted from the exhaust pipe to raise and lower the hot plate at a higher speed. Can be warmed.

  The said heat processing apparatus may have a gas supply means which blows the gas for cooling with respect to the lower surface of the said hot platen. In this case, by blowing a cooling gas to the lower surface of the hot plate, the heat stored in the hot plate is rapidly taken away by the gas when the hot plate is cooled. It can be cooled at high speed. For example, dry air is suitable as the cooling gas, but general inert gas or other normal air may be used.

  The material of the hot plate may be aluminum nitride. In such a case, the thermal conductivity of the hot plate increases, and the hot plate can be raised and lowered at a higher speed than before. In addition, aluminum nitride is superior in strength to conventionally used aluminum, so that the heat plate can be made thin, so that the response to heat is increased and the temperature can be raised and lowered at high speed.

  A heating element for heating the hot plate may be printed on the lower surface of the hot plate. In such a case, by directly printing a heating element as a heat source on the lower surface of the hot plate, there is no need to incorporate a copper plate wound with, for example, a heating wire into the hot plate as in the prior art, so the hot plate is kept thin. Can be made compact.

  As a reference example for achieving the above object, the substrate is heat-treated using a heat treatment apparatus having a hot plate for heating the substrate and a space part formed below the hot plate and partially openable and closable. In this regard, it is possible to propose a heat treatment method in which the space portion is closed at least during the heat treatment of the substrate and the space portion is opened when the hot plate is cooled.

  According to this heat treatment method, during the processing of the substrate, the space can be closed and kept warm, and the substrate can be heated at a predetermined temperature. In particular, when the temperature of the hot plate is raised, the heat release from the hot plate is suppressed, so that the temperature can be raised at a higher speed than before. Further, when the hot plate is cooled, the temperature can be lowered at a higher speed than in the prior art by opening the space.

  As a reference example from another viewpoint, a hot plate for heating a substrate, a space part formed below the hot plate and partially openable and closable, and a gas supply for blowing a cooling gas to the back of the hot plate In the heat treatment of the substrate using a heat treatment apparatus having means, the space is closed at least during the heat treatment of the substrate, and the space is opened during the cooling of the hot plate, and the gas A heat treatment method can be proposed in which a cooling gas is blown from the supply means to the back surface of the hot plate.

  According to this heat treatment method, during the processing of the substrate, the space can be closed and kept warm, and the substrate can be heated at a predetermined temperature. In particular, when the temperature of the hot plate is raised, the heat release from the hot plate is suppressed, so that the temperature can be raised at a higher speed than before. When cooling the hot plate, the space can be opened and a cooling gas can be blown onto the back side of the hot plate, so that the temperature can be lowered faster than in the prior art.

  In a heat treatment method of a reference example according to still another aspect, a hot plate for heating a substrate, a space formed below the hot plate, an exhaust pipe for exhausting the atmosphere of the space, and the back surface of the hot plate When the substrate is heat-treated using a heat treatment apparatus having a gas supply means for blowing a cooling gas against the substrate, the space is closed at least during the heat treatment of the substrate, and the heat plate is cooled. In some cases, exhaust gas is exhausted from the exhaust pipe, and cooling gas is blown from the gas supply means to the back surface of the hot plate.

