JP3490367B2 - Spin valve thin film magnetic element, thin film magnetic head, floating magnetic head, and method of manufacturing spin valve thin film magnetic element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin-valve thin-film magnetic element, a thin-film magnetic head, a floating magnetic head, and a method of manufacturing a spin-valve thin-film magnetic element. The present invention relates to a spin-valve thin film magnetic element that can be manufactured.

[0002]

2. Description of the Related Art A magnetoresistive effect type magnetic head has an AMR (Anisotropi) which is provided with an element exhibiting an anisotropic magnetoresistive effect.
There is a c Magnetoresistive) head and a GMR (Giant Magnetoresistive) head provided with an element exhibiting a giant magnetoresistive effect. In the AMR head, the element exhibiting the magnetoresistive effect has a single layer structure made of a magnetic material. on the other hand,
The GMR head has a multilayer structure in which elements exhibiting a magnetoresistive effect are laminated with a plurality of materials. There are several types of structures that generate the giant magnetoresistive effect, but there is a spin-valve thin-film magnetic element that has a relatively simple structure and a high resistance change rate with respect to a weak external magnetic field. The spin valve thin film magnetic element includes a single spin valve thin film magnetic element and a dual spin valve thin film magnetic element.

FIG. 16 and FIG. 17 show schematic sectional views of a conventional spin valve thin film element. 16 is a schematic sectional view seen from the recording medium side, and FIG. 17 is a schematic sectional view seen from the track width direction. 16 and 17, the X1 direction in the figure is the track width direction of the spin-valve thin film magnetic element, the Y direction in the figure is the direction of the leakage magnetic field from the magnetic recording medium, and the Z direction in the figure is the direction of the magnetic recording medium. The direction of movement.

The spin-valve thin-film magnetic element 13 shown in FIGS. 16 and 17 has a non-magnetic conductive layer, a pinned magnetic layer and an antiferromagnetic layer laminated one on each side of the free magnetic layer in the thickness direction. It is a so-called dual spin valve type thin film magnetic element.

The spin valve thin film magnetic element 13 is
The underlayer 115 is laminated on the insulating layer 264, and the second antiferromagnetic layer 172 and the second pinned magnetic layer 1 are formed on the underlayer 115.
51, the second non-magnetic conductive layer 132, the free magnetic layer 141,
First non-magnetic conductive layer 131, first pinned magnetic layer 121, first
The antiferromagnetic layer 171 and the cap layer 114 are sequentially laminated. In addition, as shown in FIG. 16, a layered structure including the base layer 115 to the cap layer 114 is illustrated in FIG.
On both sides in the direction, the conductive layers 116, 116 and the intermediate layer 117,
117 and bias layer 118, 118 and bias base layer 1
19, 119 are formed.

The first and second pinned magnetic layers 121 and 151 are
It is magnetized by the exchange anisotropic magnetic field developed at the respective interfaces with the first and second antiferromagnetic layers 171 and 172,
These magnetization directions are fixed in the Y direction in the figure.

The free magnetic layer 141 is the bias layer 11
8, 118, and the magnetization direction thereof is opposite to the X1 direction in the drawing, that is, the first and second pinned magnetic layers 1
21 and 151 are aligned in the crossing direction of the magnetization directions.
By making the free magnetic layer 141 into a single magnetic domain, generation of Barkhausen noise is prevented.

In the spin-valve thin-film magnetic element 13, the conductive layers 116, 116 to the free magnetic layer 14 are used.
First, first and second non-magnetic conductive layers 131, 132 and first,
A detection current is applied to the second pinned magnetic layers 121 and 151,
When a leakage magnetic field from the magnetic recording medium traveling in the Z direction is applied to the free magnetic layer 141 along the Y direction in the figure, the magnetization direction of the free magnetic layer 141 is changed from the opposite direction of the X1 direction to the Y direction.
It fluctuates in the direction. Variation of the magnetization direction in the free magnetic layer 141 and the first and second pinned magnetic layers 121 and 151.
The electric resistance changes in relation to the magnetization direction of the magnetic field, and the leakage magnetic field from the magnetic recording medium is detected by the voltage change based on this resistance change.

[0009]

However, in the conventional spin-valve type thin film magnetic element 13, as shown in FIG. 18, the magnetization direction H of the free magnetic layer 141 is not applied to the external magnetic field from the recording medium. ₃ and 1st, 2nd
Ideally, the magnetization directions H ₁ and H ₂ of the pinned magnetic layers 121 and 151 are orthogonal to each other, but in reality, the first and second
Dipole magnetic field H ₄ leaked from the fixed magnetic layers 121 and 151,
H ₅ is applied to the free magnetic layer 141 from the direction opposite to the Y direction in the figure.
And the dipole magnetic fields H ₄ and H ₅ incline H ₃ to the opposite direction of the Y direction to H ₆ , so that the magnetization direction H ₆ of the free magnetic layer 141 and the first and second fixed magnetism. Layer 12
There is a problem that the magnetization directions H ₁ and H ₂ of Nos. ₁ and 151 cannot be made orthogonal to each other, and the asymmetry of the reproduced waveform, that is, asymmetry is increased.

The present invention has been made in view of the above circumstances, and prevents inclination of the magnetization direction of the free magnetic layer,
Spin valve thin film magnetic element capable of reducing asymmetry, thin film magnetic head including the spin valve thin film magnetic element, floating magnetic head including the thin film magnetic head, and spin valve thin film magnetic element It aims at providing the manufacturing method of.

[0011]

In order to achieve the above object, the present invention has the following constitutions. In the spin-valve thin-film magnetic element of the present invention, a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer are sequentially stacked on both sides of the free magnetic layer in the thickness direction, and the free magnetic layer and the pair of It comprises a non-magnetic conductive layer, a pair of conductive layers for applying a detection current to the pair of pinned magnetic layers, and a pair of bias layers for aligning the magnetization directions of the free magnetic layers. L is an integer of 1 or more) and a non-magnetic intermediate layer inserted between these ferromagnetic layers, and the magnetization directions of the adjacent ferromagnetic layers are opposite to each other. The whole is made to be in a ferrimagnetic state by being made parallel, and one of the pinned magnetic layers is 2M (where M is 1).
A ferromagnetic layer of at least the above integer) and a non-magnetic layer inserted between these ferromagnetic layers are laminated, and the magnetization directions of adjacent ferromagnetic layers are antiparallel. The whole is in a ferrimagnetic state, and the magnetization direction of the one fixed magnetic layer is fixed in the cross direction of the magnetization directions of the entire free magnetic layer by the exchange coupling magnetic field with the adjacent one antiferromagnetic layer. The other fixed magnetic layer is a single layer structure composed of a ferromagnetic layer, or a ferromagnetic layer of 2N + 1 (where N is an integer of 1 or more) or more and a non-magnetic layer inserted between these ferromagnetic layers. And a laminated structure in which the respective magnetization directions of the adjacent ferromagnetic layers are antiparallel to each other and the whole is in a ferrimagnetic state, and the other pinned magnetic layer If the magnetization direction is A ferromagnetic layer which is pinned in an antiparallel direction to the magnetization direction of the one pinned magnetic layer by an exchange coupling magnetic field with the antiferromagnetic layer and is closest to the free magnetic layer among the ferromagnetic layers forming the one pinned magnetic layer. The magnetization direction of the layer is antiparallel to the magnetization direction of the ferromagnetic layer closest to the free magnetic layer among the ferromagnetic layers forming the other fixed magnetic layer.

According to such a spin-valve thin-film magnetic element, one pinned magnetic layer is a 2 L ferromagnetic layer, that is, an even number of ferromagnetic layers, and the other pinned magnetic layer is 1 or 2N +.
One ferromagnetic layer, that is, an odd number of ferromagnetic layers, the magnetization directions of these pinned magnetic layers are made antiparallel, and at the same time, the most free magnetic layer among the ferromagnetic layers constituting each pinned magnetic layer. Since the magnetization direction of the ferromagnetic layer close to is close to the antiparallel direction, the magnetization direction of the free magnetic layer can be aligned with the direction perpendicular to the magnetization direction of the fixed magnetic layer. The magnetization direction of the free magnetic layer is normally aligned in one direction by the bias layer, but the magnetization direction may be tilted due to the magnetization of the pinned magnetic layers sandwiching the free magnetic layer, and the asymmetry may not be reduced. Therefore, according to the above spin-valve thin film magnetic element, the magnetization direction of the free magnetic layer is less likely to be affected by the magnetization of the pinned magnetic layer, and the asymmetry can be reduced.

The spin-valve thin-film magnetic element of the present invention is the spin-valve thin-film magnetic element described above, which is the closest to the free magnetic layer of the ferromagnetic layers constituting the one fixed magnetic layer. The direction of the magnetic field moment Hb1 of the ferromagnetic exchange coupling magnetic field generated by the ferromagnetic layer and the free magnetic layer coupling between the ferromagnetic layers, and the most free magnetic layer among the ferromagnetic layers forming the other fixed magnetic layer. The magnetic field moment Hb2 of the ferromagnetic exchange coupling magnetic field generated by the coupling between the ferromagnetic layers close to each other and the free magnetic layer.
Is parallel to the direction of the free magnetic layer.

According to the spin-valve type thin film magnetic element, the magnetic field of the ferromagnetic interlayer coupling magnetic field which is formed between the ferromagnetic layers constituting the one and the other fixed magnetic layers and close to the free magnetic layer. Since the directions of the moments Hb1 and Hb2 are antiparallel to each other in the free magnetic layer, the ferromagnetic interlayer coupling magnetic field is canceled out, and the magnetization direction of the free magnetic layer is not inclined by the ferromagnetic interlayer coupling magnetic field. It is possible to reduce the asymmetry of the spin-valve type thin film magnetic element by aligning the magnetization direction of the magnetic field with the direction perpendicular to the magnetization direction of the pinned magnetic layer.

