JP3419280B2 - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To contain red system luminous wavelength components having little changes in a color tone or a brightness for temperature changes by a method wherein a specific luminous element and a specific fluorescent substance are selected. SOLUTION: A main peak of luminous spectrum from a luminous element 102 is within 365nm-530nm. Further, a fluorescent substance is at least a type selected from aMgO.bLi2 O.Sb2 O3 :cMn, dMgO.eTiO2 :fMn,gMgO.hMgF2 .GeO2 : iMn,jCaO. kM1O.TiO2 :1Pr, mM22 O3 .(P1-n Vn )2 O5 :oEu2 O3 , M32 O2 S:pEu, M42 O:qEu (wherein a-q are composition ratios, and M1 is at least a type selected from Zn, Mg, Sr and Ba, and M2 is at least a type selected from La, Y, Sc, Lu and Gd, and M3 is at least a type selected from La, Y, Ga, Sc and Lu, and M4 is at least a type selected from La, Y and Ga).

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to an LED display,
Backlight light source, traffic light, optical sensor, optical printer
Useful for heads, illuminated switches and various indicators.
The present invention relates to a light emitting device that can emit red light. Special
In addition, high brightness and highly efficient light emission is possible regardless of the usage environment.
And little change in color tone or brightness with temperature
The present invention relates to a light emitting device and a display device using the same. [0002] 2. Description of the Related Art Light emitting diodes (hereinafter also referred to as LEDs)
And laser diodes (hereinafter also called LD) are small
It emits bright colors efficiently and efficiently. In addition, semiconductor elements
Since he is a child, he does not have to worry about running out of ball. Vibration and ON / OFF
It has the feature of being resistant to repeated lighting. Therefore each
It is used as a seed indicator and various light sources. Most
Near, super high brightness and high efficiency light emitting diode as RGB
(Red, green, blue) and other light emitting diodes
Was done. In conjunction with this, LED displays using the three primary colors of RGB
Display takes advantage of features such as power saving, long life and light weight
It is developing rapidly. [0003] Light emitting diodes are the semiconductors used in the light emitting layer.
Depending on the body material, formation conditions, etc.
It is possible to emit an emission wavelength. Also,
It has an excellent monochromatic peak wavelength. However, at present, out of visible light
A light-emitting element that can emit blue and green relatively short wavelengths with high brightness
Only nitride-based compounds have been put to practical use.
In addition, light emitting devices using nitride-based compound semiconductors are various.
It is possible to emit light with high luminance at the emission wavelength of
Currently, it can emit light with high efficiency in the long wavelength side of the visible region
It is difficult to form a stable product. On the other hand, a red light emitting device capable of emitting light with high brightness
GaAlAs, GaAsP, AlG
Those having a light emitting layer such as aInP are used. So
Use the same semiconductor for RGB (red, green, blue) light emission
And cannot emit light with high luminance. Blue or green
In this regard, it is possible to use substantially the same semiconductor material.
Semiconductor material different from blue and green for red
Will be charged. If the semiconductor material is different,
The pressure is different. Therefore, it is necessary to secure power individually
And the circuit configuration becomes complicated. Also, if the semiconductor material is different
Change rate of color tone and brightness due to temperature change due to
Are very different from each other. FIG. 9 shows a nitride compound semiconductor.
Light-emitting element (A is blue, B is green)
A device in which the characteristics of all other light-emitting elements (C is red) are significantly different
Show body examples. Each of the RGB light emitting diodes emits light.
If a mixed color display is used, the color
If the characteristics of the luminance are largely different, the color balance and the like will be lost.
In particular, the human eye is sensitive to white and has little color
Can be identified. Therefore, semiconductors with different RGB
Emit white light using mixed color light from light emitting elements made of materials
The white balance due to temperature changes
Problem. These color and brightness changes are displayed
In displays, optical sensors and optical printers
It is a big problem. [0007] Furthermore, light-emitting diodes have excellent monochromatic characteristics.
Light source, etc.
For this purpose, each LED chip that can emit light such as RGB
It is necessary to emit light in close proximity to each other to diffuse and mix colors.
Such light emitting diodes emit various colors freely.
It is effective as a light-emitting device for
Blue-green and yellow when emitting only any color
Color light emitting diodes, red, green and blue light emitting diodes
A photodiode must be used. LED switch
The top is a semiconductor, and the variation in color tone and brightness is still considerable
is there. Further, as described above, the current is
The desired light, such as white light, must be adjusted.
No. In the case of light-emitting elements using different semiconductor materials,
Differences in temperature characteristics and changes over time are significantly different, such as color tone
May change in various ways. White light at start of use
Even if you set it to be the same, light emitting diode
When color shift, uneven brightness, etc. occur due to own heat generation
There is. In addition, uniform mixing of light emission from LED chips
Otherwise, color unevenness may occur. [0009] The applicant has previously determined the emission color of the LED chip as a fluorescent light.
Japanese Patent Application Laid-Open No.
No. 152609, JP-A-7-99345, etc.
The light emitting diode described in (1) was developed. These luminescence
An LED chip that emits blue light with a diode
When used, other luminescent colors can be efficiently emitted. Specifically, the energy band energy of the light emitting layer
LED chip with large gap at the end of the lead frame
Place it on the provided cup. LED chip,
Metal stem or metal post with LED chip
And each is electrically connected. And LED chip
From the LED chip in the resin mold member that covers the
Formed by containing a fluorescent substance that absorbs light and converts wavelength.
I have. This allows the LED chip to emit blue light
A light-emitting diode that can absorb and emit another color with high brightness
Can be Excited by light emission wavelength from light emitting element
Fluorescent substances are fluorescent dyes, fluorescent pigments, and even organic and inorganic
Various things such as compounds can be mentioned. Also, fluorescent material
May have long afterglow properties or may have substantially no afterglow properties.
Furthermore, the emission wavelength from the light-emitting element can be changed from the shortest wavelength
Convert to longer wavelength or emission wavelength from light emitting device
There is one that converts light from a long wavelength to a short wavelength.
You. [0012] However, those having long wavelengths
Conversion efficiency is extremely poor when converting from
Not suitable for practical use. In addition, since multiple-stage excitation is required,
The light emission amount does not increase linearly with respect to the emission wavelength amount. Also, departure
The fluorescent substance placed close to the periphery of the optical element is
The light intensity is about 30 to 40 times higher.
Be sent. In particular, LED chips that are light-emitting elements
Of a fluorescent substance using a semiconductor
When conversion efficiency is improved or the amount of fluorescent substance used is reduced
When the light emitted from the LED chip is in the visible light range,
Even in this case, the light energy is inevitably high. To the ultraviolet
Light energy becomes extremely high. In this case, the emission intensity
When used for a longer period of time, the fluorescent substance itself
Some are easily degraded. When the fluorescent material deteriorates, the color tone
It may shift, or the light extraction efficiency may decrease.
is there. [0013] A fluorescent substance similarly provided near the light emitting element
The quality is high, such as the temperature rise of the light emitting element and heating from the external environment.
Is also exposed. When using as a light emitting diode,
Generally, the outer ring is covered with resin mold
It is not possible to completely prevent the ingress of moisture from the environment.
Also, it can completely remove moisture adhering during manufacturing.
I can't. Depending on the fluorescent substance, such moisture
Deterioration of fluorescent materials by high-energy light or heat
May promote. In addition, ionic organic dyes
In the vicinity of the chip, electrophoresis occurs due to a DC electric field,
The color may change. Further, the ion generated by the decomposition of the fluorescent substance
The light emitting element contaminates the light emitting element or the wave from the light emitting element
Conductors for electrically connecting cups or light emitting elements that reflect the length
When the electrical wires are deteriorated and the extraction efficiency is reduced
There is also. Therefore, the present invention solves the above problems,
A reddish color with little change in color tone or brightness with temperature change
An object of the present invention is to provide a light emitting device including a light wavelength component.
In addition, it emits light even under high brightness and long use environment
Emission wavelength component of red system with extremely small decrease in luminous efficiency and color shift
It is an object of the present invention to provide a light-emitting device including a light-emitting device. Special
In addition, nitride compounds that can emit other colors different from red
Emits red emission wavelength component with various characteristics in line with semiconductor
It is to provide a possible light emitting device. [0016] The present invention has at least the following features.
A light-emitting element in which the optical layer is a gallium nitride-based compound semiconductor;
Absorbs at least part of the emission wavelength emitted by the light emitting element
And a fluorescent substance that emits light after wavelength conversion.
is there. In particular, the emission spectrum from the light emitting element has a main peak
Within 365 nm to 530 nm as well as fluorescence
The substance is aMgO · bLi_TwoO ・ Sb_TwoO_Three: CMn, dM
gO ・ eTiO_Two: FMn, gMgO.hMgF_Two・ Ge
O_Two: IMn, jCaO · kM1O · TiO_Two: LPr,
mM2_TwoO _Three・ (P_1-nV_n)_TwoO_Five: OEu_TwoO_ThreeSelected from
Is at least one kind. However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.00
1 ≦ c ≦ 0.05, 1 ≦ d ≦ 3, 1 ≦ e ≦ 2, 0.00
1 ≦ f ≦ 0.05, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦ 1,
0.003 ≦ i ≦ 0.05. M1 is Zn, Mg, Sr,
At least one selected from Ba. j + k + 1 = 1,
0 <k ≦ 0.4, 0.00001 ≦ l ≦ 0.2. M2 is
At least one selected from La, Y, Sc, Lu, and Gd
One kind. 0.5 ≦ m ≦ 1.5, 0 <n ≦ 1, 0.001 ≦
o ≦ 0.5. A light emitting device according to a second aspect of the present invention has a light emitting device.
The optical layer is at least a nitride compound semiconductor and emits visible light.
Excited by the light emitting element that emits light and the visible light emission wavelength of the light emitting element
A fluorescent substance that emits fluorescence with a longer wavelength than the emission wavelength
And In particular, the light emitting device is an n-type nitride compound semiconductor.
Between the body layer and the p-type nitride-based compound semiconductor layer.
Non-doped InαAlβGa with heterostructure_1-α_-
having an active layer of βN layer,_1-α_-βN layer
Α value of 0 or more, β value of 0 or more, α + β value of less than 1, I
nαAlβGa_1-α_-The thickness of the βN layer is 100 Å
And the composition formula of the fluorescent substance is aMgO
・ BLi_TwoO ・ Sb_TwoO_Three: CMn, dMgO.eTi
O_Two: FMn, gMgO.hMgF_Two・ GeO_Two: IMn
At least one selected from the group consisting of: However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.00
1 ≦ c ≦ 0.05, 1 ≦ d ≦ 3, 1 ≦ e ≦ 2, 0.00
1 ≦ f ≦ 0.05, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦ 1,
0.003 ≦ i ≦ 0.05. A light emitting device according to a third aspect of the present invention is a light emitting device.
The optical layer is at least a nitride compound semiconductor and emits visible light.
Excited by the light emitting element that emits light and the visible light emission wavelength of the light emitting element
A fluorescent substance that emits fluorescence with a longer wavelength than the emission wavelength
And In particular, the light emitting device is an n-type nitride compound semiconductor.
Between the body layer and the p-type nitride-based compound semiconductor layer.
InαAlβGa containing heterostructure and containing p-type impurity_1-
α_-having an active layer of βN layer,_1-α_-βN
Α value of the layer is 0 or more, β value is 0 or more, α + β value is less than 1,
InαAlβGa_1-α_-The thickness of the βN layer is 100 Å
Or more, and the composition formula of the fluorescent substance is aMg
O ・ bLi_TwoO ・ Sb_TwoO_Three: CMn, dMgO.eTi
O_Two: FMn, gMgO.hMgF_Two・ GeO_Two: IMn
At least one selected from the group consisting of: However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.00
1 ≦ c ≦ 0.05, 1 ≦ d ≦ 3, 1 ≦ e ≦ 2, 0.00
1 ≦ f ≦ 0.05, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦ 1,
0.003 ≦ i ≦ 0.05. A light emitting device according to a fourth aspect of the present invention is a light emitting device.
The optical layer is at least a nitride compound semiconductor and emits ultraviolet light.
Excited by the emitting light emitting element and the ultraviolet emission wavelength of the light emitting element
A fluorescent substance that emits fluorescence with a longer wavelength than the emission wavelength
And In particular, the light emitting device is an n-type nitride compound semiconductor.
Between the body layer and the p-type nitride-based compound semiconductor layer.
InαGa containing heterostructure and containing n-type impurity_1-αN layer
Active layer having an n-type impurity concentration of 5 × 10¹⁷/ Cm^Three
Less than InαGa_1-α value of αN layer is larger than 0 and 0.1
Hereinafter, InαGa_1-The thickness of the αN layer is 100 Å
And below 1000 Angstroms
In addition, the composition formula of the fluorescent substance is gMgO.hMgF._Two・ Ge
O_Two: IMn, jCaO · kM1O · TiO_Two: LPr,
mM2_TwoO_Three・ (P_1-nV_n)_TwoO_Five: OEu_TwoO_Three, M3_TwoO_Two
S: pEu, M4_TwoO: qEu, less selected from
Both are a kind. However, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦ 1,
0.003 ≦ i ≦ 0.05. M1 is Zn, Mg, Sr,
At least one selected from Ba. j + k + 1 = 1,
0 <k ≦ 0.4, 0.00001 ≦ l ≦ 0.2. M2 is
At least one selected from La, Y, Sc, Lu, and Gd
One kind. 0.5 ≦ m ≦ 1.5, 0 <n ≦ 1, 0.001 ≦
o ≦ 0.5. M3 is selected from La, Y, Ga, Sc and Lu.
At least one selected. 0.0005 ≦ p ≦ 0.1.
M4 is at least one selected from La, Y, and Ga.
0.0005 ≦ q ≦ 0.1. A light emitting device according to a fifth aspect of the present invention is a light emitting device.
The optical layer is at least a nitride compound semiconductor and emits ultraviolet light.
