JP3482888B2 - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame used in a resin-sealed semiconductor device in which an electrode bottom surface is exposed for the purpose of downsizing, thinning, and weight reduction, in which a semiconductor element is mounted, and a resin sealing using the same. Type semiconductor device and its manufacturing method.

[0002]

2. Description of the Related Art In recent years, high-density mounting of semiconductor parts has been required in order to cope with the miniaturization of electronic equipment, and accordingly, the size and thickness of semiconductor devices have been reduced.

A conventional resin-encapsulated semiconductor device and its manufacturing method will be sequentially described below. An FBGA (fine pitch ball grid array) package has been developed as a package that meets the demand for high-density mounting of semiconductor components.

FIG. 15 is a view showing an FBGA package as a conventional resin-encapsulated semiconductor device, and a sectional view thereof.

In FIG. 15, the semiconductor element 1 has an adhesive 2
It is bonded and mounted on the double-sided printed circuit board 3 via. On the upper and lower surfaces of the double-sided printed wiring board 3, wiring patterns 4a,
4b is formed, and the upper and lower wiring patterns 4a and 4b are electrically connected by the conductor 6 formed on the surface of the through hole 5. The electrode pad 7 formed on the upper surface of the semiconductor element 1 and the wiring pattern 4a are electrically connected by a thin metal wire 8. The surface of the wiring pattern 4a other than the place for electrical connection by the thin metal wire 8 is covered with a solder resist 9. The semiconductor element 1, the thin metal wires 8 and the double-sided printed wiring board 3 are molded and protected by the sealing resin 10.

Except for a part of the surface of the wiring pattern 4b on the lower surface of the double-sided printed wiring board 3, a solder ball 11 is formed on the surface of the wiring pattern 4b which is covered with the solder resist 9 and is not covered with the solder resist 9. To be done.
The solder balls 11 are on the lower surface of the double-sided printed wiring board 3,
It is arranged two-dimensionally in a grid pattern. And FBGA
When the semiconductor device mounted by the package method is mounted on a mounting board such as a printed board, electrical connection is made through the solder balls 11.

In the case of the conventional resin-encapsulated semiconductor device as shown in FIG. 16, the semiconductor element 1 is bonded and mounted on the double-sided printed circuit board 3 via the adhesive 2. A wiring pattern 4 is formed on the upper surface of the double-sided printed wiring board 3, and the wiring pattern 4 is electrically connected by a conductor 6 formed on the surface of a through hole 5 on the side surface and serves as an external terminal. The electrode pad 7 formed on the upper surface of the semiconductor element 1 and the wiring pattern 4 are electrically connected by a thin metal wire 8. The surface of the wiring pattern 4 other than the place for electrical connection by the thin metal wires 8 is covered with a solder resist 9. The semiconductor element 1, the thin metal wires 8 and the printed wiring board 3 are sealed and protected by a sealing resin 10 by potting. The through hole 5 is a terminal portion for connection with the mounting board, which is formed by cutting the through hole 5 on the side surface connecting the semiconductor devices into a semicircular shape and separating it.

[0008]

However, the conventional resin-encapsulated semiconductor device has various problems as described below.

The resin-encapsulated semiconductor device of the FBGA package system shown in FIG. 15 has two-dimensionally arranged external electrode terminals (solder balls) on the lower surface of the semiconductor device.
The feature is that the number of terminals can be increased in the same package size as compared with the QFP package. However, on the other hand, there are some points inferior to the QFP package. That is, in the FBGA package, (1) the encapsulating resin portion is projected on one surface of the double-sided printed wiring board, and cannot be made thin. (2) When manufacturing FBGA packages, the conventional Q
Introducing new manufacturing equipment other than FP package manufacturing equipment is indispensable, resulting in increased costs due to capital investment. Further, in the FBGA package system, a glass / epoxy resin substrate is usually used as a double-sided printed wiring board. Therefore, it is necessary to prevent warpage of the substrate itself by sealing the semiconductor element with resin, and to perform gold plating treatment to prevent damage to the substrate surface of the runner part that is the resin injection sealing port,
There are many problems to be solved in the manufacturing technology, such as the need to ensure the uniformity of the heights of the horizontal surfaces of a plurality of solder balls when the substrate warps. Guaranteeing the reliability of the package, especially the moisture resistance, is also an important subject for consideration. For example, if the adhesive force at the interface between the glass / epoxy resin and the mold resin is weak, quality assurance becomes difficult in environmental tests such as high temperature / high temperature test, pressure / cooker test and the like.

On the other hand, in the resin-encapsulated semiconductor device as shown in FIG. 16, when the resin is encapsulated by potting, the encapsulating resin takes a long time to cure and the mass productivity is poor, and the resin is injected. There is a problem that it is easy to entrain air and resin voids are likely to occur. Further, since the molding pressure is not applied during resin molding, the resin void cannot be reduced, and the resin void expands during mounting, which causes a problem such as cracking in the sealing resin portion.