The spin-valve thin-film magnetic element of the present invention is the spin-valve thin-film magnetic element described above, wherein the magnetic moment Hd1 of the dipole magnetic field of the one fixed magnetic layer and the other The direction of the magnetic moment Hd2 of the dipole magnetic field of the pinned magnetic layer is antiparallel to the free magnetic layer.

According to the spin-valve thin-film magnetic element, since the directions of the magnetic moments Hd1 and Hd2 of the dipole magnetic fields of the one and the other fixed magnetic layers are antiparallel in the free magnetic layer, the fixed magnetic layer has a fixed magnetic property. The dipole magnetic field is canceled by the layers, and the magnetization direction of the free magnetic layer is not tilted by this dipole magnetic field, and the magnetization direction of the free magnetic layer is aligned with the direction perpendicular to the magnetization direction of the pinned magnetic layer. It is possible to reduce the asymmetry of the device.

The spin-valve thin-film magnetic element of the present invention is the spin-valve thin-film magnetic element described above,
When the magnetic moment of the detection current magnetic field applied to the free magnetic layer by flowing the detection current through the pair of nonmagnetic conductive layers is Hs, Hb1 + Hb2 + Hd1 + Hd2 + Hs
It is characterized in that ≈0 holds.

According to the spin-valve type thin film magnetic element, the magnetic field moments Hb1 and Hb2 of the ferromagnetic interlayer coupling magnetic field and the dipole magnetic field magnetic moments Hd1 and Hd2 applied to the free magnetic layer and the magnetic moment Hs of the detected current magnetic field Hs. Is zero, the magnetization direction of the free magnetic layer is not inclined by these magnetic moments, and the asymmetry of the spin-valve thin film magnetic element can be zero.

In the spin-valve thin-film magnetic element of the present invention, it is preferable that L is 1, M is 1, and the other pinned magnetic layer has a ferromagnetic layer single layer structure. Further, in the spin-valve thin film magnetic element of the present invention, the L may be 1, the M may be 1, and the N may be 1. When the spin-valve thin film magnetic element is configured in this way, the free magnetic layer and the pinned magnetic layer are thinned, the diversion of the detection current is prevented, and the magnetoresistance change rate can be increased.

The spin-valve thin-film magnetic element of the present invention is the spin-valve thin-film magnetic element described above, wherein a detection current magnetic field applied to the one fixed magnetic layer when a detection current flows. And the magnetization direction of the one pinned magnetic layer are the same, and the direction of the detection current magnetic field applied to the other pinned magnetic layer and the magnetization direction of the other pinned magnetic layer are the same. And are in the same direction.

According to the spin-valve thin-film magnetic element, the direction of the detection current magnetic field generated by the detection current flowing in each nonmagnetic conductive layer is the same as the magnetization direction of each pinned magnetic layer. Is not canceled by the detected current magnetic field, the magnetization of the pinned magnetic layer can be firmly fixed, and the asymmetry of the spin-valve thin-film magnetic element can be reduced.

The thin film magnetic head of the present invention is a thin film magnetic head capable of reading magnetic information, comprising the spin valve thin film magnetic element according to any one of the above. The flying magnetic head of the present invention comprises a slider having the thin film magnetic head described above.

Since the thin-film magnetic head and the floating magnetic head are provided with the above spin-valve thin-film magnetic element having a small asymmetry, they are excellent in the symmetry of the reproduced waveform and reduce the frequency of errors during reproduction. It will be possible.

The method of manufacturing a spin-valve thin-film magnetic element according to the present invention comprises one antiferromagnetic layer, a ferromagnetic layer of 2M (where M is an integer of 1 or more) or more, and an insertion between these ferromagnetic layers. A fixed magnetic layer formed by laminating a non-magnetic layer, a non-magnetic conductive layer on one side, a ferromagnetic layer of 2 L (where L is an integer of 1 or more) or more, and between these ferromagnetic layers. A free magnetic layer formed by laminating a non-magnetic intermediate layer to be inserted,
A single layer structure consisting of the other non-magnetic conductive layer and the ferromagnetic layer only, or a ferromagnetic layer of 2N + 1 (where N is an integer of 1 or more) or more and a non-magnetic layer inserted between these ferromagnetic layers. All of the other pinned magnetic layer and the other pinned magnetic layer that are formed by stacking the other pinned magnetic layer and the other antiferromagnetic layer, each of which has a laminated structure of Between the one antiferromagnetic layer and the one pinned magnetic layer, and between the other antiferromagnetic layer and the other pinned magnetic layer by performing heat treatment while directing the magnetization directions of the ferromagnetic layers in the same direction. It is characterized in that an exchange coupling magnetic field is developed between them. The magnitude of the external magnetic field is 4.0.
It is preferably × 10 ⁵ A / m or more.

According to the method of manufacturing the spin-valve thin film magnetic element, the free magnetic layer, the pinned magnetic layer, the non-magnetic conductive layer and the antiferromagnetic layer having the above-mentioned structure are laminated to form the free magnetic layer and the pinned magnetic layer. The spin-valve thin-film magnetic element can be easily manufactured by only performing heat treatment while applying a magnetic field required for all the constituent ferromagnetic layers to have the same magnetization direction.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIG.
~ It demonstrates with reference to FIG. 1 to 15, the Z direction in the drawings is the moving direction of the magnetic recording medium, the Y direction in the drawings is the direction of the leakage magnetic field from the magnetic recording medium,
The X1 direction in the figure is the track width direction of the spin-valve thin film magnetic element.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
2 is a schematic cross-sectional view of the spin-valve thin-film magnetic element 11 as viewed from the magnetic recording medium side, and FIG. 2 is a schematic cross-sectional view of the spin-valve thin-film magnetic element 11 viewed from the track width direction. Further, FIG. 3 shows a levitation type magnetic head 150 provided with the thin film magnetic head 1 including the spin valve type thin film magnetic element 11, and FIG. 4 shows a sectional view of a main part of the thin film magnetic head 1.

The flying magnetic head 150 according to the present invention shown in FIG. 3 has a slider 151 and an end surface 1 of the slider 151.
The thin film magnetic head 1 and the inductive head h according to the present invention provided in 51d are mainly configured.
Reference numeral 155 indicates a leading side which is an upstream side of the slider 151 in the moving direction of the magnetic recording medium, and reference numeral 156.
Indicates the trailing side. Rails 151a, 151a, 151 are provided on the medium facing surface 152 of the slider 151.
b is formed, and the air groove 15 is provided between the rails.
1c and 151c.

Further, as shown in FIG. 4, the thin film magnetic head 1 according to the present invention is laminated on the insulating layer 162 formed on the end surface 151d of the slider 151, and the insulating layer 162 is formed.
The lower shield layer 163 laminated on the lower shield layer 163, the lower insulating layer 164 laminated on the lower shield layer 163, and the spin valve thin film according to the present invention formed on the lower insulating layer 164 and exposed on the medium facing surface 152. A magnetic element 11, an upper insulating layer 166 covering the spin-valve thin film magnetic element 11, and
The upper shield layer 167 covers the upper insulating layer 166. That is, the thin film magnetic head 1 of the present invention is configured by laminating the upper and lower insulating layers 166 and 164 and the upper and lower shield layers 167 and 163 on both sides of the spin valve thin film magnetic element 11 in the thickness direction. There is. The upper shield layer 167 is also used as the lower core layer of the inductive head h described later.

The inductive head h has a lower core layer (upper shield layer) 167, a gap layer 174 laminated on the lower core layer 167, a coil 176, and a coil 1.
It is composed of an upper insulating layer 177 covering 76 and an upper core layer 178 bonded to the gap layer 174 and bonded to the lower core layer 167 on the coil 176 side. The coil 176 is patterned to have a spiral shape in a plane. Further, the base end portion 178b of the upper core layer 178 is magnetically connected to the lower core layer 167 at substantially the center of the coil 176. In addition, the upper core layer 178 includes
A core protective layer 179 made of alumina or the like is laminated.

As shown in FIGS. 1 and 2, the spin-valve thin-film magnetic element 11 of the present invention has a non-magnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer on both sides in the thickness direction of the free magnetic layer. Is a so-called dual spin-valve type thin film magnetic element in which one layer is laminated. This dual spin-valve thin film magnetic element has three combinations of free magnetic layer / non-magnetic conductive layer / fixed magnetic layer, so that there are three combinations of free magnetic layer / non-magnetic conductive layer / fixed magnetic layer. As compared with a single spin valve thin film magnetic element in which one combination is used, a large resistance change rate can be expected and high density recording can be supported.

In FIG. 1, reference numeral 164 indicates a lower insulating layer formed of Al ₂ O ₃ or the like, and reference numeral 15 indicates a base layer made of Ta (tantalum) or the like laminated on the lower insulating layer 164. The second antiferromagnetic layer 72, the second pinned magnetic layer 51, and the second nonmagnetic conductive layer 3 are formed on the underlayer 15.
2, the free magnetic layer 41, the first nonmagnetic conductive layer 31, the first pinned magnetic layer 21, the first antiferromagnetic layer 71, and the cap layer 14 formed of Ta or the like are sequentially stacked. In this manner, the layers from the base layer 15 to the cap layer 14 are sequentially laminated to form a laminated body 11A having a substantially trapezoidal cross-section having a width corresponding to the track width.

