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JP3569090B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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Publication number
JP3569090B2
JP3569090B2 JP30139996A JP30139996A JP3569090B2 JP 3569090 B2 JP3569090 B2 JP 3569090B2 JP 30139996 A JP30139996 A JP 30139996A JP 30139996 A JP30139996 A JP 30139996A JP 3569090 B2 JP3569090 B2 JP 3569090B2
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JP
Japan
Prior art keywords
electrode
plasma processing
strip
processing apparatus
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP30139996A
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Japanese (ja)
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JPH10144495A (en
Inventor
尚志 堀
一人 大淵
淳 松下
薫 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP30139996A priority Critical patent/JP3569090B2/en
Priority to KR1019970005430A priority patent/KR100275597B1/en
Priority to US08/805,062 priority patent/US5846329A/en
Priority to TW086106910A priority patent/TW341720B/en
Publication of JPH10144495A publication Critical patent/JPH10144495A/en
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Publication of JP3569090B2 publication Critical patent/JP3569090B2/en
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は半導体ウェーハ等の表面に形成した被膜をエッチングしたり、ホトレジスト膜をアッシング除去したり、デポジション等に用いるプラズマ処理装置に関する。
【0002】
【従来の技術】
半導体ウェーハ表面の被膜をエッチング等するプラズマ処理装置として、石英等からなるチャンバーの外周に、高周波電源に接続される第1の電極と、この電極との間でプラズマを発生する第2の電極を対峙させて設けたものが知られている。
【0003】
ここで、プラズマ処理装置にあって、主としてプラズマが発生する箇所は、第1の電極と第2の電極とが最も接近した箇所であり、上述した従来のプラズマ処理装置にあっては、電極の形状が半割筒状をなしているので、プラズマが発生する箇所は、チャンバーに沿って上下方向に伸びる2本の線状領域となる。
【0004】
そして、プラズマの発生領域が2本の線状領域であると、チャンバー内で発生するプラズマが均一にならないので、特開平6−132250号公報或いは特開平8−130185号公報に開示される構造のものがある。
特開平6−132250号公報に開示されるプラズマ処理装置は、第1の電極及び第2の電極の形状を櫛歯状とし、一方の凸部が他方の凹部に入り込むようにしており、特開平8−130185号公報に開示されるプラズマ処理装置は、帯状をなす第1の電極と第2の電極とを一定の間隔を開けて螺旋状にチャンバー外周に巻回している。
【0005】
【発明が解決しようとする課題】
上述した特開平6−132250号公報或いは特開平8−130185号公報に開示される電極構造とすることでチャンバー内の外周部のほぼ全域をプラズマの発生領域とすることができる。
しかしながら、いずれの先行技術にあっても、極めて薄い電極を円筒状をなすチャンバーの外周面の所定箇所に長期に亘って安定して固定しておく手段がない。特に、特開平8−130185号公報に開示されるものは、電極を帯状として螺旋状に巻回する構成となるので、電極間の間隔を一定に保つのは困難で、プラズマの発生が不均一になりやすい。
【0006】
【課題を解決するための手段】
上記課題を解決すべく本願の第1発明に係るプラズマ処理装置は、上端を閉じた略筒状をなすチャンバーの外周に、第1の電極及び第2の電極が一定の間隔をあけて螺旋状に巻回され、これら第1の電極及び第2の電極はチャンバーの外周を略半周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された一対の絶縁体に止着され、この絶縁体に設けた導体によって第1の電極を構成する帯状分割片同士及び前記第2の電極を構成する帯状分割片同士は電気的に接続された構成とした。
【0007】
また、上記課題を解決すべく本願の第2発明に係るプラズマ処理装置は、上端を閉じた略筒状をなすチャンバーの外周に、第1の電極及び第2の電極が一定の間隔をあけて螺旋状に巻回され、これら第1の電極及び第2の電極はチャンバーの外周を略1周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された1本の絶縁体に止着され、この絶縁体に設けた導体によって第1の電極を構成する帯状分割片同士及び前記第2の電極を構成する帯状分割片同士は電気的に接続された構成とした。
また、上記課題を解決すべく本願の第3発明に係るプラズマ処理装置は、上端を閉じた略筒状をなすチャンバーの外周に、電極が一定の間隔をあけて螺旋状に巻回され、これら電極はチャンバーの外周を略半周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された一対の絶縁体に止着され、この絶縁体に設けた導体によって電極を構成する帯状分割片同士は電気的に接続された構成とした。
【0008】
前記第1の電極と第2の電極の電源への接続の態様としては、第1の電極は高周波電源に接続し、第2の電極を第1の電極が接続される高周波電源よりも低周波の電源かアースに接続する態様、或いは第1の電極及び第2の電極の双方の一端(上端)を高周波電源に接続し、他端(下端)をこれよりも低周波の電源かアースに接続する態様が考えられる。
また、第3の発明にあっては、前記電極の一端(上端)は高周波電源に接続し、他端(下端)はこれよりも低周波の電源かアースに接続する態様が考えらえる。
【0009】
前記プラズマ処理装置のチャンバーは基台に形成した開口部を覆うように取り付けられ、この基台に形成した開口部には半導体ウェーハ等の被処理物を載置するテーブルが昇降可能に臨むのが一般的なプラズマ処理装置の構成である。
【0010】
また、本発明に係るプラズマ処理装置のチャンバーはベルジャー型等の上端を閉じた形状であるが、その上端部或いは上端部から若干下がった位置には反応ガスの導入管が取り付けられる。