An object of the present invention is to solve the above-mentioned conventional problems, and to provide a resin-encapsulated semiconductor device which is compact and highly reliable while realizing a thin structure, and a lead frame therefor. An object is to provide a resin-sealed semiconductor device using the same and a method for manufacturing the same.

[0012]

In order to achieve the above object, the present invention relates to a resin-encapsulated semiconductor device,
A method for mold-sealing a resin-sealed semiconductor device and means for a lead frame are provided.

[0013]

[0014]

[0015]

The resin-sealed semiconductor device of the present invention includes a die pad portion, and the signal-connecting leads, a semi-conductor element, and the adhesive for bonding the semiconductor element and the die pad portion, the electrode pads and the signal of the semiconductor element A resin-sealed semiconductor device comprising a connecting member electrically connecting a connecting lead portion, and a sealing resin for sealing the semiconductor element and the connecting member,
The resin-sealed semiconductor device has a resin portion that is concave from the surface of the signal connection lead portion.

The resin-encapsulated semiconductor device of the present invention includes a die pad portion and a signal connection lead arranged in a grid pattern.
And de section, and the semi-conductor elements, and the adhesive for bonding the semiconductor element and the die pad portion, and a connecting member for electrically connecting the electrode pad and the signal connecting leads of the semiconductor element, the semiconductor element and the connecting member resin made by a sealing resin for sealing the
It is a sealing type semiconductor device, and is a resin sealing type semiconductor device which has a concave resin part from the surface of a lead part for signal connection.

The method for producing a resin encapsulated semiconductor device of the present invention, electricity and semiconductors elements, the semiconductor element mounting portion or the die pad section for bonding the semiconductor element, the electrode pads and the signal connecting leads of the semiconductor element to a connecting member for connecting a semiconductor element mounting portion or the die pad portion, the semiconductor element and the connecting member that abolish resin sealing trees Aburafutome type semiconductor device
In the manufacturing method of the above, the die pad portion and the signal
Step of preparing a lead frame having a connecting lead portion
And the semiconductor element of the lead frame is mounted.
Attach the sealing film to the side of the lead frame
Process to close the upper part of the gate part and the upper part of the runner part
And seal it from the runner and gate of the lead frame.
Resin sealed semi comprising the step of sealing by filling the sealing resin
It is a manufacturing method of a conductor device .

The typical operation of the present invention is as follows. In the lead frame of the present invention, the die pad portion, the signal connecting lead portion arranged in the vicinity of the die pad portion, the outer terminal portion connected to the signal connecting lead portion, and the frame frame and the outer terminal portion bottom surface are bonded. In a lead frame made of a resin film, the runner part, which is the resin introduction part, and the gate part are arranged to enable mold resin encapsulation within the lead frame thickness, and resin encapsulation with good productivity, quality, and mounting reliability. It is possible to supply a characteristic lead frame suitable for a semiconductor device.

Further, in the lead frame of the present invention, in the lead frame including the die pad portion, the signal connection lead portion arranged in the vicinity of the die pad portion, and the external terminal portion connected to the signal connection lead portion, By placing the runner part, which is the resin introduction part, and the gate part, it is possible to mold resin encapsulation within the lead frame thickness, and productivity,
It is possible to supply a characteristic lead frame suitable for a resin-sealed semiconductor device having high quality and mounting reliability.

Further, in the lead frame of the present invention, the semiconductor element mounting portion, the signal connecting lead portion arranged in an array in the vicinity of the semiconductor element mounting portion, and the external terminal portion connected to the signal connecting lead portion. In the lead frame consisting of the frame and the resin film that adheres to the bottom surface of the external terminal, the runner part, which is the resin introduction part, and the gate part are arranged, enabling mold resin molding within the lead frame thickness and productivity. It is possible to supply a characteristic lead frame suitable for a resin-sealed semiconductor device having high quality and mounting reliability.

Further, in the resin-encapsulated semiconductor device of the present invention, due to the function of the encapsulating film, the resin surface is concave compared to the surface of the signal connecting lead portion, and it is small, thin, reliable, mountable and productive. It is possible to provide a good stackable resin-sealed semiconductor device.

In the resin-encapsulated semiconductor device of the present invention, the function of the encapsulating film is small, thin, and reliable in a grid array arrangement suitable for multiple terminals in which the resin surface is concave from the surface of the mounting substrate. It is possible to provide a stackable resin-encapsulated semiconductor device having excellent productivity, mountability, and productivity.

