JP3484823B2 - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JP3484823B2 JP3484823B2 JP14001995A JP14001995A JP3484823B2 JP 3484823 B2 JP3484823 B2 JP 3484823B2 JP 14001995 A JP14001995 A JP 14001995A JP 14001995 A JP14001995 A JP 14001995A JP 3484823 B2 JP3484823 B2 JP 3484823B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- diameter
- outer peripheral
- core material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばリードフレーム
等を用いる半導体デバイスにおいて半導体素子上の電極
と外部リードを接続する場合などに用いるボンディング
ワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting an electrode on a semiconductor element to an external lead in a semiconductor device using a lead frame or the like.
【０００２】[0002]
【従来の技術】従来、例えばリードフレーム等を用いる
半導体デバイスにおいて該デバイス上に搭載されるＩＣ
やＬＳＩなどの半導体素子（チップ）の電極と外部リー
ドとを接続するために通常０．０２〜０．１ｍｍの範囲
の直径を有するボンディングワイヤが用いられている。2. Description of the Related Art Conventionally, in a semiconductor device using, for example, a lead frame or the like, an IC mounted on the device.
A bonding wire having a diameter in the range of 0.02 to 0.1 mm is usually used to connect an electrode of a semiconductor element (chip) such as an LSI or an LSI to an external lead.
【０００３】上記のようなボンディングワイヤには、一
般に以下のような特性が要求される。
（１）大気中でワイヤの先端を加熱溶融する場合に、酸
化皮膜のない真球状のボールが形成される。
（２）超音波熱圧着方式によるボンディングを行った場
合に、ワイヤとチップの電極およびワイヤと外部リード
との間で、それぞれ良好な接合状態が得られる。
（３）半導体素子組み立て中に、隣り合うワイヤ同士の
接触が起こらない。
（４）長期間保存した場合にも、ワイヤとチップの電極
およびワイヤと外部リードとの間の接合力が劣下しな
い。そのため前記のようなボンディングワイヤとして、
従来は純度９９．９９重量％（以下、重量％を単に％と
記す）以上のＡｕ線が主に用いられてきた。The bonding wire as described above is generally required to have the following characteristics. (1) When the tip of the wire is heated and melted in the atmosphere, a spherical ball having no oxide film is formed. (2) When the bonding is performed by the ultrasonic thermocompression bonding method, a good bonding state can be obtained between the wire and the electrode of the chip and between the wire and the external lead. (3) Adjacent wires do not come into contact with each other during the assembly of the semiconductor device. (4) Even when stored for a long period of time, the bonding force between the wire and the electrode of the chip and between the wire and the external lead is not deteriorated. Therefore, as a bonding wire as described above,
Conventionally, Au wire having a purity of 99.99% by weight (hereinafter,% by weight is simply referred to as%) or more has been mainly used.
【０００４】しかしながら、近年の半導体デバイスの多
ピン化にともない、ボンディングワイヤ間隔の狭ピッチ
化およびボンディング距離の長距離化が進行してきてお
り、そのため従来のボンディングワイヤを用いた場合に
半導体デバイス組立時におけるワイヤ同士の接触不良が
頻発し、半導体デバイスの収率が低下することが大きな
問題となってきている。However, with the recent increase in the number of pins of semiconductor devices, the pitch of the bonding wires is becoming narrower and the bonding distance is becoming longer. Therefore, when the conventional bonding wires are used, when assembling the semiconductor devices. It is becoming a big problem that the contact failure between the wires in 1) occurs frequently and the yield of the semiconductor device decreases.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記の問題点
に鑑みて提案されたもので、半導体デバイス組立時にお
けるワイヤ同士の接触不良が起こりにくく、多ピン半導
体デバイス用として好適なボンディングワイヤを提供す
ることを目的とする。SUMMARY OF THE INVENTION The present invention has been proposed in view of the above problems, and a bonding wire suitable for a multi-pin semiconductor device is less likely to cause contact failure between wires during semiconductor device assembly. The purpose is to provide.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明によるボンディングワイヤは、以下の構成
としたものである。In order to achieve the above object, the bonding wire according to the present invention has the following constitution.