Excited by the emitting light emitting element and the ultraviolet emission wavelength of the light emitting element
A fluorescent substance that emits fluorescence with a longer wavelength than the emission wavelength
And In particular, the light emitting device is an n-type nitride compound semiconductor.
Between the body layer and the p-type nitride-based compound semiconductor layer.
InδGa that has a heterostructure and contains n-type impurities_1-δN layer
Active layer with an impurity concentration of 5 × 10¹⁷/ Cm^ThreeLess than
Above, InδGa_1-δ value of δN layer is greater than 0 and 0.1 or less
Bottom, InδGa_1-The thickness of the δN layer is 100 Å
And the composition formula of the phosphor is gMgO · h
MgF_Two・ GeO_Two: IMn, jCaO.kM1O.Ti
O_Two: LPr, mM2_TwoO_Three・ (P_1-nV_n)_TwoO_Five: OEu_Two
O_Three, M3_TwoO_TwoS: pEu, M4_TwoO: selected from qEu
Is at least one kind. However, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦ 1,
0.003 ≦ i ≦ 0.05. M1 is Zn, Mg, Sr,
At least one selected from Ba. j + k + 1 = 1,
0 <k ≦ 0.4, 0.00001 ≦ l ≦ 0.2. M2 is
At least one selected from La, Y, Sc, Lu, and Gd
One kind. 0.5 ≦ m ≦ 1.5, 0 <n ≦ 1, 0.001 ≦
o ≦ 0.5. M3 is selected from La, Y, Ga, Sc and Lu.
At least one selected. 0.0005 ≦ p ≦ 0.1.
M4 is at least one selected from La, Y, and Ga.
0.0005 ≦ q ≦ 0.1. [0026] BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have concluded various experiments.
As a result, light with a light energy that emits at a relatively high emission wavelength
Light emission that converts the emission wavelength from the device with a fluorescent substance
In the device, select a specific light emitting element and a specific fluorescent substance
High brightness and long-term light effect
Found that it can emit light with high brightness by preventing the rate reduction and color shift.
The present invention has been accomplished. In particular, nitride used in the light emitting device of the present invention
-Based compound semiconductors range from ultraviolet light to blue and green (emission wavelength
Efficient light emission with main peak from 365nm to 530nm)
can do. However, when viewed from fluorescent materials,
The excitation wavelength range of the light source is extremely narrow
It has a workability. Therefore, the luminous intensity as a light emitting device
Or selected specific luminescence to improve luminous efficiency
A combination with an element and a specific fluorescent substance is required. That is, as a fluorescent substance used in a light emitting device,
The 1. Excellent light fastness is required. In particular, luminescence
Light-emitting devices because they are strongly radiated from small areas such as devices
The fluorescent substance provided in contact with or in close proximity
Withstands strong irradiation intensity of about 30 to 40 times
Need to be If the light emitting element emits light in the ultraviolet region,
Durability to outside lines is also required. 2. To improve the luminous efficiency, nitride-based
Efficiently excited by emission wavelength from compound semiconductor
That. 3. It can emit light efficiently by excitation
When. 4. When placed near the light emitting element, the temperature
Good characteristics. 5. Depending on the usage environment of the light emitting diode
5. It has weatherability Do not damage the light emitting elements. [7] If the color tone is the composition ratio or multiple fluorescent substances
It has features such as being able to change continuously with the mixing ratio.
Is required. The present invention is considered to satisfy these conditions.
Is a high energy band gap in the light emitting layer as a light emitting element.
Compound semiconductor device having a lamp as a fluorescent material
AMgO ・ bLi_TwoO ・ Sb_TwoO_Three: CMn, dMgO
・ ETiO_Two: FMn, gMgO.hMgF_Two・ Ge
O_Two: IMn, jCaO · kM1O · TiO_Two: LPr,
mM2_TwoO_Three・ (P_1-nV_n)_TwoO_Five: OEu_TwoO_Three, M3_TwoO_Two
S: pEu, M4_TwoO: at least selected from qEu
Also use a kind. As a result, the high
Energy light with high brightness in the vicinity of a long time.
Very little color shift of emission color and decrease in emission brightness
It has a long-wavelength component, which is a red emission wavelength component, with high brightness
Light emitting device. As an example of a specific light emitting device, a chip
The LED is shown in FIG. Chip type LED housing 2
LED chip 2 using gallium nitride based semiconductor in 04
02 is die-bonded using epoxy resin etc.
is there. LED chip with gold wire as conductive wire 203
202 and the electrodes 205 provided on the housing.
Each is electrically connected. 5MgO ・ 3Li_TwoO
・ Sb_TwoO_FiveAs Mg_FiveLi₆Sb_TwoO₁₃: Epoxy Mn
LED chips, conductive materials mixed and dispersed in resin
Mold member that protects wires etc. from external stress
As 201, it is uniformly filled and cured. like this
LED by supplying power to light emitting diode
The chip 202 is caused to emit light. From the LED chip 202
Light emission from a fluorescent substance excited by the light emission of
Between light emission from the fluorescent substance and light from the LED chip 202
A light emitting device capable of emitting mixed color light can be obtained. Less than
Hereinafter, the components of the present invention will be described in detail. (Fluorescent substance) The fluorescent substance used in the present invention
As a light emitting element that is excited by the light emitting wavelength of the light emitting element
A fluorescent substance that emits light at a wavelength longer than the excitation wavelength
U. Specific fluorescent substances include aMgO.bLi_TwoO
・ Sb_TwoO_Three: CMn, dMgO.eTiO_Two: FMn,
gMgO ・ hMgF_Two・ GeO_Two: IMn, jCaO · k
M1O ・ TiO _Two: LPr, mM2_TwoO_Three・ (P_1-nV_n)_Two
O_Five: OEu_TwoO_Three, M3_TwoO_TwoS: pEu, M4_TwoO: qE
at least one selected from u. (However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.0
01 ≦ c ≦ 0.05, 1 ≦ d ≦ 3, 1 ≦ e ≦ 2, 0.0
01 ≦ f ≦ 0.05, 2.5 ≦ g ≦ 4.0, 0 ≦ h ≦
1, 0.003 ≦ i ≦ 0.05. M1 is Zn, Mg, S
at least one selected from r and Ba. j + k + 1 =
1, 0 <k ≦ 0.4, 0.00001 ≦ l ≦ 0.2. M
2 is at least one selected from La, Y, Sc, Lu, and Gd.
One kind. 0.5 ≦ m ≦ 1.5, 0 <n ≦ 1, 0.00
1 ≦ o ≦ 0.5. M3 is La, Y, Ga, Sc, Lu
At least one selected from 0.0005 ≦ p ≦ 0.
One. M4 is at least one selected from La, Y, and Ga
seed. 0.0005 ≦ q ≦ 0.1. ) From fluorescent material
In order to emit only visible light to the outside, nitride-based
Excitation wavelength emitted from compound semiconductor to excite fluorescent substance
To the ultraviolet region. Alternatively, the excitation wavelength emitted by the light emitting device
Is substantially all converted with a fluorescent substance. Moreover,
Pigs light emitted by the light emitting element and not converted by the fluorescent substance
Visible from fluorescent material
Only the area light can be emitted to the outside. On the other hand, the visible light emitted from the light emitting element
When both the length and the fluorescence from the fluorescent substance are emitted outside,
Visible emission wavelength and fluorescent substance from light emitting element outside light emitting device
It is necessary that the fluorescent light from the
You. Therefore, the fluorescent substance is
The light emitting element is confined within the phosphor layer
An opening through which light from the light emitting element is transmitted is formed in the light material layer by 1 to
A light emitting device having two or more light emitting devices may be used. Also, fluorescent
The material layer is formed thin enough to transmit light from the light-emitting element.
Let Similarly, the fluorescent substance powder is contained in resin and glass.
Even if it is formed thin enough to transmit light from the light emitting element,
good. Depending on the ratio of fluorescent substance to resin, coating and filling amount,
Adjustment and selection of the emission wavelength of the light emitting device
To provide any color tone including red emission wavelength
Can be The distribution of the content of the fluorescent substance is determined by the color mixing property and the durability.
May also be affected. That is, the fluorescent material is contained
Light-emitting element from the coating side or the front side of the mold member
If the distribution concentration of the fluorescent substance is high toward
Less susceptible to external forces, moisture, etc.
It is easy to suppress deterioration due to moisture. On the other hand, the inclusion of fluorescent substances
Distribution is distributed from light emitting element to mold member surface side
If the concentration increases, it is affected by moisture from the external environment.
Easy to generate, but the influence of heat generation from the light emitting element, irradiation intensity, etc.
Can be reduced. Such a fluorescent substance
The cloth is made of a material containing fluorescent material, forming temperature, viscosity and fluorescent
By adjusting the shape, particle size, particle size distribution, etc. of the substance
Can be formed in various ways. Therefore, the terms of use
Various selection of distribution concentration of fluorescent substance depending on the situation
Can be. The purpose of suppressing and controlling such distribution with good dispersibility
And the average particle size of the fluorescent substance is 0.2 μm to 0.7 μm.
Preferably. Further, when the particle size distribution is 0.2 <log
Preferably, the bear is <0.45. The fluorescent substance of the present invention is particularly in contact with a light emitting element.
(Ee) = 3
Wcm^-2More than 10W · cm^-2High efficiency even in the following
A light-emitting device having sufficient light resistance can be obtained. (AMgO.bLi_TwoO ・ Sb_TwoO_Three: CMn
Method for producing fluorescent substance) aMgO.bLi_TwoO ・ Sb_TwoO_Three:
An example of a method for producing a cMn fluorescent material is MgCO_Three, L
i_TwoCO_Three, Sb_TwoO_Three, MnCO_ThreeEach as raw material
5: 3: 1: used in a molar ratio of 0.001 to 0.05
You. Mix each oxide thoroughly using a ball mill or the like.
Combine and pack into an alumina crucible. Crucible from 1250 to 1
Calcined at 400 ° C for about 2 hours in air and oxygen
Fired at 560 ° C for 10 hours or more in atmosphere to obtain fired product
Was. Wash the calcined product by ball milling in methanol,
Separation, drying, and finally through a sieve_Five
Li₆Sb_TwoO₁₃: Mn phosphor can be formed
You. In particular, in order to emit light with high luminance, 2 ≦ a ≦ 6,
It is preferable that 2 ≦ b ≦ 4 and 0.001 ≦ c ≦ 0.05.
Good. This fluorescent substance emits light from the light emitting device of the present invention.
It is easy to be excited by visible light on the short wavelength side which is long. (DMgO.eTiO)_Two: FMn fluorescent substance
Generation method) dMgO.eTiO_Two: Raw of fMn fluorescent material
An example of a forming method is MgCO_Three, TiO_Two, MnCO_ThreeTo
As raw materials, each of 2: 1: 0.001-0.05
Used at the same ratio. Use a ball mill for each oxide
Mix well and pack into an alumina crucible or the like. 1 crucible
Baking for about 2 hours in air at a temperature of 250 to 1400 ° C
And further baked at 560 ° C. for 10 hours or more in an oxygen atmosphere.
To obtain a baked product. Ball-mill the calcined product in methanol
Washing, separating, drying and finally passing through a sieve for use in the present invention.
Mg_TwoTiO_Four: Mn phosphor can be formed
Wear. In particular, in order to emit light with high luminance, 1 ≦ d ≦
3, 1 ≦ e ≦ 2, 0.001 ≦ f ≦ 0.05
Is preferred. This fluorescent substance is also emitted from the light emitting device of the present invention.
It is easily excited by visible light on the short wavelength side, which is the light wavelength. (GMgO.hMgF_Two・ GeO_Two: IMn
Method for producing fluorescent substance) gMgO.hMgF_Two・ GeO_Two: I
As an example of a method for producing a Mn phosphor, MgCO_Three, Ge
O_Two, MnCO_Three3.5: 0.5:
1: Used in a molar ratio of 0.001 to 0.05. Each
These oxides are thoroughly mixed using a ball mill, etc.
Pack in a crucible or similar. Crucible at 1100 to 1250 ° C
Firing in air at 560 ℃
Firing for at least 10 hours to obtain a fired product. Put the baked product underwater
Mill, wash, separate, dry, and finally pass through sieve
3.5MgO.0.5MgF used for light_Two・ Ge
O_Two: Mn fluorescent substance can be formed. This firefly
The peak wavelength of the light substance is 658 nm. In particular, high shine
2.5 ≦ g ≦ 4.0, 0 ≦ h
≦ 1, 0.003 ≦ i ≦ 0.05
No. This fluorescent substance has a short wavelength side from the light emitting device of the present invention.
It is easily excited in the visible and ultraviolet regions. (JCaO.kM1O.TiO)_Two: LPr
Method for producing fluorescent substance) jCaO · kM1O · TiO_Two: L
As a method for producing the Pr fluorescent substance, CaCO_Three, TiO_Two,
Pr₆O₁₁, H_ThreeBO_ThreeMixed with a ball mill from 1200
It is fired in the air at 1400 ° C. for about 2 hours. Powdered baked goods
Crushed and washed, separated and dried, and finally passed through a sieve for use in the present invention
CaTiO_Three: Forming Pr fluorescent material
Can be. The peak wavelength of this fluorescent substance is 614 nm.
You. M1 is selected from Zn, Mg, Sr and Ba.
At least one of these elements, and any element
Can be In order to emit light with high brightness,
j + k + 1 = 1, 0 <k ≦ 0.4, 0.00001 ≦ l
The range of ≦ 0.2 is preferred. This fluorescent substance is used in the present invention.
It is suitably excited and emits light in the ultraviolet region from the optical element. (MM2_TwoO_Three・ (P_1-nV_n)_TwoO_Five: OEu
_TwoO_ThreeMethod for producing fluorescent substance) mM2_TwoO_Three・ (P_1-nV_n)
_TwoO_Five: OEu_TwoO_ThreeAs a method for producing a fluorescent substance, Y_TwoO_Three,
Eu_TwoO_Three, (NH_Four)_TwoHPO_Four, V_TwoO_FiveThe ball mill blend
And packed in an alumina crucible at 1100 to 1400 ° C for 2
Bake in air for about an hour. Ball mill of baked products in water
Crushed, washed, separated, dried and finally passed through a sieve
Y (PV) O used in the invention_Four: Forming Eu fluorescent material
Can be done. The peak wavelength of this fluorescent substance is 62
0 nm. M2 is Y, La, Sc, Lu, G
at least one element selected from d.