Further, in the method of manufacturing a resin-sealed semiconductor device of the present invention, the runner portion of the lead frame and the resin injection surface of the gate portion are covered with a sealing film, clamped and filled with resin to seal. By doing so, a resin surface can be molded in a concave shape from the lead frame, and a resin molding method for a thin electrode bottom surface exposed resin-molded semiconductor device by a molding die having high mounting reliability and productivity.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a lead frame, a resin-sealed semiconductor device using the same and a manufacturing method thereof according to the present invention will be described below with reference to the drawings. Further, here, as for the method of manufacturing the resin-sealed semiconductor device, the mold structure and the mold-sealing method will be described.

First, the lead frame of this embodiment will be described with reference to FIG. FIG. 1 is a plan view showing a lead frame of this embodiment. FIG. 2 is a perspective view showing a signal connecting lead portion.

As shown in FIG. 1, in the lead frame of this embodiment, the signal connecting leads 12 are the outer lead portions 1.
3 and is supported by the frame 14.
Further, at least the outer lead portion 13 connected to the signal connection lead 12 and the bottom surface of the frame 14 are adhered to the resin film 15 having adhesiveness. In FIG. 1, the region indicated by the broken line is the region where the resin film 15 is in close contact. Further, unlike the conventional lead frame, the lead frame of the present embodiment does not require a suspension lead portion, and can expand the mounting range of the semiconductor element, which has been conventionally limited.

A bottom surface continuous with the signal connection lead 12 serves as an external connection terminal, and the signal connection lead 12 has a stepped end, a central opening 16 is formed, and a die pad 17 is arranged. There is. Then, the gate portion 18 is arranged in a region of the lead frame of the present embodiment that is away from the signal connection lead portion 12, and serves as an injection port for injecting the sealing resin melted during resin molding from the runner portion 19 into the opening portion 16. Is. The encapsulating resin surrounds the semiconductor element adhered on the die pad 17 and the connection member for electrically connecting the semiconductor element and the signal connecting lead portion 12, the opening 16, the gate portion 18, the air bend portion 20. To be filled. Although not shown in detail, the air bend portion 20 is exposed to the bottom surface side by the runner portion 19 or the through hole. Further, in the through gate method, semiconductor devices are connected by the gate portion 18.

As shown in FIG. 1, by arranging the gate portion 18 at the corner of the signal connecting lead portion 12, the number of terminals of the signal connecting lead portion 12 is not reduced, and the resin moldability is good and the cost is low. It is possible to provide a thin resin-encapsulated semiconductor device.

A groove portion 21 as shown in FIG. 2 is formed on a part of the surface of the signal connecting lead portion 12, and when a semiconductor element is mounted on the lead frame of this embodiment and resin-sealed, The adhesiveness with the sealing resin is improved. As shown in FIG. 2 (a), the groove 21 may be formed on each side of the signal connecting lead portion 12, or as shown in FIG. 2 (b), two on one side and one on the other side. A difference may be provided in the number of groove portions 21 provided. Also,
The step portion 22 may be formed at the tip of the signal connecting lead portion 12.

The feature of the lead frame of this embodiment is that the resin frame type semiconductor device of which the electrode bottom surface is exposed is inexpensive because the runner portion 19 and the gate portion 18 connected to the runner portion 19 are provided in the frame frame 14. Moreover, it is possible to achieve stable production. Further, another advantage is that the lead frame of the present embodiment can be used at a low cost by simplifying and sharing a sealing mold at the time of manufacturing a resin-sealed semiconductor device.

By disposing the runner portion 19 and the gate portion 18 in the lead frame of this embodiment, conventionally, the remaining gate portion remaining in the corner portion of the signal connecting lead portion 12 is disposed in the area of the lead frame. Therefore, the quality of the cutting by the cutting machine is stable, the efficiency is improved, and the c-plane processing conventionally provided in the corner portion of the semiconductor device is unnecessary.
Further, the opening 16 filled with the sealing resin is engraved on the lead frame to improve the adhesion, and to produce a thin resin bottom exposed resin-sealed semiconductor device having good reflow resistance. Is something that can be done.

In the lead frame of this embodiment, a nickel (Ni) layer is provided as a base plating on the frame made of a copper (Cu) material, and a palladium (P) layer is formed thereon.
The d) layer is a three-layer metal-plated lead frame in which a thin film gold (Au) layer is plated on the uppermost layer. However, other than copper (Cu) material, 42 alloy material and the like can be used, and may be plated with a noble metal other than nickel (Ni), palladium (Pd), and gold (Au). It is not always necessary to use three-layer plating. The lead frame is a lead frame that is not provided with a tie bar that prevents the sealing resin from flowing out during resin sealing.