【０００７】 すなわち、純度９９．９９重量％以上の
Ａｕよりなる芯材の周面にＡｕ合金より成る外周材を被
覆し、上記芯材の直径が全ワイヤ直径の３０％以上、９
０％以下であり、かつ上記外周材を構成するＡｕ合金
が、０．０５〜０．５重量％のＲｕ、０．１〜５．０重
量％のＰｔ、０．１〜５．０重量％のＰｄ、０．１〜１
０重量％のＡｇのうち１種もしくは２種以上を含有し、
残部がＡｕおよび不可避不純物よりなることを特徴とす
る。That is, the peripheral surface of an Au alloy is coated on the peripheral surface of a core material made of Au having a purity of 99.99% by weight or more, and the diameter of the core material is 30% or more of the total wire diameter.
Au alloy which is 0% or less and constitutes the above outer peripheral material
Is 0.05 to 0.5 wt% Ru, 0.1 to 5.0 wt.
% Pt, 0.1-5.0 wt% Pd, 0.1-1
Containing one or more of 0 wt% Ag,
The balance consists of Au and inevitable impurities .
【０００８】 或いは、純度９９．９９重量％以上のＡ
ｕよりなる芯材の周面にＡｕ合金より成る外周材を被覆
し、上記芯材の直径が全ワイヤ直径の３０％以上、９０
％以下であり、かつ上記外周材を構成するＡｕ合金が、
０．０５〜０．５重量％のＲｕ、０．１〜５．０重量％
のＰｔ、０．１〜５．０重量％のＰｄ、０．１〜１０重
量％のＡｇのうち１種もしくは２種以上を含有し、さら
にＮａ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ、Ｃｏ、Ｎｉ、Ｃｕ、
Ｇａ、Ｉｎ、Ｇｅ、Ｓｎ、Ｓｂ、Ｙおよび希土類元素の
うち１種または２種以上を合計で０．０００１〜０．０
５重量％含有し、残部がＡｕおよび不可避不純物よりな
ることを特徴とする。 Alternatively, A having a purity of 99.99% by weight or more
The outer surface of the core material made of u is coated with the outer material of Au alloy.
The diameter of the core material is 30% or more of the total wire diameter, 90
% Or less and the Au alloy constituting the outer peripheral material is
0.05-0.5 wt% Ru, 0.1-5.0 wt%
Pt, 0.1-5.0 wt% Pd, 0.1-10 wt
It contains one or more of Ag in the amount of
Na, Be, Ca, Sr, Ba, Co, Ni, Cu,
Ga, In, Ge, Sn, Sb, Y and rare earth elements
Of these, one kind or two or more kinds in total is 0.0001 to 0.0
5% by weight with the balance being Au and unavoidable impurities
It is characterized by
【０００９】[0009]
【００１０】[0010]
【作用】一般に、半導体デバイス組立時に起こるワイヤ
同士の接触不良は、ワイヤボンディング時のワイヤの曲
がり（ワイヤカール）が大きい場合ほど、あるいはボン
ディング後に樹脂封入する際の樹脂の封入抵抗によるワ
イヤの変形が大きい場合ほど起こりやすい。従って、半
導体デバイス組立時に起こるワイヤ同士の接触不良を防
止するためには、ワイヤカールが小さく、同時に樹脂封
入時の樹脂の封入抵抗による変形が小さいことが望まし
い。In general, a defective contact between wires that occurs during semiconductor device assembly is more likely to occur when the wire bend (wire curl) during wire bonding is larger, or when the wire is deformed due to resin encapsulation resistance during resin encapsulation after bonding. The larger it is, the more likely it is to occur. Therefore, in order to prevent defective contact between wires that occurs during semiconductor device assembly, it is desirable that the wire curl is small and at the same time the deformation due to the resin encapsulation resistance during resin encapsulation is small.
