JP3680544B2 - High voltage power IC output stage circuit - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an output stage circuit of a high withstand voltage power IC which is a circuit for driving an inverter load, a plasma display panel (the load is a discharge tube) and the like, and is constituted by a level shift circuit and a totem pole circuit.
[0002]
[Prior art]
In recent years, due to advances in isolation technologies such as junction isolation and dielectric isolation, high voltage devices such as diodes, insulated gate bipolar transistors (hereinafter abbreviated as IGBTs), MOSFETs, and their drive, control, and protection circuits are integrated into a single silicon substrate. The development of high-voltage power ICs integrated on top has become active. In particular, the progress of dielectric isolation technology combining bonded substrates (hereinafter abbreviated as SOI) and trench technology enables the integration of multiple high-voltage bipolar devices and unipolar devices, greatly increasing the field of application of power ICs. Expanded. For example, a totem pole circuit to which a high-voltage insulated gate bipolar device such as an IGBT is applied and an integrated circuit in which the totem pole circuits are combined in multiple stages are formed on one chip.
[0003]
FIG. 34 shows an output stage circuit of a high voltage IC including a conventional totem pole circuit. This circuit comprises a totem pole circuit 2a composed of two high breakdown voltage n-channel MOSFETs N1 and N2 and a conventional level shift circuit 1c for driving the gate of N1 which is a high breakdown voltage n channel MOSFET on the high potential side. ing. The totem pole circuit 2a is widely applicable to inverter ICs for driving motors, display driving ICs, and the like. This level shift circuit 1c requires a low-voltage separate power source VL in addition to N7, which is a high breakdown voltage n-channel MOSFET, high resistors R2, R3, R6, and P3, which is a low breakdown voltage p-channel MOSFET.
[0004]
FIG. 35 shows an output stage circuit of a high voltage IC including a conventional push-pull circuit. The difference from the totem pole circuit 2a is that the high potential side (the upper arm side) is formed of a high breakdown voltage p-channel type device instead of a high breakdown voltage n channel type. The withstand voltage p-channel device is composed of P4 which is a high withstand voltage p-channel MOSFET. By using the p-channel type device and the n-channel type device in this way, the reference potential of the gate drive power supply can be matched with the potential of the output terminal, and the gate drive circuit on the upper arm side including the level shift circuit 1a is simplified. Can be
[0005]
[Problems to be solved by the invention]
However, in FIG. 34, there is a problem that this level shift circuit requires a separate power source VL. For example, if there are few output stage circuits such as a three-phase inverter IC, the arrangement of the separate power source does not matter so much. However, although not shown in the figure, such as a display driver IC, a charge pump is used instead of this level shift circuit. A circuit may be used, and when several tens of output stage circuits are required, it becomes a big problem. In the totem pole circuit, the upper arm device and the lower arm side (that is, the low potential side) device use the same type of n-channel device, so a so-called arm short circuit in which the upper and lower arms are simultaneously turned on is likely to occur. There arises a problem that measures to prevent this arm short circuit must be taken. In addition, since a reverse current flows in the devices constituting the totem pole circuit depending on the state of the load, it is necessary to take a measure for flowing the reverse current. In particular, this problem occurs when an IGBT is used.
[0006]
On the other hand, in FIG. 35, the high-breakdown-voltage p-channel MOSFET constituting the push-pull circuit through which the main current flows is inferior in current-carrying capacity compared to the n-channel device because of the p-channel device. Therefore, in order to pass a current having the same magnitude as that of the high-voltage n-channel MOSFET of the lower arm, the current-carrying area must be increased. The increase in the area exceeds the effect of simplifying the gate driving circuit, resulting in a problem that the chip size is increased and the chip cost is increased as compared with the totem pole circuit.
[0007]
An object of the present invention is to provide an output stage circuit of a high voltage power IC that solves the above-described problems, eliminates the need for a separate power supply, is unlikely to cause an arm short circuit, can carry a reverse current, and can reduce the chip size. There is to do.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, a totem pole circuit in which a source part of a high voltage n-channel MOSFET on the high potential side and a drain part of a high voltage n channel MOSFET on the low potential side are connected, and the connection point serves as an output terminal. In the output stage circuit of the high voltage power IC in which the high voltage side high breakdown voltage n-channel MOSFET is driven by the level shift circuit, the output part of the level shift circuit and the gate part of the high voltage p channel MOSFET are connected, A first resistor is connected between the gate portion of the high breakdown voltage n-channel MOSFET on the high potential side and the drain portion of the high breakdown voltage p channel MOSFET, and the source portion of the high breakdown voltage p channel MOSFET is connected to the high potential side of the power supply. The gate portion of the high-voltage n-channel MOSFET on the high potential side is connected to one end of the second resistor and the cathode portion of the diode. The source portion of the high-voltage side high-voltage n-channel MOSFET is connected to the other end of the second resistor and the anode portion of the diode, and the drain portion of the low-potential side n-channel MOSFET is connected to the first drain portion and the second drain portion. Drain2 independent multi-drain sectionsThe first drain part for flowing the main current is connected to the source part of the high-voltage side high-voltage n-channel MOSFET, and the second drain part for flowing a part of the main current is the gate of the n-channel MOSFET on the high-potential side It is set as the structure connected with a part.
[0009]
A totem pole circuit in which the source portion of the high voltage n-channel MOSFET on the high potential side and the drain portion of the high voltage n channel MOSFET on the low potential side are connected, and the connection point serves as an output terminal. In an output stage circuit of a high breakdown voltage power IC in which a high breakdown voltage n-channel MOSFET on the high potential side is driven, the output section of the level shift circuit and the gate section of the high breakdown voltage p-channel MOSFET are connected to each other. The gate portion of the channel MOSFET and the drain portion of the high breakdown voltage p-channel MOSFET are directly connected, the source portion of the high breakdown voltage p-channel MOSFET is connected to the high potential side of the power supply, and the gate portion of the high breakdown voltage n channel MOSFET on the high potential side And one end of the second resistor and the cathode of the diode are connected, and a high breakdown voltage n-channel M on the high potential side The source part of the SFET is connected to the other end of the second resistor and the anode part of the diode, and the drain part of the n-channel MOSFET on the low potential side is two independent multi-drains of the first drain part and the second drain part. The first drain part for flowing the main current is connected to the source part of the high-voltage side high-breakdown-voltage n-channel MOSFET, and the second drain part for flowing a part of the main current is connected to the high-potential-side n-channel MOSFET. It is configured to be connected to the gate unit.
[0010]
Further, the high breakdown voltage p-channel MOSFET may be replaced with a high breakdown voltage pnp transistor.
The high potential side n-channel MOSFET may be replaced with an n-channel IGBT and a free wheel diode.
[0011]
In addition, the low-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode, and the collector of the n-channel IGBT is composed of two independent first collector portions and a multi-collector portion of a second collector portion. Is connected to the source portion of the high breakdown voltage n-channel MOSFET on the high potential side, and is connected to the gate portion of the n channel MOSFET on the high potential side. It is good.
[0012]
Also, the high-potential side n-channel MOSFET is replaced with an n-channel IGBT and a free wheel diode, and the low potential side n-channel MOSFET is replaced with an n-channel IGBT and a free wheel diode. The first collector section and the second collector section are multi-collector sections, and the first collector section for flowing the main current is connected to the emitter section of the high-voltage n-channel IGBT on the high potential side so that a part of the main current flows. The second collector portion may be connected to the gate portion of the n-channel IGBT on the high potential side.
