JP3427040B2 - High frequency package - Google Patents
High frequency packageInfo
- Publication number
- JP3427040B2 JP3427040B2 JP2000158825A JP2000158825A JP3427040B2 JP 3427040 B2 JP3427040 B2 JP 3427040B2 JP 2000158825 A JP2000158825 A JP 2000158825A JP 2000158825 A JP2000158825 A JP 2000158825A JP 3427040 B2 JP3427040 B2 JP 3427040B2
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- circuit board
- frequency device
- line
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguide Aerials (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波、特にマイ
クロ波またはミリ波用デバイスを収納するとともに、ア
ンテナ回路を具備した高周波用パッケージに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency package that houses a device for high-frequency waves, particularly microwaves or millimeter waves, and has an antenna circuit.
【０００２】[0002]
【従来技術】近年に至り、マイクロ波及びミリ波を利用
した通信システムの開発等が盛んに行われ、それらの機
器に使用される高周波用デバイスの開発が進められつつ
ある。2. Description of the Related Art In recent years, development of communication systems utilizing microwaves and millimeter waves has been actively carried out, and development of high-frequency devices used in those devices has been promoted.
【０００３】マイクロ波及びミリ波は、広帯域、高分解
能、短波長等の特性を有することで知られている。これ
らの特徴は、大容量通信、高速データ伝送、機器の小型
軽量化が可能であると同時に、他の通信システムへの干
渉性が小さい等のメリットを有することから、従来よ
り、ＩＤカードシステム、無線ＬＡＮ、車載レーダ等の
システムへの利用が盛んに開発されている。Microwaves and millimeter waves are known to have characteristics such as wide band, high resolution and short wavelength. These features have advantages such as large-capacity communication, high-speed data transmission, small size and light weight of the device, and low interference with other communication systems. It has been actively developed for use in systems such as wireless LAN and in-vehicle radar.
【０００４】このようなシステムは、通常、アンテナ、
高周波発振器、増幅器等の高周波デバイス、高周波デバ
イスを封止するパッケージ、アンテナと高周波デバイ
ス、あるいは高周波デバイス同士を接続する伝送線路か
ら構成されている。Such systems typically include antennas,
It is composed of a high-frequency device such as a high-frequency oscillator and an amplifier, a package for encapsulating the high-frequency device, an antenna and the high-frequency device, or a transmission line connecting the high-frequency devices to each other.
【０００５】しかし、一般的に高周波デバイス自体の出
力が弱いこと及び伝送線路における損失が大きいことが
問題として取り上げられている。特に、アンテナと高周
波デバイス間の伝送損失を低減するために伝送線路とし
て、従来より伝送損失の少ない導波管や同軸ケーブルが
用いられている。However, in general, the weak output of the high frequency device itself and the large loss in the transmission line are taken up as problems. In particular, as a transmission line, a waveguide or a coaxial cable having a smaller transmission loss than in the past has been used to reduce the transmission loss between the antenna and the high frequency device.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来ア
ンテナと高周波デバイスとは別体で設けられており、こ
れらの素子間を導波管や同軸ケーブルにより接続する
と、システム全体が大きくなってしまうという問題があ
り、また、量産にも適さないという問題点がある。However, the conventional antenna and the high frequency device are separately provided, and if these elements are connected by a waveguide or a coaxial cable, the whole system becomes large. However, there is a problem that it is not suitable for mass production.
【０００７】一方、導波管や同軸ケーブルに換わる伝送
線路として、マイクロストリップ線路、コプレーナウエ
イブガイド等が用いられているが、単位長さ当りの伝送
損失が導波管や同軸ケーブルに比べて大きいという欠点
を有するために、容易には用いることができないのが現
状であった。On the other hand, a microstrip line, a coplanar wave guide or the like is used as a transmission line replacing the waveguide or the coaxial cable, but the transmission loss per unit length is larger than that of the waveguide or the coaxial cable. At the present time, it cannot be used easily because of the drawback.
【０００８】従って、本発明は、このような状況を鑑
み、アンテナ素子と高周波デバイスとを具備し、コンパ
クトでしかも量産が可能なマイクロ波またはミリ波等の
高周波を用いたシステムに好適に使用可能な高周波用パ
ッケージを提供することを目的とするものである。Therefore, in view of the above situation, the present invention is suitable for use in a system using an antenna element and a high frequency device, which is compact and can be mass-produced and which uses a high frequency wave such as microwave or millimeter wave. The object is to provide a high-frequency package.