The illustrated X ₁ direction on both sides of the laminate 11A, i.e. on both sides in the track width direction is for example, a Co-Pt (cobalt -
A pair of bias layers 18 made of a platinum alloy are formed. The bias layers 18 and 18 are the lower insulating layer 16
4 is formed so as to ride on both side surfaces of the laminated body 11A from above. The bias layers 18 and 18 align the magnetization direction of the free magnetic layer 41 to reduce Barkhausen noise of the free magnetic layer 41. Further, the conductive layers denoted by reference numerals 16 and 16 are stacked above the bias layers 18 and 18. The conductive layers 16 and 16 are mainly composed of the free magnetic layer 4.
First, first and second non-magnetic conductive layers 31, 32 and first, second
A detection current is applied to the fixed magnetic layers 21 and 51.

Between the bias layer 18 and the lower insulating layer 164, and between the bias layer 18 and the laminated body 11A,
For example, the bias underlayer 1 made of nonmagnetic metal Cr
9 is provided. The crystal structure is a body-centered cubic structure (bcc
By forming the bias layer 18 on the bias underlayer 19 made of Cr (structure), the coercive force and the squareness ratio of the bias layer 18 are increased, and the bias magnetic field required for making the free magnetic layer 41 into a single magnetic domain is increased. Can be made.

Further, an intermediate layer 17 made of, for example, a nonmagnetic metal Ta or Cr is provided between the bias layer 18 and the conductive layer 16. Cr as the conductive layer 16
In the case of using, the provision of the Ta intermediate layer 17 functions as a diffusion barrier against a thermal process such as resist curing in a later step, and can prevent deterioration of the magnetic characteristics of the bias layer 18. Further, Ta is used as the conductive layer 16.
In the case of using, the provision of the Cr intermediate layer 17 has the effect of facilitating the Ta crystal deposited on Cr to have a body-centered cubic structure with a lower resistance.

The first and second antiferromagnetic layers 71 and 72 are made of Pt.
It is preferably formed of a Mn alloy. The PtMn alloy is NiM which has been used as an antiferromagnetic layer from the past.
Compared with n alloys and FeMn alloys, the corrosion resistance is excellent, the blocking temperature is high, and the exchange coupling magnetic field is large. Further, the first and second antiferromagnetic layers 71 and 72 are X-Mn (where X represents one element selected from Pt, Pd, Ru, Ir, Rh, and Os). Alloy represented by the formula or X'-Pt-Mn (where X'is P
d, Cr, Ni, Ru, Ir, Rh, Os, Au, Ag
One or more elements selected from the above are shown. ) May be formed of an alloy represented by the formula.

In the PtMn alloy and the alloy represented by the formula X-Mn, Pt or X is 37 to 63.
It is preferably in the atomic% range. More preferably,
It is in the range of 44 to 57 atom%. Furthermore, X'-P
In the alloy represented by the formula of t-Mn, X '+ Pt is 3
It is preferably in the range of 7 to 63 atom%. More preferably, it is in the range of 44 to 57 atom%.

The first and second antiferromagnetic layers 71 and 72 are made of an alloy having an appropriate composition range described above, and are heat-treated in a magnetic field to generate a large exchange coupling magnetic field.
The second antiferromagnetic layers 71 and 72 can be obtained. Particularly, in the case of PtMn alloy, it has an exchange coupling magnetic field exceeding 6.4 × 10 ⁴ A / m, and the blocking temperature for losing the exchange coupling magnetic field is 653K (380 ° C.), which is extremely high. The ferromagnetic layers 71 and 72 can be obtained.

As shown in FIGS. 1 and 2, the free magnetic layer 41 includes a first ferromagnetic free layer (ferromagnetic layer) 42 and a second ferromagnetic free layer (ferromagnetic layer) 43. The non-magnetic intermediate layer 44 inserted between the two ferromagnetic free layers 42 and 43 is laminated.

The first and second ferromagnetic free layers 42 and 43 are made of N
The non-magnetic intermediate layer 44 is preferably made of an iFe alloy.
Is preferably formed of a non-magnetic material made of one of Ru, Rh, Ir, Cr, Re and Cu, or an alloy thereof, and particularly preferably made of Ru. The thickness t _f1 of the first ferromagnetic free layer 42 is 1 to 4
The range of nm is preferable, and the thickness t of the second ferromagnetic free layer 43 is t.
_f2 is preferably in the range of 1 to 4 nm. The thickness of the nonmagnetic intermediate layer 44 is preferably in the range of 0.3 to 1.2 nm.

The magnetization direction of the first ferromagnetic free layer 42 is aligned in the X1 direction in the figure by the bias magnetic field from the bias layers 18 and 18, and the second ferromagnetic free layer 43 is anti-strong with the first ferromagnetic free layer 42. Magnetically coupled and the magnetization direction is shown in the figure X
Aligned in the opposite direction of 1 direction. Therefore, the free magnetic layer 4
1, the magnetization directions of the first ferromagnetic free layer 42 and the second ferromagnetic free layer 43 which are adjacent to each other via the non-magnetic intermediate layer 44 are antiparallel to each other, and The magnetic free layer 43 is antiferromagnetically coupled.

Further, in order to bring the free magnetic layer 41 into the ferrimagnetic state, it is preferable that the magnitudes of the magnetic moments caused by the magnetizations of the first and second ferromagnetic free layers 42 and 43 are made slightly different. For example, when the first and second ferromagnetic free layers 42 and 43 are made of the same material, it is preferable to make t _f1 and t _f2 slightly different. In this embodiment, t
_f1 > _tf2 . In addition, the first and second ferromagnetic free layers 4
When 2 and 43 are made of different materials, the saturation magnetizations of the first ferromagnetic free layer 42 and the second ferromagnetic free layer 43 are set to M _f1 and M _f2 , respectively. The magnetic film thicknesses of the magnetic free layer 43 are set to M _f1 · t _f1 and M _f2 , respectively.
When t _f2 is set, M _f1 · t _f1 and M _f2 · t _f2 may be slightly different.

Since the magnetization directions of the first and second ferromagnetic free layers 42 and 43 are antiparallel to each other, the magnetic moments of the first and second ferromagnetic free layers 42 and 43 cancel each other. Since the free magnetic layer 41 is configured to satisfy t _f1 > t _f2 , the magnetization (magnetic moment) of the first ferromagnetic free layer 42 slightly remains, and the magnetization direction of the entire free magnetic layer 41 is indicated by X in the figure. Aligned in _one direction.

As described above, in the free magnetic layer 41, the first ferromagnetic free layer 42 and the second ferromagnetic free layer 43 are antiferromagnetically coupled, and the magnetization of the first ferromagnetic free layer 42 remains. The artificial ferrimagnetic state (synthetic ferri fr
ee; Synthetic ferry free). In this way, the free magnetic layer 41 in the ferrimagnetic state can be rotated by a minute external magnetic field so that its magnetization direction matches the direction of the external magnetic field.

The free magnetic layer 4 shown in FIGS. 1 and 2 is used.
1 denotes two ferromagnetic layers (first and second ferromagnetic free layers 42, 4
3), but not limited to this, 2L
It may be composed of an even number of ferromagnetic layers (where L is an integer of 1 or more) or more. In this case, nonmagnetic intermediate layers are inserted between these ferromagnetic layers, and the magnetization directions of the adjacent ferromagnetic layers are made antiparallel to each other so that the whole is in a ferrimagnetic state. It is preferable. In order to prevent the detection current from being shunted, it is preferable to set L = 1 as in the present embodiment.

The first and second non-magnetic conductive layers 31 and 32 are layers that reduce the magnetic coupling between the free magnetic layer 41 and the first and second pinned magnetic layers 21 and 51 and mainly flow a detection current. And is preferably formed of a non-magnetic material having conductivity represented by Cu, Cr, Au, Ag and the like, and particularly preferably formed of Cu.

The first pinned magnetic layer 21 includes a first ferromagnetic pinned layer (ferromagnetic layer) 22 and a second ferromagnetic pinned layer (ferromagnetic layer) 23, and first and second ferromagnetic pinned layers 22 and 23. And a first non-magnetic layer (non-magnetic layer) 24 inserted between the two. The first ferromagnetic pinned layer 22 is the first
The second ferromagnetic pinned layer 23 is provided closer to the first antiferromagnetic layer 71 than the nonmagnetic layer 24 and is in contact with the first antiferromagnetic layer 71.
It is provided closer to the first nonmagnetic conductive layer 31 than the first nonmagnetic layer 24 and is in contact with the first nonmagnetic conductive layer 31.

The first and second ferromagnetic pinned layers 22 and 23 are
It is formed of NiFe alloy, Co, CoNiFe alloy, CoFe alloy, CoNi alloy, or the like, and particularly preferably formed of Co. Also, the first and second
The ferromagnetic pinned layers 22 and 23 are preferably made of the same material. The first nonmagnetic layer 24 is made of Ru, Rh,
It is preferably made of one of Ir, Cr, Re and Cu or an alloy thereof, and particularly preferably made of Ru. The thickness t _p1 of the first ferromagnetic pinned layer 22 is preferably in the range of 1 to 3 nm, and the second ferromagnetic pinned layer 23
The film thickness t _{p2 of} is preferably in the range of 1 to 3 nm. Also, the first
The thickness of the nonmagnetic layer 24 is preferably in the range of 0.3 to 1.2 nm.

The magnetization direction of the first ferromagnetic pinned layer 22 is fixed in the Y direction shown by the exchange coupling magnetic field with the first antiferromagnetic layer 71, and the second ferromagnetic pinned layer 23 is the first ferromagnetic pinned layer. 22 is antiferromagnetically coupled and its magnetization direction is Y in the figure.
It is fixed in the opposite direction. Therefore, in the first pinned magnetic layer 21, the magnetization directions of the first ferromagnetic pinned layer 22 and the second ferromagnetic pinned layer 23, which are adjacent to each other via the first nonmagnetic layer 24, are antiparallel, and the first ferromagnetic layer 21 The pinned layer 22 and the second ferromagnetic pinned layer 23 are antiferromagnetically coupled.