[0013]
Also, the low-potential side n-channel MOSFET is replaced with an n-channel IGBT and a free wheel diode,
The n-channel IGBT on the low potential side
A base region of the second conductivity type formed on the surface layer of the first conductivity type substrate, a source region and a second conductivity type contact region of the first conductivity type formed on the surface layer of the base region, and a source region and a contact An emitter electrode in contact with the region; a gate electrode formed on the base region sandwiched between the source region and the substrate via a gate insulating film; and a first layer formed on the surface layer of the substrate apart from the base region. A conductivity type buffer region, a second conductivity type main collector region and a second conductivity type auxiliary collector region formed at a predetermined distance in the buffer region, a main collector electrode in contact with the main collector region, and an auxiliary An auxiliary collector electrode in contact with the collector region, the main collector electrode is connected to the source portion of the high-voltage n-channel MOSFET on the high potential side, and the auxiliary collector electrode is on the high potential side It may be configured to be connected to the gate portion of the channel MOSFET.
[0014]
Further, the high-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode, and the low-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode.
The n-channel IGBT on the low potential side
A base region of the second conductivity type formed on the surface layer of the first conductivity type substrate, a source region and a second conductivity type contact region of the first conductivity type formed on the surface layer of the base region, and a source region and a contact An emitter electrode in contact with the region; a gate electrode formed on the base region sandwiched between the source region and the substrate via a gate insulating film; and a first layer formed on the surface layer of the substrate apart from the base region. A conductivity type buffer region, a second conductivity type main collector region and a second conductivity type auxiliary collector region formed at a predetermined distance in the buffer region, a main collector electrode in contact with the main collector region, and an auxiliary An auxiliary collector electrode in contact with the collector region, the main collector electrode is connected to the emitter portion of the high breakdown voltage n-channel IGBT on the high potential side, and the auxiliary collector electrode is n on the high potential side It may be configured to be connected to the gate of the Yaneru IGBT.
[0015]
In addition, it is effective that the level shift circuit has a current limiting high resistance connected in series to the drain of the high voltage n-channel MOSFET constituting the circuit. In this way, the current consumption of the level shift circuit constituting the high potential side device driving circuit can be reduced by connecting the current limiting high resistance to the drain of the high voltage n-channel MOSFET.
[0016]
In addition, the level shift circuit may include a constant current circuit including a mirror circuit including a high breakdown voltage n-channel MOSFET and another high breakdown voltage n-channel MOSFET having the same breakdown voltage structure as the MOSFET. Further, the level shift circuit has a constant current circuit including a mirror circuit composed of a high breakdown voltage n-channel MOSFET and another high breakdown voltage n-channel MOSFET having the same breakdown voltage structure as the MOSFET, It is effective if the channel widths of the high breakdown voltage n-channel MOSFETs are different.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 shows a first embodiment of the present invention, which is an output stage circuit of a high breakdown voltage power IC in which a high breakdown voltage p-channel MOSFET is connected to an output terminal of a constant current type level shift circuit.
In FIG. 1, the output terminal of the constant current type level shift circuit 1a is connected to the gate portion 21 of P1, which is a high breakdown voltage p-channel MOSFET, and the drain portion 27 of P1 constitutes a totem pole circuit via a high resistor R2. It is connected to the gate portion 23 of N1, which is a high voltage n-channel MOSFET on the high potential side (upper arm side). The level shift circuit includes three n-channel MOSFETs N3, N4, and N5, a high-resistance element R4, and a low-breakdown-voltage p-channel MOSFET P2. This circuit is called a constant current circuit, a so-called current mirror circuit. Here, N3 is a high voltage element. N4 is an element having the same specifications as N3. The resistors R3 and R4 have a resistance value of several tens of kΩ, R4 suppresses the current value flowing through the constant current circuit, and R3 suppresses the gate drive voltage of P1. Zener diode D2 connected in parallel with R3 suppresses the gate overvoltage generated at R3. The input terminal IN1 of the level shift circuit is connected to the gate parts 24 and 25 of P2 and N5, and the output terminal 26 is connected to the gate part 21 of the high breakdown voltage p-channel MOSFET. The source part 22a of P2 is connected to a power supply VDL of 5V, for example. The totem pole circuit 2a includes a high-voltage side high-voltage n-channel MOSFET N1 and a low-voltage side (lower arm side) high-voltage n-channel MOSFET N2, and the drain portion 28 of N1 has a high voltage. The power source VDH is connected, and the source portion 29a of N2 is connected to the ground GND. The connection point 31 between the source portion 29 of N1 and the drain portion 30 of N2 is connected to the output terminal OUT of the totem pole circuit, and the gate portion 32 of N2 is connected to the input terminal IN2.
[0030]
The operation of this level shift circuit is as follows. An input signal for driving N1 of the upper arm of the totem pole circuit is inputted from the input terminal IN1 to the gate parts 24 and 25 of P2 and N5 constituting the constant current circuit of the constant current type level shift circuit 1a. P2 is turned on and N5 is turned off. When P2 is turned on, a constant current circuit that is a current mirror circuit composed of R4, N4, and N3 operates, and the same current flows through N3 and N4. When the current flowing through N3 flows through R3, the gate portion 21 of P1 is biased and P1 is turned on. The current flowing through P1 flows through R1, the voltage generated at R1 is applied to the gate portion 23 of N1, and N1 becomes conductive. Here, D1, which is a protective diode, is necessary to suppress an increase in the gate-source potential of N1. A Zener diode is usually used for D1. The resistor R2 has a value of several kΩ to several tens of kΩ, and controls the charging speed of the gate portion 23 of N1. When it is desired to increase the charging speed, the resistance value of R2 is decreased. In some cases, even without this R2, there is no problem in operation. In the following embodiments, even if R2 is omitted, there is no problem in operation, but it is preferable to attach R2 for circuit protection when the circuit operates abnormally.
[0031]
As described above, by connecting P1, which is a high-breakdown-voltage p-channel MOSFET, with the output terminal 26 of the level shift circuit 1a, the separate power source VL described in the prior art becomes unnecessary.
FIG. 2 shows a second embodiment of the present invention, which is an output stage circuit of a high breakdown voltage power IC in which a high breakdown voltage p-channel MOSFET is connected to an output terminal of a resistance division type level shift circuit.
[0032]
In FIG. 2, the difference from FIG. 1 is that the gate driving of P1 is performed by applying a resistance division type level shift circuit 1b. This circuit is comprised of N6, which is a high voltage n-channel MOSFET, a resistor R3 of several tens of kΩ, and a resistor R5 of several thousand kΩ to several MΩ. R5 also functions to control the current flowing through N6. The circuit is simpler than in FIG. 1, and the number of parts is small.
[0033]
In this circuit, when an input signal for driving N1 of the totem pole circuit 2a is input from N1 to N6, a current flows through R3, and P1 is driven by the voltage drop of R3. The subsequent operation is the same as in FIG.
FIG. 3 is a circuit diagram showing a third embodiment of the present invention, in which the device on the upper arm side of the totem pole circuit 2a of FIG. 1 is replaced with N11 which is an IGBT.
[0034]
In FIG. 3, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT. In this circuit, there is no problem even if a resistance-division type level shift circuit 1b is applied as in FIG. 2 instead of the level shift circuit 1a of the constant current circuit. The operation at that time is the same as in FIG. A large current can be passed by replacing the MOSFET with an IGBT or a voltage-driven thyristor. In particular, in the case of a plasma display or the like, the magnitude of the current flowing between the upper arm side and the lower arm side is different, so it is effective to apply an IGBT or a voltage-driven thyristor to the arm through which a large current flows.