【００１１】通常、ボンディングワイヤは伸縮後の熱処
理によって適当な伸びを示すように調質された状態で用
いられるが、調質後のワイヤは加工組織が残って硬度が
高い芯部と再結晶が起こって硬度の低い表面部（外周
部）の２重構造を有する。本発明者等は種々検討の結
果、この硬度の低いワイヤ外周部がキャピラリ等のワイ
ヤボンディング機の各治具との間に大きな摩擦抵抗を有
することが、ワイヤカールが大きくなる原因の１つであ
ることを見いだした。Normally, the bonding wire is used in a state of being tempered by heat treatment after expansion and contraction, but the tempered wire has a processed structure remaining and has a core portion with high hardness and recrystallization. It has a double structure of the surface portion (outer peripheral portion) having a low hardness. As a result of various studies, the present inventors have found that the outer peripheral portion of the wire having low hardness has a large frictional resistance with each jig of a wire bonding machine such as a capillary, which is one of the causes of the large wire curl. I found something.
【００１２】そこで本発明は、前記のように純度９９．
９９％以上の金よりなる芯材の周面に金合金よりなる外
周材を被覆したもので、その外周材によってワイヤ外周
部の硬度が高くなり、ワイヤボンディング機の各治具と
の間の摩擦抵抗が低減され、それによってワイヤカール
が大きくなるのを防ぐことができる。また上記のように
外周部に硬度の高い金合金を用いることは、ボンディン
グ後の樹脂封入時の樹脂の封入抵抗によるワイヤの変形
を抑制する働きもあり、本発明のボンディングワイヤ
は、上記の両者の効果により、半導体デバイス等の組立
時にワイヤ同士が接触するのを可及的に低減することが
可能となるものである。Therefore, according to the present invention, as described above, the purity of 99.
An outer peripheral material made of gold alloy is coated on the peripheral surface of a core material made of 99% or more of gold, and the outer peripheral material increases the hardness of the outer peripheral portion of the wire and causes friction with each jig of the wire bonding machine. The resistance is reduced, which can prevent the wire curl from increasing. In addition, the use of a gold alloy having a high hardness in the outer peripheral portion also serves to suppress the deformation of the wire due to the resin encapsulation resistance during resin encapsulation after bonding, and the bonding wire of the present invention is With the above effect, it is possible to reduce the contact of the wires with each other as much as possible when assembling the semiconductor device or the like.
【００１３】また上記の芯材の直径を、前述のようにボ
ンディングワイヤ全体の直径の３０％以上、９０％以下
となるようにしたのは、芯材の直径がボンディングワイ
ヤ全体の直径の９０％を越えると、外周部が薄くなりす
ぎて上記のような効果を充分に発揮できないおそれがあ
り、また３０％未満であると芯材が少なすぎて単一構造
のワイヤと変わらなくなり、ワイヤを２重構造にする効
果が失われるからである。The diameter of the core material is set to be 30% or more and 90% or less of the diameter of the entire bonding wire as described above because the diameter of the core material is 90% of the diameter of the entire bonding wire. If it exceeds, the outer peripheral portion may be too thin and the above effects may not be sufficiently exerted. If it is less than 30%, the core material is too small to be the same as a single-structured wire. This is because the effect of making the structure heavy is lost.
【００１４】上記の芯材を構成する純度９９．９９％以
上の金としては、例えば従来よりボンディングワイヤと
して用いられている０．０１％未満のＣａ、Ｇｅ、Ｂｅ
等を含む希薄金合金を用いればよい。また外周材として
用いられる金合金としては、強度と耐熱性が高いこと、
およびボンディングワイヤに要求される諸特性を劣化さ
せる元素（例えばボール表面に酸化膜を形成させるＭｇ
やＣｒ等の酸化しやすい元素）を多量に含まないことが
好ましい。As the gold having a purity of 99.99% or more, which composes the above core material, for example, Ca, Ge, Be of less than 0.01%, which has been conventionally used as a bonding wire, is used.