【０００９】[0009]
【課題を解決するための手段】本発明者らは、このよう
な課題に対して検討を重ねた結果、高周波デバイスとア
ンテナをできるだけ近接して一体化して配置し、これら
をマイクロストリップ線路やコプレーナウエイブガイド
等により接続される伝送線路の長さを短くすることによ
り、伝送損失を極力低減できることを見出し本発明に至
った。DISCLOSURE OF THE INVENTION As a result of repeated studies on such a problem, the inventors of the present invention have integrated a high frequency device and an antenna as close to each other as possible, and arranged them in a microstrip line or a coplanar line. The inventors have found that the transmission loss can be reduced as much as possible by shortening the length of the transmission line connected by a wave guide or the like, and the present invention has been completed.
【００１０】即ち、本発明の高周波用パッケージは、比
誘電率が２〜１０の第１の誘電体基板にアンテナ素子と
該アンテナ素子に給電するための高周波線路とを形成し
たアンテナ回路基板と、比誘電率が５〜１０の第２の誘
電体基板の一部にキャビティを形成し、該キャビティ内
に高周波デバイスを収納し、且つ該高周波デバイスに信
号を伝達するための伝送線路を形成した高周波デバイス
回路基板とを接着剤により接合一体化、または予め焼成
前の成形体を積層一体化した後、同時焼成して一体化し
てなることを特徴とするものである。[0010] In other words, high-frequency package of the present invention, the ratio
An antenna circuit board having a dielectric constant to form a high-frequency line for supplying power to the antenna element and the antenna element on the first dielectric substrate 2 to 10, having a relative dielectric constant of 5 to 10 second dielectric substrate A high-frequency device circuit board having a cavity formed in a part thereof, a high-frequency device housed in the cavity, and a transmission line for transmitting a signal to the high-frequency device formed by bonding with an adhesive, or in advance. Firing
After the former molded body is laminated and integrated, it is fired together and integrated.
It is characterized by
【００１１】ここで、前記アンテナ回路基板が、前記高
周波デバイス回路基板における前記キャビティを形成す
るための蓋体であること、前記第１の誘電体基板の厚み
が０．０３λ0〜０．０６λ0（λ0は真空中の波長）で
あることが望ましい。Here, the antenna circuit board is a lid for forming the cavity in the high frequency device circuit board, and the thickness of the first dielectric board is 0.03λ 0 to 0.06λ 0. It is desirable that (λ 0 is a wavelength in vacuum).
【００１２】[0012]
【発明の実施の形態】本発明の高周波用パッケージの構
造を図面をもとに説明する。図１は、本発明の高周波用
パッケージの一例を示す断面図である。図１において、
高周波用パッケージ１は、アンテナ回路基板Ａと、高周
波デバイス回路基板Ｂにより構成される。アンテナ回路
基板Ａにおいては、第１の誘電体基板２の表面に平面型
のアンテナ素子３が形成されており、誘電体基板２のア
ンテナ素子３形成面の反対側の面には、アンテナ素子３
に給電するための高周波線路４（以下、給電線路とい
う。）が形成されている。また、誘電体基板２の内部に
は、ほぼ基板内全面にグランド層５が形成され、このグ
ランド層５のアンテナ素子３と対向する位置にスロット
６が形成されている。このようなアンテナ回路基板Ａに
よれば、アンテナ素子３で受信した電磁波はスロット６
を介して給電線路４と電磁的に結合されて電磁波が伝達
される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the high frequency package of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of the high frequency package of the present invention. In FIG.
The high frequency package 1 includes an antenna circuit board A and a high frequency device circuit board B. In the antenna circuit board A, the planar antenna element 3 is formed on the surface of the first dielectric substrate 2, and the antenna element 3 is formed on the surface of the dielectric substrate 2 opposite to the surface on which the antenna element 3 is formed.