Light can be emitted similarly. It also emits light with high brightness.
0.5 ≦ m ≦ 1.5, 0 <n ≦ 1, 0.0
The range of 01 ≦ o ≦ 0.5 is preferable. This fluorescent material is
The light emitting device of the present invention emits light by being suitably excited in the ultraviolet region.
You. (M3_TwoO_TwoS: Method for producing pEu fluorescent substance)
M3_TwoO_TwoAn example of a method for producing the S: pEu fluorescent substance is Y_Two
O_ThreeAnd Eu_TwoO_ThreeIs dissolved in hydrochloric acid and coprecipitated as nitrate.
You. Eu at this time_TwoO_ThreeThe amount is preferably 0.1 to 20 mol%.
Good. This precipitate is dried at 800-1000 ° C in air.
Fired to form oxide. Sulfur and sodium carbonate are added to the obtained oxide.
And flux in an alumina crucible
Bake at a temperature of 0 ° C to 1200 ° C for 2 to 3 hours
Obtain a fired product. The baked product is pulverized, washed, separated and dried.
Y used in the present invention through a sieve_TwoO_TwoS: Eu fluorescence
A substance can be formed. The peak of this fluorescent substance
The wavelength is 627 nm. M3 is Y, La, G
What is at least one selected from a, Sc, and Lu
Light can be emitted from these elements as well. Also high
In order to emit light at a luminance, 0.0005 ≦ p ≦ 0.1
A range is preferred. This fluorescent substance is obtained from the light emitting device of the present invention.
It is preferably excited in the ultraviolet region to emit light. (M4_TwoO: method for producing qEu fluorescent substance) M
4_TwoAs an example of the method of producing the O: qEu fluorescent substance, Y:_TwoO_ThreeWhen
Eu_TwoO_ThreeBoron as flux to dry for 3 hours
Mix. The mixed raw material is air at 1200 to 1600 ° C
Baking for about 6 hours to obtain a baked product. Wet products are fired
Disperse by milling, wash, disperse, dry, dry sieve
Y used in the present invention_TwoO_Three: Eu fluorescent substance
Can be formed. The peak wavelength of this fluorescent substance is
611 nm. M4 is selected from Y, La and Ga.
At least one selected element, and any element
Can be lighted. Also, in order to emit light with high brightness
Is preferably in the range of 0.0005 ≦ q ≦ 0.1. this
The fluorescent substance is preferably excited in the ultraviolet region from the light emitting device of the present invention.
It wakes up and emits light. (These used together with the fluorescent substance of the present invention)
Other fluorescent substances) The fluorescent substance used in the present invention is exposed to ultraviolet rays.
In addition to emitting light more efficiently, it is effective at longer wavelengths of visible light.
Includes those that can emit light efficiently. Therefore, the light emitting element
Excited by excitation wavelength, can emit red light emitting component
Used as a light emitting device using nitride-based compound semiconductor
Can be In addition to the fluorescent substance of the present invention, such as light resistance
Emission wavelength from light emitting element while having characteristics equivalent to the present invention
Which can emit light of another wavelength different from that of the present invention when excited by
Light substances can also be added. Contains multiple fluorescent materials
To increase the RGB wavelength components of light from the light emitting device.
Emit various light colors, including red light wavelengths
It can also be done. In addition to the fluorescent substance of the present invention,
As a fluorescent material that can efficiently emit visible light
Yttrium aluminum gane activated by um
Fluorescent materials. Activated by cerium
Yttrium aluminum garnet fluorescent material
Has the same light resistance as the fluorescent substance used in the present invention.
While receiving blue light, which is a short wavelength of visible light,
Emits light. Blue from nitride-based compound semiconductors and cerium
Activated by yttrium aluminum garnet
Light resistance and high brightness by mixing color of yellow fluorescent material with yellow
In addition, white light emission with high color rendering can be achieved. Yttrium Al activated with cerium
Various substitutions for minium-garnet fluorescent materials
Possible substances are mentioned. Specifically, (Re_1-xS
m_X)_Three(Al_1-yzIn_yGa_z)_FiveO₁₂: Ce (however, 0
≦ x <1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, 0 ≦ y + z ≦ 1,
Re is a small number selected from the group consisting of Y, Gd, and La.
It is at least a kind of element. ) Fluorescent substance
Can be (Re_1-xSm_X)_Three(Al_1-yzIn_yG
a_z)_FiveO₁₂: Ce is garnet structure, so heat, light and light
Resistant to water and moisture, with 450 nm excitation spectrum peak
Can be brought closer. The emission peak is 530n.
m and a broad emission spectrum near
Wear. In addition, a part of Al in the composition is replaced with Ga.
Shifts the emission wavelength to shorter wavelengths, and changes part of Y in the composition.
By substituting with Gd, the emission wavelength shifts to a longer wavelength.
You. By changing the composition in this way, the emission color can be increased to some extent
It is also possible to adjust continuously. In addition, LE using nitride-based compound semiconductor
D chip and yttrium al activated by cerium
Rare earth element in minium-garnet fluorescent material (YAG)
Fluorescent material containing elemental samarium (Sm)
By doing so, the light efficiency can be further improved. Such fluorescent substances include Y, Gd, Ce,
Oxide or high as a raw material of Sm, La, Al and Ga
Use compounds that readily become oxides at elevated temperatures and
The raw materials are obtained by mixing stoichiometrically. Or Y, Gd,
Dissolves rare earth elements of Ce, La and Sm in acid at stoichiometric ratio
The solution obtained by co-precipitating the dissolved solution with oxalic acid
Mixing precipitated oxide with aluminum oxide and gallium oxide
To obtain a mixed raw material. Fluoride as flux
An appropriate amount of fluoride such as ammonium is mixed into a crucible and emptied.
Bake for 2-5 hours at 1350-1450 ° C in air
To obtain a fired product, and then ball mill the fired product in water.
Obtained by washing, separating, drying and finally sieving
Can be. Yttrium Al activated with cerium
Minium-garnet-based fluorescent materials use yttrium
Emission wavelength on long wavelength side
Although it moves, the luminance decreases rapidly when the replacement amount is increased.
Therefore, the fluorescent substance of the present invention is ion-activated with cerium.
In addition to thorium, aluminum and garnet fluorescent materials
By using it, it contains a more reddish luminescent component
A white or the like can be obtained with high luminance. Similarly, fluorescence
By adjusting the mixing ratio of the substances, a pink color etc. is generated.
It can also be lighted. Also, the light emitted from the nitride-based compound semiconductor is
When the emission wavelength is in the ultraviolet range, the fluorescent substance of the present invention
Adds a fluorescent substance that can emit blue or green light in response to ultraviolet light
It is also possible to obtain an arbitrary luminescent color such as white. Fluorescent material
The desired color can be obtained by the mixing amount of
You. Specifically, Sr is used as a fluorescent substance capable of emitting blue light.
_TwoP_TwoO₇: Eu, Sr_Five(PO_Four)_ThreeCl: Eu, (SrC
aBa)_Three(PO_Four)₆Cl: Eu, BaMg_TwoAl
₁₆O₂₇: Eu, SrO ・ P_TwoO_Five・ B_TwoO_Five: Eu, (Ba
Ca)_Five(PO_Four)_ThreeCl: Eu and the like are preferred.
You. ZnSiO as a fluorescent substance capable of emitting green light_Four: M
n, Zn_TwoSiO_Four: Mn, LaPO_Four: Tb, SrAl_Two
O_Four: Eu and the like are preferable. Can emit white light
YVO as fluorescent substance_Four: Dy and the like are preferred.
You. When a plurality of types of fluorescent substances are used
Is a coating part and / or a mold member, etc.
Light-transmitting inorganic members such as glass and light-transmitting organic members such as resin
It may be formed by mixing a plurality of fluorescent substances inside,
It may be formed as a multilayer film for each fluorescent substance. Further
In addition, the inner wall and / or the outer surface of glass or the like which is a
The fluorescent material is applied to the wall together with the binder. After coating
Fluorescent binder removed by incineration of binders
Irradiating the substance with the excitation wavelength from the light emitting element to emit light
Can also be. Use of other fluorescent substances as described above
Arbitrarily changes the color rendering of the light emitted from the light-emitting device.
Can be made. In addition, light emission including RGB components is possible
For this reason, it is necessary to use a full-color display
For backlighting full color liquid crystal display devices
Also available. (Light emitting elements 102, 202, 302, 80)
2) The light emitting element used in the present invention is aMgO.bL
i_TwoO ・ Sb_TwoO_Three: CMn, dMgO.eTiO_Two: FM
n, gMgO.hMgF_Two・ GeO_Two: IMn, jCaO
・ KM1O ・ TiO_Two: LPr, mM2_TwoO_Three・ (P_1-nV
_n)_TwoO_Five: OEu_TwoO_Three, M3_TwoO_TwoS: pEu, M4_TwoO:
efficiency of at least one fluorescent substance selected from qEu
A nitride-based compound semiconductor that can be well excited can be used. Departure
Optical elements are mounted on a substrate by MOCVD or HVPE.
A nitride-based compound semiconductor is formed. Nitride compounds
As a semiconductor, InαAlβGa_1-α_-βN (however
Then, 0 ≦ α, 0 ≦ β, α + β ≦ 1) are formed as the light emitting layer.
Let me do it. Semiconductor structures include MIS junction, PI
Homostructure and heterostructure with N-junction, PN junction, etc.
Or a double-hetero structure. Semiconductor layer
Various emission wavelengths can be selected depending on the material and its mixed crystal ratio.
Can be. In addition, the semiconductor active layer is thinned to produce a quantum effect.
Single quantum well structure or multiple quantum well structure
You can also. For a substrate on which a nitride-based compound semiconductor is to be formed,
Is a safare whose main surface is R surface and A surface in addition to sapphire C surface.
Oia, other, spinel (MgA1_TwoO_Four) Like insulation
Substrate, SiC (including 6H, 4H, 3C), S
i, ZnO, GaAs, GaN crystal, etc.
Can be. Compare nitride-based compound semiconductors with good crystallinity
Sapphire substrate (C-plane)
Preferably used, lattice mismatch with sapphire substrate
It is desirable to form a buffer layer to correct
No. The buffer layer is made of aluminum nitride formed at low temperature.
And gallium nitride. Ma
In addition, the buffer layer is formed of a nitride-based semiconductor
It may be formed in two or more layers to control the crystallinity of the body
No. In this case, a low-temperature growth barrier is formed on the sapphire substrate.
Buffer layer, on which a second buffer layer can be
You. A second layer grown in contact with the low temperature growth buffer layer;
The buffer layer is made of an undoped nitride compound semiconductor, especially
Preferably, undoped GaN is used.
N-type impurities grown on undoped GaN
Crystallinity of nitride-based compound semiconductor doped with oxide
Can grow well. The film of this second buffer layer
Thickness is 100 Å or more and 10 μm or less.
Preferably with a thickness of 0.1 μm or more and 5 μm or less
It is desirable to make it. The second buffer layer is a clad layer.
Instead, when used as a base layer for producing a GaN substrate,
Al with v value of Al mixed crystal ratio of 0.5 or less_vGa_1-vN (0 ≦
v ≦ 0.5). V value of Al mixed crystal ratio
Exceeds 0.5, rather than crystal defects
Cracks tend to occur in itself. for that reason,
The crystal growth itself tends to be difficult. The film thickness is 10
It is more preferable to adjust it to not more than μm. In addition, this
2 is doped with n-type impurities such as Si and Ge.
May be. Pn junction using nitride compound semiconductor
As an example of a light emitting element having
First contact layer made of gallium nitride, n-type nitride
First cladding formed of aluminum gallium
Layer, indium nitride doped with p-type impurities such as Zn
Active layer formed of gallium, p-type aluminum nitride
A second cladding layer formed of lithium, p-type gallium nitride
The second contact layer formed by the above is laminated in order.
It can be. The gallium nitride based semiconductor is doped with impurities.
It shows n-type conductivity when not in use. Improve luminous efficiency
When forming a desired n-type gallium nitride semiconductor
Represents Si, Ge, Se, Te, and C as n-type dopants.
It is preferable to introduce such as appropriate. On the other hand, P-type gall nitride
P-type dopant when forming a semiconductor
Doped with Zn, Mg, Be, Ca, Sr, Ba, etc.
You. Gallium nitride-based compound semiconductors use p-type dopants.
It is difficult to make it p-type only by doping, so p-type dopant
After the introduction, heating with a furnace, low-speed electron beam irradiation or plasma irradiation
It is preferable to make it p-type by annealing by irradiation or the like.
New In particular, a wavelength of about 365 nm to 400 nm or less
When emitting light in the ultraviolet region, n-type gallium nitride and p-type
Double gallium structure between gallium nitride and n-type
Pure substance concentration is 5 × 10¹⁷/ Cm^ThreeLess than indium nitride
Gallium (InαGa_1-αN) and the film thickness is 100
Angstroms or more and 1000 Angstroms or less,
High efficiency by setting the value α of In more than 0 and 0.1 or less
Can emit light. The n-type impurity is Si,
At least one selected from S, Ge, and Se.
Thickness of 100 angstrom or more, 1000 ong
Gstrom or less, more preferably 200 gstrom or less.
Angstrom or more, 800 angstrom or less,
Most preferably at least 250 Å, 700
Ngstrom or less. Similarly, n-type gallium nitride and p-type gallium nitride
A double heterostructure between the n-type impurity and the n-type impurity
Degree 5 × 10¹⁷/ Cm^ThreeIndium gallium nitride
(InδGa_1-δN) and the film thickness is 100 Å
When the value of In is greater than 0 and less than 0.1,
To about 365nm to 400nm or less
Light can be emitted with high efficiency. In addition, n-type impurity
The object is at least selected from Si, S, Ge, and Se
It is a kind. 100 Å or more in film thickness
Preferably, more preferably, 200 Å or less
Above. As a light emitting element having a high output in the ultraviolet region, G
Assuming aN, light emission of about 365 nm can be obtained.