Further, in order to bring the first pinned magnetic layer 21 into a ferrimagnetic state, the first and second ferromagnetic pinned layers 22 and 23 are formed.
It is preferable that the magnitudes of the magnetic moments due to the magnetization of are slightly different. To make the magnitudes of the magnetic moments different, for example, the first and second ferromagnetic pinned layers 22 and 2 are used.
If 3 is made of the same material, t _p1 and t _p2 should be slightly different. In this embodiment, t _p2 > t _p1 . When the first and second ferromagnetic pinned layers 22 and 23 are made of different materials, the saturation magnetizations of the first ferromagnetic pinned layer 22 and the second ferromagnetic pinned layer 23 are M _p1 and M _p1 , respectively.
_p2 and the magnetic film thicknesses of the first ferromagnetic pinned layer 22 and the second ferromagnetic pinned layer 23 are M _p1 · t _p1 and M _p2 · t _{p2, respectively.}
Then, it is _preferable that M _p1 · t _p1 and M _p2 · t _p2 be slightly different.

Since the magnetization directions of the first and second ferromagnetic pinned layers 22 and 23 are antiparallel to each other, the magnetic moments of the first and second ferromagnetic pinned layers 22 and 23 have a relationship of canceling each other. However, the first pinned magnetic layer 21 has t _p2 > t
Since it is configured to have _p1 , the magnetization (magnetic moment) of the second ferromagnetic pinned layer 23 slightly remains. This residual magnetization is further amplified by the exchange coupling magnetic field with the first antiferromagnetic layer 71, the magnetization direction of the entire first pinned magnetic layer 21 is pinned in the direction opposite to the Y direction in the drawing, and the magnetization direction of the free magnetic layer 41 is fixed. It becomes a relationship that crosses over.

As described above, in the first pinned magnetic layer 21, the first ferromagnetic pinned layer 22 and the second ferromagnetic pinned layer 23 are antiferromagnetically coupled, and the magnetization of the second ferromagnetic pinned layer 23 is Since it remains, the artificial ferrimagnetic state (synthetic
ferri pinned; Synthetic ferri pinned).

The first pinned magnetic layer 21 is composed of two ferromagnetic layers (first and second ferromagnetic pinned layers 22 and 23), but the present invention is not limited to this, and 2M (M is 1 or more). It may be composed of an even number of ferromagnetic layers equal to or more than the integer). In this case, the non-magnetic layers are respectively inserted between these ferromagnetic layers, and the magnetization directions of the adjacent ferromagnetic layers are antiparallel to each other so that the whole is in a ferrimagnetic state. Is preferred. In order to prevent the shunting of the detection current, it is preferable to set M = 1.

The second pinned magnetic layer 51 includes a third ferromagnetic pinned layer (ferromagnetic layer) 52 and a fourth ferromagnetic pinned layer (ferromagnetic layer).
53 and a fifth ferromagnetic pinned layer (ferromagnetic layer) 54, a second non-magnetic layer (non-magnetic layer) 55 inserted between the third and fourth ferromagnetic pinned layers 52 and 53, a fourth A third nonmagnetic layer (nonmagnetic layer) 56 inserted between the fifth ferromagnetic pinned layers 53 and 54 is laminated. The third ferromagnetic pinned layer 52 is provided closer to the second nonmagnetic conductive layer 32 than the fourth ferromagnetic pinned layer 53 and is in contact with the second nonmagnetic conductive layer 32, and the fifth ferromagnetic pinned layer 54 is the fourth ferromagnetic pinned layer 54. Ferromagnetic pinned layer 5
It is provided closer to the second antiferromagnetic layer 72 than 3 and is in contact with the second antiferromagnetic layer 72.

The first, second and third ferromagnetic pinned layers 52, 5
3, 54 are NiFe alloy, Co, CoNiFe alloy,
It is formed of a CoFe alloy, a CoNi alloy, or the like, and is preferably formed of Co. Also,
The first, second and third ferromagnetic pinned layers 52, 53 and 54 are preferably made of the same material. The first and second
The nonmagnetic layers 55, 56 are made of Ru, Rh, Ir, Cr, R.
e, Cu, or one of these alloys is preferable, and Ru is particularly preferable. The thickness t _p3 of the third ferromagnetic pinned layer 52 is preferably in the range of 1 to ₃ nm, the thickness t _p4 of the fourth ferromagnetic pinned layer 53 is preferably in the range of 1 to ₃ nm, and the fifth ferromagnetic pinned layer 54.
The film thickness t _{p5 of} is preferably in the range of 1 to 3 nm. Also, the second
The thickness of the nonmagnetic layer 55 is preferably in the range of 0.3 to 1.2 nm, and the thickness of the third nonmagnetic layer 55 is preferably in the range of 0.3 to 1.2 nm.

The magnetization direction of the fifth ferromagnetic pinned layer 54 is fixed in the Y direction shown by the exchange coupling magnetic field with the second antiferromagnetic layer 72, and the fourth ferromagnetic pinned layer 53 is the fifth ferromagnetic pinned layer. 54 is antiferromagnetically coupled and its magnetization direction is Y in the figure.
Fixed in the opposite direction to the third ferromagnetic pinned layer 52
Is antiferromagnetically coupled to the fourth ferromagnetic pinned layer 53 and its magnetization direction is fixed in the Y direction in the figure. Therefore the second
The pinned magnetic layer 51 has magnetization directions of the third ferromagnetic pinned layer 52, the fourth ferromagnetic pinned layer 53, and the fifth ferromagnetic pinned layer 54 which are adjacent to each other via the first and second nonmagnetic layers 55 and 56. Are antiparallel to each other, and these ferromagnetic pinned layers 5
2, 53 and 54 are antiferromagnetically coupled.

Further, in order to bring the second pinned magnetic layer 51 into the ferrimagnetic state, the magnitude of the combined magnetic moment of the third and fifth ferromagnetic pinned layers 52 and 54 whose magnetization directions are the same direction (Y direction in the drawing). And the magnetization direction is the opposite direction (Y in the figure).
It is preferable that the magnitude of the magnetic moment of the fourth ferromagnetic pinned layer 53, which is the opposite direction (direction), be slightly different. To make the magnitude of magnetic moment different,
For example, the third, fourth and fifth ferromagnetic pinned layers 52, 53 and 5
When 4 are made of the same material, it is preferable that (t _p3 + t _p5 ) and t _p4 be slightly different. In this embodiment, t _p4 > t
_{It is} assumed that _p3 > t _p5 and (t _p3 + t _p5 )> t _p4 . In addition, the third, fourth and fifth ferromagnetic pinned layers 52, 53 and 54
Are made of different materials, the saturation magnetizations of the third, fourth, and fifth ferromagnetic pinned layers 52, 53, and 54 are M _p3 , M _p4 , and M _p5 , respectively. The magnetic film thickness of each of the magnetic pinned layers 52, 53, 54 is M _p3 · t
_{When p3} , M _p4 · t _p4 , and M _p5 · t _p5 are given, (M _p3 ·
It is _{advisable to make} t _p3 , + M _p5 · t _p5 ) and M _p4 · t _p4 slightly different.

The third, fourth and fifth ferromagnetic pinned layers 52 and 5
Since the magnetization directions of 3 and 54 are antiparallel to each other,
The magnetic properties of the third, fourth and fifth ferromagnetic pinned layers 52, 53 and 54
Qi moments have a relationship of canceling each other.
The fixed magnetic layer 51 is (t_p3+ T _p5)> T_p4To be
Once formed, the combined third and fifth ferromagnetic pinned layers 52, 54
The magnetization (composite magnetic moment) slightly remains. That
The residual magnetization of the lever is the exchange coupling magnetic field with the second antiferromagnetic layer 72.
Is further amplified by the magnetization of the entire second pinned magnetic layer 51.
Direction is fixed to the Y direction in the drawing, and the magnetic field of the first pinned magnetic layer 21 is fixed.
It has an antiparallel relationship with the direction of change.

As described above, the second pinned magnetic layer 51 includes the third,
The fourth and fifth ferromagnetic pinned layers 52, 53, 54 are antiferromagnetically coupled, and the third and fifth ferromagnetic pinned layers 52, 54
Since the combined magnetization of remains, it becomes an artificial ferrimagnetic state (synthetic ferri pinned).

The second pinned magnetic layer 21 is composed of three ferromagnetic layers (third, fourth and fifth ferromagnetic pinned layers 52, 53, 5).
4), but is not limited to this, and has a single ferromagnetic layer structure or between an odd number of ferromagnetic layers of 2N + 1 (where N is an integer of 1 or more) or more and these ferromagnetic layers. The nonmagnetic layer to be inserted may have a laminated structure. In order to prevent shunting of the detection current, N = 1 (single-layer structure of ferromagnetic layer) is preferably used.

When the first and second pinned magnetic layers 21 and 51 and the free magnetic layer 41 are configured as described above, as shown in FIGS. 1 and 2, the first and second pinned magnetic layers 21 and 51, respectively. And the magnetization direction of the free magnetic layer 41 intersect, and the magnetization direction of the first pinned magnetic layer 21 and the magnetization direction of the second pinned magnetic layer 51 are antiparallel. In addition, the most free magnetic layer 4 among the ferromagnetic layers forming the first pinned magnetic layer 21.
The magnetization direction of the second ferromagnetic pinned layer 23 close to 1 (opposite to the Y direction in the drawing) and the third ferromagnetic pinned closest to the free magnetic layer 41 in the ferromagnetic layers forming the second pinned magnetic layer 51. The magnetization direction of the layer 52 (Y direction in the drawing) is antiparallel.