As shown in FIG. 1, the lead frame does not have a single pattern, but a plurality of lead frames arranged in the left, right, top and bottom. In the lead frame of this embodiment, the thickness is 0.5 [mm], the depth of the runner portion 19 is 0.3 [mm], and the width is 2.0 [mm].
And

Next, a lead frame according to another embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a plan view showing the lead frame of this embodiment.

As shown in FIG. 3, in the lead frame of this embodiment, the signal connecting lead portion 12 is connected to the outer lead portion 13 and is supported by the frame frame 14. Then, at least the outer lead portion 13 connected to the signal connecting lead portion 12 and the bottom surface of the frame 14 are adhered to each other by the resin film 15 having adhesiveness. In FIG. 3, the region shown by the broken line is the region where the resin film is adhered. Then, by fixing the signal connection lead portion 12, the second signal connection lead portion 23, and the die pad portion 17 on the resin film 15, the signal connection lead portions 12 and 23 are arranged in a grid pattern. become.

The bottom surface continuous with the signal connection leads 12 and 23 constitutes an external connection terminal when the resin-sealed semiconductor device is formed, and the die pad portion 17 is arranged in the central opening 16. Then, the gate portion 18 is arranged in a region of the lead frame that is away from the signal connecting lead portions 12 and 23, and the resin melted at the time of resin molding is passed from the runner portion 19 to the opening portion 1
It becomes an injection port for injecting into 6. The encapsulating resin surrounds the semiconductor element adhered on the die pad 17 and the connection member for electrically connecting the semiconductor element and the signal connecting lead portion 12, the opening 16, the gate portion 18, the air bend portion 20. To be filled. Although not shown in detail, the air bend portion 20 is exposed to the bottom surface side by the runner portion 19 or the through hole. Further, in the through gate method, semiconductor devices are connected by the gate portion 18.

In the present embodiment, the resin film 15 having an adhesive property is used for fixing the die pad portion 17, and especially for the resin on the lower surface side of the die pad portion 17 and on the external terminal portion on the rear surface side of the signal connecting lead portions 12 and 23. The resin film 15 serves to prevent the encapsulation resin from wrapping around during encapsulation. Due to the presence of the resin film 15, resin burrs are formed on the lower surface of the die pad portion 17 and the back surface of the external terminal portion. It can be prevented from being formed. This resin film 15 is a tape based on a resin containing polyethylene terephthalate, polyimide, polycarbonate or the like as a main component, and after resin sealing, the adhesive force can be weakened and peeled off by UV irradiation, chemical treatment, or peeling, Further, it is resistant to a high temperature environment during resin sealing.

The resin burr is a residual resin for the lead frame generated at the time of resin sealing, and is an unnecessary portion in resin molding.

The feature of the present invention is that the frame frame 14 has a runner portion 19 and the gate portion 1 connected to the runner portion 19.
By providing 8, the encapsulating mold can be simplified and shared, and a high-quality resin bottom surface-exposed resin-encapsulated semiconductor device arranged in an inexpensive thin grid can be provided. Also, the opening 16 filled with the sealing resin is engraved on the lead frame, and a thin electrode-exposed resin-sealed semiconductor device arranged in a grid shape with good reflow resistance is possible. become. Furthermore, the lead frame to be prepared is a lead frame that is not provided with a tie bar that prevents the sealing resin from flowing out at the time of resin sealing.

Next, the resin-sealed semiconductor device of this embodiment will be described. 4 is a top perspective view showing the resin-sealed semiconductor device of this embodiment, and FIG. 5 is a bottom perspective view thereof.
FIG. 6 is a cross-sectional view taken along the line AA1 in FIG.

As shown in FIGS. 4, 5 and 6, the resin-sealed semiconductor device of this embodiment is provided with the signal connecting lead portion 12 and the die pad portion 17 for supporting the semiconductor chip 24. There is. The semiconductor chip 24 is bonded onto the die pad portion 17 with an adhesive such as silver paste, and the electrode pads of the semiconductor chip 24 and the signal connecting leads 12 are electrically connected to each other by the thin metal wires 25. . The signal connecting lead portion 12, the die pad portion 17, the semiconductor chip 24, and the thin metal wire 25 are
It is sealed in the sealing resin 26.

The sealing resin 26 does not exist on the lower surface side of the signal connecting lead portion 12, the lower surface of the signal connecting lead portion 12 is exposed, and the lower surface of the signal connecting lead portion 12 is mounted on the mounting substrate. It becomes the connection surface with. That is, the lower surface portion of the signal connection lead 12 constitutes the external terminal portion 27.
Incidentally, in the bottom perspective view of FIG. 5, the die pad portion 17 has a structure exposed from the sealing resin 26. Further, instead of the die pad portion 17 in FIG. 5, a pole portion 28 may be used as a small divided die pad portion to support the semiconductor element. In FIG.
For convenience sake, the pole portion 28 and the pole portion 28 are shown side by side.