[0035]
FIG. 4 is a circuit diagram showing a fourth embodiment of the present invention in which the device on the lower arm side of the totem pole circuit of FIG. 1 is replaced with N21 which is an IGBT.
In FIG. 4, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT. In this circuit, the constant current type level shift circuit 1a is applied, but there is no problem even if the resistance voltage division type level shift circuit 1b is applied as in FIG. The operation at that time is the same as in FIG.
[0036]
FIG. 5 is a circuit diagram in which a constant current type level shift circuit 1a is applied and a device on the upper arm side and a device on the lower arm side of the totem pole circuit in FIG. is there.
In FIG. 5, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT. Further, there is no problem even if the resistance dividing circuit 1b is applied as in FIG. The operation at that time is the same as in FIG. By applying IGBT to the upper and lower arms, the current capacity can be increased. In addition, this circuit is effective because the same current flows in the upper and lower arms for driving the motor and the like.
[0037]
FIG. 6 is a totem pole circuit diagram in which the arm short circuit is prevented in the sixth embodiment of the present invention.
In FIG. 6, in the totem pole circuit 2b, the drain part 30 of N2 which is a high breakdown voltage n-channel MOSFET of the lower arm side device is connected to the gate part 23 of the device N1 on the upper arm side, and the drain part of N2 and N1 D1 is inserted between the source portions 29, and a connection point 31 between D1 and the source portion 29 is connected to the output terminal OUT. Therefore, when N2 is turned on, the current flowing through N2 passes through D1. Due to the forward voltage drop of D1, the gate potential of N1 is always lower than the source potential. Therefore, N1 is not turned on when N2 is on. That is, an arm short circuit can be reliably prevented. Further, by forming D1 and N2 in the semiconductor substrate, an IGBT is configured, and the current drive capability on the lower arm side can be improved as compared with the case where N2 is formed alone. The operation of N1, which is the device on the upper arm side of FIG. 6, is the same as the operation in FIG.
[0038]
FIG. 7 is a circuit diagram showing a seventh embodiment of the present invention in which the device on the upper arm side of the totem pole circuit 2b of FIG. 6 is replaced with an IGBT.
In FIG. 7, the operation of this circuit is the same as in FIG. A voltage drive thyristor or the like can be applied instead of the IGBT. By doing so, the current capacity can be increased.
[0039]
FIG. 8 is a circuit diagram of an eighth embodiment of the present invention in which an arm short-circuit prevention device is arranged in parallel with N2 which is a high voltage n-channel MOSFET on the low potential side.
In FIG. 8, the arm short-circuit prevention device is N22 which is a first auxiliary high breakdown voltage n-channel MOSFET, and the drain portion 33 of this N22 is connected to the gate portion 23 of N1 which is a high breakdown voltage n-channel MOSFET on the upper arm side. , N22 gate portion 34 is connected to N2 gate portion 32 which is a high breakdown voltage n-channel MOSFET on the lower arm side. Since N22 switches in synchronization with N2, the short-circuit protection operation is the same as the circuit operation shown in FIG. In this case, since it is not necessary to pass a large current through N22, the device area can be made smaller than N2. Note that the driving operation of N1 in FIG. 8 is the same as the operation in FIG.
[0040]
FIG. 9 is a circuit diagram showing a ninth embodiment of the present invention in which the device on the lower arm side of the totem pole circuit 2a of FIG. 8 is replaced with an IGBT.
In FIG. 9, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT.
FIG. 10 is a circuit diagram showing a tenth embodiment of the present invention in which the upper arm side device of the totem pole circuit 2a of FIG. 8 is replaced with an IGBT.
[0041]
In FIG. 10, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT.
FIG. 11 is a circuit diagram in which the device on the upper arm side of the totem pole circuit of FIG. 9 is replaced with an IGBT according to an eleventh embodiment of the present invention.
In FIG. 11, the operation of this circuit is the same as in FIG. Note that a voltage-driven thyristor or the like can be applied instead of the IGBT.
[0042]
FIG. 12 shows a twelfth embodiment of the present invention, which is a circuit diagram in which a free-wheeling diode for reverse energization is arranged in parallel with the IGBT which is the upper arm device of the totem pole circuit 2a of FIG.
In FIG. 12, the cathode part 35 of D6 which is a free wheel diode is connected to the collector part 36 of N11 which is IGBT, and the anode part 37 is connected to the emitter part 38 of N11. On the lower arm side, a reverse current can flow through D9, which is a high-voltage n-channel MOSFET N2 parasitic diode (shown by a dotted line), so there is no need to newly install a reverse-wheeling freewheel diode. .
[0043]
FIG. 13 shows a thirteenth embodiment of the present invention, which is a circuit diagram in which a free-wheeling diode for reverse energization is arranged in parallel with an IGBT which is a device on the lower arm side of the totem pole circuit of FIG.
In FIG. 13, the cathode part 39 of D4 which is a free wheel diode is connected to the collector part 40 of N21 which is IGBT, and the anode part 41 is connected to the emitter part 42 of N21. On the upper arm side, a reverse current can flow through D5 which is a parasitic diode of N1 (indicated by a dotted line), which is a high breakdown voltage n-channel MOSFET, so that it is not necessary to newly arrange a free wheel diode for reverse energization. .
[0044]
FIG. 14 is a circuit diagram showing a fourteenth embodiment of the present invention in which free wheel diodes are arranged in the IGBTs of the upper and lower arms of the totem pole circuit of FIG.
In FIG. 14, the cathode part 35 of D6 which is a free wheel diode is connected to the collector part 36 of N11 which is IGBT, and the anode part 37 is connected to the emitter part 38 of N11. The cathode portion 39 of D4, which is a freewheel diode, is connected to the collector portion 40 of N21, which is an IGBT, and the anode portion 41 is connected to the emitter portion 42 of N21.
[0045]
FIG. 15 shows a fifteenth embodiment of the present invention, which is a circuit diagram in which a high voltage diode for reverse energization is arranged on the lower arm side of the totem pole circuit of FIG.
In FIG. 15, the cathode part 43 of D4 which is the second auxiliary diode of this high voltage diode is connected to the source part 29 of N1 which is the high voltage n channel MOSFET of the upper arm side device, and the anode part 44 is connected to GND. The This circuit has a disadvantage that current flows from the ground side to the high potential side of the high voltage power supply VDH through the N2 parasitic diode D9 which is a high breakdown voltage n-channel MOSFET of the lower arm. Therefore, the first purpose is to cut off this current path. The cathode part 45 of D3 which is an auxiliary diode is connected to the drain part 30 of N2, and D3 and N2 are connected in series. Since a reverse current can flow through D5 which is a parasitic diode of N1 on the upper arm side, it is not necessary to newly arrange a free wheel diode for reverse energization.
[0046]
FIG. 16 shows a sixteenth embodiment of the present invention, which is an example in which high-voltage diodes for reverse energization are arranged on the upper and lower arms of the totem pole circuit of FIG.
In FIG. 16, the cathode part 35 of D6 which is a free wheel diode is connected to the collector part 36 of N11 which is the IGBT of the upper arm, and the anode part 37 is connected to the emitter part 38 of N11. The cathode portion 43 of D4, which is the second auxiliary diode of the lower arm, is connected to the emitter portion 38 of N11, and the anode portion 44 is connected to GND. This circuit has the disadvantage that current flows from GND to the high potential side of the high voltage power supply VDH through the N2 parasitic diode D9, which is a high breakdown voltage n-channel MOSFET of the lower arm. Therefore, the first auxiliary is intended to cut off this current path. The cathode part 45 of D3 which is a diode is connected to the drain part 30 of N2, and D3 and N2 are connected in series.