Wear. However, the output is very low and contains Al
Then, the output tends to further decrease. This is AlG
It is presumed to be due to the crystallinity of aN and InAlN. AlG
When the active layer is made of aN, InAlN, etc., the band gap is increased.
Clad layer with high Al mixed crystal ratio
Need to be formed. A clad layer with a high Al
Because it tends to be difficult to obtain a product with good crystallinity,
When a nitride-based compound semiconductor containing Al is used as the active layer,
The life of optical elements tends to be shorter. However, the above
Light-emitting devices that emit high-output light in the ultraviolet region
Dramatic increase in output of light-emitting element by containing a small amount of In
GaN containing a small amount of In as the active layer
Then, the output is improved 10 times or more as compared with GaN. Follow
And InαGa_1-αN, InδGa_1-α value and δ value of δN
0.1 or less, preferably 0.05 or less, more preferably
To 0.02 or less, most preferably 0.01 or less.
Adjust. Here, InGaN does not include Al at all.
Rather than the impurity level caused by diffusion etc.
(In a state where the Al content is lower than that of In).
Things. Further, the light emitting device used in the present invention is:
InαGa_1-αN, InδGa_1-Active layer containing δN
In contact with Al_XGa_1-XN (0 <X ≦ 0.4)
It may have a compound semiconductor. This Al_XGa_1-X
The N layer contacts one of the two main surfaces of the active layer.
And it is not necessary to be in contact with both.
Such Al_XGa_1-XThe X value of N is in the range of 0 <X ≦ 0.4.
Is preferable, and the range of 0 <X ≦ 0.2 is more preferable.
The range of 0 <X ≦ 0.1 is most preferable. If it is larger than 0.4, Al_XGa_1-XIn the N layer
Tend to crack. When cracks enter
Stacking other semiconductors on top of it to form an element structure
Tends to be difficult. Al_XGa_1-XThe film thickness of N is 0.
5 μm or less, more preferably 0.3 μm or less, most preferably
Preferably, it is formed with a thickness of 0.1 μm or less. 0.5 μm
Is exceeded, even if the Al mixed crystal ratio is reduced,_XGa_1-XN
This is because cracks tend to be easily formed in the inside. Nitride based alloys in which the mixed crystal ratio of Al is in a specific range
When a compound semiconductor layer is formed in contact with both main surfaces of the active layer
The thicknesses of the nitride-based compound semiconductor layers are different from each other.
It is desirable to become. Al on n-layer side_XGa_1-XThin N layer
The output tended to be improved. N layer
Side, p layer side Al_XGa_1-XN nitride compound semiconductor
They may have different Al mixed crystal ratios. Further, Al_XGa_1-XN (0 <X ≦
0.4) from the active layer rather than the nitride-based compound semiconductor
In the remote position_sGa_1-sN (0 ≦ s <0.1, j>
s, m> s) or Al_tGa_1-tN (0 <t ≦ 0.
4) It can also have a nitride-based compound semiconductor
You. GaN is preferably used for this nitride-based semiconductor.
In addition, Al_XGa_1-XSame as N nitride compound semiconductor layer
If it is formed in either the n-layer or the p-layer
Good, it is not always necessary to form both. In
_sGa_1-sN or Al_tGa_1-tThe thickness of N is particularly limited
However, when forming on the n-layer side, 10 μm
m, more preferably 8 μm or less. one
On the other hand, when it is formed on the p-layer side, it is formed thinner than on the n-layer side.
Preferably 2 μm or less, more preferably 1 μm
m or less. In addition, In_sGa_{1 -s}N, young
Kuha Al_tGa_1-tN may be plural in the same conductive layer
No. Further, at least the n-layer side or the p-layer side
On the other hand, a GaN layer with a small band gap energy
Al with large band gap energy_uGa_1-uN (0
<U ≦ 1) nitride having a superlattice structure in which layers are laminated
It may have a system semiconductor layer. Al_uGa_1-uN for active layer
It may be formed in contact with or at a position away from the active layer
It may be formed. Preferably at a location away from the active layer
The cladding layer as a carrier confinement
Can be formed as a contact layer for forming electrodes.
Is desirable. This Al_uGa_1-uN is also the same conductive side
May be more than one. In the case of a super lattice structure, a GaN layer and an Al
_uGa_1-uThe thickness of the N layer is 100 Å or less.
More preferably 70 Å or less, most preferably
Or less than 50 angstroms. 100 ON
If it is thicker than gström, each semiconductor composing the superlattice layer
The thickness of the layer exceeds the elastic strain limit, and
Cracks or crystal defects tend to occur. Ma
The lower limit of the film thickness is not particularly limited as long as it is 1 atom or more.
No. Al_uGa_1-uWhen N is a constituent layer of the superlattice,
Compared to thick ones, even those with a higher Al
Is hard to enter. This is Al_uGa_1-uN layer is elastic critical film
This is due to the fact that the film is grown with a thickness less than the thickness. Furthermore, A
l_uGa_1-uSince N and GaN can be grown at the same temperature,
Easy to super lattice. If one is InGaN, the growth atmosphere
The atmosphere must be changed, and AlGaN and InGaN
To form a superlattice with Al_uGa_1-uN and GaN
It is more difficult than when a superlattice layer is formed. GaN layer and Al_uGa_1-uWith N layer
The superlattice layer serves as an optical confinement layer and a carrier confinement layer.
When the cladding layer is formed by the
Nitride compound semiconductor with large band gap energy
Need to grow. Band gap energy
A large nitride-based compound semiconductor layer means a mixed crystal ratio of Al
It is a nitride-based compound semiconductor having a high density. High mixed crystal ratio of Al
Growth of thick nitride-based compound semiconductors in thick films
The crystal grows easily and crystal growth is very difficult. However, when the superlattice layer is used, the superlattice layer
Is a layer having a somewhat higher Al mixed crystal ratio,
Cracks due to growth below the elastic critical thickness
Is difficult to enter. Therefore, a layer having a high mixed crystal ratio of Al
Optical growth and carrier confinement due to good growth
The confinement effect increases, and the threshold voltage for LD and the threshold voltage for LED
Vf (forward voltage) can be reduced. Further, the superlattice layer has a conductivity type of the superlattice layer.
Impurities that determine_uGa_1-uN
Doping with different n-type impurity concentrations between the GaN layer and the GaN layer
can do. For example, the n-type impurity concentration of one layer is
Small, preferably undoped (and
And doping the other to a high concentration, the threshold
Voltage, Vf, and the like can be reduced. This is an impurity
By having a low concentration layer in the superlattice layer,
Layer has high mobility and the impurity concentration is high.
The presence of a layer also allows the carrier concentration to remain high.
This is because a superlattice layer can be formed up to this. Low impurity concentration
High mobility layer and high impurity concentration carrier concentration
The presence of a large layer at the same time allows the carrier concentration
And a layer having high mobility is formed. So the threshold
It is assumed that the value voltage and Vf decrease. Nitride with large band gap energy
When the system compound semiconductor is highly doped with impurities,
High impurity concentration layer and low impurity concentration layer by modulation doping
Between the two-dimensional electron gas and the two-dimensional electron gas
It is assumed that the resistivity decreases due to the influence. For example, n
-Gap nitride doped with p-type impurities
-Based compound semiconductor and undoped with small band gap
In the superlattice layer in which the nitride-based compound semiconductor of
Heterojunction between the undoped layer and the doped layer
At the interface, the barrier layer side is depleted and the band gap is small.
Electrons (two-dimensional electron gas) accumulate at the interface before and after the thickness on the layer side
I do. This two-dimensional electron gas has a small band gap.
On the other side, so that when electrons travel, impurities
The electron mobility of the superlattice
The resistivity decreases. The p-side modulation dope is similarly
It is presumed to be due to the effect of the dimensional hole gas. In the case of p layer
In this case, AlGaN has a higher resistivity than GaN. There
To do more p-type impurities in AlGaN
Due to the lower resistivity, the actual resistance of the superlattice layer
When the light emitting device is manufactured, the threshold is low.
It is presumed that there is a tendency to fall. Also, the resistivity decreases
This makes it easier to obtain an ohmic contact with the electrode. Ma
In addition, the series resistance in the film also decreases, and the threshold voltage, Vf
A low light emitting element can be obtained. On the other hand, the band gap energy is small.
Highly doped impurities in nitride compound semiconductor layer
In such a case, the following effects are presumed. For example, A
l_uGa_1-uMg, which is a p-type impurity, is added to the N layer and the GaN layer.
When doped in an amount_uGa_1-uIn the N layer, Mg
The depth of the scepter level is large and the activation rate is small. one
On the other hand, the depth of the acceptor level of the GaN layer is Al_uGa_1-u
It is shallower than the N layer and has a higher Mg activation rate. For example, Mg
Is 1 × 10²⁰/cm^ThreeWhen doped, GaN is 1 × 10¹⁸
/cm^ThreeLevel of carrier concentration,_uG
a_1-u1 × 10 for N¹⁷/cm^ThreeOnly about carrier concentration
I can't. Then, Al_uGa_1-uSuperlattice with N / GaN
GaN layer with higher carrier concentration
Doping impurities. With this, a super carrier with a high carrier concentration
A child layer is obtained. Moreover, because of the superlattice structure,
Carrier is Al with low impurity concentration due to flannel effect_uGa_1-u
Move through the N layer. Therefore, the carrier is substantially Al_uG
a_1-uNot affected by N layer, Al_uGa_1-uN layer is band
It acts as a cladding layer with a high gap energy.
Nitride compounds with smaller bandgap energy
Even if the semiconductor layer is doped with a large amount of impurities,
It is very effective in lowering the threshold. This theory
Akira described an example of forming a superlattice on the P-type layer side.
However, the same applies to the case where a superlattice is formed on the n-layer side.
effective. Nitride with large band gap energy
When doping a large amount of n-type impurities into
Nitride compound semiconductors with large band gap energy
Is preferably 1 × 10¹⁷/cm^Three~ 1
× 10²⁰/cm^Three, More preferably 1 × 10¹⁸/cm^Three~ 5
× 10¹⁹/cm^ThreeRange. 1 × 10¹⁷/cm^ThreeLess than
Without it, the bandgap energy is reduced to nitride.
The difference from the compound semiconductor is reduced and the carrier concentration is increased.
Layer tends to be difficult to obtain. Also 1 × 10 ²⁰/cm^Three
If it is larger than this, the leakage current of the light emitting element itself increases,
There is a tendency. On the other hand, the band gap energy is small.
N-type impurity concentration of nitride-based compound semiconductors
Capping energy is higher than that of nitride-based compound semiconductors.
The smaller the better, the better, preferably 1/10 or less
Good. Most preferably undoped and most mobile
Although a layer with a high thickness can be obtained, the band gap is
Diffusion from nitride compound semiconductor side with large energy
It is considered that there is an n-type impurity that is coming. Therefore, n
The amount of mold impurities is 1 × 10¹⁹/cm^ThreeThe following is desirable. n-type
Periodic table of Si, Ge, Se, S, O, etc. as impurities
Group IVB and VIB elements can be selected. Better
Preferably, Si, Ge, and S can be n-type impurities.
You. This effect is due to the large band gap energy of nitrogen.
Doped n-type impurities into the compound semiconductor layer
Compound with small band gap energy
The same applies when the semiconductor layer is heavily doped with n-type impurities.
You. As described above, the superlattice layer is preferably doped with impurities.
Was mentioned, but the band gap energy
-Gap nitride-based compound semiconductor layer and band gap
Impurities with low energy nitride compound semiconductor layers
The concentrations can be equal. The above-described superlattice layer is formed on the p-side layer.
And the effect of the superlattice structure on the light emitting element is that the superlattice has n
Same as the function of the side layer, except that it is formed on the n-layer side.
The following effects are obtained in addition to the above. That is, p-type nitride-based
Compound semiconductors are more commonly used than n-type nitride-based compound semiconductors.
The normal resistivity is higher by two digits or more. Therefore, the superlattice layer is placed on the p-layer side.
By forming, the decrease of Vf is remarkably exhibited. The nitride-based compound semiconductor has a very large p-type crystal.
It is known that the semiconductor is difficult to obtain. p-type
Nitride-based compound doped with p-type impurities to obtain
The technology to remove hydrogen by annealing the conductor layer is known.
Have been. However, even though p-type was obtained, simply Annie
Just by ringing, the resistivity is several Ωcm or more
There are cases. Therefore, by making the p-type layer a superlattice layer,
The crystallinity is improved. As a result, the resistivity decreases by one digit or more.
Therefore, a decrease in Vf is likely to appear. The above-mentioned nitride compound semiconductor which is a superlattice layer
When the body layer is formed on the p-side layer, the band gap
High energy nitride compound semiconductor layer and bandgap
Between the nitride-based compound semiconductor layer having a small energy
Mold impurity concentration is different and one layer
In addition, the impurity concentration of the other layer is reduced. Superlattice
Similarly to the n-side layer, nitrogen having a large band gap energy is used.
The p-type impurity concentration in the nitride-based compound semiconductor layer
Compound with small band gap energy
Lower the p-type impurity concentration in the semiconductor layer, preferably
Lowering the threshold voltage, Vf, etc.
Can be. The reverse is also possible. In other words, the band gap
P-type impurities in high energy nitride-based compound semiconductor layers
Low material concentration and low bandgap energy
The concentration of p-type impurities in the nitride-based compound semiconductor layer
May be. The reason is as described above. In the case of forming a superlattice layer, p-type impurities are preferably used.