In the resin-sealed semiconductor device of this embodiment,
Since there is no outer lead serving as an external terminal on the side of the signal connecting lead portion 12 and the lower surface of the signal connecting lead portion 12 serves as the external terminal portion 27, the semiconductor device can be downsized. You can

Further, in the resin-sealed semiconductor device of this embodiment, since the external terminal portion 27 and the die pad portion 17 are formed so as to project from the surface of the sealing resin 26, the resin-sealed semiconductor device is mounted on the mounting substrate. At the time of mounting the external terminal portion and the land portion of the mounting substrate at the time of mounting, the standoff height of the external terminal portion 27 is secured in advance. Therefore, the external terminal portion 27 can be used as it is as an external terminal, and it is not necessary to attach a solder ball to the external terminal portion 27 for mounting on the mounting board, and
It is advantageous in manufacturing cost.

The feature of this embodiment is that the lead portion 12 for signal connection and the external terminal portion 2 connected to the lead 12 for signal connection are provided.
Using a lead frame in which an adhesive resin film 15 is adhered to the bottom surface side of a lead frame having an opening 16 composed of 7 and the bottom surface of the die pad 17 is fixed to the center of the opening 16, The upper surface of the runner portion 19 and the gate portion 18 arranged on the lead frame is pressed by a mold together with the resin film 15 in the sealing process to fill the resin, and thus the opening 16 from the signal connecting lead portion 12 is formed.
The resin surface of can be dented. As a result, the top and bottom surfaces of the semiconductor device can be secured and the resin surface is dented, so that mounting stability on the mounting board can be obtained, and
Stackable. For example, the resin-encapsulated semiconductor device of this embodiment shown in FIG. 7 can be mounted as a stack structure as shown in FIG. FIG. 7 is a perspective view showing the protrusion amount (standoff) of the lead portion of the resin-sealed semiconductor device of the present embodiment in an emphasized manner, and FIG. 8 is a stacked mounting of the resin-sealed semiconductor device of the present embodiment. It is a perspective view showing a state. The resin-encapsulated semiconductor device shown in FIG. 7 has a standoff formed from the encapsulation resin 26 and has a protruding external terminal portion 27, and is stacked and mounted by connecting the external terminal portions 27 on the upper and lower surfaces. Even so, the resin-sealed semiconductor devices can be electrically connected to each other.

The resin-encapsulated semiconductor device of this embodiment uses the lead frame shown in FIG. 1 described above, and by appropriately disposing the gate portion 18 at the corner portion of the signal connecting lead portion 12, a favorable result can be obtained. This is a thin resin-sealed semiconductor device in which molding is ensured and a resin is filled in the thickness of the lead frame by a mold sealing method that does not affect the terminal arrangement of the external terminal portion 27. In addition, since the opening 16 is filled with the sealing resin 26, the bonding strength can be improved, and the moisture resistance can be improved despite the thin semiconductor device. Due to this effect, when the IR reflow process or the resin-sealed semiconductor device is mounted on the printed wiring board by soldering, blistering or peeling caused by water trapped near the bonding interface of the semiconductor element, or cracks in the sealing resin It is possible to prevent the occurrence of such a phenomenon, and to prevent the occurrence of electrical connection failure due to peeling of the connecting portion between the semiconductor element and the signal connecting lead portion. Also, due to the effect of repeated mechanical or thermal stress applied to the semiconductor device after mounting with the printed wiring board,
The resistance to the stress at the interface of the sealing resin 26 is improved.

For example, as shown in FIG. 9, by forming a step on the signal connecting lead portion 12, when the resin is sealed, the cut portion of the semiconductor device can be connected by the sealing resin 26 as shown in the figure. The mounting resistance can be increased.
FIG. 9 is a top perspective view showing a resin-sealed semiconductor device.

By disposing the groove portion 21 shown in FIG. 2 on the bottom surface or the top surface of the signal connecting lead portion 12,
Since the resin film used for resin encapsulation is formed in the groove 21 by molding, the effect of the encapsulating resin entering the groove 21 improves the resistance to stress at the interface of the encapsulating resin. Also, as a result, the solder enters the groove 21 during mounting,
The solder joint strength at the joint interface is improved.

In the resin-encapsulated semiconductor device of this embodiment, since the encapsulation resin 26 and the signal connecting lead portion 12 are within the thickness, the warp of the semiconductor device with respect to the temperature change is much smaller than that of the conventional semiconductor device. Element 24 and lead portion 1 for signal connection
It is possible to prevent the occurrence of electrical connection failure due to peeling of the connection portion with 2. Therefore, it is not necessary to use solder balls for the external terminal portions 27, and it is possible to provide them as a land grid array or a land electrode. Further, depending on the size of the semiconductor device, the number of signal connecting lead portions, etc., the thickness of the signal connecting lead portion is
It was set to 0.5 [mm].