A high-frequency line 4 (hereinafter, referred to as a power feeding line) for feeding the power is formed. Inside the dielectric substrate 2, a ground layer 5 is formed on almost the entire surface of the substrate, and a slot 6 is formed at a position of the ground layer 5 facing the antenna element 3. According to such an antenna circuit board A, the electromagnetic wave received by the antenna element 3 is received by the slot 6
Electromagnetic waves are transmitted by being electromagnetically coupled to the power feeding line 4 via the.
【００１３】一方、高周波デバイス回路基板Ｂは、第２
の誘電体基板７の一部にキャビティ８が形成され、キャ
ビティ８内には高周波デバイス９が収納され、蓋体１０
により気密に封止されている。また、高周波デバイス９
は、第２の誘電体基板７に形成された伝送線路１１と電
気的に接続されており、高周波デバイス９には伝送線路
１１を通じて信号が伝達される。また、誘電体基板７内
にも、全面にグランド層１２が形成されている。On the other hand, the high frequency device circuit board B has a second
A cavity 8 is formed in a part of the dielectric substrate 7 of FIG.
Is hermetically sealed by. In addition, the high frequency device 9
Are electrically connected to the transmission line 11 formed on the second dielectric substrate 7, and a signal is transmitted to the high frequency device 9 through the transmission line 11. Further, the ground layer 12 is formed on the entire surface of the dielectric substrate 7.
【００１４】また、図１によれば、上記のアンテナ回路
基板Ａの給電線路４形成面と、高周波デバイス回路基板
Ｂの高周波デバイス９形成面の背面同志で積層されて一
体化されている。そして、アンテナ回路基板Ａの給電線
路４と、高周波デバイス回路基板Ｂの伝送線路１１の間
には、全面にグランド層１２が形成され、給電線路４と
伝送線路１１とが対向する位置において、グランド層１
２にスロット１３が形成され、このスロット１３を介し
て、給電線路４と伝送線路１１とは電磁結合されてい
る。Further, according to FIG. 1, the feed line 4 forming surface of the antenna circuit board A and the back surface of the high frequency device 9 forming surface of the high frequency device circuit board B are laminated and integrated together. A ground layer 12 is formed on the entire surface between the power feeding line 4 of the antenna circuit board A and the transmission line 11 of the high frequency device circuit board B, and the ground layer 12 is formed at a position where the power feeding line 4 and the transmission line 11 face each other. Layer 1
2, a slot 13 is formed, and the feed line 4 and the transmission line 11 are electromagnetically coupled to each other through the slot 13.
【００１５】また、アンテナ回路基板Ａ内のグランド層
５と、高周波デバイス回路基板Ｂのグランド層１２と
は、できるだけ多くのバイアホール１４、１５等により
電気的に接続することがグランド層の共振現象を抑える
点で望ましい。Further, the ground layer 5 in the antenna circuit board A and the ground layer 12 in the high frequency device circuit board B should be electrically connected to each other by as many via holes 14 and 15 as possible. It is desirable in terms of suppressing
【００１６】このように、図１によれば、アンテナ回路
基板Ａにおけるアンテナ素子３と給電線路４、および高
周波デバイス回路基板Ｂにおける伝送線路１１と、給電
線路４とは、いずれも上述したようにグランド層５、１
２に形成されたスロット６、１３を介して電磁結合され
ているが、このうち、伝送線路１１と、給電線路４との
電磁結合構造を図２に示した。伝送線路１１と給電線路
４とは同一のインピーダンスになるように形成され、そ
れらの端部同士が平面的にみて伝送信号の波長の１／４
の長さ相当で重複するように配置されている。そして、
その重複部分のグランド層において、幅が線路の幅とほ
ぼ同一幅のスロット１３が形成される。また、このスロ
ットの長さは信号波長の１／２の長さに形成されてい
る。As described above, according to FIG. 1, the antenna element 3 and the feeding line 4 on the antenna circuit board A, and the transmission line 11 and the feeding line 4 on the high frequency device circuit board B are all as described above. Ground layer 5, 1
Although electromagnetically coupled through the slots 6 and 13 formed in 2, the electromagnetic coupling structure of the transmission line 11 and the power feeding line 4 is shown in FIG. The transmission line 11 and the feeding line 4 are formed so as to have the same impedance, and their ends are ¼ of the wavelength of the transmission signal when viewed in plan.
Are arranged so as to overlap each other in length. And
In the ground layer at the overlapping portion, the slot 13 having a width substantially the same as the width of the line is formed. The length of this slot is half the signal wavelength.
