JP3518845B2 - Thermoelectric semiconductor device manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thermoelectric semiconductor element, and more particularly to a method for manufacturing a thermoelectric semiconductor element in which a heat radiating side and a heat absorbing side are thermally insulated by a partition plate.

[0002]

2. Description of the Related Art A thermoelectric semiconductor element using a thermoelectric semiconductor made of a compound such as bismuth / tellurium type, iron / silicide type or cobalt / antimony type is used in a cooling / heating device. These thermoelectric elements are useful as a cooling / heating source that does not use liquid or gas, does not take up space, does not wear due to rotation, and does not require maintenance.

FIG. 15 shows the structure of a generally known general thermoelectric module. Here, FIG. 15A is a front view and FIG. 15B is a perspective view. As shown in these figures, in the conventional thermoelectric module, thermoelectric semiconductors composed of n-type thermoelectric semiconductors and p-type thermoelectric semiconductors are alternately arranged, and the upper surface and the lower surface of the thermoelectric semiconductors are bonded to the metal electrodes, respectively. Has been done. The thermoelectric semiconductors are alternately joined to the metal electrodes on the upper surface and the lower surface, and finally all the thermoelectric semiconductors are electrically connected in series. The upper and lower metal electrodes are joined to the thermoelectric semiconductor by soldering. And
The metal electrodes on the upper surface and the lower surface are bonded to a metallized ceramic substrate and fixed as a whole with a rigid body.

When a direct current power supply is connected to the electrodes of this thermoelectric module and a current is passed from the n-type thermoelectric semiconductor to the p-type thermoelectric semiconductor, heat absorption occurs at the upper part of the π type due to the Peltier effect and heat dissipation occurs at the lower part. . That is, as shown in FIG. 15A, the upper part of the thermoelectric semiconductor is the heat absorption side (cold junction) and the lower part is the heat dissipation side (hot junction).
Junction). At this time, if the connection direction of the power source is reversed, the directions of heat absorption and heat dissipation change. Utilizing this phenomenon, the thermoelectric module is used in a cooling / heating device. Thermoelectric modules have a wide range of applications from cooling LSIs (large-scale integrated circuits), CPUs (central processing units) of computers, lasers, etc. to heat insulation refrigerators.

However, in the thermoelectric module having such a structure, convection of heat occurs between the heat radiating side and the heat absorbing side, so that the cooling efficiency is lowered. On the other hand, for example, the thermoelectric module disclosed in Japanese Utility Model Publication No. 38-27922, Japanese Patent Publication No. 48-32942, etc., because the thermoelectric semiconductor is fitted into the plate or frame having heat insulation,
It is possible to prevent heat convection between the heat radiating side and the heat absorbing side and prevent the cooling efficiency from decreasing.

[0006]

However, in order to manufacture a thermoelectric module in which a thermoelectric semiconductor is embedded in a plate or frame having the above-mentioned heat insulating property, one thermoelectric semiconductor is placed in the hole of the plate or frame having the heat insulating property. It was not suitable for mass production because it required a work of fitting each one. In addition, the thermoelectric semiconductor is manufactured by a method of slicing an ingot-shaped crystal into a disk shape, and dicing the disk to manufacture a cubic thermoelectric semiconductor having a side of 1 to 3 mm. Therefore, slicing was required three times, and the number of manufacturing steps was large.

The present invention has been made in view of such problems, and mass production of thermoelectric semiconductor elements suitable for use in a thermoelectric module in which a heat radiating side and a heat absorbing side are thermally insulated by a partition plate. A method for manufacturing a thermoelectric semiconductor device is provided.

[0008]

The above-mentioned object of the present invention is to provide a plurality of n-types each having at least one tip formed thin, having a constant crystal orientation, and having an a-axis orientation.
-Type and p-type thermoelectric semiconductor acicular single crystals, a plurality of partition plates having a plurality of holes and having electrical insulation properties and poor thermal conductivity, and an assembly capable of inserting these partition plates in parallel with each other Using a jig, the step of inserting the plurality of partition plates into the assembly jig, and the step of inserting the plurality of thermoelectric semiconductor needle-shaped single crystals into the opposing holes of the plurality of partition plates, A step of adhering the plurality of partition plates and the plurality of thermoelectric semiconductor needle-shaped single crystals, and cutting the plurality of thermoelectric semiconductor needle-shaped single crystals in a direction orthogonal to the longitudinal direction between the plurality of partition plates. A method of manufacturing a thermoelectric semiconductor element, the method including: a plurality of partition plates and the plurality of partition plates.
The step of adhering the thermoelectric semiconductor needle-shaped single crystal of
Assemble the jig in an assembly jig container that can store the jig.
After storing the jig, fill the assembly jig container with adhesive.
Then remove excess adhesive from inside the assembly jig container.
This can be solved by a method for manufacturing a thermoelectric semiconductor element, which has the following steps .