According to this heat treatment method, the space can be closed and kept warm, the substrate can be heated at a predetermined temperature, and when the temperature of the hot plate is raised, heat dissipation from the hot plate is suppressed. As a result, the temperature can be increased faster than before. When the hot plate is cooled, the atmosphere in the space is positively exhausted from the exhaust pipe, and a cooling gas is blown to the back of the hot plate, so the temperature of the hot plate is further lowered than before. In addition, particles can also be sucked directly from the exhaust pipe and exhausted, so that the space is not contaminated.
Furthermore, as a reference example of a heat treatment apparatus that achieves the above object, in the heat treatment apparatus for heating a substrate on a hot plate, the heat treatment device has a support member that supports at least a peripheral portion of the hot plate, A heat treatment apparatus in which the material of the support member is a heat insulating material can be proposed.
Further, as a reference example according to another aspect, a heat treatment apparatus for heat-treating a substrate, a hot plate for heating the substrate, a plurality of nozzles for blowing a cooling gas toward the back surface of the hot plate, It is possible to propose a heat treatment apparatus that includes a temperature sensor for measuring the temperature of the hot plate and in which the position of the nozzle is set so as not to overlap the position of the temperature sensor when viewed from above.
The plurality of nozzles may be arranged concentrically, or may be arranged on two concentric circumferences. The material of the hot plate may be aluminum nitride, and the thickness of the hot plate may be 3 mm. Further, the temperature sensor may be arranged on two orthogonal diameters on the hot plate.

  According to the present invention, it is possible to suppress the heat stored in the hot plate from radiating from the outer edge portion of the hot plate, so that the temperature of the hot plate can be increased faster than before. Therefore, changing the setting to a different temperature takes less time than before and contributes to an improvement in throughput. In addition, since the uniformity of the temperature in the hot plate surface is improved, the yield can be improved.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view of a coating and developing treatment system 1 including a post-exposure baking apparatus as a heat treatment apparatus according to the present embodiment, FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. FIG. 2 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in units of cassettes and carries the wafers W in and out of the cassettes C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a sheet-fed process in the coating and developing processing step are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.

  In the cassette station 2, a plurality of cassettes C can be placed in a line in a X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placement table 5 serving as a placement portion. The wafer transfer body 7 that can be transferred in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette C is movable along the transfer path 8. It is provided so that each cassette C can be selectively accessed.

  As will be described later, the wafer carrier 7 is configured to be accessible also to the alignment device 32 and the extension device 33 belonging to the third processing device group G3 on the processing station 3 side.

  The processing station 3 is provided with a main transfer device 13 at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In the coating and developing processing system 1, four processing device groups G1, G2, G3, and G4 are arranged. The first and second processing device groups G1 and G2 are arranged on the front side of the developing processing system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side.

  In the first processing unit group G1, as shown in FIG. 2, two types of spinner type processing units, for example, a resist coating unit 15 that coats and processes a resist on the wafer W, and a developer is supplied to the wafer W. The developing processing devices 16 for processing are arranged in two stages in order from the bottom. Similarly, in the case of the second processing unit group G2, the resist coating unit 17 and the development processing unit 18 are stacked in two stages in order from the bottom.

  In the third processing unit group G3, as shown in FIG. 3, the cooling unit 30 for cooling the wafer W, the adhesion unit 31 for improving the fixability between the resist solution and the wafer W, and the alignment of the wafer W are performed. An alignment device 32, an extension device 33 for waiting the wafer W, pre-baking devices 34 and 35 for drying a thinner solvent after applying a resist solution, and post-baking devices 36 and 37 for performing a heat treatment after development processing are sequentially arranged from the bottom, for example. It is stacked in 8 steps.

  In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 that naturally cools the mounted wafer W, an extension unit 42, a cooling unit 43, and a heating process after exposure processing are performed. Such post-exposure baking devices 44 and 45, post-baking devices 46 and 47, and the like are stacked in, for example, eight stages in order from the bottom.

  Next, a wafer carrier 50 is provided at the center of the interface unit 4. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1) and Z direction (vertical direction) and rotated in the θ direction (rotating direction around the Z axis). , The extension / cooling device 41, the extension device 42, the peripheral exposure device 51, and the exposure device (not shown) belonging to the fourth processing unit group G4.

  Next, the post-exposure baking apparatus 44 as the heat treatment apparatus will be described in detail. As shown in FIG. 4, the post-exposure baking apparatus 41 is disposed in the casing 61 so as to be integrated with the lid 62 that is located on the upper side and freely movable up and down and on the lower side. It consists of a hot plate accommodating part 63 forming the chamber S.