A dilute gold alloy containing the above may be used. Further, the gold alloy used as the outer peripheral material has high strength and high heat resistance,
And an element that deteriorates various properties required for the bonding wire (for example, Mg that forms an oxide film on the ball surface).
It is preferable not to include a large amount of elements such as Cr and Cr that are easily oxidized.
【００１５】上記の外周材として用いられる金合金の実
施形態の一例としては、前述のようにＲｕ、Ｐｔ、Ｐ
ｄ、Ａｇのうち１種もしくは２種以上を含有したものを
用いることができる。上記のような元素を含有する金合
金は、それらの添加元素（含有元素）が金中に固溶もし
くは析出することにより結晶粒が微細化して強度を向上
させることができるものである。As an example of an embodiment of the gold alloy used as the outer peripheral material, as described above, Ru, Pt, P
It is possible to use one containing at least one of d and Ag. In the gold alloy containing the above-mentioned elements, the additional elements (containing elements) form a solid solution or precipitate in gold, whereby the crystal grains are refined and the strength can be improved.
【００１６】この場合、上記の各元素の添加量は、前述
のようにＲｕにあっては０．０５〜０．５重量％、Ｐｔ
にあっては０．１〜５．０重量％、Ｐｄにあっては０．
１〜５．０重量％、Ａｇにあっては０．１〜１０重量％
の範囲が好ましい。各添加元素の添加量が、それぞれ上
記の下限未満であると添加の効果が不充分であり、逆に
上限を越えるとボールが真球にならなくなったり、伸線
が困難で細線を得られなくなったりする等の不都合が生
じるためである。In this case, the addition amount of each of the above elements is 0.05 to 0.5% by weight in Ru as described above, and Pt is Pt.
0.1 to 5.0% by weight in the case of Pd and 0.
1 to 5.0% by weight, 0.1 to 10% by weight for Ag
Is preferred. If the addition amount of each additive element is less than the above lower limit, the effect of addition is insufficient, and if it exceeds the upper limit, the ball does not become a true sphere, and it is difficult to draw a wire and a fine wire cannot be obtained. This is because such inconvenience may occur.
【００１７】また外周材として用いられる金合金の実施
形態の他の例としては、前述のように上記と同様にＲ
ｕ、Ｐｔ、Ｐｄ、Ａｇのうち１種もしくは２種以上を含
有し、さらにＮａ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ、Ｃｏ、Ｎ
ｉ、Ｃｕ、Ｇａ、Ｉｎ、Ｇｅ、Ｓｎ、Ｓｂ、Ｙおよび希
土類元素のうち１種または２種以上を含有したものを用
いることもできる。上記のように前者の添加元素の他に
更に後者の添加元素を加えることにより強度や耐熱性を
さらに向上させることが可能となる。As another example of the embodiment of the gold alloy used as the outer peripheral material, as described above, R is the same as above.
u, Pt, Pd, and Ag containing one or more of Na, Be, Ca, Sr, Ba, Co, N
It is also possible to use a material containing one or more of i, Cu, Ga, In, Ge, Sn, Sb, Y and a rare earth element. As described above, by adding the latter additive element in addition to the former additive element, it becomes possible to further improve strength and heat resistance.
【００１８】この場合、各元素の添加量は前述のように
上記前者の添加元素については上記と同様とし、後者の
添加元素については合計の添加量が０．０００１〜０．
０５重量％の範囲とするのが好ましい。上記の添加量が
０．０００１％未満では添加による効果が不充分であ
り、逆に０．０５％を越えるとボールに表面酸化膜がで
きワイヤの接合性が低下するためである。In this case, the addition amount of each element is the same as that of the former addition element as described above, and the total addition amount of the latter addition element is 0.0001-0.
It is preferably in the range of 05% by weight. This is because if the above-mentioned addition amount is less than 0.0001%, the effect due to the addition is insufficient, and conversely if it exceeds 0.05%, a surface oxide film is formed on the ball and the bondability of the wire deteriorates.