【0011】
【発明の実施の形態】
以下に本発明の実施の形態を添付図面に基づいて説明する。ここで、図1は第1発明に係るプラズマ処理装置を分解して示した全体斜視図、図2は電極をチャンバーに取り付けた状態を示す図である。
【0012】
プラズマ処理装置1は石英等から構成されるチャンバー2を備え、その形状は上端を閉じた略筒状(ベルジャー型)をなし、上端部には反応ガス導入管3を設けている。
【0013】
チャンバー2は小径のチャンバー上部2aと大径のチャンバー下部2bから構成され、小径のチャンバー上部2aの内部をプラズマ発生空間とし、大径のチャンバー下部2bの内部を処理空間とし、大径のチャンバー下部2bは基台4に形成した開口5を覆うように基台4上に気密に固定され、開口5には被処理物であるウェーハWを載置するテーブル6が昇降自在に臨み、開口5とテーブル6との間には減圧装置につながる排気通路7が形成される。
【0014】
また、小径のチャンバー上部2aの外側の対向する位置には、アルミナや樹脂等からなる一対の柱状絶縁体8,9を上下方向に配置している。柱状絶縁体8はリブ10にて6つの止着部8a,8b,8c,8d,8e,8fに画成され、柱状絶縁体9はリブ11にて6つの止着部9a,9b,9c,9d,9e,9fに画成され、上端と下端の止着部8a,9a,8f,9fには片面1個の取り付け穴12が形成され、残りの中間の止着部8b,8c,8d,8e,9b,9c,9d,9eには片面2個の取り付け穴12が形成され、これら中間の止着部にはアルミ板や銅板等からなる導体13を嵌め付けている。
【0015】
前記各止着部には複数の帯状分割片の端部が止着されている。具体的には、帯状分割片14aの細くなった一端が止着部8aの図において背面側に、他端が導体13を嵌め付けた止着部9bの背面側にビスにて止着され、帯状分割片14bの一端が導体13を嵌め付けた止着部9bの前面側に、他端が導体13を嵌め付けた止着部8cの前面側に止着され、帯状分割片14cの一端が導体13を嵌め付けた止着部8cの背面側に、他端が導体13を嵌め付けた止着部9dの背面側に止着され、帯状分割片14dの一端が導体13を嵌め付けた止着部9dの前面側に、他端が導体13を嵌め付けた止着部8eの前面側に止着され、帯状分割片14eの一端が導体13を嵌め付けた止着部8eの背面側に、細くなった他端が止着部9fの背面側に止着されている。そして、これら帯状分割片14a,14b,14c,14d,14eは導体13にて電気的に接続され第1の電極14を構成する。
【0016】
また、帯状分割片15aの細くなった一端が止着部9aの図において前面側に、他端が導体13を嵌め付けた止着部8bの前面側に止着され、帯状分割片15bの一端が導体13を嵌め付けた止着部8bの背面側に、他端が導体13を嵌め付けた止着部9cの背面側に止着され、帯状分割片15cの一端が導体13を嵌め付けた止着部9cの前面側に、他端が導体13を嵌め付けた止着部8dの前面側に止着され、帯状分割片15dの一端が導体13を嵌め付けた止着部8dの背面側に、他端が導体13を嵌め付けた止着部9eの背面側に止着され、帯状分割片15eの一端が導体13を嵌め付けた止着部9eの前面側に、細くなった他端が止着部8fの前面側に止着されている。そして、これら帯状分割片15a,15b,15c,15d,15eは導体13にて電気的に接続され第2の電極15を構成する。
【0017】
このように第1の電極14を構成する帯状分割片14a〜14eを電気的に接続し、第2の電極15を構成する帯状分割片15a〜15eを電気的に接続することで、第1の電極14と第2の電極15は全体として、一定の間隔を保ちながら螺旋状にチャンバー2の外周に巻回される。そして、第1の電極14を高周波電源に、第2の電極15を第1の電極よりも低周波の電源かアースに接続することで主として電極間の隙間にプラズマが発生する。
【0018】
尚、実施例にあっては複数の帯状分割片のうち、上端と下端に位置する帯状分割片の形状を一端が細くなるようにしたが、全ての帯状分割片の形状を同一にすることも可能である。
【0019】
図3は第2発明に係るプラズマ処理装置を分解して示した全体斜視図、図4は電極をチャンバーに取り付けた第2図と同様の図であり、第1発明に係るプラズマ処理装置にあっては2本の柱状絶縁体を用いて帯状電極の端部を止着するようにしたが、このプラズマ処理装置にあっては、1本の柱状絶縁体16を用い、帯状分割片の両端部を止着している。
【0020】
即ち、柱状絶縁体16はリブ17にて6つの止着部16a,16b,16c,16d,16e,16fに画成され、止着部16aの背面側はリブ17aにて16a−1と16a−2に分けられ、止着部16fの前面側はリブ17bにて16f−1と16f−2に分けられている。
【0021】
そして、帯状分割片18aの細くなった一端が止着部16a−1に、他端が導体13を嵌め付けた止着部16bの前面側に止着され、帯状分割片18bの一端が導体13を嵌め付けた止着部16bの背面側に、他端が導体13を嵌め付けた止着部16dの前面側に止着され、帯状分割片18cの一端が導体13を嵌め付けた止着部16dの背面側に、細くなった他端が止着部16f−1の前面側に止着され、これら帯状分割片18a,18b,18cは導体13にて電気的に接続され第1の電極18を構成する。
【0022】
また、帯状分割片19aの細くなった一端が止着部16a−2に、他端が導体13を嵌め付けた止着部16cの前面側に止着され、帯状分割片19bの一端が導体13を嵌め付けた止着部16cの背面側に、他端が導体13を嵌め付けた止着部16eの前面側に止着され、帯状分割片19cの一端が導体13を嵌め付けた止着部16eの背面側に、細くなった他端が止着部16f−2の前面側に止着され、これら帯状分割片19a,19b,19cは導体13にて電気的に接続され第2の電極19を構成する。
【0023】
このように第1の電極18を構成する帯状分割片18a〜18cを電気的に接続し、第2の電極19を構成する帯状分割片19a〜19cを電気的に接続することで、第1の電極18と第2の電極19は全体として、一定の間隔を保ちながら螺旋状にチャンバー2の外周に巻回される。
【0024】
図5は第3発明に係るプラズマ処理装置を分解して示した全体斜視図、図6は電極をチャンバーに取り付けた第2図及び第4図と同様の図である。
第3発明に係るプラズマ処理装置は第1発明に係るプラズマ処理装置と同様に2本の柱状絶縁体を用いて帯状電極の端部を止着するようにしている。
【0025】
即ち、柱状絶縁体20はリブ22にて5つの止着部20a,20b,20c,20d,20eに画成され、柱状絶縁体21はリブ23にて6つの止着部21a,21b,21c,21d,21e,21fに画成され、柱状絶縁体21の上端と下端の止着部21a,21fには片面1個の取り付け穴24が形成され、残りの止着部20a,20b,20c,20d,20e,21b,21c,21d,21eには片面2個の取り付け穴24が形成され、これら中間の止着部にはアルミ板や銅板等からなる導体13を嵌めつけている。
【0026】