  The lid 62 has a substantially conical shape that gradually increases toward the center, and an exhaust part 62a is provided at the top, so that the atmosphere in the processing part S is uniformly distributed from the exhaust part 62a. It is designed to be exhausted.

  The hot plate accommodating portion 63 supports a substantially cylindrical case 64 on the outer periphery, a disk-like hot plate 70 disposed in the case 64, and the entire periphery of the hot plate 70, and is made of polyimide or fluorine having good heat insulation properties. A support 65 is provided as a support member made of a synthetic resin such as PBI (polypentaimidazole) or PTFE (polytetrafluorethylene).

  The support 65 is configured in a ring shape so as to be in close contact with the entire peripheral portion of the hot plate 70. Furthermore, since the fluorine-type synthetic resin which is a heat insulating material is used, it is suppressed that the heat | fever of the hot plate 70 heat-radiates from a hot plate peripheral part during heat processing. Therefore, since the temperature in the surface of the hot plate 70 is kept uniform, the wafer W placed on the hot plate 70 is heated uniformly. The support 65 is supported by a cylindrical support base 67. Further, as shown in FIG. 5, the support 65 is provided with a blowing port 66, and for example, air or inert gas can be blown out into the processing chamber S.

  The hot plate 70 is made of aluminum nitride excellent in thermal conductivity and strength so that the hot plate can be raised and lowered at high speed and the hot plate can be thinned, and its thickness is thinner than the conventional one, for example, 3 mm.

  On the back surface of the heat plate 70, for example, a heater made of a copper wire wound with a heating wire is not incorporated as a heat source, but a silver heater 71 that generates heat by power feeding is printed concentrically, for example. . Therefore, the heater 71 has almost no thickness, and is as thin as about 3 mm even when combined with the hot plate 70.

  A perforated bottom plate 73 in which a large number of ventilation portions 72 are formed is attached to the lower side of the hot plate 70, for example, like punching metal, and is surrounded by the bottom plate 73, the hot plate 70 and the support 65. A space T is formed.

  On the bottom plate 73, nozzles 74 for blowing, for example, a cooling gas, for example, room temperature air in the vertical direction toward the back surface of the hot plate 70 are provided, for example, at eight locations. Of course, the number of nozzles may be arbitrary or plural. As shown in FIG. 5, four nozzles 74 are arranged concentrically, as shown in FIG. 5, and a temperature sensor 75 for measuring the temperature of the hot plate 70 (shown by x in FIG. 5) is viewed from the plane. It is set so that it does not overlap with the position. Each nozzle 74 communicates with an air supply pipe 76 so that when air is supplied from outside the casing 61, air of the same wind speed is blown from the nozzle 74 toward the back surface of the hot plate 70. It has become.

  The hot plate 70 is formed with three holes 82 through which three lifting pins 81 for raising and lowering the wafer W protrude from the hot plate 70. Between each of the holes 82 and the bottom plate 73, cylindrical guides 83 are arranged vertically so as to cover the outer periphery of the elevating pins 81 and isolate the atmosphere from the nozzles 74. The vertical movement of the elevating pins 81 is not hindered by various codes or the like wired under the hot plate 70 by these guides 83, and the air blown from the nozzles 74 is discharged toward the wafer W from the holes 82. Can be prevented. The lift pins 81 can be moved up and down by an appropriate drive device 84 such as a motor.

  An appropriate exhaust port 64 a is formed around the lower portion of the case 64, and an appropriate exhaust port 61 a is also formed on the lower side of the casing 61 of the post-exposure baking device 44. An exhaust pipe 85 is connected to an exhaust section (not shown) that concentrates exhaust from other processing apparatuses of the coating and developing processing system 1 described above.

  Next, the operation of the post-exposure baking apparatus 44 as the heat processing apparatus configured as described above will be described together with the process of coating and developing the wafer W performed in the coating and developing processing system 1.