【００１９】なお本発明のような２重構造のボンディン
グワイヤを製造する手段等は適宜であり、例えば金合金
と金からなる２重構造のビレットを、熱間押し出し加工
や冷間溝圧延加工等により圧接した後、伸線加工する方
法等を用いればよい。また上記のように２重構造とする
ことにより、ボンディングワイヤに要求される諸特性を
劣化させることなく、半導体デバイス等の組立時のワイ
ヤ同士の接触が起こりにくい多ピン半導体デバイス用と
して好適なボンディングワイヤを得ることが可能とな
る。The means for producing the double-bonded bonding wire as in the present invention is suitable, and for example, a double-structured billet made of a gold alloy and gold is hot extruded or cold grooved. The method of wire drawing after pressure contacting by the method may be used. In addition, the double structure as described above is suitable for a multi-pin semiconductor device without deteriorating various characteristics required for a bonding wire and making it difficult for wires to come into contact with each other during assembly of a semiconductor device or the like. It becomes possible to obtain a wire.
【００２０】[0020]
【実施例】以下、本発明によるボンディングワイヤの具
体的な実施例について説明する。純度９９．９９９％の
高純度金、および所定の添加元素を０．１〜１％を含む
金母合金を用いて、芯材用のＡｕ−０．０００５％Ｂｅ
合金を溶解鋳造した。なお後述する実施例では全て同じ
材質の芯材を用いた。また下記表１に示すような種々の
添加元素を含有する組成Ｎo.１〜１４の外周材用の金合
金を溶解鋳造した。EXAMPLES Specific examples of the bonding wire according to the present invention will be described below. Using Au-0.0005% Be for the core material, high-purity gold having a purity of 99.999% and a gold mother alloy containing 0.1 to 1% of a predetermined additive element are used.
The alloy was melt cast. In the examples described below, the same core material was used. Further, gold alloys for outer peripheral materials having compositions No. 1 to 14 containing various additive elements as shown in Table 1 below were melt-cast.
【００２１】[0021]
【表１】 [Table 1]
【００２２】上記の芯材用の鋳塊は円柱状に形成し、外
周材用の鋳塊は芯材用の鋳塊が丁度入る内径を有する中
空円筒状に形成した。その中空円筒状の外周材用の鋳塊
の内穴内に芯材用の鋳塊を挿入した状態で溝ロール加工
を施した後、１０００℃で３時間の接合熱処理を施し
た。さらに熱処理後の試料について、ダイヤモンドダイ
スを用いて伸線加工を施し、図１に示すような芯材１の
周面に外周材２を被覆してなる直径０．０３ｍｍの実施
例１〜１６の複数種のボンディングワイヤを作製した。
その各ボンディングワイヤに熱処理を施すことにより破
断伸びを６％前後に調整して試料とし、それらの特性を
調べた。その結果を表２に示す。The ingot for the core material was formed in a cylindrical shape, and the ingot for the outer peripheral material was formed in a hollow cylindrical shape having an inner diameter into which the ingot for the core material fits. Groove roll processing was performed in a state where the core ingot was inserted into the inner hole of the hollow cylindrical ingot for outer peripheral material, and then the joining heat treatment was performed at 1000 ° C. for 3 hours. Further, the sample after the heat treatment was subjected to wire drawing using a diamond die, and the peripheral surface of the core material 1 as shown in FIG. Multiple types of bonding wires were produced.
By subjecting each of the bonding wires to a heat treatment, the breaking elongation was adjusted to around 6% to prepare samples, and their characteristics were examined. The results are shown in Table 2.
【００２３】[0023]
【表２】 [Table 2]
【００２４】なお上記表２中の外周材の組成は、前記表
１の組成Ｎo.を表し、芯材直径比率はボンディングワイ
ヤ全体の直径に対する芯材の直径の比率を百分率で表し
たもので、その比率の調整は、前記の鋳塊の直径および
中空穴の径を変えることによって行い、それらの鋳塊を
加工して得られたボンディングワイヤ全体の直径に対す
る芯部の直径の比率を断面写真より測定した。The composition of the outer peripheral material in the above Table 2 represents the composition No. of the above Table 1, and the core material diameter ratio represents the ratio of the diameter of the core material to the diameter of the entire bonding wire in percentage. The adjustment of the ratio is performed by changing the diameter of the ingot and the diameter of the hollow hole, and the ratio of the diameter of the core portion to the diameter of the entire bonding wire obtained by processing those ingots is obtained from the cross-sectional photograph. It was measured.