According to the method of manufacturing a thermoelectric semiconductor element of the present invention, a thermoelectric semiconductor needle-shaped single crystal is inserted into a hole of a partition plate and cut after being bonded instead of fitting a small piece of the thermoelectric semiconductor into the partition plate. Therefore, mass production is easy. Further, since the cutting (slicing) process is performed only once, the number of manufacturing processes is small. Furthermore, since the thermoelectric semiconductor acicular single crystal has a constant crystal orientation and a-axis orientation, it does not break or chip when it is inserted into the hole of the partition plate and when it is cut. Moreover, since the tip is formed thin, the operation of inserting it into the hole of the partition plate is easy. Furthermore, the thermoelectric semiconductor needle-shaped single crystal is used as a hole in the partition plate.
When bonding, store in the assembly jig container and
Fill the inside of the container with adhesive, and then fill the excess adhesive
Since it is removed from the vertical jig container, the minimum necessary adhesive is used.
Only the required part can be fixed.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 shows an example of the structure of a thermoelectric semiconductor device manufactured according to the present invention. Here, FIG. 1A is a plan view and FIG. 1B is a sectional view taken along the line AA in FIG.

The thermoelectric semiconductor element 1 has a cylindrical p-shape.
The type thermoelectric semiconductor 3A and the n-type thermoelectric semiconductor 3B are fixed in a state of penetrating the substantially square partition plate 2. The partition plate 2 is made of, for example, a material having a thickness of about 0.3 to 0.6 mm and having electrical insulating properties, poor thermal conductivity and heat resistance, such as glass epoxy. The p-type thermoelectric semiconductor 3A and the n-type thermoelectric semiconductor 3B each have, for example, a cross-sectional area of 1.7 to 5.0.
It is a cylindrical bismuth-tellurium-based thermoelectric semiconductor single crystal having a length of about mm ² and a length of about 1.5 to ² mm, and protrudes on both sides of the partition plate 2 by about 0.5 to 0.7 mm. The p-type thermoelectric semiconductors 3A and the n-type thermoelectric semiconductors 3B are alternately arranged in a matrix. Although a 4 × 4 matrix-like array is shown here for convenience, a large number (16 × 1) is actually used.
6, 24 × 24, etc.) thermoelectric semiconductor single crystals can be arranged, and a large-area thermoelectric semiconductor element can be manufactured.

FIG. 2 is a plan view of another example of the structure of the thermoelectric semiconductor device manufactured according to the present invention. In this thermoelectric semiconductor element, instead of the thermoelectric semiconductor element, dummy elements made of a metal such as copper or a material equivalent to the partition plate 2 are fixed to both ends of the bottom row of the matrix array. With this configuration, when a thermoelectric module is manufactured using this thermoelectric semiconductor element, the lead terminals can be soldered or adhered to the dummy element to complement the strength of the soldering between the lead terminals and the thermoelectric semiconductor. it can.

Next, materials and jigs necessary for manufacturing such a thermoelectric semiconductor element will be described.

FIG. 3 shows a p-type thermoelectric semiconductor acicular single crystal 11 and an n-type thermoelectric semiconductor acicular single crystal 12. These thermoelectric semiconductor needle-shaped single crystals 11 and 12 have a circular cross section, and are formed in a substantially hemispherical taper so that both ends are thin. Further, the directionality of the crystal is constant and a-axis oriented, that is, the longitudinal direction (growth direction) of the crystal and the a-axis direction coincide with each other. As described above, in a single crystal in which the orientation of the crystal is constant and the a-axis is oriented, the cleavage plane is in the longitudinal direction of the crystal as shown in FIG. On the other hand, when the direction of the a-axis is tilted with respect to the longitudinal direction of the crystal, division or damage is unlikely to occur. The thermoelectric semiconductor needle-shaped single crystals 11 and 12 having such characteristics are prepared in the number required for one thermoelectric semiconductor element.