[0047]
FIG. 17 shows a seventeenth embodiment of the present invention, which is a circuit diagram in which a free-wheeling diode for reverse energization is arranged in parallel with the IGBT on the lower arm side of the totem pole circuit of FIG.
In FIG. 17, the cathode part 43 of D4, which is a freewheel diode, is connected to the collector part 40 of N21, which is an IGBT, and the anode part 44 and the emitter part 42 are connected. In this circuit, there is a disadvantage that current flows from GND to the high potential side of the high voltage power supply VDH through the parasitic diode of N22 which is the first auxiliary high breakdown voltage n-channel MOSFET of the lower arm. The cathode part 45 of D3 which is one auxiliary diode is connected to the drain part 30 of N22, and D3 and N22 are connected in series. Since a reverse current can flow through D5 which is a parasitic diode of N1 on the upper arm side, it is not necessary to newly arrange a free wheel diode for reverse energization.
[0048]
FIG. 18 is a circuit diagram showing an 18th embodiment of the present invention in which D6, which is a free-wheeling diode for reverse conduction, is arranged in parallel with N11 which is the IGBT of the upper arm of the totem pole circuit of FIG.
In FIG. 18, the cathode portion 35 of D6 is connected to the collector portion 36 of N11, and the anode portion 37 is connected to the emitter portion 38 of N11. In this circuit, there is a disadvantage that current flows from GND to the high potential side of the high voltage power supply VDH through the parasitic diode of N22 which is the first auxiliary high breakdown voltage n-channel MOSFET of the lower arm. One auxiliary diode D3 and N22 are connected in series. Since a reverse current can flow through D9, which is a parasitic diode of N2, on the lower arm side, there is no need to newly arrange a free wheel diode for reverse energization.
[0049]
FIG. 19 shows a nineteenth embodiment of the present invention, which is an example in which free-wheeling diodes for reverse energization are arranged on the IGBTs of the upper and lower arms of the totem pole circuit of FIG.
In FIG. 19, the cathode part 35 of D6 which is a free wheel diode is connected to the collector part 36 of N11 which is the IGBT of the upper arm, and the anode part 37 is connected to the emitter part 38 of N11. The cathode portion 43 of D4 which is a free wheel diode is connected to the collector portion 40 of N21 which is the lower arm IGBT, and the anode portion 44 is connected to the emitter portion 42 of N21. In this circuit, there is a disadvantage that current flows from the ground side to the high potential side of the high voltage power supply VDH through the parasitic diode of N22 which is the first auxiliary high withstand voltage n-channel MOSFET of the lower arm. The first auxiliary diode D3 is connected in series with N22.
[0050]
FIG. 20 shows a twentieth embodiment of the present invention. In the totem pole circuit of FIG. 12, a circuit diagram in which a second auxiliary high voltage n-channel MOSFET is arranged in place of a free wheel diode for reverse energization of the IGBT of the upper arm. It is.
In FIG. 20, a reverse current can flow through the parasitic diode D8 of N12 which is the second auxiliary high breakdown voltage n-channel MOSFET on the upper arm side, and a current can flow through N11 and N12 during forward energization. The current-carrying capacity is improved as compared with the case where the free wheel diode D6 of FIG. 19 is arranged. Since a reverse current can flow through D9, which is a parasitic diode of N2, on the lower arm side, there is no need to newly dispose a free wheel diode for reverse conduction.
[0051]
FIG. 21 shows a twenty-first embodiment of the present invention. In the totem pole circuit of FIG. 13, a second auxiliary high breakdown voltage n-channel MOSFET is arranged in place of a reverse-wheeling freewheel diode in the lower arm IGBT. is there.
In FIG. 21, the reverse current on the lower arm side can be passed through the parasitic diode (D7) of N23 which is the second auxiliary high breakdown voltage n-channel MOSFET. The drain part 46 of N23 is connected to the collector part 40 of N21 which is the IGBT of the lower arm, the source part 47 and the gate part 48 are connected to the emitter part 42 and the gate part 49 of N21, and N23 operates in synchronization with N21. Therefore, the current-carrying capacity at the time of forward conduction on the lower arm side is improved as compared with the case where the free wheel diode D4 of FIG. 19 is arranged. Note that, on the upper arm side, a reverse current can be passed through D5 which is a parasitic diode of N1, and therefore, it is not necessary to newly provide a free wheel diode for reverse energization.
[0052]
FIG. 22 shows a twenty-second embodiment of the present invention. In the totem pole circuit of FIG. 14, a circuit in which a second auxiliary high breakdown voltage n-channel MOSFET is arranged instead of a free wheel diode arranged as a reverse energization device for upper and lower arms. FIG.
In FIG. 22, the reverse current of the upper and lower arms can be passed through parasitic diodes (D8, D7) of N12 and N23 which are the second auxiliary high breakdown voltage n-channel MOSFETs.
[0053]
The drain part 61 of N12 is connected to the collector part 36 of N11 which is the IGBT of the upper arm. Since the N12 device operates in synchronization with N11 which is the IGBT of the upper arm, the current-carrying capability at the time of forward conduction on the upper arm side is improved as compared with the case where D6 which is a free wheel diode is arranged.
The drain part 46 of N23 is connected to the collector part 40 of N21 of the lower arm IGBT, and the source part 47 and gate part 48 are connected to the emitter part 42 and gate part 49 of N21. Since N23 operates in synchronization with N21, the current-carrying capacity during forward conduction on the lower arm side is improved as compared with the case where the diode D4 is arranged.
[0054]
FIG. 23 shows a twenty-third embodiment of the present invention. In the totem pole circuit of FIG. 17, a circuit diagram in which a second auxiliary high-breakdown-voltage n-channel MOFET is arranged instead of a free wheel diode for reverse conduction of the lower arm IGBT. It is.
In FIG. 23, the reverse current on the lower arm side can be passed through the parasitic diode (D7) of N23 which is the second auxiliary high breakdown voltage n-channel MOSFET.
[0055]
The connection between N23 and N21, which is the IGBT of the lower arm, is the same as in FIG. Since N23 operates in synchronization with N21, the current-carrying capacity during forward conduction on the lower arm side is improved as compared with the case where D4 which is a freewheel diode is arranged. Since a reverse current can flow through the N1 parasitic diode (D5), which is a high-breakdown-voltage n-channel MOSFET of the upper arm, it is not necessary to newly provide a reverse-wheeling freewheel diode.
[0056]
FIG. 24 is a circuit diagram showing a twenty-fourth embodiment of the present invention in which a second auxiliary high breakdown voltage n-channel MOSFET is disposed in place of the free wheel diode for reverse energization of the upper and lower arms in the totem pole circuit of FIG. .
In FIG. 24, the reverse currents of the upper and lower arms can be passed through the parasitic diodes (D8, D7) of N12 and N23 which are the second auxiliary high breakdown voltage n-channel MOSFETs.
[0057]
The connection between N12 and N11 which is the IGBT of the upper arm is the same as that in FIG. Since N12 operates in synchronization with N11, the current-carrying capability during forward conduction on the upper arm side is improved as compared with the case where only the freewheel diode D6 of FIG. 19 is arranged.
The connection between N23 and N21 which is the IGBT of the lower arm is the same as in FIG. Since No. 23 operates in synchronization with N21, the current-carrying capacity at the time of forward conduction on the lower arm side is improved as compared with the case where only the freewheel diode D4 of FIG. 19 is arranged.
