JP3704229B2 - Method and apparatus for manufacturing semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device having a connection structure for electrically connecting an electrode of a semiconductor chip and an electrode such as a printed circuit board and a method for manufacturing the same.
[0002]
[Prior art]
Conventionally, wafer bumps, stud bumps, transfer bumps, and the like are known as bumps that serve as bonding media between electrodes of a semiconductor chip and external circuits. In recent years, with the increase in the density of semiconductor devices, the pitch of electrodes or the size of bumps has been reduced. A bump forming method is being put into practical use in which fine metal balls on which bumps are to be formed are arranged in advance on the same coordinates as the electrodes of a semiconductor chip and are collectively bonded onto the electrodes.
[0003]
[Problems to be solved by the invention]
In the above-described so-called ball bump, or also in the case of plating or the like, the bump height is limited, and as a result, the cost must be increased. Further, due to the difference in thermal expansion coefficient between the semiconductor chip side and the substrate side, destruction may occur in extreme cases due to thermal stress during bump reflow or the like.
[0004]
Furthermore, when packaging a semiconductor chip, even if a predetermined resin is poured into the resin mold, a sufficient amount of resin cannot be poured into a narrow gap between the semiconductor chip and the substrate. For this reason, the resin mold cannot always provide sufficient protection, and it has been difficult to secure a high adhesive strength enough to withstand thermal expansion.
[0005]
In view of such circumstances, an object of the present invention is to provide a method and apparatus for manufacturing a semiconductor device that has excellent durability and ensures reliable electrical connection.
[0006]
[Means for Solving the Problems]
The method of manufacturing a semiconductor device of the present invention, microscopic gold in the manufacturing method of the semiconductor device, each of the one electrode and the other electrode having a connection structure for electrically connecting one of the chip electrode and the other substrate or chip electrodes The chip electrode and the substrate or chip electrode are bonded by bonding balls (excluding balls by wire ball bonding) and reflowing the micro gold balls bonded to both electrodes by reflowing the low melting point micro balls. Are electrically connected.
[0007]
In the method for manufacturing a semiconductor device of the present invention, when bonding the microscopic gold ball to one electrode or the other electrode, the microscopic gold balls are arranged and held in a position corresponding to the electrodes, microscopic gold that this arrangement holds A ball is transferred and bonded to each electrode.
In the method of manufacturing a semiconductor device according to the present invention, when the fine gold balls are arranged and held, the fine gold balls are attracted.
In the method of manufacturing a semiconductor device according to the present invention, when the fine gold balls are arranged and held, the extra fine gold balls are removed by applying fine vibration.
[0008]
Further, the semiconductor device of the present invention is a semiconductor device in which one chip electrode and the other substrate or chip electrode are electrically connected, and each of the one electrode and the other electrode has a fine gold ball (wire ball bonding method). bonding the exception of the ball) by, by joining to each other the microscopic gold ball which is bonded to the electrodes by reflowing the low-melting minute balls, the substrate or between the tip electrode through these microscopic gold ball The chip electrode is electrically connected.
[0009]
According to the present invention, when electrically connecting the chip electrode and the substrate or chip electrodes, by joining the different species of minute metallic balls 2 or more between the electrodes, while securing long electrode spacing junction can do. By increasing the bonding distance in this manner, the semiconductor chip has an excellent effect in protecting the semiconductor chip by providing high relaxation absorbability against thermal stress based on the difference in thermal expansion coefficient. High durability against fatigue failure and high adhesive strength against thermal expansion can be ensured.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of a method and apparatus for manufacturing a semiconductor device according to the present invention will be described below with reference to the drawings.
In the semiconductor device in this embodiment, the electrodes of the semiconductor chip and the electrodes of the substrate are electrically connected, and then packaged by a resin mold. Between the electrode of the semiconductor chip and the electrode of the substrate, at least two minute balls are overlapped and joined, and both electrodes are electrically connected.
[0011]
FIG. 1 shows the main steps in this embodiment. First, minute metallic balls B are bonded to the respective electrodes 12 of the electrode 2 and the substrate 11 of Oite semiconductor chip 1 in FIG. The minute metal ball B can be bonded to the electrode 2 or the electrode 12 by thermocompression bonding. The material for forming the electrode 2 of the semiconductor chip 1 may be aluminum, for example. Further, as a material for forming the electrode 12 of the substrate 11, for example, Cu or Au may be plated on Cu. The substrate 11 is a printed wiring board or a carrier tape. As an example, the fine metal balls B are made of gold (Au) on both the semiconductor chip 1 side and the substrate 11 side, and a size of about 30 to 500 μm in diameter is suitable.
[0012]
Next, each joined minute metallic balls B to the electrode 12 of the electrode 2 and the substrate 11 of the semiconductor chip 1 is bonded to each other by reflowing the low-melting minute balls both electrodes as shown in FIG. Electrode 12 of the electrode 2 and the substrate 11 of the semiconductor chip 1 are electrically connected This ensures.
[0014]
By sufficiently securing the bump height in this way, the bonding distance between the electrodes is increased, and high relaxation absorption against thermal stress based on the difference in thermal expansion coefficient is provided. High durability against fatigue failure and high adhesive strength against thermal expansion can be ensured. In the case of packaging with a resin mold, a sufficient amount of resin can be poured between the semiconductor chip 1 and the substrate 11, thereby increasing the strength of the semiconductor device and achieving sufficient protection.
[0015]
Here, in the present embodiment, a ball supply unit is used that arranges and holds the minute metal balls B at positions corresponding to at least one electrode 2 of the semiconductor chip 1 or the electrode 12 of the substrate 11. As shown in FIG. 3 , the ball supply means includes a ball arrangement head 20 for arranging and holding minute metal balls B.
[0016]
The ball array head 20 includes an array substrate 21 having a plurality of ball array holes 21 a corresponding to the electrode portions 2 (or the electrodes 12 of the substrate 11) of one or more semiconductor chips 1, and is evacuated through a suction chamber 22. It has come to be. A vacuum pump as a vacuum suction source is connected to the suction chamber 22, and the ball array head 20 holds and holds the minute metal balls B in the ball array holes 21 a.
[0017]
Ball array head 20 in the supply portion of the minute metallic balls B, and descends from the container 30 upwardly to accommodate the minute metallic balls B, and container 30 at a predetermined timing (Figure 3 (A)). Further, as shown in FIG. 3 (B), the fine metal balls B are arranged and held in the ball arrangement holes 21a of the arrangement substrate 21 by evacuation through the suction chamber 22. Incidentally, when the minute metal balls B are attracted to the ball array holes 21a of the array substrate 21, means such as vibrating the container 30 to make the minute metal balls B float in the container 30 and facilitating the adsorption. It is done.
[0018]
One minute metallic balls B are adsorbed on the ball array holes 21a of the arranging substrate 21 as shown in FIG. 3 (C). Here, it further includes surplus ball removing means for removing the surplus balls from the arrangement substrate 21 and adsorbing one minute metal ball B to each ball arrangement hole 21a when adsorbing the minute metal balls B. This surplus ball removing means can be configured, for example, such that an extra minute metal ball B is detached from the array substrate 21 by applying fine vibration to the array substrate 21.
[0019]
Further, the arrangement state of the minute metal balls B arranged and held on the arrangement substrate 21 as described above is inspected. In this case, it is possible to shoot the arrangement of minute metallic balls B by the image recognition unit (TV camera) 40 from below the array substrate 21 as shown in FIG. 3 (C), to verify the quality of the alignment state.
[0020]
In this way, when the fine metal balls B are joined to the electrodes 2 of the semiconductor chip 1 and the electrodes 12 of the substrate 11, the fine metal balls B are arranged and held at positions corresponding to the electrodes 2 and 12 by the ball arrangement head 20. Then, the fine metal balls B held in an array are transferred and bonded to the electrodes 2 and 12.
[0021]
As described above, by bonding two or more different species of minute metallic balls B between the electrodes 12 of the electrode 2 and the substrate 11 of the semiconductor chip 1, it is possible to ensure a long electrode distance.
[0022]
2 between the copper electrode 12 of the aluminum electrode 2 and the substrate 11 of the semiconductor chip 1, three minute metallic balls B 1, B 2 Contact and B 3 are inserted as shown. The copper electrode 12 is tin (Sn) plated.
[0023]
In the above case, the case of bonding using a fine metal ball B which has the order of the gold / low melting metal / gold by heating the low melting point metal above the melting temperature, preferably reflowed.
[0024]
In the said embodiment, the example in the case of electrically connecting the semiconductor chip 1 and the board | substrate 11 via the fine metal ball | bowl B was demonstrated. In addition to this case, the present invention can be similarly applied to the case where other semiconductor chips or substrates are electrically connected to each other, and the same effects as those of the above-described embodiment can be obtained.
[0025]
【The invention's effect】
According to the present invention described above, when connecting the tip electrode substrate or chip electrodes and electrically the semiconductor device of this type, joining two or more different species of minute metallic balls between the electrodes Thus, a long electrode interval can be secured. By extending the distance between the electrodes in this way, it has excellent relaxation absorbability against thermal stress based on the difference in thermal expansion coefficient, so it is excellent in protecting semiconductor chips, excellent durability against fatigue failure, and high adhesion to thermal expansion Ensure strength. Even when a chip having a small chip size is packaged, there is an advantage that resin molding can be performed appropriately and smoothly.
[Brief description of the drawings]
FIG. 1 is a diagram showing main steps in an embodiment of the method of the present invention.
FIG. 2 is a diagram showing an embodiment of the present invention.
FIG. 3 is a view showing a ball arrangement holding step by the ball arrangement head according to the embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Electrode 11 Substrate 12 Electrode 20 Ball arrangement head 21 Arrangement board 30 Container B Minute metal ball