Another embodiment of the resin-sealed semiconductor device of the present invention will be described. 10, FIG. 11 and FIG. 12 are views showing the resin-sealed semiconductor device of the present embodiment. FIG. 10 is a top perspective view, FIG. 11 is a bottom perspective view thereof, and FIG. FIG.

As shown in the figure, the resin-encapsulated semiconductor device of this embodiment is provided with signal connecting leads 12 and 23 arranged in an array and a die pad 17 for supporting the semiconductor element 24. There is. Then, the die pad portion 17
The semiconductor element 24 is bonded to the upper portion by an adhesive, and the electrode pad of the semiconductor element 24 and the signal connecting lead portion 12,
23 are electrically connected to each other by a thin metal wire 25. Then, the regions of the signal connecting lead portions 12 and 23, the die pad portion 17, the semiconductor element 24 and the thin metal wire 25 are sealed in a sealing resin 26. Further, the encapsulating resin 26 does not exist on the lower surface side of the signal connecting lead portions 12 and 23 arranged in an array, and the signal connecting lead portion 1 is provided.
The lower surfaces of the lead wires 2 and 23 are exposed, and the lower surfaces of the signal connection lead portions 12 and 23 serve as the connection surface with the mounting board. That is, the lower surfaces of the signal connection leads 12 and 23 form the external terminals 27 and 29.

Also in the resin-sealed semiconductor device of this embodiment, the standoff heights of the external terminal portions 27 and 29 are similarly secured in advance. Therefore, the external terminal portion can be used as it is as an external terminal, which is advantageous in terms of manufacturing steps and manufacturing cost.

Further, in the resin-sealed semiconductor device of this embodiment, the semiconductor element 24 can be overhung on the signal connecting lead portion 23, and the external terminal portion 2 can be formed in an array.
7, 29 are formed. Of course, the resin-sealed semiconductor device of this embodiment can also be connected in a stack.

Next, a method of manufacturing the resin-sealed semiconductor device of this embodiment will be described. FIG. 13 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of this embodiment, which is a diagram showing the order of steps.

First, a lead frame having a signal connecting lead portion, an external lead portion, a semiconductor element mounting portion or a die pad portion, a pole portion, and a runner portion and a gate portion as shown in FIG. 1 is prepared. .

Then, as shown in FIG. 13A, the semiconductor element 24 is bonded onto the die pad portion 17 with an adhesive,
The electrode pad of the semiconductor element 24 and the signal connection lead portion 12 are electrically joined by a joining member typified by the thin metal wire 25, and the components are aligned and mounted in the sealing mold. As shown in the figure, a resin film 15 having adhesiveness is attached to the bottom surface region of the lead frame used here.

Next, as shown in FIG. 13B, the sealing film 30 is supplied to the lead frame to which the semiconductor element 24 is joined. The sealing film 30 is brought into close contact with the upper surface of the lead frame on the side of the opening 16 where the semiconductor element 24 of the lead frame is joined. The sealing film 30 that is brought into close contact with the opening 16 side is a film based on a resin containing polyimide, polycarbonate, or the like as a main component, and can be easily peeled off after resin sealing, and has resistance to high temperature of sealing. Anything will do. In this embodiment, a film containing polyimide as a main component is used and the thickness is 80 [μ
m].

Then, as shown in FIG. 13C, the upper mold and the lower mold are closed together with the sealing film 30, and the lead frame itself is pressed against the mold, so that the molten sealing resin 26 is applied to the lead frame. The resin is sealed by injecting it into the opening 16 from the provided runner portion and gate portion. By this process, after the resin is sealed, the films 15 and 30 are peeled off to perform resin sealing in a state where both surfaces of the lead frame on which the semiconductor element 24 is mounted are sandwiched between the films 15 and 30, and thus the sealing resin 26 parts It is possible to manufacture a resin-sealed semiconductor device in which leads protrude from the external terminal portion 27 and the external terminal portion 27 is formed. Further, at the time of this resin sealing, the sealing film 30 is brought into close contact with the opening 16 side, vacuumed, and resin-sealed while maintaining the state of being uniformly stretched. The occurrence of wrinkles in the sealing film 30 can be prevented, and a semiconductor device having no wrinkles on the surface of the sealing resin 26 can be manufactured.

FIG. 14 is a sectional view showing a resin-sealing die for a resin-sealed semiconductor device. As shown in the figure, the upper die 32a and the lower die 32b are closed together with the surface of the encapsulation film 30 together with the lead frame 31 on which the semiconductor element is mounted, and the upper die 32a and the lower die 32b are pressed to melt and seal. A resin-sealed semiconductor device is manufactured by injecting and sealing a resin.