[0058]
25 is a cross-sectional view of the case where the upper arm IGBT (N11) and the second auxiliary high breakdown voltage n-channel MOSFET (N12) in FIG. 20 are formed in one semiconductor region on a dielectric isolation substrate using an SOI substrate. .
In FIG. 25, a first conductivity type semiconductor substrate 5 is formed on a first or second conductivity type semiconductor substrate 3 via a bonding oxide film 4, and the bonding oxide film 4 is formed from the surface of the first conductivity type semiconductor substrate 5. The SOI substrate 50 is manufactured by forming the side wall oxide film 15 on the side wall of the groove and filling the groove with the polycrystalline semiconductor 16.
[0059]
A second conductivity type base region 6 is formed on the surface layer of the first conductivity type semiconductor substrate 5 of the SOI substrate 50, and the first conductivity type source region 8 a and the first conductivity type are formed on the surface layer of the second conductivity type base region 6. Type emitter region 8b (where 8a and 8b are connected, the first conductivity type diffusion region is simply named the MOSFET region side as the source region and the IGBT region side as the emitter region) and the second conductivity type. Contact region 7 is formed. A gate electrode 10 is formed on the surface of the second conductivity type base region 6 via a gate oxide film (not shown). Two first conductivity type buffer regions 11 are formed apart from the second conductivity type base region 6, and a high concentration first conductivity type drain region 12 is formed on the surface layer of one first conductivity type buffer region 11. It is formed as the drain side 101 of the MOSFET region 110, and the high-concentration second conductivity type collector region 13 is formed in the surface layer of the other first conductivity type buffer region 11 to be the collector side 102 of the IGBT region 111. The first and second conductivity types may be n-type and p-type, but the first conductivity type is usually n-type and the second conductivity type is p-type.
[0060]
Since the upper arm IGBT N11 and the second auxiliary high breakdown voltage n-channel MOSFET N12 can make the emitter electrode 9b and the source electrode 9a a common electrode, and the collector electrode 14b and the drain electrode 14a can also become a common electrode, N11 and N12 can be formed in the same semiconductor region.
In this structure, the emitter region 8a of the adjacent IGBT portion and the source region 8b of the MOSFET portion are shared. Further, the collector electrode 14a of the IGBT part and the drain electrode 14b of the MOSFET part are connected by a wiring. As a result, the area required for device fabrication can be made smaller than when N11 and N12 are formed in separate element regions.
[0061]
This method can also be applied to a freewheeling diode arranged for reverse energization. In this case, the emitter region of the adjacent IGBT portion and the anode region of the diode portion are shared. The collector electrode of the IGBT part and the cathode electrode of the diode part are connected by wiring.
26A and 26B are diagrams obtained by simulating the current distribution when the element shown in FIG. 25 is forward-biased. FIG. 26A is a hole current distribution diagram, and FIG. 26B is an electron current distribution diagram.
[0062]
In FIG. 26, the right half is the IGBT region 111 and the left half is the MOSFET region 110. The names corresponding to the numbers shown are the same as those in FIG. It can be clearly seen that the hole current ih flows only in the IGBT portion, and the electron current ie flows in both the IGBT portion and the MOSFET portion. That is, the second auxiliary high-breakdown-voltage n-channel MOSFET D12 arranged for reverse energization can pass a current even when forward biased. As a result, the current-carrying capacity at the time of forward bias is improved as compared with the case where the free wheel diodes are arranged in parallel.
[0063]
FIG. 27 is a twenty-fifth embodiment of the present invention and shows an output stage circuit of a high voltage power IC employing a multi-collector structure for the lower arm IGBT. This replaces N1 which is the n-channel MOSFET of the upper arm in FIG. 2 with N11 which is an IGBT and D6 which is a freewheel diode, and N2 which is an n-channel MOSFET of the lower arm is N81 which is a multi-collector IGBT and a freewheel. The diode is replaced with D4. The multi-collector is composed of a CM part which is a main collector part for supplying a main current and a CS part which is an auxiliary collector part for dividing a main current. The main collector terminal is the CM terminal and the auxiliary collector terminal is the CS terminal. The CM terminal is a terminal for flowing a main current connected to the output terminal OUT, and the CS terminal is a terminal used for preventing arm short circuit by connecting to the gate portion of N11. The IGBT is of course an n-channel type.
[0064]
The operation of this circuit will be described. When N81 is turned on, current flows into N81 via the CM terminal and the CS terminal. The current passing through the CM terminal passes through the Zener diode of D1. Therefore, the emitter potential of N11 is always higher than the gate potential by the voltage drop of D1. For this reason, the gate voltage of N11 is suppressed below the emitter potential, and N11 is not turned on when N81 is in the on state. Thereby, an arm short circuit can be prevented.
[0065]
In addition, since N81 having a small on-resistance is used as an element that also serves to prevent a short circuit, even when a short circuit current is generated via P1, an increase in the gate potential of N11 due to a voltage drop of N81 can be suppressed to a low level. Therefore, the short circuit current via P1 does not cause an arm short circuit between N81 and N11 of the main circuit.
Next, the operation of the upper arm side device drive circuit including the level shift circuit will be described. When a signal for operating N11, which is the upper arm device of the totem pole circuit 2a, is input to N6, the current flowing through N6 flows through the resistor R3, thereby turning on P1. A gate voltage for driving N11 is generated by the current flowing through P1 and the resistor R1.
[0066]
Here, the Zener diode D1 is necessary to suppress the rise of the emitter-gate potential of N11. The resistor R2 is a resistor that controls the gate charging speed of N11. Since this resistance value is adjusted according to the circuit characteristics, there is no problem even if it is short-circuited. The resistor R5 connected in series with the resistor R3 to the drain terminal of the high breakdown voltage n-channel MOSFET (N6) of the upper arm side device drive circuit suppresses the current consumption of the upper arm side device drive circuit in addition to the meaning of voltage division. Also works. Usually, this resistance is about several MΩ.
[0067]
FIG. 28 shows a cross-sectional structure of a lateral IGBT having the multi-collector structure of FIG. 27 according to the twenty-sixth embodiment of the present invention.
Although a horizontal structure is shown in FIG. 28, it is necessary to adopt a horizontal structure in order to configure a power IC in which a large number of output stage circuits using a totem pole circuit are integrated on one chip.
[0068]
This device structure will be described. A substrate to which an SOI substrate or a bonded separation substrate is applied is referred to as a first conductivity type substrate 201. A base region 202 of the second conductivity type is formed on the surface layer of the first conductivity type substrate 201, and a source region 203 of the first conductivity type and a contact region 204 of the second conductivity type are formed on the surface layer of the base region 202. To do. The emitter electrode 207 is in contact with the second conductivity type contact region 204 and a part of the first conductivity type source region 203. Further, the gate electrode 208 exists through the gate insulating film 210, and the first conductivity type source region 203 and the second conductivity type base region 202 sandwiched between the first conductivity type substrate 201 immediately below the gate insulating film are channel regions. 211.
[0069]
A buffer region 205 of the first conductivity type is formed at a distance from the base region 202 of the second conductivity type. A main collector region 206 and an auxiliary collector region 266 of the second conductivity type are formed in the buffer region 205. Here, the main collector region 206 is an element region forming a main circuit, and a CM terminal connected to the output terminal OUT of FIG. On the other hand, the auxiliary collector region 266 is an element region that constitutes an arm short circuit prevention circuit, and is in contact with a CS terminal that is an auxiliary collector terminal through which a part of the main current flows. The two collector regions 206 and 266 are formed in the same buffer region 205 by diffusion at a predetermined distance in order to avoid mutual interference.