具体的には帯状分割片25aの細くなった一端が止着部20aの図において前面側に、他端が導体13を嵌め付けた止着部21aの前面側に止着され、帯状分割片25bの一端が導体13を嵌め付けた止着部20aの背面側に、他端が導体13を嵌め付けた止着部21bの背面側に止着され、帯状分割片25cの一端が止着部21bの前面側に、他端が導体13を嵌め付けた止着部20bの前面側に止着され、帯状分割片25dの一端が導体13を嵌め付けた止着部20bの背面側に、他端が導体13を嵌め付けた止着部21cの背面側に止着され、帯状分割片25eの一端が止着部21cの前面側に、他端が導体13を嵌め付けた止着部20cの前面側に止着され、帯状分割片25fの一端が導体13を嵌め付けた止着部20cの背面側に、他端が導体13を嵌め付けた止着部21dの背面側に、止着され、帯状分割片25gの一端が止着部21dの前面側に、他端が導体13を嵌め付けた止着部20dの前面側に止着され、帯状分割片25hの一端が導体13を嵌め付けた止着部20dの背面側に、他端が導体13を嵌め付けた止着部21eの背面側に止着され、帯状分割片25iの一端が止着部21eの前面側に、他端が導体13を嵌め付けた止着部20eの前面側に止着され、帯状分割片25jの一端が導体13を嵌め付けた止着部20eの背面側に、細くなった他端が導体13を嵌め付けた止着部21fの背面側に止着されている。これらの帯状分割片25a,25b,25c,25d,25e,25f,25g,25h,25i,25jは導体13に電気的に接続され電極を構成する。
【0027】
尚、第1発明、第2発明の実施例にあっては第1の電極14,18を高周波電源に接続し、第2の電極15,19をアースに接続したが、第1の電極14,18を高周波電源に接続し、第2の電極15,19を第1の電極14,18が接続される高周波電源よりも低周波の電源に接続してもよく、或いは第1の電極14,18及び第2の電極15,19の一端(上端)を高周波電源に接続し、第1の電極14,18及び第2の電極15,19の他端(下端)を一端部が接続される高周波電源よりも低周波の電源またはアースに接続してもよい。
また、第3発明にあっては、電極20の一端(上端)を高周波電源に接続し、他端(下端)をこれよりも低周波の電源かアースに接続してもよい。
【0028】
【発明の効果】
以上に説明したように本発明によれば、第1発明、第2発明のプラズマ処理装置のチャンバーの外周に、プラズマを発生させる第1の電極と第2の電極を一定の間隔をあけて螺旋状に巻回したものにおいて、前記第1の電極及び第2の電極をチャンバーの外周を略半周または略1周巻回する複数の帯状分割片にて構成し、各帯状分割片の両端をチャンバーの外側に配置された一対または1本の絶縁体に止着し、この絶縁体に設けた導体によって第1の電極を構成する帯状分割片同士及び前記第2の電極を構成する帯状分割片同士を電気的に接続するようにしたので、均一にプラズマを発生されるための第1の電極と第2の電極間の隙間を、長期に亘って一定に維持することができる。
【0029】
同じく第3発明のプラズマ処理装置のチャンバーの外周に、プラズマを発生させる帯状分割片同士を電気的に接続したので、電極間の隙間を長期に亘って一定に維持することができる。
【0030】
第1及び第3発明のように、帯状電極を2ヵ所で止着するようにすれば、電極の固定がより確実になされ、第2の発明のように、帯状電極を1ヵ所で止着するようにすれば、構造が簡単になり且つ止着作業も楽になる。
【図面の簡単な説明】
【図1】第1発明に係るプラズマ処理装置を分解して示した全体斜視図
【図2】電極をチャンバーに取り付けた状態を示す図
【図3】第2発明に係るプラズマ処理装置を分解して示した全体斜視図
【図4】電極をチャンバーに取り付けた第2図と同様の図
【図5】第3発明に係るプラズマ処理装置を分解して示した全体斜視図
【図6】電源をチャンバーに取り付けた第2図と同様の図
【符号の説明】
1…プラズマ処理装置、2…チャンバー、3…反応ガス導入管、8,9,16,20,21…柱状絶縁体、8a,8b,8c,8d,8e,8f,9a,9b,9c,9d,9e,9f,16a,16b,16c,16d,16e,16f,20a,20b,20c,20d,20e,21a,21b,21c,21d,21e,21f…止着部、10,11,17,22,23…リブ、13…導体、14…第1の電極、14a,14b,14c,14d,14e…第1の電極を構成する帯状分割片、15…第2の電極、15a,15b,15c,15d,15e…第2の電極を構成する帯状分割片、18…第1の電極、18a,18b,18c…第1の電極を構成する帯状分割片、19…第2の電極、19a,19b,19c…第2の電極を構成する帯状分割片、25…電極、25a,25b,25c,25d,25e,25f,25g,25h,25i,25j…電極を構成する帯状分割片。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus used for etching a film formed on a surface of a semiconductor wafer or the like, ashing and removing a photoresist film, and for deposition and the like.
[0002]
[Prior art]
As a plasma processing apparatus for etching a film on the surface of a semiconductor wafer, a first electrode connected to a high-frequency power supply and a second electrode for generating plasma between the electrodes are provided around a chamber made of quartz or the like. What is provided facing each other is known.
[0003]
Here, in the plasma processing apparatus, a place where plasma is mainly generated is a place where the first electrode and the second electrode are closest to each other. Since the shape is a half-cylindrical shape, the locations where plasma is generated are two linear regions extending vertically along the chamber.
[0004]
If the plasma generation region is two linear regions, the plasma generated in the chamber will not be uniform, so the structure disclosed in JP-A-6-132250 or JP-A-8-130185 will be described. There is something.
In the plasma processing apparatus disclosed in JP-A-6-132250, the first electrode and the second electrode are formed in a comb-like shape, and one convex portion enters the other concave portion. In the plasma processing apparatus disclosed in Japanese Patent Application Laid-Open No. 8-130185, a band-shaped first electrode and a band-shaped first electrode are spirally wound around the outer periphery of the chamber at a predetermined interval.