【００１７】また、アンテナ素子３と給電線路４とも図
２と同様に配置して形成することにより、電磁結合され
ている。Further, both the antenna element 3 and the feed line 4 are electromagnetically coupled by being arranged and formed in the same manner as in FIG.
【００１８】図１の構成によれば、アンテナ素子３で受
信した電磁波による信号は、スロット６を介して給電線
路４に伝達され、さらに給電線路４と電磁的に結合され
た伝送線路１１に伝達され、最終的に高周波デバイス９
に伝達される。なお、高周波デバイス９において所定の
信号処理を行なった後、伝送線路１６を通して外部接続
端子１７から出力される。According to the configuration of FIG. 1, the signal of the electromagnetic wave received by the antenna element 3 is transmitted to the power feeding line 4 through the slot 6 and further to the transmission line 11 electromagnetically coupled to the power feeding line 4. And finally the high frequency device 9
Be transmitted to. After the high-frequency device 9 performs a predetermined signal processing, it is output from the external connection terminal 17 through the transmission line 16.
【００１９】図３は、本発明の高周波用パッケージの他
の実施例の断面図である。図３において図１の実施例と
同一機能部については同一の符号を付した。かかる実施
例によれば、アンテナ回路基板Ａを高周波デバイス回路
基板Ｂにおけるキャビティ８を形成するための蓋体（１
０）として形成することにより、パッケージ全体の部品
数を減少させることができる。また、かかる構成によれ
ば、高周波デバイス９にヒートシンク１８を接合して高
周波デバイス９から発生した熱を効率的に放熱させるこ
とができるために、デバイスの加熱による誤動作を防止
しパッケージとしての機能の信頼性をさらに高めること
ができる。FIG. 3 is a sectional view of another embodiment of the high frequency package of the present invention. In FIG. 3, the same functional parts as those in the embodiment of FIG. 1 are designated by the same reference numerals. According to this embodiment, the antenna circuit board A is provided with the lid body (1) for forming the cavity 8 in the high frequency device circuit board B.
By forming it as 0), the number of parts of the entire package can be reduced. Further, according to such a configuration, since the heat sink 18 can be joined to the high frequency device 9 to efficiently dissipate the heat generated from the high frequency device 9, malfunction due to heating of the device can be prevented and the function of the package can be improved. The reliability can be further enhanced.
【００２０】通常、アンテナ回路において、アンテナ素
子３が図１、３のようなパッチアンテナの場合、アンテ
ナ回路のＱ値は第１の誘電体基板の比誘電率に比例して
大きくなり、誘電体基板の厚さｄに反比例して小さくな
る性質がある。このＱ値が小さくなると、指向性が乱れ
るためＱ値は大きい方がよい。ただし、Ｑ値が大きすぎ
ると周波数帯域が狭くなってしまう。ここで、Ｑ値を大
きくするために、誘電体基板の誘電率をあまり大きくす
ると、空気の誘電率との差が大きくなるため、電磁波
は、誘電体基板表面を伝播しやすくなり、アンテナ面に
垂直な方向の空間に放射されにくくなる。これに対し
て、放射効率は、誘電率が低く、誘電体基板の厚さｄが
大きい程、大きくなる傾向にある。Usually, in the antenna circuit, when the antenna element 3 is a patch antenna as shown in FIGS. 1 and 3, the Q value of the antenna circuit increases in proportion to the relative permittivity of the first dielectric substrate, and It has the property of becoming smaller in inverse proportion to the thickness d of the substrate. If this Q value becomes small, the directivity is disturbed, so the Q value is preferably large. However, if the Q value is too large, the frequency band becomes narrow. Here, if the permittivity of the dielectric substrate is made too large in order to increase the Q value, the difference from the permittivity of air becomes large, so that electromagnetic waves easily propagate on the surface of the dielectric substrate, and the electromagnetic wave is transmitted to the antenna surface. It becomes difficult to be radiated to the space in the vertical direction. On the other hand, the radiation efficiency tends to increase as the dielectric constant decreases and the thickness d of the dielectric substrate increases.