[0070]
Note that each element constituted by the main collector region 206 and the auxiliary collector region 266 has a common emitter terminal E and gate terminal G.
FIG. 29 shows a plan view of an electrode pattern in the device of FIG. The plane pattern can be various patterns. FIG. 28 shows an example in which the element region applied to the arm short circuit prevention circuit is formed at the edge portion of the entire element region. 207 is an emitter electrode, 208 is a gate electrode, 209 is a main collector electrode, and 299 is an auxiliary collector electrode. The auxiliary collector electrode 299 is used for preventing arm short circuit.
[0071]
FIG. 30 shows a twenty-seventh embodiment of the present invention, which is a circuit example in which a high breakdown voltage n-channel MOSFET having a multi-drain structure is applied to the lower arm side device of the totem pole circuit. 27 is obtained by replacing N81, which is an IGBT having a multi-collector structure, and D4, which is a free wheel diode, with N71, which is a high-breakdown-voltage n-channel MOSFET having a multi-drain structure.
[0072]
The upper arm device drive circuit 1d in this circuit example has a circuit configuration to which P1, which is a high breakdown voltage p-channel MOSFET according to the present invention, is applied. The drive circuit 1d is a circuit in a region indicated by a dotted line including P1 and the like in the shift register circuit 1a.
The drain terminal of the multi-drain n-channel MOSFET (N71) is composed of a DM terminal and a DS terminal. The DM terminal is a terminal for flowing a main current connected to the output terminal OUT, and the DS terminal is a terminal for connecting to the gate terminal of N11 which is the upper arm side device and operating as an arm short-circuit prevention device. In this case, the diffusion layer where the DS terminal and the DS terminal are in contact is formed in the low-concentration diffusion layer, and the two diffusion layers are arranged at a sufficient distance.
[0073]
The operation of this circuit is the same as in FIG.
FIG. 31 shows a twenty-eighth embodiment of the present invention, which is a circuit in which P1 which is a high breakdown voltage p-channel MOSFET of the upper arm side device drive circuit is replaced with P11 which is a high breakdown voltage pnp transistor in the circuit of FIG. In this circuit, the resistor R3 in FIG. 27 becomes the pull-up resistor RP of P11. The pull-up resistor RP is a resistor that drives the pnp transistor with the voltage generated by this resistor. In this circuit, the voltage dividing resistor R5 is unnecessary. The operation of the circuit is the same as in FIG. As described above, this circuit can prevent the arm short circuit of the main circuit caused by the upper arm device drive circuit 1d.
[0074]
FIG. 32 shows a twenty-ninth embodiment of the present invention in which a device N31 having the same breakdown voltage structure as that of N3 is used in the preceding stage of the upper arm device driving circuit 1d for the purpose of reducing the current consumption of the upper arm device driving circuit. This is a circuit example in which a constant current circuit 3 f including a mirror circuit is connected. In this circuit system, the current flowing through N3 of the upper arm device drive circuit 1d can be controlled by a resistor R4 of about several tens of kΩ.
[0075]
In this circuit system, the delay time of the constant current circuit unit by adjusting R4 without increasing the current consumption of the upper arm side drive circuit by making the channel width of N3 smaller than N31 in the devices constituting the mirror circuit. Can be improved.
FIG. 33 shows an arm short circuit prevention circuit according to a thirtieth embodiment of the present invention. IGBT (N24) is used as an arm short circuit prevention element. The collector terminal of N24 is connected to the gate terminal of N11 which is the upper arm side device, and the emitter terminal and gate terminal of N24 are connected to the ground and the gate terminal of the lower arm side device N21, respectively, and N21 which is the lower arm side device. The arm short circuit prevention circuit is configured by arranging them in parallel. In this system, since the current flows to N24 through D1 disposed between the emitter and gate of the upper arm side device simultaneously with the turning on of N24, the emitter potential of N11 which is the upper arm side device is always higher than the gate potential. Become. Thus, it is not normal for N11, which is the upper arm side device, to turn on when N21, which is the lower arm side device, is in the on state.
[0076]
However, since there is a risk of malfunction due to noise or the like, two inverters INV1 and INV2 are connected in series to the gate of N21 as shown in the figure, and the turn-on start time of N21 is several n seconds with respect to N24 in terms of circuit. It is effective to delay and reliably prevent arm short circuit. This start time is adjusted by the drive capability of INV2. Further, the method of providing the inverters INV1 and INV2 can be delayed more reliably than the adjustment by the device size. Of course, this system is also effective when applied to the eighth to eleventh embodiments, the seventeenth to nineteenth embodiments, the twenty-third and twenty-fourth embodiments.
[0080]
【The invention's effect】
According to this invention,The lower arm side device of the totem pole circuit has a multi-collector structure or a multi-drain structure, and one end thereof is connected to the gate terminal of the upper arm side device. As a result, the lower arm side device also serves as an element for preventing arm short circuit, and an element for preventing arm short circuit arranged in parallel with the lower arm side device can be removed. Therefore, this method not only prevents arm short-circuiting but also reduces the area occupied by the output stage circuit.
[0081]
As for the problem of the upper arm side device drive circuit, a simple drive circuit can be configured by applying a p-channel device having a high breakdown voltage to this drive circuit.
The current consumption of the level shift circuit can be reduced by connecting a high resistance for current limiting to the drain side of the high voltage n-channel MOSFET constituting the level shift circuit. It can also be achieved by incorporating a constant current circuit including a high breakdown voltage n-channel MOSFET and a mirror circuit using a device having the same structure.
[0082]
In the system incorporating the above constant current circuit, the current consumption of the upper arm side device drive circuit is reduced by reducing the channel width of the high-breakdown-voltage n-channel MOSFET connected to the output stage circuit side among the devices constituting the mirror circuit. It is possible to improve the delay time of the constant current circuit portion without increasing.
In the upper arm side device drive circuit to which the high breakdown voltage p-channel MOSFET is applied, replacing the high breakdown voltage p-channel MOSFET with a high breakdown voltage pnp transistor is also effective in preventing arm short circuit.
[Brief description of the drawings]
FIG. 1 is an output stage circuit diagram of a high withstand voltage power IC in which a high withstand voltage p-channel MOSFET is connected to an output terminal of a constant current type level shift circuit in a first embodiment of the present invention;
FIG. 2 is an output stage circuit diagram of a high breakdown voltage power IC in which a high breakdown voltage p-channel MOSFET is connected to an output terminal of a resistance division type level shift circuit in a second embodiment of the present invention;
3 is a circuit diagram in which a device on the upper arm side of the totem pole circuit of FIG. 1 is replaced with N11 which is an IGBT in the third embodiment of the present invention.
4 is a circuit diagram in which the device on the lower arm side of the totem pole circuit of FIG. 1 is replaced with N21 which is an IGBT in the fourth embodiment of the present invention.
5 is a circuit diagram in which a constant current type level shift circuit 1a is applied and a device on the upper arm side and a device on the lower arm side of the totem pole circuit in FIG. 1 are replaced with IGBTs in a fifth embodiment of the present invention.
FIG. 6 is a totem pole circuit diagram in which arm short circuit is prevented in the sixth embodiment of the present invention;
7 is a circuit diagram in which the device on the upper arm side of the totem pole circuit of FIG. 6 is replaced with an IGBT in the seventh embodiment of the present invention.
FIG. 8 is a circuit diagram in the case where an arm short-circuit prevention device is arranged in parallel to a low voltage side high breakdown voltage n-channel MOSFET in an eighth embodiment of the present invention;
9 is a circuit diagram in which a device on the lower arm side of the totem pole circuit of FIG. 8 is replaced with an IGBT in the ninth embodiment of the present invention.