[0005]
[Problems to be solved by the invention]
By using the electrode structure disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 6-132250 or Japanese Patent Application Laid-Open No. 8-130185, almost the entire outer peripheral portion in the chamber can be used as a plasma generation region.
However, in any of the prior arts, there is no means for stably fixing an extremely thin electrode to a predetermined position on the outer peripheral surface of a cylindrical chamber for a long period of time. In particular, the structure disclosed in Japanese Patent Application Laid-Open No. 8-130185 has a structure in which the electrodes are strip-shaped and spirally wound, so that it is difficult to keep the interval between the electrodes constant, and the generation of plasma is uneven. Easy to be.
[0006]
[Means for Solving the Problems]
In order to solve the above problem, a plasma processing apparatus according to a first invention of the present application is a plasma processing apparatus in which a first electrode and a second electrode are formed in a spiral shape at regular intervals around an outer periphery of a substantially cylindrical chamber having a closed upper end. The first electrode and the second electrode are composed of a plurality of band-shaped divided pieces that are wound around the outer periphery of the chamber substantially half a circle, and both ends of each band-shaped divided piece are disposed in a pair on the outside of the chamber. The strip-shaped pieces constituting the first electrode and the strip-shaped pieces constituting the second electrode were fixed to an insulator and electrically connected to each other by a conductor provided on the insulator.
[0007]
Further, in order to solve the above-mentioned problem, the plasma processing apparatus according to the second invention of the present application has a configuration in which the first electrode and the second electrode are arranged at a fixed interval on the outer periphery of a substantially cylindrical chamber whose upper end is closed. The first electrode and the second electrode are spirally wound, and the first electrode and the second electrode are configured by a plurality of strip-shaped pieces that are wound substantially once around the outer periphery of the chamber, and both ends of each strip-shaped piece are disposed outside the chamber. The strip-like pieces constituting the first electrode and the strip-like pieces constituting the second electrode were electrically connected to each other by the conductor provided on the insulator. Configuration.
Further, in order to solve the above problem, in the plasma processing apparatus according to the third invention of the present application, electrodes are spirally wound around the outer periphery of a substantially cylindrical chamber having a closed upper end at a predetermined interval. The electrode is composed of a plurality of strip-shaped pieces that are wound around the outer periphery of the chamber substantially half way, and both ends of each strip-shaped piece are fixed to a pair of insulators arranged outside the chamber, and the conductor provided on the insulator is provided. The band-shaped divided pieces constituting the electrodes were electrically connected to each other.