  First, the wafer carrier 7 picks up one unprocessed wafer W from the cassette C and carries it into the alignment device 32 belonging to the third processing unit group G3. Next, the wafer W that has been aligned by the alignment device 32 is sequentially transferred by the main transfer device 13 to the adhesion device 31, the cooling device 30, the resist coating device 15 or 17, and the pre-baking device 33 or 34. Processing is performed. Thereafter, the wafer W is transferred to the extension / cooling apparatus 41.

  Next, the wafer W is taken out from the extension / cooling device 41 by the wafer carrier 50 and then transferred to the exposure device (not shown) via the peripheral exposure device 51. After the exposure processing, the wafer W is transferred to the extension device 42 by the wafer transfer body 50 and then held by the main transfer device 13. Next, the wafer W is transferred to the post-exposure baking apparatus 44 or 45.

  Next, the operation of the wafer W in the post-exposure baking apparatus 44 will be described in detail.

  First, the pre-processed wafer W is loaded into the post-exposure baking apparatus 44 by the wafer carrier 50 and transferred to the lift pins 81 that have been lifted and waited in advance. Then, as the elevating pins 81 are lowered, the wafer W is lowered and placed on the hot platen 70. At this time, for example, the wafer W is heated to 140 ° C. by heating the heater 71. Further, during the heat treatment, the solvent generated from the wafer surface is exhausted from the exhaust port 62a. When heating for a predetermined time is completed, the elevating pins 81 are raised again to support the wafer, are transferred to the main transfer device 13 and are carried out of the post-exposure baking device 44.

  By the way, the temperature of post-exposure baking after exposure varies depending on the process and the type of resist. Therefore, not only heating at 140 ° C. as described above, but also heating at a lower temperature, for example, 90 ° C. may occur. In this case, it is necessary to quickly cool the hot plate 70 and prepare for heating at 90 ° C. However, the post-exposure baking apparatus 44 according to the present embodiment suitably copes with such temperature drop of the hot plate. it can.

  That is, after the heat treatment of the last wafer W of the lot to be heat-treated at 140 ° C. is completed, air at normal temperature is blown from the nozzle 74 to the back surface of the hot plate 70 as shown in FIG.

  Then, since the hot plate 70 is made of aluminum nitride having excellent thermal conductivity and is thinly formed, the hot plate 70 is cooled at high speed by air at normal temperature blown from the back surface.

  On the other hand, the wafer W may be heated at 280 ° C. by a recipe. In this case, it is necessary to quickly heat the hot plate 70 to prepare for heating at 280 ° C. However, as described above, the hot plate 70 having excellent thermal conductivity is used, and the hot plate 70 has good heat insulation. Since it is supported by the support 65, the heater 71 printed on the lower surface of the hot plate 70 can raise the temperature faster than in the prior art.

  According to the above embodiment, during the heat treatment of the post-exposure baking apparatus 44, the heat plate 70 is supported by the support 65 made of a heat insulating material, so that the heat radiation of the heat plate 70 can be suppressed. The heating rate of the hot plate 70 is improved, and the temperature in the hot plate 70 is kept uniform, so that the wafer W is heated uniformly.

  Further, since the heat plate 70 is formed thinner than the conventional one, and the material is aluminum nitride having excellent heat conductivity, the responsiveness of the heat plate 70 is increased and the temperature can be raised and lowered at high speed. Further, since the hot plate 70 is thinned, the entire post-exposure baking apparatus 44 can be made compact.

  The ventilation portion 72 of the bottom plate 73 that forms the space T below the hot plate 70 described above was always open. However, the ventilation portion 72 can be opened and closed by attaching an appropriate lid, for example, and the space T is closed. You may comprise so that it can do. In this way, by allowing the space T to be opened and closed, when the wafer W is heat-treated, the vent 72 can be closed and the space T can be kept warm, so that the wafer W can be kept at a predetermined temperature. Heat treatment can be performed stably. Further, when the temperature of the hot plate 70 is raised, the ventilation portion 72 can be closed and the heat radiation from the space T can be prevented, so that the temperature can be raised faster. On the other hand, when the hot plate 70 is cooled, the heat can be quickly released by opening the space T.