【００２１】従って、このような観点から、本発明にお
いては、アンテナ回路基板Ａにおける第１の誘電体基板
２の比誘電率が２〜１０であることが重要であり、また
誘電体基板の厚み（図１におけるパッチアンテナ３から
スロット６までの距離）も０．０３λ0〜０．０６λ
0（λ0は真空中の波長）が適当である。つまり、比誘電
率が２より低いか、厚みが０．０６λ0より厚いとＱ値
が小さくなり、比誘電率が１０より大きいか、または厚
みが０．０３λ0より薄いと、放射効率が小さくなる。From this point of view, therefore, in the present invention, it is important that the relative permittivity of the first dielectric substrate 2 in the antenna circuit substrate A is 2 to 10 and the thickness of the dielectric substrate. (The distance from the patch antenna 3 to the slot 6 in FIG. 1) is also 0.03λ 0 to 0.06λ
0 (λ 0 is the wavelength in vacuum) is suitable. That is, when the relative permittivity is lower than 2 or the thickness is thicker than 0.06λ 0 , the Q value becomes small, and when the relative permittivity is larger than 10 or the thickness is thinner than 0.03λ 0 , the radiation efficiency becomes small. Become.
【００２２】一方、高周波デバイス９と接続される伝送
線路１１や伝送線路１６の線幅は、５０〜３００μｍが
適当である。これは、線幅を５０μｍより小さくする
と、印刷技術や製造時の歩留り等から信頼性の高い線路
を形成するのが難しく、３００μｍを越えると、回路自
体が大きくなってしまうためである。このため、高周波
デバイス回路における第２の誘電体基板７の比誘電率
は、５〜５０であることが重要である。例えば、マイク
ロストリップ線路の場合、比誘電率が５未満のとき、特
性インピーダンスを５０Ωにするには、線路幅を３００
μｍより大きくするか、又は誘電体厚みを１８０μｍよ
り小さくしなければならない。前者の場合は回路自体が
大きくなり、また、後者の場合はテープ多層技術を用い
て量産するには薄すぎて適当でない。On the other hand, the line width of the transmission line 11 and the transmission line 16 connected to the high frequency device 9 is preferably 50 to 300 μm. This is because if the line width is smaller than 50 μm, it is difficult to form a highly reliable line in view of printing technology, manufacturing yield, etc., and if it exceeds 300 μm, the circuit itself becomes large. Therefore, it is important that the dielectric constant of the second dielectric substrate 7 in the high frequency device circuit is 5 to 50. For example, in the case of a microstrip line, when the relative permittivity is less than 5, in order to set the characteristic impedance to 50Ω, the line width is 300
It must be greater than μm or the dielectric thickness must be less than 180 μm. In the former case, the circuit itself becomes large, and in the latter case, it is too thin and not suitable for mass production using the tape multilayer technique.
【００２３】他方、比誘電率が５０を越えると、特性イ
ンピーダンスを５０Ωにするには、線路幅を５０μｍよ
り小さくするか、又は誘電体厚みを７００μｍより大き
くしなければならない。前者の場合は、信頼性の高い線
路を形成することが難しく、また後者の場合には、パッ
ケージそのものが全体的に厚くなり、適当でないためで
ある。On the other hand, when the relative permittivity exceeds 50, the line width must be smaller than 50 μm or the dielectric thickness must be larger than 700 μm in order to obtain the characteristic impedance of 50Ω. This is because it is difficult to form a highly reliable line in the former case, and the package itself becomes thicker in the latter case, which is not suitable.
【００２４】図１および図３の実施例によれば、アンテ
ナ回路基板Ａにおける誘電体基板２は、上記観点から、
例えば、アルミナセラミックス、ガラスセラミックス、
窒化アルミニウムセラミックス等の比誘電率が２〜１０
の材質から構成され、アンテナ素子３、給電線路４、グ
ランド層５は、Ｗ、Ｍｏ、Ｃｕ、Ａｕ、Ａｇ等の導体材
料により、周知の多層技術、例えば、誘電体基板２をガ
ラスセラミックス、給電線路４等を銅導体により構成す
る場合、誘電体基板を構成するガラスセラミック成形体
の表面に銅導体ペーストを所定位置に印刷して積層した
後、同時焼成することにより形成することができる。According to the embodiment shown in FIGS. 1 and 3, the dielectric substrate 2 in the antenna circuit board A is
For example, alumina ceramics, glass ceramics,
Relative permittivity of aluminum nitride ceramics is 2-10
The antenna element 3, the feeding line 4, and the ground layer 5 are made of a conductive material such as W, Mo, Cu, Au, and Ag, and the well-known multilayer technology, for example, the dielectric substrate 2 is made of glass ceramic When the line 4 and the like are made of a copper conductor, they can be formed by printing a copper conductor paste at a predetermined position on the surface of a glass ceramic molded body that constitutes the dielectric substrate, laminating it, and then firing it simultaneously.