1 × 10¹⁸/cm ^Three~ 1 × 10^{twenty one}/ C
m^Three, More preferably 5 × 10¹⁸/cm^Three~ 5 × 10²⁰/ C
m^ThreeRange. 1 × 10¹⁸/cm^ThreeLess than the other
The difference from the nitride-based compound semiconductor layer of
It tends to be difficult to obtain a layer having a high rear concentration. Also,
1 × 10^{twenty one}/cm^ThreeIf more, the crystallinity tends to worsen
is there. On the other hand, nitrides with small bandgap energy
The p-type impurity concentration of the base compound semiconductor is
If the energy is less than that of the nitride-based compound semiconductor,
Good, preferably 1/10 or less. Most
Also preferably, when undoped, the layer having the highest mobility is
Can be obtained, but the band gap energy
P diffuses from the nitride-based compound semiconductor side
The amount of the p-type impurity is 1 × 10
²⁰/cm^ThreeThe following is desirable. Mg, Z as p-type impurities
Elements of Group IIA and IIB of the periodic table such as n, Ca, Be, etc. are preferred.
More preferably, it is Mg, Ca or the like. This effect
Is a nitride compound with a large band gap energy
The semiconductor layer is doped with a small amount of P-type impurities to form a bandgap.
P-type nitride-based compound semiconductor layer with low energy
The same applies to the case where many impurities are doped. Nitride-based compound semiconductor constituting superlattice
Means that the layer where impurities are highly doped is
High impurity concentration near the center of the semiconductor layer, near both ends
Impurity concentration is low (preferably undoped)
It is more desirable. Specifically, S as an n-type impurity
AlGaN doped with i and an undoped GaN layer
AlGaN doped with Si when superlattice layer is formed by
The electron into the conduction band as a donor.
Falls into the conduction band of low potential GaN. GaN
Since the crystal is not doped with donor impurities,
No scattering of carriers by objects. Therefore, electrons
It can easily move through the GaN crystal and has substantial electron transfer.
Mobility increases. This is the effect of the two-dimensional electron gas described above.
Is similar to that of
And the resistivity decreases. In addition, band gap energy
High n-type impurity in central region of AlGaN with large energy
The effect is further enhanced by doping to a concentration. That is, Ga
Some electrons moving in N are contained in AlGaN
N-type impurity ions (in this case, Si)
receive. However, both ends in the thickness direction of the AlGaN layer
Makes it less susceptible to Si scattering
And the mobility of the undoped GaN layer is further improved.
is there. The effect is slightly different, but the band gap
Nitride compound semiconductor with large energy and band gap
Superlattice with nitride-based compound semiconductor with low energy
Has a similar effect, the band gap
Central region of high energy nitride compound semiconductor
Doping with p-type impurities and reducing both ends
Or undoped. on the other hand,
Nitride compound semiconductor with small band gap energy
The layer in which the body is heavily doped with n-type impurities is
It is also possible to adopt a concentration configuration. In the case of a light-emitting element using an insulating substrate,
A part of the edge substrate is removed, or p
P-type semiconductor and n-type to obtain electrode surfaces for n-type and n-type
The exposed surface of the semiconductor is formed by etching etc.
Let Sputtering and vacuum deposition methods are applied on each semiconductor layer.
By using Au, Al or their alloys,
Each electrode is formed. The electrode provided on the light emitting surface side is fully covered
Patterning around the light emitting area without
Alternatively, use a transparent electrode such as a metal thin film or metal oxide.
Can be. In addition, p-type GaN and a preferable ohmic
The resulting electrode materials include Ni, Pt, Pd, Ni /
Au, Pt / Au, Pd / Au and the like are preferably mentioned.
it can. n-type GaN and a preferable ohmic
The pole material is Al, Ti, W, Cu, Zn, Sn, I
Metals or alloys such as n can be suitably cited.
You. The light emitting element thus formed is used as it is.
It can be divided into LED chips and LD elements
You may use it as a structure like a child. When used as an LED chip or LD element
In this case, the formed semiconductor wafer etc.
With a dicing saw where the blade with the cutting edge rotates
Make a full cut directly, or create a groove with a width
After cutting (half cut), the semiconductor
Crack Eher. Or, the diamond needle at the tip reciprocates
Extremely semiconductor wafer with linear scriber
Draw thin scribe lines (meridians) in a grid pattern, for example.
And then split the wafer by external force
And cut into chips. Gallium nitride
Light-emitting devices such as LED chips
Can be achieved. In the light emitting device of the present invention, the light source including
When emitting light color, the main emission wavelength of the light emitting element is efficiency
Is preferably 365 nm or more and 530 nm or less in consideration of
It is preferably from 365 nm to 490 nm. Red system only
Is emitted, 365 nm which is mainly in the ultraviolet region
It is more preferably at least 400 nm. In addition, for light emitting devices
Deterioration of the resin material used, supplementation with fluorescent substances such as white
When considering the color relationship, etc.
530 nm or less is preferred, and 420 nm or more and 490 n
m or less is more preferable. LED chips using visible light
To improve the efficiency of the phosphor and the fluorescent substance respectively
Is more preferably 430 nm or more and 475 nm or less.
When the present invention is used as a white light emitting device
FIG. 5 shows an example of the emission spectrum. Peak around 450 nm
The light emission with the light is the light emission from the LED chip,
Light emission with a peak near nm is excited by the LED chip.
The emitted light of the fluorescent substance. (The conductive wires 103, 203, 30
3) Conductive wires 103 and 20 as electrical connection members
LED chips 3 and 303 are light emitting elements, etc.
Of the light emitting elements 102, 202, 302
Good mechanical properties, mechanical connectivity, electrical conductivity and thermal conductivity
Is required. 0.01 cal / c as thermal conductivity
m^Two/ Cm / ° C or more, more preferably 0.5
cal / cm^Two/ Cm / ° C or more. In addition, workability
The diameter of the conductive wire is preferably Φ
10 μm or more and Φ45 μm or less. Such conductive
Concretely, gold, copper, platinum, aluminum
Conductive wires using metals such as aluminum and their alloys
Is mentioned. Such a conductive wire is connected to each LED
Tip electrodes, inner leads and mount leads
With wire bonding equipment
Can be connected. (Mount lead 105) Mount lead
The mode 105 is for disposing the light emitting element 102.
Large enough to be loaded with die bonding equipment, etc.
I just want it. In addition, multiple light-emitting elements are
In the case of using the diode as a common electrode of the light emitting element,
Is sufficient electrical conductivity and connection with bonding wire etc.
Continuity is required. In addition, the bracket on the mounting lead
The light emitting element is placed inside the lamp and the fluorescent material is filled inside.
If so, use another light-emitting diode
Can be prevented from false lighting by light from
You. Light emission using cup of mount lead
When reflecting ultraviolet light from the device, use
The use of silver as the surface material of the
It can be reflected efficiently. Light emitting device 102 and mount lead 105
Bonding with a thermosetting resin
Can be. Specifically, epoxy resin, acrylic resin,
Imide resin or SiO_TwoAnd the like. Flick
Face-down LED chips
Adhesive with the mounting leads and electrical connection.
Ag paste, carbon paste, ITO
A paste, a metal bump, or the like can be used. Further
In order to improve the light use efficiency of the light emitting diode, L
The surface of the mount lead on which the ED chip is placed is mirror-finished
The surface may have a reflection function. In this case
The surface roughness is preferably 0.1S or more and 0.8S or less. Ma
The specific electrical resistance of the mount lead is 30
0 μΩ · cm or less, more preferably 3 μΩ
-Cm or less. Also, multiple mounts on the mounting leads
When mounting light emitting elements, the amount of heat generated from the light emitting elements is large.
Therefore, good thermal conductivity is required. Specifically
Is 0.01 cal / cm^Two/ Cm / ° C or higher is preferred
More preferably 0.5 cal / cm^Two/ Cm / ℃ or more
is there. Materials that meet these requirements include iron, copper, and iron.
Copper, Copper with Tin, Ceramic with Metallized Pattern
And aluminum, copper and iron plated with gold, silver, etc.
I can do it. (Inner leads 106 and 306) In
Mount Reas 106 and 306
Connected to the light emitting elements 102 and 302 disposed on the
For electrical connection with the conductive wire 103
It is. Multiple light emitting elements are provided on the mount lead
In this case, arrange the conductive wires so that they do not touch each other.
It is necessary to have a configuration that can be used. More specifically,
As you move away from the cable,
To increase the area of the end face to be bonded
Therefore, the inner lead farther from the mount lead
To prevent the conductive wire from connecting to the
You. The roughness of the end face of the connection with the conductive wire takes into account the adhesion.
In consideration of this, it is preferably 1.6S or more and 10S or less. inner·
To form the tip of the lead into various shapes,
Predetermine the shape of the lead frame with the formwork and punch
May be formed or all inner leads may be shaped
After cutting, part of the upper part of the inner lead
Therefore, it may be formed. Furthermore, inner lead
After forming by punching, press
The desired end face area and end face height can be formed simultaneously.
Wear. The inner lead is a conductive wire.
Connectivity and electrical conductivity with bonding wires
Good things are required. The specific electric resistance is 3
00 μΩ · cm or less, more preferably 3 μΩ
-Cm or less. As a material that meets these conditions
Is made of iron, copper, copper with iron, copper with tin and copper, gold, silver.
Aluminum, iron, copper, etc. (Coating parts 101, 301) The present invention
The coating units 101 and 301 used for
Mount lead cup separately from the soldering member 104
And at least one of the light emission of the light emitting element.
Preferably, a fluorescent substance for converting a part is contained.
Specific materials for the coating part include epoxy resin,
Translucent tree with excellent weather resistance such as urea resin and silicone
Fat and TiO_Two, SiO_TwoTransparent inorganic members such as
Can be. Uses inorganic materials such as glass for the coating part
Can be formed at low temperature in consideration of the deterioration of the light emitting element
Are preferred. Also, a colored face together with the fluorescent substance of the present invention.
Additives, coloring dyes and diffusing agents. Coloring pigments
You can also adjust the color by using colored dyes
it can. In addition, by containing a diffusing agent,
The diagonal can be increased. No specific diffusing agent
Barium titanate, titanium oxide, aluminum oxide
Such as chromium, silicon oxide, and organic guanamine resin
Is preferably used. (Mold member 104) Mold member 10
Reference numeral 4 denotes a light emitting element 102 and a conductive
Electric wire 103, coating containing fluorescent substance
Can be provided to protect the
it can. Mold members are generally formed using resin.
Light emitting elements, if desired.
Does not cause adverse effects on 102 or conductive wire
It may be formed of a translucent inorganic member such as glass. Ma
Also, by incorporating a fluorescent substance into the coating part,
To increase the viewing angle of light emitted from the light-emitting element.
However, by incorporating a diffusing agent into the mold member,
To reduce the directivity from the light emitting element 102 to further increase the viewing angle.
Can be increased. Excited by visible light to emit light
In the case of fluorescent substances, the excitation wavelength is
Excluded reflected light is observed. The fluorescent material is colored
Looks like Specifically, it is excited by the blue light of the present invention.
The resulting fluorescent material appears to be colored yellow. Mo
Light emitting device by incorporating a diffusing agent
Body color of the fluorescent substance observed from the emission observation side of the
-The color can be made less noticeable. Further, it is possible to prevent color unevenness when non-
The strike can be improved. In addition, extraneous light
Prevents false lighting observations due to reduced irradiation
Also has the effect of causing. Same as coating material
Can also contain coloring pigments and coloring dyes
Wear. The mold member 104 is formed into a desired shape.
With this, the light emitted from the light emitting element 102 is focused or expanded.
A lens effect of scattering or the like can be provided. Obedience
Therefore, the mold member 104 may have a structure in which a plurality of layers are stacked.
No. Specifically, convex lens shape, concave lens shape
When viewed from the emission observation surface side,
It is a combined thing. With the specific material of the mold member 104
Are mainly made of epoxy resin, urea resin, silicone
Transparent resin and low melting point glass with excellent weather resistance
It is preferably used. In addition, as a diffusing agent, inorganic
Barium titanate, titanium oxide, aluminum oxide,
Silicon oxide or an organic guanamine resin is preferably used.
Can be In addition, if desired, in addition to the diffusing agent, mold
Fluorescent substances, fluorescent dyes, fluorescent pigments, etc.
It can also be done. Therefore, fluorescent materials etc.
Coating part etc.
May be used. In addition, the coating part
The resin containing the optical substance and the mold member are glass
Alternatively, they may be formed using different members. In this case, raw
Light emitting device with good productivity and less influence of moisture etc.
be able to. In addition, considering the refractive index,
It is possible to form the coating part using the same material
No. A can type light emitting die as shown in FIG.
When forming an ode, a low-melting glass, translucent
Au and Ag plated edge
Ar, N inside the package formed by_TwoEtc.
And can be hermetically sealed. (High Definition Full Color Light Emitting Device)
As shown in FIG.
A full-color light-emitting device. B (blue
System), G (green system) or GB (blue system and green system)
Etching and insulation on semiconductor wafer 401 capable of emitting light
Forming a plurality of separated light emitting elements via layers, etc.
You. In order to separate the light emitting elements, the light emitting elements are also RG.
Etch on semiconductor wafer to correspond to B
Resistance areas such as metal parts, oxides and nitrides, and vice versa
An isolation portion 402 such as a semiconductor region having a conductivity type is formed.
Optically and electrically between adjacent light emitting parts
Can also be separated. Thus, the separating unit 402
Will add a semiconductor process after semiconductor wafer formation
By doing so, it can be easily formed. Specifically, a high resistance region or a region of opposite conductivity type is used.
By forming the area into a desired shape such as an annular shape,
Control of the current flow to electrically isolate the light emitting part from the surroundings
Things. The buffer layer 404 and the first
Contact layer 405, first cladding layer 406, active
The region 407, the second cladding layer 408, and the second
The tact layers 309 are sequentially formed. Semiconductor wafer
To form a light emitting portion separated from the second
Having a conductivity type opposite to that of the second contact layer in the contact layer.
A separating portion 402 into which a punt is injected is formed. Light from the plurality of separated light emitting elements
And a fluorescent substance that is excited by each light emitting element.