FIG. 5 is a perspective view of the perforated partition plate. The perforated partition plate 21 is made of, for example, a material having a thickness of about 0.3 to 0.6 mm, which has electrical insulation properties, heat failure conductivity, and heat resistance. Then, a large number (4 × 4 = 16 in the drawing) of circular holes are arranged in a matrix. The diameter of the circular hole allows the thermoelectric semiconductor needle-shaped single crystals 11 and 12 to pass therethrough, so that an adhesive enters and is bonded between the inside of the hole and the surface of the thermoelectric semiconductor needle-shaped single crystals 11 and 12, The diameter is set larger than the diameter of the thermoelectric semiconductor needle-shaped single crystals 11 and 12. In addition, a notch 23 is formed at one of the corners of the rectangle.

FIG. 6 is a perspective view of the assembly jig. Assembly jig
The reference numeral 31 is, for example, a rectangular iron thin plate having a thickness of about 0.5 mm and formed in a substantially U-shape. As shown in this figure,
Both side surfaces and the bottom surface of the assembly jig 31 are respectively bent at two locations inside the U-shape, and a large number (13 in FIG.
Side slits 32 and bottom slits 33 are formed, for example, but dozens are actually formed at intervals of 2-3 mm, for example. The side surface slits 32 and the bottom surface slits 33 are formed in parallel at the intervals described above, and a pair of side surface slits 32 and one bottom surface slit are opposed to each other.
The size of the U-shape and the position and size of each slit are determined so that both end surfaces and the lower end surface of the perforated partition plate 21 can be fitted into the 33. Further, the upper end of the side surface of the assembly jig 31 is bent outward in a U-shape to form an elongated flat surface 34. The assembly jig 31 first forms the side slits 32 and the bottom slits 33 by etching or punching the surface of the thin iron plate, and then bends the thin iron plate by machining to produce a large amount at low cost. Can be produced.

FIG. 7 is a perspective view of an assembly jig container for housing the assembly jig. This assembly jig container 41 is formed in a box shape from a stainless plate or a Teflon-based material.

Next, a method of manufacturing a thermoelectric semiconductor element using the materials and jigs having the above-mentioned structures will be described.

First, all side slits 32 of the assembly jig 31.
And insert the perforated partition plate 21 into the bottom slit 33. In this embodiment, 13 perforated partition plates 21 are fitted. At this time, the notch 23 is fitted so that it is located at the upper end. Then
So that it penetrates through the opposing holes 22 of all the perforated partitions 21,
A p-type thermoelectric semiconductor acicular single crystal 11 and an n-type thermoelectric semiconductor acicular single crystal 12 are inserted. At this time, the p-type thermoelectric semiconductor needle single crystal 11 and the n-type thermoelectric semiconductor needle single crystal 12 are inserted in the pattern shown in FIG. The state after the above steps is shown in FIG. However, here, for convenience, a perforated partition plate
21 shows only two sheets at both ends, and the thermoelectric semiconductor needle single crystal is the second n-type thermoelectric semiconductor needle single crystal from the left in the top row.
Only 12 is shown. In the present embodiment, the p-type thermoelectric semiconductor acicular single crystal 11 and the n-type thermoelectric semiconductor acicular single crystal 12 have constant crystal orientation and are a-axis oriented, and the tip is tapered. The needle-shaped single crystal can be easily inserted into the hole 22 of the perforated partition plate 21 without damaging it. The tips of the p-type thermoelectric semiconductor acicular single crystal 11 and the n-type thermoelectric semiconductor acicular single crystal 12 are not limited to the substantially hemispherical shape, and may be tapered so as to gradually become thinner.

Next, as shown in FIG. 9, a perforated partition plate 21
An assembling jig 31 in which the p-type thermoelectric semiconductor acicular single crystal 11 and the n-type thermoelectric semiconductor acicular single crystal 12 are set is housed in an assembling jig container 41. At this time, the pair of elongated flat surfaces 34 of the assembly jig 31 come into contact with the two opposing surfaces 42, 42 of the upper end of the assembly jig container 41. FIG. 10 is a sectional view of the assembly jig 31 housed in the assembly jig container 41.

Next, after filling the inside of the assembly jig container 41 with an adhesive such as polyimide, the adhesive is removed from the inside of the assembly jig container 41. As a result, as shown in FIG. 11, the minimum necessary adhesive agent 51 remains between the perforated partition plate 21 and the thermoelectric semiconductor needle-shaped single crystal (n-type thermoelectric semiconductor needle-shaped single crystal 12). Become.

The assembly jig 31 is taken out of the assembly jig container 41 before the adhesive is solidified. Then, after the adhesive is solidified, as shown in the perspective view of FIG. 12 (a) and the sectional view of FIG. 12 (b), it is assembled with a wire saw or the like at an intermediate position between adjacent perforated partition plates 21. Cut the tool 31. As described above, since the thermoelectric semiconductor acicular single crystal crystals 11 and 12 have a constant crystal orientation and a-axis orientation, division and damage are unlikely to occur during this cutting.