【００２５】一方、高周波デバイス回路基板Ｂは、上記
の観点から誘電体基板７を誘電率が５〜５０の例えば、
アルミナセラミックス、ガラスセラミックス、窒化アル
ミニウムセラミックス等の材質、伝送線路１２やグラン
ド層１６を給電線路４等の同様の導体により構成するこ
とができる。この場合もアンテナ回路基板Ａと同様な多
層化技術により形成すればよい。その後、誘電体基板２
のキャビティ内に高周波デバイス９をエポキシ樹脂、ハ
ンダまたはＡｕ−Ｓｉ合金等の接着剤により設置する。On the other hand, in the high frequency device circuit board B, from the above viewpoint, the dielectric substrate 7 having a dielectric constant of 5 to 50, for example,
Materials such as alumina ceramics, glass ceramics, aluminum nitride ceramics, etc., and the transmission line 12 and the ground layer 16 can be formed by similar conductors such as the power supply line 4. In this case as well, it may be formed by the same multi-layering technique as the antenna circuit board A. Then, the dielectric substrate 2
The high-frequency device 9 is installed in the cavity by an adhesive such as epoxy resin, solder, or Au—Si alloy.
【００２６】なお、前記アンテナ回路基板Ａと高周波デ
バイス回路基板Ｂとは、Ａｕ−Ｓｉ合金や、Ａｕ−Ｓｎ
合金等の所望の接着剤により接合一体化することもでき
るが、望ましくは、それぞれ誘電体基板と基板内の導体
と同時焼成する場合、予め焼成前の成形体を積層一体化
した後、アンテナ回路基板Ａと高周波デバイス回路基板
Ｂとを同時焼成して形成することが望ましい。The antenna circuit board A and the high frequency device circuit board B are made of Au-Si alloy or Au-Sn.
Although it is possible to join and integrate them with a desired adhesive such as an alloy, it is desirable that when the dielectric substrate and the conductor in the substrate are simultaneously fired, the molded body before firing is laminated and integrated before the antenna circuit. It is desirable that the substrate A and the high frequency device circuit board B be formed by simultaneous firing.
【００２７】なお、図１および図３の実施例によれば、
アンテナ素子３はいずれもパッチアンテナであるが、も
ちろんアレー化して指向性等を付与してもよい。また、
高周波デバイス９には様々な機能を具備することが可能
であるが、例えば、図４の構成のように、少なくとも１
つの周波数変換器１９、高周波発振器２０を含み、望ま
しくは低雑音増幅器２１や増幅器２２を具備し、パッケ
ージの外部接続端子１７から出力される信号は、アンテ
ナ素子３で受信または放射される信号周波数よりも低い
周波数におとし、伝送損失を小さくすることが望まし
い。According to the embodiment shown in FIGS. 1 and 3,
The antenna elements 3 are all patch antennas, but of course they may be arrayed to give directivity or the like. Also,
The high-frequency device 9 can have various functions. For example, as shown in the configuration of FIG.
The signal output from the external connection terminal 17 of the package includes a frequency converter 19 and a high frequency oscillator 20, and preferably includes a low noise amplifier 21 and an amplifier 22. It is desirable to reduce the transmission loss by keeping the frequency low.
【００２８】[0028]
【発明の効果】以上説明した通り、本発明の高周波用パ
ッケージによれば、アンテナ回路基板と高周波デバイス
回路基板とを一体化して接続する線路を短縮化すること
ができるために線路での損失を最小限とすることができ
るために、アンテナ回路を具備しながらも小型でしかも
量産が可能なマイクロ波またはミリ波等の高周波を用い
たシステムに適用できる高周波用パッケージが得られ
る。As described above, according to the high frequency package of the present invention, the line connecting the antenna circuit board and the high frequency device circuit board in an integrated manner can be shortened, so that the loss in the line is reduced. Since it can be minimized, it is possible to obtain a high-frequency package that is small in size while being equipped with an antenna circuit and can be mass-produced and can be applied to a system using high frequencies such as microwaves and millimeter waves.