As shown in FIG. 14, the metal mold for resin molding of the semiconductor device used for mold molding of the present invention is an upper mold 32a.
And a lower die 32b. The lower die 32b is provided with a lead frame 31 on which a semiconductor element is mounted. After the lower die 32b is clamped, the tablet 33 is pushed up by a plunger 34 to While being melted at that temperature, the openings and the like are filled from the runner and the gate arranged on the lead frame 31. The sealing film 30 is arranged on the upper surface of the lead frame 31 by the sealing film supply device 35 and the winding device 36, and is closely attached by the upper die 32a.

In this embodiment, since the connecting members such as the semiconductor element and the fine metal wire are mounted within the thickness of the lead frame 31, both the upper mold 32a and the lower mold 32b have a simple structure without cavity recesses. You can

Further, the role of the sealing film 30 is to arrange it between the lead frame 31 and the mold so that when the gate portion, the opening portion and the airbend portion are filled with the sealing resin, the sealing film 30 acts on the lead frame 31. And has a role as a stopper that prevents the sealing resin that passes through the gate portion and the runner portion from protruding onto the lead frame 31 during resin sealing. That is, the lead frame 3
Gate section, air bend section and sealing film 3 arranged in 1
0 creates a substantial resin inlet. Also,
It also prevents molding defects due to the influence of substrate size variations.

The feature of the present invention is that the lead frame 31 on which the semiconductor element is mounted is aligned and mounted on the lower mold 32b, the sealing film 30 is adhered to the lead frame 31, and the mold is made of a resin film. By clamping and clamping the die with the sealing film 3 and the lead frame 31, and blocking the upper parts of the gate and runner provided on the lead frame 31, the runner and gate are formed and stable resin sealing is possible. There is something I did. Further, the resin mold is softened by the heat and is pressed into the runner portion, the gate portion, and the inside of the opening of the lead frame 31 to form a step, and the sealing film 30 is formed.
Prevents the sealing resin from squeezing out, so that the external terminal portion has a structure protruding from the surface of the sealing resin with respect to the opening, runner portion, and gate portion, and the resin-sealed semiconductor device is completed. Further, the thickness of the sealing film 30 can be used to adjust the level difference between the runner portion, the gate portion, and the opening.

Therefore, since the external terminal portion on the opening side can be used as it is for connection with the mounting substrate, it can be used as a land grid type resin-sealed semiconductor device which does not require solder balls. Further, it becomes possible to produce a thin resin-encapsulated semiconductor device which can be stacked as in the structure shown in FIG.

Finally, the sealing film 30 adhered to the lead frame 31 is removed by peeling off, and the lead frame 31 is cut by a cutting machine to complete the resin-sealed semiconductor device of the above quality. As a result, the reliability of the package, especially the moisture resistance, which is an important issue to be considered, can be guaranteed by strengthening the adhesive force at the interface between the glass / epoxy resin and the molding resin by providing a resin filling part in the opening. Became.

Further, the problems of potting resin encapsulation such as long curing time of resin, poor mass productivity, easy entrapment of air when injecting, and easy occurrence of resin voids are caused by gate part and runner. The problem can be solved by enabling a manufacturing method in which the parts are arranged on the substrate. Further, since the molding pressure is not applied at the time of molding the resin, the resin void can be made small, and the problem that the air in the resin void expands at the time of mounting to cause a crack can be solved.

Further, unlike the conventional case, it is not necessary to form a cavity concave portion in the mold for each semiconductor device, it is not necessary to provide a large number of ejector pins, air bends, etc. in designing the mold, and a parting surface is not provided. However, since the mold structure is extremely simplified, the design and manufacturing of the mold can be facilitated, the manufacturing time can be shortened, and the manufacturing cost of the mold, which is higher for a smaller semiconductor device, can be reduced.

As described above, the mold for resin encapsulation of the semiconductor device used in this embodiment is composed of the upper mold 32a and the lower mold 32b, and the lower mold 32b or the upper mold 32a is provided with a cavity recess. Has not been done.

In the resin encapsulation process, the encapsulation film and the resin film are softened and thermally contracted by the heat of the encapsulation mold, so that the die pad and the lead portion for signal connection bite into the film to enclose the die pad and the encapsulation. Steps are formed between the back surface of the resin and the back surface of the signal connecting lead portion and the back surface of the sealing resin. Therefore, the die pad and the signal connection lead portion have a structure protruding from the back surface of the encapsulating resin, and the standoff height of the die pad and the protruding amount (standoff height) of the external terminal portion, which is the lower portion of the signal connection lead portion, can be reduced. Can be secured. For example,
In this embodiment, since the thickness of the resin film attached to the lead frame is 50 [μm], the protrusion amount is, for example, about 20 [μm], and the thickness of the resin film is 80 [μm] in close contact with the lead frame. For example 40
It can be about [μm].