  In order to realize such an action, for example, as shown in FIG. 7, a ventilation portion 90 is provided in the peripheral portion of the bottom plate 73 forming the space T under the hot plate 70, as shown in FIG. A relief valve 91 is attached. The relief valve 91 has a lid portion 92 that can open and close the ventilation portion 90, and is rotatable about a rotation portion 93. The lid 92 is normally urged to close the ventilation portion 90 by a biasing member (not shown) such as a spring.

  According to the relief valve 91 having such a configuration, when a pressure is applied from above, that is, from the space T, the ventilation portion 90 is opened against the biasing of the biasing member. That is, when cooling gas is ejected from the nozzle 74 when the temperature of the hot plate 70 is lowered, the internal pressure of the space T increases, so that the lid 92 is opened and heat is generated as the gas flows out. Released. Further, when the temperature of the hot plate 70 is raised and during the heat treatment of the wafer W, the outflow of gas from the nozzle 74 stops, so that the lid portion 92 closes the ventilation portion 90 by urging, and the space portion. The heat of the hot plate 70 is prevented from escaping through T. As a result, the temperature rise and fall of the hot plate 70 is promoted, and the hot plate 70 can be raised and lowered at a higher speed. Needless to say, the relief valve that realizes such an action is not limited to the structure of the relief valve 91 described above.

  Next, another embodiment will be described. The example shown in FIG. 9 is a post-exposure baking apparatus 102 having an exhaust pipe 101 that discharges the atmosphere in the space T below the hot plate 70 to the outside. In this post-exposure baking apparatus 101, the members and structures indicated by the same reference numerals as those of the post-exposure baking apparatus 44 shown in FIG. Yes.

  In the post-exposure baking apparatus 102, the space T below the hot plate 70 is a closed space. When air is blown out from the nozzle 74 and the hot plate 70 is rapidly cooled, the atmosphere in the space T is discharged to the outside from the exhaust pipe 101. As a result, it is possible to prevent particles and the like from rising in the space T and contaminating the surroundings. Further, the hot plate 70 can be cooled at a higher speed.

  When the wafer W is placed on the hot plate 70 and heated, the exhaust pipe 101 is closed. As a result, the atmosphere in the space T does not leak to the outside, so that the space T is in a state of keeping heat, so that the heating efficiency for the hot plate 70 is improved.

  In addition, each of the above embodiments has been embodied as a heat treatment apparatus that performs post-exposure baking, but of course, other heat treatment apparatuses such as a pre-baking apparatus may be used. Furthermore, although the substrate is the wafer W, it is of course applicable to other rectangular heat treatment apparatuses such as LCD substrates.

  According to the present invention, it is possible to suppress the heat stored in the hot plate from radiating from the outer edge portion of the hot plate, so that the temperature of the hot plate can be increased faster than before. Therefore, changing the setting to a different temperature takes less time than before and contributes to an improvement in throughput. In addition, since the uniformity of the temperature in the hot plate surface is improved, the yield can be improved.

  According to the present invention, the support member that supports the hot plate is brought into close contact with the hot plate and the entire periphery of the hot plate is supported. it can. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to improved throughput. In addition, since the uniformity of the temperature in the hot plate surface is improved, the yield can be improved.

  According to the present invention, when the hot plate is heated, the space formed below the hot plate is closed and kept warm, and when the hot plate is cooled, the space is opened or exhausted from the exhaust pipe. Since heat can be released, the temperature of the hot plate can be raised and lowered faster than in the past. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to improved throughput.

  According to the present invention, when the hot plate is cooled, the heat stored in the hot plate is rapidly taken away by the gas, so that the hot plate can be cooled at a higher speed than before. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to an improvement in throughput.