【図１】本発明の高周波用パッケージの基本的構造の一
実施例を示す断面図である。FIG. 1 is a cross-sectional view showing one embodiment of the basic structure of a high frequency package of the present invention.
【図２】図１のパッケージにおける電磁結合構造を説明
するための平面図である。FIG. 2 is a plan view for explaining an electromagnetic coupling structure in the package of FIG.
【図３】本発明の高周波用パッケージの基本的構造の他
の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the basic structure of the high frequency package of the present invention.
【図４】本発明の高周波用パッケージに収納する高周波
デバイスの一例を示すブロック図である。FIG. 4 is a block diagram showing an example of a high frequency device housed in the high frequency package of the present invention.
１ 高周波用パッケージ Ａ アンテナ回路基板 Ｂ 高周波デバイス回路基板 ２ 第１の誘電体基板 ３ アンテナ素子 ４ 高周波線路 ５ グランド層 ６ スロット ７ 第２の誘電体基板 ８ キャビティ ９ 高周波デバイス １０ 蓋体 １１ 伝送線路 １２ グランド層 １３ スロット １４，１５ バイアホール １６ 伝送線路 １７ 外部接続端子 1 High frequency package A antenna circuit board B High frequency device circuit board 2 First dielectric substrate 3 antenna elements 4 high frequency lines 5 ground layers 6 slots 7 Second dielectric substrate 8 cavities 9 High frequency devices 10 Lid 11 transmission lines 12 ground layer 13 slots 14,15 via holes 16 transmission lines 17 External connection terminal
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｑ 13/08 Ｈ０１Ｑ 23/00 23/00 Ｈ０１Ｌ 23/12 Ｎ (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/12 - 23/15 H01P 5/08 H01Q 13/08 H01L 23/00 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 identification code FI H01Q 13/08 H01Q 23/00 23/00 H01L 23/12 N (58) Fields investigated (Int.Cl. 7 , DB name) H01L 23/12-23/15 H01P 5/08 H01Q 13/08 H01L 23/00
Claims (3)
アンテナ素子と該アンテナ素子に給電するための高周波
線路とを形成したアンテナ回路基板と、比誘電率が５〜
１０の第２の誘電体基板の一部にキャビティを形成し、
該キャビティ内に高周波デバイスを収納し、且つ該高周
波デバイスに信号を伝達するための伝送線路を形成した
高周波デバイス回路基板とを接着剤により接合一体化、
または予め焼成前の成形体を積層一体化した後、同時焼
成して一体化してなることを特徴とする高周波用パッケ
ージ。1. An antenna circuit board having an antenna element and a high-frequency line for feeding the antenna element formed on a first dielectric substrate having a relative dielectric constant of 2 to 10, and a relative dielectric constant of 5 to 5.
Forming a cavity in a part of the second dielectric substrate 10 ;
A high-frequency device circuit board, in which a high-frequency device is housed in the cavity and a transmission line for transmitting a signal to the high-frequency device is formed, is bonded and integrated with an adhesive,
Alternatively, after pre-firing the formed bodies by layering and integrating them, simultaneous firing
A high-frequency package characterized by being formed and integrated .
イス回路基板における前記キャビティを形成するための
蓋体である請求項１記載の高周波用パッケージ。2. The high-frequency package according to claim 1, wherein the antenna circuit board is a lid for forming the cavity in the high-frequency device circuit board.
0〜０．０６λ0（λ0は真空中の波長）であることを特
徴とする請求項１または２記載の高周波用パッケージ。3. The thickness of the first dielectric substrate is 0.03λ.