The coating sections 410 and 411
Full-color high-definition light-emitting device that can emit RGB light
Can be formed. A half-color light emitting device of the present invention emits light of a single color.
The conductor wafer is provided with a buffer layer, a first contour on a substrate.
Layer, first cladding layer, first single quantum well or
An active layer such as a multiple quantum well structure, a second cladding layer,
First and second contacts having two contact layers in order
Use a semiconductor wafer with electrodes on each layer.
Can be. First and second contacts of a semiconductor wafer
By forming electrodes on each layer and supplying power,
To emit a single color. Further, the emission colors of blue and green are respectively
In order to make a semiconductor wafer capable of emitting light, many light emitting layers must be used.
It can have a layer configuration. Specifically, the electrodes are formed
An insulating layer on the monochromatic semiconductor wafer before
A third contact layer, a third cladding layer,
An active layer such as a single quantum well or multiple quantum well structure
A second active layer having a composition different from the first,
A cladding layer and a fourth contact layer are sequentially formed. Half
The first and second conductive wafers are passed through through holes and the like.
Electrodes are provided on the second, third and fourth contact layers, respectively.
Multi-color light emission is possible by using a broken semiconductor wafer
Semiconductor wafer. In this case, luminescence
Of the active layer closer to the light emitting part in consideration of the absorbed light
The bandgap is equal to the bandgap of the farther active layer.
It is made narrow. Further, even if the light emitting section is separated, the light emitting section
The light emitted from is emitted radially. So one
The light emitted from the light emitting part of the other light emitting part or other fluorescent material
Area, etc., and other light emitting parts are emitting light.
There is a case where a pseudo lighting phenomenon appears. this
This prevents false lighting that occurs between adjacent light emitting parts.
It is more preferable to provide the light shielding portion 413 in order to reduce
Good. The light shielding portion 413 is made of a dark colorant or silicon oxide.
Screen printing method for resin etc. with which reflective member mixed
And so on, on the surface of the semiconductor wafer, etc.
The light shielding portion 413 is formed in a desired shape surrounding the light emitting region.
Can be formed. Further, the fluorescent substance should not be directly applied on the light emitting element.
May be arranged at will, or a plurality containing fluorescent substances
Glass, plastic, crystal, etc. with individual regions of
A light-transmitting member such as
No. Furthermore, safah, which is a light-transmitting substrate on which a semiconductor is formed,
Multiple areas individually on ear substrate, spinel substrate, etc.
It can also be formed and used. Utilizing a semiconductor wafer capable of emitting blue light
In the case of a full-color light-emitting device, the fluorescent substance is
Emits green light excited by light from the light-emitting part
Excited by a fluorescent substance and light from another light emitting part
A fluorescent substance emitting red light used in the present invention;
Can be selected respectively. From the light emitting element 102
Since the light emitted as it emits blue light,
The blue region of the body wafer can transmit blue light as it is
It is configured to: Color converted by fluorescent material
Greens and / or reds are scattered by the fluorescent material.
Therefore, the viewing angle is wider than blue light. Therefore, RGB
A blue color is emitted to match the light emission characteristics of
Includes diffuser and / or colorant on surface to be illuminated
Things may be formed. In addition, fluorescent material is used for the light emitting part.
By making it slightly larger than the light emitting part used
The light is finally released from the upper surface of the transparent substrate on which the light substance is placed.
The emitted light should be emitted almost uniformly in each area.
Can also be. Furthermore, false lighting prevention and contrast can be achieved.
The light-shielding portion 413 is provided with a dark dye and / or
Preferably has a pigment. Use of the light emitting device of the present invention
The multi-color, high-definition light-emitting device used can be miniaturized and
Good heat dissipation. Also, the emission colors of RGB depend on the temperature.
A multicolor light-emitting device with extremely little gender shift
You. In such a light-emitting device, the diameter of each light-emitting portion is adjusted.
About 20 μm or less, between the centers of the light emitting parts
The spacing can also be less than about 45 μm. Therefore,
Forming a light-emitting device including about 10,000 light-emitting parts
You can also. The light-emitting device has a circuit in which a drive circuit and the like are formed.
It is electrically connected to the recon integrated circuit and can be driven integrally.
May be. This makes relatively inexpensive and high-definition LEDs
LED display with less color unevenness depending on the display device and viewing angle
It can be a device. (Display) The light emitting device of the present invention was used.
High color rendering LED table using light emitting device capable of emitting white light
It can be an indicator. That is, each of RGB emits light
LED display using only combinations of light emitting diodes
White display with higher definition than
You. Mix white light, etc. by combining each light emitting diode
In order to display, each light emitting diode of RGB
I have to emit light at the same time. Therefore red, green
One pixel compared to single color display for blue and blue
The display around is increased. Therefore, white display
In the case of, display with higher definition compared to RGB single color display
Cannot be shown. In addition, white display indicates each light emission
Temperature characteristics of each semiconductor to adjust and display diode
Various adjustments must be made in consideration of the characteristics and the like. further,
For those who visually recognize the LED display because it is a mixed color display
Depending on the direction and angle, the RGB light emitting diodes partially
In some cases, the display color is changed due to shading. Light emitting device capable of emitting white light using the present invention
By using the device in addition to the RGB light emitting diodes,
Therefore, higher definition can be achieved. In addition, white light emission
It can stabilize and eliminate color unevenness. In addition, RGB
Each LED emits light to increase brightness.
It can also be raised. Specifically, it is used in the present invention.
Cerium-activated yttrium aluminum in addition to fluorescent material
Light-emitting die mixed with phosphorous
A light-emitting diode that can emit white light
I let you. Place the LED chip and fluorescent material in the cup
By placing multiple light emitting diodes in close proximity
In some cases, the light from the other light-emitting diode
Preventing light substances from being excited and illuminated
Can be. In addition, light emission unevenness of the LED chip itself is
Emit more uniform light because it can be dispersed by quality
Light emitting diode. More
A light emitting device that can emit any white light with a strong reddish component
Can be [0115] Two or more such light emitting diodes of the present invention are used.
The upper LED display is electrically connected to the LED display.
LED display device having a driving circuit connected thereto
Can be configured. Specifically, a light emitting diode capable of emitting white light
As one of the display devices using Iodine, each source of RGB
One white light emitting diode in addition to the photodiode
And place them in any shape such as signs or matrices
A schematic configuration of the LED display will be described. LED display
The device is electrically connected to the driving circuit, such as the lighting circuit.
You. Various images are displayed according to the output pulse from the drive circuit.
It can be a display that can be shown. Drive circuit
To temporarily store input display data
RAM (Random, Access, Memory)
And each light emitting diode from the data stored in the RAM.
A floor for calculating a gradation signal for lighting at a predetermined brightness
Switching with the tone control circuit and the output signal of the tone control circuit
And a driver to light each LED
Prepare. The gradation control circuit determines whether the data stored in the RAM
Calculates the lighting time of the light emitting diode from the
Power. Here, when performing white display, the RGB
Shorten the pulse signal of the light emitting diode and lower the pulse height
Turn it off or not at all. On the other hand, compensate for it
Thus, the pulse signal is output to the white light emitting diode.
Thereby, the white component of the LED display is displayed. Therefore, a white light emitting diode is desired.
Gradation system that calculates pulse signals for lighting at different brightness
It is preferable to separately provide a CPU as a control circuit. tone
The pulse signal output from the control circuit is
Switch to driver when input to Aether driver
Cause When the driver is turned on, a white light emitting diode
Mode is turned on, and turned off when turned off. Further, another light emitting diode using the light emitting diode of the present invention is used.
3 shows an LED display. White light emission using the present invention
LED display for black and white using only possible light emitting diodes
Can also be placed. Specifically, activated by cerium
Yttrium aluminum garnet phosphor
And aMgO.bLi used in the present invention_TwoO ・ Sb_TwoO
_Three: CMn, dMgO.eTiO_Two: FMn, gMgO
hMgF_Two・ GeO_Two: At least selected from iMn
One that is mixed and contained in the coating material,
Light emitting diode using light emitting element capable of emitting color system
And The LED display for black and white is a light emitting device according to the present invention.
Arranged with only Iode 701 arranged in a matrix etc.
can do. Substitute for each drive circuit of RGB
LED driving circuit of the present invention capable of emitting white light
Only the LED display can be configured. L
ED displays are electrically connected to lighting circuits, which are driving circuits, etc.
Connect. Depending on the output pulse from the drive circuit, various
The display may be an image display.
The drive circuit temporarily stores input display data.
RAM to remember (Random, Access, Mem
ory) and the light emitting diode based on the data stored in the RAM.
Calculates the gradation signal for lighting the mode to the predetermined brightness
Control circuit and the output signal of the gradation control circuit.
The driver that is turned on and turns on the light emitting diode
And The gradation control circuit stores the data stored in the RAM.
Calculate the lighting time of the light emitting diode from the
Is output. Therefore, the LED display for black and white is RG
Unlike the full-color display of B, the circuit configuration is naturally simplified.
High definition can be achieved as well. Because of that, inexpensive RGB
Display without color unevenness due to light emitting diode characteristics
It can be a ray. Also, the traditional red
Compared to LED display using only color and green,
Less irritating and suitable for long-time use. (Surface Light Emitting Device) Using the light emitting device of the present invention
Thus, a planar light emitting device can be configured as shown in FIG. FIG. 8 shows a light emitting element and a light emitting element.
The joined light guide plate and at least one main surface of the light guide plate
And a color conversion unit provided in the surface light emitting device.
Therefore, at least the light emitting portion of the light emitting element is a gallium nitride compound.
Color conversion part is used in the present invention
A translucent member containing at least one fluorescent substance
You. In the case of such a planar light emitting device, the fluorescent substance is coated with a coating.
Contained in the light guide 808 and the scattering sheet 806 on the light guide plate.
Let Or on the scattering sheet 806 with the binder resin
It is formed into a sheet 801 by coating, etc., and the mold member is saved.
May be omitted. Specifically, the insulating layer and the conductive pattern
The LED chip is placed inside the U-shaped metal substrate 803 on which
The top 802 is fixed. LED chip and conductive pattern
After establishing electrical continuity with the
Substrate 803 on which LED chips 802 are mixed and agitated
Coating part 80 filled on top and containing fluorescent material
A light emitting diode having 8 is formed. Thus formed
The light emitting diode is placed at the end of the acrylic light guide plate 804.
The surface is fixed with epoxy resin or the like. One of the light guide plates 804
The main surface contains a white scattering agent to prevent color unevenness.
A reflective layer 807 in the form of a film is arranged. As well
The light-emitting diode is located on the entire back side of the light guide plate.
Reflective member 805 is also provided on the end face that is not provided to improve the luminous efficiency
Let me do it. As a result, it can be used as an LCD backlight
It can be used as a planar light source capable of obtaining sufficient brightness.
You. In particular, extraneous light is irradiated in addition to light from the light-emitting element.
Color unevenness and reduced brightness even under
The number of planar light emitting devices can be reduced. Further, in addition to the fluorescent substance used in the present invention,
Cerium-activated yttrium aluminum gane
Using a coating part mixed with
A planar light emitting device capable of emitting white light is configured. This surface
Use as a full-color liquid crystal display with an optical device
In this case, a light-transmitting conductive material (not shown) is provided on the main surface of the light guide plate 804.
Liquid with liquid crystal injected between glass substrates with patterns
By providing a polarizing plate arranged via a crystal device
Can be done. Hereinafter, examples of the present invention will be described.
As will be described, the present invention is limited to only specific examples.
Not to mention that it is not. [0123] 【Example】 (Example 1) As a light emitting device of the present invention,
LED chip and LED chip
Inner that is electrically connected using a loop and a conductive wire
-Lead and coating material filled in the cup
And coating members, LED chips, conductive wires
And at least the mount lead and the inner lead
A light-emitting diode having a mold member that partially covers the light-emitting diode
Formed. When the light emitting layer of the LED chip has at least
The active layer is In as a lithium-based compound semiconductor._0.05Ga_0.95
N and an LED chip with a main emission peak of 450 nm
Using. LED chips on a cleaned sapphire substrate
TMG (trimethyl gallium) gas and TMI (trim
Chill indium) gas, nitrogen gas and dopant gas
With the carrier gas, and the gallium nitride is deposited by MOCVD.
It was formed by depositing a film-based compound semiconductor.
SiH as dopant gas_FourAnd Cp_TwoSwitch between Mg and
It is formed by obtaining. Has n-type conductivity
Gallium nitride semiconductor contact layer and cladding layer
And a gallium nitride semiconductor having p-type conductivity.
An active layer of InGaN is formed between the pad layer and the contact layer.
To form a pn junction. (On sapphire substrate
Gallium nitride semiconductor at low temperature
Let me do it. Also, the p-type semiconductor is 400 ° C. or more after film formation.
Annealed. ) Each pn semiconductor by etching
After exposing the body surface, each electrode is
Each was formed. The semiconductor wafer thus completed
After drawing the scribe line,
An LED chip was formed as a light emitting element. At the tip of the silver-plated copper lead frame
Epoxy LED chip to mount lead with cup
Die bonding was performed with a xy resin. LED chip
The poles, mounting leads and inner leads
Wire bonding with gold wires to establish electrical continuity
Was. On the other hand, the fluorescent substance is MgCO_Three, Li_TwoCO
_Three, Sb_TwoO_Three, MnCO_Three5: 3:
1: Used in a molar ratio of 0.001 to 0.05. Each
These oxides are thoroughly mixed using a ball mill, etc.
Pack in a crucible or similar. Put the crucible in air at a temperature of 1300 ° C
Baking for about 2 hours in an oxygen atmosphere at 560 ° C for 10 hours.
After firing for a time, a fired product was obtained. Put the fired product in methanol
Mill, wash, separate, dry, and finally pass through sieve
Mg used for light_FiveLi₆Sb_TwoO₁₃: Shaped Mn phosphor
Was completed. The formed Mg_FiveLi₆Sb_TwoO₁₃: Mn firefly
Mix well 50 parts by weight of light substance and 100 parts by weight of epoxy resin.