In FIG. 5, the second ferromagnetic pinned layer 23, the first
The magnetic moments of the ferromagnetic free layer 42, the second ferromagnetic free layer 43, and the 32nd ferromagnetic pinned layer 52 are indicated by arrows. Reference symbol Hp12 indicates the magnetic moment due to the magnetization of the second ferromagnetic pinned layer 22, and reference symbol Hp23 indicates the magnetic moment due to the magnetization of the third ferromagnetic pinned layer 53. The direction of Hp12 is opposite to the Y direction in the drawing, and the direction of Hp23 is the Y direction in the drawing. The symbol Hf1 indicates the magnetic moment due to the magnetization of the first ferromagnetic free layer 42, and the symbol Hf2 indicates the magnetic moment due to the magnetization of the second ferromagnetic free layer 43. The direction of Hf1 is the X1 direction in the figure, and the direction of Hf2 is the opposite direction to the X1 direction in the figure.

Although not shown, the first nonmagnetic conductive layer 31 is arranged between the second ferromagnetic pinned layer 23 and the first ferromagnetic free layer 42, and the third ferromagnetic pinned layer 52 and the Two
The second nonmagnetic conductive layer 32 is arranged between the ferromagnetic free layers 43, and the nonmagnetic intermediate layer 44 is arranged between the first and second ferromagnetic free layers 42 and 43.

The second ferromagnetic pinned layer 23 and the first ferromagnetic free layer 42 are ferromagnetically interlayer-coupled via the first nonmagnetic conductive layer 31, and the magnetic field moment H due to the ferromagnetic interlayer coupling magnetic field.
b1 occurs. The direction of this magnetic field moment Hb1 is the second
The magnetization direction is parallel to the magnetization direction of the ferromagnetic pinned layer 23 and is opposite to the Y direction in the drawing. Further, the third ferromagnetic pinned layer 52 and the second ferromagnetic free layer 43 are ferromagnetically interlayer-coupled via the second nonmagnetic conductive layer 32, and a magnetic field moment Hb2 is generated by this ferromagnetic interlayer coupling magnetic field. The direction of this magnetic field moment Hb2 is parallel to the magnetization direction of the third ferromagnetic pinned layer 52, and is the Y direction in the figure. Therefore, the magnetic field moment Hb1,
The directions of Hb2 are antiparallel.

Therefore, since the magnetic field moments Hb1 and Hb2 applied to the free magnetic layer 41 cancel each other out, the directions of magnetization of the entire free magnetic layer 41, which is the combined magnetization of Hf1 and Hf2, are the second and third directions. Ferromagnetic pinned layers 23, 52
The magnetic field is not inclined by the ferromagnetic interlayer coupling magnetic field with and is aligned in the X1 direction by the bias layers 18 and 18.

Next, in the above spin-valve type thin film magnetic element 11, the magnetization direction of the free magnetic layer 41 and the first,
The relationship between the leakage magnetic fields of the second pinned magnetic layers 21 and 51 will be described. In FIG. 6, the magnetic moments of the first pinned magnetic layer 21, the free magnetic layer 41, and the second pinned magnetic layer 51 are indicated by arrows. Reference numeral Hp1 is the first pinned magnetic layer 21.
The magnetic moment due to the entire magnetization is shown, and the symbol Hp2 shows the magnetic moment due to the entire magnetization of the second pinned magnetic layer 51. The direction of Hp1 is opposite to the Y direction in the figure,
The direction of Hp2 is the Y direction in the figure. The symbol Hfr represents the magnetic moment due to the magnetization of the entire free magnetic layer 41,
The direction of this Hfr is the X1 direction in the figure.

Although not shown, the first pinned magnetic layer 21
And the free magnetic layer 41, the first non-magnetic conductive layer 31 is disposed between the second fixed magnetic layer 51 and the free magnetic layer 41.
The second non-magnetic conductive layer 32 is arranged between them.

In this spin-valve thin-film magnetic element 11, as shown in FIG. 6, the first and second pinned magnetic layers 2 are formed.
Dipole magnetic fields Hd1 and Hd2 leaked from 1, 51 respectively
It is applied to the free magnetic layer 41. The dipole magnetic field Hd1 of the first pinned magnetic layer 21 protrudes in the opposite direction to the Y direction in the figure, and then draws an arc to enter the free magnetic layer 41 from the opposite side to the Y direction in the figure to cause the free magnetic layer 41 to move freely. Magnetic layer 4
1 is in the Y direction in the figure. In addition, the second pinned magnetic layer 5
The dipole magnetic field Hd2 of 1 intrudes into the free magnetic layer 41 from the Y direction side of the free magnetic layer 41 in the form of a circular arc after protruding in the Y direction shown in the drawing, and then in the free magnetic layer 41 in the Y direction shown in the drawing.
It is the opposite direction. Therefore, the dipole magnetic fields Hd1 and Hd2
The directions of are in an antiparallel relationship.

Therefore, since the dipole magnetic fields Hd1 and Hd2 applied to the free magnetic layer 41 cancel each other out, the directions of the magnetization moment Hfr of the entire free magnetic layer 41 are the first and second pinned magnetic layers 21, 51 dipole magnetic fields Hd1 and Hd2
Is not tilted by the bias layers 18 and 18 and is aligned in the X1 direction in the figure.

Next, in the above spin-valve type thin film magnetic element 11, the direction of the detected current magnetic field by the detected current,
The relationship between the magnetization directions of the first and second pinned magnetic layers 21 and 51 will be described. In FIG. 7, the magnetic moments of the first pinned magnetic layer 21, the free magnetic layer 41, and the second pinned magnetic layer 51 are indicated by arrows. Reference symbol Hp1 indicates the magnetic moment due to the magnetization of the entire first pinned magnetic layer 21, and reference symbol Hp2 indicates the magnetic moment due to the magnetization of the entire second fixed magnetic layer 51. The direction of Hp1 is opposite to the Y direction in the figure, and the direction of Hp2 is the Y direction in the figure. Also, the symbol H
fr indicates a magnetic moment due to the magnetization of the entire free magnetic layer 41, and the direction of this Hfr is the X1 direction in the figure.

Although not shown, the first pinned magnetic layer 21
And the free magnetic layer 41, the first non-magnetic conductive layer 31 is disposed between the second fixed magnetic layer 51 and the free magnetic layer 41.
The second non-magnetic conductive layer 32 is arranged between them.

When a detection current is passed through the spin-valve type thin film magnetic element 11, the detection current mainly has non-magnetic conductive layers 31 and 32 (the free magnetic layer 41 and the first and second magnetic layers 41 and 32) having a small specific resistance.
(Between the fixed magnetic layers 21 and 51). At this time, when the detected current is made to flow in the X1 direction in the figure, the detected current indicated by the symbol i1 becomes the first nonmagnetic conductive layer 31 (the free magnetic layer 41 and the first nonmagnetic layer 41).
(Between the pinned magnetic layers 21), a detection current indicated by reference numeral i2 flows through the second non-magnetic conductive layer 32 (between the free magnetic layer 41 and the second pinned magnetic layer 51), and these detection currents i1 and i2 cause Detected current magnetic fields Hi1 and Hi2 are generated respectively.

On the side of the first pinned magnetic layer 21, the direction of one detected current magnetic field Hi1 is opposite to the Y direction in the drawing, and is the same as the direction of the magnetization moment Hp1 of the entire first pinned magnetic layer 21. The direction of the other detected current magnetic field Hi2 is the Y direction in the figure on the second pinned magnetic layer 51 side, which is the same as the direction of the magnetization moment Hp2 of the entire second pinned magnetic layer 51.

Therefore, in the above spin-valve type thin film magnetic element 11, when the detection currents i1 and i2 are made to flow in the X1 direction in the figure, the directions of the detection current magnetic fields Hi1 and Hi2 are the first and second pinned magnetic layers 21, respectively. Since the magnetization directions of the first and second pinned magnetic layers 21 and 51 are the same, the magnetizations of the first and second pinned magnetic layers 21 and 51 are not canceled by the detection current magnetic fields Hi1 and Hi2. Can be firmly fixed, and the asymmetry of the spin-valve thin-film magnetic element 11 can be reduced.

As shown in FIG. 7, the detected current magnetic fields Hi1 and Hi2 have an antiparallel relationship on the free magnetic layer 41 side and cancel each other out on the free magnetic layer 41. Therefore, the magnitude of the magnetic moment Hs of the detected current magnetic field applied to the free magnetic layer 41 is | Hi1-Hi2 |. However, since the detected current magnetic fields Hi1 and Hi2 cancel each other out in the free magnetic layer 41, the magnitude of the magnetic moment Hs becomes extremely small.

The magnetic field applied to the free magnetic layer 41 is, in addition to the bias magnetic fields from the bias layers 18 and 18, the magnetic field moments Hb1 and Hb2 and the dipole magnetic field magnetic moments Hd1 and Hd2 of the ferromagnetic interlayer coupling magnetic field described above. And the magnetic moment Hs of the detected current magnetic field. According to the spin-valve thin-film magnetic element 11, the sum of these is 0, that is, Hb1 +
Since it is possible to make Hb2 + Hd1 + Hd2 + Hs≈0,
The magnetization direction of the free magnetic layer 41 is not inclined by these magnetic moments, and the asymmetry of the spin-valve thin film magnetic element 11 can be made zero.