The high frequency package according to claim 1, wherein the high frequency package has a wavelength of 0 to 0.06λ 0 (λ 0 is a wavelength in a vacuum).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000158825A JP3427040B2 (en) | 1996-02-29 | 2000-05-29 | High frequency package |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4252896A JP3266491B2 (en) | 1996-02-29 | 1996-02-29 | High frequency package |
| JP2000158825A JP3427040B2 (en) | 1996-02-29 | 2000-05-29 | High frequency package |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4252896A Division JP3266491B2 (en) | 1996-02-29 | 1996-02-29 | High frequency package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001028413A JP2001028413A (en) | 2001-01-30 |
| JP3427040B2 true JP3427040B2 (en) | 2003-07-14 |
Family
ID=27624528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000158825A Expired - Lifetime JP3427040B2 (en) | 1996-02-29 | 2000-05-29 | High frequency package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3427040B2 (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002003499A1 (en) * | 2000-06-30 | 2002-01-10 | Sharp Kabushiki Kaisha | Radio communication device with integrated antenna, transmitter, and receiver |
| JP2002271133A (en) * | 2001-03-09 | 2002-09-20 | Sharp Corp | High-frequency antenna and high-frequency communications equipment |
| JP3850275B2 (en) * | 2001-11-29 | 2006-11-29 | 京セラ株式会社 | Electronic component equipment |
| JP2004063664A (en) | 2002-07-26 | 2004-02-26 | Murata Mfg Co Ltd | Multilayer ceramic substrate with cavity |
| JP2004350163A (en) * | 2003-05-23 | 2004-12-09 | Anritsu Corp | Dielectric body leak wave antenna |
| JP2005086603A (en) | 2003-09-10 | 2005-03-31 | Tdk Corp | Electronic component module and its manufacturing method |
| US7057564B2 (en) * | 2004-08-31 | 2006-06-06 | Freescale Semiconductor, Inc. | Multilayer cavity slot antenna |
| JP4227589B2 (en) * | 2004-12-03 | 2009-02-18 | 日本放送協会 | Active array antenna |
| US7692590B2 (en) * | 2008-02-20 | 2010-04-06 | International Business Machines Corporation | Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s) |
| US7696930B2 (en) * | 2008-04-14 | 2010-04-13 | International Business Machines Corporation | Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s) in ring and/or offset cavities |
| US7728774B2 (en) * | 2008-07-07 | 2010-06-01 | International Business Machines Corporation | Radio frequency (RF) integrated circuit (IC) packages having characteristics suitable for mass production |
| JP5328566B2 (en) * | 2009-08-26 | 2013-10-30 | 京セラ株式会社 | Antenna substrate and IC tag |
| FR2969397B1 (en) | 2010-12-20 | 2013-09-06 | St Microelectronics Crolles 2 | INTEGRATED EMITTER-RECEIVER IN MILLIMETER WAVES |
| FR2969398B1 (en) | 2010-12-20 | 2013-01-11 | St Microelectronics Sa | INTEGRATED EMITTER-RECEIVER IN MILLIMETER WAVES |
| US8988299B2 (en) * | 2011-02-17 | 2015-03-24 | International Business Machines Corporation | Integrated antenna for RFIC package applications |
| US8901688B2 (en) * | 2011-05-05 | 2014-12-02 | Intel Corporation | High performance glass-based 60 ghz / mm-wave phased array antennas and methods of making same |
| JP6789172B2 (en) * | 2017-04-24 | 2020-11-25 | 京セラ株式会社 | RFID tag boards, RFID tags and RFID systems |
| JP6913622B2 (en) * | 2017-12-19 | 2021-08-04 | 京セラ株式会社 | RFID tag boards, RFID tags and RFID systems |
| CN212991332U (en) | 2018-02-28 | 2021-04-16 | 株式会社村田制作所 | Antenna module and communication device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0583011A (en) * | 1991-09-25 | 1993-04-02 | Sumitomo Electric Ind Ltd | Input / output coupling device for semiconductor device package |
| JP3141692B2 (en) * | 1994-08-11 | 2001-03-05 | 松下電器産業株式会社 | Millimeter wave detector |
| JP3155901B2 (en) * | 1995-03-14 | 2001-04-16 | 三菱電機株式会社 | High frequency substrate device |
| JPH08250913A (en) * | 1995-03-15 | 1996-09-27 | Honda Motor Co Ltd | Mmic package assembly |
| JP3217677B2 (en) * | 1995-12-28 | 2001-10-09 | 京セラ株式会社 | High frequency semiconductor device |
| JP3266491B2 (en) * | 1996-02-29 | 2002-03-18 | 京セラ株式会社 | High frequency package |
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| JP2001028413A (en) | 2001-01-30 |
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