10 is a circuit diagram in which the device on the upper arm side of the totem pole circuit of FIG. 8 is replaced with an IGBT in the tenth embodiment of the present invention.
11 is a circuit diagram in which the device on the upper arm side of the totem pole circuit of FIG. 9 is replaced with an IGBT in the eleventh embodiment of the present invention.
12 is a circuit diagram in which a free-wheeling diode for reverse energization is arranged in parallel with an IGBT which is a device on the upper arm side of the totem pole circuit of FIG. 3 in the twelfth embodiment of the present invention.
13 is a circuit diagram of a thirteenth embodiment of the present invention in which a free-wheeling diode for reverse energization is arranged in parallel with an IGBT which is a device on the lower arm side of the totem pole circuit of FIG. 4;
14 is a circuit diagram in which free wheel diodes are arranged in the IGBTs of the upper and lower arms of the totem pole circuit of FIG. 5 in the fourteenth embodiment of the present invention.
15 is a circuit diagram in which a high breakdown voltage diode for reverse energization is arranged on the lower arm side of the totem pole circuit of FIG. 6 in the fifteenth embodiment of the present invention.
16 is a circuit diagram in which a high voltage diode for reverse energization is arranged on the upper and lower arm sides of the totem pole circuit of FIG. 7 in the sixteenth embodiment of the present invention.
FIG. 17 is a circuit diagram in which a reverse-wheeling freewheel diode is arranged in parallel with the IGBT on the lower arm side of the totem pole circuit of FIG. 9 in the seventeenth embodiment of the present invention;
18 is a circuit diagram in which D6, which is a free-wheeling diode for reverse energization, is arranged in parallel with N11 which is an IGBT on the upper arm side of the totem pole circuit of FIG. 10 in the eighteenth embodiment of the present invention.
19 is a circuit diagram in which a reverse-wheeling freewheel diode is arranged in the IGBT of the upper and lower arms of the totem pole circuit of FIG. 11 in the nineteenth embodiment of the present invention.
20 shows a twentieth embodiment of the present invention in which a second auxiliary high voltage n-channel MOSFET is arranged in place of the freewheel diode for reverse current conduction of the IGBT on the upper arm side in the totem pole circuit of FIG. circuit diagram
FIG. 21 is a circuit diagram showing a twenty-first embodiment of the present invention in which a second auxiliary high-breakdown-voltage n-channel MOSFET is arranged in place of a reverse-wheeling freewheel diode in the lower arm IGBT in the totem pole circuit of FIG. 13; Figure
FIG. 22 shows a case where a second auxiliary high voltage n-channel MOSFET is arranged in place of the freewheel diode arranged as a reverse current device for the upper and lower arms in the totem pole circuit of FIG. 14 in the twenty-second embodiment of the present invention. circuit diagram
23 shows a twenty-third embodiment of the present invention in which a second auxiliary high voltage n-channel MOFET is arranged in place of the freewheel diode for reverse current conduction of the IGBT on the lower arm side in the totem pole circuit of FIG. circuit diagram
24 is a circuit diagram in the case where a second auxiliary high voltage n-channel MOSFET is arranged instead of a free wheel diode for reverse energization of the upper and lower arms in the totem pole circuit of FIG. 19 in the twenty-fourth embodiment of the present invention.
FIG. 25 is a cross-sectional view of the case where the IGBT on the upper arm side of FIG. 20 and the second auxiliary high breakdown voltage n-channel MOSFET are formed in one semiconductor region on a dielectric isolation substrate using an SOI substrate.
26 is a diagram obtained by simulation of the current distribution of the device shown in FIG. 25 when forward bias is conducted, where (a) is a hole current distribution diagram, and (b) is an electron current distribution diagram.
FIG. 27 is an output stage circuit diagram of a high withstand voltage power IC adopting a multi-collector structure in the lower arm IGBT in the twenty-fifth embodiment of the present invention;
28 is a perspective view of a cross-sectional structure of a lateral IGBT having the multi-collector structure of FIG. 27 in the twenty-sixth embodiment of the present invention.
29 is a plan view of an electrode pattern in the device of FIG. 28.
FIG. 30 is a circuit diagram in which a high breakdown voltage n-channel MOSFET having a multi-drain structure is applied to a lower arm side device of a totem pole circuit in a twenty-seventh embodiment of the present invention.
FIG. 31 is a circuit diagram of the twenty-eighth embodiment of the present invention, in which P1 which is a high breakdown voltage p-channel MOSFET in the circuit of FIG. 27 is replaced with P11 which is a high breakdown voltage pnp transistor in the circuit of FIG.
FIG. 32 is a circuit diagram in which a constant current circuit including a mirror circuit using a device N31 having the same breakdown voltage structure as N3 is connected to the previous stage of the upper arm side device drive circuit in the 29th embodiment of the present invention;
FIG. 33 is an arm short circuit prevention circuit diagram according to the thirtieth embodiment of the present invention.
FIG. 34 is an output stage circuit diagram of a high voltage IC including a conventional totem pole circuit.
FIG. 35 is an output stage circuit diagram of a high voltage IC including a conventional push-pull circuit.
[Explanation of symbols]
N1 high voltage n-channel MOSFET
N11 IGBT
N12 high voltage n-channel MOSFET
N2 high voltage n-channel MOSFET
N21 IGBT
N22 high voltage n-channel MOSFET
N23 High voltage n-channel MOSFET
N24 IGBT
N3 high voltage n-channel MOSFET
N31 High voltage n-channel MOSFET
N4 high voltage n-channel MOSFET
N5 low breakdown voltage n-channel MOSFET
N6 high voltage n-channel MOSFET
N71 Multi-drain structure high breakdown voltage n-channel MOSFET
N81 Multi-drain structure high voltage IGBT
P1 High voltage p-channel MOSFET
P2 Low voltage p-channel MOSFET
P3 Low voltage p-channel MOSFET
P4 High voltage p-channel MOSFET
P11 pnp transistor
R1 resistor
R2 resistor
R3 resistor
R4 resistor
R5 resistor
R6 resistor
D1 Protection diode
D2 Protection diode
D3 First auxiliary diode
D4 Second auxiliary diode (freewheel diode)
D5 Parasitic diode
D6 Freewheel diode
D7 Parasitic diode
D8 Parasitic diode
D9 Parasitic diode
VDH High voltage side power supply
VDL low voltage side power supply
External power supply for VL level shift circuit
IN1 Upper arm side input terminal
IN2 Lower arm input terminal
OUT output terminal
INV1 Inverter 1
INV2 Inverter 2
1a Constant current type level shift circuit
1b Resistance division type level shift circuit
1c Conventional level shift circuit
1d Upper arm device drive circuit
2a Totem pole circuit
2b Totem pole circuit
2c Totem pole circuit
2d push-pull circuit
3 First or second conductivity type semiconductor substrate
3f Constant current circuit including mirror circuit
4 Bonded oxide film
5 First conductivity type substrate
50 bonded substrates
6 Second conductivity type base region
7 Second conductivity type contact area
8a First conductivity type source region
8b First conductivity type emitter region
9 Emitter electrode
10 Gate electrode
11 First conductivity type buffer region
12 First conductivity type drain region
13 Second conductivity type collector region
14a Drain electrode
14b Collector electrode
15 Side wall oxide film
16 Polycrystalline semiconductor
17 Trench isolation region
ih hole current
ie electronic current
21, 23-25, 32, 34, 48 Gate
27, 28, 30, 33, 36, 40, 46, 61 Drain section
22, 22a, 29, 29a, 38, 42, 47 Source part
26 Output unit of level shift circuit
31 connection points
35, 39, 43, 45 Cathode
36, 40 Collector section
37, 41, 44 Anode section
38, 42 Emitter
100 Emitter (source) region
101 Drain region
102 Collector area
110 MOSFET region
111 IGBT region
201 First conductivity type substrate
202 Base area
203 Source area
204 Contact area
205 Buffer area
206 Main collector area
266 Auxiliary collector area
207 Emitter electrode
208 Gate electrode
209 Main collector electrode
299 Auxiliary collector electrode
CM terminal Main collector terminal
CS terminal Auxiliary collector terminal
DM terminal Main drain terminal
DS terminal Auxiliary drain terminal

Claims (11)