【００２５】ワイヤ強度は引張り試験により求めた。ま
たボール性状は、正常なボールが形成されるかどうかを
調べるもので、ワイヤボンディング機を用いてボールを
形成し、その外観を観察することにより判定し、ボール
形状が真球状でボールの表面に酸化皮膜が全く観察され
なかったものを良とした。The wire strength was determined by a tensile test. The ball property is to check whether or not a normal ball is formed.The ball is formed by using a wire bonding machine, and it is judged by observing its appearance. The case where no oxide film was observed was regarded as good.
【００２６】ボンディング接合性は、ボンディングワイ
ヤと半導体素子の電極および外部リードとの接合状況を
調べるもので、ワイヤボンディング機を用い超音波熱圧
着方式によりボンディングを実施したワイヤについて、
そのワイヤにフックを引っかけた状態で引張り試験を実
施した場合の破断強度（プル強度）を求め、その値によ
り評価した。またボンディング接合性の経時変化につい
ては、上記と同様な方法でワイヤボンディングした試料
を２００℃で１００時間保持した後のプル強度を求め評
価した。The bonding bondability is to examine the bonding condition between the bonding wire and the electrode of the semiconductor element and the external lead. For the wire bonded by the ultrasonic thermocompression bonding method using a wire bonding machine,
The breaking strength (pull strength) when a tensile test was carried out with the hook hooked on the wire was obtained, and the value was evaluated. Regarding the change in bonding bondability with time, the pull strength after the sample wire-bonded by the same method as above was held at 200 ° C. for 100 hours was evaluated.
【００２７】ワイヤカール量δ１については、半導体チ
ップをダイボンディングした１００ピンのリードフレー
ムに、上記と同様な方法で４ｍｍの間隔でワイヤボンデ
ィングした試料について、工場顕微鏡を用いて測定し
た。なお上記のワイヤカール量δ１は、図２の（ａ）に
示すように真上から見て本来まっすぐに接続される理想
的な配線状態Ｗに対して実際にボンディングされたとき
にワイヤＷが図のＷ１に変位したときの変位量δ１で定
義し、ワイヤ間の比較は１００本のワイヤにおける測定
値の平均値および最大値で行った。The wire curl amount δ1 was measured using a factory microscope on a sample which was wire-bonded to a 100-pin lead frame to which a semiconductor chip was die-bonded at intervals of 4 mm by the same method as described above. It should be noted that the above wire curl amount δ1 is obtained when the wire W is actually bonded to the ideal wiring state W which is originally connected straight as seen from above as shown in FIG. It was defined by the displacement amount δ1 when it was displaced to W1, and the comparison between the wires was performed by the average value and the maximum value of the measured values of 100 wires.
【００２８】ワイヤ流れ量は、上記のようにワイヤボン
ディングした後にそれらを樹脂で被覆する際の樹脂の封
入抵抗によるワイヤの変形状況を調べるもので、上記と
同様な方法で４ｍｍの間隔にワイヤボンディングした試
料についてモールディング機（トランスファーモールド
型）によりエポキシ樹脂（住友ベークライト製、ＥＭＥ
−６３００）を金型温度１８０℃、射出圧１００Ｋｇ／
ｃｍ2 の条件でモールドしたときのワイヤの流れ量δ２
をＸ線透過装置により撮影したＸ線写真から求め、その
値から評価した。なおワイヤ流れ量δ２は、前記図２の
（ａ）のワイヤ変位状態Ｗ１から更にエポキシ樹脂をモ
ールドしたときにワイヤＷが同図（ｂ）のＷ２の状態に
変形した場合のワイヤ変形量δ２で示した。The wire flow amount is to check the deformation state of the wires due to the encapsulation resistance of the resin when the wires are covered with the resin after the wire bonding as described above, and the wire bonding is performed at the intervals of 4 mm by the same method as described above. Epoxy resin (Sumitomo Bakelite, EME)
-6300) with a mold temperature of 180 ° C and an injection pressure of 100 kg /
Wire flow rate δ2 when molded under the condition of cm 2
Was determined from an X-ray photograph taken by an X-ray transmission device and evaluated from the value. The wire flow amount δ2 is the wire deformation amount δ2 when the wire W is deformed from the wire displacement state W1 in FIG. 2A to the state W2 in FIG. 2B when epoxy resin is further molded. Indicated.