Next, a method of manufacturing the above spin valve thin film magnetic element 11 will be described. First, as shown in FIG.
The underlying layer 15 and the second antiferromagnetic layer 7 are formed on the lower insulating layer 164.
2, the second pinned magnetic layer 51, the second nonmagnetic conductive layer 32, the free magnetic layer 41, the first nonmagnetic conductive layer 31, the first pinned magnetic layer 21, the first antiferromagnetic layer 71, and the cap layer 14 in this order. After forming the laminated film M by means of sputtering, vapor deposition, or the like, the lift-off resist 101 is formed on the laminated film M.
To form.

The first pinned magnetic layer 21 is formed by laminating the first ferromagnetic pinned layer 22, the first nonmagnetic layer 24, and the second ferromagnetic pinned layer 23. In addition, the free magnetic layer 4
1 is the first ferromagnetic free layer 22, the non-magnetic intermediate layer 24, and the second
It is formed by stacking the ferromagnetic free layer 23. Further, the second pinned magnetic layer 51 includes a third ferromagnetic pinned layer 52, a second nonmagnetic layer 55, a fourth ferromagnetic pinned layer 53, and a third nonmagnetic layer 5.
6 and the fifth ferromagnetic pinned layer 54 are laminated. As shown in FIG. 8, the second ferromagnetic pinned layer 23 of the first pinned magnetic layer 21 is formed thicker than the first ferromagnetic pinned layer 22, and the first ferromagnetic free layer 42 of the free magnetic layer 41 is formed.
Are formed thicker than the second ferromagnetic free layer 43. Further, in the second pinned magnetic layer 51, the fourth ferromagnetic pinned layer 53, the third ferromagnetic pinned layer 52, and the fifth ferromagnetic pinned layer 54 are formed thicker in this order.

Next, as shown in FIG. 9, a portion not covered with the lift-off resist 101 is removed by ion milling to form an inclined surface and an isosceles trapezoidal laminate 11A.
To form.

Then, as shown in FIG. 10, the bias underlayer 19, the bias layer 18, the intermediate layer 17, and the electrode layer 16 are formed on the lift-off resist 101 and on both sides of the laminated body 11A.
Are sequentially laminated. Next, as shown in FIG. 11, the lift-off resist 101 is removed. Thus, the spin valve thin film magnetic element 11 is formed.

Next, the first and second antiferromagnetic layers 71 and 72 of the spin valve thin film magnetic element 11 are heat-treated in a magnetic field,
Exchange coupling magnetic fields are developed at the interfaces between the first and second antiferromagnetic layers 71 and 72 and the first and second pinned magnetic layers 21 and 51, respectively. FIG. 12 shows a cross-sectional view of the spin-valve thin-film magnetic element 11 shown in FIG. 11 viewed from the track width direction.
As shown in FIG. 12, heat treatment is performed while applying an external magnetic field H in the Y direction shown in the drawing. At this time, the external magnetic field H is generated by the free magnetic layer 41 and all the ferromagnetic layers 22, 23, 42, 43, 5 constituting the first and second pinned magnetic layers 21, 51.
The size is preferably such that the magnetization directions of 2, 53 and 54 are oriented in the same direction, specifically, 4.0 ×
It is preferable to apply an external magnetic field of 10 ⁵ A / m or more. The heat treatment is performed in a vacuum atmosphere or an inert gas atmosphere at a heat treatment temperature of 473 to 573K for 60 to 6K.
It is preferable to perform this for 00 minutes. When the heat treatment is performed as described above, the crystal structures of the first and second antiferromagnetic layers 71 and 72 are ordered, and an exchange coupling magnetic field is generated at the interface with the first and second pinned magnetic layers 21 and 51.

After the heat treatment is completed, the external magnetic field H is removed. When the external magnetic field H is removed, as shown in FIG. 13, the first and second ferromagnetic pinned layers 22 and 23 constituting the first pinned magnetic layer 21 are antiferromagnetically coupled, and the second ferromagnetic pinned layer is formed. The magnetization direction of 23 is reversed. In addition, the second pinned magnetic layer 51
The third, fourth, and fifth ferromagnetic pinned layers 52 and 5 that constitute
3 and 54 are antiferromagnetically coupled, and the magnetization direction of the fourth ferromagnetic pinned layer 53 is reversed. That is, in the first pinned magnetic layer 21, since the magnetization direction of the first ferromagnetic pinned layer 22 is fixed by the first antiferromagnetic layer 71, the magnetization direction of the first ferromagnetic pinned layer 22 remains oriented in the Y direction in the drawing, and the second ferromagnetic layer 21 remains. Pinned layer 23
The magnetization direction of is reversed in the direction opposite to the Y direction in the figure. Also,
In the second pinned magnetic layer 51, the fifth ferromagnetic pinned layer 5
Since the magnetization direction of No. 4 is fixed by the second antiferromagnetic layer 72, the magnetization direction of the fourth ferromagnetic pinned layer 53 remains reversed in the Y direction shown in the drawing. The magnetization direction of the third ferromagnetic pinned layer 52 remains in the Y direction in the figure due to the antiferromagnetic coupling with the fourth ferromagnetic pinned layer 53.

Finally, the bias layers 18, 18 are magnetized to generate a bias magnetic field, and the magnetization direction of the entire free magnetic layer 41 is aligned with the X1 direction in the figure. In this way, the spin valve thin film magnetic element 11 as shown in FIGS. 1 and 2 is obtained.

According to the above spin-valve thin-film magnetic element 11, the magnetization directions of the second ferromagnetic pinned layer 23 and the third ferromagnetic pinned layer 52 are antiparallel, so that the free magnetic layer 41 and the second The magnetic moments Hb1 and Hb2 of the ferromagnetic interlayer coupling magnetic fields developed by the ferromagnetic interlayer coupling with the third solid ferromagnetic pinned layers 23 and 52 cancel each other out, and the free magnetic layer 4
The magnetization direction of the whole 1 does not tilt, and asymmetry can be reduced.

Since the magnetization direction of the entire first pinned magnetic layer 21 and the magnetization direction of the entire second pinned magnetic layer 51 are antiparallel,
The dipole magnetic fields Hd1 and Hd2 applied to the free magnetic layer 41 may cancel each other, and the direction of the magnetization moment Hfr of the entire free magnetic layer 41 may be inclined by the dipole magnetic fields of the first and second pinned magnetic layers 21 and 51. The asymmetry can be reduced.

Further, in the above spin-valve type thin film magnetic element 11, when the detection currents i1 and i2 are made to flow in the X1 direction in the figure, the detection current magnetic fields Hi1 and Hi2 are respectively directed to the first and second pinned magnetic layers 21. , 51, the magnetization directions of the first and second pinned magnetic layers 21 and 51 are not canceled by the detection current magnetic fields Hi1 and Hi2, and the magnetization directions of the first and second pinned magnetic layers 21 and 51 are not cancelled. The magnetization can be firmly fixed, and the asymmetry of the spin valve thin film magnetic element 11 can be reduced.

Further, according to the above spin-valve thin-film magnetic element 11, since Hb1 + Hb2 + Hd1 + Hd2 + Hs≈0 can be established, the magnetization direction of the free magnetic layer 41 is not inclined by these magnetic moments, and the spin-valve thin-film The asymmetry of the magnetic element 11 can be set to zero.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 14 shows a spin valve thin film magnetic element 12 according to a second embodiment of the present invention.
FIG. 15 is a schematic sectional view seen from the magnetic recording medium side, and FIG. 15 is a schematic sectional view seen from the track width direction side of the spin-valve thin-film magnetic element 12.

The spin-valve thin-film magnetic element 12 shown in FIGS. 14 and 15 constitutes a thin-film magnetic head like the spin-valve thin-film magnetic element 11 of the first embodiment, and this thin-film magnetic head together with the inductive head. Constructs a floating magnetic head.

The spin-valve type thin film magnetic element 12 is
Similar to the spin valve thin film magnetic element 11 of the first embodiment, a dual spin valve in which a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer are sequentially stacked on both sides of the free magnetic layer 41 in the thickness direction. It is a thin film magnetic element.

That is, this spin valve thin film magnetic element 12
Is the second antiferromagnetic layer 72, the second pinned magnetic layer 61, the second nonmagnetic conductive layer 32, the free magnetic layer 41, and the first nonmagnetic conductive layer on the underlayer 15 laminated on the lower insulating layer 164. 31,
The first pinned magnetic layer 21, the first antiferromagnetic layer 71, and the cap layer 14 are sequentially stacked. In this manner, the layers from the base layer 15 to the cap layer 14 are sequentially laminated to form a laminated body 12A having a substantially trapezoidal shape in cross section and having a width corresponding to the track width.

The spin-valve thin-film magnetic element 12 is the spin-valve thin-film magnetic element 1 of the first embodiment described above.
The difference from 1 is that the second pinned magnetic layer 61 has a single-layer structure of a ferromagnetic layer.

Therefore, the first and second antiferromagnetic layers 71 and 72, the first and second nonmagnetic conductive layers 3 shown in FIGS.
1, 32, free magnetic layer 41 (first and second ferromagnetic free layers 42 and 43, non-magnetic intermediate layer 44), first pinned magnetic layer 21.
The (first and second ferromagnetic pinned layers 22 and 23, the first nonmagnetic layer 24), the conductive layers 16 and 16, the intermediate layers 17 and 17, the bias layers 18 and 18, and the bias underlayers 19 and 19 are the first
The upper and lower antiferromagnetic layers 71 and 7 described in the above embodiment.
2, upper and lower non-magnetic conductive layers 31, 32, free magnetic layer 41 (first and second ferromagnetic free layers 42, 43, non-magnetic intermediate layer 44), first pinned magnetic layer 21 (first, second) Ferromagnetic pinned layers 22, 23, first non-magnetic layer 24), conductive layers 16, 1
6, the intermediate layers 17 and 17, the bias layers 18 and 18, and the bias base layers 19 and 19 have the same configuration and material, and therefore the description thereof will be omitted.