[0008]
As a mode of connecting the first electrode and the second electrode to a power supply, the first electrode is connected to a high-frequency power supply, and the second electrode is connected to a lower frequency than the high-frequency power supply to which the first electrode is connected. Or one end (upper end) of both the first electrode and the second electrode is connected to a high-frequency power supply, and the other end (lower end) is connected to a lower-frequency power supply or ground. A possible embodiment is considered.
According to the third aspect of the present invention, one end (upper end) of the electrode is connected to a high-frequency power supply, and the other end (lower end) is connected to a lower-frequency power supply or ground.
[0009]
The chamber of the plasma processing apparatus is mounted so as to cover an opening formed in the base, and a table on which an object to be processed such as a semiconductor wafer is placed can face up and down in the opening formed in the base. This is a configuration of a general plasma processing apparatus.
[0010]
The chamber of the plasma processing apparatus according to the present invention has a bell jar type or the like whose upper end is closed, and a reaction gas introduction pipe is attached to the upper end or a position slightly lower than the upper end.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Here, FIG. 1 is an exploded overall perspective view of a plasma processing apparatus according to the first invention, and FIG. 2 is a view showing a state in which electrodes are attached to a chamber.
[0012]
The plasma processing apparatus 1 includes a chamber 2 made of quartz or the like, has a substantially cylindrical shape (bell jar type) having a closed upper end, and has a reaction gas introduction pipe 3 at an upper end.
[0013]
The chamber 2 is composed of a small-diameter chamber upper part 2a and a large-diameter chamber lower part 2b. The inside of the small-diameter chamber upper part 2a is used as a plasma generation space, the large-diameter chamber lower part 2b is used as a processing space, and the large-diameter chamber lower part is used. 2b is air-tightly fixed on the base 4 so as to cover the opening 5 formed in the base 4, and a table 6 on which a wafer W to be processed is placed faces the opening 5 in a vertically movable manner. An exhaust passage 7 leading to the pressure reducing device is formed between the table 6 and the table 6.
[0014]
Further, a pair of columnar insulators 8 and 9 made of alumina, resin, or the like are vertically arranged at opposing positions outside the small-diameter chamber upper portion 2a. The columnar insulator 8 is defined by a rib 10 into six fastening portions 8a, 8b, 8c, 8d, 8e, 8f, and the columnar insulator 9 is defined by a rib 11 with six fastening portions 9a, 9b, 9c, 9d, 9e, 9f, one mounting hole 12 is formed on one side of the upper and lower fastening portions 8a, 9a, 8f, 9f, and the remaining intermediate fastening portions 8b, 8c, 8d, 8e, 9b, 9c, 9d, and 9e are formed with two mounting holes 12 on one side, and a conductor 13 made of an aluminum plate, a copper plate, or the like is fitted in the intermediate fastening portion.
[0015]
End portions of a plurality of strip-shaped divided pieces are fixed to the fixing portions. Specifically, one end of the strip-shaped divided piece 14a is fixed to the back side of the fastening part 8a in the drawing of the fastening part 8a, and the other end is screwed to the back side of the fastening part 9b to which the conductor 13 is fitted, One end of the strip 14b is fastened to the front side of the fastening portion 9b to which the conductor 13 is fitted, and the other end is fastened to the front side of the fastening portion 8c to which the conductor 13 is fitted. The other end is fastened to the back side of the fastening portion 8c to which the conductor 13 is fitted, the other end is fastened to the back side of the fastening portion 9d to which the conductor 13 is fitted, and one end of the strip-shaped split piece 14d is fitted to the conductor 13. The other end is fixed to the front side of the attaching portion 9d, the other end is fixed to the front side of the fixing portion 8e to which the conductor 13 is fitted, and one end of the strip-shaped split piece 14e is attached to the back side of the fixing portion 8e to which the conductor 13 is fitted. The other end, which has become thinner, is fixed to the rear side of the fixing portion 9f. The strip-shaped divided pieces 14a, 14b, 14c, 14d, 14e are electrically connected by the conductor 13 to form the first electrode 14.
[0016]
One end of the strip 15a is narrowed to the front side of the fastening portion 9a in the drawing, and the other end is fastened to the front side of the fastening portion 8b to which the conductor 13 is fitted. Is fixed to the back side of the fastening portion 8b to which the conductor 13 is fitted, the other end is secured to the back side of the fastening portion 9c to which the conductor 13 is fitted, and one end of the strip-shaped split piece 15c is fitted to the conductor 13. The other end is fastened to the front side of the fastening portion 9c and the front side of the fastening portion 8d to which the conductor 13 is fitted, and one end of the strip-shaped split piece 15d is the back side of the fastening portion 8d to which the conductor 13 is fitted. The other end is fixed to the back side of the fastening portion 9e to which the conductor 13 is fitted, and one end of the strip-shaped split piece 15e is attached to the front side of the fastening portion 9e to which the conductor 13 is fitted, and the other end is thinned. Are fastened to the front side of the fastening portion 8f. These strip-shaped divided pieces 15 a, 15 b, 15 c, 15 d, and 15 e are electrically connected by the conductor 13 to form the second electrode 15.