It was a thriller. This thriller is LED chip
Into the cup on the mounted lead
Was. After the injection, the resin containing the fluorescent substance is cooled to 130 ° C for 1 hour.
Cured in between. Thus, a thickness of about 13 on the LED chip
As a translucent member containing 0 μm of the fluorescent substance of the present invention,
A coating part was formed. In addition, in the coating part
The fluorescent material gradually increases toward the LED chip
is there. After that, further apply an LED chip or fluorescent substance
Molded member for protection from force, moisture and dust
As a transparent epoxy resin. Mold member
Has a coating of fluorescent material in a shell-shaped formwork.
Insert the formed lead frame and apply translucent epoxy resin.
After the injection, it was cured at 150 ° C. for 5 hours. Thus formed
The light emitting diode is visible from the front of the light emission observation
The center part is yellowish due to the body color of the fluorescent material
Was colored. The magenta color system thus obtained can emit light.
When the chromaticity point of a light emitting diode is measured, the chromaticity point (x =
0.251, y = 0.0088). Also, the emission light
The rate was 7.4 lm / w. In addition, a weather test
At a temperature of 25 ° C. for 60 mA, a temperature of 25 ° C. for 20 mA,
In each test of 20 mA current conduction at a temperature of 60 ° C. and 90% RH
Even after 500 hours, the change due to the fluorescent substance
No conversion was observed. Comparative Example 1 The fluorescent substance was 5MgO.3Li
_TwoO ・ Sb_TwoO_FiveFrom red fluorescent dyes of perylene derivatives
Except that the shape of the light emitting diode was changed in the same manner as in Example 1.
And weathering tests. The formed light emitting diode
Immediately after energization, light emission of magenta color was convinced as in Example 1.
Was. In addition, in the weather resistance tests,
In some cases, the color tone changed and the output became zero. deterioration
As a result of analyzing the cause, the fluorescent substance was altered. Example 2 5MgO.3Li_TwoO ・ Sb_Two
O_Five: From 50 parts by weight to 20 parts by weight of Mn fluorescent material,
(Y)_0.6Gd_0.4)_ThreeAl_FiveO₁₂: Ce
Example except that 80 parts by weight of a fluorescent substance was added and mixed and stirred.
In the same manner as in Example 1, 100 light emitting diodes were formed. Note that (Y_0.6Gd_0.4)_ThreeAl_FiveO₁₂: Ce
The fluorescent material is composed of rare earth elements such as Y, Gd and Ce in stoichiometric ratio.
The solution dissolved in the acid was co-precipitated with oxalic acid. Bake this
Mixed with the coprecipitated oxide and aluminum oxide
To obtain a mixed raw material. Anfluoride as flux
Monium was mixed and packed in a crucible, and the temperature of 1400 ° C in air
The product was fired at a temperature for 3 hours to obtain a fired product. Put the baked product underwater
Mill, wash, separate, dry and finally pass through sieve
It has been done. The white light thus obtained can emit light.
The chromaticity point, color temperature and color rendering index of the diode were measured.
The chromaticity points (x = 0.296, y = 0.18, respectively)
3), color temperature 7090K, Ra (color rendering index) = 88.
5 is shown. The light emission rate was 9.7 lm / W.
Was. In the life test, the light emitting die
The test was performed on an average of 100 Aether. 5MgO ・ 3Li_TwoO ・
Sb_TwoO_Five: Same as Example 1 except that no Mn fluorescent substance was added
Color temperature and color rendering of light emitting diode
Chromaticity points (x = 0.302, y = 0.280),
Color temperature 8080K, Ra (color rendering index) = 87.5
Therefore, the light emitting diode of Example 2 is closer to the bulb color.
You can see that it has become. 100% luminous intensity before life test
After 500 hours, the average luminous intensity was examined. lifespan
It is 98.4% after the test, confirming that there is no difference in characteristics.
Came. (Embodiment 3) A light emitting diode of the present invention is shown in FIG.
Used for displays that are a kind of LED display like 7
did. Guanamine resin, a diffusing agent, is added to epoxy resin.
Except that a mold member containing about 0.1% by weight was used.
A light emitting diode was formed in the same manner as in Example 2. Departure
Glass epoxy tree with copper diode formed on photodiode
On a resin substrate in a 16 × 16 matrix
Was. Substrate and light emitting diode use automatic solder mounting equipment
And soldered. Then with phenolic resin
It was arranged inside the formed housing 704 and fixed. Shading part
The member 705 is formed integrally with the housing. Light-emitting diode
Except for the tip of the diode, the housing, light-emitting diode, substrate and shielding
Silico in which a part of the optical member is colored black by pigment
Rubber 706. Then, at room temperature, 72
Cure the silicone rubber in time to form an LED display
Was. This LED display and input display data
RAM (Random, Access,
Memory) and light emission from data stored in RAM
A gradation signal for lighting a diode to a predetermined brightness
And the output signal of the gradation control circuit.
Driver that turns on a light emitting diode when it is switched
And a CPU driving means provided with
Thus, an LED display device was configured. Drive the LED display
It was confirmed that the device could be driven as a monochrome LED display device. Example 4 The active layer was formed of In as a light emitting element.
_0.4Ga_0.6N semiconductor, main emission peak 460nm
LED chips were used. The LED chip is
TMG (trimethyl gallium) gas on the fire substrate,
TMI (trimethylindium) gas, nitrogen gas and
MOCVD by flowing the dopant gas together with the carrier gas
Gallium nitride based compound semiconductor
Formed. SiH as dopant gas_FourAnd Cp_TwoM
and g. n-type
Contact layer made of conductive gallium nitride semiconductor
And a gallium nitride semiconductor having p-type conductivity.
Between the contact layer and the contact layer._0.4Ga_0.6Activity of N
A layer was formed to form a pn junction. (In addition, sapphire
Gallium nitride semiconductor is formed on the substrate at low temperature
Layer. The active layer has a quantum effect.
Therefore, the thickness is about 3 nm. Furthermore, p-type semiconductor
Is annealed at 400 ° C. or higher after film formation. )
After exposing each pn semiconductor surface by switching,
Each of the electrodes was formed by turging. In this way
Draw a scribe line on the completed semiconductor wafer
After being divided by external force
Was formed. At the tip of the silver-plated copper lead frame
Epoxy LED chip to mount lead with cup
Die bonding was performed with a xy resin. LED chip
The poles, mounting leads and inner leads
Wire bonding with gold wires to establish electrical continuity
Was. On the other hand, the fluorescent substance is MgCO_Three, TiO_Two,
MnCO_ThreeRespectively as a raw material in a ratio of 2: 1: 0.001 to
Used at a molar ratio of 0.05. Baud each oxide
And thoroughly mixed using a mill, etc., and packed in an alumina crucible, etc.
You. The crucible is fired in air at 1350 ° C for about 2 hours
And baked at 560 ° C. for 10 hours in an oxygen atmosphere.
A product was obtained. Wash the calcined product by ball milling in methanol
Purified, separated, dried and finally passed through a sieve for use in the present invention
Mg_TwoTiO_Four: A Mn phosphor was formed. Also, (Y_0.6Gd_0.4)_ThreeAl_FiveO₁₂: Ce
Rare earth elements such as Y, Gd, and Ce
A solution dissolved in an acid at a stoichiometric ratio was coprecipitated with oxalic acid. this
Co-precipitated oxide obtained by firing and mixed with aluminum oxide
Combined to obtain a mixed raw material. Fluoride as flux
Mix ammonium and pack in crucible, 1400 ° in air
C. for 3 hours to obtain a baked product. Baked products underwater
Ball mill, wash, separate, dry and finally sieve
It is formed. Formed Mg_TwoTiO_Four: Mn fluorescent substance 2
5 parts by weight, (Y_0.6Gd_0.4)_ThreeAl_FiveO₁₂: Ce fluorescent material
60 parts by weight and 100 parts by weight of epoxy resin are mixed well
It was a thriller. LED chip is placed on this thriller
Into the cup on the mounted mount lead. note
After filling, the resin containing the fluorescent substance is hardened at 130 ° C. for 1 hour.
It was made. Thus, about 120μ of thickness on the LED chip
A coating containing the phosphor was formed. What
Contact, the coating part, fluorescent toward the LED chip
The substance is gradually increasing. After that, further LED chip
Protect the lamp and fluorescent material from external stress, moisture, dust, etc.
Of translucent epoxy resin as a mold member for the purpose of
I let it. The mold member contains a fluorescent material in a shell-shaped formwork.
Insert the lead frame with the coating of
After mixing translucent epoxy resin, cure at 150 ° C for 5 hours
I let it. The light emitting diode thus formed has a light emission
When viewed from the front, due to the fluorescent body color
The center was colored yellowish. The light-emitting diode thus obtained which can emit light
A light emitting diode capable of emitting white light as in Example 2 was used.
It was confirmed that it could be used as a password. (Example 5) The phosphor material was Mg._TwoTiO_Four:
3.5MgO.0.5MgF from Mn_Two・ GeO_Two: Mn
A light emitting diode was formed in the same manner as in Example 4 except that
Was completed. Light emitting die capable of emitting red light in the same manner as in Example 4.
It was confirmed that it could be used as an Aether. (Example 6) As a light emitting element, the active layer was In.
_0.01Ga_0.99N, the L of which main emission peak is 368 nm.
An ED chip was used. The LED chip is cleaned
TMG (trimethyl gallium) gas, T
MI (trimethyl indium) gas, nitrogen gas and gas
-Punt gas is flowed together with carrier gas, MOCVD method
Gallium nitride based compound semiconductor
Formed. SiH as dopant gas_FourAnd Cp_TwoMg
And by switching between them. Safa
Gallium nitride semiconductor formed at low temperature on an ear substrate
Buffer layer and gallium nitride semiconductor having n conductivity
Gallium nitride having n-type conductivity
Aluminum semiconductor clad layer and p-type conductivity
Gallium aluminum nitride semiconductor having cladding
InGa between the layer and the contact layer having p-type conductivity.
An N active layer was formed to form a pn junction. (Note that p
The type contact layer has a diffusion of Mg as an impurity on the active layer side.
Low impurity concentration on the p-type cladding layer to prevent
Gallium nitride layer and high impurity concentration nitriding in contact with electrodes
A gallium layer is provided. Also, turn on the active layer for 400
It is grown with a film thickness of gustrom. Has P-type conductivity
The semiconductor is annealed at 400 ° C. or higher after film formation.
You. ) Each semiconductor surface was exposed by etching.
Then, each electrode is formed by sputtering method.
Was. Scribing the completed semiconductor wafer
After drawing a line, split by external force
An LED chip was formed. At the tip of the silver-plated copper lead frame
Epoxy LED chip to mount lead with cup
Die bonding was performed with a xy resin. LED chip
The poles, mounting leads and inner leads
Wire bonding with gold wires to establish electrical continuity
Was. On the other hand, the fluorescent substance is MgCO_Three, GeO_Two,
MnCO_Three3.5: 0.5: 1:
It is used in a molar ratio of 0.001 to 0.05. each
Oxide is sufficiently mixed using a ball mill etc.
Fill in a pot. Crucible in air at 1200 ℃
Bake for 2 hours, and further at 560 ° C for 10 hours in an oxygen atmosphere
It was fired to obtain a fired product. Ball mill the fired product in water
Washing, separating, drying, finally passing through the sieve used in the present invention
3.5MgO.0.5MgF_Two・ GeO_Two: Mn phosphor
Was formed. 3.5MgO.0.5MgF_Two・ GeO_Two:
50 parts by weight of Mn phosphor in cup on mount lead
Was put inside. The fluorescent substance is made of TiO using the sol-gel method._Two
Trapped in layers. In this way, the fluorescent substance on the LED chip
A contained coating was formed. And then
LED chips and fluorescent materials to external stress, moisture and dust
Glass with insulation for each lead for protection from throat
Mount the lens in a metal frame N_TwoCantai purged with
A light emitting diode was formed. The light emitting diode thus obtained has a reddish color.
Was able to emit light. Further, as a weather resistance test, the temperature is
60mA current, temperature 25 ° C, 20mA current, temperature 60 ° C9
500 hours in each test with 20 mA current at 0% RH
Even after a lapse of time, changes due to the fluorescent substance are observed.
Did not. (Example 7) The phosphor substance was 3.5 MgO
0.5MgF_Two・ GeO_Two: Mn to Y (PV) O _Four: E
A light emitting diode was manufactured in the same manner as in Example 6 except that
Formed. A light emitting device capable of emitting red light as in the sixth embodiment.
It was confirmed that it could be used as an ion. (Embodiment 8) The phosphor material was 3.5 MgO
0.5MgF_Two・ GeO_Two: From Mn to YVO_Four: With Eu
A light emitting diode was formed in the same manner as in Example 6 except that
I let you. Light emitting diode capable of emitting red light in the same manner as in Example 6.
It was confirmed that it could be used as a password. (Example 9) A light emitting device was manufactured by the following steps.
Formed. Place sapphire substrate (C surface) in the reaction vessel
Cleaning at 1050 ° C in a hydrogen atmosphere
I do. Then, in a hydrogen atmosphere at 510 ° C, ammonia
And sapphire using TMG (trimethylgallium)
A low-temperature growth buffer layer made of GaN on the substrate is about 200
It is grown to a thickness of Å. Low temperature buffer layer
After growth, at 1050 ° C., using TMG and ammonia,
1 μm second buffer layer made of undoped GaN layer
It grows with the film thickness of. At 1050 ° C., TMG,
Monia and silane (SiH_Four) Using 1 × 10
¹⁸/cm^ThreeN-side contact made of doped n-type GaN
The layer is grown to a thickness of 2 μm. At 1050 ° C., TMG, TMA (trimethyl
Aluminum) Using ammonia and silane, the n-side
Undoped GaN layer, 50 Å
And 1 × 10 of Si¹⁸/cm^ThreeDoped Al_0.1Ga_0.9
Total film formed by alternately stacking N layers and 50 angstroms
Grown as a 300 Å thick superlattice structure
You. TMI, TM at 700 ° C. in a nitrogen atmosphere
G, ammonia, n-type impurity concentration is 5 × 10¹⁷/
cm^ThreeLess than non-doped In_0.05Ga_0.95More than N
An active layer having a thickness of 400 Å.