The second pinned magnetic layer 61 is shown in FIGS.
As shown in FIG.
It is arranged between the antiferromagnetic layer 72 and the second nonmagnetic conductive layer 32. The second pinned magnetic layer 61 is made of NiFe alloy, C
o, CoNiFe alloy, CoFe alloy, CoNi alloy, etc., and particularly preferably Co. The thickness of the second pinned magnetic layer 61 is preferably in the range of 1 to 3 nm.

The magnetization direction of the second pinned magnetic layer 61 is
It is fixed in the Y direction in the figure by an exchange coupling magnetic field with the second antiferromagnetic layer 72.

In the above spin-valve thin-film magnetic element 12, as shown in FIGS. 14 and 15, the magnetization directions of the first and second pinned magnetic layers 21 and 61 and the free magnetic layer 4 respectively.
The magnetization direction of the first pinned magnetic layer 21 and the magnetization direction of the second pinned magnetic layer 61 are antiparallel to each other. The second ferromagnetic pinned layer 23 closest to the free magnetic layer 41 among the ferromagnetic layers forming the first pinned magnetic layer 21.
And the magnetization direction of the second pinned magnetic layer 61 (Y direction in the drawing) are antiparallel. The relationship of these magnetization directions is the same as that of the spin-valve type thin film magnetic element 11 of the first embodiment.

Therefore, in the spin-valve thin-film magnetic element 12 described above, as in the case of the spin-valve thin-film magnetic element 11 of the first embodiment shown in FIG. The direction of the magnetic field moment Hb1 of the ferromagnetic exchange coupling magnetic field given to the free magnetic layer 41 due to the ferromagnetic interlayer coupling with the layer 41 and the ferromagnetic pin coupling between the second pinned magnetic layer 61 and the free magnetic layer 41. As a result, the direction of the magnetic field moment Hb2 of the ferromagnetic exchange coupling magnetic field given to the free magnetic layer 41 becomes antiparallel.

Therefore, since the magnetic field moments Hb1 and Hb2 cancel each other out in the free magnetic layer 41, the magnetization directions of the entire free magnetic layer 41 are the same as those of the first and second pinned magnetic layers 21 and 5.
It is not inclined by the ferromagnetic interlayer coupling magnetic field with 1 and is aligned in the track width direction by the bias layers 18, 18.

Further, the above spin-valve type thin film magnetic element 1
2, the magnetization direction of the entire first pinned magnetic layer 21 and the magnetization direction of the second pinned magnetic layer 61 are antiparallel to each other. The direction of the magnetic moment of the dipole magnetic field of the first pinned magnetic layer 21 and the direction of the magnetic moment of the dipole magnetic field of the second pinned magnetic layer 61 applied to the free magnetic layer 41 are antiparallel.

Therefore, 2 applied to the free magnetic layer 41.
Since the two dipole magnetic fields cancel each other, the free magnetic layer 41
The direction of the entire magnetization moment is not inclined by the dipole magnetic fields of the first and second pinned magnetic layers 21 and 51, and is aligned in the track width direction by the bias layers 18 and 18.

In the spin-valve type thin film magnetic element 12, the detection current is applied to the first pinned magnetic layer 21 when the detection current flows through the first non-magnetic conductive layer 31, as in the case of FIG. The direction of the detected current magnetic field and the magnetization direction of the entire first pinned magnetic layer 21 are the same. The direction of the detection current magnetic field applied to the second pinned magnetic layer 61 when the detection current flows in the second non-magnetic conductive layer 32 and the second pinned magnetic layer 61.
Is the same as the magnetization direction.

Therefore, in the above spin-valve thin film magnetic element 12, the directions of the detected current magnetic fields are the same as the magnetization directions of the first and second pinned magnetic layers 21 and 61.
The magnetizations of the second pinned magnetic layers 21 and 61 are not canceled by the detected current magnetic field, and the first and second pinned magnetic layers 2
The magnetizations of 1 and 61 can be firmly fixed, and the asymmetry of the spin valve thin film magnetic element 12 can be reduced.

Further, according to the spin-valve thin-film magnetic element 12 described above, the magnetic field moment of the ferromagnetic interlayer coupling magnetic field and the dipole magnetic-field magnetic moment are similar to the spin-valve thin-film magnetic element 11 of the first embodiment. The total of the magnetic moments of the detected current magnetic field is 0 (Hb1 + Hb2 + Hd1 + Hd2 + Hs
≈0), the magnetization direction of the free magnetic layer 41 does not tilt due to these magnetic moments.

The spin valve thin film magnetic element 12 described above.
Except that the second pinned magnetic layer 61 has a single-layer structure.
It can be manufactured in the same manner as the spin valve thin film magnetic element 11 of the first embodiment.

According to the above spin-valve thin-film magnetic element 12, the same effects as those of the spin-valve thin-film magnetic element 11 of the first embodiment can be obtained, and the following effects can be obtained. That is, the above spin-valve thin-film magnetic element 1
In No. 2, since the second pinned magnetic layer 61 has a single-layer structure, the film thickness of the second pinned magnetic layer 61 is reduced, which reduces the thickness of the laminated body 12A, so that the detection current is shunted. Is suppressed, and the rate of change in magnetic resistance can be increased.

[0106]

As described above in detail, in the spin-valve type thin film magnetic element of the present invention, one fixed magnetic layer is 2
L ferromagnetic layers, that is, an even number of ferromagnetic layers, and the other fixed magnetic layer is a 1 or 2N + 1 ferromagnetic layer, that is, an odd number of ferromagnetic layers. At the same time as making the magnetization directions of the ferromagnetic layers adjacent to the non-magnetic conductive layers of the ferromagnetic layers constituting these pinned magnetic layers anti-parallel, the magnetization directions of the free magnetic layers are fixed. It can be aligned in the direction perpendicular to the magnetization direction of the layer. Therefore, in the spin-valve thin-film magnetic element of the present invention, the free magnetic layer is unlikely to be affected by the magnetization of the pinned magnetic layer, and the asymmetry can be reduced.

According to the spin-valve type thin film magnetic element of the present invention, the magnetic field moments Hb1 and Hb2 of the ferromagnetic exchange coupling magnetic fields generated by the ferromagnetic interlayer coupling between the one and the other fixed magnetic layers and the free magnetic layer are obtained. Since the directions are antiparallel in the free magnetic layer, the ferromagnetic interlayer coupling magnetic field due to the pinned magnetic layer is canceled, and the magnetization direction of the free magnetic layer is not inclined by this ferromagnetic interlayer coupling magnetic field.
The magnetization direction of the free magnetic layer can be aligned with the direction perpendicular to the magnetization direction of the fixed magnetic layer to reduce the asymmetry of the spin-valve thin film magnetic element.

Further, according to the spin-valve thin film magnetic element of the present invention, the directions of the magnetic moments Hd1 and Hd2 of the dipole magnetic fields of the one and the other fixed magnetic layers are antiparallel in the free magnetic layer. These dipole magnetic fields cancel each other out, and the magnetization direction of the free magnetic layer is not tilted by these dipole magnetic fields, and the magnetization direction of the free magnetic layer is aligned perpendicular to the magnetization direction of the pinned magnetic layer. The asymmetry of the magnetic element can be reduced.

Further, according to the spin valve thin film magnetic element of the present invention, when the magnetic moment of the detected current magnetic field applied to the free magnetic layer is Hs, Hb1 + Hb2 + Hd1 + Hd
Since 2 + Hs≈0 holds, the magnetization direction of the free magnetic layer does not tilt due to these magnetic moments,
The asymmetry of the spin valve thin film magnetic element can be made zero.

According to the spin-valve thin-film magnetic element of the present invention, the direction of the detection current magnetic field generated by the detection current is the same as the magnetization direction of these pinned magnetic layers in the pair of pinned magnetic layers. The magnetization of the pinned magnetic layer is not canceled by the detected current magnetic field, the magnetization of the pinned magnetic layer can be firmly fixed, and the asymmetry of the spin-valve thin-film magnetic element can be reduced.

The thin film magnetic head of the present invention is a thin film magnetic head capable of reading magnetic information, comprising the spin-valve type thin film magnetic element according to any one of the above, and the floating magnetic head of the present invention is The slider is equipped with the thin film magnetic head described above. Therefore, since the thin-film magnetic head and the floating magnetic head described above are provided with the spin-valve thin-film magnetic element having a small asymmetry, they are excellent in the symmetry of the reproduced waveform and can reduce the frequency of errors during reproduction. .

In the method of manufacturing a spin-valve thin film magnetic element of the present invention, one fixed magnetic layer is inserted between a ferromagnetic layer of 2M (where M is an integer of 1 or more) or more and these ferromagnetic layers. 2L of free magnetic layer
(Where L is an integer of 1 or more) or more and a non-magnetic intermediate layer inserted between these ferromagnetic layers,
The other fixed magnetic layer is a single layer structure consisting of a ferromagnetic layer,
Alternatively, it has a laminated structure including a ferromagnetic layer of 2N + 1 (where N is an integer of 1 or more) or more and a nonmagnetic layer inserted between these ferromagnetic layers, and the magnetization directions of these ferromagnetic layers are the same. In order to develop an exchange coupling magnetic field between the one and the other antiferromagnetic layers and the one and the other fixed magnetic layers, heat treatment is performed while applying an external magnetic field necessary to orient in the direction. The spin-valve type thin film magnetic element can be easily manufactured.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a spin-valve thin film magnetic element according to a first embodiment of the present invention viewed from a magnetic recording medium side.