[0017]
As described above, the strip-shaped split pieces 14a to 14e forming the first electrode 14 are electrically connected, and the strip-shaped split pieces 15a to 15e forming the second electrode 15 are electrically connected to each other. The electrode 14 and the second electrode 15 are spirally wound around the outer periphery of the chamber 2 while keeping a constant interval. When the first electrode 14 is connected to a high-frequency power supply and the second electrode 15 is connected to a lower-frequency power supply or ground than the first electrode, plasma is generated mainly in the gap between the electrodes.
[0018]
In the embodiment, among the plurality of strip-shaped pieces, the shape of the strip-shaped pieces located at the upper end and the lower end is made thin at one end, but the shape of all the strip-shaped pieces may be the same. It is possible.
[0019]
FIG. 3 is an exploded perspective view of the plasma processing apparatus according to the second invention, and FIG. 4 is a view similar to FIG. 2 in which electrodes are attached to a chamber. In this plasma processing apparatus, two columnar insulators are used to fix the ends of the strip electrodes. However, in this plasma processing apparatus, one columnar insulator 16 is used, Has stopped.
[0020]
That is, the columnar insulator 16 is defined by the ribs 17 into six fastening portions 16a, 16b, 16c, 16d, 16e, and 16f, and the back side of the fastening portion 16a is defined by the ribs 17a at 16a-1 and 16a-. The front side of the fastening portion 16f is divided into 16f-1 and 16f-2 by a rib 17b.
[0021]
One end of the strip 18a is fixed to the fastening portion 16a-1 and the other end is fastened to the front side of the fastening portion 16b in which the conductor 13 is fitted. The other end is fastened to the back side of the fastening portion 16b to which the conductor 13 is fitted, and the front side of the fastening portion 16d to which the conductor 13 is fitted, and one end of the strip-shaped split piece 18c is fitted to the conductor 13 On the back side of 16d, the other thinned end is fixed to the front side of the fixing portion 16f-1, and these strip-shaped divided pieces 18a, 18b, 18c are electrically connected by the conductor 13 and are connected to the first electrode 18d. Is composed.
[0022]
One end of the strip 19a is fixed to the fastening portion 16a-2, and the other end is fastened to the front side of the fastening portion 16c in which the conductor 13 is fitted. The other end is fastened to the back side of the fastening portion 16c to which the conductor 13 is fitted, the front surface side of the fastening portion 16e to which the conductor 13 is fitted, and one end of the strip-shaped split piece 19c is fitted to the conductor 13. On the back side of 16e, the thinned other end is fixed to the front side of the fixing portion 16f-2, and these strip-shaped divided pieces 19a, 19b, 19c are electrically connected by the conductor 13 and the second electrode 19 is formed. Is composed.
[0023]
As described above, the strip-shaped split pieces 18a to 18c forming the first electrode 18 are electrically connected, and the strip-shaped split pieces 19a to 19c forming the second electrode 19 are electrically connected to each other. The electrode 18 and the second electrode 19 are spirally wound around the outer periphery of the chamber 2 while maintaining a constant interval.
[0024]
FIG. 5 is an overall perspective view showing the plasma processing apparatus according to the third invention in an exploded state, and FIG. 6 is a view similar to FIGS. 2 and 4 in which electrodes are attached to a chamber.
The plasma processing apparatus according to the third aspect of the present invention uses two columnar insulators to fix the ends of the strip electrodes similarly to the plasma processing apparatus according to the first aspect.
[0025]
That is, the columnar insulator 20 is defined by the rib 22 into five fastening portions 20a, 20b, 20c, 20d, and 20e, and the columnar insulator 21 is defined by the rib 23 with six fastening portions 21a, 21b, 21c. 21d, 21e, 21f, one attachment hole 24 is formed on one end of each of the fastening portions 21a, 21f at the upper and lower ends of the columnar insulator 21, and the remaining fastening portions 20a, 20b, 20c, 20d. , 20e, 21b, 21c, 21d, and 21e, two mounting holes 24 are formed on one side, and a conductor 13 made of an aluminum plate, a copper plate, or the like is fitted in an intermediate fastening portion.
[0026]
Specifically, one end of the strip 25a is attached to the front side of the fastening portion 20a in the drawing, and the other end is fastened to the front side of the fastening portion 21a to which the conductor 13 is fitted. Is fixed to the back side of the fastening portion 20a to which the conductor 13 is fitted, the other end is secured to the back side of the fastening portion 21b to which the conductor 13 is fitted, and one end of the strip 25c is fixed to the fastening portion 21b. The other end is fixed to the front side of the fastening portion 20b to which the conductor 13 is fitted, and one end of the strip 25d is attached to the back side of the fastening portion 20b to which the conductor 13 is fitted. Is fixed to the back side of the fastening portion 21c on which the conductor 13 is fitted, one end of the strip 25e is on the front side of the fastening portion 21c, and the other end is the front surface of the fastening portion 20c on which the conductor 13 is fitted. And one end of the strip 25f is attached to the back side of the fastening portion 20c in which the conductor 13 is fitted. The other end is fixed to the back side of the fastening portion 21d to which the conductor 13 is fitted, and one end of the strip 25g is attached to the front side of the fastening portion 21d, and the other end is the fastening portion to which the conductor 13 is fitted. One end of the strip 25h is fastened to the back side of the fastening portion 20d to which the conductor 13 is fitted, and the other end is fastened to the back side of the fastening portion 21e to which the conductor 13 is fitted. One end of the strip 25i is fixed to the front side of the fastening portion 21e, the other end is fastened to the front side of the fastening portion 20e to which the conductor 13 is fitted, and one end of the strip 25j is fitted to the conductor 13. The thinned other end is fixed to the back side of the attached fastening portion 20e to the back side of the fastening portion 21f to which the conductor 13 is fitted. These strips 25a, 25b, 25c, 25d, 25e, 25f, 25g, 25h, 25i, 25j are electrically connected to the conductor 13 to form electrodes.