You. TMG, TM at 1050 ° C. in a hydrogen atmosphere
A, ammonia, Cp2Mg (cyclopentadienyl
Gnesium) and the p-side cladding layer is undoped G
aN layer of 50 Å and Mg of 1 × 10¹⁹/cm
^ThreeDoped Al_0.1Ga_0.9N layer 50 Å
And a total thickness of 600 angstroms
Is grown as a superlattice structure. Subsequently, TMG, ammonia, Cp2Mg
And Mg is 1 × 10²⁰/cm^ThreeConsists of doped GaN
A p-side contact layer is grown to a thickness of 0.12 μm. After the growth is completed, the wafer is removed in a nitrogen atmosphere.
Anneal at 700 ° C. in the reaction vessel, p
After lowering the mold layer further, remove the wafer from the reaction vessel.
Take it out and put it on the surface of the uppermost p-side contact layer
RIE (Reactive Ion Etching)
G) Perform etching from the p-side contact layer side with the device,
The surface of the n-side contact layer is exposed. After the etching, the p-side contact on the uppermost layer
Almost 200 angstrom of Ni
A translucent p-electrode containing Au and a bond on the p-electrode
0.2 μm film of p pad electrode made of Au
It is formed with a thickness. On the other hand, the n-type core exposed by etching
An n-electrode containing W and Al is formed on the surface of the contact layer.
You. Finally, to protect the surface of the p-electrode, SiO_TwoThan
After forming an insulating film, the wafer is scribed
The light emitting element is separated into 350 μm square light emitting elements. Forward voltage 2
At 0 mA, emission of about 378 nm was observed, and Vf
Indicates 3.3 V and the output is 5 mW. On the other hand, as a fluorescent substance, Y_TwoO_TwoS: Eu firefly
A light substance was formed. As a forming condition, Y_TwoO_ThreeAnd Eu_Two
O_ThreeIs dissolved in hydrochloric acid and coprecipitated as nitrate. At this time
Eu _TwoO_ThreeThe amount is 10 mol%. This precipitate
It is baked at 900 ° C. in air to form an oxide. The resulting acid
Mixed with sulfur, sodium carbonate and flux
Place in a crucible and bake at 1100 ° C for 2 hours.
Get a product. The baked product is pulverized, washed, separated and dried, and finally
Y used in the present invention through a sieve_TwoO_TwoS: Eu fluorescent material
Formed quality. The peak wavelength of this fluorescent substance is 627 n
m. The above light emitting element and Y_TwoO_TwoS: Eu fluorescent substance
Light emission was performed in the same manner as the light emitting device of Example 6 except that
The device was formed. This light emitting device is extremely bright red
A color could be emitted. (Embodiment 10)
1 × 10 Si¹⁸/cm^ThreeDope, thickness 500 Å
Trom In_0.05Ga_0.95Example except for N layer
When a light emitting device was manufactured in the same manner as in Example 9, Example 9 was used.
Similar light emission characteristics were shown. (Embodiment 11) In the ninth embodiment, the light emitting element
The element is the n-side cladding layer and the undoped Al_0.1Ga_0.9N layer
50 angstrom and 1 × 10 Si¹⁸/cm^ThreeDo
GaN layers alternately stacked with 50 Å
Superlattice structure with a total thickness of 300 Å
Then, the p-side cladding layer is undoped with Al._0.1Ga
_0.950 Å N layer and 1 × 10 Mg¹⁹/ C
m^ThreeAlternating with doped GaN layer 50 Å
Superlattice structure with a total film thickness of 600 angstroms
Structure. On the other hand, as a fluorescent substance, Y_TwoO_Three: Eu fluorescent material
Quality was used. The formation is Y_TwoO_ThreeAnd Eu_TwoO_ThreeTo
Boron is added as a mixture and dry mixed for 3 hours. Mixed raw
The material is fired in air at 1400 ° C for about 6 hours to obtain a fired product
You. Disperse the baked product by milling in a wet process, and wash it.
Used in the present invention through purification, dispersion, drying, dry sieve
Y_TwoO_Three: Eu fluorescent material was formed. This fluorescent material
The peak wavelength was 611 nm. The above light emitting element and Y_Two
O_Three: With the light emitting device of Example 9 except that Eu phosphor was used.
Then, a light emitting device was formed in the same manner. This light emitting device
It was possible to emit red light with extremely high luminance. (Example 12) As the light emitting element, the active layer was I
n_0.05Ga_0.95N having a main emission peak of 368 nm.
An LD element was used. A sapphire substrate has a low
A second buffer layer composed of a warm growth buffer layer and an undoped GaN layer;
A stripe width of 2 on the surface of the buffer layer and the second buffer layer;
SiO of 0 μm and stripe interval (window portion) of 5 μm_TwoThan
The protective film has a thickness of 0.1 μm, and the stripe is GaN.
(11-00) direction. Security
After the formation of the protective film, a GaN layer composed of undoped GaN is
A GaN substrate grown with a thickness of μm and having a surface of GaN
Let it form. 1 × 10 Si on GaN substrate¹⁸/cm^ThreeLess than
N-side contact layer made of top doped n-type GaN, S
i is 5 × 10¹⁸/cm^ThreeDoped In_0.1Ga_0.9From N
Anti-crack layer, then 1 × 10 Si¹⁹/cm^ThreeDo
N-type Al_0.2Ga_0.840 Angstroms of N layer
40 Angstroms and undoped GaN layer
The layers are grown alternately and
From a superlattice with a total film thickness of 0.8 μm laminated 100 layers at a time
An n-side cladding layer is grown. Undoped Al_0.05Ga_0.95N consisting of N
Side light guide layer, undoped In_0.01Ga_0.99Consisting of N
Active layer, Mg 1 × 10¹⁹/cm^ThreeDoped p-type Al_0.2
Ga _0.8N-side p-side cap layer, Al_0.01Ga_0.99N
Is formed. Next, Mg was added to 1 × 10¹⁹/cm^ThreeDoped
p-type Al_0.2Ga_0.8N layer, undoped GaN 40 on
Total thickness 0.8μm grown alternately with Gustrom
A p-side cladding layer having a superlattice structure is formed. Finally, on the p-side cladding layer, Mg was added
× 10²⁰/cm^ThreeP-side capacitor made of doped p-type GaN
A tact layer is formed. As described above, the nitride-based compound semiconductor
Anneal the grown wafer to remove p-type impurities
After further lowering the resistance of the doped layer, the p-side
Etching the contact layer and the p-side cladding layer,
The layer above the active layer has a stripe-shaped ridge shape.
And Next, the surface of the n-side contact layer is exposed.
To form an n-electrode made of Ti and Al in a stripe shape.
You. On the other hand, Ni and A are formed on the outermost surface of the ridge of the p-side contact layer.
A p-electrode made of u is formed in a stripe shape. Nitride exposed between p-electrode and n-electrode
SiO2 on the surface of the compound semiconductor_TwoForming insulating film
And a p-pad electrically connected to a p-electrode via an insulating film
Form electrodes. As described above, the n-electrode and the p-electrode are formed.
The resulting wafer is transferred to a polishing machine, and a nitride-based compound
Lapping the sapphire substrate on the side where no conductor is formed
Then, the thickness of the sapphire substrate is set to 70 μm. Wrapping
After polishing, 1μm polishing with finer abrasive
Mirror the surface and metallize the entire surface with Au / Sn
You. Thereafter, the Au / Sn side is scribed,
Cleave in a bar shape in the direction perpendicular to the striped electrode,
A resonator is formed on the open surface. SiO on the resonator surface_TwoAnd TiO_Two
To form a dielectric multilayer film consisting of
In the direction, the bar is cut into a laser chip. Then click
Face up (the board and heat sink are facing
State) and installed on a heat sink. The formed LD is
At room temperature, the threshold current density is 2.0 kA / cm^Two, Threshold voltage
At a voltage of 4.0 V, continuous oscillation with an oscillation wavelength of 368 nm was confirmed.
Was. An ultraviolet laser from such a light emitting element is
Y applied on screen with binder_TwoO_TwoS:
It was optically connected so that the Eu fluorescent material could be irradiated. S
The light from the light emitting element that emits ultraviolet light is
Is focused by a lens and projected. Focused ultraviolet
Screening by scanning light with a deflection mirror
Thus, a desired image can be obtained. Even in this case
High-luminance light can be emitted without deterioration of the fluorescent substance. [0172] According to the configuration of the present invention, a high output
Light emitting device of nitride-based compound semiconductor and aMgO.bLi
_TwoO ・ Sb_TwoO_Three: CMn, dMgO.eTiO_Two: FM
n, gMgO.hMgF_Two・ GeO_Two: IMn, jCaO
・ KM1O ・ TiO_Two: LPr, mM2_TwoO_Three・ (P_1-nV
_n)_TwoO_Five: OEu_TwoO_Three, M3_TwoO_TwoS: pEu, M4_TwoO:
at least one fluorescent substance selected from qEu.
Gallium nitride based compound
Efficiently emits relatively high-energy light emitted from semiconductors
High brightness and long time use while converting with fluorescent material
High light emission with minimal color unevenness and extremely low brightness reduction
An efficient light emitting device can be obtained. Also, the fluorescent material
Excited by short excitation wavelength, emits longer wavelength
You. Therefore, the light emitting device is proportional to the amount of light emitted from the light emitting element.
The light of the fluorescent substance is emitted from the device. The present invention relates to light emission on the long wavelength side in the visible light range.
A light emitting device containing components can also be provided. Further trust
In-vehicle features such as flexibility, power saving, miniaturization, and color temperature variability
And lighting as well as display in the aviation industry and general electrical equipment
Application can be opened. Also, white is long with human eyes
Light-emitting device that is less irritating and easier on the eyes when viewed for hours
It can be. In particular, claims 1 to 5 of the present invention.
High brightness and long-term use
Red component with very little color shift and low decrease in luminous efficiency
Various light emitting devices capable of emitting light having
You.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic sectional view of a light emitting diode which is a light emitting device of the present invention. FIG. 2 is a schematic sectional view of another light emitting device of the present invention. FIG. 3 is a schematic sectional view of another light emitting device of the present invention. FIG. 4 is a schematic sectional view of still another light emitting device of the present invention. FIG. 5 is a diagram showing an example of an emission spectrum of Example 1 which is a light emitting device of the present invention. FIG. 6A shows an example of an excitation spectrum of a fluorescent substance used in Example 1 of the present invention, and FIG. 6B shows an example of an excitation spectrum of the fluorescent substance used in Example 1 of the present invention. FIG. 3 is a diagram showing an example of an emission spectrum. FIG. 7 is a schematic diagram of an LED display device using the light emitting device of the present invention. FIG. 8 is a schematic sectional view of a planar light emitting device using the light emitting device of the present invention. FIG. 9 is a graph showing relative luminance with respect to a temperature change of a light-emitting element in which A emits red light using GaAsP as a light-emitting layer, and B shows a temperature change of a light-emitting element which emits green light having an InGaN light-emitting layer. , Where C is InG
The relative luminance with respect to a temperature change of a light emitting element capable of emitting blue light using aN as a light emitting layer is shown. [Description of Reference Numerals] 101, 301, 808 ... Coating portions 102, 202, 302, 802 containing fluorescent substance ... Light emitting elements 103, 203, 303 ... Conductive wires 104 ... Mold member 105, 305: Mount leads 106, 306: Inner leads 201: Mold member 204 containing a fluorescent substance ... Casing 205: Electrodes 304 provided on the casing A low-melting glass 307 to be a light-transmitting inorganic member; a package 308; a low-melting glass 401 as an insulating sealant; a semiconductor wafer 402; ..Buffer layer 405 first contact layer 406 first cladding layer 407 active layer 408 second cladding layer 409 2 contact layer 410: coating portion 411 containing a fluorescent material used in the present invention ... coating portion 413 containing another fluorescent material ... light shielding portion 414 ... sapphire substrate 421 ... An insulating layer 422 a transparent electrode 701 a light emitting diode 704 a housing 705 a light blocking member 706 a filler 803 a metal substrate 804 a light guide plate 805 Reflecting member 806 scattering sheet 807 reflecting layer

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 33/00

Claims (1)

(57) [Claims 1] N-type nitride-based compound semiconductor and p-type nitride-based
Double heterostructure between compound semiconductors
In each case, the n-type impurity concentration is 5 × 10 ¹⁷ / cm ³ or more.
Emitting layer with multiple quantum well structure with GaN layer
A light emitting element that emits ultraviolet light, a light-emitting device having a fluorescent material which emits fluorescence of at least part absorbs longer wavelength than the emission wavelength of the emission wavelength said light emitting element emits light, the light emitting element Is a lead frame with silver plated on the surface
The fluorescent substance is in contact with or in close proximity to the light emitting element.
And the p-type nitride-based compound semiconductor is provided with a band gap energy.
Layer with large energy and small band gap energy
A p-type impurity in a layer having a large band gap energy
The concentration is determined by the p of the low bandgap energy layer.
And the thickness of each layer is 100 ° or less, and the main peak of the emission spectrum from the light-emitting element is 365 °.
with less than nm or 400 nm, the fluorescent substance aMgO · bLi2O · Sb2O3: cMn, dMgO · eTiO2: fMn, jCaO · kM1O · TiO2: lPr, characterized in that at least one selected from
Light emitting device . However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.001 ≦ c ≦ 0.
05, 1 ≦ d ≦ 3, 1 ≦ e ≦ 2, 0.001 ≦ f ≦ 0.05, M1 is at least one selected from Zn, Mg, Sr, and Ba. j + k + 1 = 1, 0 <k ≦ 0.4, 0.00001 ≦ l
≦ 0.2.