【００２９】上記実施例１〜１６に対する比較例１、２
として、芯材の直径比率が前記の条件を満たさないもの
を製造すると共に、既存の市販品１、２についても上記
と同様の諸特性値を測定した。その結果を下記表３に示
す。なお市販品１、２は本発明のような外周材が被覆さ
れていない単層構成のもので、その材質は市販品１が
０．００４重量％のＧｅと、それ以外がＡｕよりなり、
市販品２は０．０００５重量％のＣａ、０．０００５重
量％のＢｅと、それ以外がＡｕよりなる。Comparative Examples 1 and 2 with respect to Examples 1 to 16 above
As the core material, a core material having a diameter ratio not satisfying the above-mentioned conditions was manufactured, and various properties similar to those described above were measured for the existing commercial products 1 and 2. The results are shown in Table 3 below. The commercially available products 1 and 2 have a single-layer structure not covered with the outer peripheral material as in the present invention, and the materials thereof are 0.004 wt% Ge of the commercially available product 1 and Au other than the above.
The commercial product 2 is composed of 0.0005% by weight of Ca, 0.0005% by weight of Be, and other than Au.
【００３０】[0030]
【表３】 [Table 3]
【００３１】上記の表２と表３との対比からも明らかな
ように、表２に示す本発明による実施例１〜１６のボン
ディングワイヤは、表３の比較例１、２や市販品１、２
に比べてワイヤカール量の平均値や最大値が小さく、ま
たワイヤ流れ量も同等もしくはそれ以下で、他の諸特性
においても極めて良好であることがわかる。As is clear from the comparison between Tables 2 and 3, the bonding wires of Examples 1 to 16 according to the present invention shown in Table 2 are Comparative Examples 1 and 2 of Table 3 and commercial products 1, Two
It is understood that the average value and the maximum value of the wire curl amount are smaller than that of the above, and the wire flow amount is equal to or less than that, and is extremely excellent in other various characteristics.
【００３２】[0032]
【発明の効果】以上説明したように、本発明によるボン
ディングワイヤは、純度９９．９９重量％以上のＡｕよ
りなる芯材の周面にＡｕ合金より成る外周材を被覆し、
上記芯材の直径が全ワイヤ直径の３０％以上、９０％以
下となるようにしたことによって、ワイヤカール量やワ
イヤ流れ量を小さくできるもので、例えば半導体デバイ
ス組立時におけるワイヤ同士の接触不良が起こりにくい
多ピン半導体デバイス用として好適なボンディングワイ
ヤを提供できる等の効果がある。As described above, in the bonding wire according to the present invention, the peripheral surface of the core material made of Au having a purity of 99.99% by weight or more is coated with the outer peripheral material made of Au alloy,
By setting the diameter of the core material to 30% or more and 90% or less of the total wire diameter, it is possible to reduce the amount of wire curl and the amount of wire flow. There is an effect that a bonding wire suitable for a multi-pin semiconductor device that is unlikely to occur can be provided.
【図１】本発明によるボンディングワイヤの概略構成を
示す斜視図。FIG. 1 is a perspective view showing a schematic configuration of a bonding wire according to the present invention.