By this cutting, the thermoelectric semiconductor element 1 sandwiched by the cutting pieces 31A of the assembly jig 31 as shown in FIG.
There can create dozens at the same time. The thermoelectric semiconductor element 1 can be easily separated by expanding both sides of the upper end of the cut piece 31A. By washing the thermoelectric semiconductor element 1 after separation, a large number of thermoelectric semiconductor elements 1 shown in FIG. 1 can be obtained at the same time. When manufacturing a thermoelectric semiconductor element having a dummy element as shown in FIG. 2, in the step shown in FIG. 8, the bottom row of the holes 22 arranged in a matrix on the perforated partition plate 21 is manufactured. Rods made of copper or the like may be inserted into the holes at both ends instead of the thermoelectric semiconductor acicular single crystal.

The electrodes 4 and 5 are soldered to the upper and lower surfaces of the p-type thermoelectric semiconductor element 3A and the n-type thermoelectric semiconductor element 3B in the thermoelectric semiconductor element manufactured by the steps described above, thereby obtaining the cross section of FIG. 14 (a). A double-sided skeleton type thermoelectric module as shown in the figure can be manufactured. Similarly, the p-type thermoelectric semiconductor element 3A, the n-type thermoelectric semiconductor element 3B, and the dummy element 3C in the thermoelectric semiconductor element having the dummy element manufactured by the steps described above are used.
By soldering the electrodes 4 and 5 to the upper and lower surfaces of the dummy element, as shown in the sectional view of FIG.
It is possible to manufacture a double-sided skeleton type thermoelectric module having 3C. At the time of this soldering, since the upper and lower surfaces of the p-type thermoelectric semiconductor element 3A and the n-type thermoelectric semiconductor element 3B project from the partition plate 2, it is possible to prevent a state where adjacent electrodes are short-circuited by excess solder. The solderability is improved. In addition, p-type thermoelectric semiconductor elements 3A and n
Since the thermoelectric semiconductor element 3B is fixed by the partition plate 2, it is easy to handle when manufacturing the thermoelectric module,
This is effective for increasing the size of the skeleton type thermoelectric module.

In the above description, the case where the p-type thermoelectric semiconductor needle-shaped single crystal 11 and the n-type thermoelectric semiconductor needle-shaped single crystal 12 have a circular cross section has been described. It may be a polygon such as or a hexagon. Further, at least one tip of the p-type thermoelectric semiconductor acicular single crystal 11 and the n-type thermoelectric semiconductor acicular single crystal 12 may be thin.

As described above, in the embodiment of the present invention, p
Type thermoelectric semiconductor needle-shaped single crystal 11 and n-type thermoelectric semiconductor needle-shaped single crystal 12 have a uniform crystal orientation and are a-axis oriented, and have a substantially hemispherical taper at the tip. The single crystal can be easily inserted into the hole 22 of the plate 21 without damaging it. Further, since the notch 23 for positioning is provided on the perforated partition plate 21, the perforated partition plate 21 can be used as an assembly jig.
When it is inserted into the slit of 31, the thermoelectric semiconductor needle-like single crystal can be arrayed with the notch 23 as a reference. Further, the assembly jig 31 can be mass-produced at low cost because it can be manufactured simply by etching or punching a thin iron plate to form a slit and then bending it. Further, it is possible to fix only a necessary portion with the minimum necessary adhesive. Further, since the p-type thermoelectric semiconductor element 3A and the n-type thermoelectric semiconductor element 3B are fixed by the partition plate 2, it is easy to handle when manufacturing the thermoelectric module, and it is effective for increasing the size of the skeleton type thermoelectric module. .

[0028]

As described in detail above, according to the present invention, a large number of thermoelectric semiconductor elements are simultaneously manufactured by inserting a thermoelectric semiconductor needle-shaped single crystal into a hole of a partition plate, adhering and cutting the same. be able to. Moreover, since the cutting process is performed only once, the number of manufacturing steps is reduced. Further, since the thermoelectric semiconductor acicular single crystal has a constant crystal orientation and a-axis orientation,
Do not break or chip when inserting into the holes in the partition plate and when cutting. Further, since the tip is formed thin, it can be easily inserted into the hole of the partition plate. In addition, thermoelectric
Assembly when bonding semiconductor needle-shaped single crystals to the holes in the partition plate
Store in the jig container and fill the assembly jig container with adhesive.
Then, remove the excess adhesive from the assembly jig container.
Therefore, fix only the necessary parts with the minimum necessary adhesive.
You can Therefore, according to the present invention, it is possible to mass-produce a thermoelectric semiconductor element whose heat radiating side and heat absorbing side are thermally insulated by the partition plate at low cost.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of the configuration of a thermoelectric semiconductor element manufactured according to the present invention.