[0027]
In the first and second embodiments, the first electrodes 14 and 18 are connected to a high-frequency power source, and the second electrodes 15 and 19 are connected to ground. 18 may be connected to a high-frequency power supply, and the second electrodes 15 and 19 may be connected to a power supply with a lower frequency than the high-frequency power supply to which the first electrodes 14 and 18 are connected, or the first electrodes 14 and 18 may be connected. A high-frequency power source to which one ends (upper ends) of the second electrodes 15 and 19 are connected to a high-frequency power source, and the other ends (lower ends) of the first electrodes 14 and 18 and the second electrodes 15 and 19 are connected to one end. It may be connected to a lower frequency power supply or ground.
Further, in the third invention, one end (upper end) of the electrode 20 may be connected to a high-frequency power supply, and the other end (lower end) may be connected to a lower-frequency power supply or ground.
[0028]
【The invention's effect】
As described above, according to the present invention, the first electrode and the second electrode for generating plasma are spirally formed on the outer periphery of the chamber of the plasma processing apparatus of the first invention and the second invention at a predetermined interval. The first electrode and the second electrode are composed of a plurality of strips each of which is wound around the outer periphery of the chamber substantially half or one round, and both ends of each strip are placed in the chamber. And a plurality of strip-like pieces constituting the first electrode and between the strip-like pieces constituting the second electrode, which are fixed to a pair or a single insulator disposed outside the insulator. Are electrically connected, the gap between the first electrode and the second electrode for uniformly generating plasma can be maintained constant for a long period of time.
[0029]
Similarly, the strip-shaped pieces for generating plasma are electrically connected to the outer periphery of the chamber of the plasma processing apparatus of the third invention, so that the gap between the electrodes can be kept constant for a long time.
[0030]
If the band-shaped electrode is fixed at two places as in the first and third inventions, the electrode can be more securely fixed, and the band-shaped electrode is fixed at one place as in the second invention. By doing so, the structure becomes simple and the fastening work becomes easy.
[Brief description of the drawings]
1 is an overall perspective view showing an exploded plasma processing apparatus according to a first invention; FIG. 2 is a view showing a state in which electrodes are attached to a chamber; FIG. 3 is an exploded view of a plasma processing apparatus according to a second invention; FIG. 4 is a view similar to FIG. 2 in which electrodes are attached to a chamber. FIG. 5 is an exploded perspective view of a plasma processing apparatus according to a third invention. FIG. Figure similar to Fig. 2 attached to the chamber
DESCRIPTION OF SYMBOLS 1 ... Plasma processing apparatus, 2 ... Chamber, 3 ... Reaction gas introduction pipe, 8, 9, 16, 20, 21 ... Columnar insulator, 8a, 8b, 8c, 8d, 8e, 8f, 9a, 9b, 9c, 9d , 9e, 9f, 16a, 16b, 16c, 16d, 16e, 16f, 20a, 20b, 20c, 20d, 20e, 21a, 21b, 21c, 21d, 21e, 21f ... fastening parts, 10, 11, 17, 22 ... , 23 ... rib, 13 ... conductor, 14 ... first electrode, 14a, 14b, 14c, 14d, 14e ... strip-shaped divided piece constituting the first electrode, 15 ... second electrode, 15a, 15b, 15c, 15d, 15e: band-shaped divided pieces constituting the second electrode; 18: first electrode; 18a, 18b, 18c: band-shaped divided pieces constituting the first electrode; 19: second electrode, 19a, 19b, 19c: second electrode Band split pieces constituting, 25 ... electrode, 25a, 25b, 25c, 25d, 25e, 25f, 25g, 25h, 25i, band split pieces constituting the 25j ... electrode.