【図２】（ａ）・（ｂ）はワイヤカール量やワイヤ流れ
量を示す説明図。2A and 2B are explanatory views showing a wire curl amount and a wire flow amount.
１ 芯材 ２ 外周材 1 core material 2 Peripheral material
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/60
Claims (2)
る芯材の周面にＡｕ合金より成る外周材を被覆し、上記
芯材の直径が全ワイヤ直径の３０％以上、９０％以下で
あり、かつ上記外周材を構成するＡｕ合金が、０．０５
〜０．５重量％のＲｕ、０．１〜５．０重量％のＰｔ、
０．１〜５．０重量％のＰｄ、０．１〜１０重量％のＡ
ｇのうち１種もしくは２種以上を含有し、残部がＡｕお
よび不可避不純物よりなることを特徴とするボンディン
グワイヤ。1. A core material made of Au having a purity of 99.99% by weight or more is coated with a peripheral material made of Au alloy, and the diameter of the core material is 30% or more and 90% or less of the total wire diameter.
And the Au alloy constituting the outer peripheral material is 0.05
~ 0.5 wt% Ru, 0.1-5.0 wt% Pt,
0.1-5.0 wt% Pd, 0.1-10 wt% A
It contains one or more of g and the balance is Au.
And a bonding wire comprising unavoidable impurities .
る芯材の周面にＡｕ合金より成る外周材を被覆し、上記
芯材の直径が全ワイヤ直径の３０％以上、９０％以下で
あり、かつ上記外周材を構成するＡｕ合金が、０．０５
〜０．５重量％のＲｕ、０．１〜５．０重量％のＰｔ、
０．１〜５．０重量％のＰｄ、０．１〜１０重量％のＡ
ｇのうち１種もしくは２種以上を含有し、さらにＮａ、
Ｂｅ、Ｃａ、Ｓｒ、Ｂａ、Ｃｏ、Ｎｉ、Ｃｕ、Ｇａ、Ｉ
ｎ、Ｇｅ、Ｓｎ、Ｓｂ、Ｙおよび希土類元素のうち１種
または２種以上を合計で０．０００１〜０．０５重量％
含有し、残部がＡｕおよび不可避不純物よりなることを
特徴とするボンディングワイヤ。2. A Au alloy having a purity of 99.99% by weight or more.
The outer peripheral material made of Au alloy is coated on the peripheral surface of the core material
When the core diameter is 30% or more and 90% or less of the total wire diameter
And the Au alloy constituting the outer peripheral material is 0.05
~ 0.5 wt% Ru, 0.1-5.0 wt% Pt,
0.1-5.0 wt% Pd, 0.1-10 wt% A
1 or 2 or more of g, Na,
Be, Ca, Sr, Ba, Co, Ni, Cu, Ga, I
One of n, Ge, Sn, Sb, Y and rare earth elements
Or 0.0001 to 0.05% by weight in total of two or more kinds
A bonding wire containing, the balance being Au and inevitable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14001995A JP3484823B2 (en) | 1995-05-15 | 1995-05-15 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14001995A JP3484823B2 (en) | 1995-05-15 | 1995-05-15 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08316263A JPH08316263A (en) | 1996-11-29 |
| JP3484823B2 true JP3484823B2 (en) | 2004-01-06 |
Family
ID=15259053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14001995A Expired - Fee Related JP3484823B2 (en) | 1995-05-15 | 1995-05-15 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3484823B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003023029A (en) * | 2001-07-09 | 2003-01-24 | Tanaka Electronics Ind Co Ltd | Gold wire for connecting semiconductor element and manufacturing method therefor |
| CN105428335B (en) * | 2015-12-09 | 2017-12-26 | 北京达博有色金属焊料有限责任公司 | A kind of bonding wire |
| JP6811466B1 (en) * | 2019-09-26 | 2021-01-13 | 田中貴金属工業株式会社 | Medical Au-Pt-Pd alloy |
-
1995
- 1995-05-15 JP JP14001995A patent/JP3484823B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08316263A (en) | 1996-11-29 |
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