A totem pole circuit in which the source portion of the high-voltage n-channel MOSFET on the high potential side and the drain portion of the high-voltage n-channel MOSFET on the low potential side are connected, and the connection point serves as an output terminal. In the output stage circuit of the high breakdown voltage power IC in which the high breakdown voltage n-channel MOSFET on the side is driven, the output portion of the level shift circuit and the gate portion of the high breakdown voltage p channel MOSFET are connected, and the high breakdown voltage n channel MOSFET on the high potential side The first resistor is connected between the gate portion of the MOSFET and the drain portion of the high breakdown voltage p-channel MOSFET, the source portion of the high breakdown voltage p-channel MOSFET is connected to the high potential side of the power source, and the high breakdown voltage n channel on the high potential side The gate portion of the MOSFET is connected to one end of the second resistor and the cathode portion of the diode, and the high breakdown voltage n-char on the high potential side is connected. The source of the Le MOSFET and the anode of the other end and the diode of the second resistor is connected, the multi-drain of the n-channel MOSFET on the low potential side is two independent first drain portion and the second drain portion A first drain portion that is formed in the drain portion and that flows a main current is connected to a source portion of a high-voltage side high-voltage n-channel MOSFET, and a second drain portion that flows a portion of the main current is a high-potential side n-channel MOSFET An output stage circuit of a high withstand voltage power IC, characterized by being connected to the gate portion of A totem pole circuit in which the source portion of the high-voltage n-channel MOSFET on the high potential side and the drain portion of the high-voltage n-channel MOSFET on the low potential side are connected, and the connection point serves as an output terminal. In the output stage circuit of the high breakdown voltage power IC in which the high breakdown voltage n-channel MOSFET on the side is driven, the output portion of the level shift circuit and the gate portion of the high breakdown voltage p channel MOSFET are connected, and the high breakdown voltage n channel MOSFET on the high potential side And the drain portion of the high breakdown voltage p-channel MOSFET are directly connected, the source portion of the high breakdown voltage p-channel MOSFET is connected to the high potential side of the power supply, and the gate portion of the high breakdown voltage n-channel MOSFET One end of the two-resistor and the cathode part of the diode are connected, and a high-voltage n-channel MOSF on the high potential side The source part of T is connected to the other end of the second resistor and the anode part of the diode, and the drain part of the n-channel MOSFET on the low potential side is two independent multi-drains of the first drain part and the second drain part. The first drain part for flowing the main current is connected to the source part of the high-voltage side high-breakdown-voltage n-channel MOSFET, and the second drain part for flowing a part of the main current is connected to the high-potential-side n-channel MOSFET. An output stage circuit of a high voltage power IC characterized by being connected to a gate portion. 3. The output circuit of a high voltage power IC according to claim 1, wherein the high voltage p channel MOSFET is replaced with a high voltage pnp transistor. 3. The output stage circuit of a high withstand voltage power IC according to claim 1, wherein the high potential side n channel MOSFET is replaced with an n channel IGBT and a free wheel diode. The low-potential-side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode, and the collector of the n-channel IGBT is composed of two independent first collector sections and multi-collector sections of the second collector section, and allows the main current to flow. The first collector portion is connected to the source portion of the high-voltage side high-breakdown-voltage n-channel MOSFET, and the second collector portion for passing a part of the main current is connected to the gate portion of the high-potential-side n-channel MOSFET. The output stage circuit of the high withstand voltage power IC according to claim 1 or 2. The high-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode, and the low-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode. The first collector portion is composed of a multi-collector portion of one collector portion and a second collector portion, and the first collector portion for flowing the main current is connected to the emitter portion of the high-voltage n-channel IGBT on the high potential side, and the second portion for flowing a part of the main current. 3. The output stage circuit of a high withstand voltage power IC according to claim 1, wherein the collector portion is connected to the gate portion of the n-channel IGBT on the high potential side. The low-side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode,
The n-channel IGBT on the low potential side
A base region of the second conductivity type formed on the surface layer of the first conductivity type substrate, a source region and a second conductivity type contact region of the first conductivity type formed on the surface layer of the base region, and a source region and a contact An emitter electrode in contact with the region; a gate electrode formed on the base region sandwiched between the source region and the substrate via a gate insulating film; and a first layer formed on the surface layer of the substrate apart from the base region. A conductivity type buffer region, a second conductivity type main collector region and a second conductivity type auxiliary collector region formed at a predetermined distance in the buffer region, a main collector electrode in contact with the main collector region, and an auxiliary An auxiliary collector electrode in contact with the collector region, the main collector electrode is connected to the source portion of the high-voltage n-channel MOSFET on the high potential side, and the auxiliary collector electrode is on the high potential side An output stage circuit of the high voltage power IC according to claim 1, wherein in that connected to the gate portion of the channel MOSFET. The high-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode, and the low-potential side n-channel MOSFET is replaced with an n-channel IGBT and a freewheel diode;
The n-channel IGBT on the low potential side
A base region of the second conductivity type formed on the surface layer of the first conductivity type substrate, a source region and a second conductivity type contact region of the first conductivity type formed on the surface layer of the base region, and a source region and a contact An emitter electrode in contact with the region; a gate electrode formed on the base region sandwiched between the source region and the substrate via a gate insulating film; and a first layer formed on the surface layer of the substrate apart from the base region. A conductivity type buffer region, a second conductivity type main collector region and a second conductivity type auxiliary collector region formed at a predetermined distance in the buffer region, a main collector electrode in contact with the main collector region, and an auxiliary An auxiliary collector electrode in contact with the collector region, the main collector electrode is connected to the emitter portion of the high breakdown voltage n-channel IGBT on the high potential side, and the auxiliary collector electrode is n on the high potential side An output stage circuit of the high voltage power IC according to claim 1, wherein in that connected to the gate of the Yaneru IGBT. 3. The output of a high voltage power IC according to claim 1, wherein the level shift circuit has a current limiting high resistance connected in series to the drain of the high voltage n-channel MOSFET constituting the circuit. Stage circuit. 3. The constant shift circuit according to claim 1, wherein the level shift circuit has a constant current circuit including a mirror circuit composed of a high breakdown voltage n-channel MOSFET and another high breakdown voltage n-channel MOSFET having the same breakdown voltage structure as the MOSFET. Output circuit of high voltage power IC. The level shift circuit has a constant current circuit including a mirror circuit composed of a high breakdown voltage n-channel MOSFET and another high breakdown voltage n-channel MOSFET having the same breakdown voltage structure as the MOSFET, and two high breakdown voltages constituting the mirror circuit 3. An output stage circuit for a high withstand voltage power IC according to claim 1, wherein the channel widths of the n-channel MOSFETs are different.

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