Claims (5)

In a manufacturing method of a semiconductor device having a connection structure for electrically connecting one chip electrode and the other substrate or chip electrode,
A fine gold ball (except for a ball by the wire ball bonding method) is joined to one electrode and the other electrode, and the fine gold ball joined to both electrodes is joined to each other by reflowing a low melting point fine ball. Thereby, the chip electrode and the substrate or the chip electrode are electrically connected. When bonding a microscopic gold ball to one electrode or the other electrode, and characterized in that the microscopic gold balls are arranged and held in a position corresponding to the electrodes, transferring joining the microscopic gold balls this array held in each electrode A method for manufacturing a semiconductor device according to claim 1. In the manufacturing method of the semiconductor device according to claim 2,
A method of manufacturing a semiconductor device, wherein the fine gold balls are adsorbed when the fine gold balls are arranged and held. 4. The method for manufacturing a semiconductor device according to claim 2, wherein when the fine gold balls are arranged and held, surplus fine gold balls are removed by applying fine vibration. In a semiconductor device in which one chip electrode and the other substrate or chip electrode are electrically connected,
A fine gold ball (except for a ball by wire ball bonding method) is joined to one electrode and the other electrode, and the fine gold ball joined to both electrodes is joined to each other by reflowing a low melting point fine ball. Thus, the chip electrode and the substrate or the chip electrode are electrically connected through these fine gold balls .

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