Claims (10)

上端を閉じた略筒状をなすチャンバーの外周に、第1の電極及び第2の電極が一定の間隔をあけて螺旋状に巻回され、これら第1の電極及び第2の電極はチャンバーの外周を略半周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された一対の絶縁体に止着され、この絶縁体に設けた導体によって第1の電極を構成する帯状分割片同士及び前記第2の電極を構成する帯状分割片同士は電気的に接続され、且つ各帯状分割片は互いに間隔をもって上下方向に交互に配置されることを特徴とするプラズマ処理装置。The outer periphery of the chamber having a substantially cylindrical shape closed upper end, a first electrode and a second electrode at a constant interval is wound death spirally, these first and second electrodes chamber consists of an outer periphery of a plurality of strip-shaped divided pieces of death approximately half the winding, both ends of each strip divided pieces are fixed to the pair of insulator disposed outside the chamber, first by a conductor which is provided on the insulator The strip-shaped pieces constituting one electrode and the strip-shaped pieces constituting the second electrode are electrically connected to each other, and the strip-shaped pieces are alternately arranged in the vertical direction at intervals. Plasma processing apparatus. 上端を閉じた略筒状をなすチャンバーの外周に、第1の電極及び第2の電極が一定の間隔をあけて螺旋状に巻回され、これら第1の電極及び第2の電極はチャンバーの外周を略1周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された1本の絶縁体に止着され、この絶縁体に設けた導体によって第1の電極を構成する帯状分割片同士及び前記第2の電極を構成する帯状分割片同士は電気的に接続され、且つ各帯状分割片は互いに間隔をもって上下方向に交互に配置されることを特徴とするプラズマ処理装置。The outer periphery of the chamber having a substantially cylindrical shape closed upper end, a first electrode and a second electrode at a constant interval is wound death spirally, these first and second electrodes chamber consists outer periphery of a plurality of strip-shaped divided pieces approximately 1 Shumakikai death, both ends of each strip split pieces are fastened to one of the insulator disposed outside the chamber, the conductor provided on the insulator The strip-like pieces constituting the first electrode and the strip-like pieces constituting the second electrode are electrically connected to each other, and the respective strip-like pieces are alternately arranged in the vertical direction at intervals. A plasma processing apparatus characterized by the above-mentioned. 請求項1または請求項2に記載のプラズマ処理装置において、前記第1の電極は高周波電源に接続され、前記第2の電極は前記第1の電極が接続される高周波電源よりも低周波の電源に接続されることを特徴とするプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein the first electrode is connected to a high-frequency power supply, and the second electrode is a power supply having a lower frequency than a high-frequency power supply to which the first electrode is connected. 4. A plasma processing apparatus, which is connected to a plasma processing apparatus. 請求項1または請求項2に記載のプラズマ処理装置において、前記第1の電極は高周波電源に接続され、前記第2の電極はアースに接続されることを特徴とするプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein the first electrode is connected to a high-frequency power supply, and the second electrode is connected to ground. 4. 請求項1または請求項2に記載のプラズマ処理装置において、前記第1の電極及び第2の電極の上方または下方の一端は高周波電源に接続され、他端は前記一端が接続される高周波電源よりも低周波の電源またはアースに接続されることを特徴とするプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein one of the upper and lower ends of the first electrode and the second electrode is connected to a high-frequency power supply, and the other end is connected to a high-frequency power supply to which the one end is connected. The plasma processing apparatus is also connected to a low-frequency power supply or a ground. 請求項5に記載のプラズマ装置処理において、前記第1の電極及び第2の電極の上方の一端が高周波電源に接続されていることを特徴とするプラズマ処理装置。6. The plasma processing apparatus according to claim 5, wherein upper ends of the first electrode and the second electrode are connected to a high-frequency power supply. 上端を閉じた略筒状をなすチャンバーの外周に、電極が一定の間隔をあけて螺旋状に巻回され、この電極の一端は高周波電源に接続され、他端は前記一端が接続される高周波電源よりも低周波の電源又はアースに接続され、更にこの電極はチャンバーの外周を略半周巻回する複数の帯状分割片から構成され、各帯状分割片の両端はチャンバーの外側に配置された一対の絶縁体に止着され、この絶縁体に設けた導体によって電極を構成する帯状分割片同士は電気的に接続され、且つ各帯状分割片は互いに間隔をもって上下方向に配置されることを特徴とするプラズマ処理装置。The outer periphery of the chamber having a substantially cylindrical shape closed upper end, the electrode is wound death spirally with a predetermined spacing therebetween, one end of the electrode is connected to a high frequency power supply, the other end said one end is connected than the high-frequency power source is connected to the power supply or ground of the low frequency, further the electrode is composed of a plurality of strip-shaped divided pieces of death almost half winding the outer periphery of the chamber, both ends of each strip split pieces are arranged outside the chamber The band-shaped divided pieces constituting the electrodes are electrically connected to each other by a conductor provided on the insulator , and the band-shaped divided pieces are vertically arranged with an interval therebetween. Characteristic plasma processing apparatus. 請求項7に記載のプラズマ処理装置において、前記電極の上方の一端が高周波電源に接続されていることを特徴とするプラズマ処理装置。8. The plasma processing apparatus according to claim 7, wherein an upper end of the electrode is connected to a high-frequency power supply. 請求項1乃至請求項のいずれかに記載のプラズマ処理装置において、前記チャンバーはその下端開口で基台に形成した開口部を覆うように取り付けられ、前記開口部には被処理物を載置するテーブルが昇降可能に臨むことを特徴とするプラズマ処理装置。The plasma processing apparatus according to any one of claims 1 to 8, wherein the chamber is attached to cover the opening formed in the base at its lower end opening, the said opening placed an object to be processed A plasma processing apparatus characterized in that a table to be moved faces up and down. 請求項1乃至請求項のいずれかに記載のプラズマ処理装置において、前記チャンバーの上部には反応ガスの導入管が設けられていることを特徴とするプラズマ処理装置。The plasma processing apparatus according to any one of claims 1 to 9, the plasma processing apparatus characterized by introducing tube reaction gas at the top of the chamber are provided.
JP30139996A 1996-02-23 1996-11-13 Plasma processing equipment Expired - Fee Related JP3569090B2 (en)

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US08/805,062 US5846329A (en) 1996-02-23 1997-02-24 Plasma processing apparatus
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