FIG. 2 is a diagram showing another example of the configuration of the thermoelectric semiconductor element manufactured according to the present invention.

FIG. 3 is a diagram showing a thermoelectric semiconductor acicular single crystal according to an embodiment of the present invention.

FIG. 4 is a diagram for explaining the characteristics of a thermoelectric semiconductor acicular single crystal according to an embodiment of the present invention.

FIG. 5 is a diagram showing a perforated partition plate according to the embodiment of the present invention.

FIG. 6 is a diagram showing an assembly jig in the embodiment of the present invention.

FIG. 7 is a diagram showing an assembly jig container in the embodiment of the present invention.

FIG. 8 is a view showing a state in which a perforated partition plate and a thermoelectric semiconductor acicular single crystal are set in an assembly jig.

FIG. 9 is a view showing a state in which an assembly jig in which a partition plate with holes and a thermoelectric semiconductor acicular single crystal are set is housed in an assembly jig container.

FIG. 10 is a cross-sectional view showing a state in which an assembly jig in which a perforated partition plate and a thermoelectric semiconductor needle single crystal are set is housed in an assembly jig container.

FIG. 11 is a diagram showing a state of adhesion of an adhesive between a perforated partition plate and a thermoelectric semiconductor acicular single crystal.

FIG. 12 is a diagram showing a state of cutting a thermoelectric semiconductor acicular single crystal.

FIG. 13 is a view showing a thermoelectric semiconductor element obtained as a result of the above cutting.

FIG. 14 is a cross-sectional view showing a thermoelectric module using a thermoelectric semiconductor element manufactured according to the present invention.

FIG. 15 is a diagram showing a conventional general thermoelectric module.

[Explanation of symbols]

11 p-type thermoelectric semiconductor acicular single crystal 12 n-type thermoelectric semiconductor acicular single crystal 21 perforated divider 22 holes 31 Assembly jig 32, 33 slits 41 Assembly jig container

Front page continuation (72) Inventor Nobuyuki Shiose 9-8-6 Kawabe, Ome City, Tokyo No. 506 Family Kawabe (56) References JP-A-8-228027 (JP, A) (58) Fields investigated (Int .Cl. ⁷ , DB name) H01L 35/34 H01L 35/16 H01L 35/32

Claims (4)

(57) [Claims] 1. A plurality of acicular single crystal n-type and p-type thermoelectric semiconductors, each of which has at least one tip thinly formed, has a constant crystal orientation, and has a-axis orientation, and a plurality of holes. By using a plurality of opened partition plates having electrical insulation and thermal conductivity, and an assembly jig capable of inserting these partition plates in parallel with each other, the plurality of partition plates are assembled and repaired. A step of inserting into a tool, a step of inserting the plurality of thermoelectric semiconductor needle-shaped single crystals into the opposite holes of the plurality of partition plates, the plurality of partition plates and the plurality of thermoelectric semiconductor needle-shaped single crystals A method of manufacturing a thermoelectric semiconductor element, comprising a step of adhering a crystal, and a step of cutting the plurality of thermoelectric semiconductor acicular single crystals in a direction orthogonal to a longitudinal direction between the plurality of partition plates , wherein In front of the plurality of partition plates
The step of adhering a plurality of thermoelectric semiconductor needle-shaped single crystals,
In an assembly jig container that can store the assembly jig
After storing the assembly jig, glue inside the assembly jig container
Agent and then add excess adhesive in the assembly jig container.
Thermoelectric semiconductor element having a step of removing
Child manufacturing method. 2. The assembly jig is made of a metal plate and is substantially U-shaped.
And a plurality of slits that are parallel to each other on the inner wall surface
Are provided, and the partition plate is inserted into those slits.
The manufacture of the thermoelectric semiconductor device according to claim 1, wherein
Method. 3. The slit is etched or punched
It is formed by the following.
A method for manufacturing the thermoelectric semiconductor element according to claim 1. 4. A positioning cut is provided at one of the corners of the partition plate.
A notch is provided, and this notch inserts it into the assembly jig.
The heat according to claim 1, characterized in that the direction of entry is determined.
Method for manufacturing electronic semiconductor device.