  By using aluminum nitride as the material of the hot plate, the thermal conductivity is increased, and the hot plate can be raised and lowered faster than before. Therefore, it takes less time to change the setting to a different temperature than before, and throughput can be improved. In addition, aluminum nitride is superior in strength to aluminum that has been used in the past, so the heat plate can be made thinner, which increases the responsiveness to heat and also improves the throughput. Figured.

  According to the present invention, it is possible to keep the heat plate thinner than in the prior art by directly printing the heating element as a heat source on the heat plate. Therefore, the hot plate can be moved up and down at high speed to improve the throughput and make it compact.

  According to the present invention, during the processing of the substrate, the space formed below the hot plate can be closed and kept warm, and the substrate can be heated at a predetermined temperature. Further, when the temperature of the hot plate is raised, the heat release from the hot plate is suppressed, so that the temperature can be raised faster than before. On the other hand, even when the hot plate is cooled, the temperature can be lowered at a higher speed than in the prior art by opening the space. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to improved throughput.

  According to the present invention, during the processing of the substrate, the space formed below the hot plate can be closed and kept warm, and the substrate can be heated at a predetermined temperature. In particular, when the temperature of the hot plate is raised, the heat release from the hot plate is suppressed, so that the temperature can be raised faster than before. Further, when the hot plate is cooled, the temperature can be lowered at a higher speed than in the prior art by opening the space and blowing a cooling gas onto the back surface of the hot plate. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to improved throughput.

  According to the present invention, the space formed under the hot plate is closed and kept warm during the treatment, so that the heating rate is improved, and when the hot plate is cooled, the exhaust pipe is actively used. Since the atmosphere in the space is exhausted, the temperature can be lowered faster than in the past. Therefore, it takes less time to change the setting to a different temperature than before, which contributes to improved throughput. In addition, particles can be prevented from flying and the floating particles can be exhausted directly, so the space can be kept clean.

It is a top view which shows the external appearance of the coating and developing processing system provided with the post-exposure baking apparatus concerning this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section of the post-exposure baking apparatus concerning this Embodiment. It is explanatory drawing from the plane of the post-exposure baking apparatus concerning this Embodiment. It is explanatory drawing from the side surface which shows the state which is blowing the gas on the back surface of the hot platen in the post-exposure baking apparatus concerning embodiment. It is explanatory drawing of the longitudinal cross-section of the post-exposure baking apparatus at the time of providing a ventilation part in the peripheral part of the baseplate below a heat plate. FIG. 8 is an enlarged explanatory diagram when a lid is attached to a vent portion of a bottom plate below a hot plate in the post-exposure baking apparatus of FIG. 7. It is explanatory drawing of the longitudinal cross-section of other embodiment which provided the exhaust pipe in the post-exposure baking apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Application | coating development system 65 Support 70 Heat plate 71 Heater 72,90 Ventilation hole 73 Bottom plate 74 Nozzle 91 Relief valve S Processing chamber T Space W

Claims (6)

A hot plate for heating the substrate;
A space part that is formed below the hot plate and that is openable and closable at a part of the position facing the lower surface of the hot plate;
At least during the heat treatment of the substrate, the space is closed,
The heat treatment apparatus, wherein the space is opened when the hot plate is cooled. A support member for supporting at least the peripheral edge of the hot plate;
The material of the support member is a heat insulating material;
The heat treatment apparatus according to claim 1, wherein the support member is in close contact with the hot plate and has a structure that supports the entire periphery of the hot plate. The heat treatment apparatus according to claim 1, further comprising an exhaust pipe that exhausts the atmosphere of the space portion. The heat treatment apparatus according to claim 1, further comprising a gas supply unit that blows a cooling gas onto a lower surface of the hot plate. The heat treatment apparatus according to claim 1, wherein a material of the hot plate is aluminum nitride. 6. A heat treatment apparatus according to claim 1, wherein a heating element for heating the hot plate is printed on a lower surface of the hot plate.

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