As a result, a stackable structure can be obtained even if the semiconductor device is slightly warped. The exposed portion of the signal connecting lead portion becomes the external terminal portion.

As described above, by adjusting the thicknesses of the resin film and the sealing film, it is possible to maintain an appropriate amount of protrusion of the external terminal portion and the signal connecting lead portion from the sealing resin. This means that the standoff height of the external terminal portion can be controlled only by setting the thickness of the film, and it is not necessary to separately provide a means or process for controlling the standoff height amount. This is an extremely advantageous point in terms of process control cost. The thickness of this film is 1
It is preferably about 0 to 150 [μm].

For the film to be used, a material having a predetermined hardness, thickness and heat-softening property can be selected according to the desired protrusion amount. However, by adjusting the pressure applied to the film, the standoff height of the die pad or the external terminal portion may be adjusted.
It is also possible to make the standoff height almost "0".

[0074]

As described above, a method of manufacturing a resin-sealed semiconductor device, in which a lead frame to which a semiconductor element is bonded is resin-sealed with a sealing film interposed in a sealing die, The sealing film was placed in close contact with the gate and runners arranged in the lead frame, and the opening was filled with resin, enabling resin sealing with an inexpensive mold. The electrode bottom exposed type resin-encapsulated semiconductor device provided is a small, thin, high-quality resin-encapsulated semiconductor device having excellent moisture resistance.

[Brief description of drawings]

FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a lead frame according to an embodiment of the present invention.

FIG. 3 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 4 is a top perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 5 is a bottom perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 6 is a sectional view showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 7 is a top perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 8 is a top perspective view showing the stack structure of the resin-sealed semiconductor device according to the embodiment of the present invention.

FIG. 9 is a top perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 10 is a top perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 11 is a bottom perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 12 is a sectional view showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 13 is a sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 14 is a sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 15 is a sectional view showing a conventional resin-sealed semiconductor device.

FIG. 16 is a sectional view showing a conventional resin-sealed semiconductor device.

[Explanation of symbols]

1 Semiconductor element 2 adhesive 3 double-sided printed circuit board 4 wiring pattern 5 through holes 6 conductors 7 electrode pad 8 thin metal wires 9 Solder resist 10 Sealing resin 11 solder balls 12 Lead for signal connection 13 Outer lead part 14 frames 15 Resin film 16 openings 17 die pad 18 Gate 19 Runner section 20 Air Bend 21 groove 22 Step 23 Second signal connecting lead portion 24 Semiconductor element 25 metal wires 26 Sealing resin 27 External terminal part 28 Pole part 29 External terminal 30 sealing film 31 lead frame 32a Upper mold 32b Lower mold 33 tablets 34 Plunger 35 feeder 36 Winding device

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Claims (3)

(57) [Claims] 1. A die pad portion, a signal connecting lead portion arranged in a grid shape, a semiconductor element, an adhesive material for adhering the semiconductor element and the die pad portion, an electrode pad of the semiconductor element, and the signal. What is claimed is: 1. A resin-encapsulated semiconductor device comprising a connection member for electrically connecting a connection lead portion and a sealing resin for sealing the semiconductor element and the connection member, wherein the surface of the signal connection lead portion. A resin-sealed semiconductor device having a resin-filled portion having a concave resin surface. 2. A die pad portion, a signal connecting lead portion, a semiconductor element, an adhesive material for adhering the semiconductor element and the die pad portion, an electrode pad of the semiconductor element, and the signal connecting lead portion. What is claimed is: 1. A resin-sealed semiconductor device comprising a connection member for electrically connecting and a sealing resin for sealing the semiconductor element and the connection member, wherein the resin surface is concave from the surface of the signal connection lead portion. A resin-encapsulated semiconductor device having a resin-filled portion. 3. A semiconductor element, a semiconductor element mounting portion or a die pad portion for adhering the semiconductor element, a connecting member for electrically connecting an electrode pad of the semiconductor element and a signal connecting lead portion, and the semiconductor element. A mounting portion or the die pad portion, a method of manufacturing a resin-sealed semiconductor device in which the semiconductor element and the connection member are resin-sealed, a step of preparing a lead frame having the die pad portion and the signal connection lead portion, A step of sealing the upper part of the gate part and the upper part of the runner part of the lead frame by attaching a sealing film to the side of the lead frame on which the semiconductor element is mounted, and sealing the runner part and the gate part of the lead frame. A method of manufacturing a resin-encapsulated semiconductor device, which comprises a step of filling a sealing resin and sealing.