FIG. 2 is a schematic sectional view of the spin-valve thin film magnetic element of FIG. 1 viewed from the track width direction side.

FIG. 3 is a perspective view showing a levitation type magnetic head including a spin-valve type thin film magnetic element according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a main part of a thin film magnetic head including a spin valve thin film magnetic element according to the first embodiment of the present invention.

5 is a schematic diagram for explaining a ferromagnetic interlayer coupling magnetic field developed between the first and second pinned magnetic layers and the free magnetic layer of the spin-valve thin-film magnetic element of FIG.

6 is a schematic diagram for explaining a dipole magnetic field applied to the free magnetic layer from the first and second pinned magnetic layers of the spin-valve thin film magnetic element of FIG.

7 shows the relationship between the detection current magnetic fields generated by the detection currents flowing in the first and second nonmagnetic conductive layers of the spin-valve thin film magnetic element of FIG. 1 and the magnetization directions of the first and second pinned magnetic layers. It is a schematic diagram for explaining.

FIG. 8 is a process drawing for explaining the manufacturing method of the spin-valve thin film magnetic element shown in FIG.

FIG. 9 is a process chart for explaining a method for manufacturing the spin-valve thin film magnetic element shown in FIG.

FIG. 10 is a process chart for explaining the manufacturing method of the spin-valve thin-film magnetic element shown in FIG.

FIG. 11 is a process chart for explaining the manufacturing method of the spin-valve thin film magnetic element shown in FIG.

FIG. 12 is a process drawing for explaining the manufacturing method of the spin-valve thin film magnetic element shown in FIG.

FIG. 13 is a process drawing for explaining the manufacturing method of the spin-valve thin film magnetic element shown in FIG.

FIG. 14 is a schematic sectional view of the spin-valve thin film magnetic element according to the second embodiment of the present invention as viewed from the magnetic recording medium side.

FIG. 15 is a schematic sectional view of the spin-valve thin-film magnetic element of FIG. 14 viewed from the track width direction side.

FIG. 16 is a schematic sectional view of a conventional spin-valve thin-film magnetic element as viewed from the magnetic recording medium side.

FIG. 17 is a schematic sectional view of the spin-valve thin-film magnetic element of FIG. 16 seen from the track width direction side.

FIG. 18 is a schematic diagram for explaining a dipole magnetic field applied to the free magnetic layer from the first and second pinned magnetic layers of the conventional spin valve thin film magnetic element.

[Explanation of symbols]

1 Thin film magnetic head 11, 12 Spin-valve type thin film magnetic element 21 First pinned magnetic layer (one pinned magnetic layer) 22 First ferromagnetic pinned layer (ferromagnetic layer) 23 Second ferromagnetic pinned layer (ferromagnetic layer) 24 First non-magnetic layer (non-magnetic layer) 31 First non-magnetic conductive layer (one non-magnetic conductive layer) 32 second non-magnetic conductive layer (other non-magnetic conductive layer) 41 Free magnetic layer 42 first ferromagnetic free layer (ferromagnetic layer) 43 Second ferromagnetic free layer (ferromagnetic layer) 44 Non-magnetic intermediate layer 51, 61 Second pinned magnetic layer (other pinned magnetic layer) 52 Third Ferromagnetic Pinned Layer (Ferromagnetic Layer) 53 Fourth ferromagnetic pinned layer (ferromagnetic layer) 54 fifth ferromagnetic pinned layer (ferromagnetic layer) 55 Second Nonmagnetic Layer (Nonmagnetic Layer) 56 Third Nonmagnetic Layer (Nonmagnetic Layer) 71 First Antiferromagnetic Layer (One Antiferromagnetic Layer) 72 Second antiferromagnetic layer (other antiferromagnetic layer) 16 Conductive layer 18 Bias layer 150 floating magnetic head

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Fumito Koike 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Naoya Hasegawa 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Al (56) Reference JP 10-334420 (JP, A) JP 7-169026 (JP, A) JP 10-105928 (JP, A) JP 9-251618 ( (58) Fields investigated (Int.Cl. ⁷ , DB name) G11B 5/39

Claims (11)

(57) [Claims] 1. A nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer are sequentially stacked on both sides of the free magnetic layer in the thickness direction, and the free magnetic layer, the pair of nonmagnetic conductive layers, and the pair of nonmagnetic conductive layers are formed. The pair of pinned magnetic layers includes a pair of conductive layers that apply a detection current, and a pair of bias layers that align the magnetization directions of the free magnetic layers, and the free magnetic layers are 2 L (where L is an integer of 1 or more). )
The above ferromagnetic layers and a non-magnetic intermediate layer inserted between these ferromagnetic layers are laminated, and the magnetization directions of the adjacent ferromagnetic layers are made anti-parallel to each other, and One of the pinned magnetic layers is in a magnetic state, and is composed of a ferromagnetic layer of 2M (where M is an integer of 1 or more) or more and a nonmagnetic layer inserted between these ferromagnetic layers. At the same time, the magnetization directions of the adjacent ferromagnetic layers are made antiparallel to each other so that the whole is in a ferrimagnetic state, and the magnetization direction of the one fixed magnetic layer is the same as that of the adjacent one antiferromagnetic layer. Is fixed in the cross direction of the magnetization directions of the entire free magnetic layer by the exchange coupling magnetic field of the other, and the other fixed magnetic layer is a single layer structure composed of a ferromagnetic layer,
Alternatively, a ferromagnetic layer of 2N + 1 (where N is an integer of 1 or more) or more and a nonmagnetic layer inserted between these ferromagnetic layers are stacked, and the magnetization directions of the adjacent ferromagnetic layers are An anticoupling magnetic field with the other antiferromagnetic layer adjacent to the other pinned magnetic layer, the magnetization direction of which is the antiferromagnetic layer. Is fixed in an antiparallel direction of the magnetization direction of the one pinned magnetic layer, and the magnetization direction of the ferromagnetic layer closest to the free magnetic layer among the ferromagnetic layers constituting the one pinned magnetic layer and the other pinned direction. A spin-valve thin-film magnetic element, wherein the magnetization direction of the ferromagnetic layer closest to the free magnetic layer among the ferromagnetic layers constituting the magnetic layer is antiparallel. 2. A magnetic field of a ferromagnetic exchange coupling magnetic field generated by the ferromagnetic interlayer coupling between the ferromagnetic layer closest to the free magnetic layer and the free magnetic layer among the ferromagnetic layers forming the one fixed magnetic layer. The direction of the moment Hb1 and the ferromagnetic exchange coupling magnetic field generated by the ferromagnetic interlayer coupling between the free magnetic layer and the ferromagnetic layer closest to the free magnetic layer of the other fixed magnetic layers. 2. The spin valve thin film magnetic element according to claim 1, wherein the direction of the magnetic field moment Hb2 is antiparallel to the free magnetic layer. 3. The direction of the magnetic moment Hd1 of the dipole magnetic field of the one pinned magnetic layer and the direction of the magnetic moment Hd2 of the dipole magnetic field of the other pinned magnetic layer are antiparallel in the free magnetic layer. The spin-valve thin-film magnetic element according to claim 1 or 2, wherein 4. Hb1 + Hb2 + Hd1 + Hd2 + Hs≈0 when the magnetic moment of the detection current magnetic field applied to the free magnetic layer by the detection current flowing through the pair of non-magnetic conductive layers is Hs. The spin valve thin film magnetic element according to claim 1. 5. The method according to claim 1, wherein the L is 1, the M is 1, and the other fixed magnetic layer has a ferromagnetic layer single layer structure. The spin-valve thin-film magnetic element described. 6. The spin-valve thin-film magnetic element according to claim 1, wherein the L is 1, the M is 1, and the N is 1. 7. The direction of a detection current magnetic field applied to the one fixed magnetic layer when a detection current flows and the magnetization direction of the entire one fixed magnetic layer are the same, and the other direction is the same. 7. The direction of the detection current magnetic field applied to the pinned magnetic layer of 1 and the magnetization direction of the other pinned magnetic layer are the same direction. Spin valve thin film magnetic element. 8. A thin-film magnetic head capable of reading magnetic information, comprising the spin-valve thin-film magnetic element according to any one of claims 1 to 7. 9. A flying magnetic head comprising the thin film magnetic head according to claim 8 on a slider. 10. One of an antiferromagnetic layer, a ferromagnetic layer of 2M or more (where M is an integer of 1 or more) or more, and a nonmagnetic layer inserted between these ferromagnetic layers are laminated. A fixed magnetic layer, a non-magnetic conductive layer on one side, a ferromagnetic layer of 2 L (where L is an integer of 1 or more) or more, and a non-magnetic intermediate layer inserted between these ferromagnetic layers are laminated. Between the free magnetic layer, the other non-magnetic conductive layer, and the ferromagnetic layer, or between a ferromagnetic layer of 2N + 1 (where N is an integer of 1 or more) or more and these ferromagnetic layers. The other pinned magnetic layer having a laminated structure composed of the inserted non-magnetic layer and the other antiferromagnetic layer are laminated, and an external magnetic field is applied to the one pinned magnetic layer and the other pinned magnetic layer. Heat treatment is performed with all the ferromagnetic layers that make up the magnetic layer oriented in the same direction. A spin valve type characterized in that an exchange coupling magnetic field is developed between one antiferromagnetic layer and the one pinned magnetic layer, and between the other antiferromagnetic layer and the other pinned magnetic layer, respectively. Method of manufacturing thin film magnetic element. 11. The magnitude of the external magnetic field is 4.0 ×
The method for manufacturing a spin-valve thin film magnetic element according to claim 10, wherein the spin valve type thin film magnetic element has a current density of 10 ⁵ A / m or more.